Plasma treatment apparatus and plasma treatment method

Abstract

This invention implements a technique that, by suppressing the decrease in plasma density at locations near the sidewalls of a vacuum container, uniformizes the overall plasma density without causing it to decrease. The plasma processing apparatus (1) includes: a processing chamber (64); a stage (30) disposed inside the processing chamber (64) and holding the object to be processed; and one or more antennas (20) that generate a magnetic field for generating plasma inside the processing chamber (64), wherein the antennas (20) are structured such that, when viewed from a direction orthogonal to the mounting surface of the stage (30), the ends of the linear antennas (20) are bent or folded.

Description

[Technical Field]

[0001] This disclosure relates to a plasma treatment apparatus and a plasma treatment method. [Previous Technology]

[0002] A plasma treatment apparatus is known that uses an antenna to generate plasma inside a vacuum container. In recent years, plasma treatment apparatuses using inductively coupled plasma (ICP) have become widely used. The plasma treatment apparatus performs prescribed plasma treatment on the object being treated using the generated plasma, depending on its type.

[0003] In plasma processing apparatuses, the plasma density distribution inside the vacuum container is sometimes uneven. When the plasma density distribution is uneven, the plasma processing of the workpiece may also become uneven. Therefore, for example, Patent Document 1 discloses a technique in a multiplied antenna where the plasma density is homogenized by achieving homogenization of the induced electric field (eliminating biases in the induced electric field distribution). [Prior Art Documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2003-229410 [Summary of the Invention]

[0005] [Problem to be Solved by the Invention] However, the prior art as described above has the following problem: the decrease in plasma density in the area near the side wall of the vacuum container has not been taken into consideration. In order to solve this problem, for example, if it is desired to homogenize the overall plasma density to be consistent with the plasma density in the area near the side wall of the vacuum container, there is a risk of an overall decrease in plasma density.

[0006] This disclosure was made in view of the above-mentioned problems, with the aim of providing a technique that, by suppressing the decrease in plasma density near the sidewalls of the vacuum container, uniformizes the overall plasma density without causing it to decrease. [Means of Solving the Problem]

[0007] In order to solve the aforementioned problem, a plasma processing apparatus of one aspect of the present disclosure includes: a processing chamber; a stage disposed inside the processing chamber and on which the object to be processed is placed; and one or more antennas that generate a magnetic field for generating plasma inside the processing chamber, the antennas being configured such that, when viewed from a direction orthogonal to the mounting surface of the stage, the ends of the linear antennas are bent or folded.

[0008] Furthermore, one aspect of the plasma processing method disclosed herein is a method for plasma processing an object to be processed placed on a stage. The plasma processing method includes the following steps: generating plasma by energizing a straight antenna whose end is bent or folded when viewed from a direction orthogonal to the mounting surface of the stage; and moving the stage on which the object to be processed is placed along a direction orthogonal to the direction of the straight portion of the antenna and parallel to the mounting surface. [Effects of the Invention]

[0009] According to one embodiment of the present disclosure, by suppressing the decrease in plasma density at the portion near the sidewall of the vacuum container, the overall plasma density can be homogenized without causing it to decrease.

Implementation Method

[0011] [Embodiment 1] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. FIG1 is a schematic perspective view of the plasma processing apparatus 1 of Embodiment 1. FIG2 is a block diagram showing the main structure of the plasma processing apparatus 1. As shown in FIG1 and FIG2, the plasma processing apparatus 1 includes a power supply 10, an antenna 20, a control unit 40, and a vacuum container 60. The vacuum container 60 is generally rectangular in shape, and a processing chamber 64, which is a generally rectangular space, is provided inside the frame 61. In the figures, the X-axis represents the long side direction of the vacuum container 60, the Y-axis represents the short side direction of the vacuum container 60, and the Z-axis represents the height direction of the vacuum container 60.

[0012] The processing chamber 64 is sealed by a high-frequency window 62. The high-frequency window 62 includes, for example, a dielectric plate and a metal plate. The high-frequency window 62 allows the magnetic field (high-frequency magnetic field) generated by the antenna 20 to be introduced into the processing chamber 64. The plasma-generating gas is introduced into the processing chamber 64 (not shown). Inside the processing chamber 64, the introduced gas is plasmaized by the magnetic field.

