Gas injection device, apparatus for processing substrate and method for depositing thin film

Abstract

What is provided is a gas jetting apparatus, an apparatus for processing a substrate, and a method for depositing a thin film, particularly a gas jetting apparatus for jetting gas onto a substrate to deposit a thin film, an apparatus for processing a substrate, and a method for depositing a thin film. According to an exemplary embodiment, the gas jetting apparatus includes a first plate provided with a first gas supply path and a second gas supply path that are separated from each other and have a first gas supply hole and a second gas supply hole respectively connected to the first gas supply path and the second gas supply path, and a second plate separated from the first plate and having a plurality of openings alternately arranged with the first gas supply hole and the second gas supply hole.

Description

Technical Field

[0001] The present invention relates to a gas injection device, an apparatus for processing a substrate, and a method for depositing a thin film, in particular to a gas injection device for injecting gas onto a substrate to deposit a thin film, an apparatus for processing a substrate, and a method for depositing a thin film. Prior Art

[0002] Generally, semiconductor devices or display devices are manufactured by depositing various materials in thin film shapes on a substrate and patterning the deposited thin films. To this end, multiple stages of different processes such as deposition, etching, cleaning, and drying are performed.

[0003] Here, a deposition process is performed on a substrate to form a thin film having the properties required for a semiconductor device or display device. Such a deposition process is typically performed using an apparatus for processing the substrate. In the apparatus, a process gas is injected using a gas injection device having multiple injection holes formed therein, thereby forming the thin film on the substrate through a chemical reaction.

[0004] As mentioned above, when forming thin films on substrates using a gas injection device with multiple injection holes, ensuring deposition uniformity is a crucial issue. Consequently, there is a growing demand for gas injection devices with improved opening structures that enable uniform thin film deposition.

[0005] Prior art document: Korean Patent KR 10-2004-0104197 A. Summary of the Invention

[0006] The present invention provides a gas injection device capable of depositing a uniform thin film, an apparatus for processing a substrate, and a method for depositing a thin film.

[0007] According to an exemplary embodiment, a gas injection device includes: a first plate in which a first gas supply path and a second gas supply path are provided separately from each other and having a first gas supply hole and a second gas supply hole connected to the first gas supply path and the second gas supply path, respectively; and a second plate separated from the first plate and having a plurality of openings arranged alternately with the first gas supply hole and the second gas supply hole.

[0008] The second plate may be disposed to be separated from the first plate by an interval of 1 mm to 3 mm.

[0009] The opening may include: a first opening defined on one side of the first plate; and a second opening connected to the first opening and having a larger diameter than the first opening.

[0010] The first opening may have a diameter of 1 mm to 3 mm.

[0011] The second opening may have a diameter of 10 mm to 14 mm.

[0012] The opening may further include a third opening between the first opening and the second opening to connect the first opening to the second opening.

[0013] The third opening may have a shape in which a cross-section gradually increases toward the second opening.

[0014] The second opening may have a length of 25 mm to 75 mm.

[0015] The second plate may have a thickness of 35 mm to 100 mm.

[0016] The openings may be arranged at intervals of 12 mm to 20 mm.

[0017] The first opening and the second opening may have different lengths from each other.

[0018] The first opening may have a greater length than the second opening.

[0019] The second opening may have a greater length than the first opening.

[0020] According to another exemplary embodiment, an apparatus for processing a substrate includes: a chamber; a substrate support device installed in the chamber to support the substrate; a gas injection device as described above installed in the chamber to inject gas into the substrate support device; and a power supply device connected to the gas injection device to supply power to the gas injection device.

[0021] The first board and the second board can be electrically insulated from each other, and the power supply device can be connected to the second board to supply power to the second board.

[0022] The power supply device can be used to supply power to the first board and the second board.

[0023] According to yet another exemplary embodiment, a method for depositing a thin film using the above-mentioned gas injection device is provided, wherein a first gas is supplied through a first gas supply path, and a second gas is supplied through a second gas supply path to deposit the thin film on a substrate.

