Substrate processing system, and substrate processing method

Abstract

This invention provides a technique for miniaturizing a substrate processing system. The substrate processing system of this invention includes: a loading / unloading section for loading and unloading a substrate cassette containing a plurality of substrates; a batch processing section for processing a batch of substrates containing a plurality of substrates together; a single-substrate processing section for processing each substrate in the batch; and an interface section for transferring the substrate between the batch processing section and the single-substrate processing section; the loading / unloading section, the single-substrate processing section, the interface section, and the batch processing section are arranged in this order; the interface section includes: a substrate batch forming section for forming the substrate batch; and a transport section for transporting the substrate from the single-substrate processing section to the substrate batch forming section and from the batch processing section to the single-substrate processing section.

Description

Substrate Processing System and Substrate Processing Method The present invention relates to a substrate processing system and a substrate processing method. The drying device described in Patent Document 1 includes a buffer tank, a transfer unit, and a rotary drying unit. The buffer tank holds the semiconductor wafer that has undergone a water washing process in water. The semiconductor wafer is subjected to a water washing process in a state where a plurality of wafers are placed on one holding stage, and is held in the water of the buffer tank while maintaining the state of being placed on the holding stage. The transfer unit picks up and transfers the semiconductor wafers one by one from the buffer tank. The rotary drying unit supports one semiconductor wafer transferred by the transfer unit with its main surface horizontal, rotates it at high speed, and removes the water. [Prior Art Documents] [Patent Documents] [Patent Document 1] Japanese Patent Application Laid-Open No. 9-162157 [Problems to be Solved by the Present Invention] One aspect disclosed by the present invention provides a technology for miniaturizing a substrate processing system. [Technical Means for Solving the Problems] A substrate processing system according to one aspect disclosed by the present invention includes: a loading / unloading unit for loading and unloading a substrate cassette storing a plurality of the substrates; a batch processing unit for collectively processing a substrate lot including a plurality of substrates; a single-wafer processing unit for processing each substrate of the substrate lot one by one; and an interface unit for transferring the substrate between the batch processing unit and the single-wafer processing unit; the loading / unloading unit, the single-wafer processing unit, the interface unit, and the batch processing unit are arranged in this order; the interface unit includes: a substrate lot forming unit for forming the substrate lot; and a transfer unit for transferring the substrate from the single-wafer processing unit to the substrate lot forming unit and transferring the substrate from the batch processing unit to the single-wafer processing unit. [Effects of the Present Invention] According to one aspect disclosed by the present invention, the substrate processing system can be miniaturized. Hereinafter, with reference to the drawings, embodiments disclosed by the present invention will be described. In addition, there may be cases where the same or corresponding components in each drawing are given the same reference numerals and the description is omitted. As shown in FIG. 1, a substrate processing system 1 includes a loading / unloading unit 2, a single-wafer processing unit 3, an interface unit 5, a batch processing unit 6, and a control unit 9. The loading / unloading unit 2 includes a stage 21 for placing a substrate cassette C. The substrate cassette C stores a plurality of (e.g., 25) substrates W and is loaded / unloaded to / from the loading / unloading unit 2. Inside the substrate cassette C, the substrates W are held horizontally and are held at a second pitch P2 (P2 = N × P1) that is N times the first pitch P1 in the vertical direction. N is a natural number of 2 or more, and is 2 in this embodiment, but may be 3 or more. The single-wafer processing unit 3 processes the substrates W one by one. The interface unit 5 transfers the substrates W between the single-wafer processing unit 3 and the batch processing unit 6. The batch processing unit 6 processes a substrate lot L including a plurality of (e.g., 50) substrates W separated by the first pitch P1 all at once. One substrate lot L is composed of the substrates W in, for example, N substrate cassettes C. The loading / unloading unit 2, the single-wafer processing unit 3, the interface unit 5, and the batch processing unit 6 are arranged in this order from the negative side in the X-axis direction toward the positive side in the X-axis direction. The substrate W is transported in the order of arrows A1, A2, A3, A4, and A5 shown in FIG. 1 starting from the loading / unloading unit 2 and returns to the loading / unloading unit 2. Since the loading / unloading unit 2 serves as both a loading unit and an unloading unit, the substrate processing system 1 can be miniaturized. The loading / unloading unit 2 includes a stage 21, and the stage 21 includes a plurality of mounting plates 22. A plurality of substrate cassettes C are placed on the plurality of mounting plates 22. In addition, the number of the mounting plates 22 is not particularly limited. Similarly, the number of the substrate cassettes C is not particularly limited. The loading / unloading unit 2 includes a first transfer area 23, and the first transfer area 23 is adjacent to the stage 21 and is arranged on the positive side in the X-axis direction of the stage 21. A first transfer device 24 is provided in the first transfer area 23. The first transfer device 24 includes a first transfer arm, and the first transfer arm moves in the horizontal direction (X-axis direction and Y-axis direction) and the vertical direction and rotates around the vertical axis. The first transfer arm transports the substrate W between the substrate cassette C and a transfer unit 25 described later. The number of the first transfer arms may be one or plural. In the case of the latter, the first transfer device 24 transports a plurality of (e.g., 5) substrates W all at once. The loading / unloading unit 2 includes a transfer unit 25, and the transfer unit 25 is adjacent to the first transfer area 23 and is arranged on the positive side in the X-axis direction of the first transfer area 23. The transfer unit 25 includes a first buffer device 26 for temporarily storing the substrate W. The number of the first buffer devices 26 may also be plural, and a plurality of first buffer devices 26 can be stacked in the vertical direction. The first buffer device 26 receives the substrate W from the first transfer device 24 and temporarily stores it until it is transferred to a second transfer device 32 described later. In addition, the first buffer device 26 receives the substrate W from the second transfer device 32 and temporarily stores it until it is transferred to the first transfer device 24. The single-chip processing unit 3 is provided with a second transfer area 31. The second transfer area 31 is adjacent to the transfer unit 25 and is arranged on the positive X-axis side of the transfer unit 25. In the second transfer area 31, a second transfer device 32 is provided. The second transfer device 32 is equipped with a second transfer arm. The second transfer arm moves in the horizontal direction (X-axis direction and Y-axis direction) and the vertical direction and rotates around the vertical axis. The second transfer arm transports the substrate between the devices adjacent to the second transfer area 31. The number of the second transfer arms can be one or plural. In the case of the latter, the second transfer device 32 transports plural substrates W (for example, 5 substrates) together. The single-chip processing unit 3, beside the second transfer area 31, for example, is equipped with a second transition device 33, a liquid processing device 34, and a drying device 35. The second transition device 33 is adjacent to the second transfer area 31 and is arranged on the positive X-axis side of the second transfer area 31. The second transition device 33 receives the substrate W from the second transfer device 32 and temporarily stores it until it is delivered to the interface part 5. The liquid processing device 34 is of