Substrate processing device and control method thereof

Abstract

The present invention relates to a substrate processing apparatus, comprising: a plurality of adsorption units for adsorbing and lifting the upper surface of the second substrate in order to separate the second substrate bonded to the first substrate; a negative pressure adjustment unit for independently controlling the negative pressure of the plurality of adsorption units; and a processor for forming a separation initiation point at which a crack begins on any side of the substrate bonding surface where the first substrate and the second substrate are bonded, and determining whether the substrate has been separated.

Description

Substrate processing device and control method thereof The present invention relates to a substrate processing apparatus for separating joined substrates into individual substrates isolated from each other and a control method thereof. Recently, semiconductor manufacturing processes have tended to increase the diameter and reduce the thickness of substrates such as wafers to improve productivity and reduce manufacturing costs. Large-diameter, thin-thick substrates may be warped or damaged during transportation or surface polishing. In order to prevent warping or damage of a large and thin substrate during transportation or polishing, a process of separating the carrier substrate from the device substrate at the bonding substrate may be performed after forming a bonding substrate bonding a carrier substrate to a device substrate and transporting or polishing the bonding substrate. A substrate processing apparatus for separating a carrier substrate from a device substrate includes a lifting unit for sucking and lifting the carrier substrate. However, there has been a problem in the past that the crack (fissure) extension is not constant after the separation starting point of the substrate is generated, and a constant peeling force cannot be confirmed despite adjusting a plurality of adsorption units. At this time, if the peeling force or peeling speed is not controlled, the carrier substrate or the device pattern may be damaged. Therefore, the magnitude and distribution of the adsorption force need to be finely adjusted during the process of separating the carrier substrate from the device substrate and lifting it. Background art of the present invention is disclosed in Korean Patent Publication No. 10-2014-0033327 (published on March 18, 2014, invention title: Method for Separating a Product Substrate from a Carrier Substrate). Technical problems solved In order to solve the above problems, the object of the present invention is to provide a substrate processing device and a control method thereof, which can adjust the adsorption force of multiple adsorption units that adsorb substrates respectively, thereby improving the yield and operation speed of the substrate separation operation. Technical Solution According to one aspect of the present invention, a substrate processing apparatus includes: a plurality of adsorption units for adsorbing and lifting the upper surface of a second substrate bonded to a first substrate in order to separate the second substrate; a negative pressure adjustment unit for independently controlling the negative pressures of the plurality of adsorption units; and a processor for forming a separation starting point where a crack begins on either side of a substrate bonding surface where the first substrate and the second substrate are bonded, and for determining whether the substrates are separated. In the present invention, the processor adjusts the negative pressure of each adsorption unit based on the distance from the separation starting point of the first and second substrates through the control of the negative pressure adjustment unit, so that the crack expands in a direction away from the separation starting point and separates the second substrate. In the present invention, the processor inserts a separation member on either side of the substrate bonding surface where the first substrate and the second substrate are bonded, thereby forming a separation starting point where cracks start. In the present invention, the processor uses laser light on either side of the substrate bonding surface where the first substrate and the second substrate are bonded, thereby forming a separation starting point where a crack begins. The present invention further includes: a plurality of displacement sensors respectively arranged between the plurality of adsorption units, and the processor determines whether the second substrate is separated at the corresponding position of the displacement sensor based on the height of the second substrate detected by the displacement sensor. In the present invention, it further includes: a force measuring element, which is arranged in the multiple adsorption units and detects the force applied to the entire lifting unit during lifting, and the processor performs substrate separation success judgment based on whether the force value measured by the force measuring element is within the error range of the set value of the force. In the present invention, it further includes: a plurality of force measuring elements, which are respectively provided at the plurality of adsorption units and individually detect the force applied to each adsorption unit, and when the value of the height at which the second substrate is separated and raised is measured to be lower than the set value of the specified height, the processor changes the force set value of the individual force measuring element provided at each adsorption unit to a value higher than the force set value in order to increase the negative pressure of each adsorption unit. According to other aspects of the present invention, a control method for a substrate processing device, in order to separate a second substrate bonded to a first substrate, includes: a step of adjusting the negative pressure of each adsorption unit based on the distance from a separation starting point of the first and second substrates, thereby causing a crack to extend in a direction away from the separation starting point; and a step of changing the force setting value of a separate force measuring element provided in each adsorption unit to a higher force setting value than the previous force setting value in order to increase the negative pressure of each adsorption unit and lift it higher when the value of the height of the second substrate lifted by each of the adsorption units is set to a set value lower than a specified height. In the present invention, in the step of extending the crack, the processor inserts a separation member on either side of the substrate bonding surface where the first substrate and the second substrate are bonded, thereby forming the separation starting point where the crack starts. In