Micro bump and manufacturing method thereof, interposer for electric connecting, semiconductor package, multi-stage multilayer semiconductor device, and display

Abstract

The present invention provides a microbump that can correspond to narrow pitch between terminals and prevent the increase of current density and heat density at the bump connection, a method for manufacturing the same, an intermediary for electrical connection, a semiconductor package, a multi-segment stacked semiconductor element, and a display.

Description

Technical Field

[0001] This invention relates to a microbump, an intermediary for electrical connection therein, a semiconductor package, a multi-segment stacked semiconductor element, and a display. Prior Technology

[0002] The existing flip chip bonding method using solder bumps is widely used because it has the following advantages over wire bonding: it minimizes the length of the connection between the chip and the substrate while providing excellent electrical performance, increases the integration of input and output terminals, and disperses the heat release path, thereby releasing internal heat to the outside more quickly.

[0003] Recent semiconductor chips exhibit the following trends: a single chip performs multiple functions, processing speeds are gradually increasing, the number of input / output terminals is inevitably increasing, and the pitch is gradually decreasing.

[0004] Reducing the pitch between terminals naturally leads to a narrower pitch between solder bumps. However, with existing solder bump methods, the possibility of short circuits between adjacent solder bumps during melting increases. To address this, reducing the size of the solder bumps could be considered. However, reducing the size of the solder bumps would result in an excessively short distance between the chip and the substrate, increasing the difficulty of the underfill process. Furthermore, the reduced distance would lead to a significant increase in parasitic capacitance at high frequencies. Additionally, reducing the size of the solder bumps would increase the current density and heat density at the bump connections.

[0005] On the other hand, micro-light-emitting diode (LED) displays have recently emerged as another new generation of displays. While liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) use liquid crystals and organic materials as their core materials, micro-LED displays use LED chips with dimensions ranging from 1 micrometer (μm) to 100 micrometers (μm) as the light-emitting material. Because micro-LEDs have terminal sizes and pitches in the micrometer (μm) unit, the aforementioned problems still arise even when using existing solder bump methods to bond these micro-LEDs to the substrate (circuit board). [Existing Technical Documents] [Patent Literature]

[0006] [Patent Document 1] Korean Patent Registration No. 10-1610326 Summary of the Invention

[0007] [The problem that the invention aims to solve]

[0008] The present invention is proposed to solve the above-mentioned problems. The purpose of the present invention is to provide a microbump that can correspond to the narrow pitch between terminals and prevent the increase of current density and heat density in the bump connection, an intermediary for electrical connection including the microbump, a semiconductor package, a multi-segment stacked semiconductor element, and a display. [Methods for solving problems]

[0009] To achieve the above objectives, the method for manufacturing microbumps according to the present invention includes a conductive material portion forming step of forming a conductive material portion inside a through hole disposed in a body of an anodic oxide film material.

[0010] On the other hand, the medium for electrical connection according to the present invention includes: a body made of anodized film material and having a through hole; and micro bumps disposed inside the through hole, the micro bumps including conductive material portions.

[0011] In addition, the conductive material part includes at least one of the following materials: Cu, Al, W, Au, Ag, Mo, Ta, or alloys including the like.

[0012] On the other hand, the microbump according to the present invention includes a conductive material portion and a plurality of microgrooves disposed on the side of the conductive material portion.

[0013] In addition, the micro-grooves are disposed along the periphery of the side of the conductive material portion.

[0014] On the other hand, the semiconductor package according to the present invention includes: an element; a substrate for mounting the element; and a microbump disposed between the element and the substrate, the microbump being formed in a columnar shape and having microgrooves formed in a peripheral direction disposed on at least a portion of the side surface of the microbump.

[0015] On the other hand, the semiconductor package according to the present invention includes: an element; a substrate for mounting the element; and a microbump disposed on the lower part of the substrate, the microbump being formed in a column shape, and at least a portion of the side surface of the microbump being provided with microgrooves formed in the peripheral direction.

[0016] On the other hand, the multi-segment stacked semiconductor device according to the present invention includes: a plurality of elements; and microbumps disposed between the elements, the microbumps being formed in a columnar shape, and at least a portion of the side surface of the microbumps being provided with microgrooves formed in the peripheral direction.

[0017] On the other hand, the display according to the present invention includes: an element; a substrate for mounting the element; and a microbump disposed between the element and the substrate, the microbump being formed in a columnar shape and having microgrooves formed in a peripheral direction disposed on at least a portion of the side surface of the microbump. [The effects of the invention]

[0018] The present invention provides a microbump that can correspond to narrow pitch between terminals and prevent the increase of current density and heat density at the bump connection, an intermediary for electrical connection including the microbump, a semiconductor package, a multi-segment stacked semiconductor element, and a display. Simple Explanation of the Diagram

[0019] Figure 1 is a perspective view of a microbump according to a preferred embodiment of the present invention. Figures 2(a) to 2(f) illustrate a method for manufacturing microbumps according to a preferred embodiment of the present invention. Figures 3(a) and 3(b) are diagrams illustrating a semiconductor package according to a preferred embodiment of the present invention. Figures 4 to 14 are diagrams illustrating a method for manufacturing a semiconductor package according to a preferred embodiment of the present invention. Figure 15 is a diagram showing the mounting of a semiconductor package to a circuit board according to a preferred embodiment of the present invention. Figure 16 is a diagram illustrating a multi-segment stacked semiconductor device according to a preferred embodiment of the present invention. Figures 17(a) to 23(b) are diagrams illustrating a method of manufacturing a display according to a preferred embodiment of the present invention. Implementation

[0020] The following content is merely illustrative of the principles of the invention. Therefore, even if not explicitly described or illustrated in this specification, those skilled in the art can implement the principles of the invention and invent various devices encompassed within the concept and scope of the invention. Furthermore, all terms and embodiments listed in this specification should be understood in principle as being for the purpose of clearly understanding the concept of the invention only, and are not limited to the embodiments and states specifically listed above.

[0021] The objectives, features, and advantages described herein will become even more apparent from the following detailed description in conjunction with the accompanying drawings, thus enabling those skilled in the art to readily implement the inventive concept.

