Adapters, substrate processing apparatus, substrate processing methods, manufacturing methods and processes for semiconductor devices

Abstract

This invention provides a technique for applying fastening force to a sealing surface without deviation. The present invention comprises: a metal port having a hole for inserting a mounting portion formed at one end of a pipe; a spacer configured to engage with a step portion provided at the front end of the mounting portion; a metal seal configured to seal the contact surface between the front end of the mounting portion and the metal port; and a nut having an inner diameter through which the mounting portion can be inserted, which screws into the metal port to press the spacer against the metal port side; the spacer is divided into a plurality of arcs, forming an annular shape and disposed in the step portion, and has a positioning mechanism that does not require adjustment of the positioning around the axis of the pipe.

Description

Adapter, Substrate Processing Apparatus, Substrate Processing Method, Method for Manufacturing Semiconductor Device, and Program The present invention relates to an adapter (interface converter), a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a program. As one step in the manufacturing process of a semiconductor device, there is a process of forming a film on the surface of a substrate by supplying a processing gas from a nozzle disposed in a reaction tube (for example, refer to Patent Document 1 and Patent Document 2). [Prior Art Documents] [Patent Documents] Patent Document 1: Japanese Patent Laid-Open No. 2009-224765 Patent Document 2: International Publication No. 2022 / 059628 Pamphlet (Problems to be Solved by the Invention) In a reaction tube, a pipe made of a brittle material may be fastened to a pipe made of a different type of material. When the clamping force is reduced in order not to break the pipe made of the brittle material, there is a case of gas leakage. When the clamping force is increased in order not to cause gas leakage or to reduce gas leakage, there is a case where the pipe made of the brittle material may be broken. The present invention provides a technique for applying a clamping force to a sealing surface without deviation. (Technical Means for Solving the Problem) According to one aspect of the present invention, there is provided a technique including: a metal port having a hole into which a mounting portion formed at one end of a pipe can be inserted; a spacer configured to engage with a step portion provided on the front end side of the mounting portion; a metal seal configured to seal between the front end of the mounting portion and the contact surface of the metal port; and a nut having an inner diameter through which the mounting portion can be inserted, which is screwed with the metal port to press the spacer against the metal port side; the spacer is divided into a plurality of arc shapes, is arranged in a ring shape as a whole on the step portion, and has a positioning mechanism that does not require adjustment of the positioning around the axis of the pipe. (Effects Compared with the Prior Art) According to the present invention, a clamping force can be applied to the sealing surface without deviation. <One Aspect of the Present Invention> Hereinafter, one aspect of the present invention will be mainly described with reference to FIGS. 1 to 7. Furthermore, the drawings used in the following description are all schematic, and the dimensional relationships of the respective elements shown in the drawings, the ratios of the respective elements, etc. are not necessarily the same as the actual ones. In addition, among a plurality of drawings, the dimensional relationships of the respective elements, the ratios of the respective elements, etc. are not necessarily the same. (1) Configuration of the substrate processing apparatus As shown in FIG. 1, the processing furnace 202 has a heater 207 as a heating system (temperature adjustment unit). The heater 207 is cylindrical in shape and is vertically installed by being supported on a holding plate. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) a gas with heat. Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and is formed in a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal material such as stainless steel (SUS), and is formed in a cylindrical shape with open upper and lower ends. The upper end portion of the manifold 209 is configured to engage with the lower end portion of the reaction tube 203 and support the reaction tube 203. An O-ring 220a as a sealing member is provided between the manifold 209 and the reaction tube 203. The reaction tube 203 is vertically installed in the same manner as the heater 207. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the cylindrical hollow portion of the processing container. The processing chamber 201 is configured to accommodate a wafer 200 as a substrate. Processing of the wafer 200 is performed in the processing chamber 201. Inside the processing chamber 201, nozzles 249a, 249b of a first pipe for injecting a processing gas into the processing chamber 201 of the substrate processing apparatus are arranged to extend in the vertical direction. Gas supply pipes 232a, 232b of a second pipe are respectively connected to the nozzles 249a, 249b. The nozzles 249a, 249b are made of a heat-resistant material such as quartz or SiC and are brittle material tubular (also referred to as pipe-shaped) pipes. On the gas supply pipes 232a, 232b, mass flow controllers (MFCs) 241a, 241b as flow controllers (flow control units) and valves 243a, 243b as on-off valves are respectively provided in order from the upstream side. Gas supply pipes 232c, 232d for supplying an inert gas are respectively connected to the gas supply pipes 232a, 232b on the more downstream side than the valves 243a, 243b. On the gas supply pipes 232c, 232d, MFCs 241c, 241d and valves 243c, 243d are respectively provided in order from the upstream side. The nozzles 249a and 249b are respectively arranged to stand upright upward in the stacking direction of the wafer 200 from the lower part to the upper part along the inner wall of the reaction tube 203 in a space that is annular in a plan view between the inner wall of the reaction tube 203 and the wafer 200. On the side surfaces of the nozzles 249a and 249b, gas supply holes 250a and 250b, which are supply ports for supplying gas, are respectively provided. The gas supply holes 250a and 250b are provided with a plurality of them extending from the lower part to the upper part of the reaction tube 203. From the gas supply pipe 232a, a source gas containing a predetermined element of the process gas is supplied into the processing chamber 201 through the MFC 241a, the valve 243a, and the nozzle 249a. From the gas supply pipe 232b, a reaction gas that reacts with the source gas of the process gas is supplied into the processing chamber 201 through the MFC 241b, the valve 243b, and the nozzle 249b. From the gas supply pipes 232c and 232d, an inert gas of the process gas is respectively supplied into the processing chamber 201 through the MFC 241c, 241d, the valves 243c, 243d, the gas supply pipe 232a, the gas supply pipe 232b, the nozzle 249a, and the nozzle 249b. The inert gas supplied from the gas supply pipes 232c and 232d is used as a dilution gas for diluting the source gas when supplied simultaneously with the source gas. The source gas supply system mainly consists of the gas supply pipe 232a, the MFC 241a, and the valve 243a. The reaction gas supply system mainly consists of the gas supply pipe 232b, the MFC 241b, and the valve 243b. The source gas supply system and the reaction gas supply system can also be collectively referred to as the process gas supply system. In addition, the inert gas supply system mainly consists of the gas supply pipes 232c and 232d, the MFC 241c, 241d, the valves 243c, 243d. The inert gas supply system can also be included in the process gas supply system. In any one or all of the above various supply systems, they can also be configured as an aggregated supply system 248 in which the valves 243a to 243d, the MFCs 241a to 241d, etc. are aggregated. The aggregated supply system 248 is configured to be connected to each of the gas supply pipes 232a to 232d, and controls the supply operation of various gases into the gas