Semiconductor photoresist compositions and methods of forming patterns using the composition

Abstract

A semiconductor photoresist composition and a method for forming patterns using the semiconductor photoresist composition are provided. The semiconductor photoresist composition includes a Sn-containing organometallic compound, a carboxylic acid compound containing at least one aryl group and an unsaturated bond, and a solvent.

Description

Semiconductor photoresist composition and method for forming patterns using the composition One or more embodiments of this disclosure relate to semiconductor photoresist compositions and methods for forming patterns using the semiconductor photoresist compositions. Cross-Reference to Related Applications This application claims priority and benefit to Korean Patent Application No. 10-2024-0027418, filed with the Korean Intellectual Property Office on February 26, 2024, the entire contents of which are incorporated herein by reference. Extreme ultraviolet (EUV) lithography has attracted widespread attention as a fundamental technology for manufacturing next-generation semiconductor devices. In other words, EUV lithography is considered a key technology for the production of next-generation semiconductor devices. EUV lithography is a patterning technique that uses EUV rays with a wavelength of 13.5 nanometers as the exposure source. According to EUV lithography, extremely fine patterns (e.g., less than or equal to 20 nanometers) can be formed during the exposure process in the manufacturing of semiconductor devices (e.g., semiconductor wafers). Extreme ultraviolet (EUV) lithography is achieved by developing compatible photoresists that can be used at spatial resolutions of 16 nanometers or less. Currently, efforts are underway to improve the specifications of chemically amplified (CA) photoresists, which are insufficient for next-generation devices in terms of resolution, photosensitivity, and feature roughness (also known as line edge roughness or LER). The inherent image blurring caused by acid-catalyzed reactions in these polymer types or varieties of photoresists limits the resolution of small feature sizes, a situation that has long existed in electron beam (e-beam) lithography. Chemically amplified (CA) photoresists are designed for high sensitivity, but their sensitivity may be reduced due to their typically lower elemental composition, which reduces light absorption at a wavelength of 13.5 nanometers. Furthermore, CA photoresists may face additional challenges under EUV exposure. Furthermore, CA photoresist may encounter difficulties at small feature sizes due to roughness issues, and the line edge roughness (LER) of CA photoresist may increase in experiments because the photosensitivity may be partially reduced due to the nature of the acid catalytic process. Therefore, due to these defects and problems of CA photoresist, the semiconductor industry needs or demands a new type of high-performance photoresist. To overcome the shortcomings of the aforementioned chemically amplified (CA) organic photosensitive compositions, inorganic photosensitive compositions were investigated. Inorganic photosensitive compositions are mainly or predominantly used for negative tone patterning, exhibiting resistance to developer composition removal due to chemical modification via non-chemical amplification mechanisms. Inorganic compositions contain inorganic elements with higher EUV absorbance than hydrocarbon groups, thus ensuring sensitivity through non-chemical amplification mechanisms, and may be less sensitive to stochastic effects, potentially resulting in lower line edge roughness and fewer defects. Tungsten-based peroxypolyacids mixed with tungsten, niobium, titanium and / or tantalum have been reported as radiation-sensitive materials for patterning. These materials are effective for large-pitch patterning of bilayer configurations in far-ultraviolet (deep ultraviolet), X-ray, and electron beam light sources. When using cationic hafnium metal oxide sulfate (HfSO₄) x Improved performance was achieved when the material, together with a peroxy miscible reagent, was imaged using projection EUV exposure at a 15 nm half-pitch (HP) distance. This system exhibited high performance for non-CA photoresist and achieved practical photosensitivity close to EUV photoresist requirements. However, hafnium metal oxide sulfate materials with peroxy miscible reagents have some practical drawbacks. First, these materials are coated in a corrosive sulfuric acid / hydrogen peroxide mixture and exhibit insufficient shelf-life stability. Second, modifying the material structure as a composite mixture to improve performance is challenging. Third, development must be carried out in a very high concentration of 25 wt% tetramethylammonium hydroxide (TMAH) solution and / or similar solutions. To address these issues, research has focused on developing tin-containing molecules that exhibit excellent or adequate absorption of extreme ultraviolet light. For organotin polymers within these tin-containing molecules, alkyl ligands dissociate through light absorption or the generation of secondary electrons. The dissociated alkyl ligands then crosslink with adjacent chains via oxygen bonds, thereby achieving negative hue patterning that cannot be removed by organic developers. While these organotin polymers demonstrate significantly improved sensitivity while maintaining resolution and line edge roughness, further improvements in patterning properties are needed for commercial availability. One or more aspects of embodiments of this disclosure relate to semiconductor photoresist compositions having excellent or suitable sensitivity, line edge roughness (LER), and resolution characteristics. One or more aspects of embodiments of this disclosure relate to a method of forming a pattern using the semiconductor photoresist composition. Other aspects will be set forth in part in the description which follows, and in part will be obvious from the description or may be learned by practicing the embodiments presented in this disclosure. According to one or more embodiments, the semiconductor photoresist composition includes a Sn-containing organometallic compound, a carboxylic acid compound containing at least one aryl group and an unsaturated bond, and a solvent. According to one or more embodiments, the method of forming a pattern includes forming an etch target layer (e.g., an etch target layer) on a substrate, coating a semiconductor photoresist composition on the etch target layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and using the photoresist pattern as an etch mask to etch the etch target layer. The semiconductor photoresist composition according to one or more embodiments can achieve excellent or appropriate sensitivity and excellent or appropriate LER characteristics. This disclosure can