single-chip type and processes the substrate W one by one with a processing liquid. The processing liquid can also be plural types. For example, it can be pure water such as DIW and a drying liquid with a lower surface tension than pure water. The drying liquid can be, for example, an alcohol such as IPA (isopropyl alcohol). The drying device 35 is of single-chip type and dries the substrate W one by one with a supercritical fluid. In addition, both the liquid processing device 34 and the drying device 35 do not have to be of single-chip type. It is possible to make the liquid processing device 34 of single-chip type and the drying device 35 of batch type. The drying device 35 can also dry plural substrates W together with a supercritical fluid. The number of substrates W processed together by the drying device 35 can be equal to or more than the number of substrates W processed together by the batch processing unit 6, but it can also be less. In addition, the configuration and number of the liquid processing device 34 and the drying device 35 are not limited to the form in FIG. 1. For example, the liquid processing device 34 can also be arranged on both sides of the second transfer area 31 in the Y-axis direction. In addition, the liquid processing device 34 can also be stacked in the Z-axis direction. The configuration of the drying device 35 is the same as the configuration of the liquid processing device 34. In addition, devices other than the liquid processing device 34 and the drying device 35 can be arranged beside the second transfer area 31. The interface part 5, for example, is equipped with a substrate batch forming part 51 and a transfer part 52. The substrate batch forming part 51 holds plural substrates W with a first pitch P1 therebetween and forms a substrate batch L. The transfer part 52 transports the substrate W from the single-chip processing unit 3 to the substrate batch forming part 51 and transports the substrate W from the batch processing unit 6 to the single-chip processing unit 3. The transfer unit 52, as shown in FIG. 7, includes a first transfer robot 53 and a second transfer robot 54. The first transfer robot 53 transfers the substrate W from the single-wafer processing unit 3 to the substrate lot forming unit 51. The second transfer robot 54 transfers the substrate W from the batch processing unit 6 to the single-wafer processing unit 3. Additionally, as shown in FIG. 8, the transfer unit 52 may include a single transfer robot 41 that also serves as the first transfer robot 53 and the second transfer robot 54. Since the first transfer robot 53 and the second transfer robot 54 are separately provided, the movement A1 of the substrate W from the single-wafer processing unit 3 to the batch processing unit 6 and the movement A3 of the substrate W from the batch processing unit 6 to the single-wafer processing unit 3 can be controlled separately. Therefore, the situation of movement stagnation of the substrate W can be suppressed by the interface unit 5, and the throughput can be improved. The batch processing unit 6 is provided with a third transfer area 61. The third transfer area 61 is adjacent to the interface unit 5 and is arranged on the positive X-axis direction side of the interface unit 5. In the third transfer area 61, a third transfer device 62 is provided. The third transfer device 62 includes a third transfer arm. The third transfer arm moves in the horizontal direction (X-axis direction and Y-axis direction) and the vertical direction and rotates around the vertical axis. Additionally, the third transfer arm may not rotate around the vertical axis. The third transfer arm transfers the substrate W between the devices adjacent to the third transfer area 61. The third transfer arm transfers the substrate lot L together. The third transfer area 61 is rectangular in plan view, and its long side direction is the X-axis direction. The substrate lot forming unit 51 is arranged beside the short side of the third transfer area 61, the processing tank (such as the third rinse liquid tank 68) is arranged beside the long side of the third transfer area 61, and the transfer unit 52 is arranged beside both the substrate lot forming unit 51 and the processing tank. Since the transfer unit 52 can easily access both the substrate lot forming unit 51 and the processing tank, a transfer robot with a narrow movable range at the front end can be used as the first transfer robot 53 and the second transfer robot 54. Since the substrate lot forming unit 51 is arranged beside the short side of the third transfer area 61 and the processing tank is arranged beside the long side of the third transfer area 61, the alignment direction of the substrate W is different between the substrate lot forming unit 51 and the processing tank. Therefore, the third transfer device 62 is rotated around the vertical axis. By the rotation of the third transfer device 62, the alignment direction of the substrate W can be changed between the X-axis direction and the Y-axis direction. Additionally, when it is not necessary to change the alignment direction of the substrate, the third transfer device 62 may not rotate around the vertical axis. The batch processing unit 6 is located beside the third transfer area 61 and includes, for example, a first chemical solution tank 63, a first rinse solution tank 64, a second chemical solution tank 65, a second rinse solution tank 66, a third chemical solution tank 67, and a third rinse solution tank 68. These processing tanks are arranged along the long side of the third transfer area 61. Specifically, the first chemical solution tank 63, the first rinse solution tank 64, the second chemical solution tank 65, the second rinse solution tank 66, the third chemical solution tank 67, and the third rinse solution tank 68 are arranged in this order from the positive side in the X-axis direction to the negative side in the X-axis direction. In addition, the number of processing tanks arranged beside the third transfer area 61 is not limited to the form in FIG. 1. For example, the second chemical solution tank 65 and the second rinse solution tank 66 are one set in FIG. 1, but may also be a plurality of sets. The first chemical solution tank 63 stores the first chemical solution for immersing the substrate batch L. The first chemical solution is not particularly limited and is, for example, DHF (dilute hydrofluoric acid). DHF removes the natural oxide film. Alternatively, BHF (a mixed solution of hydrofluoric acid and ammonium fluoride) may be used instead of DHF. The first rinse solution tank 64 stores the first rinse solution for immersing the substrate batch L. The first rinse solution is pure water for removing the first chemical solution from the substrate W and is, for example, DIW (deionized water). The batch processing unit 6 includes a first processing tool 71 that holds the substrate batch L received from the third transfer device 62. The first processing tool 71 holds a plurality of substrates W with a first pitch P1 in the Y-axis direction and holds the plurality of substrates W vertically respectively. In addition, the batch processing unit 6 includes a first driving device 72 that moves the first processing tool 71 in the X-axis direction and the Z-axis direction. The first processing tool 71 holds the substrate batch L in the first chemical solution, then holds the substrate batch L in the first rinse solution, and then delivers the substrate batch L to the third transfer device 62. In addition, the number of units of the first processing tool 71 and the first driving device 72 is one in this embodiment, but may also be a plurality of units. In the latter case, one unit immerses the substrate batch L in the first chemical solution, and another unit immerses the substrate batch L in the first rinse solution. In this case, the first driving device 72 only needs to move the first processing tool 71 in the Z-axis direction, and the first processing tool 71 may not be moved in the X-axis direction. The second chemical solution tank 65 stores the second chemical solution for immersing the substrate batch L. The second chemical solution is not particularly limited and is, for example, an aqueous phosphoric acid solution. The aqueous phosphoric acid solution selectively etches and removes the silicon nitride film in the silicon oxide film and the silicon nitride film. The second rinse solution tank 66 stores the second rinse solution for immersing the substrate batch L. The second rinse solution is pure water for removing the second chemical solution from the substrate W and is, for example, DIW (deionized water). The batch processing unit 6 is provided with a second processing tool 73, which receives and holds the substrate batch L