Active gas generation apparatus

Abstract

The purpose of this disclosure is to provide a structure for an active gas generating device that can supply high-purity active gas without complicating the manufacturing process. The electrode unit (81) uses the dielectric film (F2) of the dielectric film (F2) and (F3) as the protected dielectric film, and has a dielectric protective film (FC2) in close contact with the lower surface of the dielectric film (F2). A discharge space (4) is provided in the dielectric space (18) that is the space between the dielectric protective film (FC2) and the dielectric film (F3) facing each other, in a manner that includes the area where the high voltage electrode (F5) and the ground electrode (F6) overlap when viewed from above. The constituent material of the dielectric protective film (FC2) has the protective property of blocking the irradiation of the dielectric film (F2) by ions generated by the dielectric shielding discharge when a dielectric shielding discharge occurs in the discharge space (4), and not reacting chemically with the ions.

Description

Technical Field

[0001] The present disclosure relates to an active gas generation device having an electrode structure in a parallel plate manner and generating active gas by dielectric barrier discharge. Prior Art

[0002] In a conventional active gas generation device having an electrode structure in a parallel plate manner and employing dielectric barrier discharge, a gap between a metal electrode (conductive film for electrode) and a dielectric film (dielectric film for electrode) facing each other or a gap between dielectric films facing each other forms a discharge space.

[0003] The parallel plate type dielectric barrier discharge employed in the conventional active gas generation device causes dielectric barrier discharge to occur in the discharge space, for example, to activate a raw material gas introduced into the discharge space and generate active gas.

[0004] Examples of an active gas generation device employing parallel plate type dielectric barrier discharge include the active gas generation device disclosed in Patent Document 1. <00000!4>[Prior Art Documents] [Patent Documents]

[0005] Patent Document 1: International Publication No. 2019 / 138456 Summary of the Invention Problems to be Solved by the Invention

[0006] Such a conventional active gas generation device causes dielectric barrier discharge to occur in the discharge space. Therefore, depending on the type of the raw material gas and the material of the dielectric film, there is a possibility of a dielectric film reaction phenomenon in which ions generated by dielectric barrier discharge and the dielectric film cause a chemical reaction, and elements or their compounds constituting the dielectric film are released from the dielectric film.

[0007] If the dielectric film reaction phenomenon occurs, the released elements or their compounds will be mixed into the active gas, which means that impurities are mixed into the active gas. In order to prevent such a dielectric film reaction phenomenon, theoretically, it can be addressed by changing the material of the dielectric film to a material that does not cause a chemical reaction.

[0008] However, when the workability of the changed material is poor and the shape of the dielectric film is complex, there is a problem that the manufacturing process for forming the dielectric film with a complex shape becomes complicated.

[0009] Thus, a conventional active gas generation device has a problem that it cannot suppress the above-described dielectric film reaction phenomenon and cannot generate a high-purity active gas without complicating the manufacturing process.

[0010] The present disclosure solves the above-described problems, and an object thereof is to provide an active gas generation device that can supply a high-purity active gas without complicating the manufacturing process. Means for Solving the Problem

[0011] The active gas generation device of the present disclosure includes an electrode unit that activates a raw material gas supplied to a discharge space to generate an active gas; the electrode unit includes: a first electrode component; and a second electrode component provided below the first electrode component; the first electrode component includes a dielectric film for the first electrode and a conductive film for the first electrode, and the conductive film for the first electrode is provided on the upper surface of the dielectric film for the first electrode; the second electrode component includes a dielectric film for the second electrode and a conductive film for the second electrode, and the conductive film for the second electrode is provided on the lower surface of the dielectric film for the second electrode; a dielectric space is provided between the dielectric film for the first electrode and the dielectric film for the second electrode; the discharge space includes a main discharge space, and the main discharge space is an area where the conductive films for the first and second electrodes overlap when viewed from above within the dielectric space; the electrode unit further includes a dielectric protection member provided on the dielectric space side with respect to a protection target dielectric film belonging to at least one of the dielectric film for the first electrode and the dielectric film for the second electrode; the constituent material of the dielectric protection member has a protection property that blocks irradiation of ions generated by the dielectric shielding discharge to the protection target dielectric film and does not chemically react with the ions when a dielectric shielding discharge occurs in the discharge space. Effect of the Invention

[0012] In the active gas generation device of the present disclosure, since the dielectric protection member having the above-described protection property exists between the dielectric space including the discharge space and the protection target dielectric film, it is possible to suppress the dielectric film reaction phenomenon in which the protection target dielectric film reacts with ions when a dielectric shielding discharge occurs in the discharge space.

[0013] As a result, the active gas generating device disclosed herein can effectively prevent elements of the dielectric film to be protected from being mixed into the discharge space due to dielectric film reaction phenomena, thereby generating high-purity active gas.

[0014] Furthermore, the electrode unit does not need to change the constituent materials of the first and second electrode dielectric films, and can be constructed by simply adding a dielectric protection member, so the manufacturing steps of the electrode unit are not complicated.

[0015] The objects, features, aspects and advantages of the present disclosure will become more apparent from the following detailed description and accompanying drawings. Simple diagram description

[0016] FIG1 is a top view schematically showing the planar structure of the active gas generating device according to the first embodiment of the present disclosure. FIG2 is a cross-sectional view showing the cross-sectional structure of the AA cross section in FIG1 . FIG3 is an explanatory diagram schematically showing a planar structure of an electrode unit (Part 1). FIG. 4 is an explanatory diagram showing the cross-sectional structure of the BB cross section in FIG. 3 . FIG5 is an explanatory diagram schematically showing a planar structure of an electrode unit (part 2). FIG6 is an explanatory diagram showing the cross-sectional structure of the CC cross section of FIG5. FIG. 7 is an explanatory diagram schematically showing a planar structure of a housing. FIG8 is an explanatory diagram schematically showing a cross-sectional structure of a housing. FIG. 9 is an explanatory diagram schematically showing a planar structure of a high-voltage-side dielectric film. FIG10 is an explanatory diagram schematically showing a cross-sectional structure of a high-voltage-side dielectric film. FIG. 11 is an explanatory diagram schematically showing a planar structure of a ground-side dielectric film. FIG12 is an explanatory diagram schematically showing a cross-sectional structure of a ground-side dielectric film. FIG. 13 is an explanatory diagram schematically showing a planar structure of a power feeder. FIG14 is an explanatory diagram schematically showing a cross-sectional structure of a power feeder. FIG. 15 is an explanatory diagram schematically showing a planar structure of a ground conductor. FIG16 is an explanatory diagram schematically showing a cross-sectional structure of a ground conductor. FIG. 17 is an explanatory diagram showing the details of the focus area in FIG. 16 . FIG. 18 is an explanatory diagram schematically showing a planar structure of a cover dielectric film. FIG19 is an explanatory diagram schematically showing a cross-sectional structure of a cover dielectric film. FIG. 20 is an explanatory diagram schematically showing a planar structure of a ground-side electrode configuration portion. FIG21 is an explanatory diagram schematically showing a cross-sectional structure of a ground-side electrode configuration portion. FIG. 22 is an explanatory diagram schematically showing a planar structure of a shielding dielectric film. FIG23 is an explanatory diagram schematically showing a cross-sectional structure of a shielding dielectric film. FIG. 24 is an explanatory diagram schematically showing a planar structure of a dielectric film supporting member. FIG25 is an explanatory diagram schematically showing a cross-sectional structure of a dielectric film supporting member. FIG. 26 is an explanatory diagram schematically showing a planar structure of a dielectric film press member. FIG. 27 is an explanatory diagram schematically showing a cross-sectional structure of a dielectric film press member. FIG. 28 is an explanatory diagram showing the details of the focus area in FIG. 27 . FIG. 29 is an explanatory diagram schematically showing a planar structure of a pressing member. FIG30 is an explanatory diagram schematically showing a cross-sectional structure of a pressing member. FIG31 is an explanatory diagram schematically showing a jetting pattern of active gas from an electrode unit in the active gas generating device according to Embodiment 1. FIG. FIG32 is an explanatory diagram schematically showing an ideal ejection pattern of active gas in the electrode unit of Embodiment 1. FIG. FIG33 is an explanatory diagram showing a cross-sectional structure of an electrode unit in the active gas generating device according to Embodiment 2. FIG. FIG34 is an explanatory diagram schematically showing the structure of the ground conductor of Embodiment 2 (Part 1). FIG35 is an explanatory diagram schematically showing the structure of the ground conductor of the second embodiment (Part 2). FIG36 is an explanatory diagram schematically showing the cross-sectional structure of a plurality of gas ejection ports in Embodiment 2 (Part 1). FIG37 is an explanatory diagram schematically showing the cross-sectional structure of a plurality of gas ejection ports in Embodiment 2 (Part 2). FIG38 is an explanatory diagram (Part 1) showing the ejection pattern of the active gas in the housing opening of the electrode unit according to Embodiment 2. FIG. FIG39 is an explanatory diagram (part 2) showing the ejection pattern of the active gas in the opening of the case of the electrode unit according to the second embodiment. FIG40 is an explanatory diagram (Part 3) showing the ejection pattern of the active gas in the housing opening of the electrode unit according to Embodiment 2. FIG. FIG41 is an explanatory diagram (Part 4) showing the ejection pattern of the active gas in the housing opening of the electrode unit according to Embodiment 2. FIG. FIG42 is an explanatory diagram schematically showing a basic aspect of an electrode unit used in the active gas generating device of Embodiment 3. FIG. FIG43 is an explanatory diagram showing the concept of an electrode unit used in the active gas generating device according to the second aspect of the third embodiment. FIG44 is an explanatory diagram showing a cross-sectional structure of an electrode unit 811 used in the active gas generating device according to the second aspect of the third embodiment. FIG45 is an explanatory diagram schematically showing the planar structure of the dielectric film supporting member shown in FIG44. FIG46 is an explanatory diagram schematically showing a basic aspect of an electrode unit used in the active gas generating device of Embodiment 4. FIG. FIG47 is an explanatory diagram schematically showing a basic aspect of an electrode unit used in the active gas generating device of Embodiment 5. FIG. FIG48 is an explanatory diagram schematically showing the concept of an electrode unit 830 used in the active gas generating device according to the second aspect of the fifth embodiment. FIG49 is an explanatory diagram showing a cross-sectional structure of an electrode unit 831 used in the active gas generating device according to the second aspect of the fifth embodiment. FIG50 is an explanatory diagram schematically showing the detailed structure of the focus area of ​​FIG49. FIG51 is an explanatory diagram schematically showing the planar structure of the dielectric film supporting member shown in FIG49. FIG52 is an explanatory diagram schematically showing a basic aspect of an electrode unit used in the active gas generating device of the sixth embodiment. FIG53 is an explanatory diagram schematically showing a basic aspect of an electrode unit used in the active gas generating device of Embodiment 7. FIG. FIG54 is an explanatory diagram (part 1) for illustrating the effect of the active gas generating device of embodiment 7. FIG55 is an explanatory diagram (part 2) for showing the effect of the active gas generating device of embodiment 7. FIG56 is an explanatory diagram (part 3) for showing the effect of the active gas generating device of embodiment 7. FIG57 is an explanatory diagram showing a cross-sectional structure of an electrode unit used in the active gas generating device according to the second aspect of the seventh embodiment. FIG58 is an explanatory diagram showing the details of the focus area of ​​FIG57. FIG59 is an explanatory diagram showing the cross-sectional structure of the active gas generating device of the first aspect and the second aspect of embodiment 8. FIG. FIG60 is an explanatory diagram showing the detailed structure of the focus area of ​​FIG59 in the first aspect of embodiment 8. FIG. FIG61 is an explanatory diagram showing the detailed structure of the focus area of ​​FIG59 in the second aspect of embodiment 8. FIG. Implementation Method

[0017] <Implementation Type 1> FIG1 is a top view schematically showing the planar structure of an active gas generating device 71 according to Embodiment 1 of the present disclosure.

[0018] As shown in FIG1 , an active gas generating device 71 houses three electrode units 51 to 53 within a housing 1 . A raw material gas G1 is supplied to each of the electrode units 51 to 53 via a gas flow path 21 . Each of the electrode units 51 to 53 activates the raw material gas G1 supplied to the discharge space 4 to generate an active gas G2.

[0019] FIG2 is a cross-sectional view showing the cross-sectional structure of the AA section of FIG1 . FIG3 to FIG6 are explanatory diagrams partially illustrating the structure of electrode unit 50. Electrode unit 50 corresponds to any of electrode units 51 to 53. Electrode units 51 to 53 have the same structure.

[0020] Fig. 3 is an explanatory diagram schematically showing a planar structure of the electrode unit 50. Fig. 4 is an explanatory diagram showing a cross-sectional structure taken along line BB in Fig. 3. Figs. 3 and 4 are first explanatory diagrams showing the structure of the ground conductor 6 and its surroundings.

[0021] Fig. 5 is an explanatory diagram schematically showing a planar structure of the electrode unit 50. Fig. 6 is an explanatory diagram showing a cross-sectional structure taken along line CC of Fig. 5. Figs. 5 and 6 are second explanatory diagrams showing a detailed structure of the ground conductor 6 and its surroundings.

[0022] Figures 7 to 30 are explanatory diagrams showing details of the components of the electrode unit 50. Figures 7 and 8 are explanatory diagrams schematically showing the structure of the housing 1. Figure 7 shows the planar structure of the housing 1, and Figure 8 shows the cross-sectional structure of the housing 1.

[0023] 9 and 10 are explanatory diagrams schematically showing the structure of the high-voltage-side dielectric film 2. FIG9 shows the planar structure of the high-voltage-side dielectric film 2, and FIG10 shows the cross-sectional structure of the high-voltage-side dielectric film 2.

[0024] 11 and 12 are explanatory diagrams schematically showing the structure of the ground-side dielectric film 3. FIG11 shows the planar structure of the ground-side dielectric film 3, and FIG12 shows the cross-sectional structure of the ground-side dielectric film 3.

[0025] 13 and 14 are explanatory diagrams schematically showing the structure of the power supply 5. FIG13 shows the planar structure of the power supply 5, and FIG14 shows the cross-sectional structure of the power supply 5.

[0026] 15 to 17 are explanatory diagrams schematically showing the structure of the ground conductor 6. FIG15 shows the planar structure of the ground conductor 6, FIG16 shows the cross-sectional structure of the ground conductor 6, and FIG17 shows the details of the focus region R1 of FIG16.

[0027] 18 and 19 are explanatory diagrams schematically showing the structure of the cover dielectric film 8. FIG18 shows the planar structure of the cover dielectric film 8, and FIG19 shows the cross-sectional structure of the cover dielectric film 8.

[0028] Figures 20 and 21 are schematic diagrams illustrating the structure of the ground-side electrode configuration section E2. Figure 20 shows the planar structure of the ground-side electrode configuration section E2, while Figure 21 shows the cross-sectional structure of the ground-side electrode configuration section E2. The ground-side electrode configuration section E2 comprises a combined structure of a ground-side dielectric film 3, a conductive film 7, and a cover dielectric film 8.

[0029] 22 and 23 are explanatory diagrams schematically showing the structure of the shielding dielectric film 9. FIG22 shows the planar structure of the shielding dielectric film 9, and FIG23 shows the cross-sectional structure of the shielding dielectric film 9.

[0030] 24 and 25 are explanatory diagrams schematically showing the structure of the dielectric film support member 10. FIG24 shows the planar structure of the dielectric film support member 10, and FIG25 shows the cross-sectional structure of the dielectric film support member 10.

[0031] 26 to 28 are explanatory diagrams schematically showing the structure of the dielectric film press member 11. FIG26 shows the planar structure of the dielectric film press member 11, FIG27 shows the cross-sectional structure of the dielectric film press member 11, and FIG28 shows the details of the focus area R2 of FIG27.

[0032] 29 and 30 are explanatory diagrams schematically showing the structure of the pressing member 12. FIG29 shows the planar structure of the pressing member 12, and FIG30 shows the cross-sectional structure of the pressing member 12.

[0033] 1 through 30 schematically illustrate the active gas generator 71, the electrode unit 50, or the components of the electrode unit 50. The shapes, including the scale, are not necessarily consistent between FIG1 through FIG30. Furthermore, FIG1 through FIG30 each depict an XYZ rectangular coordinate system.

[0034] Hereinafter, the active gas generating device 71 of the embodiment 1 will be described with reference to the above-mentioned FIG. 1 to FIG. 30 as appropriate.

[0035] (Overall structure) As shown in FIG1 , the active gas generating device 71 includes electrode units 51 to 53 and a housing 1 . The electrode units 51 to 53 are a plurality of electrode units. The housing 1 is conductive and accommodates the electrode units 51 to 53 in a housing inner space S1 (see FIG8 ).

[0036] As shown in FIG. 2 and FIG. 7 , the housing 1 includes a housing bottom 1 a , which includes a flat surface 1F and a conductor receiving space 6S recessed from the flat surface 1F in a depth direction.

[0037] As shown in FIG8 , the housing 1 includes a housing bottom 1a , a housing side 1b , and a housing top 1c , and the housing bottom 1a , the housing side 1b , and the housing top 1c form a housing inner space S1 for accommodating the electrode units 51 to 53 .

[0038] Electrode units 51 to 53 are housed within housing interior space S1 of housing 1, with ground conductor 6 disposed within conductor housing space 6S. As shown in FIG7 , externally supplied raw material gas G1 is supplied via gas flow path 21 provided within housing bottom 1 a to raw material gas flow spaces provided on the lower surface and side surfaces of ground conductor 6 disposed within conductor housing space 6S.

[0039] The electrode unit 51 (50) includes a high-voltage side electrode component E1 as a first electrode component and a ground side electrode component E2 as a second electrode component provided below the high-voltage side electrode component E1.

[0040] The electrode unit 51 further includes a ground conductor 6 as a reference potential conductor. The ground conductor 6 is provided below the ground-side electrode component E2 as the second electrode component and is accommodated in the conductor accommodation space 6S. The ground conductor 6 is made of a conductive material such as metal.

[0041] The high-voltage-side electrode configuration section E1, serving as the first electrode configuration section, includes a high-voltage-side dielectric film 2 serving as the first electrode dielectric film, and a power feeder 5 serving as the first electrode conductive film formed on the upper surface of the high-voltage-side dielectric film 2. Furthermore, the power feeder 5 serving as the first electrode conductive film is disposed within a power feeder placement recess 28 located in the center of the high-voltage-side dielectric film 2 serving as the first electrode dielectric film.

[0042] The high-voltage side dielectric film 2 is made of a dielectric material, while the power supply 5 is made of a conductive material such as metal. For example, the power supply 5 is made of metal.

[0043] The ground-side electrode forming portion E2 includes a ground-side dielectric film 3 serving as a second electrode dielectric film, and a conductive film 7 serving as a second electrode conductive film formed on the lower surface of the ground-side dielectric film 3. Since the conductive film 7 is relatively thin, it is omitted from illustration in FIG. 2 , but the region where the conductive film 7 is formed is shown in FIG. 20 and FIG. 21 .

[0044] The ground-side dielectric film 3 is made of a dielectric material, while the conductive film 7 is made of a conductor such as metal.

[0045] The ground conductor 6, serving as a reference potential conductor, has a non-through active gas buffer space 68 at its upper portion, and the ground-side electrode component E2 is arranged to block the active gas buffer space 68. Therefore, outside the active gas buffer space 68, the lower surface of the conductive film 7 is in contact with the upper surface of the ground conductor 6.

[0046] The ground side dielectric film 3 serving as the second electrode dielectric film has a dielectric through-hole 3h penetrating the ground side dielectric film 3 in an area overlapping with the buffer space 68 for active gas when viewed from above. The conductive film 7 serving as the second electrode conductive film has a conductive film opening 7h in an area overlapping with the buffer space 68 for active gas when viewed from above. The conductive film opening 7h overlaps with the dielectric through-hole 3h when viewed from above.

[0047] The bottom 1a of the housing 1 has a gas flow path 21 for receiving the raw material gas G1 from the outside. A raw material gas flow space is provided between the ground conductor 6 and the conductor storage space 6S of the housing 1. As described later, the raw material gas flow space includes a raw material gas buffer space 61, a micro-slit space 62, and a side space 63.

[0048] The raw material gas G1 is guided to the main discharge space of the discharge space 4 via the gas flow path 21 and the raw material gas circulation space. As will be described later, the main discharge space refers to the discharge space 4 within the dielectric space 18 between the high-side dielectric film 2 and the ground-side dielectric film 3.

[0049] The AC voltage applied from the AC power source 15 is applied to the power supply 5 as the first electrode conductive film via electrical connection means such as electrical wiring or lead-in terminals.

[0050] On the other hand, the housing 1 is set to the ground potential as a reference potential. Therefore, the conductive film 7 as the second electrode conductive film is set to the ground potential via the housing 1 and the ground conductor 6.

[0051] The electrode unit 51 (50) further comprises auxiliary components such as a dielectric film supporting component 10, a dielectric film pressing component 11 and a pressing component 12.

[0052] (Securing the High-Voltage Side Dielectric Film 2) The stepped portion 102 of the dielectric film support member 10 is provided on the flat surface 1F of the housing 1 and has an upper surface that forms a support surface 10F for supporting the high-voltage-side dielectric film 2 from below. The dielectric film support member 10 is positioned on the flat surface 1F so that the side surfaces of the dielectric film support member 10 are aligned with the side surfaces of the conductor-accommodating space 6S in the housing bottom 1a of the housing 1.

[0053] The dielectric film pressing member 11 is used to press the high-voltage-side dielectric film 2 from above and does not overlap with the power supply 5 when viewed from above. That is, an exposed area EX2 exists on the upper surface of the high-voltage-side dielectric film 2 where the dielectric film pressing member 11 and the power supply 5 are not formed.