[0013] The antenna 20 is positioned directly above the high-frequency window 62, i.e., outside the vacuum container 60. The antenna 20 generates a magnetic field to induce plasma inside the processing chamber 64. The antenna 20 is straight except at its ends (the straight portion is also called the straight section), and is arranged with its long side along the X-axis. More specifically, the antenna 20 has a structure in which the ends of the straight antenna are bent when viewed from a direction orthogonal to the mounting surface of the stage 30. The direction orthogonal to the mounting surface of the stage 30, in other words, refers to the direction along the Z-axis in FIG1. ​​The direction along the Z-axis does not need to be strictly parallel to the Z-axis, but is approximately parallel to the Z-axis. Similarly, the term "orthogonal" in this disclosure does not need to be strictly orthogonal, but is approximately orthogonal to the extent that the effects of this embodiment can be obtained.

[0014] The power supply 10 applies a high-frequency voltage to one end of the antenna 20 via the matching box 11. At the other end of the antenna 20, a grounding impedance control unit 12, which controls the current balance at both ends of the antenna 20, is connected and grounded. For example, the wiring between the antenna 20 and the matching box 11, and between the antenna 20 and the grounding impedance control unit 12, respectively include converters (not shown) that detect the amount of current flowing through the wiring. By controlling the grounding impedance control unit to make the output values ​​of these two converters consistent, the current balance at both ends of the antenna 20 can be adjusted. As a result, the symmetry of the antenna current and plasma density relative to the long side direction of the antenna 20 can be improved with the center of the long side direction of the antenna 20 as the center. This further improves the uniformity of the generated plasma.

[0015] In Figure 1, only one antenna 20 is shown. However, this is not a limitation, and there may be multiple antennas 20. Furthermore, in Figure 1, the antenna 20 is arranged outside the vacuum container 60. This structure simplifies the structure of the vacuum container. However, this is not a limitation, and the antenna 20 may also be arranged inside the vacuum container 60 (not shown). Details regarding the shape of the antenna will be described later.

[0016] Inside the processing chamber 64, a stage 30 for placing the objects to be processed is provided. The stage 30 may also be equipped with a drive unit 50 that swings or scans the stage 30 along the Y-axis direction shown in the figure. That is, the drive unit 50 moves the stage 30 along a direction orthogonal to the direction of the straight section of the antenna 20 and along the direction of the mounting surface. By using the drive unit 50 to move the placed objects to be processed, even with a small number of antennas, large objects to be processed can be processed uniformly.

[0017] The control unit 40 controls the power supply 10 and the drive unit 50. The control unit 40 includes at least one processor 41 and at least one memory 42. The processor 41 can be configured using at least one general-purpose processor such as a microprocessor unit (MPU) or a central processing unit (CPU). The memory 42 can also include various types of memory such as read-only memory (ROM) and random access memory (RAM). As an example, the processor 41 expands various control programs recorded in the ROM of the memory 42 into the RAM for execution, thereby realizing the functions of each part. Moreover, the processor 41 can also include a dedicated processor that includes application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or programmable logic devices (PLDs).

[0018] Figure 3 is a cross-sectional view of the central portion of the vacuum container 60 viewed along the negative Y-axis. The frame 61 of the vacuum container 60 is closed by closing the high-frequency window 62 on its upper surface. The interior of the frame 61 becomes the processing chamber 64, which is sealed by an O-ring 63 and thus maintained in a vacuum state. A stage 30 for placing the object to be processed and a drive unit 50 are arranged in the processing chamber 64, but in Figure 3, the drive unit 50 is omitted and only the stage 30 is shown.