from the third transfer device 62. Similar to the first processing tool 71, the second processing tool 73 holds a plurality of substrates W with a first pitch P1 in the Y-axis direction, and vertically holds a plurality of substrates W respectively. In addition, the batch processing unit 6 is provided with a second driving device 74 for moving the second processing tool 73 in the Z-axis direction. The second processing tool 73 holds the substrate batch L in the second chemical solution, and then delivers the substrate batch L to the third transfer device 62. Similarly, the batch processing unit 6 is provided with a third processing tool 75, which receives and holds the substrate batch L from the third transfer device 62. Similar to the first processing tool 71, the third processing tool 75 holds a plurality of substrates W with a first pitch P1 in the Y-axis direction, and vertically holds a plurality of substrates W respectively. In addition, the batch processing unit 6 is provided with a third driving device 76 for moving the third processing tool 75 in the Z-axis direction. The third processing tool 75 holds the substrate batch L in the second rinsing solution, and then delivers the substrate batch L to the third transfer device 62. The third chemical solution tank 67 stores the third chemical solution for immersing the substrate batch L. The third chemical solution is not particularly limited. For example, it is SC1 (a mixed solution of ammonia, hydrogen peroxide, and water). SC1 removes organic substances and fine particles. The third rinsing solution tank 68 stores the third rinsing solution for immersing the substrate batch L. The third rinsing solution is pure water for removing the third chemical solution from the substrate W, for example, DIW (deionized water). The batch processing unit 6 is provided with a first holding tool 811, which receives and holds the substrate batch L from the third transfer device 62. The first holding tool 811 holds a plurality of substrates W with a first pitch P1 in the Y-axis direction, and vertically holds a plurality of substrates W respectively. In addition, the batch processing unit 6 is provided with a driving device 818 for moving the first holding tool 811 in the X-axis direction and the Z-axis direction. The first holding tool 811 holds the substrate batch L in the third chemical solution, and then holds the substrate batch L in the third rinsing solution. In addition, the number of units of the first holding tool 811 and the driving device 818 is one in this embodiment, but it may also be plural. In the latter case, one unit immerses the substrate batch L in the third chemical solution, and another unit immerses the substrate batch L in the third rinsing solution. In this case, the driving device 818 only needs to move the first holding tool 811 in the Z-axis direction, and the first holding tool 811 may not be moved in the X-axis direction. Furthermore, the batch processing unit 6 is provided with a second holding tool 814, which receives a plurality of substrates W arranged with a second pitch P2 (P2 = N × P1) from the first holding tool 811 in the third processing solution. The first holding tool 811, the second holding tool 814, and the driving device 818 form a substrate batch releasing unit 81. In addition, the types of chemical solutions used in the batch processing unit 6 are not limited to dilute hydrofluoric acid, BFH, phosphoric acid aqueous solution, and SC1. For example, they can also be dilute sulfuric acid, SPM (a mixed solution of sulfuric acid, hydrogen peroxide, and water), SC2 (a mixed solution of hydrochloric acid, hydrogen peroxide, and water), TMAH (a mixed solution of tetramethylammonium hydroxide and water), plating solutions, etc. The chemical solution can also be for stripping treatment or plating treatment. In addition, the quantity of the chemical solution is not particularly limited and can also be one type. The control unit 9 is, for example, a computer and includes a CPU (Central Processing Unit) 91, a recording medium 92 such as a memory, etc. In the recording medium 92, programs for controlling various processes performed in the substrate processing system 1 are stored. The control unit 9 controls the operation of the substrate processing system 1 by causing the CPU 91 to execute the programs stored in the recording medium 92. In addition, the control unit 9 includes an input interface 93 and an output interface 94. The control unit 9 receives signals from the outside through the input interface 93 and sends signals to the outside through the output interface 94. The above programs are, for example, stored in a computer-readable recording medium and installed from this recording medium to the recording medium 92 of the control unit 9. Examples of computer-readable recording media include hard disks (HD), floppy disks (FD), optical discs (CD), magneto-optical discs (MO), memory cards, etc. In addition, the programs can also be downloaded from a server via the Internet and installed to the recording medium 92 of the control unit 9. Next, referring to Figure 2, the operation of the above substrate processing system 1, that is, the substrate processing method, will be described. The processing shown in Figure 2 is implemented under the control performed by the control unit 9. First, the substrate cassette C is carried into the loading / unloading unit 2 in a state of containing a plurality of substrates W and placed on the placement plate 22. Inside the substrate cassette C, the substrates W are held horizontally and held at a second pitch P2 (P2 = N × P1) in the vertical direction. N is a natural number of 2 or more. Although it is 2 in this embodiment, it can also be 3 or more. Next, the first transfer device 24 takes out the substrate W in the substrate cassette C (S101 in Figure 2) and transfers it to the first transfer device 26. Next, the second transfer device 32 receives the substrate W from the first transfer device 26 and transfers it to the second transfer device 33. Then, the first transfer robot 53 receives the substrate W from the second transfer device 33 and transfers it to the substrate batch forming unit 51. Next, the substrate batch forming unit 51 holds a plurality of substrates W at a first pitch P1 (P1 = P2 / N) to form a substrate batch L (S102 in Figure 2). One substrate batch L is, for example, composed of the substrates W of N substrate cassettes C. Since the pitch of the substrates W narrows from the second pitch P2 to the first pitch P1, the number of substrates W that can be processed together can be increased. Next, the third transfer device 62 receives the substrate batch L from the substrate batch forming unit 51 and transfers it to the first processing tool 71. On the way, the third transfer device 62 rotates about the vertical axis to change the arrangement direction of the plurality of substrates W from the X-axis direction to the Y-axis direction. Next, the first processing tool 71 descends from above the first chemical liquid tank 63, immerses the substrate batch L in the first chemical liquid, and performs the first chemical liquid treatment (S103 in FIG. 2). Then, the first processing tool 71 ascends to lift the substrate batch L from the first chemical liquid, and then moves in the X-axis direction toward above the first rinse liquid tank 64. Next, the first processing tool 71 descends from above the first rinse liquid tank 64, immerses the substrate batch L in the first rinse liquid, and performs the first rinse liquid treatment (S104 in FIG. 2). Then, the first processing tool 71 ascends to lift the substrate batch L from the first rinse liquid. After that, the third transfer device 62 receives the substrate batch L from the first processing tool 71 and transfers it to the second processing tool 73. Next, the second processing tool 73 descends from above the second chemical liquid tank 65, immerses the substrate batch L in the second chemical liquid, and performs the second chemical liquid treatment (S105 in FIG. 2). Then, the second processing tool 73 ascends to lift the substrate batch L from the second chemical liquid. After that, the third transfer device 62 receives the substrate batch L from the second processing tool 73 and transfers it to the third processing tool 75. Next, the third processing tool 75 descends from above the second rinse liquid tank 66, immerses the substrate batch L in the second rinse liquid, and performs the second rinse liquid treatment (S106 in FIG. 2). Then, the third processing tool 75 ascends to lift the substrate batch L from the second rinse liquid. After that, the third transfer device 62 receives the substrate batch L from the third processing tool 75 and transfers it to the first holder 811. Next, the