supply pipes 232a to 232d, that is, the opening and closing operations of the valves 243a to 243d or the flow rate adjustment operations performed by the MFCs 241a to 241d, etc., by the controller 121 described later. The aggregated supply system 248 can be configured as an integrated type or a split type aggregated unit, which can be disassembled and assembled in units of the aggregated unit with respect to the gas supply pipes 232a to 232d, etc., and is configured to perform maintenance, replacement, addition, etc. of the aggregated supply system 248 in units of the aggregated unit. In reaction tube 203, an exhaust pipe 231 for exhausting the ambient gas in the exhaust treatment chamber 201 is provided. In the exhaust pipe 231, a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the treatment chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure regulation unit) are connected to a vacuum pump 246 as a vacuum exhaust device. The APC valve 244 opens and closes the valve in a state where the vacuum pump 246 is operating, whereby vacuum exhaust and stop of vacuum exhaust in the treatment chamber 201 can be performed. Further, it is configured such that, in a state where the vacuum pump 246 is operating, the valve opening degree is adjusted according to the pressure information detected by the pressure sensor 245, whereby the pressure in the treatment chamber 201 can be adjusted. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be included in the exhaust system. Below the manifold 209, a sealing cover 219 is provided to airtightly seal the lower end opening of the manifold 209 as a furnace port cover. The sealing cover 219 is formed of a metal such as SUS, for example, and is formed in a disk shape. On the upper surface of the sealing cover 219, an O-ring 220b as a sealing member that abuts against the lower end of the manifold 209 is provided. Below the sealing cover 219, a rotation mechanism 267 for rotating a susceptor 217 described later is provided. The rotation shaft 255 of the rotation mechanism 267 passes through the sealing cover 219 and is connected to the susceptor 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the susceptor 217. The sealing cover 219 is configured to move up and down in the vertical direction by a susceptor elevator 115 as a lifting mechanism provided outside the reaction tube 203. The susceptor elevator 115 is configured to be able to carry the susceptor 217 into and out of the treatment chamber 201 by moving the sealing cover 219 up and down. The susceptor elevator 115 is configured as a transfer device (transfer mechanism) for transferring the susceptor 217, that is, the wafer 200, into and out of the treatment chamber 201. The susceptor 217 as a substrate support is configured to support a plurality of wafers 200, for example, 25 to 200 wafers, in a horizontal posture and in a state where their centers are aligned with each other, vertically aligned, that is, arranged at intervals. The susceptor 217 is formed of a heat-resistant material such as quartz or SiC, for example. Below the susceptor 217, a heat insulating plate 218 formed of a heat-resistant material such as quartz or SiC is supported in multiple stages. Further, in this specification, the description of a numerical range such as "25 to 200 pieces" means that the lower limit value and the upper limit value are included in the range. Therefore, for example, "25 to 200 pieces" means "25 pieces or more and 200 pieces or less". The same applies to other numerical ranges. Inside the reaction tube 203, a temperature sensor 263 serving as a temperature detector is provided. Based on the temperature information detected by the temperature sensor 263, the energization state of the heater 207 is adjusted, thereby making the temperature in the processing chamber 201 the desired temperature distribution. The temperature sensor 263 is configured in an L shape and is provided along the inner wall of the reaction tube 203. Next, the connection structure between the gas supply pipe 232a and the nozzle 249a will be described with reference to FIGS. 2 to 5. Furthermore, since the connection structure between the gas supply pipe 232a and the nozzle 249a is the same as that between the gas supply pipe 232b and the nozzle 249b, in the following description, the gas supply pipe 232a and the nozzle 249a, and the gas supply pipe 232b and the nozzle 249b will be described as the gas supply pipe 232 and the nozzle 249. The gas supply pipe 232 is provided to penetrate the side wall of the manifold 209, and its end is erected to form an L shape. The nozzle 249 is entirely formed of a pipe and is configured to eject gas from the gas supply hole 250 in the length direction (the wafer arrangement direction). The nozzle 249 has an installation portion 249p formed in a straight pipe shape (also referred to as a cylindrical shape) at one end, and is configured such that the installation portion 249p is inserted (also referred to as connected) into the adapter 300. The nozzle 249 is configured to be connected to the front end of the gas supply pipe 232 via the adapter 300. In a state where the nozzle 249 is connected to the gas supply pipe 232 via the adapter 300, the gas supplied to the gas supply pipe 232 is supplied to the nozzle 249 via the tubular gas flow path formed in the adapter 300 and is supplied to the processing chamber 201 via the gas supply hole 250. That is, one end of the nozzle 249 is used as the installation portion 249p inserted into the metal port 301. The installation portion 249p is composed of a circular pipe having a fixed outer diameter. The front end of the installation portion 249p is convex, and a flange 401, which is an outward flange, is formed at the front end of the installation portion 249p. The flange 401 is used as a step portion for the spacer 303 described later to abut against. The flange 401 is formed such that its diameter expands toward the front end side of the installation portion 249p. That is, the front end side of the installation portion 249p is formed such that the outer diameter becomes larger than the inner diameter. Thereby, the spacer 303 can be engaged with the flange 401 of the installation portion 249p, and the operator can position the direction of the nozzle 249 without deviation. Furthermore, the front end of the installation portion 249p may also be conical instead of the stepped shape of the step portion. In addition, a notch 402 is formed in a planar shape on the upper part of the flange 401 of the installation portion 249p and on a part of the outer peripheral surface of the installation portion 249p. The adapter 300 is composed of a metal port 301 installed at the end of the gas supply pipe 232, a metal seal 302, a spacer 303, and a nut 304 screwed onto the metal port 301 to press the spacer 303 toward the metal port 301 side. The metal seal 302 is, for example, an annular sealing member (also called a seal member) made of metal with a C-shaped or W-shaped cross-sectional shape and having appropriate elasticity, heat resistance, corrosion resistance, airtightness, etc. Figure 3 is a cross-sectional view showing the state where the installation portion 249p of the nozzle 249 is installed in the adapter 300. A hole 3011 is formed in the metal port 301. The flange 401 of the installation portion 249p can be inserted into the hole 3011, and the hole 3011 communicates with the gas supply pipe 232. The hole 3011 has an insertion area 3012 that can receive the installation portion 249p and has a fixed inner diameter L1, a connection area 3013 that is provided on the upstream side of the insertion area 3012 and has an opening with an inner diameter L2 smaller than the inner diameter L1, and a connection area 3014 that is provided on the upstream side of the connection area 3013 and has an opening with an inner diameter L3 smaller than the inner diameter L2. The inner diameter L1 is configured to be larger than the outer diameter of the installation portion 249p, and the inner diameter L2 is preferably equal to the inner diameter of the installation portion 249p. In other words, the hole 3011 has a step 3015 where the inner diameter L1, which is larger than the outer diameter of the flange 401 at the front end of the installation portion 249p, changes to the inner diameter L2, which is smaller than the outer diameter of the flange 401 at the front end