the present invention, in order to determine whether the measured value of the height of the second substrate is lower than a set value of a designated height, the processor measures the height of the second substrate by using a plurality of displacement sensors respectively disposed between the plurality of adsorption units. In the present invention, the processor determines whether the second substrate is separated at the position where the displacement sensor is located by comparing the value of the height of the second substrate measured with a set value of a designated height. In the present invention, in order to determine whether the second substrate bonded to the first substrate is completely separated, the processor further includes: a step of determining whether a force value measured by a force measuring element that measures the force of the lifting unit as a whole and is provided with the plurality of adsorption units is within an error range of a specified force setting value. In the present invention, when the force value measured by the force measuring element is within an error range of a specified force setting value, the processor finally determines whether the separation of the second substrate is successful. In the present invention, in the step of changing the force setting value of the individual force measuring element provided in each adsorption unit to a higher force setting value than the previous force setting value, the processor repeatedly changes the force setting value of the individual force measuring element a specified number of times. Effects of the Invention According to one aspect of the present invention, the present invention individually adjusts the adsorption forces of multiple adsorption units included in the lifting unit in accordance with the direction and speed of crack diffusion between the first substrate and the second substrate, thereby stably separating the first substrate and the second substrate, and improving the yield and operation speed of the substrate separation operation. An embodiment of a substrate processing apparatus and control method thereof according to the present invention is described below with reference to the accompanying drawings. For clarity and ease of explanation, the thickness of lines and dimensions of components shown in the drawings may be exaggerated. Furthermore, the terms described below are defined based on their functions within the present invention and may vary depending on the intentions or habits of the user or operator. Therefore, the definitions of these terms should be based on the entirety of this specification. FIG1 is a schematic diagram showing the general structure of a substrate processing apparatus according to a first embodiment of the present invention. FIG5 is a diagram showing an example of a method for separating a substrate by sequentially adjusting the suction forces of a plurality of suction units according to the progress of crack propagation in the substrate in FIG1. As shown in FIG. 1 , the substrate processing apparatus according to the first embodiment of the present invention includes a plurality of adsorption units 61 to 65 , displacement sensors 81 to 84 , a force measuring element 90 , a negative pressure adjustment unit 110 , a displacement measuring unit 120 , a force measuring unit 130 , and a processor 140 . 1 , a substrate processing apparatus according to a first embodiment of the present invention separates a second substrate (eg, carrier substrate) 42 adhered to (or bonded to) a first substrate (eg, device substrate) 41 . For example, the first substrate 41 may be a device substrate having fine circuits formed on a surface thereof and diced in semiconductor wafer units, and the second substrate 42 may be a carrier substrate that prevents the first substrate 41 from being warped or damaged. At this time, the planar shape of the second substrate 42 may be circular. The annular frame 10 surrounds the bonding substrate including the first substrate 41 and the second substrate 42 , and is an annular member that spaces the first substrate 41 and the second substrate 42 apart. The adhesive tape 20 adheres and supports the lower side of the first substrate 41 and the lower side of the ring frame 10. The adhesive tape 20 can be flexible and has a generally circular planar shape. The ring frame 10 is adhered to the outer periphery of the adhesive tape 20 so that the adhesive tape 20 does not wrinkle or crease. The bonding substrate of the substrate supporting unit 30 may be raised in a state of being fixed by adsorption. In this case, although not shown in the drawings, the height of the upper end of the bonding substrate may be higher than the height of the upper end of the annular frame 10. The separation component (kn1 in FIG. 5 ) may be inserted on one side of the bonding substrate, that is, from any side of the first substrate 41 and the second substrate 42 to the pasting unit 50 between the first substrate 41 and the second substrate 42 to form a crack (see FIG. 5 ). For example, the separating member kn1 may be a blade. The blade may be movable (extended) in the horizontal direction to the same height as the interface (or the pasting unit 50) between the first substrate 41 and the second substrate 42. The tip of the blade may be directed toward one side of the interface (or the pasting unit 50) between the first substrate 41 and the second substrate 42. In addition, the separating component kn1 may also use laser light instead of a blade. Displacement sensors 81 to 84 are formed between the plurality of adsorption units 61 to 65 and measure the planar position and height of the second substrate 42 adsorbed to each adsorption unit 61 to 65. At this time, as the second substrate 42 separates and rises upward, the distances t1 to t4 measured by the displacement sensors 81 to 84 become shorter. Therefore, if the distances t1 to t4 become shorter than the set values ​​T1 to T4, it means that the second substrate 42 is separated. The displacement measuring unit 120 collects measurement values ​​detected by each of the displacement sensors 81 to 84 . The force measuring unit 130 measures the force before the second substrate 42 is separated and the force after the second substrate 42 is separated through the force measuring element 90 . The force measuring element 90 detects (measures) the entire force F applied to the lifting unit 70 . For example, the force measuring element 90 can be used to measure the difference in force before and after the second substrate 42 is separated to confirm that the second substrate 42 has been separated. That is, the force measuring element 90 measures force (e.g., pulling force, pushing force) and outputs an electrical signal corresponding to the resistance value or the force value. The force measuring element 90 may include a load