Display device

Abstract

This invention discloses a display. The display includes a light filter and a light-emitting module having multiple light-emitting chips. The light filter includes a substrate, a planarization light-shielding layer, and a pixel layer. The light filter includes multiple pixel regions corresponding to the light-emitting chips, and each pixel region includes a light-transmitting region and a light-shielding region. The planarization light-shielding layer is disposed on the substrate and is used to define the light-shielding region of the pixel region. The pixel layer is disposed on the planarization light-shielding layer and includes multiple pixel units. The pixel units overlap the light-transmitting regions and partially overlap the light-shielding regions of the pixel regions. In the pixel region, in the vertical projection direction, the area of ​​each pixel unit is larger than the area of ​​each light-emitting chip.

Description

Quantum dot color filter, display The present invention relates to a color filter, and particularly to a display using a quantum dot color filter. In the existing quantum dot color filter paired with a micro light-emitting diode, when the color filter layer is formed, it is easily affected by the contour below, causing the arranged position to shift, resulting in some micro light-emitting diodes not being covered by the color filter layer. Therefore, how to overcome the above-mentioned defects through the improvement of structural design has become one of the important issues to be solved in this field. The technical problem to be solved by the present invention is to provide a quantum dot color filter that can prevent incomplete display color conversion caused by offset, aiming at the deficiencies of the existing technology. To solve the above technical problem, one of the technical solutions adopted by the present invention is to provide a quantum dot color filter, display. The quantum dot color filter has a plurality of pixel regions respectively corresponding to a light-emitting module having a plurality of light-emitting wafers, and each pixel region includes a light-transmitting region and a light-blocking region. The quantum dot color filter includes a substrate, a planarized light-blocking layer, and a pixel layer. The planarized light-blocking layer is disposed on the substrate and is used to define the light-blocking region of each pixel region. The pixel layer is disposed on the planarized light-blocking layer and includes a plurality of pixel units. Among them, each pixel unit overlaps on the light-transmitting region and partially overlaps on the light-blocking region of each pixel region. Among them, in each pixel region, in the vertical projection direction, the first area of each pixel unit is larger than the second area of each light-emitting wafer. To solve the above technical problem, another technical solution adopted by the present invention is to provide a display, including: the quantum dot color filter and the light-emitting module as described in the above paragraph. The light-emitting module is disposed on the light-incident side of the quantum dot color filter. The light-emitting module includes a circuit substrate and light-emitting wafers. The light-emitting wafers are disposed on the circuit substrate. To enable a better understanding of the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the provided drawings are only for reference and illustration, and are not used to limit the present invention. The following is a description of the embodiments of the present invention related to "quantum dot color filters, displays" through specific examples. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific examples, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple schematic illustration and are not drawn according to actual dimensions, which is hereby stated in advance. The following embodiments will further detail the related technical content of the present invention, but the disclosed content is not used to limit the protection scope of the present invention. In addition, the term "or" used herein should be considered to include any one or a combination of more of the related listed items depending on the actual situation. [First Embodiment] FIG. 1 is a schematic cross-sectional view of a display according to a first embodiment of the present invention. FIGS. 2 and 3 are respectively a schematic cross-sectional view and a top view of a quantum dot color filter according to the first embodiment of the present invention. Referring to FIGS. 1 and 2, the display 1 includes a quantum dot color filter 10 and a light-emitting module 20. The quantum dot color filter 10 is disposed above the light-emitting module 20, and the quantum dot color filter 10 may include a substrate 11, a planarized light-shielding layer 12, and a pixel layer 13. Among them, the quantum dot color filter 10 has a plurality of pixel regions PX, which are arranged in an array form, for example. Each pixel region PX corresponds to each light-emitting chip 22 in the light-emitting module 20, and each pixel region PX includes a light-transmitting