Control parameter setting method, substrate processing device, and memory medium

Abstract

[Problem] To reduce the difference in film thickness formed on a substrate in different modules. [Solution] A method for setting control parameters includes: acquiring a first parameter group as a control parameter group and a second parameter group as a control parameter group, the first parameter group including a plurality of control parameters for controlling film formation processing in a first film formation module, and the second parameter group for controlling film formation processing in a second film formation module; acquiring the film thickness value of a substrate-related processed film after film formation by the first film formation module according to the first parameter group, and the film thickness value of a substrate-related processed film after film formation by the second film formation module according to the second parameter group; and updating the first parameter group and the second parameter group to reduce the difference between the film thickness value of the substrate acquired in the first film formation module and the film thickness value of the substrate acquired in the second film formation module.

Description

Control parameter setting method, substrate processing device, and memory medium This disclosure relates to a method for setting control parameters, a substrate processing apparatus, and a memory medium. Patent Document 1 discloses a method for determining correction amounts related to pattern formation in a main pattern forming apparatus based on measurement data such as the resist film thickness in the main pattern forming apparatus, and also determining correction amounts in a pattern forming apparatus different from the main pattern forming apparatus. [Prior Art Documents] [Patent Documents] [Patent Document 1] Japanese Patent Application Publication No. 2003-158056 [The problem that the invention aims to solve] This disclosure provides a technique for reducing differences in film thickness formed on a substrate in different modules. [Means for Solving the Problem] This disclosure discloses a control parameter setting method for setting control parameters of a film deposition module included in a substrate processing apparatus. The method includes: acquiring a first parameter group and a second parameter group as control parameter sets; the first parameter group including multiple control parameters for controlling film deposition processing in a first film deposition module, and the second parameter group for controlling film deposition processing in a second film deposition module; acquiring the film thickness value of a substrate-related processed film after film deposition by the first film deposition module according to the first parameter group, and the film thickness value of a substrate-related processed film after film deposition by the second film deposition module according to the second parameter group; and updating the first and second parameter groups to reduce the difference between the film thickness value of the substrate acquired in the first film deposition module and the film thickness value of the substrate acquired in the second film deposition module. [Effects of the Invention] This disclosure provides a technique for reducing differences in film thickness formed on a substrate in different modules. [Simplified illustration] [Figure 1] is a schematic diagram showing an example of a substrate processing system. [Figure 2] is a schematic diagram showing an example of a coating and developing apparatus. [Figure 3] is a schematic diagram showing an example of a liquid processing unit. [Figure 4] is a schematic diagram showing an example of a measuring unit; [Figure 5] is a block diagram showing an example of the functional configuration of a control device. [Figures 6(a)] to [Figures 6(c)] are diagrams illustrating the concept of inter-module parameter correction performed by the control device. [Figure 7] is a block diagram showing an example of the hardware configuration of the control device. [Figure 8] is a flowchart showing an example of a control parameter setting method. [Figures 9(a)] and [Figure 9(b)] are diagrams illustrating an example of a method for calculating the correction value of the control parameter. [Figure 10] is a sequence diagram showing an example of a parameter sensitivity calculation method. [Figure 11] is a sequence diagram showing an example of a method for calculating the parameter correction value. [Figure 12] is a sequence diagram showing an example of a method for calculating the offset. [Figures 13(a)] and [Figure 13(b)] are sequence diagrams showing an example of a method for sharing parameter correction values. [Figure 14] is a diagram illustrating an example of a method for sharing parameter sensitivity information between coating and developing units. [Figure 15] is a flowchart illustrating an example of a method for adjusting the discharge pressure of the processing liquid according to the valve closing sequence. [Figure 16(a)] and [Figure 16(b)] are flowcharts illustrating an example of a method for adjusting the discharge pressure of the processing liquid according to the valve closing sequence. [Figure 17(a)] to [Figure 17(c)] are flowcharts illustrating an example of a method for adjusting the discharge pressure of the processing liquid according to the valve closing sequence. [Implementation Mode] The following describes various exemplary implementations. In one exemplary embodiment, the control parameter setting method is used to set control parameters of a film deposition module included in a substrate processing apparatus. The method includes: acquiring a first parameter group and a second parameter group as control parameter sets; the first parameter group includes multiple control parameters for controlling film deposition processing in a first film deposition module, and the second parameter group is used for controlling film deposition processing in a second film deposition module; acquiring, based on the first parameter group, the film thickness value of a substrate-related processed film after film deposition by the first film deposition module; acquiring, based on the second parameter group, the film thickness value of a substrate-related processed film after film deposition by the second film deposition module; and updating the first and second parameter groups to reduce the difference between the substrate film thickness value acquired in the first film deposition module and the substrate film thickness value acquired in the second film deposition module. According to the above control parameter setting method, the film thickness value of the substrate-related processed film after film formation by the first film formation module according to the first parameter group and the film thickness value of the substrate-related processed film after film formation by the second film formation module according to the second parameter group are obtained. Then, the first parameter group and the second parameter group are updated to reduce the difference between them. Therefore, the difference in film thickness formed on the substrate in different modules is reduced. Here, it can be the following state, further including: obtaining the film thickness value of the substrate-related processing film after the first film-forming module forms a film according to the updated first parameter group, and the film thickness value of the substrate-related processing film after the second film-forming module forms a film according to the updated second parameter group. As described above, by obtaining the film thickness value of the processed film on a substrate after film deposition using the updated first and second parameter groups, it is possible to verify whether the difference in film thickness values ​​has been reduced based on the updated first and second parameter groups. Therefore, if the difference in film thickness values ​​has not been reduced, countermeasures such as updating the first and second parameter groups again can be taken, thereby further reducing the difference in film thickness formed on the substrate in different modules. Alternatively, the aforementioned film-forming module may include: a holding and rotating section for holding and rotating the substrate; and a processing liquid supply section for supplying processing liquid to the aforementioned rotating substrate; wherein the aforementioned first parameter group and second parameter group include at least parameters for adjusting the discharge state from the aforementioned processing liquid supply section. When the film-forming module includes a processing fluid supply unit, the discharge state of the processing fluid from the supply unit may affect the film thickness. Therefore, by using a parameter for adjusting the discharge state of the processing fluid as a control parameter, adjustments can be made to reduce the difference in film thickness. Alternatively, it can be in the following form: the aforementioned processing fluid supply unit has a valve that controls the flow of processing fluid in the processing fluid flow path by means of opening and closing action, and the parameter for adjusting the aforementioned discharge state is the closing timing of the aforementioned valve. When the film-forming module includes a processing fluid supply unit, the flow of the processing fluid through the valve may affect the film thickness. Therefore, by using the valve closing timing as a parameter to adjust the discharge state of the processing fluid, the difference in film thickness can be reduced. Alternatively, the aforementioned processing fluid supply unit can change the discharge pressure of the aforementioned processing fluid, and when updating the closing sequence of the aforementioned valves included in the aforementioned first parameter group or second parameter group, the discharge pressure can be updated according to the changed closing sequence so that the supply amount of processing fluid from the aforementioned processing fluid supply unit becomes constant. Changing the valve closing sequence affects the supply of the processing fluid, but if the supply of the processing fluid is changed, the film thickness may change significantly from the predetermined value. Therefore, as described above, by updating the discharge pressure according to the changed closing sequence to keep the supply of processing fluid from the processing fluid supply unit constant, the film thickness variation caused by the change in the supply of processing fluid can be suppressed. It can also be in the following form: the aforementioned control parameter group includes the rotation number of the aforementioned holding rotating part when supplying the aforementioned processing liquid, or the rotation number of the aforementioned holding rotating part when drying the aforementioned supplied processing liquid. When the film-forming module includes a rotating holding section, the rotation number of the rotating holding section during the supply of the aforementioned processing liquid and the rotation number of the rotating holding section during the drying of the processing liquid will affect the film thickness value. Therefore, by using the rotation number of the rotating holding section during the supply of the processing liquid or the rotation number of the rotating holding section during drying as control parameters, adjustments can be made to reduce the difference in film thickness values. Alternatively, it can be in the following form: the aforementioned film thickness value is represented as a film thickness profile composed of multiple components related to the shape of the film thickness distribution, further including determining the sensitivity of the aforementioned multiple control parameters contained in the aforementioned first parameter group and the aforementioned second parameter group to the aforementioned film thickness value based on the relationship with each component contained in the aforementioned film thickness profile, and in updating the aforementioned first parameter group and the aforementioned second parameter group, the sensitivity of the aforementioned multiple control parameters to the aforementioned film thickness value is used to update each control parameter contained in the aforementioned first parameter group and the aforementioned second parameter group. By constructing the above-mentioned structure and representing the film thickness value as a film thickness profile composed of multiple components related to the shape of the film thickness distribution, it is possible to determine which elements related to the film thickness distribution are included in the film thickness value. Furthermore, by calculating the contribution of each control parameter in the parameter group to the variation of the film thickness value as the sensitivity of the film thickness value, the control parameters can be updated with higher precision, thereby reducing the difference in film thickness values. It can also be in the following form, further including: transmitting information related to the sensitivity of the aforementioned plurality of control parameters to the aforementioned film thickness value to a substrate processing apparatus different from the aforementioned substrate processing apparatus. With the above configuration, information related to the sensitivity of multiple control parameters to film thickness values ​​can be used in multiple substrate processing devices, thus improving convenience. It can also be in the following form, further including: obtaining the offset of the film thickness value when obtaining the film thickness value of the processed film in the aforementioned first film-forming module or the aforementioned second film-forming module. When measuring the thickness of a processed film formed on a substrate, offset components from the measuring device or the like may be present. Therefore, by employing a structure that acquires the offset, a measurement result of the film thickness that takes the offset into account can be obtained. Thus, using this information, finer adjustments can be made to reduce the difference in film thickness values, and more accurate film thickness adjustments can be performed. It can also be in the following form, further including: updating the aforementioned first parameter group and the aforementioned second parameter group for multiple types of film formation processes, and instructing and executing a film formation process that combines the updated control parameters related to the aforementioned multiple types of film formation processes obtained for the same film formation module. With the above configuration, when performing the same type of film deposition process in the same film deposition module, it is possible to use the updated control parameters without having to update them again. Therefore, the convenience of film deposition is improved. In one exemplary embodiment, a substrate processing apparatus includes: a control unit that controls a first film-forming module and a second film-forming module for performing film-forming processing on a substrate; the control unit includes: a parameter acquisition unit that acquires a first parameter group as a control parameter group and a second parameter group as a control parameter group, the first parameter group including a plurality of control parameters for controlling the film-forming processing in the first film-forming module, and the second parameter group for controlling the film-forming processing in the second film-forming module; a film thickness information acquisition unit that acquires the film thickness value of the substrate-related processed film after film-forming by the first film-forming module according to the first parameter group, and the film thickness value of the substrate-related processed film after film-forming by the second film-forming module according to the second parameter group; and a parameter update unit that updates the first parameter group and the second parameter group to reduce the difference between the film thickness value of the substrate acquired in the first film-forming module and the film thickness value of the substrate acquired in the second film-forming module. According to the