Semiconductor process equipment and ignition chamber therein

Abstract

A semiconductor manufacturing process apparatus and its ignition chamber are disclosed. The ignition chamber includes a chamber body and a delivery pipeline. The chamber body includes an inner combustion chamber wall and an outer combustion chamber wall surrounding the inner combustion chamber wall, forming a dilution gas channel between them. The outer combustion chamber wall is connected to a dilution gas pipeline, which communicates with the dilution gas channel. The inner combustion chamber wall is connected to a fuel gas pipeline and an oxidizing gas pipeline, both of which communicate with the interior of the combustion chamber. The delivery pipeline connects to the process chamber of the semiconductor manufacturing process apparatus, is connected to the outer combustion chamber wall, and communicates with the dilution gas channel. The inner combustion chamber wall has an outlet, which connects the interior of the combustion chamber to the interior of the delivery pipeline. The fuel gas and oxidizing gas react in the combustion chamber to generate reaction products.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing, and more specifically, to a semiconductor process apparatus and its ignition chamber. Prior Technology

[0002] During the operation of the wet oxidation process equipment, the external ignition device heats the ignition chamber via a heater to enable the reaction of hydrogen and oxygen, providing pure, high-temperature steam to the process chamber for forming an oxide film on the silicon wafer surface. As the market progresses, process requirements also increase, necessitating the growth of thinner, more uniform oxide films with fewer particles on the silicon wafer surface.

[0003] To meet process requirements, a suitable amount of nitrogen is introduced into the ignition chamber during hydrogen-oxygen combustion to dilute water vapor, thereby generating a uniform, thin oxide film with fewer particles. In existing technologies, condensation occurs in the nitrogen-introducing pipeline due to the diffusion of high-temperature water vapor, leading to excessive particle counts.

[0004] Therefore, how to avoid excessive particulate matter caused by condensation is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] This application aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and its ignition chamber, which can heat the dilution gas by the heat generated by the reaction of fuel gas and combustion-supporting gas, thereby increasing the temperature of the dilution gas and avoiding the problem of excessive particles caused by the generation of condensate.

[0006] To achieve the purpose of this application, an ignition chamber is provided for semiconductor manufacturing equipment, including a chamber body and delivery lines. The chamber body includes an inner combustion chamber wall and an outer combustion chamber wall surrounding the inner combustion chamber wall, forming a dilution gas passage between the two. The outer combustion chamber wall is connected to a dilution gas line, which communicates with the dilution gas passage. The inner combustion chamber wall is connected to a fuel gas line and a combustion-supporting gas line, both of which communicate with the interior of the combustion chamber.

[0007] The delivery pipeline is used to connect to the process chamber of the semiconductor process equipment. The delivery pipeline is connected to the outer wall of the combustion chamber and communicates with the dilution gas passage. The inner wall of the combustion chamber is provided with an outlet, which communicates with the interior of the combustion chamber and the interior of the delivery pipeline.

[0008] In some embodiments, the fuel gas pipeline is located inside the combustion gas pipeline, and a combustion gas flow channel is formed between the combustion gas pipeline and the fuel gas pipeline, the combustion gas flow channel being in communication with the interior of the combustion chamber.

[0009] In some embodiments, the length of the fuel gas pipeline is greater than the length of the combustion-supporting gas pipeline, the end of the fuel gas pipeline outside the combustion-supporting gas pipeline is a closed end, and the portion of the fuel gas pipeline outside the combustion-supporting gas pipeline is provided with a fuel gas connection pipe on its periphery for connecting to a fuel gas source.

[0010] In some embodiments, the inner wall of the combustion chamber is provided with a fuel gas inlet and an auxiliary combustion gas inlet. The fuel gas inlet connects the fuel gas pipeline to the interior of the combustion chamber, and the auxiliary combustion gas inlet connects the interior of the combustion chamber to the auxiliary combustion gas pipeline. There are two or more auxiliary combustion gas inlets, which are arranged around the fuel gas inlet.

[0011] In some embodiments, both the fuel gas inlet and the combustion gas inlet are located on the side of the combustion chamber wall away from the delivery pipeline.

