Semiconductor device structure and method of fabricating same

TWI938793BActive Publication Date: 2026-09-11TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
View PDF 4 Cites 0 Cited by

Patent Information

Application Number
TW114103499
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2024-02-02
Filing Date
2025-01-24
Publication Date
2026-09-11
Estimated Expiration
2045-01-23

Smart Images

  • Figure TWG2TB001910361_001
    Figure TWG2TB001910361_001
  • Figure TWG2TB001910361_002
    Figure TWG2TB001910361_002
  • Figure TWG2TB001910361_003
    Figure TWG2TB001910361_003
Patent Text Reader

Abstract

A semiconductor device structure and manufacturing method include a first dielectric component and a plurality of resonator components located within the first dielectric component. The semiconductor device structure also includes a second dielectric component located on the first dielectric component. A cover metal layer is located on the second dielectric component. The cover metal layer includes one or more cover metal vias extending through the second dielectric component to one of the resonator components.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Oscillating capacitor architecture in polysilicon for improved capacitance

    CN110462822A

  • Semiconductor structure

    TW202236707A

  • Semiconductor structure forming method

    TW202238830A

  • Multi-layer resonator assembly and method for fabricating same

    US20230216480A1