Dry development apparatus and methods for volatilization of dry development byproducts in wafers

Abstract

This document discloses radiation heating systems and methods for dry development processes. In some instances, these systems and methods allow volatile halides that may remain on the wafer surface after dry development to be removed from the wafer through radiation heating. In some instances, these systems and methods can be provided in situ, wherein the heated wafer is radiation heated in the same chamber as where the dry development process is performed. In other cases, such radiation heating can be performed at other locations, for example, when the wafer is moved from a processing chamber to another chamber or is entirely within another chamber.

Description

[Technical Field]

[0001] This invention relates to a dry developing apparatus and method for the volatilization of dry developing byproducts in wafers. [Previous Technology]

[0002] The fabrication of semiconductor devices (e.g., integrated circuits) involves a multi-step process involving photolithography. Generally, this process includes depositing material on a wafer and patterning the material using photolithography techniques to form structural features (e.g., transistors and circuits) of the semiconductor device. Typical photolithography steps known in the art include: preparing a substrate; applying photoresist, for example by spin coating; exposing the photoresist to a desired pattern, such that the exposed areas of the photoresist become more soluble or less soluble in a developing solution; developing the photoresist by removing the exposed or unexposed areas using a developing solution; and subsequent processing to establish features on the photoresist-removed substrate area, for example by etching or material deposition.

[0003] Advances in semiconductor design have created and are driven by the need to form smaller features on semiconductor substrate materials. This technological progress is characterized by Moore's Law, which states that the transistor density in densely integrated circuits doubles every two years. More precisely, advancements in chip design and manufacturing have enabled modern microprocessors to contain billions of transistors and other circuit features on a single chip. These individual features on such chips may be approximately 22 nanometers (nm) or smaller, and in some cases less than 10 nm.

[0004] One challenge in manufacturing devices with such small features is the ability to reliably and repeatedly form photolithography masks with sufficient resolution. Currently, photolithography processes typically use 193 nm ultraviolet (UV) light to expose the photoresist. The fact that the wavelength of the light is significantly larger than the desired size of the feature to be produced on the semiconductor substrate poses an inherent problem. Achieving feature sizes smaller than the light wavelength requires complex resolution enhancement techniques, such as multiple patterning. Therefore, there is significant interest and research progress in developing photolithography techniques using shorter wavelength light (e.g., extreme ultraviolet radiation (EUV)) with wavelengths of 10 nm to 15 nm (e.g., 13.5 nm).

[0005] However, EUV photolithography may present challenges, including low power output and light loss during patterning. Conventional organic chemical amplifying resists (CARs) used in 193 nm UV lithography have potential drawbacks when used in EUV lithography, particularly because they have low absorption coefficients in the EUV region and the diffusion of photoactivated chemicals can lead to pattern blurring or line edge roughness. Furthermore, to provide the etch resistance required for patterning the underlying device layer, it may be necessary to use thicker CARs, resulting in high aspect ratios for small features patterned in conventional CAR materials, which carries the risk of pattern collapse. Therefore, improved EUV photoresist materials with properties such as reduced thickness, higher absorbance, and greater etch resistance are still needed.

[0006] The background description provided herein is for the purpose of outlining the technical context. The inventors’ work (within the scope described in the prior art paragraphs) and descriptions that may not have been otherwise considered prior art at the time of application are not expressly or impliedly acknowledged as prior art to this technology. [Summary of the Invention]

[0007] Details of one or more embodiments of the subject matter described in this specification are set forth in the accompanying drawings and the following description. Other features, features, and advantages will become apparent from the description, drawings, and claims.

[0008] In some embodiments, an apparatus may be provided including a processing chamber; a base located within the processing chamber and having a wafer support surface configured to support the wafer during dry development processing within the processing chamber; a base cooling system configured to cool at least the wafer support surface of the base; one or more light sources configured to direct light into the processing chamber and at a location on or above the base; and a gas distribution system having one or more inlets and a plurality of outlets configured to direct gas flowing through it from the outlets into a region above the wafer support surface of the base.

[0009] In some embodiments of the device, at least one of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0010] In some embodiments of the device, at least one of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0011] In some embodiments of the device, at least one of the one or more light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0012] In some embodiments of the device, there may be a plurality of light sources, and at least most of such light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0013] In some embodiments of the device, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0014] In some embodiments of the device, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0015] In some embodiments of the device, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0016] In some embodiments of the device, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0017] In some embodiments of the device, each of the one or more light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0018] In some embodiments of the device, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0019] In some embodiments of the device, at least one of the one or more light sources may be an infrared incandescent lamp, an infrared light-emitting diode, or a blue light-emitting diode.

[0020] In some embodiments of the device, the one or more light sources may include a plurality of light-emitting diodes (LEDs) distributed throughout the circular or annular region.

[0021] In some embodiments of the device, the device may further include one or more windows, each window being located between one or more of the light sources and the wafer support surface. In at least these embodiments, each of the one or more windows may have a region that is transparent to light having at least one or more wavelengths within a range or a plurality of ranges of 400 nm to 490 nm, 800 nm to 1300 nm, or 400 nm to 490 nm and 800 nm to 1300 nm.

[0022] In some embodiments of the device, the one or more windows may include alumina or silicon oxide.

[0023] In some embodiments of the device, the gas distribution system may include a spray head that extends above and may be perpendicularly offset from the wafer support surface, and at least some outlets may be distributed on a first portion of the panel of the spray head and extend through the first portion of the panel of the spray head, the panel having a first surface facing the wafer support surface.

[0024] In some embodiments of the device, the one or more light sources may include a plurality of light-emitting diodes (LEDs), and the LEDs of the plurality of LEDs may be distributed on a second portion of the panel.

[0025] In some embodiments of the device, the LEDs of the plurality of LEDs may be distributed between the outlets and located within a second portion of the panel.

[0026] In some embodiments of the device, the first part and the second part may both be circular, annular or radially symmetrical and may be centered on each other.

[0027] In some embodiments of the device, the spray head may be located between the wafer support surface and at least some of the one or more light sources, and the spray head may have a region that is at least partially transparent to light having a wavelength or a plurality of wavelengths in a range or a plurality of ranges of 400 nm to 490 nm, 800 nm to 1300 nm, or 400 nm to 490 nm and 800 nm to 1300 nm.

[0028] In some embodiments of the device, the spray head may include a panel on which outlets are distributed, and at least the panel of the spray head may be made of a material including silicon oxide or aluminum oxide.

[0029] In some embodiments of the device, the device may further include one or more windows (or already has one or more such windows), each window being located between one or more of the light sources and the wafer support surface. In these embodiments, the one or more windows may close corresponding one or more holes in the processing chamber, and the one or more light sources may be located outside the processing chamber and may be configured to emit light through the one or more windows into the processing chamber.

[0030] In some embodiments of the device, the device may further include one or more windows (or already has one or more such windows), each window being located between one or more of the light sources and the wafer support surface. In these embodiments, the one or more light sources may be light-emitting diodes located within a processing chamber, and at least some of the one or more windows may also be located within a processing chamber.

[0031] In some embodiments of the apparatus, the apparatus may further include a controller configured to: a) determine that a wafer in the processing chamber is ready for a dry development process; b) cause a pedestal cooling system to cool the wafer to a temperature within a first temperature range, and the wafer is supported by a wafer support surface; c) cause a gas distribution system to flow a first set of one or more processing gases through the plurality of outlets and through the wafer, and the temperature of the wafer is within the first temperature range to perform a dry development process; and d) after (c), cause the one or more light sources to irradiate the wafer to heat the wafer to a temperature within a second temperature range, where the lower limit is higher than the upper limit of the first temperature range.

[0032] In some embodiments of the device, the device may further include a pyrometer configured to obtain temperature measurements of the wafer over a period of at least (d), and the controller may be further configured to: monitor the temperature of the wafer using the pyrometer, and adjust the intensity level of one or more light sources based on the temperature of the wafer to keep the temperature of the wafer below 200°C.

[0033] In some embodiments of the device, the controller may be further configured to: (e) allow inert gas to flow through the gas distribution system and its outlet after (c), and perform (d) after or during (e).

[0034] In some embodiments of the device, the inert gas may include argon, nitrogen, xenon, helium, krypton, or any combination of two or more thereof.

[0035] In some embodiments of the apparatus, the apparatus may further include a discharge system connected to the processing chamber, and the controller may be further configured to: discharge gas from the processing chamber through the discharge system during at least a portion of (e), and perform (d) after the residual molar density of the first group of one or more process gases in the processing chamber has decreased to 10% or less of the molar density of the first group of one or more process gases in the processing chamber during the steady-state airflow that occurs during (c).

[0036] In some embodiments of the device, the controller may be configured to irradiate the wafer with one or more light sources before (b) to heat the wafer to a temperature within a third temperature range.

[0037] In some embodiments of the device, the device may further include a lifting pin mechanism having a plurality of lifting pins. In these embodiments, the lifting pin mechanism may be configured such that the lifting pins are controllably movable relative to the base between a first position and a second position, each lifting pin not extending upward beyond the wafer support surface in the first position, each lifting pin extending upward beyond the wafer support surface in the second position, and the controller may be configured to place the lifting pins of the lifting pin mechanism in the first position during at least a portion of both (b) and (c).

[0038] In some embodiments of the device, the controller may be configured to place the lifting pin of the lifting pin mechanism in a second position during at least a portion of (d).

[0039] In some embodiments of the device, the controller may be configured to irradiate the wafer with one or more light sources before (b) to heat the wafer to a temperature within a third temperature range, and to place the lifting pin of the lifting pin mechanism in a second position during at least a portion of the irradiation of the wafer before (b).

[0040] In some embodiments of the device, the controller may be configured to receive instructions to perform a chamber cleaning operation; place a cleaning wafer in a first chamber, wherein the cleaning wafer has a reflective, high-diffusivity coating on its surface; irradiate the surface of the cleaning wafer with the reflective, high-diffusivity coating with one or more light sources for a first time period; and remove the cleaning wafer from the first chamber after the first time period.

[0041] In some embodiments of the device, the reflective, high-diffusivity coating may be made of tin, tellurium or hafnium.

[0042] In some embodiments of the device, the surface having the reflective, high-diffusivity coating may have a surface roughness equal to one or two wavelengths of light from one or more light sources irradiating the wafer.

[0043] In some embodiments of the apparatus, the apparatus may further include a cleaned wafer.

[0044] In some embodiments, an apparatus may be provided comprising: a first chamber; a second chamber; a channel configured to connect the first chamber and the second chamber, the channel being sized to allow a wafer to move through it along a first path between the first chamber and the second chamber; a base located within the first chamber and having a wafer support surface configured to support the wafer during dry development processing within the first chamber; a base cooling system configured to cool at least the wafer support surface of the base; a gas distribution system having one or more inlets and a plurality of outlets configured to direct gas flowing therethrough from the outlets into a region above the wafer support surface of the base; and one or more light sources disposed in at least one of: within the first chamber and adjacent to the channel, within the channel, or within the second chamber, wherein the one or more light sources may be configured to direct light to a location through which the wafer will pass as it moves from the first chamber and through the second chamber.

[0045] In some embodiments of the device, the channel may include a valve mechanism configured to close the channel in a first configuration, and the one or more light sources may be close to the side of the valve mechanism closest to the base.

[0046] In some embodiments of the device, the channel may include a valve mechanism configured to close the channel in a first configuration, and the one or more light sources may be located near the side of the valve mechanism furthest from the base.

[0047] In some embodiments of the device, the channel may include a valve mechanism configured to close the channel in a first configuration, the one or more light sources may be a plurality of light sources, and the one or more light sources may include a first group of one or more light sources and a second group of one or more light sources, the first group of light sources may be configured such that the valve mechanism may be located between the first group of light sources and the base, and the second group of light sources may be configured to be horizontally located between the valve mechanism and the base.

[0048] In some embodiments of the device, the one or more light sources may be configured to generate at least an elongated illumination region when powered, the illumination region having at least a width D in a direction perpendicular to the first path and located on a reference plane (where D is the diameter of the wafer).

[0049] In some embodiments of the device, the second chamber may be a vacuum transfer module having one or more wafer handling robots.

[0050] In some embodiments of the apparatus, the apparatus may further include a controller configured to: a) determine that a wafer in a first chamber is ready for a dry development process; b) cause a pedestal cooling system to cool the wafer to a temperature within a first temperature range, with the wafer supported by a wafer support surface; c) cause a gas distribution system to flow a first set of one or more processing gases through a plurality of outlets and through the wafer, with the wafer temperature within the first temperature range to perform the dry development process; d) remove the wafer from the wafer support surface, exit the first chamber, pass through a channel, and pass through a second chamber; and e) cause the one or more light sources to irradiate the wafer after it has been removed from the wafer support surface and while the wafer is being moved out of the first chamber, to heat the wafer to a temperature within a second temperature range, with the lower limit above the upper limit of the first temperature range.

[0051] In some embodiments of the device, the device may further include a discharge system configured to discharge gas from the first chamber when power is supplied, and the controller may be configured to activate the discharge system to maintain the pressure in the first chamber below the pressure in the second chamber for at least a portion of (d) and (e).

[0052] In some embodiments of the device, the controller may be configured to irradiate the wafer with one or more light sources when the wafer is moved from the second chamber to the first chamber before (a) to heat the wafer to a temperature in a third temperature range with a lower limit higher than the upper limit of the first temperature range.

[0053] In some embodiments of the device, the device may further include a discharge system configured to discharge gas from the first chamber (if not already included) when power is supplied. The controller may be configured to: f) irradiate the wafer with one or more light sources when the wafer is moved from the second chamber into the first chamber before (a) to heat the wafer to a temperature in a third temperature range with a lower limit higher than the upper limit of the first temperature range, and g) activate the discharge system during at least a portion of (f) to maintain the pressure in the first chamber lower than the pressure in the second chamber.

[0054] In some embodiments of the device, the second chamber may have an internal volume that is larger than the cylindrical reference volume of diameter D (where D is the diameter of the wafer), and the one or more light sources may be arranged to illuminate a circular area of ​​diameter D in the second chamber and in the first reference plane.

[0055] In some embodiments of the device, the device may further include a transfer module, which includes one or more wafer handling robots, and a second chamber may be located between the first chamber and the transfer module.

[0056] In some embodiments of the apparatus, the apparatus may further include a controller configured to: a) determine that a wafer in a first chamber is ready for a dry development process; b) cause a pedestal cooling system to cool the wafer to a temperature within a first temperature range, with the wafer supported by a wafer support surface; c) cause a gas distribution system to flow a first set of one or more processing gases through the plurality of outlets and through the wafer, with the wafer temperature within the first temperature range to perform the dry development process; d) remove the wafer from the wafer support surface, exit the first chamber, pass through a channel, and enter a second chamber; and e) cause one or more light sources to irradiate the wafer after it has been moved from the first chamber to the second chamber to heat the wafer to a temperature within a second temperature range, with the lower limit above the upper limit of the first temperature range.

[0057] In some embodiments of the device, the controller may be configured to irradiate the wafer with one or more light sources before the wafer is moved into the first chamber and while it is in the second chamber before (a) to heat the wafer to a temperature in a third temperature range with a lower limit higher than the upper limit of the first temperature range.

[0058] In some embodiments of the device, at least one of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0059] In some embodiments of the device, at least one of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0060] In some embodiments of the device, at least one of the one or more light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0061] In some embodiments of the device, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0062] In some embodiments of the device, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0063] In some embodiments of the device, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0064] In some embodiments of the device, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0065] In some embodiments of the device, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0066] In some embodiments of the device, each of the one or more light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0067] In some embodiments of the device, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0068] In some embodiments of the device, at least one of the one or more light sources may be an infrared incandescent lamp, an infrared light-emitting diode, or a blue light-emitting diode.

[0069] In some embodiments, a method may be provided comprising: a) placing a wafer on a wafer support surface of a base in a processing chamber; b) cooling the wafer to a temperature within a first temperature range, wherein the wafer is supported by the wafer support surface; c) flowing a first set of one or more processing gases through a plurality of outlets of a gas distribution system and through the wafer, wherein the temperature of the wafer is within the first temperature range to perform a dry development process; and d) irradiating the wafer after (c) and within the processing chamber with one or more light sources to heat the wafer to a temperature within a second temperature range, wherein the lower limit is above the upper limit of the first temperature range.

[0070] In some embodiments of the method, at least one of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0071] In some embodiments of the method, at least one of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0072] In some embodiments of the method, at least one of the one or more light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0073] In some embodiments of the method, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0074] In some embodiments of the method, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0075] In some embodiments of the method, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0076] In some embodiments of the method, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0077] In some embodiments of the method, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0078] In some embodiments of the method, each of the one or more light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0079] In some embodiments of the method, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0080] In some embodiments of the method, at least one of the one or more light sources may be an infrared incandescent lamp, an infrared light-emitting diode, or a blue light-emitting diode.

[0081] In some embodiments of the method, the one or more light sources may include a plurality of light-emitting diodes (LEDs) distributed throughout the circular or annular region.

[0082] In some embodiments of the method, the method may further include guiding light from the one or more light sources through one or more windows, each window being located between one of the one or more light sources and a wafer support surface, wherein each of the one or more windows has a region that is transparent to light having at least one or more wavelengths in the range of 400 nm to 490 nm, 800 nm to 1300 nm, or 400 nm to 490 nm and 800 nm to 1300 nm.

[0083] In some embodiments of the method, the one or more windows may be made of a material including alumina or silicon oxide.

