Method for confirming the segmentation of crystal-attached thin films

Abstract

[The technical problem to be solved] A method for confirming DAF (Die Attach Film) segmentation is provided, which can easily confirm whether the DAF disposed on the back side of the wafer has been properly segmented for each wafer. Technical means to solve the problem A method for confirming DAF dicing, for confirming whether the DAF disposed on the back side of a wafer has been properly diced per wafer, the aforementioned DAF dicing confirmation method comprises at least the following steps: a dicing step, on the back side (10b) of a wafer (10) that has been diced into a plurality of wafers (12') along a predetermined dicing line (14) or a wafer 10 having a dicing start point (110) formed along the predetermined dicing line (14), a DAF (18) is disposed on one side (18a), and the wafer (10) is positioned in the opening (Fa) of an annular frame (F) having an opening (Fa) for accommodating the wafer (10), and a dicing tape (T2) is attached to the other side (18b) of the DAF (18), and the dicing tape (T2) is used to dicing the wafer (10). The process involves supporting the DAF (18) and the wafer (10) on the frame (F); the DAF dicing step, which involves expanding the dicing tape (T2) between the wafer (10) and the frame (F) to increase the spacing between adjacent wafers (12'), and dicing the DAF (18) to the wafers (12'); the shrinking step, which involves heating the dicing tape (T2) between the wafer (10) and the frame (F) to relax and shrink the tape; the dicing tape peeling step, which involves placing support members (T3, T4) on the front side (10a) of the wafer (10) and peeling the dicing tape (T2) from the DAF (18); and the DAF dicing confirmation step, which involves confirming whether the DAF (18) has been diced to each wafer (12').

Description

Technical Field

[0001] The present invention relates to a method for confirming DAF segmentation, wherein the aforementioned method confirms whether the DAF disposed on the back side of the wafer has been properly segmented for each wafer. Prior Technology

[0002] A wafer, which divides multiple devices such as ICs and LSIs into predetermined sections and forms them on the front side, is then ground on the back side to form the desired thickness using a grinding machine. After that, it is divided into individual device chips using a dicing machine and a laser processing machine, and then used in electrical machines such as mobile phones and personal computers.

[0003] Furthermore, the following technical solution has been proposed: forming a half-cut groove from the front side of the wafer along a predetermined dicing line that does not reach the back side, and then applying a protective adhesive tape to the front side of the wafer to grind the back side of the wafer, so that the bottom of the half-cut groove is exposed on the back side, thereby dividing the wafer into individual device chips (see, for example, Patent Document 1).

[0004] In addition, the following technical solutions have been proposed: a laser beam of wavelength that is penetrable to the wafer is positioned at the focal point inside the predetermined dicing line from the front or back of the wafer for irradiation, and a modified layer is formed inside the wafer along the predetermined dicing line. Then, a protective tape is attached to the front of the wafer, and the wafer is shaped to the desired thickness by grinding the back of the wafer. The wafer is then diced into individual device chips by the external force applied during the grinding process (see, for example, Patent Document 2). Previous technical documents Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2004-193241 Patent Document 2: Japanese Patent Application Publication No. 2014-007333

[0006] On the back side of the device wafers divided into individual wafers using the technology described in Patent Documents 1 and 2, a DAF (Die Attach Film) is disposed. The aforementioned DAF is used when assembling or depositing the device wafers onto a substrate. When the DAF is disposed on the device wafer, it is divided into individual device wafers by the following method: the DAF is disposed on the entire back side of the wafer, and a dicing tape is overlapped on the DAF. The outer periphery of the dicing tape is supported by an annular frame having an opening for accommodating the wafer, and the dicing tape is expanded. Summary of the Invention

[0007] The problem the invention aims to solve

[0008] However, during the DAF dicing process, which divides the DAF into individual device wafers, the DAF may not be properly diced due to factors such as the expansion speed and amount of the dicing tape, or the size of the device wafer. Therefore, conventionally, after the DAF dicing process, the dicing status of the DAF is checked using a microscope from the dicing groove side formed on the front side of the wafer along the predetermined dicing lines. Dividing conditions, such as the expansion speed and amount of the dicing tape, are adjusted as needed. However, checking the dicing status of the DAF already disposed on the back side of the wafer from the dicing groove side formed on the front side of the wafer is not easy and time-consuming, resulting in poor productivity.