region TA and a light-shielding region SA. The light-transmitting region TA is surrounded by the light-shielding region SA and is preferably located in the middle region of each pixel region PX. The substrate 11 is a transparent substrate and can be selected from light-transmitting materials such as glass or plastic. The planarized light-shielding layer 12 is disposed on the substrate 11, and the planarized light-shielding layer 12 includes a light-transmitting region TA and a light-shielding region SA. In each pixel region PX, a light-shielding portion 120 is disposed corresponding to the light-shielding region SA and defines a light-transmitting opening, and a light-transmitting portion 121 is formed in the light-transmitting opening corresponding to the light-transmitting region TA of the pixel region PX. The light-shielding portion 120 can block light rays of different colors emitted from adjacent pixels. In the first embodiment, the light-transmitting portion 121 is made of a transparent photoresist material. And because the light-transmitting portion 121 fills the light-transmitting opening formed by the light-shielding portion 120, the planarized light-shielding layer 12 has a flat surface, which is beneficial for subsequent coating and film formation thereon. That is to say, the flat surface enables the subsequent pixel layer 13 disposed above the planarized light-shielding layer 12 to easily form a preset shape and is not affected by the contour below, especially when there is a large-area requirement. In this embodiment, the light-shielding portion 120 is made of a material with a high carbon black content, such as an oxide containing a black pigment. Furthermore, 5-25% carbon black particles are combined with silicon oxide, which can improve the light-shielding effect. And in order to overcome the problem that the film layer with a high carbon black ratio is not easy to be exposed, in this embodiment, the lift-off process is used to form the light-shielding portion 120, which can accurately control the thickness of the light-shielding portion 120, thereby improving the light-shielding effect. By means of a single exposure and development step combined with the lift-off process of the evaporation and stripping steps, the thickness of the light-shielding portion 120 can be accurately controlled within the range of 0.1 μm to 3 μm, and more preferably within the range of 0.5 μm to 2 μm. The thickness of the light-transmitting portion 121 adjacent to the light-shielding portion 120 is preferably the same as that of the light-shielding portion 120, thus forming a planarized light-shielding layer 12, so its thickness is also within the range of 0.1 μm to 3 μm, and more preferably within the range of 0.5 μm to 2 μm. As shown in FIG. 2, the pixel layer 13 is disposed on the planarized light-shielding layer 12 and has a plurality of pixel units 130, which respectively correspond to the pixel regions PX in position. In each pixel region PX, the corresponding pixel unit 130 can simultaneously overlap with the light-transmitting region TA and the light-shielding region SA; more precisely, in each pixel region PX, the pixel unit 130 can completely cover the corresponding light-transmitting region TA, but only partially overlap with the light-shielding region SA. The pixel unit 130 can cause the light emitted by the light-emitting module 20 to pass through the absorption, conversion or penetration of the corresponding pixel unit 130 to produce the desired light color. Furthermore, the pixel layer 13 includes a plurality of pixel units 130, namely a red pixel unit 131, a green pixel unit 132 and a blue pixel unit 133, and their arrangement positions are as shown in FIG. 2. The red pixel unit 131 corresponds to the red pixel region RPX, the green pixel unit 132 corresponds to the green pixel region GPX, and the blue pixel unit 133 corresponds to the blue pixel region BPX. Each pixel unit is arranged in sequence in the array of the light-transmitting region TA defined by the planarized light-shielding layer 12. Specifically, the red pixel unit 131 includes a red quantum dot layer 1311 and a red filter layer 1312, and the red filter layer 1312 is disposed between the red quantum dot layer 1311 and a light-transmitting portion 121 of the planarized light-shielding layer 12. The green pixel unit 132 includes a green quantum dot layer 1321 and a green filter layer 1322, and the green filter layer 1322 is disposed between the green quantum dot layer 1321 and another light-transmitting portion 121 of the planarized light-shielding layer 12. The blue pixel unit 133 includes a white photoresist layer 1331 and a blue filter layer 1332, and the blue filter layer 1332 is disposed between the white photoresist layer 1331 and yet another light-transmitting portion 121 of the planarized light-shielding layer 12. For example, the red light - filtering layer 1312 of the present invention includes materials such as propylene glycol monomethyl ether acetate (PGMEA) and heterocyclic compounds with red pigments. It filters the bands other than red light, allowing light in the 550 - 600 nm band to pass through, thus presenting red. The