[0024] At least one of the first gas or the second gas may be supplied by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method to deposit a thin film on the substrate.

[0025] The thin film may include at least one of an IZO thin film in which indium (In) is doped into zinc oxide (ZnO), a GZO thin film in which gallium (Ga) is doped into zinc oxide (ZnO), an IGZO thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO), a film with a high dielectric constant (High-K), a silicon dioxide (SiO 2) thin film, or a silicon nitride (SiN) thin film. Simple diagram description

[0026] The exemplary embodiments can be understood in more detail through the following description and the accompanying drawings, in which:

[0027] FIG. 1 is a schematic diagram of an apparatus for processing a substrate according to an exemplary embodiment.

[0028] FIG. 2 is a diagram illustrating an arrangement structure of openings in a gas injection device according to an exemplary embodiment.

[0029] FIG. 3 is a diagram illustrating a process of forming supply holes and openings in a gas injection device according to an exemplary embodiment. Implementation Method

[0030] Below, exemplary embodiments will be described in detail with reference to the accompanying drawings. However, the present invention may be embodied in various forms and should not be limited to the exemplary embodiments described herein. Rather, these embodiments are provided to provide a thorough and complete understanding of the present invention and to fully convey the scope of the invention to those skilled in the art.

[0031] It will be understood that when a layer, film, region, or substrate is referred to as being "on" another, it can be directly on the other, or one or more intervening layers, films, regions, or substrates may also be present.

[0032] Furthermore, as shown in the drawings, spatially relative terms such as "above" or "upper" and "below" or "lower" may be used herein to easily describe the relationship of one element or feature to another. It will be understood that these terms are intended to encompass different orientations of the device in use or orientations other than those depicted in the drawings. In the drawings, the dimensions of layers and regions may be exaggerated for clarity. Like reference numerals represent like elements throughout.

[0033] FIG1 is a schematic diagram of an apparatus for processing a substrate according to an exemplary embodiment. FIG2 is a diagram illustrating an arrangement of openings in a gas injection device according to an exemplary embodiment, and FIG3 is a diagram illustrating a process for forming supply holes and openings in the gas injection device according to an exemplary embodiment.

[0034] 1 to 3 , an apparatus for processing a substrate according to an exemplary embodiment includes a chamber 10, a substrate support device 20 provided in and installed in the chamber 10 to support a substrate S provided in the chamber 10, a gas injection device 300 installed in the chamber 10 to inject gas into the substrate support device 20, and a power supply device 400 connected to the gas injection device 300 to supply power for generating plasma in the chamber to the gas injection device 300. Furthermore, the apparatus for processing a substrate may further include a control device (not shown) for controlling the power supply device 400.

[0035] The chamber 10 provides a predetermined reaction space and is maintained to seal the reaction space. The chamber 10 may include a body 14 having a generally circular or square planar portion and sidewalls extending upward from the planar portion and defining the predetermined reaction space, and a generally circular or square cover 12 disposed on the body 14 to seal the reaction space. However, the chamber 10 is not limited thereto and may be manufactured in various shapes corresponding to the shape of the substrate S.

[0036] A drain portion (not shown) can be provided on a predetermined area of ​​the bottom surface of the chamber 10, and a drain pipe (not shown) connected to the drain portion can be provided outside the chamber 10. Furthermore, the drain pipe can be connected to a drain device (not shown). A vacuum pump, such as a turbomolecular pump, can be used as the drain device. Thus, for example, the interior of the chamber can be evacuated to a predetermined pressure, such as 0.1 mTorr or less, by the drain device under a predetermined reduced pressure atmosphere. The drain pipe can be installed not only on the bottom surface of the chamber 10 but also on the side of the chamber 10 below the substrate support device 20, as will be described later. Furthermore, multiple drain pipes and corresponding drain devices can be installed to reduce drain time.