[0009] The present invention is made in view of the above facts, and its main technical problem is to provide a DAF segmentation confirmation method, which can easily confirm whether the DAF disposed on the back side of the wafer has been properly segmented for each wafer. The means to solve the problem

[0010] To address the aforementioned major technical challenges, according to the present invention, a DAF segmentation verification method can be provided. This method verifies whether the DAF disposed on the back side of the wafer has been appropriately segmented for each wafer. The aforementioned DAF segmentation verification method comprises at least the following steps: In the support step, a DAF (Digital Anchor Filter) is disposed on the back side of a wafer that has been divided into multiple wafers along a predetermined dicing line, or a wafer with a dicing start point formed along a predetermined dicing line. The wafer is positioned in the opening of an annular frame having an opening for accommodating the wafer. Cutting tape is attached to the other side of the DAF, and the DAF and the wafer are supported in the frame by the cutting tape. In the DAF dicing step, the dicing tape between the wafer and the frame is expanded to increase the spacing between adjacent wafers, and the DAF is then used to dice the wafers accordingly. The shrinking step involves heating the dicing tape positioned between the wafer and the frame to loosen and shrink it. The tape peeling step involves placing a support member on the front side of the wafer and peeling the tape off from the DAF; and The DAF segmentation confirmation step confirms whether the DAF has been segmented according to each wafer.

[0011] Preferably, in the DAF segmentation confirmation step, if the DAF does not correspond to the segmentation of each wafer, the expansion speed and expansion amount when expanding the cutting tape will be adjusted in the DAF segmentation step. Invention Effects

[0012] The DAF dicing confirmation method of the present invention comprises at least the following steps: a support step, wherein a DAF is disposed on the back side of a wafer that has been diced into a plurality of wafers along a predetermined dicing line, or a wafer with a dicing start point formed along a predetermined dicing line, and the wafer is positioned on the opening of an annular frame having an opening for accommodating the wafer, and dicing tape is attached to the other side of the DAF, thereby supporting the DAF and the wafer on the frame through the dicing tape; a DAF dicing step, wherein the dicing tape between the wafer and the frame is expanded to increase the spacing between adjacent wafers, and the DAF is aligned with the wafer. The process involves: a wafer dicing step, where the dicing tape between the wafer and the frame is heated to relax and dangle; a dicing tape peeling step, where a support member is placed on the front side of the wafer and the dicing tape is peeled off from the DAF; and a DAF dicing confirmation step, which confirms whether the DAF has been diced to each wafer. Since the wafer and DAF can be supported by the support member and the DAF side is facing the upper surface, it is easy and reliable to confirm whether the DAF has been properly diced to the wafer from the side where the DAF is placed. This also makes it possible to appropriately adjust the dicing components in the DAF dicing step. Simple Explanation of the Diagram

[0013] Figure 1 is a perspective view showing the formation of cutting grooves or dicing start points on a wafer that can be processed in this embodiment. Figure 2 is a perspective view showing a wafer with cutting grooves or cleavage starting points placed on the work chuck of a grinding apparatus. Figure 3(a) is a perspective view showing the state of a wafer being divided into individual wafers by a grinding device, and (b) is a perspective view of a wafer that has been divided into individual wafers. Figure 4 is a perspective view showing the implementation of the support steps. Figure 5 is a three-dimensional view of the dividing device. Figure 6 is a partially enlarged cross-sectional view showing the implementation of the DAF segmentation step performed by the segmentation device shown in Figure 5. Figure 7 is a perspective view showing the implementation of the wrinkling step. Figure 8 is a perspective view showing the implementation of the DAF segmentation confirmation step. Figure 9(a) is a perspective view showing another embodiment of the tape peeling step, and (b) is a perspective view showing another embodiment of the DAF segmentation confirmation step. Implementation

[0014] Forms used to implement inventions

[0015] Hereinafter, an embodiment of the DAF segmentation confirmation method according to the present invention will be described in detail with reference to the accompanying drawings.

