Method for manufacturing substrate processing apparatus and articles

Abstract

A substrate apparatus comprising: a chamber; a substrate holding portion that holds a substrate having a membrane in the interior space of the chamber; a heater that heats the membrane to perform heat treatment on the membrane; a gas analyzer having a gas sampling portion communicating with the interior space and detecting a specific gas in the interior space; a gas flow forming portion including a supply portion that supplies an inert gas to the interior space to form a flow of the inert gas that flows along the surface of the substrate to the gas sampling portion; and a controller that determines the end of the heat treatment of the membrane based on the output of the gas analyzer.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Previous Technology]

[0002] Japanese Patent Application Publication No. 7-40354 discloses a thin film manufacturing apparatus comprising a baking oven, a heater for heating a sample in the baking oven, an exhaust gas detection device for detecting exhaust gas from the baking oven, and a heating program controller. In this thin film manufacturing apparatus, during the curing of the sample in the vacuum-vented baking oven, the exhaust gas detection device analyzes the gas emitted from the baking oven, and when a specific substance becomes undetectable, the heating program controller stops supplying power to the heater.

[0003] The concentration of the gas being tested may differ significantly near the surface of the sample and at locations far from it (e.g., the inner surface of the baking oven). To more quickly detect the end of the heating process, the gas near the sample surface should be extracted and analyzed using an exhaust gas detection device. However, in the thin film manufacturing apparatus described in Japanese Patent Application Publication No. 7-40354, the gas in the entire space inside the baking oven is analyzed by the exhaust gas detection device; therefore, a considerable time delay may occur before the state of the sample is reflected in the analysis results. This may be a major cause of delayed cessation of the heating process and reduced throughput. [Summary of the Invention]

[0004] The present invention provides a technique that is advantageous in order to increase the throughput of heat treatment of films on substrates.

[0005] One aspect of the present invention relates to a substrate processing apparatus, the substrate apparatus comprising: a chamber; a substrate holding portion holding a substrate having a membrane in the interior space of the chamber; a heater heating the membrane to perform heat treatment on the membrane; a gas analyzer having a gas sampling portion communicating with the interior space and detecting a specific gas in the interior space; a gas flow forming portion including a supply portion supplying an inert gas to the interior space to form a flow of the inert gas flowing along the surface of the substrate to the gas sampling portion; and a controller determining the end of the heat treatment of the membrane based on the output of the gas analyzer.

Implementation Method

[0007] Hereinafter, embodiments will be described in detail with reference to the drawings. Furthermore, the embodiments described below are not intended to limit the scope of the patent application. Although a plurality of features are described in the embodiments, it is not limited to the fact that all of these features are essential to the invention; moreover, the plurality of features can be combined arbitrarily. Furthermore, in the drawings, the same or identical components are labeled with the same reference numerals, and repeated descriptions are omitted. In the embodiments and drawings described below, directions are represented by the XYZ coordinate system. In the XYZ coordinate system, the XY plane can be the horizontal direction, and the negative direction of the Z-axis can be the vertical direction.

[0008] FIG1 is a schematic cross-sectional view illustrating the configuration of the substrate processing apparatus SPA according to the embodiment. FIG2 is a top view viewed from below along plane A-A in FIG1. ​​The substrate processing apparatus SPA may be configured to process a substrate S having a film F. More specifically, the substrate processing apparatus SPA may be configured to perform heat treatment on the film F of the substrate S.

[0009] Film F, for example, may be a film (hereinafter, solution film) composed of a solution containing a solute and a solvent for forming an organic film. The organic film may be, for example, any one of a hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an organic EL (OLED) element. The manufacture of an organic EL element may include a process of forming each organic film, such as a hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer, on a substrate. The process of forming each organic film on the substrate may include: a coating process of distributing or coating a solution film on the substrate using a printing method or the like; a drying process of drying the solution film to form a dry film; and a heat treatment process of heat-treating the dry film. The heat treatment process may include a firing process. The solvent may have the property of evaporating in a reduced pressure environment below atmospheric pressure. The evaporation of the solvent may be promoted, for example, at a temperature above room temperature (25°C). In the drying process, the film is dried by evaporating the solvent from the film. During the drying process, a small amount of solvent remains in the membrane, which can be removed during the subsequent heat treatment process.

[0010] The substrate processing apparatus SPA may include a chamber 10. The chamber 10 is a component that defines an internal space SP separated from the external space. The chamber 10 can also be understood as a component that surrounds the internal space SP. Hereinafter, the internal space SP defined by the chamber 10 will also be referred to as the internal space SP of the chamber 10. The chamber 10 may include at least one gate valve 12. The substrate S to be heat-treated can be transferred from the external space of the chamber 10 to the internal space SP through the gate valve 12. In addition, the substrate S after heat treatment can be transferred from the internal space SP to the external space.

