A photoresist stripping liquid capable of protecting gaas and pi substrates and application thereof

Abstract

This invention belongs to the field of photoresist stripping technology after etching in semiconductor manufacturing processes, and particularly relates to a photoresist stripping solution capable of protecting GaAs and PI substrates and its application. The photoresist stripping solution provided by this invention comprises a cyclic organic amine, an alcohol ether organic solvent, a diol, and an azole corrosion inhibitor; the cyclic organic amine has the chemical formula shown in formula (I), where R1 and R2 are independently -H, -CH3, -NH2, -C6H5, -CH3C6H5, -CH3CH2OH, or -CH3CH2NH2, and R3 is -H or -CH3; the diol is an aliphatic diol containing 2 to 6 carbon atoms; the photoresist stripping solution does not contain any of the following: water, aprotic polar solvents, oxidants, halogen compounds, hydroxylamine, quaternary ammonium bases, and inorganic bases. The photoresist stripping solution provided by this invention does not corrode GaAs and PI substrates and has excellent photoresist dissolving ability.

Description

Technical Field

[0001] This invention belongs to the field of photoresist stripping technology after etching in semiconductor manufacturing processes, and particularly relates to a photoresist stripping solution that can protect GaAs and PI substrates and its application. Prior Technology

[0002] Integrated circuits are manufactured layer by layer using a process characterized by photolithography. During the photoresist removal process, the polyimide (PI) layer can serve as both a photoresist layer and an electrical insulating layer, making it highly susceptible to corrosion when immersed in photoresist stripping solution. Gallium arsenide (GaAs) layers, especially those doped with aluminum, are also highly susceptible to corrosion by photoresist stripping solution.

[0003] Currently available photoresist stripping solutions containing aprotic polar solvents are not compatible with both PI and GaAs. Therefore, it is essential to develop a photoresist stripping solution that provides effective cleaning of carbonized photoresist while simultaneously protecting both PI and GaAs. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide a photoresist stripping solution that can protect GaAs and PI substrates and its application. The photoresist stripping solution provided by the present invention does not corrode GaAs and PI substrates and has excellent photoresist dissolving ability.

[0005] This invention provides a photoresist stripping solution capable of protecting GaAs and PI substrates, comprising cyclic organic amines, alcohol ether organic solvents, diols, and azole corrosion inhibitors; The chemical formula of the cyclic organic amine is shown in formula (I): Formula (I); In formula (I), R1 and R2 are each independently -H, -CH3, -NH2, -C6H5, -CH3C6H5, -CH3CH2OH or -CH3CH2NH2, and R3 is -H or -CH3; The diol is an aliphatic diol containing 2 to 6 carbon atoms; The photoresist stripping solution does not contain any of the following: water, aprotic polar solvents, oxidants, halogen compounds, hydroxylamine, quaternary ammonium bases, and inorganic bases.

[0006] Preferably, the cyclic organic amine is one or more selected from 1-(2-hydroxyethyl)piperazine, 1-(2-aminoethyl)piperazine, 1-(2-hydroxyethyl)methylpiperazine, 2-methylpiperazine, 1-methylpiperazine, 4-amino-1-methylpiperazine, 1-benzylmethylpiperazine, and 1-phenylpiperazine. And / or, the alcohol ether organic solvent is one or more selected from diethylene glycol methyl ether, dipropylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol propyl ether, diethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol butyl ether, tripropylene glycol butyl ether, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, ethylene glycol phenyl ether, propylene glycol phenyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol propyl ether, diethylene glycol butyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol butyl ether, polyoxyethylene cumylphenol ether, and alkylphenol polyoxyethylene ether; And / or, the diol is one or more selected from diethylene glycol, dipropylene glycol, 1,2-propanediol, 1,3-propanediol, ethylene glycol, 2,3-butanediol, neopentyl glycol, isohexanediol, 1,6-hexanediol, 1,2-hexanediol, 1,2-hexanediol, and 2-butyn-1,4-diol; And / or, the azole corrosion inhibitor is one or more of benzotriazole, benzimidazole, benzothiazole, benzoxaazole, 1,2,4-triazole, methylbenzotriazole, 5-methyltetrazazole, 5-mercapto-1-phenyltetrazazole, 4-amino-1,2,4-triazole, 5-amino-1H-tetrazazole, alkylimidazole, 2-mercaptobenzimidazole, 3-amino-1,2,4-triazole, 2-mercapto-5-methylbenzimidazole, 2-aminobenzimidazole, 2-aminobenzothiazole, 2-mercaptobenzimidazole, 5-methylbenzotriazole, 1-hydroxybenzotriazole, and 1-[bis(hydroxyethyl)aminoethyl]methylbenzotriazole; And / or, the aprotic polar solvent is one or more of N-methylpyrrolidone, dimethyl sulfoxide, N,N-dimethylacetamide, N,N-dimethylmethamide, cyclobutane, acetone, hexamethylphosphonic triamine, acetonitrile, and 1,3-dimethyl-2-imidazolinone, the oxidant is a peroxide, the halogen compound is a fluoride, and the quaternary ammonium base is one or more of tetramethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, benzyltrimethylammonium hydroxide, choline, (2-hydroxyethyl)trimethylammonium hydroxide, and tris(2-hydroxyethyl)methylammonium hydroxide.

[0007] Preferably, the azole corrosion inhibitor has an electronic precursor group, which is one or more of methyl, amino, hydroxy, mercapto, phenyl, and alkyl groups.

[0008] Preferably, the content of the cyclic organic amine in the photoresist stripping solution is 5-30 wt%. And / or, the content of the alcohol ether organic solvent in the photoresist stripping solution is 25~60wt%; And / or, the content of the diol in the photoresist stripping solution is 30~40wt%; And / or, the content of the azole corrosion inhibitor in the photoresist stripping solution is less than 0.5 wt%.

[0009] Preferably, the content of the cyclic organic amine in the photoresist stripping solution is 10~30 wt%; And / or, the content of the alcohol ether organic solvent in the photoresist stripping solution is 30~56wt%; And / or, the content of the diol in the photoresist stripping solution is 31~40wt%; And / or, the content of the azole corrosion inhibitor in the photoresist stripping solution is 0.01~0.3wt%.

