Manufacturing apparatus for a masking device, recording medium, and manufacturing method of a masking device.

Abstract

The shielding device of the present invention may include a frame and a shield. The frame includes a first side and a second side facing each other in a first direction with an opening between them, and a third side and a fourth side facing each other in a second direction intersecting the first direction with an opening between them. The shield includes an end fixed to the first side and the second side. The manufacturing apparatus may include: a pressing mechanism that presses the first side and the second side in the direction toward the opening; a displacement measuring mechanism that measures the amount of deformation of the first side and the second side in the first direction; and a fixing device that fixes the shield to the first side and the second side. The pressing mechanism may include five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the first side, and five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the second side.

Description

[Technical Field]

[0001] The embodiments of the present invention relate to a masking device manufacturing apparatus, a recording medium, a masking device manufacturing method, and a masking device. [Previous Technology]

[0002] Organic devices, such as organic EL (Electroluminescent) display devices, have attracted much attention. As a method for forming elements of organic devices, a method is known to attach the material constituting the element to a substrate by vapor deposition. For example, firstly, a substrate with a first electrode formed according to a pattern corresponding to the element is prepared. Then, a vapor deposition step is performed using a masking apparatus. The masking apparatus includes a mask with through-holes and a frame supporting the mask. By attaching organic material through the through-holes of the mask onto the first electrode, an organic layer is formed on the first electrode.

[0003] The frame includes a first side and a second side to which the end of the shield is fixed. The first side and the second side face each other in a first direction through an opening. The frame supports the shield while applying tension to it in the first direction. This suppresses deflection of the shield. [Prior Art Documents] [Patent Documents]

[0004] [Patent Document 1] International Publication No. 2019 / 049600 [Summary of the Invention]

[0005] [The problem the invention aims to solve]

[0006] When the mask is fixed to the first and second sides in a state where the first and second sides of the frame are deformed in the direction toward the opening, tension is applied to the mask based on the elastic restoring force of the first and second sides. In order to precisely adjust the tension on the mask, it is required to precisely adjust the amount of deformation of the first and second sides.

[0007] As a method to reduce the manufacturing cost of organic devices, increasing the size of the substrate is considered. If the substrate is larger, the mask and the frame also become larger. If the frame is larger, the difficulty of adjusting the deformation of the first and second sides increases. [Technical Device for Solving the Problem]

[0008] In a manufacturing apparatus for a masking device according to one embodiment of the present invention, the masking device may include a frame and a mask. The frame includes a first side and a second side facing each other in a first direction with an opening between them, and a third side and a fourth side facing each other in a second direction intersecting the first direction with the opening between them. The mask includes an end fixed to the first side and the second side. The manufacturing apparatus may include: a pressing mechanism that presses the first side and the second side in a direction toward the opening; a displacement measuring mechanism that measures the deformation of the first side and the second side in the first direction; and a fixing device that fixes the mask to the first side and the second side. The pressing mechanism may include five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the first side, and five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the second side. [Effects of the Invention]

[0009] According to an embodiment of the present invention, the deformation of the first and second sides of the frame can be appropriately adjusted.

Implementation Method

[0011] In this specification and the accompanying drawings, unless otherwise specified, the terms "substrate", "base material", "plate", "sheet", "film" and other terms that refer to the material that forms the basis of a certain structure should not be distinguished from each other simply based on the difference in name.

[0012] In this specification and the accompanying drawings, unless otherwise specified, terms such as “parallel”, “orthogonal”, or values ​​of length and angle are not limited to their strict meaning, but are interpreted to the extent that the same function can be expected.

[0013] In this specification and accompanying drawings, unless otherwise specified, the terms "above" or "below," "upper side" or "lower side," or "above" or "below" of a component or region on other components or regions also include cases where a component is directly connected to other components. Furthermore, it also includes cases where other components are involved between a component and another component, that is, cases where they are indirectly connected. Also, unless otherwise specified, the terms "above," "upper side," "above," or "below," "lower side," "below" can be reversed in terms of vertical direction.

[0014] In this specification and the accompanying drawings, unless otherwise specified, the same or similar symbols are sometimes used to mark the same parts or parts with the same function, and repeated descriptions are omitted. Furthermore, for ease of explanation, the dimensional ratios in the drawings may sometimes differ from the actual ratios, and some components may sometimes be omitted from the drawings.

[0015] Unless otherwise specified in this specification and accompanying drawings, one embodiment of this specification may be combined with other embodiments within the scope of not creating contradictions. Furthermore, other embodiments may also be combined with each other within the scope of not creating contradictions.

[0016] Unless otherwise specified in this specification and the accompanying drawings, when a method such as a manufacturing method is disclosed with multiple steps, other undisclosed steps may be performed between the disclosed steps. Furthermore, the order of the disclosed steps is arbitrary to the extent that it does not create contradictions.

[0017] In this specification and the accompanying drawings, unless otherwise specified, the numerical range represented by the symbol "~" includes the numerical values ​​placed before and after the symbol "~". For example, the numerical range defined by the expression "34 to 38% by mass" is the same as the numerical range defined by the expression "more than 34% by mass and less than 38% by mass".

[0018] In one embodiment of this specification, an example of a mask used to pattern organic materials or electrodes onto a substrate in a desired pattern during the manufacture of an organic EL display device and a method thereof are described. However, this embodiment is not limited to this application, and can be applied to masks for various purposes. For example, the mask of this embodiment can also be used to form electrodes for devices used to display or project images or videos for virtual reality (VR) or augmented reality (AR). Furthermore, the mask of this embodiment can also be used to form electrodes for display devices other than organic EL display devices, such as electrodes for liquid crystal display devices. Additionally, the mask of this embodiment can also be used to form electrodes for organic devices other than display devices, such as electrodes for pressure sensors.

[0019] The first aspect of the present invention is a manufacturing apparatus for a mask device, the mask device comprising: a frame including a first side and a second side facing each other in a first direction with an opening between them, and a third side and a fourth side facing each other in a second direction intersecting the first direction with the opening between them; and a mask including an end fixed to the first side and the second side; the manufacturing apparatus comprising: a pressing mechanism for pressing the first side and the second side in a direction toward the opening; a displacement measuring mechanism for measuring the deformation of the first side and the second side in the first direction; and a fixing device for fixing the mask to the first side and the second side; the pressing mechanism comprising five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the first side, and five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the second side.

[0020] The second state sample of the present invention is in the manufacturing apparatus of the first state sample. The displacement measuring mechanism may include at least one displacement meter for measuring the deformation of the first side. The displacement meter may include a sensing head that contacts the first side.

[0021] The third state sample of the present invention is manufactured in the manufacturing apparatus of the second state sample, and the displacement gauge can measure the deformation of the first side at a position less than 100 mm away from the pressing device in the second direction.

[0022] The fourth state sample of the present invention is in the manufacturing apparatus of the second state sample or the third state sample. The displacement measuring mechanism may include: five or more displacement gauges that measure the deformation of the first side at a position of 100 mm or less from the pressing device in the second direction; a first auxiliary displacement gauge that measures the deformation of the first side at a position of 200 mm or less from the outer surface of the third side in the second direction; and a second auxiliary displacement gauge that measures the deformation of the first side at a position of 200 mm or less from the outer surface of the fourth side in the second direction.

[0023] The fifth state sample of the present invention is manufactured in the manufacturing apparatus of the fourth state sample, wherein the distance between the first auxiliary displacement meter and the second auxiliary displacement meter in the second direction can be 1300 mm or more.

[0024] The sixth aspect of the present invention is in the manufacturing apparatus of any one of the first aspect to the fifth aspect, wherein the distance in the first direction between the pressing device pressing the first side and the pressing device pressing the second side can be 1300 mm or more.

[0025] The seventh state of the present invention is in the manufacturing apparatus of any one of the first to fifth states described above. The masking device may include N pieces (N is an integer of 2 or more) of the mask arranged along the second direction. The manufacturing apparatus may include a control device for controlling the pressing mechanism. The pressing mechanism presses the first side and the second side in such a way that the difference between the deformation amount and the target deformation amount when each mask is fixed to the first side is less than or equal to a first threshold.

[0026] The eighth embodiment of the present invention is based on the manufacturing apparatus of the seventh embodiment described above. The fixing device can fix the cover to the first side and the second side in sequence from the center of the frame in the second direction. The pressing mechanism for pressing the first side includes: a central group comprising one or two pressing devices; a first group comprising two or more pressing devices located in the second direction between the central group and the third side; and a second group comprising the second... Two or more pressing devices located in the direction between the central group and the fourth side; the pressing devices of the central group apply a first pressing force (1) to the first side when fixing the first cover to the frame, and the pressing devices of the central group apply a first pressing force (U) to the first side when fixing the U-th cover (U is an integer greater than 1 and less than N) to the frame, and the ratio of the first pressing force (U) to the first pressing force (1) is 1.05 or more.

[0027] The ninth aspect of the present invention is based on the manufacturing apparatus of the seventh aspect described above. The fixing device can fix the cover to the first side and the second side in sequence from the center of the frame in the second direction. The pressing mechanism for pressing the first side includes: a central group comprising one or two pressing devices; a first group comprising two or more pressing devices located in the second direction between the central group and the third side; and a second group comprising pressing devices located in the second direction between the central group and the third side. Two or more pressing devices between the fourth side and the first side; the pressing device belonging to the second group and closest to the fourth side applies a first pressing force (1) to the first side when fixing the first cover to the frame; the pressing device belonging to the second group and closest to the fourth side applies a first pressing force (U) to the first side when fixing the U-th cover (U is an integer greater than 1 and less than N) to the frame; the ratio of the first pressing force (U) to the first pressing force (1) is 1.05 or more.

[0028] The tenth aspect of the present invention is in the manufacturing apparatus of the eighth or ninth aspect described above, wherein the control device controls the pressing mechanism in such a manner that the following formula holds: U≧N / 2

[0029] The 11-1th state of the present invention is a program that enables a computer to function as the control device of the manufacturing apparatus in any of the 7th to 10th states.

[0030] The 11-2 state of the present invention is a recording medium, which is a non-transient recording medium that can be read by a computer, and records the program of the above-mentioned 11-1 state.

[0031] The 12th aspect of the present invention is a method for manufacturing a mask device, comprising: a step of preparing a frame, the frame including a first side and a second side facing each other in a first direction with an opening between them, and a third side and a fourth side facing each other in a second direction intersecting the first direction with the opening between them; an adjustment step of adjusting a first pressing force applied to the first side and the second side by a pressing mechanism in the direction toward the opening; and a fixing step of fixing the end of the mask to the first side and the second side; the pressing mechanism includes five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the first side, and five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the second side.

[0032] The 13th state sample of the present invention is in the manufacturing method of the 12th state sample. The adjustment step can adjust the first pressing force based on information from the displacement measuring mechanism. The displacement measuring mechanism measures the deformation of the first side and the second side in the first direction. The displacement measuring mechanism may include at least one displacement meter for measuring the deformation of the first side. The displacement meter may include a sensing head that contacts the first side.

[0033] The 14th state sample of the present invention is based on the manufacturing method of the 13th state sample above, wherein the displacement gauge can measure the deformation of the first side at a position less than 100 mm away from the pressing device in the second direction.

[0034] The 15th aspect of the present invention is based on the manufacturing method of the 13th or 14th aspect described above. The displacement measuring mechanism may include: five or more displacement gauges that measure the deformation of the first side at a position less than 100 mm away from the pressing device in the second direction; a first auxiliary displacement gauge that measures the deformation of the first side at a position less than 200 mm away from the outer surface of the third side in the second direction; and a second auxiliary displacement gauge that measures the deformation of the first side at a position less than 200 mm away from the outer surface of the fourth side in the second direction.

[0035] In the above-mentioned 15th state sample, the distance between the first auxiliary displacement gauge and the second auxiliary displacement gauge in the second direction may be 1300 mm or more.

[0036] In the above-mentioned 12th to 15th states, the distance in the first direction between the pressing device pressing the first side and the pressing device pressing the second side can be 1300 mm or more.

[0037] The 16th aspect of the present invention is the manufacturing method of any one of the 11th to 15th aspects described above. The masking device may include N pieces (N is an integer greater than 2) of the mask arranged along the second direction. The adjustment step is to adjust the first pressing pressure in such a way that the difference between the deformation amount of the first side when each mask is fixed to the first side and the target deformation amount is less than or equal to a first threshold.

[0038] The 17th aspect of the present invention is based on the manufacturing method of the 16th aspect described above. In the fixing step, the cover can be fixed to the first side and the second side in a sequence further away from the center of the frame in the second direction. The pressing mechanism for pressing the first side includes: a central group comprising one or two pressing devices; a first group comprising two or more pressing devices located between the central group and the third side in the second direction; and a second group comprising the pressing devices of the second side... Two or more pressing devices located in the direction between the central group and the fourth side; the pressing devices of the central group can apply a first pressing force (1) to the first side when the first cover is fixed to the frame, and the pressing devices of the central group can apply a first pressing force (U) to the first side when the U-th cover (U is an integer greater than 1 and less than N) is fixed to the frame, and the ratio of the first pressing force (U) to the first pressing force (1) can be 1.05 or more.

[0039] The 18th aspect of the present invention is based on the manufacturing method of the 16th aspect described above. In the fixing step, the cover can be fixed to the first side and the second side sequentially from the center of the frame in the second direction. The pressing mechanism for pressing the first side may include: a central group comprising one or two pressing devices; a first group comprising two or more pressing devices located between the central group and the third side in the second direction; and a second group comprising devices located between the central group in the second direction. Two or more pressing devices between the fourth side and the above-mentioned pressing device; the pressing device belonging to the second group and closest to the fourth side can apply a first pressing force (1) to the first side when the first piece of the above-mentioned cover is fixed to the frame; the pressing device belonging to the second group and closest to the fourth side can apply a first pressing force (U) to the first side when the U-th piece (U is an integer greater than 1 and less than N) of the above-mentioned cover is fixed to the frame; the ratio of the first pressing force (U) to the first pressing force (1) can be 1.05 or more.

[0040] The 19th state sample of the present invention is derived from the manufacturing method of the 17th or 18th state sample described above. The adjustment step can adjust the first pressing pressure in such a way that the following formula holds true: U≧N / 2

[0041] The 20th aspect of the present invention is a masking device comprising: a frame including a first side and a second side facing each other in a first direction with an opening between them, and a third side and a fourth side facing each other in a second direction intersecting the first direction with the opening between them; and N pieces (N is an integer of 2 or more) of masks, each including an end fixed to the first side and the second side, and arranged along the second direction; wherein the first side and the second side are deformed in the second direction with a final deformation amount in a manner that flexes toward the opening. The removal and reverse adjustment steps are performed alternately. The removal step involves removing the cover from the frame in sequence, starting closer to the center of the frame in the second direction. The reverse adjustment step is performed after the removal step, adjusting the second pressing force applied to the first and second sides by the pressing mechanism in the direction toward the opening, such that the first and second sides are deformed by the final deformation amount in the second direction. In this case, the ratio of the second pressing force (Q) to the second pressing force (N) is 1.05 or more. The pressing mechanism for pressing the first side includes: a central group comprising one or two pressing devices for pressing the first side; a first group comprising two or more pressing devices located between the central group and the third side in the second direction; and a second group comprising two or more pressing devices located between the central group and the fourth side in the second direction. The second pressing force (Q) is the pressing force applied by the pressing device of the central group to the first side after the Q-th piece (Q is an integer greater than 1 and less than N) of the cover is removed from the frame. The second pressing force (N) is the pressing force applied by the pressing device of the central group to the first side after the N-th piece of the cover is removed from the frame.

[0042] The 21st embodiment of the present invention is a masking device comprising: a frame including a first side and a second side facing each other in a first direction with an opening between them, and a third side and a fourth side facing each other in a second direction intersecting the first direction with the opening between them; and N masks (N being an integer of 2 or more) including ends fixed to the first side and the second side, and arranged along the second direction; wherein the first side and the second side are deformed in the second direction with a final deformation amount in a manner that flexes toward the opening. The removal and reverse adjustment steps are performed alternately. The removal step involves removing the cover from the frame in sequence, starting closer to the center of the frame in the second direction. The reverse adjustment step is performed after the removal step, adjusting the second pressing force applied to the first and second sides by the pressing mechanism in the direction toward the opening, such that the first and second sides are deformed by the final deformation amount in the second direction. In this case, the ratio of the second pressing force (Q) to the second pressing force (N) is 1.05 or more. The pressing mechanism for pressing the first side includes: a central group comprising one or two pressing devices for pressing the first side; a first group comprising two or more pressing devices located between the central group and the third side in the second direction; and a second group comprising two or more pressing devices located between the central group and the fourth side in the second direction. The second pressing force (Q) is the pressing force applied to the first side by the pressing device belonging to the second group and closest to the fourth side after the Q-th piece (Q is an integer greater than 1 and less than N) of the cover is removed from the frame. The second pressing force (N) is the pressing force applied to the first side by the pressing device belonging to the second group and closest to the fourth side after the N-th piece of the cover is removed from the frame.

[0043] In the 22nd aspect of the present invention, which is based on the shielding device of the 21st or 22nd aspect described above, the following formula is valid: Q≦N / 2

[0044] The first embodiment of the present invention will be described in detail with reference to the accompanying drawings. Furthermore, the embodiments shown below are examples of embodiments of the present invention, and the present invention should not be interpreted as limited to these embodiments.

[0045] An organic device 100 having elements formed by using a mask will be described. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0046] The organic device 100 includes: a substrate 110 having a first surface 111 and a second surface 112; and a plurality of elements 115, all located on the first surface 111 of the substrate 110. Elements 115 are, for example, pixels. Elements 115 may be arranged along an in-plane direction of the first surface 111. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0047] Element 115 may include a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130. The element formed by using a mask may be either the organic layer 130 or the second electrode 140. The element formed by using a mask is also referred to as a vapor-deposited layer.

[0048] The organic device 100 may have an insulating layer 160 located between two adjacent first electrodes 120 in plan view. The insulating layer 160 may, for example, contain polyimide. The insulating layer 160 may overlap with the edge of the first electrode 120 in plan view.

[0049] The organic device 100 may also be an active matrix type. For example, although not shown, the organic device 100 may also have a switch electrically connected to each of the plurality of elements 115. The switch is, for example, a transistor. The switch can control the ON / OFF (connection / disconnection) of the voltage or current of the corresponding element 115.

[0050] The substrate 110 may be a plate-shaped member with insulating properties. Preferably, the substrate 110 is transparent, allowing light to pass through. As a material for the substrate 110, for example, rigid materials without flexibility such as quartz glass, Pyrex glass, or synthetic quartz sheets, or flexible materials such as resin films, optical resin sheets, or thin glass can be used. Furthermore, the substrate may also be a laminate with barrier layers on one or both sides of the resin film.

[0051] Element 115 is configured to perform certain functions by applying a voltage between the first electrode 120 and the second electrode 140, or by allowing current to flow between the first electrode 120 and the second electrode 140. For example, when element 115 is a pixel of an organic EL display device, element 115 can emit light that constitutes an image.

[0052] The first electrode 120 comprises a conductive material. For example, the first electrode 120 comprises a metal, a conductive metal oxide, or other conductive inorganic materials. The first electrode 120 may also comprise a transparent and conductive metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0053] The organic layer 130 contains organic materials. If current flows through the organic layer 130, the organic layer 130 can perform certain functions. As the organic layer 130, a light-emitting layer that emits light by means of current can be used. The organic layer 130 may also contain organic semiconductor materials. The transmittance, refractive index, and other properties of the organic layer 130 can also be appropriately adjusted.

[0054] As shown in FIG. 1, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may also include a third organic layer contained in the third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0055] When a voltage is applied between the first electrode 120 and the second electrode 140, current flows through the organic layer 130. When the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130, and the light is extracted to the outside from the side of the second electrode 140 or the side of the first electrode 120.

[0056] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, etc.

[0057] The second electrode 140 comprises a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by a masking vapor deposition method. Materials constituting the second electrode 140 may include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), carbon, etc. These materials may be used individually or in combination of two or more. When using two or more materials, a laminate containing each material may be used. Alternatively, alloys containing two or more materials may be used. For example, magnesium alloys such as MgAg, and aluminum alloys such as AlLi, AlCa, and AlMg may be used. MgAg is also referred to as magnesium silver. Magnesium silver is preferred as a material for the second electrode 140. Alkali metal and alkaline earth metal alloys may also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, etc., may also be used.

[0058] The second electrode 140 may be a common electrode. For example, the second electrode 140 of one element 115 may be electrically connected to the second electrode 140 of another element 115.

[0059] The second electrode 140 may be composed of a single layer. For example, the second electrode 140 may also be a layer formed by a vapor deposition step using a mask.

[0060] Alternatively, as shown in FIG1, the second electrode 140 may also include a first layer 140A and a second layer 140B. The first layer 140A may be a layer formed by a vapor deposition step using a first mask. The second layer 140B may be a layer formed by a vapor deposition step using a second mask. In this way, two or more masks can be used to form the second electrode 140. This increases the degree of freedom in the pattern of the second electrode 140 in top view. For example, the organic device 100 may include regions where the second electrode 140 does not exist in top view. Regions where the second electrode 140 does not exist may have higher transmittance than regions where the second electrode 140 exists.

