Multi-thermal CVD chambers with shared gas delivery and exhaust system

Abstract

This document describes a method and apparatus for a processing chamber used in heat treatment. The processing chamber is a dual-chamber design and shares a chamber body. The chamber body includes a first set of gas injection channels and a second set of gas injection channels. The chamber body may also include a first set of exhaust ports and a second set of exhaust ports. The processing chamber may have a shared gas distribution plate and / or a shared exhaust duct. The processing chamber described herein is capable of processing multiple substrates simultaneously, while improving the flow rate and heat distribution of the processing gases.

Description

Technical Field

[0001] The specific embodiments described herein generally relate to dual heat treatment chambers. More specifically, the specific embodiments described herein relate to dual epitaxial deposition chambers, wherein the two treatment chambers share one or more of a chamber body, a gas injection distribution plate, or an exhaust channel. Prior Technology

[0002] Semiconductor substrates are processed for a wide range of applications, including the production of integrated devices and microdevices. However, conventional hardware used for processing substrates is relatively large, requiring more space within the wafer fab. Furthermore, conventional hardware suffers from insufficient throughput.

[0003] Previous attempts to increase the number of substrates capable of simultaneous epitaxial processing have encountered problems with substrate surface temperature control or processing gas flow control across the substrate surface. Furthermore, these conventional approaches are expensive and require a large footprint within the workspace. Therefore, there is a need for improved thermal processing chambers in semiconductor processing. Summary of the Invention

[0004] This disclosure generally relates to an apparatus for substrate processing. In one specific embodiment, the apparatus for substrate processing includes a dual-chamber body. The dual-chamber body includes a first processing space on a first side of a central plane and a second processing space on a second side of the central plane. An equalization port connects the first processing space and the second processing space. A first plurality of gas injection channels are formed through the dual-chamber body and are in fluid communication with the first processing space, and a second plurality of gas injection channels are formed through the dual-chamber body and are in fluid communication with the second processing space. A first exhaust port is formed in the dual-chamber body opposite to the first plurality of gas injection channels. The first exhaust port is in fluid communication with the processing space. A second exhaust port is formed through the dual-chamber body in a direction opposite to the second plurality of gas injection channels. The second exhaust port is in fluid communication with the second processing space. The apparatus also includes one or more upper window assemblies disposed above the dual-chamber body. A first lower window is positioned adjacent to the first processing space, and a second lower window is positioned adjacent to the second processing space. A first substrate support is positioned in the first processing space, and a second substrate support is positioned in the second processing space. The first lower light assembly is positioned adjacent to the first lower window, and the second lower light assembly is positioned adjacent to the second lower window.

[0005] In another embodiment, the apparatus for substrate processing includes a dual-chamber body. The dual-chamber body includes a first processing space on a first side of a central plane, a second processing space on a second side of the central plane, and an equalization port connecting the first and second processing spaces. A first plurality of gas injection channels are in fluid communication with the first processing space, and a second plurality of gas injection channels are in fluid communication with the second processing space. A first exhaust port is formed in the dual-chamber body opposite to the first plurality of gas injection channels and is in fluid communication with the first processing space. A second exhaust port is formed in the dual-chamber body opposite to the second plurality of gas injection channels and is in fluid communication with the second processing space. The apparatus for the substrate also includes one or more upper window assemblies disposed above the dual-chamber body. A first lower window is positioned adjacent to the first processing space, and a second lower window is positioned adjacent to the second processing space. A first substrate support is positioned in the first processing space, and a second substrate support is positioned in the second processing space. A first lower lamp assembly is positioned adjacent to the first lower window, and a second lower lamp assembly is positioned adjacent to the second lower window.

[0006] In another specific embodiment, the dual-chamber body includes a chamber body, a first processing space formed through the chamber body on a first side of a reference plane, and a second processing space formed through the chamber body on a second side of the reference plane. A first plurality of gas injection channels are in fluid communication with the first processing space, and a second plurality of gas injection channels are in fluid communication with the second processing space. A first exhaust port is formed in the dual-chamber body opposite to the first plurality of gas injection channels and is in fluid communication with the processing space. A second exhaust port is formed in the dual-chamber body opposite to the second plurality of gas injection channels and is in fluid communication with the processing space. An equalization port connects the first processing space and the second processing space. Simple Explanation of the Diagram

[0007] Several specific embodiments can be referenced to illustrate the above-briefly summarized disclosure in a more specific manner, and to gain a more detailed understanding of the above-described features of the disclosure. The accompanying drawings illustrate some of these specific embodiments. However, it should be noted that the accompanying drawings are merely illustrative of exemplary embodiments and should therefore not be construed as limiting the scope of the embodiments, and other equivalent embodiments are acknowledged.

[0008] Figure 1 shows a schematic cross-sectional view of a processing system according to one specific embodiment described herein.

[0009] Figure 2 shows a plan view of the main chamber of the processing system in Figure 1.

[0010] Figure 3 shows a partial cross-sectional side view of a portion of the chamber body in Figure 2.

[0011] Figure 4A shows a cross-sectional plan view of the chamber body of Figure 2 according to the first specific embodiment described herein.

[0012] Figure 4B shows a cross-sectional plan view of the chamber body of Figure 2 according to the second specific embodiment described herein.

[0013] Figure 4C shows a cross-sectional plan view of the chamber body of Figure 2 according to the third specific embodiment described herein.

[0014] Figure 4D shows a cross-sectional plan view of the chamber body of Figure 2 according to the fourth specific embodiment described herein.

[0015] Figure 5 illustrates the operation of a method for processing a substrate according to a specific embodiment described herein.

[0016] Figure 6 shows a top view of a single upper window assembly positioned above the chamber bodies of the first processing chamber 101a and the second processing chamber in Figures 1 to 3.

[0017] To aid understanding, common elements in the drawings have been identified using the same element symbols whenever possible. It has been considered that elements and features of one embodiment may be beneficially incorporated into other embodiments without further description. Implementation

[0018] Specific embodiments of this disclosure generally relate to apparatus and methods for semiconductor processing, and more specifically, to thermal processing systems. The thermal processing system is an epitaxial deposition system. The thermal processing system includes a substrate support, one or more upper windows, one or more lower windows, a plurality of upper heating elements, a plurality of lower heating elements, a liner, a processing system body, one or more gas distribution disks, and one or more vacuum pumps. In some embodiments that can be combined with other embodiments, the processing system body is a dual-body system, comprising two processing chambers formed therein. These two processing chambers may share a gas distribution disk and / or an exhaust pump, such as a vacuum pump. The dual-body system can share a gas distribution disk and / or an exhaust pump. By sharing a gas distribution disk and / or an exhaust pump, equipment costs are reduced, and similarly, the system footprint is reduced. More specifically, the specific embodiments described herein relate to dual-body systems for epitaxial deposition processing.

[0019] Figure 1 shows a schematic cross-sectional view of a processing system 100 according to one specific embodiment described herein. The processing system includes a first processing chamber 101a and a second processing chamber 101b. The first processing chamber 101a and the second processing chamber 101b are substantially identical to each other. The processing chambers 101a and 101b share a chamber body 130 and a chamber body bottom 134. The processing chambers 101a and 101b may additionally include a shared cover (not shown). The processing chambers 101a and 101b are mirror images of each other about a central plane 103.

[0020] A first processing chamber 101a defines a first processing space 124 for processing a single substrate. The first processing chamber 101a includes a first upper window 116a, such as a dome, disposed between a first cover 104a and the first processing space 124. The first processing chamber 101a also includes a first lower window 118a disposed below the first processing space 124. Above the first upper window 116a are a plurality of first upper radiant heat sources 106a. The plurality of first upper radiant heat sources 106a are lamps, such as halogen lamps. The first upper radiant heat sources 106a are disposed between the first upper window 116a and the first cover 104a. The first upper radiant heat sources 106a are positioned to provide uniform heating of the substrate 155. Below the first lower window 118a are a plurality of first lower radiant heat sources 138a. The plurality of first lower radiant heat sources 138a are lamps, such as halogen lamps. A first lower radiant heat source 138a is disposed between the first lower window 118a and the bottom 134 of the chamber body. The first lower radiant heat source 138a is positioned to provide uniform heating of the substrate 155.

[0021] The second processing chamber 101b defines a second processing space 126 for processing a single substrate. The second processing chamber 101b includes a second upper window 116b, such as a dome. The second upper window 116b is disposed between the second cover 104b and the second processing space 126. The second processing chamber 101b also includes a second lower window 118b, such as a dome disposed below the second processing space 126. Above the second upper window 116b, there may be a plurality of second upper radiant heat sources 106b. The plurality of second upper radiant heat sources 106b are lamps, such as halogen lamps. The second upper radiant heat sources 106b are disposed between the second upper window 116b and the second cover 104b. The second upper radiant heat sources 106b are positioned to provide predetermined heating to the second upper window 116b. Below the second lower window 118b, there are a plurality of second lower radiant heat sources 138b. The plurality of second lower radiant heat sources 138b are lamps, such as halogen lamps. The second lower radiant heat source 138b is disposed between the second lower window 118b and the bottom 134 of the chamber body. The second lower radiant heat source 138b is positioned to provide predetermined heating for the second lower window 118b.

