Diagnostic substrate and plasma processing tool

TWI938513BActive Publication Date: 2026-09-11APPLIED MATERIALS INC
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Patent Information

Application Number
TW112134211
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2023-07-10
Filing Date
2023-09-08
Publication Date
2026-09-11
Estimated Expiration
2043-09-07

AI Technical Summary

Technical Problem

In the prior art, electromagnetic field interference in semiconductor manufacturing causes traditional wireless communication to be unable to be effectively carried out in the plasma processing chamber, limiting the realization of real-time data communication.

Method used

Using small amplitude modulation changes of the RF signal or the plasma itself as the data carrier, wireless communication is carried out in an electromagnetic interference environment through high-frequency signals, and data is transmitted using high-frequency modulation and switching of RF signals.

Benefits of technology

It realizes wireless real-time data transmission in a strong electromagnetic field environment, improves data analysis and processing efficiency, and avoids interference problems of traditional wireless communications.

✦ Generated by Eureka AI based on patent content.

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Abstract

The embodiments disclosed herein include a diagnostic substrate. In one embodiment, the diagnostic substrate includes: a substrate; and a sensor on the substrate. In one embodiment, the diagnostic substrate further includes: a communication module on the substrate, the communication module being communicatively coupled to the sensor. In one embodiment, the communication module includes: an output antenna; a switch coupled to the output antenna; and a signal source coupled to the switch.
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Description

