Single wafer processing environments with spatial separation

Abstract

An apparatus and method for processing one or more wafers are described. A plurality of processing stations are arranged in a circular configuration around a rotation axis. A support assembly having a rotatable central base defining the rotation axis, at least two support arms extending from the central base, and heaters on each of the support arms is positioned adjacent to the processing stations, such that the heaters can be moved between the various processing stations to perform one or more process conditions.

Description

Technical Field

[0001] The present disclosure generally relates to apparatus for depositing thin films and, more particularly, to an apparatus having a plurality of movable heated wafer supports and spaced-apart processing stations. Prior Art

[0002] Current atomic layer deposition (ALD) processes present many potential problems and difficulties. Many ALD chemistries (e.g., precursors and reactants) are "incompatible," meaning they cannot be mixed together. If incompatible chemistries are mixed, a chemical vapor deposition (CVD) process may occur instead of an ALD process. CVD processes generally have lower thickness control than ALD processes and / or may result in the generation of gas-phase particles, which can cause defects in the resulting device. Traditional time-domain ALD processes, which flow a single reactant gas into the processing chamber at a time, have long purge / pump-out times, preventing the chemistries from mixing in the gas phase. Spatial ALD chambers can move one or more wafers from one environment to a second environment more rapidly than a time-domain ALD chamber can pump / purge at, resulting in higher throughput.

[0003] The semiconductor industry demands high-quality films that can be deposited at lower temperatures (e.g., below 350°C). To deposit high-quality films at temperatures below those required for thermal-only processes, alternative energy sources are needed. Plasma solutions can be used to provide additional energy to ALD films in the form of ions and radicals. The challenge is achieving sufficient energy on the vertical sidewalls of ALD films. Typically, ions are accelerated through a sheath above the wafer surface in a direction perpendicular to the wafer surface. As a result, the ions provide energy to the horizontal ALD film surface, but insufficient energy is provided to the vertical surfaces, as the ions travel parallel to them.

[0004] Some process chambers incorporate capacitively coupled plasma (CCP). CCP is generated between the top electrode and the wafer, often referred to as CCP parallel-plate plasma. CCP parallel-plate plasma produces very high ion energies across both sheaths and, as a result, performs poorly on vertical sidewall surfaces. Better vertical ALD film properties can be achieved by spatially moving the wafer into an environment optimized for generating high radical and ion fluxes at lower energies and with a wider angular distribution toward the wafer surface. Such plasma sources include microwaves, inductively coupled plasma (ICP), or higher-frequency CCP solutions with a third electrode (i.e., the plasma is generated between two electrodes above the wafer, without the wafer serving as the primary electrode).

[0005] Current spatial ALD processing chambers rotate multiple wafers on a heated circular platen at a constant speed, moving the wafers from one processing environment to an adjacent environment. The different processing environments create a separation of incompatible gases. However, current spatial ALD processing chambers do not allow for optimized plasma environment for plasma exposure, resulting in non-uniformity, plasma damage, and / or process flexibility issues.

[0006] For example, process gases flow across the wafer surface. Because the wafer rotates about an offset axis, the leading and trailing edges of the wafer have different flow lines. Furthermore, there are flow differences between the inner and outer diameter edges of the wafer, caused by slower speeds at the inner edge and faster speeds at the outer edge. These flow non-uniformities can be optimized but not eliminated. Plasma damage can occur when exposing the wafer to non-uniform plasma. The constant rotation speed of these spatial processing chambers requires moving the wafer in and out of the plasma, so some portions of the wafer are exposed to the plasma while other areas are outside. Furthermore, due to the constant rotation speed, it can be difficult to vary the exposure time within the spatial processing chamber. For example, a process uses a 0.5-second exposure to Gas A, followed by a 1.5-second plasma treatment. Because the tool operates at a constant rotation speed, the only way to perform this step is to make the plasma environment three times larger than the Gas A distribution environment. Running another process with equal Gas A and plasma time would require hardware changes. Current spatial ALD chambers can only slow down or speed up the rotational speed, but cannot adjust the time difference between steps without changing the chamber hardware to accommodate smaller or larger areas. Therefore, there is a need in the art for improved deposition apparatus and methods. Summary of the Invention

[0007] One or more embodiments of the present disclosure are directed to a support assembly comprising a rotatable central base, at least two support arms, and a heater. The rotatable central base defines an axis of rotation. Each of the support arms extends from the central base and has an inner end in contact with the central base and an outer end. A heater having a support surface is positioned on the outer end of each of the support arms.

[0008] Additional embodiments of the present disclosure are directed to a processing chamber comprising a housing, a plurality of processing stations, and a support assembly. The housing has walls, a bottom, and a top defining an interior volume. The plurality of processing stations are within the interior volume of the housing. The processing stations are positioned in a circular arrangement about an axis of rotation. Each of the processing stations includes a gas injector having a front face. The front faces of each of the gas injectors are substantially coplanar. The support assembly is positioned within the interior volume of the housing below the plurality of processing stations. The support assembly includes a rotatable center base having a plurality of support arms extending from the center base. Each support arm has an inner end in contact with the center base and an outer end. A heater having a support surface is positioned on the outer end of each of the support arms. Simple diagram description

[0009] A more detailed description of the disclosure, which may be understood in detail by referring to the embodiments described above, and briefly summarized above, may be obtained by reference to the accompanying drawings, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, as the disclosure may admit to other equally effective embodiments.

[0010] Figure 1 shows a cross-sectional isometric view of a processing chamber according to one or more embodiments of the present disclosure;

[0011] Figure 2 shows a cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure;

[0012] Figure 3 shows a bottom parallel projection diagram of the support assembly according to one or more embodiments of the present disclosure;

[0013] Figure 4 shows a top parallel projection view of the support assembly according to one or more embodiments of the present disclosure;

[0014] Figure 5 shows a top parallel projection view of the support assembly according to one or more embodiments of the present disclosure;

[0015] Figure 6 shows a cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure;

[0016] Figure 7 shows a partial cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure;

[0017] Figure 8 shows a partial cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure;

[0018] Figure 9 is a partial cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure;

[0019] Figure 10A is a top isometric view of a support plate according to one or more embodiments of the present disclosure;

[0020] Figure 10B is a cross-sectional side view of the support plate of FIG. 10A taken along line 10B-10B 'taken;

[0021] Figure 11A shows a bottom isometric view of a support plate according to one or more embodiments of the present disclosure;

[0022] Figure 11B is a cross-sectional side view of the support plate of FIG. 11A taken along line 11B-11B 'taken;