[0061] As shown in Figure 1, the ends of the first layer 140A and the second layer 140B can partially overlap. In this way, the first layer 140A and the second layer 140B can be electrically connected.

[0062] Although not shown in the figure, the second electrode 140 may also include a third layer or other layers. The third layer or other layers may be electrically connected to the first layer 140A and the second layer 140B.

[0063] In the following description, when describing the common structure of the first layer 140A, the second layer 140B, the third layer, etc. in the configuration of the second electrode 140, the term "second electrode 140" and its symbol will be used.

[0064] In the method for manufacturing organic device 100, an organic device group 102 as shown in FIG2 can be fabricated. The organic device group 102 includes two or more organic devices 100. For example, the organic device group 102 may include organic devices 100 arranged in a first direction D1 and a second direction D2. The second direction D2 is a direction intersecting the first direction D1. The second direction D2 may also be orthogonal to the first direction D1. A common substrate 110 can be used for the two or more organic devices 100. For example, the organic device group 102, located on a substrate 110, may include layers such as a first electrode 120, an organic layer 130, and a second electrode 140 constituting the two or more organic devices 100. Organic devices 100 can be obtained by dividing the organic device group 102.

[0065] As described below, the first direction D1 may be the direction in which the mask 50 used to manufacture the organic device 100 extends.

[0066] The size A1 of the organic device 100 in the first direction D1 may be, for example, 10 mm or more, 30 mm or more, or 100 mm or more. Size A1 may be, for example, 200 mm or less, 500 mm or less, or 1000 mm or less. The range of size A1 may be determined by a first group including 10 mm, 30 mm, and 100 mm, and / or a second group including 200 mm, 500 mm, and 1000 mm. The range of size A1 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of size A1 may also be determined by a combination of any two values ​​contained in the first group. The range of size A1 may also be determined by a combination of any two values ​​contained in the second group. For example, size A1 can be 10 mm to 1000 mm, or 10 mm to 500 mm, or 10 mm to 200 mm, or 10 mm to 100 mm, or 10 mm to 30 mm, or 30 mm to 1000 mm, or 30 mm to 500 mm, or 30 mm to 200 mm, or 30 mm to 100 mm, or 100 mm to 1000 mm, or 100 mm to 500 mm, or 100 mm to 200 mm, or 200 mm to 1000 mm, or 200 mm to 500 mm, or 500 mm to 1000 mm.

[0067] The size A2 of the organic device 100 in the second direction D2 may be, for example, 10 mm or more, 20 mm or more, or 50 mm or more. Size A2 may be, for example, less than 100 mm, less than 200 mm, or less than 500 mm. The range of size A2 may be determined by a first group including 10 mm, 20 mm, and 50 mm, and / or a second group including 100 mm, 200 mm, and 500 mm. The range of size A2 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of size A2 may also be determined by a combination of any two values ​​contained in the first group. The range of size A2 may also be determined by a combination of any two values ​​contained in the second group. For example, size A2 can be 10 mm to 500 mm, or 10 mm to 200 mm, or 10 mm to 100 mm, or 10 mm to 50 mm, or 10 mm to 20 mm, or 20 mm to 500 mm, or 20 mm to 200 mm, or 20 mm to 100 mm, or 20 mm to 50 mm, or 50 mm to 500 mm, or 50 mm to 200 mm, or 50 mm to 100 mm, or 100 mm to 500 mm, or 100 mm to 200 mm, or 200 mm to 500 mm.

[0068] The organic device group 102 includes a device region 103 in which a plurality of organic devices 100 are located. The device region 103 has a dimension G12 in the first direction D1 and a dimension G22 in the second direction D2.

[0069] By increasing the size of the substrate 110, the dimensions G12 and G22 of the device region 103 can be increased. This increases the number of organic devices 100 formed on a single substrate 110. Consequently, the manufacturing cost of the organic devices 100 can be reduced.

[0070] The dimension G11 of the substrate 110 in the first direction D1 may be, for example, 1000 mm or more, 1200 mm or more, 1300 mm or more, or 2100 mm or more. The dimension G11 may be, for example, less than 1200 mm, less than 1300 mm, less than 1900 mm, less than 2100 mm, or less than 2300 mm. The range of dimension G11 may be determined by a first group including 1000 mm, 1200 mm, 1300 mm, and 2100 mm, and / or a second group including 1200 mm, 1300 mm, 1900 mm, 2100 mm, and 2300 mm. The range of dimension G11 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of dimension G11 can also be determined by any combination of two values ​​contained in the first group above. The range of dimension G11 can also be determined by any combination of two values ​​contained in the second group above. For example, size G11 can be 1000 mm to 2300 mm, or 1000 mm to 2100 mm, or 1000 mm to 1900 mm, or 1000 mm to 1300 mm, or 1000 mm to 1200 mm, or 1200 mm to 2300 mm, or 1200 mm to 2100 mm, or 1200 mm to 1900 mm, or 1200 mm to 1300 mm, or 1300 mm to 2300 mm, or 1300 mm to 2100 mm, or 1300 mm to 1900 mm, or 1900 mm to 2300 mm, or 1900 mm to 2100 mm, or 2100 mm to 2300 mm.

[0071] The dimension G21 of the substrate 110 in the second direction D2 may be, for example, 1200 mm or more, 1300 mm or more, 1500 mm or more, 2000 mm or more, or 2400 mm or more. The dimension G21 may be, for example, less than 1300 mm, less than 2300 mm, less than 2400 mm, or less than 2600 mm. The range of dimension G21 may be determined by a first group including 1200 mm, 1300 mm, 1500 mm, 2000 mm, and 2400 mm, and / or a second group including 1300 mm, 2300 mm, 2400 mm, and 2600 mm. The range of dimension G21 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of dimension G21 can also be determined by any combination of two values ​​contained in the first group above. The range of dimension G21 can also be determined by any combination of two values ​​contained in the second group above. For example, size G21 can be between 1200 mm and 2600 mm, or between 1200 mm and 2400 mm, or between 1200 mm and 2300 mm, or between 1200 mm and 1500 mm, or between 1200 mm and 1300 mm, or between 1300 mm and 2600 mm, or between 1300 mm and 2400 mm, or between 1300 mm and 2300 mm, or between 1300 mm and 1500 mm, or between 1500 mm and 2600 mm, or between 1500 mm and 2400 mm, or between 1500 mm and 2300 mm, or between 2000 mm and 2300 mm, or between 2300 mm and 2600 mm, or between 2300 mm and 2400 mm. It can be less than 2 mm, or more than 2400 mm and less than 2600 mm.

[0072] A specific numerical range for dimension G11 and a specific numerical range for dimension G21 can be combined. For example, dimension G11 can be 1000 mm to 1200 mm, and dimension G21 can be 1200 mm to 1300 mm. For example, dimension G11 can be 1200 mm to 1300 mm, and dimension G21 can be 2000 mm to 2300 mm. For example, dimension G11 can be 2100 mm to 2300 mm, and dimension G21 can be 2400 mm to 2600 mm.

[0073] Next, the method for forming elements such as the organic layer 130 and the second electrode 140 by vapor deposition will be described. Figure 3 is a diagram of the vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process in which a vapor deposition material is deposited onto a substrate 110.

[0074] As shown in Figure 3, the vapor deposition apparatus 10 may include a vapor deposition source 6, a heater 8, and a shielding device 15. The vapor deposition apparatus 10 may include an exhaust device for creating a vacuum atmosphere inside the apparatus 10. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 contains vapor deposition materials 7 such as organic materials and metallic materials. The heater 8 evaporates the vapor deposition material 7 in a vacuum atmosphere by heating the vapor deposition source 6.

[0075] As shown in FIG. 3, the masking device 15 includes at least one mask 50. The masking device 15 may include a frame 40 supporting the mask 50. The frame 40 includes an opening 45. The mask 50 may also be fixed to the frame 40 in a manner that extends through the opening 45 when viewed from above. The frame 40 may include a first frame surface 401 on which the mask 50 is fixed, and a second frame surface 402 located on the opposite side of the first frame surface 401. The frame 40 supports the mask 50 in a state of being stretched toward its surface direction to suppress the deflection of the mask 50.

[0076] As shown in FIG. 3, the masking device 15 is disposed in the vapor deposition apparatus 10 such that the mask 50 faces the first surface 111 of the substrate 110. The mask 50 includes a plurality of through holes 56 through which the vapor deposition material 7 flying from the vapor deposition source 6 passes. In the following description, the surface of the mask 50 facing the substrate 110 is referred to as the first surface 551. The surface of the mask 50 located on the opposite side of the first surface 551 is referred to as the second surface 552.

[0077] As shown in FIG. 3, the vapor deposition apparatus 10 may include a substrate holder 2 for holding the substrate 110. The substrate holder 2 is movable in the thickness direction of the substrate 110. The substrate holder 2 is also movable in the surface direction of the substrate 110. The substrate holder 2 may be configured to control the tilt of the substrate 110. For example, the substrate holder 2 may include a plurality of clamps mounted on the outer edge of the substrate 110. Each clamp is movable independently in the thickness direction or the surface direction of the substrate 110.

[0078] As shown in Figure 3, the vapor deposition apparatus 10 may include a mask holder 3 for holding the mask device 15. The mask holder 3 is movable.

[0079] The position of the mask 50 relative to the substrate 110 can be adjusted by moving at least one of the substrate holder 2 or the mask holder 3.

[0080] The vapor deposition apparatus 10 may include a cooling plate 4. As shown in FIG3, the cooling plate 4 may be disposed on the second surface 112 side of the substrate 110. The cooling plate 4 may have a flow path for circulating the coolant inside the cooling plate 4. The cooling plate 4 can suppress the temperature rise of the substrate 110 during the vapor deposition step.

[0081] The vapor deposition apparatus 10 may include a magnet 5. As shown in FIG3, the magnet 5 is disposed on the second surface 112 side of the substrate 110. The magnet 5 may also be disposed on the surface of the cooling plate 4 away from the substrate 110. The magnet 5 can pull the mask 50 toward the substrate 110 side by magnetic force. In this way, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. In this way, the generation of shadows during the vapor deposition step can be suppressed. The so-called shadow refers to the phenomenon that the vapor deposition material 7 enters the gap between the mask 50 and the substrate 110, resulting in an uneven shape of the vapor deposition layer. The shape of the vapor deposition layer includes the thickness of the vapor deposition layer, the size of the vapor deposition layer when viewed from above, etc. An electrostatic chuck using electrostatic force can be used to pull the mask 50 toward the substrate 110 side.

[0082] Figure 4 is a top view of the masking device 15 as viewed from the first side 551. The masking device 15 may include a frame 40 and a mask 50 fixed to the frame 40. The frame 40 may have a rectangular outline extending in the first direction D1 and the second direction D2. The frame 40 supports the mask 50 in a state of applying tension to the mask 50 in the first direction D1.

[0083] Frame 40 includes a first side 41, a second side 42, a third side 43, a fourth side 44, and an opening 45. The first side 41 and the second side 42 face each other in a first direction D1, separated by the opening 45. The first side 41 and the second side 42 may extend in a second direction D2. The third side 43 and the fourth side 44 face each other in a second direction D2, separated by the opening 45. The third side 43 and the fourth side 44 may extend in the first direction D1. The first side 41 and the fourth side 44 may be longer than the third side 43 and the fourth side 44. The opening 45 is located between the first side 41 and the side 42, and between the third side 43 and the fourth side 44.

[0084] The first side 41 includes an outer surface 41a and an inner surface 41b. The second side 42 includes an outer surface 42a and an inner surface 42b. The third side 43 includes an outer surface 43a and an inner surface 43b. The fourth side 44 includes an outer surface 44a and an inner surface 44b. The inner surfaces 41b, 42b, 43b, and 44b face the opening 45. The outer surfaces 41a and 42a are located on the opposite side of the inner surfaces 41b and 42b in the first direction D1. The outer surfaces 43a and 44a are located on the opposite side of the inner surfaces 43b and 44b in the second direction D2. The frame 40 includes the angle 46 where the outer surfaces of the two sides intersect.

[0085] The frame 40 has a dimension E11 in the first direction D1. Dimension E11 may be, for example, 1000 mm or more, 1200 mm or more, 1300 mm or more, or 2100 mm or more. Dimension E11 may be, for example, less than 1200 mm, less than 1300 mm, less than 1900 mm, less than 2100 mm, or less than 2300 mm. The range of dimension E11 may be determined by a first group including 1000 mm, 1200 mm, 1300 mm, and 2100 mm, and / or a second group including 1200 mm, 1300 mm, 1900 mm, 2100 mm, and 2300 mm. The range of dimension E11 may be determined by a combination of any value contained in the first group and any value contained in the second group. The range of dimension E11 can also be determined by any combination of two values ​​contained in the first group mentioned above. The range of dimension E11 can also be determined by any combination of two values ​​contained in the second group mentioned above. For example, size E11 can be 1000 mm to 2300 mm, or 1000 mm to 2100 mm, or 1000 mm to 1900 mm, or 1000 mm to 1300 mm, or 1000 mm to 1200 mm, or 1200 mm to 2300 mm, or 1200 mm to 2100 mm, or 1200 mm to 1900 mm, or 1200 mm to 1300 mm, or 1300 mm to 2300 mm, or 1300 mm to 2100 mm, or 1300 mm to 1900 mm, or 1900 mm to 2300 mm, or 1900 mm to 2100 mm, or 2100 mm to 2300 mm.

[0086] The frame 40 has a dimension E21 in the second direction D2. Dimension E21 may be larger than dimension E11. Dimension E21 may, for example, be 1200 mm or more, 1300 mm or more, 1500 mm or more, 2000 mm or more, or 2400 mm or more. Dimension E21 may, for example, be less than 1300 mm, less than 2300 mm, less than 2400 mm, or less than 2600 mm. The range of dimension E21 may be determined by a first group including 1200 mm, 1300 mm, 1500 mm, 2000 mm and 2400 mm, and / or a second group including 1300 mm, 2300 mm, 2400 mm and 2600 mm. The range of dimension E21 can also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of dimension E21 can also be determined by a combination of any two values ​​contained in the first group. The range of dimension E21 can also be determined by a combination of any two values ​​contained in the second group. For example, size E21 can be 1200 mm to 2600 mm, or 1200 mm to 2400 mm, or 1200 mm to 2300 mm, or 1200 mm to 1500 mm, or 1200 mm to 1300 mm, or 1300 mm to 2600 mm, or 1300 mm to 2400 mm, or 1300 mm to 2300 mm, or 1300 mm to 1500 mm, or 1500 mm to 2600 mm, or 1500 mm to 2400 mm, or 1500 mm to 2300 mm, or 2000 mm to 2300 mm, or 2300 mm to 2600 mm, or 2300 mm to 2400 mm. It can be less than 2 mm, or more than 2400 mm and less than 2600 mm.

[0087] The ratio of dimension E21 to dimension E11 may be, for example, 1.1 or more, 1.2 or more, or 1.3 or more. The ratio of dimension E21 to dimension E11 may be, for example, 1.5 or less, 1.7 or less, or 2.0 or less. The range of the ratio of dimension E21 to dimension E11 may be determined by a first group including 1.1, 1.2 and 1.3, and / or a second group including 1.5, 1.7 and 2.0. The range of the ratio of dimension E21 to dimension E11 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the ratio of dimension E21 to dimension E11 may also be determined by a combination of any two values ​​contained in the first group. The ratio of dimension E21 to dimension E11 can also be determined by any combination of any two values ​​contained in the second group mentioned above. For example, the ratio of dimension E21 to dimension E11 can be 1.1 to 2.0 or more, 1.1 to 1.7 or more, 1.1 to 1.5 or more, 1.1 to 1.3 or more, 1.1 to 1.2 or more, 1.2 to 2.0 or more, 1.2 to 1.7 or more, 1.2 to 1.5 or more, 1.2 to 1.3 or more, 1.3 to 2.0 or more, 1.3 to 1.7 or more, 1.3 to 1.5 or more, 1.5 to 2.0 or more, 1.5 to 1.7 or more, 1.7 to 2.0 or more.

[0088] Specific numerical ranges for dimension E11 and dimension E21 can be combined. For example, dimension E11 can be 1000 mm to 1200 mm, and dimension E21 can be 1200 mm to 1300 mm. For example, dimension E11 can be 1200 mm to 1300 mm, and dimension E21 can be 2000 mm to 2300 mm. For example, dimension E11 can be 2100 mm to 2300 mm, and dimension E21 can be 2400 mm to 2600 mm.

[0089] The opening 45 may have a dimension E12 in the first direction D1 and a dimension E22 in the second direction D2. By increasing the size of the frame 40, the size of the opening 45 can be increased. By increasing the size of the opening 45, the area of ​​the mask 50 overlapping with the opening 45 when viewed from above can be increased. This increases the number of organic devices 100 formed on a single substrate 110. This reduces the manufacturing cost of the organic devices 100. "Viewed from above" refers to observing the object along the thickness direction of the mask 50.

[0090] The mask 50 is fixed to the first side 41 and the second side 42. In plan view, the mask 50 includes a pair of end portions 51 fixed to one of the first side 41 and the second side 42, and a middle portion 52 located between the pair of end portions 51. The pair of end portions 51 face each other in a first direction D1. In plan view, the middle portion 52 overlaps with the opening 45. The middle portion 52 includes a group of through holes 53.

[0091] The masking device 15 may have N masks 50 arranged along the second direction. N is an integer of 2 or more. N may be an even number. The masking device 15 shown in FIG4 has 10 masks 50. As described below, N may also be an odd number.

[0092] Mask 50 may include a central mask group 50C, a first mask group 50A, and a second mask group 50B. The central mask group 50C, the first mask group 50A, and the second mask group 50B each include mask 50. As shown in Figure 4, the first mask group 50A is located between the central mask group 50C and the third side 43 in the second direction D2. As shown in Figure 4, the second mask group 50B is located between the central mask group 50C and the fourth side 44 in the second direction D2.

[0093] The central mask group 50C includes one or two masks 50. When N is even, the central mask group 50C may include two masks 50. When N is odd, the central mask group 50C may include one mask 50. The central mask group 50C shown in Figure 4 includes an 11th mask 50A1 and a 12th mask 50A2. The 11th mask 50A1 may be located between the second center line Lc2 and the third side 43. The 12th mask 50A2 may be located between the second center line Lc2 and the fourth side 44. The second center line Lc2 is an imaginary straight line that passes through the center of the opening 45 in the second direction D2 and extends along the first direction D1. Although not shown, the 11th mask 50A1 or the 12th mask 50A2 may also overlap with the second center line Lc2.

[0094] The first mask group 50A includes one or more masks 50. The first mask group 50A may include two or more masks 50. The first mask group 50A shown in Figure 4 includes the 11th mask 50A1, the 12th mask 50A2, the 13th mask 50A3 and the 14th mask 50A4 arranged sequentially in the direction from the third side 43 toward the second center line Lc2.

[0095] The second mask group 50B contains one or more masks 50. The second mask group 50B may contain two or more masks 50. The number of masks 50 contained in the second mask group 50B may be the same as the number of masks 50 contained in the first mask group 50A. The second mask group 50B shown in Figure 4 contains the 21st mask 50B1, the 22nd mask 50B2, the 23rd mask 50B3 and the 24th mask 50B4 arranged sequentially in the direction from the fourth side 44 toward the second center line Lc2.

[0096] Although not shown in the figure, the masking device 15 may have a component that partially overlaps with the mask 50 when viewed from above. The component may be fixed to the side of the frame 40 by passing through the opening 45. The component may be connected to the second surface 552 of the mask 50. One example of the component may include a pair of ends fixed to the third side 43 and the fourth side 44. Another example of the component may include a gap between two adjacent masks 50 located on the second direction D2, fixed to a pair of ends fixed to the first side 41 and the second side 42.

[0097] The frame 40 is described in detail. The first side 41 and the second side 42 can apply tension to the shield 50 in the first direction D1. For example, the first side 41 and the second side 42 can elastically deform in the direction toward the opening 45. For example, the first side 41 can be located further inside than line L11. Line L11 indicates the position of the outer surface 41a of the first side 41 before deformation. The symbol d11 indicates the amount of deformation of the first side 41 in the first direction D1. The closer to the second center line Lc2, the greater the amount of deformation d11. Line L11 can be set as a straight line connecting the corners 46 located at both ends of the first side 41. For example, the second side 42 can be located further inside than line L12. Line L12 indicates the position of the outer surface 42a of the second side 42 before deformation. The symbol d12 indicates the amount of deformation of the second side 42 in the first direction D1. The closer to the second centerline Lc2, the greater the deformation d12. Line L12 can be defined as a straight line connecting the two ends of the second side 42 at the corners 46. "Inner side" refers to the side facing the opening 45. "Outer side" refers to the side away from the opening 45.

