Apparatus for generating magnetic fields during semiconductor processing

Abstract

A physical vapor deposition (PVD) chamber for depositing materials includes means for influencing ion trajectory during deposition in an edge region of a substrate. The means includes a reflector assembly and a plurality of permanent magnets. The reflector assembly surrounds a substrate support and is configured to reflect heat to the substrate during material reflow. The plurality of permanent magnets are embedded in the reflector assembly and are configured to influence ion trajectory on the edge region of the substrate during the deposition process. The plurality of permanent magnets are symmetrically spaced around the reflector assembly.

Description

[Technical Field]

[0001] The embodiments of this principle are generally related to semiconductor manufacturing. [Previous Technology]

[0002] During semiconductor manufacturing, layers of different materials are etched or deposited on a substrate to form a semiconductor structure. Typically, it is highly desirable to deposit layers in an even or uniform manner to allow for fine control over the semiconductor process. However, the inventors have observed that material deposition in a plasma vapor deposition (PVD) chamber is often not highly uniform due to poor ion trapping of the substrate during the deposition process.

[0003] Therefore, the inventors provide an apparatus that helps to capture ions on a substrate during a PVD process, thereby producing excellent deposition performance. [Summary of the Invention]

[0004] This invention provides an apparatus for influencing ion trapping on a substrate during a PVD process.

[0005] In some embodiments, an apparatus for influencing ion trajectories on a substrate may include: an annular assembly that is completely surrounding a periphery of the substrate during processing in a plasma vapor deposition (PVD) chamber, and a plurality of discrete permanent magnets embedded in the annular assembly and symmetrically spaced around the annular assembly, the plurality of discrete permanent magnets being configured to influence ion trajectories at an edge region of the substrate and to influence deposition uniformity in the edge region of the substrate during plasma deposition.

[0006] In some embodiments, the device may further include, wherein the annular assembly is a lamp reflector that reflects heat during processing in the PVD chamber to recirculate deposited material, wherein one or more of the plurality of discrete permanent magnets are held in the annular assembly by a plug inserted below one or more of the plurality of discrete permanent magnets, wherein the plug includes a gas relief hole, wherein one or more of the plurality of discrete permanent magnets are held in the annular assembly by a captive holding device configured to at least partially block a magnet insertion hole below one or more of the plurality of discrete permanent magnets, further including one or more vent holes in the annular assembly, wherein the one or more vent holes are drawn in the PVD chamber. During the down phase, gas is allowed to pass around the plurality of discrete permanent magnets, wherein the plurality of discrete permanent magnets are cylindrical magnets inserted into vertical holes in the annular assembly, wherein the plurality of discrete permanent magnets are oriented south-pole upward, wherein the plurality of discrete permanent magnets have a diameter of about 0.5 inches to about 0.75 inches and a height of about 2.0 inches to about 3.0 inches, wherein the plurality of discrete permanent magnets have a maximum energy product of at least 45 MGOe, wherein the annular assembly has cooling channels configured to cool the annular assembly and the plurality of discrete permanent magnets, wherein the plurality of discrete permanent magnets are configured to provide a B-field increase of about 15 Gauss at the edge region of the substrate, wherein the plurality of discrete permanent magnets are configured to provide vertical ion tracks to the substrate at the edge region of the substrate, and / or wherein the plurality of discrete permanent magnets comprises at least 16 magnets.

[0007] In some embodiments, an apparatus for depositing copper onto a substrate may include: a plasma vapor deposition (PVD) chamber having a processing space and a reflow capability, the processing space for depositing copper on the substrate and the reflow capability for reflowing the copper deposited on the substrate; a substrate support configured to hold the substrate within the PVD chamber for processing; a reflector assembly surrounding the substrate support and for reflecting heat to the substrate during the reflow of the copper deposited on the substrate; and a plurality of permanent magnets embedded in the reflector assembly, the plurality of permanent magnets configured to influence ion trajectories on an edge region of the substrate during the copper deposition process, the plurality of permanent magnets being symmetrically spaced around the reflector assembly.