[0010] Preferably, the photoresist stripping solution comprises: 53.3 wt% diethylene glycol butyl ether, 31.5 wt% ethylene glycol, 15 wt% 1-(2-aminoethyl)piperazine, and 0.2 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 53.3 wt% diethylene glycol methyl ether, 31.5 wt% ethylene glycol, 15 wt% 1-(2-hydroxyethyl)piperazine, and 0.2 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 50.78 wt% dipropylene glycol methyl ether, 32 wt% diethylene glycol, 17 wt% 1-(2-aminoethyl)piperazine, and 0.22 wt% 5-mercapto-1-phenyltetrazazole; Alternatively, the photoresist stripping solution comprises: 50.78 wt% dipropylene glycol methyl ether, 32 wt% diethylene glycol, 17 wt% 1-(2-hydroxyethyl)methylpiperazine, and 0.22 wt% 5-amino-1H-tetrazole; Alternatively, the photoresist stripping solution comprises: 57.7 wt% diethylene glycol butyl ether, 34 wt% ethylene glycol, 8 wt% 1-(2-hydroxyethyl)methylpiperazine, and 0.3 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 47.7 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 12 wt% 1-(2-hydroxyethyl)piperazine, and 0.3 wt% 1-phenyl-5-mercaptotetrazole; Alternatively, the photoresist stripping solution comprises: 42.9 wt% diethylene glycol butyl ether, 40 wt% ethylene glycol, 17 wt% 1-(2-hydroxyethyl)methylpiperazine, and 0.1 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 37.7 wt% dipropylene glycol methyl ether, 32 wt% ethylene glycol, 30 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 48.2 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 11.5 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 38.2 wt% diethylene glycol butyl ether, 31.5 wt% ethylene glycol, 30 wt% 1-(2-hydroxyethyl)piperazine, and 0.3 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 48.2 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 11.5 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% benzotriazole; Alternatively, the photoresist stripping solution comprises: 48.2 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 11.5 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% benzimidazole.

[0011] Preferably, the photoresist stripping solution further includes surfactants and / or pH adjusters.

[0012] Preferably, the surfactant is one or more of nonionic surfactants, anionic surfactants, and cationic surfactants; And / or, the pH adjuster is one or more of citric acid, malic acid, maleic acid, N,N-dimethylethanolamine, diethylamine, acidic amino acids, and basic amino acids.

[0013] This invention provides a method for removing photoresist, comprising the following steps: The wafer to which the photoresist is to be removed is brought into contact with the photoresist stripping solution described in the above technical solution to remove the photoresist; After the photoresist removal is completed, the photoresist stripping solution is removed from the wafer.

[0014] Preferably, the substrate of the wafer comprises one or more of Al, Ti, Cu, GaAs and PI.

[0015] Compared with prior art, the present invention provides a photoresist stripping solution capable of protecting GaAs and PI substrates and its application.

[0016] The photoresist stripping solution provided by this invention comprises cyclic organic amines, alcohol ether organic solvents, diols, and azole corrosion inhibitors; the chemical formula of the cyclic organic amine is shown in formula (I), in which R1 and R2 are each independently -H, -CH3, -NH2, -C6H5, -CH3C6H5, -CH3CH2OH, or -CH3CH2NH2, and R3 is -H or -CH3; the diol is an aliphatic diol containing 2 to 6 carbon atoms; the photoresist stripping solution does not contain any of the following: water, aprotic polar solvents, oxidants, halogen compounds, hydroxylamines, quaternary ammonium bases, and inorganic bases. The photoresist stripping solution provided by this invention has excellent photoresist dissolving ability, is water-free and non-protic polar solvent-free, uses cyclic amines and selects a corrosion inhibitor composed of diols and azoles, and achieves the effect of protecting PI and not corroding GaAs and metal substrates such as Cu, Al, and Ti by adjusting the content of the two corrosion inhibitors.

[0017] More specifically: (1) The photoresist stripping solution provided by the present invention is an organic system and does not contain water, N-methylpyrrolidone, dimethyl sulfoxide, N,N-dimethylacetamide, N,N-dimethylformamide, cyclobutane, acetone, hexamethylphosphonic triamine, acetonitrile, DMI and other non-proton polar solvents, thereby avoiding damage to the substrate material by non-proton polar solvents. (2) This invention introduces cyclic amines. On the one hand, compared with other organic amines, cyclic amines can provide better protection for the substrate. On the other hand, cyclic amines can break down long-chain photoresists, and the broken long-chain photoresists can be further dissolved by diols and alcohol ethers. The synergistic effect of cyclic amines, alcohol ethers and diols ensures the complete removal of photoresists. (3) While using cyclic amines, this invention selects a corrosion inhibitor composed of diols and azoles. By adjusting their content, the content of diols is greatly increased and the amount of azoles is reduced, so as to achieve the effect of protecting PI while preventing corrosion of GaAs and metal substrates. On the one hand, the 30-40 wt% content of diols can act as both a corrosion inhibitor and a solvent, enhancing the protection of the substrate and the photoresist dissolution ability, and providing a suitable viscosity for the photoresist stripping solution to facilitate subsequent cleaning. On the other hand, the reduced amount of azoles in the compounded corrosion inhibitor can avoid cleaning residues caused by excessive azoles adsorbing on the wafer surface. The synergistic effect of cyclic amines, diols and azoles improves the resist removal effect while avoiding corrosion of PI, GaAs and metal substrates such as Cu, Al, and Ti. (4) In the stripping solution provided by the present invention, cyclic amines, alcohol ethers, diols and azoles work together to effectively remove photoresist from semiconductor wafers without corroding PI, GaAs and metal substrates such as Cu, Al, Ti, etc., maintaining the wafer's expected yield and enabling subsequent processes to proceed normally. Simple Explanation of the Diagram

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art to which the present invention pertains, other drawings can be obtained based on the provided drawings without any creative effort.

