Pattern exposure apparatus, exposure method, and component manufacturing method

Abstract

The pattern exposure apparatus includes: an illumination unit that illuminates a spatial light modulation element having a large number of micromirrors, the micromirrors being driven to switch between an on and off state based on drawing data; and a projection unit that projects an image of a pattern corresponding to the drawing data onto a substrate using reflected light from the on-state micromirrors of the spatial light modulation element as an imaging beam. The pattern exposure apparatus also includes: a control unit that stores information related to angle changes in the imaging beam generated based on the distribution density of the on-state micromirrors of the spatial light modulation element, along with the drawing data, as recipe information; and an adjustment mechanism that, when driving the spatial light modulation element based on the recipe information to expose the pattern onto the substrate, adjusts the position or angle of at least one optical component in the illumination unit or the projection unit, or the angle of the spatial light modulation element, based on the angle change-related information.

Description

Technical Field

[0001] This invention relates to a pattern exposure apparatus, an exposure method, and a method for manufacturing electronic components, for exposing patterns for use in electronic components. This application claims priority based on Japanese Patent Application No. 2021-111514, filed on July 5, 2021, the contents of which are incorporated herein by reference. Prior Technology

[0002] In the past, during the lithography process for manufacturing electronic components (micro-components) including liquid crystal or organic EL display panels and semiconductor devices (integrated circuits, etc.), projection exposure apparatuses using a step-repetition method (so-called steppers) or projection exposure apparatuses using a step-scanning method (so-called scanning steppers (also called scanners)) were used. These exposure apparatuses project and expose the mask pattern of the electronic components onto a photosensitive layer coated on the surface of the substrate to be exposed (hereinafter referred to as the substrate), such as a glass substrate, semiconductor wafer, printed wiring substrate, or resin film.

[0003] Fabricating a mask substrate that permanently forms the mask pattern requires time and expense. Therefore, an exposure apparatus (for example, see Patent Document 1) is known to replace the mask substrate and use spatial light modulation elements (variable mask pattern generators) such as digital mirror devices (DMDs) with a large number of micromirrors that undergo minute displacements. In the exposure apparatus disclosed in Patent Document 1, for example, illumination light consisting of a 375 nm wavelength light from a laser diode (LD) and a 405 nm wavelength light from the LD mixed in a multimode fiber bundle is irradiated onto the digital mirror device (DMD). The reflected light from each of the numerous micromirrors, which are tilt-controlled, is projected onto the substrate via an imaging optical system and a microlens array.

[0004] The tilt angle of each micromirror in the DMD is set digitally, for example, 0° when closed (when reflected light is not incident on the imaging optical system) and 12° when open (when reflected light is incident on the imaging optical system). Since a large number of micromirrors are arranged in a matrix with a fixed spacing (e.g., less than 10 μm), they also function as optical diffraction gratings. Especially when projecting and exposing fine patterns for electronic components, the imaging state of the pattern may sometimes be degraded due to the wavelength of the illumination light directed towards the DMD and the effect of the DMD's diffraction grating (the generation direction or intensity distribution of the diffracted light). [Existing technical documents] [Patent Literature]

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-23748 Summary of the Invention

[0006] According to a first aspect of the present invention, a pattern exposure apparatus is provided, comprising: an illumination unit that illuminates a spatial light modulation element having a large number of micromirrors, the large number of micromirrors being driven to switch between an on state and an off state based on drawing data; and a projection unit that directs reflected light from the micromirrors in the on state of the spatial light modulation element as an imaging beam to project an image of a pattern corresponding to the drawing data onto a substrate, wherein the pattern exposure apparatus comprises: a control unit that stores information related to angle change of the imaging beam generated according to the distribution density of the micromirrors in the on state of the spatial light modulation element, together with the drawing data, as recipe information; and an adjustment mechanism that, when the spatial light modulation element is driven based on the recipe information to expose the pattern onto the substrate, adjusts the position or angle of at least one optical component in the illumination unit or the projection unit, or the angle of the spatial light modulation element, according to the information related to angle change.

[0007] According to a second aspect of the present invention, a pattern exposure apparatus is provided, comprising: a spatial light modulation element having a large number of micromirrors selectively driven based on drawing data; an illumination unit that illuminates the spatial light modulation element with illumination light at a predetermined incident angle; and a projection unit that projects reflected light from the selected on-state micromirrors of the spatial light modulation element as an imaging beam onto a substrate, wherein the pattern exposure apparatus projects and exposes a pattern corresponding to the drawing data onto the substrate, wherein the pattern exposure apparatus comprises: a telecentric error determination unit that, based on the distribution state of the on-state micromirrors of the spatial light modulation element, pre-determines the telecentric error generated in the imaging beam projected from the projection unit onto the substrate during the projection exposure of the pattern; and an adjustment mechanism that adjusts the position or angle of a portion of the optical components of the illumination unit or the projection unit to correct the telecentric error.

[0008] According to a third aspect of the present invention, a pattern exposure apparatus is provided, comprising: an illumination unit that illuminates a spatial light modulation element having a large number of micromirrors, the large number of micromirrors switching between an on state and an off state based on drawing data for pattern exposure; and a projection unit that directs reflected light from the on-state micromirrors of the spatial light modulation element as an imaging beam to project a pattern image corresponding to the drawing data onto a substrate, wherein the pattern exposure apparatus comprises: a measurement unit that measures the degree of asymmetry of the pattern image caused by the telecentric error of the imaging beam resulting from the distribution density of the micromirrors in the on-state of the spatial light modulation element; and an adjustment mechanism that, when the spatial light modulation element is driven based on the drawing data to expose the pattern image onto the substrate, adjusts the position or angle of at least one optical member in the illumination unit or the projection unit, or the angle of the spatial light modulation element, to reduce the measured asymmetry.

[0009] According to a fourth aspect of the present invention, a method for manufacturing an element is provided, which involves illuminating a spatial light modulation element having a large number of micromirrors that switch between an on and off state based on drawing data with illumination light from an illumination unit, and projecting an image of an element pattern corresponding to the drawing data onto a substrate by means of a projection unit that incident the reflected light from the micromirrors in the on state of the spatial light modulation element as an imaging beam, thereby forming an element pattern on the substrate. The method includes the following stages: a determination stage for determining the telecentric error of the imaging beam caused by the distribution state of the micromirrors in the on state of the spatial light modulation element, or the light intensity variation error of the imaging beam caused by the driving error of the micromirrors in the on state; and an adjustment stage for adjusting at least one optical component in the illumination unit or the projection unit, or the arrangement state of the spatial light modulation element, when the spatial light modulation element is driven based on the drawing data to expose the image of the element pattern onto the substrate, in order to reduce the determined telecentric error or the determined light intensity variation error.

[0010] According to a fifth aspect of the present invention, a method for manufacturing an electronic component is provided, wherein illumination light from an illumination unit is irradiated onto a spatial light modulation element having a large number of micromirrors that switch between on and off states based on drawing data, and a projection unit is used to project a pattern image of an electronic component corresponding to the drawing data onto a substrate by means of a projection unit that incident the reflected light from the micromirrors in the on state of the spatial light modulation element as an imaging beam, thereby forming an electronic component on the substrate, wherein the method for manufacturing the electronic component includes the following stage: the imaging generated by the diffraction effect caused by the distribution state of the micromirrors in the on state of the spatial light modulation element. The determination stage involves determining at least one of the following errors: telecentric error of the light beam, asymmetry error of the pattern image caused by the telecentric error, light intensity variation error of the imaging beam caused by the driving error of the micromirror in the open state, or telecentric error of the imaging beam caused by the driving error; and an adjustment stage involves adjusting the setting state of at least one optical component in the illumination unit or the projection unit, or the setting state of the spatial light modulation element, to reduce the at least one of the determined errors when driving the spatial light modulation element to expose the pattern image onto the substrate.

[0011] According to a sixth aspect of the present invention, an exposure method is provided, comprising: an illumination unit that illuminates a spatial light modulation element having a plurality of micromirrors, the plurality of micromirrors being driven to switch between an on state and an off state based on drawing data; and a projection unit that incident reflected light from the on-state micromirrors of the spatial light modulation element as an imaging beam and projects it onto a substrate, wherein the angle variation of the imaging beam generated based on the distribution of the on-state micromirrors of the spatial light modulation element is adjusted, and the light intensity variation of the imaging beam generated by the adjustment is adjusted. Simple Explanation of the Diagram

[0012] [Figure 1] is a perspective view showing the outline of the external structure of the pattern exposure device EX of this embodiment. [Figure 2] is a diagram showing an example of the configuration of the projection area IAn of DMD10 projected onto the substrate P by the projection units PLU of each of the plurality of exposure modules MU. [Figure 3] is a diagram illustrating the successive exposure status of the four specific projection areas IA8, IA9, IA10 and IA27 in Figure 2. [Figure 4] is an optical configuration diagram of the specific structure of two exposure modules MU18 and MU19 arranged along the X direction (scanning exposure direction) in the XZ plane. [Figure 5] is a schematic diagram showing the state of DMD10 and illumination unit PLU tilted at an angle θk in the XY plane. [Figure 6] is a diagram showing the imaging state of the micromirror of the DMD10 of the projection unit PLU. [Figure 7] is a schematic diagram of the MFE lens 108A, which serves as the optical integrator 108, as viewed from the exit surface side. [Figure 8] is a schematic diagram showing an example of the configuration relationship between the point light source SPF formed on the exit surface side of the lens element EL of the MFE lens 108A in Figure 7 and the exit end of the fiber bundle FBn. [Figure 9] is a schematic diagram showing the appearance of the light source image formed in the pupil Ep within the second lens system 118 of the projection unit PL shown in Figure 6. [Figure 10] is a schematic diagram showing the behavior of the illumination light (imaging beam) Sa in the optical path from the pupil Ep of the second lens group 118 shown in Figure 6 to the substrate P. [Figure 11] is a magnified perspective view of the state of a portion of the micromirror Ms of DMD10 when the power supply to the drive circuit of DMD10 is disconnected. [Figure 12] is a magnified perspective view of a portion of the mirror surface of the DMD10 when the micromirror Ms of the DMD10 is in the open and closed states. [Figure 13] shows a portion of the mirror surface of DMD10 as observed in the X'Y' plane, and shows the situation where only one row of micromirrors Ms arranged along the Y' direction is in the open state. [Fig. 14] is a diagram of the a-a' arrow section of the mirror surface of DMD10 in Fig. 12, observed from the X'Z plane. [Figure 15] is a schematic diagram in the X'Z plane showing the imaging state of the projection unit PLU on the reflected light (imaging beam) Sa from the isolated micromirror Msa as shown in Figure 13. [Figure 16] is a schematic diagram showing the point image intensity distribution Iea of ​​the diffracted image of the standard reflected light Sa from the isolated micromirror Msa in the pupil Ep. [Figure 17] is a diagram of a portion of the mirror surface of DMD10 as observed in the X'Y' plane, and also shows the situation where a large number of adjacent micromirrors Ms in the X' direction are simultaneously in the open state. [Fig. 18] is a diagram of the a-a' arrow section of the mirror surface of DMD10 in Fig. 16, viewed from the X'Z plane. [Figure 19] is a chart showing an example of the distribution of the angle θj of the diffracted light Idj generated by DMD10 in the states of Figures 17 and 18. [Figure 20] is a schematic diagram showing the intensity distribution of the imaging beam in the pupil Ep when the diffracted light is generated as shown in Figure 19. [Figure 21] is a diagram showing the state of a portion of the mirror surface of DMD10 when the projection of the line and gap pattern is observed in the X'Y' plane. [Fig. 22] is a diagram of the a-a' arrow portion of the mirror surface of DMD10 in Fig. 21 viewed in the X'Z plane, and is a diagram showing a modified example of the distribution portion of this embodiment. [Figure 23] is a chart showing an example of the distribution of the angle θj of the diffracted light Idj generated by DMD10 in the states of Figures 21 and 22. [Figure 24] is a graph showing the results of simulating the contrast of a spatial image of a line and gap pattern with a line width of 1 μm on the image plane. [Figure 25] is a graph showing the relationship between wavelength λ and telecentric error Δθt based on equation (2). [Figure 26] is a diagram showing the specific structure of the optical path from the fiber bundle FBn to the MFE108A in the illumination unit ILU shown in Figure 4 or Figure 6. [Figure 27] is a diagram showing the specific structure of the optical path from MFE108A to DMD10 in the illumination unit ILU shown in Figure 4 or Figure 6. [Figure 28] is an exaggerated representation of the state of the point light source SPF formed on the exit surface side of the MFE108A when the illumination light ILm incident on the MFE108A is tilted in the X'Z plane. [Figure 29] is a structural diagram of an example of a beam supply unit attached to the exposure apparatus EX shown in Figure 1, which supplies illumination light ILm to each module MUn (n=1~27). [Figure 30] is a schematic diagram showing the wavelength distribution of the beam LBb after the beams LB1 to LB7 from the seven laser light sources FL1 to FL7 are combined by the beam combining unit 200. [Figure 31] shows a portion of the mirror surface of DMD10 during exposure of a line and gap pattern that are tilted at 45° on substrate P. [Figure 32] is a block diagram showing a schematic example of a part of the exposure control device attached to the exposure apparatus EX of this embodiment, particularly related to the adjustment and control of telecentric error. [Figure 33] is a diagram showing an example of the configuration of the display area DPA and the surrounding areas PPAx and PPAy of a display panel exposed onto the substrate P by the exposure device EX. [Figure 34] is a diagram showing an example of the configuration of pixels PIX in the display area DPA within the projection area IAn (n=1~27). [Figure 35] is a schematic diagram showing the optical measurement section provided in the calibration reference section CU at the end of the substrate support 4B of the exposure apparatus EX shown in Figure 1. [Figure 36] is a schematic diagram showing the structure of one of the drawing modules provided in the pattern exposure device of the second embodiment. [Figure 37] is an exaggerated representation of the state of the micromirror Ms when an isolated minimum linewidth pattern is projected using DMD10' in Figure 36. [Figure 38] is a schematic diagram showing the point image intensity distribution Iea of ​​the diffracted image of the reflected light Sa from the isolated open state of the micromirror Msa as shown in Figure 37 in the pupil Ep. [Figure 39] is an exaggerated representation of the state of the micromirror Ms when a large island pattern is projected using DMD10' in Figure 36. [Figure 40] is a schematic diagram illustrating one example of the generation direction of the central rays of the 0th order diffracted light and ±1st order diffracted light contained in the reflected light Sa' in the state of Figure 39. Implementation

[0013] Hereinafter, preferred embodiments of the pattern exposure apparatus (pattern forming apparatus) of the present invention will be described in detail with reference to the drawings. However, the embodiments of the present invention are not limited to these embodiments, and include various modifications or improvements. That is, the constituent elements described below include those readily conceived by those skilled in the art and substantially the same, and the constituent elements described below can be appropriately combined. Furthermore, various omissions, substitutions, or changes to the constituent elements can be made without departing from the spirit of the present invention. In addition, throughout the drawings and the following detailed description, the same reference numerals are used for components or constituent elements that achieve the same or identical functions.

[0014] [Overall structure of the pattern exposure device] Figure 1 is a perspective view showing the outline of the external structure of the pattern exposure apparatus (hereinafter referred to as the exposure apparatus) EX of this embodiment. The exposure apparatus EX is a device that projects an exposure light image onto the substrate to be exposed by dynamically modulating the intensity distribution in space using a spatial light modulation element (digital mirror element: DMD). In a specific embodiment, the exposure apparatus EX is a projection exposure apparatus (scanner) that uses a rectangular (square) glass substrate used in display devices (flat panel displays) as the exposure object in a step-scan manner. The glass substrate is a flat panel display substrate P with at least one side length or diagonal length of 500 mm or more and a thickness of 1 mm or less. The exposure apparatus EX exposes the projected image of the pattern formed by the DMD onto a photosensitive layer (photoresist) formed on the surface of the substrate P with a fixed thickness. After exposure, the substrate P removed from the exposure apparatus EX is sent to a predetermined process step (film deposition step, etching step, plating step, etc.) after the development step.

[0015] The exposure apparatus EX includes a stage assembly comprising: a base 2 mounted on active vibration damping units 1a, 1b, 1c, and 1d (1d not shown); a fixed plate 3 mounted on the base 2; an XY stage 4A movable two-dimensionally on the fixed plate 3; a substrate support 4B held on the XY stage 4A to hold the substrate P on a plane; and laser length measuring interferometers (hereinafter also referred to as interferometers) IFX, IFY1 to IFY4 for measuring the two-dimensional movement of the substrate support 4B (substrate P). Such a stage assembly is disclosed, for example, in U.S. Patent Publication No. 2010 / 0018950 and U.S. Patent Publication No. 2012 / 0057140.

[0016] In Figure 1, the XY plane of the orthogonal coordinate system XYZ is set to be parallel to the flat surface of the fixed plate 3 of the stage device, and the XY stage 4A is set to be able to move in parallel within the XY plane. Furthermore, in this embodiment, the direction parallel to the X-axis of the coordinate system XYZ is set as the scanning movement direction of the substrate P (XY stage 4A) during scanning exposure. The movement position of the substrate P in the X-axis direction is measured successively by an interferometer IFX, and the movement position in the Y-axis direction is measured successively by at least one (preferably two) of four interferometers IFY1 to IFY4. The substrate support 4B is configured to be able to move slightly relative to the XY stage 4A along the Z-axis direction perpendicular to the XY plane, and to tilt slightly relative to the XY plane in any direction. The focus adjustment and leveling (parallelism) adjustment of the surface of the substrate P and the imaging surface of the projected pattern are actively performed. Furthermore, the substrate support 4B is configured to be able to rotate slightly (θz rotation) about an axis parallel to the Z-axis in order to actively adjust the tilt of the substrate P in the XY plane.

[0017] The exposure apparatus EX further includes an optical plate 5 that holds a plurality of exposure (drawing) modules MU(A), MU(B), and MU(C), and main pillars 6a, 6b, 6c, and 6d (6d not shown) that support the optical plate 5 from the base 2. Each of the plurality of exposure modules MU(A), MU(B), and MU(C) has an illumination unit ILU mounted on the +Z direction side of the optical plate 5 and into which illumination light from the fiber optic unit FBU is incident, and a projection unit PLU mounted on the -Z direction side of the optical plate 5 and having an optical axis parallel to the Z-axis. Furthermore, each of the exposure modules MU(A), MU(B), and MU(C) includes a digital mirror element (DMD) 10 that reflects the illumination light from the illumination unit ILU in the -Z direction and incident on the projection unit PLU. The detailed structure of the exposure module including the illumination unit ILU, DMD 10, and projection unit PLU will be described later.

[0018] On the -Z direction side of the optical plate 5 of the exposure apparatus EX, a plurality of alignment systems (microscopes) ALGs are mounted to detect alignment marks formed at predetermined positions on the substrate P. To confirm (correct) the relative positional relationship of the detection fields of each alignment system ALG in the XY plane, to confirm (correct) the baseline error between the projection positions of the pattern images projected by the projection units PLUs of each exposure module MU(A), MU(B), and MU(C) and the positions of the detection fields of each alignment system ALG, or to confirm the position or image quality of the pattern images projected by the projection units PLUs, a correction reference part CU is provided at the end of the substrate support 4B in the -X direction. Furthermore, although not shown in Figure 1, as an example, each of the exposure modules MU(A), MU(B), and MU(C) in this embodiment has 9 modules arranged at fixed intervals along the Y direction, but the number of modules may be less than 9 or more than 9.

[0019] Figure 2 shows an example of the arrangement of the projection area IAn of the digital mirror element (DMD) 10 projected onto the substrate P by the projection units PLU of each of the exposure modules MU(A), MU(B), and MU(C). The orthogonal coordinate system XYZ is set to be the same as in Figure 1. In this embodiment, the first row of exposure modules MU(A), the second row of exposure modules MU(B), and the third row of exposure modules MU(C), which are arranged separately along the X direction, each contain 9 modules arranged along the Y direction. Exposure module MU(A) contains 9 modules MU1 to MU9 arranged along the +Y direction, exposure module MU(B) contains 9 modules MU10 to MU18 arranged along the -Y direction, and exposure module MU(C) contains 9 modules MU19 to MU27 arranged along the +Y direction. Modules MU1 to MU27 all have the same structure. When exposure module MU(A) and exposure module MU(B) are set to be opposite each other with respect to the X direction, exposure module MU(B) and exposure module MU(C) are back to back with respect to the X direction.

