The electro-conductive contact pin and manufacturing method thereof

Abstract

The present invention provides a conductive contact needle whose physical or electrical properties are improved in a conductive contact needle formed by stacking multiple metal layers, and a method thereof for manufacturing the same.

Description

[Technical Field]

[0001] This invention relates to a conductive contact needle and a method for manufacturing the same. [Previous Technology]

[0002] A conductive contact pin is a contact pin used in a probe card or test socket to test an object by contacting it. The following is an example of a contact pin for a probe card.

[0003] Electrical characteristic tests of semiconductor devices are performed by bringing a semiconductor wafer close to a probe card with multiple conductive pins and making the conductive pins contact the corresponding electrode pads on the semiconductor wafer. After initial contact is achieved, the semiconductor wafer is brought closer to the probe card. This process is called overdrive. Overdrive involves elastically deforming the conductive pins, ensuring that all conductive pins make proper contact with the electrode pads even if there are deviations in the height of the electrode pads or the conductive pins themselves. Furthermore, the conductive pins elastically deform during overdrive, and their tips move across the electrode pads, thus scrubbing. This scrubbing removes the oxide film from the electrode pad surface and reduces contact resistance.

[0004] This type of conductive contact pin can be fabricated using Micro-Electro-Mechanical Systems (MEMS) processes. The process of fabricating the conductive contact pin using MEMS processes is described below. First, photoresist is coated onto the surface of a conductive substrate, and then the photoresist is patterned. Next, using the photoresist as a mold, metal material is deposited within the opening using electroplating. The photoresist and conductive substrate are then removed to obtain the conductive contact pin. Here, multiple metal materials are stacked along upper and lower layers to form the conductive contact pin. In the case of metal materials with relatively high wear resistance, since the conductivity is relatively low, there is a trade-off between wear resistance and conductivity when multiple metal materials are stacked to fabricate the conductive contact pin. To improve wear resistance at the tip of the conductive contact pin, the metal material with high wear resistance should be configured to be thick, thus reducing the content of relatively high conductive metal material. Therefore, this results in a decrease in the overall conductivity of the conductive contact pin and a reduction in the current carrying capacity.

[0005] On the other hand, since the end of the conductive contact pin is the part that contacts the object, when multiple metal materials are stacked along the upper and lower layers, the following problem arises: it is difficult to improve the physical or electrical properties of the end simply by varying the content of the metal material at the end. [Prior Art Documents] [Patent Documents]

[0006] [Patent Document 1] Korean Patent Registration No. 10-0449308 [Summary of the Invention]

[0007] [The problem the invention aims to solve]

[0008] This invention was made to address the problems of the prior art described above. The object of this invention is to provide a conductive contact needle whose physical or electrical properties are improved in a conductive contact needle formed by stacking multiple metal layers, and a method for manufacturing the same. [Means for Solving the Problem]

[0009] In order to achieve the objective of this invention, the conductive contact pin according to the invention includes: a main body portion, a first stacked portion including a plurality of metal stacked layers; and a first end portion, including a second stacked portion including a plurality of metal stacked layers, wherein at least one metal layer constituting the first stacked portion and at least one metal layer constituting the second stacked portion are not disposed on the same horizontal line.

[0010] In addition, the number of stacked layers of the metal layer constituting the second stacked portion is different from the number of stacked layers of the metal layer constituting the first stacked portion.

[0011] In addition, the number of metal layers constituting the second stacked portion is less than the number of metal layers constituting the first stacked portion.

[0012] In addition, the first stacked portion and the second stacked portion are formed by alternating stacking of a first metal and a second metal, and the number of alternating stacked layers of the first metal and the second stacked portion are different from each other.

[0013] In addition, the first metal is formed from a metal selected from the following: rhodium (Rh), platinum (Pt), iridium (Ir), palladium (palladium) or an alloy thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy or a nickel-phosphorus (NiP) alloy, a nickel-manganese (NiMn), a nickel-cobalt (NiCo) or a nickel-tungsten (NiW) alloy, and the second metal is formed from a metal selected from copper (Cu), silver (Ag), gold (Au) or an alloy thereof.

[0014] In addition, the lowest layer of the first lamination portion includes a first end side vertical portion, which is also continuously formed on the inner sidewall of the second lamination portion and extends in the vertical direction along the inner sidewall of the second lamination portion.

[0015] In addition, the bottom layer of the second lamination is formed of the same metal material as the bottom layer of the first lamination, and the bottom layer of the first lamination is also continuously formed on the inner sidewall of the second lamination.

[0016] In addition, a first metal constituting the lowest layer of the conductive contact pin is disposed between the second metal of the first stacked portion and the second metal of the second stacked portion, and the first metal extends vertically from the lower surface to the upper surface of the conductive contact pin.

[0017] Additionally, it includes a third stacked portion disposed at the second end of the conductive contact pin.

[0018] In addition, at least one metal layer constituting the first stacked portion and at least one metal layer constituting the third stacked portion are not arranged on the same horizontal line.

[0019] In addition, the number of stacked layers of the third stacked layer is different from at least one of the number of stacked layers of the first stacked layer and the number of stacked layers of the second stacked layer.

[0020] In addition, the number of stacking layers in the third stacking section is the same as the number of stacking layers in the second stacking section.

[0021] In addition, the lowest layer of the first lamination portion includes a second end side vertical portion, which is also continuously formed on the inner sidewall of the third lamination portion and extends along the inner sidewall.

[0022] In addition, the bottom layer of the third layer is formed of the same metal material as the bottom layer of the first layer, and the bottom layer of the first layer is also continuously formed on the inner sidewall of the third layer.

[0023] In addition, the metal layer constituting the first stacked portion and the metal layer constituting the third stacked portion are different from each other.

[0024] In addition, the first end portion further includes an outer extension.

[0025] In addition, the first layer is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the thickness of the metal layer with high electrical conductivity is greater than the thickness of the metal layer with high wear resistance. The second layer is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the thickness of the metal layer with high wear resistance is greater than the thickness of the metal layer with high electrical conductivity.

[0026] In addition, the first layer is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the content of the metal layer with high electrical conductivity is greater than the content of the metal layer with high wear resistance. The second layer is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the content of the metal layer with high wear resistance is greater than the content of the metal layer with high electrical conductivity.

[0027] On the other hand, in order to achieve the purpose of the present invention, the method for manufacturing a conductive contact needle according to the present invention is as follows: the conductive contact needle includes: a main body portion, a first stacked portion including a plurality of metal stacked layers; and a first end portion, a second stacked portion including a plurality of metal stacked layers, wherein the first stacked portion and the second stacked portion are respectively plated using a mold.

[0028] Furthermore, the mold is formed from an anodized film material. [Effects of the Invention]

[0029] The present invention provides a conductive contact needle whose physical or electrical properties are improved in a conductive contact needle formed by stacking multiple metal layers, and a method thereof.

Implementation Method

[0031] The following content is merely illustrative of the principles of the invention. Therefore, even if not explicitly described or illustrated in this specification, those skilled in the art can implement the principles of the invention and invent various devices included within the concept and scope of the invention. In addition, all terms and embodiments listed in this specification should be understood in principle as being for the purpose of clearly understanding the concept of the invention only, and are not limited to the embodiments and states specifically listed above.

[0032] The objectives, features and advantages described herein will become even more apparent from the following detailed description in relation to the accompanying drawings, and thus the technical ideas of the invention can be readily implemented by those skilled in the art to which it pertains.

[0033] The embodiments described in this specification will be described with reference to cross-sectional and / or perspective views, which serve as ideal illustrative diagrams of the present invention. To effectively illustrate the technical content, the thickness of the films and regions shown in these figures is exaggerated. The shapes of the illustrative diagrams may be varied due to manufacturing techniques and / or tolerances. Furthermore, the number of conductive contact pins shown in the figures is only illustratively shown in part. Therefore, embodiments of the present invention are not limited to the specific shapes shown, but also include variations in shapes generated according to the manufacturing process. Technical terms used in this specification are for illustrative purposes only and are not intended to limit the invention. Unless the context clearly specifies otherwise, singular expressions include plural expressions. In this specification, it should be understood that terms such as "comprising" or "having" are intended to specify the presence of the features, numbers, steps, actions, constituent elements, components, or combinations thereof described in this specification, without precluding the presence or additional possibilities of one or more other features or numbers, steps, actions, constituent elements, components, or combinations thereof.

[0034] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In describing various embodiments, even if the embodiments differ, for convenience, the same names and reference numerals will be given to components that perform the same function. Furthermore, for convenience, structures and operations already described in other embodiments will be omitted.

[0035] First Embodiment Hereinafter, a conductive contact pin (100) according to a preferred first embodiment of the present invention will be described with reference to FIG1A, FIG1B to FIG8(a) and FIG8(b). FIG1A is a front perspective view of the conductive contact pin (100) according to a preferred first embodiment of the present invention, FIG1B is a rear perspective view of the conductive contact pin (100) according to a preferred first embodiment of the present invention, FIG2(a)-FIG2(d) to FIG7(a)-FIG7(d) are diagrams showing a method of manufacturing the conductive contact pin (100) according to a preferred first embodiment of the present invention, and FIG8(a) and FIG8(b) are perspective views of the first end (FIG8(a)) and the second end (FIG8(b)) of the conductive contact pin (100) according to a preferred first embodiment of the present invention.

[0036] Referring first to FIG1A and FIG1B, the conductive contact pin (100) according to a preferred first embodiment of the present invention includes a first end (102), a second end (103), and a main body portion (101) disposed between the first end (102) and the second end (103). Here, the first end (102) and the second end (103) are the parts that contact the object. Preferably, the first end (102) is the part that contacts the object being detected, and the second end (103) is the part that contacts or connects to the object of the detection device.

[0037] The conductive contact pin (100) includes: a main body (101) including a first stacked portion (110) comprising a plurality of metal stacked layers; and a first end portion (102) including a second stacked portion (120) comprising a plurality of metal stacked layers. At least one metal layer constituting the first stacked portion (110) and at least one metal layer constituting the second stacked portion (120) are not disposed on the same horizontal line.

[0038] The number of stacked layers of the second stacked portion (120) disposed at the first end (102) of the conductive contact pin (100) is different from the number of stacked layers of the first stacked portion (110) disposed on the main body portion (101). Preferably, the number of stacked layers of the second stacked portion (120) disposed at the first end (102) of the conductive contact pin (100) is formed by a number of fewer stacked layers than the number of stacked layers of the first stacked portion (110) disposed on the main body portion (101).

[0039] The second end (103) of the conductive contact pin (100) is constructed by laminating the same metal layer as the main body (101) with the same number of lamination layers. The second end (103) of the conductive contact pin (100) can be formed together with the main body (101) during the plating process.

[0040] The part where the number of metal layers changes from the main body (101) of the conductive contact needle (100) to one side is the first end (102) of the conductive contact needle (100), and the first end (102) and the main body (101) can be distinguished by the difference in the number of metal layers.