be modified in many alternative forms, and therefore specific embodiments will be exemplified and described in more detail in the accompanying drawings. However, it should be understood that this disclosure is not intended to be limited to the particular forms disclosed, but rather to cover all modifications, equivalents, and alternatives falling within the spirit and scope of this disclosure. Hereinafter, exemplary embodiments will be described in more detail with reference to the accompanying drawings. In the following description of this disclosure, established functions or structures will not be described for the sake of brevity. For clarity of this disclosure, unnecessary descriptions and relationships have been omitted, and throughout the disclosure, identical or similar configuration elements are specified by the same reference numerals. Furthermore, since the dimensions and thicknesses of each configuration shown in the accompanying drawings are illustrated for better understanding and ease of description, this disclosure is not necessarily limited thereto. In the accompanying drawings, the thickness of layers, films, panels, regions, and / or the like may be magnified for clarity. The thickness of portions of layers or regions and / or the like may be exaggerated for clarity. It should be understood that if (for example, when) an element such as a layer, film, region, or substrate is referred to as "on" another element, it may be directly on the other element, or there may be intervening elements in between. Conversely, when an element is referred to as "directly on" another element, there are no intervening elements in between. As used herein, "substituted" refers to hydrogen replaced by deuterium, halogen, hydroxyl, carboxyl, thiol, cyano, nitro, -NRR' (where R and R' can each independently be hydrogen, substituted or unsubstituted C1 to C30 saturated or unsaturated aliphatic hydrocarbon group, substituted or unsubstituted C3 to C30 saturated or unsaturated alicyclic hydrocarbon group, or substituted or unsubstituted C6 to C30 aromatic hydrocarbon group), -SiRR'R" (where R, R', and R" can each independently be hydrogen, substituted, or substituted with deuterium, halogen, hydroxyl, carboxyl, thiol, cyano, nitro, -NRR' (where R, R', and R" can each independently be hydrogen, substituted or unsubstituted C6 to C30 aromatic hydrocarbon group), or -SiRR'R" (where R, R', and R" can each independently be hydrogen, substituted or unsubstituted C6 to C30 aromatic hydrocarbon group). The substituent is a C1 to C30 saturated or unsaturated aliphatic hydrocarbon group (substituted or unsubstituted), a C3 to C30 saturated or unsaturated alicyclic hydrocarbon group (substituted or unsubstituted), a C6 to C30 aromatic hydrocarbon group (substituted or unsubstituted), a C1 to C30 alkyl group, a C1 to C10 haloalkyl group, a C1 to C10 alkylsilyl group, a C3 to C30 cycloalkyl group, a C6 to C30 aryl group, a C1 to C20 alkoxy group, a C1 to C20 thioether group, and / or (e.g., any suitable combination thereof). "Unsubstituted" means that hydrogen has not been replaced by another substituent and hydrogen is retained. As used herein, unless otherwise defined (e.g., when), the term "alkyl" refers to a linear or branched aliphatic hydrocarbon group. The alkyl group may be a "saturated alkyl" that does not contain any double or triple bonds. The alkyl group can be a C1 to C8 alkyl group. For example, the alkyl group can be a C1 to C7 alkyl group, a C1 to C6 alkyl group, or a C1 to C5 alkyl group. For example, the C1 to C5 alkyl group can be methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, dibutyl, terbutyl, or 2,2-dimethylpropyl. As used herein, unless otherwise defined (e.g., when), the term "cycloalkyl" refers to a monovalent cyclic aliphatic hydrocarbon group. The cycloalkyl group can be a C3 to C8 cycloalkyl, C3 to C7 cycloalkyl, C3 to C6 cycloalkyl, C3 to C5 cycloalkyl, or C3 to C4 cycloalkyl. For example, the cycloalkyl group can be cyclopropyl, cyclobutyl, cyclopentyl, or cyclohexyl, but this disclosure is not limited thereto. As used herein, the term "aliphatic unsaturated organic group" refers to a hydrocarbon group in which the bonds between carbon atoms in the group are double bonds, triple bonds, or (e.g., any suitable combination thereof). The aliphatic unsaturated organic group can be a C2 to C8 aliphatic unsaturated organic group. For example, the aliphatic unsaturated organic group can be a C2 to C7 aliphatic unsaturated organic group, a C2 to C6 aliphatic unsaturated organic group, a C2 to C5 aliphatic unsaturated organic group, or a C2 to C4 aliphatic unsaturated organic group. For example, the C2 to C4 aliphatic unsaturated organic group can be vinyl, ethynyl, allyl, 1-propenyl, 1-methyl-1-propenyl, 2-propenyl, 2-methyl-2-propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-butynyl, 2-butynyl, or 3-butynyl. As used herein, the term "aryl" refers to a cyclic substituent in which all atoms have p orbitals and these p orbitals are conjugated, and may include monocyclic or fused-ring polycyclic functional groups (i.e., rings that share adjacent carbon atom pairs). As used herein, the term "heteroaryl" may refer to an aryl group containing at least one heteroatom selected from N, O, S, P, and Si. Two or more heteroaryl groups may be directly linked by σ bonds, or if (for example, when) the heteroaryl group contains two or more rings, the two or more rings may be fused. When the heteroaryl group is a fused ring, each ring may independently contain one to three heteroatoms. As used herein, unless otherwise defined, the term "alkenyl" refers to an aliphatic unsaturated alkenyl group containing at least one carbon-carbon double bond in a straight-chain or branched aliphatic hydrocarbon group. As used herein, unless otherwise defined, the term "alkynyl" refers to an aliphatic unsaturated alkynyl group that contains at least one carbon-carbon triple bond and is a straight-chain or branched aliphatic hydrocarbon group. The semiconductor photoresist composition according to one or more embodiments will be described in more detail below. The semiconductor photoresist composition according to one or more embodiments includes a Sn-containing organometallic compound, a carboxylic acid compound comprising at least one aryl group and an unsaturated bond, and a solvent. For example, the unsaturated bond may not be included in the at least one aryl group. For example, in one or more embodiments, the carboxylic acid compound may be a compound represented by chemical formula 1 or chemical formula 2. Chemical Formula 1 In chemical formula 1, R 1 To R 3 Each of these can be independently hydrogen, halogen, hydroxyl, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), from R 1 To R 3At least one of the selected components may be a substituted or unsubstituted C6 to C30 aryl group, and L 1 It is a single