of the installation portion 249p, and a step 3016 where the inner diameter changes from L2 to L3. The steps 3015 and 3016 are formed on concentric circles within the hole 3011. In addition, the flange 401 of the installation portion 249p has a pressing surface 4011 that is substantially perpendicular to the central axis of the installation portion 249p, an end surface 4012 that is substantially parallel to the central axis of the installation portion 249p, and a lower end surface 4013 that is substantially parallel to the pressing surface 4011 and is flat. The flange 401 is used as a stepped portion having the same inner diameter as the installation portion 249p and an outer diameter larger than the outer diameter of the installation portion 249p. Therefore, it can make the spacer 303 slide smoothly. Thereby, when the nozzle 249 is installed on the gas supply pipe 232, the inclination or change of the nozzle 249 can be reduced. That is, the inner diameter L1 of the hole 3011 in the insertion area 3012 is larger than the outer diameter of the flange 401, and the inner diameter L2 of the hole 3011 (i.e., the opening 3018) in the connection area 3013 is smaller than the outer diameter of the flange 401 and is formed to be substantially the same as the inner diameter of the installation portion 249p. That is to say, the holes 3011 in the insertion area 3012, the connection area 3013, and the connection area 3014 are used as gas flow paths, one end of which communicates with the gas supply pipe 232 and the other end of which communicates with the nozzle 249. The surface 3017 is the bottom of the hole 3011 in the insertion area 3012 and is the upper surface of the step difference 3015, which is formed flat. At the center of the surface 3017, an opening 3018 communicating with the gas supply pipe 232 is provided. The metal seal 302 is placed on the surface 3017 and is configured to seal between the periphery of the opening 3018 and the front end of the mounting portion 249p. That is, the metal seal 302 is configured to seal between the contact surface of the front end of the mounting portion 249p and the metal port 301. In other words, the metal seal 302 is configured to seal between the lower end surface 4013 of the mounting portion 249p and the surface 3017 of the insertion area 3012. That is, the front end of the mounting portion 249p does not contact the metal port 301 and is configured to abut against the surface 3017 inside the hole 3011 of the metal port 301 via the metal seal 302. In addition, a part of the edge of the hole 3011 is formed in the insertion area 3012 of the metal port 301, and a plurality of notches 3013 (4 in FIG. 2) are formed. In addition, an external thread 3019 coaxial with the hole 3011 is provided on the outer peripheral surface of the metal port 301 around the hole 3011 from the insertion area 3012 to the connection area 3013. The nut 304 is a socket nut. The nut 304 has: an inner peripheral surface 3041 having an inner diameter L4 through which the mounting portion 249p can be inserted and larger than the outer diameter of the flange 401; an inner peripheral surface 3042 coaxial with the inner peripheral surface 3041 and having an inner diameter L5, which is larger than the inner diameter L4 of the inner peripheral surface 3041 and has a dimensional tolerance with the external thread 3019 of the metal port 301; a surface 3043 connecting these inner peripheral surfaces substantially perpendicularly to the inner peripheral surface 3041 and the inner peripheral surface 3042; and a female thread 3044 formed on the inner peripheral surface 3042 and screwed with the external thread 3019 of the metal port 301. In a state where the spacer 303 is engaged with the flange 401, the surface 3043 of the nut 304 abuts against the upper surface of the spacer 303, and the female thread 3044 of the nut 304 is screwed with the external thread 3019 of the metal port 301 to press the spacer 303 toward the metal port 301 side. Therefore, the nozzle 249 can be connected to the gas supply pipe 232 in a space-saving manner. The outer peripheral surface 2491 of the mounting portion 249p and the inner peripheral surface 3041 of the nut 304 are fitted with a gap therebetween at a predetermined interval d1. That is, the spacer 303 is provided so that the outer peripheral surface 2491 of the mounting portion 249p and the inner peripheral surface 3041 of the nut 304 are separated by a predetermined amount (here d1) to prevent the adapter 300 and the mounting portion 249p from coming into contact with each other. Therefore, it is possible to prevent the nozzle 249 or the metal seal 302 from rotating, and it is possible to prevent scratches from being caused to the nozzle 249 or the metal seal 302 due to the rotation of the nozzle 249 or the metal seal 302. FIG. 4(A) is a view of the spacer 303 observed obliquely from above, and FIG. 4(B) is a view of the spacer 303 observed obliquely from below. The spacer 303 is configured to be divided into a plurality of arc shapes (two divisions in FIGS. 4(A) and 4(B), also referred to as a half-cut structure), and the whole forms an annular shape. Thus, by being configured to be divided into a plurality of parts, its operability is good, and the spacer 303 can be provided without being limited by the shape of the nozzle 249. The spacer 303 has: an inner peripheral surface 3031 that abuts against the outer peripheral surface of the mounting portion 249p; a surface 3032 that abuts against the pressing surface 4011 of the flange 401; and an inner peripheral surface 3033 that abuts against the end surface 4012 of the flange 401. Moreover, the spacer 303 is engaged with the flange 401 on the flange 401 of the mounting portion 249p of the nozzle 249, and the spacer 303 is configured to be fitted with a gap at a predetermined fitting tolerance in the hole 3011 in the insertion region 3012. The corner portions of the spacer 303 are formed in an R shape. Thereby, it is possible not to cause scratches to the abutting members. In addition, the spacer 303 is provided with a plurality of (four in FIGS. 4(A) and 4(B)) first protrusions 3034 that protrude toward the outer peripheral side. In addition, on the inner peripheral surface 3031 of the spacer 303, a second protrusion 3035 that protrudes linearly toward the inner peripheral side is formed. As shown in FIG. 5, each of the first protrusions 3034 is configured to be engaged (inserted) with the notch 3013 of the metal port 301. The division of the spacer 303 and the arrangement of the first protrusions 3034 are configured to have rotational symmetry of two or more times (that is, have 180-degree rotational symmetry) (four-fold symmetry in FIGS. 4(A) and 4(B), that is, have 90-degree rotational symmetry). Thereby, the tightening force from the nut 304 can be evenly applied to the sealing surface. In addition, the weight of the nozzle 249 itself or the load during gas supply can be evenly dispersed to the spacer 303, and the inclination or pulling of the nozzle 249 can be suppressed. In addition, the second protrusion 3035 is configured to engage with a notch 402 formed in a part of the outer peripheral surface of the mounting portion 249p. The notch 402 is formed to have a gap in a state where the second protrusion 3035 is engaged. Thus, by forming the gap, it can suppress the vertical晃动 of the nozzle 249. In addition, even if the aging deformation of the metal seal 302 increases, it can be limited within a predetermined range. The first protrusion 3034 and the second protrusion 3035 are used as a positioning mechanism that does not require adjustment of the positioning (also known as phase determination) around the axis of the nozzle 249. Thereby, the position (orientation) of the gas supply hole 250 of the nozzle 249 can be positioned. For example, the processing gas can be supplied toward the center of the wafer 200 through the gas supply hole 250. Therefore, the operator can position the direction of the nozzle 249 without deviation. In a state where the metal seal 302 is placed on the surface 3017 of the metal port 301, the mounting portion 249p of the nozzle 249 is inserted into the insertion area 3012 of the metal port 301. Then, the first protrusion 3034 of the spacer 303 is engaged with the notch 3013 of the metal port 301, and the spacer 303 is provided on the flange 401. At this time, the metal