aforementioned substrate processing apparatus, the film thickness value of the substrate-related processed film after being formed by the first film-forming module according to the first parameter group, and the film thickness value of the substrate-related processed film after being formed by the second film-forming module according to the second parameter group are obtained, and the first parameter group and the second parameter group are updated to reduce the difference between them. Therefore, the difference in film thickness formed on the substrate in different modules is reduced. Alternatively, the following configuration may be used: the aforementioned film thickness information acquisition unit acquires the film thickness value of the substrate-related processing film after the aforementioned first film deposition module has deposited the film according to the aforementioned updated first parameter group, and the film thickness value of the substrate-related processing film after the aforementioned second film deposition module has deposited the film according to the aforementioned updated second parameter group. As described above, by obtaining the film thickness value of the processed film on a substrate after film deposition using the updated first and second parameter groups, it is possible to verify whether the difference in film thickness values ​​has been reduced based on the updated first and second parameter groups. Therefore, if the difference in film thickness values ​​has not been reduced, countermeasures such as updating the first and second parameter groups again can be taken, thereby further reducing the difference in film thickness formed on the substrate in different modules. It can also be in the following form: the aforementioned film-forming module includes: a holding and rotating part that holds the substrate and rotates it; and a processing liquid supply part that supplies processing liquid to the aforementioned rotating substrate; the aforementioned first parameter group and second parameter group at least include parameters for adjusting the discharge state from the aforementioned processing liquid supply part. When the film-forming module includes a processing fluid supply unit, the discharge state of the processing fluid from the supply unit may affect the film thickness. Therefore, by using a parameter for adjusting the discharge state of the processing fluid as a control parameter, adjustments can be made to reduce the difference in film thickness. Alternatively, it can be in the following form: the aforementioned processing fluid supply unit has a valve that controls the flow of processing fluid in the processing fluid flow path by means of opening and closing action, and the parameter for adjusting the aforementioned discharge state is the closing sequence of the aforementioned valve. When the film-forming module includes a processing fluid supply unit, the flow of the processing fluid through the valve may affect the film thickness. Therefore, by using the valve closing timing as a parameter to adjust the discharge state of the processing fluid, the difference in film thickness can be reduced. Alternatively, the aforementioned processing fluid supply unit can change the discharge pressure of the aforementioned processing fluid, and when updating the closing sequence of the aforementioned valves included in the aforementioned first parameter group or second parameter group, the discharge pressure can be updated according to the changed closing sequence so that the supply amount of processing fluid from the aforementioned processing fluid supply unit becomes constant. Changing the valve closing sequence affects the supply of the processing fluid, but if the supply of the processing fluid is changed, the film thickness may change significantly from the predetermined value. Therefore, as described above, by updating the discharge pressure according to the changed closing sequence to keep the supply of processing fluid from the processing fluid supply unit constant, the film thickness variation caused by the change in the supply of processing fluid can be suppressed. It can also be in the following form: the aforementioned control parameter group includes the rotation number of the holding rotating part when supplying the aforementioned processing liquid, or the rotation number of the aforementioned holding rotating part when drying the aforementioned supplied processing liquid. When the film-forming module includes a rotating holding section, the rotation number of the holding section during the supply of the processing liquid and the rotation number of the holding section during the drying of the processing liquid will affect the film thickness. Therefore, by using the rotation number of the holding section during the supply of the processing liquid or the rotation number of the holding section during drying as control parameters, adjustments can be made to reduce the difference in film thickness. Alternatively, it can be in the following form: the aforementioned film thickness value is represented as a film thickness profile composed of multiple components related to the shape of the film thickness distribution, and the aforementioned control unit further includes: a parameter sensitivity calculation unit, which determines the sensitivity of the aforementioned multiple control parameters contained in the aforementioned first parameter group and the aforementioned second parameter group to the aforementioned film thickness value based on the relationship with each component contained in the aforementioned film thickness profile, and the aforementioned parameter update unit updates each control parameter contained in the aforementioned first parameter group and the aforementioned second parameter group using the sensitivity of the aforementioned multiple control parameters to the aforementioned film thickness value. By constructing the above-mentioned structure and representing the film thickness value as a film thickness profile composed of multiple components related to the shape of the film thickness distribution, it is possible to determine which elements related to the film thickness distribution are included in the film thickness value. Furthermore, by calculating the contribution of each control parameter in the parameter group to the variation of the film thickness value as the sensitivity of the film thickness value, the control parameters can be updated with higher precision, thereby reducing the difference in film thickness values. Alternatively, the control unit may further include an offset acquisition unit that acquires an offset of the film thickness value when acquiring the film thickness value of the processed film in the first film-forming module or the second film-forming module. When measuring the thickness of a processed film formed on a substrate, offset components from the measuring device or the like may be present. Therefore, by employing a structure that acquires the offset, a measurement result of the film thickness that takes the offset into account can be obtained. Thus, using this information, finer adjustments can be made to reduce the difference in film thickness values, and more accurate film thickness adjustments can be performed. It can also be in the following form: the aforementioned control unit further includes: an instruction unit, used to instruct the aforementioned first parameter group and the aforementioned second parameter group to be updated in the aforementioned parameter update unit for multiple types of film forming processes, and to instruct the execution of a film forming process that combines the updated control parameters related to the aforementioned multiple types of film forming processes obtained for the same film forming module. With the above configuration, when performing the same type of film deposition process in the same film deposition module, it is possible to use the updated control parameters without having to update them again. Therefore, the convenience of film deposition is improved. In one exemplary embodiment, a computer-readable memory medium is provided, which stores a program in a device for executing the control parameter setting method described above. The memory medium can achieve the same effect as the control parameter setting method described above. The following describes various exemplary embodiments in detail with reference to the drawings. Furthermore, the same symbols are used to mark the same or corresponding parts in each drawing. [Substrate Processing System] The substrate processing system 1 (substrate processing apparatus) shown in Figure 1 is a system for forming a photosensitive film on a workpiece W, exposing the photosensitive film, and developing the photosensitive film. The workpiece W to be processed is, for example, a substrate, or a substrate that has formed a film or circuit through a predetermined process. The substrate is, for example, a silicon wafer. The workpiece W (substrate) can be circular. The workpiece W can be a glass substrate, a photomask substrate, an FPD (flat panel display), etc. The photosensitive film is, for example, a resist film. As shown in Figures 1 and 2, the substrate processing system 1 includes a coating and developing apparatus 2, an exposure apparatus 3, and a control unit 100 (control section). The exposure apparatus 3 is an apparatus for exposing a resist film (photosensitive film) formed on a workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates the exposed portion of the resist film with an energy beam by methods such as immersion exposure. The coating and developing apparatus 2 is used to coat the surface of the workpiece W with a photoresist (solution) to form a photoresist film before the exposure treatment of the exposure apparatus 3, and to develop the photoresist film after the exposure treatment. The coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4 is used to guide workpieces W into the coating and developing apparatus 2 and to remove workpieces W from the coating and developing apparatus 2. For example, the carrier block 4 can support multiple carriers C for workpieces W and has a built-in conveying device A1 including a transfer arm. The carriers C, for example, hold multiple circular workpieces W. The conveying device A1 removes workpieces W from the carriers C and transfers them to the processing block 5, receives workpieces W from the processing block 5 and returns them to the carriers C. The processing block 5 has processing modules 11, 12, 13, and 14. The processing module 11 includes a liquid processing unit U1, a heat treatment unit U2, and a conveying device A3 for transferring the workpiece W to these units. The processing module 11 uses the liquid processing unit U1 and the heat treatment unit U2 to form a lower layer film on the surface of the workpiece W. Examples of the lower layer film include, for instance, a SOC (Spin On Carbon) film. The liquid processing unit U1 applies a processing liquid for lower layer film formation onto the workpiece W. The heat treatment unit U2 performs various heat treatments accompanying the formation of the lower layer film. The processing module 12 includes a liquid processing unit U1, a heat treatment unit U2, and a conveying device A3 for transferring the workpiece W to these units. The processing module 12 uses the liquid processing unit U1 and the heat treatment unit U2 to form a resist film on a lower film. The liquid processing unit U1 applies a processing liquid for resist film formation onto the lower film, and a film of this processing liquid is formed on the lower film (the surface of the workpiece W). The heat treatment unit U2 performs various heat treatments accompanying the formation of the resist film. The processing module 13 includes a liquid processing unit U1, a heat treatment unit U2, and a conveying device A3 for transferring the workpiece W to these units. The processing module 13 uses the liquid processing unit U1 and the heat treatment unit U2 to form an upper film on the resist film. The liquid processing unit U1 applies a processing liquid for upper film formation to the resist film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the upper film. Processing module 14 includes a liquid processing unit U1, a heat treatment unit U2, and a conveying device A3 for transferring workpiece W to these units. Processing module 14 uses the liquid processing unit U1 and the heat treatment unit U2 to perform development treatment and accompanying heat treatment on the exposed resist film. The liquid processing unit U1 applies a developer to the surface of the exposed workpiece W and then rinses the developer with a rinsing solution to develop the resist film. The heat treatment unit U2 performs various heat treatments accompanying the development process. Specific examples of heat treatment include pre-development heat treatment (PEB: Post Exposure Bake) and post-development heat treatment (PB: Post Bake). A shelf unit U10 is provided on the side of the carrier block 4 within the processing block 5. The shelf unit U10 is divided into multiple compartments arranged vertically. A conveying device A7, including a lifting arm, is provided near the shelf unit U10. The conveying device A7 lifts and lowers the workpiece W between the compartments of the shelf unit U10. A measuring unit U3, which functions as a measuring unit and will be described later, is provided within the shelf unit U10. The measuring unit U3 acquires information related to the film thickness (lower film, resist film, upper film, etc.) formed by the liquid processing unit U1 and the heat treatment unit U2. This will be explained later. A shelf unit U11 is provided on one side of the interface block 6 within the processing block 5. The shelf unit U11 is divided into multiple cells arranged in the vertical direction. Interface block 6 facilitates the transfer of workpiece W between itself and exposure device 3. For example, interface block 6 has a built-in transfer device A8 including a transfer arm and is connected to exposure device 3. Transfer device A8 transfers workpiece W placed on shelf unit U11 to exposure device 3. Transfer device A8 receives workpiece W from exposure device 3 and returns it to shelf unit U11. The control device 100 controls the coating and developing device 2 to perform the coating and developing process, for example, in the following order. First, the control device 100 controls the conveying device A1 to move the workpiece W in the carrier C to the shelf unit U10, and controls the conveying device A7 to place the workpiece W into the grid used by the processing module 11. Next, the control device 100 controls the conveying device A3 to convey the workpiece W on the shelf unit U10 to the liquid treatment unit U1 and the heat treatment unit U2 in the processing module 11. Furthermore, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form a lower film on the surface of the workpiece W. Afterwards, the control device 100 controls the conveying device A3 to return the workpiece W with the lower film formed to the shelf unit U10, and controls the conveying device A7 to place the workpiece W into a grid for the processing module 12. After the lower film is formed, the workpiece W can be conveyed to the measuring unit U3 of the shelf unit U10, and the film thickness of the lower film formed on the workpiece W can be evaluated. Next, the control device 100 controls the conveying device A3 to transport the workpiece W on the shelf unit U10 to the liquid treatment unit U1 and the heat treatment unit U2 within the processing module 12. Furthermore, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form a resist film on the lower layer of the workpiece W. Afterward, the control device 100 controls the conveying device A3 to return the workpiece W to the shelf unit U10, and controls the conveying device A7 to place the workpiece W into a grid for the processing module 13. After the resist film is formed, the workpiece W can be transported to the measuring unit U3 of the shelf unit U10, and the film thickness of the resist film formed on the workpiece W can be evaluated. Next, the control device 100 controls the conveying device A3 to convey the workpiece W on the shelf unit U10 to the respective units within the processing module 13. Furthermore, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form