Wireless data communication via voltage and current sensors and RF generators in plasma processing chambers This application claims the benefit of U.S. Provisional Application No. 63 / 412,278, filed on September 30, 2022, the entire contents of which are incorporated herein by reference. Embodiments relate to the field of semiconductor manufacturing, and more particularly, to wireless communication architectures for uploading and downloading information from sensors in semiconductor tools. Instrumented substrates have been developed to facilitate monitoring of processing conditions within a chamber. For example, an instrumented substrate may include temperature sensors, pressure sensors, electrical sensors (e.g., plasma condition sensors), and the like. In many cases, data collected by the instrumented substrate is stored in memory provided on the instrumented substrate. After processing, the instrumented substrate can be removed from the chamber, and the collected data can be downloaded to an external device for data processing, analysis, and the like. While real-time data communication between instrumented substrates and external devices is an advantageous solution, the strong electromagnetic fields present in chambers often induce radio interference and block wireless communication links. Embodiments disclosed herein include a diagnostic substrate. In one embodiment, the diagnostic substrate includes: a substrate; and a sensor disposed on the substrate. In one embodiment, the diagnostic substrate further includes: a communication module disposed on the substrate and communicatively coupled to the sensor. In one embodiment, the communication module includes: an output antenna; a switch coupled to the output antenna; and a signal source coupled to the switch. Embodiments disclosed herein may also include a diagnostic substrate comprising: a substrate; and a sensor disposed on the substrate. In one embodiment, the diagnostic substrate further comprises: a communication module disposed on the substrate and communicatively coupled to the sensor. In one embodiment, the communication module comprises: an input antenna configured to collect modulated data; a demodulator coupled to the input antenna; and a controller configured to control the sensor. Embodiments disclosed herein may also include a plasma processing tool. In one embodiment, the plasma processing tool includes: a chamber configured to contain a plasma; and an RF generator coupled to the chamber, wherein power from the RF generator is configured to couple into one or more gases in the chamber to form the plasma. The plasma processing tool further includes: a voltage-current (VI) sensor between the RF generator and the chamber; and a diagnostic substrate within the chamber. In one embodiment, the diagnostic substrate includes: a substrate; a sensor on the substrate; and a communication module coupled to the sensor, wherein the communication module is configured to wirelessly communicate with a device external to the chamber using a carrier signal at a carrier frequency that is an integer multiple of a frequency of the plasma. The system described herein includes a wireless communication architecture for uploading and downloading information from sensors in semiconductor tools. In the following description, numerous specific details are set forth to provide a thorough understanding of the embodiments. However, it will be apparent to those skilled in the art that the embodiments can be practiced without these specific details. In other instances, well-known aspects have not been described in detail to avoid unnecessarily obscuring the embodiments. Furthermore, it should be understood that the various embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale. As mentioned above, instrumented substrates are currently limited in their ability to communicate wirelessly with external devices. Therefore, instrumented substrates typically store data in onboard memory and retrieve the data from the memory after processing is complete and the instrumented substrate is removed from the plasma chamber. However, wireless communication is a superior data transfer mechanism and allows for real-time data analysis and processing. Unfortunately, the strong electromagnetic fields within a plasma chamber induce interference and can render traditional wireless communication protocols (e.g., WiFi, Bluetooth, etc.) unsuitable or inaccurate. Accordingly, embodiments disclosed herein include wireless communication solutions that use an RF signal used to induce plasma or (a small modulated variation of) the plasma itself as a carrier for a data signal to / from an instrumented substrate. In a first embodiment, data is downloaded wirelessly from the instrumented substrate. In such an embodiment, a signal source (e.g., a clock or signal multiplier) provides a signal having a frequency significantly different from the RF signal. For example, the signal can be an order of magnitude higher than the RF signal. The high-frequency signal is then modulated using a modulator and / or switch coupled to an output antenna. When the output antenna is switched on / off, the impedance changes. This impedance change can be detected by a capacitive or inductive RF pickup sensor connected to the RF feed line. The signal can then be demodulated to extract the data transmitted by the instrumented substrate. Embodiments may also allow data to be uploaded to the instrumented substrate. Data upload is accomplished by mixing high-frequency modulation into the RF generator. The high-frequency modulation can be at least an order of magnitude higher than the frequency of the RF signal. An input antenna on the instrumented