bond or a substituted or unsubstituted C1 to C10 alkyl group; Chemical formula 2 In chemical formula 2, R 4 It can be a substituted or unsubstituted C6 to C30 aryl group, and L 2 It is a single bond or a substituted or unsubstituted C1 to C10 alkyl group. This semiconductor photoresist composition can improve sensitivity and LER and achieve excellent or adequate resolution by applying (e.g., simultaneously) both aryl and unsaturated carboxylic acid compounds. For example, in one or more embodiments, R of chemical formula 1 1 Or R 2 At least one of them or R 3 Each can be an independently substituted or unsubstituted C6 to C30 aryl group. In one or more embodiments, from R in Formula 1 1 and R 2 Choose at least one, or R 3 And R in chemical formula 2 4 Each can be independently substituted or unsubstituted phenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl group, substituted or unsubstituted naphthyl, substituted or unsubstituted anthraquinone, substituted or unsubstituted phenanthryl, or substituted or unsubstituted triphenylene group. In one or more embodiments, the carboxylic acid compound may be any of the compounds listed in Group 1. Group 1 Based on 100% by weight of the total weight of the semiconductor photoresist composition, the carboxylic acid compound may be included in an amount of about 0.001 to about 10% by weight. In one or more embodiments, based on the total weight of the semiconductor photoresist composition of 100% by weight, the carboxylic acid compound may be included in an amount of about 0.01 to about 10% by weight, about 0.01 to about 5% by weight, about 0.05 to about 5% by weight, or about 0.1 to about 5% by weight. Based on the total weight of the semiconductor photoresist composition of 100% by weight, the Sn organometallic compound may be included in an amount of about 0.5% by weight to about 30% by weight. The semiconductor photoresist composition according to one or more embodiments can improve the sensitivity of the photoresist by including Sn-containing organometallic compounds and carboxylic acid compounds within the above-mentioned content (e.g., amount) range. The semiconductor photoresist composition according to one or more embodiments may comprise a Sn-containing organometallic compound and a carboxylic acid compound in a weight ratio of about 99:1 to about 70:30. In one or more embodiments, the semiconductor photoresist composition may comprise a Sn-containing organometallic compound and a carboxylic acid compound in a weight ratio of about 99:1 to about 80:20. If the weight ratio of the Sn-containing organometallic compound and the carboxylic acid compound meets the above range, a semiconductor photoresist composition with excellent or appropriate sensitivity can be provided. Sn-containing organometallic compounds may include at least one of the oxy group or the carbonyloxy group. In one or more embodiments, the Sn-containing organometallic compound may be represented by chemical formula 3. Chemical formula 3 In chemical formula 3, R 9 It can be selected from substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, and substituted or unsubstituted C7 to C30 aralkyl. 10 To R 12 Each of these can be independently a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, a substituted or unsubstituted C7 to C30 aralkyl, an alkoxy, or an aryloxy (-OR) group. a , where R a It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), or a carboxyl group (-O(C=O)R). b , where R b It can be hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), alkylamide or dialkylamide (-NR) c R d , where R c and R d Each of these can be independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), or a amide (-NR) group. e (C=OR f ), where R e and R f Each of these can be independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), or an amidoyl (-NR) group. g C(NR h )R i , where R g R h and R i Each of these can be independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), an alkylthio or arylthio (-SR) j , where R j It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), or a thiocarboxyl (-S(C=O)R k , where R k It can be hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), and in R 10 To R 12 At least one of them can be an alkoxy or an aryloxy (-OR) a , where R a It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), or a carboxyl group (-O(C=O)R). b , where R b It can be hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), alkylamide or dialkylamide (-NR) c R d , where R c and R dEach of these can be independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), or a amide (-NR) group. e (C=OR f ), where R e and R f Each of these can be independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), or an amidoyl (-NR) group. g C(NR h )R i , where R g R h and R i Each of these can be independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), an alkylthio or arylthio (-SR) j , where R j It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), or a thiocarboxyl (-S(C=O)R k , where R kIt can be hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable) combination thereof. In one or more embodiments, in R 10 To R 12 At least one can be selected from alkoxy or aryloxy (-OR) a , where R a It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or (e.g., any suitable combination thereof), and a carboxyl group (-O(C=O)R). b , where R b It can be selected from hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or any suitable combination thereof. In one or more embodiments, the compound represented by Formula 3 includes -OR a or -OC(=O)R b As a ligand, patterns formed using semiconductor photoresist compositions containing this compound can exhibit excellent or appropriate limiting resolution. In addition, -OR a or -OC(=O)R b The ligand can determine the solubility of the compound represented by chemical formula 3 in the solvent. In one or more embodiments, R 9It can be a substituted or unsubstituted C1 to C8 alkyl group, a substituted or unsubstituted C3 to C8 cycloalkyl group, a substituted or unsubstituted C2 to C8 aliphatic unsaturated organic group containing one or more double or triple bonds, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C4 to C20 heteroaryl group, a carbonyl group, an ethoxy group, a propoxy group, or any suitable combination thereof. a It can be a substituted or unsubstituted C1 to C8 alkyl, a substituted or unsubstituted C3 to C8 cycloalkyl, a substituted or unsubstituted C2 to C8 alkenyl, a substituted or unsubstituted C2 to C8 alkynyl, a substituted or unsubstituted C6 to C20 aryl, or (e.g., any suitable) combination thereof, and R b It can be hydrogen, substituted or unsubstituted C1 to C8 alkyl, substituted or unsubstituted C3 to C8 cycloalkyl, substituted or unsubstituted C2 to C8 alkenyl, substituted or unsubstituted C2 to C8 alkynyl, substituted or unsubstituted C6 to C20 aryl, or any suitable combination