[0019] The regions HR on both side walls in the X-axis direction near the processing chamber 64, as shown in the figure, are also regions corresponding to the two ends of the antenna 20, and are therefore called end regions HR. In the presence of conventional technology using linear antennas, there is a tendency for the plasma density generated near the end regions HR to decrease compared to the region near the center. This is because: since it is the end of the region where plasma is generated, the plasma is prone to diffusion; and the end regions HR are close to the inner wall surface of the frame 61, the plasma is easily attracted by the charged inner wall surface and disappears. This is called plasma wall disappearance. In this embodiment, the shape of the antenna 20 is changed to suppress the decrease in plasma density near the end regions HR. Furthermore, as shown in FIG3, in this embodiment, the antenna 20 has the following structure, that is, the end is bent in a plane parallel to the mounting surface of the stage 30. The plane parallel to the mounting surface of the stage 30, in other words, refers to a plane along the XY plane. Furthermore, the term "parallel" in this disclosure does not need to be parallel in a strict sense, as long as it is approximately parallel to the extent that the effect of this embodiment can be obtained. With this structure, plasma density can be homogenized in the area inside the processing chamber 64 that is parallel to the mounting surface of the stage 30, thereby allowing for uniform processing of the object to be processed.

[0020] Figure 4 is a plan view of the vacuum container 60 and the antenna 20 viewed along the negative side of the Z-axis. As shown in Figure 4, in this embodiment, the antenna 20 has a structure in which the two ends ER of the straight section are bent. More specifically, the antenna 20 includes a straight section LR extending in a straight line along the mounting surface of the stage 30, a first end ER1 on the power supply side of the antenna 20, and a second end ER2 on the ground side of the antenna 20. Furthermore, it has a structure in which, when viewed from a direction orthogonal to the mounting surface of the stage 30 (Z-axis direction), the first end ER1 and the second end ER2 are bent relative to the straight section LR.

[0021] In the examples shown in Figures 3 and 4, the antenna 20 has the following structure: when viewed from a direction orthogonal to the mounting surface of the stage 30, the ends ER1 and / or ER2 of the straight antenna are bent outside the processing chamber 64. However, the antenna 20 may also have the following structure: when viewed from a direction orthogonal to the mounting surface of the stage 30, the ends ER1 and / or ER2 of the straight antenna are bent inside the processing chamber 64.

[0022] By bending the first end ER1 and / or the second end ER2 (also referred to as "end ER") of the linear antenna 20, the decrease in plasma density at the processing chamber 64 corresponding to the position of the end ER can be reduced. The reason is that, compared to an antenna that only contains a straight portion, bending the end ER allows for a longer length of the antenna at its end.

[0023] Figure 5 is a schematic diagram comparing the difference in plasma density at the ends of an antenna 20 with both ends bent (ER) and a straight antenna without both ends bent. The upper view in Figure 5 is the same as the cross-sectional view shown in Figure 3. The lower graph in Figure 5 shows the plasma density of the processing chamber 64 at the location corresponding to the upper cross-sectional view. The dashed line represents the plasma density when using a straight antenna without bending the ends. As shown by the dashed line, the plasma density drops sharply near the end region HR, toward the inner wall surface of the frame 61. On the other hand, the solid line represents the plasma density when using an antenna 20 with both ends bent (ER). As shown by the solid line, using an antenna 20 with both ends bent (ER) increases the induced electric field strength in the end region HR, thus increasing the amount of plasma generated. Therefore, the decrease in plasma density near the end region HR is smaller. That is, using the antenna 20 makes the distribution of plasma density more uniform. In other words, the range of uniform plasma density is wider.

[0024] In the example described, the antenna 20 is formed by bending the end ER. However, in this example, instead of bending the end ER, the end ER can be bent. Figure 6 is a plan view of a plasma processing apparatus 1 with an antenna 20 having a bent shape at the first end ER1 and the second end ER2, viewed from the Z-axis direction. In the antenna 20 shown in Figure 6, the end ER is bent. A bend refers to a shape that extends in a straight line from the bending position to the front end. Instead of bending, this shape can also reduce the decrease in plasma density near the end region HR.

[0025] As shown in FIG3, in this embodiment, the antenna 20 has the following structure, that is, its end is bent in a plane parallel to the mounting surface of the stage 30. However, it is not limited to this. The antenna 20 may also have the following structure, that is, when viewed from the direction along the mounting surface of the stage 30 (Y-axis direction), it is further bent or folded in a direction orthogonal to the mounting surface of the stage 30 (Z-axis direction).