[0084] In some embodiments of the method, the gas distribution system may include a spray head that extends above and may be perpendicularly offset from the wafer support surface, and at least some outlets may be distributed on a first portion of the panel of the spray head and extend through the first portion of the panel of the spray head, the panel having a first surface facing the wafer support surface.

[0085] In some embodiments of the method, the one or more light sources may include a plurality of light-emitting diodes (LEDs), and the LEDs of the plurality of LEDs may be distributed on a second portion of the panel.

[0086] In some embodiments of the method, the LEDs in the plurality of LEDs may be distributed between the outlets and located within a second portion of the panel.

[0087] In some embodiments of the method, the first part and the second part may both be circular, annular or radially symmetrical and may be centered on each other.

[0088] In some embodiments of the method, the spray head may be located between the wafer support surface and at least some of the one or more light sources, and the spray head may have a region that is at least partially transparent to light having a wavelength or a plurality of wavelengths in the range of 400 nm to 490 nm, 800 nm to 1300 nm, or between 400 nm to 490 nm and between 800 nm to 1300 nm.

[0089] In some embodiments of the method, the spray head may include a panel having outlets distributed thereon, and at least the panel of the spray head may be made of a material including silicon oxide or aluminum oxide.

[0090] In some embodiments of the method, the method may further include (if not already included) emitting light from the one or more light sources through one or more windows, each window being located between one or more of the light sources and a wafer support surface. In these embodiments, the one or more windows may close corresponding one or more apertures of the processing chamber, and the one or more light sources may be located outside the processing chamber and may be configured to emit light through the one or more windows into the processing chamber.

[0091] In some embodiments of the method, the method may further include (if not already included) emitting light from the one or more light sources through one or more windows, each window being located between one of the one or more light sources and a wafer support surface. In these embodiments, the one or more light sources may be light-emitting diodes located within a processing chamber, and at least some of the one or more windows may also be located within a processing chamber.

[0092] In some embodiments of the method, the method may further include using a pyrometer to monitor the temperature of the wafer, and adjusting the intensity level of the one or more light sources based on the temperature of the wafer to keep the temperature of the wafer below 200°C.

[0093] In some embodiments of the method, the method may further include (e) flowing an inert gas through a gas distribution system and its outlet after (c), and performing (d) after or during (e).

[0094] In some embodiments of the method, the inert gas may include argon, nitrogen, xenon, helium, krypton, or any combination of two or more thereof.

[0095] In some embodiments of the method, the method may further include discharging gas from the processing chamber by the discharge system during at least a portion of (e), and performing (d) after the residual molar density of the first group of one or more process gases in the processing chamber is reduced to 10% or less of the molar density of the first group of one or more process gases in the processing chamber during the steady-state gas flow that occurs during (c).

[0096] In some embodiments of the method, the method may further include irradiating the wafer prior to (b) to heat the wafer to a temperature within a third temperature range.

[0097] In some embodiments of the method, the method may further include placing the lifting pins of the lifting pin mechanism in a first position during at least a portion of both (b) and (c), wherein the lifting pins are controllably movable relative to the base between the first position and a second position. In these embodiments, each lifting pin may not extend upward beyond the wafer support surface in the first position, and each lifting pin may extend upward beyond the wafer support surface in the second position.

[0098] In some embodiments of the method, the method may further include placing the lifting pin of the lifting pin mechanism in a second position during at least a portion of (d).

[0099] In some embodiments of the method, the method may further include irradiating the wafer with one or more light sources before (b) to heat the wafer to a temperature within a third temperature range, and placing the lifting pin of the lifting pin mechanism in a second position during at least a portion of the irradiation of the wafer before (b).

[0100] In some embodiments of the method, the method may further include receiving instructions to perform a chamber cleaning operation; placing a cleaning wafer in a first chamber, wherein the cleaning wafer has a reflective, high-diffusivity coating; illuminating the cleaning wafer with one or more light sources for a first time period; and removing the cleaning wafer from the first chamber after the first time period.

[0101] In some embodiments of the method, the reflective, high-diffusivity coating may be made of tin, tellurium or hafnium.

[0102] In some embodiments of the method, the surface having a reflective, high-diffusivity coating may have a surface roughness equal to one or two wavelengths of light from one or more light sources used to irradiate the wafer.

[0103] In some embodiments, a method may be provided comprising: a) placing a wafer on a wafer support surface of a base in a processing chamber; b) cooling the wafer to a temperature within a first temperature range, wherein the wafer is supported by the wafer support surface; c) flowing a first set of one or more processing gases through a plurality of outlets of a gas distribution system and through the wafer, wherein the temperature of the wafer is within the first temperature range to perform a dry development process; d) moving the wafer from a first chamber to a second chamber through a channel, the second chamber being connected to the first chamber through the channel; and e) irradiating the wafer with one or more light sources after (c) and while the wafer is passing through the channel or in the second chamber to heat the wafer to a temperature within a second temperature range, wherein the lower limit is above the upper limit of the first temperature range.

[0104] In some embodiments of the method, the channel may include a valve mechanism configured to close the channel in a first configuration, and the one or more light sources may be close to the side of the valve mechanism closest to the base.

[0105] In some embodiments of the method, the channel may include a valve mechanism configured to close the channel in a first configuration, and the one or more light sources may be close to the side of the valve mechanism furthest from the base.

[0106] In some embodiments of the method, the channel may include a valve mechanism configured to close the channel in a first configuration, the one or more light sources may be a plurality of light sources, and the one or more light sources may include a first group of one or more light sources and a second group of one or more light sources, the first group of light sources may be configured such that the valve mechanism may be located between the first group of light sources and the base, and the second group of light sources may be configured to be horizontally located between the valve mechanism and the base.

[0107] In some embodiments of the method, the one or more light sources may be configured to generate at least an elongated irradiation region when powered, the irradiation region having at least a width D in a direction perpendicular to the first path and located on a reference plane (where D is the diameter of the wafer).

[0108] In some embodiments of the method, the second chamber may be a vacuum transfer module having one or more wafer handling robots.

[0109] In some embodiments of the method, the method may further include activating the discharge system to maintain the pressure in the first chamber lower than the pressure in the second chamber during at least a portion of (d) and (e).

[0110] In some embodiments of the method, the method may further include irradiating the wafer with one or more light sources while the wafer is being moved from the second chamber to the first chamber before (a) to heat the wafer to a temperature in a third temperature range with a lower limit higher than the upper limit of the first temperature range.

[0111] In some embodiments of the method, the method may further include f) irradiating the wafer with one or more light sources when the wafer is moved from the second chamber into the first chamber before (a) to heat the wafer to a temperature in a third temperature range with a lower limit higher than the upper limit of the first temperature range, and g) activating a discharge system or the discharge system during at least a portion of (f) to maintain the pressure in the first chamber lower than the pressure in the second chamber.

[0112] In some embodiments of the method, the second chamber may have an internal volume that is larger than the cylindrical reference volume of diameter D (where D is the diameter of the wafer), and the one or more light sources may be arranged in the second chamber to illuminate a circular area of ​​diameter D in the first reference plane.

[0113] In some embodiments of the method, the method may further include a transfer module comprising one or more wafer handling robots, and a second chamber may be located between the first chamber and the transfer module.

[0114] In some embodiments of the method, the method may further include irradiating the wafer with one or more light sources before the wafer is moved into the first chamber and while it is in the second chamber before (a) to heat the wafer to a temperature in a third temperature range with a lower limit higher than the upper limit of the first temperature range.

[0115] In some embodiments of the method, at least one of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0116] In some embodiments of the method, at least one of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0117] In some embodiments of the method, at least one of the one or more light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0118] In some embodiments of the method, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0119] In some embodiments of the method, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0120] In some embodiments of the method, there may be a plurality of light sources, and at least most of the light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0121] In some embodiments of the method, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0122] In some embodiments of the method, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0123] In some embodiments of the method, each of the one or more light sources may be configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0124] In some embodiments of the method, each of the one or more light sources may be configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0125] In some embodiments of the method, at least one of the one or more light sources may be an infrared incandescent lamp, an infrared light-emitting diode, or a blue light-emitting diode.

[0126] In addition to the embodiments listed above, other embodiments that are obvious from the following discussion and figures shall also be understood to fall within the scope of the present invention.

Implementation Method

[0145] This invention generally relates to the field of semiconductor processing. In a particular embodiment, the invention is directed to processes and apparatus for developing photoresists (e.g., EUV-sensitive metal-containing and / or metal oxide-containing photoresists) using halide chemicals to form patterned masks, for example, against an EUV patterned background. Such photoresists can be provided, for example, using dry or wet deposition or coating techniques. Thus, dry development techniques can be used for suitable photoresists applied by dry deposition or, for example, by wet processes (such as spin coating).

[0146] Detailed reference is made herein to specific embodiments of the invention. Examples of specific embodiments are shown in the accompanying drawings. Although the invention will be described in conjunction with these specific embodiments, it will be understood that it is not intended to limit the invention to these specific embodiments. Rather, it is intended to cover substitutions, modifications, and equivalents that may be included within the spirit and scope of the invention. In the following description, numerous specific details are set forth to provide a thorough understanding of the invention. The invention may be practiced without some or all of these specific details. In other instances, well-known process operations are not described in detail so as not to unnecessarily obscure the invention. Introduction

[0147] Thin film patterning in semiconductor processing is often an important step in semiconductor manufacturing. Patterning involves lithography. In 193 nm photolithography, a pattern is formed by emitting photons from a photon source through a mask, thus exposing an area on a photoresist in the shape and outline of the pattern. This induces a chemical reaction in the photoresist, which, after development, allows certain portions of the photoresist to be removed, thus forming the pattern.

[0148] Advanced technology nodes (as defined in the International Semiconductor Technology Roadmap) include nodes of 22 nm, 16 nm, or beyond. For example, in the 16 nm node, the width of a typical via or line in a damascene structure is typically no greater than about 30 nm. The miniaturization of features on advanced semiconductor integrated circuits (ICs) and other devices is driving lithography to improve resolution.

[0149] Extreme ultraviolet (EUV) lithography extends lithography techniques by moving to smaller imaging source wavelengths than those achievable with non-EUV lithography methods. EUV sources with wavelengths of approximately 10-20 nm or 11-14 nm (e.g., 13.5 nm) can be used in leading-edge lithography tools, also known as scanners. EUV radiation is strongly absorbed in a wide range of solid and fluid materials, including quartz and water vapor, and therefore can be operated in a vacuum.

[0150] EUV lithography utilizes EUV resists, which are patterned to form a mask for etching the underlying layer. The EUV resist is a polymer-based chemically amplified resist (CAR) produced via a liquid-based spin coating technique. An alternative to CAR is a directly photo-patternable metal oxide film, for example, available from Inpria (Corvallis, Oregon) and described, for example, in U.S. Patent Publications Nos. US 2017 / 0102612, US 2016 / 021660, and US 2016 / 0116839, which, by reference and in this document, at least disclose photo-patternable metal oxide films. Such films can be produced by spin coating or dry vapor deposition. Metal oxide films can be directly patterned in a vacuum environment via EUV exposure (i.e., without the use of separate photoresist), providing a patterning resolution of less than 30 nm. This is described, for example, in U.S. Patent No. 9,996,004, published June 12, 2018, entitled "EUV PHOTOPATTERNING OF VAPOR-DEPOSITED METAL OXIDE-CONTAINING HARDMASKS," and / or in International Application No. PCT / US19 / 31618, filed May 9, 2019, entitled "METHODS FOR MAKING EUV PATTERNABLE HARD MASKS," the disclosures of which (at least regarding the composition, deposition, and patterning of directly photopatternable metal oxide films to form EUV resist masks) are incorporated herein by reference. Generally, patterning involves exposing an EUV resist to EUV radiation to form a light pattern in the resist, followed by development according to the light pattern to remove a portion of the resist to form a mask.

[0151] It should also be understood that although this invention relates to lithography patterning techniques and materials, exemplified by EUV lithography, it can also be applied to other next-generation lithography technologies. Besides EUV, including the standard 13.5 nm EUV wavelength currently in use and under development, the radiation sources most relevant to such lithography are DUV (deep UV), which generally refers to excimer laser sources using 248 nm or 193 nm, X-rays (which in form include EUV at lower energy ranges within the X-ray range), and electron beams (which can cover a wider energy range). Specific methods may depend on the specific materials and applications used in the semiconductor substrate and the final semiconductor device. Therefore, the methods described in this application are merely examples of methods and materials that can be used in this technology.

[0152] Directly photomable patternable EUV resists may be composed of or contain metals and / or metal oxides. Metals / metal oxides are promising because they can enhance EUV photon absorption and generate secondary electrons and / or exhibit greater etch selectivity relative to the underlying film stack and device layer. To date, these resists have been developed using wet (solvent) methods, which require immersing the wafer in a developing solvent followed by drying and baking. Wet development not only limits productivity but also causes line collapse due to surface tension effects and / or delamination.

[0153] Dry development technology has been proposed to overcome these problems by eliminating substrate delamination and interface cracking. Dry development can improve performance (e.g., prevent line collapse caused by surface tension and delamination that occurs in wet development) and increase throughput (e.g., by avoiding the need to move wafers through wet developers). Other advantages may include eliminating the use of organic solvent developers, reducing sensitivity to adhesion problems, increasing EUV absorption to improve dosing efficiency, and removing solubility-based limitations. Dry development also provides greater adjustability and further critical size (CD) control and a better residue-free defect window.

[0154] Dry development has its own challenges, including managing the byproducts generated during the dry development process. This invention aims to improve the dry development process and processing equipment. EUV inhibitor development.

[0155] According to various embodiments of the present invention, photopatterning of metal-containing photoresist is achieved by exposure to a halide-containing chemical substance. An EUV-sensitive metal-containing or metal oxide film (e.g., organotin oxide) is disposed on a semiconductor substrate. Various possible metal-containing photoresists may include, for example, photoresists containing tin, tellurium, or hafnium with organic ligands (alkyl groups having 1 to 12 carbon atoms therein) attached thereto. The EUV-sensitive metal-containing or metal oxide film is directly patterned by EUV exposure in a vacuum environment. The pattern is then developed using a developing chemical substance to form a resist mask. In some embodiments, the developing chemical substance is a dry developing chemical substance. In some embodiments, the dry developing chemical substance may include hydrogen chloride (HCl), hydrogen bromide (HBr), or an organohalide (or a mixture of both or more thereof), typically mixed with an inert carrier gas, such as argon (Ar), helium (He), krypton (Kr), xenon (Xe), or nitrogen (N2) (or a mixture of both or more thereof), and in some instances, less than 5% oxygen and / or hydrogen. These dry developing chemicals (e.g., gases containing halogens, as listed above for example) can flow across or over a wafer with a latent image (photopatterned with metallic photoresist) and hold the wafer at a temperature ranging from -40°C to 40°C after the wafer has been exposed to EUV patterning operations. These dry developing techniques can be performed in chamber pressure environments ranging from approximately 5 mTorr to 600 mTorr, using mild plasma or thermal processes, and incorporating dry developing chemicals, such as hydrogen and halide dry developing chemicals.

[0156] Once the metallic photoresist has been exposed to the desired micro-pattern, for example in an EUV scanner or similar patterning apparatus, the exposed wafer can be moved to a dry developing chamber to perform a dry developing process to remove its exposed areas (referred to as the latent image produced by the scanner) or unexposed areas. In some embodiments, the exposed wafer may undergo post-exposure baking (PEB)—a heat treatment that can cause broken metallic bonds (e.g., tin bonds in alkoxy-based tin resists) to transform into metal-oxygen (e.g., tin-oxygen) bonds to form a material with a stoichiometry close to that of a metal oxide (e.g., tin oxide) in the exposed areas. Unexposed areas during such PEB can retain alkyl ligands in one of the exposed valences of the metal, such as one of the four valences of tin. PEB can be performed after the wafer has been exposed but before the dry developing process. Typical PEB may include, for example, PEB in which the wafer is heated to one or more temperatures between 130°C and 250°C for a period of time between 30 seconds and 240 seconds. In some instances, the PEB process may include performing multiple PEBs, such as an initial PEB as described above, followed by a second PEB, wherein the wafer may be heated in a controlled ambient environment to a temperature or multiple temperatures between 200°C and 300°C for a period of time between 30 seconds and 240 seconds.

[0157] During dry development, one or more dry developing gases may flow over the exposed surface of the wafer. The dry developing gases may be selected to selectively attack / etch exposed or unexposed areas of the wafer. For example, halide-containing chemicals (e.g., hydrogen bromide) may be used to selectively remove unexposed areas of photoresist (e.g., organotin resist), as described above. These halide-containing chemicals may attack alkyl groups still attached to metals in the unexposed areas, such as alkyl groups still attached to tin. Conversely, alkyl groups that may already be present in exposed areas may have been removed from those exposed areas during the exposure process, so the halide-containing chemicals typically do not attack (or attack minimally) the exposed areas. For example, in tin-based alkoxy resists, the developing chemicals may cause alkyl tin that might remain in the unexposed areas to be etched away, while tin oxide that might remain (e.g., through PEB) may generally remain intact.