[0020] In Figure 2, as an example, the projection areas IA1, IA2, IA3, ..., IA27 (where n is set to 1 to 27, or sometimes represented as IAn) of modules MU1 to MU27 are rectangles extending along the Y direction with an aspect ratio of approximately 1:2. In this embodiment, as the substrate P scans in the +X direction, the -Y direction ends of the first row projection areas IA1 to IA9 and the +Y direction ends of the second row projection areas IA10 to IA18 are successively exposed. Furthermore, the unexposed areas on the substrate P in each of the first and second row projection areas IA1 to IA18 are successively exposed by the third row projection areas IA19 to IA27. The center points of the first row of projection areas IA1~IA9 are located on line k1, which is parallel to the Y-axis. The center points of the second row of projection areas IA10~IA18 are located on line k2, which is parallel to the Y-axis. The center points of the third row of projection areas IA19~IA27 are located on line k3, which is parallel to the Y-axis. The distance between lines k1 and k2 in the X-direction is set to XL1, and the distance between lines k2 and k3 in the X-direction is set to XL2.

[0021] Here, when the connection between the end of projection area IA9 in the -Y direction and the end of projection area IA10 in the +Y direction is set as OLa, the connection between the end of projection area IA10 in the -Y direction and the end of projection area IA27 in the +Y direction is set as OLb, and the connection between the end of projection area IA8 in the +Y direction and the end of projection area IA27 in the -Y direction is set as OLc, the state of this continuous exposure is explained using FIG3. In FIG3, the orthogonal coordinate system XYZ is set as in FIG1 and FIG2, and the coordinate system X'Y' in projection areas IA8, IA9, IA10, IA27 (and all other projection areas IAn) is set to be tilted at an angle θk relative to the X-axis and Y-axis (lines k1~k3) of the orthogonal coordinate system XYZ. That is, the entire DMD10 is tilted at an angle θk in the XY plane so that the two-dimensional arrangement of the large number of micromirrors of DMD10 becomes the coordinate system X'Y'.

[0022] The circular region encompassing each of the projection regions IA8, IA9, IA10, IA27 (and all other projection regions IAn) in Figure 3 is represented as the circular image field PLf' of the projection unit PLU. In the connecting section OLa, the projected image of the micromirrors arranged at an angle (θk) at the -Y' end of projection region IA9 and the projected image of the micromirrors arranged at an angle (θk) at the +Y' end of projection region IA10 are set to overlap. Furthermore, in the connecting section OLb, the projected image of the micromirrors arranged at an angle (θk) at the -Y' end of projection region IA10 and the projected image of the micromirrors arranged at an angle (θk) at the +Y' end of projection region IA27 are set to overlap. Similarly, in the connecting part OLc, the projection image of the micromirrors arranged at an angle (θk) at the end of the projection area IA8 in the +Y' direction and the projection image of the micromirrors arranged at an angle (θk) at the end of the projection area IA27 in the -Y' direction are set to overlap.

[0023] [Structure of the lighting unit] Figure 4 is an optical configuration diagram of the specific structure of module MU18 in exposure module MU(B) and module MU19 in exposure module MU(C) shown in Figures 1 and 2, viewed in the XZ plane. The orthogonal coordinate system XYZ in Figure 4 is set to be the same as the orthogonal coordinate system XYZ in Figures 1 to 3. Furthermore, based on the configuration of each module in the XY plane shown in Figure 2, it is clear that module MU18 is offset from module MU19 by a fixed interval in the +Y direction, and they are arranged back-to-back. The optical components in module MU18 and the optical components in module MU19 are constructed of the same material and are similarly made. Therefore, the optical structure of module MU18 will be described in detail here. In addition, the fiber unit FBU shown in Figure 1 corresponds to each of the 27 modules MU1 to MU27 shown in Figure 2 and contains 27 fiber bundles FB1 to FB27.

[0024] The illumination unit ILU of module MU18 includes a mirror 100 that reflects the illumination light ILm emitted from the output end of fiber bundle FB18 in the -Z direction, a mirror 102 that reflects the illumination light ILm from mirror 100 in the -Z direction, an input lens system 104 that functions as a collimating lens, an illuminance adjustment filter 106, an optical integrator 108 including a micro-fly eye (MFE) lens or objective lens, a condenser lens system 110, and a tilting mirror 112 that reflects the illumination light ILm from the condenser lens system 110 towards DMD10. Mirror 102, input lens system 104, optical integrator 108, condenser lens system 110, and tilting mirror 112 are arranged along an optical axis AXc parallel to the Z-axis.

[0025] The fiber bundle FB18 is composed of a single fiber or a bundle of multiple fiber lines. The illumination light ILm emanating from the exit end of the fiber bundle FB18 (each fiber line) is set to a numerical aperture (NA, also known as the divergence angle) that will not be affected by vignetting from the input lens system 104. The position of the front focal point of the input lens system 104 is designed to be the same as the position of the exit end of the fiber bundle FB18. Furthermore, the position of the rear focal point of the input lens system 104 is set such that the illumination light ILm from one or more point sources formed at the exit end of the fiber bundle FB18 overlaps on the incident surface of the MFE lens 108A of the optical integrator 108. Therefore, the incident surface of the MFE lens 108A is Kohler illuminated by the illumination light ILm from the exit end of the fiber bundle FB18. Additionally, it is assumed that in the initial state, the geometric center point of the output end of the fiber bundle FB18 in the XY plane is located on the optical axis AXc, and the principal ray (center line) of the illumination light ILm from the point light source at the output end of the fiber line is parallel (or coaxial) with the optical axis AXc.

[0026] The illumination light ILm from the input lens system 104 is attenuated by the illuminance adjustment filter 106 to an arbitrary value within the range of 0% to 90%, and then enters the condenser lens system 110 through the optical integrator 108 (MFE lens 108A, objective lens, etc.). The MFE lens 108A is composed of a large number of rectangular microlenses of tens of μm square arranged in two dimensions, and its overall shape in the XY plane is set to be approximately similar to the overall shape of the mirror surface of the DMD 10 (with an aspect ratio of approximately 1:2). Furthermore, the position of the front focal point of the condenser lens system 110 is set to be approximately the same as the position of the exit surface of the MFE lens 108A. Therefore, the illumination light from the point light sources formed by the exit sides of the large number of microlenses of the MFE lens 108A is converted into approximately parallel beams by the condenser lens system 110, and after being reflected by the tilting mirror 112, they overlap on the DMD 10 to form a uniform illuminance distribution. A large number of point light sources (focusing points) are generated on the emission surface of the MFE lens 108A, forming a surface light source in a two-dimensional, tightly arranged manner, thus functioning as a surface light source component.

[0027] In the module MU18 shown in Figure 4, the optical axis AXc, which is parallel to the Z-axis, is bent by the tilting mirror 112 to reach the DMD10. The optical axis between the tilting mirror 112 and the DMD10 is set as the optical axis AXb. In this embodiment, the central plane of the center point of each of the numerous micromirrors containing the DMD10 is set to be parallel to the XY plane. Therefore, the angle between the normal of this central plane (parallel to the Z-axis) and the optical axis AXb becomes the incident angle θα of the illumination light ILm relative to the DMD10. The DMD10 is mounted on the lower side of the mounting part 10M, which is fixed to the support column of the illumination unit ILU. In the mounting part 10M, in order to fine adjust the position or orientation of the DMD10, for example, a micro-motion stage, which combines a parallel connection mechanism and a retractable piezoelectric element as disclosed in International Patent Publication No. 2006 / 120927, is provided.

[0028] The illumination light ILm of the micromirror in the open state, which is irradiated by the micromirror of the DMD10, is reflected in the X direction within the XZ plane, toward the projection unit PLU. On the other hand, the illumination light ILm of the micromirror in the closed state, which is irradiated by the micromirror of the DMD10, is reflected in the Y direction within the YZ plane, so that it does not face the projection unit PLU. Details will be described later, but in this embodiment, the DMD10 is configured to switch between the open and closed states by tilting the micromirror in the roll direction and tilting it in the pitch direction.

[0029] A movable light-shielding plate 114 is detachably provided in the optical path from DMD10 to projection unit PLU for blocking reflected light from DMD10 during non-exposure periods. As shown in the figure, the movable light-shielding plate 114 rotates to an angle position retracting from the optical path during exposure on the module MU19 side, and rotates to an angle position tilted into the optical path during non-exposure periods on the module MU18 side. A reflective surface is formed on the DMD10 side of the movable light-shielding plate 114, where reflected light from DMD10 irradiates the light absorber 116. The light absorber 116 absorbs ultraviolet light energy (wavelengths below 400 nm) without reflecting it back, converting it into heat energy. Therefore, a heat dissipation mechanism (heat dissipation fins or cooling mechanism) is also provided in the light absorber 116. In addition, although not shown in Figure 4, the reflected light from the micromirror of the DMD10, which is in the off state, is absorbed by the same light absorber (not shown in Figure 4) that is set in the Y direction (orthogonal to the plane of the paper in Figure 4) relative to the optical path between the DMD10 and the projection unit PLU.

[0030] [Structure of the projection unit] The projection unit PLU, mounted on the lower side of the optical plate 5, is configured as an imaging projection lens system comprising a first lens group 116 and a second lens group 118 arranged along the optical axis AXa parallel to the Z-axis, with telecentric imaging projection lens systems on both sides. The first lens group 116 and the second lens group 118 are configured to move in parallel relative to the support column fixed on the lower side of the optical plate 5 in the direction along the Z-axis (optical axis AXa) using micro-actuators. The projection magnification Mp of the imaging projection lens system comprising the first lens group 116 and the second lens group 118 is determined by the relationship between the arrangement spacing Pd of the micromirrors on the DMD 10 and the minimum linewidth (minimum pixel size) Pg of the pattern in the projection area IAn (n=1~27) projected onto the substrate P.

[0031] As an example, when the required minimum linewidth (minimum pixel size) Pg is 1 μm and the micromirror spacing Pd is 5.4 μm, the tilt angle θk of the projection area IAn (DMD10) in the XY plane, as described in Figure 3, is also considered, and the projection magnification Mp is set to approximately 1 / 6. The imaging projection lens system, including lens groups 116 and 118, inverts / reverses the reduced image of the entire mirror surface of DMD10 and images it onto the projection area IA18 (IAn) on the substrate P.

[0032] To fine-tune the projection magnification Mp (approximately ± tens of ppm), the first lens group 116 of the projection unit PLU can be micro-moved along the optical axis AXa by an actuator. For high-speed focusing adjustment, the second lens group 118 can be micro-moved along the optical axis AXa by an actuator. Furthermore, to measure the positional change of the substrate P surface in the Z-axis direction with sub-micron precision, a plurality of oblique-incident light-type focusing sensors 120 are provided below the optical plate 5. The plurality of focusing sensors 120 measure the overall positional change of the substrate P in the Z-axis direction, the positional change of local areas on the substrate P corresponding to the projection areas IAn (n=1~27), ​​or the local tilt changes of the substrate P.

[0033] As explained in Figure 3 above, the projection area IAn must be tilted at an angle θk in the XY plane. Therefore, the illumination unit ILU and the projection unit PLU described above are configured such that the DMD10 and the illumination unit PLU (at least the optical path portion of mirrors 102 to 112 along the optical axis AXc) are tilted at an angle θk in the XY plane as a whole.

[0034] Figure 5 schematically illustrates the state of the DMD10 and the illumination unit PLU tilted at an angle θk in the XY plane. In Figure 5, the orthogonal coordinate system XYZ is the same as the coordinate systems XYZ in Figures 1 to 4, and the coordinate system X'Y' of the micromirrors Ms of the DMD10 is the same as the coordinate system X'Y' shown in Figure 3. The image field PLf of the circular projection unit PLU enclosing the DMD10 has its optical axis Axa at its center. On the other hand, when viewed in the XY plane, the optical axis AXb, which is bent by the tilting mirror 112 after passing through the condenser lens system 110 of the illumination unit ILU, is arranged at an angle θk tilted from the line Lu parallel to the X-axis.

[0035] [Including the imaging optical path of the DMD] Next, the imaging state of the micromirror Ms of the DMD10 using the projection unit PLU (imaging projection lens system) will be described in detail with reference to FIG6. The orthogonal coordinate system X'Y'Z of FIG6 is the same as the coordinate system X'Y'Z shown in FIG3 and FIG5. FIG6 illustrates the optical path from the condenser lens system 110 of the illumination unit ILU to the substrate P. The illumination light ILm from the condenser lens system 110 travels along the optical axis AXc, is totally reflected by the tilting mirror 112, and reaches the mirror surface of the DMD10 along the optical axis AXb. Here, the micromirror Ms located at the center of the DMD10 is called Msc, and the micromirror Ms located at the periphery is called Msa, and these micromirrors Msc and Msa are in the on state.

[0036] If the tilt angle of the micromirror Ms when it is in the open state is set to 17.5° relative to the X'Y' plane (XY plane), for example, as a standard value, then in order to make the principal rays of the reflected light Sc and Sa from each micromirror Msc and Msa parallel to the optical axis AXa of the projection unit PLU, the incident angle θα of the illumination light ILm illuminating the DMD10 (the angle of the optical axis AXb measured from the optical axis AXa) is set to 35.0°. Therefore, at this time, the reflecting surface of the tilting mirror 112 is also tilted by 17.5° (=θα / 2) relative to the X'Y' plane (XY plane). The principal ray Lc of the reflected light Sc from the micromirror Msc is coaxial with the optical axis AXa, and the principal ray La of the reflected light Sa from the micromirror Msa is parallel to the optical axis AXa. The reflected light Sc and Sa are incident on the projection unit PLU with a predetermined numerical aperture (NA).

[0037] By means of reflected light Sc, a reduced image ic of a micromirror Msc, scaled down by the projection magnification Mp of the projection unit PLU, is imaged telecentrically onto the substrate P at the position of the optical axis AXa. Similarly, by means of reflected light Sa, a reduced image ia of a micromirror Msa, scaled down by the projection magnification Mp of the projection unit PLU, is imaged telecentrically onto the substrate P at a position offset from the reduced image ic in the +X' direction. As an example, the first lens system 116 of the projection unit PLU includes two lens groups G1 and G2, and the second lens system 118 includes three lens groups G3, G4, and G5. An exit pupil (also simply called a pupil) Ep is provided between lens groups G3 and G4 of the second lens system 118. At the position of the pupil Ep, a light source image of the illumination light ILm (a collection of a large number of point light sources formed on the exit surface side of the MFE lens 108A) is formed, which becomes the structure of Kohler illumination. The pupil Ep is also known as the opening of the projection unit PLU. The size (diameter) of this opening is one of the factors that determines the resolution of the projection unit PLU.

[0038] The reflected light from the micromirror Ms in the open state of DMD10 is set to pass through without being blocked by the maximum aperture (diameter) of the pupil Ep. The numerical aperture NAI on the image side (substrate P side) in the formula R=k1·(λ / NAi) for resolution R is determined based on the distance between the maximum aperture of the pupil Ep and the focal point on the rear side (image side) of the projection unit PLU (lens groups G1~G5 in the imaging projection lens system). Furthermore, the numerical aperture NAI on the object plane (DMD10) side of the projection unit PLU (lens groups G1~G5) is expressed as the product of the projection magnification Mp and the numerical aperture NAI. When the projection magnification Mp is 1 / 6, NAI = NAI / 6.

[0039] In the structures of the illumination unit ILU and projection unit PLU shown in Figures 6 and 4 above, the emitting ends of the fiber bundles FBn (n=1~27) connected to each module MUn (n=1~27) are optically conjugate with the emitting end of the MFE lens 108A of the optical integrator 108 via the input lens system 104. The incident end of the MFE lens 108A is optically conjugate with the center of the mirror surface (central surface) of the DMD10 via the condenser lens system 110. Thus, the illumination light ILm illuminating the entire mirror surface of the DMD10 becomes a uniform illuminance distribution (e.g., intensity non-uniformity within ±1%) through the action of the optical integrator 108. Furthermore, the emitting end of the MFE lens 108A and the pupil Ep of the projection unit PLU are optically conjugate with the lens groups G1~G3 of the projection unit PLU via the condenser lens system 110.

[0040] Figure 7 is a schematic diagram of the MFE lens 108A of the optical integrator 108 as viewed from the exit surface side. The MFE lens 108A is constructed by closely arranging lens elements EL with a large number of cross-sectional shapes similar to the overall mirror surface (image forming area) of the DMD 10 and having rectangular cross-sections extending along the Y' direction in the X'Y' plane, along the X' and Y' directions. On the incident surface side of the MFE lens 108A, the illumination light ILm from the input lens system 104 shown in Figure 4 illuminates a roughly circular illumination area Ef. The illumination area Ef has a shape similar to the exit ends of the single or multiple fiber lines of the fiber bundle FB18 (FBn) in Figure 4, and is designed as a circular area centered on the optical axis AXc.

[0041] In the MFE lens 108A, among the numerous lens elements EL located within the illumination region Ef, the point light sources SPF formed by the illumination light ILm from the emitting end of the fiber bundle FB18 (FBn) are densely distributed within a roughly circular area on the exit surface side of each lens element EL. Furthermore, the circular region APh in Figure 7 represents the opening range when a variable aperture stop is provided on the exit surface side of the MFE lens 108A. The actual illumination light ILm is formed by the numerous point light sources SPF scattered within the circular region APh; light from point light sources SPF outside the circular region APh is blocked.

[0042] Figures 8(A), (B), and (C) schematically illustrate an example of the configuration relationship between the point light source SPF formed on the exit surface side of the lens element EL of the MFE lens 108A in Figure 7 and the exit end of the fiber bundle FBn. The coordinate system X'Y' in each of Figures 8(A), (B), and (C) is the same as the coordinate system X'Y' set in Figure 7. Figure 8(A) shows the case where the fiber bundle FBn is a single fiber line, Figure 8(B) shows the case where two fiber lines are arranged along the X' direction as the fiber bundle FBn, and Figure 8(C) shows the case where three fiber lines are arranged along the X' direction as the fiber bundle FBn.

[0043] The exit end of the fiber bundle FBn and the exit surface of the MFE lens 108A (lens element EL) are set to an optical conjugate relationship (imaging relationship). Therefore, when the fiber bundle FBn is a single fiber line, as shown in Figure 8(A), a single point light source SPF is formed at the center position on the exit surface side of the lens element EL. When two fiber lines are bundled together along the X' direction to form the fiber bundle FBn, as shown in Figure 8(B), the geometric centers of the two point light source SPFs are formed at the center position on the exit surface side of the lens element EL. Similarly, when three fiber lines are bundled together along the X' direction to form the fiber bundle FBn, as shown in Figure 8(C), the geometric centers of the three point light source SPFs are formed at the center position on the exit surface side of the lens element EL.

[0044] Furthermore, the illumination light ILm from the fiber bundle FBn has high power. When the point light source SPF focuses the light onto the exit surface of each lens element EL of the MFE lens 108A, which serves as a surface light source or optical integrator, it can sometimes cause damage to the individual lens elements EL (blurring or burning, etc.). In this case, the focusing position of the point light source SPF can be set in a space slightly offset outward from the exit surface of the MFE lens 108A (the exit surface of the lens element EL). Thus, in an illumination system using a compound eye lens, a structure in which the position of the point light source (focusing point) is offset outward from the lens element is disclosed, for example, in U.S. Patent No. 4,939,630.

[0045] Figure 9 schematically illustrates the shape of the light source image Ips formed in the pupil Ep within the second lens system 118 of the projection unit PL in Figure 6, assuming that the entire mirror surface of DMD10 is a single plane mirror and that this plane mirror is tilted by an angle θα / 2 to make it parallel to the tilted mirror 112 in Figure 6. The light source image Ips shown in Figure 9 is a re-image formed by a large number of point light sources SPF (which are aggregated into a roughly circular surface light source) formed on the exit surface side of MFE lens 108A. At this time, the plane mirror, which replaces DMD10, does not produce diffracted or scattered light. At the center of the pupil Ep, only the light source image Ips, which contains only positively reflected light (0th order light), is generated coaxially with the optical axis AXa.