thereof. In one or more embodiments, R 9 It can be methyl, ethyl, propyl, butyl, isopropyl, tributyl, 2,2-dimethylpropyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, vinyl, propenyl, butenyl, ethynyl, propynyl, butynyl, phenyl, tolyl, xylyl, benzyl, methyl, acetyl, propionyl, butyryl, pentayl, ethoxy, propoxy, or any suitable combination thereof, R a It can be ethyl, propyl, butyl, isopropyl, tributyl, 2,2-dimethylpropyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, vinyl, propenyl, butenyl, ethynyl, propynyl, butynyl, phenyl, tolyl, xylylyl, benzyl, or any suitable combination thereof, and R b It can be hydrogen, ethyl, propyl, butyl, isopropyl, tributyl, 2,2-dimethylpropyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, vinyl, propenyl, butenyl, ethynyl, propynyl, butynyl, phenyl, tolyl, xylyl, benzyl, or any suitable combination thereof. In one or more embodiments, the Sn-containing organometallic compound may be represented by chemical formula 4 or chemical formula 5. Chemical formula 4R 13 z SnO (2-(z / 2)-(x / 2)) (OH) x In chemical formula 4, R 13 It can be a C1 to C31 hydrocarbon group, 0 < z ≤ 2, and 0 < (z+x) ≤ 4; Chemical formula 5R 14 a1 Sn b1 X c1 Y d1 In chemical formula 5, R 14 It can be a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group containing one or more double or triple bonds, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C4 to C30 heteroaryl group, a carbonyl group, an ethylene oxide group, a propylene oxide group, or any suitable combination thereof; X can be sulfur (S), selenium (Se), or tellurium (Te); Y can be -OR l or -OC(=O)R m , where R l It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or any suitable combination thereof, R m It can be hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or any suitable combination thereof, and a1, b1, c1 and d1 can each be an integer from 1 to 20 independently. The solvent for the semiconductor photoresist composition according to one or more embodiments may be an organic solvent and may be selected, for example, from aromatic compounds (e.g., xylene, toluene and / or the like), alcohols (e.g., 4-methyl-2-pentanol, 4-methyl-2-propanol, 1-butanol, methanol, isopropanol, 1-propanol), ethers (e.g., anisole, tetrahydrofuran), esters (n-butyrate, propylene glycol monomethyl ether acetate, ethyl acetate, ethyl lactate), ketones (e.g., methyl ethyl ketone, 2-heptanone) and / or mixtures thereof (e.g., any suitable mixtures), but this disclosure is not limited thereto. The semiconductor photoresist composition according to one or more embodiments may further include a resin, in addition to the Sn-containing organometallic compound, carboxylic acid compound, and solvent described above. The resin may be a phenolic resin containing at least one aromatic fraction selected from the portions of Group 2. Group 2 The resin can have a weight average molecular weight of about 500 to about 20,000. In one or more embodiments, the resin may be included in an amount of about 0.1% to about 50% by weight, based on 100% by weight of the total amount of the semiconductor photoresist composition. When the resin is included in the above-mentioned content (e.g., amount) range, it may have excellent or suitable etch resistance and heat resistance. Furthermore, the semiconductor photoresist composition according to one or more embodiments may include (e.g., constitute therewith) the aforementioned Sn-containing organometallic compound, carboxylic acid compound, solvent, and resin. In this disclosure, the semiconductor photoresist composition according to one or more embodiments may further include one or more additives as needed. Non-limiting examples of additives may be surfactants, crosslinking agents, leveling agents, organic acids, quenchers, and / or combinations thereof (e.g., any suitable combination). Interfacial surfactants may include, for example, alkylbenzene sulfonates, alkylpyridinium salts, polyethylene glycol, quaternary ammonium salts and / or combinations thereof (e.g., any suitable ones), but the embodiments disclosed herein are not limited thereto. The crosslinking agent can be, for example, a melamine crosslinking agent, a substituted urea crosslinking agent, an acrylic crosslinking agent, an epoxy crosslinking agent, or a polymer crosslinking agent, but the embodiments of this disclosure are not limited thereto. It can be a crosslinking agent having at least two crosslinking-forming substituents, such as compounds like methoxymethylated glycoluril, butoxymethylated biuret, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanamine, butoxymethylated benzoguanamine, 4-hydroxybutyl acrylate, acrylic acid, urethane acrylate, methyl acrylate, 1,4-butanediol diglycidyl ether, glycidyl, diglycidyl 1,2-cyclohexane dicarboxylate, trimethylpropane triglycidyl ether, 1,3-bis(glycidoxypropyl)tetramethyldisiloxane, methoxymethylated urea, butoxymethylated urea, methoxymethylated thiourea, and / or similar compounds. Leveling agents can be used to improve the smoothness of coatings during the printing process, and suitable leveling agents can be commercially available. Organic acids may include p-toluenesulfonic acid, benzenesulfonic acid, p-dodecylbenzenesulfonic acid, 1,4-naphthalenedisulfonic acid, methanesulfonic acid, sulfonium fluoride salts, malonic acid, citric acid, propionic acid, methacrylic acid, oxalic acid, lactic acid, glycolic acid, succinic acid, and / or any suitable combination thereof, but the embodiments disclosed herein are not limited thereto. The quencher may be diphenyl(p-tolyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene or any suitable combination thereof. The amount of additives contained in semiconductor photoresist compositions can be controlled or selected according to the desired or suitable performance. In one or more embodiments, the semiconductor photoresist composition may further include a silane coupling agent as an adhesion enhancer to improve the tightness of contact with the substrate (e.g., to improve the adhesion of the semiconductor photoresist composition to the substrate). The silane coupling agent may be, for example, a silane compound containing carbon-carbon unsaturated bonds, such as vinyltrimethoxysilane, vinyltriethoxysilane, vinyltrichlorosilane, vinyltri(β-methoxyethoxy)silane, or 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane; trimethoxy[3-(anilino)propyl]silane; and / or the like, but embodiments of this disclosure are not limited thereto. Semiconductor photoresist compositions can form patterns with a high aspect ratio without collapse. Therefore, to form fine patterns with widths (e.g., linewidths) of, for example, about 5 nanometers to about 100 nanometers, about 5 nanometers to about 80 nanometers, about 5 nanometers to about 70 nanometers, about 5 nanometers to about 50 nanometers, about 5 nanometers to about 40 nanometers, about 5 nanometers