seal 302 is disposed between the lower end surface 4013 of the flange 401 and the surface 3017 inside the metal port 301. The contact of the metal seal 302 with the flange 401 is located at the front end of the flange 401, and it only occurs in a region corresponding to the outside of the inner diameter of the flange 401 and the inside of the outer diameter of the flange 401. In addition, since the mounting portion 249p is fixed to the metal port 301 via the spacer 303, the metal seal 302 disposed between the front end of the mounting portion 249p and the contact surface of the metal port 301 does not rotate due to the rotational force of the nut 304. Furthermore, the nut 304 is screwed onto the male thread 3019 of the metal port 301. When the nut 304 is tightened by screwing, the deformation amount of the metal seal 302 is set to close the contact surface between the front end of the mounting portion 249p and the metal port 301. Thereby, the tightening force caused by the nut 304 can be applied to the sealing surface without deviation. At this time, the metal seal 302 is deformed by the combined force of the weight of the nozzle 249 itself and the pressing force from the nut 304. In addition, when the metal seal 302 closes the space between the front end of the mounting portion 249p and the surface 3017 of the metal port 301, the reaction force of the metal seal 302 is more than twice the gravity applied to the nozzle 249. Since the nozzle 249 is disposed to extend in the vertical direction, the direction of the gravity applied to the nozzle 249 is substantially the same as the tube axis of the mounting portion 249p. Here, when the self-weight of the nozzle 249 is set to, for example, 1 kg = 9.8 N, the fastening pressure of the metal seal 302 is 1 to 15 N / mm 2 or so. For example, when the fastening pressure of the metal seal 302 is set to 3 N / mm 2 , when the diameter of the front end of the nozzle 249 is set to 20 mm and the effective width of the metal seal 302 is set to 1 mm, the reaction force of the metal seal 302 becomes 188 N, which is about 19 times the self-weight applied to the nozzle 249. That is, the flange 401 of the nozzle 249 is strongly pressed by the upper spacer 303. Furthermore, the straightness of the nozzle 249 is determined by the flatness of the flange 401 and the flatness of the spacer 303. In this way, in a state where the mounting portion 249p of the nozzle 249 is mounted on the adapter 300, the metal seal 302 is provided so as to close between the lower end surface 4013 of the mounting portion 249p and the surface 3017 of the insertion region 3012. In addition, by means of the spacer 303, the up-and-down movement and rotation of the nozzle 249 are restricted, and the direction of the nozzle 249 in the processing chamber 201 is positioned. That is, the direction of the gas ejected from the gas supply hole 250 into the processing chamber 201 is adjusted. As described above, since the metal seal 302 is provided so as to close between the lower end surface 4013 of the mounting portion 249p and the surface 3017 of the insertion region 3012, it can connect the nozzle 249 to the gas supply pipe 232 without rotating the nozzle 249 and the metal seal 302. That is, it can prevent the rotation of the metal seal 302 or the nozzle 249 and prevent scratches from occurring during installation. In addition, by engaging the notch 402 of the nozzle 249 with the second protrusion 3035 of the spacer 303, it can easily position the nozzle 249. In addition, it can apply an appropriate fastening force to the sealing surface without deviation, can suppress damage to the piping, and can suppress gas leakage. In addition, it can prevent the nozzle 249 from coming into direct contact with the metal port 301. Thereby, breakage of the brittle material, that is, the nozzle 249, can be suppressed, and generation of particles due to breakage can be prevented. Furthermore, it can improve the airtightness in the nozzle 249 and in the gas flow path of the metal port 301. In addition, it can also suppress leakage caused by the floating of the nozzle 249 during high-flow and high-pressure supply. In addition, since the metal seal 302 is used, compared with an O-ring made of synthetic resin, its deterioration due to heat is less, and the adapter 300 can be maintained at a high temperature and adhesion of reaction by-products can be suppressed. As shown in FIG. 6, the controller 121 of the control unit (control means) is composed of a computer, that is, it has a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a memory device 121c, and an I / O port 121d. The RAM 121b, the memory device 121c, and the I / O port 121d can exchange data with the CPU 121a via an internal bus 121e. In the controller 121, for example, an input / output device 122 configured as a touch panel or the like is connected. The memory device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. In the memory device 121c, a control program for controlling the operation of the control board processing device, a process recipe such as the procedure or conditions of the film forming process described later, etc. are recordably stored and can be read out. The process recipe is combined with a program that enables the controller 121 to execute each procedure in the film forming process described later and obtain a predetermined result to function. Hereinafter, the process recipe, the control program, etc. are integrated and also simply referred to as a program. In addition, the process recipe is also simply referred to as a recipe. When using the term "program" in this specification, it may include only the recipe alone, only the control program alone, or include both of them. The RAM 121b is configured as a memory area (working area) that temporarily holds programs or data read out by the CPU 121a. The I / O port 121d is connected to the above-mentioned MFCs 241a to 241d, valves 243a to 243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, rotation mechanism 267, susceptor elevator 115, etc. The CPU 121a is configured to read out the control program from the memory device 121c and execute it, and read out the recipe from the memory device 121c according to the input of an operation instruction from the input / output device 122, etc. The CPU 121a is configured to control, according to the content of the read-out recipe: the flow rate adjustment actions of various gases performed by the MFCs 241a to 241d, the opening and closing actions of the valves 243a to 243d, the opening and closing actions of the APC valve 244 and the pressure adjustment action of the APC valve 244 according to the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment action of the heater 207 according to the temperature sensor 263, the rotation and rotation speed adjustment actions of the susceptor 217 performed by the rotation mechanism 267, the lifting action of the susceptor 217 performed by the susceptor elevator 115, etc. The controller 121 is constituted by installing the above-mentioned program recorded and stored in an external memory device (such as a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory) 123 on a computer. The memory device 121c or the external memory device 123 is constituted by a computer-readable recording medium. Hereinafter, the integration of these is also simply referred to as a recording medium. When using the term "recording medium" in this specification, it includes only the case of the memory device 121c alone, only the case of the external memory device 123 alone, or the case including both of them. Furthermore, the program may be provided to the computer without using the external memory device 123, but by using communication means such as the Internet or a dedicated line. (2) Substrate processing step Hereinafter, an example of the timing for forming a film containing a predetermined element on a wafer 200 in a step of substrate processing in a method for manufacturing a semiconductor device (such as an IC, etc.) using the above-mentioned substrate processing apparatus will be described with reference to FIG. 7. In the following description, the operations of each part constituting the substrate processing apparatus are controlled by the controller 121. In this specification, the term "wafer" is intended to mean the wafer itself or a laminate of the wafer and a predetermined layer or film formed on