Film structure and manufacturing method thereof

Abstract

This invention provides a film structure and its preparation method. A first ceramic coating is formed using an atmospheric plasma spraying process or an evaporation process. A second ceramic coating is formed on the side of the first ceramic coating away from the substrate using a suspension plasma spraying process. A third ceramic coating is formed on the side of the second ceramic coating away from the substrate using a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process exhibits good interfacial adhesion. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process reduces defects such as cracks in the film structure, resulting in a smooth, dense, and crack-free film structure surface. When applied to the lining of a plasma equipment cavity, this enhances the cleaning function of plasma cleaning for process byproducts adhering to the cavity lining.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a film layer structure and a preparation method thereof. Prior Art

[0002] The usual inductively coupled plasma etching process (ICP etching) is completed by alternating between wafer etching and subsequent chamber in-situ cleaning or no-wafer cleaning (NWC) workflows.

[0003] Among them, the purpose of plasma cleaning is to remove defects or deposited process by-products generated inside the chamber after plasma etching the wafer. As the long-time etching process progresses, the defects or deposited process by-products continuously increase, making it difficult for the next wafer to be processed in a stable chamber environment. This requires plasma cleaning to be performed after each wafer etching to clean the chamber deposits.

[0004] However, the effective cleaning effect of plasma cleaning also depends on the state of the surface of the workpiece film layer structure inside the chamber. Generally, the process by-products on the surface of a smoother and flatter workpiece film layer structure are more easily removed by plasma cleaning.

[0005] However, the surface of the currently used chamber liner is often not very smooth and flat, with high surface defects and roughness, which seriously affects the stability and yield of the plasma etching process. Summary of the Invention

[0006] In view of this, this Summary of the Invention section is provided to briefly introduce concepts, which will be described in detail in the following Detailed Description section. This Summary of the Invention section is not intended to identify the key features or essential features of the claimed technical solution, nor is it intended to limit the scope of the claimed technical solution.

[0007] The purpose of the present invention is to provide a film layer structure and a preparation method thereof. The surface of the film layer structure is smooth, dense, and free of defects such as cracks, which can improve the stability and yield of the plasma etching process.

[0008] To achieve the above purpose, the present invention has the following technical solutions: In a first aspect, an embodiment of the present invention provides a method for preparing a film layer structure, which is applied to a plasma device, including: Providing a substrate; Forming a multi-layer ceramic coating on one side of the substrate; the roughness and porosity of the multi-layer ceramic coating gradually decrease from the side close to the substrate to the side far from the substrate.

[0009] In a possible implementation manner, the multi-layer ceramic coating includes a first ceramic coating, a second ceramic coating, and a third ceramic coating. Forming the multi-layer ceramic coating on one side of the substrate includes: Using an atmospheric plasma spraying process or an evaporation process to form a first ceramic coating on the substrate; Using a suspension plasma spraying process to form a second ceramic coating on the side of the first ceramic coating far from the substrate; Using a chemical vapor deposition process, a physical vapor deposition process, a plasma-assisted chemical vapor deposition process, or a plasma-enhanced physical vapor deposition process to form a third ceramic coating on the side of the second ceramic coating far from the substrate.

[0010] In a possible implementation manner, the material of the substrate includes aluminum or an aluminum alloy.

[0011] In a possible implementation manner, the material of the first ceramic coating includes alumina, yttria, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

[0012] In a possible implementation manner, the material of the second ceramic coating includes alumina, yttria, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

[0013] In a possible implementation manner, the material of the third ceramic coating includes alumina, yttria, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

[0014] In a possible implementation manner, the second ceramic coating includes a first ceramic sub-coating and a second ceramic sub-coating.

[0015] In a possible implementation manner, the thickness of the first ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

[0016] In a possible implementation, the thickness of the second ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

[0017] In a possible implementation, the thickness of the third ceramic coating is greater than or equal to 2 μm and less than or equal to 200 μm.

[0018] In a possible implementation, the porosity of the first ceramic coating is greater than or equal to 3% and less than or equal to 8%.

[0019] In a possible implementation, the porosity of the second ceramic coating is less than or equal to 3%.

[0020] In a possible implementation, the porosity of the third ceramic coating is less than or equal to 0.1%.

