Capacitor and electronic device

Abstract

A capacitor includes a first electrode, a second electrode, and a first capacitor dielectric layer. The first capacitor dielectric layer is disposed between the first electrode and the second electrode. The first capacitor dielectric layer includes a first dielectric layer and a second dielectric layer. The first dielectric layer includes an inorganic dielectric layer, and the second dielectric layer includes an organic dielectric layer. The first dielectric layer is located between the first electrode and the second dielectric layer, and the second dielectric layer is located between the first dielectric layer and the second electrode.

Description

Capacitors and electronic devices This disclosure relates to a capacitor, and more particularly to a capacitor in an electronic device. In existing technologies, the excessive thickness of passive components, such as multilayer ceramic capacitors (MLCCs), often hinders miniaturization in subsequent integrated circuit packaging. Therefore, techniques for integrating passive components into redistribution structures within package structures using thin-film processes have been proposed. However, large-area panel-level redistribution processes face challenges due to poor dielectric film flatness, leading to high dielectric losses, energy loss, and heat generation in capacitors, thus reducing the overall performance of passive components. Furthermore, when passive components operate at high frequencies, the natural frequency of the capacitor stack is easily affected by its size, causing the capacitance value to deviate from the original design; that is, the capacitance value becomes unstable, for example, changing from a capacitor to an inductor. The embodiments disclosed herein provide a capacitor and an electronic device having the capacitor. In one embodiment of this disclosure, the capacitor includes a first electrode, a second electrode, and a first capacitor dielectric layer. The first capacitor dielectric layer is disposed between the first electrode and the second electrode. The first capacitor dielectric layer includes a first dielectric layer and a second dielectric layer. The first dielectric layer includes an inorganic dielectric layer, and the second dielectric layer includes an organic dielectric layer. The first dielectric layer is located between the first electrode and the second dielectric layer, and the second dielectric layer is located between the first dielectric layer and the second electrode. In another embodiment of this disclosure, the electronic device includes a substrate, a redistribution structure, a capacitor, and a chip. The redistribution structure is disposed on the substrate. The capacitor is electrically connected to the redistribution structure and includes a first electrode, a second electrode, and a first capacitor dielectric layer. The first capacitor dielectric layer is disposed between the first electrode and the second electrode. The first capacitor dielectric layer includes a first dielectric layer and a second dielectric layer. The first dielectric layer includes an inorganic dielectric layer, and the second dielectric layer includes an organic dielectric layer. The first dielectric layer is located between the first electrode and the second dielectric layer, and the second dielectric layer is located between the first dielectric layer and the second electrode. The chip is disposed on the redistribution structure and is electrically connected to the redistribution structure. The following description provides detailed examples and accompanying drawings, but these examples are not intended to limit the scope of this disclosure. Furthermore, the drawings are for illustrative purposes only and are not drawn to scale. For ease of understanding, the same elements will be labeled with the same symbols in the following description. Additionally, the terms "comprising," "including," "having," etc., used herein are open-ended terms, meaning "including but not limited to." Moreover, directional terms such as "upper" and "lower" are used only for reference to the direction of the drawings and are not intended to limit this disclosure. Furthermore, the quantities and shapes mentioned in the specification are only used to concretely illustrate this disclosure to facilitate understanding of its content and are not intended to limit this disclosure. Figure 1 is a schematic cross-sectional view of a capacitor according to a first embodiment of the present disclosure. Referring to Figure 1, the capacitor 100 of this embodiment includes a substrate 110 and a capacitor stack 120 disposed on the substrate 110. The substrate 110 includes a first material layer 110a and a second material layer 110b disposed on the first material layer 110a. For example, the first material layer 110a of the substrate 110 includes glass, and the second material layer 110b of the substrate 110 includes an organic dielectric material. As shown in Figure 1, the substrate 110 has a groove R1, which