[0008] In some embodiments, the device may further include one or more vents in the reflector assembly, wherein the one or more vents are configured to allow gas to pass around the plurality of permanent magnets during evacuation to a vacuum state in the PVD chamber, wherein the plurality of permanent magnets are inserted into vertical holes in the reflector assembly and have a diameter of about 0.5 inches to about 0.75 inches and a height of about 2.0 inches to about 3.0 inches, wherein the reflector assembly has cooling channels configured to cool the reflector assembly and the plurality of permanent magnets to about 65 degrees Celsius, and / or wherein the plurality of permanent magnets are configured in the edge region of the substrate to provide vertical ion tracks to the substrate.

[0009] In some embodiments, an apparatus for influencing ion trajectories on a substrate may include: a thermal reflector assembly completely surrounding a periphery of the substrate during processing in a plasma vapor deposition (PVD) chamber, wherein the thermal reflector assembly is configured to reflow deposited material on the substrate, and wherein the thermal reflector assembly includes cooling channels configured to cool the thermal reflector assembly, and a plurality of discrete permanent magnets inserted into the substrate. In a vertical aperture of a thermal reflector assembly, a plurality of discrete permanent magnets are symmetrically spaced around the reflector assembly, wherein the plurality of discrete permanent magnets are configured to influence ion trajectory at an edge region of the substrate and deposition uniformity in the edge region of the substrate during plasma deposition, wherein the plurality of discrete permanent magnets have a diameter of about 0.5 inches to about 0.75 inches and a height of about 2.0 inches to about 3.0 inches, and wherein the plurality of discrete permanent magnets have a maximum energy product of at least 45 MGOe.

[0010] Other and further embodiments are disclosed below.

Implementation Method

[0024] Ion trapping at the wafer plane varies with magnetic field strength and orientation. Devices based on this principle provide wafer-level hardware composed of permanent magnets that achieve a stronger normal magnetic field line at the wafer plane. In some semiconductor chamber designs, the magnetic field strength and orientation at the wafer plane are controlled by an electromagnet located above the wafer plane outside the processing chamber. Because the electromagnet is located above the wafer plane, its normal B-field orientation is limited, especially at the wafer edges, leading to ion loss in these edge regions. Devices based on this principle address the lack of wafer-level normal B-field orientation and provide an efficient way to achieve a uniform and stronger normal magnetic field line across the entire wafer plane, which helps reduce ion loss.

[0025] This principle-based device utilizes a vacuum space within a processing chamber near the wafer edge to add a plurality of discrete permanent magnets at the wafer level, thereby creating a strong normal magnetic field at the wafer edge. This device provides a cost-effective enhancement to existing chamber setups, resulting in better plasma vapor deposition (PVD) film properties due to increased ion flux. This principle-based device also offers the advantage of providing tuning knobs to improve PVD film properties by customizing the device and discrete permanent magnet parameters to enhance ion trapping (by adjusting step coverage and deposition rate). The device is also economical, requiring no electrical or power integration and no modifications to the chamber software for operation. Furthermore, the device provides greater adjustability for other electromagnets outside the processing chamber used in conjunction with it to further improve film deposition quality.

[0026] In view 100 of FIG1, a processing chamber 102 of a device incorporating this principle is illustrated. The processing chamber 102 has a substrate support 104 that allows a substrate 106 to be held during processing. The processing chamber 102 includes a processing space 108 and a non-processing space 110, in which the substrate 106 is processed, and in which the non-processing space 110 is in fluid contact with a vacuum pump 112 and the processing space 108. The vacuum pump 112 allows the processing space 108 to be pumped down to operate in a vacuum during processing. The substrate support 104 may include an electrode 116 connected to an RF power supply 114 for biasing the substrate 106 during processing. The processing chamber 102 may also include an upper electrode 118 electrically connected to a plasma DC power supply 120. The processing chamber 102 may also include a controller 138. The controller 138 controls the operation of the processing chamber 102 by direct control or, alternatively, by controlling a computer (or controller) associated with the processing chamber 102.