substrate can be configured to receive the high-frequency modulation. A demodulator on the instrumented substrate can then be used to extract the data for use by a controller on the instrumented substrate. As used herein, an instrumented substrate may refer to a substrate that includes one or more sensors. The substrate may have a form factor of a typical substrate processed in a plasma chamber. For example, the substrate may have a wafer form factor (e.g., 150 mm, 200 mm, 300 mm, 450 mm, etc.). However, it should be understood that other form factors (including non-circular form factors) may also be used to instrument the substrate. One or more sensors may be distributed across the surface of the substrate to provide spatial data collection. In one embodiment, the sensors may include any type of sensor. For example, the sensors may include pressure sensors, temperature sensors, electrical sensors (e.g., for detecting one or more plasma processing conditions), optical sensors, etc. Referring now to FIG. 1 , a cross-sectional view of a plasma processing tool 100 is shown, according to one embodiment. In one embodiment, the plasma processing tool 100 may include a chamber 101. The chamber 101 may be adapted to contain a plasma 140. For example, the chamber 101 may be a vacuum chamber. Exhaust ports, pumps, and the like that enable low-pressure operation are omitted to more clearly illustrate certain portions of the embodiment. In one embodiment, chamber 101 may include a pedestal or chuck 120. Chuck 120 may include a mechanism for securing a substrate, such as instrumented substrate 150. For example, chuck 120 may be an electrostatic chuck (ESC). Chuck 120 may also include gas lines to provide backside gas flow and / or heating and cooling solutions to control the temperature of instrumented substrate 150. A showerhead 110, etc., may be provided opposite chuck 120. Showerhead 110 may be configured to flow one or more process gases, inert gases, into the chamber. In one embodiment, the chuck 120 may be coupled to an RF generator 121. The RF generator 121 provides power coupled into the chamber 101 to ignite and sustain the plasma 140. Typically, the RF generator 121 operates at a frequency of approximately 13 MHz (e.g., 13.56 MHz). In one embodiment, matching (not shown) may be provided between the RF generator 121 and the chuck 120. Furthermore, a VI sensor 123 may be provided between the chuck 120 and the RF generator 121. The VI sensor 123 may be configured to detect a modulated signal generated by the instrumented substrate 150. The processing used to generate the modulated signal is described in more detail below. A demodulator 124 may be coupled to the VI sensor to extract data from the modulated signal from the instrumented substrate 150. In one embodiment, a high-frequency (HF) modulator 122 may also be coupled to the RF generator 121. The HF modulator 122 may be used to upload data to the instrumented substrate 150, as described in more detail below. Referring now to FIG. 2A and FIG. 2B , a pair of schematic diagrams of an instrumented substrate 250 configured to download data from the instrumented substrate 250 to an external source are shown, according to one embodiment. Referring now to FIG. 2A , a schematic diagram of an instrumented substrate 250 having a communication module 260 is shown, according to one embodiment. In one embodiment, the communication module 260 can be communicatively coupled to a sensor 252. While a single sensor 252 is shown, it should be understood that any number of sensors 252 can be provided on the instrumented substrate 250 and communicatively coupled to the communication module 260. The sensor 252 can be a temperature sensor, a pressure sensor, a plasma property sensor, an optical sensor, etc. In one embodiment, data from the sensor 252 is wirelessly communicated to an external device using the communication module 260. In one embodiment, the communication module 260 may include an input antenna 253. The input antenna 253 may be configured to detect the RF frequency and phase used to generate the plasma 140. For example, the input antenna 253 may be configured to detect frequencies around 13 MHz. The input antenna 253 may be any antenna configuration. For example, the input antenna 253 may be a coil antenna, etc. Input antenna 253 may be coupled to frequency generator 254. In the case of a multiplier, frequency generator 254 multiplies the frequency of the signal detected by input antenna 253. For example, the multiplier may multiply the frequency by an integer multiple. In some embodiments, the multiplier may increase the frequency by an order of magnitude or more. The multiplier may be implemented using any suitable circuitry and components, such as diodes, varactor diodes, microelectromechanical systems (MEMS), phase-locked loops (PLLs), and the like. In one embodiment, frequency generator 254 may be coupled to modulator / switch 255. That is, the signal from frequency generator 254 is provided to modulator / switch 255. The signal from frequency generator 254 is used as a carrier signal, and modulator / switch 255 modulates the carrier signal to mix data from sensor 252 onto the carrier signal. Modulator / switch 255 may use any suitable modulation protocol. For example, modulation may include ASK modulation, PSK modulation, BPSK modulation, or FSK modulation. In some embodiments, a single modulation channel is used. In other embodiments, two or more modulation channels may be used to increase the bandwidth of data transmission. In one embodiment, a modulator / switch 255 is coupled to an output antenna 256. The modulator / switch 255 switches the output antenna 256 on and off. When