[0022] The embodiments described in this specification will be explained with reference to cross-sectional and / or perspective views, which serve as ideal illustrative diagrams of the invention. To effectively illustrate the technical content, the thickness of the films and regions shown in these figures is exaggerated. The shapes of the illustrative diagrams may be distorted due to manufacturing techniques and / or tolerances. Furthermore, the number of micro-bumps shown in the figures is only illustratively shown in part. Therefore, embodiments of the invention are not limited to the specific shapes shown, but also include variations in shapes generated according to the manufacturing process. Technical terms used in this specification are for illustrative purposes only and are not intended to limit the invention. Unless the context clearly specifies otherwise, singular expressions include plural expressions. In this specification, it should be understood that terms such as "comprising" or "having" are intended to specify the presence of the features, numbers, steps, actions, constituent elements, components, or combinations thereof described in this specification, without precluding the presence or additional possibilities of one or more other features or numbers, steps, actions, constituent elements, components, or combinations thereof.

[0023] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of various embodiments, even if the embodiments differ, for convenience, the constituent elements performing the same function will be given the same names and the same reference numerals. Furthermore, for convenience, structures and operations already described in other embodiments will be omitted.

[0024] The element (10) described below may be a semiconductor element, memory chip, microprocessor chip, logic chip, light-emitting element, or a combination thereof, including chip terminals with micro-fine pitch. Component (10) is not particularly limited, and examples include: large-scale integration (LSI) circuits (such as application-specified integrated circuits (ASICs), field-programmable gate arrays (FPGAs), and application-specific standard products (ASSPs), microprocessors (such as central processing units (CPUs) and graphics processing units (GPUs), memory (Dynamic Random Access Memory (DRAM), Hybrid Memory Cube (HMC), Magnetic Random Access Memory (MRAM), Phase-Change Memory (PCM), Resistive Random Access Memory (ReRAM), Ferroelectric Random Access Memory (FeRAM), and Flash Memory (NAND flash memory). Flash memory, semiconductor light-emitting elements (including LEDs, mini LEDs, micro LEDs, etc.), power devices, analog integrated circuits (ICs) (such as DC-AC converters and insulated-gate bipolar transistors (IGBTs)), microelectromechanical systems (MEMS) (such as accelerometers, pressure sensors, vibration sensors, and Giro sensors), wireless devices (such as global positioning systems (GPS), frequency modulation (FM), near field communication (NFC), and radio frequency electromagnetism (RFE) devices.This includes RFEM (Radio Frequency Imaging), Microwave Monolithic Integrated Circuit (MMIC), Wireless Local Area Network (WLAN), stand-alone devices, back-side illuminated (BSI) sensors, complementary metal-oxide-semiconductor (CMOS) image sensors (CIS), camera modules, CMOS, manual controls, GAW filters, radio frequency (RF) filters, integrated passive devices (IPD), adaptive predictive encoding (APE), and baseband (BB).

[0025] In addition, the substrate (20) described below includes circuit boards, wiring boards, packaging boards, temporary boards, intermediate boards, etc., and also includes all boards that are electrically connected directly or indirectly to the components (10).

[0026] Hereinafter, the microbump (150) according to a preferred embodiment of the present invention will be described first. [Microbumps()]

[0150] [)]

[0027] Hereinafter, the microbump (150) according to a preferred embodiment of the present invention will be described with reference to FIG1 to FIG2(f).

[0028] FIG1 is a perspective view of a microbump (150) according to a preferred embodiment of the present invention, and FIG2(a) to FIG2(f) are diagrams illustrating a method for manufacturing a microbump (150) according to a preferred embodiment of the present invention.

[0029] Referring to FIG1, the microbump (150) according to a preferred embodiment of the present invention includes a conductive material portion (130).

[0030] The conductive material section (130) comprises at least one of the following materials: Cu, Al, W, Au, Ag, Mo, Ta, or alloys thereof. As an example, the conductive material section (130) may be copper (Cu) or an alloy material with copper (Cu) as the main component.

[0031] The microbump (150) may be cylindrical. However, the shape of the microbump (150) is not limited to this. The microbump (150) may include polygonal prisms and various other shapes.

[0032] The microbump (150) may include a bonding material portion (not shown) disposed on at least a portion of the upper and lower parts of the conductive material portion (130). Here, the bonding material portion comprises at least one of the following materials: Sn, AgSn, Au, PbSn, SnAgCu, SnAgBi, AuSn, In, InSn, or an alloy including Sn. The bonding material portion includes: a first bonding material portion disposed on the upper part of the conductive material portion (130); and a second bonding material portion disposed on the lower part of the conductive material portion (130).

[0033] Referring to Figures 2(a) to 2(f), a method for manufacturing a microbump (150) according to a preferred embodiment of the present invention will be described.

[0034] The method for manufacturing microbumps (150) includes a conductive material part forming step, wherein the conductive material part forming step is to form a conductive material part (130) inside a through hole (123) disposed in a body (110) of anodized film material.

[0035] First, referring to Figure 2(a), the step of preparing the body (110) of the anodic oxide film material with a seed layer (200) disposed on the lower part is performed.

[0036] A seed layer (200) is disposed on the lower part of the anodic oxide film material body (110). The body (110) is manufactured by removing the base metal after anodizing the base metal. The seed layer (200) is disposed on one side of the body (110) by a deposition method. The seed layer (200) is formed to improve the plating characteristics during electroplating.

[0037] The main body (110) of the anodic oxide film material is made by removing the base metal after anodizing the base metal. Anodized film refers to a film formed by anodizing a metal that serves as the base material, and pores (111) refer to the holes formed during the process of anodizing the metal to form the anodic oxide film. For example, if the base metal is aluminum (Al) or an aluminum alloy, anodizing the base material will form an aluminum oxide (Al₂O₃) anodic oxide film on the surface of the base material. However, the base metal is not limited to this, and includes Ta, Nb, Ti, Zr, Hf, Zn, W, Sb or alloys thereof. The anodic oxide film formed as described above is divided in the vertical direction into a barrier layer in which no pores (111) are formed inside, and a porous layer in which pores (111) are formed inside. In the base material on which the anodic oxide film with the barrier layer and the porous layer is formed on the surface, if the base material is removed, only the aluminum oxide (Al₂O₃) anodic oxide film is retained. The anodic oxide film can be formed by removing the barrier layer formed during anodizing and having pores (111) that are continuous in the upper and lower parts, or by retaining the barrier layer formed during anodizing and sealing one end of the pores (111) in the upper and lower parts.