first holder 811 descends from above the third chemical liquid tank 67, immerses the substrate batch L in the third chemical liquid, and performs the third chemical liquid treatment (S107 in FIG. 2). Then, the first holder 811 ascends to lift the substrate batch L from the third chemical liquid, and then moves in the X-axis direction toward above the third rinse liquid tank 68. Next, the first holder 811 descends from above the third rinse liquid tank 68, immerses the substrate batch L in the third rinse liquid, and performs the third rinse liquid treatment (S108 in FIG. 2). In addition, during the downward movement of the first holder 811, a part of the substrate batch L is delivered to the second holder 814, and the pitch of the substrates W is widened from the first pitch P1 to the second pitch P2 (S109 in FIG. 2). The second holder 814 holds a plurality of substrates W with the second pitch P2 therebetween, and the first holder 811 also holds a plurality of substrates W with the second pitch P2 therebetween. Further, the first holder 811 alternately repeats holding the substrates W delivered to the second holder 814 and the substrates W not delivered to the second holder 814 and continuously held. That is, the substrates W in a part of the substrate batch L and the substrates W in the remaining part of the substrate batch L are alternately and repeatedly arranged to form the substrate batch L. Next, the second transfer robot 54 transfers the substrates W separately held by the first holder 811 and the second holder 814 in the third rinse liquid to the single wafer processing unit 3. Since the pitch of the substrates W is wide, interference between the substrates W and the second transfer robot 54 can be prevented. In addition, the pitch of the substrates W during the formation of the substrate batch L can be narrowed, and the number of substrates W processed together can be increased. The second transfer robot 54 transfers the substrates W one by one to the liquid processing device 34 of the single wafer processing unit 3. Next, the liquid processing device 34 processes the substrates W one by one with a liquid (S110 in FIG. 2). The liquid can be a plurality of types, for example, pure water such as DIW and a drying liquid having a lower surface tension than pure water. The drying liquid can be an alcohol such as IPA (isopropyl alcohol), for example. The liquid processing device 34 supplies pure water and the drying liquid to the top surface of the substrate W in the above order to form a liquid film of the drying liquid. Next, the second transfer device 32 receives the substrate W from the liquid processing device 34 and horizontally holds the substrate W with the liquid film of the drying liquid facing upward. The second transfer device 32 transfers the substrate W from the liquid processing device 34 to the drying device 35. Next, the drying device 35 dries the substrates W one by one with a supercritical fluid (S111 in FIG. 2). The drying liquid can be replaced with a supercritical fluid, and collapse of the uneven pattern of the substrate W caused by the surface tension of the drying liquid can be suppressed. Since a pressure-resistant container is required for the supercritical fluid, in order to miniaturize the pressure-resistant container, it is performed in a single wafer processing manner rather than a batch processing manner. The drying device 35, as shown in FIG. 9, includes a pressure-resistant container 351, a movable tray 353, and a supply port 356. The pressure-resistant container 351 is provided with a carry-in / carry-out port 352 for carrying the substrate W in and out. The movable tray 353 is provided with a lid portion 354 for opening and closing the carry-in / carry-out port 352 and a holding portion 355 for horizontally holding the substrate W. In a state where the lid portion 354 closes the carry-in / carry-out port 352, the holding portion 355 horizontally holds the substrate W inside the pressure-resistant container 351. An uneven pattern is previously formed on the top surface of the substrate W, and a liquid film of the drying liquid covers the uneven pattern. The supply port 356 supplies a supercritical fluid such as carbon dioxide into the pressure-resistant container 351. Further, the number and position of the supply ports 356 are not limited to the form shown in FIG. 9. The single-piece drying device 35 dries the substrate W with a liquid film formed thereon one by one by means of a supercritical fluid. Further, although the drying device 35 is of the single-piece type in this embodiment, it may also be of the batch type as described above. The batch-type drying device 35 dries a plurality of substrates W with liquid films formed thereon together by means of a supercritical fluid. The single-piece drying device 35 is provided with one holding portion 355, whereas the batch-type drying device 35 is provided with a plurality of holding portions 355. Further, although the drying device 35 of this embodiment dries the substrate W by means of a supercritical fluid, the drying method is not particularly limited. The drying method may be any method that can suppress the collapse of the uneven pattern of the substrate W. For example, it may also be rotary drying, scanning drying, or hydrophobic drying, etc. In rotary drying, the substrate W is rotated, and the liquid film is thrown off from the substrate W by centrifugal force. In scanning drying, the supply position of the drying liquid is moved from the center of the substrate W toward the outer periphery of the substrate W, and the substrate W is rotated, and the liquid film is thrown off from the substrate W by centrifugal force. In scanning drying, further, the supply position of a drying gas such as N 2 gas may also be moved from the center of the substrate W toward the outer periphery of the substrate W to track the supply position of the drying liquid. Then, the second transfer device 32 receives the substrate W from the drying device 35 and transfers it to the first transition device 26. Next, the first transfer device 24 receives the substrate W from the first transition device 26 and stores it in the substrate cassette C (S112 in FIG. 2). The substrate cassette C is taken out from the carry-in / carry-out portion 2 in a state where a plurality of substrates W are stored therein. Next, with reference to FIGS. 3, 4A, 4B, and 4C, the substrate batch forming portion 51 will be described. Further, in order to fit the space of the drawings, the number of substrates W is shown as less than the actual number. The number of the first holding grooves 513, the number of the second holding grooves 516, and the number of the through grooves 517 are the same number. The substrate batch forming unit 51 includes a first holder 511. As shown in FIG. 4C, the first holder 511 holds a plurality of (e.g., 50) substrates W with a first pitch P1 in the X-axis direction, and forms a substrate batch L. Only 12 of the 50 substrates are illustrated in FIG. 4C. As shown in FIG. 3, the first holder 511 includes a plurality of first arms 512. The number of the first arms 512 is not limited to the illustrated form. The plurality of first arms 512 each extend in the X-axis direction and include first holding grooves 513 arranged with the first pitch P1 in the X-axis direction. The outer periphery of the substrate W is inserted into the first holding grooves 513, and the first holding grooves 513 hold the outer periphery of the substrate W. The plurality of first arms 512 hold the outer peripheries of the plurality of substrates W at intervals along the circumferential direction. In addition, the substrate batch forming unit 51 includes a second holder 514. As shown in FIG. 4B, the second holder 514 holds a plurality of (e.g., 25) substrates W with a second pitch P2 in the X-axis direction. Only 6 of the 25 substrates are illustrated in FIG. 4B. As shown in FIG. 3, the second holder 514 includes a plurality of second arms 515. The number of the second arms 515 is not limited to the illustrated form. The plurality of second arms 515 each extend in the X-axis direction and include second holding grooves 516 arranged with the second pitch P2 in the X-axis direction. The outer periphery of the substrate W is inserted into the second holding grooves 516, and the second holding grooves 516 hold the outer periphery of the substrate W. The plurality of second arms 515 hold the outer peripheries of the plurality of substrates W at intervals along the circumferential direction. In addition, the plurality of second arms 515 further include passing grooves 517 arranged with the second pitch P2 in the X-axis direction. The outer periphery of the substrate W is also inserted into the passing grooves 517, but the passing