[0054] As shown in Figures 6, 27, and 28, the lower surface of the dielectric film pressing member 11 has a dielectric contact region 112 that contacts the upper surface of the high-voltage-side dielectric film 2, and a dielectric non-contact region 111 that does not contact the upper surface of the high-voltage-side dielectric film 2. The dielectric contact region 112 is in contact with the high-voltage-side dielectric film 2, where a load is applied. The dielectric non-contact region 111 is not in contact with the high-voltage-side dielectric film 2 and is an area on the upper surface of the high-voltage-side dielectric film 2 that is pushed toward the power supply 5.

[0055] The dielectric contact region 112 overlaps with the peripheral region of the high-side dielectric film 2 and the support surface 10F of the dielectric film support member 10 when viewed from above. Furthermore, the dielectric non-contact region 111 overlaps with the intermediate region of the high-side dielectric film 2, located further inward than the peripheral region, when viewed from above. In other words, the intermediate region is the region extending from the peripheral region of the high-side dielectric film 2 to the side adjacent to the power supply 5.

[0056] The dielectric film pressing member 11 is made of metal or the like and is conductive, and is set to a ground potential as a reference potential via the housing 1, the mounting bolts 31, and the pressing member 12. The mounting bolts 31 and the pressing member 12 are also conductive.

[0057] Therefore, the high-voltage side dielectric film 2 is pressed from above by the dielectric film pressing member 11 in the dielectric body contact area 112. The combined structure of the dielectric film supporting member 10, the dielectric film pressing member 11 and the pressing member 12 will be described in detail below.

[0058] As shown in FIG. 2 , the pressing member 12 is disposed on the upper surface of the dielectric film supporting member 10 , and the pressing member 12 and the dielectric film supporting member 10 are fixed to the housing bottom 1 a of the housing 1 by mounting bolts 31 .

[0059] As shown in Figures 24 and 25 , when viewed from above, the dielectric film support member 10 has a circular shape with a central opening 100 at its center. A stepped structure, consisting of a stepped portion 102 and a peripheral upper surface 101, is provided in an annular pattern around the central opening 100. The upper surface of the stepped portion 102 serves as a support surface 10F. A plurality of through-holes 10h are dispersed and circularly provided on the peripheral upper surface 101 on the outer periphery of the stepped portion 102 (support surface 10F).

[0060] On the other hand, as shown in Figures 9 and 10 , the high-side dielectric film 2 has a circular shape in plan view, with a power supply placement recess 28 at its center. A peripheral surface region 27 is provided in an annular shape around power supply placement recess 28. Furthermore, the high-side dielectric film 2 has a concave bottom surface 26 that is circular in plan view, and a convex bottom surface 23 that has an annular bottom surface around concave bottom surface 26 in plan view.

[0061] As shown in Figures 13 and 14, the power supply 5 has a cylindrical shape and is arranged on the upper surface of the high-voltage-side dielectric film 2 so that its bottom surface is located on the power supply placement recess 28 of the high-voltage-side dielectric film 2.

[0062] An AC voltage is applied to the power supply 5 as the first electrode conductive film by the AC power supply 15. As shown in FIG5 , the power supply placement recess 28 includes the power supply 5 in a plan view and has a planar shape slightly wider than the power supply 5 .

[0063] The high-side dielectric film 2 is disposed on the dielectric film support member 10 so that its support surface 10F contacts the bottom surface 23 of the projection of the high-side dielectric film 2. The high-side dielectric film 2 and the dielectric film support member 10 are in contact via a sealing member such as an O-ring (not shown).

[0064] As shown in Figures 26 and 27 , when viewed from above, dielectric film press member 11 has a circular shape with a central opening 110 at its center. The annular lower surface area located outside central opening 110 serves as dielectric non-contact area 111, while the annular lower surface area located outside dielectric non-contact area 111 serves as dielectric contact area 112.

[0065] As shown in FIG28 , dielectric contact region 112 protrudes further downward (in the −Z direction) than dielectric non-contact region 111 and is in contact with upper surface U2 of high-side dielectric film 2. In contrast, dielectric non-contact region 111 has a gap SP11 between it and upper surface U2 of high-side dielectric film 2, thus forming a non-contact relationship with upper surface U2 of high-side dielectric film 2.

[0066] As shown in Figures 29 and 30, when viewed from above, the pressing member 12 has a circular shape with a central opening 120 at its center. A plurality of inner through-holes 121h are dispersed and circularly provided in an outer peripheral region 125 on the outer periphery of the central opening 120, and a plurality of outer through-holes 122h are dispersed and circularly provided on the outer periphery of the plurality of inner through-holes 121h.

[0067] As described above, the plurality of inner through-holes 121h and the plurality of outer through-holes 122h are provided in the outer peripheral region 125 of the pressing member 12. In addition, each of the plurality of inner through-holes 121h is formed as a through-hole processed by threading.

[0068] A portion of the outer peripheral region 125 of the pressing member 12 of the above-described structure is placed on the dielectric film support member 10, and the dielectric film support member 10 and the pressing member 12 are fixed to the housing bottom 1a of the housing 1 by a plurality of mounting bolts 31. The threaded portions of the plurality of mounting bolts 31 penetrate the plurality of outer through-holes 122h and the plurality of through-holes 10h and are mounted to the housing bottom 1a.

[0069] As shown in FIG. 2 to FIG. 6 , the pressing member 12 is disposed in a region overlapping the dielectric film supporting member 10 and the dielectric film pressing member 11 when viewed from above.

[0070] Meanwhile, the plurality of auxiliary pressing members 32 are attached to the pressing member 12 so as to penetrate the plurality of inner through-holes 121h of the pressing member 12. Examples of the auxiliary pressing members 32 include bolts or setscrews. The plurality of auxiliary pressing members 32 are attached to the plurality of inner through-holes 121h to press the dielectric film pressing member 11. When viewed from above, the plurality of auxiliary pressing members 32 are positioned so as to overlap the dielectric contact region 112 of the dielectric film pressing member 11 and the bottom surface 23 of the raised portion of the high-voltage-side dielectric film 2.

[0071] Therefore, the high-voltage-side dielectric film 2 is pressed from the upper dielectric contact region 112 by the dielectric film pressing member 11 receiving the pressing force of the plurality of pressing auxiliary members 32 .

[0072] As described above, in the electrode unit 50 of the active gas generating device 71 of embodiment 1, the high-side dielectric film 2, serving as the first electrode dielectric film, is pressed from above the dielectric contact region 112 by the dielectric film pressing member 11, which receives the pressing force of the plurality of auxiliary pressing members 32. Therefore, the area where the load is applied to the high-side dielectric film 2 by the dielectric film pressing member 11 is limited to the area below the dielectric contact region 112.

[0073] As a result, the active gas generating device 71 of embodiment 1 can fix the high-side dielectric film 2 with good stability between the dielectric body contact area 112 of the dielectric film pressing member 11 and the supporting surface 10F of the dielectric film supporting member 10 without applying unnecessary bending stress to the high-side dielectric film 2.

[0074] The dielectric film pressing member 11 is set to a ground potential as a reference potential and has conductivity. The dielectric non-contact region 111 of the dielectric film pressing member 11 overlaps with the middle region of the high-voltage side dielectric film 2 in a plan view.

[0075] Therefore, the electrode unit 50 can reduce the electric field strength of the power supply 5 by using the dielectric film pressing component 11 having the dielectric non-contact area 111, thereby reducing the potential in the middle area of ​​the high-voltage side dielectric film 2, thereby reducing the potential in the outer diameter direction of the high-voltage side dielectric film 2 and the ground side dielectric film 3.

[0076] As a result, the electrode unit 50 of the active gas generating device 71 of the first embodiment can reliably prevent electrical breakdown in the gap 20 between the high-voltage side dielectric film 2 and the dielectric film supporting member 10 .

[0077] (Ground conductor 6) As shown in FIG. 15 to FIG. 17 , the ground conductor 6 accommodated in the conductor accommodating space 6S of the housing 1 is circular in plan view and has a raw gas buffer space 61 and a micro-slit space 62 at the end region of the bottom surface.

[0078] The raw gas buffer space 61 is annular in plan view and is connected to the gas flow path 21 as shown in FIG. 2 . The raw gas G1 supplied from the outside can be introduced into the raw gas buffer space 61 through the gas flow path 21 .

[0079] The plurality of micro-slit spaces 62 are dispersed around the raw gas buffer space 61. As shown in FIG17 , the plurality of micro-slit spaces 62 are each connected to the raw gas buffer space 61 and allow the raw gas G1 to flow from the raw gas buffer space 61 to the micro-slit spaces 62.

[0080] As shown in FIG6 and FIG17, the side space 63 is a gap space between the inner peripheral side surface of the conductor accommodating space 6S and the outer peripheral side surface of the ground conductor 6, and is provided in a circular ring shape when viewed from above.

[0081] The dielectric film support member 10 and the ground conductor 6 have a positional relationship as shown in FIG. 3 and FIG. 4 . Therefore, the raw material gas G1 passing through the side space 63 is supplied to the lower side region R10 of the dielectric film support member 10 .

[0082] Thus, the raw gas buffer space 61 is provided on the lower surface side of the ground conductor 6 and receives the raw gas G1 through the gas flow path 21. The plurality of micro-slit spaces 62 are each provided on the lower surface side of the ground conductor 6 and connected to the raw gas buffer space 61.

[0083] The side space 63 is provided on the side of the ground conductor 6 and is connected to the plurality of micro-slit spaces 62. As described above, the raw material gas flow space includes the raw material gas buffer space 61, the plurality of micro-slit spaces 62, and the side space 63.

[0084] Therefore, the source gas G1 supplied from the outside to the gas flow path 21 is guided to the discharge space 4 via the source gas buffer space 61 , the micro-slit space 62 , and the side space 63 .

[0085] The plurality of micro-slit spaces 62 are each configured as a narrow space that is less prone to the flow of the raw gas than the raw gas buffer space 61. This allows the raw gas G1 to temporarily stagnate in the raw gas buffer space 61 before flowing into each of the plurality of micro-slit spaces 62. Specifically, the conductivity of the plurality of micro-slit spaces 62 is configured to be lower than that of the raw gas buffer space 61 or the side spaces 63. The conductivity is a coefficient indicating the ease with which the raw gas G1 flows.

[0086] As a result, the active gas generator 71 of embodiment 1 can supply the raw material gas G1 to the discharge space 4 in a spatially uniform manner. That is, the raw material gas G1 is uniformly supplied from the peripheral portion of the circular dielectric space 18 in plan view to the central discharge space 4.

[0087] By reducing the flow conductivity of the micro-slit spaces 62 and increasing the pressure difference between the source gas buffer space 61 and the side spaces 63, the unevenness in the flow rate of the source gas G1 flowing through the plurality of micro-slit spaces 62 is reduced. As a result, the source gas G1 is uniformly supplied to the discharge space 4. The flow rate of the source gas G1 is adjusted, for example, by a mass flow controller (MFC) located upstream of the gas flow path 21.

[0088] Therefore, if the raw material gas G1 is not uniformly supplied in a conventional active gas generating device, the time it takes for the raw material gas G1 to pass through the discharge space 4 may vary, resulting in a disadvantage in that the generation efficiency of the active gas G2 is reduced. The active gas generating device 71 of embodiment 1 can uniformly supply the raw material gas G1, thus avoiding such disadvantages.

[0089] (Ground-Side Electrode Configuration Portion E2 and Active Gas Buffer Space 68) As configured above, the ground-side electrode configuration portion E2 as the second electrode configuration portion includes the ground-side dielectric film 3 and the conductive film 7 .

[0090] As shown in FIG. 11 and FIG. 12 , the ground-side dielectric film 3 is circular in plan view and has a circular dielectric through-hole 3 h at the center.

[0091] As shown in Figures 18 and 19 , the cover dielectric film 8 is circular in plan view and has a circular cover through-hole 8h at its center. It is also preferable that the cover dielectric film 8 be made of the same material as the ground-side dielectric film 3. This is to prevent deformation caused by differences in thermal expansion coefficients between the cover dielectric film 8 and the ground-side dielectric film 3. Alternatively, materials with similar thermal expansion coefficients may be selected for the cover dielectric film 8 and the ground-side dielectric film 3.

[0092] As shown in FIG. 20 and FIG. 21 , the conductive film 7 is circular in plan view and has a conductive film opening 7h in the center which is circular in plan view.

[0093] When viewed from above, the dielectric through-hole 3h and the conductive film opening 7h each overlap with the active gas buffer space 68. As shown in FIG. 21 , the conductive film opening 7h includes the dielectric through-hole 3h when viewed from above and is wider than the dielectric through-hole 3h.

[0094] The conductive film 7 is provided on the lower surface of the ground-side dielectric film 3 so that the centers of the ground-side dielectric film 3 and the conductive film 7 are aligned. The diameter of the conductive film 7 is set to be approximately the same as that of the ground-side dielectric film 3, but a conductive film opening 7h is provided at the center that is wider than the dielectric through-hole 3h. Accordingly, the area of ​​the conductive film 7 is smaller than that of the ground-side dielectric film 3.

[0095] The conductive film inner boundary 7e, forming the circumferential outer line of the conductive film opening 7h, forms the end of the conductive film 7 on the dielectric through-hole 3h side. The conductive film 7 is not formed in the area further inward from the conductive film inner boundary 7e. The conductive film inner boundary 7e forms the electrode boundary line of the conductive film 7. Therefore, as shown in FIG21 , the conductive film 7 formation area A7 on the lower surface of the ground-side dielectric film 3 is the area extending from the outer periphery of the ground-side dielectric film 3 to the conductive film inner boundary 7e.

[0096] As shown in Figures 20 and 21, the cover dielectric film 8 is circularly arranged so as to extend from the lower surface of the ground-side dielectric film 3 to the lower surface of the conductive film 7, including the inner boundary 7e of the conductive film. However, the cover dielectric film 8 has a cover through-hole 8h at its center. In other words, the outer diameter of the conductive film opening 7h of the conductive film 7 is shorter than the outer diameter of the cover dielectric film 8.

[0097] Covering through-hole 8h has a shape roughly identical to dielectric through-hole 3h. Covering through-hole 8h is contained within conductive film opening 7h and is narrower than conductive film opening 7h. Therefore, covering dielectric film 8 covers inner boundary 7e (electrode boundary) of conductive film 7. Furthermore, the lower surface of conductive film 7, not covered by covering dielectric film 8, is in contact with the upper surface of ground conductor 6.

[0098] As shown in FIG. 15 and FIG. 16 , the active gas buffer space 68 provided on the upper portion of the ground conductor 6 is circular in plan view, and a plurality of gas ejection ports 69 are provided around the bottom surface 65 of the active gas buffer space 68 .

[0099] 15 and 16 also show the formation area of ​​the cover dielectric film 8. As shown in these figures, the outer periphery of the cover dielectric film 8 is substantially the same as the outer periphery of the active gas buffer space 68.

[0100] As shown in FIG. 2 and FIG. 16 , the shielding dielectric film 9 is provided on the bottom surface 65 of the active gas buffer space 68 .

[0101] As shown in FIG. 22 and FIG. 23 , the shielding dielectric film 9 is formed to have a predetermined film thickness so as to have a circular shape when viewed from above.

[0102] The shielding dielectric film 9 is provided on the bottom surface 65 of the active gas buffer space 68 in such a manner that the center positions of the active gas buffer space 68 and the shielding dielectric film 9 coincide with each other.

[0103] As shown in FIG. 15 and FIG. 16 , the plurality of gas ejection ports 69 overlap with the cover dielectric film 8 in a plan view, and do not overlap with the dielectric through-hole 3 h and the cover through-hole 8 h in a plan view.

[0104] 16 , the plurality of gas ejection ports 69 penetrate the ground conductor 6 and are provided around the bottom surface 65 of the active gas buffer space 68. That is, the plurality of gas ejection ports 69 are provided in the peripheral region of the shielding dielectric film 9 in a plan view.

[0105] In the active gas generating device 71 of the embodiment 1 having the above-described structure, the raw material gas G1 is supplied from the outside of the metal casing 1 to the discharge space 4 through the gas flow path 21 and the raw material gas circulation space as described above.

[0106] When the raw material gas G1 is supplied to the discharge space 4 where dielectric barrier discharge occurs, the raw material gas G1 is activated and becomes the reactive gas G2. This gas is then introduced into the reactive gas buffer space 68 through the dielectric through-hole 3h and the cover through-hole 8h. The reactive gas G2 entering the reactive gas buffer space 68 is supplied to the subsequent processing space through a plurality of gas ejection ports 69 provided on the bottom surface of the reactive gas buffer space 68.

[0107] In the active gas generating device 71 of embodiment 1 constructed as described above, the main dielectric space where the high-side dielectric film 2 (the first electrode dielectric film) and the ground-side dielectric film 3 (the second electrode dielectric film) face each other is referred to as dielectric space 18. Dielectric space 18 is circular in plan view. Furthermore, the space where the high-side dielectric film 2 and the shielding dielectric film 9 face each other is referred to as the auxiliary dielectric space. Discharge space 4 comprises the main discharge space where the power supply 5 and the conductive film 7 overlap in plan view within dielectric space 18.

[0108] To form the main discharge space, the high-voltage-side dielectric film 2 and the ground-side dielectric film 3 are disposed at a fixed distance in the height direction (Z direction) so that the main discharge space of the discharge space 4 exists within the dielectric space 18 between the high-voltage-side dielectric film 2 and the ground-side dielectric film 3.

[0109] The discharge space 4 further includes an auxiliary discharge space 44 , which is formed by the dielectric through-hole 3 h , the cover through-hole 8 h , and a portion of the active gas buffer space 68 on the shielding dielectric film 9 within the auxiliary dielectric space.

[0110] The bottom surface area below the bottom surface 65 of the ground conductor 6 is used as a ground electrode conductive film set to the ground potential, and a discharge voltage is applied between the power supply 5 receiving the AC voltage from the AC power supply 15 and the ground electrode conductive film, thereby generating an auxiliary discharge space 44.

[0111] As described above, the auxiliary discharge space 44 includes the dielectric through-hole 3h, the cover through-hole 8h, and a portion of the active gas buffer space 68. Thus, the discharge space 4 formed in Embodiment 1 includes the main discharge space within the dielectric space 18 and the auxiliary discharge space 44.

[0112] In the active gas generating device 71 of the first embodiment, the path from the auxiliary discharge space 44 to each of the plurality of gas ejection ports 69 is defined as the active gas flow path.

[0113] In the active gas generating device 71 of embodiment 1, the auxiliary discharge space 44, which is part of the discharge space 4, includes the dielectric through-hole 3h, the cover through-hole 8h, and a portion of the active gas buffer space 68. Therefore, the active gas flow path from the auxiliary discharge space 44 to the plurality of gas ejection ports 69 can be kept to a minimum volume, thereby suppressing the amount of deactivation of the active gas G2.

[0114] Furthermore, the covering dielectric film 8 in the ground side electrode forming portion E2 of the electrode unit 50 covers the inner boundary 7e of the conductive film 7, which serves as the electrode boundary line, within the buffer space 68 for active gas, and overlaps with the plurality of gas ejection ports 69 when viewed from above, thereby suppressing the surface deactivation phenomenon in which the active gas G2 disappears due to the collision between the active gas G2 and the conductive film 7.

[0115] As a result, the active gas generating device 71 of the embodiment 1 can supply high-concentration active gas G2 from the plurality of gas ejection ports 69 to the subsequent processing space.

[0116] The electrode unit 50 of embodiment 1 has the aforementioned structure, whereby the portion facing the discharge space 4 is composed solely of dielectric materials (high-voltage-side dielectric film 2, ground-side dielectric film 3, cover dielectric film 8, and shield dielectric film 9), which are insulators. When metal materials face the discharge, they are easily ionized, causing metal ions to be included in the gas, which can cause contamination.

[0117] (Casing opening 41) As shown in Fig. 2, the housing bottom 1a of the housing 1 has a housing opening 41. The housing opening 41 is provided in a region overlapping with the active gas buffer space 68 in a plan view and penetrates the housing bottom 1a.

[0118] Therefore, the active gas G2 ejected from the plurality of gas ejection ports 69 is guided to the processing space below through the housing opening 41 .

[0119] As shown in FIG. 2 , the housing opening 41 provided at the housing bottom 1 a has an opening area that expands downward and has a tapered shape as shown in FIG. 2 and FIG. 7 . The tapered shape has a lowermost outer peripheral edge 41L.

[0120] In the active gas generating device 71 of the embodiment 1, the housing opening 41 provided in the housing bottom 1 a of the housing 1 has a tapered shape in which the opening area increases downward.

[0121] Therefore, the active gas generating device 71 of embodiment 1 can minimize the loss caused by the active gas G2 ejected from the plurality of gas ejection ports 69 colliding with the housing bottom 1a, and supply high-concentration active gas G2 to the processing space below.

[0122] <Implementation Type 2> (Issues of Implementation Type 1) In the reactive gas generating device 71 of the first embodiment, reactive gas G2 is supplied from the reactive gas buffer space 68 through a plurality of gas ejection ports 69 to the downstream processing space located below. The following description will refer to the reactive gas G2 ejected from the plurality of gas ejection ports 69 as a plurality of partial reactive gases.

[0123] FIG31 is an explanatory diagram schematically illustrating the ejection pattern of the reactive gas G2 from the electrode unit 50 (51 to 53) in the reactive gas generating device 71 of Embodiment 1. FIG32 is an explanatory diagram schematically illustrating an ideal ejection pattern of the reactive gas G2 from the electrode unit 50. FIG31 and FIG32 correspond to, for example, the AA cross section in FIG1. ​​FIG31 and FIG32 are each labeled with an XYZ rectangular coordinate system.