[0098] Figure 5 is a top view showing a portion of the first side 41 enlarged. When the first side 41 elastically deforms inward, a restoring force F is generated on the first side 41 towards the outside. Similarly, a restoring force towards the outside is also generated on the second side 42. Therefore, the mask 50 is stretched outward in the first direction D1 by the first side 41 and the second side 42. This can suppress deformation or loosening of the mask 50.

[0099] In the following description, the symbol TXX is sometimes used to represent the tension applied to the mask 50. "XX" can be any character or number. For example, TA4 is used to represent the tension applied to the 14th mask 50A4. For example, TC1 is used to represent the tension applied to the central 1st mask 50C1.

[0100] In the following description, the symbol FXX is sometimes used to represent the restoring force generated on the first edge 41 at the position of the mask 50XX. For example, FA4 is used to represent the restoring force generated on the first edge 41 at the position of the 14th mask 50A4. For example, FC1 is used to represent the restoring force generated on the first edge 41 at the position of the central 1st mask 50C1.

[0101] In the following description, the symbol dXX is sometimes used to represent the deformation amount of the first edge 41 at the position of the mask 50XX. For example, the symbol dA4 is used to represent the deformation amount of the first edge 41 at the position of the 14th mask 50A4. For example, the symbol dC1 is used to represent the deformation amount of the first edge 41 at the position of the central first mask 50C1.

[0102] The first side 41 and the second side 42 receive reaction forces from the shield 50. In the following description, the symbol RXX is sometimes used to represent the reaction force received by the first side 41 from the shield 50XX. For example, the symbol RA4 is used to represent the reaction force received by the first side 41 from the 14th shield 50A4. For example, the symbol RC1 is used to represent the reaction force received by the first side 41 from the central first shield 50C1.

[0103] In the following description, when explaining the common structure of each shield, the term "shield 50" and its symbol will sometimes be used. Also, regarding tension, restoring force, and reaction force, when explaining the common characteristics of each shield 50, the terms and symbols such as "tension T", "restoring force F", and "reaction force R" will sometimes be used.

[0104] The mask 50 is fixed to the first side 41 and the second side 42 by the fixing part 47. For example, as shown in FIG5, the fixing part 47 includes a welding part 47a. The welding part 47a is formed by fusing a portion of the mask 50 with a portion of the frame 40. The welding part 47a is formed, for example, by irradiating the end 51 of the mask 50 that overlaps with the first frame surface 401 of the frame 40 with a laser. The fixing part 47 may include a plurality of welding parts 47a. The welding parts 47a may be arranged along the inner edge of the first side 41 in plan view.

[0105] The third side 43 and the fourth side 44 will be described. As shown in Figure 4, the third side 43 and the fourth side 44 may not be elastically deformable. Alternatively, the third side 43 and the fourth side 44 may also be elastically deformable. Figure 6 is a top view showing an example of the shielding device 15.

[0106] As shown in Figure 6, the third side 43 and the fourth side 44 can be elastically deformed outward. Line L21 indicates the position of the outer surface 43a of the third side 43 before deformation. Line L22 indicates the position of the outer surface 44a of the fourth side 44 before deformation.

[0107] The dimensions of the frame 40 are described. The dimensions of the frame 40 are set to appropriately generate a restoring force F. The first side 41 has a width W1. The width W1 is the dimension of the first side 41 in the first direction D1. The width W1 can be, for example, 20 mm or more, 60 mm or more, or 100 mm or more. The width W1 can be, for example, 150 mm or less, 200 mm or less, or 250 mm or less. The range of the width W1 can be determined by a first group including 20 mm, 60 mm and 100 mm, and / or a second group including 150 mm, 200 mm and 250 mm. The range of the width W1 can also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the width W1 can also be determined by a combination of any two values ​​contained in the first group. The range of width W1 can also be determined by any combination of any two values ​​contained in the second group above. For example, width W1 can be 20 mm to 250 mm, or 20 mm to 200 mm, or 20 mm to 150 mm, or 20 mm to 100 mm, or 20 mm to 60 mm, or 60 mm to 250 mm, or 60 mm to 200 mm, or 60 mm to 150 mm, or 60 mm to 100 mm, or 100 mm to 250 mm, or 100 mm to 200 mm, or 100 mm to 150 mm, or 150 mm to 250 mm, or 150 mm to 200 mm, or 200 mm to 250 mm.

[0108] The first side 41 has a cross-sectional area B1. The cross-sectional area B1 is the cross-sectional area calculated when the first side 41 is cut off by a plane orthogonal to the second direction D2. The cross-sectional area B1 may be, for example, 600 mm2 or more, 1800 mm2 or more, or 3000 mm2 or more. The cross-sectional area B1 may be, for example, 4500 mm2 or less, 6000 mm2 or less, or 7500 mm2 or less. The range of the cross-sectional area B1 may be determined by a first group including 600 mm2, 1800 mm2 and 3000 mm2, and / or a second group including 4500 mm2, 6000 mm2 and 7500 mm2. The range of the cross-sectional area B1 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the cross-sectional area B1 can also be determined by any combination of two values ​​contained in the first group mentioned above. The range of the cross-sectional area B1 can also be determined by any combination of two values ​​contained in the second group mentioned above. For example, the cross-sectional area B1 can be 600 mm² to 7500 mm², or 600 mm² to 6000 mm², or 600 mm² to 4500 mm², or 600 mm² to 3000 mm², or 600 mm² to 1800 mm², or 1800 mm² to 7500 mm², or 1800 mm² to 6000 mm², or 1800 mm² to 4500 mm², or 1800 mm² to 3000 mm², or 3000 mm² to 7500 mm², or 3000 mm² to 6000 mm², or 3000 mm² to 4500 mm², or 4500 mm² to 7500 mm². The area can be between 6000 mm2 and 6000 mm2, or between 6000 mm2 and 7500 mm2.

[0109] The range of widths for the second side 42, the third side 43, and the fourth side 44 can be the range of widths W1 described above. The range of cross-sectional areas for the second side 42, the third side 43, and the fourth side 44 can be the range of cross-sectional areas B1 described above.

[0110] The mask 50 will be described in detail. Figure 7 is a top view showing an example of the mask 50. In the top view, the mask 50 may include a first side edge 501 and a second side edge 502 extending in the first direction D1, and a first end 503 and a second end 504. The first end 503 and the second end 504 are the ends of the mask 50 in the first direction D1.

[0111] The through-hole group 53 of the intermediate part 52 includes a plurality of through holes 56 arranged regularly in a top view. The through holes 56 may be arranged periodically in two directions. For example, the through holes 56 may be arranged periodically in the first direction D1 and the second direction D2.

[0112] One via group 53 corresponds to one organic device 100. For example, a plurality of first organic layers 130A contained in an organic device 100 are formed by vapor-deposited material through a plurality of vias 56 of one via group 53. The mask 50 includes at least one via group 53. The mask 50 may include two or more via groups 53 arranged in the first direction D1.

[0113] The mask 50 has a dimension M11 in the first direction D1. Dimension M11 may be, for example, 600 mm or more, 800 mm or more, or 1000 mm or more. Dimension M11 may be, for example, 1200 mm or less, 1500 mm or less, or 2000 mm or less. The range of dimension M11 may be determined by a first group including 600 mm, 800 mm, and 1000 mm, and / or a second group including 1200 mm, 1500 mm, and 2000 mm. The range of dimension M11 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of dimension M11 may also be determined by a combination of any two values ​​contained in the first group. The range of dimension M11 may also be determined by a combination of any two values ​​contained in the second group. For example, size M11 can be 600 mm to 2000 mm, or 600 mm to 1500 mm, or 600 mm to 1200 mm, or 600 mm to 1000 mm, or 600 mm to 800 mm, or 800 mm to 2000 mm, or 800 mm to 1500 mm, or 800 mm to 1200 mm, or 800 mm to 1000 mm, or 1000 mm to 2000 mm, or 1000 mm to 1500 mm, or 1000 mm to 1200 mm, or 1200 mm to 2000 mm, or 1200 mm to 1500 mm, or 1500 mm to 2000 mm.

[0114] The mask 50 has a dimension M21 in the second direction D2. Dimension M21 may be, for example, 50 mm or more, 100 mm or more, or 150 mm or more. Dimension M21 may be, for example, less than 200 mm, less than 300 mm, or less than 410 mm. The range of dimension M21 may be determined by a first group including 50 mm, 100 mm, and 150 mm, and / or a second group including 200 mm, 300 mm, and 410 mm. The range of dimension M21 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of dimension M21 may also be determined by a combination of any two values ​​contained in the first group. The range of dimension M21 may also be determined by a combination of any two values ​​contained in the second group. For example, size M21 can be 50 mm to 410 mm, or 50 mm to 300 mm, or 50 mm to 200 mm, or 50 mm to 150 mm, or 50 mm to 100 mm, or 100 mm to 410 mm, or 100 mm to 300 mm, or 100 mm to 200 mm, or 100 mm to 150 mm, or 150 mm to 410 mm, or 150 mm to 300 mm, or 150 mm to 200 mm, or 200 mm to 410 mm, or 200 mm to 300 mm, or 300 mm to 410 mm.

[0115] Next, the cross-sectional structure of the mask 50 will be described. Figure 8 is a cross-sectional view showing an example of the mask 50.

[0116] The mask 50 has a substrate 55 and a through hole 56 through the substrate 55. The substrate 55 includes a first surface 551 and a second surface 552. The through hole 56 extends through the substrate 55 from the first surface 551 toward the second surface 552.

[0117] The through hole 56 may include a first recess 561, a second recess 562, and a connecting portion 563 connecting the first recess 561 and the second recess 562. The first recess 561 is a recess located on the first surface 551 and recessed towards the second surface 552. The second recess 562 is a recess located on the second surface 552 and recessed towards the first surface 551. The through hole 56 is formed by connecting the first recess 561 and the second recess 562. The first recess 561 is formed by processing the substrate 55 from the first surface 551 side using etching or laser. The second recess 562 is formed by processing the substrate 55 from the second surface 552 side using etching or laser.

[0118] The first recess 561 has a dimension r1 in top view. The second recess 562 has a dimension r2 in top view. Dimension r2 may be larger than dimension r1. For example, in top view, the outline of the second recess 562 may surround the outline of the first recess 561.

[0119] The connecting portion 563 may have a continuous profile around the entire circumference. The connecting portion 563 may be located between the first surface 551 and the second surface 552. The connecting portion 563 may be divided into a through portion 564 with the smallest opening area formed in the top view of the through hole 56 of the mask 50.

[0120] The dimension r of the through portion 564 may be, for example, 10 μm or more, 15 μm or more, 20 μm or more, or 25 μm or more. Furthermore, the dimension r of the through portion 564 may be, for example, 40 μm or less, 45 μm or less, 50 μm or less, or 55 μm or less. The range of the dimension r of the through portion 564 may be determined by a first group including 10 μm, 15 μm, 20 μm, and 25 μm, and / or a second group including 40 μm, 45 μm, 50 μm, and 55 μm. The range of the dimension r of the through portion 564 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the dimension r of the through portion 564 may also be determined by a combination of any two values ​​contained in the first group. The range of the dimension r of the through portion 564 can also be determined by any combination of any two values ​​contained in the second group mentioned above. For example, the dimension r of the through portion 564 can be 10 μm or more and 55 μm or less, or 10 μm or more and 45 μm or less, or 10 μm or more and 40 μm or less, or 10 μm or more and 25 μm or less, or 10 μm or more and 20 μm or less, or 10 μm or more and 15 μm or less, or 15 μm or more and 55 μm or less, or 15 μm or more and 45 μm or less, or 15 μm or more and 40 μm or less, or 15 μm or more and 25 μm or less, or 15 μm or more and 20 μm or less, or 20 μm or more and 55 μm or less, or 20 μm or more and 50 μm or less, or 20 μm or more and 45 μm or less, or 20 μm or more and 40 μm or less. It can be below μm, or above 20 μm and below 25 μm, or above 25 μm and below 55 μm, or above 25 μm and below 50 μm, or above 25 μm and below 45 μm, or above 25 μm and below 40 μm, or above 40 μm and below 55 μm, or above 40 μm and below 50 μm, or above 40 μm and below 45 μm, or above 45 μm and below 55 μm, or above 50 μm and below 55 μm.

[0121] The dimension r of the through portion 564 is defined by the light passing through the through hole 56. Specifically, parallel light is incident on one of the first surface 551 or the second surface 552 of the mask 50 along the normal direction of the mask 50, and exits from the other of the first surface 551 or the second surface 552 through the through hole 56. The dimension of the area occupied by the emitted light in the surface direction of the mask 50 is used as the dimension r of the through portion 564.

[0122] Figure 8 shows an example where the second surface 552 of the substrate 55 remains between two adjacent second recesses 562, but this is not a limitation. Although not shown, etching can also be performed by connecting two adjacent second recesses 562. That is, there are also portions between two adjacent second recesses 562 where the second surface 552 of the substrate 55 does not remain.

[0123] The materials of the mask 50 and the frame 40 will be described. As the main materials of the mask 50 and the frame 40, an iron alloy containing nickel can be used. The iron alloy may also contain cobalt in addition to nickel. For example, as the material of the substrate 55 of the mask 50, an iron alloy with a total nickel and cobalt content of 28% by mass or more and 54% by mass or less, and a cobalt content of 0% by mass or more and 6% by mass or less can be used. This reduces the difference between the coefficient of thermal expansion of the mask 50 and the frame 40 and the coefficient of thermal expansion of the substrate 110 containing glass. Therefore, the dimensional accuracy or positional accuracy of the layer formed on the substrate 110 by vapor deposition can be suppressed from decreasing due to the thermal expansion of the mask 50, the frame 40, the substrate 110, etc.

[0124] The total content of nickel and cobalt in the base material 55 may be 28% by mass or more and 38% by mass or less. In this case, specific examples of ferroalloys containing nickel or nickel and cobalt may include nickel steel, super nickel steel, and ultra nickel steel. Nickel steel is a ferroalloy containing 34% by mass or more and 38% by mass of nickel, and the remainder being iron and unavoidable impurities. Super nickel steel is a ferroalloy containing 30% by mass or more and 34% by mass of nickel and cobalt, and the remainder being iron and unavoidable impurities. Ultra nickel steel is a ferroalloy containing 28% by mass or more and 34% by mass of nickel, 2% by mass or more and 7% by mass of cobalt, 0.1% by mass or more and 1.0% by mass of manganese, 0.10% by mass of silicon, 0.01% by mass of carbon, and the remainder being iron and unavoidable impurities.

[0125] The total content of nickel and cobalt in the mask 50 may be 38% by mass or more and 54% by mass or less. For example, the mask 50 may be composed of an iron alloy containing 38% by mass or more and 54% by mass of nickel, and the remainder of iron and unavoidable impurities. Such a mask 50 may be manufactured by a plating method.

[0126] During the vapor deposition process, if the temperatures of the mask 50, frame 40, and substrate 110 do not reach a high temperature, it is not necessary for the coefficients of thermal expansion of the mask 50 and frame 40 to be equal to those of the substrate 110. In this case, materials other than the aforementioned ferroalloys can be used as the material constituting the mask 50. For example, ferroalloys other than the aforementioned nickel-containing ferroalloys, such as chromium-containing ferroalloys, can be used. For example, ferroalloys containing chromium, such as those known as stainless steel, can be used. Alternatively, alloys other than ferroalloys, such as nickel or nickel-cobalt alloys, can also be used.

[0127] The thickness T0 of the mask 50 may, for example, be 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. Furthermore, the thickness T0 may, for example, be 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of thickness T0 may be determined by a first group including 8 μm, 10 μm, 13 μm, and 15 μm, and / or a second group including 20 μm, 30 μm, 40 μm, and 50 μm. The range of thickness T0 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of thickness T0 may also be determined by a combination of any two values ​​contained in the first group. The range of thickness T0 may also be determined by a combination of any two values ​​contained in the second group. For example, the thickness T0 can be 8 μm or more but less than 50 μm, or 8 μm or more but less than 40 μm, or 8 μm or more but less than 30 μm, or 8 μm or more but less than 20 μm, or 8 μm or more but less than 15 μm, or 8 μm or more but less than 13 μm, or 8 μm or more but less than 10 μm, or 10 μm or more but less than 50 μm, or 10 μm or more but less than 40 μm, or 10 μm or more but less than 30 μm, or 10 μm or more but less than 20 μm, or 10 μm or more but less than 15 μm, or 10 μm or more but less than 13 μm, or 13 μm or more but less than 50 μm, or 13 μm or more but less than 40 μm, or 13 μm or more but less than 30 μm, or 13 μm or more but less than 20 μm, or 13 μm or more but less than 15 μm. It can be below μm, or above 15 μm and below 50 μm, or above 15 μm and below 40 μm, or above 15 μm and below 30 μm, or above 15 μm and below 20 μm, or above 20 μm and below 50 μm, or above 20 μm and below 40 μm, or above 20 μm and below 30 μm, or above 30 μm and below 50 μm, or above 30 μm and below 40 μm, or above 40 μm and below 50 μm.

[0128] By making the thickness T0 less than 50 μm, the adhesion of the vapor-deposited material 7 to the wall surface of the through-hole 56 before passing through the through-hole 56 can be suppressed. This improves the utilization efficiency of the vapor-deposited material 7. Furthermore, by making the thickness T0 more than 8 μm, the strength of the mask 50 can be ensured, and damage or deformation of the mask 50 can be suppressed.

[0129] As a method for measuring thickness T0, a contact measurement method is adopted. As a contact measurement method, the HEIDENHAIM-METRO "MT1271" length gauge manufactured by Heidenhain Corporation is used, which has a ball bushing guided plunger.

[0130] Next, the manufacturing apparatus for manufacturing the aforementioned shielding device 15 will be described. Figure 9 is a block diagram showing an example of the manufacturing apparatus 60. Figure 10 is a top view showing an example of the manufacturing apparatus 60. The manufacturing apparatus 60 may include a pressing mechanism 62, a displacement measuring mechanism 61, and a control device 63. The manufacturing apparatus 60 may also include an observation device 73, a fixing device 74, a stretching device 76, etc.

[0131] The pressing mechanism 62 presses the first side 41 and the second side 42 of the frame 40 in the direction toward the opening 45. For example, the pressing mechanism 62 presses the first side 41 and the second side 42 inward in the first direction D1. The displacement measuring mechanism 61 measures the amount of deformation of the first side 41 and the second side 42 in the first direction D1.

[0132] The control device 63 controls the pressing mechanism 62 based on information related to the deformation of the first side 41 and the second side 42. If the first side 41 and the second side 42 are elastically deformed inward, an outward restoring force is generated on the first side 41 and the second side 42. Therefore, the shield 50 is stretched outward in the first direction D1 by the first side 41 and the second side 42. By adjusting the deformation of the first side 41 and the second side 42, the tension applied to the shield 50 can be adjusted. By controlling the pressing mechanism 62 in such a way that the deformation of the first side 41 and the second side 42 is the target deformation, the tension applied to the shield 50 can be appropriately adjusted.

[0133] The function of the control device 63 can be realized, for example, by using software that operates on a computer such as a personal computer. For example, by installing a program on a computer, the computer can function as the control device 63.

[0134] The program can be pre-installed on the computer at the time of manufacture, or it can be installed on the computer after manufacture using a non-transitory recording medium that can be read by the computer and contains the program. There is no particular limitation on the type of recording medium; various recording media can be considered, such as portable recording media like floppy disks or optical discs, or fixed recording media like hard disk drives or memory. Furthermore, the program can be distributed via communication lines such as the Internet. Moreover, when the program is distributed via a communication line, the server used for distribution contains a recording medium that at least temporarily stores the program of this embodiment.

[0135] The observation device 73 observes the mask 50. The observation device 73 includes, for example, a camera. The observation device 73 detects the through-hole 56, contour, etc. of the mask 50. The observation device 73 can also detect marks formed on the mask 50.

[0136] The observation device 73 may be supported by a moving mechanism 71. The moving mechanism 71 moves the observation device 73 along a first direction D1, a second direction D2, etc. For example, the moving mechanism 71 may include a first moving device 72 that moves the observation device 73 along the first direction D1. The moving mechanism 71 may include a second moving device that moves the first moving device 72 along the second direction D2. By observing the mask 50 from multiple positions by the observation device 73, information about the position of the mask 50 relative to the frame 40 can be obtained.

[0137] The tensioning device 76 applies tension to the cover 50, which is not fixed to the frame 40, in the first direction D1. As described below, the tensioning device 76 includes, for example, a clamp. The tensioning device 76 can also transport the cover 50 in the in-plane direction of the first frame surface 401 of the frame 40.

[0138] The fixing device 74 fixes the mask 50 to the first side 41 and the second side 42. The fixing device 74, for example, irradiates the mask 50 with laser light. The mask 50 is fixed to the frame 40 by forming the aforementioned welded portion 47a between the mask 50 and the frame 40. The fixing device 74 can also fix the mask 50 to the frame 40 while the mask 50 is under tension applied by the tensioning device 76.