the output antenna 256 is on, a first impedance is present, and when the output antenna 256 is off, a second impedance, different from the first impedance, is present. This impedance switch can then be detected by the VI sensor 123 of the plasma processing tool 100. The demodulator 124 can then demodulate the signal to extract data. The output antenna 256 can be any antenna topology. For example, the antenna can be a coil antenna. Referring now to FIG. 2B , a schematic diagram of an instrumented substrate 250 according to an additional embodiment is shown. In one embodiment, the instrumented substrate 250 in FIG. 2B can be substantially similar to the instrumented substrate 250 in FIG. 2A , except for the communication module 260. The communication module 260 in FIG. 2B includes only the output antenna 256, rather than both the input antenna 253 and the output antenna 256. The input antenna 253 can be omitted when the RF frequency is a known quantity. For example, RF plasmas typically operate at 13.56 MHz. In such an embodiment, the source 254 can be set to a frequency substantially higher than the known frequency. For example, the source 254 can be a clock with a frequency set to over 100 MHz. The signal from the source 254 can then be used as a carrier signal modulated by the modulator / switch 255. The output antenna 256 switches on and off, inducing an impedance change that can be detected by the VI sensor 123 of the plasma processing tool. Referring now to FIG. 3 , a cross-sectional view of a plasma processing tool 300 is shown according to one embodiment. In one embodiment, the plasma processing tool 300 can be substantially similar to the plasma processing tool 100 described above, except that an additional RF generator 321B is coupled to the showerhead 310. That is, the plasma processing tool 300 can include a chamber 301, a chuck 320, a plasma 340, and a showerhead 310. A first RF generator 321A, a first VI sensor and chamber match 323A, a first demodulator 324A, and a first HF modulator 322A can be coupled to the chuck 320. Similarly, a second RF generator 321B, a second VI sensor 323B, a second demodulator 324B, and a second HF modulator 322B can be coupled to the showerhead. That is, embodiments are not limited to a single RF frequency. In some embodiments, different RF frequencies may be used for the first RF generator 321A and the second RF generator 321B. These different frequencies may be used as communication paths to download data from (or upload data to) the instrumented substrate 350. Referring now to FIG4 , a schematic diagram of an instrumented substrate 450 is shown according to one embodiment. In one embodiment, the instrumented substrate 450 includes a sensor 452 coupled to a communication module 460. While a single sensor 452 is shown, it should be understood that any number of sensors 452 may be coupled to the communication module 460. The sensor 452 may include a temperature sensor, a pressure sensor, a plasma property sensor, an optical sensor, or any other sensor type. In one embodiment, the communication module 460 can be configured to upload data to the instrumented substrate 450. For example, an external device can provide instructions to the instrumented substrate 450 to control one or more sensors 452. In a particular embodiment, the communication module 460 includes an input antenna 459, a demodulator 458, and a controller 457 (e.g., a microcontroller unit (MCU)). In one embodiment, the input antenna 459 is configured to pick up the modulated EM field generated by the RF generator via the chuck. The carrier signal can be the RF frequency of the plasma (or a multiple of the RF frequency), and the modulated signal can be at a higher or lower frequency. For example, the carrier signal can be an order of magnitude higher or lower than the RF frequency. Providing the modulated signal at a frequency away from the RF frequency allows the signal to propagate into the chamber without negatively impacting the plasma performance. In one embodiment, the modulated signal can be added to the RF frequency by an HF modulator similar to the HF modulators 122 and 322 described in more detail above. The modulated signal can be provided into the chamber at a power less than the power of the RF frequency used for the plasma. The input antenna 459 can be any antenna structure, such as a coil. After the modulated signal is received by the input antenna 459, the modulated signal is sent to the demodulator 458. The demodulator 458 is configured to extract data from the modulated signal. In one embodiment, the data may then be provided to the controller 457. The controller 457 may store the data in a memory (not shown) or use the data as instructions for controlling one or more sensors 452 on the instrumented substrate 450. 5A and 5B , schematic diagrams of an instrumented substrate 550 with a communication module 560 are shown according to one embodiment. As will be understood by those skilled in the art, the instrumented substrate 550 may include a communication module 560 that allows for bidirectional communication between the instrumented substrate 550 and external devices. Referring now to FIG5A , a schematic diagram of an instrumented substrate 550 is shown according to one embodiment. In one embodiment, the instrumented substrate 550 may include a sensor 552 coupled to a communication module 560. In one embodiment, the sensor 552 may be a single sensor 552, or there may be a plurality of sensors 552 coupled to the communication module 560. The sensor 552 may include a temperature sensor, a pressure sensor, a plasma property sensor, an optical sensor, and the like. In one embodiment, the communication module 