[0124] As shown in FIG. 31 , in the electrode unit 50 ( 51 to 53 ) included in the active gas generating device 71 of embodiment 1, a plurality of gas ejection ports 69 are arranged so as to be spaced further apart from each other as they go downward, thereby preventing collisions between the plurality of portions of active gas.

[0125] However, when the spatial pressure p0 of the active gas buffer space 68 is significantly different from the spatial pressure p1 of the subsequent processing space (for example, {(p1 / p0)<0.5}), as shown in the airflow FGX of Figure 31, the multiple partial active gases ejected from the multiple gas outlets 69 become a single-directional airflow called choked flow, and the multiple partial active gases each move forward in a straight line without diffusing.

[0126] The active gas generating device 71 of embodiment 1 is provided with a plurality of gas ejection ports 69 per electrode unit 50 to uniformly supply the active gas G2 to the subsequent processing space. Furthermore, a plurality of electrode units 51 to 53 are provided as the electrode unit 50 to supply the active gas G2 to a relatively wide processing space.

[0127] However, the plurality of partial active gases ejected from each electrode unit 50 are supplied to the processing space as linear airflows FGX as shown in FIG. 31 , but do not form airflows FGY diffused in multiple directions as shown in FIG. 32 .

[0128] Thus, the reactive gas ejected from each of the plurality of gas ejection ports 69 of the electrode unit 50 has essentially only one directionality. Therefore, the reactive gas generating device 71 of embodiment 1 has the problem of not being able to uniformly supply the reactive gas G2 to the processing space.

[0129] The purpose of the active gas generating device 75 of the second embodiment described below is to supply a uniform active gas G2.

[0130] (Structure of Implementation Type 2) 33 is an explanatory diagram showing a cross-sectional structure of the electrode unit 55 in the active gas generating device 75 according to Embodiment 2. An XYZ rectangular coordinate system is shown in this figure.

[0131] The overall structure of the active gas generating device 75 is the same as that of the active gas generating device 71 shown in Figure 1. Therefore, the electrode unit 55 shown in Figure 33 corresponds to any of the electrode units 51 to 53 in the active gas generating device 75 of the overall structure shown in Figure 1.

[0132] That is, similar to the active gas generating device 71 of embodiment 1, the active gas generating device 75 of embodiment 2 includes electrode units 51 to 53 and a shell 1, wherein the electrode units 51 to 53 serve as a plurality of electrode units, and the shell 1 is conductive and accommodates the electrode units 51 to 53 in the space S1 inside the shell (see Figure 8).

[0133] The electrode unit 55 of the second embodiment is characterized in that the ground conductor 6 of the electrode unit 50 of the first embodiment is replaced with a ground conductor 60 .

[0134] Hereinafter, the same components as those of the electrode unit 50 of the first embodiment are denoted by the same reference numerals, and the description will be centered on the characteristic portions of the electrode unit 55 of the second embodiment.

[0135] As shown in FIG33 , the electrode unit 55 includes a ground conductor 60 serving as a reference potential conductor. This ground conductor 60 is disposed below the ground-side electrode-forming portion E2, which includes the ground-side dielectric film 3, and is housed within the conductor housing space 6S. The ground conductor 60 is formed of a conductive material such as metal.

[0136] The electrode unit 55 of embodiment 2 is housed within the housing interior space S1 of the housing 1, with a ground conductor 60 disposed within the conductor housing space 6S. The source gas G1 supplied from the outside is supplied via the gas flow path 21 provided in the housing bottom 1a to the source gas flow spaces provided on the lower surface and side surfaces of the ground conductor 60 disposed within the conductor housing space 6S.

[0137] (Ground conductor 60) FIG34 and FIG35 are explanatory diagrams schematically showing the structure of the ground conductor 60. FIG34 shows the planar structure of the ground conductor 60, and FIG35 shows the cross-sectional structure of the ground conductor 60. FIG34 and FIG35 are each labeled with an XYZ rectangular coordinate system.

[0138] The ground conductor 60, serving as a reference potential conductor, has a non-through active gas buffer space 68 at its upper portion, and the ground-side electrode component E2, including the ground-side dielectric film 3, is positioned to block the active gas buffer space 68. Therefore, outside the active gas buffer space 68, the lower surface of the conductive film 7 is in contact with the upper surface of the ground conductor 60.

[0139] As in Embodiment 1, the housing 1 is set to the ground potential as a reference potential. Therefore, the conductive film 7 is set to the ground potential via the housing 1 and the ground conductor 60.

[0140] As shown in FIG34 , the ground conductor 60 housed in the conductor housing space 6S of the housing 1 is circular in plan view and has a raw gas buffer space 61 and a micro-slit space 62 at the end region of the bottom surface.

[0141] Similar to the arrangement of the ground conductor 6 in embodiment 1, a flow space for raw gas is provided for the ground conductor 60 , and the flow space for raw gas includes a raw gas buffer space 61 , a plurality of micro-slit spaces 62 and a side space 63 .

[0142] Therefore, the source gas G1 supplied from the outside to the gas flow path 21 is guided to the discharge space 4 via the source gas buffer space 61 , the micro-slit space 62 , and the side space 63 .

[0143] Therefore, similar to the active gas generating device 71 of the first embodiment, the active gas generating device 75 of the second embodiment can supply the raw material gas G1 to the discharge space 4 in a spatially uniform manner.

[0144] As shown in FIG. 34 and FIG. 35 , the active gas buffer space 68 provided on the upper portion of the ground conductor 60 is circular in plan view, and a plurality of gas ejection ports 70 are provided around the bottom surface 65 of the active gas buffer space 68 .

[0145] Similar to the plurality of gas ejection ports 69 in embodiment 1, the plurality of gas ejection ports 70 overlap with the cover dielectric film 8 in a plan view and do not overlap with the dielectric through-hole 3h and the cover through-hole 8h in a plan view.

[0146] 33 to 35 , the plurality of gas ejection ports 70 penetrate the ground conductor 60 and are provided around the bottom surface 65 of the active gas buffer space 68. In other words, the plurality of gas ejection ports 70 are provided around the shielding dielectric film 9 in a plan view.

[0147] When the source gas G1 is supplied to the discharge space 4 where dielectric barrier discharge occurs, it is activated and becomes active gas G2. This gas is then introduced into the active gas buffer space 68 through the dielectric through-hole 3h and the cover through-hole 8h. The active gas G2 entering the active gas buffer space 68 is supplied to the subsequent processing space through a plurality of gas ejection ports 70 provided on the bottom surface of the active gas buffer space 68.

[0148] In the active gas generating device 75 of the second embodiment, the path from the auxiliary discharge space 44 to each of the plurality of gas ejection ports 70 is defined as the active gas flow path.

[0149] In the active gas generating device 75 of embodiment 2, the auxiliary discharge space 44, which is part of the discharge space 4, includes a portion of the dielectric through-hole 3h, the cover through-hole 8h, and the active gas buffer space 68. Therefore, the active gas flow path from the auxiliary discharge space 44 to the plurality of gas ejection ports 70 can be kept to a minimum volume, thereby suppressing the amount of deactivation of the active gas G2.

[0150] Furthermore, the covering dielectric film 8 in the ground side electrode forming portion E2 of the electrode unit 55 covers the inner boundary 7e of the conductive film 7, which serves as the electrode boundary line, within the buffer space 68 for active gas, and overlaps with the plurality of gas ejection ports 70 when viewed from above, thereby suppressing the surface deactivation phenomenon in which the active gas G2 disappears due to the collision between the active gas G2 and the conductive film 7.

[0151] As a result, similar to the first embodiment, the active gas generating device 75 of the second embodiment can supply high-concentration active gas G2 from the plurality of gas ejection ports 70 to the subsequent processing space.

[0152] The housing bottom 1 a of the housing 1 has a housing opening 41 in a region overlapping the active gas buffer space 68 in a plan view, and the active gas G2 ejected from the plurality of gas ejection ports 70 is guided to the processing space below through the housing opening 41 .

[0153] In the active gas generating device 75 of the second embodiment, the housing opening 41 provided in the housing bottom 1 a of the housing 1 has a tapered shape in which the opening area increases downward.

[0154] Therefore, similar to embodiment 1, the active gas generating device 75 of embodiment 2 can suppress the loss caused by the collision of the active gas G2 ejected from the plurality of gas ejection ports 70 with the bottom 1a of the shell, and supply a higher concentration of active gas G2 to the processing space below.

[0155] (Plurality of gas outlets 70) The active gas G2 ejected from the plurality of gas ejection ports 70 provided in the electrode unit 55 of embodiment 2 is supplied to the downstream processing space below. Here, the active gas ejected from the plurality of gas ejection ports 70 is defined as a plurality of partial active gases.

[0156] In the electrode unit 55 of the second embodiment, the plurality of partial reactive gases ejected from the plurality of gas ejection ports 70 are guided downward through the housing opening 41 .

[0157] Figures 36 and 37 are explanatory diagrams schematically illustrating the cross-sectional structure of the plurality of gas ejection ports 70, and Figures 36 and 37 correspond to the cross-sectional structure taken along line DD in Figure 34. XYZ rectangular coordinate systems are shown in Figures 36 and 37.

[0158] As shown in Figures 36 and 37, the housing opening 41 includes an upper region 41a and a lower tapered region 41t. The opening area of ​​the upper region 41a is constant in the height direction (Z direction), while the lower tapered region 41t is a tapered region whose opening area gradually expands downward. Within the housing opening 41, the lower tapered region 41t is located further below the upper region 41a.

[0159] 37, a coordinate position slightly below the center of the boundary between the upper region 41a and the lower tapered region 41t is shown as a collision point P80. The collision point P80 is located within a collision region 80 described later and is the center of the collision region 80.

[0160] In the electrode unit 55 of embodiment 1, the plurality of gas ejection ports 70 are arranged so as to become closer to each other as they go downward, so that the plurality of partially active gases collide at the collision point P80.

[0161] The following describes in detail the structure of the plurality of gas ejection ports 70. Figures 36 and 37 show two gas ejection ports 70, but as shown in Figure 34, the number of the plurality of gas ejection ports 70 is set to "3" or more.

[0162] Hereinafter, among the two gas outlets 70 shown in FIG36 and FIG37 , the gas outlet 70 on the right side (+X direction side) in the drawing is designated as gas outlet 70 (1), and the gas outlet 70 on the left side (-X direction side) in the drawing is designated as gas outlet 70 (2).

[0163] As described above, the plurality of gas ejection ports 70 are discretely arranged in a circular shape when viewed from above. Hereinafter, the virtual line connecting the centers of the plurality of gas ejection ports 70 is referred to as a "virtual gas ejection port circle."

[0164] The gas outlets 70(1) and 70(2) correspond to a pair of gas outlets 70, 70 that face each other in the diametrical direction in the virtual gas outlet circle. Here, the portion of the active gas ejected from the gas outlet 70(1) is designated as the portion of the active gas g2(1), and the portion of the active gas ejected from the gas outlet 70(2) is designated as the portion of the active gas g2(2).

[0165] The gas ejection port 70(1) has a fixed ejection port inclination A71, which is greater than "0" and less than 90 degrees relative to the horizontal direction (X direction) as a reference direction. The ejection port inclination A71 is set so that part of the active gas g2(1) ejected from the gas ejection port 70(1) is directed toward the collision point P80.

[0166] The gas outlet 70(2) has a fixed outlet inclination A72, similar to the gas outlet 70(1), which is greater than "0" and less than 90 degrees relative to the horizontal direction. The outlet inclination A72 is set so that part of the active gas g2(2) ejected from the gas outlet 70(2) is directed toward the collision point P80.

[0167] The ejection port inclinations A71 and A72 are set to the same angle, for example, 45°.

[0168] The remaining film thickness T6 of the ground conductor 60 below the active gas buffer space 68 where the gas ejection ports 70(1) and 70(2) are provided is set to, for example, 3 mm. The spacing R70 between the center positions of the uppermost gas ejection ports 70(1) and 70(2) is set to, for example, 16.4 mm. The spacing R70 is equal to the diameter Φ of the virtual gas ejection port circle.

[0169] On the other hand, the entire depth DTA of the shell opening 41 along the Z direction is set to, for example, 18.5 mm, and the upper depth DT1 of the upper region 41 a of the shell opening 41 along the Z direction is set to, for example, 5.0 mm.

[0170] Furthermore, the side surface of the lower tapered region 41t of the tapered region forming the housing opening 41 expands into a conical shape along a tapered inclination A41. The tapered inclination A41 is set to 45 degrees, for example.

[0171] In the ground conductor 60 having the above-described structure, when the portions of active gas g2(1) and g2(2) are ejected from the gas ejection ports 70(1) and 70(2), the portions of active gas g2(1) and g2(2) collide at the collision point P80. As shown in FIG37 , the depth of the collision point P80 from the surface of the ground conductor 60 is defined as the collision depth DTX.

[0172] Furthermore, even if the total number of gas ejection ports 70 is three or more, each gas ejection port 70 can be arranged along a virtual gas ejection port circle having a diameter of interval R70, and the ejection port inclination A70 can be set to the same value toward the collision point P80. This allows three or more portions of the reactive gas to collide at the same collision point P80. The ejection port inclination A70 is a general term for ejection port inclinations A71 and A72, etc.

[0173] In the above-described setting example of the ejection port inclinations A71 and A72 , the formation interval R70 , the remaining film thickness T6 , and the upper depth DT1 , the collision depth DTX of the collision point P80 is 5.2 mm.

[0174] Considering the diameters of the gas ejection ports 70(1) and 70(2), it can be inferred that a plurality of partially active gases collide in a collision region 80 extending from the collision point P80. Therefore, in the above example, the collision region 80 is formed so as to extend from the upper region of the lower conical region 41t to the lower region of the upper region 41a. In other words, the collision region 80 exists within the lower conical region 41t or within the upper region 41a above the lower conical region 41t.

[0175] (Ejection pattern of active gas G2) Figures 38 to 41 are schematic illustrations showing the ejection pattern of the reactive gas G2 from the housing opening 41 of the electrode unit 55 according to Embodiment 2. Figures 38 to 41 correspond to a portion of the DD cross section of Figure 34 . Figures 38 to 41 are each labeled with an XYZ rectangular coordinate system.

[0176] Hereinafter, the ejection direction of the portion of the active gas g2(1) ejected from the gas ejection port 70(1) is defined as the partial active gas ejection direction V7(1), and the ejection direction of the portion of the active gas g2(2) ejected from the gas ejection port 70(2) is defined as the partial active gas ejection direction V7(2).

[0177] As shown in FIG38 , part of the active gas g2(1) is ejected along the partial active gas ejection direction V7(1) and reaches the collision point P80, and part of the active gas g2(2) is ejected along the partial active gas ejection direction V7(2) and reaches the collision point P80.

[0178] That is, the direction of the airflow of the partial active gas g2(1) is a single direction of the partial active gas ejection direction V7(1), and the direction of the airflow of the partial active gas g2(2) is a single direction of the partial active gas ejection direction V7(2).

[0179] Afterwards, as shown in FIG39 , part of the active gas g2(1) collides with part of the active gas g2(2) in a collision region 80 including a collision point P80, causing part of the active gas g2(1) and g2(2) to diffuse in a plurality of diffusion directions DK.

[0180] That is, the direction of the airflow of the partial active gas g2(1) is dispersed from one partial active gas ejection direction V7(1) into a plurality of diffusion directions DK, and the direction of the airflow of the partial active gas g2(2) is dispersed from one partial active gas ejection direction V7(2) into a plurality of diffusion directions DK. In this way, in the collision region 80, the direction of the airflow of each of the plurality of partial active gases is dispersed from one direction into a plurality of diffusion directions.

[0181] Next, as shown in FIG. 40 , the intermediate supply direction DR1 of the plurality of partial active gases is affected by the side surface of the lower tapered region 41 t and is restricted to be close to the tapered inclination A41 .

[0182] In this way, the collision area 80 exists in the lower conical area 41t and the upper area 41a above the lower conical area 41t, so the multiple parts of the active gases after each diffusion will flow in the direction of the conical shape of the side surface of the lower conical area 41t as they go downward.

[0183] Afterwards, as shown in FIG. 41 , a plurality of partial reactive gas systems are supplied to the subsequent processing space located below along a final supply direction DR2 , which is extended along a tapered inclination A41 .

[0184] (effect) The active gas generating device 75 of the embodiment 2 constructed as described above has the same effects as those of the embodiment 1, and further achieves the effects unique to the embodiment 2 as described below.

[0185] The active gas generating device 75 of embodiment 2 houses the electrode unit 55 having the aforementioned grounding conductor 60 within the housing interior space 1S of the housing 1. In embodiment 2, the plurality of gas ejection ports 70 provided on the grounding conductor 60 of the electrode unit 55 are arranged so as to become increasingly closer to one another as they move downward, so that the plurality of portions of the active gas collide in a collision region 80 including a collision point P80. The collision region 80 is located within or above the lower tapered region 41t.

[0186] Therefore, as shown in FIG. 39 , a plurality of partial active gases collide in the collision region 80 , thereby causing the direction of the airflow of each of the plurality of partial active gases to be dispersed from one direction into a plurality of diffusion directions DK.

[0187] The collision region 80 exists within or above the lower tapered region 41t. Therefore, the diffused portions of reactive gas flow downward, increasingly along the tapered shape of the side surface of the lower tapered region 41t (i.e., the intermediate supply direction DR1 shown in FIG. 40 ).

[0188] Thereafter, the active gas G2 containing a plurality of partial active gases diffuses and flows from the lower conical region 41t toward the processing space below along the direction of the conical shape along the side of the lower conical region 41t (i.e., the final supply direction DR2 shown in FIG. 41 ).

[0189] In this manner, the plurality of partial reactive gases ejected from the plurality of gas ejection ports 70 flow through the housing opening 41 as shown in FIG. 38 to FIG. 41 .

[0190] As a result, even if the spatial pressure p0 of the active gas buffer space 68 differs greatly from the spatial pressure p1 of the subsequent processing space, the active gas generating device 75 of embodiment 1 can supply uniform active gas G2 to the subsequent processing space.

[0191] In embodiment 2, the plurality of gas ejection ports 70 provided in the electrode unit 55 are each formed so as to be inclined downwardly toward the collision region 80 including the collision point P80, and the ejection port inclination A70 of each of the plurality of gas ejection ports 70 is set to the same value, which is the inclination formed relative to the horizontal direction serving as the reference direction.

[0192] Therefore, even if the number of the gas ejection ports 70 is “3” or more, the plurality of partial active gases ejected from the plurality of gas ejection ports 70 can collide within the same collision region 80 .

[0193] As a result, the active gas generating device 75 of the second embodiment disperses a plurality of partial active gases in a collision region 80 in a plurality of diffusion directions, thereby supplying a more uniform active gas G2 to the subsequent processing space.

[0194] Furthermore, as shown in FIG. 1 , the active gas generating device 75 of the second embodiment adopts a structure in which the electrode unit 55 is provided as a plurality of electrode units 51 to 53 .

[0195] Therefore, the active gas generating device 75 of embodiment 2 ejects a plurality of partial active gases from each of a plurality of electrode units 51 to 53, each having the same structure as the electrode unit 55, thereby uniformly supplying the active gas G2 to the relatively wide area of ​​the subsequent processing space.

[0196] <Implementation Type 3> (Basic form) 42 is an explanatory diagram schematically showing a basic aspect of an electrode unit 81 used in the active gas generating device of Embodiment 3. The active gas generating device of Embodiment 3 includes the electrode unit 81, which activates the raw material gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0197] As shown in the figure, the electrode unit 81 includes: a high-voltage side electrode component E11 serving as a first electrode component; and a ground-side electrode component E20 serving as a second electrode component provided below the high-voltage side electrode component E11.

[0198] The high-voltage side electrode forming part E11 as the first electrode forming part includes: a dielectric film F2 as a dielectric film for the first electrode; and a high-voltage electrode F5 as a conductive film for the first electrode provided on the upper surface of the dielectric film F2.

[0199] The ground-side electrode forming portion E20 as the second electrode forming portion includes: a dielectric film F3 as a dielectric film for the second electrode; and a ground electrode F6 as a conductive film for the second electrode provided on the lower surface of the dielectric film F3.

[0200] The electrode unit 81 of Embodiment 3 is characterized by a structure in which the dielectric protective film FC2, serving as a dielectric protective member, is provided on the lower surface of the dielectric film F2 in close contact with the dielectric film F2 without a gap. Specifically, the high-voltage-side electrode component E11 in the electrode unit 81 of Embodiment 3 comprises the dielectric film F2, the high-voltage electrode F5, and the dielectric protective film FC2.

[0201] Dielectric space 18 is formed between dielectric film F2 and dielectric film F3 via dielectric protective film FC2. Specifically, the space where dielectric protective film FC2 and dielectric film F3 face each other constitutes dielectric space 18. Discharge space 4 is the main discharge space within dielectric space 18, encompassing the region where high-voltage electrode F5 and ground electrode F6 overlap when viewed from above.

[0202] Thus, in the electrode unit 81 of the third embodiment, the dielectric film F2 of the dielectric film F2 and the dielectric film F3 is the protected dielectric film, and the dielectric protection film FC2 is provided on the dielectric space 18 side relative to the dielectric film F2 serving as the protected dielectric film.

[0203] The material constituting the dielectric protection film FC2 also has the protective property of blocking ions generated by the dielectric shielding discharge from irradiating the dielectric film F2, which is the dielectric film to be protected, when the dielectric shielding discharge occurs in the discharge space 4, and not chemically reacting with the ions.

[0204] As a material constituting the dielectric protection film FC2, for example, semi-insulating silicon carbide can be considered. Here, semi-insulating means having a dielectric strength of 1×10 5 Ωcm or higher and a dielectric strength of 1 kV / mm or higher.