[0019] Figure 1 shows the performance effect of the photoresist stripping solution in Example 1; Figure 2 shows the performance effect of the photoresist stripping solution in Example 2; Figure 3 shows the performance effect of the photoresist stripping solution in Example 3; Figure 4 shows the performance effect of the photoresist stripping solution in Example 4; Figure 5 shows the performance effect of the photoresist stripping solution in Example 5; Figure 6 shows the performance effect of the photoresist stripping solution in Example 6; Figure 7 shows the performance effect of the photoresist stripping solution in Example 7; Figure 8 shows the performance effect of the photoresist stripping solution in Example 8; Figure 9 shows the performance effect of the photoresist stripping solution in Example 9; Figure 10 shows the performance effect of the photoresist stripping solution in Example 10; Figure 11 shows the performance effect of the photoresist stripping solution in Example 11; Figure 12 shows the performance effect of the photoresist stripping solution in Example 12; Figure 13 shows the performance effect of the photoresist stripping solution in Comparative Example 1; Figure 14 shows the performance effect of the photoresist stripping solution in Comparative Example 2; Figure 15 shows the performance effect of the photoresist stripping solution in Comparative Example 3; Figure 16 shows the performance effect of the photoresist stripping solution in Comparative Example 4; Figure 17 shows the performance effect of the photoresist stripping solution in Comparative Example 5; Figure 18 shows the performance effect of the photoresist stripping solution in Comparative Example 6; Figure 19 shows the performance effect of the photoresist stripping solution in Comparative Example 7; Figure 20 shows the performance effect of the photoresist stripping solution in Comparative Example 8; Figure 21 shows the performance effect of the photoresist stripping solution in Comparative Example 9; Figure 22 shows the performance effect of the photoresist stripping solution in Comparative Example 10; Figure 23 shows the effect of the test piece used in the beaker immersion experiment. Implementation

[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] This invention provides a photoresist stripping solution that can protect GaAs and PI substrates, the components of which include cyclic organic amines, alcohol ether organic solvents, diols and azole corrosion inhibitors.

[0022] In the photoresist stripping solution provided by this invention, the chemical formula of the cyclic organic amine is shown in formula (I): Formula (I); In formula (I), R1 and R2 are each independently -H, -CH3, -NH2, -C6H5, -CH3C6H5, -CH3CH2OH or -CH3CH2NH2, and R3 is -H or -CH3.

[0023] In the photoresist stripping solution provided by the present invention, the cyclic organic amine is preferably one or more of 1-(2-hydroxyethyl)piperidine, 1-(2-aminoethyl)piperidine, 1-(2-hydroxyethyl)methylpiperidine, 2-methylpiperidine, 1-methylpiperidine, 4-amino-1-methylpiperidine, 1-benzylmethylpiperidine, and 1-phenylpiperidine; more preferably one or more of 1-(2-hydroxyethyl)piperidine, 1-(2-aminoethyl)piperidine, and 1-(2-hydroxyethyl)methylpiperidine.

[0024] In the photoresist stripping solution provided by the present invention, the content of the cyclic organic amine in the photoresist stripping solution is preferably 5-30 wt%, more preferably 10-30 wt%, and specifically can be 5 wt%, 7 wt%, 8 wt%, 10 wt%, 11 wt%, 11.5 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%, 21 wt%, 22 wt%, 23 wt%, 24 wt%, 25 wt%, 26 wt%, 27 wt%, 28 wt%, 29 wt%, or 30 wt%.

[0025] In the photoresist stripping solution provided by the present invention, the alcohol ether organic solvent is preferably one or more of diethylene glycol methyl ether, dipropylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol propyl ether, diethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol butyl ether, tripropylene glycol butyl ether, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, ethylene glycol phenyl ether, propylene glycol phenyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol propyl ether, diethylene glycol butyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol butyl ether, polyoxyethylene cumylphenol ether, and alkylphenol polyoxyethylene ether; more preferably one or more of dipropylene glycol methyl ether, diethylene glycol methyl ether, and diethylene glycol butyl ether.

[0026] In the photoresist stripping solution provided by the present invention, the content of the alcohol ether organic solvent in the photoresist stripping solution is preferably 25-60 wt%, more preferably 30-56 wt%, and specifically can be 25 wt%, 27 wt%, 29 wt%, 30 wt%, 31 wt%, 32 wt%, 33 wt%, 34 wt%, 35 wt%, 36 wt%, 37 wt%, 37.9 wt%, 38 wt%, 39 wt%, 40 wt%, 41 wt%, 42 wt%, 42.9 wt%, 43 wt%, 44 wt%, 45 wt%, 46 wt%, 47 wt%, 47.5 wt%, 48 wt%, 49 wt%, 50 wt%, 50.78 wt%, 51 wt%, 52 wt%, 53 wt%, 54 wt%, 55 wt%, 55.3 wt%, or 56 wt%.

[0027] In the photoresist stripping solution provided by the present invention, the diol is an aliphatic diol containing 2 to 6 carbon atoms, preferably one or more of diethylene glycol, dipropylene glycol, 1,2-propanediol, 1,3-propanediol, ethylene glycol, 2,3-butanediol, neopentyl glycol, isohexanediol, 1,6-hexanediol, 1,2-hexanediol, 1,2-hexanediol, and 2-butyn-1,4-diol; more preferably diethylene glycol and / or ethylene glycol.

[0028] In the photoresist stripping solution provided by the present invention, the content of the diol in the photoresist stripping solution is preferably 30-40 wt%, more preferably 31-40 wt%, and specifically can be 30 wt%, 31 wt%, 31.5 wt%, 32 wt%, 32.5 wt%, 33 wt%, 33.5 wt%, 34 wt%, 34.5 wt%, 35 wt%, 35.5 wt%, 36 wt%, 36.5 wt%, 37 wt%, 37.5 wt%, 38 wt%, 38.5 wt%, 39 wt%, 39.5 wt%, or 40 wt%.