cell. The processor 140 determines the separation state of the second substrate 42 using the values ​​measured by the displacement measuring unit 120 and the force measuring element 90 . The processor 140 may form a separation starting point where a crack starts on any side of the substrate bonding surface where the first substrate 41 and the second substrate 42 are bonded, and may determine whether the substrates are separated. The lifting time, lifting height, lifting speed, etc. of the lifting unit 70 can be automatically controlled or controlled by an operator. The lifting unit 70 sucks and pulls up the second substrate 42 using the plurality of suction units 61 to 65 so that the second substrate 42 is separated and spaced apart from the first substrate 41 in a state where the bonded substrate is supported by the substrate supporting unit 30 . The lifting unit 70 is disposed on an upper side of the second substrate 42. The lifting unit 70 may include a plurality of adsorption units 61 to 65 and a horizontal frame 101. The lifting unit 70 may include a horizontal frame (not shown) for supporting the plurality of adsorption units 61 to 65. The horizontal frame (not shown) may lift the lifting unit 70 like a crane and move it in a horizontal direction, for example. Multiple adsorption units 61 to 65 adsorb and lift the second substrate 42 upward so as to separate the second substrate 42 from the first substrate 41 by expanding the crack between the first substrate 41 and the second substrate 42, and as shown in Figure 5, a separation part kn1 is used to insert into the pasting unit 50 between the first substrate 41 and the second substrate 42 from one side of the bonding substrate, that is, any side of the first substrate 41 and the second substrate 42 and gradually lift from the part where the crack is formed and expand (propagate) the crack to the opposite side. For example, as shown in FIG. 5 , it can be seen that the plurality of adsorption units 61 to 65 increase the adsorption force of each adsorption unit 61 to 65 in sequence (for example, the adsorption force is increased in sequence from the adsorption unit 61 at a short distance to the adsorption unit 65 at a long distance (see ① to ⑥ in FIG. 5 ) based on the distance between the first substrate 41 and the side of the second substrate 42 (i.e., the separation starting point) that the tip of the separation component kn1 first touches, so that the crack initially formed gradually expands (propagates) to the opposite side, and the second substrate 42 is stably and quickly separated. At this time, in this embodiment, five adsorption units 61 to 65 are exemplarily described, but the number of adsorption units is not limited to five, and it should be noted that in other embodiments, fewer or more (for example, 2 to 4 or 6 or more) adsorption units may be included. For reference, in the figures shown in Figures 1 and 3, each adsorption unit 61 to 65 is shown in cross-section and is not visible, but each adsorption unit 61 to 65 can be composed of a different number of suction cup pads depending on the shape of the substrate (e.g., circular) (see Figure 6 shown in a three-dimensional form). Assume that, as shown in FIG6 , the first adsorption unit 61 and the fifth adsorption unit 65 formed at the edge of the substrate can be respectively composed of three adsorption pads, the second adsorption unit 62 and the fourth adsorption unit 64 can be respectively composed of four adsorption pads, and the third suction cup portion 63 formed at the center of the substrate can be composed of five suction cups. However, the number of adsorption pads constituting each of the adsorption units 61 to 65 shown in FIG. 6 is for explaining that the number of adsorption pads is variable according to the shape of the substrate (ie, according to the position of each adsorption unit on the substrate). At this time, each adsorption pad constituting each adsorption unit 61 to 65 is formed in the same shape, and with reference to an adsorption pad constituting the first adsorption unit 61, includes a connecting unit 61a at the upper end, an adsorption plate 61c at the lower end, and a bellows 61b between the connecting unit 61a and the adsorption plate 61c, and an intake air flow path (not shown) through which air can flow can be formed inside. The connection unit 61a may be coupled to the lower end of the channel beam (not shown) of the lifting unit 70, and the adsorption plate 61c may make surface contact with the upper surface of the second substrate 42. The bellows 61b may include a plurality of corrugations 61b' arranged in the up-down direction. The bellows 61 b ​​may be elastically biased in a direction in which gaps between the plurality of corrugations 61 b ​​′ are narrowed. Therefore, the length of the first adsorption unit 61 in the up-down direction can be elastically deformed. In other words, when a force is applied to the first adsorption unit 61 so that the connection unit 61a and the adsorption plate 61c move apart, the bellows 61b is elastically deformed, thereby increasing the gaps between the plurality of pleats 61b' and extending the length of the first adsorption unit 61. In this state, when the force applied to the first adsorption unit 61 is removed, the bellows 61b elastically recovers, thereby narrowing the gaps between the plurality of pleats 61b' and shrinking the length of the first adsorption unit 61 to its original length. The negative pressure adjusting unit 110 adjusts the negative pressure distributed to the plurality of adsorption units 61 to 65 , and to this end, forms negative pressure flow paths to individually allow air to flow. For example, the negative pressure adjustment unit 110 can control the negative pressure of each adsorption unit 61 to 65 by using the negative pressure generated by a vacuum pump (not shown). Assume that the negative pressure can be gradually increased in response to the direction and speed of crack expansion (propagation) from the first adsorption unit 61 where the crack first starts to the last adsorption unit 65. Next, a method of separating a bonded substrate using the substrate processing apparatus according to the first embodiment of the present invention will be described. FIG. 2 is a flowchart illustrating a method for controlling a substrate processing apparatus according to a first embodiment of the present invention. 