[0038] The anodic oxide film has a coefficient of thermal expansion of 2 ppm / ℃ to 3 ppm / ℃. Therefore, when exposed to high-temperature environments, the thermal deformation caused by temperature is small. Thus, even in high-temperature environments, precise microbumps (150) can be fabricated without thermal deformation.

[0039] Next, referring to Figure 2(b), the step of forming a plurality of through holes (123) in the main body (110) is performed.

[0040] The body (110) has a through-hole (123) that is independent of the pores (111) and has a wider width than the pores (111). The through-hole (123) can be formed with a width ranging from several micrometers to hundreds of micrometers. The through-hole (123) can be configured by an etching process. Since multiple through-holes (123) can be formed at once in a single etching process using an etching solution (e.g., an alkaline solution) that undergoes a wet reaction with the anodic oxide film, this method is advantageous in terms of production speed and manufacturing cost compared to a technique that forms one through-hole at a time.

[0041] The through-hole (123) can be formed by forming a photoresist on one side of the body (110) and patterning it to form an opening area, and then allowing an etching solution to flow into the opening area. Therefore, the cross-sectional shape of the through-hole (123) is made by replicating the shape of the patterned opening area as is.

[0042] Since the through-hole (123) is formed by using an etching process that uses patterned photoresist as a mask, there is no limitation on the cross-sectional shape of the through-hole (123), and the inner wall of the through-hole (123) formed by reacting the anodic oxide film with the etching solution forms a vertical inner wall.

[0043] The cross-section of the through hole (123) can be formed as a circular cross-section.

[0044] Next, referring to Figure 2(c), a step is performed to form a conductive material portion (130) by electroplating using a seed layer (200). Herein, a conductive material portion (130) is formed inside the through hole (123) of the main body (110).

[0045] Next, referring to Figure 2(d), the seed layer (200) previously disposed on the lower part of the body (110) is removed. The seed layer (200) can be removed using an etchant. At this step, the structure of the anodized film body (110) including microbumps (150) can be the electrical connection medium (100) described below.

[0046] Next, referring to Figure 2(e), a support film (T) is attached to the upper or lower surface of the body (110), and the anodized film material of the body (110) is removed as shown in Figure 2(f), thereby maintaining the microbumps (150) attached to the support film (T). The microbumps (150) are attached to the support film (T) and spaced apart, so that they can be transferred for the next process.

[0047] The interior of the through-hole (123) with a vertical inner wall is filled with conductive material (130), thereby forming a columnar micro-bump (150). Since the columnar micro-bumps (150) from the lower surface to the upper surface of the body (110) have the same cross-sectional area, they are advantageous for smooth current flow compared to micro-bumps with inner walls that cannot be vertically shaped, such as spherical or conical. In the case of micro-bumps with inner walls that cannot be vertically shaped and whose cross-sectional area decreases from the lower surface to the upper surface or towards the center, thermal and electrical bottlenecks are formed. However, since the micro-bumps (150) according to the preferred embodiment of the present invention have the same cross-sectional area from the lower surface to the upper surface, they do not have thermal and electrical bottlenecks.

[0048] The microbump (150) can be formed in a cylindrical shape with a circular cross-section. In this way, since it has a larger volume than the existing ball-shaped solder bump, it has the effect of reducing current density and heat density.

[0049] In addition, according to a preferred embodiment of the present invention, since the conductive material portion (130) is formed by a plating process, the height of the microbump (150) can be limited to the height of the through hole (123), thereby reducing the height deviation of the multiple microbumps (150).

[0050] After the plating process is completed, pressure is applied to the metal layer after the plating process is completed by heating to a high temperature, thereby increasing the density of the conductive material portion (130). In the case where photoresist is used as the mold, since there is photoresist around the metal layer after the plating process is completed, the process of heating to a high temperature and applying pressure cannot be performed. In contrast, according to a preferred embodiment of the present invention, since an anodized film body (110) is arranged around the conductive material portion (130) after the plating process is completed, even if the temperature is raised to a high temperature, the deformation can be minimized due to the low coefficient of thermal expansion of the anodized film, and the density of the conductive material portion (130) can be increased. Therefore, a conductive material portion (130) with a higher density can be obtained compared with the technology of using photoresist as the mold.

[0051] The microbump (150) has a height of 70 μm to 200 μm. Additionally, the microbump (150) has a diameter of 10 μm to 200 μm. Of course, these values ​​are merely an example, and the microbump (150) can be formed with even smaller values.

[0052] The microbumps (150) have microgrooves (155) on their sides.

[0053] Microgrooves (155) are formed on the outer peripheral surface of the microbump (150). The microgrooves (155) are formed on the side of the microbump (150) in the form of a groove that extends long in the height direction of the microbump (150).

[0054] More specifically, multiple micro-grooves (155) are disposed on the side of the conductive material portion (130). The micro-grooves (155) are disposed along the periphery of the side of the conductive material portion.

[0055] Micro-grooves (155) are disposed on all sides of the conductive material portion (130).

[0056] The depth of the micro-groove (155) is in the range of 20 nm or more and 1 μm or less, and its width is also in the range of 20 nm or more and 1 μm or less. Here, since the micro-groove (155) originates from the pores (111) formed during the fabrication of the anodic oxide film material, the width and depth of the micro-groove (155) are values ​​below the diameter range of the pores (111) formed in the body (110). On the other hand, the micro-groove (155) can be at least partially formed during the formation of the through hole (123) in the body (110), and the micro-groove (155) has a depth in a range greater than the diameter range of the pores (111) formed when a portion of the pores (111) in the body (110) is broken apart by an etching solution and anodized.

[0057] The body (110) includes a large number of pores (111). At least a portion of the body (110) is etched to form through holes (123), and a conductive material portion (130) is formed inside the through holes (123). Thus, the micro bumps (150) have micro grooves (155) formed on the side that are in contact with the pores (111) of the body (110).