its surface. The term "surface of the wafer" in this specification is intended to mean the surface of the wafer itself or the surface of a predetermined layer or the like formed on the wafer. In this specification, the case where it is described that "a predetermined layer is formed on the wafer" is intended to mean the case where the predetermined layer is directly formed on the surface of the wafer itself or the case where the predetermined layer is formed on the layer or the like formed on the wafer. In this specification, the case of using the term "substrate" is the same as the case of using the term "wafer". In the substrate loading step S110, a plurality of wafers 200 are loaded into the boat 217 (wafer loading). Then, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201 (boat loading). In this state, the seal cover 219 is in a state of sealing the lower end of the manifold 209 via the O-ring 220b. Next, in the pressure adjustment step S120, the environmental gas in the processing chamber 201 is exhausted to make the pressure (vacuum degree) in the processing chamber 201 the desired one. At this time, the pressure in the processing chamber 201 is measured, and the opening degree of the APC valve 244 provided in the exhaust pipe 231 is feedback-controlled based on the measured pressure. The pressure adjustment step S120 is continued until the film formation step S140 ends. Next, in the temperature adjustment step S130, heating is performed by the heater 207 to make the temperature in the processing chamber 201 the desired temperature. At this time, based on the temperature information detected by the temperature sensor 263, feedback control is performed on the energization state of the heater 207 so that the desired temperature distribution is achieved in the processing chamber 201. Also, the susceptor 217 is rotated by the rotation mechanism 267 to rotate the wafer 200. The temperature adjustment step S130 is continued until the film formation step S140 ends. The temperature adjustment step S130 and the pressure adjustment step S120 can start in either order. Next, in the film formation step S140, gas is supplied to the wafer 200 to form a desired film. For example, a source gas is continuously or alternately supplied from the gas supply pipe 232a through the nozzle 249a, and a reaction gas is supplied from the gas supply pipe 232b through the nozzle 249b, and they are exhausted from the processing chamber 201 through the exhaust pipe 231. The source gas and the reaction gas supplied to the processing chamber 201 and exposed react with each other in the gas phase or on the surface of the wafer 200 to form a desired film on the wafer 200. Next, in the temperature reduction step S150, depending on the need, the temperature adjustment in the step S130 that has been continuously performed during the film formation process is stopped, or the temperature is reset to a lower value, so that the temperature in the processing chamber 201 gradually decreases. Next, in the atmospheric pressure recovery step S160, the opening of the APC valve 244 is reduced or fully closed, and a purge gas is supplied to the processing chamber 201 until the pressure in the processing chamber 201 becomes atmospheric pressure. The purge gas is, for example, N 2 gas, which can be supplied to the processing chamber 201 through the gas supply pipes 232c, 232d. Furthermore, this step S160 can also start immediately after the film formation step S140 ends. The temperature reduction step S150 and the atmospheric pressure recovery step S160 can be performed in parallel, or the start order can be exchanged. Finally, in the substrate unloading step S170, the wafer 200 on which the film has been formed is unloaded from the processing chamber 201 by a procedure opposite to the substrate loading step S110. (3) Modification Example Next, a modification example of the above adapter will be described with reference to FIG. 8. FIG. 8 is a cross-sectional view showing the state in which the mounting portion 249p of the nozzle 249 is mounted on the adapter 500. Furthermore, in FIG. 8, components that are substantially the same as those described in FIG. 3 are given the same reference numerals, and their descriptions are omitted. The adapter 500 in this modification example is composed of a metal port 501, a metal seal 302, a spacer 503, and a nut 504 that is screwed onto the metal port 501 and presses the spacer 503 toward the metal port 501 side. In this modification example, the front end of the mounting portion 249p of the nozzle 249 has a concave shape, and a groove 403 is formed around the periphery near the front end of the mounting portion 249p. A notch 402 is formed in a planar shape on the upper part of the groove 403 and is a part of the outer peripheral surface of the mounting portion 249p. A hole 5011 is formed in the metal port 501. The hole 5011 can receive the mounting portion 249p and is connected to the gas supply pipe 232. The hole 5011 has: an insertion region 5012, which can receive the mounting portion 249p and has a fixed inner diameter D1; an insertion region 5013, which is provided on the upstream side of the insertion region 5012 and has an opening with an inner diameter D2 that can receive the mounting portion 249p and is smaller than the inner diameter D1 as the first inner diameter; a connection region 5014, which is provided on the upstream side of the insertion region 5013 and has an opening with an inner diameter D3 that is smaller than the inner diameter D2 as the second inner diameter; a connection region 5015, which has an opening with an inner diameter D4 that is smaller than the inner diameter D3 as the third inner diameter; and a connection region 5016, which has an inner diameter larger than the inner diameter D4. It is configured such that the inner diameter D2 is larger than the outer diameter of the mounting portion 249p, the inner diameter D3 is smaller than the outer diameter of the mounting portion 249p, and is larger than the inner diameter of the mounting portion 249p. In other words, the hole 5011 of the metal port 501 has: a step 5017, which changes from an inner diameter D1 larger than the outer diameter of the front end of the mounting portion 249p to an inner diameter D2 smaller than the inner diameter D1 and larger than the outer diameter of the front end of the mounting portion 249p; a step 5018, which, as the second step, changes from the inner diameter D2 to an inner diameter D3 smaller than the outer diameter of the front end of the mounting portion 249p; and a step 5019, which, as the third step, changes from the inner diameter D3 to an inner diameter D4 smaller than the inner diameter D3. The metal seal 302 is disposed between the step 5018 and the step 5019. In addition, the inner diameter D4 is formed to be substantially the same as the inner diameter of the mounting portion 249p. In addition, the steps 5017 to 5019 are formed on concentric circles within the hole 5011. The groove 403 of the mounting portion 249p has a pressing surface 4031 substantially perpendicular to the central axis of the mounting portion 249p and an outer surface 4032 substantially parallel to the central axis of the mounting portion 249p. In addition, at the front end of the mounting portion 249p, there is a lower end surface 2492 that is substantially parallel to the pressing surface 4031 and is flat. In addition, the upper surface of the step 5019, that is, the surface 5021, is formed to be flat. The metal seal 302 is placed on the surface 5021 and is configured to seal between the periphery of the opening 5022 in the connection area 5015 and the front end of the mounting portion 249p. That is, the metal seal 302 is configured to seal between the front end of the mounting portion 249p and the contact surface of the metal port 501. In other words, the metal seal 302 is configured to seal between the lower end surface 2492 of the mounting portion 249p and the surface 5021 in the connection area 5014. That is, the front end of the nozzle 249 is configured not to contact the metal port 501, but to abut against the surface 5021 inside the hole 5011 of the metal port 501 via the metal seal 302. In addition, in the insertion area 5012 of the metal port 501, a plurality of notches for engaging the spacer 503 are formed at a part of the edge forming the hole 5011. In addition, a male thread 