[0016] When implementing the DAF dicing verification method of this embodiment, a wafer that has been diced into a plurality of wafers along a predetermined dicing line or a wafer with a dicing start point formed along the predetermined dicing line is prepared. First, the process of preparing a wafer that has been diced into a plurality of wafers along the predetermined dicing line will be described with reference to Figures 1 to 3. The upper part of Figure 1 shows the workpiece of this embodiment, namely the wafer 10 before processing. This wafer 10 has a configuration in which a plurality of devices 12 are formed on the front side 10a divided by the predetermined dicing line 14.

[0017] To cleave the pre-processed wafer 10 into individual device wafers along the predetermined cleaving line 14, for example, as shown on the left side of FIG1, the pre-processed wafer 10 is transported to a cutting apparatus 20 (only a portion is shown) equipped with a cutting blade 22. The cutting apparatus 20 includes a holding assembly for holding the wafer 10, a moving assembly for moving the holding assembly, and an imaging assembly for photographing the wafer 10 held by the holding assembly (all omitted from the illustration). The cutting blade 22 is driven to rotate by a motor (omitted from the illustration). The wafer 10 is held in the holding assembly, and the moving assembly is actuated to position the holding assembly directly below the imaging assembly. Calibration is performed by photographing the wafer 10 using the imaging assembly. Based on the position information of the predetermined cleaving line 14 detected by the calibration, the predetermined cleaving line 14 is aligned with the X direction in the figure. Next, the cutting blade 22 is positioned along a predetermined dicing line 14 on the front side 10a of the wafer 10, and the holding assembly and the cutting blade 22 are moved relative to each other in the X direction by the moving assembly to perform machining feed, thereby forming a cutting groove 100 along the dicing line 14. As shown, the cutting groove 100 is a half-cut groove that does not reach the depth of the back side 10b of the wafer 10. The depth of the cutting groove 100 is set such that, in the wafer dicing step described later, when the back side 10b has been ground to the finished thickness, the cutting groove 100 will be exposed from the back side 10b. By actuating the cutting blade 22 and the moving assembly, the holding assembly holding the wafer 10 and the cutting blade 22 are appropriately and relative to each other in the X direction, the Y direction orthogonal to the X direction, and the rotational direction, and as shown in the lower left of FIG1, the cutting groove 100 is formed along all the dicing lines 14 on the wafer 10.

[0018] Next, as shown on the left side of Figure 2, BG (back grinding) tape T1 is attached to the front side 10a of wafer 10 to form a single unit. Once wafer 10 and BG tape T1 are formed as a single unit, they can be transferred to the grinding apparatus 30 shown at the bottom of Figure 2, with the BG tape T1 side facing downwards and the back side 10b side of wafer 10 facing upwards, and placed on the work chuck 31, which is composed of a holding surface 32 and a frame 34 surrounding the holding surface 32. The holding surface 32 of the work chuck 31 is constructed by a ventilated component and connected to a suction component (not shown), which attracts and holds the wafer 10 placed on the work chuck 31.

[0019] As shown in Figure 3(a), the grinding apparatus 30 includes a grinding assembly 36. The grinding assembly 36 is an assembly used to grind and thin the back side 10b of the wafer 10 held on the work chuck 31, and includes a rotary spindle 362 that is rotated by a rotary drive mechanism (not shown), a wheel seat 364 mounted on the lower end of the rotary spindle 362, a grinding wheel 366 mounted on the lower surface of the wheel seat 364, and a plurality of grinding stones 368 arranged in a ring on the lower surface of the grinding wheel 366.