[0046] In Figure 9, when the radius corresponding to the maximum aperture of the pupil Ep is set as re, and the radius corresponding to the effective diameter of the light source image Ips, which is a surface light source, is set as ri, the value of σ for the size (area) of the light source image Ips relative to the size (area) of the pupil Ep is σ = ri / re. The σ value may be appropriately changed to improve the linewidth or density of the pattern exposed by projection, or the depth of focus (DOF), etc. The σ value can be changed by setting a variable aperture stop (circular area APh in Figure 7) based on the position of the exit surface side of the MFE lens 108A or the position of the pupil Ep within the second lens system 118.

[0047] In this type of exposure apparatus EX, the maximum aperture is often directly used for the pupil Ep within the second lens system 118. Therefore, the change of the σ value is mainly achieved using a variable aperture stop located on the exit surface side of the MFE lens 108A. At this time, the radius ri of the light source image Ips is defined by the radius of the circular region APh in Figure 7. Of course, a variable aperture stop can also be set in the pupil Ep of the projection unit PLU to adjust the σ value or the depth of focus (DOF).

[0048] [Telecentric error during projection exposure] Next, we will explain the telecentric error that may occur when using the exposure apparatus EX with DMD10 as in this embodiment. However, before that, we will use Figure 10 to briefly explain one of the factors that cause telecentric error. Figures 10(A) and (B) are schematic diagrams showing the behavior of the illumination light (imaging beam) Sa in the optical path from the pupil Ep of the second lens group 118 shown in Figure 6 to the substrate P. The orthogonal coordinate system X'Y'Z in Figures 10(A) and (B) is the same as the coordinate system X'Y'Z in Figure 6. For the sake of simplicity, we assume that the entire mirror surface of DMD10 is a plane mirror and that it is tilted at an angle θα / 2 parallel to the tilting mirror 112 in Figure 6. In Figures 10(A) and (B), lens groups G4 and G5 are arranged along the optical axis AXa between the pupil Ep and the substrate P, and a circular light source image (area light source image) Ips is formed in the pupil Ep as shown in Figure 9. In addition, the principal ray of the reflected light (imaging beam) Sa that passes through point 1 on the periphery of the light source image (area light source image) Ips in the X' direction and is incident on the lens group G4 and G5 is set as La.

[0049] Figure 10(A) shows the behavior of the reflected light (imaging beam) Sa when the light source image (area light source image) Ips is accurately located at the center of the pupil Ep. The principal rays La of the reflected light (imaging beam) Sa directed toward a point in the projection area IAn on the substrate P are all parallel to the optical axis AXa. The imaging beam projected onto the projection area IAn is in a telecentric state, that is, the telecentric error is zero. In contrast, Figure 10(B) shows the behavior of the reflected light (imaging beam) Sa when the light source image (area light source image) Ips is laterally displaced by ΔDx from the center of the pupil Ep in the X' direction. At this time, the principal rays La of the reflected light (imaging beam) Sa directed toward a point in the projection area IAn on the substrate P are all tilted by Δθt relative to the optical axis AXa. This tilt amount Δθt is called the telecentric error. As the tilt amount Δθt (i.e., the lateral displacement amount ΔDx) increases from a predetermined allowable value, the imaging state of the pattern image projected onto the projection area IAn will decrease.

[0050] [Structure of DMD] As previously explained, the DMD10 used in this embodiment is configured for roll and pitch drive. Its specific structure will be illustrated with reference to Figures 11 and 12. Figures 11 and 12 are magnified perspective views of a portion of the mirror surface of the DMD10. Here, the orthogonal coordinate system X'Y'Z is the same as the coordinate system X'Y'Z in Figure 6. Figure 11 shows the state when the power supply to the drive circuit beneath each micromirror Ms of the DMD10 is disconnected. In the power-off state, the reflecting surface of each micromirror Ms is set to be parallel to the X'Y' plane. Here, the arrangement spacing of each micromirror Ms in the X' direction is set to Pdx (μm), and the arrangement spacing in the Y' direction is set to Pdy (μm), but in practice, Pdx = Pdy is set.

[0051] Figure 12 shows the configuration where the power supply to the drive circuit is switched on, and micromirror Msa (in the on state) and micromirror Msb (in the off state) coexist. In this embodiment, micromirror Msa (in the on state) is driven around a line parallel to the Y' axis, tilted from the X'Y' plane at an angle θd (=θα / 2), while micromirror Msb (in the off state) is driven around a line parallel to the X' axis, tilted from the X'Y' plane at an angle θd (=θα / 2). Illumination light ILm illuminates each micromirror Msa and Msb along the principal ray Lp (parallel to the optical axis AXb shown in Figure 6) parallel to the X'Z plane. Furthermore, line Lx' in Figure 11 projects the principal ray Lp onto the X'Y' plane and is parallel to the X' axis.

[0052] The incident angle θα of the illumination light ILm onto DMD10 is the tilt angle relative to the Z-axis in the X'Z plane. From a geometric optics point of view, the reflected light (imaging beam) Sa generated by the micromirror Msa, which is tilted at an angle θα / 2 towards the X' direction, travels approximately parallel to the Z-axis in the -Z direction. On the other hand, since the micromirror Msb is tilted towards the Y' direction, the reflected light Sg reflected by the micromirror Msb, which is in the closed state, is generated in the -Z direction in a state that is not parallel to the Z-axis. In Figure 12, if line Lv is set as a line parallel to the Z-axis (optical axis AXa), and line Lh is set as the projection of the principal ray of the reflected light Sg onto the X'Y' plane, then the reflected light Sg travels in the tilted direction in the plane containing lines Lv and Lh.

[0053] [Based on the imaging status of DMD] In projection exposure using DMD10, the operation shown in Figure 12 causes a large number of micromirrors Ms to switch rapidly between an on and off tilt state based on pattern data (drawing data), and the substrate P is scanned along the X direction at a speed corresponding to this switching speed to perform pattern exposure. However, depending on the fineness, density, or periodicity of the projected pattern, the telecentricity of the imaging beam projected from the projection unit PLU (first lens group 116 and second lens group 118) to the substrate P sometimes changes. This is because, according to the tilt state of the large number of micromirrors Ms of DMD10 corresponding to the pattern, the mirror surface of DMD10 functions as a reflective diffraction grating (sparkling diffraction grating).

[0054] Figure 13 shows a portion of the mirror surface of DMD10 as observed in the X'Y' plane, and Figure 14 shows the a-a' arrow portion of the mirror surface of DMD10 in Figure 13 as observed in the X'Z plane. In Figure 13, among the numerous micromirrors Ms, only one row of micromirrors Ms arranged along the Y' direction is in the open state (Msa), while the other micromirrors Ms are in the closed state (Msb). The tilting state of the micromirrors Ms in Figure 13 occurs when an isolated line pattern with a linewidth of approximately 1 μm at the resolution limit is projected. In the X'Y' plane, the reflected light (imaging beam) Sa from the open micromirror Msa is generated parallel to the Z-axis along the -Z direction, while the reflected light Sg from the closed micromirror Msb, although along the -Z direction, is tilted towards the direction along line Lh in Figure 11.

[0055] At this point, as shown in Figure 14, among the numerous micromirrors Ms arranged along the X' direction, only one micromirror Msa is in an open state, tilted by an angle θd (=θα / 2) around a line parallel to the Y' axis relative to the neutral plane Pcc (a plane parallel to the X'Y' plane containing the center point of all micromirrors Ms). Therefore, when observed in the X'Z plane, the reflected light (imaging beam) Sa generated by the open micromirror Msa is a simple standard reflected light without more than one diffraction, and its principal ray La is incident on the projection unit PLU parallel to the optical axis AXa. The reflected light Sg from the other closed micromirrors Msb does not incident on the projection unit PLU. In addition, when the open micromirror Msa is an isolated one with respect to the X' direction (or a row arranged along the Y' direction), the principal ray La of the reflected light (imaging beam) Sa is independent of the wavelength λ of the illumination light ILm and is parallel to the optical axis AXa.

[0056] Figure 15 schematically illustrates the imaging state of the reflected light (imaging beam) Sa from the isolated micromirror Msa (as shown in Figure 14) through the projection unit PLU in the X'Z plane. In Figure 15, components that have the same function as those described in Figure 6 are labeled with the same symbols. Since the projection unit PLU (lens groups G1~G5) is a telecentric reduction projection system, if the principal ray La of the reflected light (imaging beam) Sa from the isolated micromirror Msa is parallel to the optical axis AXa, then the principal ray La of the reflected light (imaging beam) Sa, which is used to image the reduced image ia, is also parallel to the perpendicular line (optical axis AXa) of the substrate P surface, and no telecentric error occurs. In addition, the numerical aperture NAo of the reflected light (imaging beam) Sa on the object side (DMD10) of the projection unit PLU shown in Figure 15 is the same as the numerical aperture ILm of the illumination light.

[0057] As illustrated in Figures 9 and 10(A), when the DMD10 is set as a large plane mirror and tilted at an angle θα / 2, the center of the circular light source image (area light source image) Ips formed in the pupil Ep of the projection unit PLU passes through the optical axis AXa. Similarly, when the standard reflected light Sa from the isolated micromirror Msa in the mirror of the DMD10 is incident on the projection unit PLU, since the reflecting surface of the micromirror Ms is a fine rectangle (square), the point image intensity distribution of the standard reflected light Sa at the position (Fourier transform surface) of the beam Isa at the pupil Ep is represented by a sinc² function (point image intensity distribution of a square opening) centered on the optical axis AXa.

[0058] Figure 16 is a schematic diagram showing the theoretical point image intensity distribution Iea of ​​the beam (here, the 0th order diffracted light) Isa formed at the pupil Ep by the reflected light Sa from a single (or isolated) micromirror Msa isolated about the X' direction (the distribution formed by the beam from a single point source SPF shown in Figures 7 and 8). In the graph of Figure 16, the horizontal axis represents the coordinate position in the X' (or Y') direction, which is set as the position of the optical axis AXa, and the vertical axis represents the light intensity Ie. The point image intensity distribution Iea is represented by the following equation (1).

[0059] [Number 1] Ie=Io·sinc 2(X')=Io·sin 2(X') / (X') 2…(1)

[0060] In equation (1), Io represents the peak value of light intensity Ie. The position of the peak value Io of the reflected light Sa from an isolated row (or single) micromirror Msa coincides with the position of the origin O in the X' (or Y') direction, i.e., the position of the optical axis AXa. Furthermore, the position ±ra of the first dark line in the X' (or Y') direction where the light intensity Ie of the point image intensity distribution Iea first becomes the minimum value (0) from the origin O roughly corresponds to the position of the radius ri of the light source image Ips as described in Figure 9. In addition, the actual intensity distribution in the pupil Ep is approximately the same intensity when the point image intensity distribution Iea is convolved with the expanded range (σ value) of the light source image Ips shown in Figure 9.

[0061] Next, referring to Figures 17 and 18, we will explain the case where the width of the projected pattern in the X' direction (X direction) is sufficiently large. Figure 17 shows a portion of the mirror surface of DMD10 as viewed in the X'Y' plane, and Figure 18 shows the a-a' arrow portion of the mirror surface of DMD10 in Figure 17 as viewed in the X'Z plane. Figure 17 shows the case where all the numerous micromirrors Ms shown in Figure 13 are in the open state. In Figure 17, only an arrangement of 9 micromirrors Ms in the X' direction and 10 micromirrors Ms in the Y' direction is shown, but sometimes adjacent micromirrors Ms of more than that number (or all micromirrors Ms on DMD10) are in the open state.

[0062] As shown in Figures 17 and 18, a large number of micromirrors Msa arranged adjacent to each other in the X' direction in an open state generate reflected light Sa' by diffraction, which is slightly tilted from the optical axis AXa. If the mirror surface of DMD10 in the state shown in Figure 18 is considered as a diffraction grating arranged at a spacing Pdx along the neutral plane Pcc in the X' direction, then the angle θj of the diffracted light is expressed as follows, with j set as the order (j=0, 1, 2, 3, ...), λ set as the wavelength, and the incident angle of the illumination light ILm set as θα, as shown in the following formula (2).

[0063] [Number 2] sinθj=j(λ / Pdx)-sinθα…(2)

[0064] FIG. 19 shows, as an example, a chart of the distribution of the angle θj of diffracted light Idj calculated by setting the incident angle θα of illumination light ILm (the tilt angle of the principal ray Lp of illumination light ILm with respect to the optical axis AXa) to 35.0°, the tilt angle θd of the microscope Msa in the open state to 17.5°, the pitch Pdx between microscopes Msa to 5.4 μm, and the wavelength λ to 355.0 nm. As shown in FIG. 19, since the incident angle θα of illumination light ILm is 35°, the 0th-order diffracted light Id0 (j = 0) is tilted by +35° with respect to the optical axis AXa, and as the diffraction order increases, the angle θj with respect to the 0th-order diffracted light Id0 increases. The numerical values shown in the lower part of FIG. 19 represent the order j within the parentheses and the tilt angle of the diffracted light Idj of each order from the optical axis AXa.

[0065] In the case of the numerical conditions of FIG. 19, the tilt angle of the 9th-order diffracted light Id9 from the optical axis AXa is the smallest, at approximately -1.04°. Therefore, when the microscopes Ms of the DMD10 are close and in the open state as shown in FIGS. 17 and 18, the center of the intensity distribution of the imaging beam (Sa') in the pupil EP of the projection unit PLU is eccentric to a position laterally displaced by an amount corresponding to an angle of -1.04° from the position of the optical axis AXa (corresponding to the lateral displacement amount △Dx shown in FIG. 10(B) above). The actual distribution of the imaging beam in the pupil Ep is obtained by performing a convolution integral (convolution operation) of the diffracted light distribution represented by Equation (2) using the sinc2 function represented by Equation (1).

[0066] FIG. 20 schematically shows a diagram of the intensity distribution of the imaging beam (Sa') in the pupil Ep in the state of generating diffracted light as shown in FIG. 19. The horizontal axis in FIG. 20 represents the values of the numerical aperture NAo on the object plane (DMD10) side and the numerical aperture NAi on the image plane (substrate P) side obtained by converting the angle θj of the diffracted light Idj when the projection magnification Mp of the projection unit PLU is set to 1 / 6. Also, the numerical aperture NAi on the image plane side of the projection unit PLU is assumed to be 0.3 (numerical aperture NAo on the object plane side = 0.05). At this time, the resolution (minimum resolvable line width) Rs is expressed as Rs = k1(λ / NAi) using the process constant k1 (0 < k1 ≤ 1).

[0067] Therefore, the resolution Rs at wavelength λ = 355.0 nm and k1 = 0.7 is approximately 0.83 μm. The distance Pdx (Pdy) between micromirrors Ms on the image plane (substrate P) side is reduced to 0.9 μm by a projection magnification Mp = 1 / 6. Therefore, if the projection unit PLU has an image plane numerical aperture NAI of 0.3 or higher (object plane numerical aperture NAO of 0.05), then the projected image of one micromirror Msa in the open state can be imaged with high contrast.

[0068] In Figure 20, according to NAo=sinθe, the angle θe in the X' direction, calculated from the optical axis AXa, where the maximum aperture of the projection unit PLU's pupil Ep is the numerical aperture NAo=0.05 on the object side, is θe≒±2.87°. As shown in Figure 19, the tilt angle of the 9th diffracted beam Id9 is -1.04° (more precisely -1.037°), which, when converted to the numerical aperture NAo on the object side, is approximately 0.018. The intensity distribution Hpa of the imaging beam Sa' (standard reflected light component) in the pupil Ep is shifted ΔDx from the original position of the image Ips (radius ri) in the X' direction. In addition, a portion of the intensity distribution Hpb formed by the 8th diffracted beam Id8 also appears in the +X' direction within the pupil Ep, but its peak intensity is low. Furthermore, the tilt angle of the 10th diffracted light Id10 on the object side, measured from the optical axis AXa, is as large as 4.81°. Therefore, this intensity distribution is distributed outside the pupil Ep and does not pass through the projection unit PLU.

[0069] As explained in Figure 10(B), the telecentric error Δθt on the image plane side, caused by the displacement ΔDx of the center of the intensity distribution Hpa, is Δθt = -6.22° (= -1.037° / projection magnification Mp) under the conditions shown in Figures 19 and 20. Thus, during exposure of a large pattern where most of the micromirrors Ms in the DMD10 are closely spaced in an open state, the principal ray of the imaging beam (Sa') towards the substrate P will be tilted by more than 6° relative to the optical axis AXa. This telecentric error Δθt can sometimes be one of the reasons for the decrease in the image quality (contrast characteristics, distortion characteristics, symmetry, etc.) of the projected image.

[0070] Next, referring to Figures 21 and 22, we will explain the case where the projected pattern has a fixed spacing of lines and gaps in the X' direction (X direction). Figure 21 shows a portion of the mirror surface of DMD10 as viewed in the X'Y' plane, and Figure 22 shows the a-a' arrow portion of the mirror surface of DMD10 in Figure 21 as viewed in the X'Z plane. Figure 21 shows the case where, among the large number of micromirrors Ms shown in Figure 13, the odd-numbered micromirrors Msa arranged along the X' direction are in the open state, and the even-numbered micromirrors Msb are in the closed state. Let the row of odd-numbered micromirrors Ms in the X' direction be all in the open state, and the row of even-numbered micromirrors Ms in the Y' direction be all in the closed state.

[0071] As shown in Figure 22, when the micromirrors Msa are arranged one at a time in the open state about the X' direction, the mirror of DMD10 is considered to be a diffraction grating arranged along the neutral plane Pcc in the X' direction with a spacing of 2·Pdx. The generation angle θj of the diffracted light generated from DMD10 is expressed by the following equation (3), which is the same as the previous equation (2).

[0072] [Number 3] sinθj=j(λ / 2Pdx)-sinθα…(3)

[0073] Figure 23, similar to Figure 19, shows the distribution of the angle θj of the diffracted light Idj calculated by setting the incident angle θα of the illumination light ILm (the tilt angle of the principal ray Lp of the illumination light ILm relative to the optical axis AXa) to 35.0°, the tilt angle θd of the micromirrors Msa in the on state to 17.5°, the distance between the micromirrors Msa 2Pdx to 10.8 μm, and the wavelength λ to 355.0 nm. As shown in Figure 23, since the incident angle θα of the illumination light ILm is 35°, the 0th order diffracted light Id0 (j=0) is tilted at +35° relative to the optical axis AXa. As the diffraction order increases, the angle θj relative to the 0th order diffracted light Id0 increases. The values ​​shown in the lower part of Figure 23 represent the order j and the tilt angle of the diffracted light Idj at each order, calculated from the optical axis AXa.

[0074] Under the numerical conditions shown in Figure 23, the tilt angle of the 17th diffracted beam Id17, measured from the optical axis AXa, is the smallest, approximately 0.85°. Furthermore, an 18th diffracted beam Id18, with a tilt angle of -1.04° measured from the optical axis AXa, is also generated. Therefore, when the micromirror Ms of the DMD10 is in the open state as a fine line and gap as shown in Figures 21 and 22, the center of the intensity distribution of the imaging beam (Sa') within the pupil EP of the projection unit PLU is offset from the position of the optical axis AXa by a lateral displacement equivalent to 0.85° or -1.04° in terms of angle. The actual distribution of the imaging beam (Sa') within the pupil EP is obtained by performing a convolution integral (convolution operation) on the diffracted beam distribution represented by Equation (3) using the sinc2 function represented by Equation (1).

[0075] In the case of Figure 23, similar to Figure 20, the intensity distribution Hpa of the imaging beam (standard reflected light component) in the pupil Ep corresponds to the tilt angles of the 17th diffracted beam Id17 (0.85°) and the 18th diffracted beam Id18 (-1.04°), respectively, shifting from the original position of the light source image Ips (radius ri) in the X' direction. In the case of the diffracted light distribution as shown in Figure 23, one of the intensity distributions Hpa formed in the direction of the 17th diffracted beam Id17 and the 18th diffracted beam Id18 has a higher intensity than the other. Therefore, the telecentric error Δθt on the image plane side caused by the displacement of the intensity distribution Hpa is approximately within the range of Δθt = 5.1° and Δθt = -6.22°.