[0158] During dry development processes, heavier Group 14 elements (such as silicon, germanium, and tin) may form volatile halides. However, the volatility of these halides decreases with increasing atomic weight of the Group 14 elements, causing them to remain within the etched features of the wafer. For example, if the developing chemical used is hydrogen bromide and the photoresist is a tin-based alkoxy resist, alkyltin bromide molecules may remain trapped in the etched features after the dry development process is complete. If these halides are allowed to remain, gases may be released during subsequent stages of wafer handling and processing, potentially contaminating equipment such as FOUPs (front-opening wafer cassettes) used to transport wafers between semiconductor processing tools. FOUP contamination may, for example, cause other wafers housed within the FOUP to become contaminated, thus further spreading the contamination.

[0159] The problem of volatile halides remaining on the wafer after dry development may be exacerbated by the relatively unique thermal environment used to perform some dry development processes. For example, the processing chamber for dry development may be designed to maintain the wafer at a temperature close to zero degrees Celsius, such as -10°C, during the dry development process, while the chamber itself (and most of the equipment within the chamber) is maintained at a higher temperature, such as 100°C. These low temperatures may cause thermodynamics that cause low-volatility halides to remain on the wafer or to adsorb onto the wafer. For example, the thermal gradient between the high-temperature walls and the lower-temperature wafer may cause volatile materials (such as low-volatility halides) that may be present in the processing chamber to migrate toward the wafer and then adsorb onto it.

[0160] The inventors have determined that it is feasible to perform dry development post-baking (PDDB) on the wafer after performing a dry development process to remove any volatile halides that may remain on the wafer. For example, such PDDB can be performed by heating the wafer to an elevated temperature, such as ~180°C, which may be sufficient to remove most or all of the remaining volatile halides from the wafer.

[0161] Heating the wafer to perform PDDB can be problematic for various reasons because of the large temperature difference between the required PDDB wafer temperature (e.g., ~180°C or greater, but 160°C or greater is also feasible) and the wafer temperature during dry development (e.g., ~-10°C). For example, if PDDB is performed in the same chamber as the dry development process, this allows volatile halides that may be expelled from the wafer during the PDDB process to be removed using the same system (for removing similar volatile halides that may actually be released from the wafer during dry development). However, heating the wafer in the dry development chamber using a conductive heating mechanism (e.g., using an embedded heater located in the base to conduct heat the wafer) can be difficult to perform effectively due to the large temperature difference involved. For example, if embedded heaters within the substrate are used to heat the wafer support surface and, through conduction, the wafer supported therein, may be heated by a large portion of the heat provided by these heaters, which could be used to heat the substrate (instead of heating the wafer) which may have a much larger thermal mass than the wafer. Therefore, it could take a significant amount of time (and power) to bring the wafer to the temperature required for PDDB (Dual Processing Deposition). Similarly, it could then take a significant amount of time to return the substrate to a low temperature that would allow the wafer to be held at the dry development process temperature (e.g., -10°C). The time the substrate is heating or cooling the wafer in preparation for dry development of subsequent wafers can increase the total time the dry development chamber cannot be used to process another wafer, thus reducing wafer yield for such dry development tools.

[0162] An alternative is to perform PDDB in a separate chamber from the process chamber, for example, by moving the wafer to a separate chamber that provides a heated substrate after the dry development process. This allows the substrate in the dry development process chamber to remain largely stable, for example, at a temperature that allows the wafer placed on it to reach about -10°C, while the substrate in the separate chamber can be maintained at a much hotter temperature, for example, 180°C to 250°C, so that the wafer placed on it can be rapidly heated to the required PDDB temperature. Although such an arrangement avoids occupying the dry development chamber while waiting for substrate heating / cooling and during PDDB, such an arrangement may require the use of additional chambers, thus incurring additional costs, and may still result in yield losses because additional time must be spent moving the wafer from the dry development chamber to (via a transfer module) the separate chamber where PDDB will be performed. In some instances, there may be an increased risk of back-side contamination, such as tin contamination, when wafers are transported from the dry developing chamber to the PDDB chamber. However, such implementations may still be advantageous because they allow the dry developing chamber to be used entirely for dry developing, thus increasing its potential yield.

[0163] Another alternative to PDDB is plasma flashing after dry development within a dry developing chamber. In such systems, the dry developing chamber can be configured to generate plasma after the dry developing process, thereby generating vacuum ultraviolet and infrared radiation derived from the plasma and bombarding the wafer with ions. However, in some cases, this technique may result in the accidental deposition of metal particles on the wafer, which may contaminate the wafer. Ion bombardment may also cause rounding of the edges of the photoresist, which may degrade the final pattern formed on the wafer.

[0164] After considering numerous options for performing PDDB or similar procedures, the inventors have determined a completely different mechanism for performing PDDB, which allows for reduced yield losses and / or costs and / or improved performance compared to the various options discussed above. In particular, the inventors have determined that radiating the wafer after the dry development process will allow the wafer to be rapidly heated to the required PDDB temperature, for example, ~250°C, and may allow such heating to be performed without modifying the substrate temperature to provide heating.

[0165] The radiative heating discussed herein can be performed using a light source that emits a broad wavelength spectrum, such as white light or otherwise including a wide wavelength range. However, the light source used can also be specifically selected to primarily emit light of a specific wavelength (or a narrow wavelength range) to provide specific advantages. For example, a typical 300 mm diameter silicon wafer weighs approximately 125 grams. Based on the specific heat of silicon of 0.7 joules / gram / °C, raising the temperature of such wafers during the PDDB process, for example, to ~260°C, would require the transfer of at least 22.75 kJ of thermal energy (e.g., between approximately 20 kJ and 30 kJ, taking into account potential variations in temperature rise, wafer heat loss, and potential heating inefficiencies) for radiative transfer onto the wafer. The light source used can be selected to provide such a high amount of radiative energy transfer. For example, in some embodiments, one or more light sources selected to transfer (in total, when using multiple light sources) a useful power in the range of 0.5 to 5 kW can be used to provide such radiative heating efficiency.

[0166] It will be understood that the use of "one or more light sources" to perform radiant heating in the following discussion refers to the use of one or more light sources, such as any of those discussed below. It will also be understood that such light sources can be provided in various forms. For example, in some instances, a single light source providing a large illumination field can be used. In some of these embodiments, for example, a filament-based (incandescent) infrared light source, such as an infrared bulb, coupled to a parabolic or other reflector, can be provided, which can be configured to focus the light emitted therefrom into a generally circular illumination area equivalent to the wafer size. In other embodiments, solid-state illumination devices, such as infrared and / or blue light-emitting diodes (LEDs) or similar devices, can be used. For example, a plurality of surface-mount LEDs can be mounted on one or more substrates, such as printed circuit boards or flexible printed circuits, which can both support the LEDs and route power to the LEDs through traces that may be located within or on the substrate. In some embodiments, such LEDs can be arranged to form a generally circular, annular, or radially symmetrical pattern to provide a circular illumination area in general. In other embodiments, the multiple LEDs may be arranged in other patterns, such as elongated patterns, like linear or rectangular arrays, to provide different illumination area shapes.

[0167] Given that LEDs are generally much more energy-efficient than incandescent light sources, using large LED arrays as light sources allows for the desired radiative heat transfer through these light sources with less waste heat loss (compared to an equivalent incandescent light source). For example, LEDs can convert about 40% of the electrical power supplied to them into light (this may vary depending on the wavelength of the light emitted by the LED), while the remaining electrical power is dissipated from the LED as waste heat, which is generally not suitable for radiative heating. In contrast, incandescent bulbs can convert about 5% of the electrical power supplied to them into light, while the remaining electrical power is dissipated as waste heat. Therefore, compared to using incandescent light sources, using LEDs can significantly reduce the total power consumption of the radiative heating system and also significantly reduce the waste heat that needs to be handled to prevent the light source from overheating.

[0168] Many types of LEDs can be used in these light sources. Examples include chip-on-board (COB) LEDs or surface-mount diode (SMD) LEDs. For SMD LEDs, the LED chip can be fused to a printed circuit board (PCB) that may have multiple electrical contacts, thereby allowing control of each diode on the chip. For example, a single SMD chip is typically limited to having only three diodes (e.g., red, blue, or green), which can be individually controlled to create different colors (or may have fewer diodes, such as a single diode providing a specific narrow wavelength range). The size range of SMD LED chips can be, for example, 2.8 x 2.5 mm, 3.0 x 3.0 mm, 3.5 x 2.8 mm, 5.0 x 5.0 mm, and 5.6 x 3.0 mm. For COB LEDs, each chip can have more than three diodes provided on the same substrate, such as nine, twelve, ten, hundreds, or more. Regardless of the number of diodes present, COB LED chips typically have one circuit and two contacts, thus providing simple design and effective monochrome applications.

[0169] If LED-based light sources are used, it may be particularly advantageous to use LEDs that emit light primarily in the violet, indigo, and / or blue spectra (e.g., in the wavelength range of 400 nm to 490 nm) and / or the deep orange, red, near-infrared, and / or infrared spectra (e.g., in the wavelength range of 600 nm to 1300 nm). It will be understood that, as used herein, a light source emitting light primarily in a specific wavelength range is one that emits 80% or more of its photon energy within that specific wavelength range. Therefore, a light source primarily emitting blue light will emit at least 80% of its light energy at wavelengths within the blue spectrum. It will be understood that such light sources may include individual monochromatic LEDs or multicolor LEDs that are controlled to emit light only in these manner during at least some portions of the radiative heating. For example, a multicolor LED typically consists of multiple monochromatic (or narrow-spectrum) LEDs, each limited to emitting light in a different wavelength spectrum, such as a red LED, a green LED, and a blue LED. These multi-color LEDs can be controlled to turn on the blue LEDs and turn off the green and red LEDs (or operate at much lower intensities than the blue LEDs), so that 80% or more of the light energy emitted by the multi-color LEDs is in the blue spectrum.

[0170] By limiting the wavelength range of the LEDs used, the power efficiency of the light source can be further improved. For example, LEDs emitting light primarily in the blue spectrum have historically had higher power conversion efficiency (the ratio of radiant flux to input power) than LEDs emitting light primarily in the red, green, or amber spectra, or those emitting broad-spectrum light (e.g., white light). For instance, the ratio of radiant flux to input power of an LED emitting light primarily in the blue spectrum may be about 50% higher than that of an LED emitting light primarily in the red spectrum, about 200% higher than that of an LED emitting light primarily in the green spectrum, and about 500% higher than that of an LED emitting light primarily in the amber spectrum. Broad-spectrum LEDs (e.g., white LEDs) can be composed of multiple LEDs of different colors (e.g., red, green, and blue) that emit light simultaneously to produce white light of mixed wavelengths. In this example, the relatively low efficiency of the red and green LEDs will offset the efficiency of the blue LED used. Alternatively, it can be a blue LED coupled to phosphor, which emits white light when the phosphor is excited by blue wavelength light. However, the phosphor excitation process leads to a loss of its own efficiency, thus effectively reducing the ratio of radiant flux to input electrical power of the blue LED used to excite the phosphor.

[0171] Compared to LEDs with other visible spectra, LEDs emitting light primarily in the blue spectrum can therefore provide significant power savings and reduced waste heat. Furthermore, light in the blue spectrum is readily absorbed by silicon wafers, whether doped or intrinsic silicon, resulting in little or no radiative heating of the structures beneath the silicon wafer (e.g., wafer supports or substrates). For example, light in the blue spectrum can be completely absorbed in intrinsic silicon at a distance of approximately one micrometer from the blue light incident surface. This results in all or almost all of the blue (or near-blue) radiant energy exposed to the silicon wafer being absorbed by the wafer and thus used to heat the wafer.

[0172] Compared to LEDs that emit light primarily in the green or amber spectrum or emit broad-spectrum light (e.g., white light), LEDs that emit light primarily in the infrared and / or near-infrared spectrum (e.g., as discussed above) can provide similar benefits to LEDs that emit light primarily in the blue spectrum. However, infrared light from infrared LEDs (and other infrared light sources) may not be completely absorbed by some silicon wafers because infrared wavelengths have a greater penetration distance in silicon than blue wavelengths. Therefore, this may increase the likelihood that structures located on the back side of the wafer will be heated by infrared radiation (which passes through the wafer without absorption / used for radiative heating of the wafer). However, doped silicon wafers may have greater absorption characteristics, thus reducing the likelihood of infrared energy penetrating the wafer to reach structures beneath it.

[0173] One or more light sources other than the LED source can be used, such as incandescent lamps. In particular, incandescent lamps can be used, but for a given level of radiant heating, an incandescent lamp may consume significantly more power than an LED (configured to provide the same level of radiant heating). Although most incandescent lamps offer poor power conversion efficiency (as described above), infrared incandescent lamps actually have higher power conversion efficiency by comparison.

[0174] As described above, the wafer can be irradiated with light from at least one or more light sources within a specific wavelength range or multiple wavelength ranges. For example, as discussed above, the one or more light sources can be selected to emit light in the violet, indigo, and / or blue spectra (wavelength range of 400 nm to 490 nm) and / or light in the deep orange, red, and / or infrared spectra (wavelength range of 600 nm to 1300 nm). Other wavelengths or wavelength ranges may also be used, but such ranges may not produce the many benefits discussed above. The spectrum of the light used can be selected to effectively heat the wafer through radiative heating and to keep the photon energy contained substantially less than the bond energies of the many dry development byproduct molecules (e.g., alkyl tin halides and oxidants) that may be present in the dry development chamber after the dry development process. For example, the wavelength of the light used for radiative heating can be selected to have a photon energy of less than about 2.5 eV. In some embodiments, the wavelength of the light used for radiative heating can be selected to have a photon energy of less than about 3.0 eV. While this may be higher than the bond energies of some dry development byproduct molecules and thus increase the likelihood of photolysis of those molecules, the probability of photonic material interacting with byproduct molecules is likely low enough, especially under the low pressures that may exist within the processing chamber during radiative heating, that unintentional gas-phase decomposition will not occur or at a rate that does not have an unacceptably adverse effect on the wafer. For example, while dry deposition operations can be performed at chamber pressures between 5 mTorr and 600 mTorr, dry development followed by baking operations can be performed at low pressures, such as in the range of 0.1 mTorr to 100 mTorr. PEB operations can be performed at similar pressures, but also at chamber pressures up to atmospheric pressure, such as 760 Torr. Infrared or near-infrared light in the 600 nm to 1300 nm range may have photon energies in the range of ~2 eV to ~0.95 eV, which are too low to cause photoionization or bond breaking of gas molecules that may still be present in the processing chamber. Meanwhile, infrared or near-infrared radiation in the 600 nm to 1130 nm range is generally completely absorbed in intrinsic silicon within a 1 mm range of the silicon surface from which this radiation is introduced. For doped silicon, the presence of dopants can significantly reduce the absorption depth, causing all or almost all infrared or near-infrared radiation in the 600 nm to 1300 nm range to be completely absorbed by silicon within a standard semiconductor wafer thickness range (e.g., ~775 micrometers).

[0175] Such radiant heating can be performed in various ways and with various structures. Several examples of such structures are discussed below.

[0176] Figures 1 to 9 illustrate a number of example devices that may share many common components or features. In view of this commonality, unless otherwise stated, elements represented by similar reference numerals in each figure may be assumed to be similar in structure, function and characteristics.

[0177] FIG1 illustrates an example apparatus 100 including a processing chamber 102 for performing a dry development process on a semiconductor wafer (also referred to herein as a wafer) 108 on which a metal photoresist is deposited. The wafer 108 may have been previously exposed to EUV radiation in a lithography patterning operation, such as in a scanner. The processing chamber 102 may include a base 110 for receiving the wafer 108 and supporting it on its wafer support surface 112 during subsequent dry development processes.

[0178] The base 110 may incorporate elements of a base cooling system 118, which may include, for example, one or more cooling channels 114 fluidly connected to a cooling unit 116. The cooling unit 116 may be, for example, an external cooler unit configured to cool fluid pumped through it to a specific temperature setpoint. The cooled fluid may then circulate through one or more fluid flow lines or channels and through the cooling channels 114, which may be, for example, arranged along one or more flow paths within the base 110 and close to the wafer support surface 112. The cooling channels 114 may be, for example, arranged in a spiral, serpentine, or other configuration to allow for distributed cooling of the wafer 108 on the wafer support surface 112. The base cooling system 118 may be, for example, configured to cool the wafer support surface 112 and the wafer 108 (when present) to a temperature within a first temperature range, for example, from -30°C to 20°C, such as -10°C.

[0179] The processing chamber 102 may also include one or more heaters 130, such as resistive cartridge heaters, which can be controlled to heat the processing chamber 102 to an elevated temperature (relative to the temperature of the base 110), for example, a temperature in the range of -40°C to 110°C, such as 100°C.

[0180] The processing chamber 102 may also include a lifting pin mechanism 120 having a plurality of lifting pins 122 movable between a first position relative to the base 110 and a second position relative to the base 110. In the first position, the lifting pins 122 may not extend upward beyond the wafer support surface 112, i.e., the lifting pins 122 do not act to lift the wafer 108 away from the wafer support surface 112. In the second position, the lifting pins extend beyond the wafer support surface 112, i.e., the tips of the lifting pins 122 may contact the underside of the wafer 108, thus supporting the wafer 108 above the wafer support surface 112, and the wafer 108 does not actually contact the wafer support surface 112. The lifting pin mechanism 120 may include, for example, one or more linear actuators configured to move the lifting pins 122 between at least the first and second positions in response to one or more inputs.