[0026] Figure 7 is a cross-sectional view of the plasma processing apparatus 1 in which the antenna 20, with its end ER also bent in the Z-axis direction, is arranged. Figure 7 is a cross-sectional view of the vacuum container 60 viewed from the negative Y-axis direction. In the antenna 20 shown in Figure 7, the ends ER1 and ER2 are bent in the Z-axis direction. The bending angle of the ends ER can also be smaller than the bending angle in the Y-axis direction.

[0027] The examples described so far show an example where the antenna 20 bends at both ends ER, but it is not limited to this and may also be a shape that bends only on one side. Moreover, an antenna 20 that combines bending and folding may also be used.

[0028] Furthermore, the bending or folding angle is arbitrary. Figure 8 is a schematic diagram showing an example of the degree of bending or folding (angle θ) of the antenna end ER. Angle θ is the angle formed by connecting the point where the bending begins and the line segment at the front end to the straight part of the antenna. The bending angle θ1 of the end ER of antenna 1101 is smaller than the bending angle θ2 of the end ER of antenna 1102. The folding angle θ3 of the end ER of antenna 1103 is smaller than the folding angle θ4 of the end ER of antenna 1104. The angle θ can be in the range of 1° or more and 179° or less, but in order to further increase the induced electric field strength in the end region HR, it is preferable to set it to 45° or more. Considering the ease of wiring with the matching box 11 or the grounding impedance control part 12, it is more preferable to be in the range of 45° to 90°. Figure 9 is a schematic diagram showing an example of the degree of bending when the antenna is bent in the Z-axis direction. In this way, multiple antennas with different bending or folding sizes can also be arranged in the direction along the mounting surface of the stage 30. For example, antennas 1101 to 1104 shown in Figure 8 can also be arranged in the direction along the mounting surface of the stage 30 as shown in the figure.

[0029] In this embodiment, the "end portion ER" of the antenna refers to the range from the point where the antenna begins to bend or fold towards the front end. The length E of the end portion ER (the length from the point where the bend or fold begins in the X-axis direction to the front end, see antenna 1104 in Figure 8) is not particularly limited, but it can be 3% to 20% of the total length L of the antenna (the length between the two ends in the X-axis direction, see antenna 1104 in Figure 8). Alternatively, it can be 5% to 20%, 5% to 15%, or 5% to 10% of the total length. Furthermore, although the absolute value of the length E of the end portion ER also depends on the overall length, it can be 5 cm to 50 cm, 5 cm to 30 cm, 10 cm to 50 cm, or 10 cm to 30 cm.

[0030] The plasma processing apparatus 1 with the above structure uses an antenna 20 with the following structure: when viewed from a direction orthogonal to the mounting surface of the stage 30, the end ER of the straight antenna is bent or folded. At the bent or folded end ER of the antenna, the induced electric field density is greater than that of the straight portion of the antenna. Therefore, the generated plasma density also increases, compensating for the decrease in plasma density in the end ER region caused by the disappearance of the wall, and approaching the plasma density of the straight portion of the antenna. With this structure, the decrease in plasma density near the side wall of the vacuum container 60 can be suppressed, thereby homogenizing the plasma density within the processing chamber 64 without causing an overall decrease in plasma density. Therefore, the object to be processed using the plasma processing apparatus 1 can be processed uniformly. Furthermore, since the uniformity of plasma processing is ensured up to the side wall near the vacuum container, even if the width of the plasma processing in the long side direction of the antenna is the same, the distance from the end of the stage to the side wall of the vacuum container can be relatively small. As a result, the device can be miniaturized, thereby reducing the cost of the device.

[0031] [Embodiment 2] Next, Embodiment 2 of this disclosure will be described with reference to the drawings. For ease of explanation, components that have the same function as those described in Embodiment 1 will be marked with the same symbols, and their descriptions will not be repeated. In Embodiment 2, an embodiment including multiple antennas will be described.

[0032] Figure 10 is a plan view of the plasma processing apparatus 2 of Embodiment 2 viewed from the Z-axis direction. The difference between the plasma processing apparatus 1 of Embodiment 1 and the plasma processing apparatus 2 is that the plasma processing apparatus 2 includes two antennas 20: antenna 20a and antenna 20b. Furthermore, the structure other than this is the same as that of the plasma processing apparatus 1 of Embodiment 1, therefore, description is omitted. Regarding antennas 20a and 20b, their bending directions are different. Specifically, antenna 20a bends in the negative direction of the Y-axis, but antenna 20b bends in the positive direction of the Y-axis. Thus, multiple antennas with different bending or folding directions can be arranged along the mounting surface of the stage 30.