is distributed only in the second material layer 110b, and the capacitor stack 120 covers the bottom surface of the groove R1, the side surface of the groove R1, and the top surface of the second material layer 110b. In other words, the depth of the groove R1 is less than the thickness of the second material layer 110b. For example, the bottom area of ​​the groove R1 is 20 micrometers x 20 micrometers, and the depth of the groove R1 is between 10 micrometers and 20 micrometers. The thin-film capacitor stack 120 includes a first electrode 122, a second electrode 124, and a first capacitor dielectric layer 126. The first capacitor dielectric layer 126 is disposed between the first electrode 122 and the second electrode 124. The first capacitor dielectric layer 126 includes a first dielectric layer 126a and a second dielectric layer 126b. The first dielectric layer 126a includes an inorganic dielectric layer, and the second dielectric layer 126b includes an organic dielectric layer. The first dielectric layer 126a is located between the first electrode 122 and the second dielectric layer 126b, and the second dielectric layer 126b is located between the first dielectric layer 126a and the second electrode 124. Furthermore, the thickness of the first dielectric layer 126a is between 180 nanometers and 220 nanometers, and the thickness of the second dielectric layer 126b is between 20 nanometers and 50 nanometers. As shown in Figure 1, a first electrode 122 is disposed on a substrate 110, and a first capacitor dielectric layer 126 and a second electrode 124 are stacked on the first electrode 122. Furthermore, the first electrode 122, the first capacitor dielectric layer 126, and the second electrode 124 cover the bottom surface of the groove R1, the side surface of the groove R1, and the top surface of the second material layer 110b, and the first electrode 122 is in contact with the bottom surface of the groove R1, the side surface of the groove R1, and the top surface of the second material layer 110b. In this embodiment, the first dielectric layer 126a has a first surface S1, which is covered by a second dielectric layer 126b and is in contact with the second dielectric layer 126b. The second dielectric layer 126b has a second surface S2, which is covered by a second electrode 124 and is in contact with the second electrode 124. The roughness of the first surface S1 of the first dielectric layer 126a is greater than the roughness of the second surface S2 of the second dielectric layer 126b. In other words, the interface roughness between the first dielectric layer 126a and the second dielectric layer 126b is greater than the interface roughness between the second electrode 124 and the second dielectric layer 126b. For example, the roughness of the first surface S1 of the first dielectric layer 126a is between 30 nanometers and 90 nanometers, and the roughness of the second surface S2 of the second dielectric layer 126b is between 10 nanometers and 40 nanometers. Since the second dielectric layer 126b, made of organic materials, has better step coverage, the second dielectric layer 126b covering the first surface S1 of the first dielectric layer 126a with higher roughness can provide the second surface S2 with lower roughness. In this embodiment, the distribution area of ​​the capacitor stack 120 (i.e., the first electrode 122, the second electrode 124, and the first capacitor dielectric layer 126) in the capacitor 100 is less than or equal to 50 micrometers x 50 micrometers. When the distribution area of ​​the capacitor 100 is controlled within the range of 50 micrometers x 50 micrometers, the natural frequency of the capacitor 100 during high-frequency operation can be well controlled. The control of the distribution area of ​​the capacitor 100 can improve the dielectric loss problem caused by poor flatness of the large-area dielectric film during high-speed transmission. It is worth noting that the capacitance value provided by the thin-film capacitor stack 120 can be adjusted by the angle between the sidewall and the bottom of the groove R1. In other words, the capacitance value provided by the thin-film capacitor stack 120 can be adjusted by the slope of the sidewall of the groove R1 and the depth of the groove R1. In some embodiments, the distribution area of ​​the capacitor stack 120 covering the groove R1 is preferably between 22.5 μm x 22.5 μm and 35 μm x 35 μm. In some other embodiments, the groove R1 formed in the substrate 110 can be omitted; in other words, the capacitor stack 120 can be formed directly on the surface of the substrate 110. Figure 2 is a cross-sectional schematic diagram of a capacitor according to the second embodiment of this disclosure. Referring to Figures 1 and 2, the capacitor 200 of this embodiment is similar to the capacitor 100 of the first embodiment, except that the main difference is that the substrate 110 in this embodiment is a glass substrate, and the groove R2 is only distributed within the glass substrate 110. Furthermore, the groove R2 does