an upper film on the resist film of the workpiece W. Afterward, the control device 100 controls the conveying device A3 to convey the workpiece W to the shelf unit U11. After the upper film is formed, the workpiece W can be conveyed to the measuring unit U3 of the shelf unit U10, and the film thickness of the upper film formed on the workpiece W can be evaluated. Next, the control device 100 controls the conveying device A8 to move the workpiece W from the shelf unit U11 to the exposure device 3. After that, the control device 100 controls the conveying device A8 to receive the exposed workpiece W from the exposure device 3 and place it in the grid of the processing module 14 of the shelf unit U11. Next, the control device 100 controls the conveying device A3 to transport the workpiece W on the shelf unit U11 to each unit within the processing module 14, and controls the liquid treatment unit U1 and the heat treatment unit U2 to perform the development treatment of the resist film on the workpiece W. Afterwards, the control device 100 controls the conveying device A3 to return the workpiece W to the shelf unit U10, and controls the conveying devices A7 and A1 to return the workpiece W to the carrier C. This completes the coating and development treatment of one workpiece W. The control device 100 then controls the coating and development device 2 to perform the same coating and development treatment on each of the subsequent multiple workpieces W. Furthermore, the specific configuration of the substrate processing apparatus is not limited to the configuration of the substrate processing system 1 illustrated above. The substrate processing apparatus can be of any type, as long as it has a liquid processing unit that supplies processing liquid to the substrate for liquid processing and a control device that can control the liquid processing unit. (Liquid Processing Unit) Next, an example of the liquid processing unit U1 of the processing module 12 will be described with reference to FIG3. The liquid processing unit U1 (liquid processing section) supplies processing liquid to the surface Wa of the workpiece W, and then rotates the workpiece W with the processing liquid supplied to the surface Wa so that a film of processing liquid is formed on the surface Wa. FIG3 shows the state in which the processing film AF is formed on the workpiece W. As shown in FIG3, the liquid processing unit U1 has a rotation holding section 30 and a processing liquid supply section 40. A rotating holding part 30 holds and rotates the workpiece W. The rotating holding part 30 includes, for example, a holding part 32, a shaft 34, and a rotating drive part 36. The holding part 32 (support part) supports the workpiece W. The holding part 32, for example, supports the center portion of a horizontally arranged workpiece W with its surface Wa facing upwards, and holds the workpiece W by means of vacuum adsorption or the like. The upper surface of the holding part 32 (the surface supporting the workpiece W) can be formed into a circle when viewed from above, with a radius approximately 1 / 6 to 1 / 2 times the radius of the workpiece W. The rotating drive part 36 is connected to the lower part of the holding part 32 via the shaft 34. The rotary drive unit 36, for example, is an actuator containing a power source such as an electric motor, that causes the holding unit 32 to rotate about a vertical axis Ax. As the rotary drive unit 36 ​​rotates the holding unit 32, the workpiece W held (supported) on the holding unit 32 rotates. The holding unit 32 can hold the workpiece W such that the center of the workpiece W is substantially aligned with the axis Ax. The processing fluid supply unit 40 supplies processing fluid to the surface Wa of the workpiece W. The processing fluid is a solution (resist) used to form a resist film. The processing fluid supply unit 40 includes, for example, a nozzle 42, a supply source 44, a pump 45, an on / off valve 46, and a nozzle drive unit 48. The nozzle 42 ejects the processing fluid onto the surface Wa of the workpiece W, which is held by the holding unit 32. For example, the nozzle 42 is positioned above the workpiece W (vertically above the center of the workpiece W) and ejects the processing fluid downwards. The supply source 44 supplies processing fluid to the nozzle 42. The pump 45 can be provided between the supply source 44 and the nozzle 42 to adjust the supply amount of processing fluid. The processing fluid in the flow path is pressurized by the pump 45 and can be ejected from the nozzle 42. An on / off valve 46 is provided on the supply path between the nozzle 42 and the supply source 44. The on / off valve 46 switches the open / closed state of the supply path. The nozzle drive unit 48 moves the nozzle 42 between a discharge position above the workpiece W and a retracted position away from the discharge position. The discharge position is, for example, a position vertically above the rotation center of the workpiece W (position on axis Ax). The standby position is, for example, set to a position further outward than the periphery of the workpiece W. (Measuring Unit) Next, the measuring unit U3 will be described with reference to Figure 4. As described above, the measuring unit U3 acquires information on the film thickness of the film formed by the liquid processing unit U1 and the heat treatment unit U2. As shown in Figure 4, the measurement unit U3 functions as a measurement unit for performing measurements related to film thickness measurement. Specifically, the measurement unit U3 includes a spectroscopic measurement unit 60, a frame 70, a holding unit 71, and a linear drive unit 72. The holding unit 71 holds the workpiece W horizontally. Alternatively, the holding unit 71 can be configured such that the portion holding the workpiece W can rotate relative to the frame 70. In this case, the axis of rotation can be the center of the workpiece W held by the holding unit 71. In this situation, the workpiece W can rotate by rotating the top of the holding unit 71. The linear drive unit 72, for example using an electric motor or the like, moves the holding unit 71 along a horizontal straight path. The spectrometer 60 has the function of incidenting and splitting light from a workpiece W and obtaining a spectroscopic spectrum. The spectrometer 60 includes: an incident section 61 for incidenting light from the workpiece W; a waveguide section 62 for guiding the light incident on the incident section 61; a spectrometer 63 for separating the light guided by the waveguide section 62 to obtain a spectroscopic spectrum; and a light source 64. The incident section 61 is configured such that when the workpiece W held by the holding section 71 moves along with the drive of the linear drive section 72, light from the center of the workpiece W can be incident. That is, it is positioned at a location corresponding to the movement path of the center of the holding section 71, which moves along with the drive of the linear drive section 72. The incident section 61 is installed such that when the workpiece W moves by the movement of the holding section 71, the incident section 61 moves radially relative to the surface of the workpiece W. Therefore, the spectrometer 60 can obtain the spectroscopic spectrum at various positions along the radial direction of the workpiece W, including the center of the workpiece W. The waveguide section 62 is, for example, made of an optical fiber. Beam splitter 63 splits the incident light and acquires a spectroscopic spectrum containing intensity information corresponding to each wavelength. Light source 64 illuminates the light downwards. As a result, reflected light from workpiece W is incident on beam splitter 63 via incident section 61 and waveguide section 62. The wavelength range of the spectroscopic spectrum acquired by beam splitter 63 can be, for example, the visible light wavelength range (380 nm to 780 nm). Therefore, a light source emitting visible light is used as light source 64. By using beam splitter 63 to split the light reflected from light source 64 at the surface of workpiece W, spectroscopic spectral data (spectral data) within the visible light wavelength range can be obtained. The wavelength range of the spectroscopic spectrum acquired by beam splitter 63 is not limited to the visible light range; for example, it can include wavelength ranges including infrared or ultraviolet light. A suitable beam splitter 63 and light source 64 can be selected according to the wavelength range of the spectroscopic spectral data to be acquired. In the measurement unit U3, the linear drive unit 72 moves the holding unit 71. As a result, the workpiece W passes under the incident section 61. During this passage, reflected light from various parts of the workpiece W's surface is incident on the incident section 61 and then on the beam splitter 63 via the waveguide unit 62. The beam splitter 63 splits the incident light to obtain spectroscopic data. For example, when the film thickness formed on the surface of the workpiece W changes, the spectroscopic spectrum changes according to the film thickness. That is, acquiring the spectroscopic spectral data of the workpiece W's surface is equivalent to acquiring information related to the film thickness formed on the surface of the workpiece W. The measurement unit U3 can obtain information related to the film thickness of the workpiece W's surface by performing spectroscopic measurements. As described above, when the holding part 71 is moved by the linear drive unit 72, the spectroscopic spectrum at each position along the radial direction of the workpiece W, including the center of the workpiece W, can be obtained. The spectroscopic spectrum is acquired multiple times at predetermined intervals while the holding part 71 is moved. Therefore, for example, spectroscopic spectral data at multiple points along the radial direction of the workpiece W can be acquired. Here, by rotating the holding part 71, the workpiece W can be rotated in the moving direction of the holding part 71 using the linear drive unit 72. While the workpiece W is rotated, the spectroscopic spectrum at each position along the radial direction of the workpiece W, including the center of the workpiece W, is acquired again. By repeating this operation, the spectroscopic spectrum at each position with dispersion across the entire surface of the workpiece W can be obtained. That is, a wide range of spectroscopic spectra across the surface of the workpiece W can be acquired. Alternatively, instead of rotating the holding part 71, the spectroscopic spectrum at multiple points with dispersion across the entire surface of the workpiece W can be obtained by repeatedly rotating the workpiece W relative to the holding part 71. The spectroscopic data acquired by spectrometer 63 is sent to control device 100. Control device 100 can estimate the film thickness on the surface of workpiece W based on the spectroscopic data, and the estimation result is stored in control device 100 as an inspection result. As a method for estimating the film thickness on the surface of workpiece W based on spectroscopic data, a method that pre-creates a model for estimating the relationship between the film thickness on the surface of workpiece W and the spectroscopic data can be cited. In this case, the film thickness can be estimated by applying the above model to the spectroscopic data obtained from the workpiece W, which is the object whose film thickness is to be estimated. However, the method for estimating the film thickness on the surface of workpiece W is not limited to the above method. Furthermore, in the substrate processing system 1, the conditions related to the formation of the processed film AF can be adjusted based on the estimated film thickness. Specifically, in the control device 100 of the substrate processing system 1, the estimated film thickness is adjusted to match the target film thickness. The method for adjusting the processing conditions will be described in detail later. The spectrophotometer 60 can be installed independently as a measurement unit U3 as described above, or it can be installed in the liquid processing unit U1 or the heat treatment unit U2 described above. Furthermore, it can be configured such that by installing it in another unit, the film thickness of the workpiece W processed in any unit can be estimated by transporting the workpiece W processed in any unit. (Control Device) The control device 100 controls part or all of the coating and developing apparatus 2 to process the workpiece W. As shown in FIG5, the control device 100 includes, for example, a substrate processing control unit 101, a processing information memory unit 102, a film thickness calculation unit 103, an adjustment setting value acquisition unit 104 (parameter acquisition unit), a film thickness information acquisition unit 105, a parameter sensitivity calculation unit 106, a module correction value calculation unit 107 (parameter update unit), and a correction information memory unit 108, as a functional configuration (hereinafter referred to as a functional module). The processing performed by these functional modules is equivalent to the processing performed by the control device 100. Among them, the adjustment setting value acquisition unit 104, the film thickness information acquisition unit 105, the parameter sensitivity calculation unit 106, the module correction value calculation unit 107, and the correction information memory unit 108 have the function of an inter-module adjustment unit 110 for adjusting the film thickness between modules. When the coating and developing apparatus 2 processes workpiece W, the control device 100 has the function of adjusting the set values ​​for processing in each module to reduce the differences in film thickness distribution caused by processing in different modules. The aforementioned inter-module adjustment unit 110 is a functional module for reducing processing differences between these modules. The modules envisioned in the control device 100 correspond to units that perform specific treatments on the workpiece W, such as a liquid treatment unit U1 and a heat treatment unit U2. Figure 5 illustrates, as an example, the formation of a resist film as a treatment film on the workpiece W using three COT1-COT3 units corresponding to the three liquid treatment units U1 and three PAB1-PAB3 units corresponding to the three heat treatment units U2. All of these are contained within a single coating and developing apparatus 2, where the workpiece W is treated by one liquid treatment unit U1 (COT) and two heat treatment units U2 (PAB) to form a resist film on its surface. That is, in the example shown in Figure 5, the workpiece W is treated by any one of COT1-COT3 and any one of PAB1-PAB3. However, the combination of COT and PAB is not fixed. Therefore, for example, a workpiece W treated by COT1 may not necessarily be treated by PAB1. The workpiece W processed in each module forms a resist film in a state where it has already undergone processing in a COT or PAB. Therefore, the thickness distribution of the formed resist film may differ depending on the module in which the film is processed. Conversely, if a uniform thickness distribution is achieved regardless of the module, then to prevent the processing of workpiece W in each module from affecting the film thickness, measures can be taken to correct the parameters affecting the film thickness distribution in each module. To address the aforementioned issues, in the control device 100, the inter-module adjustment unit 110 evaluates the degree of influence of the parameters used in each module (processing unit) on the film thickness distribution. Furthermore, the control device 100 adjusts the parameters in each module to make the film thickness distribution more uniform. Next, the various parts of the control device 100 will be described. The substrate processing control unit 101 controls the liquid processing unit U1 and the heat treatment unit U2 (a module for film formation) to perform predetermined processing on the workpiece W. The substrate processing control unit 101 controls each part of the liquid processing unit U1 and the heat treatment unit U2 to perform liquid processing and heat treatment on the workpiece W according to various conditions specified in the