[0037] A substrate S supplied to the chamber 10 may be seated on the substrate support device 20 for performing a substrate processing process, such as a thin film deposition process. As described above, the substrate support device 20 may include an electrostatic chuck, and utilizes electrostatic force to attract and hold the substrate S, thereby allowing the substrate S to be seated and supported. Alternatively, the substrate support device 20 may support the substrate S through vacuum suction or mechanical force.

[0038] The substrate support device 20 can be provided in a shape corresponding to the shape of the substrate S, such as a circular or rectangular shape. The substrate support device 20 may include a substrate support 22 on which the substrate S is seated, and an elevator 24 disposed below the substrate support 22 to elevate the substrate support 22. The substrate support 22 may be made larger than the substrate S, and the elevator 24 may be provided to support at least one region of the substrate support 22, such as the central portion. When the substrate S is seated on the substrate support 22, the substrate support 22 can be moved to approach the gas injection device 300. Furthermore, a heater (not shown) may be installed in the substrate support 22. The heater generates heat to a predetermined temperature to heat the substrate support 22 and the substrate S seated thereon, thereby uniformly depositing a thin film on the substrate S.

[0039] The gas supply device can be installed in the lid 12 of the chamber 10. The gas supply device can be installed so as to pass through the lid 12 of the chamber 10 and can include a first gas supply unit 110 and a second gas supply unit 120 for respectively supplying a first gas and a second gas to the gas injection device 300. Here, the first gas can include a source gas, and the second gas can include a reactant gas. However, the first gas and the second gas are not limited to this. The first gas can include a reactant gas, the second gas can include a source gas, or at least one of the first gas and the second gas can include a mixed gas of a source gas and a reactant gas. Furthermore, at least one of the first gas and the second gas can be a purge gas. That is, each of the first gas supply unit and the second gas supply unit may not necessarily provide a single gas. For example, each of the first gas supply unit and the second gas supply unit can be used to simultaneously supply multiple gases or a single gas selected from these gases.

[0040] The gas injection device 300 is installed inside the chamber 10, for example, on the bottom surface of the cover 12, and a first gas supply path for injecting a first gas and supplying the first gas to the substrate and a second gas supply path for injecting a second gas and supplying the second gas to the substrate can be provided in the gas injection device 300. The first gas supply path and the second gas supply path can be provided to be independently separated from each other so that the first gas and the second gas are separated from each other in the gas injection device 300 without mixing with each other and then supplied to the substrate.

[0041] In more detail, the gas injection device 300 includes a first plate in which the first gas supply path and the second gas supply path are provided separately from each other and has first gas supply holes 312 and second gas supply holes 314 connected to the first gas supply path and the second gas supply path, respectively; and a second plate 330 that is separate from the first plate and has a plurality of openings 332 arranged alternately with the first gas supply holes 312 and the second gas supply holes 314.

[0042] The first plate may include an upper frame 310 and a lower frame 320. Here, the upper frame 310 is detachably coupled to the bottom surface of the lid 12. Simultaneously, a portion of the top surface of the upper frame 310, for example, the central portion of the top surface of the upper frame 310, is separated from the bottom surface of the lid 12 by a predetermined distance. Therefore, the first gas supplied from the first gas supply unit can diffuse into the space between the top surface of the upper frame 310 and the bottom surface of the lid 12. Furthermore, the lower frame 320 is mounted so as to be separated from the bottom surface of the upper frame 310 by a predetermined distance. Therefore, the second gas supplied from the second gas supply unit 120 can diffuse into the space between the top surface of the lower frame 320 and the bottom surface of the upper frame 310. The upper frame 310 and the lower frame 320 may be connected to each other along their outer peripheral surfaces to provide a space therebetween. They may be integrally formed and may have a structure in which the outer peripheral surfaces are sealed by a first sealing member 350. Here, the first sealing member 350 may be made of an insulating material to electrically insulate the upper frame 310 from the lower frame 320 , or conversely, the first sealing member 350 may be made of a conductive material to electrically connect the upper frame 310 to the lower frame 320 .