green light - filtering layer 1322 includes materials such as propylene glycol monomethyl ether acetate (PGMEA) and heterocyclic compounds with green pigments. It filters the bands other than green light, allowing light in the 450 - 550 nm band to pass through, thus presenting green. The blue light - filtering layer 1332 includes materials such as propylene glycol monomethyl ether acetate (PGMEA) and heterocyclic compounds with blue pigments. It filters the bands other than blue light, allowing light in the 350 - 450 nm band to pass through, thus presenting blue. Therefore, it can effectively avoid the problems of reduced display color gamut and color deviation caused by the mixed output of blue, red, and green light. In addition, the red quantum dot layer 1311 and the green quantum dot layer 1321 of the present invention each include II - VI, II - V, III - V, III - VI, IV, or IV - VI semiconductor materials. In a preferred embodiment of the present invention, the particle size range of the particles in the red quantum dot layer 1311 can be in the range of 7 nm to 10 nm, and the particle size range of the particles in the green quantum dot layer 1321 can be in the range of 3 nm to 5 nm. In a preferred embodiment of the present invention, the thickness of the pixel unit 130 can be in the range of 5 μm to 10 μm. The light - emitting module 20 includes a plurality of blue - light - emitting wafers. In the blue pixel region BPX, the blue pixel unit 133 is provided. That is, without changing the blue - light wavelength emitted by the light - emitting wafer, that is, without including a blue quantum dot layer, the blue light directly passes through the light - transmitting part 121 and is emitted to the human eye. While the red pixel unit 131 and the green pixel unit 132 need to pass through the quantum dot layers of the corresponding colors before being transmitted to the human eye. As a result, the intensity of the blue light received by the human eye is much greater than the intensities of the red and green lights, resulting in the overall color of the display 1 not being able to reach the ideal color. Therefore, in the embodiment, in order to make the intensities of the blue light and the red and green lights felt by the human eye the same, a white photoresist layer 1331 is provided on the blue light - filtering layer 1332. After the blue light emitted by the light - emitting module 20 passes through the diffusing particles in the white photoresist, the human eye will receive blue light with the same intensity as the red and green lights. In addition, in each pixel region PX, in the first direction D, the area of the pixel unit 130 is the first area A1, and the light - emitting area of each light - emitting wafer 22 is the second area A2. As shown in Figure 3, in each pixel region PX, the first area A1 of the pixel unit 130 is greater than the second area A2. Therefore, the pixel unit 130 of the present invention completely covers the light-emitting chip 22, ensuring that the light emitted by the light-emitting chip 22 will be converted or absorbed by the pixel unit 130. For example, when the area of the light-emitting chip 22 is 18x36μm 2 the size of the first area A1 of the pixel unit 130 can be in the range of 30x50μm 2 to 35x55μm 2 . More preferably, the first area A1 of the pixel unit 130 can be 2.3 times to 2.97 times the second area A2 of the light-emitting chip 22. In addition, the pixel unit 130 is in the shape of a rounded rectangle. A layer of atomic layer deposition (ALD) is coated on the pixel layer 13 as the protective layer 15 to prevent the moisture in the environment from affecting the stability of the quantum dot material layer and to extend the lifespan of the quantum dots. In this embodiment, there is a gap between any two adjacent pixel units 130, and the contour of the protective layer 15 is consistent with the surface contour of the pixel layer 13. The quantum dot color filter 10 of this embodiment is transposed and attached to the light-emitting module 20 to form a display 1, as shown in FIG. 1. The light-emitting module 20 of this embodiment includes a circuit board 21, a plurality of light-emitting chips 22, and a light-blocking structure 230. The plurality of light-emitting chips 22 are disposed on the circuit board 21 and can respectively correspond to the pixel regions PX in position. For example, the light-emitting chips 22 can be arranged in the form of an array similar to the pixel region PX and correspond to the pixel region PX in a one-to-one relationship. Among them, a light-blocking structure 230 is disposed between every two adjacent light-emitting chips 22, that is, the light-blocking structure 230 surrounds the light-emitting chip 22 and only exposes the light-emitting area of the light-emitting chip 22. The top surfaces of the plurality of light-emitting chips 22 and the top surfaces of the plurality of light-blocking structures 230 form a first planarized top surface. In some embodiments, the light-blocking structure 230 can be selected from a dark-colored glue material, and its thickness can be in the range of 4μm to 6μm. Among them, the light-blocking structure 