[0041] By constructing the first laminated portion (110) and the second laminated portion (120), the physical or electrical properties of the main body portion (101) and the first end portion (102) of the conductive contact needle (100) can be made different from each other. By making the laminated structures of the first laminated portion (110) and the second laminated portion (120) different from each other, the content of metals with high conductivity in the main body portion (101) of the conductive contact needle (100) can be increased, and the content of metals with high wear resistance in the first end portion (102) of the conductive contact needle (100) can be increased. In this way, the current carrying capacity of the conductive contact needle (100) can be improved.

[0042] The multiple metal layers may be composed of a first metal (210) and a second metal (230). The first metal (210) is a metal with relatively high wear resistance or hardness compared to the second metal (230), and the second metal (230) may be formed of a metal with relatively high electrical conductivity compared to the first metal (210). The first metal (210) is preferably selected from the following metals: rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Ph), or alloys thereof, or palladium-cobalt (PdCo) alloys, palladium-nickel (PdNi) alloys, or nickel-phosphorus (NiP) alloys, nickel-manganese (NiMn), nickel-cobalt (NiCo), or nickel-tungsten (NiW) alloys, and the second metal (230) may be selected from copper (Cu), silver (Ag), and gold (Au). Here, in addition to the metals or alloys mentioned above, the first metal (210) and the second metal (230) may include other metals or alloys, and are not limited to the exemplary materials described above.

[0043] To improve the wear resistance of the conductive contact pin (100), the lowest and highest layers of the first stacked portion (110) and the second stacked portion (120) are formed of a first metal (210). Multiple metal layers can be stacked alternately in the order of first metal (210), second metal (230), and first metal (210) starting from the lowest layer. Multiple metal layers can be formed from at least three layers, and can be formed from an odd number of layers of three or more layers. However, the number of metal layers is not limited to this. The first stacked portion (110) and the second stacked portion (120) can be formed by alternating stacking of the first metal (210) and the second metal (230), in which case the number of alternating stacked layers of the first metal (210) and the second stacked portion (120) is different from each other.

[0044] The length of the second stacked portion (120) is in the range of 100 μm to 400 μm. The conductive contact pin (100) can be inserted into the guide plate of the probe card for use. In this case, the first end (102) of the conductive contact pin (100) protrudes from the lower part of the guide plate (lower guide plate). In this state, if the conductive contact pin (100) is used repeatedly over a long period of time, foreign matter will adhere to the first end (102) side. In order to remove it, a process of polishing the first end (102) is performed. Since the process of polishing the first end (102) is performed, the length of the conductive contact pin (100) is shortened. It is preferable that the protrusion length of the conductive contact pin (100) to the lower part of the guide plate (lower guide plate) is in the range of 100 μm to 400 μm. If the protrusion length is less than 100 μm due to the polishing process, the conductive contact pin (100) will be replaced with a new one. By having a length of 100 μm to 400 μm, even if the first end (102) is polished within the range of 100 μm to 400 μm, the cross-sectional shape of the conductive contact pin (100) can be maintained in its initial state because the second layer (120) can exist in the first end (102).

[0045] In the polishing process, if the second deposit (120) is no longer present, it is preferable to replace it with a new conductive contact pin (100). The extent of the second deposit (120) remaining can be confirmed by the appearance of the second deposit (120) exposed on the side of the conductive contact pin (100).

[0046] The conductive contact pin (100) according to the first embodiment is manufactured by plating the first stacked portion (110) and the second stacked portion (120) using a mold. Hereinafter, a method for manufacturing the conductive contact pin (100) according to the preferred first embodiment of the present invention will be described with reference to FIGS. 2(a)-2(d) to FIG. 7(a)-7(d).

[0047] Referring to Figure 2(a)-Figure 2(d), Figure 2(a) is a plan view of the mold (10) having the first internal space (11), Figure 2(b) is a cross-sectional view of Figure 2(a) along line A-A', Figure 2(c) is a cross-sectional view of Figure 2(a) along line B-B', and Figure 2(d) is a cross-sectional view of Figure 2(a) along line C-C'.

[0048] Referring to Figures 2(a)-2(d), a first internal space (11) is formed in the mold (10), and a seed layer (20) is disposed at the lower part of the mold (10).

[0049] The mold (10) may be formed from an anodic oxide film, photoresist, silicon wafer, or a similar material. However, it is preferred that the mold (10) be formed from an anodic oxide film material. An anodic oxide film refers to a film formed by anodizing a metal as a base material, and pores refer to holes formed during the process of anodizing a metal to form an anodic oxide film. For example, if the metal as a base material is aluminum (Al) or an aluminum alloy, an anodic oxide film of aluminum oxide (Al2O3) material is formed on the surface of the base material if the base material is anodized. The anodic oxide film formed as described above is vertically divided into a barrier layer in which no pores are formed inside and a porous layer in which pores are formed inside. In the base material on which the anodic oxide film with the barrier layer and the porous layer is formed on the surface, if the base material is removed, only the anodic oxide film of aluminum oxide (Al2O3) material is retained. Anodized films can be formed by removing the barrier layer formed during anodizing and having pores that are continuous from top to bottom, or by retaining the barrier layer formed during anodizing and sealing one end of the pores at the top or bottom.

[0050] The anodic oxide film has a coefficient of thermal expansion of 2 ppm / ℃ to 3 ppm / ℃. Therefore, when exposed to high-temperature environments, the thermal deformation caused by temperature is small. Therefore, even in high-temperature environments, precision conductive contact pins (100) can be manufactured without thermal deformation.

[0051] In the aspect of manufacturing the conductive contact pin (100) according to a preferred embodiment of the present invention using a mold (10) of anodized film material instead of a photoresist mold, it is possible to achieve a precise and fine shape that was previously limited when implemented as a photoresist mold.

[0052] A seed layer (20) is disposed on the lower surface of the mold (10). The seed layer (20) can be disposed on the lower surface of the mold (10) before the first internal space (11) is formed in the mold (10). On the other hand, the operability of the mold (10) can be improved by forming a support substrate (not shown) at the lower part of the mold (10). Alternatively, in this case, the seed layer (20) can be formed on the upper surface of the support substrate (not shown) and the mold (10) with the first internal space (11) formed can be attached to the support substrate (not shown) for use. The seed layer (20) can be formed of copper (Cu) material and can be formed by deposition method. When the second deposited portion (120) is formed by electroplating, the seed layer (20) is used to improve the plating quality of the second deposited portion (120).

[0053] The first internal space (11) can be formed by wet etching of a mold (10) made of anodized film material. For this purpose, a photoresist can be disposed on the upper surface of the mold (10) and patterned thereon. Then, the anodized film in the patterned and opened area reacts with an etching solution to form the first internal space (11). Specifically, before forming the first internal space (11), a photosensitive material can be disposed on the upper surface of the mold (10) and then an exposure process and a development process can be performed. The photosensitive material can form an open area by the exposure process and the development process, and at least a portion of it is patterned and removed. The mold (10) made of anodized film material performs an etching process by removing the open area of ​​the photosensitive material using a patterning process, and removes the anodized film at the position corresponding to the internal space (11) using an etching solution to form the first internal space (11).

[0054] Next, referring to Figures 3(a)-3(d), Figure 3(a) is a plan view of the mold (10) that forms the second layer (120) in the first internal space (11), Figure 3(b) is a cross-sectional view along A-A' of Figure 3(a), Figure 3(c) is a cross-sectional view along B-B' of Figure 3(a), and Figure 3(d) is a cross-sectional view along C-C' of Figure 3(a).

[0055] The step of performing an electroplating process in the first internal space (11) of the mold (10) to form the second laminated portion (120) is performed. Multiple electroplating processes are performed to deposit multiple metal layers in the thickness direction of the conductive contact pin (100) to form the second laminated portion (120). The second laminated portion (120) is configured by laminating at least two or more metals selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (palladium) or the like, or palladium-cobalt (PdCo) alloy, palladium-nickel (PdNi) alloy or nickel-phosphorus (NiP) alloy, nickel-manganese (NiMn), nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloy, copper (Cu), silver (Ag), and gold (Au). For example, a first metal (210) of palladium-cobalt (PdCo) alloy and a second metal (230) of copper (Cu) can be alternately laminated. Here, the first metal (210) can improve the wear resistance of the first end (102) of the conductive contact pin (100), and the second metal (230) can improve the conductivity of the first end (102) of the conductive contact pin (100).

[0056] When the plating process is completed, a planarization process can be performed. The metal protruding to the upper surface of the mold (10) is removed and planarized by a chemical mechanical polishing (CMP) process.

[0057] Next, refer to Figures 4(a)-4(d), where Figure 4(a) is a plan view of the mold (10) with a portion of the mold (10) removed to form the second internal space (12), Figure 4(b) is a cross-sectional view along A-A' of Figure 4(a), Figure 4(c) is a cross-sectional view along B-B' of Figure 4(a), and Figure 4(d) is a cross-sectional view along C-C' of Figure 4(a).

[0058] A process is performed to remove a portion of the mold (10). A portion of the mold (10) is removed to form a second internal space (12) in the mold (10). Specifically, an exposure process and a development process are performed after a photosensitive material is disposed on the upper surface of the mold (10). The photosensitive material can form an opening area by the exposure process and the development process, and at least a portion of it is patterned and removed. An etching process is performed by removing the opening area of ​​the photosensitive material using a patterning process, and a portion of the mold (10) is removed using an etching solution to form the second internal space (12).

[0059] The mold (10) is exposed on three sides of the second internal space (12), and the second stacked portion (120) is exposed on one side.

[0060] Next, refer to Figures 5(a)-5(d). Figure 5(a) is a plan view of the mold (10) that forms the first layer (110) in the second internal space (12), Figure 5(b) is a cross-sectional view along A-A' of Figure 5(a), Figure 5(c) is a cross-sectional view along B-B' of Figure 5(a), and Figure 5(d) is a cross-sectional view along C-C' of Figure 5(a).

[0061] The step of forming the first laminated portion (110) is performed. The first laminated portion (110) is formed in the second internal space (12) formed in the previous step using an electroplating process.

[0062] The first laminated portion (110) is integrated with the second laminated portion (120) made in the previous step. As explained above, the second laminated portion (120) is exposed in one side of the second interior space (12), and the first laminated portion (110) and the second laminated portion (120) are integrated in that side.

[0063] The first laminated portion (110) is configured by laminating at least two or more metals selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Palladium) or alloys thereof, or palladium-cobalt (PdCo) alloys, palladium-nickel (PdNi) alloys or nickel-phosphorus (NiP) alloys, nickel-manganese (NiMn), nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloys, copper (Cu), silver (Ag), and gold (Au). For example, a first metal (210) made of palladium-cobalt (PdCo) alloy and a second metal (230) made of copper (Cu) may be alternately laminated. Here, the first metal (210) can improve the elastic deformation of the main body (101) of the conductive contact needle (100), and the second metal (230) can improve the conductivity of the main body (101) of the conductive contact needle (100).

[0064] FIG6 is an enlarged view of the dashed line portion (Z) of FIG5(a)-5(d). FIG6 is a diagram showing more specifically the formation structure of the metal layer according to the plating process of FIG5(a)-5(d). For ease of explanation, the "└" formation structure of the metal layer shown in FIG6 and FIG8(a), FIG8(b) is omitted in other figures of the first embodiment.