grooves 517 do not hold the outer periphery of the substrate W but allow the substrate W to pass through. The passing grooves 517 and the second holding grooves 516 are arranged alternately in the X-axis direction. The passing grooves 517 and the second holding grooves 516 are arranged at the same X-axis direction position as any one of the plurality of first holding grooves 513. Furthermore, the substrate batch forming unit 51 includes a driving device 518. The driving device 518 moves the first holder 511 up and down relative to the second holder 514. The first holder 511 can move up and down between a retracted position (refer to FIG. 4B) below the second holder 514 and a substrate batch forming position (refer to FIG. 4C) above the second holder 514. Next, referring again to FIGS. 4A, 4B, and 4C, the operation of the substrate batch forming unit 51 will be described. First, as shown in FIG. 4A, the first holding tool 511 stops at a receiving position below the second holding tool 514. Then, the receiving position may be set between the retracted position and the substrate batch forming position, or may be set above the second holding tool 514. The first transfer robot 53 inserts a plurality of substrates W (for example, five substrates, and only two of the five substrates are shown in FIG. 4A) into the through groove 517 of the second holding tool 514 each time and delivers them to the first holding tool 511. This operation is repeated a plurality of times so that the first holding tool 511 holds a plurality of substrates W (for example, 25 substrates, and only six of the 25 substrates are shown in FIG. 4A) with a second pitch P2 therebetween. Alternatively, the first transfer robot 53 may insert the substrates W one by one into the through groove 517 of the second holding tool 514 and deliver them to the first holding tool 511. Next, as shown in FIG. 4B, the first holding tool 511 descends from the receiving position to the retracted position to prevent interference between the substrate W and the first transfer arm 531 of the first transfer robot 53. Then, the first transfer robot 53 inserts a plurality of substrates W (for example, five substrates, and only two of the five substrates are shown in FIG. 4B) into the second holding groove 516 of the second holding tool 514 each time and delivers them to the second holding tool 514. This operation is repeated a plurality of times so that the second holding tool 514 holds a plurality of substrates W (for example, 25 substrates, and only six of the 25 substrates are shown in FIG. 4A) with a second pitch P2 therebetween. Alternatively, the first transfer robot 53 may insert the substrates W one by one into the second holding groove 516 of the second holding tool 514 and deliver them to the second holding tool 514. Next, as shown in FIG. 4C, the first holding tool 511 ascends from the retracted position to the substrate batch forming position. On the way, the first holding tool 511 receives the substrate W from the second holding tool 514 with the empty first holding groove 513 and forms a substrate batch L together with the substrates W originally held. One substrate batch L is composed of the substrates W in, for example, N substrate cassettes C. Then, one substrate batch L may be composed of the substrates W in one substrate cassette C, or may be composed of the substrates W in three or more substrate cassettes C. One substrate batch L only needs to include a plurality of substrates W with a first pitch P1 therebetween. The substrate batch forming unit 51 may further include a third holding tool (not shown). Similar to the second holding tool 514, the third holding tool holds a plurality of substrates W with a second pitch P2 therebetween and delivers the held substrates W to the first holding tool 511. Since the first holding tool 511 receives the substrates W not only from the second holding tool 514 but also from the third holding tool, the ratio N of the first pitch P1 to the second pitch P2 can be increased, and the number of substrates W to be processed together can be increased. Next, referring to FIGS. 5, 6A, 6B, and 6C, the substrate batch removing unit 81 will be described. In addition, for the sake of the drawing space, the number of substrates W is illustrated as being less than the actual number. Regarding the number of the first holding grooves 813, the number of the second holding grooves 816, and the number of the through grooves 817, they are the same number. The substrate batch removing unit 81 includes a first holder 811. As shown in FIG. 6A, the first holder 811 holds a plurality of (for example, 50) substrates W with a first pitch P1 in the Y-axis direction (only 12 of the 50 substrates are illustrated in FIG. 6A). As shown in FIG. 5, the first holder 811 includes a plurality of first arms 812. The number of the first arms 812 is not limited to the illustrated form. The plurality of first arms 812 each extend in the Y-axis direction and include first holding grooves 813 arranged with a first pitch P1 in the Y-axis direction. The outer periphery of the substrate W is inserted into the first holding grooves 813, and the first holding grooves 813 hold the outer periphery of the substrate W. The plurality of first arms 812 hold the outer peripheries of the plurality of substrates W at intervals along the circumferential direction. In addition, the substrate batch removing unit 81 includes a second holder 814. As shown in FIG. 6B, the second holder 814 holds a plurality of (for example, 25) substrates W with a second pitch P2 in the Y-axis direction (only 6 of the 25 substrates are illustrated in FIG. 6B). As shown in FIG. 5, the second holder 814 includes a plurality of second arms 815. The number of the second arms 815 is not limited to the illustrated form. The plurality of second arms 815 each extend in the Y-axis direction and include second holding grooves 816 arranged with a second pitch P2 in the Y-axis direction. The outer periphery of the substrate W is inserted into the second holding grooves 816, and the second holding grooves 816 hold the outer periphery of the substrate W. The plurality of second arms 815 hold the outer peripheries of the plurality of substrates W at intervals along the circumferential direction. In addition, the plurality of second arms 815 further include through grooves 817 arranged with a second pitch P2 in the Y-axis direction. The outer periphery of the substrate W is also inserted into the through grooves 817, but the through grooves 817 do not hold the outer periphery of the substrate W but allow the substrate W to pass through. The through grooves 817 and the second holding grooves 816 are arranged alternately in the Y-axis direction. The through grooves 817 and the second holding grooves 816 are arranged at the same Y-axis direction position as any one of the plurality of first holding grooves 813. Furthermore, the substrate batch removing unit 81 includes a driving device 818. The driving device 818 raises and lowers the first holder 811 relative to the second holder 814. The first holder 811 can be raised and lowered between a descending start position (refer to FIG. 6A) above the second holder 814 and a descending end position (refer to FIG. 6B) below the second holder 814. Next, referring again to FIGS. 6A, 6B, and 6C, the operation of the substrate batch removal unit 81 will be described. First, as shown in FIG. 6A, the first holding jig 811 holds a plurality of substrates W at a first pitch P1 in the Y-axis direction at the start position of descent. The first holding jig 811 holds a plurality of substrates W vertically, respectively. The start position of descent is set above the third rinse liquid tank 68. Next, as shown in FIG. 6B, the first holding jig 811 descends to transfer a part of the substrate batch L to the second holding jig 814. The second holding jig 814 receives a plurality of substrates W arranged at a second pitch P2 from the first holding jig 811 in the third rinse liquid. The first holding jig 811 holds a plurality of substrates W passing through the through groove 817 of the second holding jig 814 at the end position of descent at a second pitch P2. As a result, a plurality of substrates W are separately held in the first holding jig 811 and the second holding jig 814 in the third rinse liquid. The second holding jig 814 holds a plurality of substrates W at a second pitch P2 above the first holding jig 811. Similarly, the first holding jig 811 holds a plurality of substrates W at a second pitch P2. A plurality of substrates W are held vertically, respectively. Next, as shown in FIG. 6B, the second transfer robot 54 receives the substrate W from the second holding jig 814, lifts the substrate W one by one from the third rinse