[0012] In some embodiments, the combustion-supporting gas pipeline is located inside the dilution gas pipeline, and a dilution gas flow channel is formed between the dilution gas pipeline and the combustion-supporting gas pipeline, the dilution gas flow channel being connected to the dilution gas passage.

[0013] In some embodiments, the length of the combustion-supporting gas pipeline is greater than the length of the dilution gas pipeline, the end of the combustion-supporting gas pipeline outside the dilution gas pipeline is a closed end, and the portion of the combustion-supporting gas pipeline outside the dilution gas pipeline is provided with a combustion-supporting gas connecting pipe on its periphery for connecting to a combustion-supporting gas source.

[0014] In some embodiments, the dilution gas pipeline is provided with a dilution gas connection pipe on the periphery of the combustion chamber for connecting to a dilution gas source.

[0015] In some embodiments, the output port is connected to an output pipe, which is located inside the conveying pipeline. The outer diameter of the output pipe is smaller than the inner diameter of the conveying pipeline, and the length of the output pipe is smaller than the length of the conveying pipeline.

[0016] In some embodiments, the inner diameter of the delivery pipeline is 1.5 to 2 times the outer diameter of the output pipe.

[0017] In some embodiments, the ignition chamber further includes a heater and a heat insulation device, the heat insulation device and the heater together forming a heating and heat preservation chamber, the chamber body being located inside the heating and heat preservation chamber; and the heater is also disposed at the connection between the fuel gas pipeline and the combustion gas pipeline and the chamber body, and the fuel gas pipeline, the combustion gas pipeline and the chamber body are all partially located inside the heater.

[0018] This application also provides a semiconductor manufacturing apparatus, including a manufacturing chamber and the aforementioned ignition chamber provided in this application, wherein the ignition chamber is connected to the manufacturing chamber via the delivery pipeline.

[0019] This application has the following beneficial effects:

[0020] The ignition chamber provided in this application is used in semiconductor process equipment. It includes a chamber body and a delivery pipeline. The chamber body includes an inner wall of the combustion chamber and an outer wall of the combustion chamber surrounding the inner wall of the combustion chamber, forming a dilution gas channel between the two. The outer wall of the combustion chamber is connected to a dilution gas pipeline, which is connected to the dilution gas channel. The inner wall of the combustion chamber is connected to a fuel gas pipeline and a combustion-supporting gas pipeline, both of which are connected to the interior of the combustion chamber. The delivery pipeline is used to connect to the process chamber of the semiconductor process equipment. The delivery pipeline is connected to the outer wall of the combustion chamber and is connected to the dilution gas channel. The inner wall of the combustion chamber is provided with an outlet, which connects the interior of the combustion chamber to the interior of the delivery pipeline.

[0021] During the process, fuel gas and combustion-supporting gas react in the combustion chamber to generate reaction products. The heat generated during the reaction heats the dilution gas in the dilution gas channel. Subsequently, the reaction products and dilution gas are mixed in the delivery pipeline and delivered to the process chamber. Because the temperature of the heated dilution gas is higher than the dew point temperature of the reaction products, condensation of the reaction products is avoided, thus preventing the problem of excessive particulate matter.

[0022] This application also provides a semiconductor manufacturing apparatus including the above-described ignition chamber, and has the aforementioned advantages. Simple Explanation of the Diagram

[0023] When read in conjunction with the accompanying drawings, the following detailed description is the best way to understand the nature of this disclosure. It should be noted that, according to standard industry practice, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of explanation. Figure 1 is a schematic diagram of the semiconductor manufacturing equipment provided in this application; Figure 2 is a schematic diagram of the structure of the chamber body in Figure 1; Figure 3 is a partial enlarged view of the chamber body in Figure 2; Figure 4 is a cross-sectional view of the chamber body in Figure 2. Implementation