[0076] This range differs slightly from the generation direction of the 9th diffraction light Id9 (refer to Figure 19) when a large number of micromirrors Ms are in the open state and adjacent to each other, as shown in Figures 17 and 18, i.e., the telecentric error Δθt = -6.22°. Furthermore, it is significantly different from the telecentric error Δθt = 0° when a single row (or a single micromirror) in a large number of micromirrors Ms is in the open state, as shown in Figures 13 and 14. In addition, the actual pattern image projected onto the substrate P by the projection unit PLU is formed by the interference of the reflected light Sa' containing the diffracted light from DMD10 introduced into the projection unit PLU. Furthermore, Equation (3) can be used to determine the generation state of diffracted light for a line and gap pattern with an arrangement spacing or linewidth n times Pdx (5.4 μm) by using Equation (4) with n as a real number.

[0077] [Number 4] sinθj=j(λ / (n·Pdx))-sinθα…(4)

[0078] Thus, when most of the micromirrors Ms in a large number of micromirrors such as DMD10 are in the open state in a line and gap pattern, the principal ray of the imaging beam toward the substrate P may sometimes be significantly tilted relative to the optical axis AXa, which may lead to a significant decrease in the imaging quality (contrast characteristics, distortion characteristics, etc.) of the projected image. Therefore, Figure 24 is used to illustrate an example of the change in imaging quality caused by the telecentric error Δθt. Figure 24 is a graph showing the results of simulating a spatial image of a line and gap pattern with a line width of 1 μm and a distance of 2 μm in the X' direction on the image plane. The horizontal axis of Figure 24 represents the position (μm) in the X' direction on the image plane, and the vertical axis represents the relative intensity value with the intensity of the illumination light (incident light) normalized to 1.

[0079] In the graph of Figure 24, the numerical aperture NAi of the image side of the projection unit PLU is set to 0.25, the σ value of the illumination light ILm is 0.6, the imaging beam (Sa') in the pupil Ep of the projection unit PLU is decentered in the X' direction relative to the optical axis AXa, and the telecentricity error Δθt on the image side is 50 mrad (≒2.865°). In the graph of Figure 24, the characteristic Q1 shown by the dashed line is the contrast characteristic on the optimal focusing surface (optimal imaging surface) of the projection unit PLU, and the characteristic Q2 shown by the solid line is the contrast characteristic on the surface that is defocused by 3 μm from the optimal focusing surface in the direction of the optical axis AXa. In addition, in Figure 24, dark lines with a line width of 1 μm are formed at positions 0, ±2 μm, and ±4 μm, for a total of 5 locations.

[0080] Typically, due to defocusing, the contrast (intensity amplitude) of characteristic Q2 decreases compared to characteristic Q1. However, it can be determined that the symmetry between the characteristics near +5 μm and near -5 μm deteriorates due to the influence of the telecentric error Δθt. Therefore, when the telecentric error Δθt on the image plane exceeds the allowable range (e.g., ±2°), i.e., when the micromirrors Msa in the DMD10 are arranged in a wide and dense or periodic pattern, the accuracy of the edge position of the photoresist image corresponding to the edge of the exposed pattern will be compromised. As a result, the linewidth or size of the pattern will be incorrect. In other words, as the intensity distribution (diffraction distribution) of the pupil Ep formed on the projection unit PLU by the reflected light (imaging beam) Sa' from the DMD10 deviates from an isotropic or symmetrical state centered on the optical axis AXa, the asymmetry of the projected pattern image increases.

[0081] [Wavelength dependence of telecentric error] As can be clearly seen from the previous equations (2) or (3), the telecentric error Δθt described above varies depending on the wavelength λ. For example, in the case of the states shown in Figures 17 and 18 as represented by equation (2), in order to set the telecentric error Δθt on the image plane side to zero, it is only necessary to set it to the wavelength λ at which the tilt angle of the 9th diffracted light Id9, calculated from the optical axis AXa, becomes zero, which is -1.04° (more precisely -1.037°).

[0082] Figure 25 is a graph showing the relationship between the center wavelength λ and the telecentric error Δθt, calculated based on the previous equation (2). The horizontal axis represents the center wavelength λ (nm), and the vertical axis represents the telecentric error Δθt (deg) on ​​the image plane side. When the distance between the micromirrors Ms of the DMD10 is set to 5.4 μm, the tilt angle θd of the micromirrors Ms is set to 17.5°, and the incident angle θα of the illumination light ILm is set to 35°, and the micromirrors Ms are tightly in the open state as shown in Figures 17 and 18, the telecentric error Δθt is theoretically zero when the center wavelength λ is approximately 344.146 nm. The telecentric error Δθt on the image plane side is ideally set to zero, but it can be within an acceptable range depending on the minimum linewidth (or resolution Rs) of the pattern to be projected.

[0083] For example, when the permissible range of the telecentric error Δθt on the image plane side is set to within ±0.6° (approximately 10 mrad), as shown in Figure 25, the center wavelength λ only needs to be in the range of 343.098 nm to 345.193 nm (with a width of 2.095 nm). Furthermore, when the permissible range of the telecentric error Δθt on the image plane side is set to within ±2.0°, the center wavelength λ only needs to be in the range of 340.655 nm to 347.636 nm (with a width of 6.98 nm).

[0084] Thus, the telecentric error Δθt, arising from the arrangement (periodicity) or density of the micromirrors Msa in the DMD10's open state, is also wavelength-dependent. Generally, the specifications of the distance between the micromirrors Ms, Pdx (Pdy), or the tilt angle θd of the DMD10 are uniquely set by existing products (e.g., the ultraviolet-compatible DMD manufactured by Texas Instruments). Therefore, the wavelength λ of the illumination light ILm is set in accordance with these specifications. In this embodiment, the DMD10 sets the distance between the micromirrors Ms, Pdx (Pdy), to 5.4 μm and the tilt angle θd to 17.5°. Therefore, as a light source supplying illumination light ILm to each fiber bundle FBn (n=1~27), ​​a fiber amplifier laser light source that generates high-brightness ultraviolet pulsed light can be used.

[0085] Fiber optic amplifier laser sources, such as those disclosed in Japanese Patent No. 6428675, include: a semiconductor laser element that generates seed light in the infrared band, a high-speed switching element (electro-optical element, etc.) for the seed light, an optical fiber that amplifies the switched seed light by pumping light, and a wavelength conversion element that converts the amplified infrared light into harmonic (ultraviolet band) pulsed light. In the case of this type of fiber optic amplifier laser source, the peak wavelength of ultraviolet light whose generation efficiency (conversion efficiency) can be improved by combining the available semiconductor laser element, optical fiber, and wavelength conversion element is 343.333 nm. At this peak wavelength, the maximum possible image-plane-side telecentric error Δθt (the tilt angle of the 9th diffracted light Id9 on the image-plane side in Figures 19 and 20) that may occur in the state shown in Figure 17 is approximately 0.466° (approximately 8.13 mrad).

[0086] As described above, when combining two lights (wavelengths 375 nm and 405 nm) with significantly different peak wavelengths, the telecentric error Δθt can vary considerably depending on the shape of the pattern to be projected (isolated pattern, line and gap pattern, or large island pattern). In this embodiment, the illumination light ILm supplied to each module MUn (n=1~27) combines light from multiple fiber amplifier laser sources with slightly deviated peak wavelengths within the allowable wavelength-dependent telecentric error Δθt. Thus, by using the illumination light ILm that combines multiple lights with slightly deviated peak wavelengths, the contrast of speckle (or interference fringes) generated on the micromirror Ms of the DMD10 (and on the substrate P) due to the interferometry of the illumination light ILm can be suppressed. Details will be described later.

[0087] [Centrocentric Adjustment Mechanism] As explained above, when the numerous micromirrors Ms in the DMD10 are arranged closely along the X' and Y' directions according to the pattern to be exposed to the substrate P, or when they are arranged periodically along the X' (or Y') direction, a telecentric error (angular change) Δθt will occur in the imaging beam (Sa, Sa') projected from the projection unit PLU, regardless of the degree of error. Each of the numerous micromirrors Ms in the DMD10 switches between on and off states with a response speed of approximately 10 kHz, therefore the pattern image generated by the DMD10 also changes rapidly according to the depicted data. Therefore, during the scanning exposure of patterns on display panels, the shape of the pattern image projected from each module MUn (n=1~27) changes instantaneously into isolated line or dot patterns, line and gap patterns, or large island patterns, etc.

[0088] A typical television display panel (LCD or OLED) includes: an image display area, on which pixels of approximately 200-300 μm square are arranged in a matrix on a substrate P with a predetermined aspect ratio such as 2:1 or 16:9; and peripheral circuitry (lead wiring, bonding pads, etc.) disposed around the perimeter. Within each pixel, a thin-film transistor (TFT) for switching or current driving is formed, but the size (linewidth) of the TFT pattern (patterns of the gate layer, drain / source layer, semiconductor layer, etc.), gate wiring, or drive wiring is sufficiently small compared to the pixel spacing (200-300 μm). Therefore, when exposing the pattern within the image display area, the pattern image projected from the DMD10 is almost entirely isolated, thus preventing telecentricity error Δθt.

[0089] However, depending on the structure of the TFT circuit driving circuit for each pixel, sometimes lines and gaps are formed along the X or Y direction with a spacing smaller than the pixel spacing. In this case, when exposing the pattern within the image display area, the pattern image projected from the DMD10 exhibits periodicity. Therefore, a telecentric error Δθt will occur depending on the degree of this periodicity. Furthermore, during exposure of the image display area, sometimes rectangular patterns that are approximately the same size as or more than half the area of ​​the pixels are also exposed. In this case, more than half of the numerous micromirrors Ms of the DMD10 exposed to the image display area are in a roughly compact state. Therefore, a relatively large telecentric error Δθt may occur.

[0090] The state of the telecentric error Δθt can be predicted before exposure based on the drawing data of the pattern used in the display panel exposed by each of the plurality of modules MUn (n=1~27). In this embodiment, the position or orientation of each of the optical components in the module MUn can be configured to be finely adjustable, and the telecentric error Δθt is corrected by selecting an optical component that can be adjusted according to the magnitude of the predicted telecentric error Δθt.

[0091] Figure 26 shows the specific structure of the optical path from the fiber bundle FBn to the MFE lens 108A in the illumination unit ILU of the module MUn shown in Figure 4 or Figure 6. Figure 27 shows the specific structure of the optical path from the MFE lens 108A to the DMD10 in the illumination unit ILU. In Figures 26 and 27, the orthogonal coordinate system X'Y'Z is set to be the same as the coordinate system X'Y'Z in Figure 4 (Figure 6), and components that have the same function as the components shown in Figure 4 are labeled with the same symbols.

[0092] Although not illustrated in Figure 4, in Figure 26, a contact lens 101 is positioned after the exit end of the fiber bundle FBn to suppress the propagation of the illumination light ILm from the exit end. The optical axis of the contact lens 101 is set parallel to the Z-axis. The illumination light ILm, traveling from the fiber bundle FBn with a predetermined numerical aperture, is reflected by mirror 100 and travels parallel to the X' axis, and is also reflected by mirror 102 in the -Z direction. The condenser lens system 104, arranged in the optical path from mirror 102 to the MFE lens 108A, includes three lens groups 104A, 104B, and 104C spaced apart from each other along the optical axis AXc.

[0093] The illuminance adjustment filter 106 is supported by a holding member 106A that moves in parallel via a drive mechanism 106B, and is positioned between lens group 104A and lens group 104B. One example of the illuminance adjustment filter 106 is disclosed in Japanese Patent Application Publication No. 11-195587, where fine light-blocking dot patterns or multiple rows of elongated light-blocking wedge patterns are gradually formed on a transmissive plate such as quartz, and by moving the quartz plate in parallel, the transmittance of the illumination light ILm can be continuously varied within a predetermined range.

[0094] The first telecentric adjustment mechanism includes: a tilting mechanism 100A, which finely adjusts the two-dimensional tilt (rotation angles about the X' axis and about the Y' axis) of the mirror 100 that reflects the illumination light ILm from the fiber bundle FBn; a parallel movement mechanism 100B, which causes the mirror 100 to move two-dimensionally in the X'Y' plane perpendicular to the optical axis AXc; and a drive unit 100C, including a micro-head or a piezoelectric actuator, which separately drives the tilting mechanism 100A and the parallel movement mechanism 100B.

[0095] By adjusting the tilt of the adjusting mirror 100, the central ray (principal ray) of the illumination light ILm incident on the condenser lens system 104 can be adjusted to be coaxial with the optical axis AXc. Furthermore, the exit end of the fiber bundle FBn is positioned at the front focal point of the condenser lens system 104. Therefore, when the mirror 100 is moved slightly in the X' direction, the central ray (principal ray) of the illumination light ILm incident on the condenser lens system 104 is displaced parallel to the optical axis AXc in the X' direction. Consequently, the central ray (principal ray) of the illumination light ILm emitted from the condenser lens system 104 travels at a slight tilt relative to the optical axis AXc. Therefore, the illumination light ILm incident on the MFE lens 108A is slightly tilted overall in the X'Z plane.

[0096] Figure 28 is an exaggerated representation of the state of the point light source SPFs formed on the exit surface side of the MFE lens 108A when the illumination light ILm incident on the MFE lens 108A is tilted in the X'Z plane. When the central ray (principal ray) of the illumination light ILm is parallel to the optical axis AXc, the point light source SPFs focused on the exit surface side of each lens element EL of the MFE lens 108A, as shown by the white circles in Figure 28, are located in the center about the X' direction. When the illumination light ILm is tilted relative to the optical axis AXc in the X'Z plane, the point light source SPFs focused on the exit surface side of each lens element EL, as shown by the black circles in Figure 28, are deflected Δxs from the center position in the X' direction. At this time, as explained in Figures 7 to 9, the surface light source as a whole, including the collection of a large number of point light source SPFs formed on the exit surface side of the MFE lens 108A, is laterally displaced Δxs in the X' direction. Because the cross-sectional dimensions of each lens element EL in the X'Y' plane of the MFE lens 108A are small, the eccentricity Δxs of the surface light source in the X' direction is also small.

[0097] As shown in Figure 26, a variable aperture stop (σ-value adjustment stop) 108B is provided on the exit surface side of the MFE lens 108A. The MFE lens 108A and the variable aperture stop 108B are integrally mounted on the holding part 108C. The holding part 108C (MFE 108A) is provided in such a way that its position in the X'Y' plane can be finely adjusted by a micro-motion mechanism 108D, which includes a micro-head or a piezoelectric motor. In this embodiment, the micro-motion mechanism 108D, which enables the MFE lens 108A to move two-dimensionally in the X'Y' plane, functions as a second telecentric adjustment mechanism.

[0098] Following the MFE lens 108A, a plate-shaped beam splitter 109A is provided, tilted at approximately 45° relative to the optical axis AXc. The beam splitter 109A allows most of the illumination light ILm from the MFE lens 108A to pass through, while reflecting the remaining light (e.g., a few percent) towards the condenser lens 109B. A portion of the illumination light ILm, focused by the condenser lens 109B, is guided by the fiber bundle 109C to the photoelectric element 109D. The photoelectric element 109D monitors the intensity of the illumination light ILm and is used as an integrating sensor (integration monitoring) to measure the exposure of the imaging beam projected onto the substrate P.

[0099] As shown in Figure 27, the illumination light ILm from the surface light source (an assembly of point light sources SPF) on the exit surface side of the MFE lens 108A passes through the beam splitter 109A and enters the condenser lens system 110. The condenser lens system 110 includes a front group lens system 110A and a rear group lens system 110B arranged with an open gap. Its two-dimensional position in the X'Y' plane can be finely adjusted by a micro-motion mechanism 110C, which includes a micro-head or a piezoelectric motor. That is, the eccentric adjustment of the condenser lens system 110 can be achieved by the micro-motion mechanism 110C. In this embodiment, the micro-motion mechanism 110C, which makes the condenser lens system 110 move two-dimensionally in the X'Y' plane, functions as a third telecentric adjustment mechanism. In addition, the first, second and third telecentric adjustment mechanisms all adjust the relative positional relationship between the surface light source formed on the exit surface side of the MFE lens 108A (or the surface light source confined within the circular opening of the variable aperture stop 108B) and the condenser lens system 110 with respect to the eccentric direction.

[0100] The front focal point of the condenser lens system 110 is set at the position of the surface light source (an assembly of point light source SPFs) on the exit surface side of the MFE lens 108A. The illumination light ILm, which travels from the condenser lens system 110 through the tilting mirror 112 in a telecentric state, provides Kohler illumination to the DMD 10. As previously explained using FIG28, when the surface light source, which includes an assembly of numerous point light source SPFs formed on the exit surface side of the MFE lens 108A, is laterally displaced by Δxs in the X' direction, the principal ray (central ray) of the illumination light ILm illuminating the DMD 10 becomes slightly tilted relative to the optical axis AXb in FIG27. That is, by using the first telecentric adjustment mechanism to intentionally impart a telecentric error to the illumination light ILm, the incident angle θα of the illumination light ILm, as explained using FIG6, 14, 18, and 22, can be slightly changed in the X'Z plane from the initial set angle (35.0°).

[0101] Furthermore, when the micro-motion mechanism 108D, which serves as the second telecentric adjustment mechanism as shown in Figure 26, moves the MFE lens 108A and the variable aperture stop 108B integrally in the X'Y' plane in the X' direction, the circular opening of the variable aperture stop 108B (the circular area APh in Figure 7) becomes off-center relative to the optical axis AXc. This causes the surface light source formed within the circular opening (circular area APh) to also shift as a whole in the X' direction. At this time, the principal ray (central ray) of the illumination light ILm illuminating the DMD10 can also be tilted in the X'Z plane relative to the optical axis AXb in Figure 27; that is, the incident angle θα of the illumination light ILm toward the DMD10 can be changed in the X'Z plane from the initial set angle (35.0°). Furthermore, even if the micro-motion mechanism 108D is configured such that only the variable aperture stop 108B moves slightly in the X'Y' plane, the incident angle θα can still be changed by means of the micro-motion mechanism 108D.

[0102] Therefore, in order to make the MFE lens 108A and the variable aperture stop 108B move relatively significantly as a unit, the beam width (diameter of the illumination range) of the illumination light ILm emanating from the condenser lens system 104 onto the MFE lens 108A must be pre-expanded. Furthermore, it is also effective to configure a displacement mechanism that, in conjunction with the amount of displacement, causes the illumination light ILm emanating onto the MFE lens 108A to move laterally in the X'Y' plane. This displacement mechanism may include a mechanism that tilts the direction of the exit end of the fiber bundle FBn, or a mechanism that tilts the parallel plane plate (quartz plate) positioned in front of the MFE lens 108A, etc.

[0103] Both the first telecentric adjustment mechanism (drive unit 100C, etc.) and the second telecentric adjustment mechanism (micro-motion mechanism 108D, etc.) can adjust the incident angle θα of the illumination light ILm toward the DMD10. However, regarding the adjustment amount, the first telecentric adjustment mechanism can be used as a fine adjustment, and the second telecentric adjustment mechanism can be used as a coarse adjustment. In actual adjustment, the appropriate choice can be made based on the shape of the pattern to be projected (the amount of telecentric error Δθt or the correction amount) to use either the first or second telecentric adjustment mechanism, or just one of them.

[0104] Furthermore, the micro-motion mechanism 110C, which serves as the third telecentric adjustment mechanism, offsets the condenser lens system 110 in the X'Y' plane, achieving the same effect as when the second telecentric adjustment mechanism offsets the position of the surface light source predetermined by the MFE lens 108A and the variable aperture stop 108B. However, when the condenser lens system 110 is offset in the X' direction (or Y' direction), the illumination area of ​​the illumination light ILm projected onto the DMD 10 also shifts laterally. Therefore, the illumination area is set to be larger than the overall size of the mirror surface of the DMD 10, taking into account this lateral shift. The third telecentric adjustment mechanism, including the micro-motion mechanism 110C, can also be used separately from the second telecentric adjustment mechanism 1 as a coarse adjustment.