[0058] Since the microgrooves (155) described above exhibit a folded morphology of repeating hills and valleys with a depth of 20 nm to 1 μm in the circumferential direction, they have the effect of increasing the surface area of ​​the sides of the microbumps (150). In other words, even if the microbumps (150) of the preferred embodiment of the present invention have the same shape and size as conventional bumps, the surface area of ​​the sides of the microbumps (150) can be further increased by the configuration of the microgrooves (155). By configuring the microgrooves (155) formed on the sides of the microbumps (150), the surface area for current flow is increased due to the skin effect, and the density of current flowing along the microbumps (150) is increased, thereby improving the electrical properties of the microbumps (150). In addition, by configuring the microgrooves (155), the heat generated in the microbumps (150) can be released quickly, thereby suppressing the temperature rise of the microbumps (150). [Intermediates used for electrical connections]

[0100] [)] []

[0059] The following describes an intermediary (100) for electrical connection having microbumps (150).

[0060] Referring to FIG7 or FIG2(d), the intermediary (100) for electrical connection may include a body (110) of anodized film material and microbumps (150) disposed in a through hole (111) of the body (110). The microbumps (150) can be held fixed inside the through hole (111). The microbumps (150) include conductive material portions (130).

[0061] On the other hand, the intermediate (100) for electrical connection described below includes two configurations: a configuration in which a main body (110) and microbumps (150) are simultaneously configured, and a configuration in which the main body (110) with the anodized film material is removed and only the microbumps (150) are configured. In both configurations, the microbumps (150) function as electrical connection components.

[0062] On the other hand, as explained above, since the microbump (150) may be configured to include a bonding material portion (not shown) disposed on at least a portion of the upper and lower portions of the conductive material portion (130), the intermediary (100) for electrical connection may also be configured to include a bonding material portion (not shown). Semiconductor Packaging

[0400] [)] []

[0063] The following describes a semiconductor package (400) configured with microbumps (150).

[0064] A semiconductor package (400) according to a preferred embodiment of the present invention will be described with reference to Figures 3(a) and 3(b). Figures 3(a) and 3(b) are diagrams illustrating a semiconductor package according to a preferred embodiment of the present invention.

[0065] Referring to FIG3(a), a semiconductor package (400) according to a preferred embodiment of the present invention includes: an element (10); a substrate (20) for mounting the element (10); and an intermediary (100) for electrical connection disposed between the element (10) and the substrate (20). The intermediary (100) for electrical connection includes: a body (110) which is made of anodized film material and has a through hole (123); and a conductive material portion (130) disposed inside the through hole (123).

[0066] Referring to Figure 3(b), the body (110) of the anodic oxide film material can be removed, and a semiconductor package (400) is formed by only the construction of microbumps (150) to electrically connect the element (10) to the substrate (20).

[0067] The semiconductor package (400) includes: an element (10); a substrate (20) for mounting the element (10); and microbumps (150) disposed between the element (10) and the substrate (20). The microbumps (150) are formed in a columnar shape, and microgrooves (155) repeating in a circumferential direction are disposed on the outer peripheral surface of the microbumps (150).

[0068] In a semiconductor package (400) according to a preferred embodiment of the present invention, the terminals (11) of the element (10) and the terminals (21) of the substrate (20) are electrically connected by a conductive material portion (130). A first bonding material (not shown) may be disposed between the terminals (11) of the element (10) and the microbumps (150), and a second bonding material (not shown) may be disposed between the terminals (21) of the substrate (20) and the microbumps (150). The first bonding material and the second bonding material comprise at least one of the following materials: Sn, AgSn, Au, PbSn, SnAgCu, SnAgBi, AuSn, In, InSn, or an alloy including Sn. The bonding between the first bonding material, the second bonding material, and the terminals (11, 21) may be performed by a hot pressing process or a reflow process.

[0069] The substrate (20) may include a substrate base (23), and an upper surface wiring layer (22) and a lower surface wiring layer (24) formed on the upper and lower surfaces, respectively. The substrate base (23) of the substrate (20) may be formed of at least one substance selected from phenolic resin, epoxy resin, and polyimide. For example, the substrate base (23) may include at least one substance selected from: FR4, tetrafunctional epoxy, polyphenylene ether, epoxy / polyphenylene oxide, bismaleimide triazine (BT), thermount, cyanate ester, polyimide, and liquid crystalline polymer. External connection terminals (25) may be disposed at the lower part of the lower surface wiring layer (24).

[0070] Referring to Figures 4 to 14, a method for manufacturing a semiconductor package (400) according to a preferred embodiment of the present invention will be described.

[0071] A method for manufacturing a semiconductor package (400) formed by mounting an element (10) on a substrate (20) includes the following steps: disposing an intermediary (100) for electrical connection between the element (10) and the substrate (20), wherein the intermediary (100) for electrical connection has a conductive material portion (130) disposed inside the through hole (123) of a body (110) of an anodic oxide film material having a through hole (123).

[0072] First, refer to Figure 4 to prepare the main body (110) of the anodized film material.

[0073] The body (110) is fabricated by anodizing a base metal. The diameter of the pores (111) contained in the porous layer is formed to be from several nanometers to hundreds of nanometers. The body (100) fabricated by the anodizing process can be formed by having a barrier layer formed during anodizing and sealing one end of the pores (111) on at least one surface side, or removing the barrier layer formed during anodizing on at least one surface side to expose both ends of the pores (111). When the body (110) is fabricated to be the same size and shape as the wafer of the fabricated element (10), an intermediary (100) for electrical connection can be disposed between the element (10) and the substrate (20) to perform wafer-level packaging.

[0074] In addition, since the thickness of the main body (110) of the anodic oxide film material can be formed to more than 100 μm, the height (thickness) of the micro bumps (150) can be uniformly formed to more than 100 μm.

[0075] A seed layer (200) is disposed on the lower part of the main body (110). The seed layer (200) disposed on the lower part of the main body (110) is used in the plating process of the conductive material part (130).

[0076] Next, referring to Figure 5, a through hole (123) is formed in the main body (110) that is independent of the pore (111) and has a wider width than the pore (111).