5020 coaxial with the hole 5011 is provided on the outer peripheral surface of the metal port 501. The nut 504 is a socket nut and has: an inner peripheral surface 5041 having an inner diameter D5 through which the mounting portion 249p can be inserted; an inner peripheral surface 5042 coaxial with the inner peripheral surface 5041 and having an inner diameter D6 that is larger than the inner diameter D5 of the inner peripheral surface 5041 and has a dimensional tolerance difference from the male thread 5020 of the metal port 501; a surface 5043 that connects the inner peripheral surface 5041 and the inner peripheral surface 5042 substantially perpendicularly; and a female thread 5044 formed on the inner peripheral surface 5042 and screwed with the male thread 5020 of the metal port 501. The nut 504 is configured such that the female thread 5044 of the nut 504 is screwed with the male thread 5020 of the metal port 501 to press the spacer 503 toward the metal port 501 side. Therefore, it can save space and connect the nozzle 249 to the gas supply pipe 232. The outer peripheral surface 2491 of the mounting portion 249p and the inner peripheral surface 5041 of the nut 504 are fitted with a gap therebetween at a predetermined interval d2. The spacer 503 has a first member 5031, a second member 5032, and a third member 5033. The first member 5031, the second member 5032, and the third member 5033 are each divided into a plurality of arc shapes, and each is formed into an overall annular shape. The first member 5031 is engaged with the groove 403. That is, the first member 5031 is engaged with the pressing surface 4031 and the outer surface 4032 of the groove 403, and is engaged with the hole 5011 with a predetermined fitting tolerance with a gap therebetween. The second member 5032 is disposed such that its upper portion abuts against the outer peripheral surface of the mounting portion 249p on the upper portion of the first member 5031. The third member 5033 is disposed such that its upper portion is engaged with the notch 402 formed on the outer peripheral surface of the mounting portion 249p on the upper portion of the second member 5032. Therefore, a predetermined amount (here d2) is left between the outer peripheral surface 2491 of the mounting portion 249p and the inner peripheral surface 5041 of the nut 504, and contact between the adapter 500 and the mounting portion 249p can be prevented from occurring. In this way, in a state where the mounting portion 249p of the nozzle 249 is mounted on the adapter 500, the metal seal 302 is disposed to seal between the lower end surface 2492 of the mounting portion 249p and the surface 5021 of the connection region 5014. In this modified example, the same effects as those of the above aspect can still be obtained. The above has specifically described one aspect of the present invention. However, the present invention is not limited to the above aspect, and various changes can be made without departing from its gist. For example, in the above aspect, although the adapter 300 is used for connecting the nozzle 249 and the gas supply pipe 232 and is described as an example, it is not limited thereto. It can also be that the adapter 300 is used for connecting the exhaust hole 233 of the reaction tube 203 and the exhaust pipe 231. In addition, the present invention is not limited to the above aspect, and it can be used for all seals between pipes made of brittle materials and metal pipes. In addition, in the above aspect, although a part of the nozzle 249 is used as the mounting portion 249p and is described as an example, it is not limited thereto. It can also be that the mounting portion 249p is formed separately from the nozzle 249. That is, the nozzle 249 can also be configured to include a mounting portion 249p and a main body portion formed with a gas supply hole 250. In this case, for example, the mounting portion 249p can be connected to the end of the main body portion by welding. In addition, in the above aspect, although the nozzle 249 having an I-shaped mounting portion 249p in a convex shape or a concave shape is used and described as an example, the present invention is not limited to the above aspect. When a U-shaped nozzle or a nozzle of other shapes is used, it can still be suitably applied. In addition, in the above aspect, although an example of forming a film using a batch-type substrate processing apparatus that processes a plurality of substrates at once has been described. However, the present invention is not limited to the above aspect. For example, when forming a film using a single-substrate processing apparatus that processes one or several substrates at once, it can also be suitably applied. In addition, in the above aspect, although an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace has been described. However, the present invention is not limited to the above aspect. When forming a film using a substrate processing apparatus having a cold-wall type processing furnace, it can also be suitably applied. When using these substrate processing apparatuses, each process can also be performed with the same processing procedures and processing conditions as in the above aspect and modification examples, and the same effects as in the above aspect and modification examples can be obtained. The above aspect and modification examples can be used in appropriate combination. The processing procedures and processing conditions at this time can be set, for example, to the same processing procedures and processing conditions as in the above aspect and modification examples. 115: Wafer elevator 121: Controller 121a: CPU 121b: RAM 121c: Memory device 121d: I / O port 121e: Internal bus 122: Input / output device 123: External memory device 200: Wafer 201: Processing chamber 202: Processing furnace 203: Reaction tube 207: Heater 209: Manifold 217: Wafer boat 218: Heat insulation plate 219: Sealing cover 220a, 220b: O-ring 231: Exhaust pipe 232, 232a~232d: Gas supply pipe 233: Exhaust hole 241a~241d: Mass flow controller (MFC) 243a~243d: Valve 244: APC valve 245: Pressure sensor 246: Vacuum pump 248: Aggregate supply system 249, 249a, 249b: Nozzle 249p: Installation part 250, 250a, 250b: Gas supply hole 255: Rotating shaft 263: Temperature sensor 267: Rotating mechanism 300, 500: Adapter 301, 501: Metal port 302: Metal seal 303, 503: Spacer 304, 504: Nut 401: Flange 402: Notch 403: Groove 2491: Outer peripheral surface 2492, 4013: Lower end surface 3011, 5011: Hole 3012, 5012, 5013: Insertion area 3013: Notch (connection area) 3014, 5014, 5015, 5016: Connection area 3015, 3016, 5017, 5018, 5019: Step part 3017, 3032, 3043, 5021, 5043: Surface 3018, 5022: Opening 3019, 5020: Male thread 3031, 3033, 3042, 5041, 5042: Inner peripheral surface 3034: First protrusion 3035: Second protrusion 3041: Inner peripheral surface 3044, 5044: Female thread 4011, 4031: Pressing surface 4012: End surface 4032: Outer surface 5031: First member 5032: Second member 5033: Third member L1, L2, L3, L4, L5: Inner diameter D1, D2, D3, D4, D5, D6: Inner diameter d1, d2: Spacing FIG. 1 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus that can be suitably used in an aspect of the present invention, and it is a longitudinal sectional view showing the processing furnace portion. FIG. 2 is a perspective view illustrating the connection of a gas supply pipe, an adapter, and a nozzle. FIG. 3 is a sectional view illustrating a state in which the nozzle is installed in the adapter. FIG. 4(A) is a perspective view of a spacer observed from above. FIG. 4(B) is a perspective view of the spacer observed from below. FIG. 5 is a diagram for explaining a positioning mechanism of the nozzle and the adapter. FIG. 6 is a schematic configuration diagram of a controller of a substrate processing apparatus that can be suitably used in an aspect of the present invention, and it is a block diagram showing a control system of the controller. FIG. 7 is a flowchart in a substrate processing step of an aspect of the present invention. FIG. 8 is a sectional view illustrating a state in which a nozzle of a modified example of the present invention is installed in the adapter. 232: Gas supply pipe 249: Nozzle 249p: Installation part 250: Gas supply hole 300: Adapter 301: Metal port 302: Metal seal 303: Spacer 304: Nut 401: Flange 402: Notch 3013: Notch (connection area)