[0205] The dielectric protection film FC2 has the aforementioned semi-insulating property, and thus contributes to the dielectric shielding discharge generated in the discharge space 4. This also applies to the dielectric protection films FC3 to FC5 in the following embodiments 4 to 8.

[0206] Electrode unit 81 further includes an AC power supply 15 that applies an AC voltage between high-voltage electrode F5 of high-voltage-side electrode configuration section E11 and ground electrode F6 of ground-side electrode configuration section E20. Specifically, the AC voltage is applied to high-voltage electrode F5, while ground electrode F6 is set to a ground potential, which serves as a reference potential.

[0207] The electrode unit 81 of the basic aspect of the third embodiment generates dielectric barrier discharge in the discharge space 4 when a voltage is applied from the AC power source 15 .

[0208] In the basic embodiment of electrode unit 81 shown in FIG42 , the supply pattern of source gas G1 into discharge space 4 and the ejection pattern of reactive gas G2 are not particularly limited. For example, in FIG42 , source gas G1 may be supplied from the left side of the drawing, while reactive gas G2 may be ejected from the right side.

[0209] In the active gas generating device of embodiment 3, which includes electrode unit 81 as a basic aspect, dielectric protection film FC2, a dielectric protection member having the aforementioned protective properties, is located between dielectric space 18 encompassing discharge space 4 and dielectric film F2, the dielectric film to be protected. This suppresses dielectric film reaction, whereby dielectric film F2 reacts with ions when dielectric barrier discharge occurs in discharge space 4.

[0210] As a result, the active gas generating device of the basic aspect of the third embodiment can reliably prevent the elements of the dielectric film F2 from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon, thereby generating a high-purity active gas G2.

[0211] Furthermore, the electrode unit 81 does not need to change the constituent materials of the dielectric film F2 and the dielectric film F3 from the beginning, and can be formed by simply adding the dielectric protection film FC2, so the manufacturing steps of the electrode unit 81 are not complicated.

[0212] In the active gas generating device of the basic aspect of embodiment 3, the dielectric protective film FC2 is provided in close contact with and without a gap on the lower surface of the dielectric film F2, which serves as the dielectric film to be protected. Therefore, no space where discharge phenomena can occur is generated between the dielectric films F2 and F3 outside the discharge space 4, and the active gas G2 can be obtained with high precision.

[0213] The high-voltage-side electrode component E11 of the electrode unit 81 includes a dielectric protective film FC2. The active gas generating device of the basic embodiment 3, including the electrode unit 81, can activate the source gas G1 supplied to the discharge space 4 within the dielectric space 18 by applying an AC voltage as an applied voltage between the high-voltage electrode F5 and the ground electrode F6 from the AC power supply 15, thereby generating the active gas G2.

[0214] (Second aspect) 43 is an explanatory diagram showing the concept of an electrode unit 810 used in the active gas generating device of the second aspect of Embodiment 3. An XYZ rectangular coordinate system is shown in the figure.

[0215] Electrode unit 810 shown in FIG43 is a conceptual structure that applies the basic electrode unit 81 shown in FIG42 to electrode unit 55 of embodiment 2. In electrode unit 810, high-voltage-side dielectric film 2 is used as dielectric film F2, ground-side dielectric film 3 is used as dielectric film F3, and power supply 5 is used as high-voltage electrode F5. Furthermore, conductive film 7 (FIGS. 20 and 21), not shown, is used as ground electrode F6.

[0216] As shown in the figure, in electrode unit 810, which illustrates the concept of the second aspect, a dielectric protective film FC2 is applied in close contact to the lower surface of the high-voltage-side dielectric film 2. The method for forming dielectric protective film FC2 in electrode unit 810 is not limited. Electrode unit 811, described below, represents an actual implementation of electrode unit 810.

[0217] 44 is an explanatory diagram showing a cross-sectional structure of an electrode unit 811 used in the active gas generating device according to the second aspect of Embodiment 3. An XYZ rectangular coordinate system is shown in the figure.

[0218] Electrode unit 811 shown in FIG44 is an actual structure that applies the basic electrode unit 81 shown in FIG42 to electrode unit 55 of embodiment 2. In electrode unit 811, high-voltage-side dielectric film 2 is used as dielectric film F2, ground-side dielectric film 3 is used as dielectric film F3, and power supply 5 is used as high-voltage electrode F5. Furthermore, conductive film 7 (FIGS. 20 and 21), not shown, is used as ground electrode F6.

[0219] In this manner, the active gas generating device of the second aspect of the third embodiment in the actual use structure is an active gas generating device having the electrode unit 811 .

[0220] The overall structure of the second embodiment of the active gas generating device of embodiment 3 is the same as that of the active gas generating device 71 shown in FIG1 . Therefore, the electrode unit 811 shown in FIG44 corresponds to any of the electrode units 51 to 53 in the active gas generating device 75 of the overall structure shown in FIG1 .

[0221] That is, similar to the active gas generating device 71 of embodiment 1, the second embodiment of the active gas generating device of embodiment 3 includes electrode units 51 to 53 and a shell 1, wherein the electrode units 51 to 53 serve as a plurality of electrode units, and the shell 1 is conductive and accommodates the electrode units 51 to 53 in the space S1 inside the shell (refer to Figure 8).

[0222] Hereinafter, the same structures as the electrode unit 50 (51 to 53) of embodiment 1 or the same structures as the electrode unit 55 of embodiment 2 are marked with the same symbols and the description is appropriately omitted, and the description focuses on the characteristic parts of the electrode unit 811.

[0223] As shown in FIG44 , similar to electrode unit 50 ( 51 to 53 ) in Embodiment 1, the lower surface of the high-side dielectric film 2 of electrode unit 811 has a recessed bottom surface 26 and a raised bottom surface 23 disposed around the recessed bottom surface. Raised bottom surface 23 is positioned higher than recessed bottom surface 26 in the height direction along the +Z direction. A dielectric protective film FC2 is disposed on recessed bottom surface 26, but not on raised bottom surface 23.

[0224] The electrode unit 811 includes a dielectric film support member 10B having a support surface 10F forming a dielectric support surface for supporting the bottom surface 23 of the convex portion of the high-voltage side dielectric film 2 from below.

[0225] FIG45 is an explanatory diagram schematically showing the planar structure of the dielectric film support member 10B. The figure shows an XYZ rectangular coordinate system. FIG45 omits the groove 16 and O-ring 17, which will be described later.

[0226] As shown in FIG45 , when viewed from above, the dielectric film support member 10B has a circular shape with a central opening 100 at its center. A stepped structure, consisting of a stepped portion 103, a stepped portion 102, and a peripheral upper surface 101, is annularly arranged around the central opening 100. The upper surface of the stepped portion 103 serves as a fixing auxiliary surface 10XF, while the upper surface of the stepped portion 102 serves as a supporting surface 10F. The stepped portion 102 (supporting surface 10F) is located on the outer periphery of the stepped portion 103 (10XF), and a plurality of through-holes 10h are dispersed and circularly arranged on the peripheral upper surface 101 of the stepped portion 102.

[0227] The fixing auxiliary surface 10XF is provided in an annular shape along the outer circumference of the central opening 100 , and the supporting surface 10F is provided in an annular shape along the outer circumference of the fixing auxiliary surface 10XF.

[0228] 9 and 10 in embodiment 1, the high-side dielectric film 2 includes a circular concave bottom 26 when viewed from above, and a convex bottom 23 whose bottom surface around the concave bottom 26 is annular when viewed from above.

[0229] As shown in FIG. 44 and FIG. 45 , the dielectric film support member 10B further includes a fixing auxiliary surface 10XF serving as a protective member fixing auxiliary surface. The fixing auxiliary surface 10XF is disposed below the peripheral region of the dielectric protective film FC2 provided on the bottom surface 26 of the recess of the high-voltage side dielectric film 2 .

[0230] Like the electrode units 50 and 55 , the electrode unit 811 includes a dielectric film pressing member 11 that presses the high-voltage side dielectric film 2 serving as the first electrode dielectric film from above, and does not overlap with the power supply 5 when viewed from above.

[0231] In the dielectric film support member 10B, an O-ring 17, acting as an elastic member, is inserted between the auxiliary fixing surface 10XF (which serves as the auxiliary fixing surface for the protective member) and the lower surface of the dielectric protective film FC2. The elastic force of the O-ring 17 maintains close contact between the bottom surface 26 of the recess of the high-voltage-side dielectric film 2 and the upper surface of the dielectric protective film FC2. This will be described in detail below.

[0232] In a plan view, the dielectric film support member 10B has an annular groove 16 formed in the auxiliary fixing surface 10XF. Furthermore, in a plan view, an annular O-ring 17 is disposed within the groove 16. Thus, the electrode unit 811 includes the dielectric film support member 10B having the groove 16 and the O-ring 17.

[0233] The O-ring 17 provided in the groove 16 is generally used as a sealing material to seal a fluid such as gas. In the electrode unit 811, the O-ring 17 is used as an elastic member. Specifically, the elastic force generated when the O-ring 17 is deformed is utilized.

[0234] In Figure 44, O-ring 17 is sandwiched between dielectric film support member 10B and high-voltage-side dielectric film 2, causing it to deform due to being sandwiched through dielectric protection film FC2. The upper surface of dielectric protection film FC2 is in close contact with the lower surface of high-voltage-side dielectric film 2 due to the elastic force of O-ring 17, acting as an elastic member.

[0235] Similar to the basic aspect, the electrode unit 811 used in the second aspect of the third embodiment can effectively prevent the elements of the dielectric film F2 from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon, thereby generating a high-purity active gas G2.

[0236] Furthermore, electrode unit 811 does not require changes to the materials used to make the high-side dielectric film 2 and the ground-side dielectric film 3. The main changes compared to electrode unit 55 lie in the upgrade from dielectric film support member 10 to dielectric film support member 10B and the addition of dielectric protective film FC2. Therefore, the manufacturing process of electrode unit 811 is not further complicated.

[0237] For example, consider the case where the electrode unit 55 is constructed without dielectric protective film FC2, and instead uses a material having the aforementioned protective properties as the material for the high-side dielectric film 2. Here, the high-side dielectric film 2 using a material having the aforementioned protective properties is referred to as "high-side dielectric film 2X." High-side dielectric film 2X exhibits a relatively complex structure, including a current-carrying recess 28, a protruding bottom surface 23, and a recessed bottom surface 26. Therefore, if the material having the aforementioned protective properties has poor processability, the processing required to obtain high-side dielectric film 2X becomes more complex.

[0238] On the other hand, the dielectric protective film FC2 in the electrode unit 811 has a relatively simple flat plate structure. The only additional step is to place the dielectric protective film FC2 on the auxiliary fixing surface 10XF of the dielectric film support member 10B via the O-ring 17. Therefore, the manufacturing steps of the electrode unit 811 are not complicated.

[0239] In addition, in the electrode unit 811, the dielectric protection film FC2 is provided on the lower surface of the high-voltage side dielectric film 2 without a through hole, so that the high-voltage side dielectric film 2 can be completely protected by the dielectric protection film FC2 from being affected by the dielectric shielding discharge in the discharge space 4.

[0240] The second aspect of the active gas generating device having the embodiment 3 of the electrode unit 811 described above achieves the same effects as the basic aspect of the active gas generating device having the electrode unit 81, and further achieves the following unique effects.

[0241] In the second aspect of the active gas generating device of Embodiment 3, the dielectric film support member 10B of the electrode unit 811 supports the convex bottom surface 23 of the ground-side dielectric film 3 from below with its support surface 10F serving as the dielectric support surface. Furthermore, the elastic force of the O-ring 17, acting as an elastic member, maintains close contact between the concave bottom surface 26 of the high-voltage-side dielectric film 2 and the upper surface of the dielectric protection film FC2.

[0242] Therefore, the second aspect of the active gas generating device of embodiment 3 utilizes a relatively simple structure of providing the dielectric film support member 10B and the O-ring 17 to stably fix the dielectric protection film FC2 in close contact with the high-voltage side dielectric film 2.

[0243] Furthermore, the second aspect of the active gas generating device of embodiment 3 utilizes the elastic force of the O-ring 17, thereby achieving improved contact accuracy between the recessed bottom surface 26 of the high-side dielectric film 2 and the upper surface of the dielectric protection film FC2 with a relatively simple structure.

[0244] Furthermore, in the second aspect of the active gas generating device of embodiment 3 having the electrode unit 811 shown in Figures 44 and 45 , the plurality of gas ejection ports 70 have the same features as the electrode unit 55 of embodiment 2. Specifically, the plurality of gas ejection ports 70 are arranged so as to become increasingly closer to one another as they move downward, so that the plurality of portions of the active gas collide in a collision region 80, and the collision region 80 is located within or above the lower tapered region 41t (see Figures 36 and 37 ).

[0245] Therefore, similar to the active gas generating apparatus of embodiment 2, the second aspect of the active gas generating apparatus of embodiment 3 can also supply uniform active gas G2 to the subsequent processing space.

[0246] In the third embodiment, the electrode unit 811 using the O-ring 17 is shown as an example of a practical structure for realizing the electrode unit 810. However, the electrode unit 810 may be realized using other structures. For example, the first and second modified examples described below may be considered.

[0247] As a first modification, a structure in which a general spring is used instead of the O-ring 17 to bring the fixing auxiliary surface 10XF of the dielectric film support member 10B into close contact with the dielectric protection film FC2 can be considered.

[0248] As a second variation, a magnetic thin film region made of a magnetic material such as iron is provided at the end of the dielectric protective film FC2. A magnet positioned above the magnetic thin film region of the dielectric protective film FC2 attracts the magnetic thin film region and thereby retains the dielectric protective film FC2. The magnetic thin film region can be formed using a sputtering method or other method. To implement the second variation, a magnet or the like can be provided in the dielectric film pressing member 11 or pressing member 12 of the electrode unit 811 shown in FIG. 44 in a region that overlaps with the auxiliary fixing surface 10XF when viewed from above.

[0249] In addition, although the magnetic film area can be set on either the side facing the discharge space 4 or the side not facing the discharge space 4, it is preferably set at a position where ions and electrons generated during dielectric shielding discharge will not collide.

[0250] <Implementation Type 4> 46 is an explanatory diagram schematically showing a basic aspect of an electrode unit 82 used in the active gas generating device of Embodiment 4. The active gas generating device of Embodiment 4 includes the electrode unit 82, which activates the raw material gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0251] As shown in the figure, the electrode unit 82 includes: a high-voltage side electrode component E10 serving as a first electrode component; and a ground-side electrode component E21 serving as a second electrode component provided below the high-voltage side electrode component E10.

[0252] The high-voltage side electrode forming part E10 as the first electrode forming part includes: a dielectric film F2 as a dielectric film for the first electrode; and a high-voltage electrode F5 as a conductive film for the first electrode provided on the upper surface of the dielectric film F2.

[0253] The ground-side electrode forming portion E21 as the second electrode forming portion includes: a dielectric film F3 as a dielectric film for the second electrode; and a ground electrode F6 as a conductive film for the second electrode provided on the lower surface of the dielectric film F3.

[0254] The electrode unit 82 of embodiment 4 is characterized by a structure in which the dielectric protection film FC3, serving as a dielectric protection member, is provided on the upper surface of the dielectric film F3 in close contact with the dielectric film F3 without a gap. Specifically, the ground-side electrode component E21 in the electrode unit 82 of embodiment 4 comprises the dielectric film F3, the ground electrode F6, and the dielectric protection film FC3.

[0255] Dielectric space 18 is provided between dielectric film F2 and dielectric film F3 via dielectric protective film FC3. Specifically, in electrode unit 82, dielectric protective film FC3 is provided in close contact with the upper surface of dielectric film F3, and the space where dielectric film F2 and dielectric protective film FC3 face each other constitutes dielectric space 18. Within dielectric space 18, discharge space 4 is formed, which is the main discharge space and includes the region where high-voltage electrode F5 and ground electrode F6 overlap when viewed from above.

[0256] Thus, in the electrode unit 82 of the fourth embodiment, the dielectric film F3 of the dielectric film F2 and the dielectric film F3 serves as the protected dielectric film, and the dielectric protection film FC3 is provided on the dielectric space 18 side relative to the dielectric film F3 serving as the protected dielectric film.

[0257] Similar to the dielectric protection film FC2, the material constituting the dielectric protection film FC3 also has the protective property of blocking ions generated by the dielectric shielding discharge from irradiating the dielectric film F3, which is the dielectric film to be protected, when a dielectric shielding discharge occurs in the discharge space 4, and not chemically reacting with the ions.

[0258] The electrode unit 82 further includes an AC power supply 15 that applies an AC voltage between the high-voltage electrode F5 of the high-voltage-side electrode configuration unit E10 and the ground electrode F6 of the ground-side electrode configuration unit E21. Specifically, the AC voltage is applied to the high-voltage electrode F5, while the ground electrode F6 is set to a ground potential, which serves as a reference potential.

[0259] The electrode unit 82 of the basic aspect of the fourth embodiment generates dielectric barrier discharge in the discharge space 4 when a voltage is applied from the AC power source 15 .

[0260] In the basic embodiment of electrode unit 82 shown in FIG46 , the supply pattern of source gas G1 into discharge space 4 and the ejection pattern of reactive gas G2 are not particularly limited. For example, in FIG46 , source gas G1 may be supplied from the left side of the drawing, while reactive gas G2 may be ejected from the right side.

[0261] In the active gas generating device of embodiment 4 having electrode unit 82, dielectric protection film FC3, serving as a dielectric protection member having the aforementioned protective properties, is located between dielectric space 18 encompassing discharge space 4 and dielectric film F3, the dielectric film to be protected. This suppresses dielectric film reaction, in which dielectric film F3 reacts with ions when dielectric barrier discharge occurs in discharge space 4.

[0262] As a result, the active gas generating device of the basic aspect of the fourth embodiment can reliably prevent the elements of the dielectric film F3 from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon, thereby generating a high-purity active gas G2.

[0263] Furthermore, the electrode unit 82 does not require changing the constituent materials of the dielectric films F2 and F3, and can be formed by simply adding the dielectric protection film FC3, so the manufacturing steps of the electrode unit 82 are not complicated.

[0264] In the active gas generating device of the basic aspect of embodiment 4, the dielectric protective film FC3 is provided in close contact with and without a gap on the upper surface of the dielectric film F3, which serves as the dielectric film to be protected. Therefore, no space where discharge phenomena could occur is generated between the dielectric films F2 and F3 outside the discharge space 4, and the active gas G2 can be obtained with high precision.

[0265] The ground-side electrode component E21 of the electrode unit 82 includes a dielectric protective film FC3. The active gas generating device of embodiment 4, including this electrode unit 82, activates the source gas G1 supplied to the discharge space 4 within the dielectric space 18 by applying a voltage between the high-voltage electrode F5 and the ground electrode F6, thereby generating active gas G2.

[0266] Furthermore, the above-mentioned effect can be achieved if the dielectric protection member represented by the dielectric protection film FC3 is provided on the dielectric space 18 side relative to the dielectric film to be protected, which is at least one of the dielectric film F2 and the dielectric film F3.

[0267] Therefore, the electrode unit 82 can be expanded, and the dielectric protection film FC2 can be disposed on the lower surface of the dielectric film F2. Similarly, the electrode unit 81 of embodiment 3 can be expanded, and the dielectric protection film FC3 can be disposed on the upper surface of the dielectric film F3.

[0268] <Implementation Type 5> (Basic form) 47 is an explanatory diagram schematically showing a basic aspect of an electrode unit 83 used in the active gas generating device of Embodiment 5. The active gas generating device of Embodiment 5 includes an electrode unit 83 that activates a raw material gas G1 supplied to the discharge space 4 to generate an active gas G2.

[0269] Hereinafter, the same reference numerals are given to the same structures as those of the electrode unit 81 of the third embodiment, and the description thereof will be omitted as appropriate, with the description focusing on the characteristic parts of the electrode unit 83.

[0270] As shown in the figure, the electrode unit 83 includes: a high-voltage side electrode component E12 serving as a first electrode component; and a ground-side electrode component E20 serving as a second electrode component, which is provided below the high-voltage side electrode component E12.

[0271] The high-voltage side electrode forming part E12 as the first electrode forming part includes: a dielectric film F2 as a dielectric film for the first electrode; and a high-voltage electrode F5 as a conductive film for the first electrode, which is arranged on the upper surface of the dielectric film F2.

[0272] The ground-side electrode forming portion E20 as the second electrode forming portion includes: a dielectric film F3 as a dielectric film for the second electrode; and a ground electrode F6 as a conductive film for the second electrode, which is provided on the lower surface of the dielectric film F3.

[0273] The electrode unit 83 of the fifth embodiment is characterized in that the dielectric protection film FC4 as the dielectric protection member is provided below the dielectric film F2 as the first electrode dielectric film via the protection member space 40 .

[0274] Thus, the high-voltage side electrode component E12 in the electrode unit 83 of embodiment 5 is composed of: a dielectric film F2, a high-voltage electrode F5, and a dielectric protective film FC4; the dielectric protective film FC4 is provided with a protective component space 40 forming a small gap between the dielectric film F2 and the dielectric film to be protected.

[0275] Dielectric space 18 is provided between dielectric film F2 and dielectric film F3 via dielectric protective film FC4. Specifically, the space where dielectric protective film FC4 and dielectric film F3 face each other constitutes dielectric space 18. Within dielectric space 18, discharge space 4 is formed, which includes the main discharge space in the region where high-voltage electrode F5 and ground electrode F6 overlap when viewed from above.

[0276] Thus, in the electrode unit 83 of the fifth embodiment, the dielectric film F2 of the dielectric film F2 and the dielectric film F3 is the protected dielectric film, and the dielectric protection film FC4 is provided on the dielectric space 18 side relative to the dielectric film F2 serving as the protected dielectric film.