230 can be formed on the circuit board 21 by means of exposure and development, spray capillary phenomenon, molding, or lamination. [Second Embodiment] Please refer to FIGS. 4 and 5. Another quantum dot color filter 10 according to the second embodiment of the present invention includes a substrate 11, a planarized light-blocking layer 12, a pixel layer 13, and a retaining wall structure 14. The pixel layer 13 and the retaining wall structure 14 are jointly disposed on the planarized light-blocking layer 12, and in each pixel region PX, the retaining wall structure 14 corresponds to the light-blocking region SA and surrounds the pixel unit 130. The red color filter layer 1312, the green color filter layer 1322, and the blue color filter layer 1332 respectively completely cover the corresponding light-transmitting regions TA, that is, are respectively disposed on the corresponding light-transmitting portions 121 of the planarized light-shielding layer 12, and the damascene structure 14 is disposed corresponding to the light-shielding portion 120. Then, the red quantum dot layer 1311, the green quantum dot layer 1321, and the white photoresist layer 1331 are respectively disposed on the red color filter layer 1312, the green color filter layer 1322, and the blue color filter layer 1332, that is, the damascene structure 14 surrounds the red pixel unit 131, the green pixel unit 132, and the blue pixel unit 133, and can provide a planarized surface, and a protective layer 15 is coated thereon. The damascene structure 14 is formed by a yellow light lithography process, and can be formed by using a white photoresist, a gray photoresist, a black photoresist, or a combination thereof. Further, it can be a light-reflecting or light-absorbing material or a micro-light-transmitting material. However, the present invention is not limited to the above examples. In this embodiment, since the damascene structure 14 uses a material with a lower carbon black content, it is easier to be exposed than a material with a higher carbon black content, so the thickness of the damascene structure 14 can be increased. The thickness DTH of the damascene structure 14 is preset to be greater than or equal to the thickness CTTH of the pixel layer 13. That is to say, the thickness DTH of the damascene structure 14 is greater than or equal to the sum of the thickness of the color filter layer and the thickness of the quantum dot layer. For example, the thickness of the damascene structure 14 is preferably in the range of 5 μm to 10 μm. And in the pixel region PX, the width of the damascene structure 14 is less than or equal to the width of the light-shielding portion 120. In FIG. 4, the damascene structure 14 further covers a part of the red color filter layer 1312, the green color filter layer 1322, and the blue color filter layer 1332. Preferably, the red quantum dot layer 1311, the green quantum dot layer 1321, and the white photoresist layer 1331 have the same width as the light-transmitting portion 121, then the damascene structure 14 has the same width as the light-shielding portion 120 and the same thickness as the pixel layer 13, which can effectively extend the light-shielding effect of the light-shielding portion 120, can block the wavelengths of red, green, and blue light, and solve the color crosstalk problem between adjacent pixels. In addition, as shown in FIG. 4, the light-emitting module 20 of this embodiment includes a circuit substrate 21, a plurality of light-emitting chips 22, a transparent protective layer 23, and a light-blocking structure 230. The plurality of light-emitting chips 22 are disposed on the circuit substrate 21 and are respectively positionally corresponding to the pixel regions PX. Therefore, the top surface of the light-emitting module 20 has a transparent protective layer 23, and between every two adjacent light-emitting chips 22, a light-blocking structure 230 can be further disposed in the transparent protective layer 23 and disposed around the light-emitting chip 22. Among them, the light-blocking structure 230 can be formed on the transparent protective layer 23 by means such as exposure and development, spraying capillary phenomenon, molding, or lamination. In this embodiment, the transparent protective layer 23 is first formed on the light-emitting chip 22 and the circuit substrate 21. Then, one or more accommodating spaces are recessed on the surface of the transparent protective layer 23, and the light-blocking structure 230 is filled in and disposed around the corresponding light-emitting chip 22. The thickness of the light-blocking structure 230 is not greater than the thickness of the transparent protective layer 23 and is greater than or equal to the thickness of the transparent protective layer 23. The thickness of the light-blocking structure 230 must be greater than or equal to half of the thickness of the light-emitting chip 22. Therefore, in this embodiment, the transparent protective layer 23 not only effectively improves the light-emitting brightness, but also the light-blocking structure 230 disposed around the light-emitting chip 22 can block the interference problem. The top