[0065] Since the first stacked portion (110) is formed after the second stacked portion (120) is disposed, when the first stacked portion (110) is formed by plating, the lower seed layer (20) and the inner sidewall (122) of the second stacked portion (120) are seed functional layers grown by plating. Therefore, the lowest layer (111) of the first stacked portion (110) has a first end side vertical portion (111a), and the first end side vertical portion (111a) is also continuously formed on the inner sidewall (122) of the second stacked portion (120) and extends in the vertical direction along the inner sidewall (122) of the second stacked portion (120). The bottom layer (111) of the first laminate (110) and the bottom layer (121) of the second laminate (120) are not formed to have the same thickness, but the bottom layer (111) of the first laminate (110) and the bottom layer (121) of the second laminate (120) are formed to be made of the same material.

[0066] After forming the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a), if a subsequent plating process is performed, the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a) is a seed layer for plating growth, and the metal layer disposed on the upper surface of the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a) has a "└" side pattern on the first end (102) side. If a subsequent plating process is performed, a plurality of metal layers with "└" side patterns are formed on the first end (102) side of the first stacked portion (110) and constitute the first stacked portion (110).

[0067] The lowest layer (121) of the second stacked portion (120) is formed of the same metal material as the lowest layer (111) of the first stacked portion (110), and the lowest layer (111) of the first stacked portion (110) is also continuously formed on the inner sidewall (122) of the second stacked portion (120). When the first metal (210) and the second metal (230) are alternately stacked to form a conductive contact needle, the first metal (210) constituting the lowest layer (111) of the conductive contact needle (100) is disposed between the second metal (230) of the first stacked portion (110) and the second metal (230) of the second stacked portion (120). The first metal (210) extends vertically from the lower surface to the upper surface of the conductive contact needle (100).

[0068] Since the bottom layer (111) of the first laminate (110), the bottom layer (121) of the second laminate (120), the top layer (123) of the second laminate (120), the middle layer (125) of the second laminate (120) and the vertical portion (111a) of the first end side are formed of the same material, the second laminate (120) can be prevented from being peeled off from the first laminate (110) and damaged.

[0069] In addition, by forming a plurality of metal layers with a “└” side shape on the first end (102) side of the first stacked portion (110), damage due to shearing can be prevented on the first end (102) side.

[0070] On the other hand, the first laminated portion (110) may be configured first and then the second laminated portion (120) may be formed, which is included in the technical concept of the present invention. In this case, the inner sidewall of the first laminated portion (110) becomes a seed layer for deposition growth when the second laminated portion (120) is formed. However, as in the embodiment of the present invention, according to the configuration of first forming the second laminated portion (120) constituting the first end (102) and then forming the first laminated portion (110) constituting the main body portion (101), since the metal layer constituting the second laminated portion (120) is formed in a planar shape, it is advantageous in that the electrical or physical properties of the first end (102) can be made uniform.

[0071] Next, refer to Figures 7(a)-7(d), where Figure 7(a) is a plan view of the conductive contact pin (100), Figure 7(b) is a cross-sectional view along A-A' of Figure 7(a), Figure 7(c) is a cross-sectional view along B-B' of Figure 7(a), and Figure 7(d) is a cross-sectional view along C-C' of Figure 7(a).

[0072] The process of removing the mold (10) and the seed layer (20) is performed after the previous steps. If the mold (10) is made of anodized film material, the mold (10) is removed using a solution that selectively reacts with the anodized film material. If the seed layer (20) is made of copper (Cu) material, the seed layer (20) is removed using a solution that selectively reacts with copper (Cu).

[0073] FIG8(a) is a perspective view of the front side, i.e. the first end (102), of the conductive contact pin (100) according to a preferred first embodiment of the present invention, and FIG8(b) is a perspective view of the back side, i.e. the second end (103), of the conductive contact pin (100) according to a preferred first embodiment of the present invention.

[0074] The difference lies in the following aspects: the metal layer of the second end (103) is arranged continuously on the same horizontal line as the metal layer of the first layer (110) constituting the main body (101), while the second layer (120) of the first end (102) is arranged not on the same horizontal line as the metal layer constituting the first layer (110).

[0075] Referring to Figure 8(a) and Figure 8(b), the second stacking part (120) is a structure composed of five metal layers stacked in sequence from the lower surface to the upper surface, namely the first metal (210), the second metal (230), the first metal (210), the second metal (230), and the first metal (210). The first stacking part (110) is a structure composed of thirteen metal layers stacked in sequence, namely the first metal (210), the second metal (230), the first metal (210), the second metal (230), the first metal (210), the second metal (230), the first metal (210), the second metal (230), the first metal (210), the second metal (230), and the first metal (210).

[0076] Although the thickness of the metal layers constituting the first laminated portion (110) is shown as the same in the figure, the thickness of the metal layers constituting the first laminated portion (110) may be different from each other. In the metal layers constituting the first laminated portion (110), any metal layer may be formed with a thickness greater than the other metal layers or with a thinner thickness. Furthermore, although the thickness of the metal layers constituting the second laminated portion (110) is shown as the same in the figure, the thickness of the metal layers constituting the second laminated portion (120) may be different from each other. In the metal layers constituting the first laminated portion (110), any metal layer may be formed with a thickness greater than the other metal layers or with a thinner thickness.

[0077] The first end (102) of the conductive contact pin (100) may be formed by a shape in which the cross-sectional area decreases towards its end. However, even in this case, the stacked structure of the second stacked portion (120) is maintained as is.

[0078] Second Embodiment Next, a second embodiment of the present invention will be described. However, the embodiments described below focus on characteristic constituent elements compared with the first embodiment, and descriptions of constituent elements that are the same as or similar to those in the first embodiment are omitted as much as possible.

[0079] Hereinafter, a conductive contact pin (100) according to a preferred second embodiment of the present invention will be described with reference to FIG9(a), FIG9(b) to FIG17(a), FIG17(b). FIG9(a) is a front perspective view of the conductive contact pin (100) according to a preferred second embodiment of the present invention, FIG9(b) is a rear perspective view of the conductive contact pin (100) according to a preferred second embodiment of the present invention, FIG10(a)-FIG10(e) to FIG16(a)-FIG16(e) are diagrams showing a method of manufacturing the conductive contact pin (100) according to a preferred second embodiment of the present invention, FIG17(a) is a perspective view of the first end of the conductive contact pin (100) according to a preferred second embodiment of the present invention, and FIG17(b) is a perspective view of the second end of the conductive contact pin (100) according to a preferred second embodiment of the present invention.

[0080] The conductive contact pin (100) according to the preferred second embodiment of the present invention differs from the conductive contact pin (100) according to the first embodiment in that a third stacked portion (130) is additionally disposed at the second end (103) of the conductive contact pin (100). Since the configuration of the second stacked portion (120) disposed at the first end (102) according to the second embodiment is the same as that of the first embodiment, its specific description will be omitted below.

[0081] The conductive contact pin (100) includes: a main body (101) including a first laminated portion (110) comprising a plurality of metal laminated layers; a first end portion (102) including a second laminated portion (120) comprising a plurality of metal laminated layers; and a second end portion (103) including a third laminated portion (130) comprising a plurality of metal laminated layers. The first laminated portion (110), the second laminated portion (120), and the third laminated portion (130) are formed using different plating processes.

[0082] At least one metal layer constituting the first lamination section (110) and at least one metal layer constituting the third lamination section (130) are not arranged on the same horizontal line.

[0083] The number of laminated layers in the third laminated portion (130) disposed at the second end (103) of the conductive contact pin (100) is different from the number of laminated layers in the first laminated portion (110) disposed in the main body portion (101). Preferably, the number of laminated layers in the third laminated portion (130) disposed at the second end (103) of the conductive contact pin (100) is less than the number of laminated layers in the first laminated portion (110) disposed in the main body portion (101).

[0084] By constructing a composite structure of a first laminate (110), a second laminate (120), and a third laminate (130), the physical or electrical properties of the main body (101), the first end (102), and the second end (103) of the conductive contact needle (100) can be made different from each other. The amount of metal with high conductivity contained in the main body (101) of the conductive contact needle (100) can be increased, the amount of metal with high wear resistance contained in the first end (102) of the conductive contact needle (100) can be increased, and the amount of metal with high conductivity contained in the second end (103) of the conductive contact needle (100) can be increased. In this way, the current carrying capacity of the main body (101) can be improved, the wear resistance of the first end (102) can be improved, and the generation of electric arcs at the second end (103) can be prevented.

[0085] The multiple metal layers may be composed of a first metal (210) and a second metal (230). The first metal (210) is a metal with relatively high wear resistance or hardness compared to the second metal (230), and the second metal (230) may be formed of a metal with relatively high electrical conductivity compared to the first metal (210). The first metal (210) is preferably selected from the following metals: rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Ph), or alloys thereof, or palladium-cobalt (PdCo) alloys, palladium-nickel (PdNi) alloys, or nickel-phosphorus (NiP) alloys, nickel-manganese (NiMn), nickel-cobalt (NiCo), or nickel-tungsten (NiW) alloys, and the second metal (230) may be selected from copper (Cu), silver (Ag), and gold (Au). Here, in addition to the metals or alloys mentioned above, the first metal (210) and the second metal (230) may include other metals or alloys, and are not limited to the exemplary materials described above.

[0086] To improve the wear resistance of the conductive contact pin (100), the lowest and highest layers of the first stacked portion (110) and the third stacked portion (130) are formed of a first metal (210). Multiple metal layers can be stacked alternately in the order of first metal (210), second metal (230), and first metal (210) starting from the lowest layer. Multiple metal layers can be formed from at least three layers, and can be formed from an odd number of layers of three or more layers. However, the number of metal layers is not limited to this. The first stacked portion (110) and the third stacked portion (120) can be formed by alternating stacking of the first metal (210) and the second metal (230). In this case, the number of alternating stacked layers of the first metal (210) and the second metal (230) in the first stacked portion (110) and the third stacked portion (130) are different from each other.

[0087] The length of the third laminate (130) is in the range of 100 μm to 400 μm. By having the third laminate (130) in the range of 100 μm to 400 μm, even if the second end (103) is polished within the range of 100 μm to 400 μm, the third laminate (130) can be present at the second end (103), and the cross-sectional shape of the conductive contact pin (100) can be maintained in its initial state. When performing the polishing process, if the third laminate (130) is no longer present, it is preferable to replace it with a new conductive contact pin (100). The degree of residue of the third laminate (130) can be confirmed by the appearance of the third laminate (130) exposed on the side of the conductive contact pin (100).

[0088] The conductive contact pin (100) according to the second embodiment is manufactured by plating the first stacked portion (110), the second stacked portion (120), and the third stacked portion (130) using a mold. Hereinafter, a method for manufacturing the conductive contact pin (100) according to the preferred second embodiment of the present invention will be described with reference to Figures 10(a)-10(e) to 16(a)-16(e).