[0024] The following disclosure provides numerous different embodiments or instances of various components for implementing this disclosure. Specific examples of components and configurations are described below to simplify this disclosure. Of course, these are merely examples and not intended to be limiting. For example, in the following description, a first component formed above or on a second component may include embodiments in which the first and second components are formed in direct contact, and may also include embodiments in which an additional component may be formed between the first and second components such that the first and second components are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various instances of this disclosure. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0025] Furthermore, for ease of description, spatial relative terms such as "below," "below," "down," "above," "up," and similar terms may be used herein to describe the relationship between one element or component and another element or component(s), as illustrated in the figures. Spatial relative terms are intended to cover different orientations of the device in use or operation other than those depicted in the figures. The device may be oriented in other ways (rotated 90 degrees or otherwise) and therefore the spatial relative descriptive terms used herein may be interpreted in the same way.

[0026] Although the numerical ranges and parameters stated in this disclosure are approximate, the values ​​stated in specific examples are reported as precisely as possible. However, any numerical value inherently contains some error due to the standard deviations found in the respective test measurements. Furthermore, as used herein, the term "approximately" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "approximately" means within one acceptable standard error of the average when considered by a person skilled in the art. Except in operational / working examples, or unless otherwise expressly specified, all numerical ranges, quantities, values, and percentages such as the quantity of material disclosed herein, duration of time, temperature, operating conditions, ratios of quantities, and the like should be understood to be modified by the term "approximately" in all examples. Accordingly, unless indicated to the contrary, the numerical parameters stated in this disclosure and the appended claims are approximate values ​​that may vary as needed. At a minimum, each numerical parameter should be interpreted based on the number of significant digits reported and by applying common rounding techniques. Ranges may be expressed herein as from one endpoint to another or between two endpoints. All ranges disclosed herein include endpoints unless otherwise specified.

[0027] The ignition chamber provided in this application is used in semiconductor manufacturing equipment. As shown in Figures 1 and 2, the ignition chamber includes a chamber body 200 and a delivery line 207. The chamber body 200 includes an inner combustion chamber wall 205 and an outer combustion chamber wall 204 surrounding the inner combustion chamber wall 205, forming a dilution gas channel 204a between them. The inner combustion chamber wall 205 is connected to a fuel gas line 208 and an auxiliary combustion gas line 209. The inner cavity of the inner combustion chamber wall 205 is the interior of the combustion chamber. Both the fuel gas line 208 and the auxiliary combustion gas line 209 are connected to the interior of the combustion chamber. The fuel gas and auxiliary combustion gas enter the combustion chamber through the fuel gas line 208 and the auxiliary combustion gas line 209, respectively, and react inside the combustion chamber to generate products. The delivery line 207 is used to connect to the process chamber 400 of the semiconductor manufacturing equipment. The inner combustion chamber wall 205 has an outlet that connects the interior of the combustion chamber to the interior of the delivery line 207. The outlet is located on the side of the combustion chamber wall 205 facing the delivery pipeline 207. One end of the delivery pipeline 207 is connected to the outlet, thereby connecting the interior of the combustion chamber with the delivery pipeline 207. The other end of the delivery pipeline 207 is connected to the process chamber 400 and communicates with the interior of the process chamber 400, allowing the reaction products to be delivered into the process chamber 400 via the delivery pipeline 207. In one specific embodiment of this application, the fuel gas is hydrogen, the combustion-supporting gas is oxygen, and the reaction product is water vapor. Users can select the fuel gas and combustion-supporting gas as needed, and no limitation is made here.

[0028] A dilution gas pipeline 210 is connected to the outer wall 204 of the combustion chamber, and the dilution gas pipeline 210 is connected to the dilution gas channel 204a. A delivery pipeline 207 is connected to the outer wall 204 of the combustion chamber and is also connected to the dilution gas channel 204a. The dilution gas enters the delivery pipeline 207 through the dilution gas pipeline 210 and the dilution gas channel 204a, diluting the reaction products in the delivery pipeline 207 to an appropriate concentration, and then enters the process chamber 400 along with the reaction products. The dilution gas typically does not react with the reaction products and does not affect the process. In the specific embodiment of this application, the dilution gas is nitrogen, but users may use other dilution gases as needed, which are not limited here.