processing information stored in the processing information memory unit 102. The processing information memory unit 102 stores processing information related to the liquid treatment and heat treatment of the workpiece W. Various conditions for performing liquid treatment and heat treatment are set in the processing information. For example, regarding liquid treatment, the timing of the start and stop of the discharge of the treatment liquid, and the rotational speed (number of revolutions) of the workpiece W when the treatment liquid is discharged are predetermined as setting values ​​for various conditions. Furthermore, as setting values ​​for various conditions, such as the rotational speed of the workpiece W when a treatment film is formed on the surface Wa after the treatment liquid is supplied, the rotational time of the workpiece W when the treatment film is formed, and the opening and closing time of the on / off valve 46, are also predetermined. The information processing memory unit 102 stores the "parameter sensitivity acquisition formula" and the "adjustment formula" used for parameter calibration between modules, as described later. These formulas summarize the processing conditions of each unit when forming a film on the workpiece W in the coating and developing apparatus 2. The "parameter sensitivity acquisition formula" is used in the inter-module adjustment unit 110, first using one module, to calculate the parameter sensitivity, which represents the degree of influence of a specific parameter on the film thickness. Furthermore, the "adjustment formula" is used after the parameter sensitivity has been calculated to determine the extent to which parameters should be adjusted for each module. The usage of these formulas will be explained later. The film thickness calculation unit 103 has the function of estimating the film thickness of the processed film based on the measurement results of the measurement unit. Specifically, after the spectroscopic spectral data obtained by the spectroscopic measurement unit 60 is sent to the control device 100, the film thickness calculation unit 103 estimates the film thickness based on a pre-created and maintained model that estimates the relationship between the film thickness of the film on the surface of the workpiece W and the spectroscopic spectral data. Therefore, the film thickness calculation unit 103 can estimate the film thickness of the processed film based on the spectroscopic spectral data. The calculation method of the film thickness calculation unit 103 is an example, and can be appropriately changed according to the configuration of the measuring unit. Next, the various parts of the inter-module adjustment unit 110 will be explained. First, the concept of inter-module correction will be explained with reference to FIG6. FIG6(a) schematically shows the film thickness distribution of the processing film AF formed by different modules. Here, as an example, the relationship between the film thickness distributions FD1~FD3 of the processing film AF of the workpiece W after processing by three different modules and the target film thickness FD0 is shown. At this time, the tendencies of the film thickness distributions FD1~FD3 are different from each other. Therefore, if the control parameters of each module are corrected by uniformly changing the film thickness (in the vertical direction) at each position, so that the average film thickness of each workpiece W becomes the target value FD0, the state in which the film thickness distributions are different from each other is maintained. That is, since the film thickness distribution (profile) of the processing film AF formed by each module does not have the same tendency, even if the difference in the average film thickness becomes small, the film thickness distribution is in a state that is very different for each workpiece W. Therefore, as shown in Figure 6(b), the inter-module adjustment unit 110 first suppresses the differences in film thickness distribution caused by the modules. That is, the control parameters are adjusted to make the film thickness distributions FD1 to FD3 have the same tendency. In this state, the control parameters are further adjusted so that the average value of the film thickness becomes the target value P0. By adopting such a method, as shown in Figure 6(c), the film thickness is adjusted so that the film thickness distributions FD1 to FD3 become the same and their average value becomes constant. In this way, in the inter-module adjustment unit 110, the relationship between the film thickness distribution and the control parameters is determined, and each control parameter is adjusted to suppress the deviation of the film thickness distribution between modules. The setting value acquisition unit 104 acquires the conditions related to the formation of the treatment film AF on the workpiece W, as instructed by the user. The film formation conditions are the same type of information stored in the processing information memory unit 102. Specifically, for example, regarding liquid processing, the timing of the start and stop of the discharge of the treatment liquid, the rotation speed of the workpiece W during discharge, etc., are predetermined. Furthermore, for example, the rotation speed of the workpiece W during the formation of the treatment film on the surface Wa after the treatment liquid is supplied, the rotation time of the workpiece W during film formation, the opening and closing time of the valve 46, etc., are also predetermined. This information, for example, is specified by the user, and assuming that a treatment film AF of predetermined thickness is formed on the surface of the workpiece W, these are the conditions when the workpiece W is processed in the liquid processing unit U1 and the heat treatment unit U2. The film thickness information acquisition unit 105 has the function of acquiring film thickness information related to the workpiece W after film deposition using the module, which is the module to which the calibration operation is performed between modules. The film thickness information acquisition unit 105 acquires the film thickness calculation results when the workpiece W is substrate-processed according to the "parameter sensitivity acquisition formula" and the "adjustment formula". The acquired film thickness calculation results are used by the parameter sensitivity calculation unit 106 and the module calibration value calculation unit 107, which will be described later. The parameter sensitivity calculation unit 106 calculates the parameter sensitivity, which represents the relationship between each control parameter and the film thickness distribution, in the module that performs substrate processing, based on the film thickness calculation result obtained by obtaining the result of substrate processing of workpiece W using the formula based on parameter sensitivity. As mentioned above, parameter sensitivity is information representing the relationship between various control parameters in the module performing substrate processing and the film thickness. Many control parameters affect the film thickness during module operation. If it is impossible to determine the extent to which each control parameter affects the film thickness distribution, it is difficult to control the film thickness distribution to a predetermined state by changing the control parameters. Therefore, by obtaining the aforementioned parameter sensitivity in advance, the degree to which the control parameters included in the processing unit affect the control of the film thickness distribution can be determined for each control parameter. To understand the relationship between control parameters and film thickness distribution, in one module of the liquid processing unit U1, experimental data is needed to determine how the film thickness changes when the liquid processing conditions, i.e., the control parameters, vary within an assumed range. Therefore, firstly, the experimental conditions required to calculate the sensitivity of each control parameter are determined. Specifically, known experimental design methods can be used to select appropriate experimental conditions and prepare an experimental condition table. Based on the type and numerical range of the control parameters, a formula for obtaining parameter sensitivity is created, containing multiple processing conditions with different settings for each parameter. Next, based on the prepared experimental condition table, the thickness of the treated film AF formed after treating the workpiece W under multiple processing conditions was measured (estimated). The method for calculating (estimating) the film thickness at this time was the same as the method described above, using an estimation method based on spectroscopic measurement results. As a result, information about the film thickness distribution of the treated film AF was obtained. Based on the experimental design table and the film thickness distribution measurement results (experimental results), the contribution of each parameter to the film thickness distribution of the treated film can be determined. The characteristic quantities representing the film thickness distribution can be obtained from the measurement results. As an example, the characteristic quantities representing the film thickness distribution can be approximated by Zernike polynomials, and coefficients related to each component can be used as characteristic quantities. Zernike polynomials are complex functions (actually used as real functions) on a unit circle with radius 1, and have variables (r, θ) in polar coordinates. In optics, Zernike polynomials are primarily used to analyze the aberration components of lenses. By using Zernike polynomials to decompose wavefront aberrations, the aberration components can be determined based on the shape of each individual wavefront, such as a mountain or saddle shape. In this embodiment, the in-plane distribution of the film thickness within the workpiece W surface is considered as an undulating wave surface. In this state, the film thickness distribution Z within the workpiece W surface can be decomposed into various types of in-plane inclination components Z in annular shapes using Zernike polynomials. i This includes curved components that are bent into convex or concave shapes. Each in-plane inclination component Z... i The magnitude of can be represented by the Zernike coefficient. Indicates the in-plane tendency component Z. i The Zernike coefficients can be specifically represented using polar coordinate variables (r, θ) by the following formula. Among these Zernike coefficients, coefficients Z1, Z4, and Z9, which are associated with concentric circular bending components, are used to represent the film thickness distribution on the surface of workpiece W. That is, Zernike polynomials of each coefficient Z1, Z4, and Z9 are used to approximate the variation in film thickness. In this case, the weighted coefficients of Z1, Z4, and Z9 can be used as characteristic quantities. From the above information, the relationship between the characteristic quantities obtained from the measurement results of the film thickness distribution, which is approximated by a Zernike polynomial, and the control parameters in the processing unit can be calculated. That is, for each control parameter, when the control parameter is changed by a specific amount, the extent to which the weighting coefficients in the Zernike polynomial change, and consequently, the extent to which the film thickness distribution changes, can be determined. This result can be called parameter sensitivity. The correspondence between the Zernike polynomial and the control parameters can be calculated using known methods. For example, the calculation can be performed by combining the result matrix obtained from film thickness estimation results based on multiple experimental results from an experimental table with a condition matrix made according to an experimental condition table. This calculation yields a matrix that determines the contribution of each control parameter to each Zernike coefficient. From this matrix, the degree of relationship between each control parameter and the film thickness distribution can be obtained. Since the relationship between each control parameter and the film thickness distribution varies depending on the processing conditions of the workpiece W, preparations can be made whenever conditions such as the type of workpiece W, the type of processing film AF coated onto the workpiece W, and the target film thickness of the processing film AF change. The above explanation has shown an example of calculating eigenvalues ​​by using Zernike polynomials for approximation, but approximation can also be performed using formulas other than Zernike polynomials. The module correction value calculation unit 107 has the function of correcting the control parameters in each module by using the relationship between the control parameters and the film thickness distribution calculated by the parameter sensitivity calculation unit 106, so that the same film thickness can be obtained even when processing in different modules, and the film thickness distribution is made the same. Through the above processing of the parameter sensitivity calculation unit 106, the relationship between each control parameter and the film thickness distribution in the module (processing unit) is grasped. On the other hand, by obtaining the film thickness distribution of the workpiece W after being processed by the module of the correction target, it is possible to grasp the degree of difference between the film thickness distribution of the processed film AF on the workpiece W obtained by the module of the correction target and the film thickness distribution of the processed film AF on the workpiece W made by other modules. Furthermore, based on the grasped difference, the correction amount of the control parameters used to make the film thickness distribution uniform can be calculated. Specifically, all film thickness distributions of the workpiece W after being processed in the same type of correction target module are obtained, and the difference between the film thickness distribution in each module and the specific film thickness distribution is determined under the premise of convergence to a specific film thickness distribution. Then, the adjustment amount of the control parameters is determined in a certain order to eliminate the difference. This will be explained later. The calibration information memory unit 108 has the function of storing the calibration values ​​of the control parameters of each module calculated by the module calibration value calculation unit 107. The stored calibration values ​​of the control parameters are used when the substrate processing control unit 101 instructs each module to perform film-forming related processes. The control device 100 described above comprises one or more control computers. For example, the control device 100 has the circuit 120 shown in FIG. 7. The circuit 120 has one or more processors 121, memory 122, storage 123, and input / output ports 124. The storage 123 has a computer-readable memory medium such as a hard disk. The memory medium stores programs for enabling the control device 100 to execute the substrate processing method and film thickness estimation method, which will be described later. The memory medium can be a non-volatile semiconductor memory, a magnetic disk, an optical disk, or other removable media. The memory 122 temporarily stores the program downloaded from the memory medium in the storage 123 and the calculation results of the processor 121. The processor 121, in conjunction with the memory 122, executes the above-mentioned program, thereby constituting the aforementioned functional modules. The input / output port 124, according to the instructions from the processor 121, performs electrical signal input / output with each part of the coating and developing apparatus 2. When the control device 100 is composed of multiple control computers, each functional module can be implemented by a separate control computer. The control device 100 can be composed of control computers including functional modules for performing liquid processing via the liquid processing unit U1 and the heat treatment unit U2, a functional module for