[0043] In the first gas supply path, the first gas supplied from the first gas supply part 110 can diffuse into the space between the bottom surface of the cover body 12 and the upper frame 310, pass through the upper frame 310 and the lower frame 320, and then be supplied into the chamber 10. Here, the first gas supply hole 312 can be connected to the first gas supply path and can be defined to pass through the upper frame 310 and the lower frame 320 to isolate the lower portion of the space between the top surface of the upper frame 310 and the bottom surface of the cover body 12 from the space between the top surface of the lower frame 320 and the bottom surface of the upper frame 310.

[0044] Furthermore, in the second gas supply path, the second gas supplied from the second gas supply part 120 may diffuse in the space between the bottom surface of the upper frame 310 and the top surface of the lower frame 320 to pass through the lower frame 320 and then be supplied into the chamber 10. Here, the second gas supply hole 322 may be defined as being connected to the second gas supply path and may be defined as passing through the lower frame 320 at the lower portion of the space between the upper frame 310 and the bottom surface.

[0045] Therefore, the first gas supply path and the second gas supply path may not be communicated with each other, and the first gas and the second gas may be individually supplied from the gas supply device to the lower side via the first plate.

[0046] The second plate 330 can be installed separately from the underside of the lower frame 320. Specifically, the second plate 330 is installed at a predetermined distance D1 from the bottom surface of the lower frame 320. Therefore, the first and second gases supplied downward via the first plate can diffuse into the space between the top surface of the second plate 330 and the bottom surface of the lower frame 320. The lower frame 320 and the second plate 330 can be connected along their outer circumferential surfaces and integrally formed to provide a separate space therebetween, but can be sealed by the outer circumferential surface of the second sealing member 360. The second sealing member 360 can be made of an insulating material to electrically insulate the lower frame 320, or conversely, it can be made of a conductive material to electrically connect the lower frame 320 to the second plate 330.

[0047] Here, the second plate 330 can be installed downwardly spaced apart from the first plate by a distance, wherein a plasma sheath region defined on the surface of the first plate (i.e., the bottom surface of the lower frame 320) and a plasma sheath region defined on the surface of the second plate 330 (i.e., the top surface of the second plate 330) overlap with each other at this distance. Here, the plasma sheath region refers to a dark field area between the plasma and the surface of the structure where positive (+) ions concentrate to exchange energy, but plasma is hardly generated.

[0048] If the plasma sheath region defined on the bottom surface of the lower frame 320 and the plasma sheath region defined on the top surface of the second plate 330 do not overlap, plasma can be generated between the plasma sheath regions. However, in this embodiment, because the lower frame 320 and the second plate 330 are separated by a distance such that the plasma sheath region defined on the bottom surface of the lower frame 320 and the plasma sheath region defined on the top surface of the second plate 330 overlap, plasma can be prevented from being generated between the bottom surface of the lower frame 320 and the top surface of the second plate 330.

[0049] As described above, because the first and second gases supplied downward through the first plate inevitably diffuse into the space between the bottom surface of the lower frame 320 and the top surface of the second plate 330, the bottom surface of the lower frame 320 and the top surface of the second plate 330 need to be separated from each other to ensure smooth gas flow. Therefore, the second plate 330 can be separated from the first plate by a distance of 1 to 3 mm. When the second plate 330 is separated from the first plate by a distance of less than 1 mm, the gases can flow smoothly between the bottom surface of the lower frame 320 and the top surface of the second plate 330. However, when the second plate 330 is separated from the first plate by a distance of more than 3 mm, plasma may be generated in the space between the bottom surface of the lower frame 320 and the top surface of the second plate 330, generating particles and causing process defects.