[0033] Figure 11 is a plan view of the plasma processing apparatus 3 of Embodiment 2 viewed from the Z-axis direction. The plasma processing apparatus 3 includes three antennas 20: antenna 20c, antenna 20d, and antenna 20e. In this example, antenna 20c is bent in the negative direction of the Y-axis, antenna 20d is a straight antenna without bending, and antenna 20e is bent in the positive direction of the Y-axis. Thus, a straight antenna is arranged in the center, while bent or folded antennas are arranged on both sides. In this way, the plasma density in the end region HR of the antenna group can be uniformly distributed over a wide range.

[0034] FIG12 is a plan view of the plasma processing apparatus 4 of Embodiment 2 viewed from the Z-axis direction. The plasma processing apparatus 4 includes four antennas 20, from antenna 20f to antenna 20i. The ends ER of the four antennas are bent, and the direction and angle of bending are the same for all four. In this way, by arranging multiple antennas with the same bending direction and angle at equal intervals, the plasma density of the end region HR of the antenna group can be uniformly distributed over a wide range. In this way, by uniformly distributing the plasma density of the end region HR of the antenna group over a wide range, while moving the object to be processed along the sample scanning direction shown in FIG12, a wide range of the object to be processed can be uniformly processed.

[0035] As described above, the number of antennas and the combination of the bending or folding directions and angles of the multiple antennas are arbitrary. Therefore, the optimal configuration conditions for plasma homogenization can be explored by changing the arrangement of the multiple antennas with bent or folded ends, depending on the size or output of the antenna. The antenna of this embodiment has a relatively simple structure in which only the ends of the linear antennas are bent or folded. As long as multiple antennas with this structure are arranged, a plasma processing apparatus capable of performing uniform plasma processing at a relatively low cost can be provided.

[0036] [Embodiment 3] Next, a plasma treatment method for a workpiece using the plasma treatment apparatus 1 to plasma treatment apparatus 4 described in Embodiments 1 and 2 will be described. FIG13 is a flowchart showing the flow of the plasma treatment method S1 of this embodiment.

[0037] As shown in FIG13, the plasma processing method S1 includes steps S11 and S12. Step S11 is a step of generating plasma by energizing a straight antenna 20, whose end is bent or folded when viewed from a direction orthogonal to the mounting surface of the stage 30. Step S11 is executed by the control unit 40 of the plasma processing apparatus.

[0038] Step S12 is a step of moving the stage 30 on which the object to be processed is placed in a direction orthogonal to the direction of the straight section of the antenna 20 and parallel to the placement surface. Step S12 is executed by the control unit 40 of the plasma processing apparatus.

[0039] According to the plasma treatment method S1 described above, the decrease in plasma density near the side wall of the vacuum container 60 can be suppressed, thereby making the plasma density in the treatment chamber 64 uniform without causing an overall decrease in plasma density. Therefore, the object to be treated by the plasma treatment method S1 can be treated uniformly.

[0040] [Implementation example using software] The functions of plasma processing apparatus 1 to plasma processing apparatus 4 (hereinafter referred to as "apparatus") can be implemented by a program, which is a program for enabling a computer to function as the apparatus and for enabling a computer to function as the control unit 40 of the apparatus.

[0041] At this time, the device includes a computer having at least one control device (e.g., processor 41) and at least one memory device (e.g., memory 42) as hardware for executing the program. By executing the program using the control device and memory device, the functions described in the various embodiments are realized.

[0042] The program may also be recorded on one or more recording media that are not temporary and are computer-readable. This recording media may or may not be included in the device. In the latter case, the program may also be supplied to the device via any wired or wireless transmission medium.

[0043] Furthermore, some or all of the functions of each control block can also be implemented by logic circuits. For example, integrated circuits that form the logic circuits that enable the functions of each control block are also included within the scope of this disclosure. In addition, the functions of each control block can also be implemented by a quantum computer, for example.