[0020] If the wafer 10 is held in the work chuck 31, the spindle 362 of the grinding assembly 36 can be rotated at, for example, 6000 rpm in the direction indicated by arrow R1 in Figure 3(a), and the work chuck 31 can be rotated at, for example, 300 rpm in the direction indicated by arrow R2. Then, by means of the grinding water supply assembly (not shown), grinding water is supplied to the back surface 10b of the wafer 10, and the grinding feed assembly (not shown) is activated to lower the grinding assembly 36 in the direction indicated by arrow R3 in the figure, so that the grinding stone 368 contacts the back surface 10b of the wafer 10, and the grinding wheel 366 is fed at, for example, a speed of 1 μm / s. At this time, the thickness of the wafer 10 can be measured by a contact measuring instrument (not shown) while grinding, until the thickness of the wafer 10 becomes the finished thickness, and the back surface 10b side is ground by a predetermined amount. As described above, since a cutting groove 100 with a depth equivalent to the finished product thickness has been formed along the predetermined dicing line 14 on the front side 10a of the wafer 10, this predetermined amount can be ground off the back side 10b, as shown in FIG3(b), so that the cutting groove 100 is exposed on the back side 10b of the wafer 10, and the wafer 10 is diced into individual device wafers 12' (wafer dicing step). After the wafer 10 has been diced into individual device wafers 12', the grinding assembly 36 is stopped and moved upward.

[0021] Furthermore, the present invention is not limited to the method described above, in which a cutting groove 100 is formed on the front side 10a of the wafer 10 and the back side 10b is ground to divide the wafer 10 into individual device wafers 12'. Alternatively, it can be configured to, for example, perform a dicing start point formation step by forming a dicing start point along the predetermined dicing line 14 of the wafer 10 using laser processing, and perform the wafer dicing step by applying external force to the dicing start point. Hereinafter, with reference to FIG1-3, an implementation of the dicing start point formation step and the wafer dicing step will be described.

[0022] After the wafer 10 shown at the top of Figure 1 is prepared, it is transferred to the laser processing apparatus 40 shown on the right side of Figure 1. The laser processing apparatus 40 includes a holding assembly for holding the wafer 10, a moving assembly for moving the holding assembly in the X direction, Y direction and rotation direction in the figure, an imaging assembly for taking pictures of the wafer 10 (all omitted from the figure), and a laser beam irradiation assembly 41 for irradiating laser beams LB with a wavelength that is penetrable to the wafer 10.

[0023] The wafer 10, which has been transferred to the laser processing unit 40, is held in the holding assembly with its back side 10b facing upwards. Furthermore, although not shown in the diagram, when holding the wafer 10 in the holding assembly, protective tape should be applied to the front side 10a of the wafer 10 to protect the device 12. The wafer 10, held in the holding assembly, can be positioned directly below the imaging assembly to perform a calibration step. The imaging assembly illuminates infrared light and captures the reflected infrared light, converting it into an electrical signal and outputting it to a control assembly (not shown). By performing this calibration step, the position of the predetermined dicing line 14 formed on the front side 10a can be detected from the back side 10b of the wafer 10, and the wafer 10 can be rotated by the moving assembly to align the predetermined dicing line 14 in the X direction.

[0024] Next, the moving component is activated to position the processing start position of the predetermined dicing line 14 directly below the concentrator 42 of the laser beam irradiation component 41, and to position the focusing point of the laser beam LB inside the predetermined dicing line 14 of the wafer 10 for irradiation, while the wafer 10 is fed in the X direction for processing. Thus, as shown in FIG1, a dicing start point 110 composed of a modifier layer is formed inside the wafer 10 along the predetermined dicing line 14. Furthermore, in this embodiment, as shown, the laser beam LB is irradiated by changing the depth of the focusing point in three stages along the predetermined dicing line 14, thereby forming a dicing start point 110 composed of three modifier layers. Thus, after the dicing start point 110 has been formed along the predetermined dicing line 14, the wafer 10 can be indexed in the Y direction at intervals corresponding to the predetermined dicing line 14, and the adjacent unprocessed predetermined dicing lines 14 in the Y direction are positioned directly below the concentrator 42. Then, in the same manner as described above, the focal point of the laser beam LB is positioned inside the dicing predetermined line 14 of the wafer 10 for irradiation, and the wafer 10 is fed in the X direction to form the dicing start point 110. Thus, the wafer 10 is fed in both the X and Y directions, forming the dicing start point 110 along all the dicing predetermined lines 14 along the X direction. Next, the wafer 10 and the worktable 31 are rotated 90 degrees together, aligning the unprocessed dicing predetermined lines 14, which are orthogonal to the dicing predetermined lines 14 where the dicing start points 110 have been formed, with the X direction aligned. Then, the focal point of the laser beam LB is positioned and irradiated along the remaining dicing predetermined lines 14 in the same manner as described above, and as shown in the lower right of FIG1, the dicing start point 110 is formed along all the dicing predetermined lines 14 of the wafer 10 (dicing start point formation step). Furthermore, when forming the modified layer along the predetermined dicing line 14 of the wafer 10, it is not necessarily limited to irradiating the laser beam LB from the back side 10b of the wafer 10. As long as there are no test electrodes or the like on the predetermined dicing line 14, it can also be set to irradiate from the front side 10a of the wafer 10.