[0277] Similar to the dielectric protection film FC2 of embodiment 3 or the dielectric protection film FC3 of embodiment 4, the constituent material of the dielectric protection film FC4 also has the protective property of blocking ions generated by the dielectric shielding discharge from irradiating the dielectric film F2, which serves as the dielectric film to be protected, when a dielectric shielding discharge occurs in the discharge space 4, and does not chemically react with the ions.

[0278] The electrode unit 83 of the basic aspect of the fifth embodiment generates dielectric barrier discharge in the discharge space 4 when a voltage is applied from the AC power source 15 .

[0279] At this time, the applied voltage, the discharge space 4, and the protective member space 40 are set to satisfy discharge generation conditions such that dielectric barrier discharge occurs in the discharge space 4 when the applied voltage is applied, but dielectric barrier discharge does not occur in the protective member space 40. The discharge generation requirements are described below.

[0280] Generally speaking, the voltage required to generate a discharge in a dielectric barrier discharge increases with increasing discharge distance (gap length), provided the pressure and gas type are constant. This property is known as Paschen's law.

[0281] For example, in nitrogen at a pressure of 400 Torr, according to Paschen's law, the discharge inception voltage at a discharge distance of 1 mm is approximately 2900 V, and at a discharge distance of 2.5 mm, it is approximately 6600 V. Meanwhile, the electric field strength required for discharge initiation is 2900 V / mm for the former and 2640 V / mm for the latter, indicating that the electric field strength required for discharge decreases with increasing discharge distance.

[0282] The dielectric shielding discharge employed in the electrode unit 83 is called the parallel plate method, which is characterized in that the electric field strengths applied to the protection member space 40 and the discharge space 4 have the same value. Based on this characteristic, it is possible to shorten the discharge distance (spacing length) of the protection member space 40, thereby deliberately increasing the discharge start electric field strength and selectively setting only the portion where discharge occurs to the discharge space 4.

[0283] Here, the applied voltage VP is the applied voltage applied from the AC power supply 15, the spacing length Δ4 is the spacing length of the discharge space 4, and the spacing length Δ40 is the spacing length of the protection member space 40. Furthermore, the discharge start electric field strength E4 is the electric field strength required to start dielectric shielding discharge in the discharge space 4, the discharge start electric field strength E40 is the electric field strength required to start dielectric shielding discharge in the protection member space 40, and the electric field strength EX is the electric field strength that is the same value common to the discharge space 4 and the protection member space 40.

[0284] At this time, among the electric field strength EX, the discharge start electric field strength E4, and the discharge start electric field strength E40, {EX < E40} and {EX ≧ E40} are the discharge generation requirements. If these discharge generation requirements are satisfied, dielectric shielding discharge will occur in the discharge space 4, and dielectric shielding discharge will not occur in the protection member space 40.

[0285] By setting the spacing length Δ40 to be much shorter than the spacing length Δ4, it is possible to set {EX >> E40}. Therefore, it is relatively easy to set the applied voltage VP, the spacing length Δ4, and the spacing length Δ40 that satisfy the above-mentioned discharge generation requirements ({EX < E40} and {EX ≧ E40}).

[0286] In the electrode unit 83 in the basic form shown in FIG. 47, the form in which the raw material gas G1 is supplied to the discharge space 4 and the ejection form of the active gas G2 are not particularly limited. For example, in FIG. 47, it is also possible to supply the raw material gas G1 from the left side in the drawing and eject the active gas G2 from the right side in the drawing.

[0287] In the active gas generation device of Embodiment 5 having the electrode unit 83 in the basic form, the dielectric protection film FC4, which is a dielectric protection member having the above-mentioned protection characteristics, exists between the dielectric space 18 including the discharge space 4 and the dielectric film F2 that is the dielectric film to be protected. Therefore, it is possible to suppress the dielectric film reaction phenomenon in which the dielectric film F2 reacts with ions when dielectric shielding discharge occurs in the discharge space 4.

[0288] As a result, the active gas generating device of the basic aspect of the fifth embodiment can reliably prevent the elements of the dielectric film F2 from being mixed into the discharge space due to the dielectric film reaction phenomenon, thereby generating a high-purity active gas G2.

[0289] Furthermore, the electrode unit 83 does not require changing the constituent materials of the dielectric films F2 and F3 from the outset, and can be formed by simply adding the dielectric protection film FC4, so the manufacturing steps of the electrode unit 83 are not complicated.

[0290] In the basic form of the active gas generating device of embodiment 5, the dielectric protection film FC4, which serves as the dielectric protection member, has a protection member space 40 between it and the dielectric film F2, which serves as the dielectric film to be protected. Therefore, there is no need to adapt a structure that allows the dielectric protection film FC4 and the dielectric film F2 to be in close contact, and the device structure can be simplified.

[0291] Furthermore, by setting the pitch length Δ40 of the protective member space 40 to be much shorter than the pitch length Δ4 of the discharge space 4, it is possible to more easily set the applied voltage, the discharge space 4, and the protective member space 40 that satisfy the above-mentioned discharge generation requirements.

[0292] As a result, the active gas generating device of embodiment 5 can obtain the active gas G2 with high precision without generating a space where a discharge phenomenon may occur outside the discharge space 4 between the dielectric films F2 and F3.

[0293] The high-voltage-side electrode component E12 of the electrode unit 83 includes a dielectric protective film FC4. The voltage applied between the dielectric films F2 and F3 by the electrode unit 83 satisfies the aforementioned discharge generation requirements. Therefore, the active gas generating device of embodiment 5, including the electrode unit 83, can generate dielectric-shielding discharge in the discharge space 4, including the main discharge space formed between the dielectric protective film FC4 and the dielectric film F3, without generating dielectric-shielding discharge in the protective member space 40 formed between the dielectric film F2 and the dielectric protective film FC4.

[0294] As a result, the active gas generating device of the fifth embodiment can activate the raw material gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0295] (Second aspect) Fig. 48 is an explanatory diagram schematically showing the concept of the electrode unit 830 used in the active gas generating device according to the second aspect of embodiment 5. The figure shows an XYZ rectangular coordinate system.

[0296] Electrode unit 830 shows a characteristic portion of the conceptual structure of electrode unit 83 of the basic aspect shown in FIG. 47 applied to electrode unit 55 of embodiment 2.

[0297] As shown in the figure, in the electrode unit 830 showing the characteristic portion of the concept of the second aspect, the dielectric protection film FC4 is provided on the lower surface side of the high-voltage side dielectric film 2 via a protection member space 40 forming a minute gap.

[0298] The electrode unit 830 includes a dielectric film support member M10 having a support surface 10F serving as a dielectric support surface for supporting the peripheral region of the dielectric film F2 from below, and a support surface 10YF serving as a protective member support surface for supporting the peripheral region of the dielectric protective film FC4 from below.

[0299] The electrode unit 831 described below is an actual structure for realizing the electrode unit 830 shown in FIG. 48 .

[0300] Fig. 49 is an explanatory diagram showing a cross-sectional structure of an electrode unit 831 used in the active gas generating device of the second aspect of embodiment 5. Fig. 50 is an explanatory diagram schematically showing a detailed structure of the focus region R3 of Fig. 49. An XYZ rectangular coordinate system is shown in each of Figs. 49 and 50.

[0301] Electrode unit 831 shown in FIG49 is an actual structure in which the basic electrode unit 83 shown in FIG47 is applied to electrode unit 55 of Embodiment 2. In electrode unit 831, high-voltage-side dielectric film 2 is used as dielectric film F2, ground-side dielectric film 3 is used as dielectric film F3, power supply 5 is used as high-voltage electrode F5, and dielectric film support member 10C is used as dielectric film support member M10. Furthermore, conductive film 7 (FIGS. 20 and 21), not shown, is used as ground electrode F6.

[0302] In this manner, the active gas generating device of the second aspect of embodiment 5 becomes an active gas generating device having the electrode unit 831 .

[0303] The overall configuration of the second aspect of the active gas generating device of embodiment 5 is the same as that of the active gas generating device 71 shown in FIG1 . Therefore, the electrode unit 831 shown in FIG49 corresponds to any of the electrode units 51 to 53 in the active gas generating device 75 of the overall configuration shown in FIG1 .

[0304] That is, similar to the active gas generating device 71 of embodiment 1, the second embodiment of the active gas generating device of embodiment 5 includes electrode units 51 to 53 and a shell 1, wherein the electrode units 51 to 53 serve as a plurality of electrode units, and the shell 1 is conductive and accommodates the electrode units 51 to 53 in the space S1 inside the shell (refer to Figure 8).

[0305] Hereinafter, the same symbols will be given to the same structures as the electrode unit 50 (51 to 53) of embodiment 1, or the same structures as the electrode unit 55 of embodiment 2, and the description will be omitted as appropriate, and the description will focus on the characteristic parts of the electrode unit 831.

[0306] As shown in FIG49 , similar to electrode unit 50 ( 51 to 53 ) in Embodiment 1, the lower surface of the high-side dielectric film 2 of electrode unit 831 has a recessed bottom surface 26 and a raised bottom surface 23 provided around the recessed bottom surface. Raised bottom surface 23 is positioned higher than recessed bottom surface 26 in the height direction along the +Z direction. A dielectric protective film FC4 is provided below recessed bottom surface 26 across protective member space 40 (see FIG50 ), but is not provided on raised bottom surface 23.

[0307] The dielectric protection film FC4 in the electrode unit 831 is formed into a flat plate, and the planar shape of the dielectric protection film FC4 in the XY plane is formed into a circular shape slightly wider than the recess bottom surface 26 shown in FIG. 9 and FIG. 10 .

[0308] 50 omits the conductive film 7. The ground-side dielectric film 3 is provided on the ground conductor 60 via the conductive film 7 (not shown).

[0309] As shown in Figure 50, dielectric protection film FC4 is positioned on the lower surface of high-voltage-side dielectric film 2, separated by a protective member space 40 having a small spacing length Δ40. Furthermore, a discharge space 4 having a spacing length Δ4 is ​​formed between dielectric protection film FC4 and ground-side dielectric film 3. Furthermore, power supply 5 is provided on the upper surface of high-voltage-side dielectric film 2, while ground conductor 60 is provided on the lower surface of ground-side dielectric film 3.

[0310] In the electrode unit 831, the spacing length Δ40 of the discharge distance forming the protective component space 40 is set to be much shorter than the spacing length Δ4 of the discharge distance forming the discharge space 4 to meet the above-mentioned discharge generation requirements.

[0311] The electrode unit 831 includes a dielectric film support member 10C having a support surface 10F forming a dielectric support surface for supporting the bottom surface 23 of the protrusion of the high-voltage side dielectric film 2 from below.

[0312] Fig. 51 is an explanatory diagram schematically showing the planar structure of a dielectric film supporting member 10C, wherein an XYZ rectangular coordinate system is shown.

[0313] As shown in FIG51 , when viewed from above, dielectric film support member 10C has a circular shape with a central opening 100 at its center. A stepped structure, consisting of a stepped portion 104, a stepped portion 102, and a peripheral upper surface 101, is annularly arranged around central opening 100. The upper surface of stepped portion 104 serves as support surface 10YF, while the upper surface of stepped portion 102 serves as support surface 10F. Stepped portion 102 (supporting surface 10F) is located on the outer periphery of stepped portion 104 (10YF), and a plurality of through-holes 10h are dispersed and circularly arranged on peripheral upper surface 101 on the outer periphery of stepped portion 102.

[0314] The support surface 10YF is provided in an annular shape along the outer circumference of the central opening 100 , and the support surface 10F is provided in an annular shape along the outer circumference of the support surface 10YF.

[0315] As shown in FIG. 49 and FIG. 51 , the dielectric film supporting member 10C further includes a supporting surface 10YF serving as a supporting surface for the protective member. The supporting surface 10YF supports the peripheral region of the dielectric protective film FC4 from below.

[0316] Therefore, by supporting the peripheral area of ​​the dielectric protection film FC4 from below with the support surface 10YF, the position of the dielectric protection film FC4 in the height direction along the Z direction can be fixed.

[0317] Furthermore, by setting the inner diameter of the step portion 102 to be slightly wider than the radius of the dielectric protection film FC4 having a circular planar shape, the movement of the dielectric protection film FC4 on the XY plane can be restricted with high precision.

[0318] Like the electrode units 50 and 55 , the electrode unit 831 includes a dielectric film pressing member 11 that presses the high-voltage side dielectric film 2 serving as the first electrode dielectric film from above, and does not overlap with the power supply 5 when viewed from above.

[0319] In the dielectric film support member 10C, the support surface 10F, which serves as the dielectric support surface, is formed at a higher position in the height direction than the support surface 10YF, which serves as the protective member support surface. The height difference value Δd between the support surface 10F and the support surface 10YF is set so as to form a protective member space 40 with a spacing length Δ40 between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0320] For example, if dielectric protective film FC4 has a uniform film thickness dC4, and the depth length of the protrusion 23 extending in the -Z direction from the concave bottom surface 26 is defined as protrusion length t26, the difference value Δd must be set to satisfy {Δd = dC4 + t26 + Δ40}. In this case, the pitch length Δ40 of protective member space 40 must be significantly shorter than the pitch length Δ4 of discharge space 4 to meet the aforementioned discharge generation requirements. Furthermore, the film thickness of dielectric protective films FC2 through FC5, including the aforementioned dielectric protective film FC4, is set to be less than 1 mm.

[0321] Similar to the basic aspect, the electrode unit 831 used in the second aspect of the fifth embodiment can effectively prevent the elements of the dielectric film F2 from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon, thereby generating a high-purity active gas G2.

[0322] Furthermore, electrode unit 831 does not require changes to the materials used to make the high-side dielectric film 2 and the ground-side dielectric film 3. The main changes compared to electrode unit 55 lie in the upgrade from dielectric film support member 10 to dielectric film support member 10C and the addition of dielectric protective film FC4. Therefore, the manufacturing process for electrode unit 831 remains the same as for electrode unit 811, and the manufacturing process is not complicated.

[0323] In addition, in the electrode unit 831, the dielectric protection film FC4 is provided below the high-voltage side dielectric film 2 without a through hole, so that the high-voltage side dielectric film 2 can be completely protected by the dielectric protection film FC4 from the dielectric shielding discharge in the discharge space 4.

[0324] The second aspect of the active gas generating device having the embodiment 5 of the electrode unit 831 described above achieves the same effects as the basic aspect of the active gas generating device having the electrode unit 83, and further achieves the following unique effects.

[0325] In the electrode unit 831 of the active gas generating device of the second embodiment of the fifth embodiment, the dielectric film supporting member 10C supports the peripheral area of ​​the high-voltage side dielectric film 2 from below by means of the supporting surface 10F serving as the dielectric support surface, and further supports the peripheral area of ​​the dielectric protective film FC4 from below by means of the supporting surface 10YF serving as the protective member support surface.

[0326] Furthermore, in the electrode unit 831 , the difference Δd between the support surface 10F and the support surface 10YF is set so that a protective member space 40 having a spacing length Δ40 is formed between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protection film FC4 .

[0327] Therefore, the active gas generating device of the second aspect of the fifth embodiment can stably fix the dielectric protection film FC4 having the protection member space 40 between the dielectric protection film FC4 and the high-voltage side dielectric film 2 .

[0328] Furthermore, the plurality of gas ejection ports 70 of the second embodiment of the active gas generating device of embodiment 5, which includes the electrode unit 831 shown in Figures 49 to 51, have the same features as the electrode unit 55 of embodiment 2. Specifically, the plurality of gas ejection ports 70 are arranged so as to become increasingly closer to one another as they move downward, so that the plurality of portions of the active gas collide in a collision region 80, and the collision region 80 is located within or above the lower tapered region 41t (see Figures 36 and 37).

[0329] As a result, similar to the electrode unit 55 of embodiment 2 and the electrode unit 811 of the second aspect of embodiment 3, the second aspect of the active gas generating device of embodiment 5 can also supply uniform active gas G2 to the subsequent processing space.

[0330] In the fifth embodiment, the electrode unit 831 is shown as an example of a practical structure for realizing the electrode unit 830 , but the electrode unit 830 may be realized by other structures.

[0331] <Implementation Type 6> 52 is an explanatory diagram schematically showing a basic aspect of an electrode unit 84 used in the active gas generating device of Embodiment 6. The active gas generating device of Embodiment 6 includes an electrode unit 84 that activates a raw material gas G1 supplied to the discharge space 4 to generate an active gas G2.

[0332] As shown in the figure, the electrode unit 84 includes: a high-voltage side electrode component E10 serving as a first electrode component; and a ground-side electrode component E22 serving as a second electrode component, which is provided below the high-voltage side electrode component E10.

[0333] The high-voltage-side electrode forming portion E10 as the first electrode forming portion includes a dielectric film F2 as a dielectric film for the first electrode and a high-voltage electrode F5 as a conductive film for the first electrode, which is provided on the upper surface of the dielectric film F2.

[0334] The ground-side electrode forming portion E22 as the second electrode forming portion includes: a dielectric film F3 as a dielectric film for the second electrode; and a ground electrode F6 as a conductive film for the second electrode, which is provided on the lower surface of the dielectric film F3.

[0335] The electrode unit 84 of embodiment 6 is characterized by a structure in which a dielectric protective film FC5, serving as a dielectric protective member, is provided above a dielectric film F3, serving as a second electrode dielectric film, with a protective member space 40 forming a microscopic gap therebetween. Specifically, the ground-side electrode component E22 in the electrode unit 84 of embodiment 6 comprises the dielectric film F3, the ground electrode F6, and the dielectric protective film FC5.

[0336] Dielectric space 18 is provided between dielectric film F2 and dielectric film F3, sandwiching protective member space 40 and dielectric protective film FC5. Specifically, the space where dielectric film F2 and dielectric protective film FC5 face each other constitutes dielectric space 18. Within dielectric space 18, discharge space 4 is formed, encompassing the main discharge space where the high-voltage electrode F5 and ground electrode F6 overlap when viewed from above.

[0337] Thus, in the electrode unit 84 of the sixth embodiment, the dielectric film F3 of the dielectric film F2 and the dielectric film F3 serves as the protected dielectric film, and the dielectric protection film FC5 is provided on the dielectric space 18 side relative to the dielectric film F3 serving as the protected dielectric film.

[0338] Similar to the dielectric protection films FC2 to FC4, the material constituting the dielectric protection film FC5 also has the protective property of blocking ions generated by the dielectric shielding discharge from irradiating the dielectric film F3, which serves as the dielectric film to be protected, when a dielectric shielding discharge occurs in the discharge space 4, and does not chemically react with the ions.

[0339] Electrode unit 84 further includes an AC power supply 15 that applies an AC voltage between high-voltage electrode F5 of high-voltage-side electrode configuration unit E10 and ground electrode F6 of ground-side electrode configuration unit E22. Specifically, the AC voltage is applied to high-voltage electrode F5, while ground electrode F6 is set to a ground potential, which serves as a reference potential.

[0340] The electrode unit 84 of the basic aspect of the sixth embodiment generates dielectric-barrier discharge in the discharge space 4 when a voltage is applied from the AC power source 15 .

[0341] In the basic embodiment of electrode unit 84 shown in FIG52 , the supply pattern of source gas G1 into discharge space 4 and the ejection pattern of reactive gas G2 are not particularly limited. For example, in FIG52 , source gas G1 may be supplied from the left side of the drawing, while reactive gas G2 may be ejected from the right side.

[0342] In the active gas generating device of embodiment 6 having electrode unit 84, dielectric protection film FC5, a dielectric protection member having the aforementioned protective properties, is located between dielectric space 18 encompassing discharge space 4 and dielectric film F3, the dielectric film to be protected. This suppresses dielectric film reaction, whereby dielectric film F3 reacts with ions when dielectric barrier discharge occurs in discharge space 4.

[0343] As a result, the active gas generating device of the basic aspect of the sixth embodiment can reliably prevent the elements of the dielectric film F3 from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon, thereby generating a high-purity active gas G2.

[0344] Furthermore, the electrode unit 84 does not require changing the constituent materials of the dielectric films F2 and F3 from the outset, and can be formed by simply adding the dielectric protection film FC5, so the manufacturing steps of the electrode unit 84 are not complicated.

[0345] In the basic form of the active gas generating device of embodiment 6, the dielectric protection film FC5 serving as the dielectric protection member has a protection member space 40 between it and the dielectric film F3 forming the dielectric film to be protected. Therefore, there is no need to provide a member for closely contacting the dielectric protection film FC5 and the dielectric film F3, thereby simplifying the device structure.

[0346] Furthermore, by setting the spacing length Δ40 of the protective member space 40 to be much shorter than the spacing length Δ4 of the discharge space 4, it is possible to more easily set the applied voltage from the AC power source 15, the discharge space 4, and the protective member space 40 that meet the above-mentioned discharge generation requirements.

[0347] As a result, the active gas generating device of the sixth embodiment can obtain the active gas G2 with high precision without generating a space for generating discharge outside the discharge space 4 between the dielectric films F2 and F3.

[0348] The ground-side electrode component E22 of the electrode unit 84 includes a dielectric protective film FC5. The active gas generating device of embodiment 5, including this electrode unit 84, can apply a voltage between the dielectric films F2 and F3, thereby generating a dielectric barrier discharge in the discharge space 4 without generating a dielectric barrier discharge in the protective member space 40 formed between the dielectric protective film FC5, which serves as the dielectric protective member, and the dielectric film F3.

[0349] As a result, the active gas generating device of the sixth embodiment can activate the raw material gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0350] Furthermore, the above-mentioned effect can be achieved if the dielectric protection member corresponding to the dielectric protection film FC5 is provided on the dielectric space 18 side relative to the dielectric film to be protected, which is at least one of the dielectric film F2 and the dielectric film F3.