[0139] The fixed device 74 may also be supported by the moving mechanism 71. The moving mechanism 71 that moves the fixed device 74 may be the same as or different from the moving mechanism 71 that moves the observation device 73.

[0140] The control device 63 can control the tensioning device 76 and the fixing device 74 based on information from the observation device 73. For example, the control device 63 controls the tensioning device 76 so that the position of the through hole 56, outline, markings, etc. of the mask 50 is oriented towards the target position. For example, the control device 63 controls the position of the tensioning device 76 and the tension applied by the tensioning device 76 to the mask 50. When the difference between the actual position and the target position of the mask 50 is below a threshold, the control device 63 fixes the mask 50 to the frame 40 by controlling the fixing device 74.

[0141] The control device 63 for controlling the stretching device 76 and the fixing device 74 may be the same as or different from the control device 63 for controlling the pressing mechanism 62.

[0142] The pressing mechanism 62 will be described in detail. The pressing mechanism 62 for pressing the first side 41 may include a plurality of pressing devices. Preferably, the pressing mechanism 62 includes five or more pressing devices for pressing the first side 41. For example, the pressing mechanism 62 may include six pressing devices for pressing the first side 41. Each pressing device can press the outer surface 41a of the first side 41 inward.

[0143] The pressing device for pressing the first side 41 can be classified into a central group 62C, a first group 62A, and a second group 62B. As shown in Figure 10, the first group 62A is located between the central group 62C and the third side 43 in the second direction D2. The second group 62B is located between the central group 62C and the fourth side 44 in the second direction D2.

[0144] The central group 62C includes one or two pressing devices. When N, representing the number of masks 50, is an even number, the central group 62C may include two pressing devices. When N is an odd number, the central group 62C may include one pressing device. In this embodiment, the central group 62C includes a first central pressing device 62C1 and a second central pressing device 62C2. As shown in FIG10, the first central pressing device 62C1 may be located between the second center line Lc2 and the third side 43. The second central pressing device 62C2 may be located between the second center line Lc2 and the fourth side 44. Although not shown, the first central pressing device 62C1 or the second central pressing device 62C2 may also overlap with the second center line Lc2.

[0145] The first group 62A includes two or more pressing devices. In this embodiment, the first group 62A includes an eleventh pressing device 62A1 and a twelfth pressing device 62A2 arranged sequentially in the direction from the third side 43 toward the second center line Lc2.

[0146] The second group 62B includes two or more pressing devices. The number of pressing devices included in the second group 62B may be the same as the number of pressing devices included in the first group 62A. In this embodiment, the second group 62B includes a 21st pressing device 62B1 and a 22nd pressing device 62B2 arranged sequentially in the direction from the fourth side 44 toward the second center line Lc2.

[0147] The pressing devices can be arranged at intervals along the second direction D2. In the example shown in FIG10, the 11th pressing device 62A1, the 12th pressing device 62A2, the 1st central pressing device 62C1, the 2nd central pressing device 62C2, the 22nd pressing device 62B2 and the 21st pressing device 62B1 are arranged sequentially in the direction from the 3rd side 43 toward the 4th side 44.

[0148] The spacing between two adjacent pressing devices in the second direction D2 is preferably 500 mm or less. By reducing the spacing, the deformation of the first side 41 at each position can be precisely adjusted. This can suppress the tension applied by the first side 41 to each shield 50 from deviating from the target tension. The spacing is calculated based on the center position of the portion of the pressing device that contacts the first side 41. Symbols 65A1, 65A2, 65C1, 65C2, 65B2 and 65B1 represent portions of the 11th pressing device 62A1, the 12th pressing device 62A2, the first central pressing device 62C1, the second central pressing device 62C2, the 22nd pressing device 62B2 and the 21st pressing device 62B1 that contact the first side 41.

[0149] The interval between two adjacent pressing devices may be, for example, 50 mm or more, 100 mm or more, or 200 mm or more. The interval between two adjacent pressing devices may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of the interval between two adjacent pressing devices may be determined by a first group including 50 mm, 100 mm, and 200 mm, and / or a second group including 300 mm, 400 mm, and 500 mm. The range of the interval between two adjacent pressing devices may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the interval between two adjacent pressing devices may also be determined by a combination of any two values ​​contained in the first group. The range of the interval between two adjacent pressing devices may also be determined by a combination of any two values ​​contained in the second group. For example, the interval between two adjacent pressing devices can be 50 mm to 500 mm, or 50 mm to 400 mm, or 50 mm to 300 mm, or 50 mm to 200 mm, or 50 mm to 100 mm, or 100 mm to 500 mm, or 100 mm to 400 mm, or 100 mm to 300 mm, or 100 mm to 200 mm, or 200 mm to 500 mm, or 200 mm to 400 mm, or 200 mm to 300 mm, or 300 mm to 400 mm, or 400 mm to 500 mm.

[0150] The symbol S2_AA represents the interval between two pressing devices belonging to Group 1 62A. The symbol S2_AC represents the interval between a pressing device belonging to Group 1 62A and a pressing device belonging to Central Group 62C. The symbol S2_CC represents the interval between two pressing devices belonging to Central Group 62C. The symbol S2_BC represents the interval between a pressing device belonging to Group 2 62B and a pressing device belonging to Central Group 62C. The symbol S2_BB represents the interval between two pressing devices belonging to Group 2 62B. Intervals S2_AA, S2_AC, S2_CC, S2_BC, and S2_BB may be the same or different.

[0151] The pressing mechanism 62 for pressing the second side 42 may also include a plurality of pressing devices. Preferably, the pressing mechanism 62 includes five or more pressing devices for pressing the second side 42. In the example shown in FIG10, the pressing mechanism 62 includes six pressing devices for pressing the second side 42. Each pressing device can press the outer surface 42a of the second side 42 inward.

[0152] The configuration of the pressing device for pressing the second side 42 can be the same as that for pressing the first side 41. For example, as shown in FIG10, the pressing mechanism 62 may include the 11th pressing device 62A1, the 12th pressing device 62A2, the first central pressing device 62C1, the second central pressing device 62C2, the 22nd pressing device 62B2, and the 21st pressing device 62B1 arranged sequentially in the direction from the third side 43 toward the fourth side 44 and pressing the second side 42.

[0153] The spacing between two adjacent pressing devices located on the second side 42 and in the second direction D2 is preferably 500 mm or less. The range of values ​​for the spacing between two adjacent pressing devices located on the second side 42 and in the second direction D2 can be the range of values ​​for the spacing between two adjacent pressing devices located on the first side 41 and in the second direction D2. The pressing devices located on the first side 41 and the pressing devices located on the second side 42 can be arranged in the first direction D1. For example, the first central pressing device 62C1 located on the first side 41 and the first central pressing device 62C1 located on the second side 42 can be located at the same coordinate in the second direction D2.

[0154] The symbol S_11 shown in Figure 10 represents the distance in the first direction D1 between the pressing device pressing the first side 41 and the pressing device pressing the second side 42. The distance S_11 can be, for example, 1300 mm or more, 1500 mm or more, or 1700 mm or more. The distance S_11 can be, for example, 1900 mm or less, 2100 mm or less, or 2400 mm or less. The range of the distance S_11 can be determined by a first group including 1300 mm, 1500 mm, and 1700 mm, and / or a second group including 1900 mm, 2100 mm, and 2400 mm. The range of the distance S_11 can also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of distance S_11 can also be determined by any combination of two values ​​contained in the first group mentioned above. The range of distance S_11 can also be determined by any combination of two values ​​contained in the second group mentioned above. For example, the distance S_11 can be 1300 mm to 2400 mm, or 1300 mm to 2100 mm, or 1300 mm to 1900 mm, or 1300 mm to 1700 mm, or 1300 mm to 1500 mm, or 1500 mm to 2400 mm, or 1500 mm to 2100 mm, or 1500 mm to 1900 mm, or 1500 mm to 1700 mm, or 1700 mm to 2400 mm, or 1700 mm to 2100 mm, or 1700 mm to 1900 mm, or 1900 mm to 2400 mm, or 1900 mm to 2100 mm, or 2100 mm to 2400 mm.

[0155] When describing the common configuration of each pressing device, the term and symbol "pressing device 62x" are sometimes used.

[0156] The displacement measuring mechanism 61 will be described in detail. The displacement measuring mechanism 61 for measuring the deformation of the first side 41 may include a plurality of displacement gauges. Preferably, the displacement measuring mechanism 61 includes displacement gauges that measure the deformation of the first side 41 near each pressing device. The number of displacement gauges that measure the deformation of the first side 41 is preferably more than the number of pressing devices that press the first side 41. For example, when the number of pressing devices that press the first side 41 is 5, the displacement measuring mechanism 61 preferably includes 5 or more displacement gauges. In this way, displacement gauges can be arranged near all pressing devices.

[0157] As shown in Figure 9, the displacement gauges measuring the deformation of the first side 41 near the pressing device can be classified into a central measuring group 61C, a first measuring group 61A, and a second measuring group 61B. The first measuring group 61A is located between the central measuring group 61C and the third side 43 in the second direction D2. The second measuring group 61B is located between the central measuring group 61C and the fourth side 44 in the second direction D2.

[0158] The central measuring group 61C includes one or two displacement gauges. When the central group 62C of the pressing mechanism 62 includes one pressing device, the central measuring group 61C may include one displacement gauge. When the central group 62C includes two pressing devices, the central measuring group 61C may include two displacement gauges. In this embodiment, the central measuring group 61C includes a first central displacement gauge 61C1 and a second central displacement gauge 61C2. The first central displacement gauge 61C1 is located near the first central pressing device 62C1. The second central displacement gauge 61C2 is located near the second central pressing device 62C2.

[0159] The first measuring group 61A includes two or more displacement gauges. In this embodiment, the first measuring group 61A includes an 11th displacement gauge 61A1 and a 12th displacement gauge 61A2 arranged sequentially in the direction from the third side 43 toward the second center line Lc2. The 11th displacement gauge 61A1 is located near the 11th pressing device 62A1. The 12th displacement gauge 61A2 is located near the 12th pressing device 62A2.

[0160] The second measurement group 61B includes two or more displacement gauges. In this embodiment, the second measurement group 61B includes a 21st displacement gauge 61B1 and a 22nd displacement gauge 61B2 arranged sequentially in the direction from the fourth side 44 toward the second center line Lc2. The 21st displacement gauge 61B1 is located near the 21st pressing device 62B1. The 22nd displacement gauge 61B2 is located near the 22nd pressing device 62B2.

[0161] When describing the common structure of various displacement gauges, the term and symbol "displacement gauge 61x" are sometimes used.

[0162] Figure 11 is a diagram showing an example of a pressing device 62x and a displacement meter 61x. The displacement meter 61x is located near the pressing device 62x. The interval S_F between the pressing device 62x and the displacement meter 61x in the second direction D2 is preferably 100 mm or less. By reducing the interval S_F, the pressing device 62x can be controlled more precisely based on the measurement results of the displacement meter 61x. Therefore, the amount of deformation at each position of the first side 41 can be precisely adjusted. In this way, the tension applied by the first side 41 to each shield 50 can be suppressed from deviating from the target tension. The interval S_F is calculated based on the center position of the portion 65 of the pressing device 62x that contacts the first side 41 and the position of the first side 41 measured by the displacement meter 61x. When the displacement gauge 61x contacts the first side 41, the position of the first side 41 measured by the displacement gauge 61x is the center position of the portion 64 of the displacement gauge 61x that is in contact with the first side 41. During the manufacture of the cover device 15 using the manufacturing apparatus 60, it is preferable that the interval S_F is maintained at a fixed position. That is, the displacement gauge 61x is preferably stationary relative to the pressing device 62x in the second direction D2. The displacement gauge 61x that is stationary relative to the pressing device 62x in the second direction D2 during the manufacture of the cover device 15 using the manufacturing apparatus 60 is also referred to as a stationary displacement gauge 61x.

[0163] The interval S_F can be, for example, 1 mm or more, 5 mm or more, or 10 mm or more. The interval S_F can be, for example, 20 mm or less, 50 mm or less, or 100 mm or less. The range of the interval S_F can be determined by a first group including 1 mm, 5 mm and 10 mm, and / or a second group including 20 mm, 50 mm and 100 mm. The range of the interval S_F can also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the interval S_F can also be determined by a combination of any two values ​​contained in the first group. The range of the interval S_F can also be determined by a combination of any two values ​​contained in the second group. For example, the interval S_F can be 1 mm to 100 mm, or 1 mm to 50 mm, or 1 mm to 20 mm, or 1 mm to 10 mm, or 1 mm to 5 mm, or 5 mm to 100 mm, or 5 mm to 50 mm, or 5 mm to 20 mm, or 5 mm to 10 mm, or 10 mm to 100 mm, or 10 mm to 50 mm, or 10 mm to 20 mm, or 20 mm to 100 mm, or 20 mm to 50 mm, or 50 mm to 100 mm.

[0164] The displacement meter 61x may include a sensing head 611 and a support 612. The support 612 supports the sensing head 611 in such a way that the sensing head 611 can move in the first direction D1. The sensing head 611 includes a front end that contacts the outer side 41a of the first side 41. The displacement meter 61x detects the amount of deformation of the first side 41 based on the position of the front end of the sensing head 611.

[0165] The pressing device 62x may include a rod 621 and a drive unit 622. The drive unit 622 drives the rod 621 in the first direction D1. The drive unit 622 may include, for example, a motor. The rod 621 includes a front end that contacts the outer side 41a of the first side 41. The pressing device 62x may include a load cell or a load cell. The load cell detects the pressing force applied to the frame 40 by the rod 621.

[0166] As shown in Figure 10, the displacement measuring mechanism 61 may include a first auxiliary displacement gauge 61D and a second auxiliary displacement gauge 61E. The first auxiliary displacement gauge 61D measures the deformation of the first side 41 at a position on the second direction D2, at a distance S_D from the outer surface 43a of the third side 43. The second auxiliary displacement gauge 61E measures the deformation of the first side 41 at a position on the second direction D2, at a distance S_E from the outer surface 44a of the fourth side 44. The configuration of the first auxiliary displacement gauge 61D and the second auxiliary displacement gauge 61E may be the same as or different from the configuration of the displacement gauges in the central measuring group 61C, the first measuring group 61A, and the second measuring group 61B.

[0167] The distances S_D and S_E can be, for example, 1 mm or more, 5 mm or more, or 20 mm or more. The distances S_D and S_E can be, for example, less than 50 mm, less than 100 mm, or less than 200 mm. The range of distances S_D and S_E can be determined by a first group including 1 mm, 5 mm, and 20 mm, and / or a second group including 50 mm, 100 mm, and 200 mm. The range of distances S_D and S_E can also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of distances S_D and S_E can also be determined by a combination of any two values ​​contained in the first group. The range of distances S_D and S_E can also be determined by a combination of any two values ​​contained in the second group. For example, the distances S_D and S_E can be 1 mm to 200 mm, or 1 mm to 100 mm, or 1 mm to 50 mm, or 1 mm to 20 mm, or 1 mm to 5 mm, or 5 mm to 200 mm, or 5 mm to 100 mm, or 5 mm to 50 mm, or 5 mm to 20 mm, or 20 mm to 200 mm, or 20 mm to 100 mm, or 20 mm to 50 mm, or 50 mm to 200 mm, or 50 mm to 100 mm, or 100 mm to 200 mm.

[0168] The interval between two adjacent displacement gauges in the second direction D2 is preferably 500 mm or less. By reducing the interval, the amount of deformation at each position of the first side 41 can be accurately measured. Therefore, the amount of deformation at each position of the first side 41 can be precisely adjusted using a pressing device. This helps to prevent the tension applied by the first side 41 to each shield 50 from deviating from the target tension.

[0169] The interval between two adjacent displacement gauges may be, for example, 50 mm or more, 100 mm or more, or 200 mm or more. The interval between two adjacent displacement gauges may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of the interval between two adjacent displacement gauges may be determined by a first group including 50 mm, 100 mm, and 200 mm, and / or a second group including 300 mm, 400 mm, and 500 mm. The range of the interval between two adjacent displacement gauges may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the interval between two adjacent displacement gauges may also be determined by a combination of any two values ​​contained in the first group. The range of the interval between two adjacent displacement gauges may also be determined by a combination of any two values ​​contained in the second group. For example, the interval between two adjacent displacement gauges can be 50 mm to 500 mm, or 50 mm to 400 mm, or 50 mm to 300 mm, or 50 mm to 200 mm, or 50 mm to 100 mm, or 100 mm to 500 mm, or 100 mm to 400 mm, or 100 mm to 300 mm, or 100 mm to 200 mm, or 200 mm to 500 mm, or 200 mm to 400 mm, or 200 mm to 300 mm, or 300 mm to 500 mm, or 300 mm to 400 mm, or 400 mm to 500 mm.

[0170] The symbol S1_AA represents the interval between two displacement gauges belonging to the first measurement group 61A. The symbol S1_AC represents the interval between a displacement gauge belonging to the first measurement group 61A and a displacement gauge belonging to the central measurement group 61C. The symbol S1_CC represents the interval between two displacement gauges belonging to the central measurement group 61C. The symbol S1_BC represents the interval between a displacement gauge belonging to the second measurement group 61B and a displacement gauge belonging to the central measurement group 61C. The symbol S1_BB represents the interval between two displacement gauges belonging to the second measurement group 61B. Intervals S1_AA, S1_AC, S1_CC, S1_BC, and S1_BB may be the same or different.

[0171] The spacing between adjacent displacement gauges and auxiliary displacement gauges in the second direction D2 is preferably 500 mm or less. The numerical range of the spacing between the displacement gauge and the auxiliary displacement gauge can be the numerical range of the "spacing between two displacement gauges" mentioned above.

[0172] The displacement measuring mechanism 61 for measuring the deformation of the second side 42 may also include a plurality of displacement gauges. Preferably, the displacement measuring mechanism 61 includes displacement gauges that measure the deformation of the second side 42 near each pressing device. The number of displacement gauges measuring the deformation of the second side 42 is preferably greater than or equal to the number of pressing devices pressing the second side 42. For example, when the number of pressing devices pressing the second side 42 is 5, the displacement measuring mechanism 61 preferably includes 5 or more displacement gauges. The displacement measuring mechanism 61 for measuring the deformation of the second side 42 may also include a first auxiliary displacement gauge 61D and a second auxiliary displacement gauge 61E.

[0173] Similarly, on the second side 42, the distance between the pressing device and the displacement gauge on the second direction D2 is preferably 100 mm or less. The range of values ​​for the distance between the pressing device and the displacement gauge on the second direction D2 on the second side 42 can be adopted from the range of values ​​for the distance between the pressing device and the displacement gauge on the first side 41 on the second direction D2.

[0174] Similarly, on the second side 42, the range of the interval in the second direction D2 between two adjacent displacement gauges is 500 mm or less. As the range of the interval in the second direction D2 between two adjacent displacement gauges along the second side 42, the numerical range of the interval between two adjacent displacement gauges along the first side 41 can be used.

[0175] The displacement meter located on the first side 41 and the displacement meter located on the second side 42 can be arranged on the first direction D1. For example, the first central displacement meter 61C1 located on the first side 41 and the first central displacement meter 61C1 located on the second side 42 can be located at the same coordinate on the second direction D2.

[0176] The displacement measuring mechanism 61 for measuring the deformation of the second side 42 may also include a first auxiliary displacement meter 61D and a second auxiliary displacement meter 61E.

[0177] Next, the method for manufacturing the masking device 15 using the manufacturing apparatus 60 will be described. Figure 12 is a flowchart showing one example of the manufacturing method. First, the frame 40 is prepared (step S1). The frame 40 can be placed on a platform (not shown) of the manufacturing apparatus 60. Next, the reference position of the frame 40 is determined (step S2). For example, with the pressing mechanism 62 not pressing the frame 40, the position of the frame 40 is determined using the displacement measuring mechanism 61. For example, with the rod 621 of the pressing device 62x away from the frame 40, the sensing head 611 of the displacement meter 61x is brought into contact with the frame 40. In this way, the position of the frame 40 when it is not deformed, i.e., the reference position, can be determined.

[0178] Next, the mask installation step S3, which involves sequentially installing N mask pieces 50 onto the frame 40, is performed. The step of installing the k-th mask (k is an integer between 1 and N) onto the frame 40 is also referred to as the k-th mask installation step S3(k). The mask installation step S3 includes N steps from the first mask installation step S3(1) to the Nth mask installation step S3(N).

[0179] As shown in Figure 12, the mask installation step S3 is repeated N times with adjustment step S4 and configuration step S5. The adjustment step and configuration step in the k-th mask installation step S3(k) are also referred to as the k-th adjustment step S4(k) and the k-th configuration step S5(k).

[0180] Adjustment step S4 adjusts the pressing force applied by the pressing mechanism 62 to the first side 41 and the second side 42 in the direction toward the opening 45. Specifically, adjustment step S4 adjusts the pressing force in such a way that the deformation of the first side 41 and the second side 42 when each mask 50 is fixed to the first side 41 and the second side 42 is the target deformation amount. The pressing force applied by the pressing mechanism 62 to the first side 41 and the second side 42 in the manufacturing method of the mask device 15 is also referred to as the first pressing force.