Claims

1. An adapter comprising: a metal port having a hole for inserting a mounting portion formed at one end of a conduit; a spacer configured to engage with a step portion disposed at the front end of the mounting portion; a metal seal configured to close the contact surface between the front end of the mounting portion and the metal port; and a nut having an inner diameter through which the mounting portion can pass, which screws into the metal port to press the spacer against the metal port side; wherein the spacer is divided into a plurality of arcs, forming an annular shape and disposed at the step portion, and has a positioning mechanism that does not require adjustment of positioning about the axis of the conduit; and when the nut is tightened, the deformation of the metal seal is set to close the contact surface between the front end of the mounting portion and the metal port.

2. As in request item 1, the adapter, where, The aforementioned step portion is formed such that its diameter increases toward the aforementioned front end side.

3. As in request item 1, the adapter, where, The positioning mechanism has: a first protrusion formed on the outer peripheral side of the spacer and engaging with a notch formed on a portion of the edge of the hole; and a second protrusion formed on the inner peripheral side of the spacer to engage with a notch formed on the outer peripheral surface of the mounting portion.

4. As in request item 1, the adapter, where, The aforementioned metal seal is deformed by the combined force of the weight of the aforementioned piping and the pressing force from the aforementioned nut.

5. As in request item 1, the adapter, where, The bottom of the aforementioned hole is formed flat, and an opening communicating with the gas flow path is provided in the center of the bottom. The aforementioned metal seal seals the area around the opening and the front end of the aforementioned device.