[0181] The processing chamber 102 may also include a gas distribution system 138 configured to distribute process gases for the dry developing process on the wafer 108. In this example, the gas distribution system 138 includes a spray head 148 disposed above the wafer support surface 112. The spray head 148 may have a panel 144 having a plurality of outlets 142 for distributing process gases from a spray head filling chamber 149, the process gases being supplied to the spray head filling chamber 149 through one or more inlets 140. The spray head filling chamber 149 may be defined, for example, between the panel 144 and a backplate 146. In some embodiments, as shown in FIG1, the backplate 146 may be connected to the top of the processing chamber 102 via a rod. Such spray heads 148 may be referred to as chandelier-type spray heads. In other embodiments, the spray head 148 may be integrated into the top of the processing chamber 102 to form part of the wall of the processing chamber 102. Such spray heads may be referred to as flush-mount spray heads.

[0182] The gas distribution system 138 may be connected to or may include multiple valves 150 (150a, ... 150x-1, 150x, etc.), which can be used to control the flow of process gas or multiple gases from one or more gas sources 152 (152a, ... 152x-1, 152x, etc.) to one or more inlets 140 in response to corresponding control signals or other input signals. During gas flow operation, one or more valves 150 may be controlled, for example, by a controller (as discussed later herein), to allow gas from one or more gas sources to flow into the gas distribution system 138 and then exit the outlet 142 and enter the area above the wafer support surface 112 of the base 110.

[0183] In some embodiments, the device 100 may further include an exhaust system 126, which includes an exhaust chamber 124 (an annular channel, in this example, surrounding a central point below the wafer support surface 112), the exhaust chamber 124 being fluidly connected to the interior of the processing chamber through one or more ports or openings, thereby allowing the pump 128 of the exhaust system 126 to evacuate the processing chamber 102 to expel gas from the processing chamber 102.

[0184] The device 100 may also include, for example, a channel 106 that connects the processing chamber 102 to, for example, a second chamber 104, such as a transfer module or other chamber. The channel 106 may include a gate valve 132, which may include a gate valve actuator 134. The gate valve actuator 134 may be used to controllably raise and lower a gate 136. The gate 136 may be used to close or open the channel 106 to seal the processing chamber 102 from the second chamber 104 or to allow the wafer 108 to be transferred through the channel 106 from the processing chamber 102 along a path to the second chamber 104. It will be understood that the gate valve 132 may also be replaced by other hardware, such as a slit valve, a sliding door, a pivot door, etc., which may allow the channel 106 to be closed during wafer processing within the processing chamber 102 and opened to transfer the wafer 108 between the processing chamber 102 and the second chamber 104. Regardless of the specific hardware used, such controllable openable / closeable barriers that act to close or open a processing chamber (or other chamber) may be referred to herein as "valve mechanisms" or the like. These valve mechanisms can switch between a first configuration and a second configuration, in which the passage is closed by the valve mechanism to allow different pressure environments on either side of the valve mechanism within the passage, and in the second configuration, the passage is not closed by the valve mechanism to allow the wafer (or an object of similar size) and any hardware used to move the wafer (e.g., the end effector of a wafer handling robot) to move through the passage and enter or exit the processing chamber.

[0185] Device 100 may also include a controller 156, which may include one or more memory devices 158 and one or more processors 160. The one or more memory devices 158 may store computer-executable instructions that, when executed by the one or more processors 160, cause various components (e.g., valve 150, gate valve 132, heater, base cooling system 118, discharge system 126, etc.) to perform various operations consistent with the disclosure provided herein.

[0186] In the illustrated example, device 100 also includes a plurality of light sources 162, which in this example are LEDs 166 mounted on substrate 168. Substrate 168 may include traces that allow the one or more light sources to be controlled to illuminate. The light sources 162 are configured to direct light in a generally downward direction, for example toward wafer support surface 112 (as presented by wavy lines radiating outward from each light source 162). Processing chamber 102 may include one or more apertures that are sealed by one or more windows 164, which may be located between the light sources 162 and wafer support surface 112. The one or more windows 164 may be made, for example, of transparent silicon oxide (e.g., quartz) or contain aluminum oxide (e.g., sapphire), so that the light emitted by the one or more light sources 162 can pass through them substantially with relatively little attenuation. For example, the one or more windows may be made of a material that, at the thickness used for the one or more windows, transmits light having at least one or more wavelengths in the ranges of 400 nm to 490 nm, 600 nm to 1300 nm, or 400 nm to 490 nm and 800 nm to 1300 nm. As used herein, the term "transmittance" means light with a transmittance of at least 60% or greater in the wavelength range of interest. It will be understood that the material used for the one or more windows may also include one or more dopants, for example, to modify many of its optical properties or, in other cases, to provide enhanced performance in one or more aspects.

[0187] In this example, the spray head 148 in FIG1 is also at least partially made of a light-transmitting material (as described above), thus allowing radiation from one or more light sources 162 to similarly pass through the spray head 148 to reach the wafer support surface 112. Although the entire spray head 148 does not need to be made of such a light-transmitting material in this example, at least a portion of the panel 144 and the back plate 146 may be made of such a light-transmitting material to allow the surface of the wafer 108 to be irradiated by radiation emitted from the one or more light sources 162. In some embodiments, the one or more light sources 162 and / or the window 164 may be configured such that the area irradiated by the one or more light sources is a circular area, the size of which allows substantially the entire wafer 108 to be irradiated by the one or more light sources 162, and little or no direct light from the one or more light sources 162 can pass over the wafer 108 to directly irradiate, for example, the wafer support surface 112 or the base 110.

[0188] In these apparatuses, dry development can be performed after the wafer 108 has been introduced into the processing chamber 102 and placed on the wafer support surface 112 and cooled to a temperature within a first temperature range by the base cooling system 118. Once the wafer 108 has reached the temperature within the first temperature range, one or more sets of dry development gases can flow from the gas source 152 and through the inlet 140 through the spray head 148, exiting the spray head 148 via the outlet 142 and flowing through the wafer 108. After the steady-state flow of the one or more sets of dry development gases has occurred for a predetermined period of time or until a predetermined amount of dry development has been produced, the flow of the one or more sets of gases through the spray head 148 can be stopped. The one or more light sources 162 can then irradiate the wafer 108 to heat the wafer 108 to a temperature within a second temperature range, wherein the lower limit of the second temperature range is higher than the upper limit of the first temperature range. The second temperature range may be, for example, between 180°C and 250°C, or, for example, the temperature within the second temperature range may be, for example, ~180°C.

[0189] After the wafer 108 has been heated to a temperature within the second temperature range, the one or more light sources 162 may keep the wafer 108 at that temperature (or multiple temperatures) within the second temperature range for a period of time, during which the PDDB may be performed.

[0190] In some embodiments, during at least a portion of the time period during which the wafer 108 is irradiated by one or more light sources 162, a rinsing gas or other inert gas, such as argon, nitrogen, etc. (in this example, inert gas should be understood to include not only rare gases but also nitrogen, which is generally not reactive with most gases used in dry development processes), may flow through the gas distribution system 138 and enter the processing chamber 102 through the outlet 142. The exhaust system 126 may also be controlled to combine these rinsing gas flows to allow gas to be discharged from the processing chamber 102 through the exhaust system 126, thereby allowing any potential residual processing gas present in the processing chamber 102 to be discharged from the processing chamber 102.

[0191] In some of these embodiments, the irradiation of the wafer 108 by the one or more light sources 162 may be performed after the flushing gas flow has been initiated. In some further embodiments, the molar density of the group of one or more processing gases for the dry development process flow within the processing chamber 102 may be reduced to 10% or less of the molar density of the group of one or more processing gases within the processing chamber 102 during the dry development process flow. For example, after the dry development process has been completed, flushing gas may be flowed into the processing chamber 102, causing the pressure within the processing chamber 102 to rise to at least 10 times the pressure used, for example, during the dry development process. The processing chamber 102 may then be pumped to at least the pressure level used during the dry development process; this has the effect of diluting the one or more processing gases that may have remained in the chamber after the dry development process to a concentration of 10% or less of the molar density of the same gases during the dry development process. If necessary, these flushing and pumping cycles can be performed several times to further reduce the molar density of these gases. During these operations, the flushing gas flow can be applied intermittently or continuously.

[0192] During a first period of time before the one or more light sources 162 irradiate the wafer 108, the flushing gas flow may be maintained at a specific flow rate or multiple flow rates; the first period of time may be, for example, predefined and based on the amount of time shown to achieve the desired molar density reduction.

[0193] In some embodiments, the one or more light sources 162 may also irradiate the wafer 108 before the base cooling system 118 cools it and before the set of one or more dry developing process gases flows through it. For example, the one or more light sources may irradiate the wafer 108 before the set of one or more dry developing process gases flows through it to heat the wafer to a temperature within a third temperature range, for example, between 130°C and 250°C, such as ~200°C. The third temperature range may be, for example, the temperature range of post-exposure baking (PEB), which may be performed after the wafer 108 has been exposed to EUV radiation but before the dry developing process is performed.

[0194] Figure 2 illustrates a similar device 200 with components similar to those of device 100. However, device 200 does not feature the gas distribution system 138 of device 100, but instead has a gas distribution system 238 comprising a gas distributor 248 with a plurality of outlets 242. Unlike the spray head 148, the gas distributor 248 is essentially annular, generally surrounding the wafer 108 when viewed from above. The outlets 242 may be arranged in a circular array around the center of the wafer 108 to guide process gas radially inward and downward toward the wafer support surface 112, for example, from the annular gas distribution chamber 250 toward the center of the wafer 108. One or more inlets 240 may be provided, which may allow gas from gas source 152 to be supplied to the gas distributor 248.

[0195] A window 264 may be provided above the processing chamber 102 and between one or more light sources 262 (which may be LEDs 266) and the wafer support surface 112. The LEDs 266 may be mounted on a substrate 268, which may include traces that allow the one or more light sources 262 mounted thereon to be illuminated in a controlled manner.

[0196] Since the gas distributor 248 is annular in shape and has an opening in the middle below the window 264, the gas distributor 248 can be made of a material that does not need to transmit light from the one or more light sources 262.

[0197] It will be understood that both devices 100 and 200 can be modified to operate in a slightly different manner, which allows for more efficient wafer heating and cooling, as shown in FIG3. In FIG3, device 100 is shown again, but wafer 108 has been raised above base 110 and wafer support surface 112 by lifting pin 122 (which has been actuated to a second position relative to base 110).

[0198] By raising the wafer 108 so that it is no longer in thermal contact with the wafer support surface 112 of the base 110, the heat supplied to the wafer 108 can no longer flow from the wafer 108 to the base 110 through thermal conduction when the wafer 108 is raised. In fact, in this case, the only thermal contact between the wafer 108 and other solid objects is through the lifting pin 122 contacting the lower part of the wafer 108. Due to its long and thin nature and the small area of ​​the lifting pin 122 / wafer 108 contact area, the lifting pin 122 can provide negligible heat conduction from the wafer 108 outward. This allows the wafer 108 to be heated much faster by the one or more light sources 162 than in cases where the wafer 108 is placed directly on the wafer support surface 112 and subjected to similar irradiation-based heating. Furthermore, by thermally decoupling the wafer 108 from the substrate 110 during these irradiation-based heating processes, the apparatus 100 also allows the wafer support surface 112 of the substrate to be maintained at a much lower temperature, for example, the temperature at which a dry development process is performed.

[0199] The use of a lift pin to thermally decouple the wafer 108 from the base 110 can be performed in conjunction with any irradiation-based heating of the wafer 108 (where heating occurs within the processing chamber 102 and the wafer 108 is positioned at least horizontally above the wafer support surface 112). For example, if the wafer 108 is to be heated to perform PEB, the wafer 108 can be lifted off the wafer support surface 112 by the lift pin 122 (or alternatively, simply placed on the raised lift pin 122 without first contacting the wafer support surface 112). Similarly, if the wafer 108 is to be heated to perform PDDB, the wafer 108 can be lifted off the wafer support surface 112 by the lift pin 122 after one or more process gases for dry developing have flowed through the wafer 108.

[0200] Clearly, during radiative heating using one or more light sources 162, thermally decoupling the wafer 108 from the wafer support surface 112 of the substrate 110 not only allows the one or more light sources 162 to heat the wafer 108 much faster, but also allows the substrate cooling system 118 to cool the wafer 108 much faster, much faster than if the wafer 108 were located on the wafer support surface 112. In the latter case, heat from radiative heating would be transferred from the wafer 108 to the substrate 110, potentially causing the substrate 110 to become hot and requiring additional cooling to overcome this heat buildup before it can cool the wafer 108 down. Conversely, as described above, when the wafer 108 is heated with thermal decoupling from the wafer support surface 112 and the substrate 110, this allows the substrate cooling system 118 to maintain the wafer support surface 112 at a target temperature without excluding additional heat that may be provided, for example, during the PEB process. When wafer 108 is lowered onto the wafer support surface at the end of the PEB process, the only heat that the pedestal cooling system 118 needs to remove is the small amount of heat contained within wafer 108, for example, about 7.3 kJ for a silicon wafer 108 with a diameter of 300 mm that needs to be cooled from 180°C to -10°C.

[0201] It will be understood that thermal decoupling of wafer 108 from wafer support surface 112 and base 110 using lifting pin 122 can be implemented using any device discussed herein, wherein wafer 108 can be radiated heated while located in processing chamber 102 and generally above base 110, regardless of the specific configuration.

[0202] Figure 4 illustrates an example device 400 with a construction similar to device 100, except that the one or more light sources 462 (which may be LEDs 466) are located within the processing chamber 102 rather than within the processing chamber 102. This configuration eliminates the need to include windows 164 in the walls or top of the processing chamber 102. In this example, the one or more light sources 462 are mounted on a substrate or a plurality of substrates 468, for example, having conductive traces that allow power to be supplied to the one or more light sources to provide radiative heating to the wafer 108. The substrate 468 and the one or more light sources 462 may be covered by one or more windows 464, which can act to protect the one or more light sources 462 and / or the substrate 468 from gases that may cause harmful exposure within the processing chamber 102. In other embodiments, the one or more light sources 462 may each have an independent window 464, each of which can protect an individual light source 462. In these embodiments, window 464 may, in some instances, be part of, for example, an LED package. This can be the case in any of the embodiments discussed herein, where the light source is located within the processing chamber and / or other chambers and / or the passage between such chambers.

[0203] In FIG4, one or more light sources are positioned directly above the wafer support surface 112, such that light from the one or more light sources can be generally guided downward through the spray head 148 (as discussed above with respect to FIG1, which may be at least partially made of a light-transmitting material, such as silicon oxide or aluminum oxide or a variation thereof) onto the wafer 108.

[0204] In this particular example, wafer 108 is shown in an elevated position on lifting pin 122, and one or more light sources 462 emit light (presented by wavy lines emitted by each light source 462) onto wafer 108 to perform, for example, PDDB or PEB processes.

[0205] In addition to moving one or more light sources into the processing chamber 102, some embodiments may include multiple light sources distributed on the underside of the spray head (if present).

[0206] Figure 5 illustrates an example device 500 similar to Figure 4, except that the one or more light sources 462 have been replaced by a plurality of light sources 562 distributed on the underside of the panel 144 of the spray head 148. Although not visible in Figure 5 due to scale, Figure 6 shows a detailed view of the peripheral area of ​​the spray head 148. The light sources 562, which may be LEDs 566, are visible in Figure 6, arranged along the underside of the panel 144 and distributed between the outlets 542 of the spray head 148. The light sources 162 may be covered by windows 564, which protect the light sources 162 (and / or the substrate on which they are mounted (not shown)) from exposure to gases that may flow out from the outlets 142 during dry developing.

[0207] It will be understood that the outlet 142 and the one or more light sources 562 may not be completely co-located. For example, the outlet 142 may be distributed on a first portion of the panel 144, while the light sources 562 may be distributed or uniformly distributed on a second portion of the panel 144 (which is smaller than the first portion). For example, the first portion and the second portion may be centered on each other and each may be circular, annular, or radially symmetrical with respect to its center point.

[0208] This arrangement provides a more efficient heating mechanism than the previously discussed embodiments because the light source 562 is configured such that the light emitted from it directly incidents onto the wafer 108 without passing through the spray head 148. Furthermore, the spray head 148 in these embodiments does not need to be at least partially transparent, and therefore can be made of a material that is cheaper and easier to process than, for example, silicon oxide or aluminum oxide.

[0209] Figure 7 illustrates another device 700 similar to device 500, except that one or more light sources are arranged within the processing chamber 102 to form several circular arrays centered on the spray head 148. Figure 8 shows a detailed view of a portion of the light source within the dashed rectangle shown in Figure 7. The light source 762 (which is an LED in this example) can be mounted on the substrate 768 and can be covered by a window 764, which protects the light source 762 and the substrate 768 from the dry developing gases that may be present within the processing chamber 102. The light source 762 can be oriented to emit light primarily along an axis pointing towards the central axis of the wafer support surface 112 (i.e., towards the location of the central axis of the wafer 108 when it is present), and downward towards the location where the wafer 108 will be during radiative heating. The light from the light source 762 can illuminate the wafer 108 at a relatively shallow angle, allowing the light from the light source to illuminate the entire wafer 108, including its central portion.

[0210] The substrate 768 may be, for example, a flexible printed circuit or a similar material, which may be formed in a frustum conical shape to orient the light source 762 mounted thereon as described above. Alternatively, the substrate may be replaced by a circular array of flat, rigid printed circuit boards arranged to actually form a multifaceted frustum conical shape, each face of which may have one or more light sources 762 mounted thereon. Each of these faces may be oriented such that the normal of each face is oriented radially inward toward the central axis of the wafer support surface 112 and downward toward the wafer support surface 112.