[0050] Furthermore, the second plate 330 has a plurality of openings 332 arranged alternately with the first and second gas supply holes 312, 322, as described above. That is, as shown in FIG2 , when viewing the first and second plates 330 from the top or bottom, the openings 332 can be defined in the second plate 330 so as not to overlap with either the first or second gas supply holes 312, 322. When viewing the first and second plates 330 from the top or bottom, the openings 332 can be defined between the first and second gas supply holes 312, 322 along at least one direction. Furthermore, the openings 332 can be defined as being centrally located between the first and second gas supply holes 312, 322 along at least one direction.

[0051] If the openings 332 are positioned to overlap the first and second gas supply holes 312 and 314, most of the gas supplied from the first and second gas supply holes 312 and 314 can be ejected through the openings defined to overlap the first and second gas supply holes 312 and 314. However, not all of the gas ejected downward through the openings 332 is actually ejected, and some of the gas may not be ejected directly into the openings 332 but may flow into the space between the bottom surface of the lower frame 320 and the top surface of the second plate 330 and stagnate there. Because stagnant gas hinders the smooth flow of gas to generate particles, in this embodiment, the openings 332 may be defined in the second plate 330 to alternate with the first and second gas supply holes 312 and 322.

[0052] As shown in FIG3 , the openings 332 may include a first opening 333 defined on one side of the first plate, and a second opening 335 connected to the first opening 333 and having a larger diameter than the first opening 333. Specifically, each opening 332 may include a first opening 333 defined at a predetermined length H1 from the top surface of the second plate 330, and a second opening defined at a predetermined length H2 from the bottom surface of the second plate 330. Here, the first opening 333 serves as a gas inlet, allowing gas diffused in the space between the bottom surface of the lower frame 320 and the top surface of the second plate 330 to be introduced into the opening 332 through the first opening 333. Meanwhile, the second opening 335 serves as a gas outlet, allowing gas introduced into the opening 332 to be ejected through the second opening 335 onto the underside of the second plate 330. The first openings 333 may be arranged alternately with the first gas supply holes 312 and the second gas supply holes 322, and the second openings 335 may extend to the bottom side of the first openings 333 to have a larger diameter than the first openings 333. Each opening 332 may further include a third opening 334 between the first opening 333 and the second opening 335, connecting the first opening 333 to the second opening 335.

[0053] The first openings 333 contain gas that diffuses between the bottom surface of the lower frame 320 and the top surface of the second plate 330 and reaches the lower second openings 335. As described above, the first openings 333 have a diameter D2 selected to uniformly introduce the gas diffused between the bottom surface of the lower frame 320 and the top surface of the second plate 330 into each second opening 335. Here, the first openings 333 may have a diameter D2 that defines a plasma sheath region. That is, within the first openings 333, the plasma sheath region defined on the inner surface of the second plate 330 that defines the first openings 333 completely overlaps, thereby defining a plasma sheath where little plasma is generated. To this end, the first openings 333 may have a diameter D2 of 1 mm to 3 mm. When the diameter D2 of the first openings 333 is less than 1 mm, gas may not flow smoothly through the first openings 333. When the diameter D2 exceeds 3 mm, plasma may be generated in the first openings 333, causing blockage due to particles. As described above, the first opening 333 may be defined to have a length H1 of 10 mm to 25 mm from the top surface of the second plate 330 .

[0054] The third opening 334 is used to smoothly transfer the gas supplied from the lower side of the first opening 333 through the first opening 333 to the second opening 335. The third opening 334 may have a shape with a cross-section that increases from the lower end of the first opening 333 to the upper end of the second opening 335. Therefore, the gas supplied through the first opening 333 can be introduced through the third opening 334 without stagnation and then smoothly transferred to the second opening 335. However, the third opening 334 is not essential, and if the third opening 334 is omitted, the second opening 335 can be directly connected to the lower side of the first opening 333.

