Package structure and method forming thereof

Abstract

The package structure includes a power module. The power module includes a first conductive substrate, a wafer, and at least one conductive connector. The wafer is on the first conductive substrate, wherein the wafer includes metal pads and a bonding layer, the bonding layer being on the metal pads. At least one conductive connector is disposed on the bonding layer, wherein any of the at least one conductive connector includes a pillar and a first bonding layer, the first bonding layer being between the pillar and the bonding layer.

Claims

1. A packaging structure comprising: a power module including: a first conductive substrate; a wafer on the first conductive substrate, wherein the wafer includes: a metal pad; and a bonding layer on the metal pad; at least one pre-formed conductive bond disposed on the bonding layer, and the wafer being between the at least one pre-formed conductive bond and the first conductive substrate, wherein any of the at least one pre-formed conductive bond includes: a pillar; and a first bonding layer being between the pillar and the bonding layer.

2. The encapsulation structure as described in claim 1, wherein the width of the first bonding layer is greater than or equal to the width of the column.

3. The packaging structure as claimed in claim 1, wherein the at least one pre-formed conductive bonding body further comprises: a second bonding layer between the pillar and the first bonding layer.

4. The packaging structure as described in claim 1 further includes: a circuit board surrounding the power module.

5. The packaging structure as claimed in claim 1, wherein the first bonding layer is made of tin, silver, copper, gold, lead, indium, bismuth, zinc, antimony, their respective alloys, or a combination of at least two thereof, and the bonding layer is made of nickel, copper, silver, gold, or a combination of at least two thereof.

6. A packaging structure comprising: a power module including: a first conductive substrate; a wafer on the first conductive substrate, wherein the wafer includes: a metal pad; and a bonding layer on the metal pad; at least one conductive connector disposed on the bonding layer, and the wafer between the at least one conductive connector and the first conductive substrate, wherein any of the at least one conductive connector includes: a pillar; and a first bonding layer between the pillar and the bonding layer; a circuit board surrounding the power module; an interconnect structure on the circuit board and the power module; and a semiconductor element on the interconnect structure and electrically connected to the wafer of the power module via the interconnect structure.

7. A method of forming a package structure, comprising: forming a power module, comprising: bonding a first side of a wafer to a first conductive substrate, the wafer including a metal pad and a bonding layer formed on the metal pad; pre-forming at least one conductive connector, wherein the conductive connector includes: a pillar; and a first bonding layer at one end of the pillar; and placing the at least one conductive connector on a second side of the wafer, the second side opposite to the first side, and the first bonding layer of the at least one conductive connector contacting the bonding layer of the wafer.

8. The method as claimed in claim 7, wherein the at least one conductive bonding body further comprises: a second bonding layer between the pillar and the first bonding layer.

9. A method of forming a package structure, comprising: forming a power module, comprising: bonding a wafer to a first conductive substrate, the wafer including a metal pad and a bonding layer formed on the metal pad; forming at least one conductive connector, wherein the conductive connector includes: a pillar; and a first bonding layer at one end of the pillar; bonding a semiconductor element to a second conductive substrate adjacent to the first conductive substrate; and placing the at least one conductive connector on the wafer, wherein the first bonding layer of the at least one conductive connector contacts the bonding layer of the wafer, wherein when the at least one conductive connector is placed on the wafer, one of the at least one conductive connectors is electrically connected to the semiconductor element and the wafer.

10. A method of forming a package structure, comprising: forming a power module, comprising: bonding a wafer to a first conductive substrate, the wafer including a metal pad and a bonding layer formed on the metal pad; forming at least one conductive connector, wherein the conductive connector includes: a pillar; and a first bonding layer at one end of the pillar; and placing the at least one conductive connector on the wafer, wherein the first bonding layer of the at least one conductive connector contacts the bonding layer of the wafer; forming the power module in a circuit board such that the circuit board surrounds the power module; and forming an interconnect structure on the circuit board and the power module.

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