[0211] Such arrangements allow the use of a spray head 148 that does not include a light-transmitting portion, and also allow the spray head 148 and the light source 762 to be separate components, thereby simplifying the construction of the spray head 148.

[0212] It will be understood that in all the embodiments discussed above, during radiation heating operation, wafer 108 can be thermally decoupled from base 110 by using lifting pin 122 (or other system for lifting wafer 108 away from wafer support surface 112).

[0213] In addition to the variations discussed above (where the radiative heating of the wafer is performed while the wafer 108 is still in the processing chamber 102, for example, at the same horizontal position where it is (or will be) during dry development), some embodiments may be configured to provide radiative heating to the wafer 108 during transfer into or out of the processing chamber 102 or in a chamber separate from the processing chamber 102.

[0214] For example, Figure 9 illustrates an example device 900 including a processing chamber 102. As previously described, the processing chamber 102 (which may also be considered a "first chamber") is connected via a channel 106 to a second chamber 104, which is shown in more detail in Figure 9. The second chamber 104 in this example is a vacuum transfer module. The vacuum transfer module is a chamber that is typically much larger than the processing chamber and serves as a hub for connecting multiple processing chambers. The vacuum transfer module typically includes one or more wafer handling robots or other mechanisms that allow wafers to be placed in and removed from the processing chambers to which they are connected. The interface between the vacuum transfer module and the processing chambers to which it is connected is typically equipped with some form of gate valve, slit valve, or other controllable openable / closeable barrier that allows the environment of the processing chambers to be isolated from the vacuum transfer module during wafer processing operations. The vacuum transfer module is typically connected to a vacuum pump system that allows the vacuum transfer module to operate under pressure conditions below atmospheric pressure.

[0215] In FIG. 9, the second chamber 104, as part of the vacuum transfer module, is shown to have a wafer handling robot 970, which may include one or more articulated robotic arm links that can be controlled to extend or retract and rotate about one or more axes, for example, along or around one or more axes. In FIG. 9, when the wafer 108 passes through channel 106, gate valve 132 is shown to be open, and the wafer 108 is shown to be supported by the end effector 972 of the wafer handling robot 970. The wafer 108 may be in this configuration before being placed in processing chamber 102 for dry development or during removal from processing chamber 102 after dry development.

[0216] As shown in FIG. 9, one or more light sources 962 are provided within channel 106 to illuminate wafer 108 during its passage through channel 106. In this example, the set of light sources 962 is mounted to the top plate or top inner surface (or part thereof) of channel 906, but may alternatively be mounted to or extend into processing chamber 102 and / or second chamber 104. In this example, there are two sets of light sources 962, one set on each side of gate 132. Each set of light sources may be substantially elongated in nature, for example, extending through channel 106 in a direction substantially transverse to the direction in which wafer 108 moves during its passage through channel 106, thus illuminating wafer 108 with a substantially elongated illumination area, for example, similar to a line scanner. The major axis of each light source can be selected, for example, such that the width of the irradiated area (transverse to the direction of travel of wafer 108 in the reference plane, which coincides with wafer 108 as wafer 108 is being transported through channel 106) is at least as large as the diameter (D) of wafer 108.

[0217] It will be understood that although Figure 9 shows two sets of light sources 962, each set being located on opposite sides near the gate valve 132, other embodiments may feature such light sources near one or the other side of the gate valve 132 but not on both sides of the gate valve 132.

[0218] When the wafer 108 is moved through the channel 106 by the wafer handling robot 970, the light source 962 can irradiate the wafer 108 to radiate heat. Since the end effector 972 of the wafer handling robot 970 typically only makes minimal contact with the wafer 108 (e.g., through three or four small pads on the underside or three or four short areas along the outer edge of the wafer), the amount of heat transferred from the wafer 108 to the end effector 972 through thermal conduction can be relatively small (similar to when the wafer 108 is supported on the lifting pin 122), thus allowing most of the heat transferred to the wafer 108 by the light source 962 to be retained within the wafer 108 for faster heating of the wafer 108.

[0219] In some embodiments, when the wafer 108 is located within the area illuminated by the one or more light sources 962, compared to when the wafer 108 is in a position not illuminated by the one or more light sources 962, the wafer handling robot 970 may move the wafer 108 at a reduced speed, for example, via the controller 156. In some further or alternative embodiments of these embodiments, the light sources 962 for the group of light sources may include a subset of light sources 962 that can be independently turned on and off based on the position of the end effector 972 and the wafer handling robot 970 at any given time point, in order to reduce the amount of light emitted but not significantly contributing to the radiative heating of the wafer 108. For example, if the light sources 962 in a group of light sources 962 are arranged in a single row in the direction transverse to the direction of travel of the wafer 108, then when the wafer 108 begins to pass under the light sources 962, the controller 156 can turn on only the light source or a plurality of light sources 962 closest to the center of the wafer in the group of light sources 962—the other light sources 962 in the group of light sources 962 can remain off. As the wafer 108 continues to move through the channel 106, additional light sources 962 in the group of light sources 962 can be turned on. For example, a continuous innermost plurality of "off" light sources 962 surrounding the "on" light source 962 can be turned on as the wafer 108 passes under the group of light sources 962, and an increasing amount of surface area of ​​the wafer 108 exists within the illumination area of ​​the light sources 962. Once the wafer 108 reaches the point where the wafer center is directly below the set of light sources 962, the procedure can be reversed. As the wafer 108 continues to move, the outermost pairs of "on" light sources 962 are turned off, and those light sources 962 are no longer effectively dedicated to illuminating the wafer 108 (or, for example, make the illumination they provide mainly illuminate objects other than the wafer 108).

[0220] In yet another embodiment, a radiant heating system having one or more light sources may be provided in a chamber completely separate from the processing chamber. Figure 10 illustrates an embodiment in which the processing chamber 102 is connected to the second chamber 104 via a channel 106. In this example, the second chamber 104 may be, for example, a pre-chamber located between the processing chamber 102 and the third chamber 1005, such as a vacuum transfer module chamber. The third chamber 1005 may be connected to the second chamber 104, for example, via a second channel 1007. For example, the second channel 1007 may be equipped, as appropriate, with a valve mechanism similar to, for example, a gate valve 132 (but not shown), to allow the second chamber 104 to be isolated from the third chamber 1005.

[0221] Compared to the processing chamber 102, the second chamber 104 can be simpler in construction and can, for example, have an internal volume that is only larger than that of the cylindrical reference volume (which has the same diameter as the wafer).

[0222] The second chamber 104 may contain one or more light sources 1062, which may be configured to illuminate the wafer 108 when it is located within the second chamber 104. As shown, the one or more light sources 1062 are mounted to a substrate 1068, which is mounted to the innermost surface of the second chamber 104, such as the inner top surface of the second chamber 104, to illuminate the wafer 108 located below it. In an alternative embodiment, the one or more light sources may be mounted outside the second chamber 104, and a window may be provided in the top surface of the second chamber 104 to allow the one or more light sources 962 to illuminate the wafer 108. In some embodiments, the one or more light sources may be arranged to create a circular illumination area of ​​the same size as the wafer in a reference plane (which coincides with the wafer) when the wafer is being illuminated by the one or more light sources.

[0223] The wafer 108 can be supported in the second chamber 104 by, for example, the end effector 1072 of the wafer handling robot 1070, which is located in, for example, the second chamber 104, or in the third chamber 1005 as shown in FIG. 10, but can extend into both the processing chamber 102 and the second chamber 104. Alternatively, the second chamber 104 can be equipped with a structure similar to, for example, lifting pin 122, so that the wafer 108 can be placed on and supported by the light source 1062 during radiant heating, and then subsequently removed by, for example, the wafer handling robot 1070 or similar equipment.

[0224] The foregoing discussion of various device implementations has provided some insights into how these implementations can be used. Figures 11 to 16 are discussed below to provide further details regarding possible uses of the device discussed above. Although not described below, the techniques of Figures 11 to 15 may also generally involve determining in some ways whether a wafer for a dry development process is present in the process chamber. Such determinations may be made, for example, in response to status information from various components, such as if a wafer handling robot has been commanded to place a wafer into the processing chamber, and then feedback indicating that it has performed the necessary actions for this purpose is provided, thus determining that the wafer is located in the processing chamber. In other implementations, more explicit determinations may be made, for example, using sensor data indicating when the wafer is located at one or more locations within the processing chamber. Such determinations may also be considered as determining that a wafer present in the processing chamber is ready for a dry development process (e.g., by cooling the wafer to a low temperature (e.g., as previously discussed), and, if appropriate, performing PEB on the wafer before such cooling).

[0225] Figure 11 illustrates a flowchart of a technique for performing a dry development process followed by a dry development and baking operation. In Figure 11, the technique begins at block 1102, where the wafer to be processed is placed on the wafer support surface of a base within a dry development chamber (e.g., one of the processing chambers discussed above with respect to Figures 1 to 8). The wafer to be processed is a patterned wafer containing metallic photoresist (to be subjected to the dry development process).

[0226] In block 1104, the wafer can be cooled to a temperature within a first temperature range by a base cooling system, which can be configured to maintain, for example, the temperature of at least a portion of the base having wafer supports within the first temperature range. The first temperature range may be, for example, between -30°C and 20°C, to allow the wafer to be cooled to, for example, a temperature of approximately -10°C.

[0227] Once the wafer reaches the desired temperature within the first temperature range, the dry development process can be performed in block 1106, for example, by allowing the first set of processing gases to flow through the gas distribution system of the processing chamber and through the wafer. Various possible methods can be used to determine when the wafer reaches the desired temperature, such as open-loop determination based solely on the amount of time the wafer remains on the substrate, estimation of the wafer temperature using data from temperature sensors in the substrate, or closed-loop determination using data from remote temperature sensors (e.g., a pyrometer that can be used to directly measure the wafer temperature).

[0228] The first set of processing gases can flow through the wafer for a certain period of time and be under flow conditions suitable for a specific dry development process (e.g., according to the process formulation).

[0229] Once the dry development process is complete, the wafer can be radiatively heated in block 1108, for example, by exposure to radiation emitted by one or more light sources (such as those discussed above). The wafer can be radiatively heated, for example, to a temperature in a second temperature range between, for example, 180°C and 250°C, such as approximately 180°C. The wafer can be held at this elevated temperature for a period of time, for example, up to 4, 5, 6, 7, 8, 9, or 10 minutes, which is sufficient to remove most or all of the volatile halides that may be present on the surface of the wafer.

[0230] Figure 12 illustrates a flowchart of another technique for performing a dry development followed by a dry development bake operation. In Figure 12, the technique begins at block 1202, where the wafer to be processed is radiantly heated by exposure to light from one or more light sources to heat the wafer to a temperature within a first temperature range between 130°C and 250°C, for example, approximately 200°C. The wafer to be processed is a wafer with photo-patterned metallic photoresist (to be subjected to the dry development process). The wafer can be held at these temperatures for a predetermined period of time to perform a post-exposure bake (PEB). PEB can cause broken metallic bonds (e.g., tin bonds in tin-based alkoxy resists) to transform into metal-oxygen (e.g., tin-oxygen) bonds to form a material with a stoichiometry close to that of a metal oxide (e.g., tin oxide) in the wafer region exposed to EUV radiation during the previous photo-patterning.

[0231] Once PEB is completed, the technique can proceed to block 1204, whereby if the wafer is not yet present on the wafer support surface of the pedestal within the processing chamber, the wafer can be placed on the wafer support surface of the pedestal. For example, during block 1202, the wafer can be supported above the wafer support surface by a lifting pin (which may be located, for example, in a second position) to thermally decouple the wafer from the wafer support surface and the pedestal. At the end of block 1202, the wafer can be lowered onto the wafer support surface, thereby making thermally conductive contact between the wafer and the wafer support surface and the pedestal. It will be understood that block 1202 (i.e., PEB or similar operation) can be performed at the start of any of techniques 11 to 15, as appropriate.

[0232] In block 1206, the wafer support surface can be maintained at a temperature in a second temperature range between -30°C and 20°C, for example, about -10°C, to cool the wafer to a similar temperature in preparation for dry development.

[0233] Once the wafer reaches the desired temperature within the second temperature range, the technique proceeds to block 1208, where the first set of processing gases flows through the gas distribution system of the processing chamber and through the wafer. As shown in Figure 11, various possible methods can be used to determine when the wafer reaches the desired temperature, such as open-loop determination based solely on the amount of time the wafer remains on the pedestal, estimation of the wafer temperature using data from temperature sensors in the pedestal, or closed-loop determination using data from remote temperature sensors (e.g., a pyrometer that can be used to directly measure the wafer temperature).

[0234] The first set of processing gases can flow through the wafer for a certain period of time and be under flow conditions suitable for a specific dry development process (e.g., according to the process formulation).

[0235] Once the dry development process is complete, the wafer can be radiatively heated in block 1210, for example, by exposure to radiation emitted by one or more light sources. The wafer can be radiatively heated, for example, to a temperature in a third temperature range between, for example, 180°C and 250°C, such as approximately 180°C. The wafer can be held at this elevated temperature for a period of time, such as several minutes (similar to those discussed above), which is sufficient to remove most or all of the volatile halides that may be present on the surface of the wafer.

[0236] Figure 13 illustrates a flowchart of another technique for performing a dry development process followed by a dry development and baking operation. In Figure 13, this technique begins at block 1302, where, as with other techniques discussed above, the wafer to be processed is placed on the wafer support surface of a pedestal in the dry development chamber. The wafer to be processed is a patterned wafer containing metallic photoresist (to be subjected to the dry development process). As mentioned above, optional PEB can be performed on the wafer before it is placed on the pedestal, but this is not explicitly shown in Figure 13.

[0237] In block 1304, the wafer can be cooled to a temperature within a first temperature range between -30°C and 20°C, for example, approximately -10°C, to prepare the wafer for a dry development process. This cooling can be performed, for example, using a pedestal cooling system to cool the pedestal and thus the wafer support surface and the wafer in thermal contact with it.

[0238] In block 1306, the first set of processing gases can flow through the gas distribution system of the processing chamber and through the wafer to perform a dry development operation on the wafer.

[0239] At the end of the dry development operation, block 1308 can be executed to lift the wafer off the pedestal using, for example, a lifting pin provided in the device. Once the wafer is thermally decoupled from the pedestal, the wafer can then be exposed in block 1310 to radiant heating from one or more light sources to heat the wafer to a temperature in a second temperature range between 180°C and 250°C, for example, about 180°C, for post-dry development baking to remove any volatile halides that may remain after the dry development operation.

[0240] After the wafer has been heated to a temperature within the second temperature range for a predetermined period of time, the wafer may then be removed from the processing chamber for further processing.

[0241] Figure 14 shows a flowchart of another technique for performing a dry development process followed by a dry development and baking operation. Although the techniques of Figures 11 to 13 can be implemented, for example, in equipment such as equipment 100 to 700, the technique of Figure 14 can be implemented, for example, in equipment such as equipment 900.

[0242] The technique in Figure 14 can begin with block 1402, in which, as in other techniques discussed above, the wafer to be processed is placed on the wafer support surface of a pedestal in a dry developing chamber. The wafer to be processed is a wafer with photoresist containing metal photoresist (to be subjected to the dry developing process) and photopatterned. As mentioned above, optional PEB can be performed on the wafer before it is placed on the pedestal, but this is not explicitly shown in Figure 14.

[0243] In block 1404, the wafer can be cooled to a temperature within a first temperature range between -30°C and 20°C, for example, approximately -10°C, to prepare the wafer for a dry development process. This cooling can be performed, for example, using a pedestal cooling system to cool the pedestal and thus the wafer support surface and the wafer in thermal contact with it.

[0244] In block 1406, the first set of processing gases can flow through the gas distribution system of the processing chamber and through the wafer to perform a dry development operation on the wafer.

[0245] At the end of the dry development operation, block 1408 can be executed to lift the wafer off the pedestal using, for example, a lifting pin provided in the equipment. The wafer can then be moved out of the processing chamber in block 1410 and into a channel connecting the processing chamber to an adjacent chamber (e.g., a vacuum transfer module). These wafer movements can be performed by a wafer handling robot, which can be located in the adjacent chamber and controlled to extend into the processing chamber and lift the wafer off the lifting pin using an end effector. The wafer handling robot can then be controlled to retract the end effector and the wafer it supports from the processing chamber and through the channel.

[0246] In block 1412, the wafer may be radiatively heated by irradiation from one or more light sources positioned above the wafer within the channel. In some embodiments, while the wafer passes through the channel and the one or more light sources provide irradiation, the wafer handling robot may be controlled to move at a slower speed as it transports the wafer through the channel to provide additional time for wafer heating (or maintaining it at an elevated temperature) to more thoroughly remove any volatile halides that may remain thereon. The radiative heating provided to the wafer by the one or more light sources may, for example, heat the wafer to a temperature within a second temperature range between 180°C and 250°C, such as approximately 180°C, to perform dry development followed by baking.

[0247] It will be understood that in some embodiments, during all or part of blocks 1408 and 1410, the exhaust system of the device configured to exhaust gas from the processing chamber may be operated to evacuate or partially evacuate the processing chamber, so that the pressure in the processing chamber is lower than the pressure in the adjacent chamber, thereby causing volatile halides (or other substances) that may escape from the wafer due to radiative heating to be drawn into the processing chamber and processed by the exhaust system. In some of these embodiments, if the adjacent chamber is also connected to a corresponding exhaust system, the exhaust system of the adjacent chamber may also be controlled not to evacuate to a competing vacuum that results in the adjacent chamber having a pressure lower than that of the processing chamber.