[0027] In operation, the controller 138 can collect data and feedback from relevant devices and systems to optimize the performance of the processing chamber 102. The controller 138 typically includes a central processing unit (CPU) 140, memory 142, and support circuitry 144. The CPU 140 can be any form of general-purpose computer processor that can be used in an industrial environment. The support circuitry 144 is typically coupled to the CPU 140 and may include cache, clock circuitry, input / output subsystems, power supply, and the like. Software programs (as described below) can be stored in memory 142, and when the CPU 140 executes the software programs, the software programs turn the CPU 140 into a dedicated computer (controller 138). The software programs can also be stored and / or executed by a second controller (not shown) located at a remote end of the processing chamber 102.

[0028] Memory 142 is in the form of a computer-readable storage medium containing instructions that, when executed by CPU 140, facilitate the operation of semiconductor processes and devices. The instructions in memory 142 are in the form of a program product, such as a program that performs a deposition method and a similar program that includes device performance parameters to appropriately adjust the deposition. The program code may conform to any of a variety of different programming languages. In one instance, this disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program product defines the functionality of a program type (including the methods described in this specification). Exemplary computer-readable storage media include, but are not limited to: non-writable storage media on which information can be permanently stored (such as read-only memory devices within a computer, such as CD-ROM drives that can read CD-ROM discs, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory); and writable storage media on which information can be changed (such as floppy disks within a disk drive or hard disk drive, or any type of solid-state random access semiconductor memory). When these computer-readable storage media carry computer-readable instructions pointing to the functions described in this case, these computer-readable storage media are in the manner described in this principle.

[0029] The magnet assembly 122 can also be used to control the plasma 124 generated in the processing chamber 102. The collimator 126, electrically connected to the collimator DC power supply 128, can also be used to influence the ion trajectory. The first external electromagnet assembly 130 can be used in conjunction with the collimator 126 to additionally influence the ion trajectory. The second external electromagnet assembly 132 can also be used closer to the substrate support 104 to further influence the ion trajectory. In some cases, the external permanent magnet assembly 134 can be disposed between the first external magnet assembly and the second external electromagnet assembly 132. Although multiple components are used to influence the ion trajectory, the inventors have observed that the deposition thickness near the substrate edge is generally thinner than that at the center of the substrate because the ion trajectory is smaller than the top surface perpendicular to (normal to) the substrate. The inventors have found that if a plurality of permanent magnets 136 are placed symmetrically around the substrate support 104 (e.g., in a vacuum space), the film inhomogeneity is reduced, especially at the edge region 1002 of the substrate 106, as shown in view 1000 of FIG. 10.

[0030] In some embodiments, the permanent magnet 136 is configured with its south pole up orientation. A magnetic field 1004 (B field) impinges on the substrate 106 at the edge region 1002. As the distance 1006 between the magnet and the substrate 106 increases, the magnetic field 1004 of the permanent magnet 136 decreases significantly, thereby reducing the effect of the magnetic field 1004 on the central portion 1008 of the substrate 106. The magnetic field strength of the permanent magnet can be adjusted by using different magnetic materials with different magnetic properties to increase or decrease the magnetic field, decreasing or increasing the volume of the magnetic material to decrease or increase the magnetic field strength respectively, and / or decreasing or increasing the number of permanent magnets to decrease or increase the number and placement of the magnetic field respectively. Since film uniformity is highly desirable, symmetrically placing the permanent magnets around the substrate helps to improve deposition uniformity. In some embodiments, the permanent magnet may be formed of a magnetic material having a maximum energy product of at least 45 MGOe (mega (millions) Gauss-Oersted) or N45. Permanent magnets 136 may be symmetrically spaced around substrate 106 in an annular assembly to hold the permanent magnets in place. In some embodiments, 16 cylindrical permanent magnets may be used to surround substrate 106. Since the volume of the magnetic material affects the strength of the permanent magnet, in some embodiments, the permanent magnet may have a diameter of about 0.5 inches to about 0.75 inches and a height of about 2.0 inches to about 3.0 inches. In some embodiments, the permanent magnet has a diameter of about 0.5 inches and a length of about 2.0 inches.