[0181] Target deformation amounts are predefined at each position of the first side 41 and each position of the second side 42. With N shields 50 mounted on the frame 40, the first side 41 and the second side 42, deformed according to the target deformation amounts, can have a target tension applied to each shield 50 based on the elastic restoring force. The target deformation amount can be calculated based on the shape, physical properties, etc., of the frame 40. For example, the relationship between the restoring force and the deformation amount can be calculated using the finite element method based on the three-dimensional shape of the frame 40 manufactured by CAD (Computer-aided design). The target deformation amount can be calculated based on this relationship.

[0182] In the following description, the symbol P(k) is sometimes used to represent the first pressing force applied to the first side 41 in the kth adjustment step S4(k). Also, the symbols P(k)_A1, P(k)_A2, P(k)_B1, P(k)_B2, P(k)_C1, and P(k)_C2 are sometimes used to represent the first pressing force applied to the first side 41 by the 11th pressing device 62A1, the 12th pressing device 62A2, the 21st pressing device 62B1, the 22nd pressing device 62B2, the first central pressing device 62C1, and the second central pressing device 62C2 in the kth adjustment step S4(k).

[0183] Sometimes the symbol P(k)_A is used to represent the average value of the first pressing force applied to the first side 41 by the pressing device of the first group 62A in the kth adjustment step S4(k). Sometimes the symbol P(k)_B is used to represent the average value of the first pressing force applied to the first side 41 by the pressing device of the second group 62B in the kth adjustment step S4(k). Sometimes the symbol P(k)_C is used to represent the average value of the first pressing force applied to the first side 41 by the pressing device of the central group 62C in the kth adjustment step S4(k).

[0184] In the following description, the symbol d(k) is sometimes used to represent the deformation amount generated by the first side 41 in the k-th adjustment step S4(k). Also, the symbols d(k)_A1, d(k)_A2, d(k)_B1, d(k)_B2, d(k)_C1, d(k)_C2, d(k)_D, and d(k)_E are sometimes used to represent the deformation amount measured by the 11th displacement gauge 61A1, the 12th displacement gauge 61A2, the 21st displacement gauge 61B1, the 22nd displacement gauge 61B2, the 1st central displacement gauge 61C1, the 2nd central displacement gauge 61C2, the 1st auxiliary displacement gauge 61D, and the 2nd auxiliary displacement gauge 61E in the k-th adjustment step S4(k).

[0185] In the following description, the symbol T_A1 is sometimes used to represent the target deformation amount measured by the 11th displacement gauge 61A1 at the position of the first side 41. Similarly, the symbols T_A2, T_B1, T_B2, T_C1, T_C2, T_D, and T_E are sometimes used to represent the target deformation amounts corresponding to the 12th displacement gauge 61A2, the 21st displacement gauge 61B1, the 22nd displacement gauge 61B2, the first central displacement gauge 61C1, the second central displacement gauge 61C2, the first auxiliary displacement gauge 61D, and the second auxiliary displacement gauge 61E.

[0186] Figure 13 is a flowchart illustrating an example of adjustment step S4 and configuration step S5. The k-th adjustment step S4(k) may include a pressing step S41(k) and a judgment step S42(k). The pressing step S41(k) adjusts the first pressing force P(k) towards the frame 40. The judgment step S42(k) determines whether Δd(k) is below the first threshold TH1. Δd(k) is the absolute value of the difference between the deformation amount d(k) and the target deformation amount. For example, Δd(k) is the absolute value of the difference between the deformation amount d(k)_C1 measured by the first central displacement gauge 61C1 and the target deformation amount T_C1. The judgment step S42(k) may also determine whether Δd(k) is below the first threshold TH1 based on the measured values ​​of multiple deformation amounts. For example, determination step S42(k) can determine whether the difference between deformation amount d(k)_C1 and target deformation amount T_C1, the difference between deformation amount d(k)_A1 and target deformation amount T_A1, and the difference between deformation amount d(k)_A2 and target deformation amount T_A2 are below the first threshold TH1. Determination step S42(k) can also determine whether Δd(k) is below the first threshold TH1 for each of the above deformation amounts d(k)_A1, d(k)_A2, d(k)_B1, d(k)_B2, d(k)_C1, d(k)_C2, d(k)_D, and d(k)_E.

[0187] The first threshold TH1 can be determined based on the accuracy of the calculated tension. The first threshold TH1 can, for example, be 0.01 μm or more, 0.02 μm or more, or 0.05 μm or more. The first threshold TH1 can, for example, be less than 0.10 μm, less than 0.15 μm, or less than 0.20 μm. The range of the first threshold TH1 can be determined by a first group containing 0.01 μm, 0.02 μm, and 0.05 μm, and / or a second group containing 0.10 μm, 0.15 μm, and 0.20 μm. The range of the first threshold TH1 can also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the first threshold TH1 can also be determined by a combination of any two values ​​contained in the first group. The range of the first threshold TH1 can also be determined by any combination of any two values ​​contained in the second group mentioned above. For example, the first threshold TH1 can be 0.01 μm or more and 0.20 μm or less, or 0.01 μm or more and 0.15 μm or less, or 0.01 μm or more and 0.10 μm or less, or 0.01 μm or more and 0.05 μm or less, or 0.01 μm or more and 0.02 μm or less, or 0.02 μm or more and 0.20 μm or less, or 0.02 μm or more and 0.15 μm or less, or 0.02 μm or more and 0.05 μm or less, or 0.05 μm or more and 0.20 μm or less, or 0.05 μm or more and 0.15 μm or more, or 0.05 μm or more and 0.10 μm or more, or 0.10 μm or more and 0.20 μm or less. It can be below μm, or above 0.10 μm and below 0.15 μm, or above 0.15 μm and below 0.20 μm.

[0188] Configuration step S5 fixes the end 51 of the mask 50 to the first side 41 and the second side 42. The k-th fixing step S5(k) may include a position adjustment step S51(k) to adjust the position of the k-th mask 50, a determination step S52(k), and a fixing step S53(k).

[0189] The position adjustment step S51(k) can also adjust the position of the mask 50 while tension is applied to the mask 50. By using the aforementioned moving mechanism 71 and tensioning device 76, the position of the mask 50 can be adjusted while tension is applied to the mask 50. The position adjustment step S51(k) can control the moving mechanism 71 and tensioning device 76 in such a way that the position of the mask 50 relative to the frame 40 becomes the target position. For example, the position adjustment step S51(k) can control the tensioning device 76 and the fixing device 74 based on information from the aforementioned observation device 73.

[0190] The determination step S52(k) determines whether the masking error is below the second threshold TH2. The masking error is, for example, the absolute value of the difference between the actual position and the target position of the mark on the mask 50. The determination step S52(k) can determine whether the masking error is below the second threshold TH2 for one mark. The determination step S52(k) can also determine whether the masking error is below the second threshold TH2 for two or more marks. The determination step S52(k) can determine whether the masking error is below the second threshold TH2 based on the position of elements other than the mark. For example, the determination step S52(k) can also determine whether the masking error is below the second threshold TH2 based on the outline of the mask 50, the position of the through-hole 56, etc. The masking error is also referred to as PPA. "PPA" refers to Pixel Position Accuracy.

[0191] The second threshold TH2 may be 0.1 μm or more, 0.2 μm or more, or 0.5 μm or more. The second threshold TH2 may be 1.0 μm or less, 2.0 μm or less, or 3.0 μm or less. The range of the second threshold TH2 may be determined by a first group containing 0.1 μm, 0.2 μm, and 0.5 μm, and / or a second group containing 1.0 μm, 2.0 μm, and 3.0 μm. The range of the second threshold TH2 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the second threshold TH2 may also be determined by a combination of any two values ​​contained in the first group. The range of the second threshold TH2 may also be determined by a combination of any two values ​​contained in the second group. For example, the second threshold TH2 can be 0.1 μm or more and 3.0 μm or less, or 0.1 μm or more and 2.0 μm or less, or 0.1 μm or more and 1.0 μm or less, or 0.1 μm or more and 0.5 μm or less, or 0.1 μm or more and 0.2 μm or less, or 0.2 μm or more and 3.0 μm or less, or 0.2 μm or more and 2.0 μm or less, or 0.2 μm or more and 1.0 μm or less, or 0.2 μm or more and 0.5 μm or less, or 0.5 μm or more and 3.0 μm or less, or 0.5 μm or more and 2.0 μm or less, or 0.5 μm or more and 1.0 μm or less, or 1.0 μm or more and 3.0 μm or less, or 1.0 μm or more and 2.0 μm or less.

[0192] The fixing step S53(k) is to fix the k-th mask 50 to the first side 41 and the second side 42. By using the above-mentioned fixing device 74, the mask 50 can be fixed to the first side 41 and the second side 42.

[0193] Alternatively, after the mask installation step S3, the release step S6 can be performed. The release step S6 is to reduce the first pressing force on the frame 40 to zero. For example, the levers 621 of each pressing device of the pressing mechanism 62 are removed from the frame 40. Then, the final confirmation step S7 can be performed. The final confirmation step S7 is to measure the amount of deformation that is finally generated on the first side 41 and the second side 42. The amount of deformation that is finally generated on the first side 41 and the second side 42 is also referred to as the final deformation amount.

[0194] The final confirmation step S7 can determine whether the difference between the final deformation amount and the target deformation amount is below the first threshold TH1 mentioned above. The final confirmation step S7 can also determine the plurality of final deformation amounts at each position of the first side 41 and the second side 42. The final confirmation step S7 can also determine the final deformation amount measured by all displacement gauges included in the manufacturing apparatus 60.

[0195] Referring to Figures 10 and 14 to 20, the manufacturing method of the shielding device 15 will be specifically described.

[0196] As shown in FIG10, the position of the frame 40 is measured using the displacement measuring mechanism 61 while the frame 40 is in an undeformed state. Then, the mask installation step S3, which involves installing N masks 50 onto the frame 40, is performed. In this embodiment, an example will be described where the masks 50 are installed on the first side 41 and the second side 42 in the order of distance from the center of the frame 40 in the second direction D2. When the distances from the center of the frame 40 in the second direction D2 are the same, the mask 50 located between the third side 43 and the second center line Lc2 is installed on the first side 41 and the second side 42 before the mask 50 located between the fourth side 44 and the second center line Lc2. Therefore, the 11th mask 50A1, the 21st mask 50B1, the 12th mask 50A2, the 22nd mask 50B2, the 13th mask 50A3, the 23rd mask 50B3, the 14th mask 50A4, the 24th mask 50B4, the central 1st mask 50C1, and the central 2nd mask 50C2 are installed sequentially on the 1st side 41 and the 2nd side 42.

[0197] The first mask 50 is installed on the frame 40 in the first mask installation step S3(1). The first mask 50 is the 11th mask 50A1. The first mask installation step S3(1) includes the first adjustment step S4(1) and the first configuration step S5(1).

[0198] Figure 14 is a diagram showing the first adjustment step S4(1). The first adjustment step S4(1) includes a pressing step S41(1) and a judgment step S42(1). As shown in Figure 14, the pressing step S41(1) is performed when the mask 50 is not installed on the frame 40, pressing the first side 41 and the second side 42. The control device 63 controls the pressing mechanism 62 in such a way that the deformation amounts d(1)_A1, d(1)_A2, d(1)_C(1) are the target deformation amounts.

[0199] The determination step S42(1) determines whether Δd(1) is below the first threshold TH1. If Δd(1) exceeds the first threshold TH1, the pressing step S41(1) is performed again. If Δd(1) is below the first threshold TH1, the first configuration step S5(1) is entered. If Δd(1) is below the first threshold TH1, the first pressing force applied by the pressing device of the pressing mechanism 62 to the first side 41 and the second side 42 can be recorded.

[0200] The control device 63 can control the pressing mechanism 62 in a manner that the difference in the first pressing force applied to the first side 41 by each pressing device of the pressing mechanism 62 in the first adjustment step S4(1) is within a specified range. For example, the control device 63 can control the pressing mechanism 62 in a manner that the first ratio RA1 and the second ratio RA2 are below a specified value. The first ratio RA1 is the ratio of the average first pressing force P(1)_A of the first group 62A to the average first pressing force P(1)_C of the central group 62C in the first adjustment step S4(1). The second ratio RA2 is the ratio of the average first pressing force P(1)_B of the second group 62B to the average first pressing force P(1)_C of the central group 62C in the first adjustment step S4(1). The average first pressing pressure P(1)_A is the average value of the first pressing pressure applied to the first side 41 by the pressing device of the first group 62A in the first adjustment step S4(1). The average first pressing pressure P(1)_B is the average value of the first pressing pressure applied to the first side 41 by the pressing device of the second group 62B in the first adjustment step S4(1). The average first pressing pressure P(1)_C is the average value of the first pressing pressure applied to the first side 41 by the pressing device of the central group 62C in the first adjustment step S4(1).

[0201] The first ratio RA1 and the second ratio RA2 may be, for example, 0.6 or higher, or 0.7 or higher, or 0.8 or higher, or 0.9 or higher. The first ratio RA1 and the second ratio RA2 may be, for example, 1.1 or lower, or 1.2 or lower, or 1.3 or lower, or 1.4 or lower. The range of the first ratio RA1 and the second ratio RA2 may be determined by the first group containing 0.6, 0.7, 0.8 and 0.9, and / or the second group containing 1.1, 1.2, 1.3 and 1.4. The range of the first ratio RA1 and the second ratio RA2 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the first ratio RA1 and the second ratio RA2 may also be determined by a combination of any two values ​​contained in the first group. The ranges of the first ratio RA1 and the second ratio RA2 can also be determined by any combination of any two values ​​contained in the second group mentioned above. For example, the first ratio RA1 and the second ratio RA2 can be 0.6 to 1.4, 0.6 to 1.3, 0.6 to 1.2, 0.6 to 1.1, 0.6 to 0.9, 0.6 to 0.8, 0.6 to 0.7, 0.7 to 1.4, 0.7 to 1.3, 0.7 to 1.2, 0.7 to 1.1, 0.7 to 0.9, 0.7 to 0.8, or 0. The range can be 8 to 1.4, or 0.8 to 1.3, or 0.8 to 1.2, or 0.8 to 1.1, or 0.8 to 0.9, or 0.9 to 1.4, or 0.9 to 1.3, or 0.9 to 1.2, or 0.9 to 1.1, or 1.1 to 1.4, or 1.1 to 1.3, or 1.1 to 1.2, or 1.2 to 1.4, or 1.2 to 1.3, or 1.3 to 1.4.

[0202] The first configuration step S5(1) includes a position adjustment step S51(1), a determination step S52(1), and a fixing step S53(1). Figure 15 is a diagram showing the position adjustment step S51(1) and the determination step S52(1).

[0203] As shown in Figure 15, the position adjustment step S51(1) adjusts the position of the 11th mask 50A1 while tension is applied to it. The position adjustment step S51(1) uses the tensioning device 76 to adjust the position of the 11th mask 50A1. The tensioning device 76 can apply tension to the 11th mask 50A1 using clamps. The tensioning device 76 may include, for example, two clamps 761 mounted on the first end 51 and two clamps 761 mounted on the second end 51. By adjusting the position of each clamp 761, the position and tension of the 11th mask 50A1 can be adjusted.

[0204] The determination step S52(1) is to observe the position of the 11th mask 50A1 using the observation device 73. The determination step S52(1) is to determine whether the masking error of the 11th mask 50A1 is below the second threshold TH2. If the masking error exceeds the second threshold TH2, the position adjustment step S51(1) is performed again. If the masking error is below the second threshold TH2, the fixation step S53(1) is entered.

[0205] Figure 16 is a diagram showing the fixing step S53(1). Fixing step S53(1) is, for example, irradiating the end 51 of the 11th mask 50A1 with laser light. Thereby, a welded portion 47a is formed at the end 51. The 11th mask 50A1 is fixed to the first side 41 and the second side 42 via the welded portion 47a. As shown in Figure 16, the portion of the end 51 located further outward than the welded portion 47a can be removed. The portion of the end 51 located further outward than the welded portion 47a can be removed after the N masks 50 are mounted on the frame 40.

[0206] Next, as shown in FIG17, the second mask 50 is installed on the frame 40 in the second mask installation step S3(2). The second mask 50 is the 21st mask 50B1. The second mask installation step S3(2) includes the second adjustment step S4(2) and the second configuration step S5(2).

[0207] Next, as shown in FIG18, the third mask installation step S3(3) to the eighth mask installation step S3(8) are performed sequentially. Thereby, each mask 50 of the first mask group 50A and each mask 50 of the second mask group 50B are installed on the frame 40. The third mask installation step S3(3) to the eighth mask installation step S3(8) includes the third adjustment step S4(3) to the eighth adjustment step S4(8) and the third configuration step S5(3) to the eighth configuration step S5(8).

[0208] Next, as shown in FIG19, mask installation steps S3(9) to S3(10) are performed sequentially. Herein, each mask 50 of the central mask group 50C is installed on the frame 40. Mask installation steps S3(9) to S3(10) include adjustment steps S4(9) to S4(10) and configuration steps S5(9) to S5(10).

[0209] Next, the release step S6 is performed. For example, as shown in FIG20, the levers 621 of each pressing device of the pressing mechanism 62 are disengaged from the frame 40. Next, the final confirmation step S7 is performed. The final confirmation step S7 determines whether the difference between the final deformation amount of the first side 41 and the second side 42 and the target deformation amount is less than or equal to the first threshold TH1 mentioned above. If the difference is less than or equal to the first threshold TH1, the shielding device 15 is considered to be a qualified product.

[0210] Figure 21 is a diagram showing an example of the shift of the first pressing force P_A1 applied to the first side 41 by the 11th pressing device 62A1 in the first adjustment step S4(1) to the 10th adjustment step S4(10). As shown in Figure 21, the first pressing force P_A1 can be reduced between two or more adjustment steps S4. In the example shown in Figure 21, the first pressing force P_A1 is reduced between the second adjustment step S4(2) and the 7th adjustment step S4(7).

[0211] As shown in Figure 21, the first pressing force P_A1 can become zero before the final adjustment step S4, that is, before the 10th adjustment step S4(10). In the example shown in Figure 21, the first pressing force P_A1 becomes zero in the 7th adjustment step S4(7). The symbol P(11)_A1 refers to the first pressing force P_A1 when releasing step S6. The first pressing force P(11)_A1 is zero.

[0212] Figure 22 is a diagram showing an example of the shift of the first pressing force P_A2 applied to the first side 41 by the 12th pressing device 62A2 in the first adjustment step S4(1) to the 10th adjustment step S4(10). As shown in Figure 22, the first pressing force P_A2 can be reduced between two or more adjustment steps S4. In the example shown in Figure 22, the first pressing force P_A2 is reduced between the 4th adjustment step S4(4) to the 9th adjustment step S4(9). The period of reduction of the first pressing force P_A2 can occur after the period of reduction of the first pressing force P_A1.

[0213] As shown in Figure 22, the first pressing force P_A2 can become zero before the final adjustment step S4, that is, before the 10th adjustment step S4(10). In the example shown in Figure 22, the first pressing force P_A2 becomes zero in the 9th adjustment step S4(9). The first pressing force P_A2 can become zero after the first pressing force P_A1 becomes zero. The symbol P(11)_A2 refers to the first pressing force P_A2 when releasing step S6. The first pressing force P(11)_A2 is zero.

[0214] Figure 23 is a diagram showing an example of the shift of the first pressing force P_C1 applied to the first side 41 by the first central pressing device 62C1 in the first adjustment step S4(1) to the tenth adjustment step S4(10). As shown in Figure 23, the first pressing force P_C1 can be reduced between two or more adjustment steps S4. In the example shown in Figure 23, the first pressing force P_C1 is reduced between the sixth adjustment step S4(6) and the tenth adjustment step S4(10). The period of reduction of the first pressing force P_C1 can occur after the period of reduction of the first pressing force of the pressing device of the first group 62A.

[0215] As shown in Figure 23, the first pressing force P_C1 can be greater than zero in the final adjustment step S4, that is, in the Nth adjustment step S4(N). The symbol P(11)_C1 refers to the first pressing force P_C1 when releasing step S6. The first pressing force P(11)_C1 is zero.

[0216] The first pressing force P_C1 can display its maximum value during the U-th adjustment step S4(U) (U is an integer greater than 1 and less than N). This suppresses the difference between the deformation amount in the central measuring group 61C and the target deformation amount. In the example shown in Figure 23, the first pressing force P_C1 displays its maximum value during the 6th adjustment step S4(6). In the U-th adjustment step S4(U), the first central pressing device 62C1 applies the first pressing force P(U)_C1 to the first side 41. The equation U≧N / 2 holds true. That is, the first pressing force P_C1 can display its maximum value in the latter half of the adjustment step S4.