2 , when a bonding substrate (i.e., a substrate in which a first substrate 41 and a second substrate 42 are adhered to each other) is inserted into the substrate processing apparatus (step S101), the processor 140 adsorbs and fixes the first substrate 41 of the bonding substrate through the substrate supporting unit 30 (step S102), and the substrate supporting unit 30 rises to a designated position (step S103), and the lifting unit 70 descends to a designated position (step S104). Here, the designated position of the substrate supporting unit 30 is a position where the end of the separating part kn1 is at the same height as the boundary region of the first and second substrates 41 and 42 (ie, the pasting unit 50 ) and is higher than the annular frame 10 . Furthermore, the designated position of the lifting unit 70 is a position where the plurality of adsorption units 61 to 65 can come into contact with the upper surface of the second substrate 42 when extended. When the lifting unit 70 descends to the specified position and the adsorption units 61 to 65 contact the second substrate 42 (step S105), the processor 140 adsorbs the first adsorption unit 61 located closest to the position where the crack is to start (i.e., the separation starting point) on the second substrate 42 (step S106), and inserts the separation part kn1 to a specified depth (for example, 1 mm to 5 mm) at the position where the crack is to start (i.e., the specified side of the first substrate 41 and the second substrate 42) to generate a crack (crack) (see Figure 5-1) (step S107). At this time, the adsorption force of the first adsorption unit 61 may be adjusted to a preset value (eg, 20% to 100%). When a crack (crack) is generated at the position where the crack is to start (i.e., the separation starting point), the processor 140 additionally adsorbs the next sequential adsorption unit (i.e., the second adsorption unit 62) corresponding to the direction in which the crack is to propagate to the second substrate 42, and adjusts the adsorption forces of the first adsorption unit 61 and the second adsorption unit 62 to preset values ​​(e.g., 20% to 100%), respectively (step S108). That is, the adsorption forces of the first adsorption units 61 to 65 may be continuously adjusted (eg, 20% to 100%), respectively, corresponding to the degree of separation of the second substrate 42 . Furthermore, if the distance t1 of the second substrate 42 measured by the first displacement sensor 81 within the set time is closer than the set value T1, it is determined that the second substrate 42 is successfully separated at the corresponding position, and if the distance t1 of the second substrate 42 measured by the first displacement sensor 81 within the set time is not close to the set value T1, the adsorption force of the first adsorption unit 61 and the second adsorption unit 62 is repeatedly adjusted (steps S108 to S109). Even if the adsorption forces of the first adsorption unit 61 and the second adsorption unit 62 are repeatedly adjusted according to the designated repetition number setting, if the substrate separation fails, the substrate separation process is stopped, and if successful, the next step is performed. If the substrate separation process of the first adsorption unit 61 and the second adsorption unit 62 is successful (for example, step S109), the processor 140 additionally adsorbs the next sequential adsorption unit (i.e., the third adsorption unit 63) corresponding to the direction in which the crack is to propagate onto the second substrate 42, and adjusts the adsorption forces of the first to third adsorption units 61 to 63 by preset values ​​(for example, 20% to 100%), respectively (step S110). That is, the adsorption forces of the first to third adsorption units 61 to 63 may be continuously adjusted (eg, 20% to 100%), respectively, in response to the degree of separation of the second substrate 42 . Furthermore, if the distance t2 of the second substrate 42 measured by the second displacement sensor 82 within the set time is closer than the set value T2, it is determined that the second substrate 42 is successfully separated at the corresponding position, and if the distance t2 of the second substrate 42 measured by the second displacement sensor 82 within the set time is not close to the set value T2, the adsorption force of the first to third adsorption units 61 to 63 is repeatedly adjusted (steps S110 to S111). Even if the adsorption forces of the first to third adsorption units 61 to 63 are repeatedly adjusted according to the designated repetition number setting, if substrate separation fails, the substrate separation process is stopped, and if successful, the next step is performed. If the substrate separation process of the first to third adsorption units 61 to 63 is successful (for example, step S111), the processor 140 additionally adsorbs the next sequential adsorption unit (i.e., the fourth adsorption unit 64) corresponding to the direction in which the crack is to propagate onto the second substrate 42, and adjusts the adsorption forces of the first to fourth adsorption units 61 to 64 by preset values ​​(for example, 20% to 100%), respectively (step S112). That is, the adsorption forces of the first to fourth adsorption units 61 to 64 may be continuously adjusted (eg, 20% to 100%), respectively, in response to the degree of separation of the second substrate 42 . Furthermore, if the distance t3 of the second substrate 42 measured by the third displacement sensor 83 within the set time is closer than the set value T3, it is determined that the second substrate 42 is successfully separated at the corresponding position, and if the distance t3 of the second substrate 42 measured by the third displacement sensor 83 within the set time is not close to the set value T3, the adsorption force of the first to fourth adsorption units 61 to 64 is repeatedly adjusted (steps S112 to S113). Even if the adsorption forces of the first to fourth adsorption units 61 to 64 are repeatedly adjusted according to the designated repetition number setting, if substrate separation fails, the substrate separation process is stopped, and if successful, the next step is performed. If the substrate separation process of the first to fourth adsorption units 61 to 64 is successful (for example, step S113), the processor 140 additionally adsorbs the next sequential adsorption unit (i.e., the fifth adsorption unit 65) corresponding to the direction in which the crack is to propagate onto the second substrate 42, and adjusts the adsorption forces of the first to fifth adsorption units 61 to 65 by preset values ​​(e.g., 20% to 100%), respectively (step S114). That is, the adsorption forces of the first to fifth adsorption units 61 to 65 may be continuously adjusted (eg, 20% to 100%), respectively, in response to the degree of separation of the second substrate 42 . Furthermore, if the distance t4 of the second substrate 42 measured by the fourth displacement sensor 84 within the set time is closer than the set value T4, it is determined that the second substrate 42 is successfully separated at the corresponding position, and if the distance t4 of the second substrate 42 measured by the fourth displacement sensor 84 within the set time is not close to the set value T4, the adsorption force of