[0025] As described above, once the dicing start points 110 are formed inside the wafer 10 along all the predetermined dicing lines 14, as shown on the right side of FIG2, BG tape T1 is attached to the front side 10a of the wafer 10 where the dicing start points 110 are formed, and the wafer is transported to the grinding apparatus 30, with the BG tape T1 side facing downwards and held in the work chuck 31 of the grinding apparatus 30. Then, using the same procedure as the wafer dicing step described above, the back side 10b of the wafer 10 is ground by the grinding assembly 36 shown in FIG3. The wafer 10 can be thinned to the desired finished thickness by grinding from the back side 10b of the wafer 10 using the grinding assembly 36. This allows external force to be applied to the dicing start points 110, breaking the wafer 10 along the dicing start points 110 to divide it into individual device wafers 12'. Furthermore, the present invention is not limited to forming a modified layer inside the predetermined dicing line 14 of the wafer 10 by laser processing as described above to form the dicing starting point 110. Alternatively, it can be configured to irradiate laser light with an absorptive wavelength from the front side 10a of the wafer 10 to perform ablation processing along the predetermined dicing line 14, thereby forming a laser processing groove that becomes the dicing starting point.

[0026] Next, as shown in Figure 4, a support step is performed to support the wafer 10 on the frame. During this support step, firstly, as shown in the lower part of Figure 4, a circular sheet-shaped DAF 18 of the same size as the wafer 10, a dicing tape T2, and an annular frame F with an opening Fa for accommodating the wafer 10 are prepared. The upper left of Figure 4 shows the wafer 10, which has been divided into individual device wafers 12' by the aforementioned wafer dicing step. The support step, DAF dicing step, shrinking step, and dicing tape peeling step, which will be described below, are configured to support the wafer 10, which has been divided into individual device wafers 12', on the frame F.

[0027] After preparing the wafer 10, which has been divided into individual device chips 12', one side 18a (the upper surface in the figure) of the DAF18 can be disposed on the back side 10b of the wafer 10. Position the back side 10b of the wafer 10 to the opening Fa of the frame F, and attach the dicing tape T2 to the other side 18b of the DAF18. The DAF18 and the wafer 10 are then supported on the frame F by the dicing tape T2, thus completing the support step. Furthermore, the BG tape T1 already attached to the front side 10a of the wafer 10 will be peeled off after this support step.

[0028] After the above-described support steps have been performed, the DAF dicing step can be performed. The DAF dicing step involves expanding the dicing tape T2, which is held between the wafer 10 and the frame F, to increase the spacing between adjacent device wafers 12', and dicing the DAF 18s corresponding to the device wafers 12'. A dicing apparatus 50 suitable for performing the DAF dicing step of this embodiment will be described with reference to FIG5. The dicing apparatus 50 includes a frame holding assembly 51 and a dicing assembly 52. ​​The frame holding assembly 51 holds the frame F that supports the wafer 10 through the dicing tape T2 and DAF 18. The dicing assembly 52 expands the dicing tape T2 attached to the frame F held by the frame holding assembly 51, and dices the DAF 18s disposed on the wafer 10 to each device wafer 12'.