estimating the thickness of the processed film AF (film thickness calculation unit 103), and a functional module for correcting control parameters (inter-module adjustment unit 110). Alternatively, each of these functional modules can be implemented by a combination of two or more control computers. In these cases, the multiple control computers, in a communicably connected state, collaboratively execute the substrate processing method and film thickness estimation method described later. The hardware configuration of the control device 100 is not necessarily limited to configuring each functional module by a program. For example, each functional module of the control device 100 can be composed of dedicated logic circuits or an ASIC (Application Specific Integrated Circuit) that integrates logic circuits. [Control Method of Substrate Processing Apparatus] Next, as an example of a substrate processing method, an example of the substrate processing-related actions performed by the control device 100, and an example of the processing (control parameter setting method) related to estimating the thickness of the processing film AF by correcting control parameters, will be described. In the control device 100, after calculating the parameter sensitivity using one module as described above, the parameter sensitivity is used to correct the control parameters of other modules. The processing described in this embodiment can also be applied to the correction of control parameters in two types of units, namely, a liquid treatment unit U1 and a heat treatment unit U2, which perform different treatments on a workpiece W. However, in the following description, for the sake of simplicity, the case of correcting control parameters in one type of module will be described, and the case of applying it to both types of modules will be described when necessary. Figure 8 is a flowchart illustrating an example of the above-described process performed by the control device 100. The control device 100 first executes step S01. In step S01, for example, the adjustment setting value acquisition unit 104 acquires adjustment setting values ​​related to the processing of the workpiece W. These adjustment setting values ​​are, for example, specified by the user of the coating and developing apparatus 2. Furthermore, the adjustment setting values ​​include the setting values ​​of each control parameter, which are the initial values ​​before correction. Next, the control device 100 executes step S02. In step S02, for example, the substrate processing control unit 101 controls the processing module to process the workpiece W according to the "parameter sensitivity acquisition formula". The module used at this time is predetermined (here, it is set as the first module). The control parameter settings are changed in one module and the processing related to the formation of the processed film is repeated. Then, the film thickness distribution of the formed processed film is measured. The film thickness calculation unit 103 calculates the film thickness based on the measurement results of the measurement unit (spectral measurement unit 60), and the film thickness information acquisition unit 105 obtains the result. In addition, in the parameter sensitivity calculation unit 106, the parameter sensitivity related to the relationship between the control parameters and the film thickness distribution is calculated based on the film thickness distribution. Next, the control device 100 executes step S03. In step S03, the substrate processing control unit 101, for example, controls the processing module to perform substrate processing on the workpiece W according to the "adjustment formula". At this time, in all modules that are the objects of calibration of control parameters, the processing related to the formation of the processed film is performed with the set value adjusted, that is, in the state set to the initial value of the control parameter. Then, the film thickness distribution of the formed processed film is measured. The film thickness calculation unit 103 calculates the film thickness distribution based on the measurement result of the spectrophotometer 60, and the film thickness information acquisition unit 105 obtains the result. When calibrating control parameters related to a type of module, the substrate is processed while the module is changed, all other conditions remaining the same. This allows data on the characteristic differences between modules reflected in the film thickness distribution to be obtained. Furthermore, when calibrating control parameters for two types of modules that are processed differently on a workpiece W, for example, the substrate is processed while the second type of module is changed, with the first type of module fixed. By processing in this way, data on the characteristic differences between modules reflected in the film thickness distribution can be obtained for the second type of module. Similarly, by processing the substrate while the first type of module is changed, with the second type of module fixed, data on the characteristic differences between modules reflected in the film thickness distribution can be obtained for the first type of module. Thus, the formulation composition can be changed by setting the module for which control parameters are calibrated. Next, the control device 100 executes step S04. In step S04, for example, the module correction value calculation unit 107 uses the film thickness distribution obtained in step S03, the initial value of the control parameters, and the pre-obtained parameter sensitivity to calculate a correction value (the optimal value of the control parameters) for reducing the difference in film thickness of the processed film formed in each module. The calculated correction value can be stored in the correction information memory unit 108. For example, the correction value used to correct deviations in film thickness distribution is treated as a quantization type I problem. A method is used to obtain a solution by solving this problem, and the correction value of the parameter is calculated using this method. This method will be described with reference to FIG9. In Figure 9(a), it is assumed that the liquid processing unit U1 (COT) has eight modules. Specifically, it is assumed that there are four modules COT11-1~4 and four modules COT12-1~4. Here, it is assumed that these eight modules are affected by two parameters. That is, since COT11-1~11-4 and COT12-1~12-4 are located in different layers (positions in the device), the operating recipes are different. It is further assumed that the eight modules are supplied with processing liquid by four pumps. Specifically, COT11-1 and 2 are operated by pump 11-12, COT11-3 and 4 are operated by pump 13-14, COT12-1 and 2 are operated by pump 12-12, and COT12-3 and 4 are operated by pump 12-34. At this time, for example, COT11-1 and 2 are controlled by the same control parameters, but by pumps different from COT11-3 and 4. Therefore, for example, to achieve a uniform film thickness distribution among COT11-1 to COT12, it is conceivable to adjust parameters related to pump operation. Furthermore, if a uniform film thickness distribution is used between the COT11 and COT12 groups, adjustments need to be made between the operating formulations for COT11 and COT12. Figure 9(b) describes this state as a quantized Type I problem. Here, it is assumed that the film thickness distribution FT in each module can be described by the sum of the total average of all modules plus the variation components [COT11-1~COT12-4] from each module and the error. The total average can be obtained by averaging the coefficients Z1, Z4, Z9, etc., of the film thickness distribution in each module using the Zernike polynomial approximation. Furthermore, the components from each module [COT11-1~COT12-4] can be decomposed into variable components from each layer [layer 11 component, layer 12 component], and variable components from the associated pump [Pump]. 111 Ingredients, Pump 113 Ingredients, Pump 121Ingredients, Pump 131 The sum of the components. Furthermore, as a specification for quantifying Type I problems, it is assumed that the sum of the variable components [COT11-1~COT12-4] from each module is zero. That is, the sum of the 11-layer or 12-layer components after decomposition is zero. Further, Pump... 111 Ingredients and Pump 113 The sum of the components is zero, Pump 121 Ingredients and Pump 123 The sum of the components is zero. Here, it is assumed that each component of the Zernike polynomial satisfies the above relation. By calculating each component separately [11-layer component, 12-layer component] and [Pump] 111 Ingredients, Pump 113 Ingredients, Pump 121 Ingredients, or Pump 131 By satisfying all the above relationships, the contribution of each component to the film thickness distribution in each module can be obtained. Furthermore, correction values ​​can be calculated by calculating the contribution of each component, for example, by calculating the inverse matrix. Therefore, the correction values ​​for the parameters can be calculated by setting the correction values ​​used to correct film thickness distribution deviations as a quantization type I problem and solving that problem. That is, by setting the calculation of correction values ​​related to film thickness distribution as a quantization type I problem, a solution can be obtained using known methods. Returning to Figure 8, the control device 100 executes step S05. In step S05, for example, the substrate processing control unit 101 controls the processing modules, performing processing in each module using control parameters modified with correction values. Then, the thickness of the processed film AF formed thereby is measured by the spectrophotometer 60 to obtain the film thickness value (film thickness distribution). The method for obtaining the film thickness distribution is the same as above. Next, the control device 100 executes step S06. In step S06, the module correction value calculation unit 107 refers to the film thickness distribution obtained in step S05 and confirms whether the film thickness distribution is within the target range. Here, it can be judged from the viewpoint of whether the deviation of the film thickness distribution between modules is within a predetermined range, or from the viewpoint of whether the dispersion of the film thickness distribution in a specific module is within a predetermined range. Furthermore, if it is predetermined that the film thickness of the processing film AF on the workpiece W is close to the target profile, it can be judged by using the dispersion of the difference between the film thickness distribution and the target surface inclination profile. As a result of this judgment, if the film thickness distribution is within the target range (S06 - Yes), the process ends. On the other hand, if the film thickness distribution does not fall within the target range (S06 - No), the correction value is calculated again using the film thickness distribution obtained in step S05 and the control parameters when the film thickness distribution was obtained (step S07), and steps S05, S06 (and step S07 if necessary) are repeated until the film thickness distribution falls within the target range. Next, referring to Figures 10 and 11, the exchange of instructions between the user, the control device 100, and the coating and developing apparatus 2 (particularly the processing module and the measuring unit) will be described. Figures 10 and 11 show the information exchanged between the user and the controller in order to execute each step of the flowchart shown in Figure 8. Figure 10 is a flowchart showing the processing sequence of the stages corresponding to steps S01 and S02 in Figure 8. First, the user instructs the control device 100 to acquire parameter sensitivity (step S11). In response, the control device 100 obtains an adjustment setting value by querying the user (step S12) (step S13). Based on the adjustment setting value, the control device 100 selects a recipe for acquiring parameter sensitivity corresponding to the adjustment setting value from the recipes stored in the processing information memory unit 102 (step S14). Since the required number of workpieces is determined based on the formula for obtaining parameter sensitivity, the control device 100 instructs the user to prepare the workpieces (step S15). After the workpieces are prepared, the user instructs to start the measurement (step S16). According to the user's instruction, the control device 100 instructs and controls the substrate processing based on the formula for obtaining parameter sensitivity, and the measurement of the film thickness distribution related to the workpiece W after substrate processing (step S17). Based on this, in the coating and developing apparatus 2, the workpiece W is processed in a designated module, and the film thickness after processing is measured by the measuring unit (spectral measurement unit 60 of the measuring unit U3) (step S18). The measurement result is sent from the spectroscopic measurement unit 60 of the coating and developing apparatus 2 to the control device 100 (step S19). In the control device 100, the film thickness distribution is calculated based on the measurement result, and the sensitivity of the control parameter (parameter sensitivity) is calculated based on the film thickness distribution (step S20). When a series of processes are completed, the control device 100 sends a completion report to notify the user that the processing is complete (step S21), so that the user can be assured that the processing related to obtaining parameter sensitivity has been completed. Alternatively, it can be configured to notify the recipient of information related to the calculated parameter sensitivity along with the completion report. Figure 11 is a diagram illustrating the processing sequence of the stages corresponding to steps S03 to S07 in Figure 8. First, the user instructs the control device 100 to perform inter-module adjustment (step S31). In response, the control device 100 prepares an adjustment formula for inter-module adjustment from the formula stored in the processing information memory unit 102 (step S32). Furthermore, the initial value of the adjustment setting is set during processing according to the adjustment formula (step S33). For this purpose, information acquired in the processing related to parameter sensitivity acquisition in FIG10 (step S13) can be used. Next, the control device 100 instructs and controls the measurement of the film thickness distribution of the substrate processing and the workpiece W after substrate processing based on the adjusted formula (step S34). Based on this, in the coating and developing apparatus 2, the workpiece W is processed in each module, and the film thickness after processing is measured by the spectrophotometer 60 (step S35). The measurement result is sent from the spectrophotometer 60 of the coating and developing apparatus 2 to the control device 100 (step S36), and the control device 100 calculates the film thickness distribution based on the measurement result. Here, it is determined whether the calculated film thickness distribution is within the target range (step S37). If it is not within the target range (S37-No), parameter optimization is performed (step S38), and the substrate processing in the coating and developing apparatus 2 is repeated (S34). On the other hand, if the calculated film thickness distribution is within the target range (S37-Yes), the control device 100 sends a completion report to notify the user that the processing is complete (step S39), and the user can know that the processing related to parameter sensitivity acquisition has ended. Alternatively, it can be configured to notify the sender of information related to the correction values ​​of the calculated parameters along with the completion report. [Modifications] In the above embodiment, the case where adjustments are made between modules to reduce the difference in film thickness distribution is described. Here, in addition to the series of processes described above, a modification that can be performed by the coating and developing apparatus 2 including the control device 100 will also be described. (Offset Calculation) As mentioned above, measurement by the measuring unit