[0217] The ratio of the first pressing pressure P(U)_C1 to the first pressing pressure P(1)_C1 can be, for example, 1.05 or more, 1.10 or more, or 1.15 or more. The ratio of the first pressing pressure P(U)_C1 to the first pressing pressure P(1)_C1 can be, for example, 1.20 or less, 1.30 or less, or 1.50 or less. The first pressing pressure P(1)_C1 is the first pressing pressure applied to the first side 41 by the first central pressing device 62C1 in the first adjustment step S4(1).

[0218] The range of the ratio of the first pressing pressure P(U)_C1 to the first pressing pressure P(1)_C1 can be determined by a first group containing 1.05, 1.10, and 1.15, and / or a second group containing 1.20, 1.30, and 1.50. The range of the ratio of the first pressing pressure P(U)_C1 to the first pressing pressure P(1)_C1 can also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the ratio of the first pressing pressure P(U)_C1 to the first pressing pressure P(1)_C1 can also be determined by a combination of any two values ​​contained in the first group. The range of the ratio of the first pressing pressure P(U)_C1 to the first pressing pressure P(1)_C1 can also be determined by a combination of any two values ​​contained in the second group. For example, the ratio of the first pressing pressure P(U)_C1 to the first pressing pressure P(1)_C1 can be 1.05 or more and 1.50 or less, or 1.05 or more and 1.30 or less, or 1.05 or more and 1.20 or less, or 1.05 or more and 1.15 or less, or 1.05 or more and 1.10 or less, or 1.10 or more and 1.50 or less, or 1.10 or more and 1.30 or less, or 1.10 or more and 1.20 or less, or 1.10 or more and 1.15 or less, or 1.15 or more and 1.50 or less, or 1.15 or more and 1.30 or less, or 1.15 or more and 1.20 or less, or 1.20 or more and 1.50 or less, or 1.20 or more and 1.30 or more and 1.30 or less.

[0219] The movement of the first pressing force P_A1 shown in Figure 21 can also be achieved in the 21st pressing device 62B1. The movement of the first pressing force P_A2 shown in Figure 22 can also be achieved in the 22nd pressing device 62B2. The movement of the first pressing force P_C1 shown in Figure 23 can also be achieved in the second central pressing device 62C2.

[0220] As described above, the pressing mechanism 62 of the manufacturing apparatus 60 includes five or more pressing devices arranged at intervals of 500 mm or less along the second direction D2, which press the first side 41. Therefore, the deformation of the first side 41 at each position can be precisely adjusted. In this way, even when the frame 40 is enlarged, the tension applied by the first side 41 to each shield 50 can be prevented from deviating from the target tension.

[0221] As described above, the displacement measuring mechanism 61 of the manufacturing apparatus 60 is equipped with five or more displacement gauges that measure the deformation of the first side 41 at a position 100 mm or less from the pressing device in the second direction. Therefore, the deformation at each position of the first side 41 can be precisely adjusted. In this way, even when the frame 40 is enlarged, the tension applied by the first side 41 to each shield 50 can be prevented from deviating from the target tension.

[0222] A disassembly method for removing the cover 50 from the cover device 15 can be implemented. The disassembly method involves applying pressure to the first side 41 and the second side 42 while removing the cover 50 from the frame 40. In this way, the cover 50 can be removed from the frame 40 while maintaining the deformation of the frame 40. Furthermore, the first pressing pressure applied to the frame 40 in the manufacturing method of the cover device 15 can be inferred. The disassembly method can be implemented using the displacement measuring mechanism 61, the pressing mechanism 62, and the control device 63 of the manufacturing apparatus 60 described above. The pressing pressure applied to the first side 41 and the second side 42 by the pressing mechanism 62 in the disassembly method of the cover device 15 is also referred to as the second pressing pressure.

[0223] Figure 24 is a flowchart illustrating one example of the decomposition method. First, a masking device 15 is prepared (step RS1). The masking device 15 can be placed on a platform not shown. Next, the reference position of the frame 40 is determined (step RS2). Specifically, the final deformation of the first side 41 and the second side 42 of the frame 40 is measured using a displacement measuring mechanism 61. The final deformation of the first side 41 and the second side 42 is calculated based on the straight lines L11 and L12 connecting angle 46.

[0224] Next, a mask removal step RS3 is performed to sequentially remove N mask pieces 50 from the frame 40. The step of removing the m-th mask (m is an integer between 1 and N) from the frame 40 is also referred to as the m-th mask removal step RS3(m). The mask removal step RS3 includes N steps from the first mask removal step RS3(1) to the Nth mask removal step RS3(N).

[0225] As shown in Figure 24, the mask removal step RS3 is a removal step RS4 and a reverse adjustment step RS5 repeated N times. The removal step and the reverse adjustment step in the m-th mask removal step RS3(k) are also called the m-th removal step RS4(m) and the m-th reverse adjustment step RS5(m).

[0226] Step RS4 involves removing the mask 50 from the frame 40. For example, the mask 50 is cut off. In this way, the reaction force received by the first side 41 and the second side 42 from the mask 50 is almost zero.

[0227] The reverse adjustment step RS5 is performed after the removal step RS5, adjusting the second pressing force applied by the pressing mechanism 62 to the first side 41 and the second side 42 in the direction toward the opening 45. Specifically, the reverse adjustment step RS5 adjusts the second pressing force in such a way that the deformation of the first side 41 and the second side 42 after each cover 50 is removed from the first side 41 and the second side 42 becomes the final deformation amount.

[0228] In the following description, the symbol RP(m) is sometimes used to represent the second pressing force applied to the first side 41 in the m-th reverse adjustment step RS5(m). Also, the symbols RP(m)_A1, RP(m)_A2, RP(m)_B1, RP(m)_B2, RP(m)_C1, and RP(m)_C2 are sometimes used to represent the second pressing force applied to the first side 41 by the 11th pressing device 62A1, the 12th pressing device 62A2, the 21st pressing device 62B1, the 22nd pressing device 62B2, the first central pressing device 62C1, and the second central pressing device 62C2 in the m-th reverse adjustment step RS5(m).

[0229] Sometimes the symbol RP(m)_A is used to represent the average value of the second pressing force applied to the first side 41 by the pressing device of the first group 62A in the m-th reverse adjustment step RS5(m). Sometimes the symbol RP(m)_B is used to represent the average value of the second pressing force applied to the first side 41 by the pressing device of the second group 62B in the m-th reverse adjustment step RS5(m). Sometimes the symbol RP(m)_C is used to represent the average value of the second pressing force applied to the first side 41 by the pressing device of the central group 62C in the m-th reverse adjustment step RS5(m).

[0230] Figure 25 is a flowchart showing an example of the removal step RS4 and the reverse adjustment step RS5. The m-th removal step RS4(m) may include the cutting step RS41(m). The cutting step RS41(m) cuts off the m-th mask 50.

[0231] The reverse adjustment step RS5 may include a pressing step RS51(m), a judgment step RS52(m), and a recording step RS53(m). The pressing step RS51(m) is performed after the cutting step RS41(m) to adjust the second pressing force RP(m) on the frame 40. The judgment step RS52(m) determines whether ΔRd(m) is below the third threshold TH3. ΔRd(m) is the absolute value of the difference between the deformation amount Rd(m) of the first side 41 at the time of pressing step RS51(m) and the final deformation amount. Similar to the judgment step S42(k) above, the judgment step RS52(m) can determine whether ΔRd(m) is below the third threshold TH3 based on the deformation amount measured by the first central displacement gauge 61C1. The judgment step RS52(m) can also determine whether ΔRd(m) is below the third threshold TH3 based on the measured values ​​of multiple deformation amounts. Similar to the determination step S42(k) described above, the determination step RS52(m) can determine whether ΔRd(m) is below the third threshold TH3 for each of the measured values ​​of deformation in each displacement gauge of the displacement measuring mechanism 61. The numerical range of the third threshold TH3 can be the numerical range of the first threshold TH1 described above.

[0232] The recording step RS53(m) is the recording of the second pressing pressure RP(m) when ΔRd(m) is below the third threshold TH3.

[0233] As shown in Figure 24, the release step RS6 can be performed after the mask removal step RS3. The release step RS6 is to reduce the second pressing force on the frame 40 to zero. For example, the levers 621 of each pressing device of the pressing mechanism 62 are removed from the frame 40.

[0234] Refer to Figures 20 and 26 to 29 for a detailed explanation of the disassembly method of the masking device 15.

[0235] As shown in FIG20, with N masks 50 fixed on the frame 40, the final deformation of the first side 41 and the second side 42 is measured using the displacement measuring mechanism 61. Then, the mask removal step RS3, which removes the N masks 50 from the frame 40, is performed. In this embodiment, an example of removing the masks 50 from the frame 40 in the order closer to the center of the frame 40 in the second direction D2 will be described. Specifically, the central first mask 50C1, the central second mask 50C2, the 14th mask 50A4, the 24th mask 50B4, the 13th mask 50A3, the 23rd mask 50B3, the 12th mask 50A2, the 22nd mask 50B2, the 11th mask 50A1, and the 21st mask 50B1 are removed sequentially from the first side 41 and the second side 42.

[0236] The first mask installation step RS3(1) is performed to remove the first mask 50 from the frame 40. The first mask 50 is the central first mask 50C1. The first mask removal step RS3(1) includes the first removal step RS4(1) and the first reverse adjustment step RS5(1).

[0237] Figure 26 is a diagram showing the first removal step RS4(1) and the first reverse adjustment step RS5(1). The first removal step RS4(1) includes a cutting step RS41(1). As shown in Figure 26, the cutting step RS41(1) cuts off the central first mask 50C1. The end 51 of the central first mask 50C1 may remain in the frame 40.

[0238] The first reverse adjustment step RS5(1) includes a pressing step RS51(1), a judgment step RS52(1) and a recording step RS53(1).

[0239] As shown in Figure 26, pressing step RS51(1) is performed after removing the central first shield 50C1, pressing the first side 41 and the second side 42. The control device 63 controls the pressing mechanism 62 in such a way that the deformation of the first side 41 and the second side 42 becomes the final deformation.

[0240] The determination step RS52(1) determines whether ΔRd(1) is below the third threshold TH3. When ΔRd(1) exceeds the third threshold TH3, the pressing step RS51(1) is performed again. When ΔRd(1) is below the third threshold TH3, the recording step RS53(1) is entered. The recording step RS53(1) records the second pressing force applied by the pressing device of the pressing mechanism 62 to the first side 41 and the second side 42 as the second pressing force RP(1).

[0241] Next, as shown in FIG27, the second mask removal step RS3(2) is performed to remove the second mask 50 from the frame 40. The second mask 50 is the central second mask 50C2. The second mask removal step RS3(2) includes a second removal step RS4(2) and a second reverse adjustment step RS5(2). In this manner, each mask 50 of the central mask group 50C is removed from the frame 40.

[0242] Then, as shown in FIG28, the third mask removal step RS3(3) to the eighth mask removal step RS3(8) are performed sequentially. The third mask removal step RS3(3) to the eighth mask removal step RS3(8) includes the third removal step RS4(3) to the eighth removal step RS4(8) and the third configuration reverse adjustment step RS5(3) to the eighth reverse adjustment step RS5(8).

[0243] Then, as shown in FIG29, the 9th mask removal step RS3(9) to the 10th mask removal step RS3(10) are performed sequentially. The 9th mask removal step RS3(9) to the 10th mask removal step RS3(10) include the 9th removal step RS4(9) to the 10th removal step RS4(10) and the 9th reverse adjustment step RS5(9) to the 10th reverse adjustment step RS5(10).

[0244] Next, the release step RS6 is performed. For example, the levers 621 of each pressing device of the pressing mechanism 62 are disengaged from the frame 40.

[0245] Figure 30 is a diagram showing an example of the shift of the second pressing force RP_A1 applied to the first side 41 by the 11th pressing device 62A1 in the first reverse adjustment step RS5(1) to the 10th reverse adjustment step RS5(10). As shown in Figure 30, the second pressing force RP_A1 can be increased between two or more reverse adjustment steps RS5. In the example shown in Figure 30, the second pressing force RP_A1 is increased between the fourth reverse adjustment step RS5(4) to the 9th adjustment step RS5(9).

[0246] As shown in Figure 30, the second pressing pressure RP_A1 can become greater than zero starting from the reverse adjustment step RS5 after the second time. In the example shown in Figure 30, the second pressing pressure RP_A1 becomes greater than zero in the fifth adjustment step RS5(5).

[0247] Figure 31 is a diagram showing an example of the shift of the second pressing force RP_A2 applied to the first side 41 by the 12th pressing device 62A2 in the first reverse adjustment step RS5(1) to the 10th reverse adjustment step RS5(10). As shown in Figure 31, the second pressing force RP_A2 can be increased between two or more reverse adjustment steps RS5. In the example shown in Figure 31, the second pressing force RP_A2 is increased between the second reverse adjustment step RS5(2) to the 7th reverse adjustment step RS5(7).

[0248] As shown in Figure 31, the second pressing pressure RP_A2 can become greater than zero starting from the reverse adjustment step RS5 after the second time. In the example shown in Figure 31, the second pressing pressure RP_A2 becomes greater than zero in the third adjustment step RS5 (3). The second pressing pressure RP_A2 can become greater than zero before the second pressing pressure RP_A1 becomes greater than zero.

[0249] Figure 32 is a diagram showing an example of the shift of the second pressing force RP_C1 applied by the first central pressing device 62C1 to the first side 41 in the first reverse adjustment step RS5(1) to the tenth reverse adjustment step RS5(10). As shown in Figure 32, the second pressing force RP_C1 can be increased between the second and subsequent reverse adjustment steps RS5. In the example shown in Figure 32, the second pressing force RP_C1 is increased between the first reverse adjustment step RS5(1) to the fifth reverse adjustment step RS5(5). The period of increase of the second pressing force RP_C1 can occur before the period of increase of the second pressing force of the pressing device of the first group 62A.

[0250] As shown in Figure 32, the second pressing pressure RP_C1 can become greater than zero during the first reverse adjustment step RS5(1).

[0251] The second pressing force RP_C1 can display its maximum value during the Qth reverse adjustment step RS5(Q) (Q is an integer greater than 1 and less than N). In the example shown in Figure 32, the second pressing force RP_C1 can display its maximum value during the 5th reverse adjustment step RS5(5). The equation Q≦N / 2 is valid. That is, the second pressing force RP_C1 can display its maximum value in the first half of the reverse adjustment step RS5.

[0252] During the final reverse adjustment step RS5, that is, during the Nth reverse adjustment step RS5(N), the first central pressing device 62C1 applies the second pressing force RP(N)_C1 to the first side 41.

[0253] The ratio of the second pressing pressure RP(Q)_C1 to the second pressing pressure RP(N)_C1 can be, for example, 1.05 or more, 1.10 or more, or 1.15 or more. The ratio of the second pressing pressure RP(Q)_C1 to the second pressing pressure RP(N)_C1 can be, for example, 1.20 or less, 1.30 or less, or 1.50 or less. The second pressing pressure RP(Q)_C1 is the second pressing pressure applied to the first side 41 by the first central pressing device 62C1 in the Q reverse adjustment step RS5(Q).

[0254] The range of the ratio of the second pressing pressure RP(Q)_C1 to the second pressing pressure RP(N)_C1 can be determined by the first group containing 1.05, 1.10, and 1.15, and / or the second group containing 1.20, 1.30, and 1.50. The ratio of the second pressing pressure RP(Q)_C1 to the second pressing pressure RP(N)_C1 can also be determined by a combination of any value contained in the first group and any value contained in the second group. The ratio of the second pressing pressure RP(Q)_C1 to the second pressing pressure RP(N)_C1 can also be determined by a combination of any two values ​​contained in the first group. The ratio of the second pressing pressure RP(Q)_C1 to the second pressing pressure RP(N)_C1 can also be determined by a combination of any two values ​​contained in the second group. For example, the ratio of the second pressing pressure RP(Q)_C1 to the second pressing pressure RP(N)_C1 can be 1.05 to 1.50 or less, or 1.05 to 1.30 or less, or 1.05 to 1.20 or less, or 1.05 to 1.15 or less, or 1.05 to 1.10 or less, or 1.10 to 1.50 or less, or 1.10 to 1.30 or less, or 1.10 to 1.20 or less, or 1.10 to 1.15 or less, or 1.15 to 1.50 or less, or 1.15 to 1.30 or less, or 1.15 to 1.20 or less, or 1.20 to 1.50 or less, or 1.20 to 1.30 or less, or 1.30 to 1.50 or less.

[0255] The movement of the second pressing force RP_A1 shown in Figure 30 can also be achieved in the 21st pressing device 62B1. The movement of the second pressing force RP_A2 shown in Figure 31 can also be achieved in the 22nd pressing device 62B2. The movement of the second pressing force RP_C1 shown in Figure 32 can also be achieved in the second central pressing device 62C2.

[0256] The control device 63 can control the pressing mechanism 62 in the Nth reverse adjustment step RS5(N) such that the difference in the second pressing force applied to the first side 41 by each pressing device of the pressing mechanism 62 is within a specified range. For example, the control device 63 can control the pressing mechanism 62 in such a way that the third ratio RA3 and the fourth ratio RA4 are below a specified value. The third ratio RA3 is the ratio of the average second pressing force RP(N)_A of the first group 62A to the average second pressing force RP(N)_C of the central group 62C in the Nth reverse adjustment step RS5(N). The fourth ratio RA4 is the ratio of the average second pressing force RP(N)_B of the second group 62B to the average second pressing force RP(N)_C of the central group 62C in the Nth reverse adjustment step RS5(N). The average second pressing force RP(N)_A is the average value of the second pressing force applied to the first side 41 by the pressing device of the first group 62A in the Nth reverse adjustment step RS5(N). The average second pressing force RP(N)_B is the average value of the second pressing force applied to the first side 41 by the pressing device of the second group 62B in the Nth reverse adjustment step RS5(N). The average second pressing force RP(N)_C is the average value of the second pressing force applied to the first side 41 by the pressing device of the central group 62C in the Nth reverse adjustment step RS5(N).

[0257] The third ratio RA3 and the fourth ratio RA4 may be, for example, 0.6 or higher, 0.7 or higher, 0.8 or higher, or 0.9 or higher. The third ratio RA3 and the fourth ratio RA4 may be, for example, 1.1 or lower, 1.2 or lower, 1.3 or lower, or 1.4 or lower. The range of the third ratio RA3 and the fourth ratio RA4 may be determined by the first group containing 0.6, 0.7, 0.8 and 0.9, and / or the second group containing 1.1, 1.2, 1.3 and 1.4. The range of the third ratio RA3 and the fourth ratio RA4 may also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the third ratio RA3 and the fourth ratio RA4 may also be determined by a combination of any two values ​​contained in the first group. The ranges of the third ratio RA3 and the fourth ratio RA4 can also be determined by any combination of any two values ​​contained in the second group mentioned above. For example, the third ratio RA3 and the fourth ratio RA4 can be 0.6 to 1.4, 0.6 to 1.3, 0.6 to 1.2, 0.6 to 1.1, 0.6 to 0.9, 0.6 to 0.8, 0.6 to 0.7, 0.7 to 1.4, 0.7 to 1.3, 0.7 to 1.2, 0.7 to 1.1, 0.7 to 0.9, 0.7 to 0.8, or 0. The range can be 8 to 1.4, or 0.8 to 1.3, or 0.8 to 1.2, or 0.8 to 1.1, or 0.8 to 0.9, or 0.9 to 1.4, or 0.9 to 1.3, or 0.9 to 1.2, or 0.9 to 1.1, or 1.1 to 1.4, or 1.1 to 1.3, or 1.1 to 1.2, or 1.2 to 1.4, or 1.2 to 1.3, or 1.3 to 1.4.

[0258] Various modifications can be made to the above-described embodiment. Hereinafter, other embodiments will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the description, parts that can be constructed in the same way as those corresponding to the parts in the above-described embodiment are used with the same symbols. Repeated descriptions are omitted. Furthermore, when it is clear that the effects obtained in the above-described embodiment can also be obtained in other embodiments, such descriptions are sometimes omitted.

[0259] FIG33 is a top view of the masking device 15 according to the second embodiment. The masking device 15 has N masks 50 arranged along the second direction. N is an odd number. The masking device 15 shown in FIG33 has 9 masks 50.

[0260] The central mask group 50C includes one mask 50. Specifically, the central mask group 50C includes an 11th mask 50A1. The 11th mask 50A1 may overlap with the second center line Lc2.

[0261] The first mask group 50A includes one or more masks 50. The first mask group 50A may also include two or more masks 50. The first mask group 50A shown in Figure 33 includes the 11th mask 50A1, the 12th mask 50A2, the 13th mask 50A3 and the 14th mask 50A4 arranged sequentially in the direction from the third side 43 toward the second center line Lc2.

[0262] The second mask group 50B contains one or more masks 50. The second mask group 50B may also contain two or more masks 50. The number of masks 50 contained in the second mask group 50B may be the same as the number of masks 50 contained in the first mask group 50A. The second mask group 50B shown in Figure 33 contains the 21st mask 50B1, the 22nd mask 50B2, the 23rd mask 50B3 and the 24th mask 50B4 arranged sequentially in the direction from the fourth side 44 toward the second center line Lc2.