[0044] (Summary) In order to solve the aforementioned problem, the plasma processing apparatus of the first aspect disclosed herein includes: a processing chamber; a stage disposed inside the processing chamber and on which the object to be processed is placed; and one or more antennas that generate a magnetic field for generating plasma inside the processing chamber, the antennas being configured such that, when viewed from a direction orthogonal to the mounting surface of the stage, the ends of the linear antennas are bent or folded.

[0045] According to the structure, by suppressing the decrease in plasma density in the portion near the side wall of the vacuum container, the overall plasma density can be homogenized without decreasing.

[0046] The second aspect disclosed herein is that in the plasma processing apparatus of the first aspect, the antenna includes a straight portion extending in a straight line along the mounting surface of the stage, a power supply side end of the antenna, namely a first end, and a ground side end of the antenna, namely a second end, and has the following structure, namely, when viewed from a direction orthogonal to the mounting surface of the stage, the first end and the second end are bent or folded relative to the straight portion.

[0047] According to the structure, by suppressing the decrease in plasma density at the portion near the opposing sidewalls of the vacuum container, the overall plasma density can be homogenized without decreasing.

[0048] The third aspect disclosed herein is in the plasma processing apparatus of the first or second aspect, wherein the antenna is structured such that, when viewed from a direction orthogonal to the mounting surface of the stage, the end of the linear antenna is bent or folded outside the processing chamber.

[0049] According to the structure described above, the structure of the vacuum container can be simplified by placing the antenna outside the vacuum container.

[0050] The fourth aspect disclosed herein is in any of the plasma processing apparatuses of the first to third aspects, wherein the antenna has the following structure, namely, that its end is bent or folded in a plane parallel to the mounting surface of the stage.

[0051] According to the structure, the plasma density can be homogenized in a region inside the processing chamber that is parallel to the mounting surface of the stage, thereby allowing for uniform processing of the object to be processed.

[0052] The fifth aspect disclosed herein is in any of the first to fourth aspects of the plasma processing apparatus, wherein the antenna is structured such that, when viewed from the direction along the mounting surface of the stage, it is further bent or folded in a direction orthogonal to the mounting surface of the stage.

[0053] According to the structure, the plasma density can be further homogenized in the region inside the processing chamber that is parallel to the mounting surface of the stage, so that the object to be processed can be processed uniformly.

[0054] The sixth aspect of this disclosure is that in any of the plasma processing apparatuses of the first to fifth aspects, a plurality of said antennas of different sizes, bent or folded, are arranged in a direction along the mounting surface of said stage.

[0055] According to the structure, the plasma density can be further homogenized in the region inside the processing chamber that is parallel to the mounting surface of the stage, so that the object to be processed can be processed uniformly.

[0056] The seventh aspect disclosed herein is that in any of the plasma processing apparatuses of the first to sixth aspects, a plurality of said antennas with different bending or folding directions are arranged along the mounting surface of said stage.

[0057] According to the structure, the plasma density can be further homogenized in the region inside the processing chamber that is parallel to the mounting surface of the stage, so that the object to be processed can be processed uniformly.

[0058] The eighth aspect disclosed herein is a plasma processing apparatus in any of the first to seventh aspects, further comprising: a drive unit that moves the stage along a direction orthogonal to the direction of the straight section of the antenna and along the direction of the mounting surface.

[0059] According to the structure, by moving the object to be processed, a large object to be processed can be processed uniformly using a small number of antennas.

[0060] The ninth aspect of the plasma processing method disclosed herein is a method for performing plasma processing on a processing object placed on a stage. The plasma processing method includes the following steps: generating plasma by energizing a straight antenna whose end is bent or folded when viewed from a direction orthogonal to the mounting surface of the stage; and moving the stage on which the processing object is placed along a direction orthogonal to the direction of the straight portion of the antenna and parallel to the mounting surface.

[0061] According to the structure, by suppressing the decrease in plasma density in the portion near the side wall of the vacuum container, the overall plasma density can be homogenized without decreasing.