to about 30 nanometers, or about 5 nanometers to about 20 nanometers, the semiconductor photoresist composition can be used in photolithography processes using light with wavelengths ranging from about 5 nanometers to about 150 nanometers, for example, about 5 nanometers to about 100 nanometers, about 5 nanometers to about 80 nanometers, about 5 nanometers to about 50 nanometers, about 5 nanometers to about 30 nanometers, or about 5 nanometers to about 20 nanometers. Therefore, the semiconductor photoresist composition according to one or more embodiments can be used to implement extreme ultraviolet lithography using an EUV light source with a wavelength of about 13.5 nanometers. According to one or more embodiments, a method for forming a pattern using the above-described semiconductor photoresist composition is provided. For example, the pattern produced may be a photoresist pattern. A method for forming a pattern according to one or more embodiments includes forming an etch target layer (e.g., an etch target layer) on a substrate, coating a semiconductor photoresist composition on the etch target layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and using the photoresist pattern as an etch mask to etch the etch target layer. The method of forming a pattern using a semiconductor photoresist composition will now be described in more detail with reference to FIGS. 1A to 1E. FIGS. 1A to 1E are cross-sectional views illustrating a method of forming a pattern using a semiconductor photoresist composition according to one or more embodiments. Referring to FIG1A, an object for etching (e.g., an etching target layer or etching layer) is prepared. The object for etching may be a thin film 102 formed on a semiconductor substrate 100. Hereinafter, the object for etching is defined as the thin film 102. The surface of the thin film 102 is cleaned to remove impurities and / or similar substances remaining thereon. The thin film 102 may be, for example, a silicon nitride layer, a polycrystalline silicon layer, or a silicon oxide layer. Subsequently, the resist underlayer composition for forming the resist underlayer 104 is spin-coated onto the surface of the cleaned film 102. However, embodiments of this disclosure are not limited thereto, and one or more suitable coating methods may be used, such as spraying, dip coating, blade coating, printing methods (e.g., inkjet printing and / or screen printing), and / or similar methods. In one or more embodiments, the coating process for the resist underlayer may not be provided, although the following description includes the coating process for the resist underlayer. The coated resist underlayer composition is then dried and baked to form a resist underlayer 104 on the film 102. Baking (e.g., heat treatment) can be performed at a temperature of about 100°C to about 500°C, for example, about 100°C to about 300°C. The resist underlayer 104 is formed between the substrate 100 and the photoresist layer 106, thereby preventing or reducing the non-uniformity and patterning of the photoresist linewidth when rays reflected from the interface between the substrate 100 and the photoresist layer 106 or the interlayer hard mask are scattered into unintended photoresist areas (e.g., when this occurs). Referring to FIG1B, a photoresist layer 106 is formed by coating a semiconductor photoresist composition onto a resist substrate 104. The photoresist layer 106 is obtained by coating the aforementioned semiconductor photoresist composition onto a thin film 102 formed on a substrate 100 and then curing it by heat treatment. In one or more embodiments, patterning using a semiconductor photoresist composition may include coating a semiconductor photoresist composition on a substrate 100 having a thin film 102 by spin coating, slot coating, inkjet printing and / or similar methods, and then drying to form a photoresist layer 106. The composition of semiconductor photoresist has been described in detail and will not be repeated here. Subsequently, the substrate 100 having the photoresist layer 106 undergoes a first baking (e.g., heat treatment) process. The first baking process can be performed at a temperature of about 80°C to about 120°C. Referring to Figure 1C, a patterned mask 110 can be used to selectively expose the photoresist layer 106. For example, exposure can use activation radiation with high-energy wavelengths, such as EUV (extreme ultraviolet; wavelength approximately 13.5 nm), electron beams (E-Beam) and / or similar light sources, as well as short-wavelength light sources, such as i-line (wavelength approximately 365 nm), KrF excimer laser (wavelength approximately 248 nm), ArF excimer laser (wavelength approximately 193 nm) and / or similar light sources. For example, the light or exposure beam used for exposure according to one or more embodiments may have a short wavelength in the range of about 5 nanometers to about 150 nanometers, and / or a high-energy wavelength, for example, it may be EUV (extreme ultraviolet; wavelength 13.5 nanometers), and / or it may be an electron beam (E-Beam), and / or a similar light source. The exposed region 106b of the photoresist layer 106 has a different solubility than the unexposed region 106a of the photoresist layer 106 by forming polymers (e.g., through cross-linking reactions such as condensation between organometallic compounds). Subsequently, the substrate 100 undergoes a second baking (heat treatment) process. The second baking process can be performed at a temperature of approximately 90°C to approximately 200°C. Due to the second baking process, the exposed areas 106b of the photoresist layer 106 become insoluble in the developer. In Figure 1D, a developer is used to dissolve and remove the unexposed area 106a of the photoresist layer to form a photoresist pattern 108. For example, the photoresist pattern 108 corresponding to a negative tone image is completed by using an organic solvent such as 2-heptanone and / or the like to dissolve and remove the unexposed area 106a of the photoresist layer. As described above, the developer used in the patterning method according to one or more embodiments can be an organic solvent. The organic solvent used in the patterning method according to one or more embodiments can be, for example, ketones such as methyl ethyl ketone, acetone, cyclohexanone, 2-heptanone and / or similar; alcohols such as 4-methyl-2-propanol, 1-butanol, isopropanol, 1-propanol, methanol and / or similar; esters such as propylene glycol monomethyl ether acetate, ethyl acetate, ethyl lactate, n-butyl acetate, butyrolactone and / or similar; aromatic compounds such as benzene, xylene, toluene and / or similar; or combinations thereof (e.g., any suitable combination). However, the photoresist pattern according to one or more embodiments is not limited to negative-tonal images, but can be formed to have positive-tonal