is essential when calculating film thickness. However, if the estimated film thickness obtained by the spectroscopic measuring unit 60, which functions as the measuring unit, does not correspond to the actual film thickness of the workpiece W, then using the estimated result to correct control parameters, etc., may also result in incorrect results. Therefore, when estimating film thickness using measurements based on the measuring unit, offset adjustment is required beforehand. Therefore, before using parameter sensitivity to correct the control parameters as described above, the measurement results obtained by the spectrophotometer 60 of the measurement unit U3 can be offset and adjusted. Figure 12 shows an example of the sequence for performing offset adjustments. The basic process is similar to the examples shown in Figures 10 and 11. First, as a preliminary preparation, the control device 100 prepares a workpiece W with a known film thickness, i.e., with acceptance data obtained (step S51). The film thickness of the workpiece W can be measured, for example, using other film thickness measuring devices. The user instructs the control device 100 to acquire the offset of the measuring unit (step S52). In response, the control device 100 prepares a formula corresponding to the offset adjustment from the formula stored in the processing information memory unit 102 (step S53). This formula is used to control the coating and developing apparatus 2 so that the workpiece W with a known film thickness is measured by the spectrophotometer 60 of the measuring unit U3. When the formula is ready, the control device 100 moves the workpiece W with a known film thickness to the measurement unit U3, instructs and controls the measurement of the film thickness distribution related to the workpiece W (step S54). Based on this, the film thickness of the workpiece W is measured in the designated spectrophotometer 60 in the coating and developing apparatus 2 (step S55). The measurement result is sent from the spectrophotometer 60 of the coating and developing apparatus 2 to the control device 100 (step S56), and the control device 100 calculates the film thickness distribution based on the measurement result. By comparing the calculated film thickness distribution with the acceptance data, the offset in the spectrophotometer 60 can be calculated (step S57). This offset is stored in the processing information memory unit 102 of the control device 100 (step S58), so that in the next measurement of the spectrophotometer 60, by using the offset for correction, the estimated film thickness can be calculated with higher accuracy. When the series of processes is completed, the control device 100 sends a completion report to notify the user that the processing is complete (step S59). Thus, if the offset is calculated before the control parameters are corrected by the control device 100, the offset calculation process performed when the coating and developing apparatus 2 is started can be performed more easily. (Parameter Management Using Correction Groups) Next, a method for using correction values ​​of control parameters in other manufacturing sequences (formulations) will be explained. In the above embodiment, a method for calculating correction values ​​of control parameters between modules when forming a processed film AF using specific adjustment settings has been described. Here, if there is a sequence for manufacturing other products using the same adjustment settings, it is possible to suppress film thickness distribution deviations in the product manufacturing sequence by applying the correction values ​​of control parameters calculated by the above method. Therefore, a method for sharing correction values ​​of control parameters between formulations will be explained. Figure 13(a) illustrates the situation where the parameters reflecting the correction values ​​are shared. Here, it is assumed that the optimal values ​​of the parameters used to reduce the film thickness distribution deviation between modules when manufacturing "film 1" are "para1" and "para2" obtained using the method described above. Similarly, it is assumed that the optimal values ​​of the parameters used to reduce the film thickness distribution deviation between modules when manufacturing "film 2" are "para3" and "para4" obtained using the method described above. On the other hand, it is assumed that the order of forming film 2 after forming film 1 is determined as the manufacturing order of a certain product. In this case, parameters for reducing the film thickness distribution deviation between modules have already been obtained for both film 1 and film 2. Therefore, it is speculated that by using these parameters "para 1~4", film 1 and film 2 can be formed while reducing the film thickness distribution deviation between modules. Therefore, it can be said that the optimal parameter values ​​for forming film 1 under certain conditions can also be used as the optimal parameter values ​​for other processing sequences besides forming film 1 under the same conditions. Therefore, as shown in Figure 13(b), the order in which membranes (e.g., membrane 1, membrane 2, etc.) are formed under specific conditions is considered as the same "group". For sequences belonging to the same group, the optimal values ​​of parameters used to form the predetermined membrane 1 can be applied. By adopting such a configuration, it is possible to prevent the recalculation of the correction values ​​(optimal values) of the control parameters each time the manufacturing sequence of the product is changed. As a method for determining which group a specific product's manufacturing sequence belongs to and associating it accordingly, labeling can be considered. For example, by affixing labels "Membrane 1" and "Membrane 2" to the "Product Manufacturing Sequence" shown in Figure 13(b), it can be determined that the "Product Manufacturing Sequence" uses "Membrane 1" and "Membrane 2". Furthermore, with these labels affixed, the control device 100 can automatically identify the optimal values ​​of the control parameters related to "Membrane 1" and "Membrane 2" when executing the product manufacturing sequence. This allows the control device to effectively utilize the optimal values ​​(correction values) of the control parameters calculated in one step by establishing a correlation between the manufacturing sequence of a product and separately calculated optimal values ​​(correction values). (Information exchange between coating and developing apparatuses) In the above embodiment, a method for reducing the difference in film thickness distribution between modules in a coating and developing apparatus 2 was described. However, it can be considered that among the various information used in the order described above, information related to parameter sensitivity can be shared with other coating and developing apparatuses 2. Methods to reduce film thickness distribution differences between modules require calibration considering the characteristics of each module. Therefore, substrate processing and film thickness measurement need to be actually performed using an adjustment formula for each module. On the other hand, it can be assumed that the sensitivity of various parameters related to the operation of the same module is the same between modules performing the same processing (e.g., coating of the same processed film), regardless of the device or module. Therefore, information on adjustment settings and the parameter sensitivity of these adjustment settings in the processing module can be shared between the coating and developing apparatus 2. Various types of information can be used to exchange data between the coating and developing apparatuses 2. Figure 14 illustrates, as an example, the configuration of sending and receiving information via the server SV. That is, information related to parameter sensitivity obtained in one coating and developing apparatus 2, as well as the adjustment setting value used when measuring the parameter sensitivity, are sent to the server SV and stored in the server SV. At this time, another coating and developing apparatus 2 can retrieve the corresponding parameter sensitivity-related information from the server SV, for example, based on the adjustment setting value. The server SV can be set up in a location that is always connected to multiple coating and developing apparatuses 2, such as in a cloud or other location that can connect to multiple coating and developing apparatuses 2. In this way, by sharing information about parameter sensitivity between the coating and developing apparatuses 2, the measurement of parameter sensitivity can be omitted, and correction values ​​for reducing differences in film thickness distribution between modules can be calculated. (Adjustment of Valve Closing Timing and Discharge Amount in the Liquid Processing Unit) Next, the case where the closing timing of the on / off valve 46 of the processing fluid supply unit 40 is used as one of the control parameters of the liquid processing unit U1 will be explained. It has been confirmed that by adjusting the closing timing of the on / off valve 46, the film thickness distribution on the surface of the workpiece W changes. Therefore, the closing timing of the on / off valve 46 can also be used as one of the control parameters of the liquid processing unit U1. The closing timing refers to the timing of switching the on / off valve 46 from a state where processing fluid from the processing fluid supply unit 40 is supplied to the workpiece W to a closed state. By switching the on / off valve 46 to the closed state, the supply of processing fluid from the nozzle 42 is stopped. By adjusting this closing timing and other control parameters of the liquid processing unit U1, the film thickness distribution on the surface of the workpiece W can be adjusted. On the other hand, when using the closing sequence of the on / off valve 46 as a control parameter, changing the closing sequence means that the supply amount of processing fluid to the workpiece W can be changed. This may affect the film thickness of the entire processing film AF on the workpiece W. Therefore, when changing the closing sequence without changing the supply amount of processing fluid, it is necessary to adjust the supply amount of processing fluid from the processing fluid supply unit 40 so that a predetermined amount of processing fluid is supplied to the workpiece W when the on / off valve 46 is closed at the changed closing sequence. Specifically, it is necessary to adjust the discharge pressure of the processing fluid discharged from the nozzle 42 by adjusting the pressurization amount via the pump 45, thereby adjusting the discharge amount of the processing fluid. In addition, when obtaining parameter sensitivity, it is necessary to calculate the parameter sensitivity after adjusting the discharge amount of the processing fluid that changes based on the closing sequence. The following is a variation of a method for adjusting the discharge volume of the processing fluid from the processing fluid supply unit 40 based on changes in the closing timing of the on / off valve 46. The processing related to this discharge volume adjustment can be performed by the module calibration value calculation unit 107 of the control device 100. Specifically, when the module calibration value calculation unit 107 calculates the calibration value for the closing timing of the on / off valve 46, in order not to change the corresponding discharge volume, the discharge pressure of the processing fluid from the processing fluid supply unit 40 (i.e., the pressurization amount of the pump 45) can be specified. Figure 15 is a diagram showing the specific sequence for adjusting the discharge volume of the processing fluid. First, the control device 100 executes step S71. In step S71, the control device 100 obtains the relationship between the closing timing of the on / off valve 46 and the discharge volume of the processing fluid from the processing fluid supply unit 40. During the stage of obtaining the adjustment setting value from the user, the pressurization amount of the pump 45 of the processing fluid supply unit 40 is predetermined. Therefore, in step S71, as shown in Figure 16(a), information related to the relationship between the closing timing and the discharge volume of the processing fluid is obtained. In this case, assuming there is a proportional relationship between the closing timing and the discharge volume of the processing fluid, the closing timing X0 for achieving the target value L of the processing fluid supply volume to the workpiece W can be determined. Next, the control device 100 executes step S72. In step S72, the control device 100 calculates the optimal value for the shutdown timing. As shown in the above embodiment, after calculating the parameter sensitivity, the optimal value is calculated in the order of calculating the correction values ​​of the control parameters for each module. By using the shutdown timing as one of the control parameters, calculating the correction value of the shutdown timing in a specific module, and reflecting that correction value, the optimal value can be obtained. Next, the control device 100 executes step S73. In step S73, the control device 100 changes the pressurization rate of the pump 45, causing the processing fluid supply unit 40 to operate with the shutdown timing at its optimal value and setting the processing fluid supply amount to a set value. The pressurization rate of the pump 45 is initially set to supply a predetermined amount of processing fluid to the workpiece W without adjusting the shutdown timing. On the other hand, by adjusting the shutdown timing, the time for supplying processing fluid to the workpiece W is changed. Therefore, by adjusting the pressurization rate, the processing fluid supply amount per unit time can be adjusted. Specifically, as shown in Figure 16(a), assume that the optimal value of the shutdown timing X1 has shifted by Δx from the initial shutdown timing X0. In this case, the amount of processed fluid discharged increases with the extension of the discharged time, assuming an actual increase of ΔL. This relationship is illustrated using the relationship between the discharged pressure and the discharged amount of processed fluid shown in Figure 16(b). If the shutdown timing is set to X0, the discharged pressure and the discharged amount of processed fluid exhibit a calibration curve C. X0 The relationship is shown. At this time, when the discharge pressure is set to the initial value D0, the processing fluid corresponding to the target value L is supplied to the workpiece W. On the other hand, when the shutdown timing is set to X1, the processing fluid supply increases by ΔL. Therefore, the calibration curve representing the discharge pressure versus the processing fluid discharge volume can be obtained from the calibration curve C. X0 The change is made using a calibration curve C representing the discharge pressure D0 versus the increased treatment fluid supply at point C0. X1 By determining the calibration curve C X1 It is possible to determine the supply and the calibration curve C. X1 The target value L corresponds to the discharge pressure D1 of the treated fluid. Therefore, in order to determine the discharge pressure D1 of the supplied treated fluid corresponding to the target value L, it is necessary to refer to the calibration curve C. X0 The relationship with point C0 determines the calibration curve C. X1 Therefore, the following will explain how to set the calibration curve C. X1 Four methods. First, as a first method, one can cite the calibration curve C as an example. X0 The method of parallel translation without alteration. Figure 16(b) shows an example of this parallel translation. Calibration curve C X1With calibration curve C X0 The same slope, and is shifted parallel to pass through point C0. Thus, the correction curve C is set. X1 Then, based on the correction curve C X1 The intersection with the target value L yields the discharge pressure D1 corresponding to the optimal value of the shutdown timing. The second to fourth methods are all based on the assumption that the slope of the calibration curve changes with the shutdown timing. Firstly, as the second method, we can cite the calibration curve C... X0 This method