[0023] Figure 12A shows a bottom isometric view of a support plate according to one or more embodiments of the present disclosure;

[0024] Figure 12B is a cross-sectional side view of the support plate of FIG. 12A taken along line 12B-12B 'taken;

[0025] Figure 13 is a cross-sectional isometric view of the top plate of the processing chamber according to one or more embodiments of the present disclosure;

[0026] Figure 14 is an exploded cross-sectional view of a processing station according to one or more embodiments of the present disclosure;

[0027] Figure 15 is a schematic cross-sectional side view of a top plate of a processing chamber according to one or more embodiments of the present disclosure;

[0028] Figure 16 is a partial cross-sectional side view of a processing station in a processing chamber according to one or more embodiments of the present disclosure;

[0029] Figure 17 is a schematic representation of a processing platform according to one or more embodiments of the present disclosure;

[0030] Figures 18A to 18I are schematic diagrams illustrating the configuration of processing stations in a processing chamber according to one or more embodiments of the present disclosure;

[0031] 19A and 19B show schematic representations of a process according to one or more embodiments of the present disclosure; and

[0032] 20 shows a cross-sectional schematic representation of a support assembly according to one or more embodiments of the present disclosure. Implementation Method

[0033] Before describing several exemplary embodiments of the present disclosure, it should be understood that the present disclosure is not limited to the details of construction or process steps described in the following description. The present disclosure is capable of other embodiments and of being practiced or implemented in various ways.

[0034] As used herein, "substrate" refers to any substrate or material surface formed on a substrate on which film processing is performed during a manufacturing process. For example, depending on the application, substrate surfaces on which processing may be performed include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials. Substrates include, but are not limited to, semiconductor wafers. Substrates may be exposed to pretreatment processes to polish, etch, reduce, oxidize, hydroxylate, anneal, and / or bake the substrate surface. In addition to performing film processing directly on the surface of the substrate itself, any of the disclosed film processing steps may also be performed on an underlying layer formed on the substrate, as described in more detail below, and the term "substrate surface" is intended to include such underlying layers when the context dictates. Thus, for example, if a film / layer or portion of a film / layer has been deposited onto a substrate surface, the exposed side of the newly deposited film / layer becomes the substrate surface.

[0035] As used in this specification and the appended claims, the terms "precursor," "reactant," "reactant gas," and the like are used interchangeably to refer to any gaseous species that can react with a substrate surface or with a film formed on a substrate surface.

[0036] One or more embodiments of the present disclosure utilize spatial separation between two or more processing environments. Some embodiments advantageously provide apparatus and methods for maintaining separation of incompatible gases. Some embodiments advantageously provide apparatus and methods that include optimizable plasma processing. Some embodiments advantageously provide apparatus and methods that allow for differentiated heat distribution environments, differentiated plasma processing environments, and other environments.

[0037] One or more embodiments of the present disclosure are directed to a processing chamber having four spatially separated processing environments (also referred to as processing stations). Some embodiments have more than four spatially separated processing environments, while some embodiments have fewer than four. The processing environments can be mounted coplanar with wafers moving in a horizontal plane. The process environments are arranged in a circular arrangement. A rotatable structure, on which one to four (or more) individual wafer heaters are mounted, moves the wafers in a circular path having a similar diameter to the process environments. Each heater can be temperature-controlled and can have one or more concentric zones. For wafer loading, the rotatable structure can be lowered, allowing a vacuum robot to pick up a finished wafer and place an unprocessed wafer on lift pins positioned above each wafer heater (in a lower Z position). In operation, each wafer can remain in an independent environment until processing is complete, after which the rotatable structure can be rotated to move the wafer on the heater to the next environment (90° rotation for four stations, 120° rotation for three stations) for further processing.

[0038] Some embodiments of the present disclosure advantageously provide spatial separation of incompatible gases during ALD. Some embodiments allow for higher throughput and tool resource utilization compared to traditional temporal or spatial process chambers. Individual process environments can operate at different pressures. Heater rotation includes Z-direction motion, allowing for sealing of individual heaters within the chamber.

[0039] Some embodiments advantageously provide a plasma environment that may include one or more of microwave, ICP, parallel plate CCP, or 3-electrode CCP. The entire wafer may be immersed in the plasma while eliminating plasma damage from non-uniform plasma across the wafer.

[0040] In some embodiments, a small gap between the showerhead and the wafer can be used to increase distributed gas utilization and cycle time. Precise showerhead temperature control and a wide operating range (up to 230°C) are also provided. While not being bound by theory, it is believed that the closer the showerhead temperature is to the wafer temperature, the better the wafer temperature uniformity.

[0041] Showerheads can include small pores (<200 µm), a large number of pores (several thousand to over 10 million), and recursively feed the gas distribution within the showerhead using a small distribution volume to increase velocity. The small size and large number of pores can be created by laser drilling and dry etching. As the wafer approaches the showerhead, the gas passing through the vertical pores experiences turbulence toward the wafer. Some embodiments allow for a slower gas to be evenly distributed across the wafer surface by using a showerhead with a large number of closely spaced pores.

[0042] Some embodiments are directed to an integrated processing platform using multiple spatially separated processing stations (chambers) on a single tool. A processing platform may have various chambers that can perform different processes.

[0043] Some embodiments of the present disclosure are directed to apparatus and methods for moving a wafer attached to a wafer heater from one environment to another. Rapid movement can be achieved by electrostatically clamping (or chucking) the wafer to the heater. The wafer can be moved in a linear or circular motion.

[0044] Some embodiments of the present disclosure are directed to methods for processing one or more substrates. Examples include, but are not limited to: running one wafer on one heater through a plurality of different sequential environments that are spatially separated; running two wafers on two wafer heaters through three environments (two environments are identical and one different environment is between the two similar environments); wafer one encounters environment A then B and repeats, while wafer two encounters B then A and repeats; one environment remains idle (no wafers); running two wafers through two first environments and two second environments, where both wafers encounter the same environment simultaneously (i.e., both wafers are in A and then both proceed to B); four wafers with two A and two B environments; and two wafers processed in environment A while the other two wafers are processed in environment B. In some embodiments, wafers are repeatedly exposed to environment A and environment B, and then exposed to a third environment located in the same chamber.

[0045] In some embodiments, a wafer passes through a plurality of chambers for processing, wherein at least one of the chambers performs sequential processing using a plurality of spatially separated environments within the same chamber.