[0089] Referring to Figures 10(a)-10(e), Figure 10(a) is a plan view of the mold (10) having the first internal space (11), Figure 10(b) is a cross-sectional view of Figure 10(a) along line A-A', Figure 10(c) is a cross-sectional view of Figure 10(a) along line B-B', Figure 10(d) is a cross-sectional view of Figure 10(a) along line C-C', and Figure 10(e) is a cross-sectional view of Figure 10(a) along line D-D'.

[0090] Referring to Figures 10(a)-10(e), a first internal space (11) is formed in the mold (10), and a seed layer (20) is disposed in the lower part of the mold (10).

[0091] In the aspect of manufacturing the conductive contact pin (100) according to a preferred embodiment of the present invention using a mold (10) of anodized film material instead of a photoresist mold, it is possible to achieve a precise and fine shape that was previously limited when implemented as a photoresist mold.

[0092] A seed layer (20) is disposed on the lower surface of the mold (10). The seed layer (20) can be disposed on the lower surface of the mold (10) before the first internal space (11) is formed in the mold (10). On the other hand, the operability of the mold (10) can be improved by forming a support substrate (not shown) at the lower part of the mold (10). Alternatively, in this case, the seed layer (20) can be formed on the upper surface of the support substrate (not shown) and the mold (10) with the first internal space (11) formed can be attached to the support substrate (not shown) for use. The seed layer (20) can be formed of copper (Cu) material and can be formed by deposition method. When the second deposited portion (120) is formed by electroplating, the seed layer (20) is used to improve the plating quality of the second deposited portion (120).

[0093] The first internal space (11) can be formed by wet etching of a mold (10) made of anodized film material. For this purpose, a photoresist can be disposed on the upper surface of the mold (10) and patterned thereon. Then, the anodized film in the patterned and opened area reacts with an etching solution to form the first internal space (11). Specifically, before forming the first internal space (11), a photosensitive material can be disposed on the upper surface of the mold (10) and then an exposure process and a development process can be performed. The photosensitive material can form an open area by the exposure process and the development process, and at least a portion of it is patterned and removed. The mold (10) made of anodized film material performs an etching process by removing the open area of ​​the photosensitive material using a patterning process, and removes the anodized film at the position corresponding to the internal space (11) using an etching solution, thereby forming the first internal space (11).

[0094] Next, referring to Figures 11(a)-11(e), Figure 11(a) is a plan view of the mold (10) forming the second layer (120) in the first internal space (11), Figure 11(b) is a cross-sectional view along A-A' of Figure 11(a), Figure 11(c) is a cross-sectional view along B-B' of Figure 11(a), Figure 11(d) is a cross-sectional view along C-C' of Figure 11(a), and Figure 11(e) is a cross-sectional view along D-D' of Figure 11(a).

[0095] The step of performing an electroplating process in the first internal space (11) of the mold (10) to form the second laminated portion (120) is performed. Multiple electroplating processes are performed to deposit multiple metal layers in the thickness direction of the conductive contact pin (100) to form the second laminated portion (120). The second laminated portion (120) is configured by laminating at least two or more metals selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (PdCo) alloys, palladium-nickel (PdNi) alloys or nickel-phosphorus (NiP) alloys, nickel-manganese (NiMn), nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloys, copper (Cu), silver (Ag), and gold (Au). For example, a first metal (210) of palladium-cobalt (PdCo) alloy and a second metal (230) of copper (Cu) can be alternately laminated. Here, the first metal (210) can improve the wear resistance of the first end (102) of the conductive contact pin (100), and the second metal (230) can improve the conductivity of the first end (102) of the conductive contact pin (100). In this way, the current-capacity allowable of the conductive contact pin (100) can be increased compared to the case where it is formed only by the first metal (210).

[0096] When the plating process is completed, a planarization process can be performed. The metal protruding to the upper surface of the mold (10) is removed and planarized by a chemical mechanical polishing (CMP) process.

[0097] Next, refer to Figures 12(a)-12(e). Figure 12(a) is a plan view of the mold (10) that forms the third layer (130) in the third internal space. Figure 12(b) is a cross-sectional view along A-A' of Figure 12(a). Figure 12(c) is a cross-sectional view along B-B' of Figure 12(a). Figure 12(d) is a cross-sectional view along C-C' of Figure 12(a). Figure 12(e) is a cross-sectional view along D-D' of Figure 12(a).

[0098] A process is performed to remove a portion of the mold (10) to form a third internal space in the mold (10). The third internal space is formed at a position corresponding to the second end (103) and can be formed by the same process as the process for forming the first internal space (11) described above.

[0099] The step of performing an electroplating process in the third internal space of the mold (10) to form the third stacked portion (130) is performed. Multiple electroplating processes are performed to deposit multiple metal layers in the thickness direction of the conductive contact pin (100) to form the third stacked portion (130). The third stacked portion (130) is configured by stacking at least two or more metals selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (PdCo) alloys, palladium-nickel (PdNi) alloys or nickel-phosphorus (NiP) alloys, nickel-manganese (NiMn), nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloys, copper (Cu), silver (Ag), and gold (Au). For example, a first metal (210) of palladium-cobalt (PdCo) alloy can be laminated with a second metal (230) of copper (Cu) and gold (Au). The laminated structures shown in Figures 12(a)-12(e) are structures formed by laminating palladium-cobalt (PdCo) alloy, copper (Cu), gold (Au), copper (Cu), and palladium-cobalt (PdCo) alloy in that order. Here, the first metal (210) improves the wear resistance of the second end (102) of the conductive contact pin (100), and the second metal (230) improves the conductivity of the second end (102) of the conductive contact pin (100). In particular, by containing gold (Au) in the central position, arcing at the second end (103) can be more effectively prevented.

[0100] When the plating process is completed, a planarization process can be performed. The metal protruding to the upper surface of the mold (10) is removed and planarized by a chemical mechanical polishing (CMP) process.

[0101] Next, refer to Figures 13(a)-13(e). Figure 13(a) is a plan view of the mold (10) with a portion of the mold (10) removed to form the second internal space (12). Figure 13(b) is a cross-sectional view along A-A' of Figure 13(a). Figure 13(c) is a cross-sectional view along B-B' of Figure 13(a). Figure 13(d) is a cross-sectional view along C-C' of Figure 13(a). Figure 13(e) is a cross-sectional view along D-D' of Figure 13(a).

[0102] A process for removing a portion of the mold (10) is performed. A portion of the mold (10) is removed to form a second internal space (12) in the mold (10). Specifically, an exposure process and a development process are performed after a photosensitive material is disposed on the upper surface of the mold (10). The photosensitive material can form an opening area by the exposure process and the development process, and at least a portion of it is patterned and removed. An etching process is performed by removing the opening area of ​​the photosensitive material using a patterning process, and a portion of the mold (10) is removed using an etching solution, thereby forming the second internal space (12).

[0103] The mold (10) is exposed on both sides of the second internal space (12), and the second stacked portion (120) and the third stacked portion (130) are exposed on both sides.

[0104] Next, refer to Figures 14(a)-14(e). Figure 14(a) is a plan view of the mold (10) that forms the first layer (110) in the second internal space (12). Figure 14(b) is a cross-sectional view along A-A' of Figure 14(a). Figure 14(c) is a cross-sectional view along B-B' of Figure 14(a). Figure 14(d) is a cross-sectional view along C-C' of Figure 14(a). Figure 14(e) is a cross-sectional view along D-D' of Figure 14(a).

[0105] Perform the step of forming the first laminated portion (110). The first laminated portion (110) is formed in the second internal space (12) formed in the previous step using an electroplating process.

[0106] The first laminated portion (110) is integrated with the second laminated portion (120) and the third laminated portion (130) manufactured in the previous steps. As explained above, the second laminated portion (120) is exposed on one side of the second interior space (12), and the first laminated portion (110) and the second laminated portion (120) are integrated on that side. In addition, the third laminated portion (130) is exposed on the other side of the second interior space (12), and the first laminated portion (110) and the third laminated portion (130) are integrated on that other side.

[0107] The first laminated portion (110) is configured by laminating at least two or more metals selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Palladium) or the like, or palladium-cobalt (PdCo) alloys, palladium-nickel (PdNi) alloys or nickel-phosphorus (NiP) alloys, nickel-manganese (NiMn), nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloys, copper (Cu), silver (Ag), and gold (Au). For example, it can be formed by alternating lamination of a first metal (210) made of palladium-cobalt (PdCo) alloy and a second metal (230) made of copper (Cu). Here, the first metal (210) can improve the elastic deformation of the main body (101) of the conductive contact needle (100), and the second metal (230) can improve the conductivity of the main body (101) of the conductive contact needle (100).

[0108] Figures 15(a) and 15(b) are enlarged views of the dashed lines (Z1, Z2) in Figures 14(a)-14(e). Figures 15(a) and 15(b) show more specifically the formation structure of the metal layer according to the plating process of Figures 14(a)-14(e). For ease of explanation, the "└" and "┘" formation structures of the metal layer shown in Figures 15(a), 15(b) and 17(a), 17(b) will be omitted in other figures of the second embodiment.

[0109] Since the first stacked portion (110) is formed after the second stacked portion (120) and the third stacked portion (130) are configured, the seed layer (20) at the bottom, the inner sidewall (122) of the second stacked portion (120) and the inner sidewall (132) of the third stacked portion (130) are seed functional layers grown by plating when the first stacked portion (110) is formed by plating. As a result, the lowest layer (111) of the first stacked portion (110) is also continuously formed on the inner sidewall (122) of the second stacked portion (120) and the inner sidewall (132) of the third stacked portion (130). The lowest layer (111) of the first lamination (110) has a first end-side vertical portion (111a) that extends vertically along the inner sidewall (122) of the second lamination (120) and a second end-side vertical portion (111b) that extends vertically along the inner sidewall (132) of the third lamination (130).

[0110] The bottom layer (111) of the first laminate (110), the bottom layer (121) of the second laminate (120), and the bottom layer (131) of the third laminate (130) are not formed to have the same thickness, but the bottom layer (111) of the first laminate (110), the bottom layer (121) of the second laminate (120), and the third laminate (130) are formed to be made of the same material.

[0111] After forming the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a) and the second end side vertical portion (111b), if a subsequent plating process is performed, the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a) and the second end side vertical portion (111b) is a seed layer for plating growth. Therefore, the metal layer disposed on the upper surface of the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a) and the second end side vertical portion (111b) has a "└" side pattern on the first end (102) side and a "┘" side pattern on the second end (103) side. If the subsequent plating process is performed, a plurality of metal layers with a “└” side shape are formed on the first end (102) side of the first stacked portion (110) and constitute the first stacked portion (110).

[0112] The bottom layer (121) of the second stacked portion (120) and the bottom layer (131) of the third stacked portion (130) are formed of the same metal material as the bottom layer (111) of the first stacked portion (110). The bottom layer (111) of the first stacked portion (110) is also continuously formed on the inner sidewall (122) of the second stacked portion (120) and the inner sidewall (132) of the third stacked portion (120). When the first metal (210) and the second metal (230) are stacked to form a conductive contact needle, the first metal (210) constituting the bottom layer (111) of the conductive contact needle (100) is disposed between the second metal (230) of the first stacked portion (110) and the second metal (230) of the second stacked portion (120). The first metal (210) extends vertically from the lower surface to the upper surface of the conductive contact needle (100). Furthermore, a first metal (210) constituting the bottommost layer (111) of the conductive contact pin (100) is disposed between the second metal (230) of the first stacked portion (110) and the second metal (230) of the third stacked portion (130). The first metal (210) extends vertically from the lower surface to the upper surface of the conductive contact pin (100).