[0031] As shown in line plot 1100A of Figure 11, the Gaussian level plot 1104 above the radius 1102 of the substrate represents a first Gaussian level 1106 above the substrate in the absence of a plurality of permanent magnets, versus a second Gaussian level 1108 above the substrate in the presence of a plurality of permanent magnets surrounding the substrate. The plurality of permanent magnets raise the Gaussian level near the edge region of the substrate by about 10 to about 20 Gauss or more. The increase in the Gaussian level is influenced by the distance from the magnet to the substrate, the number of magnets, the strength of the magnet material and / or the total volume of the magnet material, and these parameters can be adjusted accordingly. The inventors have also found that, as shown in line plot 1100B of Figure 11 (where the x-axis 1110 is the radial distance from the center of the substrate and the y-axis 1112 is the delta angle compared to the normal of the ions impacting the top surface of the substrate), the impact angle of the ions extends further towards the edge of the substrate from the normal 1116. By incorporating this device, the ion impact angles near the substrate edge are more normalized during deposition, increasing deposition uniformity. The more normalized the impact ion angles, the more ions are captured on the substrate surface. Conversely, fewer normalized impact ion angles result in greater ion loss, thus reducing deposition. As the B-field becomes stronger and more normalized, the ion trajectory also becomes more normalized, and the deposition quality is improved by increasing the deposition thickness through higher ion capture at the substrate surface.

[0032] As shown in view 200 of FIG2, some processing chambers may have reflector assemblies 204 used during the deposition reflow process. In order to heat the bottom surface of the substrate 106, the substrate 106 is raised on pin 202 such that the bottom surface is exposed above the reflective portion 206 of the reflector assembly 204. By using the reflector assembly 204 to heat the underside of the substrate 106 (by reflecting the radiant energy from the heating lamp in the processing chamber), the reflow temperature of the deposited material is more easily maintained. As described above, the NU% of the substrate 106 is reduced by surrounding the substrate 106 with a plurality of permanent magnets 136. Since the reflector assembly 204 surrounds the substrate during processing, the reflector assembly can also be used as a ring assembly to symmetrically hold the plurality of permanent magnets 136 around the substrate 106, as shown in view 300 of FIG3.

[0033] A top-down view 400A of FIG4 illustrates a reflector assembly 402 having permanent magnets 136 symmetrically spaced around the reflector assembly 402. The number of permanent magnets 136 can be varied to adjust the magnetic field on the edge region of the substrate. A cross-sectional view 400B of FIG4 shows a section 406 at line AA of the top-down view 400A. As shown in the top-down view, the permanent magnets 136 can be mounted in holes protruding through the reflector assembly 402. In some embodiments, if holes are added to the reflector assembly 402 (as opposed to using existing gas through-holes), blind holes can be used to hold the magnets at the top (holes drilled from the bottom up to line 404). Alternatively, the holding devices for the bottom of the magnets discussed below can also be used to hold the magnets at the top. Typically, the reflector assembly is used in a stationary device with a top-up orientation, and the holding devices for the top of the magnets are optional because gravity usually holds the magnets in place. In the top-to-bottom view 500A of Figure 5, the permanent magnet is partially obscured by the overhang portion 504 of the reflector assembly 502. Cross-sectional view 500B of Figure 5 shows section 506 at line BB of the top-to-bottom view 500A. The overhang portion 504 helps to hold the permanent magnet 136 at the top. The permanent magnet 136 can move slightly upwards but cannot move past the overhang portion 504, thus eliminating the need for a holding device for the top of the magnet.