[0248] Since the processing chamber can be configured to process and dispose of such byproducts that may be generated during dry development, these embodiments allow such byproducts to be processed without the potential need for additional redundant hardware for adjacent chambers.

[0249] After the wafer has been heated to a temperature within the second temperature range for a predetermined period of time, the wafer may then be removed from the processing chamber for further processing.

[0250] To perform PEB in the technique of FIG. 14, operations similar to those in blocks 1410 and 1412 can be performed on the wafer as it is transported through the channel into the processing chamber. Similarly, in some embodiments, the discharge system can be controlled in a manner similar to that described above to draw potential byproducts of PEB into the discharge system of the processing chamber during PEB.

[0251] Figure 15 shows a flowchart of another technique for performing a dry development process followed by a dry development baking operation. As mentioned above, although the techniques of Figures 11 to 13 can be implemented, for example, in equipment such as equipment 100 to 700, and the technique of Figure 14 can be implemented in equipment such as equipment 900, the technique of Figure 15 can be implemented, for example, in equipment such as equipment 1000.

[0252] The technique in Figure 15 can begin with block 1502, wherein, as in other techniques discussed above, the wafer to be processed is placed on the wafer support surface of a pedestal in a dry developing chamber. The wafer to be processed is a wafer with photoresist containing metal photoresist (to be subjected to the dry developing process) and patterned. As mentioned above, optional PEB can be performed on the wafer before it is placed on the pedestal, but this is not explicitly shown in Figure 15.

[0253] In block 1504, the wafer can be cooled to a temperature within a first temperature range between -30°C and 20°C, for example, about -10°C, to prepare the wafer for a dry development process. This cooling can be performed, for example, using a pedestal cooling system to cool the pedestal and thus the wafer support surface and the wafer in thermal contact with it.

[0254] In block 1506, the first set of processing gases can flow through the gas distribution system of the processing chamber and through the wafer to perform a dry development operation on the wafer.

[0255] At the end of the dry development operation, block 1508 can be executed to lift the wafer off the pedestal using, for example, a lifting pin provided in the equipment. The wafer can then be moved out of the processing chamber in block 1510 and into a channel connecting the processing chamber to an adjacent chamber (e.g., a dry development post-bake chamber). These wafer movements can be performed by a wafer handling robot, which can be located in another chamber (e.g., a vacuum transfer module) to which the adjacent chamber or a second chamber can be connected. The wafer handling robot can be controlled to extend into the processing chamber and lift the wafer off the lifting pin using an end effector. The wafer handling robot can then be controlled to retract the end effector and the wafer it supports from the processing chamber and through the channel into the second chamber.

[0256] Once the wafer is located within the second chamber, it can be radiatively heated in block 1512 by illumination from one or more light sources positioned above the wafer within the second chamber. In some embodiments, the wafer may be placed on a support structure within the second chamber. Such support structures may be, for example, similar to lifting pins used in processing chambers, having minimal contact with the wafer, thus providing very little or negligible heat loss from the wafer during radiative heating.

[0257] The radiative heating provided to the wafer by the one or more light sources may, for example, heat the wafer to a temperature in a second temperature range between 180°C and 250°C, such as approximately 180°C, to perform dry development followed by baking.

[0258] After the wafer has been heated to a temperature within the second temperature range for a predetermined period of time, the wafer may then be removed from the processing chamber for further processing.

[0259] To perform PEB in the technique of FIG. 15, operations similar to those in block 1512 can be performed while the wafer is in the second chamber, prior to performing blocks 1502 to 1510, when the wafer is being transferred into the processing chamber through the second chamber. Similarly, in some embodiments, the discharge system can be controlled in a manner similar to that described above to draw potential byproducts of PEB into the discharge system of the processing chamber during PEB.

[0260] In some embodiments of the technology in FIG15, the discharge system of the processing chamber is operable to make the pressure in the processing chamber less than the pressure in the second chamber; when the passage between the processing chamber and the second chamber remains open and such pressure difference exists, this can act to draw any byproducts that may be driven out of the wafer by radiative heating in block 1512 (or similar heating performed before blocks 1502 to 1510 to perform PEB) into the discharge system for proper handling.

[0261] The apparatus (e.g., apparatus 100 to 700) may also be specifically configured to use one or more light sources to perform a chamber cleaning operation on the processing chamber 102. Figure 16 illustrates a flowchart of an exemplary cleaning procedure.

[0262] In block 1602, a clean wafer can be placed in the processing chamber. The clean wafer can be placed manually in the processing chamber or introduced by a wafer handling robot, for example, by retrieving it from a designated location (e.g., from a specific wafer bay on the FOUP or from a special holding station located on the equipment) and then placing it into the processing chamber via a wafer handling robot of a vacuum transfer module. The equipment controller can receive commands to perform chamber cleaning operations, which can cause the controller to drive the equipment to perform the operations of the technique in FIG16.

[0263] The clean wafer may be the typical size and shape of a wafer processed within a processing chamber, but may be specifically configured to have a diffuse upper surface. In other words, the surface of the clean wafer facing the one or more light sources (or ultimately illuminated by them) may have a slightly rough surface that can act to diffuse and scatter radiation from the one or more light sources (which surround the wafer in a random but relatively uniform manner). For example, the clean wafer may have a surface roughness on the side facing the one or more light sources that corresponds to one or two wavelengths of light emitted by the one or more light sources. In some embodiments, the clean wafer may have a surface-processed upper surface in which the diffuser rate is between 60% and 100% of the total reflectance in the band of interest (e.g., in the range of 400 nm to 490 nm and / or 600 nm to 1300 nm).

[0264] In some embodiments, the surface of the calibration wafer may be coated with the same or similar material as that present on the wafer during dry development within the processing chamber. For example, if the processing chamber is used for dry development of a wafer containing a metallic photoresist (e.g., a photoresist containing tin, hafnium, or tellurium), the cleaning wafer may have an upper surface that can be coated with a similar material (e.g., tin, hafnium, or tellurium). The underside of the cleaning wafer may, for example, remain uncoated to ensure that the wafer support surface only contacts a material similar to that introduced into the processing chamber during actual wafer processing.

[0265] In block 1604, a clean wafer can be irradiated by one or more light sources. Light from the one or more light sources irradiating the wafer can diffuse from the wafer and then irradiate the processing chamber and various surfaces equipped therein (e.g., portions of a gas distribution system, a base, etc.) that may contain volatile halides. When reflected light irradiates these surfaces, it can radiate heat them, thereby helping to remove any residual volatile halides that may remain there.

[0266] In some embodiments, the processing chamber may be maintained at a relatively low absolute pressure, such as tens of torr, using a gas (e.g., helium) with relatively high thermal conductivity (e.g., about 0.15 W / mK or higher at 300 K). This pressure can help balance any temperature differences that may exist on the temperature-contacting wall surfaces, resulting in a more uniform temperature distribution across the chamber walls. In some of these embodiments, the exhaust system and gas distribution system of the processing chamber may be controlled during cleaning operations to maintain a relatively high volumetric flow rate through the processing chamber, for example, equal to at least 6 times the free volume of the processing chamber per minute (1 / 10 of the free volume of the processing chamber per second). Such airflow may result in a molecular drag effect, which can help draw out volatile halides, water, and, for example, organometallic halides and metal halides (e.g., alkyltin bromide) that may be released during the cleaning process from the processing chamber.

[0267] In some embodiments, during at least a portion of the time the cleaning wafer is exposed to light from the one or more light sources, the cleaning wafer may be supported above the wafer support surface of a base within the processing chamber, for example using lifting pins. Lifting the cleaning wafer from the wafer support surface in this manner allows potential process residues that may have accumulated on portions of the wafer support surface (typically covered by the wafer) to be potentially removed, for example, by heating provided by reflected radiation from the one or more light sources.

[0268] Once the cleaning operation has been completed, for example after a predetermined time period, the cleaned wafer can then be removed from the processing chamber at block 1606, and normal processing operations can be resumed.

[0269] It will be understood that any techniques discussed herein involving radiative heating of a wafer to a temperature within a specific temperature range or a specific temperature can be implemented in a closed-loop manner using data, for example, from remote temperature sensors. For example, the apparatus discussed herein may be equipped with one or more remote temperature sensors, such as pyrometers, which can be used to obtain temperature measurements of the wafer without contact with it. For example, a pyrometer installed within a processing chamber or outside a processing chamber but with a line-of-sight view of the wafer through a window of the processing chamber can be used to obtain temperature measurements of one or more points on the wafer. In some embodiments, these measurements can be used to guide the control of the one or more light sources; for example, the device controller may reduce the intensity of the one or more light sources or turn them off for a period of time and then turn them back on when the wafer temperature reaches a certain temperature threshold, thereby reducing the radiative heat supplied to the wafer. This reduction in intensity or irradiation time reduces the heat transferred to the wafer, preventing it from potentially exceeding the relevant temperature range of the heating operation in question. If necessary, the controller can also increase the intensity of one or more light sources or reduce the time they are off to raise the wafer temperature again when it begins to drift below the lower limit of a relevant temperature range. For example, it may be necessary to keep the wafer temperature below about 200°C to avoid damaging the wafer and / or structures or features that may be included thereon. The controller can be configured to monitor the wafer temperature and then adjust the intensity of the light emitted by the one or more light sources (e.g., by reducing the voltage or current supplied to the LED or other illumination device, or by rapidly cycling the LED between on and off states, for example, similar to the operation of a consumer LED dimmable bulb), or the duration of illumination by the one or more light sources, to reduce the amount of radiant heating provided when the wafer temperature approaches the 200°C mark.

[0270] It will be understood that the techniques, methods and procedures discussed herein may be implemented in a device (e.g., the device discussed herein) through one or more controllers (e.g., controller 156 discussed above).

[0271] In some embodiments, the controller is part of a system, which may include or may be part of one of the examples described above. Such systems may include semiconductor processing equipment comprising a processing tool or multiple tools, a chamber or multiple chambers, a processing platform or multiple platforms, and / or specific processing components (wafer pedestals, airflow systems, etc.). Such systems may be combined with electronic equipment to control the operation of semiconductor wafers or substrates before, during, and after processing. Such electronic equipment may refer to a "controller" that controls various components or subcomponents of the system or multiple systems. Depending on the processing conditions and / or system type, the controller may be programmable to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (such as heating and / or cooling), light source control for radiant heating, pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, and wafer transfer (entry and exit from tools and other transfer tools connected or coupled to a specific system, and / or loading chambers).

[0272] Broadly speaking, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, initiating cleaning operations, initiating endpoint measurements, and the like. Integrated circuits may include: a wafer in the form of firmware storing program instructions, a digital signal processor (DSP), a wafer defined as an application-specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller executing program instructions (e.g., software). Program instructions may be instructions transmitted to the controller in the form of various individual settings (or program files) that define operating parameters for implementing a specific process (on a semiconductor wafer, or for a semiconductor wafer, or for a system). In some embodiments, the operating parameters may be part of a formulation defined by a process engineer to achieve one or more processing steps during the manufacturing process of one or more of the following: layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer grains.

[0273] The controller may in some embodiments be part of, or coupled to, a computer that is integrated with the system, coupled to the system, connected to the system in the manner of other networks, or a combination thereof. For example, the controller may be in all, or part of a “cloud” or factory host computer system that allows remote access to wafer processing. The computer enables remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance measures from plural manufacturing operations to change the parameters of the current processing, set the processing steps after the current processing, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network that may include a local area network or an Internet network. The remote computer may contain a user interface capable of parameter and / or setting input or programming, which may then be transmitted from the remote computer to the system. In some examples, the controller receives a data form instruction that specifies parameters for each processing step that is about to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be executed, and the type of tool to which the system controller 850 is engaged or controlled. Accordingly, as described above, the controller may be decentralized, for example by means of a controller comprising one or more separate controllers connected together in a network manner and operating toward a common purpose (e.g., processes and control described herein). Distributed controllers for this purpose An example is one or more integrated circuits on the chamber communicating with one or more integrated circuits located at a remote end (e.g., at the level of the platform, or as part of a remote computer), which are combined to control the process on the chamber.

[0274] Despite the above discussion focusing on dry development chambers, further exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, rotary cleaning chambers or modules, metal-coated chambers or modules, cleaning chambers or modules, beveled edge portion etching chambers or modules, physical vapor deposition (PVD) chambers or molds group, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, developer (track) chambers or modules, and any other semiconductor treatment system that can be associated with, or used, in the fabrication and / or processing of semiconductor wafers.

[0275] As described above, depending on the process steps or plural steps to be performed with recourse to the tool, the controller may communicate with one or more of the following in a semiconductor manufacturing plant: other tool circuits or modules, other tool members, cluster tools, other tool interfaces, adjacent tools, adjacent tools, tools distributed throughout the plant, a master computer, another controller, or a tool port used in a material carrying or to and from the tool port used in the material transport.

[0276] Any ordinal designations used in this invention and claims (if any), such as (a), (b), (c)... or similar, should be understood not to indicate any particular order or sequence unless such order or sequence is explicitly specified. For example, if there are three steps labeled (i), (ii), and (iii), it should be understood that, unless otherwise specified, these steps may be performed in any order (or even simultaneously, if there are no other restrictions). For example, if step (ii) involves processing an element established in step (i), then step (ii) can be considered to occur at some point after step (i). Similarly, if step (i) involves processing an element established in step (ii), then it should be understood to be the opposite. It should also be understood that the use of the ordinal designation "first" (e.g., "first item") herein should not be construed as implying or inherently suggesting that there must be a "second" instance (e.g., "second item").

[0277] It should be understood that the phrase "for each of the one or more <items>", "for each of the one or more <items>", or similar expressions used herein include both a single group of items and multiple groups of items. That is, the use of the phrase "for each of" means, in programming languages, that it is used to refer to each item in the entire group of items referred to. For example, if the group of items referred to is a single item, then "each" will refer only to that single item (although in fact, the dictionary definition of "each" is often defined as "each of two or more things"), and does not mean that at least two of such items must be present. Similarly, the terms "set" or "subset" should not be regarded by themselves as necessarily containing a plural number of items—it will be understood that a set or subset may contain only one member or multiple members (unless the context indicates otherwise).

[0278] Terms such as “about,” “probably,” “substantively,” “nominally,” and the like, when used to refer to a quantity or similar quantifiable characteristic, shall be understood to include values ​​within ±10% of the specified value or relation (and include the specified actual value or relation), unless otherwise specified.

[0279] Unless otherwise stated, the term "between" as used herein and when used with numerical ranges shall be understood to include (unless otherwise specified) both the beginning and end values ​​of the range. For example, "between 1 and 5" shall be understood to include the numbers 1, 2, 3, 4 and 5, and not just the numbers 2, 3 and 4.

[0280] It should be understood that the examples and embodiments described herein are for illustrative purposes only, and many modifications or changes will be suggested to those skilled in the art in light of this. Although many details have been omitted for clarity, many design alternatives may be implemented. Therefore, these examples should be considered illustrative rather than restrictive, and the invention is not limited to the details given herein, but can be modified within the scope of the invention.

[0281] It should be understood that although the above disclosure focuses on a specific exemplary embodiment or multiple embodiments, it is not limited to the discussed examples, but can also be applied to similar variations and mechanisms, and such similar variations and mechanisms are also considered to be within the scope of the present invention. At least, the embodiments numbered below are considered to be within the scope of the present invention, but this should not be considered as an exclusive list of embodiments within the scope of the present invention.

[0282] Embodiment 1: An apparatus comprising: a processing chamber; a base located within the processing chamber and having a wafer support surface configured to support a wafer during dry development processing within the processing chamber; a base cooling system configured to cool at least the wafer support surface of the base; one or more light sources configured to direct light into the processing chamber and at a location on or above the base; and a gas distribution system having one or more inlets and a plurality of outlets configured to direct gas flowing therethrough from the outlets into a region above the wafer support surface of the base.

[0283] Embodiment 2: The device of Embodiment 1, wherein at least one of the one or more light sources is configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm, light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light mainly in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0284] Embodiment 3: The device of Embodiment 1, wherein at least one of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0285] Embodiment 4: The device of Embodiment 1, wherein at least one of the one or more light sources is configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0286] Embodiment 5: The device of Embodiment 1, wherein there are a plurality of light sources, and at least most of the light sources are configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm, light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light mainly in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0287] Embodiment 6: The device of Embodiment 1, wherein there are multiple light sources, and at least most of the light sources are configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0288] Embodiment 7: The device of Embodiment 1, wherein there are multiple light sources, and at least most of the light sources are configured to emit light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0289] Embodiment 8: The apparatus of Embodiment 1, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0290] Embodiment 9: The apparatus of Embodiment 1, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0291] Embodiment 10: The apparatus of Embodiment 1, wherein each of the one or more light sources is configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0292] Embodiment 11: The device of Embodiment 1, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0293] Embodiment 12: The device of Embodiment 2, wherein at least one of the one or more light sources is an infrared incandescent lamp, an infrared light-emitting diode, or a blue light-emitting diode.