the first to fifth adsorption units 61 to 65 is repeatedly adjusted (steps S114 to S115). At this time, if the substrate separation process of the first to fifth adsorption units 61 to 65 is successful (for example, step S115), the processor 140 finally makes a debonding judgment (i.e., a judgment that the substrate separation is successful) when the value F measured by the force measuring element 90 that measures the force F applied to the lifting unit 70 as a whole is within the error range of the specified set value TF (for example, 0±10N) (yes in step S116). That is, since the force measuring element 90 does not have a displacement sensor after the last adsorption unit (ie, the fifth adsorption unit 65 ), it ultimately serves to confirm whether the second substrate 42 is completely separated instead of the displacement sensor. Although not shown in the drawings, if the value F measured by the force measuring element 90 does not fall within the error range of the specified set value TF (eg, 0±10 N), the adsorption force of at least one of the first to fifth adsorption units 61 to 65 is repeatedly adjusted. However, even if the adsorption forces of the first to fifth adsorption units 61 to 65 are repeatedly adjusted according to the designated repetition number setting, if substrate separation fails (No at step S116 ), the substrate separation process is stopped, and if successful, the next step is performed. At this time, the adjustment repetition of adjusting the adsorption force can be adjusted. When a debonding determination is finally made (ie, a successful board separation determination) (Yes in step S116), the processor 140 raises the lifting unit 70 (step S116) and removes the first substrate 41 and the second substrate (42) (step S117). For reference, in this embodiment, five adsorption units 61 to 65 are exemplarily described, but the number of adsorption units is not limited to five, and it should be noted that in other embodiments, fewer or more (for example, 2 to 4 or 6 or more) adsorption units may be included. At the same time, in the first embodiment described with reference to Figures 1 and 2, as a method of checking whether the second substrate 42 is separated by using displacement sensors 81 to 84 arranged between multiple adsorption units 61 to 65, the displacement sensor is structurally arranged next to the last adsorption unit (i.e., the fifth adsorption unit 65), so the force measuring element 90 is used instead of the displacement sensor to finally confirm whether the second substrate 42 is completely separated. FIG. 3 is a schematic diagram showing a schematic structure of a substrate processing apparatus according to a second embodiment of the present invention. As shown in FIG3 , the substrate processing apparatus according to the second embodiment of the present invention includes a plurality of adsorption units 61 to 65 , displacement sensors 81 to 84 , force measuring elements 90 to 95 , and a negative pressure device, an adjustment unit 110 , a displacement measuring unit 120 , a force measuring unit 130 , and a processor 140 . 3 , the substrate processing apparatus according to the second embodiment of the present invention is the same as the substrate processing apparatus according to the first embodiment, and separates the second substrate (eg, carrier substrate) 42 adhered (or bonded) to the first substrate (eg, device substrate) 41 . However, the substrate processing apparatus according to the second embodiment of the present invention shown in FIG3 differs from the force measuring element 90 described in the first embodiment in that separate force measuring elements 91 to 95 are additionally provided in the plurality of adsorption units 61 to 65 . Accordingly, the force measuring unit 130 measures the force before and after separation of the second substrate 42 at each position adsorbed by the plurality of adsorption units 61 to 65 through the overall force measuring element 90 and the individual force measuring elements 91 to 95 . The force measuring elements 91 to 95 measure force (eg, pulling force, pushing force) and output an electrical signal corresponding to the resistance value or the force value. It is assumed that the force measuring elements 91 to 95 may include load cells. The processor 140 may determine the separation state of the second substrate 42 more accurately using the values ​​measured by the displacement measuring unit 120 , the overall force measuring element 90 , and the individual force measuring elements 91 to 95 . Meanwhile, in this embodiment, in order to facilitate understanding of the components 110 to 1140 , each operation is described separately, but it should be noted that according to the embodiment, they can be integrated into the processor 140 for implementation. Hereinafter, descriptions of constituent elements (eg, negative pressure adjustment unit, displacement measurement unit) that overlap with those of the first embodiment will be omitted for convenience of explanation. Hereinafter, a method for separating a bonded substrate using a substrate processing apparatus according to a second embodiment of the present invention will be described. FIG. 4 is a flowchart illustrating a method for controlling a substrate processing apparatus according to a second embodiment of the present invention. 4 , when a bonding substrate (i.e., a substrate in which a first substrate 41 and a second substrate 42 are adhered to each other) is inserted into the substrate processing apparatus (step S201), the processor 140 adsorbs and fixes the first substrate 41 of the bonding substrate through the substrate supporting unit 30 (step S202), and the substrate supporting unit 30 rises to a designated position (step S203), and the lifting unit 70 descends to a designated position (step S204). Here, the designated position of the substrate support unit 30 is a position where the end of the separating member kn1 is at the same height as the boundary region between the first substrate 41 and the second substrate 42 (i.e., the pasting unit 50), while being higher than the annular frame 10. Furthermore, the designated position of the lifting unit 70 is a position where the plurality of suction units 61 to 65 can contact the upper surface of the second substrate 42 when extended. When the lifting unit 70 descends to the specified position and the adsorption units 61 to 65 contact the second substrate 42 (step S205), the processor 140 adjusts the negative pressure (adsorption force) of the first adsorption unit 61 located closest to the position where the crack is to start (i.e., the separation starting point) to match the force value set on the first force measuring element 91 and adsorbs it on the second substrate 42 (step S206), and inserts the separation component kn1 to a specified depth (for example, 1 mm to 5 mm) at the position