[0046] Some embodiments are directed to apparatus having spatially separated processing environments within the same chamber, where the environments are at significantly different pressures (e.g., one environment <100 mT and another environment >3 T). In some embodiments, a heater rotary robot moves in the z-axis to seal each wafer / heater into the spatially separated environments.

[0047] Some embodiments include a structure built above the chamber with a vertical structural member that applies a force upward toward the center of the chamber lid to counteract deflection caused by atmospheric pressure on one side and vacuum on the other. The force amplitude of this structure can be mechanically adjusted based on the deflection of the top plate. Force adjustment can be accomplished automatically using feedback circuitry and force sensors, or manually using, for example, a screw that can be turned by an operator.

[0048] Figures 1 and 2 illustrate a processing chamber 100 according to one or more embodiments of the present disclosure. Figure 1 shows a processing chamber 100 in a cross-sectional isometric view according to one or more embodiments of the present disclosure. Figure 2 shows a cross-section of a processing chamber 100 according to one or more embodiments of the present disclosure. Accordingly, some embodiments of the present disclosure are directed to a processing chamber 100 that incorporates a support assembly 200 and a top plate 300.

[0049] The processing chamber 100 has a housing 102 having walls 104 and a bottom 106. The housing 102 and the top plate 300 define an interior volume 109 (also referred to as a processing volume).

[0050] The processing chamber 100 includes a plurality of processing stations 110. The processing stations 110 are positioned within the interior volume 109 of the housing 102 and are arranged in a circular arrangement around the rotational axis 211 of the support assembly 200. The processing stations 110 are spatially arranged around the interior volume 109 of the processing chamber 100. Each processing station 110 includes a gas injector 112 having a front face 114. In some embodiments, the front faces 114 of each of the gas injectors 112 are substantially coplanar. The processing stations 110 are defined as areas within which processing can occur. For example, the processing stations 110 may be defined by a support surface 231 of a heater 230 (described below) and the front faces 114 of the gas injectors 112.

[0051] The processing station 110 can be configured to perform any suitable process and provide any suitable process conditions. The type of gas injector 112 used will depend, for example, on the type of process being performed and the type of showerhead or gas injector. For example, a processing station 110 configured to operate as an atomic layer deposition apparatus may have a showerhead or vortex-type gas injector. However, a processing station 110 configured to operate as a plasma station may have one or more electrodes and / or ground plates configured to generate plasma while allowing the plasma gas to flow toward the wafer. The embodiment depicted in FIG2 has a different type of processing station 110 on the left side of the drawing (processing station 110a) than on the right side of the drawing (processing station 110b). Suitable processing stations 110 include, but are not limited to, thermal processing stations, microwave plasma, three-electrode CCP, ICP, parallel-plate CCP, UV exposure, laser processing, pumping chambers, annealing stations, and metrology stations.

[0052] Figures 3 through 6 illustrate a support assembly 200 according to one or more embodiments of the present disclosure. Support assembly 200 includes a rotatable central base 210. Rotatable central base 210 may have a symmetrical or asymmetrical shape and defines an axis of rotation 211. As can be seen in Figure 6, axis of rotation 211 extends in a first direction. This first direction may be referred to as a vertical direction or along the z-axis; however, it will be understood that the use of the term "vertical" is not limited to directions orthogonal to gravitational pull.

[0053] Support assembly 200 includes at least two support arms 220 connected to and extending from a central base 210. Support arms 220 have inner ends 221 and outer ends 222. Inner ends 221 contact central base 210, so that when central base 210 rotates about rotation axis 211, support arms 220 also rotate. Support arms 220 can be connected to central base 210 at inner ends 221 by a fastener (e.g., a bolt) or by being integrally formed with central base 210.

[0054] In some embodiments, the support arm 220 extends orthogonally to the rotation axis 211 such that one of the inner end 221 or the outer end 222 is farther from the rotation axis 211 than the other of the inner end 221 and the outer end 222 on the same support arm 220. In some embodiments, the inner end 221 of the support arm 220 is closer to the rotation axis 211 than the outer end 222 of the same support arm 220.

[0055] The number of support arms 220 in the support assembly 200 can vary. In some embodiments, there are at least two support arms 220, at least three support arms 220, at least four support arms 220, or at least five support arms 220. In some embodiments, there are three support arms 220. In some embodiments, there are four support arms 220. In some embodiments, there are five support arms 220. In some embodiments, there are six support arms 220.

[0056] The support arms 220 can be arranged symmetrically around the central base 210. For example, in a support assembly 200 having four support arms 220, each of the support arms 220 is positioned at intervals of 90° around the central base 210. In a support assembly 200 having three support arms 220, the support arms 220 are positioned at intervals of 120° around the central base 210. In other words, in embodiments having four support arms 220, the support arms are arranged to provide four-fold symmetry around the rotation axis 211. In some embodiments, the support assembly 200 has n support arms 220, and the n support arms 220 are arranged to provide n-fold symmetry around the rotation axis 211.

[0057] The heater 230 is positioned at the outer end 222 of the support arm 220. In some embodiments, each support arm 220 has a heater 230. The center of the heater 230 is positioned at a distance from the rotation axis 211 so that upon rotating the central base 210, the heater 230 moves in a circular path.

[0058] The heater 230 has a support surface 231 that can support a wafer. In some embodiments, the support surfaces 231 of the heater 230 are substantially coplanar. As used herein, "substantially coplanar" means that the plane formed by each support surface 231 is within ±5°, ±4°, ±3°, ±2°, or ±1° of the plane formed by the other support surfaces 231.

[0059] In some embodiments, the heater 230 is positioned directly on the outer end 222 of the support arm 220. In some embodiments, as shown in the drawings, the heater 230 is elevated above the outer end 222 of the support arm 220 by a heater spacer 234. The heater spacer 234 can be of any size and length to increase the height of the heater 230.

[0060] In some embodiments, channels 236 are formed in one or more of the central base 210, the support arms 220, and / or the heater spacers 234. The channels 236 may be used to route electrical connections or provide airflow.

[0061] The heater can be any suitable type of heater known to the skilled person. In some embodiments, the heater is a resistive heater having one or more heating elements within the heater body.

[0062] In some embodiments, the heater 230 includes additional components. For example, the heater may include an electrostatic chuck. The electrostatic chuck may include various wires and electrodes to hold a wafer positioned on the heater support surface 231 in place while the heater moves. This allows a wafer to be clamped to the heater at the beginning of a process and maintained in the same position on the same heater while moving to different process areas. In some embodiments, the wires and electrodes are routed through a channel 236 in the support arm 220. FIG7 shows an exploded view of a portion of the support assembly 200, illustrating the channel 236. The channel 236 extends along the support arm 220 and the heater spacer 234. The first electrode 251a and the second electrode 251b are in electrical communication with the heater 230 or with components within the heater 230 (e.g., a resistive wire). The first wire 253a is connected to the first electrode 251a at a first connector 252a. The second wire 253b is connected to the second electrode 251b at a second connector 252b.