images. Here, the developer used to form the positive-tonal image can be a quaternary ammonium hydroxide composition, such as tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, or a combination thereof (e.g., any suitable combination). As described above, exposure to high-energy light, such as EUV (extreme ultraviolet; wavelength 13.5 nm), electron beams (E-Beam), and / or similar light sources, and / or light with short wavelengths, such as i-line (wavelength about 365 nm), KrF excimer laser (wavelength about 248 nm), ArF excimer laser (wavelength about 193 nm), and / or similar light sources, can provide a photoresist pattern 108 with a thickness or width of about 5 nm to about 100 nm. For example, in one or more embodiments, the photoresist pattern 108 may have a thickness or width of about 5 nm to about 90 nm, about 5 nm to about 80 nm, about 5 nm to about 70 nm, about 5 nm to about 60 nm, about 5 nm to about 50 nm, about 5 nm to about 40 nm, about 5 nm to about 30 nm, or about 5 nm to about 20 nm. In one or more embodiments, the photoresist pattern 108 may have a pitch (center-to-center distance between adjacent features in the pattern) with a half pitch of less than or equal to about 50 nanometers, such as less than or equal to about 40 nanometers, such as less than or equal to about 30 nanometers, such as less than or equal to about 20 nanometers, or such as less than or equal to about 15 nanometers, and a linewidth roughness of less than or equal to about 10 nanometers, or less than or equal to about 5 nanometers, less than or equal to about 3 nanometers, or less than or equal to about 2 nanometers. Subsequently, the photoresist pattern 108 is used as an etching mask to etch the resist substrate 104. Through this etching process, an organic layer pattern 112 is formed. The organic layer pattern 112 may also have a width corresponding to the photoresist pattern 108. Referring to FIG1E, the exposed thin film 102 is etched by applying a photoresist pattern 108 as an etching mask. As a result, the thin film is formed into a thin film pattern 114. The etching of thin film 102 can be, for example, dry etching using an etching gas, and the etching gas can be, for example, CHF. 3. CF 4. Cl 2. BCl 3, or their mixtures. In the exposure process, the thin film pattern 114 formed using the photoresist pattern 108 formed by the exposure process performed using an EUV light source can have a width corresponding to the photoresist pattern 108. For example, in one or more embodiments, the thin film pattern 114 can have a width (e.g., linewidth) of about 5 nanometers to about 100 nanometers, which is equal to the width of the photoresist pattern 108. For example, in one or more embodiments, the thin film pattern 114 formed using the photoresist pattern 108 formed by the exposure process performed using an EUV light source can have a width (e.g., linewidth) of about 5 nanometers to about 90 nanometers, about 5 nanometers to about 80 nanometers, about 5 nanometers to about 70 nanometers, about 5 nanometers to about 60 nanometers, about 5 nanometers to about 50 nanometers, about 5 nanometers to about 40 nanometers, about 5 nanometers to about 30 nanometers, or about 5 nanometers to about 20 nanometers, for example, a width (e.g., linewidth) less than or equal to about 20 nanometers, similar to the width of the photoresist pattern 108. The present disclosure will now be described in more detail through examples of the fabrication of the aforementioned semiconductor photoresist composition. However, the present disclosure is not technically limited to the examples described below. Synthesis of organometallic compounds Synthesis Example 1 40.7 grams of t-butyltriphenyltin (t-butylSnPh) 3) Add 300g of propionic acid to a 250ml double-necked round-bottom flask, and then heat under reflux for 24 hours. By removing unreacted propionic acid under reduced pressure, a compound represented by chemical formula 6 was obtained. Chemical Formula 6 Synthesis Example 2 Add 30 ml of anhydrous pentane to 10 g of tripentyltin trichloride (t-AmylSnCl). 3) The mixture was kept at 0°C, and then 7.4 g of diethylamine and 6.1 g of ethanol were added. The mixture was stirred at room temperature for 1 hour. After the reaction was complete, the product was filtered, concentrated, and vacuum dried to obtain the compound represented by chemical formula 7. Chemical Formula 7 Synthesis Example 3 10 g of dibutyltin dichloride was dissolved in 30 mL of diethyl ether, and 70 mL of 1 M (moles per liter) aqueous sodium hydroxide (NaOH) solution was added. The mixture was then stirred for 1 hour. After stirring, the resulting solid was filtered, washed three times with 25 mL of deionized water, and dried under reduced pressure at 100 °C to obtain an organometallic compound represented by chemical formula 8 with a weight-average molecular weight of 1,500. Chemical Formula 8 Preparation of semiconductor photoresist composition Example 1 to 11 Comparison Examples 1 to 3 According to Table 1, the Sn-containing organometallic compounds selected from the Sn-containing organometallic compounds represented by chemical formulas 6 to 8 obtained from Synthetic Examples 1 to 3 and the carboxylic acid compounds were dissolved in propylene glycol methyl ether acetate (PGMEA) at a weight ratio shown in Table 1, with a concentration of 3% by weight, and then filtered through a 0.1-micron polytetrafluoroethylene (PTFE) injection filter to prepare the semiconductor photoresist compositions according to Examples 1 to 11 and Comparative Examples 1 to 3. Table 1 evaluate 1 Sensitivity and line edge roughness (LER) Evaluation According to the example and comparative examples, each photoresist composition was spin-coated for 30 seconds on a 200 mm circular silicon wafer with hexamethyldisilazane (HMDS) deposited on its surface at 1500 rpm, baked at 110°C for 60 seconds (post-apply baked, PAB), and then left to stand at room temperature (23±2°C) for 30 seconds. Subsequently, extreme ultraviolet light (EUV) was used (Lawrence Berkeley National Laboratory Micro Exposure Tool, MET) to project a linear array of 50 circular pads, each 500 micrometers in diameter, onto a wafer coated with one of the photoresist compositions. Here, the pad exposure time was adjusted to ensure that an increased dose of EUV light was applied to each pad. Then, after exposure, the resist and substrate are baked on a hot plate at 160°C for 120 seconds. The baked film is developed in PGMEA solvent to form a negative tone image. Finally, the obtained film is baked again on a hot plate at 150°C for 2 minutes to complete the process. The response of resist linewidth to variations in exposure dose (energy) was measured using a critical dimension scanning electron microscope (CD-SEM). Appropriate sensitivity to exposure dose was confirmed by measuring the resist linewidth values ​​formed for each