[0062] This disclosure is not limited to the various embodiments described. Various changes can be made within the scope shown in the request. Embodiments obtained by appropriately combining the technical components disclosed in different embodiments are also included in the technical scope of this disclosure. [Simplified Explanation of the Diagram]

[0010] FIG1 is a schematic perspective view of the plasma processing apparatus 1 according to Embodiment 1 of this disclosure. FIG2 is a block diagram showing the main structure of the plasma processing apparatus 1. FIG3 is a cross-sectional view of the XZ section near the center of the vacuum container viewed from the negative Y-axis direction. FIG4 is a plan view of the vacuum container and the antenna viewed from the upper part, i.e., the negative Z-axis direction. FIG5 is a schematic diagram comparing the difference in plasma density at the ends of an antenna with both ends bent and a straight antenna without both ends bent. FIG6 is a plan view of a plasma processing apparatus with an antenna having a shape in which the first end and the second end are bent, viewed from the Z-axis direction. FIG7 is a cross-sectional view of a plasma processing apparatus with an antenna having its ends also bent in the Z-axis direction. FIG8 is a schematic diagram showing an example of the degree of bending or folding (angle θ) of the antenna ends. FIG9 is a schematic diagram showing an example of the degree of bending when the antenna is bent in the Z-axis direction. FIG10 is a plan view of the plasma processing apparatus 2 according to Embodiment 2, viewed from the Z-axis direction. Figure 11 is a plan view of the plasma treatment apparatus 2 of Embodiment 3 viewed from the Z-axis direction. Figure 12 is a plan view of the plasma treatment apparatus 2 of Embodiment 4 viewed from the Z-axis direction. Figure 13 is a flowchart showing the process of the plasma treatment method S1 of Embodiment 3.

Claims

1. A plasma treatment apparatus, comprising: Processing room; A platform, disposed inside the processing chamber, on which the object to be processed is placed; And one or more antennas that generate a magnetic field for producing plasma inside the processing chamber. The antenna includes a straight portion extending in a straight line along the mounting surface of the stage, a power supply end of the antenna (i.e., a first end), and a grounding end of the antenna (i.e., a second end). The first end and the second end are bent or folded relative to the straight portion when viewed from a direction orthogonal to the mounting surface of the stage. The first end and the second end respectively correspond to regions near the two side walls of the processing chamber, and the length of the first end and the second end is 3% to 20% of the total length of the antenna.

2. The plasma treatment apparatus as claimed in claim 1, wherein, The antenna is a structure in which, when viewed from a direction orthogonal to the mounting surface of the platform, the ends of a straight antenna are bent or folded outside the processing chamber.

3. The plasma treatment apparatus as described in claim 1 or 2, wherein, The antenna is a structure with its ends bent or folded in a plane parallel to the mounting surface of the platform.

4. The plasma treatment apparatus as described in claim 1 or 2, wherein, The antenna is a structure that, when viewed from the direction along the mounting surface of the platform, is further bent or folded in a direction orthogonal to the mounting surface of the platform.

5. The plasma treatment apparatus as described in claim 1 or 2, wherein, Multiple antennas of varying sizes, bent or folded, are arranged along the mounting surface of the stage.

6. The plasma treatment apparatus as claimed in claim 1 or 2, wherein, Multiple antennas with different bending or folding directions are arranged along the mounting surface of the stage.

7. The plasma processing apparatus as described in claim 1 or 2, further comprising: The driving unit moves the stage along a direction orthogonal to the direction of the straight section of the antenna and along the direction of the mounting surface.

8. A plasma processing method for plasma processing an object placed on a stage, the plasma processing method comprising the following steps: energizing an antenna to generate plasma; and moving the stage on which the object is placed along a direction orthogonal to the direction of a straight portion of the antenna and parallel to the mounting surface, wherein the antenna comprises a straight portion extending in a straight line along the mounting surface of the stage, a power supply end of the antenna (i.e., a first end), and a grounding end of the antenna (i.e., a second end), and wherein, when viewed from a direction orthogonal to the mounting surface of the stage, the first end and the second end have a structure that is bent or folded relative to the straight portion, the first end and the second end respectively correspond to regions near the side walls of the processing chamber, and the length of the first end and the second end is 3% to 20% of the total length of the antenna.

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