liquid, and transfers it to the single-substrate processing unit 3. Since the substrates W are held at a second pitch P2, interference between the substrate W and the second transfer arm 541 of the second transfer robot 54 can be prevented. In addition, the second transfer robot 54 can also lift the substrates W plural at a time from the third rinse liquid. This lifting is repeated until the second holding jig 814 has no substrates W. Next, as shown in FIG. 6C, the first holding jig 811 ascends to transfer the substrate W to the second transfer robot 54. The first holding jig 811 stops at a position slightly below the second holding jig 814, but it can also stop at a position above the second holding jig 814. It is only necessary to keep the substrate W immersed in the third rinse liquid. Next, as shown in FIG. 6C, the second transfer robot 54 receives the substrate W from the first holding jig 811, lifts the substrate W one by one from the third rinse liquid, and transfers it to the single-substrate processing unit 3. Since the substrates W are held at a second pitch P2, interference between the substrate W and the second transfer arm 541 of the second transfer robot 54 can be prevented. In addition, the second transfer robot 54 can also lift the substrates W plural at a time from the third rinse liquid. This lifting is repeated until the first holding jig 811 has no substrates W. As described above, the substrate W is held in the third rinse liquid until it is lifted from the third rinse liquid by the second transfer robot 54. Since the substrate W is located below the liquid surface of the third rinse liquid, the surface tension of the third rinse liquid does not act on the substrate W, and collapse of the concavo-convex pattern of the substrate W can be prevented. The substrate batch removing unit 81 may further include a third holder (not shown). Similar to the second holder 814, the third holder receives a plurality of substrates W arranged at the second pitch P2 in the third rinse liquid from the first holder 811. Since the first holder 811 delivers the substrate W not only to the second holder 814 but also to the third holder, the ratio N of the first pitch P1 to the second pitch P2 can be increased. In addition, although the substrate batch removing unit 81 is provided in the third rinse liquid tank 68 in order to miniaturize the batch processing unit 6, it may also be provided in a dedicated processing tank. Similar to the third rinse liquid tank 68, the processing tank may be a tank for storing pure water. If pure water is used, deterioration of the second transfer arm 541 of the second transfer robot 54 can be suppressed. In addition, as long as deterioration of the second transfer arm 541 can be suppressed, the substrate batch removing unit 81 may be provided in a chemical liquid tank. Next, with reference to FIG. 7, the first transfer robot 53 and the second transfer robot 54 will be described. In addition, in order to fit the drawing space, the number of the first transfer arms 531 of the first transfer robot 53 is shown as less than the actual number. The first transfer robot 53 transfers the substrate W from the single-substrate processing unit 3 to the substrate batch forming unit 51 of the interface unit 5. After the substrate W becomes a substrate batch L by the substrate batch forming unit 51, it is transferred from the substrate batch forming unit 51 to the batch processing unit 6. The first transfer robot 53 is, for example, a six-axis robot and includes six rotation axes R1, R2, R3, R4, R5, and R6. In addition, the first transfer robot 53 may be a seven-axis robot. Furthermore, the first transfer robot 53 may not be a multi-joint robot but a vertical robot or the like. The vertical robot may also include a rotation axis. The first transfer robot 53 is provided with a first transfer arm 531 at its front end. The first transfer arm 531 holds the substrate W. The thickness of the first transfer arm 531 is set to a thickness that allows the first transfer arm 531 to be inserted between substrates W arranged at the second pitch P2. A plurality of first transfer arms 531 are provided so that a plurality of substrates W (for example, five substrates, and only two of the five substrates are shown in FIG. 7) can be transferred together. The second transfer robot 54 transfers the substrate W from the batch processing unit 6 to the single-wafer processing unit 3. For example, the second transfer robot 54 transfers the substrate W from the third rinse liquid tank 68 to the liquid processing device 34. When transferring the substrate W from the third rinse liquid tank 68 to the liquid processing device 34, the second transfer robot 54 is used and the second transfer device 32 is not used. Thus, the situation where the second transfer device 32 is wetted by the third rinse liquid can be suppressed. In addition, the transfer source is appropriately selected according to the configuration of the batch processing unit 6. Similarly, the transfer destination is appropriately selected according to the configuration of the single-wafer processing unit 3. The second transfer robot 54 has the same configuration as the first transfer robot 53 and is provided with a second transfer arm 541 at its front end. The second transfer arm 541 holds the substrate W. The thickness of the second transfer arm 541 is set to be such that the second transfer arm 541 can be inserted between the substrates W arranged with a second pitch P2. The second transfer arm 541 is provided with only one for transferring the substrate W one by one, but a plurality of them may also be provided so as to transfer a plurality of substrates W together. Since the second transfer arm 541 lifts the substrate W from the third rinse liquid, it is wetted by the third rinse liquid. In order to suppress the dripping of the third rinse liquid from the second transfer arm 541 to its wrist, the second transfer robot 54 is suspended from the top plate 55 of the interface part 5. On the other hand, the first transfer robot 53 is provided on the bottom plate 56 of the interface part 5. In addition, the arrangements of the second transfer robot 54 and the first transfer robot 53 may be reversed, that is, the first transfer robot 53 can be suspended from the top plate 55 and the second transfer robot 54 can be provided on the bottom plate 56. In this case, the dripping of the third rinse liquid adhering to the second transfer arm 541 to the first transfer robot 53 can be suppressed. The first transfer robot 53 can always transfer the substrate W in a dry state. In addition, both the first transfer robot 53 and the second transfer robot 54 may be suspended from the top plate 55, or both may be provided on the bottom plate 56. In addition, one or more of the first transfer robot 53 and the second transfer robot 54 may be provided on the side wall. The side wall is arranged between the top plate 55 and the bottom plate 56 and is arranged vertically, different from the top plate 55 and the bottom plate 56. The top plate 55 and the bottom plate 56 are arranged horizontally. In addition, in the transfer of the substrate W performed by the second transfer arm 541, in order to prevent the drying of the substrate W, high-humidity gas may be supplied to the substrate W. A gas nozzle for blowing off the droplets adhering to the second transfer arm 541 may also be provided on the second transfer robot 54. In addition, a drain pan for collecting the droplets dripping from the second transfer arm 541 to its wrist may also be provided on the second transfer robot 54. The droplets are condensed from the third rinse liquid or the high-humidity gas. As described above, although embodiments of the substrate processing system and the substrate processing method disclosed in the present invention have been described, the present invention is not limited to the above embodiments and the like. Within the scope described in the claims of the invention, various changes, corrections, substitutions, additions, deletions, and combinations can be made. Naturally, these also belong to the technical scope of the present invention. For example, in the above embodiments and the above modification examples, the substrate cassette C stores the substrates W with a second pitch P2 therebetween inside. However, the substrates W may be stored with a pitch other than the second pitch P2, may be stored with a pitch narrower than the second pitch P2 (for example, the first pitch P1), or may be stored with a pitch wider than the second pitch P2. If the substrate batch releasing unit 81 widens the pitch of the substrates W from the first pitch P1 to the second pitch P2, interference between the substrates W and the transfer robot 54 can be suppressed. In