[0077] The through-hole (123) can be formed with a width ranging from several micrometers to tens of micrometers. Multiple through-holes (123) can be formed in a single etching process. Furthermore, since the through-hole (123) is formed using an etching process, there are no restrictions on the shape of the through-hole (123), and the inner wall of the through-hole (123) formed by reacting the anodic oxide film with the etching solution forms a vertical inner wall. Since the through-hole (123) with a vertical inner wall is filled with conductive material to form microbumps (150), it is advantageous for smooth current flow compared to through conductors that cannot form a vertical shape. The through-hole (123) can be formed by forming a photoresist on the upper surface of the body (110) and patterning it to form an opening region, followed by the flow of etching solution through the opening region. Therefore, the cross-sectional shape of the through-hole (123) is made to correspond to the shape of the patterned opening region. The cross-sectional shape of the through-hole (123) can be made not only circular but also polygonal.

[0078] Referring next to FIG6, a conductive material portion (130) is formed inside the through hole (123), thereby forming a microbump (150). The configuration and manufacturing method of the microbump (150) and the configuration and manufacturing method of the intermediate (100) for electrical connection may be configured according to the embodiments described above.

[0079] The conductive material part (130) is formed of at least one material selected from Cu, Al, W, Au, Ag, Mo, and Ta.

[0080] Since the microbumps (150) are formed in a cylindrical shape, they have a larger volume compared to those formed in a spherical shape. Furthermore, since the conductive material portion (130) is configured in a cylindrical shape, it has the effect of reducing the current density and heat density concentrated in the microbumps (150).

[0081] The body (110) with the through hole (123) can serve as a mold for electroplating when fabricating the micro bumps (150). Since the micro bumps (150) are fabricated inside the through hole (123) by a plating process, the precision characteristics of the conductive material part (130) are improved. Therefore, micro bumps (150) with reduced current resistance and high reliability can be fabricated. In addition, since the micro bumps (150) are fabricated inside the through hole (123) by a plating process, the shape precision is improved and various cross-sectional shapes can be achieved. Furthermore, even when multiple micro bumps (150) are formed on the body (110), the height deviation between the micro bumps (150) can be minimized.

[0082] The anodic oxide film material body (110) includes a large number of pores (111). At least a portion of this body (110) is etched to form through holes (123), and a conductive material portion (130) is formed inside the through holes (123) by electroplating. Therefore, the micro bump (150) has micro-grooves (155) formed on the side surface that come into contact with the pores (111) of the body (110). By constructing such micro-grooves (155), the surface area of ​​the side surface of the micro bump (150) can be further increased.

[0083] Referring to FIG7, an intermediary (100) for electrical connection is configured, the intermediary (100) for electrical connection including a body (110) of anodized film material having a through hole (123) and micro bumps (150) disposed inside the through hole (123).

[0084] Next, the step of disposing the intermediary (100) for electrical connection between the component (10) and the substrate (20) is performed. This step can be achieved by: (i) first bonding the component (10) to the intermediary (100) for electrical connection, and then bonding it to the substrate (20) (Figures 8 and 9); or (ii) bonding the intermediary (100) for electrical connection to the substrate (20), and then bonding the component (10) to the intermediary (100) for electrical connection (Figures 10 and 11).

[0085] Referring first to Figure 8, components (10) are mounted on the upper surface of the electrical connection medium (100). Each terminal (11) of the component (10) engages with a corresponding microbump (150) of the electrical connection medium (100). Figure 8 shows two components (10) mounted on the upper surface of the electrical connection medium (100), but the number of components (10) is not limited thereto; the number of components (10) can be as many as possible for wafer-level packaging.

[0086] Referring next to FIG9, the intermediate (100) for electrical connection on which the component (10) is mounted can be transferred to the substrate (20) side and bonded to the upper surface of the substrate (20). Terminals (21) of the substrate (20) are pre-fabricated and equipped on the upper surface of the substrate (20) at positions corresponding to the microbumps (150) of the intermediate (100) for electrical connection. The terminals (21) of the substrate (20) are electrically connected to the microbumps (150) of the intermediate (100) for electrical connection.

[0087] On the other hand, as shown in Figures 10 and 11, an intermediary (100) for electrical connection can first be disposed on the upper surface of the substrate (20), and then the component (10) can be transferred and disposed on the upper surface of the intermediary (100) for electrical connection. The microbumps (150) are electrically connected to the terminals (21) of the substrate (20) and also electrically connected to the terminals (11) of the component (10). Thus, the semiconductor package (400) includes: a component (10), a substrate (20) for mounting the component (10), and an intermediary (100) for electrical connection disposed between the component (10) and the substrate (20).

[0088] As shown in Figure 12, the semiconductor package (400) is configured with a body (110) having an anodic oxide film material disposed thereon, or, unlike this, as shown in Figure 13, the semiconductor package (400) can be configured such that the body (110) can be removed and only the microbumps (150) are retained. The body (110) can be selectively removed by means of a solution that reacts selectively only with the anodic oxide film.

[0089] Next, referring to FIG14, a molding layer (300) is formed to seal the component (10). The molding layer (300) may comprise a polymer material. In some embodiments, the molding layer (300) may be a molding compound layer. The molding compound layer may comprise an epoxy resin in which fillers are dispersed. The fillers may include insulating fibers, insulating particles, other suitable elements, or combinations thereof. A portion of the molding layer (300) is then removed by chemical mechanical polishing (CMP), thereby exposing the upper surface of the component (10). The monomerized semiconductor package (400) is then cut along a pre-cut line.

[0090] As shown above, the semiconductor package (400) according to a preferred embodiment of the present invention uses microbumps (150) to electrically connect the element (10) to the substrate (20).

[0091] Compared to flip-chip technology that only utilizes solder bumps, the flip-chip process using microbumps (150) formed from conductive material portions (130) according to a preferred embodiment of the present invention has the advantages of reducing the distance between the component (10) and the substrate (20) and enabling finer connections. In addition, since the electrical and thermal conductivity of the conductive material portion (130) is superior to that of solder alloys, the electrical and thermal characteristics of the semiconductor package (400) using microbumps (150) formed from conductive material portions (130) can be improved.