560 may include a transmit line and a receive line. In one embodiment, the receive line includes an input antenna 559, a demodulator 558, and a controller 557. The input antenna 559 is configured to receive a modulated signal mixed with an RF frequency. The modulated signal may be at a frequency at least one order of magnitude higher or lower than the RF frequency. The modulated signal may contain data used by the controller 557 to control one or more sensors 552 on the instrumented substrate 550. After the input antenna 559 receives the modulated signal, the demodulator 558 demodulates the signal and provides the extracted data to the controller 557. In one embodiment, the transmission line may include an input antenna 553, a signal source 554, a modulator / switch 555, and an output antenna 556. In some embodiments, the input antenna 552 picks up the plasma's RF frequency. The signal source 554 then uses the RF frequency to generate a carrier frequency. For example, the signal source 554 may be a multiplier that multiplies the RF frequency by an integer multiple. In some embodiments, the signal source 554 may multiply the RF frequency by at least one order of magnitude higher than the RF frequency. The carrier signal is then transmitted to a modulator / switch 555, which uses one or more modulation schemes / channels to add a data stream (e.g., data from one or more sensors 552) to the carrier signal. The modulator / switch 555 can cause the output antenna 556 to be switched on / off, or directly switch the input antenna 553 on / off, turning 553 into an output antenna. The output antenna 556 (or 553) presents a first impedance when on and a second (different) impedance when off. This change in impedance can be detected by a VI sensor (e.g., VI sensor 123 or 323) in the plasma processing tool, and the signal can be demodulated by a demodulator (e.g., demodulator 124 or 324) to extract the data for use by an external source. Referring now to FIG. 5B , a schematic diagram of an instrumented substrate 550 according to an additional embodiment is shown. As shown, instrumented substrate 550 is substantially similar to instrumented substrate 550 in FIG. 5A , except for the transmission line. The transmission line originates from a signal source 554 , which lacks an input antenna 553 . For example, signal source 554 can be a clock. Signal source 554 can be set to a frequency known to be different from the RF frequency. For example, RF plasma typically operates at 13.56 MHz, so the clock of signal source 554 can be set to generate a carrier signal of 100 MHz or higher. The carrier signal is then passed to a modulator / switch 555, which adds a data stream (e.g., data from one or more sensors 552) to the carrier signal using one or more modulation schemes / channels. The modulator / switch 555 can cause the output antenna 556 to be switched on / off. The output antenna 556 provides a first impedance when on and a second (different) impedance when off. The change in impedance can be detected by a VI sensor (e.g., VI sensor 123 or 323) of the plasma processing tool, and the signal can be demodulated by a demodulator (e.g., demodulator 124 or 324) to extract the data for use by an external source. Referring now to FIG6 , a block diagram of an exemplary computer system 600 of a processing tool according to one embodiment is shown. In one embodiment, the computer system 600 is coupled to and controls the processing in the processing tool. The computer system 600 can be connected (e.g., networked) to other machines in a local area network (LAN), an intranet, an extranet, or the Internet. The computer system 600 can operate in the capacity of a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 600 can be a personal computer (PC), a tablet computer, a set-top box (STB), a personal digital assistant (PDA), a mobile phone, a network appliance, a server, a network router, a switch or bridge, or any machine capable of executing a set of instructions (sequentially or otherwise) to specify the actions to be taken by the machine. Further, while a single machine is illustrated with respect to computer system 600, the term "machine" shall also be taken to include any collection of machines (e.g., computers) that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methodologies described herein. The computer system 600 may include a computer program product, or software 622, a non-transitory machine-readable medium having instructions stored thereon that can be used to program the computer system 600 (or other electronic devices) to perform processes according to embodiments. A machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, a machine-readable (e.g., computer-readable) medium includes a machine-readable (e.g., computer) storage medium (e.g., read-only memory ("ROM"), random access memory ("RAM"), magnetic disk storage media, optical storage media, flash memory devices, etc.), a machine-readable (e.g., computer) transmission medium (electrical, optical, acoustical, or other form of propagated signals (e.g., infrared light signals, digital signals, etc.)), etc. In one embodiment, the computer system 600 includes a system processor 602, a main memory 604 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)), etc.), a static memory 606 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 618 (e.g., a data storage device), which communicate with each other via a bus 630. System processor 602 represents one or more general-purpose processing devices, such as a microsystem processor, a central processing unit, or the like. More specifically, the system processor may be a complex instruction set computing (CISC) microsystem processor, a reduced