[0029] The frame retaining assembly 51 includes a ring-shaped frame retaining member 51a for retaining the aforementioned annular frame F, and a plurality of clamps 51b (four in the illustrated embodiment) arranged at equal intervals around the outer periphery of the frame retaining member 51a as fixing components. The upper surface of the frame retaining member 51a is formed flat and can hold the frame F. Furthermore, the frame F, which has been placed on the upper surface of the frame retaining member 51a, can be fixed to the upper surface of the frame retaining member 51a by means of the clamps 51b.

[0030] An expanding cylinder 53, the lower end of which is fixed to a circular plate-shaped base 54, is disposed inside the frame holding member 51a. From a planar perspective, the expanding cylinder 53 is smaller in diameter than the inner diameter of the opening Fa of the frame F, and larger in diameter than the outer diameter of the wafer 10 supported on the cutting tape T2 via DAF18. The slitting assembly 52 in the illustrated embodiment includes cylinders 52a and piston rods 52b. A plurality of cylinders 52a (e.g., four) are arranged around the expanding cylinders 53 and fixed to the base 54. The piston rods 52b extend upward from the cylinders 52a and connect their upper ends to the lower surface of the frame holding member 51a. Air for control is supplied to the cylinders 52a through a connection path (omitted in the illustration), and the piston rods 52b move up and down in the vertical direction due to the action of the cylinders 52a, thereby causing the frame holding member 51a to move up and down in the vertical direction.

[0031] The segmentation device 50 of this embodiment has a configuration generally as described above. In addition to FIG. 5, the DAF segmentation steps of this embodiment will be explained in more detail with reference to FIG. 6.

[0032] During the DAF dicing step of this embodiment, as shown in FIG5, the front side 10a of the wafer 10, which has been diced into individual device wafers 12', is facing upwards, and the frame F is placed on the upper surface of the frame holding member 51a of the dicing apparatus 50 and fixed with a clamp 51b. At this time, as shown in FIG6, the upper end of the expansion cylinder 53 is positioned at a reference position (indicated by a solid line) that is approximately the same height as the upper surface of the frame holding member 51a. Next, the cylinders 52a of the plurality of dicing components 52 connected to the frame holding member 51a are actuated, causing the piston rod 52b to retract into the cylinder 52a, thereby causing the frame holding member 51a to descend in the direction indicated by arrow R4. In this way, the frame F descends together with the frame holding member 51a, and the cutting tape T2 supported by the frame F is expanded by a predetermined amount (represented by two-point chain lines) by the expanding cylinder 53, which rises relative to the frame holding member 51a, and a radial tensile force is applied to the cutting tape T2. Thus, as shown in FIG6, the spacing between adjacent device wafers 12' in wafer 10 can be expanded, and the DAF 18 can be divided corresponding to the device wafers 12', completing the DAF dicing step. Furthermore, although FIG6 shows the change in the vertical position of wafer 10 before and after dicing DAF 18 for ease of explanation, in the actual DAF dicing step, the vertical position of wafer 10 remains unchanged; only the vertical position of the frame holding member 51a changes. Also, the pressure of the control air for the injection cylinder 52a can be adjusted by omitting the air supply source shown in the figure, thereby adjusting the expansion speed of the cutting tape T2 to the desired expansion speed. Furthermore, the elongation of the piston rod 52b can also be adjusted, thereby adjusting the expansion of the cutting tape T2 to achieve the desired amount.

[0033] After the DAF dicing step described above has been performed, the frame F supporting the wafer 10 can be removed from the dicing device 50. At this time, the dicing tape T2 supporting the wafer 10 will be in a relaxed state due to the DAF dicing step. Then, as shown in FIG7, the heating assembly 60 is positioned near the exposed dicing tape T2 between the wafer 10 and the frame F. The heating assembly 60 is, for example, an assembly equipped with a heater and an air supply assembly, which sprays warm air outward from the front end. After positioning the heating assembly 60 as shown in FIG7, warm air can be sprayed from the heating assembly 60, and the frame F can be rotated in the direction indicated by arrow R5 to heat the entire area of ​​the dicing tape T2 supporting the wafer 10. In this way, the relaxation of the dicing tape T2 between the wafer 10 and the frame F will be wrinkled (contracted) and returned to a state approximately the same as before the DAF dicing step, thus completing the wrinkling step.