[0055] The second opening 335 is connected to the lower side of the first opening 333 or the lower side of the third opening 334. The second opening 335 generates plasma through the hollow cathode effect, which vibrates electrons in a cylindrical electrode. Specifically, the second opening 335 provides a large surface area to facilitate the introduction of plasma ionization of gas into the second opening 335, thereby generating high-density plasma.

[0056] The second openings 335 can have a diameter D3 of 10 to 14 mm. If the diameter D3 of the second openings 335 is less than 10 mm, the hollow cathode effect is difficult to produce, and therefore, high-density plasma cannot be generated. Furthermore, when the diameter D3 of the second openings 335 exceeds 14 mm, the spacing between the second openings 335 can be increased to ensure uniform thin film deposition. When the distance between the second openings 335 increases, the gas ejected from each second opening 335 tends to concentrate at a predetermined location on the substrate S, resulting in non-uniform deposition. However, if the distance between the second openings 335 decreases, the gas ejected from each second opening 335 can overlap on the substrate S, resulting in more uniform thin film deposition. To ensure uniform thin film deposition on the substrate S, the second openings 335 can be arranged at intervals of 2 to 20 mm. When the diameter D3 of the second openings 335 is controlled to be less than 14 mm, the second openings 335 can be arranged at intervals of 12 to 20 mm to improve deposition uniformity.

[0057] The second opening 335 can have a length H2 of 25 to 75 mm. That is, the second opening 335 can be provided with a length H2 of 25 to 75 mm from the bottom surface of the second plate 330 upward. If the length H2 of the second opening 335 is less than 25 mm, a sufficient hollow cathode effect may not be generated. On the other hand, if the length H2 of the second opening 335 exceeds 75 mm, ions generated in the second opening 335 may collide with the inner surface of the second plate 330 defining the second opening 335, causing damage to the hole due to sputtering. Therefore, the second opening 335 can have a length H2 of 25 to 75 mm.

[0058] As described above, the first opening 333 may have a length H1 of 10 to 25 mm. Furthermore, the second opening 335 may have a length H2 of 25 to 75 mm. Therefore, the second plate 330 may be provided with a thickness of 35 to 100 mm. If the second plate 330 is provided with a thickness of less than 35 mm, the second plate 330 may sag due to its weight. If the second plate 330 is provided with a thickness exceeding 100 mm, the weight may increase, and excessive space may be occupied in the cavity 10, degrading the structural efficiency. Therefore, the second plate 330 may be provided with a thickness of 35 to 100 mm.

[0059] The length H1 of the first opening 333 and the length H2 of the second opening 335 can be adjusted within the range of the thickness of the second plate 330. In other words, the length H1 of the opening 333 and the length H2 of the second opening 335 can be adjusted differently or the same.

[0060] For example, the length H1 of the first opening 333 can be longer than the length H2 of the second opening 335 to increase the density of the plasma within a set thickness range of the second plate 330. If the thickness of the second plate 330 is set to 35 mm to 100 mm and the length H2 of the second opening 335 is set to 25 mm, the length H1 of the first opening 333 can be set to be greater than 25 mm and less than or equal to 75 mm to increase the density of the plasma.

[0061] Furthermore, to reduce the plasma density within a predetermined thickness range of the second plate 330, the length H1 of the first opening 333 can be smaller than the length H2 of the second opening 335. In other words, the length H2 of the second opening 335 can be greater than the length H1 of the first opening 333. If the thickness of the second plate 330 is set to between 35 mm and 100 mm and the length H2 of the second opening 335 is set to 25 mm, the length H1 of the first opening 333 can be set to be greater than 10 mm and less than 25 mm to reduce the plasma density.

[0062] The length H1 of the first opening 333 and the length H2 of the second opening 335 may be provided to be the same. As described above, the length H1 of the first opening 333 and the length H2 of the second opening 335 may be provided to be different from each other or the same as each other so that the plasma is adjusted to a desired density.