[0022] The first and second upper windows 116a, 116b and the first and second lower windows 118a, 118b are permeable to infrared radiation (defined as transmitting at least 95% of infrared radiation). In some embodiments, the first and second upper windows 116a, 116b and the first and second lower windows 118a, 118b may be made of quartz. In some embodiments, the first upper window 116a and the second upper window 116b include an inner window 212 and an outer window support 214. The inner window 212 may be a thin quartz window and partially defines processing spaces 124, 126. The outer window support 214 supports the inner window 212 and is at least partially arranged within a support recess 304 (Figures 2 and 3).

[0023] In some specific embodiments, the first upper window 116a and the second upper window 116b may be a single window, such that a single upper window assembly 600 is disposed above both the first processing chamber 101a and the second processing chamber 101b (FIG. 6). The single upper window assembly 600 can help eliminate the pressure gradient across the first processing chamber 101a and the second processing chamber 101b, and reduce the temperature gradient across the single upper window 616. The single upper window 616 also eliminates the need for a central wall (such as central wall 132). The single upper window 616 is described in more detail in FIG. 6 and the accompanying text.

[0024] The processing system 100 also includes base assemblies 150 and 152, which are respectively disposed in a first processing chamber 101a and a second processing chamber 101b. A liner 120 is disposed within each of the first and second processing chambers 101a and 101b, and surrounds each base assembly 150, 152. Base assembly 150 is at least partially disposed within the first processing chamber 101a, and base assembly 152 is at least partially disposed within the second processing chamber 101b. The liner 120 isolates the chamber body 130 from the processed chemicals in the first and second processing spaces 124, 126. Each processing chamber in the first and second processing chambers 101a and 101b includes a liner 120. The chamber body 130 is disposed between an upper window 116 and a lower window 118. The liner 120 is disposed within the first and second processing chambers 101a and 101b. Each liner 120 is disposed between one of the processing spaces 124, 126 and the chamber body 130. The exhaust chamber 170 partially surrounds the processing spaces 124, 126, and forms one or more exhaust ports 172a, 172b through a gasket 120 connecting the exhaust chamber 170 and the processing spaces 124, 126.

[0025] The first processing chamber 101a and the second processing chamber 101b share a gas distribution plate 108 and a vacuum pump 110. The gas distribution plate 108 can be two separate gas distribution plates or a shared gas distribution plate. When using the shared gas distribution plate 108, both the first processing chamber 101a and the second processing chamber 101b are supplied with gas by the same gas distribution plate 108. The gas passage 108 supplies the processed gas to the first and second processing spaces 124 and 126 via a conduit 123 and first and second gas injection channels 182a, 182b. The gas distribution plate 108 uniformly distributes the gas between the first processing space 124 and the second processing space 126. The gas distribution plate 108 is connected to the conduit 123. The conduit 123 splits into two additional conduits 127a and 127b. The conduit 123 may include a flow divider. The flow divider is arranged between the conduit 123 and the conduits 127a and 127b. The flow divider controls the gas flow to each conduit 127a and 127b. In some specific embodiments, the flow controller includes a valve or a mass flow controller. Two additional conduits 127a, 127b respectively distribute gas from conduit 123 to first and second gas injection channels 182a, 182b. Conduits 127a, 127b have flow restrictors 121a, 121b disposed therein. Flow restrictors 121a, 121b control the flow of process gas through conduits 127a, 127b. Flow restrictors 121a, 121b can additionally measure the flow rate of process gas through conduits 127a, 127b. Flow restrictors 121a, 121b control and balance the flow rate of process gas exiting gas distribution disc 108, thereby ensuring that the flow rate of process gas is the same in both conduits 127a, 127b. Flow restrictors 121a, 121b can be, for example, valves, mass flow controllers, or other flow limiting devices. Flow restrictors 121a and 121b can be attached to or used in place of a precision flow controller (not shown) coupled to conduit 123. Gases that can be supplied by gas distribution disc 108 include process gases, such as purified gases, cleaning gases, and sedimentation gases.

[0026] The first processing chamber 101a and the second processing chamber 101b also include a first separate gas distribution plate 115 and a second separate gas distribution plate 117. The first separate gas distribution plate 115 supplies processing gas to the first processing space 124 via a first gas injection channel 182a. The second separate gas distribution plate 117 supplies processing gas to the second processing space 126 via a second gas injection channel 182b. The first and second separate gas distribution plates 115 and 117 are used if the flow restrictors 121a, 121b cannot properly balance the processing gas flow from the shared gas distribution plate 108, or if supplemental gas is used for a specific process. Gases that can be supplied by the first separate gas distribution plate 115 and the second separate gas distribution plate 117 include deposition gas and carrier gas.

[0027] In some embodiments, both the shared gas distribution disk 108 and the first and second separate gas distribution disks 115, 117 are utilized. In other embodiments, only the shared gas distribution disk 108 is utilized. In other embodiments, both the first and second separate gas distribution disks 115, 117 are utilized. In embodiments where the shared gas distribution disk 108 provides at least some of the processed gases, the cost of the gas injection system can be reduced.

[0028] The first processing chamber 101a is connected to the gas distribution plate 108 via a first gas injection channel 182a. The first gas injection channel 182a is in fluid communication with the first processing space 124, such that the first gas injection channel 182a supplies processing gas from the gas distribution plate 108 to the first processing space 124.

[0029] Process gas supplied from gas distribution disk 108 is introduced into the first processing space 124 via a first gas injection channel 182a formed in the sidewall of chamber body 130, such that gas distribution disk 108 is a process gas distribution disk. The first gas injection channel 182a is configured to guide the process gas toward base assembly 150 in a substantially radially inward direction. Thus, in some embodiments, the first gas injection channel 182a may be a cross-flow gas injector. The cross-flow gas injector is positioned to guide the process gas across the surface of substrate 155 and / or support surface 154. In the thin film formation process, the support surface 154 is located at the processing position (adjacent to the first gas injection channel 182a and at approximately the same height as the first gas injection channel 182a), allowing the process gas to flow substantially along flow path 205 across the upper surface of substrate 155 and / or support surface 154. The process gas exits the first processing space 124 through the first exhaust port 172a, which is located on the side of the first processing space 124 opposite to the first gas injection channel 182a. The removal of the process gas passing through the first exhaust port 172a can be facilitated by a vacuum pump 110.

[0030] Gas distribution plate 108 is attached to second gas injection channel 182b. Second gas injection channel 182b is in fluid communication with second processing space 126, such that second gas injection channel 182b provides processing gas from gas distribution plate 108 to second processing space 126.

[0031] Processing gas supplied from gas distribution plate 108 is introduced into second processing space 126 via a second gas injection channel 182b formed in the sidewall of chamber body 130. The second gas injection channel 182b is configured to guide the processing gas in a generally radially inward direction. Thus, in some embodiments, the second gas injection channel 182b may be a cross-flow gas injector. The cross-flow gas injector is positioned to guide the processing gas across the surface of substrate 155 and / or support surface 154. In the thin film formation process, the support surface 154 is located at the processing position (adjacent to the second gas injection channel 182b and at approximately the same height as the second gas injection channel 182b), allowing the processing gas to flow substantially along flow path 205 across the upper surface of substrate 155 and / or support surface 154. The processing gas exits second processing space 126 through a second exhaust port 172b located on the side of first processing space 126 opposite to the second gas injection channel 182b. The removal of the process gas passing through the second exhaust port 172b can be facilitated by the vacuum pump 110.

[0032] Purified gas supplied from purified gas source 185 is introduced into the bottom region 105 of the first processing space 124 and the second processing space 126 through the first and second purified gas inlets 184a and 184b formed in the side wall of the chamber body 130.

[0033] Purified gas source 185 is in fluid communication with conduit 125. Conduit 125 transmits purified gas from purified gas source 185. Conduit 125 branches into two additional conduits 129a and 129b. Conduits 129a and 129b connect conduit 125 to first and second purified gas inlets 184a and 184b. Purified gas source 185 is in fluid communication with first and second purified gas inlets 184a and 184b via conduits 125 and 129a and 129b. First purified gas inlet 184a is in fluid communication with conduit 129a, and second purified gas inlet 184b is in fluid communication with conduit 129b. First and second purified gas flow restrictors 119a and 119b are used to balance the purified gas flow through conduits 129a and 129b. The first and second purified gas flow restrictors 119a and 119b balance the flow rate so that the flow rate through each conduit 129a and 129b is the same.