6. As in request item 1, the adapter, where, The aforementioned step portion has a pressing surface that is substantially perpendicular to the central axis of the aforementioned mounting portion and an end face that is substantially parallel to the central axis of the aforementioned mounting portion. The aforementioned spacer is engaged with the aforementioned pressing surface and the aforementioned end face, and is fitted into the aforementioned hole with a predetermined fitting tolerance and a gap.

7. As in request item 1, the adapter, where, The aforementioned step portion is formed by an outwardly projecting flange formed at the front end of the aforementioned mounting portion.

8. As in request item 1, the adapter, where, The aforementioned step difference is formed by a surrounding groove formed near the front end of the aforementioned mounting section.

9. As in request item 1, the adapter, wherein, The aforementioned hole has: a second difference, which changes from a first inner diameter that is larger than the outer diameter of the front end of the aforementioned mounting portion to a second inner diameter that is smaller than the aforementioned outer diameter; and a third difference, which changes from the aforementioned second inner diameter to a third inner diameter that is smaller than the aforementioned second inner diameter; the aforementioned metal seal is disposed between the aforementioned second difference and the aforementioned third difference.

10. The adapter as requested in item 1, wherein, The aforementioned metal port has a male thread coaxial with the aforementioned hole around it, and the aforementioned nut is a bag nut that engages with the aforementioned male thread.

11. As in request item 3, the adapter, wherein, The aforementioned division of the spacer and the arrangement of the aforementioned first protrusion are configured to be rotationally symmetrical more than twice.

12. As in request item 1, the adapter, wherein, When the metal seal closes the contact surface between the front end of the device and the metal port, the reaction force of the metal seal is more than twice the weight of the pipe.

13. An adapter as requested in any of items 1, 4, and 12, wherein, The aforementioned piping consists of nozzles made of brittle material, which inject processing gas into the processing chamber of the substrate processing apparatus.

14. An adapter as requested in any of items 1, 4, and 12, wherein, The aforementioned piping is arranged to extend vertically, and the direction of gravity applied to the aforementioned piping is substantially the same as the pipe axis of the aforementioned installation part.

15. As in request item 7, the adapter, wherein, The contact between the aforementioned metal seal and the aforementioned flange is located at the front end of the aforementioned flange, and it only occurs in the area that is further outward than the inner diameter of the aforementioned flange and further inward than the outer diameter of the aforementioned flange.

16. A substrate processing apparatus comprising: a first piping connected to a processing chamber for processing a substrate, for supplying gas to or discharging gas from the processing chamber; and an adapter communicatively connecting the first piping to a second piping; the adapter comprising: a metal port having a hole for inserting a mounting portion formed at one end of the first piping; a spacer configured to engage with a step portion provided at the front end of the mounting portion; a metal seal configured to seal the contact surface between the front end of the mounting portion and the metal port; and a nut having an inner diameter through which the mounting portion can pass, which screws into the metal port to press the spacer against the metal port side; the spacer being divided into a plurality of arcuate segments, forming an annular shape and disposed at the step portion, and having a positioning mechanism that does not require adjustment of positioning about the axis of the piping. When the nut is tightened, the deformation of the metal seal is set to seal the contact surface between the front end of the mounting part and the metal port.

17. A substrate processing method comprising the steps of: supplying gas to a processing chamber via a first piping or discharging the gas from the processing chamber, wherein, The first conduit is connected at one end to the second conduit via an adapter, and at the other end to the processing chamber where the substrate is processed. The adapter includes: a metal port having a hole for inserting a mounting portion, which is formed at the aforementioned end; a spacer configured to engage with a step portion provided at the front end of the mounting portion; a metal seal configured to seal the contact surface between the front end of the mounting portion and the metal port; and a nut having a nut for inserting the mounting portion. The inner diameter of the fitting is inserted through, which screws into the metal port to press the spacer against the metal port side; the spacer is divided into a plurality of arcs, which are arranged in a ring shape in the stepped portion, and has a positioning mechanism that does not require adjustment of the positioning around the axis of the pipe; when the nut is tightened, the deformation of the metal seal is set to seal the contact surface between the front end of the fitting and the metal port; and the step of exposing the substrate to the gas for processing.

18. A method for manufacturing a semiconductor device, comprising the steps of: supplying gas to a processing chamber via a first piping or discharging the gas from the processing chamber, wherein, The first piping is connected at one end to the second piping via an adapter, and at the other end to the processing chamber where the substrate is processed. The adapter includes: a metal port having a hole for inserting a mounting portion, which is formed at the aforementioned end; a spacer configured to engage with a step portion provided at the front end of the mounting portion; a metal seal configured to seal the contact surface between the front end of the mounting portion and the metal port; and a nut having a nut for inserting the mounting portion. The inner diameter of the insert is screwed into the metal port to press the spacer against the metal port side; the spacer is divided into a plurality of arcs, which are arranged in a ring shape in the stepped portion and have a positioning mechanism that does not require adjustment of the positioning around the pipe axis; when the nut is tightened, the deformation of the metal seal is set to seal the contact surface between the front end of the mounting portion and the metal port; and the step of exposing the substrate to the gas for processing.

19. A program that can complete the substrate processing method of claim 17 by executing a program on a computer, the program comprising: a process for supplying gas to a processing chamber or discharging gas from the processing chamber via a first piping, wherein, The first conduit is connected at one end to the second conduit via an adapter, and at the other end to the processing chamber where the substrate is processed. The adapter includes: a metal port having a hole for inserting a mounting portion, which is formed at the aforementioned end; a spacer configured to engage with a step portion provided at the front end of the mounting portion; a metal seal configured to seal the contact surface between the front end of the mounting portion and the metal port; and a nut having a nut for inserting the mounting portion. The inner diameter of the fitting is inserted through, which screws into the metal port to press the spacer against the metal port side; the spacer is divided into a plurality of arcs, which are arranged in a ring shape in the stepped portion, and has a positioning mechanism that does not require adjustment of the positioning around the axis of the piping; when the nut is tightened, the deformation of the metal seal is set to seal the contact surface between the front end of the fitting and the metal port; and the procedure of exposing the substrate to the gas for processing.

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