the above embodiments and the above modification examples, the substrate batch forming unit 51 narrows the pitch of the substrates W when forming the substrate batch L. However, the pitch may not be narrowed. For example, when storing a number of substrates W less than the maximum storage number of the substrate cassette C in the substrate cassette C, the substrate batch forming unit 51 may not narrow the pitch of the substrates W. In any case, if the substrate batch releasing unit 81 widens the pitch of the substrates W from the first pitch P1 to the second pitch P2, interference between the substrates W and the transfer robot 54 can be suppressed. In the above embodiments and the above modification examples, the substrate batch releasing unit 81 widens the pitch of the substrates W from the first pitch P1 to the second pitch P2 in a processing liquid in a块状 shape larger than the substrates W. However, the pitch of the substrates W may also be widened from the first pitch P1 to the second pitch P2 in a mist-shaped processing liquid. Even if the processing liquid is in a mist shape, drying of the substrates W can be prevented, so collapse of the uneven patterns on the substrates W can be suppressed. In the above embodiments and the above modification examples, although the transfer unit 52 includes the first transfer robot 53 and the second transfer robot 54 as shown in FIG. 7, it may also include one transfer robot 41 as shown in FIG. 8. The transfer robot 41 serves as both the first transfer robot 53 and the second transfer robot 54. The transfer robot 41 includes the first transfer arm 531 of the first transfer robot 53 and the second transfer arm 541 of the second transfer robot 54. The first transfer arm 531 and the second transfer arm 541 are respectively mounted at the front end of the transfer robot 41. The transfer robot 41 transfers the substrate W from the single-substrate processing unit 3 to the substrate batch forming unit 51 with the first transfer arm 531, and transfers the substrate W from the batch processing unit 6 to the single-substrate processing unit 3 with the second transfer arm 541. As shown in FIG. 8, the transfer robot 41 further includes a moving mechanism 411 that relatively moves the second transfer arm 541 with respect to the first transfer arm 531 in order to independently operate the first transfer arm 531 and the second transfer arm 541. The moving mechanism 411 is, for example, provided at the front end of the transfer robot 41. In FIG. 8, the moving mechanism 411 moves the second transfer arm 541 with respect to the front end of the transfer robot 41, but it is also possible to move the first transfer arm 531 with respect to the front end of the transfer robot 41. The transfer robot 41 can be suspended from the top plate 55 as shown in FIG. 8, can be provided on the bottom plate 56, or can be provided on the side wall. In the above-described embodiment and the above-described modification, although the batch processing unit 6 includes the substrate batch removing unit 81, it may not include at least a part of the substrate batch removing unit 81, and more specifically, does not include the second holding member 814. If the loading / unloading unit 2, the single wafer processing unit 3, the interface unit 5, and the batch processing unit 6 are arranged in this order, and the interface unit 5 includes the substrate batch forming unit 51 and the transfer unit 52, then as described above, the transfer path of the substrate W can be ensured and the substrate processing system 1 can be miniaturized. This is because the loading / unloading unit 2 serves as both the loading unit and the unloading unit. In the above-described embodiment and the above-described modification, the single wafer processing unit 3 includes both the liquid processing device 34 and the drying device 35, but it may only include the drying device 35. In this case, the transfer unit 52 can directly transfer the substrate W to the drying device 35, or the transfer unit 52 can transfer the substrate W to the second transfer device 33, and the second transfer device 32 can transfer the substrate W received from the second transfer device 33 to the drying device 35. In addition, in this case, it is also possible to supply the drying liquid to the top surface of the substrate W to form a liquid film of the drying liquid on the substrate W in a state where the lid portion 354 of the drying device 35 is opened and the holding portion 355 holds the substrate W (the state shown in FIG. 9). 1: Substrate processing system 2: Loading and unloading section 21: Mounting table 22: Mounting plate 23: First transfer area 24: First transfer device 25: Transfer section 26: First transition device 3: Single wafer processing section 31: Second transfer area 32: Second transfer device 33: Second transition device 34: Liquid processing device 35: Drying device 351: Pressure-resistant container 352: Loading and unloading port 353: Movable tray 354: Cover part 355: Holding part 356: Supply port 41: Transfer robot 411: Moving mechanism 5: Interface section 51: Substrate lot forming section 511, 811: First holding tool 512, 812: First arm 513, 813: First holding groove 514, 814: Second holding tool 515, 815: Second arm 516, 816: Second holding groove 517, 817: Passing groove 518, 818: Driving device 52: Transfer section 53: First transfer robot 531: First transfer arm 54: Second transfer robot 541: Second transfer arm 55: Top plate 56: Bottom plate 6: Batch processing section 61: Third transfer area 62: Third transfer device 63: First chemical liquid tank 64: First rinse liquid tank 65: Second chemical liquid tank 66: Second rinse liquid tank 67: Third chemical liquid tank 68: Third rinse liquid tank (processing tank) 71: First processing tool 72: First driving device 73: Second processing tool 74: Second driving device 75: Third processing tool 76: Third driving device 81: Substrate lot releasing section 9: Control section 91: CPU (Central Processing Unit, central processor) 92: Recording medium 93: Input interface 94: Output interface A1, A2, A3, A4, A5: Substrate movement sequence C: Substrate cassette L: Substrate lot P1: First pitch P2: Second pitch R1, R2, R3, R4, R5, R6: Rotation axis W: Substrate FIG. 1 is a top view showing a substrate processing system according to an embodiment. FIG. 2 is a flowchart showing a substrate processing method according to an embodiment. FIG. 3 is a top view showing an example of the substrate batch forming section of FIG. 1. FIG. 4A is a side view showing an example of the operation of the substrate batch forming section of FIG. 3. FIG. 4B is a side view following FIG. 4A and showing an example of the operation of the substrate batch forming section. FIG. 4C is a side view following FIG. 4B and showing an example of the operation of the substrate batch forming section. FIG. 5 is a top view showing an example of the substrate batch releasing section of FIG. 1. FIG. 6A is a sectional view showing an example of the operation of the substrate batch releasing section of FIG. 5. FIG. 6B is a sectional view following FIG. 6A and showing an example of the operation of the substrate batch releasing section. FIG. 6C is a sectional view following FIG. 6B and showing an example of the operation of the substrate batch releasing section. FIG. 7 is a side view showing an example of the transport section of the interface section of FIG. 1. FIG. 8 is a side view showing another example of the transport section. FIG. 9 is a perspective view showing an example of the drying device of FIG. 1. 1: Substrate processing system 2: Loading / unloading section 21: Carrier stage 22: Carrier plate 23: First transport area 24: First transport device 25: Transfer section 26: First transition device 3: Single wafer processing section 31: Second transport area 32: Second transport device 33: Second transition device 34: Liquid processing device 35: Drying device 5: Interface section 51: Substrate batch forming section 52: Transport section 6: Batch processing section 61: Third transport area 62: Third transport device 63: First chemical solution tank 64: First rinse solution tank 65: Second chemical solution tank 66: Second rinse solution tank 67: Third chemical solution tank 68: Third rinse solution tank (processing tank) 71: First processing tool 72: First driving device 73: Second processing tool 74: Second driving device 75: Third processing tool 76: Third driving device 81: Substrate batch removal unit 811: First holder 814: Second holder 818: Driving device 9: Control unit 91: CPU (Central Processing Unit) 92: Recording medium 93: Input interface 94: Output interface A1, A2, A3, A4, A5: Substrate movement sequence C: Substrate cassette L: Substrate batch W: Substrate