[0034] The first purified gas inlet 184a is disposed at a height below the first gas injection channel 182a. If a gasket 120 is used, the gasket 120 may be disposed between the first gas injection channel 182a and the first purified gas inlet 184a. In either case, the first purified gas inlet 184a is configured to guide the purified gas in a generally radially inward direction. The first purified gas inlet 184a may also be configured to guide the purified gas in an upward direction. During the thin film formation process, the base assembly 152 is positioned such that the purified gas flows generally along the flow path 210 across the back of the support surface 154. The purified gas exits the bottom region 105 and exits the processing chamber via a first exhaust port 172a, which is located on the side of the first processing space 101a opposite to the first purified gas inlet 184a.

[0035] The second purge gas inlet 184b is disposed at a height below the second gas injection channel 182b. If a gasket 120 is used, a portion of the gasket 120 may be disposed between the second gas injection channel 182b and the second purge gas inlet 184b. In either case, the second purge gas inlet 184b is configured to guide the purge gas in a generally radially inward direction. The second purge gas inlet 184b may also be configured to guide the purge gas in an upward direction. During the thin film formation process, the base assembly 152 is positioned such that the purge gas flows generally along the flow path 210 across the back of the support surface 154. The purge gas exits the bottom region 105 and exits the processing chamber via a second exhaust port 172b, which is located on the side of the second processing space 101b opposite to the second purge gas inlet 184b.

[0036] Vacuum pump 110 is in fluid communication with exhaust chamber 170, thereby allowing processing spaces 124, 126 to be evacuated via a plurality of exhaust ports 172a, 172b and exhaust chamber 170. Exhaust chamber 170 is coupled to a common exhaust duct 171. Common exhaust duct 171 is connected to exhaust outlet pipe 128, which extends through the bottom 134 of the chamber body to pump duct 174. Pump duct 174 is coupled to vacuum pump 110 to facilitate the pumping of gas from common exhaust duct 171. Common exhaust valve 173 is disposed on pump duct 174 between common exhaust duct 171 and vacuum pump 110. Common exhaust valve 173 can be opened or closed according to desired pumping operation.

[0037] Support surfaces 154 of base assemblies 150, 152 are disposed within processing spaces 124, 126. Support surfaces 154 are generally configured to support the top of base assemblies 150, 152 of the substrate during processing. Bottom regions 105 of chambers 101a, 101b are defined between the bottom 134 of the chamber body and the support surfaces 154 of the base assemblies 150, 152. Each base assembly 150, 152 has a rod 156 extending from the bottom surface of each base assembly 150, 152 through the bottom 134 of the chamber body 130. Rods 156 are coupled to a corresponding motor 164, which is configured to independently raise, lower, and / or rotate each base assembly 150, 152.

[0038] A base bellows port 160 is formed in the bottom 134 of the chamber body 130. The base bellows port 160 extends through the bottom 134 of the chamber body 130. The diameter of each base bellows port 160 is larger than the diameter of the rod 156, and each rod 156 is externally connected at a position where the rod 156 extends through the bottom 134 of the chamber body 130. The base bellows port 160 circumferentially surrounds the rod 156.

[0039] Bellows assemblies 158 are arranged around each base bellows port 160 to prevent vacuum leakage to the outside of the chamber body 130. Each bellows assembly 158 externally connects to and surrounds a portion of one of the rods 156 disposed outside the chamber body 130. The bellows assembly 158 is coupled between the outer surface of the bottom 134 of the chamber body 130 and the base member 180. The base member 180 may accommodate a motor 164 and a portion of the rod 156 connected to the motor 164.

[0040] The bellows assembly 158 may be formed of metal or metallized material and is configured to form an airflow passage 162. The airflow passage 162 is defined as the region between the rod 156 and the bellows assembly 158. The airflow passage 162 extends from the base bellows port 160 to the base member 180. Thus, the airflow passage 162 forms a hollow cylindrical channel between the bellows assembly 158 and the rod 156. The airflow passage 162 is fluidly coupled between the bottom region 105 and the exhaust duct 178. The exhaust duct 178 extends from the airflow passage 162 through the base member 180 to the pump duct 174. A valve 179 is provided on the exhaust duct 178 between the airflow passage 162 and the pump duct 174. When the valve 179 is closed, pumping can be performed via the exhaust chamber 170, and when the valve 179 is open, pumping can be performed via the base bellows port 160. When valve 179 is open, common exhaust valve 173 can be closed to enhance pumping to bottom region 105 via base bellows port 160.

[0041] In one specific embodiment of the pumping process, the bottom region 105 of each chamber 101a, 101b is pumped via a base bellows port 160. Gases and particles present in the bottom region 105 reach the vacuum pump 110 through the base bellows port 160, the airflow passage 162, and the exhaust duct 178. In this specific embodiment, the common exhaust valve 173 is closed, while the valve 179 is open, allowing the pump to be in fluid communication with the bottom region 105. Pumping via the base bellows port 160 is performed during chamber cleaning processes, such as when the chambers are empty and the substrate is not being processed. In the base bellows pumping process, an inert gas may also be supplied to the chambers 101a, 101b. For example, argon is supplied to both chambers 101a, 101b from either the gas distribution plate 108 or the purge gas source 185. It is believed that argon gas supplied via gas distribution plate 108 or purified gas source 185 can more effectively clean and pump the bottom area 105.

[0042] In one embodiment, a gas source 168 is fluidly coupled to each bottom region 105 via an airflow passage 162 and a base bellows port 160. The gas source 168 may be configured to deliver inert or clean gas to the bottom region 105. Although schematically shown as being physically very close to system 100, the gas source 168 is typically a remote gas source from system 100. The gas source 168 is coupled to a conduit 176, which extends from the gas source 168 through the base member 180. The conduit 176 is in fluid communication with the airflow passage 162. A valve 177 is disposed on the conduit 176 between the gas source 168 and the base member 180.

[0043] In one embodiment, an inert gas or a purge gas is supplied to the bottom region 105. During operation, the purge gas is supplied to the bottom region 105 via a flow path from gas source 168 through conduit 176 (with valve 177 open), airflow passage 162, and base bellows port 160. During substrate processing in chambers 101a and 101b, the purge gas is supplied from gas source 168. Suitable purge gases include inert gases such as helium, neon, and argon. However, other non-reactive gases may also be used.

[0044] It is believed that allowing the purge gas to flow during substrate processing prevents particles and contaminants from falling below the support surface 154 and depositing on the surfaces of chambers 101a, 101b defining the bottom region 105. During purge via the base bellows port 160, pumping of chambers 101a, 101b is performed via an exhaust chamber 170 and a vacuum pump 110. At least a portion of the plurality of exhaust ports 172 and exhaust chamber 170 is substantially coplanar with the support surface 154. Purge gas is drawn from the bottom region 105 via pumping through the exhaust chamber 170. In this specific embodiment, purge gas and contaminants are discharged from chambers 101a, 101b without contaminants falling below the support surface 154. However, it is conceivable that pumping and purge via the bellows assembly 158 can be omitted. In such an example, the corresponding hardware for pumping and purge via the bellows assembly 158 can also be omitted.

[0045] System 100 also includes an equalization port 140 disposed through a central wall 132 of the system. The central wall 132 separates chambers 101a and 101b and defines at least a portion of a bottom region 105. The equalization port 140 includes a first opening 140a in fluid communication with the bottom region 105 of the first processing chamber 101a. The equalization port 140 also includes a second opening 140b in fluid communication with the bottom region 105 of the second processing chamber 101b. Each of the first opening 140a and the second opening 140b is disposed on opposite sides of the equalization port 140 and is in fluid communication with each other. The equalization port 140 may be formed in the central wall 132 or through the region defining the bottom region 105 of the chamber body 130. The equalization port 140 is disposed below the support surface 154 and the exhaust chamber 170. The equalization port 140 extends from the bottom region 105 of each chamber 101a, 101b through the central wall 132 and makes the bottom regions 105 of each chamber 101a, 101b fluidly connected to each other.

[0046] A conduit 144 extends from the equalization port 140 through the central wall 132 and exits at the bottom 134 of the chamber body 130 at the outlet 142. The conduit 144 fluidly couples the equalization port 140 to the exhaust conduit 178. A valve 143 is disposed on the conduit 144 between the outlet port 142 and the exhaust conduit 178. Therefore, when the valve 143 is open, the bottom region 105 is in fluid communication with the vacuum pump 110.

[0047] In one example, bottom region 105 is vented via a pumping process through equalization port 140. The pumping process through equalization port 140 is performed when the chamber is idle (e.g., during an idle cleaning process). To enable pumping via equalization port 140, vent valve 173 is closed and valve 143 is opened. Thus, vacuum pump 110 is in fluid communication with bottom region 105 via conduit 144 and equalization port 140. By closing vent valve 173, venting of chambers 101a and 101b is performed via equalization port 140 instead of venting chamber 170.

[0048] During the evacuation process at the equalization port 140, the vacuum pump 110 removes gases and contaminants from the bottom region 105 via the equalization port 140 and the conduit 144. During the pumping process at the equalization port 140, inert gases can also be supplied to chambers 101a and 101b. For example, argon gas can be supplied to both chambers 101a and 101b from the gas distribution plate 108. It is believed that the argon gas supplied by the gas distribution plate 108 can more effectively clean and pump the bottom region 105. The removal of unwanted contaminants from the bottom region 105 via pumping through the equalization port 140 without utilizing the exhaust chamber 170 increases the functionality of the system 100.