[0029] In the photoresist stripping solution provided by the present invention, the azole corrosion inhibitor is preferably one or more of benzotriazole (BTA), benzimidazole, benzothiazole, benzotriazole, 1,2,4-triazole, methylbenzotriazole (TTA), 5-methyltetrazazole, 5-mercapto-1-phenyltetrazazole, 4-amino-1,2,4-triazole, 5-amino-1H-tetrazazole, alkylimidazole, 2-mercaptobenzimidazole, 3-amino-1,2,4-triazole, 2-mercapto-5-methylbenzimidazole, 2-aminobenzimidazole, 2-aminobenzothiazole, 2-mercaptobenzimidazole, 2-mercaptobenzimidazole, 5-methylbenzotriazole, 1-hydroxybenzotriazole, and 1-[bis(hydroxyethyl)aminoethyl]methylbenzotriazole.

[0030] In this invention, the azole corrosion inhibitor preferably has an electronic precursor group, which is preferably one or more of methyl, amino, hydroxy, mercapto, phenyl, and alkyl groups.

[0031] In this invention, the azole corrosion inhibitor may specifically be one or more of the following: methylbenzotriazole (TTA), 5-methyltetrazazole, 5-mercapto-1-phenyltetrazazole, 4-amino-1,2,4-triazole, 5-amino-1H-tetrazazole, alkylimidazolium, 2-mercaptobenzimidazole, 3-amino-1,2,4-triazole, 2-mercapto-5-methylbenzimidazole, 2-aminobenzimidazole, 2-aminobenzothiazole, 2-mercaptobenzimidazole, 2-mercaptobenzimidazole, 5-methylbenzotriazole, 1-hydroxybenzotriazole, and 1-[bis(hydroxyethyl)aminoethyl]methylbenzotriazole.

[0032] In the photoresist stripping solution provided by the present invention, the content of the azole corrosion inhibitor in the photoresist stripping solution is preferably less than 0.5 wt%, more preferably 0.01~0.3 wt%, and specifically can be 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.15 wt%, 0.2 wt%, 0.22 wt%, 0.25 wt%, or 0.3 wt%.

[0033] In the photoresist stripping solution provided by this invention, the components of the photoresist stripping solution do not contain any of the following: water, aprotic polar solvent, oxidant, halogen compound, hydroxylamine, quaternary ammonium base, or inorganic base. The aprotic polar solvent includes, but is not limited to, one or more of N-methylpyrrolidone, dimethyl sulfoxide, N,N-dimethylacetamide, N,N-dimethylmethacrylamide, cyclobutane, acetone, hexamethylphosphonic triamine, acetonitrile, and 1,3-dimethyl-2-imidazolinone (DMI); the oxidant includes, but is not limited to, peroxides, such as hydrogen peroxide; the halogen compound includes, but is not limited to, fluorides, such as hydrogen fluoride; the quaternary ammonium base includes, but is not limited to, one or more of tetramethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, benzyltrimethylammonium hydroxide, choline, (2-hydroxyethyl)trimethylammonium hydroxide, and tris(2-hydroxyethyl)methylammonium hydroxide.

[0034] In the photoresist stripping solution provided by the present invention, the composition of the photoresist stripping solution preferably further includes a surfactant and / or a pH adjuster. The surfactant is preferably one or more of a nonionic surfactant, anionic surfactant, and cationic surfactant; the nonionic surfactant is preferably polyoxyethylene; the anionic surfactant is preferably alkylbenzene sulfonate and / or alkyl sulfonate; and the cationic surfactant is preferably alkyl imidazoline salt and / or fatty amine salt. The pH adjuster is preferably one or more of citric acid, malic acid, maleic acid, N,N-dimethylethanolamine (DMEA), diethylamine, acidic amino acids, and basic amino acids.

[0035] In a specific embodiment provided by the present invention, the photoresist stripping solution comprises: 53.3 wt% diethylene glycol butyl ether, 31.5 wt% ethylene glycol, 15 wt% 1-(2-aminoethyl)piperazine, and 0.2 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 53.3 wt% diethylene glycol methyl ether, 31.5 wt% ethylene glycol, 15 wt% 1-(2-hydroxyethyl)piperazine, and 0.2 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 50.78 wt% dipropylene glycol methyl ether, 32 wt% diethylene glycol, 17 wt% 1-(2-aminoethyl)piperazine, and 0.22 wt% 5-mercapto-1-phenyltetrazazole; Alternatively, the photoresist stripping solution comprises: 50.78 wt% dipropylene glycol methyl ether, 32 wt% diethylene glycol, 17 wt% 1-(2-hydroxyethyl)methylpiperazine, and 0.22 wt% 5-amino-1H-tetrazole; Alternatively, the photoresist stripping solution comprises: 57.7 wt% diethylene glycol butyl ether, 34 wt% ethylene glycol, 8 wt% 1-(2-hydroxyethyl)methylpiperazine, and 0.3 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 47.7 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 12 wt% 1-(2-hydroxyethyl)piperazine, and 0.3 wt% 1-phenyl-5-mercaptotetrazole; Alternatively, the photoresist stripping solution comprises: 42.9 wt% diethylene glycol butyl ether, 40 wt% ethylene glycol, 17 wt% 1-(2-hydroxyethyl)methylpiperazine, and 0.1 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 37.7 wt% dipropylene glycol methyl ether, 32 wt% ethylene glycol, 30 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 48.2 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 11.5 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 38.2 wt% diethylene glycol butyl ether, 31.5 wt% ethylene glycol, 30 wt% 1-(2-hydroxyethyl)piperazine, and 0.3 wt% methylbenzotriazole; Alternatively, the photoresist stripping solution comprises: 48.2 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 11.5 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% benzotriazole; Alternatively, the photoresist stripping solution may contain: 48.2 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 11.5 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% benzimidazole.

[0036] The present invention also provides a method for removing photoresist, comprising the following steps: The wafer to which the photoresist is to be removed is brought into contact with the photoresist stripping solution described in the above technical solution to remove the photoresist; After the photoresist removal is completed, the photoresist stripping solution is removed from the wafer.

[0037] In the method provided by the present invention, the substrate of the wafer preferably comprises one or more of Al, Ti, Cu, GaAs and PI.

[0038] In the method provided by the present invention, the temperature for removing the photoresist is preferably 70~90℃, specifically 70℃, 75℃, 80℃, 85℃ or 90℃.