[0294] Embodiment 13: The device of any one of Embodiments 1 to 12, wherein the one or more light sources comprise a plurality of light-emitting diodes (LEDs) distributed throughout the circular or annular region. Embodiment 14: The device of any one of Embodiments 1 to 13, further comprising one or more windows, each window being located between one or more of the light sources and a wafer support surface, wherein each of the one or more windows has a region that is transparent to light having at least one or more wavelengths within a range or a plurality of ranges of 400 nm to 490 nm, 800 nm to 1300 nm, or 400 nm to 490 nm and 800 nm to 1300 nm.

[0295] Embodiment 15: The device described in Embodiment 14, wherein the one or more windows comprise aluminum oxide or silicon oxide.

[0296] Embodiment 16: The apparatus of any one of Embodiments 1 to 15, wherein: the gas distribution system includes a spray head extending above and perpendicularly away from the wafer support surface, and at least some outlets distributed on a first portion of the panel of the spray head and extending through the first portion of the panel of the spray head, the panel having a first surface facing the wafer support surface.

[0297] Embodiment 17: The device of Embodiment 16, wherein: the one or more light sources include a plurality of light-emitting diodes (LEDs), and the LEDs of the plurality of LEDs are distributed on a second portion of the panel.

[0298] Embodiment 18: The device of Embodiment 17, wherein the LEDs of the plurality of LEDs are scattered between the outlets and located in the second part of the panel.

[0299] Embodiment 19: The device of embodiment 17 or embodiment 18, wherein the first part and the second part are both circular, annular or radially symmetrical in shape and centered on each other.

[0300] Embodiment 20: The apparatus of Embodiment 16, wherein: a spray head is disposed between a wafer support surface and at least some of the one or more light sources, and the spray head has a region that is at least partially transparent to light having a wavelength or a plurality of wavelengths in a range or a plurality of ranges of 400 nm to 490 nm, 800 nm to 1300 nm, or 400 nm to 490 nm and 800 nm to 1300 nm.

[0301] Embodiment 21: The device of embodiment 16, wherein: the spray head includes a panel on which outlets are distributed, and at least the panel of the spray head is made of a material including silicon oxide or aluminum oxide.

[0302] Embodiment 22: The device of any one of embodiments 1 to 13 further includes one or more windows, each window being located between one or more light sources and a wafer support surface, or embodiments 14 to 21, wherein: the one or more windows close a corresponding one or more holes of the processing chamber, and the one or more light sources are located outside the processing chamber and configured to emit light through the one or more windows to enter the processing chamber.

[0303] Embodiment 23: The device of any one of Embodiments 1 to 13 further includes one or more windows, each window being located between one of the one or more light sources and the wafer support surface, or Embodiments 14 to 21, wherein the one or more light sources are light-emitting diodes located in the processing chamber, and at least some of the one or more windows are also located in the processing chamber.

[0304] Embodiment 24: The apparatus of any one of Embodiments 1 to 23 further includes a controller configured to: a) determine that a wafer in the processing chamber is ready for a dry development process; b) cause a pedestal cooling system to cool the wafer to a temperature within a first temperature range, and the wafer is supported by a wafer support surface; c) cause a gas distribution system to flow a first set of one or more processing gases through the plurality of outlets and through the wafer, and the temperature of the wafer is within the first temperature range to perform a dry development process; and d) after (c), cause the one or more light sources to irradiate the wafer to heat the wafer to a temperature within a second temperature range, where the lower limit is higher than the upper limit of the first temperature range.

[0305] Embodiment 25: The apparatus of embodiment 24 further includes a pyrometer configured to obtain a temperature measurement of the wafer over a period of at least (d), wherein the controller is further configured to: monitor the temperature of the wafer using the pyrometer, and adjust the intensity level of the one or more light sources based on the temperature of the wafer to keep the temperature of the wafer below 200°C.

[0306] Implementation 26: The device of Implementation 24, wherein the controller is further configured to: (e) allow inert gas to flow through the gas distribution system and its outlet after (c), and perform (d) after or during (e).

[0307] Embodiment 27: The apparatus of Embodiment 24, wherein the inert gas includes argon, nitrogen, xenon, helium, krypton, or any combination of two or more thereof.

[0308] Embodiment 28: The apparatus of Embodiment 26 or 27 further includes a discharge system connected to the processing chamber, wherein the controller is further configured to: discharge gas from the processing chamber through the discharge system during at least a portion of (e), and perform (d) after the residual molar density of the first group of one or more process gases in the processing chamber is reduced to 10% or less of the molar density of the first group of one or more process gases in the processing chamber during the steady-state airflow that occurs during (c).

[0309] Embodiment 29: The apparatus of any one of Embodiments 24 to 28, wherein the controller is configured to irradiate the wafer with one or more light sources before (b) to heat the wafer to a temperature within a third temperature range.

[0310] Embodiment 30: The device of any one of embodiments 24 to 28 further includes a lifting pin mechanism having a plurality of lifting pins, wherein: the lifting pin mechanism is configured such that the lifting pins are controllably movable relative to the base between a first position and a second position, each lifting pin does not extend upward beyond the wafer support surface at the first position, each lifting pin extends upward beyond the wafer support surface at the second position, and wherein the controller is configured to place the lifting pins of the lifting pin mechanism in the first position during at least a portion of both (b) and (c).

[0311] Embodiment 31: The device of embodiment 30, wherein the controller is configured to place the lifting pin of the lifting pin mechanism in the second position during at least a portion of (d).

[0312] Embodiment 32: The apparatus of embodiment 30 or embodiment 31, wherein the controller is configured to: irradiate the wafer with one or more light sources before (b) to heat the wafer to a temperature within a third temperature range, and to place the lifting pin of the lifting pin mechanism in a second position during at least a portion of the irradiation of the wafer before (b).

[0313] Embodiment 33: An apparatus of any one of Embodiments 24 to 32, wherein the controller is configured to: receive an instruction to perform a chamber cleaning operation; place a cleaning wafer in a first chamber, wherein the cleaning wafer has a reflective, high-diffusivity coating on its surface; irradiate the surface of the cleaning wafer with the reflective, high-diffusivity coating with one or more light sources for a first time period; and remove the cleaning wafer from the first chamber after the first time period.

[0314] Embodiment 34: The device of embodiment 33, wherein the reflective, high diffusivity coating is made of tin, tellurium or hafnium.

[0315] Embodiment 35: The apparatus of Embodiment 33 or Embodiment 34, wherein the surface having a reflective, high diffusivity coating has a surface roughness equal to one or two wavelengths of light from one or more light sources irradiating the wafer.

[0316] Embodiment 36: The apparatus of any one of Embodiments 33 to 35 further includes the cleaned wafer.

[0317] Embodiment 37: An apparatus comprising: a first chamber; a second chamber; a channel configured to connect the first chamber and the second chamber, the channel being sized to allow a wafer to move through it along a first path between the first chamber and the second chamber; a base located within the first chamber and having a wafer support surface configured to support the wafer during dry development processing within the first chamber; a base cooling system configured to cool at least the wafer support surface of the base; a gas distribution system having one or more inlets and a plurality of outlets configured to direct gas flowing therethrough from the outlets into a region above the wafer support surface of the base; and one or more light sources disposed in at least one of: within the first chamber and adjacent to the channel, within the channel, or within the second chamber, wherein the one or more light sources are configured to direct light to a location through which the wafer will pass when it is moved from the first chamber and through the second chamber.

[0318] Embodiment 38: The device of embodiment 37, wherein: the channel includes a valve mechanism configured to close the channel in a first configuration, and the one or more light sources are located near the side of the valve mechanism closest to the base.

[0319] Embodiment 39: The device of embodiment 37, wherein: the channel includes a valve mechanism configured to close the channel in a first configuration, and the one or more light sources are located near the side of the valve mechanism furthest from the base.

[0320] Embodiment 40: The device of embodiment 37, wherein: the channel includes a valve mechanism configured to close the channel in a first configuration, the one or more light sources are multiple light sources, and the one or more light sources include a first group of one or more light sources and a second group of one or more light sources, the first group of light sources is configured such that the valve mechanism is located between the first group of light sources and the base, and the second group of light sources is configured to be horizontally located between the valve mechanism and the base.

[0321] Embodiment 41: The apparatus of any one of Embodiments 38 to 40, wherein the one or more light sources are configured to generate at least an elongated irradiation area when power is supplied, the irradiation area having at least a width D in a direction perpendicular to the first path and located on a reference plane, wherein D is the diameter of the wafer.

[0322] Embodiment 42: The apparatus of any one of Embodiments 38 to 41, wherein the second chamber is a vacuum transfer module having one or more wafer handling robots.

[0323] Embodiment 43: The apparatus of Embodiment 42 further includes a controller configured to: a) determine that a wafer in a first chamber is ready for a dry development process; b) cause a pedestal cooling system to cool the wafer to a temperature within a first temperature range, and the wafer is supported by a wafer support surface; c) cause a gas distribution system to flow a first set of one or more processing gases through a plurality of outlets and through the wafer, and the temperature of the wafer is within the first temperature range to perform a dry development process; d) remove the wafer from the wafer support surface, leave the first chamber, pass through a channel, and pass through a second chamber; and e) cause the one or more light sources to irradiate the wafer after it has been removed from the wafer support surface and when the wafer is removed from the first chamber, to heat the wafer to a temperature within a second temperature range, with the lower limit higher than the upper limit of the first temperature range.

[0324] Embodiment 44: The apparatus of embodiment 43 further includes a discharge system configured to discharge gas from the first chamber when power is supplied, wherein the controller is configured to activate the discharge system to maintain the pressure in the first chamber below the pressure in the second chamber for at least a portion of (d) and (e).

[0325] Embodiment 45: The apparatus of embodiment 43 or embodiment 44, wherein the controller is configured to irradiate the wafer with one or more light sources when the wafer is moved from the second chamber to the first chamber before (a) to heat the wafer to a temperature in a third temperature range where the lower limit is higher than the upper limit of the first temperature range.

[0326] Embodiment 46: The apparatus of embodiment 43 further includes a discharge system configured to discharge gas from the first chamber when power is supplied, or embodiment 44, wherein the controller is configured to: f) irradiate the wafer with one or more light sources when the wafer is moved from the second chamber into the first chamber before (a) to heat the wafer to a temperature in a third temperature range with a lower limit higher than the upper limit of the first temperature range, and g) activate the discharge system during at least a portion of (f) to maintain the pressure in the first chamber lower than the pressure in the second chamber.

[0327] Embodiment 47: The apparatus of embodiment 37, wherein: the second chamber has an internal volume greater than the cylindrical reference volume of diameter D, where D is the diameter of the wafer, and the one or more light sources are arranged in the second chamber and illuminate a circular area of ​​diameter D in the first reference plane.

[0328] Embodiment 48: The apparatus of Embodiment 47 further includes a transfer module, which includes one or more wafer handling robots, wherein the second chamber is located between the first chamber and the transfer module.

[0329] Embodiment 49: The apparatus of Embodiment 47 or 48 further includes a controller configured to: a) determine that a wafer in a first chamber is ready for a dry development process; b) cause a pedestal cooling system to cool the wafer to a temperature within a first temperature range, and the wafer is supported by a wafer support surface; c) cause a gas distribution system to flow a first set of one or more processing gases through the plurality of outlets and through the wafer, and the temperature of the wafer is within the first temperature range to perform a dry development process; d) remove the wafer from the wafer support surface, leave the first chamber, pass through a channel, and enter a second chamber; and e) cause one or more light sources to irradiate the wafer after the wafer has been moved from the first chamber to the second chamber to heat the wafer to a temperature within a second temperature range, with the lower limit above the upper limit of the first temperature range.

[0330] Embodiment 50: The apparatus of embodiment 49, wherein the controller is configured to cause one or more light sources to irradiate the wafer before it is moved into the first chamber and while it is in the second chamber before (a), so as to heat the wafer to a temperature in a third temperature range where the lower limit is higher than the upper limit of the first temperature range.

[0331] Embodiment 51: The apparatus of any one of Embodiments 37 to 50, wherein at least one of the one or more light sources is configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm, light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light mainly in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0332] Embodiment 52: The apparatus of any one of Embodiments 37 to 50, wherein at least one of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0333] Embodiment 53: The apparatus of any one of embodiments 37 to 50, wherein at least one of the one or more light sources is configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0334] Example 54: The device of any of embodiments 37 to 50, wherein there are a plurality of light sources, and at least most of the light sources are configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm, light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light mainly in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0335] Example 55: The device of any of embodiments 37 to 50, wherein there are multiple light sources, and at least most of the light sources are configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0336] Example 56: The device of any of embodiments 37 to 50, wherein there are multiple light sources, and at least most of the light sources are configured to emit light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0337] Embodiment 57: An apparatus of any one of Embodiments 37 to 50, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0338] Embodiment 58: The apparatus of any one of Embodiments 37 to 50, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0339] Embodiment 59: The apparatus of any one of Embodiments 37 to 50, wherein each of the one or more light sources is configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0340] Embodiment 60: The apparatus of any one of Embodiments 37 to 50, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0341] Embodiment 61: The device of any one of Embodiments 51 to 60, wherein at least one of the one or more light sources is an infrared incandescent lamp, an infrared light-emitting diode, or a blue light-emitting diode.

[0342] Embodiment 62: A method comprising: a) placing a wafer on a wafer support surface of a base in a processing chamber; b) cooling the wafer to a temperature within a first temperature range, wherein the wafer is supported by the wafer support surface; c) flowing a first set of one or more processing gases through a plurality of outlets of a gas distribution system and through the wafer, wherein the temperature of the wafer is within the first temperature range to perform a dry development process; and d) irradiating the wafer after (c) and within the processing chamber with one or more light sources to heat the wafer to a temperature within a second temperature range, wherein the lower limit is higher than the upper limit of the first temperature range.

[0343] Embodiment 63: The method of Embodiment 62, wherein at least one of the one or more light sources is configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm, light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light mainly in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0344] Embodiment 64: The method of Embodiment 62, wherein at least one of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0345] Embodiment 65: The method of Embodiment 62, wherein at least one of the one or more light sources is configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0346] Embodiment 66: The method of Embodiment 62, wherein there are multiple light sources, and at least most of the light sources are configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm, light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light mainly in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0347] Embodiment 67: The method of Embodiment 62, wherein there are multiple light sources, and at least most of the light sources are configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0348] Embodiment 68: The method of Embodiment 62, wherein there are multiple light sources, and at least most of the light sources are configured to emit light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0349] Embodiment 69: The method of Embodiment 62, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0350] Embodiment 70: The method of Embodiment 62, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0351] Embodiment 71: The method of Embodiment 62, wherein each of the one or more light sources is configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0352] Embodiment 72: The method of Embodiment 62, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0353] Embodiment 73: The method of any one of Embodiments 62 to 73, wherein at least one of the one or more light sources is an infrared incandescent lamp, an infrared light-emitting diode, or a blue light-emitting diode.

[0354] Embodiment 74: The method of any one of Embodiments 62 to 73, wherein the one or more light sources comprise a plurality of light-emitting diodes (LEDs) distributed throughout the circular or annular region.

[0355] Embodiment 75: The method of any one of Embodiments 62 to 74 further includes guiding light from the one or more light sources through one or more windows, each window being located between one of the one or more light sources and a wafer support surface, wherein each of the one or more windows has a region that is transparent to light having at least one or more wavelengths in the range of 400 nm to 490 nm, 800 nm to 1300 nm, or 400 nm to 490 nm and 800 nm to 1300 nm.

[0356] Embodiment 76: The method of embodiment 75, wherein the one or more windows are made of a material including alumina or silicon oxide.

[0357] Embodiment 77: The method of any one of Embodiments 62 to 76, wherein: the gas distribution system includes a spray head extending above and perpendicularly away from the wafer support surface, and at least some outlets distributed on a first portion of the panel of the spray head and extending through the first portion of the panel of the spray head, the panel having a first surface facing the wafer support surface.

[0358] Implementation 78: The method of Implementation 77, wherein: the one or more light sources include a plurality of light-emitting diodes (LEDs), and the LEDs of the plurality of LEDs are distributed on a second portion of the panel.

[0359] Implementation 79: The method of Implementation 78, wherein the LEDs of the plurality of LEDs are scattered between the outlets and located within the second part of the panel.

[0360] Implementation 80: The method of Implementation 78 or Implementation 79, wherein the first part and the second part are both circular, annular or radially symmetrical in shape and centered on each other.

[0361] Embodiment 81: The method of Embodiment 77, wherein: the spray head is located between the wafer support surface and at least some of the one or more light sources, and the spray head has a region that is at least partially transparent to light having a wavelength or a plurality of wavelengths in a range or a plurality of ranges of 400 nm to 490 nm, 800 nm to 1300 nm, or 400 nm to 490 nm and 800 nm to 1300 nm.

[0362] Embodiment 82: The method of embodiment 77, wherein: the spray head includes a panel having outlets distributed thereon, and at least the panel of the spray head is made of a material including silicon oxide or aluminum oxide.

[0363] Embodiment 83: The method of any one of Embodiments 62 to 74 further includes emitting light from the one or more light sources through one or more windows, each window being located between one or more of the one or more light sources and the wafer support surface, or Embodiments 75 to 82, wherein: the one or more windows close corresponding one or more holes of the processing chamber, and the one or more light sources are located outside the processing chamber and configured to emit light through the one or more windows to enter the processing chamber.