[0021] In a possible implementation, the roughness of the first ceramic coating is greater than or equal to 3 μm and less than or equal to 8 μm.

[0022] In a possible implementation, the roughness of the second ceramic coating is greater than or equal to 1.0 μm and less than or equal to 4 μm.

[0023] In a possible implementation, the roughness of the third ceramic coating is less than or equal to 1 μm.

[0024] In a possible implementation, the aluminum alloy includes copper element, silicon element, iron element, manganese element, magnesium element, zinc element, chromium element, and / or titanium element.

[0025] In a possible implementation, the aluminum alloy is 6061 aluminum plate alloy.

[0026] In a second aspect, an embodiment of the present invention provides a film layer structure, which is applied to plasma equipment, including plasma etching equipment and plasma coating equipment, and is prepared by the method as described above, including: A substrate; A multi-layer ceramic coating located on one side of the substrate; the roughness and porosity of the multi-layer ceramic coating gradually decrease from the side close to the substrate to the side far from the substrate.

[0027] In a possible implementation manner, the multi-layer ceramic coating includes a first ceramic coating, a second ceramic coating, and a third ceramic coating; The materials of the first ceramic coating, the second ceramic coating, and the third ceramic coating include alumina, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

[0028] Compared with the prior art, the embodiments of the present invention have the following beneficial effects:

[0029] The embodiments of the present invention provide a film layer structure and a preparation method. The method includes: providing a substrate; forming a first ceramic coating on the substrate by using an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on a side of the first ceramic coating away from the substrate by using a suspension plasma spraying process; and forming a third ceramic coating on a side of the second ceramic coating away from the substrate by using a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present invention has good interfacial bonding force and is convenient to combine with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film layer structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film layer structure. Thus, a smooth, dense, and crack-free film layer structure surface is obtained. Applying this smooth, dense, and crack-free film layer structure to the inner lining of the chamber of the plasma equipment helps to enhance the plasma cleaning function of the plasma cleaning of the process by-products attached to the inner lining of the chamber during the plasma etching process, and can improve the stability and yield of the plasma etching process. Brief Description of the Drawings

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without making creative efforts, other drawings can also be obtained based on these drawings. Combined with the drawings and referring to the following specific implementation manners, the above and other features, advantages, and aspects of the various embodiments of the present disclosure will become more obvious. Throughout the drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic, and the original components and elements are not necessarily drawn to scale. FIG. 1 shows a flowchart of a method for preparing a film layer structure provided by an embodiment of the present invention; FIG. 2 shows a schematic cross-sectional structure of a film layer structure provided by an embodiment of the present invention. Embodiment

[0031] To make the above objects, features, and advantages of the present invention more apparent and understandable, the following will describe in detail the specific embodiments of the present invention in conjunction with the drawings.

[0032] In the following description, many specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention may be practiced in other ways different from those described herein. Those skilled in the art can make similar generalizations without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0033] As described in the related art, the typical inductively coupled plasma etching process is completed by alternating between wafer etching and subsequent in-situ plasma cleaning of the chamber or plasma cleaning without a wafer workflow.

[0034] Among them, the purpose of plasma cleaning is to remove the defects or deposited process by-products generated inside the chamber after the previous plasma etching of the wafer. As the long-term etching process progresses, the defects or deposited process by-products continuously increase, making it difficult for the next wafer to be processed in a stable chamber environment. This requires plasma cleaning to be performed after each wafer etching to clean the chamber deposits.

[0035] However, the effective cleaning effect of plasma cleaning also depends on the state of the surface of the workpiece film structure inside the chamber. Generally, the process by-products on the surface of a smoother and flatter workpiece film structure are more easily removed by plasma cleaning.

[0036] However, the surface of the currently used chamber liner is often not very smooth and flat, with relatively high surface defects and roughness, which seriously affects the stability and yield of the plasma etching process.