not penetrate the substrate 110. In other words, the depth of the groove R2 is less than the thickness of the substrate 110. For example, the bottom area of ​​the groove R2 is 20 micrometers x 20 micrometers, and the depth of the groove R2 is between 10 micrometers and 20 micrometers. Figure 3A is a schematic cross-sectional view of a capacitor according to a third embodiment of the present disclosure. Referring to Figures 1 and 3A, the capacitor 300 of this embodiment is similar to the capacitor 100 of the first embodiment, except that the main difference is that the groove R3 in this embodiment penetrates the second material layer 110b and extends into a portion of the first material layer 110a. Furthermore, the groove R3 does not penetrate the first material layer 110a of the substrate 110. In other words, the depth of the groove R3 is greater than the thickness of the second material layer 110b, and the depth of the groove R3 is less than the thickness of the substrate 110. For example, the bottom area of ​​the groove R3 is 20 micrometers x 20 micrometers, and the depth of the groove R3 is between 10 micrometers and 20 micrometers. As shown in Figure 3A, the first electrode 122, the first capacitor dielectric layer 126, and the second electrode 124 cover the bottom surface of the groove R3, the side surface of the groove R3, and the top surface of the second material layer 110b. Furthermore, the bottom and lower half of the sidewalls of the groove R3 can be defined by the first material layer 110a, while the upper half of the sidewalls of the groove R3 can be defined by the second material layer 110b, and the first electrode 122 is in contact with both the first material layer 110a and the second material layer 110b. Figure 3B is another cross-sectional schematic diagram of a capacitor according to a third embodiment of this disclosure. Referring to Figures 3A and 3B, the capacitor 500 shown in Figure 3B is similar to the capacitor 300 shown in Figure 3A, except that the main difference is that in this embodiment, the groove R3' extending through the second material layer 110b and into a portion of the first material layer 110a has stepped sidewalls. The groove R3' has a lower half sidewall SW1 and an upper half sidewall SW2, wherein the first material layer 110a defines the lower half sidewall SW1 of the groove R3', and the second material layer 110b defines the upper half sidewall SW2 of the groove R3'. Because the materials of the first material layer 110a and the second material layer 110b are different, the slope of the lower half sidewall SW1 is different from the slope of the upper half sidewall SW2. In some embodiments, the slope of the lower half sidewall SW1 is greater than the slope of the upper half sidewall SW2. In some other embodiments, the slope of the lower half sidewall SW1 is less than the slope of the upper half sidewall SW2. It is worth noting that the difference in slope between the lower half sidewall SW1 and the upper half sidewall SW2 mainly depends on the material selection of the first material layer 110a and the second material layer 110b. For example, the bottom area of ​​the groove R3' is 20 micrometers x 20 micrometers, and the depth of the groove R3' is between 10 micrometers and 20 micrometers. As shown in Figure 3B, the first electrode 122, the first capacitor dielectric layer 126, and the second electrode 124 cover the bottom surface of the groove R3', the partial top surface of the first material layer 110a (i.e., the area connecting the side surfaces SW1 and SW2), the side surfaces SW1 and SW2 of the groove R3', and the top surface of the second material layer 110b. Figure 4 is a cross-sectional schematic diagram of a capacitor according to the fourth embodiment of this disclosure. Referring to Figures 3A and 4, the capacitor 400 of this embodiment is similar to the capacitor 300 of the third embodiment, except that the main difference lies in the capacitor stack 120' covering the groove R4. As shown in Figure 4, in addition to the first electrode 122, the second electrode 124, and the first capacitor dielectric layer 126, the capacitor stack 120' further includes a third electrode 128 and a second capacitor dielectric layer 129, wherein the second capacitor dielectric layer 129 is disposed on the second electrode 124 and is located between the second electrode 124 and the third electrode 128. Furthermore, the third electrode 128 and the second capacitor dielectric layer 129 in the capacitor stack 120' of this embodiment can also be applied to the capacitor 100 shown in Figure 1 and the capacitor 200 shown in Figure 2. In this embodiment, the second capacitor dielectric layer 129 is a single-layer thin film structure, and the material of the second capacitor dielectric layer 129 may be the same as or different from the material of the first dielectric layer 126a. For example, the material of the second capacitor dielectric layer 129 may include inorganic dielectric materials that are the same as or different from the material of the first