[0011] The substrate processing apparatus SPA may further include a discharge pump 30 for discharging gas from the internal space SP of the chamber 10. The discharge of gas from the internal space SP via the discharge pump 30 may be adjusted to maintain the internal space SP at a predetermined pressure (e.g., atmospheric pressure), or may be controlled by the controller 90 described later. The discharge pump 30 can draw inert gas from the internal space SP and discharge it through a discharge port 32 for discharging inert gas from the internal space SP.

[0012] The substrate processing apparatus SPA may further include a substrate holding section 20 for holding a substrate S having a film F. The substrate holding section 20 is disposed in the internal space SP. The substrate processing apparatus SPA may further include a heater 70, which heats the film F to heat-treat (e.g., burn-in) the film F on the substrate S.

[0013] The substrate processing apparatus SPA may include a gas analyzer 60 for detecting a specific gas in the internal space SP. The gas analyzer 60 may be a residual gas analyzer (RGA) such as a mass analyzer. The specific gas detected by the gas analyzer 60 is a gas that evaporates from the film F of the substrate S during heat treatment, i.e., the gas that is the object of detection. More specifically, the specific gas may be a solvent (gas) that evaporates from the film F. The gas analyzer 60 has a gas sampling section 62, which has an opening communicating with the internal space SP.

[0014] The substrate processing apparatus SPA may further include a gas flow forming section GFF, which includes a supply section 50 that supplies inert gas to the internal space SP to form an inert gas flow IGF that flows along the surface of the substrate S to the gas sampling section 62 (opening) of the gas analyzer 60. The inert gas is typically a gas that does not react with the membrane F, such as nitrogen. The supply section 50 includes at least one supply nozzle 52 through which inert gas can be supplied to the internal space SP. The inert gas supplied to the internal space SP through the at least one supply nozzle 52 flows along the surface of the substrate S.

[0015] The substrate processing apparatus SPA may include a controller 90. The controller 90 may be configured to determine the end of the heat treatment of the film F based on the output of the gas analyzer 60. The controller 90 may be configured to determine the end of the heat treatment of the film F of the substrate S based on the output of the gas analyzer 60. For example, the controller 90 may be configured to determine that the heat treatment (e.g., firing process) of the film F of the substrate S has ended when the output of the gas analyzer 60 shows that the amount of a specific gas is below a preset amount. The controller 90 may be, for example, a PLD (Programmable Logic Device) such as a Field Programmable Gate Array (FPGA), an Application Specific Integrated Circuit (ASIC), or a programmed general-purpose or special-purpose computer, or a combination of all or some of these.

[0016] By forming an inert gas flow IGF that flows along the surface of the substrate S and reaches the gas sampling section 62 of the gas analyzer 60, a gas that more accurately reflects the state of the film F on the substrate S can be supplied to the gas sampling section 62 of the gas analyzer 60. Therefore, when the heat treatment of the film F ends and the concentration of a specific gas released from the film F becomes sufficiently low, the concentration of the specific gas in the gas supplied to the gas sampling section 62 of the gas analyzer 60 will also become sufficiently low. Therefore, the controller 90 can determine in advance that the heat treatment of the film F has ended based on the output of the gas analyzer 60.

[0017] On the other hand, if inert gas is not supplied to the internal space SP, then of course no inert gas flow IGF is formed; therefore, the determination of the end of the heat treatment of the membrane F based on the output of the gas analyzer 60 will have a considerable delay relative to the actual end of the heat treatment of the membrane F. Furthermore, even when inert gas is supplied to the internal space SP, the same applies if no inert gas flow IGF is formed that flows along the surface of the substrate S and reaches the gas sampling section 62 of the gas analyzer 60.

[0018] In one example, the supply unit 50 includes a supply nozzle 52 that sprays inert gas into the internal space SP, and the airflow forming unit GFF includes an outlet 32 ​​that discharges inert gas from the internal space SP, the outlet 32 ​​being arranged facing the supply nozzle 52. In such a configuration, as schematically shown in FIG2, the gas sampling unit 62 may be configured such that the axial direction of the gas sampling unit 62 is aligned with an imaginary straight line VL connecting the supply nozzle 52 and the outlet 32.

[0019] As schematically shown in FIG. 3, the substrate processing apparatus SPA may further include a rectifier plate 40 arranged facing the substrate S held by the substrate holding section 20. The rectifier plate 40 may also include a heating element HE. The substrate processing apparatus SPA may also include a lifting mechanism 80 for raising and lowering the rectifier plate 40. The lifting mechanism 80 can be used when conveying the substrate S to and from the substrate holding section 20. When conveying (loading) the substrate S to and from the substrate holding section 20, the lifting mechanism 80 may, for example, respond to a command from the controller 90 to position the rectifier plate 40 at a first height. Here, the first height is the height at which the substrate conveying mechanism (not shown) can convey the substrate S above the substrate holding section 20. When the film F of the substrate S is heat-treated, the lifting mechanism 80 may, for example, respond to a command from the controller 90 to position the rectifier plate 40 at a second height lower than the first height.