surface of the transparent protective layer 23, the top surfaces of the plurality of light-emitting chips 22, and the top surfaces of the plurality of light-blocking structures 230 form a second planarized top surface, facilitating the assembly of the light-emitting module 20 and the quantum dot color filter 10. After the quantum dot color filter 10 is completed, it can be transposed and attached to the light-emitting module 20 to form the display 1. [Third Embodiment] FIG. 6 is a cross-sectional schematic diagram of the display of the third embodiment of the present invention. FIG. 7 is a cross-sectional schematic diagram of the quantum dot color filter of the third embodiment of the present invention. The third embodiment of the present invention further provides a display 1. As shown in FIG. 6, in the display 1, a planarized light-shielding layer 12 is formed on a substrate 11, and a light-transmitting portion 121 of the planarized light-shielding layer 12 uses a yellow photoresist material. Since the absorption wavelength range of the yellow photoresist material is 400 - 500 nm, it can effectively filter the blue light emitted from the light-emitting wafer but not exciting the quantum dot material, effectively removing the excess blue light. In a preferred embodiment of the present invention, the yellow photoresist is a mixture composed of propylene glycol monomethyl ether acetate, polyacrylic acid resin, and bismuth vanadium tetraoxide, wherein the weight percentage of bismuth vanadium tetraoxide is in the range of 5% to 20%. The yellow photoresist material not only has good adhesion on the glass substrate but also has the function of filtering blue light. In addition, in the third embodiment, due to the use of the yellow photoresist, the filter layer can be omitted in the subsequent process, and the red quantum dot layer 1311, the green quantum dot layer 1321, and the white photoresist layer 1331 are directly formed on the planarized light-shielding layer 12, so as to reduce the number of process steps, improve the production capacity, and reduce the production cost. [Advantageous effects of the embodiment] One of the advantageous effects of the present invention is that, compared with the traditional color filter, in the display having a quantum dot color filter provided by the present invention, since the coverage area A1 of the quantum dot layer and the filter layer of the present invention is larger than the light-emitting area A2 of the light-emitting wafer, the quantum dot layer and the filter layer can completely cover the light-emitting wafer. Furthermore, even when the quantum dot color filter is offset during the exposure and development process with the machine stage, resulting in a situation where the quantum dot layer and the filter layer cannot be aligned with the light-emitting wafer, because the coverage area of the quantum dot layer and the filter layer is larger than the light-emitting area of the light-emitting wafer, the light emitted by the light-emitting module 20 can still pass through the absorption or conversion of the corresponding pixel unit 130 to generate the expected display color. The content disclosed above is only the preferred feasible embodiment of the present invention, and does not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the content of the specification and drawings of the present invention are included in the scope of the patent application of the present invention. 1: Display 10: Quantum dot color filter 11: Substrate 12: Planarized light-shielding layer 120: Light-shielding portion 121: Light-transmitting portion 13: Pixel layer 130: Pixel unit 131: Red pixel unit 1311: Red quantum dot layer 1312: Red filter layer 132: Green pixel unit 1321: Green quantum dot layer 1322: Green filter layer 133: Blue pixel unit 1331: White photoresist layer 1332: Blue filter layer 14: Dam structure 15: Protective layer 20: Light-emitting module 21: Circuit board 22: Light-emitting chip 23: Transparent protective layer 230: Light-blocking structure PX: Pixel area TA: Translucent area SA: Light-shielding area RPX: Red pixel area GPX: Green pixel area BPX: Blue pixel area A1: Pixel area A2: Pixel area DTH, CTTH: Thickness FIG. 1 is a schematic cross-sectional view of a display according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a quantum dot color filter according to a first embodiment of the present invention. FIG. 3 is a schematic top view of a quantum dot color filter according to a first embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a display according to a second embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a quantum dot color filter according to a second embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a display according to a third embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a quantum dot color filter according to a third embodiment of the present invention. 1: Display 10: Quantum dot color filter 11: Substrate 12: Planarized light-shielding layer 13: Pixel layer 15: Protective layer 20: Light-emitting module 21: Circuit board 22: Light-emitting chip 23: Transparent protective layer 230: Light-blocking structure