[0351] Therefore, the electrode unit 84 can be expanded, and the dielectric protective film FC4 can be provided on the lower surface side of the dielectric film F2 through the protective member space 40. Similarly, the electrode unit 83 of embodiment 5 can be expanded, and the dielectric protective film FC5 can be provided on the upper surface side of the dielectric film F3 through the protective member space 40.

[0352] At this time, two protective member spaces 40 are formed on the lower surface side of dielectric film F2 and the upper surface side of dielectric film F3. The spacing length Δ40 between the two protective member spaces 40 is set to be much shorter than the spacing length Δ4 of discharge space 4 to meet the above-mentioned discharge generation requirements.

[0353] <Implementation Type 7> (Basic form) 53 is an explanatory diagram schematically showing a basic aspect of an electrode unit 91 used in the active gas generating device of Embodiment 7. The active gas generating device of Embodiment 7 includes the electrode unit 91, which activates the raw material gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0354] As shown in the figure, the electrode unit 91 includes: a high-voltage side electrode component E13 serving as a first electrode component; and a ground-side electrode component E20 serving as a second electrode component, which is provided below the high-voltage side electrode component E13.

[0355] The high-voltage side electrode forming part E13 as the first electrode forming part includes: a dielectric film F2 as a dielectric film for the first electrode; and a high-voltage electrode F5 as a conductive film for the first electrode, which is arranged on the upper surface of the dielectric film F2.

[0356] The ground-side electrode forming portion E20 as the second electrode forming portion includes: a dielectric film F3 as a dielectric film for the second electrode; and a ground electrode F6 as a conductive film for the second electrode, which is provided on the lower surface of the dielectric film F3.

[0357] The high-voltage-side electrode component E13 in the electrode unit 91 of embodiment 7 is characterized by further comprising a conductive film F7 as an electrode-reinforcing conductive film and a dielectric protective film FC2 as a dielectric protective member. Furthermore, the film thickness of the dielectric protective film FC2 is set to be less than 1 mm.

[0358] The conductive film F7, which serves as an electrode reinforcement conductive film, is provided in close contact with the lower surface of the dielectric film F2, which serves as the first electrode dielectric film. A metal thin film, for example, can be used as the conductive film F7, and the film thickness of the conductive film F7 is set to, for example, 500 nm or less.

[0359] The dielectric protective film FC2, serving as a dielectric protective member, covers the entire conductor film F7 and is provided on the lower surface of the high-voltage electrode F5. Therefore, the high-voltage-side electrode component E13 has a conductor-film-built-in laminate structure, a laminated structure in which the dielectric film F2, the conductor film F7, and the dielectric protective film FC2 are layered in this order. In this conductor-film-built-in laminate structure, there are no gaps between the dielectric film F2 and the conductor film F7, between the conductor film F7 and the dielectric protective film FC2, or between the dielectric film F2 and the dielectric protective film FC2. The conductor film F7 within the conductor-film-built-in laminate structure is set to an electrically floating state.

[0360] Thus, the high-voltage-side electrode component E13 in the electrode unit 91 of the seventh embodiment includes the dielectric film F2, the high-voltage electrode F5, the conductor film F7, and the dielectric protection film FC2.

[0361] The dielectric space 18 is formed between the dielectric film F2 and the dielectric film F3 via the conductive film F7 and the dielectric protection film FC2. Specifically, the space where the dielectric protection film FC2 and the dielectric film F3 face each other constitutes the dielectric space 18.

[0362] Thus, in the electrode unit 91 of the seventh embodiment, the dielectric film F2 of the dielectric film F2 and the dielectric film F3 is the protected dielectric film, and the dielectric protection film FC2 is provided on the dielectric space 18 side relative to the dielectric film F2 being the protected dielectric film.

[0363] Hereinafter, the same symbols are given to the same structures as those of the electrode unit 81 of the embodiment 3 shown in FIG. 42 and the description thereof is appropriately omitted, and the description will focus on the characteristic parts of the electrode unit 91.

[0364] The dielectric protection film FC2, serving as a dielectric protection member, covers the entire conductor film F7, serving as the electrode-reinforcing conductive film, and is provided on the lower surface of the dielectric film F2, serving as the first electrode dielectric film. As previously described, the high-voltage-side electrode-forming portion E13 has a conductor-film-built-in laminate structure, a laminate structure comprising the dielectric film F2, the conductor film F7, and the dielectric protection film FC. In this conductor-film-built-in laminate structure, no gaps exist between the dielectric film F2, the conductor film F7, and the dielectric protection film FC.

[0365] Furthermore, a space where the dielectric protection film FC2 and the dielectric film F3 face each other becomes a dielectric space 18, and in Embodiment 7, the dielectric film to be protected becomes the dielectric film F2.

[0366] The conductor film F7 is formed to have a planar shape that is wider than the high-voltage electrode F5 in a plan view and narrower than the dielectric film F2 and the dielectric protection film FC2 in a plan view. Furthermore, the ground electrode F6 includes the conductor film F7 in a plan view.

[0367] The dielectric space 18 includes an expanded main discharge space, which is the area where the conductive film F7 and the ground electrode F6 overlap when viewed from above. This creates a relatively wide discharge space 4e. In other words, the main discharge space in the electrode unit 91 of Embodiment 7 is expanded into the expanded main discharge space by the conductive film F7. Here, the expanded main discharge space is the area where the conductive film F7 and the ground electrode F6 overlap when viewed from above within the dielectric space 18.

[0368] The electrode unit 91 further includes an AC power supply 15 that applies an AC voltage between the high-voltage electrode F5 of the high-voltage-side electrode configuration unit E13 and the ground electrode F6 of the ground-side electrode configuration unit E20. Specifically, the AC voltage is applied to the high-voltage electrode F5, while the ground electrode F6 is set to a ground potential, which serves as a reference potential.

[0369] The electrode unit 91 of the basic aspect of the seventh embodiment generates dielectric barrier discharge in the discharge space 4 when a voltage is applied from the AC power source 15 .

[0370] In the basic embodiment of electrode unit 91 shown in FIG53 , the supply pattern of source gas G1 into discharge space 4 and the ejection pattern of reactive gas G2 are not particularly limited. For example, in FIG53 , source gas G1 may be supplied from the left side of the drawing, while reactive gas G2 may be ejected from the right side.

[0371] The active gas generating device of embodiment 7 having the electrode unit 91 as a basic aspect achieves the same effects as the active gas generating device of embodiment 3 having the electrode unit 81, and further achieves the unique effects described below.

[0372] Figures 54 to 56 are explanatory diagrams illustrating the function of the active gas generating device of Embodiment 7. Figure 54 illustrates the discharge space 4 of the electrode unit 81 according to the basic aspect of Embodiment 3, Figure 55 illustrates the discharge space 4e of the electrode unit 91 according to the basic aspect of Embodiment 7, and Figure 56 illustrates the discharge space 4e of the electrode unit 81X, which is an expansion of the electrode unit 81.

[0373] The formation area of ​​the high-voltage electrode F5 is set to be the same between the electrode unit 81 and the electrode unit 91. In addition, the formation area of ​​the conductive film F7 and the formation area of ​​the expanded high-voltage electrode F5e are set to be the same between the electrode unit 91 and the electrode unit 81X.

[0374] The high-voltage-side electrode component E11X in electrode unit 81X shown in Figure 56 comprises an expanded high-voltage electrode F5e, a dielectric film F2, and a dielectric protective film FC2. Furthermore, in each of electrode units 81, 91, and 81X, the ground electrode F6 comprises a high-voltage electrode F5, a conductive film F7, and an expanded high-voltage electrode F5e when viewed from above.

[0375] The discharge space 4e in the electrode unit 91 shown in FIG55 is an expanded main discharge space including a region where the conductive film F7 and the ground electrode F6 overlap in a plan view within the dielectric space 18.

[0376] The active gas generating device of the basic aspect of embodiment 7 employs a conductive film F7, serving as an electrode reinforcement conductive film, interposed between a dielectric protection film FC2, serving as a dielectric protection member, and a dielectric film F2, serving as a first electrode dielectric film. Conductive film F7 has a shape characteristically wider than that of high-voltage electrode F5 when viewed from above.

[0377] For example, if both the high-voltage electrode F5 and the conductive film F7 are circular in plan view, and the diameter of the high-voltage electrode F5 is dA (mm), the diameter of the conductive film F7 is set to (dA + 20 mm). This allows the high-voltage electrode F5 to have a smaller area than the conductive film F7.

[0378] Therefore, the basic aspect of the active gas generating device of embodiment 7 is to obtain a discharge space 4e including an expanded main discharge space having a larger volume corresponding to the formation area of ​​the expanded conductor film F7 than the high-voltage electrode F5.

[0379] As shown in FIG54, the electrode unit 81 forms the discharge space 4 in a manner that includes the main discharge space in the dielectric space 18, which is the region where the high voltage electrode F5 and the ground electrode F6 overlap when viewed from above.

[0380] On the other hand, as shown in FIG. 55 , the electrode unit 91 of embodiment 7 has a larger formation area of ​​the conductor film F7 than the high-voltage electrode F5.

[0381] Conductive film F7, a conductive electrode-reinforcing conductive film, has extremely low internal resistance, maintaining a uniform internal potential. Therefore, conductive film F7 generates an electric field that causes discharge. Consequently, electrode unit 91 forms a relatively wide discharge space 4e within dielectric space 18, encompassing the region where conductive film F7 and ground electrode F6 overlap when viewed from above, extending the main discharge space.

[0382] The thickness of the conductor film F7 is set to 50 nm, for example. The thickness of the conductor film F7 is preferably set so as to form a gap between the dielectric film F2, the conductor film F7, and the dielectric protection film FC2 in the conductor film-in-film build-up structure without hindering the reduction of resistance.

[0383] On the other hand, the electrode unit 81X shown in FIG. 56 is formed by expanding the formation area of ​​the high-voltage electrode F5e, and a discharge space 4e equal to that of the electrode unit 91 is formed without providing the conductor film F7.

[0384] However, since the expanded high-voltage electrode F5e is exposed, the electrode margin distance ΔF5 between the expanded high-voltage electrode F5e and the dielectric film support member M10 is shortened by an amount corresponding to the increased area of ​​the high-voltage electrode F5e. Consequently, the possibility of defects in the electrode unit 81X between the expanded high-voltage electrode F5e and the dielectric film support member M10 increases.

[0385] For example, when the dielectric film support member M10 is a conductor and is set to the grounding level, if the electrode margin distance ΔF5 between the expanded high-voltage electrode F5e and the dielectric film support member M10 is short, there is a risk of short circuiting the dielectric film support member M10 and the expanded high-voltage electrode F5e due to surface discharge.

[0386] On the other hand, the active gas generating device of the basic embodiment of the seventh embodiment has a conductor film F7 provided in the conductor film built-in laminate structure, so the possibility of the conductor film F7 being electrically connected to external components such as the dielectric film support member M10 becomes "0".

[0387] Therefore, the active gas generating device of the basic embodiment of embodiment 7 sets the formation area of ​​the high-voltage electrode F5 to the minimum required and sets the electrode margin distance ΔF5 between the high-voltage electrode F5 and the dielectric film support member M10 to an extremely long distance, thereby fully suppressing the possibility of the above-mentioned defects such as short circuits.

[0388] In this way, the active gas generating device of the basic aspect of embodiment 7 can control the formation area of ​​the high-voltage electrode F5 to the minimum required, and can generate dielectric shielding discharge in the discharge space 4e including the wider (expanded) main discharge space.

[0389] In the active gas generating device of the basic aspect of embodiment 7, no gaps are formed between the dielectric film F2, the conductive film F7, and the dielectric protection film FC2 within the conductor film built-in laminate structure. Therefore, no space where a discharge phenomenon may occur is formed between the dielectric film F2 and the dielectric film F3 outside the discharge space 4e, and the active gas G2 can be obtained with high precision.

[0390] The high-voltage-side electrode component E13 of the electrode unit 91 includes a conductive film F7 and a dielectric protective film FC2. The active gas generating device of the basic aspect of Embodiment 7, including this electrode unit 91, activates the source gas G1 supplied to the discharge space 4e within the dielectric space 18 by applying an AC voltage as an applied voltage between the high-voltage electrode F5 and the ground electrode F6 from the AC power supply 15, thereby generating active gas G2.

[0391] (Second aspect) Fig. 57 is an explanatory diagram showing a cross-sectional structure of an electrode unit 911 used in the second aspect of the active gas generating device of Embodiment 7. Fig. 58 is an explanatory diagram showing details of the focus area R4 of Fig. 57. An XYZ rectangular coordinate system is shown in each of Figs. 57 and 58.

[0392] Electrode unit 911 shown in FIG57 is an actual structure that applies the basic electrode unit 91 shown in FIG53 to electrode unit 55 of Embodiment 2. In electrode unit 911, high-voltage-side dielectric film 2 is used as dielectric film F2, ground-side dielectric film 3 is used as dielectric film F3, power supply 5 is used as high-voltage electrode F5, and conductor film F71 is used as conductor film F7. Furthermore, conductive film 7 (FIGS. 20 and 21), not shown, is used as ground electrode F6.

[0393] In this manner, the active gas generating device of the second aspect of embodiment 7 in the actual use structure is an active gas generating device having the electrode unit 911 .

[0394] The overall configuration of the second aspect of the active gas generating device of embodiment 7 is the same as that of the active gas generating device 71 shown in FIG1 . Therefore, the electrode unit 911 shown in FIG57 corresponds to any of the electrode units 51 to 53 in the active gas generating device 75 of the overall configuration shown in FIG1 .

[0395] That is, similar to the active gas generating device 71 of embodiment 1, the second embodiment of the active gas generating device of embodiment 7 includes electrode units 51 to 53 and a shell 1, wherein the electrode units 51 to 53 serve as a plurality of electrode units, and the shell 1 is conductive and accommodates the electrode units 51 to 53 in the space S1 inside the shell (refer to Figure 8).

[0396] Hereinafter, the same structure as the electrode unit 50 (51 to 53) of embodiment 1, the same structure as the electrode unit 55 of embodiment 2, or the same structure as the electrode unit 831 of embodiment 5 will be marked with the same symbols and the description will be appropriately omitted, and the description will focus on the characteristic parts of the electrode unit 911.

[0397] As shown in FIG57 , similar to electrode unit 50 ( 51 to 53 ) in Embodiment 1, the lower surface of the high-side dielectric film 2 of electrode unit 911 has a concave bottom surface 26 and a convex bottom surface 23 provided around the concave bottom surface. Concave bottom surface 23 is positioned higher than concave bottom surface 26 in the height direction along the +Z direction. Conductive film F7 and dielectric protective film FC2 are provided on concave bottom surface 26, but not on convex bottom surface 23.

[0398] The electrode unit 911 includes a dielectric film support member 10B having a support surface 10F serving as a dielectric support surface for supporting the bottom surface 23 of the protrusion of the high-voltage side dielectric film 2 from below.

[0399] As shown in FIG. 57 , the dielectric film support member 10B further includes a fixing auxiliary surface 10XF serving as a protective member fixing auxiliary surface. The fixing auxiliary surface 10XF is disposed below the peripheral region of the dielectric protective film FC2 provided on the bottom surface 26 of the recess of the high-voltage side dielectric film 2 .

[0400] Like the electrode units 50 and 55 , the electrode unit 911 includes a dielectric film pressing member 11 that presses the high-voltage side dielectric film 2 serving as the first electrode dielectric film from above, and does not overlap with the power supply 5 when viewed from above.

[0401] In the dielectric film support member 10B, an O-ring 17, acting as an elastic member, is inserted between the auxiliary fixing surface 10XF (which serves as the auxiliary fixing surface for the protective member) and the lower surface of the dielectric protective film FC2. Furthermore, the conductive film F71 is not formed in the region overlapping the auxiliary fixing surface 10XF when viewed from above. Therefore, the elastic force of the O-ring 17 maintains close contact between the bottom surface 26 of the recess of the high-voltage-side dielectric film 2 and the upper surface of the dielectric protective film FC2. This point will be described in detail below.

[0402] In Figure 57, O-ring 17 is sandwiched between dielectric film support member 10B and high-voltage-side dielectric film 2, deforming due to being sandwiched through dielectric protection film FC2. The elastic force of O-ring 17, acting as an elastic member, keeps the upper surface of dielectric protection film FC2 in close contact with the lower surface of high-voltage-side dielectric film 2, where conductor film F71 is not formed.

[0403] The electrode unit 911 used in the second aspect of embodiment 7 achieves the same effects as the second aspect of embodiment 3 and the basic aspect of embodiment 7. In addition, the unique effects described below are achieved.

[0404] In addition, the conductor film built-up stacked structure composed of the high-voltage side dielectric film 2 (dielectric film F2), the conductor film F71 (conductor film F7), and the dielectric protection film FC2 is obtained, for example, by the following first and second manufacturing methods.

[0405] The first production method includes steps S11 to S14, and steps S11 to S14 are shown below.

[0406] Step S11: A conductive film F71 is formed on the upper surface of the dielectric protective film FC2, thereby obtaining the dielectric protective film FCE with a conductive film (combined structure of dielectric protective film FC2 and conductive film F71) shown in FIG58. Sputtering or ion plating techniques are used to form the conductive film F7 onto the dielectric protective film FC2.

[0407] Step S12: The dielectric protection film FCE with a conductive film is placed on the auxiliary fixing surface 10XF of the dielectric film support member 10B via the O-ring 17. In the dielectric protection film FCE with a conductive film, the conductive film F7 is not formed above the auxiliary fixing surface 10XF.

[0408] Step S13: Arrange the high-voltage-side dielectric film 2 on the supporting surface 10F of the dielectric film supporting member 10B.

[0409] Step S14: A dielectric film pressing member 11 is provided for pressing the high-voltage side dielectric film 2 from above.

[0410] After executing step S14, the upper surface of the conductor film F71 and the upper surface of the dielectric protection film FC2 (where the conductor film F71 is not provided) are in close contact with the lower surface of the high-voltage side dielectric film 2 due to the elastic force of the O-ring 17 acting as an elastic component.

[0411] Thus, the first method, including steps S11 to S14, can achieve a conductor film built-up laminate structure without creating internal gaps. Furthermore, to accurately form the conductor film F71 in step S11, it is preferable to improve the flatness of the upper surface of the dielectric protective film FC2 by polishing or the like. For example, if the thickness of the conductor film F71 is set to 20 nm, the surface roughness of the upper surface of the dielectric protective film FC2 is preferably set to 20 nm or less.

[0412] The second production method includes steps S21 to S24, and steps S21 to S24 are shown below.

[0413] Step S21: A conductive film F7 is formed on the lower surface of the high-side dielectric film 2, thereby obtaining a dielectric film F2E with a conductive film (a combined structure of the dielectric film F2 and the conductive film F7) as shown in FIG58. Sputtering or ion plating techniques are used to form the conductive film F7 onto the high-side dielectric film 2.

[0414] Step S22: The dielectric protection film FC2 is placed on the auxiliary fixing surface 10XF of the dielectric film support member 10B via the O-ring 17. In the dielectric film with a conductor film F2E, the conductor film F7 is not formed above the auxiliary fixing surface 10XF.

[0415] Step S23: A dielectric film F2E with a conductive film is disposed on the support surface 10F of the dielectric film support member 10B. The conductive film F7 is not formed on the lower surface of the dielectric film F2E with a conductive film disposed on the support surface 10F.

[0416] Step S24: A dielectric film pressing member 11 is provided for pressing the dielectric film F2E with the conductor film from above.

[0417] After executing step S24, the upper surface of the dielectric protection film FC2 is in close contact with the lower surface of the conductor film F7 and the lower surface of the high-voltage side dielectric film 2 (where the conductor film F7 is not provided) by the elastic force of the O-ring 17 acting as an elastic component.

[0418] In this manner, the second method, including steps S21 to S24, can achieve a conductor film built-up laminate structure without creating internal gaps. Furthermore, to accurately form the conductor film F7 in step S21, it is preferable to improve the flatness of the lower surface of the high-side dielectric film 2 by polishing or the like. For example, when the thickness of the conductor film F7 is set to 20 nm, the surface roughness of the lower surface of the high-side dielectric film 2 is preferably set to 20 nm or less.

[0419] Electrode unit 911 does not require changes to the materials used to make the high-side dielectric film 2 and the ground-side dielectric film 3. The main changes compared to electrode unit 55 lie in the upgrade from dielectric film support member 10 to dielectric film support member 10B and the addition of conductor film F7 and dielectric protection film FC2. Therefore, the manufacturing steps for electrode unit 911, including the first or second manufacturing methods described above, are not complicated.

[0420] In the second aspect of the active gas generating device of Embodiment 7, the dielectric film support member 10B of the electrode unit 911 supports the convex bottom surface 23 of the ground-side dielectric film 3 from below via its support surface 10F, which serves as a dielectric support surface. Furthermore, the elastic force of the O-ring 17, acting as an elastic member, maintains close contact between the concave bottom surface 26 of the high-voltage-side dielectric film 2 and the upper surface of the dielectric protection film FC2.

[0421] Therefore, the second aspect of the active gas generating device of embodiment 7 can fix the conductor film built-in laminated structure with good stability by using a relatively simple structure of providing the dielectric film support member 10B and the O-ring 17.

[0422] Furthermore, by controlling the area of ​​the power supply 5 to be the first electrode conductive film to the minimum necessary, a sufficient insulation distance can be ensured between the power supply 5 and the dielectric film pressing member 11.

[0423] Therefore, the second aspect of the active gas generating device of embodiment 7 can obtain a structure that can reliably avoid the possibility of defects occurring between the power supply body 5 and the dielectric film pressing member 11.

[0424] Furthermore, the second aspect of the active gas generating device of embodiment 7 can utilize the elastic force of the O-ring 17, thereby achieving improved close contact accuracy between the bottom surface 26 of the recessed portion of the high-voltage side dielectric film 2 and the upper surface of the dielectric protection film FC2 with a relatively simple structure.