[0105] [Other telecentric adjustment mechanisms] The adjustment (correction) of the telecentric error can also be achieved by using a micro-motion mechanism to laterally displace the position of the exit end of each fiber bundle FBn (n=1~27) shown in Figures 4 and 26 in the X'Y' plane. At this time, similar to the previous first telecentric adjustment mechanism (drive mechanism 100C, etc.), the position of the surface light source (a collection of a large number of point light sources SPF) formed on the exit surface side of the MFE lens 108A can be finely adjusted.

[0106] The telecentricity error can also be corrected by using a micro-motion mechanism such as a micro-head or piezoelectric actuator to adjust the original angle of the tilting mirror 112 shown in Figures 4, 6, and 27, thereby fine-tuning the incident angle θα (e.g., 35.0°) of the illumination light ILm toward the DMD10. Alternatively, the tilt of the mirror surface (central plane Pcc) of the DMD10 can be fine-tuned by combining the parallel connection mechanism of the mounting part 10M shown in Figures 4 and 27 with a piezoelectric element to correct the telecentricity error. However, the angle adjustment of the tilting mirror 112 or the DMD10 is used as a coarse adjustment because the reflected light is tilted by a multiple of the adjustment angle. Furthermore, during the angle adjustment of DMD10, the conjugate surface (optimal focusing surface) of the neutral surface Pcc projected onto the substrate P will be tilted relative to the surface perpendicular to the optical axis Axa in the direction of scanning exposure (X' direction or X direction).

[0107] When the direction of image plane tilt is the direction of scanning exposure, the contrast decrease of the exposed pattern image is slight because scanning exposure is performed at the average image plane position of the tilted image plane. Therefore, the function of tilting the DMD10 towards the scanning exposure direction (X' direction or X direction) to correct the telecentricity error Δθt can also be effectively used within a range where the contrast decrease of the exposed pattern image is negligible. When the DMD10 is tilted to the point where the contrast decrease cannot be ignored, a certain image plane tilt correction system (such as two wedge-shaped angled prisms) can be provided in the projection unit PLU. Alternatively, for the correction of the telecentricity error Δθt, a mechanism that decenters a specific lens group or lens in the projection unit PLU relative to the optical axis AXa can also be provided. In addition, the tilt correction system (such as two wedge-shaped angled prisms) can also be provided in the illumination unit ILU.

[0108] [Beam supply unit] Next, referring to FIG29, an example of a beam supply unit that supplies illumination light ILm to each module MUn (n=1~27) attached to the exposure apparatus EX shown in FIG1 will be described. For convenience, the orthogonal coordinate system XYZ in FIG29 is set to be the same as the coordinate system XYZ in FIG1. ​​In the beam supply unit of FIG29, the beams LB1~LB4 (beam diameter less than 1 mm) from the four laser sources (fiber amplifier laser sources) FL1~FL4 are combined into a single beam LBa by the beam combining unit 200. Each laser source FL1~FL4 has a basic peak wavelength of 343.333 nm and oscillates to produce pulsed light with peak wavelengths (spectral width of about 0.05 nm) and emission durations in the tens of picoseconds, which are different from the predetermined wavelengths.

[0109] Four laser light sources FL1 to FL4 respond to a common clock signal (e.g., a frequency of 200 kHz) and oscillate synchronously at predetermined intervals to generate pulsed light. The oscillation timing of each of the four laser light sources FL1 to FL4 can be either synchronized with the clock signal and completely identical, or it can have a time difference (delay) of approximately the duration of light emission, allowing them to oscillate sequentially. Thus, by creating a time difference (delay) in the light emission timing, the interference of the illumination light ILm illuminating the DMD10 can be reduced.

[0110] A beam LBa synthesized by the beam combining unit 200 is incident on a retarder unit 202, which is formed by combining multiple beams that have been split into beams with different optical path lengths. The retarder unit 202 is designed to reduce speckle caused by the high coherence (temporal and spatial interference) of the original beams LB1 to LB4, and is formed by combining multiple beams whose wavefronts are delayed in time. Therefore, the retarder unit 202 has: multiple delay optical path units 202A, each with a different optical path length; and a splitting and combining unit 202B, which splits the incident beam LBa into each delay optical path unit 202A and combines the return beams from each delay optical path unit 202A. The principle structure of this retarder unit 202 is disclosed, for example, in Japanese Patent Application Publication No. 2007-227973.

[0111] The light beam LBb, whose temporal interferocity has been reduced by the delay unit 202, is incident on the beam switching unit 204. The beam switching unit 204 is equipped with a high-speed rotating polygon mirror PM, and the light beam LBb is fan-shaped by the reflecting surfaces of the rotating polygon mirror PM. At approximately equal distances from the incident position of the light beam LBb on the reflecting surfaces of the rotating polygon mirror PM, the incident ends FB1a to FB9a of the nine fiber bundles FB1 to FB9 are arranged in an arc shape at a fixed angle with respect to the direction of the light beam LBb's incident position.

[0112] As explained in Figure 8, each of the fiber bundles FB1 to FB9 consists of a single fiber or a bundle of multiple fiber fibers. Although not shown in Figure 29, an f-θ lens (non-telecentric) covering the fan-shaped deflection range of the beam LBb is provided after the rotating polygon mirror PM. Furthermore, a small lens is provided before each of the incident ends FB1a to FB9a of the fiber bundles FB1 to FB9 to focus the beam LBb from the rotating polygon mirror PM into a small point. The beam LBb is generated by pulse oscillation in response to a common clock signal from each laser source FL1 to FL4, and the period of the clock signal is synchronized with the rotational speed (angular phase) of the rotating polygon mirror PM so that each pulse of the beam LBb is sequentially incident on the incident ends FB1a to FB9a of the fiber bundles FB1 to FB9.

[0113] In this embodiment, the beam supply unit with the same structure as in Figure 29 is further provided with two sets. One set switches the beam LBb and supplies it to the fiber bundles FB10-FB18 of modules MU10-MU18 respectively. The other set switches the beam LBb and supplies it to the fiber bundles FB19-FB27 of modules MU19-MU27 respectively. Furthermore, in the beam supply unit of Figure 29, four laser light sources FL1-FL4 are used, but three or fewer laser light sources can also be used. More laser light sources can also be set to combine five or more beams using the beam combining unit 200.

[0114] Furthermore, as previously explained, the peak wavelengths of the beams LBn (n=1, 2, 3…) from multiple laser sources FLn (n=1, 2, 3…) can also be differed by a fixed amount of wavelength to reduce speckle. As an example, Figure 30 schematically shows the wavelength distribution of the beam LBb after beams LB1~LB7 from seven laser sources FL1~FL7 are combined by the beam combining unit 200. In Figure 30, the horizontal axis represents wavelength (nm), and the vertical axis represents the value of the peak intensity of beams LB1~LB7 normalized to 1. The seven laser sources FL1~FL7 have substantially the same structure, but are configured such that the wavelengths of their respective light sources differ by a fixed value, resulting in the peak wavelengths (center wavelengths) of the final output beams LB1~LB7 deviating from each other by approximately 30 pm (0.03 nm).

[0115] Because this type of fiber amplifier laser source in the ultraviolet band uses a wavelength conversion element, the spectral width of the oscillation wavelength is also narrow, for example, as shown in Figure 30, it is about 50 pm (0.05 nm) in the intensity of 1 / e2 of the peak intensity. In the case of Figure 30, the center wavelength of the beam LB4 from laser source FL4 is set to 343.333 nm, the center wavelength of the beam LB3 from laser source FL3 is set to 343.303 nm, the center wavelength of the beam LB2 from laser source FL2 is set to 343.273 nm, and the center wavelength of the beam LB1 from laser source FL1 is set to 343.243 nm. Furthermore, the center wavelength of the beam LB5 from laser source FL5 is set to 343.363 nm, the center wavelength of the beam LB6 from laser source FL6 is set to 343.393 nm, and the center wavelength of the beam LB7 from laser source FL7 is set to 343.423 nm.

[0116] Therefore, the wavelength spectral width of the beam LBb, which is synthesized from beams LB1 to LB7, is approximately 180 pm (0.18 nm) when observed at the interval of peak wavelengths, and approximately 230 pm (0.23 nm) when observed at the interval of 1 / e2 intensity (343.218 nm to 343.448 nm). Thus, when the speckle is reduced by expanding the spectral width of the illumination light ILm of beam LBb, i.e., DMD10, a corresponding telecentric error Δθt is also generated, but it is set to a spectral width whose influence is within the acceptable range. In the above example of spectral width, for the illumination light ILm containing peak wavelengths of 343.243 nm and 343.423 nm, the case of the previous Figures 17 and 18, where a large telecentric error Δθt may occur, is calculated using Equation (2) explained in Figure 19.

[0117] In this calculation, if we also assume that the incident angle θα of the illumination light ILm is 35.0°, the tilt angle θd of the micromirror Msa in the open state is 17.5°, and the projection magnification Mp is 1 / 6, then when the peak wavelength of the illumination light ILm is 343.243 nm, the telecentric error of the 9th diffracted light Id9 on the object plane side (DMD10 side) is approximately 0.086° (the telecentric error on the image plane side Δθt ≒ 0.517°). Similarly, when the peak wavelength of the illumination light ILm is 343.423 nm, the telecentric error of the 9th diffracted light Id9 on the object plane side (DMD10 side) is approximately 0.069° (the telecentric error on the image plane side Δθt ≒ 0.414°). Therefore, if the spectral width of the illumination light ILm is between the peak wavelength of 343.243 nm and 343.423 nm, the telecentric error Δθt on the image plane side that may be caused by the expansion of the wavelength spectral width can be suppressed to within the allowable range of ±2° as shown in Figure 25 (or more ideally within the allowable range of ±1°).

[0118] When the illumination light ILm is made to have a wider spectrum (broader) in order to reduce speckle, the limits of the short and long wavelength values ​​can be set by considering the allowable range of the telecentric error Δθt on the image plane side caused by the difference in wavelength (e.g., within ±2°). Therefore, the number of laser light sources FLn is not limited to 7, and the degree of misalignment of the center wavelengths of the beams LBn from each laser light source is not limited to 30 pm.

[0119] Figure 31 shows a portion of the mirror surface of the DMD10 during exposure of a line and gap pattern tilted at 45° on substrate P. In Figure 31, similar to Figures 13, 17, and 21, the reflected light Sa from each micromirror Msa in the open state is reflected in the -Z direction, and the reflected light Sg from each micromirror Msb in the closed state is reflected in the tilt direction within the X'Y' plane. The micromirrors Msa in the open state are arranged in a row adjacent to each other in the 45° tilt direction, forming a diffraction grating. Therefore, in the reflected light (imaging beam) Sa' generated from all the micromirrors Msa in the open state, a telecentric error Δθt is generated due to the diffraction phenomenon.

[0120] In the case of the line and gap pattern as shown in Figure 21, the telecentric error Δθt only occurs in the X' direction. However, in the case of the line and gap pattern as shown in Figure 31, the telecentric error Δθt occurs in both the X' and Y' directions. Therefore, in the case of the line and gap pattern as shown in Figure 31, which is tilted at an angle of 45° or 30°~60°, if the possible telecentric error Δθt exceeds the allowable range in either the X' or Y' direction, it can also be corrected by the several telecentric error adjustment mechanisms described in Figures 26 and 27.

[0121] [Control system for telecentric error correction] Figure 32 is a block diagram showing a schematic example of a part of the exposure control device attached to the exposure apparatus EX of this embodiment, particularly related to the adjustment and control of telecentric error. The telecentric error adjustment control system TEC shown in Figure 32 is applicable to all or at least one of the first telecentric adjustment mechanism (drive unit 100C, etc.), the second telecentric adjustment mechanism (micro-motion mechanism 108D, etc.), and the third telecentric adjustment mechanism (micro-motion mechanism 110C, etc.) described in Figures 26 and 27, which can be electrically driven by an actuator such as a motor.

[0122] In Figure 32, each of the 27 modules MU1 to MU27 shown in Figure 2 has a drawing data storage unit (hereinafter also referred to as the storage unit) 300 in its DMD10 that sends out drawing data MD1 to MD27 for pattern exposure. Before the exposure operation, each of the drawing data MD1 to MD27 is sent to an angle change determination unit (hereinafter also referred to as a telecentric error determination unit) 302. The telecentric error determination unit 302 has: a data analysis unit 302A that analyzes the shape (isolation, lines and gaps, pads, etc.) of the exposed pattern in each projection area IA1 to IA27 on the substrate P (refer to Figures 2 and 3) and its position on the substrate P based on each drawing data MD1 to MD27; and a telecentric error calculation unit 302B that calculates information SDT related to the telecentric error Δθt corresponding to the analyzed pattern shape.

[0123] Here, we will explain one example of the main function of the angle change determination unit (telecentric error determination unit) 302 with reference to Figures 33 and 34. Figure 33 shows an example of the arrangement of the display area DPA and the peripheral areas PPAx and PPAy of the display panel exposed to the substrate P by the exposure apparatus EX shown in Figures 1 and 2. The maximum exposure area EXA at ​​the outer edge represents the range that can be exposed by modules MU1 to MU27 in one scan exposure of the exposure apparatus EX. The display area DPA contains a large number of pixels arranged at fixed intervals along the X and Y directions, and has an overall aspect ratio of 16:9, 2:1, etc. In addition, here, the long side direction of the display area DPA is set as the X direction.

[0124] As an example, the scanning and exposure areas DA7 and DA10 of the modules MU7 and MU10 shown in Figure 2 will be explained. The actual projection areas IA7 and IA10, as shown in Figure 3, are tilted at an angle θk relative to the XY coordinate system. Within area DA7, at the end in the -X direction (or +X direction), there is a narrow peripheral area PPAx in the X direction, but this is almost entirely occupied by the display area DPA extending along the X direction (scanning and exposure direction). Within the display area DPA, for example, pixels approximately 200 μm to 300 μm square are arranged along the XY direction. However, the pattern exposed within each pixel may be an isolated pattern, a line and gap pattern, or a large island pattern at each step of the manufacturing process.

[0125] Figure 33 shows an example of the configuration of pixels (PIX) in a display area (DPA) appearing within a projection area (IAn) (n=1~27). As previously illustrated as a numerical example, the spacing Pd of the micromirrors Ms of the DMD10 is set to 5.4 μm. There are 2160 micromirrors Ms arranged along the X' direction and 3840 along the Y' direction. At this time, the aspect ratio is 16:9 (=3840:2160), and the actual size of the mirror surface of the DMD10 in the X' direction is 11.664 mm, and the actual size in the Y' direction is 20.736 mm. When the projection magnification Mp of the projection unit PLU is 1 / 6, the size of the projection area IAn on the substrate P in the X' direction is 1944 μm, and the size in the Y' direction is 3456 μm. Furthermore, the projected image of a single micromirror Msa in the open state is approximately 0.9 μm square on the substrate P.

[0126] When the distance between the X' and Y' directions of the pixel PIX on the substrate P is set to 300 μm, approximately 6 pixel PIXs appear in the X' direction and approximately 11 pixel PIXs appear in the Y' direction within the projection area IAn. The pattern exposed within the pixel PIX is an isolated pattern PA1, a line and gap pattern PA2, or an island pattern PA3 in each layer. In Figure 34, for illustration, the three patterns PA1, PA2, and PA3 are shown in summary. However, when pattern PA1 is exposed, pattern PA1 appears in all pixel PIXs contained within the projection area IAn; when pattern PA2 is exposed, pattern PA2 appears in all pixel PIXs contained within the projection area IAn; and when pattern PA3 is exposed, pattern PA3 appears in all pixel PIXs contained within the projection area IAn.

[0127] In addition, in Figure 34, for the sake of simplicity, the vertical and horizontal arrangement of the pixels PIX in the projection area IAn is made to match the X'Y' coordinates. However, as shown in Figures 3 and 5, the vertical and horizontal arrangement of the pixels PIX is actually set to be tilted at an angle θk relative to the X'Y' coordinates, so that it appears in accordance with the moving coordinates of the substrate P, i.e., the XY coordinate system.

[0128] As shown in Figure 34, the exposure of the isolated pattern PA1 for all pixels PIX within the display area DPA is performed, for example, during the steps of forming the semiconductor layer, electrode layer, or via of the TFT. In this case, as explained in Figures 13-16, a telecentric error Δθt exceeding the allowable range will not occur. That is, as long as the illumination unit ILU and projection unit PLU are telecentrically adjusted with respect to the projected image of the isolated pattern projected by a single micromirror Msa in the open state, a telecentric error Δθt exceeding the allowable range will not occur. However, even for isolated patterns, when the isolated pattern is exposed on the substrate P at a pixel size of about tens of μm, as in the case of a display panel for a smartphone, there will still be about tens of micromirrors Msa in the open state closely arranged on the DMD10 along the X' and Y' directions. Therefore, even for isolated patterns, a telecentric error Δθt may occur depending on its size (pattern size).

[0129] Furthermore, in the peripheral region PPAx within area DA7 shown in Figure 33, the wiring extending mainly along the X direction (X' direction) is formed into a lattice pattern arranged at fixed intervals along the Y direction (Y' direction). Therefore, the influence of diffraction in the X' direction is small, and even if a centroidal error Δθt is generated, it is within the acceptable range.

[0130] Furthermore, as shown in Figure 34, the exposure of the line and gap pattern PA2 for all pixels within the display area DPA is performed, for example, in the steps of forming the wiring, power lines, ground lines, signal lines, and select lines of the electrode layer connecting the TFT. In this case, as explained in Figures 21-23, depending on the distance or line width between the lines and gaps, a telecentric error Δθt exceeding the allowable range may occur. Further, as shown in Figure 34, the exposure of the island pattern PA3 for all pixels within the display area DPA is performed, for example, in the steps of forming the embankment of the light-emitting portion of the pixel PIX or the electrode layer. The island pattern PA3 is often more than half (approximately 90% depending on the situation) of the pixel PIX area (approximately 300 μm square). In this case, as explained in Figures 18-20, the possibility of a telecentric error Δθt exceeding the allowable range is high.

[0131] Furthermore, in the peripheral region PPAx within area DA7 shown in Figure 33, the wiring extending primarily along the X direction (X' direction) is formed as a lattice pattern arranged at fixed intervals along the Y direction (Y' direction). Therefore, the influence of diffraction in the X' direction is small, and even if a centroidal error Δθt occurs, it is within an acceptable range. However, as explained in Figure 31, when there are lines and gaps in the peripheral region PPAx that are inclined relative to both the X' and Y' directions, a centroidal error Δθt may occur.

[0132] Based on the above, the data analysis unit 302A of the angle change determination unit (telecentric error determination unit) 302 in Figure 32 analyzes the overall depiction data MD7 of the region DA7 sent to the module MU7, and generates position information of each local region into multiple local regions about the X direction, and the shape of the pattern appearing in the local region, which is the isolated pattern PA1, the line and gap pattern PA2, or the island pattern PA3 shown in Figure 34. The telecentric error calculation unit 302B of the angle change determination unit (telecentric error determination unit) 302 in Figure 32 calculates the telecentric error Δθt corresponding to its line width or spacing when the shape information of the pattern appearing in the local region is the line and gap pattern PA2, and calculates the telecentric error Δθt corresponding to its size when the shape information of the pattern appearing in the local region is the island pattern PA3.

[0133] Furthermore, the telecentricity error calculation unit 302B can also perform a simplified calculation for the telecentricity error Δθt by calculating the ratio of the area of ​​the substrate P illuminated by the exposure light within each of the plurality of local regions divided along the X direction into multiple local regions, and then estimating the telecentricity error Δθt based on this ratio. This ratio can be set as the average density of micromirrors Msa among all the micromirrors Ms of DMD10 that are in the on state during the exposure of the local region. Therefore, when this density is a predetermined value, such as 50% or more, the telecentricity error Δθt can be estimated simply based on this density.

[0134] The same operation as described above is performed on the region DA10 shown in Figure 33. The angle change determination unit (telecentric error determination unit) 302 in Figure 32 calculates the telecentric error Δθt that may occur in each local area when the pattern of the projection area IA10 of the module MU10 is exposed, based on the drawing data MD10 from the storage unit 300. The region DA10 shown in Figure 33 contains patterns of multiple peripheral regions PPAy. In the peripheral regions PPAy, there are mainly lines and gap-like patterns formed by lines extending along the Y direction (Y' direction) and arranged at fixed intervals along the X direction (X' direction), so it is possible to generate a telecentric error Δθt that is above the allowable range.