dielectric layer 126a. In other embodiments, the second capacitor dielectric layer 129 may have the same stacked thin film structure as the first capacitor dielectric layer 126. For example, the second capacitor dielectric layer 129 may include an inorganic dielectric layer and an organic dielectric layer, with the inorganic dielectric layer located between the second electrode 124 and the organic dielectric layer, and the organic dielectric layer located between the inorganic dielectric layer and the third electrode 128. Figure 5 is a cross-sectional schematic diagram of an electronic device according to the fifth embodiment of this disclosure. Referring to Figure 5, the electronic device P1 in this embodiment includes a substrate 510, a redistribution structure 520, a chip 530, and a capacitor 540. For example, the substrate 510 includes a glass substrate, the redistribution structure 520 is disposed on the surface of the substrate 510, and the chip 530 is disposed on and electrically connected to the redistribution structure 520. Furthermore, the capacitor 540 is disposed on the surface of the substrate 510 and embedded or buried within the redistribution structure 520. In this embodiment, before the capacitor 540 is disposed and the redistribution structure 520 is formed, a conductor 512 (e.g., a metal conductor) may be formed on the surface of the substrate 510, wherein the capacitor 540 is disposed on the conductor 512 and electrically connected to the conductor 512. In this embodiment, the redistribution structure 520 includes alternating stacked multilayer dielectric layers 522 and multilayer redistribution layers 524. The multilayer dielectric layers 522 include a bottom dielectric layer 522a covering the substrate 510 and the capacitor 540, and a top dielectric layer 522b disposed on the bottom dielectric layer 522a. The multilayer redistribution layers 524 include a bottom redistribution layer 524a disposed on the bottom dielectric layer 522a and electrically connected to the conductor 512, and a top redistribution layer 524b disposed on the bottom redistribution layer 524a. It is worth noting that the number of dielectric layers 522 and redistribution layers 524 in the redistribution structure 520 is not limited to two layers. In other words, there may be other dielectric layers between the bottom dielectric layer 522a and the top dielectric layer 522b, and there may be other redistribution layers between the bottom redistribution layer 524a and the top redistribution layer 524b. As shown in Figure 5, the conductive wires 512 and capacitor 540 disposed on the surface of substrate 510 are in contact with the bottom dielectric layer 522a of the multilayer dielectric layers 522, and capacitor 540 can be electrically connected to the bottom redistribution layer 524a through the conductive wires 512 formed on substrate 510. Here, the structure of capacitor 540 can be the structure of capacitors 100, 200, 300, 400 or 500 shown in Figures 1, 2, 3A, 3B or 4. Since the thickness of capacitor 540 can be controlled at the level of hundreds of nanometers to micrometers, and since capacitor 540 is embedded or buried in redistribution structure 520, the overall thickness of electronic device P1 is not affected by the thickness of capacitor 540 and cannot be further reduced. Figure 6 is a cross-sectional schematic diagram of an electronic device according to the sixth embodiment of this disclosure. Referring to Figures 5 and 6, the electronic device P2 in this embodiment is similar to the electronic device P1 in the fifth embodiment, except that the main difference lies in the placement of the capacitor 540. As shown in Figure 6, the redistribution structure 520 includes alternating stacked multilayer dielectric layers 522 and multilayer redistribution layers 524. The multilayer dielectric layers 522 include a bottom dielectric layer 522a covering the substrate 510 and a top dielectric layer 522b disposed on the bottom dielectric layer 522a. The multilayer redistribution layer 524 includes a bottom redistribution layer 524a disposed on the bottom dielectric layer 522a and a top redistribution layer 524b disposed on the top dielectric layer 522b. The top redistribution layer 524b is electrically connected to the bottom redistribution layer 524a. It is worth noting that the number of dielectric layers 522 and redistribution layers 524 in the redistribution structure 520 is not limited to two layers. In other words, there may be other dielectric layers between the bottommost dielectric layer 522a and the topmost dielectric layer 522b, and there may be other redistribution layers between the bottommost redistribution layer 524a and the topmost redistribution layer 524b. In this embodiment, the capacitor 540 is not disposed on the surface of the substrate 510; the capacitor 540 is disposed on the bottommost redistribution layer 524a and electrically connected to the bottommost redistribution layer 524a. Furthermore, the capacitor 540 is covered by the topmost dielectric layer 522b in the