exposure dose. Resolution was confirmed by measuring the resist linewidth formed by exposing the entire wafer with the same dose at the confirmed appropriate or suitable sensitivity. Furthermore, after measuring line edge roughness (LER) from CD-SEM images, sensitivity and LER were evaluated according to the following criteria, and the results are shown in Table 2. Sensitivity evaluation criteria A: Less than 16 millijoules per square centimeter (mJ / cm²) 2 ) B: Greater than or equal to 16 mJ / cm² and less than 18 mJ / cm² C: Greater than or equal to 18 millijoules per square centimeter LER Evaluation criteria ○: Less than 2 nanometers △: Greater than or equal to 2 nanometers and less than 5 nanometers X: Greater than or equal to 5 nanometers Resolution Standard A: Less than 14.3 B: Greater than or equal to 14.3 and less than 15.2 C: Greater than or equal to 15.2 Table 2 Referring to the results in Table 2, the patterns formed using the semiconductor photoresist compositions according to Examples 1 to 11 exhibited excellent or appropriate sensitivity and LER and / or resolution characteristics compared to the patterns formed using the semiconductor photoresist compositions according to Comparative Examples 1 to 3. In this disclosure, the terms "and / or" and "or" can include any and all combinations of one or more of the listed items. When an operation such as "at least one" precedes the list of elements, it modifies the entire list of elements rather than a single element in the list. It will be further understood that the terms "comprising," "including," or "having" as used in this disclosure specify the presence of the stated feature, integer, step, operation, element, and / or component, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. The " / " used below may be interpreted as "and" or "or" as appropriate. In this disclosure, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly indicates otherwise. Furthermore, the use of "may" in describing embodiments of this disclosure means "one or more embodiments of this disclosure." In the context of this disclosure, unless otherwise defined, the terms "use," "using," and "used" may be considered synonymous with the terms "utilize," "utilizing," and "utilized," respectively. In this disclosure, the term "about" or similar terms are used as approximations rather than terms of degree, intended to describe the inherent bias in a measured or calculated value as recognized by one of ordinary skill in the art. "About" or "approximately" as used herein also includes the value and refers to a range of acceptable deviations from the specific value as determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., limitations of the measurement system). For example, "about" might mean within one or more standard deviations, or within ±30%, 20%, 10%, or 5% of the value. Any numerical range described herein is intended to include all subranges with the same numerical precision within the described range. For example, the range "1.0 to 10.0" is intended to include all subranges between (and inclusive of) the described minimum value of 1.0 and the described maximum value of 10.0, i.e., a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limit described herein is intended to include all lower numerical limits contained therein, and any minimum numerical limit described in this specification is intended to include all higher numerical limits contained therein. Therefore, the applicant reserves the right to amend this specification (including the claims) to explicitly describe any subranges included within the range explicitly described herein. Those skilled in the art will understand from the entire contents of this disclosure that each suitable feature of the various embodiments of this disclosure may be combined partially or completely with each other or with other features, and may be technically locked and operated in various suitable ways. Each embodiment may be implemented independently or in any suitable manner in cooperation with each other, unless otherwise stated or implied. The pattern forming apparatus, semiconductor forming apparatus, and / or any other related apparatus or element according to embodiments of this disclosure can be implemented using any suitable hardware, firmware (e.g., application-specific integrated circuit), software, or a combination of hardware, firmware, and software. For example, various elements of the apparatus can be formed on an integrated circuit (IC) wafer or on a discrete IC wafer. Furthermore, various elements of the apparatus can be implemented on a flexible printed circuit film, a tape carrier package (TCP), a printed circuit board (PCB), or formed on a substrate. Additionally, various elements of the apparatus can be processes or threads running on one or more processors in one or more computing devices, executing computer program instructions and interacting with other system elements to perform the various functions described herein. The computer program instructions are stored in memory, which can be implemented in the computing device using standard storage devices (e.g., random access memory (RAM)). The computer program instructions can also be stored on other non-transitory computer-readable media, such as CD-ROMs, flash memory drives, or similar devices. Furthermore, those skilled in the art will recognize that the functions of various computing devices can be combined or integrated into a single computing device, or the functions of a particular computing device can be distributed across one or more other computing devices without departing from the scope of this disclosure. Previously, exemplary embodiments have been described and illustrated. However, it will be apparent to those skilled in the art that this disclosure is not limited to the described exemplary embodiments, and various modifications and transformations can be made without departing from the spirit and scope of this disclosure. Therefore, such modified or transformed embodiments should not be understood separately from the technical concept and aspects of this disclosure, and the modified embodiments are within the scope of the claims and their equivalents of this disclosure. 100: Semiconductor substrate / substrate; 102: Thin film; 104: Resist underlayer; 106: Photoresist layer; 106a: Unexposed area; 106b: Exposed area; 108: Photoresist pattern; 110: Patterned mask; 112: Organic layer pattern; 114: Thin film pattern. The above and other aspects, features and advantages of certain embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which: Figures 1A to 1E are cross-sectional views illustrating a method of forming a pattern using a semiconductor photoresist composition according to one or more embodiments of this disclosure. 100: Semiconductor substrate / substrate 108: Photoresist pattern 112: Organic layer pattern 114: Thin Film Pattern