[0029] In some embodiments, the outer wall of the combustion chamber 204 and the delivery pipeline 207 can be integrally formed structural components, thereby improving the structural strength of the ignition chamber and extending its service life. Of course, the outer wall of the combustion chamber 204 and the delivery pipeline 207 can also be connected by welding or other methods, which is not limited here.

[0030] In this embodiment, the reaction of fuel gas and combustion-supporting gas inside the combustion chamber generates heat, which heats the dilution gas in the dilution gas channel 204a, making the dilution gas higher than the dew point temperature of the reaction products. The dilution gas can also heat the delivery pipeline 207, preventing the reaction products from condensing on the inner wall of the delivery pipeline 207 and preventing the reaction products from condensing into droplets during the delivery of the reaction products to the process chamber 400, thus avoiding the problem of excessive particle size.

[0031] In some embodiments, the ignition chamber further includes a heater 100, which surrounds at least a portion of the chamber body 200 and is used to heat the fuel gas and combustion-supporting gas, enabling them to react inside the combustion chamber. As shown in FIG1, the heater 100 may be correspondingly disposed at the connection points between the fuel gas pipeline 208 and the combustion-supporting gas pipeline 209 and the chamber body 200, with the fuel gas pipeline 208, the combustion-supporting gas pipeline 209, and the chamber body 200 all partially located inside the heater 100. The heater 100 heats the fuel gas and combustion-supporting gas in the fuel gas pipeline 208, the combustion-supporting gas pipeline 209, and the chamber body 200, causing them to reach their ignition point and react in the combustion chamber. Additionally, the dilution gas pipeline 210 may also be partially located inside the heater 100. While heating the fuel gas and combustion-supporting gas, the heater 100 also heats the dilution gas in the dilution gas pipeline 210. Furthermore, the heater 100 also heats the dilution gas in the dilution gas passage 204a. The dilution gas undergoes two heating processes as it flows sequentially through dilution gas line 210 and dilution gas channel 204a, further increasing its temperature to ensure it remains above the dew point temperature of the reaction products. Of course, the heater 100 can also employ other structures, which are not limited here.

[0032] In some embodiments, the ignition chamber further includes a heat insulation device 300, which may be disposed around a portion of the chamber body 200 to reduce heat dissipation from the chamber body 200. As shown in FIG1, the heat insulation device 300 and the heater 100 together form a heating and insulation chamber, and the chamber body 200 is located within the heating and insulation chamber. The heat insulation device 300 can insulate the dilution gas in the dilution gas channel 204a, reduce heat dissipation from the dilution gas, increase the heat of the dilution gas, and reduce the risk of reaction products condensing in the dilution gas. In addition, the heat insulation device 300 can also reduce the release of heat to the outside of the ignition chamber, reducing the risk of high temperature damaging other components.

[0033] In some embodiments, the fuel gas pipeline 208 is located inside the combustion gas pipeline 209. Further, the fuel gas pipeline 208 and the combustion gas pipeline 209 are, for example, coaxially arranged. As shown in Figures 2 and 3, a fuel gas flow channel is formed inside the fuel gas pipeline 208, and a combustion gas flow channel 209a is formed between the combustion gas pipeline 209 and the fuel gas pipeline 208. The inner wall 205 of the combustion chamber is provided with a fuel gas inlet 211 and a combustion gas inlet 212. The fuel gas inlet 211 connects the interior of the combustion chamber with the fuel gas flow channel inside the fuel gas pipeline 208, and the combustion gas inlet 212 connects the interior of the combustion chamber with the combustion gas flow channel 209a. Fuel gas and combustion gas enter the interior of the combustion chamber through the fuel gas inlet 211 and the combustion gas inlet 212, respectively. The fuel gas pipeline 208 and the combustion gas pipeline 209 form a double-layer pipe structure, which saves space and improves the structural strength of the pipes. Of course, users can also set the distribution of fuel gas pipeline 208 and combustion-supporting gas pipeline 209 as needed. For example, fuel gas pipeline 208 can be set outside combustion-supporting gas pipeline 209, which is not limited here.