[0039] In the method provided by the present invention, the preferred method for removing the photoresist stripping solution includes: first washing with isopropanol (IPA), and then rinsing the wafer with water to remove the stripping solution.

[0040] The photoresist stripping solution provided by the present invention has excellent photoresist dissolving ability, is water-free and non-protic polar solvent-free, uses cyclic amines and selects a corrosion inhibitor composed of diols and azoles, and achieves protection of PI and no corrosion to metal substrates such as GaAs, Cu, Al, and Ti by adjusting the content of the two corrosion inhibitors.

[0041] More specifically, the technical method of the present invention has the following key points and advantages: (1) The photoresist stripping solution provided by the present invention is an organic system and does not contain water, N-methylpyrrolidone, dimethyl sulfoxide, N,N-dimethylacetamide, N,N-dimethylformamide, cyclobutane, acetone, hexamethylphosphonic triamine, acetonitrile, DMI and other non-proton polar solvents, thereby avoiding damage to the substrate material by non-proton polar solvents. (2) This invention introduces cyclic amines. On the one hand, compared with other organic amines, cyclic amines can provide better protection for the substrate. On the other hand, cyclic amines can break down long-chain photoresists, and the broken long-chain photoresists can be further dissolved by diols and alcohol ethers. The synergistic effect of cyclic amines, alcohol ethers and diols ensures the complete removal of photoresists. (3) While using cyclic amines, this invention selects a corrosion inhibitor composed of diols and azoles. By adjusting their content, the content of diols is greatly increased and the amount of azoles is reduced, so as to achieve the effect of protecting PI while preventing corrosion of GaAs and metal substrates. On the one hand, the 30-40 wt% content of diols can act as both a corrosion inhibitor and a solvent, enhancing the protection of the substrate and the photoresist dissolution ability, and providing a suitable viscosity for the photoresist stripping solution to facilitate subsequent cleaning. On the other hand, the reduced amount of azoles in the compounded corrosion inhibitor can avoid cleaning residues caused by excessive azoles adsorbing on the wafer surface. The synergistic effect of cyclic amines, diols and azoles improves the resist removal effect while avoiding corrosion of PI, GaAs and metal substrates such as Cu, Al, and Ti. (4) In the stripping solution provided by the present invention, cyclic amines, alcohol ethers, diols and azoles work together to effectively remove photoresist from semiconductor wafers without corroding PI, GaAs and metal substrates such as Cu, Al, Ti, etc., maintaining the wafer's expected yield and enabling subsequent processes to proceed normally.

[0042] For clarity, the following detailed description is provided through examples and comparative examples. [Example] [1~12]

[0043] According to the mass ratio in Table 1, cyclic organic amines, alcohol ether organic solvents, diols and azole corrosion inhibitors were added sequentially and stirred to dissolve. The temperature during the dissolution process was controlled to be ≤30℃. After dissolution, the solution was filtered through a 0.2μm filter to obtain the photoresist stripping solutions of Examples 1 to 12.

[0044] [Table 1] Composition of photoresist stripping solution in Examples 1-12 Example alcohol ether organic solvents (wt%) Diol (wt%) Cyclic organic amines (wt%) azole corrosion inhibitors (wt%) 1 Diethylene glycol butyl ether: 53.3 Ethylene glycol: 31.5 1-(2-Aminoethyl)piperazine: 15 TTA: 0.2 2 Diethylene glycol methyl ether: 53.3 Ethylene glycol: 31.5 1-(2-hydroxyethyl)piperazine: 15 TTA: 0.2 3 Dipropylene glycol methyl ether: 50.78 Diethylene glycol: 32 1-(2-Aminoethyl)piperazine: 17 5-Mercapto-1-phenyltetrazazole: 0.22 4 Dipropylene glycol methyl ether: 50.78 Diethylene glycol: 32 1-(2-Hydroxyethyl)methylpiperazine:17 5-Amino-1H-tetrazole: 0.22 5 Diethylene glycol butyl ether: 57.7 Ethylene glycol: 34 1-(2-hydroxyethyl)methylpiperazine:8 TTA: 0.3 6 Dipropylene glycol methyl ether: 47.7 Ethylene glycol: 40 1-(2-hydroxyethyl)piperazine: 12 1-Phenylacetetrazol: 0.3 7 Diethylene glycol butyl ether: 42.9 Ethylene glycol: 40 1-(2-Hydroxyethyl)methylpiperazine:17 TTA:0.1 8 Dipropylene glycol methyl ether: 37.7 Ethylene glycol: 32 1-(2-Aminoethyl)piperazine: 30 TTA: 0.3 9 Dipropylene glycol methyl ether: 48.2 Ethylene glycol: 40 1-(2-Aminoethyl)piperazine: 11.5 TTA: 0.3 10 Diethylene glycol butyl ether: 38.2 Ethylene glycol: 31.5 1-(2-Hydroethyl)piperazine: 30 TTA: 0.3 11 Dipropylene glycol methyl ether: 48.2 Ethylene glycol: 40 1-(2-Aminoethyl)piperazine: 11.5 BTA: 0.3 12 Dipropylene glycol methyl ether: 48.2 Ethylene glycol: 40 1-(2-Aminoethyl)piperazine: 11.5 Benzimidazole: 0.3 [Comparative example] [1~10]

[0045] According to the mass ratio in Table 2, organic amine, alcohol ether organic solvent, corrosion inhibitor A and corrosion inhibitor B were added sequentially and stirred to dissolve. The temperature during the dissolution process was controlled to be ≤30℃. After dissolution, the solution was filtered through a 0.2μm filter to obtain the photoresist stripping solutions of Comparative Examples 1 to 10.