[0037] Based on the above technical problems, embodiments of the present invention provide a film layer structure and a preparation method. The method includes: providing a substrate; forming a first ceramic coating on the substrate by using an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on one side of the first ceramic coating away from the substrate by using a suspension plasma spraying process; and forming a third ceramic coating on one side of the second ceramic coating away from the substrate by using a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present invention has good interface bonding force, which is convenient for bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film layer structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film layer structure. Thus, a smooth, dense and crack-free film layer structure surface is obtained. Applying this smooth, dense and crack-free film layer structure to the inner lining of the plasma equipment chamber helps to enhance the plasma cleaning function of the plasma cleaning of the process by-products attached to the inner lining of the chamber during the plasma etching process, and can improve the stability and yield of the plasma etching process.

[0038] To better understand the technical solutions and technical effects of the present invention, specific embodiments will be described in detail below with reference to the drawings. [, Exemplary method , ]

[0039] As shown in FIG. 1, FIG. 1 is a flowchart of a preparation method of a film layer structure provided by an embodiment of the present invention, including: Step S101: Provide a substrate.

[0040] In an embodiment of the present invention, as shown in FIG. 2, it is a schematic diagram of a film layer structure provided by an embodiment of the present invention.

[0041] Specifically, the material of the substrate 10 may include aluminum. Optionally, the material of the substrate 10 may include an aluminum alloy. The aluminum alloy provided by the embodiment of the present invention may include copper element, silicon element, iron element, manganese element, magnesium element, zinc element, chromium element and / or titanium element. The embodiment of the present invention uses aluminum or an aluminum alloy as the substrate 10, which is lighter in weight.

[0042] In a possible implementation manner, the aluminum alloy provided by the embodiment of the present invention may be 6061 aluminum plate alloy 6061T. That is, in the embodiment of the present invention, the main alloying elements in the 6061 aluminum plate alloy are magnesium and silicon, which have medium strength, good corrosion resistance, weldability, and good oxidation effect.

[0043] Optionally, in the embodiments of the present invention, a hard anodizing treatment can be performed on the surface of the substrate 10. The hard anodizing treatment forms a layer of hard, wear-resistant and corrosion-resistant oxide film on the surface of the substrate 10, improving the surface hardness and durability of the substrate 10.

[0044] Then, a multi-layer ceramic coating is formed on one side of the substrate 10; the roughness and porosity of the multi-layer ceramic coating gradually decrease from the side close to the substrate 10 to the side far from the substrate 10. Thus, in the embodiments of the present invention, a final smooth and dense surface is achieved by gradually reducing the roughness and porosity of the multi-layer ceramic coating.

[0045] Optionally, the multi-layer ceramic coating provided by the embodiments of the present invention may include a first ceramic coating 11, a second ceramic coating 12 and a third ceramic coating 13. Forming the multi-layer ceramic coating on one side of the substrate 10 may specifically include the following steps: S102-S104.

[0046] Step S102: Using an atmospheric plasma spraying process or an evaporation process to form a first ceramic coating on the substrate.

[0047] In the embodiments of the present invention, an atmospheric plasma spraying process (APS) or an evaporation process can be used to form a first ceramic coating 11 on the substrate 10.

[0048] Optionally, the material of the first ceramic coating 11 may include alumina, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet. Optionally, the thickness of the first ceramic coating 11 may be greater than or equal to 50 μm and less than or equal to 500 μm. Optionally, the porosity of the first ceramic coating 11 may be greater than or equal to 3% and less than or equal to 8%. Optionally, the roughness of the first ceramic coating is greater than or equal to 3 μm and less than or equal to 8 μm.

[0049] Specifically, the first ceramic coating 11 formed by using the atmospheric plasma spraying process or the evaporation process in the embodiments of the present invention has a certain porosity and tissue defects, but it has good interfacial bonding force, facilitating bonding with the substrate 10 or subsequent formed film layers. And the formed first ceramic coating 11 has a fast film forming speed and relatively low cost.

[0050] However, due to the high surface roughness of the first ceramic coating 11 formed by using an atmospheric plasma spraying process or an evaporation process, there are many porosities, and it is difficult for plasma cleaning to completely remove the deposition products in the coating pores. Long-term accumulation will affect the stability of the chamber process and particles.

[0051] That is, restricted by the thin film deposition process, only the first ceramic coating 11 with a rough surface and large porosity is formed, and a crack-free and defect-free, dense and smooth coating surface cannot be provided, which affects the cleaning ability of plasma cleaning in the plasma etching process.