[0034] As described above, after the wrinkling step has been performed, as shown in Figure 7, a support member T3 formed to the same size as the wafer 10 can be disposed on the front side 10a of the wafer 10. This support member T3 can be appropriately selected from materials such as glass plates, PET resin plates, or resin tape. When the support member T3 is disposed on the front side 10a of the wafer 10, an adhesive can be applied to the support surface on the side of the support member T3. After the support member T3 is disposed on the front side 10a of the wafer 10, the cutting tape T2 can be peeled off from the DAF18 disposed on the back side 10b of the wafer 10, thus completing the cutting tape peeling step.

[0035] Furthermore, although the aforementioned support step, DAF dicing step, shrinking step, and dicing tape peeling step are described as forming a configuration for supporting the wafer 10, which has been divided into individual device chips 12', on the frame F, the present invention is not limited thereto. For example, in the support step, as shown in the upper right of FIG4, the back side 10b of the wafer 10, which has a dicing start point 110 formed along the dicing predetermined line 14 but has not yet been divided into individual device chips 12', is disposed on one side 18a of the DAF 18, and the DAF 18 and the wafer 10 are supported on the frame F by the dicing tape T2. In this case, by performing the aforementioned DAF dicing step, the DAF 18 can be diced corresponding to the device chips 12' while the wafer 10 is being diced into individual device chips 12'. Therefore, in this case, the wafer dicing step described above can be omitted to perform the DAF dicing step, and the wrinkling step and tape cutting and peeling step can be performed in the same manner as described above after performing the DAF dicing step.

[0036] As described above, after the tape cutting and peeling step has been performed, the wafer 10, which is clamped by the DAF18 and the support member T3, can be flipped as shown by arrow R6 in Figure 8, with the side equipped with the DAF18 facing upwards, to confirm from the DAF18 side whether the DAF18 has been properly divided to correspond to the device wafer 12'. Furthermore, although Figure 8 shows a visual confirmation method, it is not necessarily limited to visual confirmation. It is also possible to position the device directly below the imaging component (not shown) and confirm the image captured by the imaging component, or further process the captured image data to confirm whether the DAF18 has been properly divided to correspond to the device wafer 12'. With these steps, the DAF division confirmation step is completed.

[0037] Here, depending on the different implementation conditions of the DAF slicing step described above, in the DAF slicing confirmation step, as shown in Figure 8, it can be confirmed that DAF18 did not completely slice each device wafer 12', and the DAF slicing step was not properly implemented. In such a case, it can be considered that the expansion speed and expansion amount when expanding the cutting tape T2 in the above-mentioned DAF slicing step are not appropriate. Therefore, based on the slicing result of DAF18 confirmed by the above-mentioned DAF slicing confirmation step, the expansion speed and expansion amount when expanding the cutting tape T2 by the slicing device 50 can be appropriately adjusted. More specifically, it can be adjusted by increasing the pressure of the control air for the cylinder 52a of the slicing assembly 52, or by setting the extension amount of the piston rod 52b to be longer.

[0038] According to the above embodiment, since the wafer 10 and DAF18 can be supported by the support member T3 in the DAF slicing confirmation step, and the DAF18 side faces the upper surface, it becomes easy and reliable to confirm from the DAF18 side whether the DAF18 has been properly slicing to correspond to the device wafer 12'. Thereby, it becomes possible to appropriately implement the adjustment of the slicing components in the DAF slicing step.