[0046] [Table 2] Composition of photoresist stripping solution for Comparative Examples 1-10 Comparative example Alcohol ether organic solvents (wt%) Corrosion inhibitor A (wt%) organic amines (wt%) Corrosion inhibitor B (wt%) 1 Diethylene glycol butyl ether: 53.3 Benzyl alcohol: 31.5 1-(2-Aminoethyl)piperazine: 15 TTA: 0.2 2 Diethylene glycol butyl ether: 53.3 Glycerol: 31.5 1-(2-Hydroethyl)piperazine: 15 TTA: 0.2 3 Dipropylene glycol methyl ether: 50.78 Diethylene glycol: 32 N-(3-aminopropyl)morpholine: 17 5-Phenyl-1-phenyltetrazazole: 0.22 4 Dipropylene glycol methyl ether: 50.78 Diethylene glycol: 32 4-(2-aminoethyl)morpholine: 17 5-Amino-1H-tetrazole: 0.22 5 Diethylene glycol butyl ether: 57.7 Ethylene glycol: 34 N-(3-aminopropyl)morpholine: 8 TTA: 0.3 6 Dipropylene glycol methyl ether: 47.7 Ethylene glycol: 40 Ethanolamine: 12 1-Phenylacetetrazol: 0.3 7 Diethylene glycol butyl ether: 37.9 Ethylene glycol: 45 1-(2-Aminoethyl)piperazine: 17 TTA:0.1 8 Dipropylene glycol methyl ether: 44.7 Ethylene glycol: 25 1-(2-Aminoethyl)piperazine: 30 TTA: 0.3 9 Diethylene glycol butyl ether: 38.2 Ethylene glycol: 31.5 1-(2-Hydroethyl)piperazine: 30 Gallic acid: 0.3 10 Diethylene glycol butyl ether: 38.2 Ethylene glycol: 31.5 1-(2-Hydroethyl)piperazine: 30 hydrazine hydrate: 0.3 [Effect Evaluation] [ ] (1) Performance test of the stripping liquid:

[0047] A beaker immersion experiment was conducted. Equal amounts of photoresist stripping solution were placed in beakers and then placed in an oil bath. After the temperature reached 80°C, the test pieces (GaAs substrate and PI substrate) were placed in the beakers and immersed for 20 minutes. After removal, the pieces were first cleaned with IPA, then with deionized water, and finally dried with high-purity nitrogen. After drying, the surface of the GaAs substrate was observed using an optical microscope (OM) to check for residual photoresist. A scanning electron microscope (SEM) was used to determine whether the GaAs layer in the trench of the GaAs substrate was corroded. The thickness of the PI film was measured using a focused ion beam (FIB) to determine whether the PI substrate was corroded. The OM (Optical Microscope) image of the cleaning effect, the SEM (Scanning Electron Microscope) image of the GaAs substrate corrosion, and the FIB (Focused Ion Beam) film thickness image of the PI layer are shown in Figures 1-22. The OM image of the test piece without beaker immersion experiment, the SEM image of the GaAs substrate corrosion, and the FIB film thickness image of the PI layer are shown in Figure 23. In each figure, A is the OM image, B is the SEM image of the GaAs substrate corrosion, and C is the FIB (Focused Ion Beam) film thickness image of the PI layer. The PI film thickness data are shown in Tables 3-4. Since the film thickness at each location of the test piece is not completely consistent, the PI layer thickness after cleaning is within the normal range of 2.5-2.7 μm, and the thickness is below 2 μm, which indicates corrosion. (2) Etching rate test:

[0048] A beaker immersion experiment was conducted. First, the thickness of the Al, Cu, Ti, and GaAs test pieces provided by the customer was measured. Then, equal amounts of photoresist stripping solution were placed in beakers and immersed in an oil bath. After the temperature reached 85℃, the Al, Ti, Cu, and GaAs test pieces were immersed in the beakers for 6 hours. After removal, they were first cleaned with IPA, then with deionized water, and finally dried with high-purity nitrogen. The thickness was measured again. The etching rate was calculated as the ratio of the thickness difference before and after immersion to the time (the thickness was measured using a four-point probe machine; the thickness unit is Å, and the etching rate unit is Å / min). The test results are shown in Tables 3-4.

[0049] [Table 3] Performance and etching rate test results of photoresist stripping solutions in Examples 1-12 Example Cleaning effect Al (Å / min) Ti (Å / min) GaAs (Å / min) Cu (Å / min) PI film thickness 1 Clean glue removal 0.3 0.24 <1 0.1 2.652μm 2 Clean glue removal 0.25 0.3 <1 0.08 2.638μm 3 Clean glue removal 0.31 0.26 <1 0.05 2.680μm 4 Clean glue removal 0.31 0.17 <1 0.12 2.735μm 5 Clean glue removal 0.2 0.2 <1 0.06 2.708μm 6 Clean glue removal 0.2 0.25 <1 0.05 2.624 / 2.456μm 7 Clean glue removal 0.18 0.31 <1 0.06 2.624μm 8 Clean glue removal 0.15 0.19 <1 0.06 2.582μm 9 Clean glue removal 0.21 0.19 <1 0.10 2.582μm 10 Clean glue removal 0.18 0.17 <1 0.11 2.694μm 11 Clean glue removal 0.16 0.18 <1 0.08 2.177μm 12 Clean glue removal 0.23 0.14 <1 0.06 2.610μm

[0050] [Table 4] Performance and etching rate test results of photoresist stripping solutions in Comparative Examples 1-10 Comparative example Cleaning effect Al (Å / min) Ti (Å / min) GaAs (Å / min) Cu (Å / min) PI film thickness 1 Clean glue removal 6.3 3.2 >4 5.6 1.703μm 2 Incomplete glue removal 0.28 0.35 <1 0.23 2.135μm 3 Clean glue removal 6.8 3.4 >4 6.2 1.535μm 4 Clean glue removal 6.2 4 >4 7.3 1.800μm 5 Incomplete glue removal 5.8 4.3 >4 6.5 1.493μm 6 Clean glue removal 6.7 5.6 >4 5.8 1.479μm 7 Incomplete glue removal 0.15 0.1 <1 0.11 2.652μm 8 Incomplete glue removal 6.5 5 >4 6.9 1.856μm 9 Clean glue removal 6.5 4.7 >4 5.5 1.675μm 10 Clean glue removal 7.2 5.4 >4 6.3 1.591μm (3) Experimental test conclusions:

[0051] In Example 1 and Comparative Example 1, the same amount of monohydric alcohol and dihydric alcohol were added respectively. As shown in Table 3, Figure 1 and Figure 13, compared with Example 1, Comparative Example 1 showed a much higher corrosion rate on metals Cu, Al, Ti and GaAs, and the PI film thickness was less than 2 μm. This indicates that the scheme of Comparative Example 1 would corrode GaAs substrate and various metal substrates and could not be compatible with the PI protective layer, indicating that the protective effect of monohydric alcohol is not as good as that of dihydric alcohol.