redistribution structure 520. Figure 7 is a cross-sectional schematic diagram of an electronic device according to the seventh embodiment of this disclosure. Referring to Figures 5 and 7, the electronic device P3 of this embodiment is similar to the electronic device P1 of the fifth embodiment, except that the main difference lies in the placement of the capacitor 540. As shown in Figure 7, the redistribution structure 520 includes alternating stacked multilayer dielectric layers 522 and multilayer redistribution layers 524. The multilayer dielectric layers 522 include a bottom dielectric layer 522a covering the substrate 510 and a top dielectric layer 522b disposed on the bottom dielectric layer 522a. The multilayer redistribution layer 524 includes a bottom redistribution layer 524a disposed on the bottom dielectric layer 522a and a top redistribution layer 524b disposed on the top dielectric layer 522b. The top redistribution layer 524b is electrically connected to the bottom redistribution layer 524a. It is worth noting that the number of dielectric layers 522 and redistribution layers 524 in the redistribution structure 520 is not limited to two layers. In other words, there may be other dielectric layers between the bottommost dielectric layer 522a and the topmost dielectric layer 522b, and there may be other redistribution layers between the bottommost redistribution layer 524a and the topmost redistribution layer 524b. The capacitor 540 is not disposed on the surface of the substrate 510, but is disposed on the surface of the redistribution structure 520, and is electrically connected to the topmost redistribution layer 524b. In this embodiment, the capacitor 540 is a surface-mount type passive element. Figure 8 is a cross-sectional schematic diagram of an electronic device according to the eighth embodiment of this disclosure. Referring to Figures 7 and 8, the electronic device P4 of this embodiment is similar to the electronic device P3 of the seventh embodiment, except that the main difference lies in the electrical connection between the capacitor 540 and the redistribution structure 520. As shown in Figure 8, the capacitor 540 is disposed on the surface of the redistribution structure 520, and the capacitor 540 is electrically connected to the topmost redistribution layer through the bonding structure 550, which includes a metallic material, such as Cu. It is worth noting that the number of capacitors 540 in the aforementioned electronic devices P1, P2, P3, and P4 is not limited to one. There can be multiple capacitors 540 in the electronic devices P1, P2, P3, and P4, and the electronic devices can use multiple capacitors 540 in various configurations (such as capacitors 100, 200, 300, 400, and 500 shown in Figures 1, 2, 3A, 3B, and 4) and in various placement positions (such as placement positions shown in Figures 5 to 8). Figure 9 is a cross-sectional schematic diagram of an electronic device according to the ninth embodiment of this disclosure. Referring to Figure 9, the electronic device P5 of this embodiment includes a lower electronic device 600A and an upper electronic device 600B disposed on the lower electronic device 600A. The lower electronic device 600A includes a first substrate 610A, a first conductive via 620A penetrating the first substrate 610A, a capacitor 640 embedded in the first substrate 610A, and a first bonding structure 630A, wherein the first bonding structure 630A covers the first substrate 610A, the first conductive via 620A, and the capacitor 640, and the first bonding structure 630A is electrically connected to the first conductive via 620A and the capacitor 640. The upper-layer electronic device 600B includes a second substrate 610B, a second conductive via 620B penetrating the second substrate 610B, and a redistribution structure 650. A second bonding structure 630B covers the second substrate 610B and the second conductive via 620B, and is electrically connected to the second conductive via 620B. Furthermore, the redistribution structure 650 covers the second substrate 610B and the second conductive via 620B, and is electrically connected to the second bonding structure 630B through the second conductive via 620B. As shown in Figure 9, the lower-layer electronic device 600A and the upper-layer electronic device 600B can be electrically connected through a first bonding structure 630A and a second bonding structure 630B. The capacitor 640 can be electrically connected to the redistribution structure 650 through the first bonding structure 630A, the second bonding structure 630B, and the second conductive via 620B. The first bonding structure 630A and the second bonding structure 630B are made of a metallic material, such as Cu. Here, the structure of capacitor 640 in electronic device P5 can be the structure of capacitor 100, 200, 300, 400 or 500 as shown in Figure 1, Figure 2, Figure 3A, Figure 3B or Figure 4. Figure 10 is a cross-sectional schematic diagram of an electronic device according to the tenth embodiment of the present disclosure. Referring