Package substrate and fabricating method thereof

TWI938955BActive Publication Date: 2026-09-11AALTOSEMI INC
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Patent Information

Application Number
TW114115003
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2025-03-21
Filing Date
2025-04-21
Publication Date
2026-09-11
Estimated Expiration
2045-04-20

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  • Figure TWG2TB001910523_003
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Abstract

An encapsulation substrate comprises a plurality of conductive pillars electrically connected to a wiring layer on a semiconductor substrate. Molten glass is then wrapped around the wiring layer and conductive pillars, and the molten glass is subsequently cured to form a glass layer. A circuit layer electrically connected to the plurality of conductive pillars is formed on the glass layer. Therefore, by forming a glass layer from molten glass, the material properties of the semiconductor substrate are made more similar, thereby improving the adhesion between the substrate and the glass layer during layer-addition processes.
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Claims

1. A packaging substrate, comprising: A board having a wiring layer is a semiconductor board, and a plurality of conductive vias electrically connected to the wiring layer are formed therein; a plurality of conductive pillars are formed on the wiring layer and electrically connected to the wiring layer; a glass layer is formed on the board to cover the wiring layer and the conductive pillars, and the glass layer is formed by cooling and solidifying molten glass; and a circuit layer is formed on the glass layer and electrically connected to the plurality of conductive pillars.

2. The packaging substrate as described in claim 1, wherein, The plate system is made of quartz glass.

3. The packaging substrate as described in claim 1, wherein, The glass system includes borosilicate glass or lead-free glass of the bismuth series.

4. The packaging substrate as described in claim 1, wherein, The melting point of this glass layer is 700 to 850°C.

5. The packaging substrate as described in claim 1, wherein, The glass transition temperature of the glass layer is 300 to 400°C lower than that of the plate.

6. A method for manufacturing a packaging substrate, comprising: A board with a wiring layer is provided, which is a semiconductor board, and a plurality of conductive vias electrically connected to the wiring layer are formed in the board; a plurality of conductive pillars electrically connected to the wiring layer are formed on the wiring layer to obtain a substrate structure. Molten glass is formed on the substrate structure to cover the wiring layer and conductive pillars; the molten glass is cured to form a glass layer; and a wiring layer electrically connected to the plurality of conductive pillars is formed on the glass layer.

7. The method for manufacturing the packaging substrate as described in claim 6, wherein, The plate system is made of quartz glass.

8. The method for manufacturing the packaging substrate as described in claim 6, wherein, This molten glass system includes borosilicate glass or lead-free glass of the bismuth series.

9. The method for manufacturing the packaging substrate as described in claim 6, wherein, The melting point of this molten glass is 700 to 850°C.

10. The method for manufacturing the packaging substrate as described in claim 6, wherein, The glass transition temperature of the glass layer is 300 to 400°C lower than that of the plate.

11. The method for manufacturing the packaging substrate as described in claim 6, wherein, The molten glass system is solidified into this glass layer by cooling.

12. The method for manufacturing the packaging substrate as described in claim 6, wherein, The step of solidifying the molten glass also includes annealing at 200 to 300°C to relieve stress in the formed glass layer.

Citation Information

Patent Citations

  • Packaged substrate and manufacturing method thereof

    TW202203331A

  • Substrate package with glass dielectric

    US20230187205A1

  • Glass package substrate with chip disaggregation interface

    US20240355752A1