[0052] In Example 2 and Comparative Example 2, the same amount of diol and triol were added respectively. As can be seen from Table 3, Figure 2 and Figure 14, compared with Example 2, the adhesive removal of Comparative Example 2 was not as complete. The reason for this is that the viscosity of the triol is too high, which will cause the adhesive to stick back.

[0053] In Examples 3 and 4 and Comparative Examples 3 and 4, the same amounts of piperazine and morpholine were added, respectively. As shown in Table 3, Figure 3, Figure 4, Figure 15, and Figure 16, compared with Examples 3 and 4, Comparative Examples 3 and 4 showed much higher corrosion rates on metals Cu, Al, Ti, and GaAs, and the PI film thickness was less than 2 μm. This indicates that the schemes of Comparative Examples 3 and 4 would corrode GaAs substrates and various metal substrates. The incompatibility of the PI protective layer indicates that the protective properties of different types of morpholine are weaker than those of piperazine.

[0054] In Example 5 and Comparative Example 5, the same low amounts of morpholine and piperazine were added. As shown in Table 3, Figure 5, and Figure 17, compared with Example 5, Comparative Example 5 not only had incomplete degumming but also exhibited a high corrosion rate on metals Cu, Al, Ti, and GaAs. At the same time, the PI film thickness was less than 2 μm, indicating that the photoresist dissolution ability of the scheme in Comparative Example 5 was not ideal, and it would corrode the GaAs substrate and various metal substrates, and was incompatible with the PI protective layer. This shows that the protective and degumming properties of low-content piperazine are superior to those of morpholine.

[0055] In Example 6 and Comparative Example 6, the same amount of cyclic amines and linear amines were added. As shown in Table 3, Figure 6, and Figure 18, compared with Example 6, Comparative Example 6 showed a much higher corrosion rate on metals Cu, Al, Ti, and GaAs. At the same time, the PI film thickness was less than 2 μm, indicating that the scheme of Comparative Example 6 would corrode GaAs substrates and various metal substrates and could not be compatible with the PI protective layer. This shows that the protective effect of linear amines on the substrate is not as good as that of cyclic amines.

[0056] In Example 7 and Comparative Example 7, different amounts of alcohol were added. As can be seen from Table 3, Figure 7 and Figure 19, compared with Example 7, Comparative Example 7 showed the phenomenon of incomplete degumming. The reason for this is that when the amount of alcohol added exceeds a certain level, the phenomenon of re-adhesion will occur.

[0057] In Example 8 and Comparative Example 8, different amounts of alcohol were added. As shown in Table 3, Figure 8, and Figure 20, compared with Example 8, Comparative Example 8 showed incomplete removal of the adhesive, a high corrosion rate on metals Cu, Al, Ti, and GaAs, and a PI film thickness of <2μm. This indicates that the photoresist dissolution ability of the scheme in Comparative Example 8 is not ideal, and it will corrode the GaAs substrate and various metal substrates, and is incompatible with the PI protective layer. This shows that when the amount of diol added is lower than a certain level, its protective effect on the substrate is greatly weakened and its dissolution ability of the photoresist decreases.

[0058] In Examples 9 and 11 and 12, azoles with and without electronic precursor groups were added, respectively. As shown in Table 3, Figure 9, Figure 11 and Figure 12, the thickness of the substrate PI in Examples 11, 12 and 9 is all >2 μm, with little difference. However, the GaAs surface in Examples 11 and 12 is slightly rough, while the GaAs surface in Example 9 is very smooth, indicating that adding azoles with electronic precursor groups provides better protection for the substrate.

[0059] In Example 10 and Comparative Examples 9 and 10, azole-based corrosion inhibitors and non-azole-based corrosion inhibitors were added, respectively. As shown in Table 3, Figure 10, Figure 21, and Figure 22, compared with Example 10, Comparative Examples 9 and 10 showed severe substrate corrosion and high corrosion rates on metals Cu, Al, Ti, and GaAs. This indicates that the combination of azole and alcohol-based corrosion inhibitors is the most effective in this system.

[0060] The above description is only a preferred embodiment of the present invention. It should be noted that those skilled in the art can make several improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A photoresist stripping solution capable of protecting GaAs and PI substrates, comprising: The photoresist stripping solution contains cyclic organic amines, alcohol ether organic solvents, diols, and azole corrosion inhibitors. The chemical formula of the cyclic organic amine is shown in Formula (I): Formula (I); In Formula (I), R1 and R2 are each independently -H, -CH3, -NH2, -C6H5, -CH3C6H5, -CH3CH2OH, or -CH3CH2NH2, and R3 is -H or -CH3; The diol is an aliphatic diol containing 2 to 6 carbon atoms; The photoresist stripping solution is free of water, aprotic polar solvents, oxidants, halogen compounds, hydroxylamines, quaternary ammonium bases, and inorganic bases; The content of the cyclic organic amine in the photoresist stripping solution is 5 to 30 wt%; The content of the alcohol ether organic solvent in the photoresist stripping solution is 25 to 60 wt%; The content of the diol in the photoresist stripping solution is 30 to 40 wt%; and the content of the azole corrosion inhibitor in the photoresist stripping solution is less than 0.5 wt%.