[0364] Embodiment 84: The method of any one of Embodiments 62 to 74 further includes emitting light from the one or more light sources through one or more windows, each window being located between one of the one or more light sources and a wafer support surface, or Embodiments 75 to 82, wherein the one or more light sources are light-emitting diodes located within a processing chamber, and at least some of the one or more windows are also located within a processing chamber.

[0365] Embodiment 85: The method of any one of Embodiments 62 to 84 further includes: monitoring the temperature of the wafer using a pyrometer, and adjusting the intensity level of the one or more light sources based on the temperature of the wafer to keep the temperature of the wafer below 200°C.

[0366] Implementation 86: The method of any one of Implementations 62 to 84 further includes: (e) flowing an inert gas through a gas distribution system and its outlet after (c), and performing (d) after or during (e).

[0367] Embodiment 87: The method of any one of Embodiments 62 to 84, wherein the inert gas includes argon, nitrogen, xenon, helium, krypton, or any combination of two or more thereof.

[0368] Implementation 88: The method of Implementation 86 or 87 further includes: discharging gas from the processing chamber through the discharge system during at least a portion of (e), and performing (d) after the residual molar density of the first group of one or more process gases in the processing chamber is reduced to 10% or less of the molar density of the first group of one or more process gases in the processing chamber during the steady-state gas flow that occurs during (c).

[0369] Embodiment 89: The method of any one of Embodiments 85 to 88 further includes irradiating the wafer before (b) to heat the wafer to a temperature within a third temperature range.

[0370] Embodiment 90: The method of any one of Embodiments 85 to 88 further includes placing the lifting pin of the lifting pin mechanism in a first position during at least a portion of both (b) and (c), wherein the lifting pin is controllably movable relative to the base between the first position and the second position, each lifting pin not extending upward beyond the wafer support surface in the first position, and each lifting pin extending upward beyond the wafer support surface in the second position.

[0371] Embodiment 91: The method of embodiment 90 further includes placing the lifting pin of the lifting pin mechanism in a second position during at least a portion of (d).

[0372] Embodiment 92: The method of Embodiment 90 or Embodiment 91 further includes:

[0373] Before (b), the wafer is irradiated with one or more light sources to heat the wafer to a temperature within the third temperature range, and

[0374] During at least a portion of the period prior to (b) when the wafer is irradiated, the lifting pin of the lifting pin mechanism is placed in the second position.

[0375] Embodiment 93: The method of any one of Embodiments 85 to 92 further includes: receiving an instruction to perform a chamber cleaning operation; placing a cleaning wafer in a first chamber, wherein the cleaning wafer has a reflective, high-diffusivity coating; irradiating the cleaning wafer with one or more light sources for a first time period; and removing the cleaning wafer from the first chamber after the first time period.

[0376] Embodiment 94: The method of embodiment 93, wherein the reflective, high diffusivity coating is made of tin, tellurium or hafnium.

[0377] Embodiment 95: The method of embodiment 93 or embodiment 94, wherein the surface having a reflective, high diffusivity coating has a surface roughness equal to one or two wavelengths of light from one or more light sources used to irradiate the wafer.

[0378] Embodiment 96: A method comprising: a) placing a wafer on a wafer support surface of a base in a processing chamber; b) cooling the wafer to a temperature within a first temperature range, wherein the wafer is supported by the wafer support surface; c) flowing a first set of one or more processing gases through a plurality of outlets of a gas distribution system and through the wafer, wherein the temperature of the wafer is within the first temperature range to perform a dry development process; d) moving the wafer from a first chamber to a second chamber through a channel, the second chamber being connected to the first chamber through the channel; and e) irradiating the wafer with one or more light sources after (c) and while the wafer is passing through the channel or in the second chamber to heat the wafer to a temperature within a second temperature range, wherein the lower limit is higher than the upper limit of the first temperature range.

[0379] Embodiment 97: The method of embodiment 96, wherein: the channel includes a valve mechanism configured to close the channel in a first configuration, and the one or more light sources are located near the side of the valve mechanism closest to the base.

[0380] Embodiment 98: The method of Embodiment 96, wherein: the channel includes a valve mechanism configured to close the channel in a first configuration, and the one or more light sources are located near the side of the valve mechanism furthest from the base.

[0381] Embodiment 99: The method of embodiment 96, wherein: the channel includes a valve mechanism configured to close the channel in a first configuration, the one or more light sources are multiple light sources, and the one or more light sources include a first group of one or more light sources and a second group of one or more light sources, the first group of light sources is configured such that the valve mechanism is located between the first group of light sources and the base, and the second group of light sources is configured to be horizontally located between the valve mechanism and the base.

[0382] Embodiment 100: The method of any one of Embodiments 97 to 99, wherein the one or more light sources are configured to generate at least an elongated irradiation region when powered, the irradiation region having at least a width D in a direction perpendicular to the first path and located on a reference plane, wherein D is the diameter of the wafer.

[0383] Embodiment 101: The method of any one of Embodiments 97 to 100, wherein the second chamber is a vacuum transfer module having one or more wafer handling robots.

[0384] Embodiment 102: The method of Embodiment 101 further includes activating the discharge system to maintain the pressure in the first chamber lower than the pressure in the second chamber during at least a portion of (d) and (e).

[0385] Embodiment 103: The method of Embodiment 101 or Embodiment 102 further includes irradiating the wafer with one or more light sources when the wafer is moved from the second chamber to the first chamber before (a) to heat the wafer to a temperature in a third temperature range where the lower limit is higher than the upper limit of the first temperature range.

[0386] Implementation 104: The method of Implementation 102 further includes: f) irradiating the wafer with one or more light sources when the wafer is moved from the second chamber into the first chamber before (a) to heat the wafer to a temperature in a third temperature range with a lower limit higher than the upper limit of the first temperature range, and g) activating a discharge system or the discharge system during at least a portion of (f) to maintain the pressure in the first chamber lower than the pressure in the second chamber.

[0387] Embodiment 105: The method of embodiment 96, wherein: the second chamber has an internal volume greater than the cylindrical reference volume of diameter D, where D is the diameter of the wafer, and the one or more light sources are arranged in the second chamber and illuminate a circular area of ​​diameter D in the first reference plane.

[0388] Embodiment 106: The method of Embodiment 105 further includes a transfer module, which includes one or more wafer handling robots, wherein a second chamber is located between the first chamber and the transfer module.

[0389] Embodiment 107: The apparatus of embodiment 105 or 106 further includes irradiating the wafer with one or more light sources before the wafer is moved into the first chamber and while it is in the second chamber before (a) to heat the wafer to a temperature in a third temperature range where the lower limit is higher than the upper limit of the first temperature range.

[0390] Embodiment 108: The method of Embodiment 96, wherein at least one of the one or more light sources is configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm, light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light mainly in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0391] Embodiment 109: The method of Embodiment 96, wherein at least one of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0392] Embodiment 109: The method of Embodiment 96, wherein at least one of the one or more light sources is configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0393] Example 111: The method of embodiment 96, wherein there are multiple light sources, and at least most of the light sources are configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm, light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light mainly in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0394] Example 112: The method of embodiment 96, wherein there are multiple light sources, and at least most of the light sources are configured to emit light mainly in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0395] Example 113: The method of embodiment 96, wherein there are multiple light sources, and at least most of the light sources are configured to emit light mainly in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0396] Embodiment 114: The method of Embodiment 96, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0397] Embodiment 115: The method of Embodiment 96, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

[0398] Embodiment 116: The method of Embodiment 96, wherein each of the one or more light sources is configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

[0399] Embodiment 117: The method of Embodiment 96, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

[0400] Embodiment 118: The method of any one of Embodiments 108 to 117, wherein at least one of the one or more light sources is an infrared incandescent lamp, an infrared light-emitting diode, or a blue light-emitting diode. [Simplified Explanation of the Diagram]

[0127] Refer to the following diagram in the following discussion; the diagram is not intended to limit the scope, but is provided only for the convenience of the following discussion.

[0128] Figure 1 illustrates an example apparatus including a processing chamber, which can be used to perform a dry development process on a semiconductor wafer on which a metal photoresist is deposited.

[0129] Figure 2 shows a device with components similar to those in device 100.

[0130] Figure 3 shows the device in Figure 1 under different usage configurations.

[0131] Figure 4 shows an example device 400 with a structure similar to that of Figure 1, except that one or more light sources are located inside the processing chamber rather than outside the processing chamber.

[0132] Figure 5 shows an example device similar to Figure 4, except that the one or more light sources have been replaced by a plurality of light sources distributed on the underside of the panel of the spray head.

[0133] Figure 6 shows a detailed view of the area surrounding the sprinkler head in Figure 5.

[0134] Figure 7 shows another device similar to Figure 5, except that one or more light sources are arranged in the processing chamber to form several circular arrays centered on the spray head.

[0135] Figure 8 shows a detailed view of a portion of the light source within the dashed rectangle shown in Figure 7.

[0136] Figure 9 illustrates an example device including a processing chamber, which has one or more light sources disposed in a channel connecting the processing chamber and a second adjacent chamber.

[0137] Figure 10 illustrates an example device including a processing chamber connected via a channel to an adjacent chamber having one or more light sources that can be used to provide radiative heating to the wafer contained therein.

[0138] Figure 11 shows a flowchart of a technique for performing a dry development process followed by a dry development and baking operation.

[0139] Figure 12 shows a flowchart of another technique for performing a dry development process followed by a dry development and baking operation.

[0140] Figure 13 shows a flowchart of another technique for performing a dry development process followed by a dry development and baking operation.

[0141] Figure 14 shows a flowchart of another technique for performing a dry development process followed by a dry development and baking operation.

[0142] Figure 15 shows a flowchart of another technique for performing a dry development process followed by a dry development and baking operation.

[0143] Figure 16 shows a flowchart of an exemplary cleaning procedure.

[0144] The above figures are provided to facilitate understanding of the concepts discussed in this invention and to illustrate some embodiments that fall within the scope of this invention, but are not intended to be limiting—implementations that conform to this invention but are not drawn in the figures are still considered to be within the scope of this invention.

Claims

1. An apparatus for dry development, comprising: a processing chamber; a base located within the processing chamber and having a wafer support surface configured to support the wafer during dry development of a wafer within the processing chamber; a base cooling system configured to cool at least the wafer support surface of the base; one or more light sources configured to direct light into the processing chamber and at a location on or above the base; a gas distribution system having one or more inlets and a plurality of outlets configured to direct gas flowing therethrough from the outlets into a region above the wafer support surface of the base; and a controller configured to: a) determine that a wafer within the processing chamber is ready for a dry development process; b) when the wafer is supported by the wafer support surface, cause the base cooling system to cool the wafer to a temperature within a first temperature range; c) When the temperature of the wafer is within the first temperature range, the gas distribution system causes a first group of one or more processing gases to flow through the plurality of outlets and through the wafer to perform the dry development process, and d) after (c), the one or more light sources irradiate the wafer to heat the wafer to a temperature within a second temperature range, the lower limit of the second temperature range being higher than the upper limit of the first temperature range.

2. The device as claimed in claim 1, wherein at least one of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or light primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

3. The device as claimed in claim 1, wherein at least one of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

4. The device as claimed in claim 1, wherein at least one of the one or more light sources is configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

5. The device as claimed in claim 1, wherein there are a plurality of light sources, and at least most of such light sources are configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

6. The device as claimed in claim 1, wherein there are a plurality of light sources, and at least most of such light sources are configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

7. The apparatus as claimed in claim 1, wherein there are a plurality of light sources, and at least most of such light sources are configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

8. The apparatus of claim 1, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm, primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm, or primarily in the blue and infrared spectra with wavelengths between 400 nm and 490 nm and between 800 nm and 1300 nm, respectively.

9. The device as claimed in claim 1, wherein each of the one or more light sources is configured to emit light primarily in the blue spectrum with wavelengths between 400 nm and 490 nm.

10. The apparatus of claim 1, wherein each of the one or more light sources is configured to emit light primarily in the infrared spectrum with wavelengths between 800 nm and 1300 nm.

11. The device as claimed in any one of claims 1 to 10, wherein at least one of the one or more light sources is an infrared incandescent lamp, an infrared light-emitting diode, or a blue light-emitting diode.

12. The device as claimed in any one of claims 1 to 10, wherein the one or more light sources comprise a plurality of light-emitting diodes (LEDs) distributed throughout the circular or annular region.

13. The apparatus as claimed in any one of claims 1 to 10, further comprising one or more windows, each window being disposed between one or more of the light sources and the wafer support surface, wherein: each of the one or more windows has a region that is transparent to light having at least one or more wavelengths in a range or a plurality of ranges between 400 nm and 490 nm, between 800 nm and 1300 nm.

14. The device as claimed in claim 13, wherein the one or more windows comprise alumina or silicon oxide.

15. The apparatus of any one of claims 1 to 10, wherein: the gas distribution system includes a spray head extending above and perpendicularly away from the wafer support surface, and at least some of the outlets being distributed on a first portion of a panel of the spray head and extending through the first portion of the panel of the spray head, the panel having a first surface facing the wafer support surface.

16. The device as claimed in claim 15, wherein: the one or more light sources comprise a plurality of light-emitting diodes (LEDs), and the LEDs of the plurality of LEDs are distributed on a second portion of one of the panels.

17. The device as claimed in claim 16, wherein the LEDs of the plurality of LEDs are distributed between the outlets and located within the second portion of the panel.

18. The device as claimed in claim 16, wherein the first portion and the second portion are both circular, annular, or radially symmetrical in shape and centered on each other.

19. The apparatus of claim 15, wherein: the spray head is disposed between the wafer support surface and at least some of the one or more light sources, and the spray head has a region that is at least partially transparent to light having a wavelength or a plurality of wavelengths in a range or a plurality of ranges between 400 nm and 490 nm, between 800 nm and 1300 nm, or between 400 nm and 490 nm and between 800 nm and 1300 nm.

20. The device as claimed in claim 15, wherein: the spray head includes a panel having the outlets distributed thereon, and at least the panel of the spray head is made of a material including silicon oxide or aluminum oxide.

21. The apparatus as claimed in any one of claims 1 to 10, further comprising one or more windows, each window being disposed between one or more of the light sources and the wafer support surface, wherein: the one or more windows close corresponding one or more apertures of the processing chamber, and the one or more light sources are located outside the processing chamber and configured to emit light through the one or more windows into the processing chamber.

22. The apparatus as claimed in any one of claims 1 to 10, further comprising one or more windows, each window being disposed between one or more of the light sources and the wafer support surface, wherein the one or more light sources are light-emitting diodes located within the processing chamber, and at least some of the one or more windows are also located within the processing chamber.

23. The device as claimed in any one of claims 1 to 10, further comprising a pyrometer configured to obtain a temperature measurement of the wafer at least during period (d), wherein the controller is further configured to: monitor the temperature of the wafer using the pyrometer, and adjust the intensity level of one or more light sources based on the temperature of the wafer to keep the temperature of the wafer below 200°C.

24. The device as described in any one of claims 1 to 10, wherein the controller is further configured to: (e) allow an inert gas to flow through the gas distribution system and its outlets after (c), and perform (d) after or during (e).

25. The apparatus as claimed in claim 24, wherein the inert gas comprises argon, nitrogen, xenon, helium, krypton, or any combination of two or more thereof.

26. The apparatus as claimed in any one of claims 1 to 10, further comprising a discharge system connected to the processing chamber, wherein the controller is further configured to: discharge gas from the processing chamber through the discharge system during at least a portion of (e), and perform (d) after the remaining molar density of the first group of one or more process gases in the processing chamber has decreased to 10% or less of the molar density of the first group of one or more process gases in the processing chamber during the steady-state gas flow that occurs during (c).

27. The apparatus as claimed in any one of claims 1 to 10, wherein the controller is configured to irradiate the wafer with one or more light sources prior to (b) to heat the wafer to a temperature within a third temperature range.

28. The apparatus as claimed in any one of claims 1 to 10, further comprising a lifting pin mechanism having a plurality of lifting pins, wherein: the lifting pin mechanism is configured such that the lifting pins are controllably movable relative to the base between a first position and a second position, each lifting pin not extending upward beyond the wafer support surface at the first position, each lifting pin extending upward beyond the wafer support surface at the second position, and wherein, The controller is configured to place the lifting pins of the lifting pin mechanism in the first position during at least a portion of both (b) and (c).

29. The device as claimed in claim 28, wherein the controller is configured to place the lifting pins of the lifting pin mechanism in the second position during at least a portion of (d).

30. The device as claimed in claim 28, wherein the controller is configured to: irradiate the wafer with one or more light sources before (b) to heat the wafer to a temperature within a third temperature range, and to place the lifting pins of the lifting pin mechanism in the second position during at least a portion of the irradiation of the wafer before (b).

31. The apparatus of any one of claims 1 to 10, wherein the controller is configured to: receive an instruction to perform a chamber cleaning operation; place a cleaning wafer in the processing chamber, wherein the cleaning wafer has a reflective, high-diffusivity coating on a surface thereof; irradiate the surface of the cleaning wafer having the reflective, high-diffusivity coating with one or more light sources for a first time period; and remove the cleaning wafer from the processing chamber after the first time period.

32. The device as claimed in claim 31, wherein the reflective, high-diffusivity coating is made of tin, tellurium, or hafnium.

33. The device as claimed in claim 31, wherein the surface having the reflective, high-diffusivity coating has a surface roughness equal to one or two wavelengths of light irradiating the wafer from the one or more light sources.

34. The apparatus as described in claim 33, further comprising the cleaned wafer.

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