[0425] Furthermore, in the second aspect of the active gas generating device of embodiment 7 having electrode unit 911 shown in FIG57 , the plurality of gas ejection ports 70 have the same features as the electrode unit 55 of embodiment 2 and the electrode unit 811 of the second aspect of embodiment 3. Specifically, the plurality of gas ejection ports 70 are arranged so as to become increasingly closer to one another as they move downward, so that the plurality of portions of active gas collide in a collision region 80, and the collision region 80 is located within or above the lower tapered region 41t (see FIG36 and FIG37 ).

[0426] Therefore, similar to the active gas generating apparatus of embodiment 2 and the second aspect of embodiment 3, the second aspect of the active gas generating apparatus of embodiment 7 can also supply uniform active gas G2 to the subsequent processing space.

[0427] <Implementation Type 8> FIG59 is an explanatory diagram showing the cross-sectional structure of the active gas generating device according to the first and second aspects of Embodiment 8. FIG60 is an explanatory diagram showing the detailed structure of the focus area R5 of FIG59 in the first aspect of Embodiment 8. FIG61 is an explanatory diagram showing the detailed structure of the focus area R5 of FIG59 in the second aspect of Embodiment 8. An XYZ rectangular coordinate system is shown in each of FIG59 and FIG61.

[0428] The electrode unit 931 shown in FIG59 corresponds to the actual usage structure of the electrode unit 831 of embodiment 5 shown in FIG49.

[0429] In addition, the basic aspect of embodiment 8 corresponding to the first aspect is that in the electrode unit 83 shown in Figure 47, a conductor film F7 is provided on the lower surface of the dielectric film F2, and a protective component space 40 is provided between the lower surface of the conductor film F7 and the upper surface of the dielectric protection film FC4.

[0430] In addition, the basic aspect of the embodiment 8 corresponding to the second aspect is that in the electrode unit 83 shown in FIG. 47 , a conductor film F7 is provided on the upper surface of the dielectric protection film FC4, and a protective component space 40 is provided between the upper surface of the conductor film F7 and the lower surface of the dielectric film F2.

[0431] In electrode unit 931, the high-voltage-side dielectric film 2 is used as dielectric film F2, the ground-side dielectric film 3 is used as dielectric film F3, the power supply 5 is used as high-voltage electrode F5, the conductor film F72 (first embodiment) or the conductor film F73 (second embodiment) is used as conductor film F7, and the dielectric film support member 10C is used as the dielectric film support member M10 shown in FIG48. Furthermore, the conductive film 7 (FIGS. 20 and 21), not shown, is used as ground electrode F6. FIG59 also shows the conductor film F72.

[0432] In this manner, the active gas generating apparatus of the first and second aspects of embodiment 8 becomes an active gas generating apparatus having the electrode unit 931 .

[0433] The overall configuration of the first and second aspects of the active gas generating device of embodiment 8 is the same as that of the active gas generating device 71 shown in FIG1 . Therefore, the electrode unit 931 shown in FIG59 corresponds to any of the electrode units 51 to 53 in the overall configuration of the active gas generating device 75 shown in FIG1 .

[0434] That is, similar to the active gas generating device 71 of embodiment 1, the first and second aspects of the active gas generating device of embodiment 8 include electrode units 51 to 53 and a shell 1, wherein the electrode units 51 to 53 serve as a plurality of electrode units, and the shell 1 is conductive and accommodates the electrode units 51 to 53 in the space S1 inside the shell (see Figure 8).

[0435] Hereinafter, the same structure as the electrode unit 50 (51 to 53) of embodiment 1, the same structure as the electrode unit 55 of embodiment 2, or the same structure as the electrode unit 831 of embodiment 5 will be marked with the same symbols and the description will be appropriately omitted, and the description will focus on the characteristic parts of the electrode unit 931.

[0436] As shown in FIG59 , similar to electrode unit 50 ( 51 to 53 ) in Embodiment 1, the lower surface of the high-side dielectric film 2 of electrode unit 931 has a concave bottom surface 26 and a convex bottom surface 23 provided around the concave bottom surface. Concave bottom surface 23 is positioned higher than concave bottom surface 26 in the height direction along the +Z direction.

[0437] In the first state shown in Figure 60, the conductor film F72 is arranged on the lower surface of the recessed bottom surface 26, and the dielectric protection film FC4 is arranged below the conductor film F72 across the protection component space 40, while the conductor film F72 and the dielectric protection film FC4 are not arranged on the protruding bottom surface 23.

[0438] Thus, in the first embodiment shown in FIG. 60 , the dielectric protection film FC4 is disposed on the lower surface side of the high-voltage side dielectric film 2 and the conductor film F72 via a protection member space 40 having a small spacing length Δ40.

[0439] Therefore, the high-voltage side electrode component E14 of the first state of the electrode unit 931 is arranged in the order of the dielectric protection film FC4, the protection component space 40, the conductor film F72, the high-voltage side dielectric film 2 and the power supply 5 along the height direction (+Z direction).

[0440] On the other hand, in the second state shown in Figure 61, the dielectric protective film FCE with a conductor film, which forms a combined structure of a conductor film F73 and a dielectric protective film FC4, is arranged below the bottom surface 26 of the recessed portion through the protective component space 40, while the conductor film F73 and the dielectric protective film FC4 are not arranged on the bottom surface 23 of the protrusion.

[0441] Thus, in the second embodiment shown in FIG. 61 , the dielectric protective film FCE with a conductor film, which forms a combined structure of the conductor film F73 and the dielectric protective film FC4, is arranged on the lower surface side of the high-voltage side dielectric film 2 via a protective member space 40 having a small spacing length Δ40.

[0442] Therefore, the high-voltage side electrode component E15 of the second state of the electrode unit 931 is arranged in the order of the dielectric protection film FC4, the conductor film F73, the protection component space 40, the high-voltage side dielectric film 2 and the power supply 5 along the height direction (+Z direction).

[0443] Hereinafter, when the first embodiment shown in FIG. 60 and the second embodiment shown in FIG. 61 are collectively referred to, they may be referred to as “the actual structure of implementation form 8” or simply as “implementation form 8”.

[0444] In the actual structure of embodiment 8, a discharge space 4e with a spacing length Δ4 is ​​formed between dielectric protection film FC4 and ground-side dielectric film 3. Furthermore, power supply 5 is provided on the upper surface of high-voltage-side dielectric film 2, while ground conductor 60 is provided on the lower surface of ground-side dielectric film 3.

[0445] The active gas generating device of the first aspect of the eighth embodiment shown in FIG. 59 and FIG. 60 has the following features.

[0446] The conductor film F72 serving as an electrode reinforcement conductive film is provided in close contact with the lower surface of the high-voltage side dielectric film 2 serving as a first electrode dielectric film.

[0447] The dielectric protection film FC4, which serves as a dielectric protection member, is provided below the conductive film F72. When viewed from above, the dielectric protection film FC4 encompasses the entire conductive film F72, with a protection member space 40 defined between the dielectric protection film FC4 and the conductive film F72. The portion of the protection member space 40 not containing the conductive film F72 serves as the space between the dielectric protection film FC4 and the high-voltage-side dielectric film 2.

[0448] The space where the dielectric protection film FC4 and the ground-side dielectric film 3 serving as the second electrode dielectric film face each other forms a dielectric space 18 , and the dielectric film to be protected is the high-voltage-side dielectric film 2 .

[0449] The high-voltage-side electrode configuration portion E14 as the first electrode configuration portion is characterized by further including a dielectric protection film FC4 and a conductor film F72 .

[0450] It further includes an AC power supply 15 that applies an applied voltage VP between the power supply 5 of the high-voltage side electrode component E14 and the grounding conductor 6 of the grounding side electrode component E20; when the applied voltage is applied from the AC power supply 15, a dielectric shielding discharge is generated in the discharge space 4e.

[0451] The conductor film F72 has a planar shape that is wider than the power supply body 5 in a plan view and narrower than the high-voltage side dielectric film 2 in a plan view, and the ground conductor 6 includes the conductor film F72 in a plan view.

[0452] The discharge space 4e is an expanded main discharge space included in the dielectric space 18 as a region where the conductive film F72 and the ground conductor 6 overlap in a plan view.

[0453] The applied voltage from the AC power source 15 , the discharge space 4 e , and the protective member space 40 are set to satisfy discharge generation requirements such that dielectric barrier discharge occurs in the discharge space 4 e when the applied voltage is applied, and dielectric barrier discharge does not occur in the protective member space 40 .

[0454] On the other hand, the active gas generating device of the second aspect of embodiment 8 shown in Figures 59 and 61 has the following characteristics.

[0455] The conductor film F73 serving as an electrode reinforcement conductive film is provided on the upper surface of the dielectric protection film FC4 in close contact, and the dielectric protection film FC4 includes the entire conductor film F73 when viewed from above.

[0456] The protective member space 40 is provided between the conductor film F73 and the high-voltage side dielectric film 2. In addition, a portion of the protective member space 40 where the conductor film F73 is not formed becomes the space between the dielectric protection film FC4 and the high-voltage side dielectric film 2.

[0457] Furthermore, a space where the dielectric protection film FC4 and the ground-side dielectric film 3 face each other becomes a dielectric space 18 , and the dielectric film to be protected is the high-voltage-side dielectric film 2 .

[0458] The high-voltage side electrode component E15 is characterized by further including a dielectric protection film FC4 and a conductor film F73.

[0459] It further includes an AC power supply 15 that applies a voltage between the power supply 5 of the high-voltage side electrode component E15 and the grounding conductor 6 of the grounding side electrode component E20; when the voltage is applied from the AC power supply 15, a dielectric shielding discharge is generated in the discharge space 4e.

[0460] The conductor film F73 has a planar shape that is wider than the power supply body 5 when viewed from above and narrower than the high-voltage side dielectric film 2 and the dielectric protection film FC4 when viewed from above, and the grounding conductor 6 includes the conductor film F73 when viewed from above.

[0461] The discharge space 4e is formed in a manner that expands the main discharge space by including a region where the conductor film F73 and the ground conductor 6 overlap in a plan view within the dielectric space 18.

[0462] The applied voltage of the AC power source 15 , the discharge space 4 e and the protective member space 40 are set to satisfy discharge generation requirements that dielectric barrier discharge occurs in the discharge space 4 e when the applied voltage is applied and dielectric barrier discharge does not occur in the protective member space 40 .

[0463] In the eighth embodiment, the electrode unit 931 sets the discharge distance Δ40 forming the protective element space 40 to be significantly shorter than the discharge distance Δ4 forming the discharge space 4e, thereby satisfying the aforementioned discharge generation requirements. This feature is common to both the first and second embodiments.

[0464] As shown in FIG. 59 , the dielectric film supporting member 10C further includes a supporting surface 10YF serving as a supporting surface for the protective member. The supporting surface 10YF supports the peripheral region of the dielectric protective film FC4 from below.

[0465] Therefore, by supporting the peripheral area of ​​the dielectric protection film FC4 from below with the support surface 10YF, the position of the dielectric protection film FC4 in the height direction along the Z direction can be fixed.

[0466] In the second embodiment shown in FIG. 61 , the peripheral region of the dielectric protection film FCE with a conductive film, which is a combined structure of the conductive film F73 and the dielectric protection film FC4, is supported from below by the support surface 10YF.

[0467] In the dielectric film support member 10C, the support surface 10F, which serves as the dielectric support surface, is set to be formed at a higher position in the height direction than the support surface 10YF, which serves as the protective member support surface, and the height difference value Δd between the support surface 10F and the support surface 10YF is set to form a protective member space 40 with a spacing length Δ40 between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0468] For example, if the dielectric protection film FC4 has a uniform film thickness dC4, and the conductive films F72 and F73 both have a uniform film thickness d7, and the depth length of the portion extending from the protrusion bottom 23 in the -Z direction, which forms the recess bottom 26, is defined as the protrusion length t26, then the difference value Δd must be set to satisfy {Δd = dC4 + d7 + t26 + Δ40}. In this case, the gap length Δ40 of the protective element space 40 must be significantly shorter than the gap length Δ4 of the discharge space 4 to meet the aforementioned discharge generation requirements. Furthermore, because the film thickness d7 of the conductive films F72 and F73 is extremely thin, the gap length between the dielectric protection film FC4, which forms part of the protective element space 40, and the high-side dielectric film 2 is approximately the same as the gap length Δ40.

[0469] The first embodiment of the electrode unit 931 shown in Figures 59 and 60 can be obtained, for example, by the following third manufacturing method. The third manufacturing method includes steps S31 to S34 as shown below.

[0470] Step S31: A conductive film F72 is formed on the lower surface of the high-voltage-side dielectric film 2 to obtain a dielectric film F2E with a conductive film as shown in FIG. 60 .

[0471] Step S32: A dielectric protective film FC2 is disposed on the support surface 10YF of the dielectric film support member 10C. The conductive film F7 is not formed on the lower surface of the conductive film-attached dielectric film F2E disposed on the support surface 10F.

[0472] Step S33: A dielectric film F2E with a conductive film is placed on the support surface 10F of the dielectric film support member 10C. The conductive film F72 is not formed on the lower surface of the dielectric film F2E with a conductive film placed on the support surface 10F.

[0473] Step S34: A dielectric film pressing member 11 is provided for pressing the dielectric film F2E with the conductor film from above.

[0474] After executing step S34, a protective component space 40 is formed between the upper surface of the dielectric protection film FC4, the lower surface of the conductor film F72, and the lower surface of the high-voltage side dielectric film 2 (where the conductor film F72 is not provided).

[0475] In this way, by the third manufacturing method including steps S31 to S34, the first state of the electrode unit 931 having the high-voltage side electrode component E14 can be obtained.

[0476] The second aspect of the electrode unit 931 shown in Figures 59 and 61 can be obtained, for example, by the following fourth manufacturing method. The fourth manufacturing method includes steps S41 to S44 as shown below.

[0477] Step S41: A conductive film F73 is formed on the upper surface of the dielectric protective film FC2 to obtain the dielectric protective film FCE with a conductive film as shown in FIG. 61 .

[0478] Step S42: The dielectric protection film FCE with a conductive film is placed on the support surface 10YF of the dielectric film support member 10C. In the dielectric protection film FCE with a conductive film, the conductive film F7 is not formed above the support surface 10YF.

[0479] Step S43: Arrange the high-voltage-side dielectric film 2 on the supporting surface 10F of the dielectric film supporting member 10C.

[0480] Step S44: A dielectric film pressing member 11 is provided for pressing the high-voltage side dielectric film 2 from above.

[0481] After executing step S44, a protective component space 40 is formed between the upper surface of the conductor film F73 of the dielectric protection film FCE with a conductor film, the upper surface of the dielectric protection film FC2 (without the conductor film F73), and the high-voltage side dielectric film 2.

[0482] The active gas generating device having the electrode unit 931 of the actual structure belonging to the embodiment 8 achieves the same effect as the active gas generating device of the embodiment 5 shown in Figures 47 to 51, and further achieves the unique effects described below.

[0483] The active gas generating device of embodiment 8 comprises a conductive film F72 or F73, serving as an electrode reinforcement conductive film, disposed between a dielectric protective film FC4, serving as a dielectric protection member, and a high-voltage-side dielectric film 2 (dielectric film F2), serving as a first-electrode dielectric film. The conductive film F72 or F73 has a wider shape than the power supply 5 (high-voltage electrode F5), serving as the first-electrode conductive film, when viewed from above.

[0484] Therefore, the active gas generating device of embodiment 8 can obtain the discharge space 4e including the expanded main discharge space having a larger volume corresponding to the formation area of ​​the conductor film F72 or the conductor film F73 than the power supply body 5.

[0485] Therefore, in the active gas generating device of the eighth embodiment, the formation area of ​​the power supply body 5 can be controlled to the necessary minimum, and dielectric shielding discharge can be generated in the wide discharge space 4e including the expanded main discharge space.

[0486] In the first embodiment of the active gas generating device of embodiment 8, the dielectric protection film FC4 serving as the dielectric protection member has a protection member space 40 between it and the conductor film F72 serving as the electrode reinforcement conductive film. Therefore, there is no need to provide a member for closely contacting the dielectric protection film FC4 and the conductor film F72 or the high-voltage side dielectric film 2, thereby simplifying the device structure.

[0487] On the other hand, in the second embodiment of the active gas generating device of embodiment 8, a protective component space 40 is provided between the conductor film F73 and the high-voltage side dielectric film 2, thereby eliminating the need for components that bring the dielectric protective film FC4 and the high-voltage side dielectric film 2 into close contact, thereby simplifying the device structure.

[0488] Furthermore, in the active gas generating device of embodiment 8, the spacing length Δ40 of the protective member space 40 can be set to be much shorter than the spacing length Δ4 of the discharge space 4e, thereby making it easier to set the applied voltage, discharge space 4, and protective member space 40 that satisfy the above-mentioned discharge generation requirements.

[0489] As a result, the active gas generating device of embodiment 8 can obtain active gas G2 with good accuracy without generating a space for discharge outside the discharge space 4e between the dielectric film 2 (F2) and the dielectric film 3 (F3).

[0490] The high-voltage side electrode component E14 of the first embodiment of the electrode unit 931 includes a dielectric protection film FC4. In the electrode unit 931, the voltage applied between the dielectric films F2 and F3 satisfies the above-mentioned discharge generation requirements.

[0491] Therefore, the first state of the active gas generating device of embodiment 8 having the electrode unit 931 is that a dielectric shielding discharge can be generated in the wider discharge space 4e between the dielectric protective film FC4 and the dielectric film 3 (F3) that includes an expanded main discharge space, without generating a dielectric shielding discharge in the protective component space 40 formed between the dielectric protective film FC4 and the conductor film F72.

[0492] On the other hand, the high-voltage side electrode component E15 of the second embodiment of the electrode unit 931 includes a dielectric protection film FC4, and the voltage applied between the dielectric films F2 and F3 in the electrode unit 931 satisfies the above-mentioned discharge generation requirements.

[0493] Therefore, the second embodiment of the active gas generating device of embodiment 8 is to generate dielectric shielding discharge in the wider discharge space 4e between the dielectric protection film FC4 and the dielectric film 3 (F3) that includes an expanded main discharge space, without generating dielectric shielding discharge in the protective component space 40 formed between the high-voltage side dielectric film 2 and the conductor film F73.

[0494] As a result, the active gas generating device of the eighth embodiment activates the raw material gas G1 supplied to the relatively wide discharge space 4e to generate the active gas G2.

[0495] Furthermore, in the electrode unit 931 of the active gas generating device of embodiment 8, the dielectric film supporting member 10C supports the peripheral area of ​​the high-voltage side dielectric film 2 from below by means of the supporting surface 10F serving as the dielectric support surface, and further supports the peripheral area of ​​the dielectric protective film FC4 from below by means of the supporting surface 10YF serving as the protective member support surface.

[0496] Furthermore, in the electrode unit 931 , the difference Δd between the support surface 10F and the support surface 10YF is set so that a protective member space 40 with a spacing length Δ40 is formed partially between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protection film FC4 .

[0497] Therefore, the active gas generating device of embodiment 8 can fix the dielectric protection film FC4 having a protective component space 40 between it and the high-voltage side dielectric film 2 or the dielectric protection film FCE with a conductor film (a combined structure of the conductor film F73 and the dielectric protection film FC4) with good stability.

[0498] Furthermore, the plurality of gas ejection ports 70 in the active gas generating device of embodiment 8, which includes the electrode unit 931 shown in Figures 59 to 61, have the same features as the electrode unit 55 of embodiment 2 or the electrode unit 831 of embodiment 5. Specifically, the plurality of gas ejection ports 70 are arranged so as to become increasingly closer to one another as they move downward, so that the plurality of portions of active gas collide in a collision region 80, and the collision region 80 is located within or above the lower tapered region 41t (see Figures 36 and 37).

[0499] As a result, similar to the electrode unit 55 of embodiment 2 and the electrode unit 831 of embodiment 5, the active gas generating device of embodiment 8 can also supply uniform active gas G2 to the subsequent processing space.

[0500] <Other> While the present invention has been described in detail above, the above description is merely illustrative of all possible embodiments and is not intended to be limiting. It should be understood that numerous variations not shown in the examples above are contemplated without departing from the scope of the present invention.

[0501] For example, in embodiment 2, a plurality of portions of the active gases are caused to collide in one collision region 80 , but a plurality of portions of the active gases may also be caused to collide selectively in two or more collision regions.

[0502] In addition, regarding Embodiments 3 to 6, the following active gas generating device having first and second improved electrode units can be considered.

[0503] The first improved electrode unit has a structure including the dielectric protection film FC2 of the third embodiment and the dielectric protection film FC5 of the sixth embodiment as a combined structure of the electrode unit 81 and the electrode unit 84 .

[0504] The second improved electrode unit has a structure including the dielectric protection film FC3 of the fourth embodiment and the dielectric protection film FC4 of the fifth embodiment as a combined structure of the electrode unit 82 and the electrode unit 83 .

[0505] That is, the present invention can freely combine various embodiments within the scope of the invention, and can appropriately modify or omit various embodiments.