2. The photoresist stripping solution as described in claim 1, wherein, The cyclic organic amine is one or more of 1-(2-hydroxyethyl)piperidine, 1-(2-aminoethyl)piperidine, 1-(2-hydroxyethyl)methylpiperidine, 2-methylpiperidine, 1-methylpiperidine, 4-amino-1-methylpiperidine, 1-benzylmethylpiperidine, and 1-phenylpiperidine; And / or, the alcohol ether organic solvent is one or more of diethylene glycol methyl ether, dipropylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol propyl ether, diethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol butyl ether, tripropylene glycol butyl ether, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, ethylene glycol phenyl ether, propylene glycol phenyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol propyl ether, diethylene glycol butyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol butyl ether, polyoxyethylene cumylphenol ether, and alkylphenol polyoxyethylene ether; And / or, the diol is one or more selected from diethylene glycol, dipropylene glycol, 1,2-propanediol, 1,3-propanediol, ethylene glycol, 2,3-butanediol, neopentyl glycol, isohexanediol, 1,6-hexanediol, 1,2-hexanediol, 1,2-hexanediol, and 2-butyn-1,4-diol; And / or, the azole corrosion inhibitor is one or more of benzotriazole, benzimidazole, benzothiazole, benzotriazole, 1,2,4-triazole, methylbenzotriazole, 5-methyltetrazazole, 5-mercapto-1-phenyltetrazazole, 4-amino-1,2,4-triazole, 5-amino-1H-tetrazazole, alkylimidazole, 2-mercaptobenzimidazole, 3-amino-1,2,4-triazole, 2-mercapto-5-methylbenzimidazole, 2-aminobenzimidazole, 2-aminobenzothiazole, 2-mercaptobenzimidazole, 5-methylbenzotriazole, 1-hydroxybenzotriazole, and 1-[bis(hydroxyethyl)aminoethyl]methylbenzotriazole; And / or, the aprotic polar solvent is one or more of N-methylpyrrolidone, dimethyl sulfoxide, N,N-dimethylacetamide, N,N-dimethylmethamide, cyclobutane, acetone, hexamethylphosphonic triamine, acetonitrile, and 1,3-dimethyl-2-imidazolinone; the oxidant is a peroxide; the halogen compound is a fluoride; and the quaternary ammonium base is one or more of tetramethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, benzyltrimethylammonium hydroxide, choline, (2-hydroxyethyl)trimethylammonium hydroxide, and tris(2-hydroxyethyl)methylammonium hydroxide.

3. The photoresist stripping solution as described in claim 1, wherein, The azole corrosion inhibitor has an electronic precursor group, which is one or more of methyl, amino, hydroxy, mercapto, phenyl, and alkyl groups.

4. The photoresist stripping solution as described in claim 1, wherein, The cyclic organic amine is present in a concentration of 10-30 wt% in the photoresist stripping solution; and / or, the alcohol ether organic solvent is present in a concentration of 30-56 wt% in the photoresist stripping solution; and / or, the diol is present in a concentration of 31-40 wt% in the photoresist stripping solution; and / or, the azole corrosion inhibitor is present in a concentration of 0.01-0.3 wt% in the photoresist stripping solution.

5. The photoresist stripping solution as described in claim 1, wherein, The photoresist stripping solution comprises: 53.3 wt% diethylene glycol butyl ether, 31.5 wt% ethylene glycol, 15 wt% 1-(2-aminoethyl)piperazine, and 0.2 wt% methylbenzotriazole; or, the photoresist stripping solution comprises: 53.3 wt% diethylene glycol methyl ether, 31.5 wt% ethylene glycol, 15 wt% 1-(2-hydroxyethyl)piperazine, and 0.2 wt% methylbenzotriazole; or, the photoresist stripping solution comprises: 50.78 wt% dipropylene glycol methyl ether, 32 wt% diethylene glycol, 17 wt% 1-(2-aminoethyl)piperazine, and 0.22 wt% 5-mercapto-1-phenyltetrazolium. Alternatively, the photoresist stripping solution comprises: 50.78 wt% dipropylene glycol methyl ether, 32 wt% diethylene glycol, 17 wt% 1-(2-hydroxyethyl)methylpiperazine, and 0.22 wt% 5-amino-1H-tetrazole; or, the photoresist stripping solution comprises: 57.7 wt% diethylene glycol butyl ether, 34 wt% ethylene glycol, 8 wt% 1-(2-hydroxyethyl)methylpiperazine, and 0.3 wt% methylbenzotriazole; or, the photoresist stripping solution comprises: 47.7 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 12 wt% 1-(2-hydroxyethyl)piperazine, and 0.3 wt% 5-mercapto-1-phenyltetrazole. Alternatively, the photoresist stripping solution comprises: 42.9 wt% diethylene glycol butyl ether, 40 wt% ethylene glycol, 17 wt% 1-(2-hydroxyethyl)methylpiperazine, and 0.1 wt% methylbenzotriazole; or, the photoresist stripping solution comprises: 37.7 wt% dipropylene glycol methyl ether, 32 wt% ethylene glycol, 30 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% methylbenzotriazole; or, the photoresist stripping solution comprises: 48.2 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 11.5 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% methylbenzotriazole; or, the photoresist stripping solution comprises: 38.2 wt% diethylene glycol butyl ether, 31.5 wt% ethylene glycol, 30 wt% 1-(2-hydroxyethyl)piperazine, and 0.3 wt% methylbenzotriazole. Alternatively, the photoresist stripping solution comprises: 48.2 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 11.5 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% benzotriazole; or, the photoresist stripping solution comprises: 48.2 wt% dipropylene glycol methyl ether, 40 wt% ethylene glycol, 11.5 wt% 1-(2-aminoethyl)piperazine, and 0.3 wt% benzotriazole.

6. The photoresist stripping solution as described in claim 1, wherein, The photoresist stripping solution further includes surfactants and / or pH adjusters.

7. The photoresist stripping solution as described in claim 6, wherein, The surfactant is one or more of nonionic surfactants, anionic surfactants, and cationic surfactants; and / or the pH adjuster is one or more of citric acid, malic acid, maleic acid, N,N-dimethylethanolamine, diethylamine, acidic amino acids, and basic amino acids.

8. A method for removing photoresist, wherein, The process includes the following steps: contacting the wafer from which the photoresist is to be removed with the photoresist stripping solution as described in any one of claims 1 to 7 to remove the photoresist; and removing the photoresist stripping solution from the wafer after the photoresist removal is completed.

9. The method as described in claim 8, wherein, The substrate of the wafer comprises one or more of Al, Ti, Cu, GaAs and PI.

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