[0020] As schematically shown in FIG. 4, the outlet 32, which is part of the airflow forming section GFF, may be configured to face the central portion of the substrate S held by the substrate holding section 20. The central portion of the substrate S may be a region whose center coincides with the center of the substrate S, has a similar shape to the substrate S, and has an area of ​​30% of the area of ​​the substrate S. Alternatively, the meaning of the central portion of the substrate S may also be explicitly defined, for example, as a region whose center coincides with the center of the substrate S, has a similar shape to the substrate S, and has an area of ​​20% of the area of ​​the substrate S. Alternatively, the meaning of the central portion of the substrate S may also be explicitly defined, for example, as a region whose center coincides with the center of the substrate S, has a similar shape to the substrate S, and has an area of ​​10% of the area of ​​the substrate S.

[0021] As schematically shown in FIG. 4, the supply unit 50 includes a plurality of supply nozzles 52 through which inert gas is supplied to the internal space SP. The inert gas supplied to the internal space SP through the plurality of supply nozzles 52 flows along the surface of the substrate S. The plurality of supply nozzles 52 may include two supply nozzles 52 arranged facing each other. The plurality of supply nozzles 52 may also include a plurality of pairs of supply nozzles, each pair consisting of two supply nozzles 52 arranged facing each other.

[0022] The axial direction (Z direction) of the outlet 32 ​​is, for example, along the normal direction of the surface of the substrate S held by the substrate holding portion 20. The gas sampling portion 62 may be disposed near the outlet 32. The gas sampling portion 62 is disposed in a manner that faces the central portion of the substrate S, that is, the gas sampling portion 62 is disposed near the outlet 32.

[0023] In a configuration where the outlet 32, which is part of the airflow forming section GFF, faces the center of the substrate S held by the substrate holding section 20, as schematically shown in FIG. 5, the substrate processing apparatus SPA may also include a rectifier plate 40. The rectifier plate 40 may be provided with an opening 42 for the passage of the inert gas flow IGF. The substrate processing apparatus SPA may also include a lifting mechanism 80 for raising and lowering the rectifier plate 40.

[0024] As schematically shown in FIG. 5, a rectifier plate 40 may be added relative to the embodiment schematically shown in FIG. 4. The rectifier plate 40 is configured to face the substrate S held by the substrate holding portion 20. Furthermore, the rectifier plate 40 may also include a heating element HE.

[0025] As schematically shown in FIG. 6, at least a portion of the gas sampling section 62 may also be disposed in the outlet 32. Alternatively, the gas sampling section 62 may be configured such that the central axis of at least a portion of the gas sampling section 62 coincides with the central axis of the outlet 32. In such a configuration, as schematically shown in FIG. 4, the supply section 50 includes a plurality of supply nozzles 52 through which inert gas is supplied to the internal space SP. The inert gas supplied to the internal space SP through the plurality of supply nozzles 52 flows along the surface of the substrate S. The plurality of supply nozzles 52 may include two supply nozzles 52 arranged facing each other. The plurality of supply nozzles 52 may also include a plurality of pairs of supply nozzles, each pair consisting of two supply nozzles 52 arranged facing each other.

[0026] As schematically shown in FIG7, a rectifier plate 40 may be added relative to the embodiment schematically shown in FIG6. The rectifier plate 40 is configured to face the substrate S held by the substrate holding portion 20. Furthermore, the rectifier plate 40 may also include a heating element HE.

[0027] FIG. 8 shows the results of a simulation of the inert gas flow IGF in the substrate processing apparatus SPA shown in FIG. 7. The inert gas blown out from the supply nozzle 52 flows along the surface of the substrate S and then flows into the gas sampling unit 62 through the opening 42 of the rectifier plate 40. The inert gas flow IGF can effectively deliver or guide specific gases released from the film of the substrate S to the gas sampling unit 62.

[0028] FIG. 9 illustrates a substrate processing method as a method of using a substrate processing apparatus SPA. The substrate processing method shown in FIG. 9 can be controlled by a controller 90. In procedure S1, a substrate S having a film F is transported (loaded) into a substrate holding section 20 disposed in the internal space SP of the chamber 10 and placed in the substrate holding section 20. In procedure S2, heating of the film F is started so that the film F is heat-treated or fired. In procedure S3, during heat treatment or firing, while forming a flow IGF of inert gas that flows along the surface of the substrate S and reaches the gas sampling section 62 of the gas analyzer 60, a specific gas (solvent) is detected by the gas analyzer 60. In procedure S4, based on the output of the gas analyzer 60, it is determined that the heat treatment or firing of the film F has ended. In procedure S4, if it is determined that the heat treatment or firing has ended, procedure S5 is executed; otherwise, procedure S3 is executed again. In procedure S5, the substrate S held by the substrate holding part 20 is transported (unloaded) to the external space of the chamber 10.