[0063] In some embodiments, a temperature measurement device (e.g., a pyrometer, a thermistor, a thermocouple) is positioned within passageway 236 to measure one or more of the temperature of heater 230 or the temperature of a substrate on heater 230. In some embodiments, control and / or measurement leads of the temperature measurement device are routed through passageway 236. In some embodiments, one or more temperature measurement devices are positioned within processing chamber 100 to measure the temperature of heater 230 and / or the temperature of a wafer on heater 230. Suitable temperature measurement devices are known to those skilled in the art and include, but are not limited to, optical pyrometers and junction thermocouples.

[0064] Wires can be routed through the support arm 220 and support assembly 200 to connect to a power source (not shown). In some embodiments, the connection to the power source allows for continuous rotation of the support assembly 200 without tangling or damaging the wires 253a, 253b. In some embodiments, as shown in FIG7 , a first wire 253a and a second wire 253b extend along the channel 236 of the support arm 220 to the central base 210. In the central base 210, the first wire 253a connects to a central first connector 254a, while the second wire 253b connects to a central second connector 254b. The central connectors 254a, 254b can be part of a connection plate 258, allowing electrical power or electronic signals to pass through the central connectors 254a, 254b. In the illustrated embodiment, the support assembly 200 can be continuously rotated without tangling or damaging the wires because the wires terminate in the central base 210. A second connection is made on the opposite side of the connection plate 258 (outside the processing chamber).

[0065] In some embodiments, the wires are connected directly to a power source or electrical components outside the processing chamber through channel 236. In such embodiments, the wires have sufficient slack to allow support assembly 200 to be rotated a limited amount without causing the wires to become tangled or damaged. In some embodiments, support assembly 200 rotates less than or equal to 1080°, 990°, 720°, 630°, 360°, or 270° before reversing direction. This allows the heater to be rotated through each station without damaging the wires.

[0066] Referring again to Figures 3-6 , the heater 230 and support surface 231 may include one or more gas outlets to provide backside gas flow. This can facilitate wafer removal from the support surface 231. As shown in Figures 4 and 5 , the support surface 231 includes a plurality of openings 237 and gas channels 238. The openings 237 and / or gas channels 238 may be in fluid communication with one or more of a vacuum source or a gas source (e.g., a purge gas). In such embodiments, a hollow tube may be included to allow fluid communication between the gas source and the openings 237 and / or gas channels 238.

[0067] In some embodiments, heater 230 and / or support surface 231 are configured as an electrostatic chuck. In such embodiments, electrodes 251a, 251b (see FIG. 7 ) may comprise control wires for the electrostatic chuck.

[0068] Some embodiments of the support assembly 200 include a sealing platform 240. The sealing platform has a top surface 241, a bottom surface, and a thickness. The sealing platform 240 can be positioned around the heater 230 to help provide a seal or barrier to minimize gas flow to the area below the support assembly 200.

[0069] 4 , the sealing platform 240 is annular and is positioned around each heater 230. In the illustrated embodiment, the sealing platform 240 is positioned below the heater 230 such that the top surface 241 of the sealing platform 240 is below the support surface 231 of the heater.

[0070] The sealing platform 240 can have many uses. For example, the sealing platform 240 can be used to increase the temperature uniformity of the heater 230 by adding thermal mass. In some embodiments, the sealing platform 240 is integrally formed with the heater 230 (see, for example, FIG. 6 ). In some embodiments, the sealing platform 240 is separate from the heater 230. For example, the embodiment depicted in FIG. 8 has the sealing platform 240 as a separate component connected to the heater spacer 234, such that the top surface 241 of the sealing platform 240 is below the level of the support surface 231 of the heater 230.

[0071] In some embodiments, the sealing platform 240 acts as a holder for the support plate 245. In some embodiments, as shown in FIG5 , the support plate 245 is a single element surrounding all of the heaters 230, with a plurality of openings 242 allowing access to the support surfaces 231 of the heaters 230. The openings 242 allow the heaters 230 to pass through the support plate 245. In some embodiments, the support plate 245 is fixed so that the support plate 245 moves vertically and rotates with the heaters 230.

[0072] In one or more embodiments, support assembly 200 is a drum-shaped element; for example, as shown in FIG. 20 , it is a cylindrical body having a top surface 246 configured to support a plurality of wafers. The top surface 246 of support assembly 200 has a plurality of recesses (pockets 257) sized to support one or more wafers during processing. In some embodiments, pockets 257 have a depth approximately equal to the thickness of the wafer to be processed, such that the top surface of the wafer is substantially coplanar with the top surface 246 of the cylindrical body. An example of such a support assembly 200 can be envisioned as a variation of FIG. 5 without support arms 220. FIG. 20 illustrates a cross-sectional view of an embodiment of support assembly 200 using a cylindrical body. Support assembly 200 includes a plurality of pockets 257 sized to support wafers for processing. In the illustrated embodiment, the bottom of the pockets 257 is the support surface 231 for heater 230. Electrical connections for heater 230 can be routed through support columns 227 and support plate 245. The heaters 230 may be independently powered to control the temperature of the individual pockets 257 and wafers.

[0073] 9 , in some embodiments, the support plate 245 has a top surface 246 that forms a major plane 248 substantially parallel to the major plane 247 formed by the support surface 231 of the heater 230. In some embodiments, the support plate 245 has a top surface 246 that forms the major plane 248 a distance D above the major plane 247 of the support surface 231. In some embodiments, the distance D is substantially equal to the thickness of the wafer 260 to be processed, such that the surface 261 of the wafer 260 is coplanar with the top surface 246 of the support plate 245, as shown in FIG6 . As used herein, the term "substantially coplanar" means that the major plane formed by the surface 261 of the wafer 260 is within ±1 mm, ±0.5 mm, ±0.4 mm, ±0.3 mm, ±0.2 mm, or ±0.1 mm of coplanarity.

[0074] 9 , some embodiments of the present disclosure include a separate component that forms the support surface for processing. Here, the sealing platform 240 is a separate component relative to the heater 230 and is positioned such that the top surface 241 of the sealing platform 240 is below the support surface 231 of the heater 230. The distance between the top surface 241 of the sealing platform 240 and the support surface 231 of the heater 230 is sufficient to allow a support plate 245 to be positioned on the sealing platform 240. The thickness of the support plate 245 and / or the position of the sealing platform 240 can be controlled such that the distance D between the top surface 246 of the support plate 245 is sufficient to ensure that the top surface 261 of the wafer 260 (see FIG. 6 ) is substantially coplanar with the top surface 246 of the support plate 245.