Claims

1. A display, comprising: A light-emitting module, comprising: a circuit board; Multiple light-emitting chips are disposed on the circuit board; The light-emitting module comprises: a substrate; a planarization light-shielding layer disposed on the substrate for defining the light-shielding area of ​​each pixel region; and a pixel layer disposed on the planarization light-shielding layer and comprising a plurality of pixel units, wherein each pixel unit overlaps the light-transmitting area and partially overlaps the light-shielding area of ​​each pixel region; wherein, in each pixel region, in the vertical projection direction, the first area of ​​each pixel unit is larger than the second area of ​​each light-emitting chip; wherein the planarization light-shielding layer comprises: a light-shielding portion disposed to shield each light-shielding area and defining a plurality of light-transmitting openings; and a plurality of light-transmitting portions formed in the plurality of light-transmitting openings to correspond to the plurality of light-transmitting areas; wherein the light-emitting module is disposed on a light-incident side of the filter. The light-emitting module further includes a transparent protective layer disposed on the circuit substrate and the upper surface of the plurality of light-emitting chips. The plurality of light-blocking structures are located on the transparent protective layer, and the top surface of the transparent protective layer and the top surface of the plurality of light-blocking structures form a second planarized top surface.

2. The display as claimed in claim 1, wherein, Each of the light-transmitting parts includes a transparent photoresist material or a yellow photoresist material.

3. The display as claimed in claim 2, wherein the wavelength of light absorbed by the yellow photoresist material is in the range of 400 nanometers to 500 nanometers.

4. The display as claimed in claim 2, wherein the yellow photoresist material comprises propylene glycol monomethyl ether acetate, polyacrylic acid resin, and vanadium bismuth tetroxide.

5. The display as claimed in claim 2 further includes a barrier structure disposed above the planarization light-shielding layer, corresponding to the light-shielding area and surrounding each pixel unit.

6. The display as claimed in claim 5, wherein the thickness of the barrier structure is greater than or equal to the thickness of the pixel layer.

7. The display as claimed in claim 5, wherein, In each pixel area, the width of the barrier structure is less than or equal to the width of the light-shielding part.

8. The display as claimed in claim 5, wherein the barrier structure comprises white photoresist, gray photoresist, black photoresist, or a combination thereof.

9. The display as claimed in claim 2, wherein, The plurality of pixel regions include a plurality of red pixel regions, a plurality of green pixel regions, and a plurality of blue pixel regions, and the plurality of pixel units include a plurality of red pixel units corresponding to the plurality of red pixel regions, a plurality of green pixel units corresponding to the plurality of green pixel regions, and a plurality of blue pixel units corresponding to the plurality of blue pixel regions.

10. The display as claimed in claim 9, wherein, Each red pixel unit includes a red quantum dot layer, each green pixel unit includes a green quantum dot layer, and each blue pixel unit includes a white photoresist layer.

11. The display as claimed in claim 10, wherein each of the red pixel units further includes a red filter layer disposed between the red quantum dot layer and the planarization light-shielding layer, each of the green pixel units further includes a green filter layer disposed between the green quantum dot layer and the planarization light-shielding layer, and each of the blue pixel units further includes a blue filter layer disposed between the white photoresist layer and the planarization light-shielding layer.

12. The display as claimed in claim 11, wherein the red filter layer comprises propylene glycol monomethyl ether acetate (PGMEA) and a heterocyclic compound having a red pigment; the green filter layer comprises propylene glycol monomethyl ether acetate (PGMEA) and a heterocyclic compound having a green pigment; and the blue filter layer comprises propylene glycol monomethyl ether acetate (PGMEA) and a heterocyclic compound having a blue pigment.

13. The display as claimed in claim 10, wherein the particle size of the red quantum dot layer is in the range of 7 nanometers to 10 nanometers, and the particle size of the green quantum dot layer is in the range of 3 nanometers to 5 nanometers.

14. The display as claimed in claim 1, wherein the filter further includes a protective layer disposed above the pixel layer.

15. The display as claimed in claim 1, wherein the first area is in the range of 2 to 3.5 times the second area.

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