[0034] In some embodiments, both the fuel gas inlet 211 and the combustion gas inlet 212 are located on the side of the combustion chamber wall 205 away from the delivery pipeline 207. As shown in FIG2, the fuel gas inlet 211 and the combustion gas inlet 212 are both far from the outlet, thus providing sufficient reaction space for the fuel gas and combustion gas. The fuel gas and combustion gas can react fully inside the combustion chamber, and the resulting reaction products are discharged from the outlet. This reduces the risk of insufficient reaction when the fuel gas and combustion gas enter the process chamber 400, and improves the reliability of the process. In addition, the user can also reasonably set the heating temperature of the heater 100 to increase the reaction rate of the fuel gas and combustion gas, so that the fuel gas and combustion gas can react fully.

[0035] In some embodiments, the number of combustion gas inlets 212 is two or more, arranged around the fuel gas inlet 211. In the specific embodiment shown in Figure 4, the number of combustion gas inlets 212 is eight, evenly distributed around the fuel gas inlet 211, for example, in a square distribution. By using two or more combustion gas inlets 212 around the fuel gas inlet 211, the contact area between the combustion gas and fuel gas is increased when the combustion gas flows into the combustion chamber, thereby accelerating the reaction rate. The diameter of the combustion gas inlet 212 can be smaller than the diameter of the fuel gas inlet 211. Controlling the flow rates of the fuel gas and combustion gas allows for sufficient reaction between them, preventing excess fuel gas or combustion gas from affecting the process. Of course, the combustion gas inlets 212 can adopt other distribution methods, such as a circular distribution; the number of combustion gas inlets 212 is also not limited to this.

[0036] In some embodiments, the chamber body 200 may be cylindrical. The fuel gas inlet 211 and outlet may be located at the midpoints of the two end faces of the chamber body 200, for example, coaxially with the chamber body 200, and the combustion-supporting gas inlet 212 may be arranged around the fuel gas inlet 211. In this way, the fuel gas and combustion-supporting gas can react sufficiently inside the combustion chamber. Of course, the shape of the chamber body 200, and the positions of the fuel gas inlet 211 and outlet, can be set according to user needs and are not limited here.

[0037] In some embodiments, the length of the fuel gas pipeline 208 is greater than the length of the combustion-supporting pipeline 209. The end of the fuel gas pipeline 208 outside the combustion-supporting pipeline 209 is a closed end, and the portion of the fuel gas pipeline 208 outside the combustion-supporting pipeline 209 has a fuel gas connecting pipe 201 on its periphery for connecting to a fuel gas source. As shown in Figure 2, the end of the fuel gas pipeline 208 away from the chamber body 200 extends to the outside of the combustion-supporting pipeline 209, forming a first connector. The end of the fuel gas pipeline 208 away from the chamber body 200 has a first end plate, which seals the end of the fuel gas pipeline 208, forming a closed end to ensure the sealing of the fuel gas flow passage inside the fuel gas pipeline 208. The fuel gas connecting pipe 201 is connected peripherally to the first connector (i.e., the portion of the fuel gas pipeline 208 located outside the combustion-supporting pipeline 209). The fuel gas connecting pipe 201 is used to connect to a fuel gas source, and fuel gas can enter the fuel flow channel inside the fuel gas pipeline 208 through the fuel gas connecting pipe 201. Of course, in practical applications, the end of the fuel gas pipeline 208 can also be an open end, that is, the aforementioned first end plate is omitted, and the fuel gas connecting pipe 201 is sealed to the open end.

[0038] In some embodiments, the combustion-supporting gas pipeline 209 is located inside the dilution gas pipeline 210. Further, the combustion-supporting gas pipeline 209 and the dilution gas pipeline 210 are, for example, coaxially arranged. As shown in Figures 2 and 3, a dilution gas flow channel 210a is formed between the dilution gas pipeline 210 and the combustion-supporting gas pipeline 209. The dilution gas flow channel 210a communicates with the dilution gas passage 204a, allowing the dilution gas to flow into the dilution gas passage 204a along the dilution gas flow channel 210a. The fuel gas pipeline 208, the combustion-supporting gas pipeline 209, and the dilution gas pipeline 210 can form a three-layer pipe structure, further reducing the space occupied by the pipelines and increasing the structural strength of the pipelines, thus reducing the risk of pipeline damage. Of course, this application is not limited to this. In practical applications, any two of the fuel gas pipeline 208, the combustion-supporting gas pipeline 209, and the dilution gas pipeline 210 can form a two-layer pipe structure, with the third set separately; or all three can be set separately.