[0029] The substrate S, which is transported to the external space of the chamber 10, is then further processed; thereby, an article as the target object is obtained from the processed substrate S. Such processing may include further film formation (formation (coating), drying, firing), electrode formation, sealing film formation, etc.

[0030] The invention is not limited to the foregoing embodiments. Various changes and modifications may be made without departing from the spirit and scope of the invention. Therefore, the scope of the patent application is drafted to disclose the scope of the invention. [Simplified Explanation of the Diagram]

[0006] [Fig. 1] A schematic cross-sectional view illustrating the configuration of the substrate processing apparatus according to the first embodiment. [Fig. 2] A top view taken from plane A-A in Fig. 1. [Fig. 3] A schematic cross-sectional view illustrating the configuration of the substrate processing apparatus according to the second embodiment. [Fig. 4] A schematic cross-sectional view illustrating the configuration of the substrate processing apparatus according to the third embodiment. [Fig. 5] A schematic cross-sectional view illustrating the configuration of the substrate processing apparatus according to the fourth embodiment. [Fig. 6] A schematic cross-sectional view illustrating the configuration of the substrate processing apparatus according to the fifth embodiment. [Fig. 7] A schematic cross-sectional view illustrating the configuration of the substrate processing apparatus according to the sixth embodiment. [Fig. 8] A diagram illustrating the results of simulating the flow of inert gas in the substrate processing apparatus of the sixth embodiment. [Fig. 9] A diagram illustrating a substrate processing method as a method of using the substrate processing apparatus.

Claims

1. A substrate processing apparatus comprising: a chamber; a substrate holding portion holding a substrate having a film in an internal space of the chamber; a heater heat-treating the film to heat the film; a gas analyzer having a gas sampling portion communicating with the internal space for detecting a specific gas in the internal space; a supply portion supplying an inert gas to the internal space; and an outlet for discharging the inert gas from the internal space; the gas sampling portion being disposed between the supply portion and the outlet; and the outlet being configured to face the central portion of the substrate held by the substrate holding portion.

2. The substrate processing apparatus as claimed in claim 1, wherein, The aforementioned supply section includes at least one supply nozzle, through which the aforementioned inert gas is supplied to the aforementioned internal space, and the aforementioned inert gas supplied to the aforementioned internal space through the aforementioned at least one supply nozzle flows along the surface of the aforementioned substrate.

3. The substrate processing apparatus as claimed in claim 1, wherein, The axial direction of the aforementioned discharge port is along the normal direction of the surface of the aforementioned substrate held by the aforementioned substrate holding portion.

4. The substrate processing apparatus as claimed in claim 1, wherein, The aforementioned gas sampling unit is located near the aforementioned discharge outlet.

5. The substrate processing apparatus as claimed in claim 1, wherein, The aforementioned gas sampling unit is configured to face the aforementioned substrate held by the aforementioned substrate holding unit.

6. The substrate processing apparatus as claimed in claim 5, wherein, The axial direction of the aforementioned gas sampling section is along the normal direction of the surface of the aforementioned substrate held by the aforementioned substrate holding section.

7. The substrate processing apparatus as claimed in claim 1, wherein, At least a portion of the aforementioned gas sampling unit is disposed in the aforementioned discharge port.

8. The substrate processing apparatus as claimed in claim 2, wherein, The aforementioned at least one supply nozzle comprises two supply nozzles arranged facing each other.

9. The substrate processing apparatus of claim 1, wherein, It further includes a rectifier plate, wherein the rectifier plate is configured to face the aforementioned substrate held by the aforementioned substrate holding portion.

10. The substrate processing apparatus of claim 9, wherein, The aforementioned rectifier plate includes a heating element.

11. The substrate processing apparatus of claim 9, wherein, Furthermore, it has a lifting mechanism that can raise and lower the aforementioned rectifier plate.

12. The substrate processing apparatus of claim 11, wherein, The aforementioned lifting mechanism positions the rectifier plate at a first height when the aforementioned substrate is being transported to the aforementioned substrate holding portion and when the aforementioned substrate is being transported from the aforementioned substrate holding portion, and positions the rectifier plate at a second height lower than the aforementioned first height when the aforementioned film of the aforementioned substrate is being heat-treated.

13. The substrate processing apparatus of claim 1, wherein, The aforementioned heat treatment includes a process of firing the aforementioned membrane.

14. A method for manufacturing an article, comprising: a procedure for processing a substrate using a substrate processing apparatus as described in any one of claims 1 to 13; and a procedure for processing the substrate, which has been transferred to an external space of the substrate processing apparatus, to obtain an article.

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