[0039] Furthermore, in the above-described embodiment, as shown in FIG7, a tape peeling step is performed. This step involves placing a support member T3, formed to the same size as the wafer 10, on the front side 10a of the wafer 10, and then peeling the tape T2 from the DAF18 already disposed on the back side 10b of the wafer 10. However, the present invention is not limited to this. For example, as shown in FIG9(a), a support member T4 can also be placed on the front side 10a of the wafer 10 after the DAF dicing step has been completed. The support member T4 is constructed from resin tape that is larger than the opening Fa of the frame F and smaller than the overall shape of the frame F. More specifically, the support member T4 shown in FIG9(a) is prepared, and the roller 70 is rotated in the direction indicated by arrow R7 and moved in the direction indicated by arrow R8 to press the support member T4 against the front side 10a of the wafer 10 and the frame F. Then, as shown in Figure 9(b), the frame F is flipped so that the cutting tape T2 side faces upward, and the cutting tape T2 is pulled apart and peeled off in the direction indicated by arrow R9. Here, the wafer 10 is supported by the support member T4, and the DAF18 disposed on the back side 10b of the wafer 10 is exposed. The DAF dicing confirmation step, which confirms from the DAF18 side whether the DAF18 has been properly diced to the device wafer 12', can be performed in the same manner as described above.

[0040] Furthermore, in the above-described embodiment, although a wafer 10 with multiple devices 12 divided and formed on the front side 10a by a predetermined dividing line 14 is prepared when implementing the DAF dicing verification method of this embodiment, the present invention is not limited to this. The present invention also includes, for example, using a so-called dummy wafer on which no devices 12 are formed on the front side as the workpiece, and preparing a dummy wafer that is diced into multiple wafers along a predetermined dividing line assuming that multiple devices 12 are formed on the front side, or a dummy wafer with a dicing start point formed along the predetermined dividing line, to implement the above-described support step, DAF dicing step, wrinkling step, and DAF dicing verification step. By using a dummy wafer in this way and implementing the DAF dicing verification method of the present invention, and by properly adjusting the expansion speed and expansion amount when expanding the cutting tape in the DAF dicing step, the failure of the DAF dicing step using a regular wafer 10 can be avoided, and economic losses can be minimized.

[0041] 10: Wafer 10a: Front 10b: Back 12: Devices 12': Device wafer 14: Pre-defined dividing line 18:DAF 18a: One side 18b: The Other Side 100: Cutting groove 110: Starting point of segmentation 120: The dividing line of DAF18 20: Cutting device 22: Cutting inserts 30: Grinding device 31: Work Table 32: Maintain surface 34: Frame 36: Grinding components 362: Rotary spindle 364: Wheel Seat 366: Grinding wheel 368: Grinding Stone 40: Laser processing equipment 41: Laser beam irradiation component 42: Concentrator 50: Segmentation device 51: Frame Holding Component 51a: Frame retaining member 51b: Fixture 52: Segmentation Component 52a: Cylinder 52b: Piston rod 53: Expanding cylinder 54:Abutment 60: Heating Component 70: Roller F: Frame Fa: Opening LB: Laser Beam R1~R9: Arrows T1:BG tape T2: Cutting tape T3, T4: Supporting components X, Y: Direction

Claims

1. A method for confirming the dicing of a DAF (Die Attach Film), confirming whether the DAF disposed on the back side of a wafer has been properly diced for each wafer, the aforementioned DAF dicing confirmation method comprising at least the following steps: a support step, wherein a DAF is disposed on one side of the back side of a wafer that has been diced into a plurality of wafers along a predetermined dicing line, or a wafer with a dicing start point formed along a predetermined dicing line, and the wafer is positioned on the opening of an annular frame having an opening for accommodating the wafer, and a dicing tape is attached to the other side of the DAF, thereby supporting the DAF and the wafer on the frame through the dicing tape; a DAF dicing step, wherein the dicing tape between the wafer and the frame is expanded to expand the spacing between adjacent wafers, and the DAF is diced corresponding to the wafer; a shrinking step, wherein the dicing tape between the wafer and the frame is heated to loosen and shrink; The dicing tape peeling step involves placing a support member on the front side of the wafer and peeling the dicing tape off the DAF; and the DAF segmentation confirmation step involves confirming whether the DAF has been segmented to correspond to each wafer.

2. As in the DAF segmentation confirmation method of request item 1, in the DAF segmentation confirmation step, if the DAF does not correspond to the segmentation of each wafer, the expansion speed and expansion amount when expanding the cutting tape will be adjusted in the DAF segmentation step.

Images