[0039] In some embodiments, the length of the combustion-supporting gas pipeline 209 is greater than the length of the dilution gas pipeline 210. The end of the combustion-supporting gas pipeline 209 outside the dilution gas pipeline 210 is a closed end, and the portion of the combustion-supporting gas pipeline 209 outside the dilution gas pipeline 210 is provided with a combustion-supporting gas connecting pipe 202 for connecting to a combustion-supporting gas source on its periphery. As shown in Figure 2, the end of the combustion-supporting gas pipeline 209 away from the chamber body 200 extends to the outside of the dilution gas pipeline 210, forming a second connector. The end of the combustion-supporting gas pipeline 209 away from the chamber body 200 is provided with an annular second end plate. The inner ring of the second end plate is sealed to the fuel gas pipeline 208, and the outer ring of the second end plate is sealed to the combustion-supporting gas pipeline 209, thereby sealing the end of the combustion-supporting gas pipeline 209, i.e., forming a closed end. The combustion gas connecting pipe 202 is peripherally connected to the second connector (i.e., the portion of the combustion gas pipeline 209 located outside the dilution gas pipeline 210). The combustion gas connecting pipe 202 is used to connect to a combustion gas source, and the combustion gas can enter the combustion gas pipeline 209 through the combustion gas connecting pipe 202. With the help of the aforementioned second end plate, the end of the combustion gas pipeline 209 away from the chamber body 200 can be sealed, thereby ensuring the sealing of the combustion gas flow channel 209a. Based on this, in embodiments where the length of the fuel gas pipeline 208 is greater than the length of the combustion gas pipeline 209, by connecting the combustion gas connecting pipe 202 to the second connector peripherally, the fuel gas pipeline 208 can be avoided in space.

[0040] In some embodiments, the end of the dilution gas pipeline 210 furthest from the combustion chamber is a closed end, and a dilution gas connecting pipe 203 is provided around the periphery of the dilution gas pipeline 210. As shown in FIG2, an annular third end plate is provided at the end of the dilution gas pipeline 210 furthest from the chamber body 200. The inner ring of the third end plate is sealed to the combustion-supporting gas pipeline 209, and the outer ring of the third end plate is sealed to the dilution gas pipeline 210, thereby sealing the end of the dilution gas pipeline 210, i.e., forming a closed end. The dilution gas connecting pipe 203 can be perpendicular to the dilution gas pipeline 210 and connected to the dilution gas pipeline 210 around its periphery. The dilution gas connecting pipe 203 is used to connect to the dilution gas source, and the dilution gas can enter the dilution gas flow channel 210a through the dilution gas connecting pipe 203. With the help of the aforementioned third end plate, the end of the dilution gas pipeline 210 away from the combustion chamber can be sealed, thereby ensuring the sealing of the dilution gas flow channel 210a. Based on this, in embodiments where the length of the combustion gas pipeline 209 is greater than the length of the dilution gas pipeline 210, by connecting the dilution gas connecting pipe 203 to the dilution gas pipeline 210 around the periphery of the dilution gas pipeline 210, the combustion gas pipeline 209 can be avoided in space.

[0041] In some embodiments, the fuel gas pipeline 208 is fitted inside the combustion-supporting gas pipeline 209 and welded to the inner wall 205 of the combustion chamber. The combustion-supporting gas pipeline 209 is fitted inside the dilution gas pipeline 210 and welded to the inner wall 205 of the combustion chamber. The inner wall 205 of the combustion chamber is welded to the combustion-supporting gas pipeline 209, and the outer wall 204 of the combustion chamber surrounds the inner wall 205 of the combustion chamber and is welded to the dilution gas pipeline 210.