where the crack is to start (i.e., a specified side of the first and second substrates 41 and 42) to generate a crack (crack) (see Figure 5-1) (step S207). At this time, the negative pressure (adsorption force) of the first adsorption unit 61 is initially adjusted to match the value of the force set in the first force measuring element 91 (step S208 ). Thereafter, when a crack (crack) is generated at the position where the crack is to start (i.e., the separation starting point), the crack is propagated by the adsorption force of the first adsorption unit 61. Accordingly, if the distance t1 of the second substrate 42 measured by the first displacement sensor 81 is closer than the set value T1 within the set time (Yes in step S209), the processor 140 determines that the second substrate 42 is successfully separated at the corresponding position, and if the distance t1 of the second substrate 42 measured by the first displacement sensor 81 does not approach the set value T1 within the set time (No in step S209), the set value of the first force measuring element 91 is repeatedly changed (for example, the set value is changed to a higher value) (steps S208 to S209). That is, when the setting value of the first force measuring element 91 is changed to be higher, the processor 140 increases the negative pressure (adsorption force) of the first adsorption unit 61 . At the same time, when the distance t1 of the second substrate 42 measured by the first displacement sensor 81 within the set time is closer than the set value T1 (yes in step S209), the processor 140, after maintaining the negative pressure (adsorption force) of the first adsorption unit 61, additionally adsorbs the next-order adsorption unit (i.e., the second adsorption unit 62) corresponding to the direction in which the crack is to propagate to the second substrate 42, and the adsorption force of the second adsorption unit 62 is matched and adjusted to the force value set in the second force measuring element 92 so as to be adsorbed to the second substrate 42 (step S210). At this time, the negative pressure (adsorption force) of the second adsorption unit 62 is initially adjusted to match the value of the force set in the second force measuring element 91 (step S210 ). Thereafter, the crack is propagated by the adsorption force of the second adsorption unit 62. Accordingly, if the distance t2 of the second substrate 42 measured by the second displacement sensor 82 is closer than the set value T2 within the set time (Yes in step S211), the processor 140 determines that the second substrate 42 is successfully separated at the corresponding position, and if the distance t2 of the second substrate 42 measured by the second displacement sensor 82 does not approach the set value T2 within the set time (No in step S211), the set value of the second force measuring element 92 is repeatedly changed (for example, the set value is changed to a higher value) (steps S210 to S211). That is, when the setting value of the second force measuring element 92 is changed to be higher, the processor 140 increases the negative pressure (adsorption force) of the second adsorption unit 62 . At the same time, when the distance t2 of the second substrate 42 measured by the second displacement sensor 82 within the set time is closer than the set value T2 (yes in step S211), the processor 140, after maintaining the negative pressure (adsorption force) of the second adsorption unit 62, additionally adsorbs the next-order adsorption unit (i.e., the third adsorption unit 63) corresponding to the direction in which the crack is to propagate to the second substrate 42, and the adsorption force of the third adsorption unit 63 is matched and adjusted to the force value set in the third force measuring element 93 so as to be adsorbed to the second substrate 42 (step S212). At this time, the negative pressure (adsorption force) of the third adsorption unit 63 is initially adjusted to match the value of the force set in the third force measuring element 93 (step S212 ). Thereafter, the crack is propagated by the adsorption force of the third adsorption unit 63. Accordingly, if the distance t3 of the second substrate 42 measured by the third displacement sensor 83 is closer than the set value T3 within the set time (Yes in step S213), the processor 140 determines that the second substrate 42 is successfully separated at the corresponding position, and if the distance t3 of the second substrate 42 measured by the third displacement sensor 83 does not approach the set value T3 within the set time (No in step S213), the set value of the third force measuring element 93 is repeatedly changed (for example, the set value is changed to a higher value) (steps S212 to S213). That is, when the setting value of the third force measuring element 93 is changed to be higher, the processor 140 increases the negative pressure (adsorption force) of the third adsorption unit 63 . At the same time, when the distance t3 of the second substrate 42 measured by the third displacement sensor 83 within the set time is closer than the set value T3 (yes in step S213), the processor 140, after maintaining the negative pressure (adsorption force) of the third adsorption unit 63, additionally adsorbs the next-order adsorption unit (i.e., the fourth adsorption unit 64) corresponding to the direction in which the crack is to propagate to the second substrate 42, and the adsorption force of the fourth adsorption unit 64 is matched and adjusted to the force value set in the fourth force measuring element 94 to be adsorbed to the second substrate 42 (step S214). At this time, the negative pressure (adsorption force) of the fourth adsorption unit 64 is initially adjusted to match the value of the force set in the fourth force measuring element 94 (step S214 ). Thereafter, the crack is propagated by the adsorption force of the fourth adsorption unit 64. Accordingly, if the distance t4 of the second substrate 42 measured by the fourth displacement sensor 84 is closer than the set value T4 within the set time (Yes in step S215), the processor 140 determines that the second substrate 42 is successfully separated at the corresponding position, and if the distance t4 of the second substrate 42 measured by the fourth displacement sensor 84 does not approach the set value T4 within the set time (No in step S215), the processor 140 repeatedly continues to change the set value of the fourth force measuring element 94 (for example, changing the set value to a higher value) (steps S214 to S215). That is, when the setting value of the fourth force measuring element 94 is changed to be higher, the processor 140 increases the negative pressure (adsorption force) of the fourth adsorption unit 64 . At the same time, when the distance t4 of the second substrate 42 measured by the fourth displacement sensor 84 