[0034] In cross-sectional view 600 of FIG. 6, the reflector assembly 502 has a plug 602 inserted below the permanent magnet 136, which acts as a holding device to prevent the permanent magnet 136 from falling out of the bottom of the reflector assembly 502. In some embodiments, the reflector assembly 502 may also have a fluid conduction conduit to connect the processing space 108 and the non-processing space 110 (see FIG. 1) during vacuum evacuation of the processing chamber 102. When vacuum evacuation occurs, any gas around the permanent magnet 136 will cause back pressure attempting to eject the permanent magnet 136. In some embodiments, a lateral venting device 604 may be provided on the outside of the reflector assembly to allow the removal of any gas and prevent any back pressure from building up during chamber evacuation. In cross-sectional view 700 of FIG. 7, in some embodiments, a vertical venting device 702 is provided through the plug 602 to allow gas to escape from around the permanent magnet 136 during vacuum evacuation of the processing chamber 102. In some embodiments, to maximize the size of the permanent magnet, holding devices such as captive washer 802 and retaining screw 804 can be used to hold the permanent magnet in place within the reflector assembly 502, as shown in view 800 of FIG8. The captive washer 802 does not need to completely cover the bottom of the permanent magnet, but is sufficient to cover the bottom to prevent the permanent magnet from shifting during processing.

[0035] The inventors have also discovered the additional benefit of using some cooled reflector assembly. When the temperature in the processing chamber exceeds, for example, the curing temperature (e.g., exceeding approximately 100 degrees Celsius), the permanent magnet will lose its magnetic properties. In some embodiments shown in view 900 of FIG. 9, the reflector assembly 902 has an optional flange 916, which helps to mount the reflector assembly 902 in the processing chamber 102 and helps to mount the fluid cooling channel 904. The fluid cooling channel 904 has an inlet connector 908 for incoming fluid 912 and an outlet connector 910 for outgoing fluid 914. The outgoing fluid 914 typically enters a heat exchanger (not shown), which cools the fluid and returns it as incoming fluid 912. When the permanent magnet 136 is mounted in the reflector assembly 902, the reflector assembly 902 is cooled, and the permanent magnet is also cooled. The permanent magnet 136 is cooled by removing heat from the magnet during substrate processing to maintain its operation at maximum magnetic field strength. In some embodiments, the reflector assembly 902 is cooled to about 65 degrees Celsius or lower to optimize the magnetic field strength of the permanent magnet.

[0036] Embodiments according to this principle can be implemented in hardware, firmware, software, or any combination thereof. Embodiments can also be implemented using instructions stored on one or more computer-readable media, which can be read and executed by one or more processors. The computer-readable media may include any mechanism for storing or transmitting information in a form readable by a machine, such as a computing platform or a "virtual machine" running on one or more computing platforms. For example, the computer-readable media may include any suitable form of volatile or non-volatile memory. In some embodiments, the computer-readable media may include non-transitory computer-readable media.

[0037] Although the foregoing description is an embodiment of the present principle, other and further embodiments disclosed herein may be designed without departing from the basic scope of the present principle. [Simplified Explanation of the Diagram]

[0011] Embodiments of this principle have been briefly summarized above and are discussed in more detail below, which can be understood by referring to the exemplary embodiments of this principle illustrated in the accompanying drawings. However, the accompanying drawings only illustrate typical embodiments of this principle, and since this principle allows for other equivalent embodiments, the accompanying drawings should not be considered as a limitation on the scope of this disclosure.

[0012] Figure 1 shows a cross-sectional view of a processing chamber according to some embodiments of this principle.

[0013] Figure 2 illustrates a cross-sectional view of a processing chamber with a reflector assembly according to some embodiments of this principle.