[0063] The power supply device 400 may be connected to the gas injection device 300 to supply power for generating plasma in the chamber 10 to the gas injection device 300. That is, the power supply device 400 may supply radio frequency power (RF power) for generating plasma in the chamber 10.

[0064] Here, the power supply device 400 can be connected to the second plate 330 to supply RF power only to the second plate 330, and the first plate can be grounded. Here, the first and second plates 330 can be insulated by a second sealant 360 made of an insulating material. As described above, when the power supply device 400 supplies RF power to the second plate 330 and the first plate is grounded, each of the first and second plates 330 serves as an electrode for generating capacitively coupled plasma (CCP). Furthermore, because the substrate support 22 can also be grounded, capacitively coupled plasma can be generated between the second plate 330 and the substrate support 22.

[0065] Alternatively, the power supply device 400 may also supply power to both the first and second plates 330. In this case, the second sealing member 360 may be made of a conductive material to enable the power supply device 400 to supply RF power to either the first or second plate 330, or to both the first and second plates 330. In this case, the same RF power can be supplied to both the first and second plates 330. As described above, when the power supply device 400 supplies RF power to both the first and second plates 330, the plasma sheath area defined between the first and second plates 330 is reduced compared to when the first plate is grounded. Consequently, a relatively high-density capacitively coupled plasma can be generated between the plates and the grounded substrate support 22.

[0066] As described above, when using the apparatus for processing a substrate, a thin film can be deposited on the substrate S using a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. Here, the thin film deposited using the CVD method or the ALD method can include at least one of an IZO thin film in which indium (In) is doped into zinc oxide (ZnO), a GZO thin film in which gallium (Ga) is doped into zinc oxide (ZnO), an IGZO thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO), a thin film having a high dielectric constant (High-K), a silicon dioxide (SiO 2) thin film, or a silicon nitride (SiN) thin film.

[0067] First, when depositing a thin film on a substrate S via chemical vapor deposition, source gases and reactive gases can be supplied simultaneously onto the substrate S. Here, the first gas can include a source gas, and the second gas can include a reactive gas. However, the first and second gases are not limited to this. The first gas can include a reactive gas, and the second gas can include a source gas, or at least one of the first and second gases can include a mixed gas of a source gas and a reactive gas. Furthermore, at least one of the first and second gases can be a purge gas. Here, the power supply device 400 can supply RF power to the gas injection device 300 to generate plasma in the chamber 10, thereby improving deposition efficiency.

[0068] When depositing a thin film on a substrate S using an atomic layer deposition method, source gases and reactive gases may be alternately supplied to the substrate S. Here, the first gas may include a source gas and the second gas may include a reactive gas, or the first gas may include a reactive gas and the second gas may include a source gas. Furthermore, at least one of the first and second gases may be a purge gas. Here, the processes of supplying the source gas, supplying the purge gas, supplying the reactive gas, and supplying the purge gas may form a process cycle, and this process cycle may be repeated multiple times to deposit a thin film on the substrate S. Here, the power supply device 400 may supply RF power to the gas injection device 300 to generate plasma in the chamber 10. Therefore, the process of supplying the reactive gas may be performed to improve deposition efficiency.

[0069] According to exemplary embodiments, the spacing between openings for injecting process gases can be minimized to improve deposition uniformity. Furthermore, high-density plasma can be generated by the hollow cathode effect, and thus, high-quality thin films can be formed.

[0070] According to example embodiments, intervals between openings through which process gases are injected may be minimized to improve deposition uniformity.

[0071] Furthermore, by utilizing the hollow cathode effect, high-density plasma can be generated, and thus high-quality thin films can be formed.

[0072] Although specific terms have been used to describe and illustrate specific embodiments, these terms are used only as examples to clearly explain the exemplary embodiments. Therefore, it is obvious to those skilled in the art that the exemplary embodiments and technical terms can be implemented in other specific forms and variations without changing the technical concept or essential features. Therefore, it should be understood that simple modifications of the exemplary embodiments according to the present invention can fall within the technical spirit of the present invention.