[0092] To set the distance between the component (10) and the substrate (20) to a certain distance (70 μm or more), a photoresist pattern can be considered. When the photoresist pattern is used as a mold to form the height of the microbump (150) to be 70 μm or more using electroplating, the photoresist pattern should also be formed to be 70 μm or more. However, it is difficult to form the photoresist pattern to be 70 μm or more, and this would increase the process cost. Alternatively, the photoresist pattern could be formed as a multi-layered structure to increase the height, but in this case, a step difference would occur between the layers of the photoresist pattern.

[0093] In contrast, since the present invention uses an anodized film material body (100) instead of a photoresist pattern to fabricate microbumps (150), the height of the microbumps (110) can be formed to be 70 μm or more. This allows the distance between the element (10) and the substrate (20) to be set to a certain distance or more (70 μm or more), thereby improving the performance of the semiconductor package (400).

[0094] In addition, since a micro-groove (155) is formed on the outer peripheral surface of the micro-bump (150) in the form of a groove that is long and recessed in the height direction of the micro-bump (150), the high-frequency signal transmission of the semiconductor package (400) can be facilitated and the heat dissipation characteristics can be improved. [Semiconductor packaging()]

[0400] [) Installed onto the circuit board ()

[0600] The composition of [)]

[0095] The following describes the configuration and manufacturing method of mounting a semiconductor package (400) with microbumps (150) onto a circuit board (600).

[0096] Referring to FIG15, an electrical connection intermediary (100) according to a preferred embodiment of the present invention may be disposed on the lower part of the substrate (20). That is, the semiconductor package (400) according to a preferred embodiment of the present invention may include the following components: an element (10); a substrate (20) for mounting the element (10); and an electrical connection intermediary (100) disposed on the lower part of the substrate (20). The electrical connection intermediary (100) may be additionally disposed between the element (10) and the substrate (20).

[0097] An intermediary (100) for electrical connection is disposed between the substrate (20) and the circuit board (600), thereby enabling the semiconductor package (400) to be bonded to the circuit board (600).

[0098] The method of manufacturing this semiconductor package (400) includes the following steps: disposing an intermediary (100) for electrical connection on the lower part of a substrate (20), wherein the intermediary (100) for electrical connection has a conductive material portion (130) disposed inside the through hole (123) of a body (110) of anodized film material having a through hole (123).

[0099] Figure 15 shows the state in which the body (110) of the anodic oxide film material is removed, but the configuration of the body (110) of the anodic oxide film material arranged in Figure 15 is also included in an embodiment of the present invention.

[0100] That is, the semiconductor package (400) includes an element (10), a substrate (20) for mounting the element (10), and microbumps (150) disposed on the lower part of the substrate (20). The microbumps (150) are formed in a column shape, and microgrooves (1550) with repeated hills and valleys in the circumferential direction are disposed on the outer peripheral surface of the microbumps (150).

[0101] As described above, the semiconductor package (400) according to a preferred embodiment of the present invention is electrically connected to the circuit board (600) using microbumps (150). Multi-segment stacked semiconductor devices

[0500] [)]

[0102] The following describes a multi-segment stacked semiconductor device (500) configured with microbumps (150) and its manufacturing method.

[0103] Referring to FIG16, a multi-segment stacked semiconductor device (500) according to a preferred embodiment of the present invention may be constructed using microbumps (150), which are disposed between upper and lower adjacent elements (10) to electrically connect the upper and lower adjacent elements (10). That is, the multi-segment stacked semiconductor device (500) includes a plurality of elements (10) and an intermediary (100) disposed between the elements (10) for electrical connection. The intermediary (100) for electrical connection includes: a body (110) which is made of anodized film material and has a through hole (123); and microbumps (150) disposed inside the through hole (123). Alternatively, the intermediary (100) for electrical connection may be formed by removing the anodized film material body (110) and consisting only of microbumps (150).

[0104] The manufacturing method of this multi-segment stacked semiconductor device (500) includes the following steps: disposing an intermediary (100) for electrical connection between the devices (10), the intermediary (100) for electrical connection having microbumps (150) disposed inside the through-holes (123) of an anodic oxide film material body (110) having through-holes (123). After all the upper and lower adjacent devices (10) are joined by the microbumps (150), the method may further include the step of removing the anodic oxide film material body (110).

[0105] Figure 16 shows the state in which the body (110) of the anodic oxide film material is removed, but the configuration of the body (110) of the anodic oxide film material arranged in Figure 16 is also included in an embodiment of the present invention.

[0106] The multi-segment stacked semiconductor device (500) includes a plurality of elements (10) and microbumps (150) disposed between the elements (10). The microbumps (150) are formed in a columnar shape, and micro-grooves (1550) with repeating hills and valleys in the circumferential direction are disposed on the outer peripheral surface of the microbumps (150). Since the micro-grooves (155) described above have a folded shape with repeating hills and valleys in the circumferential direction and a depth of more than 20 nm and less than 1 μm, they have the effect of increasing the surface area of ​​the sides of the microbumps (150).

[0107] As described above, according to a preferred embodiment of the present invention, the multi-segment stacked semiconductor device (500) uses microbumps (150) to electrically connect adjacent upper and lower elements (10). [monitor]

[0108] The following describes a display equipped with microbumps (150) and its manufacturing method.

[0109] The display according to a preferred embodiment of the present invention includes: an element (10); a substrate (20) for mounting the element (10); and an intermediary (100) disposed between the element (10) and the substrate (20) for electrical connection.

[0110] The intermediary (100) for electrical connection includes: a body (110) made of anodized film material and having a through hole (123); and micro bumps (150) disposed inside the through hole (123). Alternatively, the intermediary (100) for electrical connection may be formed by removing the anodized film material body (110) and consisting only of the micro bumps (150).

[0111] Here, the component (10) is a semiconductor light-emitting element (LED), including mini LEDs and micro LEDs. In addition, the substrate (20) may be a circuit board with wiring.

[0112] According to a preferred embodiment of the present invention, the display can selectively remove the main body (110) of the above-described anodized film material.

[0113] The manufacturing method of the display according to a preferred embodiment of the present invention will be described below with reference to Figures 17(a) to 23(b).

