Method for manufacturing stress-balanced semiconductor device

Abstract

This application provides a method for manufacturing a semiconductor device. The method includes the following steps: forming a stress-compensating film on a first surface of a substrate; and forming a mask stack on a second surface of the substrate. The first surface and the second surface are opposite to each other. Both the mask stack and the stress-compensating film apply compressive stress to the substrate, or both apply tensile stress to the substrate.

Claims

1. A method for manufacturing a semiconductor device, comprising: A stress-compensating thin film is formed on a first surface of a substrate; A mask stack is formed on a second surface of the substrate, wherein the first surface is opposite to the second surface, wherein both the mask stack and the stress compensation film apply compressive stress to the substrate or both apply tensile stress to the substrate, wherein the stress compensation film comprises at least one material selected from the group consisting of silicon oxide, silicon nitride, silicon oxide nitride, boron silicon and carbon.

2. The method of claim 1, wherein forming the stress compensation film on the first surface of the substrate comprises: The stress compensation film is formed through a diffusion process, wherein a dummy film is formed simultaneously with the stress compensation film under the mask stack and on the second surface of the substrate, wherein the dummy film has the same material as the stress compensation film.

3. The method of claim 1, wherein forming the stress compensation film on the first surface of the substrate comprises: A TEOS oxide layer is deposited on the first surface of the substrate as the stress compensation film using tetraethyl orthosilicate (TEOS) as a precursor.

4. The method of claim 1, wherein both the mask stack and the stress compensation film apply the compressive stress to the substrate, wherein the mask stack comprises at least one material selected from the group consisting of carbon and amorphous silicon.

5. The method of claim 1, wherein both the mask stack and the stress compensation film apply the compressive stress to the substrate, wherein forming the mask stack on the second surface of the substrate comprises: A first double-layer structure is formed on the second surface of the substrate, wherein the first double-layer structure includes a first silicon oxide layer and a silicon nitride layer on the first silicon oxide layer; a first carbon hard mask is formed on the first double-layer structure; a second double-layer structure is formed on the first carbon hard mask, wherein the second double-layer structure includes an amorphous silicon layer and a second silicon oxide layer on the amorphous silicon layer; and a first sub-mask stack having alternating anti-reflecting coating (ARC) hard masks and second carbon hard masks is formed on the second double-layer structure.

6. The method as described in claim 5, further comprising: Etch the first sub-mask stack; And using the first submask stack as a photomask to etch the second double-layer structure, such that the second double-layer structure forms a plurality of fins parallel to each other.

7. The method as described in claim 6, further comprising: A second sub-mask stack with alternating anti-reflective coating hard mask and second carbon hard mask is formed on the second double-layer structure; Etch the second sub-mask stack; Use the second sub-mask stack as a photomask to etch the second double-layer structure to form a plurality of first cut regions on the odd-numbered columns of the plurality of fins; Form a third sub-mask stack having alternating anti-reflective coating hard masks and the second carbon hard masks on the second double-layer structure; Etch the third sub-mask stack; And using the third submask stack as a photomask to etch the second double-layer structure to form a plurality of second cut regions on the even-numbered columns of the plurality of fins.

8. The method of claim 1, wherein both the mask stack and the stress compensation film apply the tensile stress to the substrate, wherein the mask stack comprises silicon boron.

9. The method of claim 1, wherein both the mask stack and the stress-compensating film apply the tensile stress to the substrate, wherein forming the mask stack on the second surface of the substrate comprises: A silicon-boron layer is formed on the second surface of the substrate; A TEOS oxide layer is formed on the silicon boron layer; A carbon hard mask is formed on the TEOS oxide layer; and an anti-reflective coating hard mask is formed on the carbon hard mask.

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