[0042] In some embodiments, the output port is connected to an output pipe 206, which is located inside the conveying pipeline 207. The outer diameter of the output pipe 206 is smaller than the inner diameter of the conveying pipeline 207. Further, the output pipe 206 and the conveying pipeline 207 are coaxially arranged, for example, and the length of the output pipe 206 is smaller than the length of the conveying pipeline 207. As shown in FIG2, the high-temperature reaction products generated by the fuel gas and the combustion-supporting gas enter the conveying pipeline 207 through the output pipe 206. The dilution gas can be introduced into the conveying pipeline 207 through the flow channel between the conveying pipeline 207 and the output pipe 206 and mix with the reaction products of the fuel gas and the combustion-supporting gas in the conveying pipeline 207.

[0043] For example, the inner diameter of the delivery pipeline 207 is 1.5 to 2 times the outer diameter of the output pipe 206. Of course, users can also set the inner diameter of the delivery pipeline 207 and the outer diameter of the output pipe 206 as needed, which is not limited here.

[0044] By connecting the output port to the output pipe 206, the relatively small inner diameter of the output pipe 206 causes the reaction products to flow within it under the influence of the Venturi effect, resulting in increased flow velocity and decreased pressure. After entering the delivery line 207, the reaction products maintain a high flow velocity, ensuring that the pressure in the area through which they flow is lower than the pressure of the nearby dilution gas. Under this pressure difference, the dilution gas flows towards the reaction products and mixes with them. Ultimately, the dilution gas, driven by the reaction products, flows towards the process chamber 400. Utilizing this effect, the reaction products can rapidly carry the dilution gas to the process chamber 400, preventing backflow of reaction products into the dilution gas channel 204a, thus eliminating the problem of reaction product condensation at its source.

[0045] In some embodiments, the output pipe 206 and the inner wall of the combustion chamber 205 may be integrally formed, and the delivery pipeline 207 and the outer wall of the combustion chamber 204 may be integrally formed.

[0046] In some embodiments, the chamber body 200, the delivery pipeline 207, the output pipe 206, and the three-layer pipe structure are all made of quartz. Quartz can withstand high temperatures and has high structural strength, which can meet the process requirements. Of course, users can also choose other materials as needed, such as ceramics, etc., which are not limited here.

[0047] This application also provides a semiconductor manufacturing apparatus, including a process chamber 400 and an ignition chamber as described in the above embodiments.

[0048] In some embodiments, the process chamber 400 is provided with a connecting flange, and the delivery line 207 of the ignition chamber is connected to the connecting flange, thus connecting the ignition chamber and the process chamber 400. Fuel gas and combustion-supporting gas react inside the ignition chamber to generate reaction products. A dilution gas dilutes the reaction products and, together with the reaction products, is delivered along the delivery line 207 and the connecting flange to the process chamber 400, where the reaction products participate in the process. The structure of other parts of the semiconductor process equipment can be referenced from the prior art and will not be described in detail here.

[0049] When the fuel gas and combustion-supporting gas react in the ignition chamber, they heat the dilution gas, increasing its temperature. This ensures that the temperature of the dilution gas remains above the dew point temperature of the reaction products during transport, thus preventing condensation and excessive particle size. The diluted reaction products enter the process chamber 400 in a gaseous state and react there, forming a uniform film on the wafer surface. This improves the process level and enhances product performance.

[0050] The foregoing summarizes the features of several embodiments, enabling those skilled in the art to better understand the nature of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures for implementing the embodiments described herein and / or achieving the same benefits. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and modifications can be made herein without departing from the spirit and scope of this disclosure.