within the set time is closer than the set value T4 (yes in step S215), the processor 140, after maintaining the negative pressure (adsorption force) of the fourth adsorption unit 64, additionally adsorbs the next-order adsorption unit (i.e., the fifth adsorption unit 65) corresponding to the direction in which the crack is to propagate to the second substrate 42, and the adsorption force of the fifth adsorption unit 65 is matched and adjusted to the value of the force set on the fifth force measuring element 95 so as to be adsorbed to the second substrate 42 (step S216). At this time, the negative pressure (adsorption force) of the fifth adsorption unit 65 is initially adjusted to match the value of the force set in the fifth force measuring element 95 (step S216 ). Afterwards, the crack propagates through the adsorption force of the fifth adsorption unit 65, and since there is no displacement sensor after the last adsorption unit (i.e., the fifth adsorption unit 65), the processor 140 maintains the negative pressure (adsorption force) of the fifth adsorption unit 65 according to the force value set in the force measuring element 95. Then, when the value F measured by the force measuring element 90 that measures the force F applied to the lifting unit 70 as a whole is within the error range of the specified set value TF (e.g., 0±10N) (yes in step S217), the processor 140 finally makes a debonding judgment (i.e., a judgment that the substrate separation is successful). That is, the force measuring element 90 replaces the displacement sensor and ultimately plays the role of confirming whether the second substrate 42 is completely separated. Although not shown in the figure, if the value F measured by the force measuring element 90 does not fall within the error range of the specified set value TF (for example, 0±10N), the set value of the fifth force measuring element 95 is repeatedly adjusted (for example, the set value is changed to a higher value) (steps S216-S217). That is, when the setting value of the fifth force measuring element 95 is changed to be higher, the processor 140 increases the negative pressure (adsorption force) of the fifth adsorption unit 65 . However, even if the set value of the fifth force measuring element 95 is changed according to the designated number of repetitions and the adsorption force of the fifth adsorption unit 65 is repeatedly adjusted, if substrate separation fails, the substrate separation process is stopped, and if successful, the next step is performed. At this time, the number of repetitions of adjusting the adsorption force can be adjusted. When the debonding determination is finally made (ie, the board separation is successful determination), the processor 140 raises the lifting unit 70 (step S218) and removes the first substrate 41 and the second substrate (42) (step S219). For reference, in this embodiment, five adsorption units 61 to 65 are exemplarily described, but the number of adsorption units is not limited to five, and it should be noted that in other embodiments, fewer or more (for example, 2 to 4 or 6 or more) adsorption units may be included. As described above, the present invention individually adjusts the adsorption force of multiple adsorption units included in the lifting unit according to the direction and speed of the crack extending between the first substrate and the second substrate, thereby having the effect of stably separating the first substrate and the second substrate and improving the yield and operation speed of the substrate separation operation. Although the present invention has been described with reference to the embodiments shown in the accompanying drawings, these are merely exemplary and a person of ordinary skill in the art to which this invention pertains should understand that various modifications and equivalent other embodiments may be made therefrom. Therefore, the scope of technical protection of the present invention should be determined by the scope of the appended patent applications. In addition, the implementations described in this specification may be implemented as, for example, methods or processes, devices, software programs, data streams or signals. Even if discussed only in the context of a single implementation form (for example, discussed only as a method), the implementation of the features discussed may also be implemented in other forms (for example, as a device or program). The device may be implemented using appropriate hardware, software, firmware, etc. The method may be implemented in a device such as a processor, which generally refers to a processing device including, for example, a computer, a microprocessor, an integrated circuit or a programmable logic device. The processor further includes communication devices that facilitate information exchange between end users, such as computers, mobile phones, personal digital assistants (PDAs) and other devices. 10: Ring frame 110: Negative pressure adjustment unit 120: Displacement measurement unit 130: Force measurement unit 140: Processor 20: Adhesive tape 30: Substrate support unit 41: First substrate 42: Second substrate 50: Pasting unit 61, 62, 63, 64, 65: Adsorption unit 61a: Connection unit 61b: Bellows 61b': Fold 61c: Adsorption plate 70: Lifting unit 81, 82, 83, 84: Displacement sensor 90, 91, 92, 93, 94, 95: Force measurement element S101~S119, S201~S219: Steps T, T1, T2, T3, T4, TF: Set values ​​t1, t2, t3, t4: Distance kn1: Separation component FIG. 1 is a schematic diagram showing a schematic structure of a substrate processing apparatus according to a first embodiment of the present invention. FIG. 2 is a flowchart illustrating a method for controlling a substrate processing apparatus according to a first embodiment of the present invention. FIG. 3 is a schematic diagram showing a schematic structure of a substrate processing apparatus according to a second embodiment of the present invention. FIG. 4 is a flowchart illustrating a method for controlling a substrate processing apparatus according to a second embodiment of the present invention. FIG. 5 is a diagram illustrating an example of a method for separating the substrate by adjusting the suction forces of the plurality of suction units according to the progress of crack propagation in the substrate in FIG. 1 . FIG. 6 is a diagram showing an example in which the number of adsorption pads constituting each adsorption unit in FIG. 1 or FIG. 3 is variable depending on the position of the adsorption unit on the substrate. 10: Ring frame 110: Negative pressure adjustment unit 120: Displacement measurement unit 130: Force measuring unit 140: Processor 20: tape 30: Substrate support unit 41: first substrate 42: Second substrate 50: Paste unit 61,62,63,64,65: Adsorption unit 70: Lifting unit 81,82,83,84: Displacement sensor 90,91,92,93,94,95: Force measuring elements