[0052] Therefore, in the embodiments of the present invention, a second ceramic coating 12 is further formed.

[0053] Step S103: Using a suspension plasma spraying process, form a second ceramic coating on the side of the first ceramic coating away from the substrate.

[0054] In the embodiments of the present invention, a suspension plasma spraying process (Suspension Plasma Spraying, SPS) can be used to form a second ceramic coating 12 on the side of the first ceramic coating 11 away from the substrate 10.

[0055] Specifically, the second ceramic coating 12 formed by using the suspension plasma spraying process in the embodiments of the present invention can be a plasma etching-resistant ceramic film with reduced porosity and roughness.

[0056] Optionally, the material of the second ceramic coating 12 may include alumina, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet. The thickness of the second ceramic coating 12 can be made similar to or the same as the thickness of the first ceramic coating 11, and the surface roughness and porosity of the second ceramic coating 12 are lower than those of the first ceramic coating 11.

[0057] Optionally, the embodiments of the present invention can be configured such that the second ceramic coating 12 includes a first ceramic sub-coating 121 and a second ceramic sub-coating 122 to further reduce the roughness and porosity of the film layer structure.

[0058] Optionally, the thickness of the second ceramic coating 12 can be greater than or equal to 50 μm and less than or equal to 500 μm. The porosity of the second ceramic coating 12 can be less than or equal to 3%. The roughness of the second ceramic coating 12 can be greater than or equal to 1.0 μm and less than or equal to 4 μm.

[0059] The surface of the double-layer coating composed of the first ceramic coating 11 and the second ceramic coating 12 has a relatively low roughness (Ra) and porosity. However, there are still defects such as cracks on the surface of the second ceramic coating 12. Therefore, there is a risk that process by-products will deposit and accumulate due to cracks on the inner lining surface protected by the double-layer coating composed of the first ceramic coating 11 and the second ceramic coating 12, which will affect the cleaning effect of the plasma cleaning on the chamber.

[0060] Therefore, in the embodiment of the present invention, a third ceramic coating 13 is further formed.

[0061] Step S104: Use a chemical vapor deposition process, a physical vapor deposition process, a plasma-assisted chemical vapor deposition process, or a plasma-enhanced physical vapor deposition process to form a third ceramic coating on the side of the second ceramic coating away from the substrate.

[0062] Specifically, in the embodiment of the present invention, a chemical vapor deposition process (Chemical Vapor Deposition, CVD), a physical vapor deposition process (Physical Vapor Deposition, PVD), a plasma-assisted chemical vapor deposition process, or a plasma-enhanced physical vapor deposition process can be used to form a third ceramic coating 13 on the side of the second ceramic coating 12 away from the substrate 10.

[0063] Specifically, the third ceramic coating 13 formed by the chemical vapor deposition process or the physical vapor deposition process in the embodiment of the present invention can be a dense plasma-resistant etching ceramic film with a smooth and defect-free surface.

[0064] Optionally, the material of the third ceramic coating 13 may include alumina, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet. Optionally, the thickness of the third ceramic coating 13 may be greater than or equal to 2 μm and less than or equal to 200 μm. Optionally, the porosity of the third ceramic coating 13 may be less than or equal to 0.1%. Optionally, the roughness of the third ceramic coating may be less than or equal to 1 μm.

[0065] The materials of the first ceramic coating 11, the second ceramic coating 12, and the third ceramic coating 13 provided in the embodiment of the present invention are of a single type of material, which can ensure the uniformity of the materials of each ceramic coating and avoid the occurrence of coating peeling.

[0066] In the embodiment of the present invention, the thickness of the third ceramic coating 13 is relatively small, which can avoid cracking of the third ceramic coating 13 while ensuring that the surface of the third ceramic coating 13 is smooth and defect-free, and improve the quality of the prepared third ceramic coating 13.