[0263] Figure 34 is a top view of the manufacturing apparatus 60 of the second embodiment.

[0264] The pressing mechanism 62 for pressing the first side 41 includes a central group 62C, a first group 62A, and a second group 62B. The central group 62C may include one pressing device. Specifically, the central group 62C includes a first central pressing device 62C1. The first central pressing device 62C1 may overlap with the second center line Lc2.

[0265] The first group 62A includes two or more pressing devices. In this embodiment, the first group 62A includes an eleventh pressing device 62A1 and a twelfth pressing device 62A2 arranged sequentially in the direction from the third side 43 toward the second center line Lc2.

[0266] The second group 62B includes two or more pressing devices. The number of pressing devices included in the second group 62B may be the same as the number of pressing devices included in the first group 62A. In this embodiment, the second group 62B includes a 21st pressing device 62B1 and a 22nd pressing device 62B2 arranged sequentially in the direction from the fourth side 44 toward the second center line Lc2.

[0267] The displacement measuring mechanism 61 for measuring the deformation of the first side 41 includes a central measuring group 61C, a first measuring group 61A, and a second measuring group 61B. The central measuring group 61C may include one displacement gauge. Specifically, the central measuring group 61C may include a first central displacement gauge 61C1. The first central displacement gauge 61C1 is located near the first central pressing device 62C1. The displacement measuring mechanism 61 may include a first auxiliary displacement gauge 61D and a second auxiliary displacement gauge 61E.

[0268] The first measuring group 61A includes two or more displacement gauges. In this embodiment, the first measuring group 61A includes an 11th displacement gauge 61A1 and a 12th displacement gauge 61A2 arranged sequentially in the direction from the third side 43 toward the second center line Lc2. The 11th displacement gauge 61A1 is located near the 11th pressing device 62A1. The 12th displacement gauge 61A2 is located near the 12th pressing device 62A2.

[0269] The second measurement group 61B includes two or more displacement gauges. In this embodiment, the second measurement group 61B includes a 21st displacement gauge 61B1 and a 22nd displacement gauge 61B2 arranged sequentially in the direction from the fourth side 44 toward the second center line Lc2. The 21st displacement gauge 61B1 is located near the 21st pressing device 62B1. The 22nd displacement gauge 61B2 is located near the 22nd pressing device 62B2.

[0270] The pressing devices of the pressing mechanism 62 are arranged at intervals of 500 mm or less along the second direction D2, similar to those in the above embodiment. Therefore, the deformation of the first side 41 at each position of the first side 41 can be precisely adjusted. In this way, even when the frame 40 is enlarged, the tension applied to each shield 50 by the first side 41 can be prevented from deviating from the target tension.

[0271] The displacement measuring mechanism 61, similar to that in the above embodiment, measures the deformation of the first side 41 at a position 100 mm or less from the pressing device in the second direction. Therefore, the deformation at each position of the first side 41 can be precisely adjusted. In this way, even when the frame 40 is enlarged, the tension applied to each shield 50 by the first side 41 can be prevented from deviating from the target tension.

[0272] Figure 35 is a top view of the manufacturing apparatus 60 according to the third embodiment. The displacement measuring mechanism 61 can measure the deformation of the first side 41 and the second side 42 without contacting the frame 40. The displacement measuring mechanism can be optical, eddy current, ultrasonic, laser focusing, or electrostatic capacitance type. The laser focusing type displacement measuring mechanism irradiates the frame 40 with laser light and detects the laser light reflected by the frame. The electrostatic capacitance type displacement measuring mechanism measures the electrostatic capacitance between the displacement measuring mechanism and the frame 40, and calculates the distance between the displacement measuring mechanism and the frame 40 based on the electrostatic capacitance.

[0273] FIG36 is a top view showing the manufacturing apparatus 60 of the fourth embodiment. The displacement measuring mechanism 61 may be supported by the moving mechanism 66. In this case, the displacement measuring mechanism 61 can measure the deformation of the first side 41 and the second side 42 without contacting the frame 40. The moving mechanism 66 moves the displacement measuring mechanism 61 along the first direction D1, the second direction D2, etc. For example, the moving mechanism 66 may include a first moving device 67 that moves the displacement measuring mechanism 61 along the first direction D1. The moving mechanism 66 may include a second moving device that moves the first moving device 67 along the second direction D2. By observing the frame 40 at multiple positions using the displacement measuring mechanism 61, the deformation of the first side 41 and the second side 42 can be measured.

[0274] In the above embodiment, an example of installing the mask 50 on the first side 41 and the second side 42 in the order of being farther from the center of the frame 40 in the second direction D2 was described. In the fifth embodiment, an example of installing the mask 50 on the first side 41 and the second side 42 in the order of being closer to the center of the frame 40 in the second direction D2 will be described. That is, in this embodiment, the mask 50 of the central mask group 50C is installed on the first side 41 and the second side 42 before the mask 50 of the first mask group 50A and the mask 50 of the second mask group 50B. When the distances from the center of the frame 40 in the second direction D2 are the same, the mask 50 located between the third side 43 and the second center line Lc2 is installed on the first side 41 and the second side 42 before the mask 50 located between the fourth side 44 and the second center line Lc2. Therefore, the central first mask 50C1, the central second mask 50C2, the fourteenth mask 50A4, the twenty-fourth mask 50B4, the thirteenth mask 50A3, the twenty-third mask 50B3, the twelfth mask 50A2, the twenty-second mask 50B2, the eleventh mask 50A1, and the twenty-first mask 50B1 are installed sequentially on the first side 41 and the second side 42.

[0275] First, the first mask 50 is installed on the frame 40 in the first mask installation step S3(1). The first mask 50 is the central first mask 50C1. The first mask installation step S3(1) includes the first adjustment step S4(1) and the first configuration step S5(1).

[0276] The first adjustment step S4(1) is the same as in the first embodiment described above, including a pressing step S41(1) and a determination step S42(1). The first configuration step S5(1) is the same as in the first embodiment described above, including a position adjustment step S51(1), a determination step S52(1), and a fixing step S53(1).

[0277] As shown in Figure 40, the position adjustment step S51(1) adjusts the position of the central first shield 50C1 while applying tension to the central first shield 50C1. The determination step S52(1) observes the position of the central first shield 50C1 using the observation device 73. The determination step S52(1) determines whether the shielding error of the central first shield 50C1 is below the second threshold TH2. If the shielding error exceeds the second threshold TH2, the position adjustment step S51(1) is performed again. If the shielding error is below the second threshold TH2, the fixing step S53(1) is entered. Figure 41 is a diagram showing the fixing step S53(1).

[0278] Next, as shown in FIG42, the second mask 50 is installed on the frame 40 in the second mask installation step S3(2). The second mask 50 is the central second mask 50C2. The second mask installation step S3(2) includes the second adjustment step S4(2) and the second configuration step S5(2).

[0279] Next, as shown in FIG43, the third mask installation step S3(3) to the eighth mask installation step S3(8) are performed sequentially. Thereby, the 14th mask 50A4, the 24th mask 50B4, the 13th mask 50A3, the 23rd mask 50B3, the 12th mask 50A2 and the 22nd mask 50B2 are installed sequentially on the frame 40. The third mask installation step S3(3) to the eighth mask installation step S3(8) includes the third adjustment step S4(3) to the eighth adjustment step S4(8) and the third configuration step S5(3) to the eighth configuration step S5(8).

[0280] Next, as shown in FIG44, mask installation steps S3(9) to S3(10) are performed sequentially. Thereby, mask 50A1 and mask 50B1 are installed sequentially on frame 40. Mask installation steps S3(9) to S3(10) include adjustment steps S4(9) to S4(10) and configuration steps S5(9) to S5(10).

[0281] Next, the release step S6 is performed. For example, the levers 621 of each pressing device of the pressing mechanism 62 are disengaged from the frame 40. Next, the final confirmation step S7 is performed. The final confirmation step S7 determines whether the difference between the final deformation amount of the first side 41 and the second side 42 and the target deformation amount is less than or equal to the first threshold TH1 mentioned above. When the difference is less than or equal to the first threshold TH1, the shielding device 15 is deemed to be a qualified product.

[0282] Figure 45 is a diagram showing an example of the shift of the first pressing force P_B1 applied to the first side 41 by the 21st pressing device 62B1 in the first adjustment step S4(1) to the 10th adjustment step S4(10). The 21st pressing device 62B1 is the pressing device closest to the fourth side 44 among the pressing devices of the second group 62B. As shown in Figure 45, the first pressing force P_B1 can be reduced between two or more adjustment steps S4. In the example shown in Figure 45, the first pressing force P_B1 is reduced between the 8th adjustment step S4(8) and the 10th adjustment step S4(10). The period of reduction of the first pressing force P_B1 can occur after the period of reduction of the first pressing force of the pressing device of the central group 62C.

[0283] As shown in Figure 45, the first pressing force P_B1 can become greater than zero in the final adjustment step S4, that is, in the Nth adjustment step S4(N). In the example shown in Figure 45, the final adjustment step S4 is the 10th adjustment step S4(10). The symbol P(11)_B1 refers to the first pressing force P_B1 when releasing step S6. The first pressing force P(11)_B1 is zero.

[0284] The first pressing force P_B1 can display its maximum value in the U-th adjustment step S4(U) (U is an integer greater than 1 and less than N). This suppresses the difference between the deformation amount in the second measurement group 61B and the target deformation amount. In the example shown in Figure 45, the first pressing force P_B1 displays its maximum value in the 8th adjustment step S4(8). In the U-th adjustment step S4(U), the 21st pressing device 62B1 applies the first pressing force P(U)_B1 to the first side 41. The equation U≧N / 2 holds. That is, the first pressing force P_B1 displays its maximum value in the latter half of the adjustment step S4.

[0285] The ratio of the first pressing pressure P(U)_B1 to the first pressing pressure P(1)_B1 can be, for example, 1.05 or more, 1.10 or more, or 1.15 or more. The ratio of the first pressing pressure P(U)_B1 to the first pressing pressure P(1)_B1 can be, for example, 1.20 or less, 1.30 or less, or 1.50 or less. The first pressing pressure P(1)_B1 is the first pressing pressure applied to the first side 41 by the 21st pressing device 62B1 in the first adjustment step S4(1).

[0286] The range of the ratio of the first pressing pressure P(U)_B1 to the first pressing pressure P(1)_B1 can be determined by a first group containing 1.05, 1.10, and 1.15, and / or a second group containing 1.20, 1.30, and 1.50. The range of the ratio of the first pressing pressure P(U)_B1 to the first pressing pressure P(1)_B1 can also be determined by a combination of any value contained in the first group and any value contained in the second group. The range of the ratio of the first pressing pressure P(U)_B1 to the first pressing pressure P(1)_B1 can also be determined by a combination of any two values ​​contained in the first group. The range of the ratio of the first pressing pressure P(U)_B1 to the first pressing pressure P(1)_B1 can also be determined by a combination of any two values ​​contained in the second group. For example, the ratio of the first pressing force P(U)_B1 to the first pressing force P(1)_B1 can be 1.05 or more and 1.50 or less, or 1.05 or more and 1.30 or less, or 1.05 or more and 1.20 or less, or 1.05 or more and 1.15 or less, or 1.05 or more and 1.10 or less, or 1.10 or more and 1.50 or less, or 1.10 or more and 1.30 or less, or 1.10 or more and 1.20 or less, or 1.10 or more and 1.15 or less, or 1.15 or more and 1.50 or less, or 1.15 or more and 1.30 or less, or 1.15 or more and 1.20 or less, or 1.20 or more and 1.50 or less, or 1.20 or more and 1.30 or more and 1.30 or less.

[0287] Figure 46 is a diagram showing an example of the shift of the first pressing force P_B2 applied to the first side 41 by the 22nd pressing device 62B2 in the first adjustment step S4(1) to the 10th adjustment step S4(10). As shown in Figure 46, the first pressing force P_B2 can be reduced between two or more adjustment steps S4. In the example shown in Figure 46, the first pressing force P_B2 is reduced between the 6th adjustment step S4(6) and the 8th adjustment step S4(8). The period of reduction of the first pressing force P_B2 can occur after the period of reduction of the first pressing force of the pressing device of the central group 62C. The period of reduction of the first pressing force P_B2 can occur before the period of reduction of the first pressing force P_B1.

[0288] As shown in Figure 46, the first pressing force P_B2 can become zero before the final adjustment step S4, that is, before the 10th adjustment step S4(10). In the example shown in Figure 46, the first pressing force P_B2 becomes zero in the 9th adjustment step S4(9). The first pressing force P_B2 can become zero before the first pressing force P_B1 becomes zero. The symbol P(11)_B2 refers to the first pressing force P_B2 when releasing step S6. The first pressing force P(11)_B2 is zero.

[0289] The first pressing force P_B2 can be displayed at its maximum value other than in the first adjustment step S4(1). This can suppress the difference between the deformation amount in the second measurement group 61B and the target deformation amount. In the example shown in FIG46, the first pressing force P_B2 is displayed at its maximum value in the second adjustment step S4(2). In the second adjustment step S4(2), the 22nd pressing device 62B2 applies the first pressing force P(2)_B2 to the first side 41. Although not shown, the first pressing force P_B2 can also be displayed at its maximum value in the third adjustment step S4(3) or the fourth adjustment step S4(4).

[0290] The range of the ratio of the maximum value of the first pressing force P_B2 to the first pressing force P(1)_B2 can be the range of the above-mentioned "ratio of the first pressing force P(U)_B1 to the first pressing force P(1)_B1".

[0291] Figure 47 is a diagram showing an example of the shift of the first pressing force P_C2 applied to the first side 41 by the second central pressing device 62C2 in the first adjustment step S4(1) to the tenth adjustment step S4(10). As shown in Figure 47, the first pressing force P_C2 can be reduced between two or more adjustment steps S4. In the example shown in Figure 47, the first pressing force P_C2 is reduced between the first adjustment step S4(1) and the seventh adjustment step S4(7). Thus, the first pressing force P_C2 can be monotonically reduced starting from the first adjustment step S4(1).

[0292] As shown in Figure 47, the first pressing force P_C2 can become zero before the final adjustment step S4, that is, before the 10th adjustment step S4(10). In the example shown in Figure 47, the first pressing force P_C2 becomes zero in the 7th adjustment step S4(7). The symbol P(11)_C2 refers to the first pressing force P_C2 when releasing step S6. The first pressing force P(11)_C2 is zero.

[0293] The movement of the first pressing force P_B1 shown in Figure 45 can also be achieved in the 11th pressing device 62A1. The movement of the first pressing force P_B2 shown in Figure 46 can also be achieved in the 12th pressing device 62A2. The movement of the first pressing force P_C2 shown in Figure 47 can also be achieved in the first central pressing device 62C1.

[0294] The control device 63 can control the pressing mechanism 62 in the first adjustment step S4(1) such that the difference between the first pressing forces applied to the first side 41 by each pressing device of the pressing mechanism 62 is within a specified range. For example, similar to the case of the first embodiment described above, the control device 63 can control the pressing mechanism 62 in such a way that the first ratio RA1 and the second ratio RA2 are below a specified value.

[0295] A disassembly method for removing the mask 50 from the masking device 15 can be implemented. The disassembly method for the masking device 15 will be specifically described with reference to Figures 44 and 48-49.

[0296] As shown in FIG44, with N masks 50 fixed on the frame 40, the final deformation of the first side 41 and the second side 42 is measured using the displacement measuring mechanism 61. Then, the mask removal step RS3, which removes the N masks 50 from the frame 40, is performed. In this embodiment, an example of removing the masks 50 from the frame 40 in the order of distance from the center of the frame 40 in the second direction D2, will be described. That is, in this embodiment, the masks 50 of the first mask group 50A and the masks 50 of the second mask group 50B are removed from the frame 40 before the masks 50 of the central mask group 50C. When the distances from the center of the frame 40 in the second direction D2 are the same, the mask 50 located between the fourth side 44 and the second center line Lc2 is removed from the frame 40 before the mask 50 located between the third side 43 and the second center line Lc2. Therefore, the 21st mask 50B1, the 11th mask 50A1, the 22nd mask 50B2, the 12th mask 50A2, the 23rd mask 50B3, the 13th mask 50A3, the 24th mask 50B4, the 14th mask 50A4, the central 2nd mask 50C2, and the central 1st mask 50C1 are removed from the frame 40 in sequence.

[0297] The first mask installation step RS3(1) is performed to remove the first mask 50 from the frame 40. The first mask 50 is the 21st mask 50B1. The first mask removal step RS3(1) is the same as in the above embodiment, including the first removal step RS4(1) and the first reverse adjustment step RS5(1).

[0298] Figure 48 is a diagram showing the first removal step RS4 (1) and the first reverse adjustment step RS5 (1). The first removal step RS4 (1) includes a cutting step RS41 (1). As shown in Figure 48, the cutting step RS41 (1) cuts off the 21st mask 50B1. The end 51 of the 21st mask 50B1 may remain in the frame 40.

[0299] The first reverse adjustment step RS5(1) includes a pressing step RS51(1), a judgment step RS52(1) and a recording step RS53(1).

[0300] As shown in Figure 48, pressing step RS51(1) is performed after removing the 21st mask 50B1, pressing the first side 41 and the second side 42. The control device 63 controls the pressing mechanism 62 in such a way that the deformation of the first side 41 and the second side 42 becomes the final deformation.

[0301] The determination step RS52(1) determines whether ΔRd(1) is below the third threshold TH3. When ΔRd(1) exceeds the third threshold TH3, the pressing step RS51(1) is performed again. When ΔRd(1) is below the third threshold TH3, the recording step RS53(1) is entered. The recording step RS53(1) records the second pressing force applied by the pressing device of the pressing mechanism 62 to the first side 41 and the second side 42 as the second pressing force RP(1).

[0302] Next, as shown in FIG49, the second mask removal step RS3(2) is performed to remove the second mask 50 from the frame 40. The second mask 50 is the 11th mask 50A1. The second mask removal step RS3(2) includes the second removal step RS4(2) and the second reverse adjustment step RS5(2).

[0303] Then, the third mask removal step RS3(3) to the tenth mask removal step RS3(10) are performed sequentially. The third mask removal step RS3(3) to the tenth mask removal step RS3(10) includes the third removal step RS4(3) to the tenth removal step RS4(10) and the third configuration reverse adjustment step RS5(3) to the tenth reverse adjustment step RS5(10).

[0304] Next, the release step RS6 is performed. For example, the levers 621 of each pressing device of the pressing mechanism 62 are disengaged from the frame 40.

[0305] Figure 50 is a diagram showing an example of the shift of the second pressing force RP_B1 applied to the first side 41 by the 21st pressing device 62B1 in the first reverse adjustment step RS5(1) to the 10th reverse adjustment step RS5(10). The 21st pressing device 62B1 is the pressing device closest to the fourth side 44 among the pressing devices of the second group 62B. As shown in Figure 50, the second pressing force RP_B1 can be increased between two or more reverse adjustment steps RS5. In the example shown in Figure 50, the second pressing force RP_B1 is increased between the first reverse adjustment step RS5(1) and the third reverse adjustment step RS5(3). The period of increase of the first pressing force P_B1 can occur before the period of increase of the first pressing force of the pressing device of the central group 62C.

[0306] As shown in Figure 50, the second pressing pressure RP_B1 can become greater than zero during the first reverse adjustment step RS5(1).

[0307] The second pressing force RP_B1 can display its maximum value during the Q-th reverse adjustment step RS5(Q) (Q is an integer greater than 1 and less than N). In the example shown in Figure 50, the second pressing force RP_B1 displays its maximum value during the third reverse adjustment step RS5(3). The equation Q≦N / 2 is valid. That is, the second pressing force RP_B1 can display its maximum value during the first half of the reverse adjustment step RS5.

[0308] At the final reverse adjustment step RS5, that is, at the Nth reverse adjustment step RS5(N), the 21st pressing device 62B1 applies the second pressing force RP(N)_B1 to the first side 41.

[0309] The ratio of the second pressing pressure RP(Q)_B1 to the second pressing pressure RP(N)_B1 can be, for example, 1.05 or more, 1.10 or more, or 1.15 or more. The ratio of the second pressing pressure RP(Q)_B1 to the second pressing pressure RP(N)_B1 can be, for example, 1.20 or less, 1.30 or less, or 1.50 or less. The second pressing pressure RP(Q)_B1 is the second pressing pressure applied to the first side 41 by the 21st pressing device 62B1 in the Q reverse adjustment step RS5(Q). As the numerical range of the ratio of the second pressing pressure RP(Q)_B1 to the second pressing pressure RP(N)_B1, the numerical range of the above-mentioned "ratio of the first pressing pressure P(U)_B1 to the first pressing pressure P(1)_B1" can be adopted.

