Capacitor structure

Abstract

A capacitor structure is provided. The capacitor structure includes a bottom electrode, a first barrier layer, an insulator, a second barrier layer, and a top electrode. The first barrier layer is disposed on the bottom electrode. The insulator is disposed on the first barrier layer. The second barrier layer is disposed on the insulator. The top electrode is disposed on the second barrier layer. The first and second barrier layers are configured to reduce the diffusion of oxygen and / or chlorine from or into the insulator.

Claims

1. A capacitor structure, comprising: Bottom electrode; A first barrier layer is disposed on the bottom electrode; An insulator is disposed on the first barrier layer; A second barrier layer is disposed on the insulator; And a top electrode, disposed on the second barrier layer, wherein the first barrier layer and the second barrier layer are configured to reduce the diffusion of oxygen and / or chlorine from the insulator or the diffusion of oxygen and / or chlorine into the insulator, wherein the composition of the first barrier layer includes Ti, O, N and Cl, and the chlorine concentration of the first barrier layer is in the range of 0.2 at% to 0.4 at%.

2. The capacitor structure as claimed in claim 1, wherein the composition of the bottom electrode comprises Ti, N, and Cl.

3. The capacitor structure as claimed in claim 2, wherein the chlorine concentration of the bottom electrode is higher than the chlorine concentration of the first barrier layer.

4. The capacitor structure as claimed in claim 2, wherein the chlorine concentration of the bottom electrode is in the range of 0.8 at% to 1.2 at%.

5. The capacitor structure as claimed in claim 1, wherein the composition of the bottom electrode further comprises O, and the oxygen concentration of the bottom electrode is lower than the oxygen concentration of the first barrier layer.

6. The capacitor structure as claimed in claim 5, wherein the oxygen concentration of the bottom electrode is less than 20 at.

7. The capacitor structure as claimed in claim 1, wherein the thickness of the first barrier layer is in the range of 5 Å to 20 Å.

8. The capacitor structure as claimed in claim 1, wherein the chlorine concentration of the top electrode is higher than the chlorine concentration of the second barrier layer.

9. The capacitor structure as claimed in claim 8, wherein the oxygen concentration of the top electrode is lower than the oxygen concentration of the second barrier layer.

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