[0075] In some embodiments, as shown in FIG9 , support plate 245 is supported by support columns 227. Support columns 227 can prevent the center of support plate 245 from sagging when a single component platform is used. In some embodiments, sealing platform 240 is not present, and support columns 227 are the primary support for support plate 245.

[0076] The support plate 245 can have various configurations to interact with various configurations of the heater 230 and the sealing platform 240. FIG10A illustrates a top isometric view of the support plate 245 according to one or more embodiments of the present disclosure. FIG10B illustrates a cross-sectional view of the support plate 245 of FIG10A taken along line 10B-10B'. In this embodiment, the support plate 245 is a planar element, wherein the top surface 246 and the bottom surface 249 are substantially flat and / or substantially coplanar. The illustrated embodiment can be particularly useful when the sealing platform 240 is used to support the support plate 245 (as shown in FIG9).

[0077] FIG11A shows a bottom isometric view of another embodiment of a support plate 245 according to one or more embodiments of the present disclosure. FIG11B shows a cross-sectional view of the support plate 245 of FIG11A taken along line 11B-11B'. In this embodiment, each of the openings 242 has a raised ring 270 on the bottom surface 249 of the support plate 245 that surrounds the outer perimeter of the opening 242.

[0078] FIG12A illustrates a bottom isometric view of another embodiment of a support plate 245 according to one or more embodiments of the present disclosure. FIG12B illustrates a cross-sectional view of the support plate 245 of FIG12A taken along line 12B-12B'. In this embodiment, each of the openings 242 has a recessed ring 272 in the bottom surface 249 of the support plate 245 that surrounds the outer perimeter of the opening 242. The recessed ring 272 creates a recessed bottom surface 273. This type of embodiment may be useful when the sealing platform 240 is absent or is coplanar with the support surface 231 of the heater 230. The recessed bottom surface 273 may be positioned on the support surface 231 of the heater 230 such that the bottom portion of the support plate 245 extends below the support surface 231 of the heater 230 and surrounds the sides of the heater 230.

[0079] Some embodiments of the present disclosure are directed to a top plate 300 for a multi-station processing chamber. Referring to Figures 1 and 13, top plate 300 has a top surface 301 and a bottom surface 302 that define the thickness of the lid, and one or more edges 303. Top plate 300 includes at least one opening 310 extending through its thickness. Opening 310 is sized to allow for the addition of gas injectors 112 that can form processing stations 110.

[0080] FIG14 illustrates an exploded view of a processing station 110 according to one or more embodiments of the present disclosure. The illustrated processing station 110 includes three primary components: a top plate 300 (also referred to as a lid), a pumping / purging insert 330, and a gas injector 112. The gas injector 112 shown in FIG14 is a showerhead-type gas injector. In some embodiments, the insert is connected to or in fluid communication with a vacuum (exhaust). In some embodiments, the insert is connected to or in fluid communication with a purge gas source.

[0081] The opening 310 in the top plate 300 can be uniform in size or have varying sizes. Gas injectors 112 of varying sizes / shapes can be used with the pump / purge insert 330, which is appropriately shaped to transition from the opening 310 to the gas injector 112. For example, as illustrated, the pump / purge insert 330 includes a top 331 and a bottom 333, and has sidewalls 335. When inserted into the opening 310 in the top plate 300, a lug 334 adjacent to the bottom 333 can be positioned on a shelf 315 formed in the opening 310. In some embodiments, the shelf 315 is not present in the opening, and a flange portion 337 of the pump / purge insert 330 rests on the top of the top plate 300. In the illustrated embodiment, the lug 334 rests on the shelf 315, with an O-ring 314 positioned between the lug and the shelf to help form an airtight seal.

[0082] In some embodiments, one or more purge rings 309 (see FIG. 13 ) are located within the top plate 300. The purge rings 309 can be in fluid communication with a purge gas chamber (not shown) or a purge gas source (not shown) to provide a positive purge gas flow to prevent process gas leakage from the processing chamber.

[0083] The pumping / purging insert 330 of some embodiments includes a plenum 336 having at least one opening 338 in the bottom 333 of the pumping / purging insert 330. The plenum 336 has an inlet (not shown) generally near the top 331 or sidewall 335 of the pumping / purging insert 330.

[0084] In some embodiments, the plenum 336 may be filled with a purge or inert gas, which may pass through openings 338 in the bottom 333 of the pumping / purge insert 330. The flow of gas through the openings 338 may help create a gas curtain type barrier to prevent process gases from escaping from the interior of the processing chamber.

[0085] In some embodiments, the plenum 336 is connected to or in fluid communication with a vacuum source. In such embodiments, gas flows through an opening 338 in the bottom 333 of the pumping / purging insert 330 into the plenum 336. The gas can be evacuated from the plenum to an exhaust. Such an arrangement can be used to evacuate gas from the processing station 110 during use.

[0086] The pump / purge insert 330 includes an opening 339 into which the gas injector 112 can be inserted. The illustrated gas injector 112 has a flange 342 that can contact the lug 332 near the top 331 of the pump / purge insert 330. The diameter or width of the gas injector 112 can be any suitable size to fit within the opening 339 of the pump / purge insert 330. This allows various types of gas injectors 112 to be used within the same opening 310 in the top plate 300.

[0087] Referring to Figures 2 and 15 , some embodiments of the top plate 300 include a dam 360 extending across the center of the top plate 300. A connector 367 can be used to connect the dam 360 to the top plate 300 near the center. The connector 367 can be used to apply a force normal to the top 331 or bottom 333 of the top plate 300 to compensate for warping in the top plate 300 caused by pressure differentials or the weight of the top plate 300. In some embodiments, the dam 360 and connector 367 can compensate for deflection of up to approximately 1.5 mm at the center of a top plate having a width of approximately 1.5 m and a thickness of up to approximately 100 mm. In some embodiments, a motor 365 or actuator is connected to the connector 367 and can cause a change in the directional force applied to the top plate 300. The motor 365 or actuator can be supported on the dam 360. The dam 360 is shown as contacting the edge of the top plate 300 at two locations. However, one skilled in the art will recognize that there can be one connection location or more than two connection locations.