Claims

1. A semiconductor photoresist composition, comprising: Organometallic compounds containing Sn, represented by chemical formula 3 or chemical formula 4; carboxylic acid compounds containing at least one aryl group and an unsaturated bond; And a solvent, wherein the carboxylic acid compound is represented by Formula 1 or Formula 2: Formula 1: In Formula 1, R1 to R3 are each independently hydrogen, halogen, hydroxyl, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C6 to C30 aryl, or a combination thereof, at least one selected from R1 to R3 is a substituted or unsubstituted C6 to C30 aryl, and L1 is a single bond or a substituted or unsubstituted C1 to C10 alkyl; and Formula 2: In Formula 2, R4 is a substituted or unsubstituted C6 to C30 aryl, and L2 is a single bond or a substituted or unsubstituted C1 to C10 alkyl; and Formula 3: In Formula 3, R9 is a substituted or unsubstituted C1 to C20 alkyl. R10 to R12 are each independently -ORa, where Ra is a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof; or -O(C=O)Rb, where Rb is hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof; and in Formula 4 R13zSnO(2-(z / 2)-(x / 2))(OH)x, R13 is a C1 to C31 hydrocarbon group, 0 < z ≤ 2, and 0 < (z+x) ≤ 4.

2. The semiconductor photoresist composition as claimed in claim 1, wherein at least one selected from R1 and R2 or each of R3 is independently a substituted or unsubstituted C6 to C30 aryl group.

3. The semiconductor photoresist composition as claimed in claim 1, wherein at least one selected from R1 and R2, or R3 and R4, are each independently substituted or unsubstituted phenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthraceneyl, substituted or unsubstituted phenanthryl, or substituted or unsubstituted triphenyl.

4. The semiconductor photoresist composition as claimed in claim 1, wherein the carboxylic acid compound is any one selected from the compounds listed in Group 1: Group 1.

5. The semiconductor photoresist composition as claimed in claim 1, wherein the amount of the carboxylic acid compound is 0.01 to 10% by weight, based on 100% by weight of the total weight of the semiconductor photoresist composition.

6. The semiconductor photoresist composition as claimed in claim 1, wherein the amount of the carboxylic acid compound is from 0.5% to 5% by weight based on 100% by weight of the total weight of the semiconductor photoresist composition.

7. The semiconductor photoresist composition as claimed in claim 1, wherein the amount of the Sn-containing organometallic compound is from 0.5% to 30% by weight, based on 100% by weight of the total weight of the semiconductor photoresist composition.

8. The semiconductor photoresist composition as claimed in claim 1, wherein the semiconductor photoresist composition further comprises additives selected from surfactants, crosslinking agents, leveling agents, organic acids, quenchers, and combinations thereof.

9. The semiconductor photoresist composition as claimed in claim 1, wherein R9 is a substituted or unsubstituted C1 to C8 alkyl group, Ra is a substituted or unsubstituted C1 to C8 alkyl group, a substituted or unsubstituted C3 to C8 cycloalkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and Rb is hydrogen, a substituted or unsubstituted C1 to C8 alkyl group, a substituted or unsubstituted C3 to C8 cycloalkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof.

10. A method for forming a pattern, comprising: Forming an etch target layer on a substrate; coating the semiconductor photoresist composition of any one of claims 1 to 9 onto the etch target layer to form a photoresist layer; patterning the photoresist layer to form a photoresist pattern; and using the photoresist pattern as an etch mask to etch the etch target layer.

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