adjusts the slope based on the premise that the conditions and the discharge pressure when the discharge volume becomes 0 are the same. Figure 17(a) shows this example. Calibration curve C X1 Set to pass through calibration curve C X0 The point where the output is 0 and the point C0 when the above shutdown timing is changed. The calibration curve C is set in this way. X1 Then, according to calibration curve C X1 The intersection point with the target value L is used to determine the discharge pressure D1 corresponding to the optimal value of the shutdown timing. The third method uses the discharge ratio to adjust the slope of the calibration curve, since the discharge volume varies with the shutdown timing. Figure 17(b) illustrates this example. Calibration curve C X1 It is obtained by multiplying S by (output after timing change / output before timing change), where S is the calibration curve C. X0 The slope of the curve (output after timing change / output before timing change) can be calculated from (L + ΔL) / L. Therefore, S × (L + ΔL) / L becomes the calibration curve C. X1 The slope. The calibration curve C is set in this way. X1 Then, according to calibration curve C X1 The intersection point with the target value L is used to determine the discharge pressure D1 corresponding to the optimal value of the shutdown timing. The fourth method is to adjust the slope of the calibration curve using the ejection time, since the ejection time is changed by altering the shutdown timing. Figure 17(c) illustrates this example. Calibration Curve C X1This is obtained by multiplying S by (e.g., output time after timing change / output time before timing change), where S is the calibration curve C. X0 The slope of the curve. Assuming the discharge time of the treated fluid when the shutdown timing is the initial value X0 is T0, (discharge time after shutdown timing change / discharge time before shutdown timing change) can be calculated from (T0 + (X1 - X0)) / T0. Therefore, S × (T0 + (X1 - X0)) / T0 becomes the calibration curve C. X1 The slope. The calibration curve C is set in this way. X1 Then, according to calibration curve C X1 The intersection point with the target value L is used to determine the discharge pressure D1 corresponding to the optimal value of the shutdown timing. This allows for the calibration curve C of the discharge pressure D1 corresponding to the optimal value used to calculate the shutdown timing. X1 Various changes can be made to the setting method. Which of these methods to use can be determined, for example, by considering the characteristics of the processing fluid supply unit 40. Regardless of the method used, the adjustment accuracy of the calibration curve is high enough, thus allowing for high-precision adjustment of the processing fluid discharge rate. The fourth method, in particular, allows for even more accurate and precise calibration of the processing fluid discharge rate because it obtains the calibration curve with reduced influence from deviations in the actual processing fluid discharge rate. Furthermore, the method for adjusting the discharge volume of the processing fluid in the aforementioned processing fluid supply unit 40 is based on a pre-prepared calibration curve C. X0 This is a premise, but the invention is not limited thereto. That is, it is also possible to use a method without using calibration curve C. X0 The adjustment method. For example, the control device 100 stores the minimum discharge pressure at which the processed liquid discharge rate becomes 0 or higher, obtained through experiments, and obtains a combination of discharge pressure and processed liquid discharge rate when the processed liquid supply unit 40 is actually activated. By using the values ​​of these two combinations, an approximate calibration curve C can be obtained. X0 The characteristic straight line can replace the calibration curve C. X0 Application. When each module uses a common pump, since the relative height or piping length between the pump and the nozzle of each module is different, a characteristic line that better matches the module characteristics can be obtained by memorizing the minimum discharge pressure of each module. If a combined value is obtained when the processing fluid supply unit 40 operates during the setting of the processing fluid (when the processing fluid is introduced into the device), it can be applied in a feedforward manner during actual discharge to adjust the discharge volume. Alternatively, the combined value can be obtained during actual discharge for adjusting the discharge volume, and the pressure can be set in a feedback manner during the next actual discharge. In fact, in order to obtain the calibration curve C used in the first to fourth methods mentioned above X0 For example, complex operations such as measuring the discharge volume of the treatment liquid using an electronic balance are required. On the other hand, if the method using the aforementioned characteristic line is adopted, it is not necessary to perform the calibration curve C. X0 This makes it easier to adjust the discharge rate of the treatment solution. [Function] Based on the coating and developing apparatus 2 and the control parameter setting method described above, the film thickness value of the substrate-related processed film after film formation by the first film formation module according to the first parameter group, and the film thickness value of the substrate-related processed film after film formation by the second film formation module according to the second parameter group are obtained, and the first parameter group and the second parameter group are updated to reduce the difference between them. Therefore, the difference in film thickness formed on the substrate in different modules is reduced. Previously, in order to adjust the film thickness of the processed film formed on the substrate by processing with the same type of film deposition module, the control parameters in each module were examined for calibration. However, the operation of measuring the film thickness value of the substrate after actual film processing in each module and updating the first and second parameter groups to reduce the difference in the measurement results was not performed. In the above configuration, since the film thickness value can be reduced based on the measurement results in each module, the difference in film thickness values ​​can be further reduced by adjusting the control parameters more finely. Furthermore, by obtaining the film thickness value of the processed film on the substrate after film deposition using the updated first and second parameter groups, it is possible to verify whether the difference in film thickness values ​​has been reduced based on the updated first and second parameter groups. Therefore, assuming that the difference in film thickness values ​​has not been reduced, as described above, countermeasures such as updating the first and second parameter groups again can be taken. Thus, the difference in film thickness formed on the substrate in different modules can be further reduced. When the film-forming module includes a processing liquid supply unit 40, the discharge state of the processing liquid from the processing liquid supply unit 40 may affect the film thickness value. Therefore, as described above, by using a parameter for adjusting the discharge state of the processing liquid as a control parameter, adjustments can be made to reduce the difference in film thickness values. Furthermore, when the processing fluid supply unit 40 has an on / off valve 46, the flow of processing fluid through the valve may affect the film thickness value. Therefore, by using the valve closing sequence as a parameter to adjust the discharge state of the processing fluid, adjustments can be made to reduce the difference in film thickness values. However, as mentioned above, changing the closing timing of the on / off valve 46 affects the supply of the processing fluid. If the supply of the processing fluid is changed, the film thickness may change significantly from the predetermined value. Therefore, by updating the discharge pressure according to the changed closing timing to keep the supply of processing fluid from the processing fluid supply unit constant, the film thickness variation caused by the change in the supply of processing fluid can be suppressed. Furthermore, when the film-forming module includes a holding and rotating section that holds and rotates the substrate, the rotation number of the holding and rotating section during liquid supply (discharge rotation number) and the rotation number of the holding and rotating section during liquid drying (drying rotation number) both affect the film thickness. Specifically, the discharge rotation number is the rotation number when the liquid diffuses within the surface of the workpiece W, and the film thickness distribution may vary depending on the balance with the discharge rate of the liquid. On the other hand, the drying rotation number is the rotation number during drying; if it is high, the amount of undried liquid falling from the periphery (edge) of the workpiece W increases, and the overall processed film tends to become thinner; conversely, if it is low, it tends to become thicker. Therefore, these rotation numbers all affect the film thickness. Therefore, by using the rotation number of the holding and rotating section during liquid supply (discharge rotation number) or the rotation number of the holding and rotating section during drying (drying rotation number) as control parameters, adjustments can be made to reduce the difference in film thickness. Alternatively, both the rotation numbers of the holding and rotating sections during liquid supply and drying can be used. The film thickness value can be represented as a film thickness profile composed of multiple components related to the shape of the film thickness distribution. Furthermore, the sensitivity of multiple control parameters to the aforementioned film thickness value can be determined based on their relationship with each component contained in the aforementioned film thickness profile. Additionally, when updating the control parameters, the sensitivity of multiple control parameters to the film thickness value can be used. Thus, by representing the film thickness value as a film thickness profile composed of multiple components related to the shape of the film thickness distribution, it is possible to determine which elements related to the film thickness distribution are included in the film thickness value. Furthermore, by calculating the contribution of each control parameter included in the parameter group to the variation of the film thickness value as the sensitivity to the film thickness value, the control parameters can be updated with higher precision, thereby reducing the difference in film thickness values. Information relating the sensitivity of multiple control parameters to film thickness can be transmitted to another substrate processing apparatus, different from the substrate processing apparatus. In this case, information relating the sensitivity of multiple control parameters to film thickness can be used in multiple substrate processing apparatuses, thus improving convenience. Furthermore, the measurement unit can further include acquiring the offset of the film thickness value when acquiring the film thickness value of the processed film. As mentioned above, the measurement unit (spectral measurement unit 60) for measuring film thickness may contain offset components from the device configuration, etc. Therefore, by adopting a configuration that acquires the offset, a measurement result of the film thickness taking the offset into account can be obtained. Therefore, using this information, more precise adjustments can be made to reduce the difference in film thickness values. Alternatively, the system can be configured to update the aforementioned first parameter group and second parameter group for multiple types of film-forming processes, and instruct the execution of a film-forming process that combines the updated control parameters related to the multiple types of film-forming processes obtained for the same film-forming module. In this case, when performing the same type of film-forming process in the same film-forming module, processing using the updated control parameters can be performed without needing to update the control parameters again. Therefore, the convenience of film formation is improved. [Variations] The above describes various exemplary embodiments, but the implementation is not limited to these exemplary embodiments. Various omissions, substitutions, and changes can be made. Furthermore, elements from different embodiments can be combined to form other embodiments. For example, the method for measuring the thickness of the processing film AF in the workpiece W is not limited to the method described in the above embodiments. While the above embodiments measure the film thickness by laser irradiation, the film thickness analysis method described in the above embodiments can be applied as long as a measured value (estimated value) of the thickness of the processing film AF formed on the workpiece W can be obtained. Therefore, any known film thickness measurement method can be used, as long as film thickness information at multiple measurement points on the workpiece W can be obtained; the method is not particularly limited. Furthermore, even when using the film thickness measurement method described in the above embodiments, the configuration and structure of each part can be appropriately modified. Furthermore, in the above example, the thickness of the treatment film AF of the treatment solution (resist) used to form the resist film was estimated. In contrast, the film thickness analysis method described in the above embodiment can also estimate the thickness of the coating film of the treatment solution used to form films other than the resist film (e.g., lower or upper films). Furthermore, the present invention can also be applied to the developing solution used to develop the resist film. Furthermore, the configuration of the corresponding film-forming module can be changed depending on the type of film to be applied. Moreover, even if the film to be applied is the same, the film-forming module used to adjust the control parameters can be changed. The configuration described in the above embodiments can be applied regardless of the type of film-forming module to be applied. Additionally, the configuration described in the above embodiments can also be applied when there are multiple types of film-forming modules, such as the liquid processing unit U1 and the heat treatment unit U2. It should be understood from the above description that, for illustrative purposes, various embodiments of this disclosure have been set forth in this specification, and various modifications may be made without departing from the scope and spirit of this disclosure. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are indicated by the appended claims. 1: Substrate processing system (substrate processing apparatus) 2: Coating and developing apparatus 3: Exposure apparatus 30: Rotary holding unit 32: Holding unit 34: Shaft 36: Rotary drive unit 40: Processing liquid supply unit 42: Nozzle 44: Supply source 45: Pump 46: On / off valve 48: Nozzle drive unit 60: Spectrophotometer (measuring unit) 100: Control device (control unit) 101: Substrate processing control unit 102: Processing information memory unit 103: Film thickness calculation unit 104: Adjustment setting value acquisition unit 105: Film thickness information acquisition unit 106: Parameter sensitivity calculation unit 107: Module calibration value calculation unit 108: Calibration information memory unit 110: Inter-module adjustment unit S11: Indicator for parameter sensitivity acquisition S12: Handling queries for condition setting values S13: Indicator for adjusting setting value S14: Selection of formulation for parameter sensitivity acquisition S15: Instructions for workpiece preparation S16: Measurement start indication S17: Substrate processing. Indication of film thickness measurement. S18: Substrate processing. Film thickness measurement. S19: Film Thickness Measurement Results S20: Calculation of parameter sensitivity S21: Report Completed