[0113] Since the bottom layer (111) of the first laminate (110), the bottom layer (121) of the second laminate (120), the top layer (123) of the second laminate (120), the bottom layer (131) of the third laminate (130) and the top layer (133) of the third laminate (120) are formed of the same material as each other, the second laminate (120) and the third laminate (130) can be prevented from being peeled off from the first laminate (110) and damaged.

[0114] In addition, by forming a plurality of metal layers with a “└” side shape on the first end (102) side of the first stacked portion (110), damage due to shearing can be prevented on the first end (102) side. By forming a plurality of metal layers with a “┘” side shape on the second end (103) side of the first stacked portion (110), damage due to shearing can be prevented on the second end (103) side.

[0115] On the other hand, the first stacked portion (110) may be configured first, and then the second stacked portion (120) and the third stacked portion (130) may be formed. In this case, the inner sidewall of the first stacked portion (110) becomes a seed layer for deposition growth when the second stacked portion (120) or the third stacked portion is formed.

[0116] Next, refer to Figures 16(a)-16(e). Figure 16(a) is a plan view of the conductive contact pin (100), Figure 16(b) is a cross-sectional view along A-A' of Figure 16(a), Figure 16(c) is a cross-sectional view along B-B' of Figure 16(a), Figure 16(d) is a cross-sectional view along C-C' of Figure 16(a), and Figure 16(e) is a cross-sectional view along D-D' of Figure 16(a).

[0117] The process of removing the mold (10) and the seed layer (20) is performed after the previous steps. If the mold (10) is made of anodized film material, the mold (10) is removed using a solution that selectively reacts with the anodized film material. If the seed layer (20) is made of copper (Cu) material, the seed layer (20) is removed using a solution that selectively reacts with copper (Cu).

[0118] FIG17(a) is a perspective view of the front side, i.e. the first end (102), of the conductive contact pin (100) according to a preferred second embodiment of the present invention, and FIG17(b) is a perspective view of the back side, i.e. the second end (103), of the conductive contact pin (100) according to a preferred second embodiment of the present invention.

[0119] The second laminate portion (120) of the first end (102) is not arranged on the same horizontal line as the metal layer constituting the first laminate portion (110), and the third laminate portion (130) of the second end (103) is not arranged on the same horizontal line as the metal layer constituting it.

[0120] Referring to Figures 17(a) and 17(b), the first lamination section (110) is a structure formed by laminating thirteen metal layers in the order of first metal (210), second metal (230), first metal (210), second metal (230), first metal (210), second metal (230), first metal (210), second metal (230), first metal (210), second metal (230), first metal (210), second metal (230), and first metal (210). The second lamination section (120) and the third lamination section (130) are structures formed by laminating five metal layers in the order of first metal (210), second metal (230), first metal (210), second metal (230), and first metal (210) from the bottom surface to the top surface. The second metal (230) constituting the second laminate (120) and the second metal (230) constituting the third laminate (130) may be different from each other. For example, the second metal (230) constituting the second laminate (120) may be copper (Cu), and the second metal (230) constituting the third laminate (130) may be copper (Cu) and gold (Au).

[0121] Although the thickness of the metal layers constituting the first laminated portion (110) is shown as the same in the figure, the thickness of the metal layers constituting the first laminated portion (110) may be different from each other. In the metal layers constituting the first laminated portion (110), any one metal layer may be formed with a thickness greater than the other metal layers, or with a thinner thickness. Furthermore, although the thickness of the metal layers constituting the second laminated portion (110) and the third laminated portion (130) is shown as the same in the figure, the thickness of the metal layers constituting the second laminated portion (120) and the third laminated portion (130) may be different from each other. In the metal layers constituting the first laminated portion (110), any one metal layer may be formed with a thickness greater than the other metal layers, or with a thinner thickness.

[0122] The first end (102) and the second end (103) of the conductive contact pin (100) may be formed in a shape that decreases in cross-sectional area towards their ends. However, even in this case, the stacked structure of the second stacked portion (120) and the third stacked portion (130) is maintained as is.

[0123] Third Embodiment Next, a third embodiment of the present invention will be described. However, the embodiments described below focus on characteristic constituent elements compared with the first embodiment, and descriptions of constituent elements that are the same as or similar to those in the first embodiment are omitted as much as possible.

[0124] Hereinafter, a conductive contact pin (100) according to a preferred third embodiment of the present invention will be described with reference to FIG18(a), FIG18(b) to FIG26(a) and FIG26(b). FIG18(a) is a front perspective view of the conductive contact pin (100) according to a preferred third embodiment of the present invention, FIG18(b) is a rear perspective view of the conductive contact pin (100) according to a preferred third embodiment of the present invention, FIG19(a)-FIG19(e) to FIG25(a)-FIG25(e) are diagrams showing a method of manufacturing the conductive contact pin (100) according to a preferred third embodiment of the present invention, FIG26(a) is a perspective view of the first end of the conductive contact pin (100) according to a preferred third embodiment of the present invention, and FIG26(b) is a perspective view of the second end of the conductive contact pin (100) according to a preferred third embodiment of the present invention.

[0125] The second stacked portion (120) and the third stacked portion (130) according to the third embodiment include: an inner extension portion (310) that extends inward to the inner side of the conductive contact needle (100) along the length direction of the conductive contact needle (100); and an outer extension portion (320) that extends outward to the outer side of the conductive contact needle (100) along the length direction of the conductive contact needle (100) and protrudes to the end side of the conductive contact needle (100).

[0126] More specifically, the second stacked portion (120) includes: a first inner extension portion (310a) extending inward to the inside of the conductive contact needle (100) along the length direction of the conductive contact needle (100); and a first outer extension portion (320a) connected to the first inner extension portion (310a), extending outward to the outside of the conductive contact needle (100) along the length direction of the conductive contact needle (100) and protruding to the end side of the conductive contact needle (100). In addition, the third stacked portion (130) includes: a second inner extension portion (310b) extending inward to the inside of the conductive contact needle (100) along the length direction of the conductive contact needle (100); and a second outer extension portion (320b) connected to the second inner extension portion (310b), extending outward to the outside of the conductive contact needle (100) along the length direction of the conductive contact needle (100) and protruding to the end side of the conductive contact needle (100).

[0127] The outer extension (320) of the conductive contact pin (100) has a length of 100 μm to 400 μm. Even if the first end (111) is shortened to a length of 100 μm to 400 μm due to the polishing process, the same cross-sectional structure is achieved. With this configuration, the first end (111) can be polished within a length range of 100 μm to 400 μm for reuse.

[0128] Hereinafter, with reference to FIG19(a)-19(e) to FIG25(a)-25(e), a method for manufacturing a conductive contact pin (100) according to a preferred third embodiment of the present invention will be described.

[0129] Referring to Figures 19(a)-19(e), Figure 19(a) is a plan view of the mold (10) having a first internal space (11) and a third internal space (13), Figure 19(b) is a cross-sectional view of Figure 19(a) along line A-A', Figure 19(c) is a cross-sectional view of Figure 19(a) along line B-B', Figure 19(d) is a cross-sectional view of Figure 19(a) along line C-C', and Figure 19(e) is a cross-sectional view of Figure 19(a) along line D-D'.

[0130] Referring to Figures 19(a)-19(e), a first internal space (11) and a third internal space (13) are formed in the mold (10), and a seed layer (20) is disposed in the lower part of the mold (10).

[0131] In the aspect of manufacturing the conductive contact pin (100) according to a preferred embodiment of the present invention using a mold (10) of anodized film material instead of a photoresist mold, it is possible to achieve a precise and fine shape that was previously limited when implemented as a photoresist mold.

[0132] A seed layer (20) is disposed on the lower surface of the mold (10). The seed layer (20) can be disposed on the lower surface of the mold (10) before the first internal space (11) and the third internal space (13) are formed in the mold (10). On the other hand, the operability of the mold (10) can be improved by forming a support substrate (not shown) at the lower part of the mold (10). Alternatively, in this case, the seed layer (20) can also be formed on the upper surface of the support substrate (not shown) and the mold (10) with the first internal space (11) and the third internal space (13) formed can be attached to the support substrate (not shown) for use. The seed layer (20) can be formed of copper (Cu) material and can be formed by deposition method. When the second stacked portion (120) and the third stacked portion (130) are formed by electroplating, the seed layer (20) is used to improve the plating quality of the second stacked portion (120) and the third stacked portion (130).

[0133] The first internal space (11) and the third internal space (13) can be formed simultaneously by wet etching of the mold (10) made of anodized film material. For this purpose, a photoresist can be disposed on the upper surface of the mold (10) and patterned thereon. Then, the anodized film in the patterned and opened area reacts with the etching solution to form the first internal space (11) and the third internal space (13). Specifically, before forming the first internal space (11) and the third internal space (13), a photosensitive material can be disposed on the upper surface of the mold (10) and then an exposure process and a development process can be performed. The photosensitive material can form an open area by the exposure process and the development process, and at least a portion of it is patterned and removed. The mold (10) made of anodized film material performs an etching process by removing the open area of ​​the photosensitive material using a patterning process, and removes the anodized film at the position corresponding to the internal space (11) using an etching solution, thereby simultaneously forming the first internal space (11) and the third internal space (13).

[0134] Next, referring to Figures 20(a)-20(e), Figure 20(a) is a plan view of the mold (10) in which the second lamination part (120) and the third lamination part (130) are formed in the first internal space (11) and the third internal space (13), Figure 20(b) is a cross-sectional view along A-A' of Figure 20(a), Figure 20(c) is a cross-sectional view along B-B' of Figure 20(a), Figure 20(d) is a cross-sectional view along C-C' of Figure 20(a), and Figure 20(e) is a cross-sectional view along D-D' of Figure 20(a).

[0135] The step of performing an electroplating process in the first internal space (11) and the third internal space (13) of the mold (10) to form the second stacked portion (120) and the third stacked portion (130) is performed. Multiple electroplating processes are performed to deposit multiple metal layers in the thickness direction of the conductive contact pin (100) to form the second stacked portion (120) and the third stacked portion (130). The second layer (120) is configured by laminating at least two or more metals selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Ph), or palladium-cobalt (PdCo) alloys, palladium-nickel (PdNi) alloys or nickel-phosphorus (NiP) alloys, nickel-manganese (NiMn), nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloys, copper (Cu), silver (Ag), and gold (Au). For example, a first metal (210) made of palladium-cobalt (PdCo) alloy and a second metal (230) made of copper (Cu) can be alternately laminated to form the second layer. Here, the first metal (210) can improve the wear resistance of the first end (102) and the second end (103) of the conductive contact needle (100), and the second metal (230) can improve the conductivity of the first end (102) and the second end (103) of the conductive contact needle (100). In this way, compared with the case where the end is only made of the first metal (210), the current allowable capacity of the conductive contact needle (100) can be increased.