[0088] In some embodiments, as shown in FIG2 , support assembly 200 includes at least one motor 250. The at least one motor 250 is connected to central base 210 and configured to rotate support assembly 200 about rotation axis 211. In some embodiments, the at least one motor is configured to move central base 210 in a direction along rotation axis 211. For example, in FIG2 , motor 255 is connected to motor 250 and can move support assembly 200 along rotation axis 211. In other words, the illustrated motor 255 can move support assembly 200 along the z-axis, vertically, or orthogonally to the movement caused by motor 250. In some embodiments, as shown, there is a first motor 250 for rotating support assembly 200 about rotation axis 211 and a second motor 255 for moving support assembly 200 along rotation axis 211 (i.e., along the z-axis or vertically).

[0089] 2 and 16 , one or more vacuum and / or purge gas flows can be used to help isolate one processing station 110a from an adjacent processing station 110b. A purge plenum 370 can be in fluid communication with a purge gas port 371 at the outer perimeter of the processing station 110. In the embodiment depicted in FIG16 , the purge plenum 370 and purge gas port 371 are positioned in the top plate 300. A plenum 336 (shown as part of the pumping / purge insert 330) is in fluid communication with an opening 338, which serves as a pumping / purge gas port. The purge gas port 371 and purge plenum 370 (as shown in FIG13 ), along with the vacuum port (opening 338), can extend around the perimeter of the processing station 110 to form a gas curtain. The gas curtain can help minimize or eliminate leakage of process gases into the interior volume 109 of the processing chamber.

[0090] In the embodiment depicted in FIG16 , differential pumping can be used to help isolate the process station 110. A pumping / purging insert 330 is shown in contact with the heater 230 and a support plate 245 having an O-ring 329. The O-rings 329 are positioned on either side of an opening 338 in fluid communication with a plenum 336. One O-ring 329 is positioned within the perimeter of the opening 338, while the other O-ring 329 is positioned outside the perimeter of the opening 338. The combination of the O-rings 329 and the plenum 336 having the opening 338 can provide sufficient differential pressure to maintain a hermetic seal between the process station 110 and the interior volume 109 of the processing chamber 100. In some embodiments, there is one O-ring 329 positioned either within or outside the perimeter of the opening 338. In some embodiments, there are two O-rings 329, one positioned within the perimeter of a purge gas port 371 in fluid communication with the purge plenum 370, while the other O-ring is positioned outside the perimeter. In some embodiments, there is an O-ring 329 positioned within or outside the perimeter of the purge gas port 371 that is in fluid communication with the purge gas chamber 370 .

[0091] The boundary of the processing station 110 can be considered as the area within which the process gases are isolated by the pumping / purging insert 330. In some embodiments, the outer boundary of the processing station 110 is the outermost edge 381 of the opening 338 that is in fluid communication with the plenum 336 of the pumping / purging insert 330, as shown in Figures 14 and 16.

[0092] The number of processing stations 110 can vary with the number of heaters 230 and support arms 220. In some embodiments, there are an equal number of heaters 230, support arms 220, and processing stations 110. In some embodiments, the heaters 230, support arms 220, and processing stations 110 are configured such that each of the support surfaces 231 of the heaters 230 can be simultaneously positioned adjacent to the front face 214 of a different processing station 110. In other words, each of the heaters is simultaneously positioned in a processing station.

[0093] The spacing of the processing stations 110 around the processing chamber 100 can vary. In some embodiments, the processing stations 110 are positioned close enough together to minimize the space between stations so that substrates can be quickly moved between the processing stations 110 while spending a minimal amount of time and travel distance outside of one of the stations. In some embodiments, the processing stations 110 are positioned close enough so that a wafer being transported on the support surface 231 of the heater 230 is always within one of the processing stations 110.

[0094] FIG17 illustrates a processing platform 400 according to one or more embodiments of the present disclosure. The embodiment shown in FIG17 represents only one possible configuration and should not be considered limiting of the scope of the present disclosure. For example, in some embodiments, the processing platform 400 may have a different number of one or more of the following: processing chambers 100, buffer stations 420, and / or robot 430 configurations than the illustrated embodiment.

[0095] The exemplary processing platform 400 includes a central transfer station 410 having a plurality of sides 411, 412, 413, and 414. The transfer station 410 is shown as having a first side 411, a second side 412, a third side 431, and a fourth side 414. While four sides are shown, those skilled in the art will appreciate that the transfer station 410 may have any suitable number of sides, depending on, for example, the overall configuration of the processing platform 400. In some embodiments, there are transfer stations 410 having three, four, five, six, seven, or eight sides.

[0096] Transfer station 410 has a robot 430 positioned therein. Robot 430 can be any suitable robot capable of moving wafers during processing. In some embodiments, robot 430 includes a first arm 431 and a second arm 432. First arm 431 and second arm 432 can move independently of one another. First arm 431 and second arm 432 can move in the xy plane and / or along the z-axis. In some embodiments, robot 430 includes a third arm (not shown) or a fourth arm (not shown). Each of these arms can move independently of the other arms.

[0097] The illustrated embodiment includes six processing chambers 100, with two processing chambers connected to each of the second side 412, third side 413, and fourth side 414 of the central transfer station 410. Each of the processing chambers 100 can be configured to perform a different process.

[0098] The processing platform 400 may also include one or more buffer stations 420 connected to the first side 411 of the central transfer station 410. The buffer stations 420 may perform the same or different functions. For example, a buffer station may hold a cassette of processed wafers that are returned to their original cassette, or one of the buffer stations may hold unprocessed wafers that are moved to another buffer station after processing. In some embodiments, one or more of the buffer stations is configured to pre-treat, pre-heat, or clean the wafers before and / or after processing.

[0099] The processing platform 400 may also include one or more slit valves 418 between the central transfer station 410 and any of the processing chambers 100. The slit valves 418 may be opened and closed to isolate the interior volume within the processing chamber 100 from the environment within the central transfer station 410. For example, if a processing chamber will generate plasma during processing, closing the slit valve for that processing chamber may help prevent stray plasma from damaging a robot in the transfer station.

[0100] The processing platform 400 can be connected to a factory interface 450 to allow wafers or wafer cassettes to be loaded into the processing platform 400. A robot 455 within the factory interface 450 can be used to move wafers or wafer cassettes into and out of the buffer station. Wafers or wafer cassettes can be moved within the processing platform 400 by a robot 430 within the central transfer station 410. In some embodiments, the factory interface 450 is a transfer station for another cluster tool (i.e., another multi-chamber processing platform).