Claims

1. A control parameter setting method for setting control parameters of a film-forming module included in a substrate processing apparatus, the control parameter setting method comprising: acquiring a first parameter group as a control parameter group and a second parameter group as a control parameter group, the first parameter group including a plurality of control parameters for controlling film-forming processes in a first film-forming module, and the second parameter group for controlling film-forming processes in a second film-forming module; acquiring a film thickness value of a substrate-related processed film after film-forming by the first film-forming module according to the first parameter group, and a film thickness value of a substrate-related processed film after film-forming by the second film-forming module according to the second parameter group; and updating the first parameter group and the second parameter group to reduce the difference between the film thickness value of the substrate acquired in the first film-forming module and the film thickness value of the substrate acquired in the second film-forming module; the film-forming module comprising: a holding and rotating unit for holding and rotating a substrate; and a processing liquid supply unit for supplying processing liquid to the rotating substrate; The aforementioned first parameter group and second parameter group at least include parameters for adjusting the discharge state from the aforementioned processing fluid supply unit. The aforementioned processing fluid supply unit has a valve that controls the flow of processing fluid in the processing fluid flow path by means of opening and closing operations. The parameter for adjusting the aforementioned discharge state is the closing sequence of the aforementioned valve. The aforementioned processing fluid supply unit can change the discharge pressure of the aforementioned processing fluid. And when the closing sequence of the aforementioned valve included in the aforementioned first parameter group or second parameter group is updated, the aforementioned discharge pressure can be updated according to the changed closing sequence so that the supply amount of processing fluid from the aforementioned processing fluid supply unit becomes constant.

2. The control parameter setting method of claim 1, further comprising: obtaining the film thickness value of the substrate-related processing film after film formation by the first film formation module according to the updated first parameter group, and the film thickness value of the substrate-related processing film after film formation by the second film formation module according to the updated second parameter group.

3. The control parameter setting method of claim 1, wherein the aforementioned control parameter group includes the rotation number of the aforementioned holding rotating part when supplying the aforementioned processing liquid, or the rotation number of the aforementioned holding rotating part when drying the aforementioned supplied processing liquid.

4. The control parameter setting method of claim 1, wherein the aforementioned film thickness value is represented as a film thickness profile composed of multiple components related to the shape of the film thickness distribution, further comprising: determining the sensitivity of the aforementioned multiple control parameters contained in the aforementioned first parameter group and the aforementioned second parameter group to the aforementioned film thickness value based on the relationship between them and each component contained in the aforementioned film thickness profile; and updating each control parameter contained in the aforementioned first parameter group and the aforementioned second parameter group by using the sensitivity of the aforementioned multiple control parameters to the aforementioned film thickness value.

5. The control parameter setting method as described in claim 4, further comprising: transmitting information related to the sensitivity of the aforementioned plurality of control parameters to the aforementioned film thickness value to a substrate processing apparatus different from the aforementioned substrate processing apparatus.

6. The control parameter setting method of claim 1, further comprising: obtaining the offset of the film thickness value when obtaining the film thickness value of the processed film in the aforementioned first film-forming module or the aforementioned second film-forming module.

7. The control parameter setting method of claim 1, further comprising: updating the aforementioned first parameter group and the aforementioned second parameter group for multiple types of film formation processes, and instructing and executing a film formation process that combines the updated control parameters related to the aforementioned multiple types of film formation processes obtained for the same film formation module.

8. A substrate processing apparatus, comprising: a control unit that controls a first film-forming module and a second film-forming module for performing film-forming processing on a substrate, the control unit comprising: a parameter acquisition unit that acquires a first parameter group as a control parameter group and a second parameter group as a control parameter group, the first parameter group including a plurality of control parameters for controlling the film-forming processing in the first film-forming module, the second parameter group for controlling the film-forming processing in the second film-forming module; a film thickness information acquisition unit that acquires the film thickness value of a substrate-related processed film after film-forming by the first film-forming module according to the first parameter group, and the film thickness value of a substrate-related processed film after film-forming by the second film-forming module according to the second parameter group; and a parameter update unit that updates the first parameter group and the second parameter group to reduce the difference between the film thickness value of the substrate acquired in the first film-forming module and the film thickness value of the substrate acquired in the second film-forming module; The aforementioned film-forming module includes: a holding and rotating part for holding and rotating a substrate; and a processing liquid supply part for supplying processing liquid to the aforementioned rotating substrate; the aforementioned first parameter group and second parameter group at least include parameters for adjusting the discharge state from the aforementioned processing liquid supply part; the aforementioned processing liquid supply part has a valve for controlling the flow of processing liquid in the processing liquid flow path by means of opening and closing operation; the parameter for adjusting the aforementioned discharge state is the closing timing of the aforementioned valve; the aforementioned processing liquid supply part can change the discharge pressure of the aforementioned processing liquid; and when the closing timing of the aforementioned valve included in the aforementioned first parameter group or second parameter group is updated, the aforementioned discharge pressure is updated according to the changed closing timing so that the supply amount of processing liquid from the aforementioned processing liquid supply part becomes constant.

9. The substrate processing apparatus of claim 8, wherein the aforementioned film thickness information acquisition unit acquires the film thickness value of the substrate-related processing film after the aforementioned first film deposition module has deposited the film according to the aforementioned updated first parameter group, and the film thickness value of the substrate-related processing film after the aforementioned second film deposition module has deposited the film according to the aforementioned updated second parameter group.

10. The substrate processing apparatus of claim 8, wherein the aforementioned group of control parameters includes the rotation number of the aforementioned holding rotating part when the aforementioned processing liquid is supplied, or the rotation number of the aforementioned holding rotating part when the aforementioned supplied processing liquid is dried.

11. The substrate processing apparatus of claim 8, wherein the aforementioned film thickness value is represented as a film thickness profile composed of a plurality of components related to the shape of the film thickness distribution, the aforementioned control unit further includes: a parameter sensitivity calculation unit that determines the sensitivity of the plurality of control parameters contained in the aforementioned first parameter group and the aforementioned second parameter group to the aforementioned film thickness value based on the relationship between the control parameters and each component contained in the aforementioned film thickness profile, and the aforementioned parameter updating unit updates each control parameter contained in the aforementioned first parameter group and the aforementioned second parameter group using the sensitivity of the plurality of control parameters to the aforementioned film thickness value.

12. The substrate processing apparatus of claim 8, wherein the aforementioned control unit further includes: an offset acquisition unit that acquires an offset of the film thickness value when acquiring the film thickness value of the processed film in the aforementioned first film-forming module or the aforementioned second film-forming module.

13. The substrate processing apparatus of claim 8, wherein the aforementioned control unit further comprises: an instruction unit that instructs the aforementioned first parameter group and the aforementioned second parameter group to be updated in the aforementioned parameter update unit for multiple types of film deposition processes, and instructs the execution of a film deposition process that combines the updated control parameters related to the aforementioned multiple types of film deposition processes obtained for the same film deposition module.

14. A computer-readable memory medium storing a program in a device for executing a control parameter setting method as requested in item 1.

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