[0067] The third ceramic coating 13 is continuously overlaid on the second ceramic coating 12. Since the ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process, such as yttrium oxide, has a dense structure without cracks and other defects, and depositing on the surface of the second ceramic coating 12 can further reduce the surface roughness of the coating (such as <1um), eliminating the porosity and cracks of the second ceramic coating 12. Therefore, depositing the first ceramic coating 11 / the second ceramic coating 12 / the third ceramic coating 13 on the inner lining surface of the plasma-etched aluminum workpiece in sequence can obtain a smooth, dense and crack-free surface, which helps to enhance the plasma cleaning function of the plasma cleaning on the chamber during the plasma etching process.

[0068] It should be noted that if the third ceramic coating 13 is directly prepared and deposited on the surface of the first ceramic coating 11, since the third ceramic coating 13 is relatively thin, the surface roughness of the inner lining protected by the formed first ceramic coating 11 / the third ceramic coating 13 (such as 5 - 7um) is relatively high, and there is no obvious difference compared with the roughness of the first ceramic coating 11 (3 - 8um), which will affect the cleaning effect of the plasma cleaning on the chamber during the plasma etching process.

[0069] Therefore, in the embodiment of the present invention, the third ceramic coating 13 is deposited on the second ceramic coating 12 again to gradually improve the surface roughness of the coating, and a smooth, dense and crack-free film structure surface is obtained for application in the inner lining of the plasma equipment chamber, which can enhance the cleaning function of the plasma cleaning on the by-products attached to the inner lining of the chamber.

[0070] An embodiment of the present invention provides a film layer structure and a preparation method. The method includes: providing a substrate; forming a first ceramic coating on the substrate by using an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on a side of the first ceramic coating away from the substrate by using a suspension plasma spraying process; and forming a third ceramic coating on a side of the second ceramic coating away from the substrate by using a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present invention has good interfacial bonding force, which is convenient for bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film layer structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film layer structure. Thus, a smooth, dense and crack-free film layer structure surface is obtained. Applying this smooth, dense and crack-free film layer structure on the inner lining of the chamber of the plasma equipment helps to enhance the plasma cleaning function of the plasma cleaning on the process by-products attached to the inner lining of the chamber during the plasma etching process, and can improve the stability and yield of the plasma etching process. [ , Exemplary structure , ]

[0071] An embodiment of the present invention provides a film layer structure. The film layer structure is applied to plasma equipment, including plasma etching equipment and plasma coating equipment, and is prepared by the method as described above, including: a substrate 10; a multi-layer ceramic coating located on one side of the substrate 10; the roughness and looseness of the multi-layer ceramic coating gradually decrease from the side close to the substrate 10 to the side away from the substrate 10.

[0072] In a possible implementation manner, the multi-layer ceramic coating may include a first ceramic coating 11, a second ceramic coating 12, and a third ceramic coating 13. Referring to FIG. 2, a schematic diagram of a film layer structure provided by an embodiment of the present invention is shown. It can be prepared by the method as described above, including: a substrate 10; a first ceramic coating 11 located on one side of the substrate 10; a second ceramic coating 12 located on a side of the first ceramic coating 11 away from the substrate 10; a third ceramic coating 13 located on a side of the second ceramic coating 12 away from the substrate 10.

[0073] In a possible implementation manner, the second ceramic coating 12 includes a first ceramic sub-coating 121 and a second ceramic sub-coating 122.

[0074] An embodiment of the present invention provides a film layer structure. The method for preparing the film layer structure includes: providing a substrate; forming a first ceramic coating on the substrate by using an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on a side of the first ceramic coating away from the substrate by using a suspension plasma spraying process; and forming a third ceramic coating on a side of the second ceramic coating away from the substrate by using a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present invention has good interfacial bonding force, which is convenient for bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film layer structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film layer structure. Thus, a smooth, dense and crack-free surface of the film layer structure is obtained. Applying this smooth, dense and crack-free film layer structure on the inner lining of the chamber of the plasma equipment helps to enhance the plasma cleaning function of the plasma cleaning on the process by-products attached to the inner lining of the chamber during the plasma etching process, and can improve the stability and yield of the plasma etching process.

[0075] Each embodiment in this specification is described in a progressive manner. For the same or similar parts among the embodiments, reference can be made to each other. Each embodiment focuses on the differences from other embodiments. In particular, for the structural embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and reference can be made to the partial description of the method embodiment for the relevant parts.