[0114] A method for manufacturing a display according to a preferred embodiment of the present invention includes the following steps: disposing an intermediary (100) for electrical connection between an element (10) and a substrate (20), wherein the intermediary (100) for electrical connection has microbumps (150) disposed inside a through hole (123) of an anodized film material body (110) having a through hole (11); and joining a first bonding material portion (143) to a terminal (21) of the substrate (20) and joining a second bonding material portion (141) to a terminal (11) of the element (10).

[0115] First, referring to Figure 17(a), the element (10) is fabricated and positioned on the growth substrate (30). The growth substrate (30) may be formed of a conductive substrate or an insulating substrate. For example, the growth substrate (30) may be formed of at least any one of sapphire, SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga2O3.

[0116] The component (10) may include a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer may be formed using methods such as: metal-organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE). The first semiconductor layer may be formed, for example, a p-type semiconductor layer. The p-type semiconductor layer can be selected from semiconductor materials with the composition In xAl yGa 1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1), such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, etc., and can be doped with p-type dopants such as Mg, Zn, Ca, Sr, Ba, etc. The second semiconductor layer can be formed, for example, an n-type semiconductor layer. The n-type semiconductor layer can be selected from semiconductor materials with the composition In xAl yGa 1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1), such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, etc., and can be doped with n-type dopants such as Si, Ge, Sn, etc. The active layer, as a region for electron-hole recombination, allows electrons and holes to migrate to lower energy levels due to recombination, and can generate light with corresponding wavelengths. The active layer may be formed from a semiconductor material having, for example, the composition In xAl yGa 1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1), and may be formed as a single quantum well structure or a multi-quantum well (MQW) structure. Alternatively, it may include a quantum wire structure or a quantum dot structure.

[0117] The component (10) includes at least two terminals (21). The terminals (21) may be all disposed on one side of the component (10) or disposed on both sides. However, Figures 17(a)-17(c) show the case where all terminals (21) are disposed on one side of the component (10). The terminals (21) may include more than one layer and may be formed of a variety of conductive materials including metals, conductive oxides and conductive polymers.

[0118] The component (10) is sawed along the saw line using a laser or the like, or separated into individual components by an etching process.

[0119] On the other hand, the above description describes the case where the element (10) is fabricated in the growth substrate (30) and disposed on the growth substrate (30). However, the element (10) fabricated in the growth substrate (30) can be transferred from the growth substrate (30) to a temporary substrate or an intermediate substrate, etc. Therefore, the preferred embodiment of the present invention also includes the case where the growth substrate (30) shown in FIG17(a) is a temporary substrate or an intermediate substrate.

[0120] Next, referring to Figure 17(b), microbumps (150) are disposed on the upper part of the component (10). The microbumps (150) are positioned in a manner corresponding to each terminal (21) of the component (10). Specifically, a component (10) has two terminals (21) disposed on one side, and the microbumps (150) are also disposed in a manner corresponding to each terminal (21). The microbumps (150) can be positioned on the upper part of the component (10) by means of an electrical connection medium (100) including a body (110) of anodized film material, or by means of a separate picker to move the microbumps (150) to the upper part of the component (10).

[0121] Next, referring to Figure 17(c), the microbump (150) is electrically connected to the terminal (21) of the component (10). If the microbump (150) is transferred together with the anodic oxide film body (110), the anodic oxide film body (110) can be selectively removed using an etching solution.

[0122] Next, referring to Figure 18(a), the component (10) is inverted and moved to the substrate (20) side. A terminal (21) is arranged on the upper surface of the substrate (20) at a position corresponding to the position of the terminal (11) of the component (10). The positions of the terminals (11) of the component (10) and the positions of the terminals (21) of the substrate (20) are aligned with each other, and then the positions of the component (10) and the substrate (20) are moved relative to each other, so that they are close to each other.

[0123] Here, the substrate (20) as a display substrate may include a variety of materials. For example, the substrate (20) may be formed of a transparent glass material with SiO2 as the main component. However, the substrate (20) is not necessarily limited to this and may be formed of a transparent plastic material to be soluble. The plastic material may be an organic material selected from the group consisting of: polyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), triacetyl cellulose (TAC), and cellulose acetate propionate (CAP). In the case where the image is formed in the direction of the substrate (20) and is back-emitting, the substrate (20) should be made of a transparent material. However, in the case where the image is formed in the opposite direction of the display substrate (20) and is front-emitting, the substrate (20) does not necessarily need to be made of a transparent material. In this case, the substrate (20) can be formed of metal. When the substrate (20) is formed of metal, the substrate (20) may include one or more materials selected from the group consisting of iron, chromium, manganese, nickel, titanium, molybdenum, stainless steel (SUS), Invar alloy, Inconel alloy, and Kovar alloy, but is not limited thereto.

[0124] Next, referring to Figure 18(b), a process is performed to bond the component (10) to the substrate (20). Microbumps (150) electrically connect the component (10) to the substrate (20).

[0125] Next, referring to Figure 18(c), a process for separating the growth substrate (30) from the device (10) is performed. For example, a laser stripping process can be used to separate the growth substrate (30) from the device (10).

[0126] In Figures 17(a) to 18(c), the order in which the element (10) is first bonded to the medium (100) for electrical connection and then bonded to the substrate (20) is described. However, as shown in Figures 19(a) to 20(b), the display can be manufactured in the order in which the medium (100) for electrical connection is first bonded to the substrate (20) and then the element (10) is bonded.

[0127] First, referring to Figure 19(a), prepare a substrate (20) with terminals (21) arranged on its upper surface.

[0128] Referring next to Figure 19(b), an electrical connection medium (100) is aligned on the substrate (20) and microbumps (150) are joined to the terminals (21) of the substrate (20).

[0129] Next, referring to Figure 19(c), after placing the element (10) fabricated in the growth substrate (30) on the intermediate (100) for electrical connection, the terminals (11) of the element (10) are connected to the microbumps (150). Here, the element (10) may be in a state supported by the growth substrate (30), or it may be in a state where it is fabricated in the growth substrate (30) and then transferred to a temporary substrate or intermediate substrate and supported by the temporary substrate or intermediate substrate.