[0049] In addition, the equalization port 140 equalizes the pressure between each chamber 101a, 101b during substrate processing. This equalization of pressure within chambers 101a, 101b results in more consistent deposition outcomes among the processed substrates within each chamber 101a, 101b.

[0050] In one embodiment, a gas source 148 is fluidly coupled to a bottom region 105 via a conduit 144 and an equalization port 140. The gas source 148 may be configured to deliver an inert gas or a clean gas to the bottom region 105. Although schematically shown as being physically very close to system 100, the gas source 148 is typically a remote gas source from system 100. The gas source 148 is connected to a conduit 146 extending from the gas source 148 to the conduit 144. A valve 145 is disposed on the conduit 146 between the gas source 148 and the conduit 144.

[0051] In one embodiment, an inert gas or a purging gas is supplied to the bottom region 105. During operation, the purging gas is supplied to the bottom region 105 along a flow path from the gas source 148 via conduits 146 and 144 of the open valve 145 and the equalization port 140. During idle cleaning, the purging gas is supplied from the gas source 148. Suitable purging gases include inert gases such as helium, neon, and argon. However, other non-reactive gases may also be used.

[0052] An opening 136 is formed to pass through each of the first processing chamber 101a and the second processing chamber 101b. The opening 136 can be used to transfer a substrate in and out of the first processing space 124 and the second processing space 126. In some embodiments, the opening 136 is a slit valve. In other embodiments, the opening 136 can be connected to any suitable valve that allows the substrate 155 to pass through.

[0053] In one embodiment, each of the first processing chamber 101a and the second processing chamber 101b may further include one or more temperature sensors 201, such as optical pyrometers, which measure the temperature within the first processing chamber 101a and the second processing chamber 101b and on the surface of the substrate 155. One or more temperature sensors 201 are disposed on the first cover 104a and the second cover 104b. One or more high-energy radiation source components 202, such as focused high-energy radiation source components, such as laser source components, may be disposed on the first cover 104a and the second cover 104b. The one or more high-energy radiation source components 202 may generate one or more high-energy radiation beams to locally heat the substrate 155. The one or more high-energy radiation source components 202 may be one or more point heater components.

[0054] Figure 2 shows a plan view of the chamber body 130 of the processing system of Figure 1. The chamber body 130 includes two main body portions 415a and 415b, two interface surfaces 308, two inlet portions 310, an upper ring assembly 320, a lower ring assembly 318, and a first exhaust port 172a and a second exhaust port 172b. The chamber body 130 surrounds the first processing chamber 101a and the second processing chamber 101b.

[0055] Each of the first processing chamber 101a and the second processing chamber 101b (illustrated in FIG. 1) forms a first half 326 and a second half 328 of a chamber body 130. The first half 326 of the chamber body 130 defines a first main body portion 415a. The second half 328 of the chamber body 130 defines a second main body portion 415b. The first half 326 and the second half 328 of the chamber body 130 are disposed on opposite sides of a central plane 103. The central plane 103 divides the chamber body 130 in two such that the first half 326 of the chamber body 130 is a mirror image of the second half 328 of the chamber body 130.

[0056] The upper ring assembly 320 is the upper portion of the chamber body 130. The upper ring assembly 320 at least partially surrounds the first processing space 124 and the second processing space 126. The upper ring assembly 320 can be a single continuous body or multiple components fastened together. In a specific embodiment where the upper ring assembly 320 is a continuous body, the upper ring assembly 320 is described as an integral upper assembly. Using the integral assembly for the upper ring assembly 320 ensures that each processing chamber in the first processing chamber 101a and the second processing chamber 101b is located in the same vertical position. Using the integral upper ring assembly 320 also ensures that the equalizing port 140 allows fluid communication between the first processing space 124 and the second processing space 126 without having to manage potential alignment errors or seal damage between the first body portion 415a and the second body portion 415b. The upper ring assembly 320 includes an inlet portion 310, a gas passage 312, a first chamber 235, a second chamber 240, a first chamber wall 302, and a second chamber wall 303. The first cavity wall 302 of the first cavity 235 is the outer wall of the first cavity 235. The second cavity wall 303 of the second cavity 240 is the outer wall of the second cavity 240.

[0057] Each of the first half 326 and the second half 328 includes an interface surface 308. The interface surface 308 includes an opening 136 for transferring and removing the substrate 155 from the first processing chamber 101a and the second processing chamber 101b. The interface surface 308 may be connected to another set of processing chambers, a factory interface transfer chamber (not shown). The interface surface 308 is a flanged surface disposed from the first processing chamber 101a and the second processing chamber 101b.

[0058] Each of the first half 326 and the second half 328 further includes an inlet portion 310. The inlet portion 310 is part of the upper ring assembly 320. The inlet portion 310 is the portion of the upper ring assembly 320 in which a gas passage 312 is formed. The inlet portion 310 may be a continuous portion of the upper ring assembly 320 or may be separate from the upper ring assembly 320. The inlet portion 310 extends outwardly from a sidewall 225 of the upper ring assembly 320. The sidewall 225 is part of the outer surface 230 of the upper ring assembly 320.

[0059] Gas passage 312 is in fluid communication with gas distribution plate 108 and purified gas source 185. Gas passage 312 can be a plurality of individual gas passages 312. Each of the plurality of gas passages 312 is used to allow one or more process gases to flow into a first processing space 124 and a second processing space 126 via a first injection passage 182a and a second injection passage 182b. In an exemplary embodiment that can be combined with other embodiments, gas passage 312 is formed as an inlet portion 310 through the first body portion 415a and the second body portion 415b. Gas passage 312 is fluidly connected to a first injection passage 182a. The first injection passage 182a is in fluid communication with the first processing space 124. In this embodiment, there is an additional gas passage 312 formed through the inlet portion of the second body portion 415b. Gas passage 312 formed through the inlet portion 310 of the second body portion 415b is fluidly connected to a second injection passage 182b. The second injection passage 182b is in fluid communication with the second processing space 126. The gas passage 312 may include a plurality of gas passages 312, such as four or more gas passages 312, five or more gas passages 312, six or more gas passages 312, eight or more gas passages 312, ten or more gas passages 312, or twelve or more gas passages 312.

[0060] The lower ring assembly 318 is disposed below the upper ring assembly 320. The lower ring assembly 318 is the lower part of the chamber body 130 (as shown in FIG. 1). The lower ring assembly 318 at least partially surrounds the first processing space 124 and the second processing space 126. The lower ring assembly 318 may be a single continuous body or may be multiple parts fastened together. In a particular embodiment where the lower ring assembly 318 is a continuous body, the lower ring assembly 318 may be described as an integral lower ring assembly. Using the integral lower ring assembly for the lower ring assembly 318 ensures that each processing chamber in the first processing chamber 101a and the second processing chamber 101b is located in the same vertical position. Using the integral lower ring assembly 318 also ensures that the equalizing port 140 allows the first processing space 124 and the second processing space 126 to be in fluid communication with each other without having to manage potential alignment errors or seal damage between the first processing chamber 101a and the second processing chamber 101b. The lower ring assembly 318 includes first and second exhaust ports 172a and 172b, a first chamber 235, a second chamber 240, a first chamber wall 302, and a second chamber wall 303. The first chamber wall 302 of the first chamber 235 is the outer wall of the first chamber 235. The second chamber wall 303 of the second chamber 240 is the outer wall of the second chamber 240. An equalization port 140 is disposed between each of the first and second processing chambers 101a and 101b via the lower ring assembly 318. Alternatively, the equalization port 140 is disposed through the upper ring assembly 320.

[0061] The first exhaust port 172a and the second exhaust port 172b may be disposed on the side of the chamber body 130 opposite to the first injection channel 182a and the second injection channel 182b (e.g., approximately 180 degrees) to facilitate cross-flow. The first exhaust port 172a and the second exhaust port 172b may be formed in the lower ring assembly 318, thus the first exhaust port 172a and the second exhaust port 172b are vertically disposed below the first gas injection channel 182a and the second gas injection channel 182b. The first exhaust port 172a is disposed opposite to the first injection channel 182a, and the second exhaust port 172b is disposed opposite to the second injection channel 182b. The positioning of the first exhaust port 172a allows gas from the first injection channel 182a to flow horizontally within the first processing space 124. The positioning of the second exhaust port 172b allows gas from the second injection channel 182b to flow horizontally within the second processing space 126. The first exhaust port 172a and the second exhaust port 172b extend from the first chamber wall 302 and the second chamber wall 303 to the outer surface 245 of the lower ring assembly 318.