[0076] The above is only the preferred embodiment of the present invention. Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make many possible changes and modifications to the technical solution of the present invention, or modify it into an equivalent embodiment with equivalent changes, without departing from the scope of the technical solution of the present invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of the protection of the technical solution of the present invention.

[0077] 10: Substrate 11: First ceramic coating 12: Second ceramic coating 121: First ceramic sub-coating 122: Second ceramic sub-coating 13: Third ceramic coating S101, S102, S103, S104: Steps

Claims

1. A method for preparing a film structure, characterized in that the film structure is applied to the surface of the cavity lining of a plasma device, comprising: Provide substrate; A multilayer ceramic coating is formed on one side of the substrate; The roughness and porosity of the multilayer ceramic coating decrease layer by layer from the side closer to the substrate to the side farther from the substrate. The multilayer ceramic coating includes a first ceramic coating, a second ceramic coating, and a third ceramic coating. The formation of the multilayer ceramic coating on one side of the substrate includes: forming the first ceramic coating on the substrate using an atmospheric plasma spraying process or a vapor deposition process. A second ceramic coating is formed on the side of the first ceramic coating away from the substrate using a suspension plasma spraying process; a third ceramic coating is formed on the side of the second ceramic coating away from the substrate using a chemical vapor deposition process, a physical vapor deposition process, a plasma-assisted chemical vapor deposition process, or a plasma-enhanced physical vapor deposition process, wherein the second ceramic coating includes a first ceramic sub-coating and a second ceramic sub-coating.

2. The method as described in request item 1, wherein, The substrate is made of aluminum or an aluminum alloy.

3. The method as described in request item 1, wherein, The material of the first ceramic coating includes alumina, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

4. The method as described in request item 1, wherein, The material of the second ceramic coating includes alumina, yttrium oxide, yttrium fluoride, yttrium fluoride oxyfluoride, or yttrium aluminum garnet.

5. The method as described in request item 1, wherein, The material of the third ceramic coating includes alumina, yttrium oxide, yttrium fluoride, yttrium fluoride oxyfluoride, or yttrium aluminum garnet.

6. The method as described in request item 1, wherein, The thickness of the first ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

7. The method as described in request item 1, wherein, The thickness of the second ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

8. The method as described in request item 1, wherein, The thickness of the third ceramic coating is greater than or equal to 2 μm and less than or equal to 200 μm.

9. The method as described in claim 1, wherein, The porosity of the first ceramic coating is greater than or equal to 3% and less than or equal to 8%.

10. The method as described in claim 1, wherein, The porosity of the second ceramic coating is less than or equal to 3%.

11. The method as described in claim 1, wherein, The porosity of the third ceramic coating is less than or equal to 0.1%.

12. The method as described in claim 1, wherein, The roughness of the first ceramic coating is greater than or equal to 3 μm and less than or equal to 8 μm.

13. The method as described in claim 1, wherein, The roughness of the second ceramic coating is greater than or equal to 1.0 μm and less than or equal to 4 μm.

14. The method as described in claim 1, wherein, The roughness of the third ceramic coating is less than or equal to 1 μm.

15. The method as described in claim 2, wherein, The aluminum alloy includes copper, silicon, iron, manganese, magnesium, zinc, chromium and / or titanium.

16. The method as described in claim 15, wherein, The aluminum alloy is 6061 aluminum plate alloy.

17. A film structure, characterized in that the film structure is applied to the inner lining surface of a plasma device, comprising a plasma etching apparatus and a plasma coating apparatus, and is prepared using the method described in any one of claims 1 to 16, comprising: Substrate; A multilayer ceramic coating located on one side of the substrate; The roughness and porosity of the multilayer ceramic coating decrease layer by layer from the side closer to the substrate to the side farther away from the substrate. The multilayer ceramic coating includes a first ceramic coating, a second ceramic coating, and a third ceramic coating; the second ceramic coating includes a first ceramic sub-coating and a second ceramic sub-coating.

18. The structure as described in claim 17, wherein, The materials of the first ceramic coating, the second ceramic coating, and the third ceramic coating include alumina, yttrium oxide, yttrium fluoride, yttrium fluoride oxyfluoride, or yttrium aluminum garnet.

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