[0135] Furthermore, the angle change determination unit (telecentric error determination unit) 302 in Figure 32 generates information SDT (including position information of the scanning exposure direction) related to the telecentric error Δθt calculated (estimated) as described above for each module MU1 to MU27, and sends it to the telecentric error correction unit 304. Based on the information SDT related to the telecentric error Δθt relative to each module MU1 to MU27, the telecentric error correction unit 304 selects at least one of the following mechanisms that meet the adjustment amount or adjustment accuracy: the first telecentric adjustment mechanism (drive unit 100C, etc.), the second telecentric adjustment mechanism (micro-motion mechanism 108D, etc.), and the third telecentric adjustment mechanism (micro-motion mechanism 110C, etc.) described in Figures 26 and 27, and outputs adjustment command information AS1 to AS27 to each module MU1 to MU27.

[0136] The adjustment command information AS1~AS27 from the telecentricity error correction unit 304 is sent to the corresponding telecentricity adjustment mechanism when each module MU1~MU27 actually performs the exposure operation, so as to correct the telecentricity error △θt in real time. The exposure control unit (sequencer) 306 controls the sending of the drawing data MD1~MD27 from the storage unit 300 to the modules MU1~MU27 and the sending of the adjustment command information AS1~AS27 from the telecentricity error correction unit 304 in sync with the scanning exposure (position movement) of the substrate P.

[0137] According to the embodiment described above, the pattern exposure apparatus includes: a DMD10 as a spatial light modulation element, having a large number of micromirrors Ms that are selectively driven based on drawing data MDn (n=1~27); an illumination unit ILU that illuminates the DMD10 with illumination light ILm at a predetermined incident angle θα; and a projection unit PLU that projects reflected light Sa (imaging beam) from the micromirrors Msa in the selected open state of the DMD10 onto a substrate P, and the pattern exposure apparatus projects and exposes a pattern corresponding to the drawing data MDn onto the substrate P. The pattern exposure apparatus includes an angle change determination unit (telecentric error determination unit) 302 that determines the angle change based on the micromirrors Msa in the open state of the DMD10. The distribution state (density or periodicity) of sa is used to predetermine (predict) the telecentric error (telecentric error) Δθt generated in the reflected light Sa projected from the projection unit PLU to the substrate P during pattern projection exposure; and the adjustment mechanism (drive unit 100C, micro-motion mechanism 108D, micro-motion mechanism 110C, etc.) adjusts the position of a part of the optical components (mirror 100, aperture stop 108B, condenser lens system 110, etc.) in the illumination unit ILU or the projection unit PLU according to the predetermined telecentric error Δθt. In this way, the telecentric error Δθt of the reflected light (imaging beam) Sa' generated by diffraction when the large number of micromirrors Ms of DMD10 are turned on can always be suppressed within the allowable range.

[0138] [Variation Example 1] As previously explained, depending on the distribution of the micromirrors Msa when the DMD10 is in the on state, the reflected light (imaging beam) Sa' reflected by the DMD10 will produce a telecentric error. Since the projection unit PLU is a reduced projection system, the telecentric error Δθt on the image plane side will be magnified by a multiple of the projection magnification Mp. The actual magnitude of the telecentric error Δθt will vary depending on the shape of the pattern generated by the DMD10. Therefore, the degree of telecentric error Δθt that will occur for each shape of several patterns can be measured in advance.

[0139] Figure 35 is a schematic diagram of the optical measurement section provided in the calibration reference section CU at the end of the substrate support 4B of the exposure apparatus EX shown in Figure 1. In Figure 35, the reflected light (imaging beam) Sa from DMD10 is imaged onto the optimal focusing plane (optimal imaging plane) IPo by the lens group G4 and G5 on the image plane side of the projection unit PLU, and the principal ray La of the reflected light Sa is parallel to the optical axis AXa. The first optical measurement section consists of the following components: a quartz plate 320, which is mounted on the upper surface of the calibration reference section CU; an imaging system 322 (objective lens 322a and lens group 322b) that magnifies and images the pattern image of DMD10 projected from the projection unit PLU through the quartz plate 320; a mirror 324; and an imaging element 326 including a CCDD or CMOS, which captures the magnified pattern image. In addition, the surface of the quartz plate 320 and the imaging surface of the imaging element 326 are conjugate.

[0140] The second optical measurement unit comprises the following components: a pinhole plate 340, mounted on the upper surface of the calibration reference unit CU; an objective lens 342, through which reflected light (imaging beam) Sa from the DMD10 projected by the projection unit PLU passes to form an image of the pupil Ep of the projection unit PLU (the intensity distribution of the imaging beam or light source image within the pupil Ep); and an imaging element 344, including a CCDD or CMOS sensor, to capture the image of the pupil Ep. That is, the imaging surface of the imaging element 344 of the second optical measurement unit is conjugate to the position of the pupil Ep of the projection unit PLU.

[0141] The substrate support 4B (calibration reference unit CU) can be moved two-dimensionally in the XY plane via the XY stage 4A. Therefore, the quartz plate 320 of the first optical measurement unit or the pinhole plate 340 of the second optical measurement unit is placed directly below the projection unit PLU of any of the modules MU1 to MU27 to be measured. The DMD10 generates reflected light Sa corresponding to various test patterns used for measurement. In the measurement of telecentric error by the first optical measurement unit, the substrate support 4B (calibration reference unit CU) or the entire projection unit PLU or the lens groups G4 and G5 are moved up and down to fix the defocusing amount of the surface of the quartz plate 320 relative to the optimal focusing surface IPo in the +Z and -Z directions, respectively.

[0142] Furthermore, based on the lateral deviation and defocusing amount (the micro-motion range of ±Z) of the test pattern images captured by the imaging element 326 when the image is defocused in the +Z direction and in the -Z direction respectively, the telecentric error Δθt can be measured. The imaging element 326 of the first optical measurement unit will capture the mirror surface of the DMD10 via the projection unit PLU, and therefore can also be used to identify the micromirrors Ms that are malfunctioning among the large number of micromirrors Ms of the DMD10. In addition, several typical test patterns (any type of pattern such as isolated, line and gap, or island) that may produce telecentric error Δθt can be generated from the DMD10, and the asymmetry of the intensity distribution of the projected image of the test pattern (as shown in Figure 24 above) can be measured by the imaging element 326 of the first optical measurement unit.

[0143] [Variation Example 2] Furthermore, in the measurement of telecentric error by the second optical measurement unit, the imaging element 344 measures the eccentricity of the intensity distribution of the imaging beam (Sa, Sa') formed at the pupil Ep of the projection unit PLU during the projection of the test pattern. At this time, the telecentric error Δθt can be measured based on the eccentricity of the intensity distribution within the pupil Ep and the focal length on the image plane side of the projection unit PLU. Also, as explained in Figures 13 to 15, only a specific individual micromirror Ms among the large number of micromirrors Ms of the DMD10 is set to the open state, and the imaging element 344 of the second optical measurement unit measures the positional relationship between the centroid of the intensity distribution formed at the pupil Ep and the optical axis AXa. When this positional relationship deviates, it can be known that the tilt angle θd of the specific open state micromirror Msa has an error from the specified value (e.g., 17.5°).

[0144] Although measurement time is required, by setting all the micromirrors Ms of the DMD10 to the on state one by one and measuring with the imaging element 344, the error of the tilt angle θd of each micromirror Ms (drive error) can also be determined. The error of the tilt angle θd of each micromirror Ms cannot be adjusted or corrected due to the inherent characteristics of the DMD10. However, when the micromirrors with large tilt angle θd errors are evenly distributed, a telecentric error caused by the amount of tilt angle θd error may occur.

[0145] For example, when the nominal (standard) tilt angle θd of the micromirror Ms in DMD10 is 17.5° and the driving error of this angle is ±0.5°, if the incident angle θα of the illumination light ILm towards DMD10 is 35.0°, the maximum telecentric error on the object plane side (DMD10 side) of the projection unit PLU is ±1°. Therefore, when the projection magnification Mp of the projection unit PLU is 1 / 6, the maximum telecentric error Δθt on the image plane side caused by the driving error of the micromirror Ms is ±6°. According to this modified example, the telecentric error Δθt caused by the driving error of the tilt angle θd of the micromirror Ms inherent in DMD10 can also be measured, and therefore, it can be adjusted (calibrated) before the actual pattern is exposed to correct this telecentric error Δθt.

[0146] [Variation Example 3] As described in the previous variation 1, before exposing the actual pattern onto the substrate P, the first optical measurement unit (image element 326) or the second optical system measurement unit (image element 344) is used to measure in advance the telecentric error Δθt that may occur in several typical pattern shapes (especially line and gap patterns and pad patterns) contained in the actual pattern. Furthermore, the correlation between the measured telecentric error Δθt and the pattern shape can be learned (stored) as a database in the exposure control unit 306, for example, shown in FIG32.

[0147] Typically, this type of exposure apparatus EX receives information such as various exposure conditions, drive unit settings, operation parameters, or operation sequences related to the actual exposure pattern of each layer of electronic components (such as display panels) formed on the substrate P, and uses this information as recipe information to perform a series of exposure operations. In the maskless mode where multiple drawing modules MU1-MU27 form dynamically changing pattern images through DMD10, as shown in Figures 1-6 of the exposure apparatus EX, the drawing data MD1-MD27 (see Figure 32) that controls the operation of the numerous micromirrors Ms of each DMD10 is sometimes also included as part of the recipe information. This recipe information is mostly stored and managed by the main control unit (computer) that provides overall control of the exposure apparatus EX.

[0148] Therefore, the data analysis unit 302A and the telecentric error calculation unit 302B of the adjustment control system TEC illustrated in Figure 32 compare the pattern morphology of each depiction data MD1~MD27 with the pattern morphology in the pre-learned (stored) database. Information related to the scanning exposure position (correction position information) of the portion where the telecentric error Δθt exceeds the allowable range (e.g., the local area in the X direction within region DA7 or DA10 in Figure 33), and information related to the angle change of the imaging beam (including reflected light Sa', including diffracted light) from the telecentric state (information related to the tilt direction or tilt amount, or the tilt correction amount) are used as one of the newly generated formula information (equivalent to information STD in Figure 32). Furthermore, if the pattern morphology in the entire region DAn (n=1~27) on the substrate P exposed by each projection region IAn (n=1~27) remains unchanged, then information related to the scanning exposure position (correction position information) is not necessarily needed.

[0149] Furthermore, from the descriptive data related to the actual exposure pattern contained in the formula information, important pattern portions with high standard values ​​for linewidth accuracy, positional accuracy, or coincidence accuracy are extracted and pre-registered in the formula information as test patterns for telecentric error measurement. Before switching to the aforementioned formula information and starting actual exposure, the DMD10 can project an image of the registered test pattern, and the first optical measurement unit (image sensor 326) or the second optical system measurement unit (image sensor 344) can be used to measure the telecentric error Δθt, generating adjustment (correction) information.

[0150] According to the above description, in this modified example, the pattern exposure apparatus includes: an illumination unit ILU that illuminates a DMD10, which is a spatial light modulation element, with illumination light ILm, the DMD10 having a large number of micromirrors Ms that switch between on and off states based on the drawing data MDn; and a projection unit PLU that directs the reflected light from the on-state micromirrors Msa of the DMD10 as an imaging beam (Sa') to project an image of the pattern corresponding to the drawing data MDn onto a substrate P. The pattern exposure apparatus includes a control unit that controls the angular variation (telecentric error Δ) of the imaging beam (Sa') generated by the distribution density of the on-state micromirrors Msa of the DMD10. Information related to θt) and the depiction data MDn are saved together as formula information; and the adjustment mechanism (drive unit 100C, micro-motion mechanism 108D, micro-motion mechanism 110C, etc.) when driving DMD10 to expose the pattern onto substrate P based on the formula information, adjusts the position or angle of at least one optical component (mirror 100, 112, aperture stop 108B, condenser lens system 110 or DMD10, etc.) in the illumination unit ILU (or projection unit PLU) according to information related to the angle change (Δθt), so that the angle change (telecentric error) of the imaging beam (Sa') caused by diffraction when the numerous micromirrors Ms of DMD10 are turned on can be suppressed to an allowable range.

[0151] [Variation Example 4] As explained in the previous variation 3, when the DMD10 projects an image of a test pattern corresponding to an important pattern portion contained in the formula information, and the first optical measurement unit (image capturing element 326) is used for measurement, the first optical measurement unit (image capturing element 326) measures the intensity distribution of the projected test pattern image. Therefore, as shown in the previous Figure 24, the degree of image symmetry degradation (asymmetry) can be analyzed by, for example, the exposure control unit 306 shown in Figure 32. Then, the telecentricity adjustment mechanism (drive unit 100C, micro-motion mechanism 108D, micro-motion mechanism 110C, etc.) in the illumination unit ILU or the eccentricity micro-motion mechanism of the lens group or lens element in the projection unit PLU can also be controlled to reduce image asymmetry.

[0152] At this point, for example, in the process of making a predetermined quantitative adjustment using a telecentric error adjustment mechanism or an eccentric micro-motion mechanism, the asymmetry of the image of the test pattern can be reduced by repeatedly learning and using the first optical measurement unit (image capturing element 326) to measure the degree of asymmetry of the image. Therefore, as long as the degree of asymmetry of the projected pattern image is correlated with the adjustment amount of the telecentric error adjustment mechanism or the eccentric micro-motion mechanism used to reduce the asymmetry and databaseed, the telecentric error Δθt can be quantitatively determined, or this information can be used without utilizing it.

[0153] According to the above description, according to this modified example, the pattern exposure apparatus includes: an illumination unit ILU that illuminates a DMD10, which is a spatial light modulation element, with illumination light ILm, the DMD10 having a large number of micromirrors Ms that switch between on and off states based on the drawing data MDn; and a projection unit PLU that directs reflected light from the on-state micromirrors Msa of the DMD10 as an imaging beam (Sa') to project an image of a pattern corresponding to the drawing data MDn onto a substrate P. The pattern exposure apparatus is further characterized by: a measurement unit (image capturing element 326) that measures the image beam (Sa') generated based on the distribution density of the micromirrors Msa corresponding to the on-state of the DMD10. The degree of asymmetry of the pattern image caused by telecentric error is measured; and the adjustment mechanism (drive unit 100C, micro-motion mechanism 108D, micro-motion mechanism 110C, etc.) adjusts the position or angle of at least one optical component (mirror 100, 112, aperture stop 108B, condenser lens system 110 or DMD10, etc.) in the illumination unit ILU (or projection unit PLU) to reduce the measured asymmetry. This can reduce the asymmetry of the pattern image caused by the telecentric error of the imaging beam (Sa') generated by diffraction when the numerous micromirrors Ms of DMD10 are in the open state.

[0154] In the description of the first embodiment or various modifications above, the isolated pattern as a pattern state is not necessarily limited to the case of a single micromirror Msa in the open state among all the micromirrors Ms of DMD10. For example, when 2, 3 (1×3), 4 (2×2), 6 (2×3), 8 (2×4) or 9 (3×3) micromirrors Msa in the open state are closely arranged and the micromirrors Ms around them are, for example, more than 10 micromirrors Msb in the closed state in the X' and Y' directions, it can also be regarded as an isolated pattern. Conversely, when 2, 3 (1×3), 4 (2×2), 6 (2×3), 8 (2×4), or 9 (3×3) micromirrors Msb in the closed state are closely arranged, and the surrounding micromirrors Ms in the X' and Y' directions are, for example, several or more (corresponding to several times the size of the isolated pattern) closely become micromirrors Msa in the open state, it can also be regarded as an island pattern.

[0155] Furthermore, the line and gap patterns used as pattern types are not necessarily limited to the pattern shown in Figure 21, which alternates between one row of open micromirrors Msa and one row of closed micromirrors Msb. For example, it could also be a pattern that alternates between two rows of open micromirrors Msa and two rows of closed micromirrors Msb, three rows of open micromirrors Msa and three rows of closed micromirrors Msb, or two rows of open micromirrors Msa and four rows of closed micromirrors Msb. Regardless of the pattern type, as long as the distribution (density or compactness) of the open micromirrors Ms in each unit area (e.g., an area of ​​100×100 micromirrors Ms) of all the micromirrors Ms in the DMD10 is determined, the degree of telecentric error Δθt or asymmetry can be easily determined by simulation or other means.

[0156] [Second Implementation] Figure 36 is a schematic diagram showing the structure of one of the drawing modules provided in the pattern exposure apparatus of the second embodiment. The orthogonal coordinate system X'Y'Z in Figure 36 is, for example, set to be the same as the coordinate system X'Y'Z in the previous Figure 6. In this embodiment, the illumination light ILm illuminating the digital mirror element (DMD) 10', which is a spatial light modulation element, from the illumination unit ILU is incident on the light via a cubic polarizing beam splitter PBS, which acts as a beam splitter. In Figure 36, the central face Pcc of the DMD 10' is set to be perpendicular to the optical axis AXa of the two telecentric projection units PLU, and the polarizing beam splitter PBS is arranged in the optical path between the DMD 10' and the projection unit PLU. The polarizing splitting surface of the polarizing beam splitter PBS is arranged in such a way that it is rotated 45° from the X'Y' plane about a line parallel to the Y' axis, so that it intersects the optical axis AXa at 45°.

[0157] The illumination light ILm, incident on the side of the polarizing beam splitter PBS via the reflector 112' and condenser lens system 110' of the illumination unit ILU, is set to be linearly polarized (S-polarized) in the Y' direction in Figure 36, and more than 95% of the light is reflected by the polarization splitting surface of the polarizing beam splitter PBS in the +Z direction. The illumination light ILm, traveling from the polarizing beam splitter PBS in the +Z direction, becomes circularly polarized through the 1 / 4 wavelength plate QP, thereby illuminating the DMD10' with a uniform illuminance distribution.

[0158] In this embodiment, the reflective surface of the micromirror Ms of DMD10' is configured such that, when the reflected light is incident on the projection unit PLU in the open state, it is in a flat position parallel to the neutral plane Pcc, and when the reflected light is not incident on the projection unit PLU in the closed state, it is tilted relative to the neutral plane Pcc at a fixed angle θd. Therefore, during the non-exposure period when DMD10' does not expose any pattern, all micromirrors Ms are in an initial state tilted at angle θd. Thus, unlike the states shown in Figures 11 and 12, the micromirror Msa in the open state is in a position parallel to the neutral plane Pcc, and the micromirror Msb in the closed state is in a position tilted at an angle θd from the neutral plane Pcc.

[0159] Furthermore, in the structure shown in Figure 36, the illumination light ILm from the surface light source image (an aggregate of point light sources SPF) formed by the exit surface of the micro-compound eye (MFE) lens 108A within the illumination unit ILU provides Kohler illumination to the DMD10'. The pupil Ep of the projection unit PLU is set to be conjugate with the surface light source image on the exit surface of the MFE lens 108A. The reflected light (imaging beam) Sa' from the micromirror Msa in the open state of the DMD10' travels retrogradely in the 1 / 4 wavelength plate QP and is converted into linearly polarized light (P-polarized light) in the X' direction, passing through the polarization splitting surface of the polarization beam splitter PBS and incident on the projection unit PLU. In this embodiment, the principal ray of the illumination light ILm is set to be perpendicular to the central plane Pcc of DMD10'. Therefore, the principal ray of the reflected light (imaging beam) Sa' from the micromirror Msa in the open state becomes parallel to the optical axis AXa in terms of geometric optics, and it can be considered that no large telecentric error △θt will be generated.

[0160] However, since the driving angle of the micromirror Ms in DMD10' may produce a predetermined error, a telecentric error Δθt may sometimes occur as a result. Figure 37 is an exaggerated representation of the state of the micromirror Ms when projecting an isolated minimum linewidth pattern using DMD10'. In Figure 37, the closed micromirror Msb, viewed in the X'Z plane, is tilted at the initial angle θd, and the reflected light Sg formed by the illumination light ILm is reflected at a double angle 2θd relative to the optical axis AXa. On the other hand, the open micromirror Msa is driven to tilt from its initial position by an angle θd, making the reflecting surface parallel to the neutral plane Pcc. At this time, if there is a driving error Δθd, the open micromirror Msa will tilt from its initial position by θd + Δθd.