[0136] When the plating process is completed, a planarization process can be performed. The metal protruding to the upper surface of the mold (10) is removed and planarized by a chemical mechanical polishing (CMP) process.

[0137] Next, refer to Figures 21(a)-21(e). Figure 21(a) is a plan view of the mold (10) with a portion of the mold (10) removed to form the second internal space (12). Figure 21(b) is a cross-sectional view along A-A' of Figure 21(a). Figure 21(c) is a cross-sectional view along B-B' of Figure 21(a). Figure 21(d) is a cross-sectional view along C-C' of Figure 21(a). Figure 21(e) is a cross-sectional view along D-D' of Figure 21(a).

[0138] A process for removing a portion of the mold (10) is performed. A portion of the mold (10) is removed to form a second internal space (12) in the mold (10). Specifically, an exposure process and a development process are performed after a photosensitive material is disposed on the upper surface of the mold (10). The photosensitive material can form an opening area by the exposure process and the development process, and at least a portion of it is patterned and removed. An etching process is performed by removing the opening area of ​​the photosensitive material using a patterning process, and a portion of the mold (10) is removed using an etching solution to form the second internal space (12).

[0139] The second internal space (12) is formed in a shape that surrounds at least a portion of the second laminated portion (120) and the third laminated portion (130).

[0140] Next, refer to Figures 22(a)-22(e). Figure 22(a) is a plan view of the mold (10) that forms the first layer (110) in the second internal space (12). Figure 22(b) is a cross-sectional view along A-A' of Figure 22(a). Figure 22(c) is a cross-sectional view along B-B' of Figure 22(a). Figure 22(d) is a cross-sectional view along C-C' of Figure 22(a). Figure 22(e) is a cross-sectional view along D-D' of Figure 22(a).

[0141] Perform the step of forming the first laminated portion (110). The first laminated portion (110) is formed in the second internal space (12) formed in the previous step using an electroplating process.

[0142] The first laminated portion (110) is integrated with the second laminated portion (120) and the third laminated portion (130) manufactured in the previous steps. As explained above, the second laminated portion (120) is exposed in at least a portion of the side surface of the second interior space (12), and the first laminated portion (110) is integrated with the second laminated portion (120) in that portion of the side surface. In addition, the third laminated portion (130) is exposed in at least a portion of the side surface of the second interior space (12), and the first laminated portion (110) is integrated with the third laminated portion (130) in that portion of the side surface.

[0143] The first laminated portion (110) is configured by laminating at least two or more metals selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Palladium) or alloys thereof, or palladium-cobalt (PdCo) alloys, palladium-nickel (PdNi) alloys or nickel-phosphorus (NiP) alloys, nickel-manganese (NiMn), nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloys, copper (Cu), silver (Ag), and gold (Au). For example, a first metal (210) made of palladium-cobalt (PdCo) alloy and a second metal (230) made of copper (Cu) may be alternately laminated. Here, the first metal (210) can improve the elastic deformation of the main body (101) of the conductive contact needle (100), and the second metal (230) can improve the conductivity of the main body (101) of the conductive contact needle (100).

[0144] Figures 23(a) and 23(b) are enlarged views of the dashed lines (Z1, Z2) in Figures 22(a)-22(e). Figures 23(a) and 23(b) are diagrams showing more specifically the formation structure of the metal layer according to the plating process of Figures 22(a)-22(e). For ease of explanation, the "└" and "┘" formation structures of the metal layer shown in Figures 23(a), 23(b), 24, and 26(a) and 26(b) will be omitted in other figures of the third embodiment.

[0145] Since the first stacked portion (110) is formed after the second stacked portion (120) and the third stacked portion (130) are configured, the seed layer (20) at the bottom, the inner sidewall (122) of the second stacked portion (120) and the inner sidewall (132) of the third stacked portion (130) are seed functional layers grown by plating when the first stacked portion (110) is formed by plating. Therefore, the lowest layer (111) of the first stacked portion (110) is also continuously formed on the inner sidewall (122) of the second stacked portion (120) and the inner sidewall (132) of the third stacked portion (130). The lowest layer (111) of the first lamination (110) has a first end-side vertical portion (111a) that extends vertically along the inner sidewall (122) of the second lamination (120) and a second end-side vertical portion (111b) that extends vertically along the inner sidewall (132) of the third lamination (130).

[0146] The bottom layer (111) of the first laminate (110), the bottom layer (121) of the second laminate (120), and the bottom layer (131) of the third laminate (130) are not formed to have the same thickness, but the bottom layer (111) of the first laminate (110), the bottom layer (121) of the second laminate (120), and the third laminate (130) are formed to be made of the same material.

[0147] After forming the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a) and the second end side vertical portion (111b), if a subsequent plating process is performed, the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a) and the second end side vertical portion (111b) is a seed layer for plating growth. Therefore, the metal layer disposed on the upper surface of the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a) and the second end side vertical portion (111b) has a "└" side pattern on the first end (102) side and a "┘" side pattern on the second end (103) side. If the subsequent plating process is performed, a plurality of metal layers with a “└” side shape are formed on the first end (102) side of the first stacked portion (110) and constitute the first stacked portion (110).

[0148] The bottom layer (121) of the second stacked portion (120) and the bottom layer (131) of the third stacked portion (130) are formed of the same metal material as the bottom layer (111) of the first stacked portion (110). The bottom layer (111) of the first stacked portion (110) is also continuously formed on the inner sidewall (122) of the second stacked portion (120) and the inner sidewall (132) of the third stacked portion (120). When the first metal (210) and the second metal (230) are stacked to form a conductive contact needle, the first metal (210) constituting the bottom layer (111) of the conductive contact needle (100) is disposed between the second metal (230) of the first stacked portion (110) and the second metal (230) of the second stacked portion (120). The first metal (210) extends vertically from the lower surface to the upper surface of the conductive contact needle (100). Furthermore, a first metal (210) constituting the bottommost layer (111) of the conductive contact pin (100) is disposed between the second metal (230) of the first stacked portion (110) and the second metal (230) of the third stacked portion (130). The first metal (210) extends vertically from the lower surface to the upper surface of the conductive contact pin (100).

[0149] Since the bottom layer (111) of the first laminate (110), the bottom layer (121) of the second laminate (120), the top layer (123) of the second laminate (120), the bottom layer (131) of the third laminate (130) and the top layer (133) of the third laminate (120) are formed of the same material as each other, the second laminate (120) and the third laminate (130) can be prevented from being peeled off from the first laminate (110) and damaged.

[0150] In addition, by forming a plurality of metal layers with a “└” side shape on the first end (102) side of the first stacked portion (110), damage due to shearing can be prevented on the first end (102) side. By forming a plurality of metal layers with a “┘” side shape on the second end (103) side of the first stacked portion (110), damage due to shearing can be prevented on the second end (103) side.

[0151] Figure 24 is an enlarged view of the dashed line portion (Z3) of Figure 22(a)-Figure 22(e). Figure 24 is a diagram showing more specifically the formation structure of the metal layer according to the plating process of Figure 22(a)-Figure 22(e).

[0152] As shown in FIG24, the metal layer constituting the first laminated portion (110) is formed in a shape that surrounds the second laminated portion (120). Similarly, the metal layer constituting the first laminated portion (110) is formed in a shape that surrounds the third laminated portion (130).

[0153] Next, refer to Figures 25(a)-25(e). Figure 25(a) is a plan view of the conductive contact pin (100), Figure 25(b) is a cross-sectional view along A-A' of Figure 25(a), Figure 25(c) is a cross-sectional view along B-B' of Figure 25(a), Figure 25(d) is a cross-sectional view along C-C' of Figure 25(a), and Figure 25(e) is a cross-sectional view along D-D' of Figure 16a.

[0154] The process of removing the mold (10) and the seed layer (20) is performed after the previous steps. If the mold (10) is made of anodized film material, the mold (10) is removed using a solution that selectively reacts with the anodized film material. If the seed layer (20) is made of copper (Cu) material, the seed layer (20) is removed using a solution that selectively reacts with copper (Cu).

[0155] FIG26(a) is a perspective view of the front side, i.e. the first end (102), of the conductive contact pin (100) according to a preferred third embodiment of the present invention, and FIG26(b) is a perspective view of the back side, i.e. the second end (103), of the conductive contact pin (100) according to a preferred third embodiment of the present invention.

[0156] The second laminate portion (120) of the first end (102) is not arranged on the same horizontal line as the metal layer constituting the first laminate portion (110), and the third laminate portion (130) of the second end (103) is not arranged on the same horizontal line as the metal layer constituting it.

[0157] Referring to Figures 26(a) and 26(b), the first lamination section (110) is a structure formed by laminating thirteen metal layers in the order of first metal (210), second metal (230), first metal (210), second metal (230), first metal (210), second metal (230), first metal (210), second metal (230), first metal (210), second metal (230), first metal (210), second metal (230), and first metal (210). The second lamination section (120) and the third lamination section (130) are structures formed by laminating five metal layers in the order of first metal (210), second metal (230), first metal (210), second metal (230), and first metal (210) from the bottom surface to the top surface.

[0158] The second stacked portion (120) includes: a first inner extension (310a) extending inward to the inside of the conductive contact needle (100) along the length direction of the conductive contact needle (100); and a first outer extension (320a) connected to the first inner extension (310a), extending outward to the outside of the conductive contact needle (100) along the length direction of the conductive contact needle (100) and protruding to the end side of the conductive contact needle (100). In addition, the third stacked portion (130) includes: a second inner extension (310b) extending inward to the inside of the conductive contact needle (100) along the length direction of the conductive contact needle (100); and a second outer extension (320b) connected to the second inner extension (310b), extending outward to the outside of the conductive contact needle (100) along the length direction of the conductive contact needle (100) and protruding to the end side of the conductive contact needle (100).

[0159] The second laminated portion (120) formed by the first inner extension (310a) and the first outer extension (320a) is formed in a form in which the metal layers constituting the first laminated portion (110) are sequentially surrounded by layers, and the third laminated portion (130) formed by the second inner extension (310b) and the second outer extension (320b) is also formed in a form in which the metal layers constituting the first laminated portion (100) are sequentially surrounded by layers.

[0160] This can improve the bonding strength between the second laminated portion (120), the third laminated portion (130) and the first laminated portion (110), and improve the electrical or physical properties at the first end (102) and the second end (103).

[0161] Fourth Embodiment Next, a fourth embodiment of the present invention will be described. However, the embodiments described below focus on characteristic constituent elements compared with the first embodiment, and descriptions of constituent elements that are the same as or similar to those in the first embodiment are omitted as much as possible.

[0162] Hereinafter, a conductive contact pin (100) according to a preferred fourth embodiment of the present invention will be described with reference to FIG27(a), FIG27(b) to FIG34(a) and FIG34(b). FIG27(a) is a front perspective view of the conductive contact pin (100) according to a preferred fourth embodiment of the present invention, FIG27(b) is a rear perspective view of the conductive contact pin (100) according to a preferred fourth embodiment of the present invention, FIG28(a)-FIG28(d) to FIG33(a)-FIG33(d) are diagrams showing a method of manufacturing the conductive contact pin (100) according to a preferred fourth embodiment of the present invention, FIG34(a) is a perspective view of the first end of the conductive contact pin (100) according to a preferred fourth embodiment of the present invention, and FIG34(b) is a perspective view of the second end of the conductive contact pin (100) according to a preferred fourth embodiment of the present invention.