[0051] 100: Heater 200: Chamber body 201: Fuel gas connection pipe 202: Gas-supporting connection pipe 203: Dilution gas connection pipe 204: Combustion chamber exterior wall 204a: Dilution gas channel 205: Combustion chamber wall 206: Output tube 207: Delivery Pipeline 208: Fuel gas pipeline 209: Gas-supporting pipeline 209a: Combustion-supporting flow channel 210: Dilution gas pipeline 210a: Dilution airflow channel 211: Fuel gas inlet 212: Gas-supporting inlet 300: Insulation device 400: Process Chamber

Claims

1. An ignition chamber for a semiconductor process apparatus, comprising a chamber body and a delivery line, the chamber body comprising an inner combustion chamber wall and an outer combustion chamber wall surrounding the inner combustion chamber wall, forming a dilution gas passage between the two, the outer combustion chamber wall being connected to a dilution gas line communicating with the dilution gas passage, the inner combustion chamber wall being connected to a fuel gas line and a combustion-supporting gas line, both communicating with the interior of the combustion chamber; the delivery line being used to connect to a process chamber of the semiconductor process apparatus, the delivery line being connected to the outer combustion chamber wall and communicating with the dilution gas passage, the inner combustion chamber wall being provided with an outlet communicating with the interior of the combustion chamber and the interior of the delivery line.

2. The ignition chamber as described in claim 1, wherein, The fuel gas pipeline is located inside the combustion gas pipeline, and a combustion gas flow channel is formed between the combustion gas pipeline and the fuel gas pipeline. The combustion gas flow channel is connected to the interior of the combustion chamber.

3. The ignition chamber as described in claim 2, wherein, The length of the fuel gas pipeline is greater than the length of the combustion-supporting gas pipeline. The end of the fuel gas pipeline outside the combustion-supporting gas pipeline is a closed end, and the portion of the fuel gas pipeline outside the combustion-supporting gas pipeline is provided with a fuel gas connection pipe on its periphery for connecting to a fuel gas source.

4. The ignition chamber as described in claim 2, wherein, The combustion chamber has a fuel gas inlet and an auxiliary gas inlet on its inner wall. The fuel gas inlet connects the fuel gas pipeline to the interior of the combustion chamber, and the auxiliary gas inlet connects the interior of the combustion chamber to the auxiliary gas pipeline. There are two or more auxiliary gas inlets, which are arranged around the fuel gas inlet.

5. The ignition chamber as described in claim 4, wherein, Both the fuel gas inlet and the combustion gas inlet are located on the side of the combustion chamber wall away from the delivery pipeline.

6. The ignition chamber as described in any one of claims 1 to 5, wherein, The combustion-supporting gas pipeline is located inside the dilution gas pipeline, and a dilution gas flow channel is formed between the dilution gas pipeline and the combustion-supporting gas pipeline. The dilution gas flow channel is connected to the dilution gas passage.

7. The ignition chamber as described in claim 6, wherein, The length of the combustion-supporting gas pipeline is greater than the length of the dilution gas pipeline. The end of the combustion-supporting gas pipeline outside the dilution gas pipeline is a closed end, and the portion of the combustion-supporting gas pipeline outside the dilution gas pipeline is provided with a combustion-supporting gas connecting pipe on its periphery for connecting to a combustion-supporting gas source.

8. The ignition chamber as described in claim 7, wherein, The dilution gas pipeline is located away from the combustion chamber and has a dilution gas connection pipe on its periphery for connecting to the dilution gas source.

9. The ignition chamber as described in any one of claims 1 to 5, wherein, The output port is connected to an output pipe, which is located inside the conveying pipeline. The outer diameter of the output pipe is smaller than the inner diameter of the conveying pipeline, and the length of the output pipe is smaller than the length of the conveying pipeline.

10. The ignition chamber as described in claim 9, wherein, The inner diameter of the delivery pipeline is 1.5 to 2 times the outer diameter of the output pipeline.

11. The ignition chamber as described in any one of claims 1 to 5, the ignition chamber further comprising a heater and a heat insulation device, the heat insulation device and the heater forming a heating and heat preservation chamber, the chamber body being located within the heating and heat preservation chamber; and the heater being disposed at the connection between the fuel gas pipeline and the combustion gas pipeline and the chamber body, and the fuel gas pipeline, the combustion gas pipeline and the chamber body being partially located inside the heater.

12. A semiconductor manufacturing apparatus, comprising a process chamber and an ignition chamber as described in any one of claims 1 to 11, the ignition chamber being connected to the process chamber via the delivery line.

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