[0062] A support groove 304 is disposed in each of the first body portion 415a and the second body portion 415b, adjacent to the first chamber wall 302 and the second chamber wall 303. The support groove 304 is a lip extending about the diameter of the first chamber wall 302 and the second chamber wall 303. The support groove 304 may be shaped to receive and support the edges of the first and second upper windows 116a, 116b (as shown in FIG. 1). The support groove 304 may be vertically offset from and lower than the remainder of the top surface 306 of the upper ring assembly 320.

[0063] In some specific embodiments, the chamber body 130 is divided into a first side 322 and a second side 324. The first side 322 and the second side 324 are on opposite sides of a reference plane 107. The reference plane is the longitudinal axis of the chamber body 130. The reference plane 107 is perpendicular to the central plane 103. The reference plane 107 divides the chamber body 130 such that the first side 322 of the chamber body 130 is on one side of the reference plane 107, and the second side 324 of the chamber body 130 is on the side of the reference plane 107 opposite to the first side 322. A first body portion 415a is the first side 322 of the chamber body 130, and a second body portion 415b is the second side 324 of the chamber body 130. In one exemplary specific embodiment, the interface surface 308, the inlet portion 310, and the gas passage 312 are all in the first side 322, while the first exhaust port 172a and the second exhaust port 172b are in the second side 324. In other specific embodiments, the interface surface 308 is in the first side, and the inlet portion 310, the gas passage 312, and the first exhaust port 172a and the second exhaust port 172b are separated between the first side 322 and the second side 324.

[0064] The first cavity 235 and the second cavity 240 are separated by a minimum distance 381. The minimum distance 381 is the minimum distance between the first cavity wall 302 and the second cavity wall 303. The minimum distance can be the minimum width of the central wall 132. Depending on the specific embodiment, the minimum distance 381 varies, causing the thickness of the central wall 132 to vary. In a specific embodiment where the first upper window 116a and the second upper window 116b are separated, the minimum distance 381 is greater than zero millimeters, for example, greater than one millimeter. In a specific embodiment where the first upper window 116a and the second upper window 116b are replaced by a single upper window 616 (FIG. 6), the minimum distance 381 can be neglected, making the minimum distance 381 zero millimeters thick, and the central wall 132 has an opening formed through the central wall 132. In this specific embodiment, the balanced port 140 may not be formed through the central wall 132. In some specific embodiments, when the minimum distance 381 is reduced to zero millimeters and the minimum width of the central wall 132 is zero millimeters, the first chamber 235 and the second chamber 240 are still separated by an air curtain or a portion of a liner 120 disposed between the first chamber 235 and the second chamber 240.

[0065] Figure 3 shows a cross-sectional side view of a portion of the chamber body 130 of Figure 2. The portion of the chamber body 130 shown in Figure 3 is the second half 328 of the chamber body 130. The first half 326 is similar to the second half 328. The second purified gas inlet 184b, the second gas injection channel 182b, the support groove 304, and the opening 136 of the second processing chamber 101b can also represent the first purified gas inlet 184a, the first gas injection 182a, the support groove 304, the first processing chamber 101a, and the opening 136 of the first side. The chamber body 130 includes an upper ring assembly 320 and a lower ring assembly 318.

[0066] Figure 3 illustrates the relationship between the first and second gas injection channels 182a and 182b, the first and second purified gas inlets 184a and 184b, and the opening 136. The first and second gas injection channels 182a and 182b, and the first and second purified gas inlets 184a and 184b, are disposed within the upper ring assembly 320. The first and second gas injection channels 182a and 182b are positioned above the first and second purified gas inlets 184a and 184b. In some specific embodiments, each of the first and second gas injection channels 182a and 182b may have at least four (e.g., five or more) first and second gas injection channels 182a and 182b, for example, six or more, eight or more, ten or more, or twelve or more. In similar specific embodiments, each of the first and second purified gas inlets 184a and 184b may have at least four (e.g., five or more) first and second purified gas inlets 184a and 184b, for example, six or more, eight or more, ten or more, or twelve or more. Each gas injection channel in the first and second gas injection channels 182a and 182b, and each purified gas inlet in the first and second purified gas inlets 184a and 184b, are parallel to each other. The first and second gas injection channels 182a and 182b, and the first and second purified gas inlets 184a and 184b, are spaced apart along the inner walls of the first and second processing chambers 101a and 101b.

[0067] Opening 136 is located below the second gas injection channel 182b and the second purified gas inlet 184b. As previously described with reference to FIG. 1, the size and position of opening 136 are configured to allow substrate 155 to pass through it. Opening 136 may be able to be closed using a valve. In some specific embodiments, opening 136 is located directly below the second gas injection channel 182b and the second purified gas inlet 184b. Alternatively, opening 136 is arranged adjacent to the second gas injection channel 182b and the second purified gas inlet 184b but angularly offset. Specific embodiments in which opening 136 would be located in the alternative position shown in FIG. 3 are described in FIGS. 4B to 4D and the accompanying description. Support recess 304 is located above the second gas injection channel 182b and the second purified gas inlet 184b. As shown in FIG. 4A, the first exhaust port 172a and the second exhaust port 172b are configured opposite to the first gas injection channel 182a and the second gas injection channel 182b. The first exhaust port 172a and the second exhaust port 172b include a plurality of exhaust ports, such that each of the first exhaust port 172a and the second exhaust port 172b has at least two exhaust ports, such as three or more exhaust ports, such as four or more exhaust ports, such as five or more exhaust ports.

[0068] Figure 4A shows a cross-sectional plan view of the chamber body 430a (similar to the chamber body 130 of Figure 2 according to the first specific embodiment described herein). The cross-sectional view of the chamber body 430a shows the relationship between the opening 136, the first and second gas injection channels 182a, 182b, and the first and second exhaust ports 172a, 172b. The chamber body 430a of Figure 4A also includes an equalization port 140.

[0069] The gas injection chord length 404 is the chord length of a gas injection channel from one end of the first gas injection channel 182a or the second gas injection channel 182b to the other end of the first gas channel 182a or the second gas injection channel 182b. The gas injection channel defining the gas injection chord length 404 is a gas injection channel located at the opposite extremes of the first gas injection channel 182a and the second gas injection channel 182b. As described herein, the gas injection chord length 404 is less than 500 mm, for example less than 450 mm, for example less than 400 mm. The gas injection chord length 404 is greater than 150 mm, for example greater than 200 mm. The gas injection chord length 404 is configured to allow the process gas to flow across the entire surface of the substrate.

[0070] The exhaust port chord length 406 is the chord length from the outer edge of the exhaust port at one end of the first exhaust port 172a or the second exhaust port 172b to the edge of the exhaust port at the other end of the first exhaust port 172a or the second exhaust port 172b. The exhaust port used to define the exhaust port chord length 406 is the exhaust port at the opposite extreme of the first exhaust port 172a and the second exhaust port 172b. The exhaust port chord length 406 is less than 500 mm, for example less than 450 mm, for example less than 400 mm. The exhaust port chord length 406 is greater than 150 mm, for example greater than 200 mm.

[0071] The gas injection chord length 404 can be similar to the exhaust port chord length 406. In some specific embodiments, the gas injection chord length 404 can be less than or greater than the exhaust port chord length 406 by about 10%, for example, less than or greater than about 5%, or less than or greater than 1%.

[0072] In the specific embodiment shown in Figure 4A, all the first and second gas injection channels 182a, 182b, the first and second purified gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned parallel to each other. The opening 136 in the chamber body 430a is positioned parallel to all the first and second gas injection channels 182a, 182b, the first and second purified gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b. The opening 136 of the first main body portion 415a is located directly below the first gas injection channel 182a. The opening 136 of the second main body portion 415b is located directly below the second gas injection channel 182b.

[0073] A balancing port 140 is disposed between the first main body portion 415a and the second main body portion 415b. The balancing port 140 connects the first processing space 124 and the second processing space 126 to each other.

[0074] The process gas flow path 408 passes through the first processing space 124 and proceeds from the first gas injection channel 182a or the first purified gas inlet 184a (shown in FIG. 1) to the first exhaust port 172a. The process gas flow path 408 also traverses the second processing space 126 and proceeds from the second gas injection channel 182b or the second purified gas inlet 184b (shown in FIG. 1) to the second exhaust port 172b. Although shown as a curve in FIG. 4A, the process gas flow path 408 is preferably a straight line and flows over the substrate 155 in each of the first processing space 124 and the second processing space 126.

[0075] The first gas injection channel 182a and the second gas injection channel 182b, as well as the first exhaust port 172a and the second exhaust port 172b, are each bisected by a first flow path plane 410a. One of the first flow path planes 410a extends through the first body portion 415a and the second body portion 415b. The first flow path plane 410a is parallel to the flow of the processed gas from the first and second gas injection channels 182a, 182b to the first and second exhaust ports 172a, 172b. The first flow path plane 410a is perpendicular to a reference plane 107 (e.g., perpendicular to the longitudinal axis of the chamber body 430), and thus forms an angle α of 90 degrees between the first flow path plane 410a and the reference plane 107. However, it is conceivable that the angle α may deviate from 90 degrees, such that the first flow path plane 410a and the reference plane 107 are not perpendicular. In some exemplary embodiments, the angle α is approximately 80 degrees to approximately 100 degrees, for example, approximately 85 degrees to approximately 95 degrees.