to Figures 4 and 10, the capacitor 400' in the electronic device P6 of this embodiment is similar to the capacitor 400 of the fourth embodiment, except that the main difference is that the capacitor 400' in this embodiment further includes conductive vias V1 and V2, wherein the first electrode 122 is electrically connected to the first part of the third electrode 128 (e.g., the right side of the third electrode 128 in Figure 10) through the conductive via V1, and the second electrode 124 is electrically connected to the second part of the third electrode 128 (e.g., the left side of the third electrode 128 in Figure 10) through the conductive via V2, and the first part of the third electrode 128 and the second part of the third electrode 128 are electrically insulated from each other. As shown in Figure 10, the electronic device P6 of this embodiment includes a capacitor 400', a redistribution structure 520, and a chip 530. The redistribution structure 520 is disposed on and electrically connected to the capacitor 400', and the chip 530 is disposed on and electrically connected to the capacitor 400' through the redistribution structure 520. For example, a first portion of the third electrode 128, which is electrically connected to the first electrode 122, is electrically connected to one terminal of the chip 530 through a wire in the redistribution structure 520, while a second portion of the third electrode 128, which is electrically connected to the second electrode 124, is electrically connected to another terminal of the chip 530 through other wires in the redistribution structure 520. As shown in Figure 10, the dielectric layer in the redistribution structure 520 can be filled into the groove R4' of the capacitor 400'. In the above-disclosed embodiments, the capacitor dielectric layer having both inorganic and organic dielectric layers can effectively control the natural frequency of the capacitor during high-frequency operation, thereby improving the dielectric loss problem caused by poor flatness of the dielectric film during high-speed transmission. Although this disclosure has been disclosed above with reference to embodiments, it is not intended to limit this disclosure. Anyone skilled in the art may make some modifications and refinements without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure shall be determined by the appended claims. 100, 200, 300, 400, 400', 500: Capacitor; 110: Substrate; 110a: First material layer; 110b: Second material layer; 120, 120', 120'': Capacitor stack; 122: First electrode; 124: Second electrode; 126: First capacitor dielectric layer; 126a: First dielectric layer; 126b: Second dielectric layer; 128: Third electrode; 129: Second capacitor dielectric layer; 510: Substrate; 512: Conductor; 520: Redistribution structure; 522, 522a, 522b: Dielectric layer; 524, 524a, 524b: Redistribution layer; 53 0: Wafer 540: Capacitor 550: Bonding structure 600A: Lower electronic device 600B: Upper electronic device 610A: First substrate 610B: Second substrate 620A: First conductive via 620B: Second conductive via 630A: First bonding structure 630B: Second bonding structure 640: Capacitor 650: Redistribution structure P1, P2, P3, P4, P5, P6: Electronic devices R1, R2, R3, R3', R4, R4': Groove S1: First surface S2: Second surface SW1, SW2: Sidewalls V1, V2: Conductive via Figure 1 is a cross-sectional schematic diagram of a capacitor according to a first embodiment of the present disclosure. Figure 2 is a cross-sectional schematic diagram of a capacitor according to a second embodiment of the present disclosure. Figure 3A is a cross-sectional schematic diagram of a capacitor according to a third embodiment of the present disclosure. Figure 3B is another cross-sectional schematic diagram of a capacitor according to a third embodiment of the present disclosure. Figure 4 is a cross-sectional schematic diagram of a capacitor according to a fourth embodiment of the present disclosure. Figure 5 is a cross-sectional schematic diagram of an electronic device according to a fifth embodiment of the present disclosure. Figure 6 is a cross-sectional schematic diagram of an electronic device according to a sixth embodiment of the present disclosure. Figure 7 is a cross-sectional schematic diagram of an electronic device according to a seventh embodiment of the present disclosure. Figure 8 is a cross-sectional schematic diagram of an electronic device according to an eighth embodiment of the present disclosure. Figure 9 is a cross-sectional schematic diagram of an electronic device according to a ninth embodiment of the present disclosure. Figure 10 is a cross-sectional schematic diagram of an electronic device according to a tenth embodiment of the present disclosure. 100: Capacitor 110:Substrate 110a: First material layer 110b: Second material layer 120: Capacitor Stack 122: First electrode 124: Second electrode 126: First capacitor dielectric layer 126a: First dielectric layer 126b: Second dielectric layer S1: First surface S2: Second surface R1: Groove