Claims

1. A substrate processing system, comprising: The infeed section moves substrate boxes containing multiple substrates in and out; the batch processing section processes a batch of substrates containing multiple substrates together; the single-piece processing section processes each substrate in the batch individually. And the interface, the substrate is transferred between the batch processing unit and the single-piece processing unit; The interface includes: a substrate batch forming section for forming the substrate batch; The unit includes a transfer section that transfers the substrate from the single-wafer processing section to the substrate batch forming section, and transfers the substrate from the batch processing section to the single-wafer processing section; the single-wafer processing section includes a drying apparatus that dries the substrate one by one using supercritical fluid.

2. A substrate processing system, comprising: The infeed section moves substrate boxes containing multiple substrates in and out; the batch processing section processes a batch of substrates containing multiple substrates together; the single-piece processing section processes each substrate in the batch individually. And the interface, the substrate is transferred between the batch processing unit and the single-piece processing unit; The interface includes: a substrate batch forming section for forming the substrate batch; and a transport section for transporting the substrate from the single-wafer processing section to the substrate batch forming section and from the batch processing section to the single-wafer processing section; the single-wafer processing section includes: a liquid processing apparatus for forming a liquid film of drying liquid on the surface of the substrate with a raised and recessed pattern, one by one; and a drying apparatus for drying multiple substrates with the liquid film formed on them together by supercritical fluid.

3. The substrate processing system as described in claim 1 or 2, wherein, The transport unit includes: a first transport robot that transports the substrate from the single-wafer processing unit to the substrate batch forming unit; and a second transport robot that transports the substrate from the batch processing unit to the single-wafer processing unit.

4. The substrate processing system as described in claim 3, wherein, The first transport robot is suspended from the top plate of the interface; the second transport robot is mounted on the bottom plate of the interface.

5. The substrate processing system as described in claim 3, wherein, The first transport robot is mounted on the bottom plate of the interface; the second transport robot is suspended from the top plate of the interface.

6. The substrate processing system of claim 1 or 2, wherein the batch processing unit includes a processing tank for storing a block or mist-like processing liquid for impregnating the batch of substrates; and the transport unit transports the substrate held in the processing liquid from the processing tank of the batch processing unit to the single-wafer processing unit.

7. The substrate processing system as described in claim 6, wherein, The batch processing unit further includes: a transport area, which is rectangular when viewed from above; and a transport device that holds the batch of substrates in the transport area and moves and rotates them; the batch forming unit is arranged next to the short side of the transport area, the processing tank is arranged next to the long side of the transport area, and the transport unit is arranged next to both the batch forming unit and the processing tank.

8. The substrate processing system as described in claim 6, wherein, The processing tank stores pure water used to immerse the batch of substrates.

9. The substrate processing system as described in claim 1 or 2, wherein, The batch processing unit includes a tank for storing dilute hydrofluoric acid used to impregnate the substrate batch.

10. The substrate processing system as described in claim 1 or 2, wherein, The batch processing unit includes a solution tank for storing an aqueous solution of phosphoric acid used to impregnate the substrate batch.

11. The substrate processing system as described in claim 1 or 2, wherein, The batch processing unit includes a tank for storing the chemical solution used to impregnate the substrate batch SC1.

12. The substrate processing system as described in claim 1 or 2, wherein, The batch processing unit includes a tank for storing the SPM solution used to impregnate the substrate batch.

13. The substrate processing system as described in claim 1 or 2, wherein, The single-wafer processing unit includes a liquid processing apparatus that processes the substrate one by one using liquid.

14. A substrate processing method, wherein the substrate is dried by supercritical fluid using a substrate processing system as described in any one of claims 1 to 13.

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