instruction set computing (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, a system processor that implements other instruction sets, or a system processor that implements a combination of instruction sets. System processor 602 may also be one or more special-purpose processing devices, such as an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal processor (DSP), a network system processor, or the like. System processor 602 is configured to execute processing logic 626 for performing the operations described herein. The computer system 600 may further include a system network interface device 608 for communicating with other devices or machines. The computer system 600 may also include an image display unit 610 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 612 (e.g., a keyboard), a cursor control device 614 (e.g., a mouse), and a signal generating device 616 (e.g., a speaker). Secondary memory 618 may include a machine-accessible storage medium 632 (or, more specifically, a computer-readable storage medium) on which is stored one or more sets of instructions (e.g., software 622) that implement any one or more of the methods or functions described herein. Software 622 may also reside, completely or at least partially, within main memory 604 and / or within system processor 602 during execution by computer system 600, with main memory 604 and system processor 602 also constituting machine-readable storage media. Software 622 may further be transmitted or received over network 620 via system network interface device 608. In one embodiment, network interface device 608 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling. Although the machine-accessible storage medium 632 is shown as a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be construed to include a single medium or multiple media (e.g., a centralized or distributed database and / or associated caches and servers) that store one or more sets of instructions. The term "machine-readable storage medium" should also be construed to include any medium that can store or encode a set of instructions for execution by a machine and cause the machine to perform any one or more of the methodologies. Accordingly, the term "machine-readable storage medium" should be construed to include, but not be limited to, solid-state memory, and optical and magnetic media. In the foregoing specification, specific exemplary embodiments have been described. It will be apparent that various modifications may be made thereto without departing from the scope of the following claims. Accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense. 100: Plasma Processing Tool 101: Chamber 110: Showerhead 120: Chuck 121: RF Generator 122: HF Modulator 123: VI Sensor 124: Demodulator 140: Plasma 150: Instrumented Substrate 250: Instrumented Substrate 252: Sensor 253: Input Antenna 254: Frequency Generator 255: Modulator / Switch 256: Output Antenna 260: Communication Module 300: Plasma Processing Tool 301: Chamber 310: Showerhead 320: Chuck 321A: First RF Generator 321B: Second RF Generator 322A: First HF Modulator 322B: Second HF Modulator 323A: First VI Sensor and Chamber Matching 323B: Second VI Sensor 324A: First Demodulator 324B: Second Demodulator 340: Plasma 35 0: Instrumented Substrate 450: Instrumented Substrate 452: Sensor 457: Controller 458: Demodulator 459: Input Antenna 460: Communication Module 550: Instrumented Substrate 552: Sensor 553: Input Antenna 554: Signal Source 555: Modulator / Switch 556: Output Antenna 557: Controller 558: Demodulator 559: Input Antenna 560: Communication Module 600: Computer System 602: System Processor 604: Main Memory 606: Static Memory 608: System Network Interface Device 610: Image Display Unit 612: Alphanumeric Input Device 614: Cursor Control Device 616: Signal Generator 618: Secondary Memory 620: Network 622: Software 626: Processing Logic 630: Bus 632: Machine-Accessible Storage Media 1 is a cross-sectional view of a plasma chamber with an RF generator and a VI sensor according to one embodiment. 2A is a schematic diagram of an instrumented substrate with a communication module configured to download data from the instrumented substrate to an external device according to one embodiment. FIG. 2B is a schematic diagram of an instrumented substrate having a communication module including only an output antenna according to one embodiment. 3 is a cross-sectional view of a plasma chamber having a first RF generator coupled to a chuck and a second RF generator coupled to a showerhead according to one embodiment. FIG. 4 is a schematic diagram of an instrumented substrate having a communication module configured to upload data from an external device according to one embodiment. 5A is a schematic diagram of an instrumented substrate with a communication module according to one embodiment, wherein the communication module is configured to transmit data between the instrumented substrate and an external device. 5B is a schematic diagram of an instrumented substrate having a communication module configured to transmit data between the instrumented substrate and an external device according to additional embodiments. 6 illustrates a block diagram of an exemplary computer system that may be used in conjunction with a processing tool according to one embodiment. Domestic deposit information (please note in the order of deposit organization, date, and number) None Foreign deposit information (please note in the order of deposit country, organization, date, and number) None 100: Plasma processing tools 101: Chamber 110: Nozzle 120: Chuck 121:RF Generator 122:HF modulator 123:VI sensor 124: Demodulator 140: Plasma 150: Instrumented substrate