Claims

1. A capacitor, comprising: First electrode; Second electrode; A first capacitor dielectric layer is disposed between the first electrode and the second electrode. The first capacitor dielectric layer includes a first dielectric layer and a second dielectric layer. The first dielectric layer includes an inorganic dielectric layer, and the second dielectric layer includes an organic dielectric layer. The first dielectric layer is located between the first electrode and the second dielectric layer, and the second dielectric layer is located between the first dielectric layer and the second electrode. The distribution area of ​​the first electrode, the second electrode, and the first capacitor dielectric layer is less than or equal to 50 micrometers x 50 micrometers, and the thickness of the organic dielectric layer is between 20 nanometers and 50 nanometers.

2. The capacitor of claim 1, wherein the first dielectric layer has a first surface in contact with the second dielectric layer, the second dielectric layer has a second surface in contact with the second electrode, and the roughness of the first surface is greater than the roughness of the second surface, and the roughness of the second surface is between 10 nanometers and 40 nanometers.

3. The capacitor as described in claim 1, further comprising: A substrate, wherein the first electrode is disposed on the substrate, and the first capacitor dielectric layer and the second electrode are stacked on the first electrode.

4. The capacitor of claim 3, wherein the substrate has a groove, the first electrode, the first capacitor dielectric layer and the second electrode cover the groove, and the distribution area of ​​the first electrode, the first capacitor dielectric layer and the second electrode is less than or equal to 50 micrometers x 50 micrometers by adjusting the depth of the groove and the slope of the sidewalls of the groove.

5. The capacitor as claimed in claim 3, wherein the substrate comprises: First material layer; And a second material layer disposed on the first material layer.

6. The capacitor of claim 5, wherein the substrate has a groove penetrating the second material layer and extending into a portion of the first material layer, and the first electrode, the first capacitor dielectric layer and the second electrode cover the groove.

7. The capacitor of claim 5, wherein the substrate has a groove distributed in the second material layer, and the first electrode, the first capacitor dielectric layer and the second electrode cover the groove.

8. The capacitor as claimed in claim 1, further comprising: Third electrode; and a second capacitor dielectric layer, wherein the second capacitor dielectric layer is disposed on the second electrode and is located between the second electrode and the third electrode.

9. An electronic device comprising: substrate; A redistribution structure is disposed on the substrate; A capacitor electrically connected to the redistribution structure, the capacitor including a first electrode, a second electrode, and a first capacitor dielectric layer disposed between the first electrode and the second electrode, the first capacitor dielectric layer including a first dielectric layer and a second dielectric layer, the first dielectric layer including an inorganic dielectric layer and the second dielectric layer including an organic dielectric layer, wherein the first dielectric layer is located between the first electrode and the second dielectric layer, and the second dielectric layer is located between the first dielectric layer and the second electrode, wherein the distribution area of ​​the first electrode, the second electrode, and the first capacitor dielectric layer is less than or equal to 50 micrometers x 50 micrometers, and the thickness of the organic dielectric layer is between 20 nanometers and 50 nanometers; and a wafer disposed on the redistribution structure and electrically connected to the redistribution structure.

10. The electronic device of claim 9, wherein the first dielectric layer has a first surface in contact with the second dielectric layer, the second dielectric layer has a second surface in contact with the second electrode, and the roughness of the first surface is greater than the roughness of the second surface.

11. The electronic device as claimed in claim 9, wherein the capacitor further comprises: A substrate, wherein the first electrode is disposed on the substrate, and the first capacitor dielectric layer and the second electrode are stacked on the first electrode.

12. The electronic device of claim 11, wherein the substrate has a recess, and the first electrode, the first capacitor dielectric layer and the second electrode cover the recess.

13. The electronic device of claim 11, wherein the substrate comprises: a first material layer; and a second material layer disposed on the first material layer.

14. The electronic device of claim 13, wherein the substrate has a recess that penetrates the second material layer and extends into a portion of the first material layer, and the first electrode, the first capacitor dielectric layer, and the second electrode cover the recess.

15. The electronic device of claim 13, wherein the substrate has a recess distributed in the second material layer, and the first electrode, the first capacitor dielectric layer and the second electrode cover the recess.

16. The electronic device as claimed in claim 9, wherein the capacitor further comprises: Third electrode; and a second capacitor dielectric layer, wherein the second capacitor dielectric layer is disposed on the second electrode and is located between the second electrode and the third electrode.

17. The electronic device as claimed in claim 9, wherein the capacitor is embedded in the rewiring structure.

18. The electronic device as claimed in claim 9, wherein the capacitor is disposed on the rewiring structure.

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