[0014] Figure 3 illustrates a cross-sectional view of a processing chamber with an improved reflector assembly according to some embodiments of this principle.

[0015] Figure 4 illustrates a top-down view and cross-sectional view of a reflector assembly according to some embodiments of this principle.

[0016] Figure 5 illustrates a top-down view and cross-sectional view of a reflector assembly according to some embodiments of this principle.

[0017] Figure 6 illustrates a cross-sectional view of a reflector assembly with lateral gas relief according to some embodiments of this principle.

[0018] Figure 7 illustrates a cross-sectional view of a reflector assembly with a vertical exhaust device according to some embodiments of this principle.

[0019] FIG8 illustrates a cross-sectional view of a reflector assembly with a tethered washer holding device according to some embodiments of the present principle.

[0020] Figure 9 illustrates a bottom view of a reflector assembly with fluid cooling according to some embodiments of this principle.

[0021] FIG10 illustrates a cross-sectional view and a top-down view of a substrate according to some embodiments of the present principle.

[0022] Figure 11 illustrates a graph showing the effect of a magnetic field on ion trajectories according to some embodiments of this principle.

[0023] For ease of understanding, the same numerical designations are used to represent the same elements in the figures where possible. For clarity, the figures are not drawn to scale and may be simplified. Elements and features in one embodiment may be advantageously used in other embodiments without further description. [Biomaterial Storage]

[0039] Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None.

Claims

1. An apparatus for influencing ion tracks on a substrate, comprising: A ring assembly, configured in a physical vapor deposition (PVD) chamber, completely surrounding a periphery of the substrate; a plurality of discrete permanent magnets, one or more of which are each embedded in the ring assembly with a vertical pole orientation and symmetrically spaced around the ring assembly in one or more insertion holes, wherein the plurality of discrete permanent magnets are configured to form magnetic field lines between a south pole and a north pole of each of the plurality of discrete permanent magnets; an annular groove formed in the ring assembly, above and outside the one or more insertion holes; and an annular overhang formed above the annular groove of the ring assembly and above a portion of each of the one or more insertion holes, wherein the annular overhang is configured to hold the plurality of discrete permanent magnets at a top by restricting upward movement of the plurality of discrete permanent magnets.

2. The device as claimed in claim 1, wherein the annular assembly is a reflector having an inclined inner portion configured to reflect radiant energy toward a bottom surface of the substrate.

3. The device as claimed in claim 1, wherein one or more of the plurality of discrete permanent magnets are held in the annular assembly by means of a plug inserted into one or more of the plurality of discrete permanent magnets and below the annular overhang portion.

4. The device as claimed in claim 3, wherein the plug includes a vent.

5. The device as claimed in claim 1, wherein one or more of the plurality of discrete permanent magnets are held in the annular assembly by a captive holding device configured to at least partially block the one or more insertion holes located at a bottom.

6. The device as claimed in claim 1, further comprising one or more vents in the annular assembly, wherein the one or more vents, configured to allow gas to pass through the one or more of the plurality of discrete permanent magnets during a drawdown of the PVD chamber.

7. The device as claimed in claim 1, wherein one or more of the plurality of discrete permanent magnets is a cylindrical magnet inserted into one or more insertion holes in the annular assembly.

8. The device as claimed in claim 7, wherein one or more of the plurality of discrete permanent magnets are oriented south-pole upward.

9. The device as claimed in claim 7, wherein one or more of the plurality of discrete permanent magnets have a diameter of about 0.5 inches to about 0.75 inches and a height of about 2.0 inches to about 3.0 inches.

10. The device as claimed in claim 1, wherein one or more of the plurality of discrete permanent magnets have a maximum energy product of at least 45 MGOe.

11. The device as claimed in claim 1, wherein the annular assembly has cooling channels configured to cool the annular assembly and one or more of the plurality of discrete permanent magnets, wherein the cooling channels are separated from one or more of the plurality of discrete permanent magnets.