[0163] The conductive contact pin (100) according to the fourth embodiment includes: a main body (101) including a first stacked portion (110) comprising a plurality of metal stacked layers; and a first end portion (102) including a second stacked portion (120) comprising a plurality of metal stacked layers, wherein at least one metal layer constituting the first stacked portion (110) and at least one metal layer constituting the second stacked portion (120) are not disposed on the same horizontal line.

[0164] In addition, the first laminated portion (110) is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the thickness of the metal layer with high electrical conductivity is greater than the thickness of the metal layer with high wear resistance. The second laminated portion (120) is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the thickness of the metal layer with high wear resistance is greater than the thickness of the metal layer with high electrical conductivity.

[0165] Furthermore, the first laminated portion (110) is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the content of the metal layer with high electrical conductivity is greater than the content of the metal layer with high wear resistance. The second laminated portion (120) is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the content of the metal layer with high wear resistance is greater than the content of the metal layer with high electrical conductivity.

[0166] By constructing the first laminate (110) and the second laminate (120), the physical or electrical properties of the main body (101) and the first end (102) of the conductive contact pin (100) can be made different from each other. This can improve the current carrying capacity of the main body (101) and the wear resistance of the first end (102).

[0167] The conductive contact pin (100) according to the fourth embodiment is manufactured by plating the first stacked portion (110) and the second stacked portion (120) using a mold. Hereinafter, the manufacturing method of the conductive contact pin (100) according to the preferred fourth embodiment of the present invention will be described with reference to Figures 28(a)-28(d) to 33(a)-33(d).

[0168] Referring to Figures 28(a)-28(d), Figure 28(a) is a plan view of the mold (10) having the first internal space (11), Figure 28(b) is a cross-sectional view of Figure 28(a) along line A-A', Figure 28(c) is a cross-sectional view of Figure 28(a) along line B-B', and Figure 28(d) is a cross-sectional view of Figure 28(a) along line C-C'.

[0169] Referring to Figures 28(a)-28(d), a first internal space (11) is formed in the mold (10), and a seed layer (20) is disposed in the lower part of the mold (10).

[0170] In the aspect of manufacturing the conductive contact pin (100) according to a preferred embodiment of the present invention using a mold (10) of anodized film material instead of a photoresist mold, it is possible to achieve a precise and fine shape that was previously limited when implemented as a photoresist mold.

[0171] A seed layer (20) is disposed on the lower surface of the mold (10). The seed layer (20) can be disposed on the lower surface of the mold (10) before the first internal space (11) is formed in the mold (10). On the other hand, forming a support substrate (not shown) at the lower part of the mold (10) can improve the operability of the mold (10). Alternatively, in this case, the seed layer (20) can also be formed on the upper surface of the support substrate (not shown), and the mold (10) with the first internal space (11) formed can be attached to the support substrate (not shown) for use. The seed layer (20) can be formed of copper (Cu) material and can be formed by deposition method. When the second deposited portion (120) is formed by electroplating, the seed layer (20) is used to improve the plating quality of the second deposited portion (120).

[0172] The first internal space (11) can be formed by wet etching of a mold (10) made of anodized film material. For this purpose, a photoresist can be disposed on the upper surface of the mold (10) and patterned thereon. Then, the anodized film in the patterned and opened area reacts with an etching solution to form the first internal space (11). Specifically, before forming the first internal space (11), a photosensitive material can be disposed on the upper surface of the mold (10) and then an exposure process and a development process can be performed. The photosensitive material can form an open area by the exposure process and the development process, and at least a portion of it is patterned and removed. The mold (10) made of anodized film material performs an etching process by removing the open area of ​​the photosensitive material using a patterning process, and removes the anodized film at the position corresponding to the internal space (11) using an etching solution, thereby forming the first internal space (11).

[0173] Next, referring to Figures 29(a)-29(d), Figure 29(a) is a plan view of the mold (10) that forms the second layer (120) in the first internal space (11), Figure 29(b) is a cross-sectional view along A-A' of Figure 29(a), Figure 3c is a cross-sectional view along B-B' of Figure 3a, and Figure 3d is a cross-sectional view along C-C' of Figure 3a.

[0174] The step of performing an electroplating process in the first internal space (11) of the mold (10) to form the second laminated portion (120) is performed. Multiple electroplating processes are performed to deposit multiple metal layers in the thickness direction of the conductive contact pin (100) to form the second laminated portion (120). The second laminated portion (120) is configured by laminating at least two or more metals selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (palladium) or the like, or palladium-cobalt (PdCo) alloy, palladium-nickel (PdNi) alloy or nickel-phosphorus (NiP) alloy, nickel-manganese (NiMn), nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloy, copper (Cu), silver (Ag), and gold (Au). For example, a first metal (210) of palladium-cobalt (PdCo) alloy and a second metal (230) of copper (Cu) can be alternately laminated. Here, the first metal (210) can improve the wear resistance of the first end (102) of the conductive contact pin (100), and the second metal (230) can improve the conductivity of the first end (102) of the conductive contact pin (100).

[0175] The first layer (110) can be formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the thickness of the metal layer with high electrical conductivity is greater than the thickness of the metal layer with high wear resistance. Alternatively, the first layer (110) can be formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the content of the metal layer with high electrical conductivity is greater than the content of the metal layer with high wear resistance.

[0176] When the plating process is completed, a planarization process can be performed. The metal protruding to the upper surface of the mold (10) is removed and planarized by a chemical mechanical polishing (CMP) process.

[0177] Next, refer to Figures 30(a)-30(d), where Figure 30(a) is a plan view of the mold (10) with a portion of the mold (10) removed to form the second internal space (12), Figure 30(b) is a cross-sectional view along A-A' of Figure 30(a), Figure 30(c) is a cross-sectional view along B-B' of Figure 30(a), and Figure 30(d) is a cross-sectional view along C-C' of Figure 30(a).

[0178] A process for removing a portion of the mold (10) is performed. A portion of the mold (10) is removed to form a second internal space (12) in the mold (10). Specifically, an exposure process and a development process are performed after a photosensitive material is disposed on the upper surface of the mold (10). The photosensitive material can form an opening area by the exposure process and the development process, and at least a portion of it is patterned and removed. An etching process is performed by removing the opening area of ​​the photosensitive material using a patterning process, and a portion of the mold (10) is removed using an etching solution, thereby forming the second internal space (12).

[0179] The mold (10) is exposed on three sides of the second internal space (12), and the second stacked portion (120) is exposed on one side.

[0180] Next, refer to Figures 31(a)-31(d). Figure 31(a) is a plan view of the mold (10) that forms the first layer (110) in the second internal space (12). Figure 31(b) is a cross-sectional view along A-A' of Figure 31(a). Figure 31(c) is a cross-sectional view along B-B' of Figure 31(a). And Figure 31(d) is a cross-sectional view along C-C' of Figure 31(a).

[0181] Perform the step of forming the first laminated portion (110). The first laminated portion (110) is formed in the second internal space (12) formed in the previous step using an electroplating process.

[0182] The first laminated portion (110) is integrated with the second laminated portion (120) made in the previous step. As explained above, the second laminated portion (120) is exposed in one side of the second interior space (12), and the first laminated portion (110) and the second laminated portion (120) are integrated in that side.

[0183] The first laminated portion (110) is configured by laminating at least two or more metals selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Palladium) or alloys thereof, or palladium-cobalt (PdCo) alloys, palladium-nickel (PdNi) alloys or nickel-phosphorus (NiP) alloys, nickel-manganese (NiMn), nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloys, copper (Cu), silver (Ag), and gold (Au). For example, a first metal (210) made of palladium-cobalt (PdCo) alloy and a second metal (230) made of copper (Cu) may be alternately laminated. Here, the first metal (210) can improve the elastic deformation of the main body (101) of the conductive contact needle (100), and the second metal (230) can improve the conductivity of the main body (101) of the conductive contact needle (100).

[0184] The second lamination section (120) is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the thickness of the metal layer with high wear resistance is greater than the thickness of the metal layer with high electrical conductivity, or the second lamination section (120) is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the content of the metal layer with high wear resistance is greater than the content of the metal layer with high electrical conductivity.

[0185] FIG32 is an enlarged view of the dashed line portion (Z) of FIG31(a)-FIG31(d). FIG32 is a diagram showing more specifically the formation structure of the metal layer according to the plating process of FIG31(a)-FIG31(d). For ease of explanation, the “└” formation structure of the metal layer shown in FIG32 and FIG34(a) and FIG34(b) will be omitted in the other figures of the fourth embodiment.

[0186] Since the first stacked portion (110) is formed after the second stacked portion (120) is disposed, the seed layer (20) at the bottom and the inner sidewall (122) of the second stacked portion (120) are seed functional layers grown by plating when the first stacked portion (110) is formed by plating. Therefore, the lowest layer (111) of the first stacked portion (110) has a first end side vertical portion (111a), and the first end side vertical portion (111a) is also continuously formed on the inner sidewall (122) of the second stacked portion (120) and extends in the vertical direction along the inner sidewall (122) of the second stacked portion (120). The bottom layer (111) of the first laminate (110) is not formed to the same thickness as the bottom layer (121) of the second laminate (120), but the bottom layer (111) of the first laminate (110) and the bottom layer (121) of the second laminate (120) are formed to the same material.

[0187] After forming the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a), if a subsequent plating process is performed, the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a) is a seed layer for plating growth, and the metal layer disposed on the upper surface of the lowest layer (111) of the first stacked portion (110) including the first end side vertical portion (111a) has a "└" side pattern on the first end (102) side. If a subsequent plating process is performed, a plurality of metal layers having a "└" side pattern are formed on the first end (102) side of the first stacked portion (110) and constitute the first stacked portion (110).

[0188] The bottom layer (121) of the second stacked portion (120) is formed of the same metal material as the bottom layer (111) of the first stacked portion (110), and the bottom layer (111) of the first stacked portion (110) is also continuously formed on the inner sidewall (122) of the second stacked portion (120). When the first metal (210) and the second metal (230) are alternately stacked to form a conductive contact needle, the first metal (210) constituting the bottom layer (111) of the conductive contact needle (100) is disposed between the second metal (230) of the first stacked portion (110) and the second metal (230) of the second stacked portion (120). The first metal (210) extends vertically from the lower surface to the upper surface of the conductive contact needle (100).

[0189] Since the bottom layer (111) of the first laminate (110), the bottom layer (121) of the second laminate (120), the top layer (123) of the second laminate (120), the middle layer (125) of the second laminate (120) and the vertical portion (111a) of the first end side are formed of the same material, the second laminate (120) can be prevented from being peeled off from the first laminate (110) and damaged.

[0190] In addition, by forming a plurality of metal layers with a “└” side shape on the first end (102) side of the first stacked portion (110), damage due to shearing can be prevented on the first end (102) side.