[0310] Figure 51 is a diagram showing an example of the shift of the second pressing force RP_B2 applied to the first side 41 by the 22nd pressing device 62B2 in the first reverse adjustment step RS5(1) to the 10th reverse adjustment step RS5(10). As shown in Figure 51, the second pressing force RP_B2 can be increased between two or more reverse adjustment steps RS5. In the example shown in Figure 51, the second pressing force RP_B2 is increased between the second reverse adjustment step RS5(2) to the 7th reverse adjustment step RS5(5).

[0311] As shown in Figure 51, the second pressing pressure RP_B2 can become greater than zero starting from the reverse adjustment step RS5 after the second time. In the example shown in Figure 51, the second pressing pressure RP_B2 becomes greater than zero in the second adjustment step RS5(2). The second pressing pressure RP_B2 can become greater than zero after the second pressing pressure RP_B1 becomes greater than zero. The second pressing pressure RP_B2 can also become greater than zero before the second pressing pressure RP_C2, which will be described later, becomes greater than zero.

[0312] The second pressing force RP_B2 can display its maximum value other than the Nth reverse adjustment step RS5(N). In the example shown in FIG51, the second pressing force RP_B2 displays its maximum value during the 9th reverse adjustment step RS5(9). That is, the second pressing force RP_B2 displays its maximum value during the (N-1)th reverse adjustment step RS5(N-1). In the 9th reverse adjustment step RS5(9), the 22nd pressing device 62B2 applies the second pressing force P(9)_B2 to the first side 41. Although not shown, the second pressing force P_B2 can also display its maximum value during the (N-2)th reverse adjustment step RS5(N-2) or the (N-3)th reverse adjustment step RS5(N-3).

[0313] The range of the ratio of the maximum value of the second pressing force P_B2 to the second pressing force P(N)_B2 can be the range of the above-mentioned "ratio of the first pressing force P(U)_B1 to the first pressing force P(1)_B1".

[0314] Figure 52 is a diagram showing an example of the shift of the second pressing force RP_C2 applied to the first side 41 by the second central pressing device 62C2 in the first reverse adjustment step RS5(1) to the tenth reverse adjustment step RS5(10). As shown in Figure 52, the second pressing force RP_C2 can be increased between two or more reverse adjustment steps RS5. In the example shown in Figure 52, the second pressing force RP_C2 is increased between the sixth reverse adjustment step RS5(6) and the tenth adjustment step RS5(10).

[0315] The movement of the second pressing force RP_B1 shown in Figure 50 can be achieved in the eleventh pressing device 62A1. The movement of the second pressing force RP_B2 shown in Figure 51 can also be achieved in the twelfth pressing device 62A2. The movement of the second pressing force RP_C2 shown in Figure 52 can also be achieved in the first central pressing device 62C1.

[0316] The control device 63 can control the pressing mechanism 62 in the Nth reverse adjustment step RS5(N) such that the difference between the second pressing forces applied by each pressing device of the pressing mechanism 62 to the first side 41 is within a predetermined range. For example, similar to the case in the first embodiment described above, the control device 63 can control the pressing mechanism 62 such that the third ratio RA3 and the fourth ratio RA4 are below a predetermined value. [Example]

[0317] The embodiments of the present invention will be described in more detail below. The embodiments of the present invention are not limited to the description of the following embodiments as long as they do not exceed the spirit of the invention.

[0318] (Example 1) A masking device 15 is manufactured using a manufacturing apparatus 60. The main components of the masking device 15 and the manufacturing apparatus 60 are as follows: • Dimension G11 of frame 40: 1493.2 mm • Dimension G21 of frame 40: 2491.9 mm • Number of masking pieces N: 9 • Number of pressing devices pressing the first side 41: 5 • Spacing between two adjacent pressing devices in the second direction D2: 415 mm • Number of displacement gauges measuring the first side 41: 7 • Type of displacement gauge: Keyence contact digital sensor GT2-A12K • Spacing between two adjacent displacement gauges in the second direction D2: 415 mm

[0319] In Example 1, similar to the case of the first embodiment, the mask 50 is installed on the frame 40 in the order of being farther from the center of the frame 40 in the second direction D2. Figure 37 is a diagram showing the shift of the first pressing force applied to the first side 41 by each pressing device of the pressing mechanism 62 in the first adjustment step S4(1) to the ninth adjustment step S4(9). k=1 refers to the first adjustment step S4(1). k=9 refers to the ninth adjustment step S4(9). P_A1 is the first pressing force applied to the first side 41 by the 11th pressing device 62A1. P_A2 is the first pressing force applied to the first side 41 by the 12th pressing device 62A2. P_B1 is the first pressing force applied to the first side 41 by the 21st pressing device 62B1. P_B2 is the first pressing force applied to the first side 41 by the 22nd pressing device 62B2. P_C1 is the first pressing force applied to the first side 41 by the first central pressing device 62C1.

[0320] As shown in Figure 37, the first pressing force P_C1 of the first central pressing device 62C1 displays its maximum value during the sixth adjustment step S4(6). The ratio of the first pressing force P_C1 in the sixth adjustment step S4(6) to the first pressing force P_C1 in the first adjustment step S4(1) is 1.17.

[0321] After the kth fixed step (k), the deformation d(k) of the first side 41 is measured using the first central displacement gauge 61C1. Figure 39 shows the absolute value of the difference between the deformation d(k) and the target deformation.

[0322] (Example 2) A masking device 15 is manufactured using a manufacturing apparatus 60. The main components of the masking device 15 and the manufacturing apparatus 60 are as follows: • Dimension G11 of frame 40: 1493.2 mm • Dimension G21 of frame 40: 2491.9 mm • Number of masking pieces N: 9 • Number of pressing devices pressing the first side 41: 3 • Spacing between two adjacent pressing devices in the second direction D2: 695 mm • Number of displacement gauges measuring the first side 41: 5 • Type of displacement gauge: Keyence contact digital sensor GT2-A12K • Spacing between two adjacent displacement gauges in the second direction D2: 695 mm

[0323] In Example 2, similarly, the mask 50 is installed on the frame 40 in the order of being farther from the center of the frame 40 in the second direction D2. Figure 38 is a diagram showing the shift of the first pressing force applied to the first side 41 by each pressing device of the pressing mechanism 62 in the first adjustment step S4(1) to the ninth adjustment step S4(9). P_A1 is the first pressing force applied to the first side 41 by the 11th pressing device 62A1. P_B1 is the first pressing force applied to the first side 41 by the 21st pressing device 62B1. P_C1 is the first pressing force applied to the first side 41 by the first central pressing device 62C1.

[0324] After the kth fixed step (k), the deformation d(k) of the first side 41 is measured using the first central displacement gauge 61C1. Figure 39 shows the absolute value of the difference between the deformation d(k) and the target deformation.

[0325] (Example 3) A masking device 15 is manufactured using a manufacturing apparatus 60. The main components of the masking device 15 and the manufacturing apparatus 60 are as follows: • Dimension G11 of frame 40: 1105 mm • Dimension G21 of frame 40: 1701 mm • Number of masking pieces N: 6 • Number of pressing devices pressing the first side 41: 3 • Spacing between two adjacent pressing devices in the second direction D2: 475 mm • Number of displacement gauges measuring the first side 41: 5 • Type of displacement gauge: Keyence contact digital sensor GT2-A12K • Spacing between two adjacent displacement gauges in the second direction D2: 475 mm

[0326] In Example 3, similarly, the mask 50 is installed on the frame 40 in the order of being farther from the center of the frame 40 in the second direction D2. After the kth fixing step (k), the deformation d(k) of the first side 41 is measured using the first central displacement gauge 61C1. Figure 39 shows the absolute value of the difference between the deformation d(k) and the target deformation.

[0327] (Example 4) A masking device 15 is manufactured using a manufacturing apparatus 60. The main components of the masking device 15 and the manufacturing apparatus 60 are as follows: • Dimension G11 of frame 40: 1493.2 mm • Dimension G21 of frame 40: 2491.9 mm • Number of masking pieces N: 8 • Number of pressing devices pressing the first side 41: 5 • Spacing between two adjacent pressing devices in the second direction D2: 415 mm • Number of displacement gauges measuring the first side 41: 7 • Type of displacement gauge: Keyence contact digital sensor GT2-A12K • Spacing between two adjacent displacement gauges in the second direction D2: 415 mm

[0328] In Example 4, similarly to Example 1, the mask 50 is installed on the frame 40 in the order of being farther from the center of the frame 40 in the second direction D2. Figure 53 is a diagram showing the movement of the first pressing force applied to the first side 41 by each pressing device of the pressing mechanism 62 in the first adjustment step S4(1) to the eighth adjustment step S4(8).

[0329] As shown in Figure 53, the first pressing force P_C1 of the first central pressing device 62C1 displays its maximum value during the sixth adjustment step S4(6). The ratio of the first pressing force P_C1 in the sixth adjustment step S4(6) to the first pressing force P_C1 in the first adjustment step S4(1) is 1.17.

[0330] After the kth fixed step (k), the deformation d(k) of the first side 41 is measured using the first central displacement gauge 61C1. Figure 55 shows the absolute value of the difference between the deformation d(k) and the target deformation.

[0331] (Example 5) A masking device 15 is manufactured using a manufacturing apparatus 60. The main components of the masking device 15 and the manufacturing apparatus 60 are the same as in Example 4.

[0332] In Example 5, similar to the case of the 5th embodiment, the mask 50 is installed on the frame 40 in the order closer to the center of the frame 40 in the second direction D2. Figure 54 is a diagram showing the shift of the first pressing force applied to the first side 41 by each pressing device of the pressing mechanism 62 in the first adjustment step S4(1) to the eighth adjustment step S4(8).

[0333] As shown in Figure 54, the first pressing force P_B1 of the 21st pressing device 62B1 displays its maximum value during the 6th adjustment step S4(6). The ratio of the first pressing force P_B1 in the 6th adjustment step S4(6) to the first pressing force P_B1 in the 1st adjustment step S4(1) is 1.23.

[0334] After the kth fixed step (k), the deformation d(k) of the first side 41 is measured using the first central displacement gauge 61C1. Figure 55 shows the absolute value of the difference between the deformation d(k) and the target deformation. [Simplified Explanation of the Diagram]

[0010] Figure 1 is a cross-sectional view showing an example of an organic device. Figure 2 is a top view showing an example of an organic device group. Figure 3 is a cross-sectional view showing an example of a vapor deposition apparatus. Figure 4 is a top view showing an example of a masking device. Figure 5 is a top view showing the first side of the frame magnified. Figure 6 is a top view showing an example of a masking device. Figure 7 is a top view showing an example of a mask. Figure 8 is a cross-sectional view showing an example of a mask. Figure 9 is a block diagram showing an example of a masking device manufacturing apparatus. Figure 10 is a top view showing an example of a manufacturing apparatus. Figure 11 is a top view showing an example of a pressing device and a displacement gauge. Figure 12 is a flowchart showing an example of a masking device manufacturing method. Figure 13 is a flowchart showing an example of an adjustment step and a configuration step. Figure 14 is a top view showing an example of the first adjustment step. Figure 15 is a top view showing an example of the first configuration step. Figure 16 is a top view showing an example of the first configuration step. Figure 17 is a top view showing an example of the second mask installation step. Figure 18 is a top view showing an example of the third to eighth mask installation steps. Figure 19 is a top view showing an example of the ninth and tenth mask installation steps. Figure 20 is a top view showing an example of the release step. Figure 21 is a graph showing an example of the pressing force of the eleventh pressing device. Figure 22 is a graph showing an example of the pressing force of the twelfth pressing device. Figure 23 is a graph showing an example of the pressing force of the first central pressing device. Figure 24 is a flowchart showing an example of the mask device disassembly method. Figure 25 is a flowchart showing an example of the removal step and the reverse adjustment step. Figure 26 is a top view showing an example of the first removal step. Figure 27 is a top view showing an example of the second removal step. Figure 28 is a top view showing an example of the third to eighth removal steps. Figure 29 is a top view showing an example of the ninth and tenth removal steps. Figure 30 is a graph showing an example of the pressing force of the 11th pressing device. Figure 31 is a graph showing an example of the pressing force of the 12th pressing device. Figure 32 is a graph showing an example of the pressing force of the first central pressing device. Figure 33 is a top view showing an example of a shielding device. Figure 34 is a top view showing an example of a manufacturing apparatus. Figure 35 is a top view showing an example of a manufacturing apparatus. Figure 36 is a top view showing an example of a manufacturing apparatus. Figure 37 is a graph showing the 11th, 12th, 21st, 22nd, and first central pressing forces in Example 1. Figure 38 is a graph showing the 11th, 21st, and first central pressing forces in Example 2. Figure 39 is a graph showing the difference between the deformation amount and the target deformation amount of the frame in Examples 1 to 3. Figure 40 is a top view showing an example of the first shielding installation step of the fifth embodiment. Figure 41 is a top view showing an example of the first mask installation step in the fifth embodiment.Figure 42 is a top view showing an example of the second mask installation step in the fifth embodiment. Figure 43 is a top view showing an example of the third to eighth mask installation steps in the fifth embodiment. Figure 44 is a top view showing an example of the ninth and tenth mask installation steps in the fifth embodiment. Figure 45 is a graph showing an example of the pressing force of the 21st pressing device in the fifth embodiment. Figure 46 is a graph showing an example of the pressing force of the 22nd pressing device in the fifth embodiment. Figure 47 is a graph showing an example of the pressing force of the second central pressing device in the fifth embodiment. Figure 48 is a top view showing an example of the first removal step in the fifth embodiment. Figure 49 is a top view showing an example of the second removal step in the fifth embodiment. Figure 50 is a graph showing an example of the pressing force of the 21st pressing device in the fifth embodiment. Figure 51 is a graph showing an example of the pressing force of the 22nd pressing device in the fifth embodiment. Figure 52 is a graph showing one example of the pressing force of the second central pressing device in the fifth embodiment. Figure 53 is a graph showing the 11th, 12th, 21st, 22nd, and first central pressing forces in Example 4. Figure 54 is a graph showing the 11th, 12th, 21st, 22nd, and first central pressing forces in Example 5. Figure 55 is a graph showing the difference between the deformation amount and the target deformation amount of the frame in Examples 4 and 5.

Claims

1. A manufacturing apparatus for a masking device, the masking device comprising a frame and a mask, the frame including a first side and a second side facing each other in a first direction with an opening between them, and a third side and a fourth side facing each other in a second direction intersecting the first direction with the opening between them, the mask including an end fixed to the first side and the second side, the manufacturing apparatus comprising: a pressing mechanism for pressing the first side and the second side in a direction toward the opening; a displacement measuring mechanism for measuring the deformation of the first side and the second side in the first direction; and a fixing device for fixing the mask to the first side and the second side; the pressing mechanism comprising five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the first side, and five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the second side. The displacement measuring mechanism includes at least one displacement gauge for measuring the deformation of the first side. The displacement gauge includes a sensing head that contacts the first side. The displacement measuring mechanism includes: five or more displacement gauges that measure the deformation of the first side at a position less than 100 mm away from the pressing device in the second direction; a first auxiliary displacement gauge that measures the deformation of the first side at a position less than 200 mm away from the outer surface of the third side in the second direction; and a second auxiliary displacement gauge that measures the deformation of the first side at a position less than 200 mm away from the outer surface of the fourth side in the second direction.

2. The manufacturing apparatus of claim 1, wherein the displacement gauge measures the deformation of the first side at a position less than 100 mm away from the pressing device in the second direction.

3. The manufacturing apparatus of claim 1, wherein the distance between the first auxiliary displacement gauge and the second auxiliary displacement gauge in the second direction is 1300 mm or more.

4. The manufacturing apparatus of claim 1, wherein the distance in the first direction between the pressing device pressing the first side and the pressing device pressing the second side is 1300 mm or more.

5. The manufacturing apparatus of claim 1, wherein the masking device comprises N pieces (N being an integer greater than or equal to 2) of the mask arranged along a second direction, the manufacturing apparatus comprising a control device for controlling the pressing mechanism, the pressing mechanism pressing the first side and the second side in such a manner that the difference between the deformation amount when each mask is fixed to the first side and the target deformation amount is less than or equal to a first threshold.

6. The manufacturing apparatus of claim 5, wherein the fixing device fixes the cover to the first side and the second side in sequence from the center of the frame in the second direction, and the pressing mechanism for pressing the first side comprises: a central group comprising one or two pressing devices; a first group comprising two or more pressing devices located between the central group and the third side in the second direction; and a second group comprising two or more pressing devices located between the central group and the fourth side in the second direction; wherein the pressing device of the central group applies a first pressing force (1) to the first side when the first cover is fixed to the frame, and the pressing device of the central group applies a first pressing force (U) to the first side when the U-th cover (U is an integer greater than 1 and less than N) is fixed to the frame, and the ratio of the first pressing force (U) to the first pressing force (1) is 1.05 or more.

7. The manufacturing apparatus of claim 5, wherein the fixing device fixes the cover to the first side and the second side in the second direction in a sequence starting closer to the center of the frame; the pressing mechanism pressing the first side comprises: a central group comprising one or two pressing devices; a first group comprising two or more pressing devices located in the second direction between the central group and the third side; and a second group comprising two or more pressing devices located in the second direction between the central group and the fourth side; the pressing device belonging to the second group and closest to the fourth side applies a first pressing force (1) to the first side when fixing the first cover to the frame; the pressing device belonging to the second group and closest to the fourth side applies a first pressing force (U) to the first side when fixing the U-th cover (U is an integer greater than 1 and less than N) to the frame. The ratio of the first pressing force (U) to the first pressing force (1) is 1.05 or more.

8. The manufacturing apparatus of claim 6 or 7, wherein the control device controls the pressing mechanism in such a manner that the following formula holds: U≧N / 2.

9. A recording medium, which is a computer-readable non-transitory recording medium, recording a program that enables a computer to function as the control device of the manufacturing apparatus described in claim 5.

10. A manufacturing method for a masking device, comprising: a step of preparing a frame, the frame including a first side and a second side facing each other in a first direction with an opening between them, and a third side and a fourth side facing each other in a second direction intersecting the first direction with the opening between them; an adjustment step of adjusting a first pressing force applied to the first side and the second side by a pressing mechanism in a direction toward the opening; and a fixing step of fixing an end of the mask to the first side and the second side; wherein the pressing mechanism includes five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the first side, and five or more pressing devices arranged at intervals of 500 mm or less along the second direction and pressing the second side; wherein the adjustment step adjusts the first pressing force based on information from a displacement measuring mechanism, the displacement measuring mechanism measuring the deformation of the first side and the second side in the first direction. The displacement measuring mechanism includes at least one displacement gauge for measuring the deformation of the first side. The displacement gauge includes a sensing head that contacts the first side. The displacement measuring mechanism includes: five or more displacement gauges that measure the deformation of the first side at a position less than 100 mm away from the pressing device in the second direction; a first auxiliary displacement gauge that measures the deformation of the first side at a position less than 200 mm away from the outer surface of the third side in the second direction; and a second auxiliary displacement gauge that measures the deformation of the first side at a position less than 200 mm away from the outer surface of the fourth side in the second direction.

11. The manufacturing method of claim 10, wherein the displacement gauge measures the deformation of the first side at a position less than 100 mm away from the pressing device in the second direction.

12. The manufacturing method of claim 10, wherein the masking device comprises N pieces (N is an integer greater than 2) of the mask arranged along the second direction, and the adjustment step is to adjust the first pressing force in such a way that the difference between the deformation amount of the first side when each mask is fixed to the first side and the target deformation amount is less than or equal to a first threshold.

13. The manufacturing method of claim 12, wherein the fixing step involves fixing the mask to the first side and the second side in sequence, starting from the side furthest from the center of the frame in the second direction; the pressing mechanism for pressing the first side comprises: a central group comprising one or two pressing devices; a first group comprising two or more pressing devices located between the central group and the third side in the second direction; and a second group comprising two or more pressing devices located between the central group and the fourth side in the second direction; wherein the pressing devices of the central group apply a first pressing force (1) to the first side when fixing the first mask to the frame; and the pressing devices of the central group apply a first pressing force (U) to the first side when fixing the U-th mask (U being an integer greater than 1 and less than N) to the frame. The ratio of the first pressing force (U) to the first pressing force (1) is 1.05 or more.

14. The manufacturing method of claim 12, wherein the fixing step involves fixing the mask to the first side and the second side in sequence from the center of the frame in the second direction, and the pressing mechanism for pressing the first side comprises: a central group comprising one or two pressing devices; a first group comprising two or more pressing devices located between the central group and the third side in the second direction; and a second group comprising two or more pressing devices located between the central group and the fourth side in the second direction; the pressing device belonging to the second group and closest to the fourth side applies a first pressing force (1) to the first side when fixing the first mask to the frame, and the pressing device belonging to the second group and closest to the fourth side applies a first pressing force (U) to the first side when fixing the U-th mask (U is an integer greater than 1 and less than N) to the frame. The ratio of the first pressing force (U) to the first pressing force (1) is 1.05 or more.

15. The manufacturing method of claim 13 or 14, wherein the above adjustment step is to adjust the first pressing force in such a way that the following formula holds true, U≧N / 2.

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