[0161] Therefore, the principal ray of the reflected light (imaging beam) Sa from the isolated, open micromirror Msa is generated by an angle 2·Δθd relative to the optical axis AXa. As illustrated in the previous embodiment, if the distances between the micromirrors Ms of DMD10', Pdx and Pdy, are 5.4 μm, the initial angle θd is 17.5°, and the projection magnification Mp of the projection unit PLU is 1 / 6, then the maximum driving error Δθd is ±0.5°. At this time, the maximum telecentric error of the reflected light (imaging beam) Sa on the object plane side is ±1°, and the maximum telecentric error Δθt on the image plane side is ±6°. Generally speaking, the driving error Δθd of each of the numerous micromirrors Ms of DMD10' is less scattered and is mostly a specific value (average value) within the maximum error range. The maximum value of the driving error Δθd (±0.5°) is within the allowable range of the DMD10' product specifications. Therefore, micromirrors Msa in the open state with an average driving error Δθd of, for example, ±0.25° or less can be selected from several manufacturing batches. In summary, under the influence of the driving error Δθd, the point image intensity distribution of the reflected light (imaging beam) Sa in the pupil Ep of the projection unit PLU becomes a distribution of the sinc² function as shown in Figure 16.

[0162] Figure 38 is a schematic diagram showing the point image intensity distribution Iea of ​​the diffracted image of the micromirror Msa in the pupil Ep, which is in an isolated, open state as shown in Figure 37. As shown in Figure 38, the center position of the point image intensity distribution Iea is laterally displaced by ΔDx in the X' direction from the position of the optical axis AXa within the pupil Ep. The lateral displacement ΔDx corresponds to the magnitude of the driving error Δθd of the micromirror Msa in the open state. Therefore, the telecentric error Δθt caused by the driving error Δθd of the actual open state micromirror Msa can be measured using the first optical measurement unit (image element 326) or the second optical measurement unit (image element 344) described in Figure 35, and corrected by the telecentric error adjustment mechanism, thereby suppressing the telecentric error Δθt caused by the driving error Δθd.

[0163] This type of telecentric error Δθt, caused by the driving error Δθd of the micromirror Ms, also occurs in the case of the DMD10 in the previous first embodiment. For example, when projecting the isolated pattern as illustrated in Figures 13 and 14, the telecentric error Δθd caused by diffraction does not occur, but the telecentric error Δθt caused by the driving error Δθd may occur. Therefore, when the DMD10 in the first embodiment projects the isolated pattern, it is ideal to also control the telecentric error adjustment mechanism to reduce the telecentric error Δθt on the image plane side caused by the driving error Δθd to an acceptable range (e.g., within ±2°, ideally within ±1°).

[0164] Next, referring to Figure 39, we will explain the situation where most of the micromirrors Ms of DMD10' are closely arranged in the open state as micromirrors Msa. Figure 39 is an exaggerated representation of the state of the micromirrors Ms when a large island-shaped pattern is projected by DMD10'. In Figure 39, the open-state micromirrors Msa, observed in the X'Z plane, ideally function as planar diffraction gratings arranged at a spacing Pdx in the X' direction. At this time, it is also assumed that each open-state micromirror Msa has a driving error Δθd.

[0165] In the case of Figure 39, the diffraction angle θj of the j-th order diffracted light Idj can also be obtained based on equation (2) explained in Figure 19 above.

[0166] [Number 5] sinθj=j(λ / Pdx)-sinθα…(2) If we assume the distance Pdx between the micromirrors Msa in the open state is 5.4 μm, the wavelength λ is 343.333 nm, and the incident angle θα of the illumination light ILm is 0°, then the diffraction angle θ0 (measured from the optical axis AXa) of the 0th order diffracted light Id0 contained in the reflected light (imaging beam) Sa' from DMD10' is naturally 0°. Furthermore, the diffraction angle θ1 of the ±1st order diffracted light (-Id1, +Id1) contained in the reflected light (imaging beam) Sa' is approximately ±3.645° on the object side of the projection unit PLU, sandwiching the optical axis AXa.

[0167] Figure 40 is a schematic diagram on the surface of the pupil Ep of the projection unit PLU, showing an example of the generation direction of the central rays of the 0th order diffraction Id0 and ±1st order diffraction (-Id1, +Id1) contained in the reflected light (imaging beam) Sa' in the state of Figure 39. Similar to the previous Figure 38, due to the driving error Δθd of the micromirror Msa in the open state, the point image intensity distribution Iea is laterally displaced by ΔDx from the optical axis AXa. The actual intensity distribution of the 0th order diffraction Id0 and ±1st order diffraction (-Id1, +Id1) formed in the pupil Ep is obtained by considering the size (σ value) of the surface light source (the light source image Ips shown in the previous Figure 9) that may be formed in the pupil Ep, and by the convolution integral (convolution operation) of the point image intensity distribution Iea (sinc2 function) with the laterally displaced ΔDx and Equation (2).

[0168] As shown in Figure 40, the point image intensity distribution Iea is laterally shifted by ΔDx from the optical axis AXa, but the 0th order diffracted light Id0 becomes parallel to the optical axis AXa, and the ±1st order diffracted lights (-Id1, +Id1) are generated symmetrically with respect to the 0th order diffracted light Id0. As a result, the actual intensity distribution of the 0th order diffracted light Id0 obtained by convolution integral is located at the center of the pupil Ep, thus avoiding a telecentric error Δθt. However, the peak value of the actual intensity distribution (approximately circular) of the 0th order diffracted light Id0 will decrease from the peak value Io of the point image intensity distribution Iea. Furthermore, the peak values ​​of the actual intensity distributions (approximately circular) of the ±1st order diffracted lights (-Id1, +Id1) are also significantly reduced. The change in light intensity of the 0th order diffracted light Id0 or the ±1st order diffracted light (-Id1, +Id1) can be determined by simulation or by measuring the projected image of the test pattern using the first optical measurement unit (image capturing element 326) shown in Figure 35.

[0169] The diffraction angle ±θ1 (≒3.645°) of the ±1st order diffracted light (-Id1, +Id1) on the object plane side, and the diffraction angle ±θ1' on the image plane side, are equal to θ1' = θ1 / Mp ≒ ±21.87°, since this is a multiple of the projection magnification Mp (1 / 6). This angle θ1', when converted to the numerical aperture NAi on the image plane side of the projection unit PLU, is approximately 0.37. If the numerical aperture NAi on the image plane side is, for example, around NAi = 0.30, then approximately half of the actual intensity distribution (circular shape) of each of the ±1st order diffracted light (-Id1, +Id1) will not pass through the pupil Ep. Furthermore, when the numerical aperture NAi on the image plane side of the projection unit PLU is about 0.25, the actual intensity distribution of the ±1st order diffraction light (-Id1, +Id1) is almost entirely located outside the opening of the pupil Ep, and the reflected light (imaging beam) Sa' projected onto the substrate P is mainly composed of the 0th order diffraction light Id0.

[0170] In the typical incident illumination method of this embodiment, when most of the micromirrors Msa in the DMD10' that are in the open state corresponding to the large island pattern are closely spaced, no significant telecentric error Δθt due to diffraction occurs on the image plane side. However, the amount of light reflected (imaging beam) Sa' that forms the island pattern will decrease depending on the magnitude of the driving error Δθd (lateral displacement ΔDx) of the open micromirrors Msa. If this decrease in light amount is large, adverse effects such as increased dimensional error or deterioration of the photoresist image of the island pattern appearing after development of the substrate P will occur.

[0171] Therefore, as shown in Figure 39, when the micromirror Msa in the open state is exposed to a mostly dense island pattern, the purpose is to correct the decrease in the amount of reflected light (imaging beam) Sa' caused by the driving error △θd, rather than to correct the telecentric error △θt. The telecentric error adjustment mechanism (driving unit 100C, micro-motion mechanism 108D, micro-motion mechanism 110C, etc.) in the illumination unit ILU is adjusted to finely adjust the incident angle θα (designed to be 0°) of the illumination light ILm toward DMD10'.

[0172] This kind of light intensity variation error in the reflected light (imaging beam) Sa' caused by the driving error Δθd of the micromirror Msa in the open state may also occur when the DMD10 is illuminated with illumination light ILm using the tilted illumination method as in the previous first embodiment. Therefore, it is preferable to consider the driving error Δθd to correct the telecentric error Δθt. Furthermore, when the light intensity variation error of the reflected light (imaging beam) Sa' becomes within the allowable range (e.g., 10%) or more due to the correction of the telecentric error Δθt, the illuminance adjustment filter 106 shown in Figure 26 can be adjusted to improve the transmittance of the illumination light ILm. Therefore, information related to the light intensity variation error of the reflected light (imaging beam) Sa' caused by the driving error Δθd of the micromirror Msa in the open state can also be generated as part of the formulation information and stored in the main control unit (computer) so that this adjustment can be performed.

[0173] Furthermore, since the light intensity variation error of the reflected light (imaging beam) Sa' is generated in the downward direction, it can also be addressed by increasing the power of the beams LB1-LB4 from each laser source FL1-FL4 as illustrated in Figure 29. However, in order to maximize productivity (takt), in most cases, each laser source FL1-FL4 oscillates at approximately full power to generate beams LB1-LB4, and sometimes further power increases are not desired. The same applies to the illuminance adjustment filter 106, where sometimes it is not possible to further increase the transmittance. In such cases, by reducing the scanning speed of the substrate P in the X direction during scanning exposure (the moving speed of the XY stage 4A in Figure 1), the decrease in exposure (dose) to the photoresist layer of the substrate P can be compensated. At this time, the switching cycle (frequency) of the micromirror of DMD10' (or DMD10) in the off / on state is also adjusted according to the scanning speed of the substrate P.

[0174] Furthermore, at least one of the following errors that is particularly significant can be identified: the telecentric error Δθt of the reflected light (imaging beam) Sa' projected onto the substrate P; the asymmetry error of the pattern image caused by the telecentric error Δθt (refer to Figure 24); or the light quantity variation error of the reflected light (imaging beam) Sa' caused by the driving error Δθd of the micromirror Msa in the open state. The two-dimensional tilt of at least one optical component in the illumination unit ILU or the projection unit PLU, or DMD10' (or DMD10), can be adjusted to reduce the error.

[0175] As can be clearly seen from Figure 40, the intensity of the diffracted light Id0 is affected not only by the driving error Δθd, but also by the telecentric error Δθt caused by the diffraction phenomenon due to the pattern's shape (isolated, L&S, island, etc.). Consequently, the lateral displacement of the diffracted light Id0, which corresponds to the zeroth order light in the Sinc2 function distribution, also changes, resulting in a decrease in the intensity of the diffracted light Id0. Even if the adjustment components within the illumination optical system, or the orientation (tilt) of DMD10' or DMD10, are adjusted to make the telecentric error Δθt, which includes the driving error Δθd, zero, the intensity of the diffracted light Id0 will still decrease. Therefore, ideally, the overall light intensity variation (mainly a decrease in illuminance) that may accompany the telecentric error Δθt corresponding to the shape of the exposed pattern should be predicted (simulated) beforehand, or the projection state of the pattern should be measured using the first optical measurement unit (image element 326), thereby correcting the illuminance during actual exposure.

[0176] According to this embodiment, the component manufacturing method involves illuminating a DMD10' (or DMD10) with a large number of micromirrors Ms that switch between on and off states based on the drawing data MDn, using illumination light ILm from an illumination unit ILU as a spatial light modulation element. A projection unit PLU is then used to project an image of a component pattern corresponding to the drawing data MDn onto a substrate P, thereby forming a component pattern on the substrate P. In this component manufacturing method, the telecentricity error of the imaging beam (Sa') generated based on the distribution of the micromirrors Msa in the on state of DMD10' (or DMD10) is addressed, or the driving error Δθ caused by the on-state micromirrors Msa is addressed. The method involves determining the change in light intensity of the imaging beam (Sa') generated by d; and adjusting the setting state (position or angle) of at least one optical component (which may be a mirror 100, 112, aperture stop 108B, condenser lens system 110, illuminance adjustment filter 106, or DMD10, DMD10') in the illumination unit ILU (or projection unit PLU) to reduce the determined telecentric error or change in light intensity. This allows for the formation of an element manufacturing method that reduces the telecentric error or change in light intensity caused by the diffraction effect or driving error Δθd when the micromirror Ms of DMD10' (or DMD10) is in the open state, thereby forming a faithful pattern based on the drawing data.

[0177] Furthermore, according to this embodiment, the component manufacturing method involves irradiating a DMD10' (DMD10), which has a large number of micromirrors Ms that switch between on and off states based on the drawing data MDn, with illumination light ILm from an illumination unit ILU onto a projection unit PLU as an imaging beam. The reflected light Sa' from the on-state micromirrors Msa of the DMD10' (DMD10) is incident on the PLU as an imaging beam, projecting a pattern image of the electronic component corresponding to the drawing data MDn onto a substrate P, thereby forming an electronic component on the substrate P. In this component manufacturing method, the telecentric error Δθt of the reflected light (imaging beam) Sa' generated by diffraction corresponding to the distribution state of the on-state micromirrors Msa of the DMD10' (DMD10), the asymmetry error of the pattern image caused by the telecentric error Δθt, or... A determination stage is established to determine at least one of the following errors that are particularly significant: the telecentric error or the light intensity variation error of the reflected light (imaging beam) Sa', which is caused by the driving error Δθd of the micromirror Msa in the open state. Or, two errors that are combined (e.g., telecentric error and light intensity variation error, or telecentric error and asymmetry error). This determination stage is then implemented when the pattern image is exposed onto the substrate P by driving DMD10' (DMD10), and the setting state (position or angle) of at least one optical component in the illumination unit ILU or projection unit PLU is adjusted to reduce the determined at least one error. This allows for the reduction of the telecentric error, asymmetry error, or light intensity variation error caused by the diffraction effect or driving error Δθd of the micromirror Msa in the open state of DMD10' (or DMD10), thereby enabling the formation of an element manufacturing method based on a faithful pattern of the depicted data.

[0178] 1a, 1b, 1c, 1d: Active vibration damping unit 2: Base 3: Fixed Plate 4A:XY platform 4B: Substrate support 5: Optical fixing plate 6a, 6b, 6c, 6d: Main pillars 10, 10': Digital Mirror Element (DMD) 10M: Installation Section 100, 102: Mirror 100A: Tilting Mechanism 100B: Parallel Mechanism 100C: Drive Unit 101: Contact Lens 104: Input Lens System 104A, 104B, 104C: Lens groups 106: Illuminance Adjustment Filter 106A: Retaining Member 106B: Drive mechanism 108: Optical Integrator 108A: MFE lens 108B: Variable Aperture Stop 108C: Retention section 108D: Micro-motion mechanism 109A: Spectrometer 109B: Condensing Lens 109C: Fiber bundle 109D: Optoelectronic Components 110, 110': Condensing lens system 110A: Front group lens system 110B: Rear Group Lens System 110C: Micro-motion mechanism 112: Tilting Mirror 112': Reflector 114: Movable light-blocking sheet 116: Lens Group 1 118: Second lens group 120: Focus sensor 200:Beam synthesis department 202: Delay Unit 202A: Delayed Optical Path Section 202B: Segmentation and Synthesis Section 204: Beam Switching Unit 300: Storage Department 302: Telecentric Error Determination Unit 302A: Data Analysis Department 302B: Telecentric Error Calculation Unit 304: Telecentric Error Correction Unit 306: Exposure Control Department 320: Quartz Plate 322: Imaging System 322a: Objective lens 322b: Lens group 324: Reflector 326: Camera components 340: Pinhole Plate 342: Objective lens 344: Camera element ALG: Alignment System APh: Circular area AS1~AS27: Adjustment Instruction Information AXa, AXb, AXc: Optical axes CU: Calibration reference section DA: Region DPA: Display Area Ef: Irradiated area EL: Lens element Ep: Light Pupil EX: Exposure device EXA: Exposure Area FB1~FB27: Fiber optic bundles FB1a~FB9a: Incident end FBU: Fiber Optic Unit FL1~FL7: Laser light source G1, G2, G3, G4, G5: Lens groups Hpa, Hpb: Intensity distribution IA1~IA27: Projection Area Idj: Diffraction light Ie: Light Intensity Iea: Point image intensity distribution IFX, IFY1~IFY4: Interferometers ILm: Illumination light ILU: Lighting Unit Io: Peak light intensity Ips: Light source image IPo: Optimal Focus Isa:beam ia, ic: reduced image k1~k3, Lh, Lv, Lx': lines LB1~LB7, LBa, LBb: Beams La, Lc, Lp: Principal Ray MD1~MD27: Descriptive Data MU(A), MU(B), MU(C): Exposure Module MU1~MU27: Modules Mp: Projection magnification Ms, Msa, Msb, MSc: Microscope NAi, NAo: Numerical aperture OLa, OLb, Olc: Continuation part P: Substrate PA1, PA2, PA3: Pattern PBS: Polarizing Beam Splitter Pd: Spacing Pdx, Pdy: Spacing Pg: Minimum line width (minimum pixel size) Pcc: Neutral facade PIX: pixels PLf, PLf': Image field PLU: Projection Unit PM: Rotating Multifaceted Mirror PPAx, PPAy: Surrounding Area QP: 1 / 4 Wavelength Plate Rs: Resolution (minimum resolution linewidth) ri, re: radius Sa, Sa', Sc, Sg: Reflected light SDT: News SPF: Point Light Source TEC: Adjustment control system △θt: Telecentric error λ: wavelength θj: Angle

Claims

1. A pattern exposure apparatus comprising: an illumination unit that illuminates a spatial light modulation element having a plurality of micromirrors, the plurality of micromirrors being driven to switch between an on state and an off state based on drawing data; and a projection unit that directs reflected light from the on-state micromirrors of the spatial light modulation element as an imaging beam to project an image of a pattern corresponding to the drawing data onto a substrate, wherein... The aforementioned pattern exposure apparatus includes: a control unit that stores information related to the angle change of the imaging beam generated based on the distribution density of the micromirrors in the on state of the spatial light modulation element, together with the depiction data, as recipe information; and an adjustment mechanism that, when driving the spatial light modulation element based on the recipe information to expose a pattern onto the substrate, adjusts the position or angle of at least one optical component in the illumination unit or the projection unit, or the angle between the optical axis of the illumination light incident on the spatial light modulation element and the normal to the surface on which the spatial light modulation element is disposed, based on the aforementioned information related to the angle change.

2. The pattern exposure apparatus as described in claim 1, wherein, The projection unit has an exit pupil through which the imaging beam passes with a predetermined opening diameter. The adjustment mechanism is adjusted to reduce the eccentricity of the distribution of the imaging beam within the exit pupil as defined by the information related to the angle change.

3. The pattern exposure apparatus of claim 2, further comprising: a stage device that supports and moves the substrate on the image plane side of the projection unit, the stage device having an optical measurement unit for measuring the distribution of the imaging beam formed in the exit pupil of the projection unit.

4. The pattern exposure apparatus as described in claim 3, wherein, The control unit generates information related to angle change as the telecentric error based on the above-described drawing data, and determines in advance whether the telecentric error is above the predetermined allowable range specified according to the distribution density of the micromirror in the above-described open state. The adjustment mechanism performs an adjustment operation when the pattern is exposed with the telecentric error being above the predetermined allowable range.

5. The pattern exposure apparatus as described in claim 4, wherein, The control unit stores drawing data for a test pattern that corresponds to a pattern shape whose telecentricity error may be above the predetermined allowable range. The optical measurement unit measures the distribution of the imaging beam from the spatial light modulation element driven by the drawing data for the test pattern within the exit pupil to confirm the telecentricity error.

6. The pattern exposure apparatus as described in any of claims 1 to 5, wherein, The aforementioned illumination unit includes: an optical integrator that allows a light beam from the light source device to enter; and a condenser lens system that directs the illumination light from the surface light source generated by the optical integrator toward the mirror surface of the spatial light modulation element for Kohler illumination. The aforementioned projection unit has an exit pupil that is optically conjugate to the position of the surface light source generated by the optical integrator, and projects a reduced image of the pattern generated by the micromirror in the aforementioned open state of the spatial light modulation element.