[0101] A controller 495 may be provided and coupled to various components of the processing platform 400 to control their operation. The controller 495 may be a single controller that controls the entire processing platform 400, or multiple controllers that control individual portions of the processing platform 400. For example, the processing platform 400 may include separate controllers for each of the individual processing chambers 100, the central transfer station 410, the factory interface 450, and the robot 430.

[0102] In some embodiments, controller 495 includes a central processing unit (CPU) 496, memory 497, and support circuits 498. Controller 495 may control processing platform 400 directly or through a computer (or controller) associated with a particular process chamber and / or support system components.

[0103] Controller 495 can be any general-purpose computer processor that can be used in an industrial environment to control various chambers and subprocessors. Memory 497 or computer-readable media of controller 495 can be one or more readily accessible memories, such as random access memory (RAM), read-only memory (ROM), a floppy disk, a hard drive, optical storage media (such as a CD or a DVD), a flash drive, or any other form of digital storage (local or remote). Memory 497 can store an instruction set that can be operated by the processor (CPU 496) to control parameters and components of processing platform 400.

[0104] Support circuits 498 are coupled to CPU 496 to support the processor in a conventional manner. These circuits include cache memory, power supplies, clock circuits, input / output circuitry, and subsystems. One or more processes may be stored in memory 498 as software routines that, when executed or invoked by the processor, cause the processor to control the operation of processing platform 400 or individual processing chambers in the manner described herein. Software routines may also be stored and / or executed by a second CPU (not shown) located remotely from the hardware controlled by CPU 496.

[0105] Some or all of the processes and methods of the present disclosure may also be performed in hardware. Thus, a process may be implemented in software and executed in hardware using a computer system, for example, as an application-specific integrated circuit (ASIC) or other type of hardware implementation, or as a combination of software and hardware. The software routine, when executed by a processor, transforms a general-purpose computer into a special-purpose computer (controller) that controls chamber operations to execute the process.

[0106] In some embodiments, the controller 495 has one or more configurations to execute individual processes or sub-processes to perform a method. The controller 495 can be connected to intermediary components and configured to operate these intermediary components to perform the functions of the method. For example, the controller 495 can be connected to one or more gas valves, actuators, motors, slit valves, vacuum controllers, or other components and configured to control these components.

[0107] Figures 18A through 18I illustrate various configurations of a processing chamber 100 with different processing stations 110. Circles with text represent different processing stations 110 and process conditions. For example, in Figure 18A, there are four processing stations 110, each with different text. This indicates four processing stations 110, each with different conditions from the other stations. As indicated by the arrows, processing can occur by moving the heater with the wafer from station A to station D. After exposure to D, the cycle can continue or reverse.

[0108] In FIG18B , two or four wafers can be processed simultaneously, with the wafers moving back and forth between positions A and B on the heater. Two wafers can start at position A, while two wafers start at position B. Independent processing stations 110 allow both stations to be shut down during the first cycle, so that each wafer starts with exposure at position A. The heater and wafers can be rotated continuously, either clockwise or counterclockwise. In some embodiments, the heater and wafer are rotated 90° in a first direction (e.g., A to B) and then 90° in a second direction (e.g., B back to A). This rotation can be repeated to process four wafers / heaters without rotating the support assembly more than approximately 90°.

[0109] 18B may also be useful when processing two wafers in four processing stations 110. This may be particularly useful when one of the processes is at a very different pressure, or when the process times of A and B are very different.

[0110] 18C , three wafers can be processed in an ABC process in a single processing chamber 100. One station can be shut down or perform a different function (e.g., preheat).

[0111] In Figure 18D , two wafers can be processed in an AB-Treat process. For example, only the wafers can be placed on heater B. A clockwise rotation places one wafer in station A and the second wafer in station T. A reverse rotation moves both wafers to station B, while another counterclockwise rotation places the second wafer in station A and the first wafer in station B.

[0112] In Figure 18E, up to four wafers can be processed simultaneously. For example, if station A is configured to perform a CVD or ALD process, four wafers can be processed simultaneously.

[0113] Figures 18F through 18I illustrate a similar type of configuration for a processing chamber 100 having three processing stations 110. In short, in Figure 18F, a single wafer (or more than one wafer) can be subjected to an ABC process. In Figure 18G, two wafers can be subjected to an AB process by placing one wafer in the A position and the other wafer in one of the B positions. The wafers can then be moved back and forth, such that a wafer starting at the B position is first moved to the A position and then back to the same B position. In Figure 18H, the wafers can be subjected to an AB-process. In Figure 18I, three wafers can be processed simultaneously.

[0114] Figures 19A and 19B illustrate another embodiment of the present disclosure. Figure 19A shows a partial view of heater 230 and support plate 245, which have been rotated into position below processing station 110 so that wafer 101 is adjacent to gas injector 112. O-ring 329 on support plate 245 or on the outer portion of heater 230 is in a relaxed state.

[0115] FIG19B shows the support plate 245 and heater 230 after they have been moved toward the processing station 110 such that the support surface 231 of the heater 230 is in contact with, or nearly in contact with, the front face 114 of the gas injector 112 in the processing station 110. In this position, the O-ring 329 is compressed to form a seal around the outer edge of the support plate 245 or the outer portion of the heater 230. This allows the wafer 101 to be moved as close to the gas injector 112 as possible to minimize the volume of the reaction region 219, allowing for rapid cleaning of the reaction region 219.

[0116] Gas that may exit the reaction zone 219 is drawn through opening 338 into the plenum 336 and to an exhaust or foreline (not shown). A purge gas curtain can be generated outside of the opening 338 by a purge plenum 370 and a purge gas port 371. Furthermore, the gap 137 between the heater 230 and the support plate 245 can help further shield the reaction zone 219 and prevent reactant gases from flowing into the interior volume 109 of the processing chamber 100.

[0117] Referring back to FIG. 17 , the controller 495 of some embodiments has one or more configurations selected from the following: a configuration for moving substrates on a robot between a plurality of processing chambers; a configuration for loading substrates and / or unloading substrates from the system; a configuration for opening / closing a slit valve; a configuration for providing power to one or more of the heaters; a configuration for measuring the temperature of the heaters; a configuration for measuring the temperature of a wafer on the heaters; a configuration for loading wafers or unloading wafers from the heaters; a configuration for providing feedback between temperature measurement and heater power control; a configuration for rotating the support assembly about a rotational axis; a configuration for moving the support assembly along the rotational axis (i.e., along the z-axis); a configuration for setting or changing the rotational speed of the support assembly; a configuration for providing a gas flow to a gas injector; a configuration for providing power to one or more electrodes to generate plasma in the gas injector; a configuration for controlling the power supply to the plasma source; a configuration for controlling the frequency and / or power of the power supply to the plasma source; and / or a configuration for providing control of a thermal annealing station.