12. The device as claimed in claim 1, wherein one or more of the plurality of discrete permanent magnets are configured to provide an increase of about 15 Gauss in B-field at an edge region of the substrate.

13. The device as claimed in claim 1, wherein one or more of the plurality of discrete permanent magnets are provided with magnetic field lines intersecting the substrate between the respective magnetic poles of each of the plurality of discrete permanent magnets to generate vertical ion trajectories on the substrate in an edge region of the substrate.

14. The device as claimed in claim 1, wherein one or more of the plurality of discrete permanent magnets comprises at least 16 magnets.

15. An apparatus for depositing copper onto a substrate, comprising: A physical vapor deposition (PVD) chamber having a processing space configured to deposit copper on a substrate and configured to reflow the deposited copper on the substrate using a radiation energy reflector assembly having an annular shape; and a substrate support configured to hold the substrate in the PVD chamber for processing. The radiant energy reflector assembly surrounds the substrate support and is configured to guide radiant energy toward a bottom surface of the substrate; and a plurality of permanent magnets, one or more of which are each embedded in the radiant energy reflector assembly with a vertical polarity orientation, the one or more of which are configured to form a magnetic field line between a south pole and a north pole of each of the one or more of which are symmetrically spaced around the radiant energy reflector assembly in one or more of their respective insertion holes; an annular groove formed in the radiant energy reflector assembly and above and outside the one or more insertion holes; and an annular overhang formed above the annular groove of the radiant energy reflector assembly and above a portion of each of the one or more insertion holes, wherein the annular overhang is configured to hold the one or more of ...

16. The device as claimed in claim 15, further comprising one or more vents in the radiant energy reflector assembly, wherein the one or more vents allow gas to pass through the one or more of the plurality of permanent magnets during evacuation to a vacuum state in the PVD chamber.

17. The device as claimed in claim 15, wherein one or more of the plurality of permanent magnets have a diameter of about 0.5 inches to about 0.75 inches and a height of about 2.0 inches to about 3.0 inches.

18. The device as claimed in claim 15, wherein the radiant energy reflector assembly has cooling channels spaced apart from one or more of the plurality of permanent magnets, the cooling channels being configured to cool the radiant energy reflector assembly and one or more of the plurality of permanent magnets to about 65 degrees Celsius.

19. The device as claimed in claim 15, wherein one or more of the plurality of permanent magnets are provided with magnetic field lines disposed between the respective magnetic poles of the plurality of permanent magnets such that the magnetic field lines intersect a top surface of the substrate to generate vertical ion tracks to the substrate in an edge region of the substrate.

20. An apparatus for influencing ion tracks on a substrate, comprising: A radiation energy reflector assembly is disposed within a physical vapor deposition (PVD) chamber completely surrounding a periphery of a substrate support. The radiation energy reflector assembly is positioned within the PVD chamber to direct radiation energy toward a bottom surface of the substrate. The radiation energy reflector assembly includes cooling channels configured to cool the assembly and spaced apart from one or more of a plurality of discrete permanent magnets. Each of the plurality of discrete permanent magnets is inserted into one or more insertion holes of the radiation energy reflector assembly with a vertical polarity orientation, and is symmetrically spaced around the radiation energy reflector assembly in the insertion holes. Each of the plurality of discrete permanent magnets has a diameter of about 0.5 inches to about 0.75 inches and a height of about 2.0 inches to about 3.0 inches, and has a maximum energy product of at least 45 MGOe. An annular groove is formed in the radiant energy reflector assembly and above and outside the one or more insertion holes; and an annular overhang is formed above the annular groove of the radiant energy reflector assembly and above a portion of each of the one or more insertion holes, wherein the annular overhang is configured to hold one or more of the plurality of discrete permanent magnets at a top by restricting upward movement of the one or more of the plurality of discrete permanent magnets.

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