[0506] 1: Shell 1a: Shell bottom 1b: Shell side 1c: Upper part of the shell 1F: Flat surface 2,2X: High voltage side dielectric film 3: Ground side dielectric film 3h: dielectric through-hole 4,4e: discharge space 5: Power supply 6,60: Grounding conductor 6S: Conductor accommodation space 7: Conductive film 7e: inner boundary of the conductive film 7h: conductive film opening 8: Covering dielectric film 8h: Covering the through-hole 9: Shielding dielectric film 10, 10B, 10C, M10: Dielectric film support member 10F, 10YF: Support surface 10h:Through port 10XF: Fixed auxiliary surface 11: Dielectric film pressed component 12: Pressing member 15: AC power supply 16: Groove 17: O-ring 18: Dielectric space 20: Gap 21: Gas flow path 23: Bottom surface of convex part 26: Bottom surface of concave part 27: Peripheral surface area 28: Recess for arranging the power supply 31: Mounting bolts 32: Pressing auxiliary components 40: Protect component space 41: Shell opening 41a: Upper area 41L: bottom outer edge 41t: Lower tapered area 44: Auxiliary discharge space 50,51,52,53,55,81,81X,82,83,84,91,810,811,830,831,911,931: electrode units 61: Raw gas buffer space 62: Micro-slit space 63: Side Space 65: Bottom 68: Buffer space for active gas 69,70,70(1),70(2): Gas outlet 71,75: Active gas generating device 80: Collision Zone 100, 110, 120: Central opening 101: Upper surface of peripheral portion 102,103,104: Step difference department 111: Dielectric non-contact area 112: Dielectric contact area 121h: inner through-hole 122h: outer through-hole 125:Peripheral area A41: Conical inclination A71, A72: nozzle inclination A7: Formation Area d7,dC4: film thickness DK: Diffusion direction DR1: Intermediate supply direction DR2: Final supply direction DT1: Depth above DTA: Overall Depth DTX: Depth of Impact E1, E10, E11, E12, E13, E14, E15, E11X: High voltage side electrode component E2, E20, E21, E22: Ground side electrode component E4, E40: Electric field strength at the start of discharge EX: Electric field strength EX2: Exposed area F2, F3: Dielectric film F2E: Dielectric film with conductor film (dielectric film) F5: High voltage electrode F6: Grounding Electrode F5e: Expanded high voltage electrode F7, F71, F72, F73: Conductive film FC,FC2,FC3,FC4,FC5: Dielectric protective film FCE: Dielectric protective film with conductor film (dielectric protective film) FGX, FGY: Airflow G1: Raw gas G2: Active gas p0, p1: space pressure P80: Impact point R1, R2, R3, R4, R5: Focus area R10: Lower side area R70: Forming a gap S1: Space inside the shell SP11: Gap t26: protrusion length T6: Residual film thickness U2: upper surface V7: Part of the active gas ejection direction VP: Applied voltage △4,△40: spacing length △F5: Electrode margin distance △d: difference value g2(1), g2(2): some active gases V7(1), V7(2): Part of the active gas ejection direction

Claims

1. An active gas generating apparatus comprising an electrode unit, wherein the electrode unit activates a raw material gas supplied to a discharge space to generate an active gas; the electrode unit comprises: a first electrode forming portion; and a second electrode forming portion disposed below the first electrode forming portion; the first electrode forming portion comprising: a first electrode dielectric film and a first electrode conductive film, the first electrode conductive film being disposed on the upper surface of the first electrode dielectric film; the second electrode forming portion comprising a second electrode dielectric film and a second electrode conductive film, the second electrode conductive film being disposed on the lower surface of the second electrode dielectric film; a dielectric space is provided between the first electrode dielectric film and the second electrode dielectric film; the discharge space comprises a main discharge space, the main discharge space being the area within the dielectric space where the first and second electrode conductive films overlap when viewed from above; the electrode unit further comprises: The dielectric protection member is disposed on the dielectric space side relative to the dielectric film to be protected, which is at least one of the dielectric film for the first electrode and the dielectric film for the second electrode; and the electrode reinforcing conductive film is disposed between the dielectric protection member and the dielectric film to be protected; and the electrode reinforcing conductive film is not present inside the dielectric protection member; the constituent material of the dielectric protection member has the protective property of blocking the irradiation of the dielectric film to be protected by the ions generated by the dielectric shielding discharge when a dielectric shielding discharge occurs in the discharge space, and not reacting chemically with the ions.

2. The active gas generating apparatus as described in claim 1, wherein, The aforementioned electrode reinforcing conductive film is disposed on the lower surface of the aforementioned first electrode dielectric film; the aforementioned dielectric protection member covers the entirety of the aforementioned electrode reinforcing conductive film and is disposed on the lower surface of the aforementioned first electrode dielectric film, and is arranged in a laminated structure without gaps in the order of the aforementioned first electrode dielectric film, the aforementioned electrode reinforcing conductive film, and the aforementioned dielectric protection member; the space between the aforementioned dielectric protection member and the aforementioned second electrode dielectric film facing each other forms the aforementioned dielectric space; the aforementioned protected dielectric film is the aforementioned first electrode dielectric film; the aforementioned first electrode component further includes the aforementioned dielectric protection member and the aforementioned electrode reinforcing conductive film; the aforementioned active gas generating device further includes a power source, the aforementioned power source applies an applied voltage between the aforementioned first electrode conductive film of the aforementioned first electrode component and the aforementioned second electrode conductive film of the aforementioned second electrode component; when the aforementioned applied voltage is applied, the aforementioned dielectric shielding discharge is generated in the aforementioned discharge space; The aforementioned electrode reinforcing conductive film has a planar shape that is wider than the aforementioned first electrode conductive film when viewed from above, and narrower than the aforementioned first electrode dielectric film when viewed from above. The aforementioned second electrode conductive film overlaps with the aforementioned electrode reinforcing conductive film when viewed from above and is wider than the aforementioned electrode reinforcing conductive film. The aforementioned discharge space is the enlarged main discharge space included in the aforementioned dielectric space, which overlaps with the aforementioned electrode reinforcing conductive film and the aforementioned second electrode conductive film when viewed from above.

3. The active gas generating apparatus as described in claim 2, wherein, The lower surface of the aforementioned dielectric film for the first electrode has a concave bottom surface and a convex bottom surface disposed around the periphery of the aforementioned concave bottom surface. The convex bottom surface is formed at a higher position in the height direction than the aforementioned concave bottom surface. The aforementioned electrode reinforcing conductive film and the aforementioned dielectric protective member are disposed on the aforementioned concave bottom surface, while the aforementioned electrode reinforcing conductive film and the aforementioned dielectric protective member are not disposed on the aforementioned convex bottom surface. The aforementioned electrode unit further includes: a dielectric film support member having a dielectric support surface that supports the aforementioned convex bottom surface of the aforementioned dielectric film for the first electrode from below; and a dielectric film pressing member that presses the aforementioned dielectric film for the first electrode from above. The aforementioned dielectric film pressing member does not overlap with the aforementioned conductive film for the first electrode when viewed from above. The aforementioned dielectric film support member further has a protective member fixing auxiliary surface, which is disposed below the aforementioned dielectric protective member disposed on the aforementioned concave bottom surface. When viewed from above, the aforementioned electrode reinforcing conductive film is not formed in the area overlapping with the aforementioned protective member fixing auxiliary surface; the aforementioned electrode unit further includes an elastic member inserted between the aforementioned protective member fixing auxiliary surface and the lower surface of the aforementioned dielectric protective member, and the elastic force of the aforementioned elastic member makes the aforementioned recessed bottom surface of the aforementioned first electrode dielectric film and the upper surface of the aforementioned dielectric protective member in close contact.

4. The active gas generating apparatus as described in claim 3, wherein, The aforementioned concave bottom surface is formed to be circular when viewed from above; the aforementioned convex bottom surface is formed in a ring shape around the periphery of the aforementioned concave bottom surface when viewed from above; the aforementioned protective member fixing auxiliary surface of the aforementioned dielectric film support member is formed in a ring shape when viewed from above; the aforementioned dielectric film support member includes: a groove, which is provided in a ring shape within the aforementioned protective member fixing auxiliary surface when viewed from above; and an O-ring in a ring shape when viewed from above, which is provided within the aforementioned groove; the aforementioned elastic member is the aforementioned O-ring.

5. The active gas generating apparatus as described in claim 1, wherein, The aforementioned electrode reinforcing conductive film is disposed on the lower surface of the aforementioned first electrode dielectric film in close contact; the aforementioned dielectric protection member is disposed below the aforementioned electrode reinforcing conductive film, and the aforementioned dielectric protection member overlaps with the aforementioned electrode reinforcing conductive film when viewed from above and is wider than the entirety of the aforementioned electrode reinforcing conductive film, and a protective member space is provided between the aforementioned dielectric protection member and the aforementioned electrode reinforcing conductive film; the space between the aforementioned dielectric protection member and the aforementioned second electrode dielectric film facing each other forms the aforementioned dielectric space; the aforementioned protected dielectric film is the aforementioned first electrode dielectric film; the aforementioned first electrode constitutive portion further includes the aforementioned dielectric protection member and the aforementioned electrode reinforcing conductive film; the aforementioned active gas generating device further includes a power source, and the aforementioned power source applies an applied voltage between the aforementioned first electrode conductive film of the aforementioned first electrode constitutive portion and the aforementioned second electrode conductive film of the aforementioned second electrode constitutive portion; when the aforementioned applied voltage is applied, the aforementioned dielectric shielding discharge is generated in the aforementioned discharge space; The aforementioned electrode reinforcing conductive film has a planar shape that is wider than the aforementioned first electrode conductive film and narrower than the aforementioned first electrode dielectric film when viewed from above. The aforementioned second electrode conductive film overlaps with the aforementioned electrode reinforcing conductive film when viewed from above and is wider than the aforementioned electrode reinforcing conductive film. The aforementioned discharge space includes an expanded main discharge space, which is the area within the aforementioned dielectric space where the aforementioned electrode reinforcing conductive film and the aforementioned second electrode conductive film overlap when viewed from above. The aforementioned applied voltage, the aforementioned discharge space, and the aforementioned protective member space are configured to satisfy the discharge generation condition that, when the aforementioned applied voltage is applied, the aforementioned dielectric shielding discharge is generated in the aforementioned discharge space, and the aforementioned dielectric shielding discharge is not generated in the aforementioned protective member space.

6. The active gas generating apparatus as described in claim 1, wherein, The aforementioned electrode reinforcing conductive film is disposed on the upper surface of the aforementioned dielectric protective member in close contact; the aforementioned dielectric protective member overlaps with the aforementioned electrode reinforcing conductive film when viewed from above and is wider than the entirety of the aforementioned electrode reinforcing conductive film; a protective member space is provided between the aforementioned electrode reinforcing conductive film and the aforementioned dielectric film for the first electrode; the space between the aforementioned dielectric protective member and the aforementioned dielectric film for the second electrode forms the aforementioned dielectric space; the aforementioned protected dielectric film is the aforementioned dielectric film for the first electrode; the aforementioned first electrode component further includes the aforementioned dielectric protective member and the aforementioned electrode reinforcing conductive film; the aforementioned active gas generating device further includes a power source, which applies an applied voltage between the aforementioned first electrode conductive film of the aforementioned first electrode component and the aforementioned second electrode conductive film of the aforementioned second electrode component; when the aforementioned applied voltage is applied, the aforementioned dielectric shielding discharge is generated in the aforementioned discharge space; The aforementioned electrode reinforcing conductive film has a planar shape that is wider than the aforementioned first electrode conductive film and narrower than the aforementioned first electrode dielectric film when viewed from above. The aforementioned second electrode conductive film overlaps with the aforementioned electrode reinforcing conductive film when viewed from above and is wider than the aforementioned electrode reinforcing conductive film. The aforementioned discharge space includes an expanded main discharge space, which is the area within the aforementioned dielectric space where the aforementioned electrode reinforcing conductive film and the aforementioned second electrode conductive film overlap when viewed from above. The aforementioned applied voltage, the aforementioned discharge space, and the aforementioned protective member space are configured to satisfy the discharge generation condition that, when the aforementioned applied voltage is applied, the aforementioned dielectric shielding discharge is generated in the aforementioned discharge space, and the aforementioned dielectric shielding discharge is not generated in the aforementioned protective member space.

7. The active gas generating apparatus as described in claim 5 or 6, wherein, The lower surface of the aforementioned dielectric film for the first electrode has a concave bottom surface and a convex bottom surface disposed around the periphery of the concave bottom surface. The convex bottom surface is positioned higher than the concave bottom surface in the height direction. When viewed from above, the concave bottom surface overlaps with the aforementioned dielectric protection member and the aforementioned electrode reinforcing conductive film. When viewed from above, the convex bottom surface does not overlap with the aforementioned dielectric protection member and the aforementioned electrode reinforcing conductive film. The aforementioned electrode unit further comprises: a dielectric film support member having a dielectric support surface that supports the aforementioned convex bottom surface of the dielectric film for the first electrode from below; and a dielectric film pressing member that presses the aforementioned dielectric film for the first electrode from above. The aforementioned dielectric film pressing member does not overlap with the aforementioned conductive film for the first electrode when viewed from above. The aforementioned dielectric film support member further has a protective member support surface that supports the aforementioned dielectric protection member from below. The aforementioned dielectric support surface is formed at a higher position in the height direction than the aforementioned protective member support surface. The height difference between the aforementioned dielectric support surface and the aforementioned protective member support surface is set such that a protective member space is formed in a portion between the lower surface of the aforementioned first electrode dielectric film and the upper surface of the aforementioned dielectric protective member.

8. An active gas generating apparatus comprising an electrode unit, wherein the electrode unit activates a raw material gas supplied to a discharge space to generate an active gas; the electrode unit comprises: a first electrode forming portion; and a second electrode forming portion disposed below the first electrode forming portion; the first electrode forming portion comprising: a first electrode dielectric film and a first electrode conductive film, the first electrode conductive film being disposed on the upper surface of the first electrode dielectric film; the second electrode forming portion comprising a second electrode dielectric film and a second electrode conductive film, the second electrode conductive film being disposed on the lower surface of the second electrode dielectric film; a dielectric space is provided between the first electrode dielectric film and the second electrode dielectric film; the discharge space comprises a main discharge space, the main discharge space being the area within the dielectric space where the first and second electrode conductive films overlap when viewed from above; the electrode unit further comprises: A dielectric protection member is disposed on the dielectric space side relative to the dielectric film to be protected, which is at least one of the dielectric films for the first electrode and the second electrode. The material constituting the dielectric protection member has the protective property of blocking the irradiation of the dielectric film to be protected by ions generated by the dielectric shielding discharge during the discharge space, and not reacting chemically with the ions. The active gas generating device further includes a power source that applies an applied voltage between the conductive film for the first electrode of the first electrode component and the conductive film for the second electrode of the second electrode component. The dielectric protection member is disposed such that a protective member space exists between it and the dielectric film to be protected. The applied voltage, the discharge space, and the protective member space are configured to satisfy the discharge generation condition that, when the applied voltage is applied, the dielectric shielding discharge occurs in the discharge space, but no dielectric shielding discharge occurs in the protective member space. The aforementioned dielectric protection member has a protective member space between itself and the lower surface of the aforementioned dielectric film for the first electrode, and the space between the aforementioned dielectric protection member and the aforementioned dielectric film for the second electrode forms the aforementioned dielectric space; the aforementioned protected dielectric film is the aforementioned dielectric film for the first electrode; the aforementioned first electrode component further includes the aforementioned dielectric protection member; the lower surface of the aforementioned dielectric film for the first electrode has a concave bottom surface and a convex bottom surface provided around the aforementioned concave bottom surface, the aforementioned convex bottom surface is formed at a higher position in the height direction than the aforementioned concave bottom surface, the aforementioned concave bottom surface overlaps with the aforementioned dielectric protection member when viewed from above, and the aforementioned convex bottom surface does not overlap with the aforementioned dielectric protection member when viewed from above; the aforementioned electrode unit further includes: a dielectric film support member, which has a dielectric support surface that supports the aforementioned convex bottom surface of the aforementioned dielectric film for the first electrode from below;The dielectric film pressing member is used to press the aforementioned dielectric film for the first electrode from above; the aforementioned dielectric film pressing member does not overlap with the aforementioned conductive film for the first electrode when viewed from above; the aforementioned dielectric film support member further has a protective member support surface that supports the aforementioned dielectric protective member from below; the aforementioned dielectric support surface is formed at a higher position in the height direction than the aforementioned protective member support surface, and the height difference between the aforementioned dielectric support surface and the aforementioned protective member support surface is set such that a protective member space is formed between the lower surface of the aforementioned dielectric film for the first electrode and the upper surface of the aforementioned dielectric protective member.

9. An active gas generating apparatus comprising an electrode unit, wherein the electrode unit activates a raw material gas supplied to a discharge space to generate an active gas; the electrode unit comprises: a first electrode forming portion; and a second electrode forming portion disposed below the first electrode forming portion; the first electrode forming portion comprising a first electrode dielectric film and a first electrode conductive film, the first electrode conductive film being disposed on the upper surface of the first electrode dielectric film; the second electrode forming portion comprising a second electrode dielectric film and a second electrode conductive film, the second electrode conductive film being disposed on the lower surface of the second electrode dielectric film; a dielectric space is provided between the first electrode dielectric film and the second electrode dielectric film; the discharge space comprises a main discharge space, the main discharge space being the area within the dielectric space where the first and second electrode conductive films overlap when viewed from above; The aforementioned electrode unit further includes a dielectric protection member, which is disposed on the dielectric space side relative to the dielectric film to be protected, which is at least one of the dielectric film for the first electrode and the dielectric film for the second electrode. The dielectric protection member is made of a material that has the protective property of blocking the irradiation of the dielectric film to be protected by ions generated by the dielectric shielding discharge during the discharge space, and does not chemically react with the ions. The dielectric protection member is disposed in close contact with the dielectric film to be protected without gaps. The dielectric protection member is disposed in close contact on the lower surface of the dielectric film for the first electrode, and the space between the dielectric protection member and the dielectric film for the second electrode forms the dielectric space. The dielectric film to be protected is the dielectric film for the first electrode. The first electrode component further includes the dielectric protection member. The aforementioned active gas generating device further includes a power supply, which applies a voltage between the conductive film for the first electrode in the first electrode configuration and the conductive film for the second electrode in the second electrode configuration; when the applied voltage is applied, the aforementioned dielectric shielding discharge is generated in the aforementioned discharge space; the lower surface of the aforementioned dielectric film for the first electrode has a concave bottom surface and a convex bottom surface disposed around the periphery of the aforementioned concave bottom surface, the aforementioned convex bottom surface is formed at a higher position in the height direction than the aforementioned concave bottom surface, the aforementioned dielectric protection member is disposed on the aforementioned concave bottom surface, and the aforementioned dielectric protection member is not disposed on the aforementioned convex bottom surface; the aforementioned electrode unit further includes: a dielectric film support member having a dielectric support surface that supports the aforementioned convex bottom surface of the aforementioned dielectric film for the first electrode from below; and a dielectric film pressing member that presses the aforementioned dielectric film for the first electrode from above; the aforementioned dielectric film pressing member does not overlap with the aforementioned conductive film for the first electrode when viewed from above;The aforementioned dielectric film support member further includes a protective member fixing auxiliary surface, which is disposed below the aforementioned dielectric protective member located on the bottom surface of the aforementioned recess; the aforementioned electrode unit further includes an elastic member inserted between the aforementioned protective member fixing auxiliary surface and the lower surface of the aforementioned dielectric protective member, and the elastic force of the aforementioned elastic member ensures that the bottom surface of the aforementioned recess of the aforementioned first electrode dielectric film and the upper surface of the aforementioned dielectric protective member are in close contact.

10. The active gas generating apparatus as described in claim 9, wherein, The aforementioned concave bottom surface is formed to be circular when viewed from above; the aforementioned convex bottom surface is formed in a ring shape around the periphery of the aforementioned concave bottom surface when viewed from above; the aforementioned protective member fixing auxiliary surface of the aforementioned dielectric film support member is formed in a ring shape when viewed from above; the aforementioned dielectric film support member includes: a groove, which is provided in a ring shape within the aforementioned protective member fixing auxiliary surface when viewed from above; and an O-ring in a ring shape when viewed from above, which is provided within the aforementioned groove; the aforementioned elastic member is the aforementioned O-ring.

11. The active gas generating apparatus as described in claims 2, 3, 5, 6, 8, or 9, further comprising a housing, wherein the housing system houses the aforementioned electrode unit within a space of the housing and is conductive; the housing system has a housing bottom, the housing bottom comprising a flat surface and a conductor housing space recessed from the aforementioned flat surface in a depth direction; the aforementioned electrode unit further comprises a reference potential conductor, the aforementioned reference potential conductor being disposed below the aforementioned second electrode component and housed within the aforementioned conductor housing space; the aforementioned reference potential conductor having an active gas buffer space at its upper part, the aforementioned second electrode component being configured to block the aforementioned active gas buffer space; the aforementioned dielectric film for the second electrode having a dielectric through-hole in the region overlapping with the aforementioned active gas buffer space when viewed from above, and the aforementioned conductive film for the second electrode having a conductive film opening in the region overlapping with the aforementioned active gas buffer space when viewed from above, the conductive film opening overlapping with the aforementioned dielectric through-hole when viewed from above; The aforementioned active gas generating device further comprises a plurality of gas outlets, each extending from the bottom surface of the aforementioned active gas buffer space through the aforementioned reference potential conductor, wherein the plurality of gas outlets do not overlap with the aforementioned dielectric penetration when viewed from above; the aforementioned discharge space, in addition to the aforementioned main discharge space, also comprises an auxiliary discharge space including the aforementioned dielectric penetration and a portion of the aforementioned active gas buffer space; the active gas output from the aforementioned plurality of gas outlets is defined as a plurality of partial active gases; the aforementioned bottom of the aforementioned housing has a housing opening in the area overlapping with the aforementioned active gas buffer space when viewed from above, through which the aforementioned plurality of partial active gas systems are guided downward; the aforementioned housing opening comprises a conical region with an opening area that expands downward; The aforementioned plurality of gas outlets are arranged such that they become closer to each other as they face downwards, so that the aforementioned plurality of partially active gases collide in the impact zone, and the aforementioned impact zone exists within the aforementioned conical region or above the aforementioned conical region.

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