Semiconductor devices, methods of manufacturing thereof, and insulating and rewiring layers

Abstract

The present invention provides a semiconductor device that can achieve all of the following: the formation of fine vias in the insulating layer, the absence of insulation defects, and the assurance of tightness between the insulating layer and the wiring after reliability testing; the semiconductor device can improve the chemical resistance of the insulating layer and ensure tightness between the insulating layer and the wiring after thermal testing. The semiconductor device 1 of the present invention comprises: a semiconductor wafer 2; a sealing material 3 that covers the semiconductor wafer 2 in such a way that at least a portion of the semiconductor wafer 2 is exposed; and a redistribution layer 4 disposed on the side of the semiconductor wafer 2 not covered by the sealing material 3, and having an area larger than the semiconductor wafer 2 when viewed from above; and the redistribution layer 4 includes: wiring 5 that is electrically connected to the semiconductor wafer 2; and an insulating layer 6 having an oxygen permeability of 150~7000 cm3 / m2. day. atm.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a method for manufacturing the same. Prior Art

[0002] There are various methods for semiconductor packaging in semiconductor devices. For example, one method involves covering a portion of a semiconductor wafer with a sealant and forming a redistribution layer electrically connected to the semiconductor wafer on the surface of the semiconductor wafer not covered by the sealant. Among semiconductor packaging methods, the fan-out method has become mainstream in recent years.

[0003] In a fan-out semiconductor package, a protective layer is formed on a specific side of a semiconductor wafer, and an encapsulant is placed on the other side of the semiconductor wafer, thereby forming a wafer seal larger than the semiconductor wafer. Furthermore, a redistribution layer is formed over the entire area of ​​the protective layer and the encapsulant. This redistribution layer is formed with a relatively thin film thickness. Since the redistribution layer can be formed over the entire area of ​​the encapsulant, a larger number of external connection terminals can be maintained within the semiconductor package. For example, a known fan-out semiconductor device is described in Patent Document 1. [Prior Art Literature] [Patent Document]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-129767 Summary of the Invention

[0005] [Problems to be solved by the invention]

[0006] The redistribution layer in fan-out semiconductor devices includes an insulating layer. In this case, the wiring electrically connected to the semiconductor chip is often covered by this insulating layer. Furthermore, with the recent trend toward finer wiring, it is necessary to form even finer vias in the insulating layer.

[0007] Furthermore, the present inventors focused on the following point: the insulation layer after wiring formation must not cause insulation failure even under harsh conditions such as reliability testing, and must ensure high adhesion between the insulation layer and the wiring. However, in previous semiconductor devices (fan-out semiconductor devices), such as the device described in Patent Document 1, adhesion between the insulation layer and the wiring in the redistribution layer after reliability testing is insufficient.

[0008] The present invention is made in view of this aspect, and its purpose is to provide a semiconductor device and its manufacturing method, etc., which can achieve all of the following: fine guide holes can be formed in the insulating layer, insulation defects will not occur, and the close contact between the insulating layer and the wiring can be ensured after the reliability test. [Technical means to solve the problem]

[0009] One aspect of the present invention is as follows. [1] A semiconductor device comprising: semiconductor wafers; a sealing material covering the semiconductor wafer in a manner such that at least a portion of the semiconductor wafer is exposed; and A redistribution layer is disposed on the surface of the semiconductor chip not covered by the sealing material and has an area larger than the semiconductor chip when viewed from above; and The redistribution layer includes: wiring electrically connected to the semiconductor chip; and an insulating layer having an oxygen permeability of 150 to 7000 cm 3 / m 2·day·atm. [2] The semiconductor device as described in item 1, wherein the insulating layer has a layer structure of three or more layers. [3] The semiconductor device as described in item 1, wherein the semiconductor chip comprises a plurality of chips. [4] The semiconductor device as described in item 1, wherein the sealing material is in contact with the insulating layer. [5] The semiconductor device as described in item 1, wherein the sealing material comprises epoxy resin. [6] The semiconductor device as described in item 1, wherein the oxygen permeability is 250-5000 cm 3 / m 2·day·atm. [7] The semiconductor device as described in item 1, wherein the oxygen permeability is 150-400 cm 3 / m 2·day·atm. [8] The semiconductor device as described in item 1, wherein the oxygen permeability is 150-350 cm 3 / m 2·day·atm. [9] The semiconductor device as described in item 1, wherein the oxygen permeability is 150-300 cm 3 / m 2·day·atm.

[10] The semiconductor device as described in item 1, wherein the oxygen permeability is 400-7000 cm 3 / m 2·day·atm.

[11] The semiconductor device as described in item 1, wherein the oxygen permeability is 450-7000 cm 3 / m 2·day·atm.

[12] The semiconductor device as described in item 1, wherein the oxygen permeability is 500-7000 cm 3 / m 2·day·atm.

[13] The semiconductor device as described in item 1, wherein the insulating layer comprises at least one selected from the group consisting of carbon (C), hydrogen (H), nitrogen (N), oxygen (O), silicon (Si), and titanium (Ti).

[14] The semiconductor device as described in item 1, wherein the insulating layer does not contain halogen.