[0191] On the other hand, the first stacked portion (110) may be configured first, and then the second stacked portion (120) may be formed. In this case, the inner sidewall of the first stacked portion (110) becomes a seed layer for deposition growth when the second stacked portion (120) is formed.

[0192] Next, refer to Figure 33(a) to Figure 33(d), where Figure 33(a) is a plan view of the conductive contact pin (100), Figure 33(b) is a cross-sectional view of Figure 33(a) along line A-A', Figure 33(c) is a cross-sectional view of Figure 33(a) along line B-B', and Figure 33(d) is a cross-sectional view of Figure 33(a) along line C-C'.

[0193] The process of removing the mold (10) and the seed layer (20) is performed after the previous steps. If the mold (10) is made of anodized film material, the mold (10) is removed using a solution that selectively reacts with the anodized film material. If the seed layer (20) is made of copper (Cu) material, the seed layer (20) is removed using a solution that selectively reacts with copper (Cu).

[0194] FIG34(a) is a perspective view of the front side, i.e. the first end (102), of the conductive contact pin (100) according to a preferred fourth embodiment of the present invention, and FIG34(b) is a perspective view of the back side, i.e. the second end (103), of the conductive contact pin (100) according to a preferred fourth embodiment of the present invention.

[0195] The difference lies in the following aspects: the metal layer of the second end (103) is arranged continuously on the same horizontal line as the metal layer of the first layer (110) constituting the main body (101), while the second layer (120) of the first end (102) is arranged not on the same horizontal line as the metal layer constituting the first layer (110).

[0196] Referring to Figures 34(a) and 34(b), the number of metal layers in the first stacked portion (110) and the second stacked portion (120) is the same in the following aspects: the second stacked portion (120) is a structure formed by stacking five metal layers in sequence from the lower surface to the upper surface in the order of first metal (210), second metal (230), first metal (210), second metal (230), and first metal (210), and the first stacked portion (110) is also a structure formed by stacking five metal layers in sequence from the lower surface to the upper surface in the order of first metal (210), second metal (230), first metal (210), second metal (230), and first metal (210). However, the thickness of the metal layer with high electrical conductivity in the first stacked portion (110) is greater than the thickness of the metal layer with high wear resistance, and the second stacked portion (120) has a structure in which the thickness of the metal layer with high wear resistance is greater than the thickness of the metal layer with high electrical conductivity. This allows the content of a wear-resistant metal at the first end (102) to be higher than that in the main body (101), and the content of a highly conductive metal in the main body (101) to be higher than that in the first end (102). Therefore, a conductive contact needle (100) that further increases the allowable current capacity and improves wear resistance can be provided.

[0197] On the other hand, as a variation of the fourth embodiment, the third laminate portion (130) of the second end (103) can be configured differently from the first laminate portion (110). For example, in order to prevent electric arc, the third laminate portion (130) of the second end (103) can be formed in such a way that the thickness of the metal layer with high electrical conductivity is greater than the thickness of the metal layer with high wear resistance.

[0198] In order to further improve the current carrying capacity on the surface of the conductive contact pin (100) according to the various embodiments described above, an additional gold (Au) plating film may be formed. In this case, the gold (Au) plating film may not be formed at the first end (102).

[0199] As described above, although the present invention has been described with reference to preferred embodiments, those skilled in the art can make various modifications or variations to the present invention without departing from the spirit and field of the present invention as described in the following claims. [Simplified Explanation of the Diagram]

[0030] FIG1A is a front perspective view of a conductive contact pin according to a preferred first embodiment of the present invention. FIG1B is a rear perspective view of a conductive contact pin according to a preferred first embodiment of the present invention. FIG2(a)-FIG.2(d) to FIG7(a)-FIG.7(d) are diagrams illustrating a method of manufacturing a conductive contact pin according to a preferred first embodiment of the present invention. FIG8(a) is a perspective view of a first end of a conductive contact pin according to a preferred first embodiment of the present invention. FIG8(a) is a perspective view of a second end of a conductive contact pin according to a preferred first embodiment of the present invention. FIG9(a) is a front perspective view of a conductive contact pin according to a preferred second embodiment of the present invention. FIG9(b) is a rear perspective view of a conductive contact pin according to a preferred second embodiment of the present invention. FIG10(a)-FIG.10(e) to FIG16(a)-FIG.16(e) are diagrams illustrating a method of manufacturing a conductive contact pin according to a preferred second embodiment of the present invention. FIG17(a) is a perspective view of a first end of a conductive contact pin according to a preferred second embodiment of the present invention. Figure 17(b) is a perspective view of the second end of the conductive contact pin according to a preferred second embodiment of the present invention. Figure 18(a) is a front perspective view of the conductive contact pin according to a preferred third embodiment of the present invention. Figure 18(b) is a rear perspective view of the conductive contact pin according to a preferred third embodiment of the present invention. Figures 19(a)-19(e) to 25(a)-25(e) are diagrams illustrating a method of manufacturing the conductive contact pin according to a preferred third embodiment of the present invention. Figure 26(a) is a perspective view of the first end of the conductive contact pin according to a preferred third embodiment of the present invention. Figure 26(b) is a perspective view of the second end of the conductive contact pin according to a preferred third embodiment of the present invention. Figure 27(a) is a front perspective view of the conductive contact pin according to a preferred fourth embodiment of the present invention. Figure 27(b) is a rear perspective view of the conductive contact pin according to a preferred fourth embodiment of the present invention. Figures 28(a)-28(d) to 33(a)-33(d) are diagrams illustrating a method of manufacturing a conductive contact pin (100) according to a preferred fourth embodiment of the present invention. Figure 34(a) is a perspective view of the first end of the conductive contact pin according to a preferred fourth embodiment of the present invention. Figure 34(b) is a perspective view of the second end of the conductive contact pin according to a preferred fourth embodiment of the present invention.

Claims

1. A conductive contact pin, comprising: The main body includes a first laminated portion with multiple metal laminates; and a first end portion includes a second laminated portion with multiple metal laminates. At least one metal layer constituting the first laminated portion and at least one metal layer constituting the second laminated portion are not arranged on the same horizontal line. The lowest layer of the first laminated portion includes a first end-side vertical portion. The first end-side vertical portion is also continuously formed on the inner sidewall of the second laminated portion and extends vertically along the inner sidewall of the second laminated portion. Multiple metal layers with a "└" side shape are formed on the first end side of the first laminated portion and constitute the first laminated portion.

2. The conductive contact pin as claimed in claim 1, wherein the number of stacked layers of the metal layer constituting the second stacked portion is different from the number of stacked layers of the metal layer constituting the first stacked portion.

3. The conductive contact pin as claimed in claim 1, wherein the number of stacked layers of the metal layer constituting the second stacked portion is less than the number of stacked layers of the metal layer constituting the first stacked portion.

4. The conductive contact pin as claimed in claim 1, wherein the first stacked portion and the second stacked portion are formed by alternating stacking of a first metal and a second metal, wherein the number of alternating stacked layers of the first metal and the second metal in the first stacked portion and the second stacked portion are different from each other.

5. The conductive contact pin as claimed in claim 4, wherein the first metal is formed of a metal selected from: rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Ph), or an alloy thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, or a nickel-phosphorus (NiP) alloy, a nickel-manganese (NiMn), a nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy, and the second metal is formed of a metal selected from copper (Cu), silver (Ag), gold (Au), or an alloy thereof.

6. The conductive contact pin as claimed in claim 1, wherein the lowest layer of the second stacked portion is formed of the same metal material as the lowest layer of the first stacked portion, and the lowest layer of the first stacked portion is also continuously formed on the inner sidewall of the second stacked portion.

7. The conductive contact pin as claimed in claim 1, wherein a first metal constituting the lowest layer of the conductive contact pin is disposed between the second metal of the first stacked portion and the second metal of the second stacked portion, and the first metal extends vertically from the lower surface to the upper surface of the conductive contact pin.

8. The conductive contact pin as claimed in claim 1, comprising: The third layer is disposed at the second end of the conductive contact pin.

9. The conductive contact pin as claimed in claim 8, wherein at least one metal layer constituting the first stacked portion and at least one metal layer constituting the third stacked portion are not arranged on the same horizontal line.

10. The conductive contact pin as claimed in claim 8, wherein the number of stacked layers of the third stacked portion is different from at least one of the number of stacked layers of the first stacked portion and the number of stacked layers of the second stacked portion.

11. The conductive contact pin as claimed in claim 8, wherein the number of stacked layers in the third stacked portion is the same as the number of stacked layers in the second stacked portion.

12. The conductive contact pin as claimed in claim 1, wherein the first stacked portion is formed by stacking a metal layer with relatively high conductivity and a metal layer with relatively high wear resistance, and the thickness of the metal layer with high conductivity is greater than the thickness of the metal layer with high wear resistance, and the second stacked portion is formed by stacking a metal layer with relatively high conductivity and a metal layer with relatively high wear resistance, and the thickness of the metal layer with high wear resistance is greater than the thickness of the metal layer with high conductivity.

13. The conductive contact pin as claimed in claim 1, wherein the first stacked portion is formed by stacking a metal layer with relatively high conductivity and a metal layer with relatively high wear resistance, and the content of the metal layer with high conductivity is greater than the content of the metal layer with high wear resistance, and the second stacked portion is formed by stacking a metal layer with relatively high conductivity and a metal layer with relatively high wear resistance, and the content of the metal layer with high wear resistance is greater than the content of the metal layer with high conductivity.

14. A conductive contact pin, comprising: The first end portion; and the main body portion, including a first laminated portion comprising a plurality of metal layers arranged in a stacked configuration; wherein a plurality of metal layers having a “└” side profile are formed on the first end portion side of the first laminated portion and constitute the first laminated portion.

15. The conductive contact pin as claimed in claim 14, wherein after the lowest layer of the first stacked portion including the first end-side vertical portion is formed, if a subsequent plating process is performed, the lowest layer of the first stacked portion including the first end-side vertical portion is a seed functional layer grown by plating, and therefore the metal layer disposed on the upper surface of the lowest layer of the first stacked portion including the first end-side vertical portion has a "└" shaped side pattern on the first end side.

16. The conductive contact pin as claimed in claim 14, wherein the first end is configured in a shape that decreases in cross-sectional area towards its end.

17. The conductive contact pin as claimed in claim 14, wherein in the metal layers constituting the first stacked portion, the thickness of any one metal layer is thicker or thinner than the thickness of the other metal layers.

18. A method for manufacturing a conductive contact needle, wherein the conductive contact needle comprises: The main body includes a first laminated portion with multiple metal laminates; and a first end portion includes a second laminated portion with multiple metal laminates. The first laminated portion and the second laminated portion are formed by plating using a mold. The lowest layer of the first laminated portion includes a first end-side vertical portion. The first end-side vertical portion is also continuously formed on the inner sidewall of the second laminated portion and extends vertically along the inner sidewall of the second laminated portion. Multiple metal layers with a "└" side shape are formed on the first end side of the first laminated portion and constitute the first laminated portion.

19. A method for manufacturing a conductive contact pin as claimed in claim 18, wherein the mold is formed from an anodized film material.

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