Claims

1. A diagnostic substrate, comprising: One substrate; A sensor, the sensor being on the substrate; The system includes a communication module on the substrate and the communication module is communicatively coupled to the sensor. The communication module includes: an output antenna; a switch coupled to the output antenna; a signal source coupled to the switch; and an input antenna coupled to the signal source. The input antenna is configured to obtain a frequency of a plasma by detecting a change in an electromagnetic field near the substrate, and the signal source is a signal multiplier that multiplies the frequency of the plasma by an integer multiple.

2. The diagnostic substrate as claimed in claim 1, wherein the signal multiplier includes one or more of the following: a diode, a varactor diode, a microelectromechanical system (MEMS) device, and a phase-locked loop (PLL).

3. The diagnostic substrate as claimed in claim 1, wherein the signal source is a clock that generates a frequency different from a plasma frequency.

4. The diagnostic substrate as claimed in claim 1, wherein the sensor is a temperature sensor, a pressure sensor, a voltage / bias sensor, an optical sensor, or a plasma sensor for detecting one or more of electrons, ions, and free radicals.

5. The diagnostic substrate as described in claim 4, wherein the sensor is one of a plurality of sensors.

6. The diagnostic substrate as claimed in claim 1, wherein the communication module has a first impedance when the switch is on and a second impedance when the switch is off.

7. The diagnostic board as described in claim 6, wherein the switch operates at a frequency associated with the signal source.

8. The diagnostic substrate as claimed in claim 7, wherein the switching frequency is modulated using an ASK modulation, a PSK modulation, a BPSK modulation, or an FSK modulation.

9. The diagnostic board as claimed in claim 1, wherein the communication module is configured to download information from the diagnostic board to an external device via impedance modulation through switching of the switch.

10. A diagnostic substrate, comprising: One substrate; A sensor, the sensor being on the substrate; The system includes a communication module on the substrate and communicatively coupled to the sensor. The communication module includes: an input antenna configured to collect modulated data, wherein the modulated data is provided at a carrier frequency supplied from a chamber RF generator, wherein the carrier frequency is a frequency for processing a plasma of the diagnostic substrate; a demodulator coupled to the input antenna; and a controller configured to control the sensor.

11. The diagnostic board as claimed in claim 10, wherein the input antenna is a high-frequency antenna configured to pick up frequencies different from plasma frequencies.

12. The diagnostic substrate as claimed in claim 10, wherein the transmission of the modulated data is performed at a power level lower than a plasma power.

13. The diagnostic substrate as claimed in claim 10, wherein the carrier frequency is at least one order of magnitude higher or lower than a plasma frequency.

14. The diagnostic board as claimed in claim 10, wherein the communication module is configured to read data from an external RF generator by demodulating a signal from the input antenna.

15. A plasma treatment tool, comprising: A chamber configured to contain a plasma; An RF generator coupled to the chamber, wherein power from the RF generator is configured to couple into one or more gases in the chamber to form the plasma; a voltage-current (VI) sensor between the RF generator and the chamber; and a diagnostic substrate within the chamber, wherein the diagnostic substrate includes: a substrate; a sensor on the substrate; and a communication module coupled to the sensor, wherein the communication module is configured to wirelessly communicate with a device outside the chamber using a carrier signal at a carrier frequency that is an integer multiple of a frequency of the plasma.

16. The plasma processing tool as described in claim 15, wherein the communication module comprises: An input antenna, wherein the input antenna is configured to detect the frequency of the plasma; A signal multiplier coupled to the input antenna; a switch coupled to the signal multiplier; and an output antenna coupled to the switch, wherein switching the switch on and off causes an impedance change detectable by the VI sensor.

17. The plasma processing tool as described in claim 15, wherein the communication module comprises: An input antenna, wherein the input antenna is configured to collect data from a modulated RF signal used to form the plasma; A demodulator coupled to the input antenna; and a controller configured to control the sensor.

18. The plasma processing tool as claimed in claim 15, wherein the communication module is configured to upload data from an external device to the substrate and / or download information from the substrate to the external device.

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