[0076] The specific embodiment of Figure 4A enables the use of a shared gas distribution plate (e.g., gas distribution plate 108) and a shared exhaust (e.g., a common exhaust duct 171) (see Figure 1). Using a shared gas distribution plate and a shared exhaust reduces system cost while still achieving high precision in heating and processing gas flow within the first processing space 124 and the second processing space 126. The orientation of the first and second gas injection channels 182a, 182b, the first and second purified gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b provides space for the shared gas distribution plate and the shared exhaust distribution plate.

[0077] Figure 4B shows a cross-sectional plan view of chamber body 430b, which can replace chamber body 130 of Figure 2 according to the second embodiment described herein. In the second embodiment described in Figure 4B, first and second gas injection channels 182a, 182b, first and second purified gas inlets 184a, 184b, and first and second exhaust ports 172a, 172b are positioned parallel to reference plane 107. The cross-sectional view of chamber body 430b shows the relationship between opening 136, first and second gas injection channels 182a, 182b, and first and second exhaust ports 172a, 172b. Chamber body 430b of Figure 4A also includes an equalization port 140.

[0078] In the exemplary embodiment of FIG4B, all first and second gas injection channels 182a, 182b, first and second purified gas inlets 184a, 184b, and first and second exhaust ports 172a, 172b are positioned parallel to each other and aligned with each other (e.g., parallel to the longitudinal axis of the chamber body 430). The openings 136 in the first and second body portions 415a, 415b are positioned parallel to all first and second gas injection channels 182a, 182b, first and second purified gas inlets 184a, 184b, and first and second exhaust ports 172a, 172b. The opening 136 of the first processing chamber 101a is located between the positions of the first gas injection channel 182a and the first exhaust port 172a. The opening 136 of the second processing chamber 101b is located between the positions of the second gas injection channel 182b and the second exhaust port 172b.

[0079] An equalization port 140 is disposed between the first main body portion 415a and the second main body portion 415b. In the specific embodiment described in FIG4B, the equalization port 140 is aligned with the first and second gas injection channels 182a, 182b. The equalization port 140 is below the first and second gas injection channels 182a, 182b and connects the first and second processing spaces 124, 126 to each other.

[0080] The gas injection chord length 404 and exhaust port chord length 406 in Figure 4B are defined in the same manner as those in Figure 4A. The process gas flow path 408 in Figure 4B is also defined in the same manner as that in Figure 4A. In the specific embodiment disclosed in Figure 4B, the process gas flow path 408 radiates from the central wall 132 of the chamber body 430 and moves toward the outer edge of the chamber body 430. Process gas flowing from the first gas injection channel 182a flows to the first exhaust port 172a, and process gas flowing from the second gas injection channel 182b flows to the second exhaust port 172b.

[0081] As shown in Figure 4A, the first and second gas injection channels 182a, 182b and the first and second exhaust ports 172a, 172b are all bisected by a second flow path plane 410b. The second flow path plane 410b extends through the first body portion 415a and the second body portion 415b. In the specific embodiment of Figure 4B, the second flow path plane 410b is coplanar or forms a single plane passing through the chamber body 430. The second flow path plane 410b is parallel to the flow of processed gas from the first and second gas injection channels 182a, 182b to the first and second exhaust ports 172a, 172b. In the specific embodiment of Figure 4B, the second flow path plane 410b is parallel to a reference plane 107. The second flow path plane 410b and the reference plane 107 form an angle α. In the specific embodiment described in Figure 4B, the angle α is approximately 0 degrees. In some exemplary embodiments, the angle α deviates from 0 degrees and is approximately -10 degrees to approximately 10 degrees, for example, approximately -5 degrees to approximately 5 degrees.

[0082] The specific embodiment of Figure 4B enables the use of a shared gas distribution disc (e.g., gas distribution disc 108) and a shared exhaust (e.g., a common exhaust duct 171). Using a shared gas distribution disc and a shared exhaust reduces system cost while still achieving high precision in heating and processing gas flow within the first processing space 124 and the second processing space 126. The shared gas distribution disc 108 may be particularly advantageous in the specific embodiment of Figure 4B because the first and second gas injection channels 182a, 182b are relatively close together.

[0083] Figure 4C shows a cross-sectional plan view of the chamber body 130 of Figure 2 according to the third embodiment described herein. In the third embodiment described herein and in Figure 4C, the chamber body 130 of Figure 2 is replaced by the chamber body 430c of Figure 4C. In the chamber body 430c, the first and second gas injection channels 182a, 182b, the first and second purified gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned at an acute angle α relative to a reference plane 107 (e.g., the longitudinal axis of the chamber body 430). The cross-sectional view of the chamber body 430c shows the relationship between the opening 136, the first and second gas injection channels 182a, 182b, and the first and second exhaust ports 172a, 172b. The chamber body 430c of Figure 4C also includes an equalization port 140.

[0084] In the exemplary embodiment shown in Figure 4C, all first gas injection channels 182a, first purified gas inlets 184a, and first exhaust ports 172a are arranged parallel to each other along a third flow path plane 410c and aligned with each other. Second gas injection channels 182b, second purified gas inlets 184b, and second exhaust ports 172b are also arranged parallel to each other along another third flow path plane 410c and aligned with each other. Openings 136 in both the first and second main body portions 415a and 415b are at an angle to all first and second gas injection channels 182a, 182b, first and second purified gas inlets 184a, 184b, and first and second exhaust ports 172a, 172b. The opening 136 of the first main body portion 415a is adjacent to and partially below the first gas injection channels 182a and the first exhaust ports 172a. The opening 136 is only partially located below the first gas injection channels 182a and the first purified gas inlets 184a. The opening 136 of the second main body portion 415b is adjacent to and partially located below the second gas injection channel 182b and the second exhaust port 172b. The opening 136 is only partially located below the second gas injection channel 182b and the second purified gas inlet 184b.

[0085] A balancing port 140 is disposed between the first main body portion 415a and the second main body portion 415b. In the specific embodiment described in FIG4C, the balancing port 140 connects the first processing space 124 and the second processing space 126 to each other.

[0086] The gas injection chord length 404 and exhaust port chord length 406 in Figure 4C are defined in the same manner as those in Figures 4A and 4B. The process gas flow path 408 in Figure 4C is also defined in the same manner as that in Figures 4A and 4B. In the specific embodiment disclosed in Figure 4C, the process gas flow path 408 travels at an angle relative to the center plane 103 and reference plane 107 of the chamber body 430c and moves toward the outer edge of the chamber body 430c. Process gas flowing from the first gas injection channel 182a flows to the first exhaust port 172a, and process gas flowing from the second gas injection channel 182b flows to the second exhaust port 172b.

[0087] As shown in Figures 4A and 4B, the first and second gas injection channels 182a and 182b, and the first and second exhaust ports 172a and 172b, are each bisected by a third flow path plane 410c. The third flow path plane 410c extends through the first body portion 415a and the second body portion 415b. Each flow path plane in the third flow path plane 410c is parallel to the flow of processed gas from one of the first or second gas injection channels 182a and 182b to one of the first or second exhaust ports 172a and 172b. In the exemplary embodiment of Figure 4C, each third flow path plane 410c forms an acute angle α with the reference plane 107 when the angle α is oriented (e.g., directed) inward toward the central plane 103. Angle α is the angle inside the second flow path plane 410c and closer to the opening 136. In the specific embodiment described in Figure 4C and the accompanying text, angle α is approximately 45 degrees. In some exemplary embodiments, the angle α is approximately 10 degrees to approximately 80 degrees, such as approximately 20 degrees to approximately 70 degrees, such as approximately 30 degrees to approximately 60 degrees, such as approximately 35 degrees to approximately 55 degrees, such as approximately 40 degrees to approximately 50 degrees.

[0088] In the specific embodiment depicted in Figure 4C, a shared gas distribution disc, such as gas distribution disc 108, can more easily be used to supply process gas to the first processing chamber 101a and the second processing chamber 101b. The first and second gas injection channels 182a, 182b are close to each other, thus allowing process gas to be transferred from the gas distribution disc 108 to the first and second gas injection channels 182a, 182b using shorter gas conduits. The shorter gas conduits save costs, and without variable conduit lengths and back pressure, pressure can be distributed more evenly between the first and second processing chambers 101a, 101b (allowing for improved airflow uniformity). The exhaust system of the specific embodiment in Figure 4C may include a separate exhaust system for each of the first and second processing chambers 101a and 101b. In some specific embodiments, a shared exhaust system, such as a common exhaust conduit 171, may also be used. The shared gas distribution disc and independent exhaust systems reduce the difficulty of servicing the lamp holder and other chamber components.

