Lcm structure with high-k material and fabricating method of the same

Abstract

A light-controlled metasurface structure with a high-dielectric material includes a dielectric layer, a first metal railing and a second metal railing disposed on the dielectric layer, a gap disposed between the first metal railing and the second metal railing, a first protective layer covering and directly contacting the sidewalls and top surface of the first metal railing, a second protective layer covering and directly contacting the sidewalls and top surface of the second metal railing, a high-dielectric material layer covering the first protective layer, the second protective layer and the top surface of the dielectric layer, the dielectric constant of the high-dielectric material layer being greater than 10, and a plurality of liquid crystals filling the gap.

Claims

1. A light control metasurface (LCM) structure with a high dielectric material, comprising: a dielectric layer; a first metal rail and a second metal rail disposed on the dielectric layer; a gap disposed between the first metal rail and the second metal rail; a first protective layer covering and directly contacting the sidewalls and top surface of the first metal rail; a second protective layer covering and directly contacting the sidewalls and top surface of the second metal rail; a high dielectric material layer covering the first protective layer, the second protective layer, and the top surface of the dielectric layer, wherein the dielectric constant of the high dielectric material layer is greater than 10; and a plurality of liquid crystals filling the gap.

2. The photosensitive metasurface structure with a high dielectric material as described in claim 1, wherein the high dielectric material layer comprises alumina, zirconium oxide, hafnium oxide, barium strontium titanate (BST), lead zirconate titanate (PZT), zirconium silicate (ZrSiO4), hafnium silicon oxide (HfSiO2), hafnium silicon oxynitride (HfSiON), or tantalum oxide.

3. The photosensitive metasurface structure with a high dielectric material as described in claim 1, wherein the first protective layer comprises aluminum nitride, silicon nitride, nitrogen-doped silicon carbide (NDC), or copper nitride (Cu3N), and the second protective layer comprises aluminum nitride, silicon nitride, nitrogen-doped silicon carbide, or copper nitride.

4. The photosensitive metasurface structure with a high dielectric material as described in claim 1, wherein when the first protective layer and the second protective layer are copper nitride, the first protective layer and the second protective layer do not contact the upper surface of the dielectric layer between the first metal railing and the second metal railing.

5. The photosensitive metasurface structure with a high dielectric material as described in claim 1, wherein the first protective layer and the second protective layer extend to the upper surface of the dielectric layer between the first metal railing and the second metal railing, and the first protective layer and the second protective layer are connected.

6. The photosensitive metasurface structure with a high dielectric material as described in claim 1, wherein the thickness of the first protective layer is greater than 2 nanometers and the thickness of the second protective layer is greater than 2 nanometers.

7. The photosensitive metasurface structure having a high dielectric material as described in claim 1, wherein the materials of the first metal railing and the second metal railing each comprise copper, aluminum, or tungsten.

8. The photosensitive metasurface structure having a high dielectric material as described in claim 1, wherein the first metal railing and the second metal railing each contain hydrogen atoms.

9. A method for fabricating a light control metasurface (LCM) structure with a high dielectric material, comprising: providing a dielectric layer, a first metal rail and a second metal rail disposed on the dielectric layer, and a gap disposed between the first metal rail and the second metal rail; performing a metal oxide removal process to remove metal oxides on the surfaces of the first metal rail and the second metal rail; after the metal oxide removal process, performing a protective layer process to form a first protective layer and a second protective layer, the first protective layer covering and directly contacting the sidewalls and top surface of the first metal rail, and the second protective layer covering and directly contacting the sidewalls and top surface of the second metal rail; forming a high dielectric material layer covering the first protective layer, the second protective layer and the top surface of the dielectric layer, wherein the dielectric constant of the high dielectric material layer is greater than 10; and providing a plurality of liquid crystals to fill the gap.

10. A method for fabricating a light-controlled metasurface structure with a high-dielectric material as described in claim 9, wherein the high-dielectric material layer comprises alumina, zirconium oxide, hafnium oxide, barium strontium titanate (BST), lead zirconate titanate (PZT), zirconium silicate (ZrSiO4), hafnium silicon oxide (HfSiO2), hafnium silicon oxynitride (HfSiON), or tantalum oxide.

11. A method for fabricating a light-controlled metasurface structure with a high dielectric material as described in claim 9, wherein the first protective layer comprises aluminum nitride, silicon nitride, nitrogen-doped silicon carbide (NDC), or copper nitride (Cu3N), and the second protective layer comprises aluminum nitride, silicon nitride, nitrogen-doped silicon carbide, or copper nitride.

12. A method for fabricating a light-controlled metasurface structure with a high dielectric material as described in claim 9, wherein when the first protective layer and the second protective layer are copper nitride, the upper surface of the dielectric layer between the first metal railing and the second metal railing is not covered by the first protective layer and the second protective layer.

13. A method for fabricating a light-controlled metasurface structure having a high dielectric material as described in claim 9, wherein the first protective layer and the second protective layer extend to the upper surface of the dielectric layer between the first metal railing and the second metal railing, and the first protective layer and the second protective layer are connected.

14. A method for fabricating a light-controlled metasurface structure having a high dielectric material as described in claim 9, wherein the materials of the first metal railing and the second metal railing each comprise copper, aluminum, or tungsten.

15. A method for fabricating a light-controlled metasurface structure with a high dielectric material as described in claim 9, wherein when the first protective layer and the second protective layer are copper nitride, the formation of the first protective layer and the second protective layer comprises: performing a plasma process to nitride the first metal railing and the second metal railing with a nitrogen-containing gas as the reactant gas.

16. A method for fabricating a light-controlled metasurface structure having a high dielectric material as described in claim 9, wherein when the first protective layer and the second protective layer are copper nitride, the fabrication temperature of the high dielectric material layer is less than 350°C.

17. A method for fabricating a photosensitive metasurface structure having a high dielectric material as described in claim 9, wherein the metal oxide removal process and the protective layer process are performed in the same reaction chamber.

18. A method for fabricating a photosensitive metasurface structure having a high dielectric material as described in claim 9, wherein there are no other processes between the metal oxide removal process and the protective layer process.

19. A method for fabricating a photosensitive metasurface structure having a high dielectric material as described in claim 9, wherein the metal oxide removal process comprises using ammonia and hydrogen as reactive gases to form a plasma to remove metal oxides from the surfaces of the first metal railing and the second metal railing.

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