[0118] Reference anywhere in this specification to "one embodiment," "certain embodiments," "one or more embodiments," or "an embodiment" means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, the appearance of phrases such as "in one or more embodiments," "certain embodiments," "in an embodiment," or "in an embodiment" in various places anywhere in this specification are not necessarily referring to the same embodiment of the present disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0119] Although the disclosure herein has been described with reference to detailed embodiments, it should be understood that these embodiments are merely illustrative of the principles and applications of the disclosure. Those skilled in the art will appreciate that various modifications and variations can be made to the methods and apparatus of the disclosure without departing from the spirit and scope of the disclosure. Therefore, it is intended that the disclosure include modifications and variations within the scope of the appended claims and their equivalents.

[0120] 100: Processing chamber 101: Wafer 102: Shell 104:Wall 106: bottom 109: Internal volume 110: Processing Station 110a: Processing Station 110b: Processing Station 112:Gas syringe 114: Front 137: Gap 200:Support component 210: Rotatable center base 211: Rotation axis 219: reaction area 220: Support arm 221: Inner end 222: Outer end 227: Support column 230: Heater 231: Support surface 234: Heater spacer 236: Channel 237: Opening 238: Gas channel 240: Sealed platform 241: Top 242: Opening 245:Support plate 246: Top 247: Main plane 248: Main plane 249: Bottom 250: Motor 251a: first electrode 251b: second electrode 252a: First connector 252b: Second connector 253a: First wire 253b: Second wire 254a: Center connector 254b: Center connector 255: Motor 257: Bag 258:Connecting plate 260: Wafer 261: Surface 270: protruding ring 272: Concave ring 273: Concave bottom 300: Top plate 301: Top surface 302: Bottom surface 303: Edge 309: Cleaning ring 310: Opening 314:O-ring 315: Shelf 329:O-ring 330: Pumping / cleaning plug-in 331: Top 332: Lug 333: bottom 334: Lug 335: Sidewall 336: Air Chamber 337: flange part 338: Opening 339: Opening 342: flange 360: Dam 365: Motor 367: Connector 370: Cleaning the air chamber 371: Cleaning gas port 381: Outermost edge 400: Processing Platform 410: Central Transfer Station 411: Side 412: Side 413: Side 414: Side 418: Slit Valve 420: Buffer Station 430: Robot 431: First Arm 432: Second Arm 450:Factory Interface 455: Robot 495:Controller 496: Central Processing Unit (CPU) 497:Memory 498: Support Circuit D: Distance

[0121] Domestic storage information (please note the order of storage institution, date, and number) none

[0122] Overseas deposit information (please note the order of deposit country, institution, date, and number) none

Claims

1. A processing chamber comprising: a top plate having a top surface and a bottom surface defining a thickness, the top plate having a plurality of openings; a housing having walls and a bottom, the walls, the bottom surface, and the bottom surface of the top plate defining an internal volume of the processing chamber; a plurality of processing stations in the internal volume of the housing, the processing stations being arranged in a circular configuration about a rotation axis, each processing station including a gas injector having a front end, each processing station including a purge gas chamber and a purge gas port to generate a gas curtain surrounding each of the processing stations; A support assembly within the internal volume of the housing, the support assembly being positioned below the plurality of processing stations, the support assembly including a rotatable central base having a plurality of support arms extending from the central base, each support arm having an inner end and an outer end, the inner end contacting the central base, a heater being positioned on the outer end of each of the support arms, the heater having a support surface configured to support a substrate during processing; and a support plate including a plurality of openings, each of the openings being configured to allow contact with the support surface of the heaters.

2. The processing chamber as claimed in claim 1, wherein the cleaning gas chamber is in fluid communication with the cleaning gas port at an outer boundary of the processing station.

3. The processing chamber as claimed in claim 1, wherein the cleaning gas chamber and the cleaning gas port are located within the thickness of the top plate.

4. The processing chamber as claimed in claim 1, wherein the heater, support arm, and processing station have the same number.

5. The processing chamber as claimed in claim 1, wherein the support arms extend orthogonally to the axis of rotation.

6. The processing chamber as claimed in claim 5, wherein each of the support arms includes a channel extending from the central base, the channel being configured to route wires to electrodes connected to the heater.

7. The processing chamber as claimed in claim 6, wherein each of the heaters includes an electrostatic chuck powered by an electrode extending through the channel in the support arms.

8. The processing chamber as claimed in claim 7, wherein each of the heaters is supported on a heater spacer located at the outer end of the support arm.

9. The processing chamber as claimed in claim 1, wherein the supporting surfaces of the heaters are substantially coplanar.

10. The processing chamber as described in claim 1, further comprising: At least one motor is connected to the central base, and the at least one motor is configured to rotate the support assembly about the rotation axis.

11. The processing chamber as described in claim 1, further comprising: A dam extends beyond a central portion of the roof slab, and the dam is connected to the roof slab near the center using a connector.

12. The processing chamber as claimed in claim 11, wherein the connector is configured to apply a force orthogonal to the top or bottom surface of the top plate to compensate for warping in the top plate.

13. The processing chamber as described in claim 1, further comprising: A controller having one or more configurations selected from the following: a configuration for supplying power to one or more of the heaters; a configuration for measuring a temperature of the heaters; a configuration for rotating the support assembly about the rotation axis; a configuration for moving the support assembly about a rotation axis; a configuration for setting or changing a rotational speed of the support assembly; a configuration for supplying a gas flow to a processing station; or a configuration for supplying power to the one or more heaters.

14. A processing platform comprising: a central transfer station having a robot positioned therein; and at least one processing chamber as described in claim 1 connected to one side of the central transfer station.

15. The processing platform as described in claim 14, wherein there are four processing stations connected to the central transfer station.

16. The processing platform as described in claim 14, wherein there are 6 processing stations connected to the central transfer station.

17. The processing platform as described in claim 14 further includes: A slit valve is provided between the central transfer station and each of the processing chambers, the slit valve being configured to open and close to isolate the internal volume of the processing chamber from the environment within the central transfer station.

18. The processing platform as described in claim 14, further comprising: A factory interface is connected to the central transfer station, and the factory interface is configured to allow wafers or wafer cassettes to be loaded into the processing platform.

19. The processing platform as described in claim 18, further comprising: A controller is coupled to one or more of the processing chambers, to the plant interface, or to the robot in the central transfer station.

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