[0089] Figure 4D shows a cross-sectional plan view of the chamber body 130 of Figure 2 according to the fourth embodiment described herein. In the fourth embodiment described herein and in Figure 4D, the chamber body 130 is replaced by a chamber body 430d. In the chamber body 430d, the first and second gas injection channels 182a, 182b, the first and second purified gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned at an obtuse angle α relative to a reference plane 107 (e.g., at an obtuse angle relative to the longitudinal axis of the chamber body 430). The cross-sectional view of the chamber body 430d shows the relationship between the opening 136, the first and second gas injection channels 182a, 182b, and the first and second exhaust ports 172a, 172b. The chamber body 430d of Figure 4A also includes an equalization port 140.

[0090] In the exemplary embodiment shown in Figure 4D, all first gas injection channels 182a, first purified gas inlets 184a, and first exhaust ports 172a are arranged parallel to each other along a fourth flow path plane 410d and aligned with each other. Second gas injection channels 182b, second purified gas inlets 184b, and second exhaust ports 172b are also arranged parallel to each other along another fourth flow path plane 410d and aligned with each other. Openings 136 in both the first main body portion 415a and the second main body portion 415b are at an angle to all first and second gas injection channels 182a, 182b, first and second purified gas inlets 184a, 184b, and first and second exhaust ports 172a, 172b. Opening 136 of the first processing chamber 101a is adjacent to and partially located below the first gas injection channels 182a and the first exhaust ports 172a. Opening 136 is only partially located below the first gas injection channels 182a and the first purified gas inlets 184a. The opening 136 of the second processing chamber 101b is adjacent to and partially located below the second gas injection channel 182b and the second exhaust port 172b. The opening 136 is only partially located below the second gas injection channel 182b and the second purified gas inlet 184b.

[0091] A balancing port 140 is disposed between the first main body portion 415a and the second main body portion 415b. In the specific embodiment described in FIG4D, the balancing port 140 connects the first processing space 124 and the second processing space 126 to each other.

[0092] The gas injection chord length 404 and exhaust port chord length 406 in Figure 4D are defined in the same manner as those in Figures 4A to 4C. The process gas flow path 408 in Figure 4D is also defined in the same manner as that in Figures 4A to 4C. In the specific embodiment disclosed in Figure 4D, the process gas flow path 408 travels at an angle relative to the central plane 103 and reference plane 107 of the chamber body 430d and moves toward the central wall 132 of the chamber body 430d. Process gas flowing from the first gas injection channel 182a flows to the first exhaust port 172a, and process gas flowing from the second gas injection channel 182b flows to the second exhaust port 172b.

[0093] As shown in Figures 4A to 4C, the first and second gas injection channels 182a, 182b and the first and second exhaust ports 172a, 172b are each bisected by a fourth flow path plane 410d. A fourth flow path plane 410d extends through each of the first and second body portions 415a and 415b. The fourth flow path plane 410d is parallel to the flow of processed gas from the first and second gas injection channels 182a, 182b to the first and second exhaust ports 172a, 172b. In the exemplary embodiment of Figure 4D, the fourth flow path plane 410d forms an obtuse angle α with the reference plane 107 when this angle is an inward angle toward the central plane 103. Angle α is the angle inside the second flow path plane 410b and closer to the opening 136. In the embodiment described in Figure 4C, angle α is approximately 135 degrees. In some exemplary embodiments, the angle α is approximately 100 degrees to approximately 170 degrees, such as approximately 110 degrees to approximately 160 degrees, such as approximately 120 degrees to approximately 150 degrees, such as approximately 125 degrees to approximately 145 degrees, such as approximately 130 degrees to approximately 140 degrees.

[0094] In the specific embodiment depicted in Figure 4D, the common exhaust duct 171 can be more easily used to remove process gases from the first processing chamber 101a and the second processing chamber 101b. The first exhaust port 172a and the second exhaust port 172b are close to each other, thus utilizing shorter gas conduits to transfer exhaust gases from the first processing chamber 124 and the second processing chamber 126 to the vacuum pump 110. In a specific embodiment where the chamber body 430d is a monolithic body, the first exhaust port 172a and the second exhaust port 172b can be combined into a single exhaust port. The shorter gas conduit and single exhaust device reduce chamber costs. The use of a single vacuum pump 110 further reduces equipment costs. The use of the common exhaust duct 171 simplifies exhaust maintenance, which reduces the total downtime of the processing chamber when cleaning the exhaust system.

[0095] Figure 5 illustrates the operation of a method 500 for processing a substrate according to a specific embodiment described herein. Method 500 utilizes the apparatus described in Figures 1 through 4. Method 500 utilizes one or a combination of a shared gas distribution disc and a common exhaust chamber.

[0096] In operation 502 of method 500, a process gas is allowed to flow from a shared gas distribution disk (e.g., gas distribution disk 108). The process gas can be any suitable process gas used in the epitaxial deposition process. The process gas can include Group V precursor gases or Group III precursor gases. In some specific embodiments, a mixture of different process gases can be used in operation 502. In some specific embodiments, the process gas can include, for example, silicon-containing precursors, such as silanes, halosilanes, or combinations thereof. Silanes can include silanes (SiH4) and higher-order silanes having the empirical formula Six H(2x+2), such as ethoxysilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10). The halosilane may include monochlorosilane (MCS), dichlorosilane (DCS), trichlorosilane (TCS), hexachloroethanesilane (HCDS), octachlorotrisilane (OCTS), silicon tetrachloride (STC), or combinations thereof. The process gas may alternatively include a germanium-containing precursor. The process gas may further include a precursor gas. Depending on the desired conductivity of the deposited epitaxial layer, the precursor gas may include, for example, phosphorus, boron, arsenic, gallium, or aluminum. The process gas may further include an etchant gas. The etchant gas may include, for example, any gas containing halogen molecules, such as hydrogen chloride (HCl), chlorine (Cl), or hydrogen fluoride (HF). The process gas may further include a carrier gas. The carrier gas may include, for example, nitrogen (N2), argon (Ar), helium (He), or hydrogen (H2).

[0097] At operation 504 of method 500, for example, a multi-channel flow controller is used to divide the process gas flowing out of gas distribution plate 108. The process gas then flows through first and second gas injection channels 182a, 182b to enter first and second processing spaces 124, 126. The separated process gases flow through the first and second gas injection channels 182a, 182b at the same rate. Other device elements (not shown), such as flow controllers, valves, and pumps, may be present along the process gas flow path. Additional device elements may be disposed between gas distribution plate 108 and the first and second gas injection channels 182a, 182b. Additional flow control elements can ensure equal distribution of the process gas flow between the first processing space 124 and the second processing space 126.

[0098] In operation 506 of method 500, a process gas is flowed through two or more substrates, such as substrate 155. The two or more substrates in operation 506 can be two substrates. After operation 504, the process gas can be delivered to each substrate from the first and second gas injection channels 182a, 182b. The flow of the process gas on the substrates enables epitaxial deposition processing.

[0099] In operation 508 of method 500, the processed gas is discharged as exhaust gas via a common exhaust chamber. The common exhaust chamber may be the common exhaust duct 171 discussed herein. Before entering the common exhaust duct 171, the processed gas is drawn from the first processing chamber 124 and the second processing chamber 126 via the first exhaust port 172a and the second exhaust port 172b. After the exhaust gas enters the common exhaust duct 171, the exhaust gas is removed by the exhaust pump 128 via the vacuum pump 110.

[0100] Figure 6 shows a top view of a single upper window assembly 600 disposed above the chamber body 130 of the first processing chamber 101a and the second processing chamber 101b of Figures 1 to 3. The single upper window assembly 600 includes a single upper window 616 and the chamber body 130. The single upper window 616 includes two inner windows 612a and 612b. The two inner windows 612a and 612b are a first inner window 612a disposed above the first processing space 124, as shown in Figure 1, and a second inner window 612b disposed above the second processing space 126, as shown in Figure 1. An outer window support 614 is arranged around the first inner window 612a and the second inner window 612b, and supports the single upper window assembly 600 along a support groove similar to the support groove 304.

[0101] In a specific embodiment utilizing a single upper window assembly 600, a portion of the single upper window 616 is disposed in the middle of the central wall 132. The support recess 304 of the single upper window 616 is shaped similarly to two overlapping ellipses or circles, such that the outer contour of the single upper window 616 resembles the outline of an infinity symbol, the number 8, or a lemniscate. The upper window assembly 600 can be used with the specific embodiments shown in Figures 1 to 3 and Figures 4A to 4D.

[0102] Although only two processing chambers with a shared gas distribution disc and exhaust system are described herein, the specific embodiments disclosed herein can be scaled up to include additional processing chambers. In some specific embodiments, four processing chambers may exist, arranged adjacent to each other and having a shared chamber body, such as chamber body 130.

[0103] Although the foregoing content pertains to specific embodiments of the present disclosure, other and further specific embodiments may be conceived without departing from the scope of the foregoing content, and the scope of the foregoing content is determined by the following claims.