[0073] 10: Cavity 110: First gas supply unit 12: Cover 120: Second gas supply unit 14:Ontology 20: Substrate support device 22: substrate support 24: Lifting parts 300: Gas injection device 310: Upper frame 312: First gas supply hole 320: Lower frame 322: Second gas supply hole 330: Second board 332: Opening 333: First Opening 334: The third opening 335: Second opening 350: First seal 360: Second seal 400: Power supply device D 1: Preset distance D 2: diameter D 3: Diameter H 1: Preset length H 2: Preset length S:Substrate

Claims

1. A gas injection device comprising: a first plate, a first gas supply path and a second gas supply path provided in the first plate as separate from each other, the first plate having a first gas supply hole and a second gas supply hole respectively connected to the first gas supply path and the second gas supply path; and a second plate, separate from the first plate, having a plurality of openings alternately arranged to not overlap the first gas supply hole and the second gas supply hole in a vertical direction.

2. The gas injection device as described in claim 1, wherein, The second plate is configured to be separated from the first plate at intervals of 1 mm to 3 mm.

3. The gas injection device as described in claim 1, wherein, The openings include: a first opening defined on one side of the first plate; and a second opening connected to the first opening and having a larger diameter than the first opening.

4. The gas injection device as described in claim 3, wherein, The first opening has a diameter of 1 to 3 millimeters.

5. The gas injection device as described in claim 3, wherein, The second opening has a diameter of 10 mm to 14 mm.

6. The gas injection device as described in claim 3, wherein, These openings further include a third opening for connecting the first opening to the second opening between the first opening and the second opening.

7. The gas injection device as described in claim 6, wherein, The third opening has a shape in which the cross-section gradually increases toward the second opening.

8. The gas injection device as described in claim 3, wherein, The second opening has a length of 25 mm to 75 mm.

9. The gas injection device as claimed in claim 1, wherein, The second plate has a thickness of 35 mm to 100 mm.

10. The gas injection device as claimed in claim 1, wherein, These openings are arranged at intervals of 12 mm to 20 mm.

11. The gas injection device as described in claim 3, wherein, The first opening and the second opening have different lengths.

12. The gas injection device as claimed in claim 11, wherein, The first opening is longer than the second opening.

13. The gas injection device as described in claim 11, wherein, The second opening is longer than the first opening.

14. An apparatus for processing a substrate, comprising: a cavity; a substrate support device mounted in the cavity to support the substrate; a gas injection device as described in any one of claims 1 to 13, mounted in the cavity to inject a gas into the substrate support device; and a power supply device connected to the gas injection device to supply power to the gas injection device.

15. The apparatus for processing a substrate as described in claim 14, wherein, The first plate and the second plate are electrically insulated from each other, and the power supply device is connected to the second plate to supply power to the second plate.

16. The apparatus for processing a substrate as described in claim 14, wherein, The power supply device is used to supply power to the first board and the second board.

17. A method for depositing a thin film using a gas jetting apparatus as described in any one of claims 1 to 13, wherein, A first gas is supplied through the first gas supply path, and a second gas is supplied through the second gas supply path to deposit the thin film on the substrate.

18. The method for depositing a thin film as described in claim 17, wherein, The first gas or the second gas is supplied by chemical vapor deposition (CVD) or atomic layer deposition (ALD) to deposit the thin film on the substrate.

19. The method for depositing a thin film as described in claim 17, wherein, The thin film includes at least one of the following: an indium (In) doped in zinc oxide (ZnO) thin film, a gallium (Ga) doped in zinc oxide (ZnO) thin film, an indium (In) and a gallium (Ga) doped in zinc oxide (ZnO) thin film, a thin film with a high dielectric constant (High-K), a silicon dioxide (SiO2) thin film, or a silicon nitride (SiN) thin film.

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