7. The pattern exposure apparatus as claimed in claim 6, wherein, The aforementioned adjustment mechanism includes an adjustment mechanism for adjusting the incident position or incident angle of the light beam incident on the aforementioned optical integrator, or an adjustment mechanism for adjusting the relative positional relationship between the aforementioned optical integrator and the aforementioned condenser lens system about the eccentric direction, so as to change the incident angle of the illumination light irradiating the aforementioned spatial light modulation element.

8. The pattern exposure apparatus as claimed in claim 6, wherein, The aforementioned control unit further stores information related to the illuminance variation of the imaging beam generated based on the density distribution of the micromirrors in the aforementioned on state of the aforementioned spatial light modulation element, as one of the aforementioned formulation information.

9. The pattern exposure apparatus as claimed in claim 8, wherein, The aforementioned lighting unit includes an illuminance adjustment filter that causes a change in the illuminance of the lighting light illuminating the aforementioned spatial light modulation element, and the aforementioned adjustment mechanism further includes a mechanism for controlling the aforementioned illuminance adjustment filter based on the aforementioned information related to the illuminance change.

10. The pattern exposure apparatus as claimed in claim 3, wherein, The control unit further stores information related to illuminance variation of the imaging beam generated by the micromirror density distribution in the above-mentioned open state of the spatial light modulation element, as one of the above-mentioned formula information. The stage device adjusts the movement speed of the projection image generated by the micromirror in the above-mentioned open state during scanning exposure on the substrate based on the above-mentioned information related to illuminance variation.

11. The pattern exposure apparatus as described in any of claims 2 to 5, wherein, The projection unit includes: a plurality of lenses disposed in front of and behind the exit pupil; and an optical component for correcting the image plane tilt caused when the angle of the spatial light modulation element is adjusted by the adjustment mechanism.

12. The pattern exposure apparatus of any one of claims 2 to 5, wherein, The projection unit has a plurality of lenses disposed in front of and behind the exit pupil. A portion of the plurality of lenses is positioned in an eccentric direction to correct the image plane tilt caused when the angle of the spatial light modulation element is adjusted by the adjustment mechanism.

13. A pattern exposure apparatus comprising: a spatial light modulation element having a plurality of micromirrors selectively driven based on drawing data; an illumination unit illuminating the spatial light modulation element with illumination light at a predetermined incident angle; and a projection unit that projects reflected light from the selected on-state micromirrors of the spatial light modulation element as an imaging beam onto a substrate, wherein the pattern exposure apparatus projects and exposes a pattern corresponding to the drawing data onto the substrate, wherein... The above-mentioned pattern exposure apparatus includes: a telecentric error determination unit, which determines in advance the telecentric error generated in the imaging beam projected from the projection unit onto the substrate during the projection exposure of the pattern, based on the distribution state of the micromirrors in the open state of the spatial light modulation element; and an adjustment mechanism, which adjusts the position or angle of a portion of the optical components of the illumination unit or the projection unit to correct the telecentric error.

14. The pattern exposure apparatus as claimed in claim 13, wherein, The aforementioned telecentric error determination unit analyzes the density of the micromirrors in the open state based on the aforementioned depiction data and the aforementioned pattern to determine the magnitude of the aforementioned telecentric error.

15. The pattern exposure apparatus as claimed in claim 13, wherein, Based on the above-described data, the telecentric error determination unit determines the magnitude of the telecentric error when more than half of the micromirrors of the spatial light modulation element are in the on state.

16. The pattern exposure apparatus as claimed in claim 13, wherein, When the non-driven, flat reflective surface is designated as the neutral plane, the numerous micromirrors of the aforementioned spatial light modulation element are arranged in a two-dimensional configuration along the mutually orthogonal first and second directions within the aforementioned neutral plane. Based on the aforementioned depiction data, the aforementioned telecentric error determination unit determines the magnitude of the aforementioned telecentric error when several or more of the aforementioned micromirrors adjacent to each other in the aforementioned first and second directions are in the aforementioned open state.

17. The pattern exposure apparatus as claimed in claim 13, wherein, Based on the above-described data, when the pattern to be exposed is a line or gap pattern, the above-described telecentric error determination unit determines the magnitude of the telecentric error based on the periodicity and periodic direction of the arrangement of the micromirrors in the open state of the micromirrors in the spatial light modulation element.

18. The pattern exposure apparatus of any one of claims 14 to 17, wherein, When the magnitude of the telecentric error determined by the telecentric error determination unit exceeds a predetermined allowable range, the adjustment mechanism adjusts the position or angle of the optical component.

19. The pattern exposure apparatus as claimed in claim 18, wherein, The aforementioned allowable range is set to within ±2° as the tilt angle of the principal ray of the imaging beam from the projection unit toward the substrate relative to the optical axis.

20. A pattern exposure apparatus as described in any of claims 13 to 17, wherein, The aforementioned lighting unit includes: a surface light source component that allows a light beam from a laser light source device to be incident on it to generate the aforementioned illumination light; and a condenser lens system that allows the illumination light from the aforementioned surface light source to be incident on the reflective surface of the aforementioned spatial light modulation element for Kohler illumination; and an adjustment mechanism that adjusts the relative positional relationship between the aforementioned surface light source and the aforementioned condenser lens system with respect to the eccentric direction.

21. The pattern exposure apparatus as claimed in claim 20, wherein, The aforementioned adjustment mechanism includes a first telecentric adjustment mechanism, which shifts the position of the light beam from the aforementioned laser light source device incident on the aforementioned surface light source component in an eccentric direction.

22. The pattern exposure apparatus of claim 20, wherein, The aforementioned adjustment mechanism includes a second telecentric adjustment mechanism that displaces the position of the aforementioned surface light source component relative to the beam from the aforementioned laser light source device in an eccentric direction.

23. The pattern exposure apparatus as claimed in claim 20, wherein, The aforementioned adjustment mechanism includes a third telecentric adjustment mechanism that displaces the position of the aforementioned condenser lens system relative to the position of the aforementioned surface light source generated by the aforementioned surface light source member in an eccentric direction.

24. The pattern exposure apparatus as claimed in claim 18, wherein, The aforementioned illumination unit includes a mirror that serves as the aforementioned optical component to reflect the aforementioned illumination light at a predetermined angle. The aforementioned adjustment mechanism changes the angle of the aforementioned mirror to adjust the incident angle of the aforementioned illumination light that illuminates the aforementioned spatial light modulation element.

25. The pattern exposure apparatus of claim 20, wherein, When the reflective surface of the micromirror in the open state of the aforementioned spatial light modulation element is tilted at an angle θd (θd > 0°) relative to the plane perpendicular to the optical axis of the aforementioned projection unit, the aforementioned illumination unit is set to a tilted illumination mode in which the incident angle θα of the illumination light from the aforementioned condenser lens system toward the aforementioned spatial light modulation element is θα = 2·θd, and the incident angle θα is adjusted by the aforementioned adjustment mechanism.

26. The pattern exposure apparatus of claim 20, comprising a beam splitter disposed in the optical path between the spatial light modulation element and the projection unit, wherein when the reflective surface of the micromirror of the spatial light modulation element in the open state is designed to have an angle θd=0° relative to the plane perpendicular to the optical axis of the projection unit, the illumination unit is configured to be in the incident illumination mode in which the illumination light from the condenser lens system is incident on the spatial light modulation element at an incident angle θα=0° via the beam splitter, and the incident angle θα is adjusted by the adjustment mechanism.

27. A pattern exposure apparatus comprising: an illumination unit that illuminates a spatial light modulation element having a plurality of micromirrors, the plurality of micromirrors switching between an on state and an off state based on drawing data for pattern exposure; and a projection unit that directs reflected light from the on-state micromirrors of the spatial light modulation element as an imaging beam to project a pattern image corresponding to the drawing data onto a substrate, wherein... The aforementioned pattern exposure apparatus includes: a measurement unit for measuring the degree of asymmetry of the pattern image caused by the telecentric error of the imaging beam resulting from the distribution density of the micromirrors according to the on state of the spatial light modulation element; and an adjustment mechanism for adjusting the position or angle of at least one optical member in the illumination unit or the projection unit, or the angle between the optical axis of the illumination light incident on the spatial light modulation element and the normal to the surface on which the spatial light modulation element is disposed, when the pattern image is exposed onto the substrate by driving the spatial light modulation element based on the depiction data, so as to reduce the measured asymmetry.

28. The pattern exposure apparatus of claim 27, further comprising: a stage device that supports the substrate on the image plane side of the projection unit and is movable along the image plane; and a measuring unit disposed in a portion of the stage device that measures the intensity distribution of the pattern image to measure the degree of the asymmetry.

29. The pattern exposure apparatus as claimed in claim 28, wherein, The aforementioned adjustment mechanism adjusts the position or angle of at least one optical component within the aforementioned lighting unit to change the incident angle of the illumination light illuminating the aforementioned spatial light modulation element.

30. The pattern exposure apparatus as claimed in claim 29, wherein, The aforementioned lighting unit includes: a surface light source component that allows a light beam from a light source device to be incident on it to generate the aforementioned illumination light; and a condenser lens system that allows the illumination light from the aforementioned surface light source to be incident on the reflective surface of the aforementioned spatial light modulation element for Kohler illumination; and an adjustment mechanism that adjusts the relative positional relationship between the aforementioned surface light source and the aforementioned condenser lens system with respect to the eccentric direction.

31. The pattern exposure apparatus as claimed in claim 30, wherein, The aforementioned surface light source component has a compound eye lens forming the aforementioned surface light source and an aperture stop disposed on the exit surface side of the aforementioned compound eye lens, which is a large number of lens elements arranged in two dimensions. The aforementioned adjustment mechanism adjusts the relative positional relationship between the opening of the aforementioned aperture stop and the aforementioned condenser lens system with respect to the eccentric direction.

32. The pattern exposure apparatus as claimed in claim 30, wherein, The aforementioned surface light source component has a compound eye lens forming the aforementioned surface light source on the exit surface side of a large number of lens elements arranged in two dimensions, and the aforementioned adjustment mechanism adjusts the incident angle of the aforementioned light beam from the aforementioned light source device toward the aforementioned compound eye lens.

33. The pattern exposure apparatus as claimed in claim 28, wherein, The projection unit is composed of a plurality of lenses and projects a reduced image of the pattern generated by the micromirror in the open state of the spatial light modulation element onto the substrate of the reduction projection optical system. When the angle of the spatial light modulation element is adjusted by the adjustment mechanism, the position of a portion of the lenses of the reduction projection optical system is adjusted in the eccentric direction to correct the tilt of the image plane of the reduction projection optical system.

34. The pattern exposure apparatus of any one of claims 28 to 33, wherein, The above-described data includes data on the test pattern arranged by the distribution density of the micromirrors in the open state to generate telecentric error in the imaging beam. The measurement unit measures the asymmetry of the projected image of the test pattern generated by the spatial light modulation element via the projection unit.

35. The pattern exposure apparatus of any one of claims 27 to 33, wherein, The reflective surface of the micromirror in the open state of the aforementioned spatial light modulation element is set to be tilted at an angle θd (θd > 0°) relative to the plane perpendicular to the optical axis of the aforementioned projection unit. The incident angle θα of the illumination light from the aforementioned illumination unit toward the aforementioned spatial light modulation element is set to be a tilted illumination mode with θα = 2·θd. The aforementioned adjustment mechanism adjusts the incident angle θα.

36. The pattern exposure apparatus of any one of claims 27 to 33, further comprising: a beam splitter disposed between the spatial light modulation element and the projection unit, wherein the reflective surface of the micromirror of the spatial light modulation element in its open state is designed to have an angle θd = 0° relative to the surface perpendicular to the optical axis of the projection unit, wherein the incident angle θα of the illumination light irradiated to the spatial light modulation element via the beam splitter is set to be an incident illumination mode designed to have θα = 0°, and the adjustment mechanism adjusts the incident angle θα.

37. A method for manufacturing a component, comprising illuminating a spatial light modulation element having a plurality of micromirrors that switch between an on and off state based on drawing data with illumination light from an illumination unit, and projecting an image of a component pattern corresponding to the drawing data onto a substrate by means of a projection unit through which reflected light from the micromirrors in the on state of the spatial light modulation element is incident as an imaging beam, thereby forming a component pattern on the substrate, wherein... The above-mentioned component manufacturing method includes the following stages: a determination stage for determining the telecentric error of the imaging beam caused by the distribution of micromirrors in the open state of the spatial light modulation element, or the light intensity variation error of the imaging beam caused by the driving error of the micromirrors in the open state; and an adjustment stage for reducing the determined telecentric error or the determined light intensity variation error when the spatial light modulation element is driven based on the above-described drawing data to expose the image of the component pattern onto the substrate, by adjusting the position or angle of at least one optical component in the illumination unit or the projection unit, or the position of the spatial light modulation element, or the angle between the optical axis of the illumination light incident on the spatial light modulation element and the normal to the surface on which the spatial light modulation element is disposed.

38. The component manufacturing method as described in claim 37, wherein, The aforementioned determination stage is based on the distribution state of diffraction light generated according to the distribution state of one or more isolated patterns arranged independently or in rows of the micromirrors in the aforementioned open state, the line and gap patterns arranged by the micromirrors in the aforementioned open state with the isolated patterns arranged in a fixed periodic manner, or the island patterns of the micromirrors in the aforementioned open state arranged in a close manner with the size being several times larger than the isolated patterns, to determine the aforementioned telecentric error or the aforementioned light quantity variation error of the aforementioned imaging beam.

39. The component manufacturing method as described in claim 38, wherein, The reflective surface of the micromirror in the open state of the aforementioned spatial light modulation element is set to be tilted at an angle θd (θd≧0°) relative to the plane perpendicular to the optical axis of the aforementioned projection unit. The incident angle θα of the illumination light from the aforementioned illumination unit toward the aforementioned spatial light modulation element is set to be θα=2·θd.

40. The component manufacturing method as described in claim 39, wherein, When the spacing between the micromirrors is Pdx, n is a real number, the wavelength of the illumination light is λ, and the angle of each order j (j=0, 1, 2, ...) of the diffracted light is θj, the telecentric error of the imaging beam is defined by the angle of the jth diffracted light with the smallest inclination, which is calculated from the optical axis of the projection unit, in the complex diffracted light defined by sinθj=j·(λ / (n·Pdx))-sinθα.

41. The component manufacturing method as described in claim 40, wherein, The aforementioned adjustment stage involves adjusting the position or angle of the optical components within the illumination unit, or the angle of the spatial light modulation element, to adjust the incident angle θα of the illumination light, so that the tilt angle of the j-th diffracted light, measured from the optical axis of the projection unit, is within a predetermined allowable range.

42. The component manufacturing method as described in claim 40, wherein, In the aforementioned determination stage, when the angular error of ±△θd relative to the aforementioned tilt angle θd is the aforementioned driving error of the micromirror in the aforementioned open state, the aforementioned light intensity variation error of the aforementioned imaging beam is determined based on the degree to which the point image intensity distribution of the reflected light from the aforementioned open state micromirror unit in the exit pupil of the aforementioned projection unit is eccentric in accordance with the aforementioned angular error ±△θd.

43. The component manufacturing method as described in claim 42, wherein, During the aforementioned adjustment phase, the intensity of the light beam from the light source device that serves as the source of the illumination light is adjusted based on the determined light quantity variation error, or the transmittance of the illumination light is adjusted by the illuminance adjustment filter installed in the illumination unit.

44. A method for manufacturing an electronic component, comprising: illuminating an illumination unit with light from an illumination unit onto a spatial light modulation element having a plurality of micromirrors that switch between an on and off state based on drawing data; projecting a pattern image of an electronic component corresponding to the drawing data onto a substrate by means of a projection unit through which reflected light from the micromirrors in the on state of the spatial light modulation element is incident as an imaging beam; thereby forming an electronic component on the substrate, wherein... The above-mentioned component manufacturing method includes the following stages: a determination stage for determining at least one of the following errors: telecentric error of the imaging beam caused by diffraction due to the distribution state of the micromirrors in the open state of the spatial light modulation element; asymmetry error of the pattern image caused by the telecentric error; light quantity variation error of the imaging beam caused by the driving error of the micromirrors in the open state; or telecentric error of the imaging beam caused by the driving error; and an adjustment stage for reducing the at least one of the determined errors by adjusting the position or angle of at least one optical component in the illumination unit or the projection unit, or the position of the spatial light modulation element, or the angle between the optical axis of the illumination light incident on the spatial light modulation element and the normal to the surface on which the spatial light modulation element is disposed, when driving the spatial light modulation element to expose the pattern image onto the substrate.

45. The component manufacturing method as described in claim 44, wherein, The aforementioned determination stage is based on the distribution state of diffraction light generated according to the aforementioned distribution state of one or more isolated patterns arranged independently or in rows of the micromirrors in the aforementioned open state, the line and gap patterns arranged by the aforementioned isolated patterns in a fixed periodic manner of the micromirrors in the aforementioned open state, or the island patterns of the aforementioned micromirrors in the aforementioned open state arranged in a way that is several times larger than the aforementioned isolated patterns, to determine the aforementioned telecentric error, the aforementioned asymmetry error, or the aforementioned light quantity variation error.

46. ​​The component manufacturing method as described in claim 45, wherein, The reflective surface of the micromirror in the open state of the aforementioned spatial light modulation element is set to be tilted at an angle θd (θd≧0°) relative to the plane perpendicular to the optical axis of the aforementioned projection unit, and includes an angle error of ±△θd as the aforementioned driving error. The incident angle θα of the illumination light from the aforementioned illumination unit toward the aforementioned spatial light modulation element is set to be θα=2·θd in the design.

47. The component manufacturing method as described in claim 46, wherein, During the aforementioned determination phase, the telecentric error of the imaging beam when the micromirror in the aforementioned open state generates the aforementioned isolated pattern is determined as the aforementioned angular error ±△θd.

48. The component manufacturing method as described in claim 46, wherein, When the spacing between the micromirrors is Pdx, n is a real number, the wavelength of the illumination light is λ, and the angle of each order j (j=0, 1, 2, ...) of the diffraction light is θj, in the aforementioned determination stage, the telecentric error of the imaging beam when the micromirrors in the open state generate the aforementioned island pattern is defined by the angle of the jth order diffraction light with the smallest inclination, which is calculated from the optical axis of the aforementioned projection unit, in the complex diffraction light defined by sinθj=j·(λ / (n·Pdx))-sinθα.

49. A method for manufacturing a component as described in any of claims 46 to 48, wherein, During the aforementioned determination phase, the light intensity variation error of the imaging beam is determined based on the degree of eccentricity of the point image intensity distribution in the exit pupil of the projection unit corresponding to the aforementioned angle error ±△θd, which is derived from the reflected light from the micromirror unit in the aforementioned open state.

50. A method for manufacturing a component as described in any of claims 45 to 48, wherein, In the aforementioned determination stage, a test pattern belonging to any one of the aforementioned isolated pattern, the aforementioned line and gap pattern, or the aforementioned island pattern is generated using the aforementioned spatial light modulation element, and the aforementioned asymmetry error is determined based on the intensity distribution of the projected image of the aforementioned test pattern projected through the aforementioned projection unit.

51. A method for manufacturing a component as described in any of claims 45 to 48, wherein, During the aforementioned determination stage, while the aforementioned projection unit projects an imaging beam corresponding to any of the isolated pattern, the line and gap pattern, or the island pattern generated by the aforementioned spatial light modulation element, the aforementioned telecentric error is determined by measuring the offset of the intensity distribution of the imaging beam formed in the exit pupil of the aforementioned projection unit.

52. An exposure method comprising: an illumination unit that illuminates a spatial light modulation element having a plurality of micromirrors, the plurality of micromirrors being driven to switch between an on state and an off state based on drawing data; and a projection unit that directs reflected light from the on-state micromirrors of the spatial light modulation element as an imaging beam to project onto a substrate, wherein... The angle change of the imaging beam generated by the distribution of micromirrors based on the on state of the aforementioned spatial light modulation element is adjusted, and the light intensity change of the imaging beam generated by the aforementioned adjustment is adjusted.

53. The exposure method as described in request item 52, wherein, The aforementioned angle change is adjusted by adjusting the position or angle of the optical components in the aforementioned illumination unit or projection unit, or by adjusting the angle formed by the optical axis of the illumination light incident on the aforementioned spatial light modulation element and the normal to the surface on which the aforementioned spatial light modulation element is disposed.

Images