[0104] 100: System 103: Central Plane 105: Bottom area 107: Reference Plane 108: Gas Distribution Panel 110: Vacuum pump 115: First separate gas distribution plate 116: Upper Window 117: Second separate gas distribution plate 118: Lower Window 120: Padding 123: Catheter 124: First Processing Space 125:Substrate 126: Second Processing Space 128: Exhaust outlet pipe 130: Main body of the chamber 132: Central wall 134: Bottom 136: Opening 140: Balancer Port 142: Exports 143: Valve 144: Catheter 145: Valve 146: Catheter 148: Gas Source 150: Base assembly 152: Base assembly 154: Surface 155:Substrate 156: pole 158: Bellows Assembly 160: Base bellows port 162: Airflow Channel 164: Motor 168: Gas Source 170: Exhaust Chamber 171: Exhaust duct 172: Exhaust port 173: Exhaust valve 174: Pump conduit 176: Catheter 177: Valve 178: Exhaust pipe 179: Valve 180: Base components 185: Purified Gas Source 201: Temperature Sensor 202: High-energy radiation source component 205: Flow Path 210: Flow path 212: Interior Window 214: Window support 225: Sidewall 230: Outer surface 235: First Cavity 240: Second chamber 245: Outer surface 302: First chamber wall 303: Second chamber wall 304: Support groove 306: Top surface 308: Interface Surface 310: Entrance Section 312: Gas Channel 318: Lower ring assembly 320: Upper ring assembly 322: First side 324: Second side 326: Part One 328: Part Two 381: Minimum distance 404: Gas Injection Chord 406: Exhaust port chord length 408: Handling Gas Flow Path 430: Main body of the chamber 500: Methods 502: Operation 504: Operation 506: Operation 508: Operation 600: Top Window Component 614: Window Support 616: Upper Window 101a: First Processing Room 101b: Second Processing Room 104a: First cover 104b: Second cover 106a: First upper radiative heat source 106b: Second upper radiative heat source 116a: First upper window 116b: Second upper window 118a: First lower window 118b: Second lower window 119a: First Purification Current Limiter 119b: Second Purification Flow Limiter 121a: Current limiter 121b: Current limiter 127a: Catheter 127b: Catheter 129a: Catheter 129b: catheter 138a: First lower radiative heat source 138b: Second lower radiative heat source 140a: First opening 140b: Second opening 172a: First exhaust port 172b: Second exhaust port 182a: First Injection Channel 182b: Second Injection Channel 184a: First purified gas inlet 184b: Second Purified Gas Inlet 410a: First flow path plane 410b: Second flow path plane 410c: Third flow path plane 410d: Fourth flow path plane 415a: First main body 415b: Second Main Body 430a: Chamber body 430b: Main chamber 430c: Chamber body 430d: Main body of the chamber 612a: Inner Window 612b: Inner Window

[0105] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. An apparatus for substrate processing, comprising: a dual-chamber body, wherein the dual-chamber body includes: A first processing space on a first side of a central plane; a second processing space on a second side of the central plane; an equalization port connecting the first processing space and the second processing space; a first plurality of gas injection channels formed through an outer surface of a first outer wall of the dual-chamber body and in fluid communication with the first processing space; a second plurality of gas injection channels formed through an outer surface of a second outer wall of the dual-chamber body and in fluid communication with the second processing space; a first exhaust port formed through an outer surface of a third outer wall of the dual-chamber body, the third outer wall being opposite to and spanning the first processing space, the first exhaust port being in fluid communication with the first processing space, wherein a first flow path plane is defined between the first plurality of gas injection channels and the first exhaust port; A second exhaust port is formed through an outer surface of a fourth outer sidewall of the dual-chamber body, the fourth outer sidewall being opposite to and spanning the second processing space, the second exhaust port being in fluid communication with the second processing space, wherein a second flow path plane is defined between the second plurality of gas injection channels and the second exhaust port, and wherein both the first flow path plane and the second flow path plane form an angle of 80 to 100 degrees with respect to a longitudinal axis extending through both the first and second processing spaces; one or more upper window assemblies are arranged on the dual-chamber body; a first lower window is positioned adjacent to the first processing space; a second lower window is positioned adjacent to the second processing space; a first substrate support is positioned in the first processing space; and a second substrate support is positioned in the second processing space. A first lower light assembly positioned adjacent to the first lower window; and a second lower light assembly positioned adjacent to the second lower window.

2. The device as claimed in claim 1, wherein the first plurality of gas injection channels and the first exhaust port are centered along the first flow path plane, and the second plurality of gas injection channels and the second exhaust port are centered along the second flow path plane.

3. The apparatus as claimed in claim 1, further comprising a shared gas distribution disk fluidly coupled to the first processing space and the second processing space.

4. The device as claimed in claim 1, the device further comprising a shared exhaust device fluidly coupled to the first processing space and the second processing space.

5. The device as claimed in claim 1, wherein the first plurality of gas injection channels comprises five or more gas injection channels parallel to each other, and the second plurality of gas injection channels comprises five or more gas injection channels parallel to each other.

6. The apparatus as claimed in claim 1, wherein the first plurality of gas injection channels and the second plurality of gas injection channels are spaced apart along an inner wall of a first processing chamber and a second processing chamber, respectively.

7. An apparatus for substrate processing, comprising: a dual-chamber body, wherein the dual-chamber body includes: A first processing space, the first processing space being formed by a first cavity on a first side of a reference plane; A second processing space formed by a second cavity on a second side of the reference plane; an equalization port connecting the first processing space and the second processing space; a first plurality of gas injection channels formed through an outer surface of a first outer wall of the dual-chamber body and in fluid communication with the first processing space; a second plurality of gas injection channels formed through an outer surface of a second outer wall of the dual-chamber body and in fluid communication with the second processing space; a first exhaust port formed through an outer surface of a third outer wall of the dual-chamber body, the third outer wall being opposite to and spanning the first processing space, the first exhaust port being in fluid communication with the first processing space, wherein a first flow path plane is defined between the first plurality of gas injection channels and the first exhaust port; A second exhaust port is formed through an outer surface of a fourth outer sidewall of the dual-chamber body, the fourth outer sidewall being opposite to and spanning the second processing space, the second exhaust port being in fluid communication with the second processing space, wherein a second flow path plane is defined between the second plurality of gas injection channels and the second exhaust port, and wherein both the first flow path plane and the second flow path plane form an angle of 80 to 100 degrees with respect to a longitudinal axis extending through both the first and second processing spaces; one or more upper window assemblies are arranged on the dual-chamber body; a first lower window is positioned adjacent to the first processing space; a second lower window is positioned adjacent to the second processing space; a first substrate support is positioned in the first processing space; and a second substrate support is positioned in the second processing space. A first lower light assembly positioned adjacent to the first lower window; and a second lower light assembly positioned adjacent to the second lower window.

8. The device as described in claim 7, further comprising a shared gas distribution disc.

9. The device as described in claim 7, further comprising a shared exhaust system.

10. The device as claimed in claim 7, wherein the dual-chamber body further includes an upper recess formed as an outer diameter surrounding each of the first and second processing spaces.

11. The device as claimed in claim 10, wherein the one or more upper window components include two upper window components, and each of the two upper window components further includes: One interior window; and exterior window supports, wherein the exterior window supports are at least partially arranged within the upper recess.

12. The device as described in claim 7, wherein the one or more upper window components include a single upper window.

13. The device as claimed in claim 7, wherein the one or more upper window assemblies are arranged between the dual-chamber body and a cover assembly.

14. The apparatus as claimed in claim 7, wherein each of the first processing space and the second processing space has a liner formed therein.

15. A dual-chamber body for substrate processing, comprising: One main chamber; A first processing space is formed on a first side of a reference plane, passing through the chamber body; a second processing space is formed on a second side of the reference plane, passing through the chamber body; a first plurality of gas injection channels are formed through an outer surface of a first outer wall of the dual-chamber body and are in fluid communication with the first processing space; a second plurality of gas injection channels are formed through an outer surface of a second outer wall of the dual-chamber body and are in fluid communication with the second processing space; a first exhaust port is formed through an outer surface of a third outer wall of the dual-chamber body, the third outer wall being opposite to and spanning the first processing space, the first exhaust port being in fluid communication with the first processing space, wherein a first flow path plane is defined between the first plurality of gas injection channels and the first exhaust port; A second exhaust port is formed through an outer surface of a fourth outer wall of the dual-chamber body, the fourth outer wall being opposite to and spanning the second processing space, the second exhaust port being in fluid communication with the second processing space, wherein a second flow path plane is defined between the second plurality of gas injection channels and the second exhaust port, and wherein both the first flow path plane and the second flow path plane form an angle of 80 to 100 degrees with respect to a longitudinal axis extending through both the first processing space and the second processing space; and an equalization port connecting the first processing space and the second processing space.

16. The dual-chamber body as claimed in claim 15, wherein the first plurality of gas injection channels comprises five or more gas injection channels parallel to each other, and the second plurality of gas injection channels comprises five or more gas injection channels parallel to each other.

Images