Claims

1. A substrate processing apparatus, comprising: Multiple adsorption units adsorb and lift the upper surface of the second substrate in order to separate the second substrate bonded to the first substrate; A negative pressure adjustment unit independently controls the negative pressure of the plurality of adsorption units; a processor forms a separation initiation point where a crack begins on either side of the substrate bonding surface where the first substrate and the second substrate are bonded, and determines whether the substrates have been separated; and a plurality of individual force measuring elements are respectively disposed in the plurality of adsorption units and individually detect the force applied to each adsorption unit; wherein when the processor measures that the height to which the second substrate has been separated and raised is lower than a set value of a specified height, the processor changes the set value of the force of the individual force measuring element disposed in each adsorption unit to a higher value than the previous set value in order to increase the negative pressure of each adsorption unit.

2. The substrate processing apparatus as claimed in claim 1, wherein, By controlling the negative pressure adjustment unit, the processor adjusts the negative pressure of each adsorption unit based on the distance from the separation initiation point of the first substrate and the second substrate, thereby causing the crack to propagate in a direction away from the separation initiation point and separate the second substrate.

3. The substrate processing apparatus as claimed in claim 1, wherein, The processor inserts a separation component on either side of the substrate bonding surface where the first and second substrates are bonded, thereby forming a separation initiation point where the crack begins.

4. The substrate processing apparatus as claimed in claim 1, wherein, The processor uses laser light on either side of the substrate bonding surface where the first and second substrates are bonded to form a separation initiation point for the crack to begin.

5. The substrate processing apparatus as claimed in claim 1, further comprising: Multiple displacement sensors are respectively disposed between the multiple adsorption units. The processor determines whether the second substrate is separated at the corresponding position of the displacement sensor based on the height of the second substrate detected by the displacement sensor.

6. The substrate processing apparatus as claimed in claim 1, further comprising: An overall force measuring element is installed in the plurality of adsorption units and detects the force applied to the entire lifting unit. The processor determines whether the substrate separation is successful based on whether the force value measured by the overall force measuring element is within the error range of the set force value.

7. The substrate processing apparatus as claimed in claim 1, wherein, When the force setting of the individual force measuring element in each adsorption unit is changed to a higher value than the previous force setting, the processor repeats the change of the force setting of the individual force measuring element a specified number of times.

8. A control method for a substrate processing apparatus, wherein, In order to separate the second substrate bonded to the first substrate, the control method is executed by a processor, including: adjusting the negative pressure of each adsorption unit based on the distance from the separation initiation point of the first substrate and the second substrate, thereby causing the crack to propagate in a direction away from the separation initiation point; and when the value of the height of the second substrate lifted by each adsorption unit is set to a value lower than a specified height, the processor changes the force setting value of the individual force measuring element set in each adsorption unit to a higher value than the previous force setting value in order to increase the negative pressure of each adsorption unit and lift it higher.

9. A control method for a substrate processing apparatus as described in claim 8, wherein, In the step of expanding the crack, the processor inserts a separation component on either side of the substrate bonding surface where the first substrate and the second substrate are joined, thereby forming the separation initiation point where the crack begins.

10. A control method for a substrate processing apparatus as described in claim 8, wherein, In order to determine whether the measured height of the second substrate is lower than the set value of the specified height, the processor measures the height of the second substrate by means of multiple displacement sensors respectively disposed between the plurality of adsorption units.

11. The control method of the substrate processing apparatus as described in claim 10, wherein, By comparing the measured height of the second substrate with a set value for a specified height, the processor determines whether the second substrate has been separated at the location of the displacement sensor.

12. The control method of the substrate processing apparatus as described in claim 8, wherein, In order to determine whether the second substrate bonded to the first substrate is completely separated, the processor further includes a step of determining whether the value of the force measured by an overall force measuring element that measures the force applied to the entire lifting unit having the plurality of adsorption units is within the error range of a specified force setting value.

13. A control method for a substrate processing apparatus as described in claim 12, wherein, When the force value measured by the overall force measuring element is within the error range of the specified force setting value, the processor finally executes the separation success determination of the second substrate.

14. The control method of the substrate processing apparatus as described in claim 8, wherein, In the step of changing the force setting of the individual force measuring element in each adsorption unit to a higher value than the previous force setting, the processor repeats the change of the force setting of the individual force measuring element a specified number of times.

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