[0130] On the other hand, in the structure shown in FIG19(b), the first bonding material portion (meaning the symbol 141 shown in FIG21 and FIG22) may not be bonded to the terminal of the substrate (20), while in the structure shown in FIG19(c), the first bonding material portion (meaning the symbol 141 shown in FIG21 and FIG22) and the second bonding material portion (meaning the symbol 143 shown in FIG21 and FIG22) may be bonded to each terminal (11, 21) in one bonding process.

[0131] Next, referring to Figure 20(a), the growth substrate (30) is separated from the device (10). For example, the growth substrate (30) can be separated from the device (10) using a laser stripping process.

[0132] Next, as shown in Figure 20(b), the anodic oxide film material body (110) is selectively removed from the intermediate (100) used for electrical connection using an etching solution. In this way, the component (10) is electrically connected to the substrate (20) by the formation of microbumps (150).

[0133] The difference lies in the following: the embodiments according to Figures 17(a) to 20(b) are embodiments in which the microbumps (150) are transferred in the display manufacturing process in the state of the body (110) disposed on the anodized film material, in contrast, the embodiments according to Figures 21(a) to 22(c) are embodiments in which the microbumps (150) are transferred separately in the display manufacturing process without the body (110) of the anodized film material.

[0134] First, referring to Figure 21(a), an element (10) is fabricated and positioned on the growth substrate (30). However, it is not limited to the growth substrate (30), and the element (10) may be disposed on a temporary substrate, intermediate substrate or invertible pickup device in a step prior to transfer to the substrate (20).

[0135] Referring next to Figure 21(b), a first bonding material (141) is disposed on the upper part of the terminal (11) of the component (10). The first bonding material (141) comprises at least one of the following materials: Sn, AgSn, Au, PbSn, SnAgCu, SnAgBi, AuSn, In, InSn or an alloy including Sn.

[0136] Next, referring to Figure 21(c), a microbump (150) is disposed on the upper part of the first bonding material (141). The microbump (150) can be transferred to the upper part of the first bonding material (141) using a separate pick-up device. Alternatively, as shown in Figure 2(f), by transferring the microbump (150) together with the support film (T) to the upper part of the terminal (11) of the element (10) and removing the support film (T), the microbump (150) can be disposed on the upper part of the first bonding material (141).

[0137] Next, referring to Figure 22(a), the component (10) is inverted and moved to the substrate (20) side. A terminal (21) is arranged on the upper surface of the substrate (20) at a position corresponding to the position of the terminal (11) of the component (10). The positions of the terminals (11) of the component (10) and the positions of the terminals (21) of the substrate (20) are aligned with each other, and then the positions of the component (10) and the substrate (20) are moved relative to each other, so that they are close to each other.

[0138] A second bonding material (143) is disposed on the upper part of the terminal (21) of the substrate (20). The second bonding material (143) comprises at least one of the following materials: Sn, AgSn, Au, PbSn, SnAgCu, SnAgBi, AuSn, In, InSn or an alloy including Sn.

[0139] Next, referring to Figure 22(b), a process is performed to bond the component (10) to the substrate (20). Microbumps (150) electrically connect the component (10) to the substrate (20).

[0140] Next, referring to (c) of Figure 22, a process is performed to separate the growth substrate (30) from the element (10).

[0141] As described above, the display according to a preferred embodiment of the present invention uses microbumps (150) to electrically connect the element (10) to the substrate (20).

[0142] A display including an element (10) such as a mini LED or micro LED includes: an element (10) such as a mini LED or micro LED, a substrate (20) for mounting the element (10), and micro bumps (150) disposed between the element (10) and the substrate (20). The micro bumps (150) are formed in a columnar shape, and micro grooves (155) repeating in a circumferential direction are disposed on the outer peripheral surface of the micro bumps (150). Since the micro grooves (155) described above have a folded shape with a depth of 20 nm to 1 μm in the circumferential direction, they have the effect of increasing the surface area of ​​the micro bumps (150) from the sides. According to a preferred embodiment of the present invention, by adopting the configuration of micro bumps (150) with micro grooves (155) disposed on the outer surface, the phenomenon of current density and heat energy concentration in the micro bumps (150) can be mitigated.

[0143] The size (horizontal and vertical) of the element (10), such as mini LED or micro LED, is as small as a few micrometers to tens of micrometers. Therefore, the spacing between the terminals (11) disposed on the element (10) is also as narrow as a few micrometers to tens of micrometers. According to a preferred embodiment of the invention, the element (10) can be reliably bonded to the terminals of the substrate (20) even within the size range of such element (10).

[0144] As described above, although the invention has been described with reference to preferred embodiments, those skilled in the art can make various modifications or variations to the invention without departing from the spirit and scope of the invention as set forth in the following claims.

[0145] 10: Semiconductor components 11, 21: terminal 20:Substrate 22: Upper surface wiring layer 23: Substrate 24: Lower surface wiring layer 25: External connection terminal 30: Growth substrate 100: Intermediates used for electrical connections 110: Main Body 111: Stomata 123: Through hole 130: Conductive Materials Division 141: First bonding material part / First bonding material 143: Second bonding material section / Second bonding material 150: Microbumps 155: Micro-grooves 200: Seed layer 300: Molding layer 400: Semiconductor Packaging 500: Multi-segment stacked semiconductor device 600: Circuit board T: Support membrane

Claims

1. A microbump, made of an anodized film material and having through holes, comprising: A conductive material portion is formed within the through hole; And microgrooves formed on the side of the conductive material portion and in contact with the pores of the body, wherein the microgrooves are exposed to the outside when the body is removed.

2. The microbump as claimed in claim 1, wherein the microgrooves are configured in a plurality of manner, and the plurality of microgrooves are configured along the periphery of the side surface of the conductive material portion.

3. A method for manufacturing microbumps, comprising: A conductive material portion is formed within the through-hole of the anodic oxide film material body; And the body of the anodic oxide film material is removed, wherein in the step of forming the conductive material portion, micro-grooves are formed by contacting the pores of the body from the side of the conductive material portion, and in the step of removing the body, the micro-grooves are exposed to the outside.

4. The method as described in claim 3 further includes: The step of applying pressure to the conductive material portion after it has been formed.

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