[15] The semiconductor device as described in item 1, wherein the insulating layer comprises at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[16] The semiconductor device as described in item 1, wherein the insulating layer comprises polyimide, and the peak ratio of the peak height near 1380 cm-1 to the peak height near 1500 cm-1 (peak height near 1380 cm-1 / peak height near 1500 cm-1) when measuring IR (Infrared Radiation) spectroscopy by total reflectance measurement (ATR) is 0.2-2.5.

[17] The semiconductor device as described in item 1, wherein the semiconductor device optionally includes a protective layer for protecting the semiconductor wafer, and When the semiconductor device is provided with the protective layer, the protective layer is arranged between the semiconductor chip and the insulating layer.

[18] The semiconductor device as described in item 17, wherein the protective layer is in contact with at least one of the semiconductor chip and the insulating layer.

[19] The semiconductor device as described in item 17, wherein a hole is formed in the protective layer, and The semiconductor chip is electrically connected to the wiring electrically connected to the semiconductor chip through the hole.

[20] In the semiconductor device as described in item 19, the ratio of the opening area of ​​the surface of the protective layer on the semiconductor wafer side due to the hole is less than half. [twenty one] The semiconductor device as described in item 17, wherein the protective layer comprises at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. [twenty two] The semiconductor device as described in item 17, wherein the protective layer comprises polyimide, and the peak ratio of the peak height near 1380 cm-1 to the peak height near 1500 cm-1 (peak height near 1380 cm-1 / peak height near 1500 cm-1) when measured by IR spectroscopy using total reflectance (ATR) is 1.2-2.5. [twenty three] The semiconductor device as described in item 17, wherein at least one of the protective layer and the insulating layer comprises a polyimide having a structure of the following general formula (1), [Chemistry 1] (wherein, X 1 is a tetravalent organic group derived from tetracarboxylic dianhydride, Y 1 is a divalent organic group derived from diamine, and m is an integer greater than or equal to 1). [twenty four] The semiconductor device as described in item 23, wherein X1 in the above general formula (1) is a tetravalent organic group containing an aromatic ring, and In the above general formula (1), Y 1 is a divalent organic group containing an aromatic ring.

[25] The semiconductor device as described in item 23, wherein X1 in the above general formula (1) comprises at least one structure represented by the following general formulas (2) to (5), [Chemistry 2] [Chemistry 3] [Chemistry 4] (wherein R 9 is an oxygen atom, a sulfur atom or a divalent organic group) [Chemistry 5] .

[26] The semiconductor device as described in item 25, wherein X1 in the above general formula (1) comprises a structure represented by the following general formula (6), [Chemistry 6] .

[27] The semiconductor device as described in item 23, wherein Y1 in the above general formula (1) comprises at least one structure represented by the following general formulas (7) to (9), [Chemistry 7] (wherein, R10, R11, R12, and R13 are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different.) [Chemistry 8] (In the formula, R14 to R21 are each independently a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different.) [Chemistry 9] (wherein, R22 is a divalent group or an oxygen atom, R23-R30 are each independently a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different from each other; k is an integer of 1 to 3, and when k is 2 or 3, R22, R23, R24, R27, and R28 may be the same or different from each other).

[28] The semiconductor device as described in item 23, wherein Y1 in the above formula (1) comprises a structure represented by the following general formula (10), [Chemistry 10] .

[29] The semiconductor device as described in item 15, wherein the insulating layer comprises the polybenzoxazole having a structure represented by the following general formula (11): [Chemistry 11] (wherein, U and V are each independently a divalent organic group).

[30] The semiconductor device as described in item 29, wherein U in the above general formula (11) is a divalent organic group having 1 to 30 carbon atoms.

[31] The semiconductor device as described in item 29, wherein U in the above general formula (11) is a chain alkylene group having 1 to 8 carbon atoms and in which part or all of the hydrogen atoms are substituted by fluorine atoms.

[32] The semiconductor device as described in item 29, wherein V in the general formula (11) is a divalent organic group having 1 to 40 carbon atoms.

[33] The semiconductor device as described in item 29, wherein V in the general formula (11) is a divalent chain aliphatic group having 1 to 20 carbon atoms.

[34] The semiconductor device as described in item 29, wherein V in the general formula (11) is a divalent organic group containing an aromatic group.

[35] The semiconductor device as described in item 29, wherein V in the general formula (11) comprises at least one structure represented by the following general formulas (7) to (9), [Chemistry 12] (In the formula, R10, R11, R12, and R13 are each independently a hydrogen atom or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different) [Chemistry 13] (In the formula, R14 to R21 are each independently a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be the same or different) [Chemistry 14] (wherein, R22 is a divalent group or an oxygen atom, R23 to R30 are each independently a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same as or different from each other; k is an integer of 1 to 3, and when k is 2 or 3, R22, R23, R24, R27, and R28 may be the same as or different from each other).

[36] The semiconductor device as described in item 29, wherein V in the above general formula (11) includes a structure represented by the following general formula (10), [Chemistry 15] .

[37] The semiconductor device as described in item 15, wherein the polymer having phenolic hydroxyl groups comprises a novolac-type phenol resin.

[38] The semiconductor device as described in item 15, wherein the polymer having a phenolic hydroxyl group comprises a phenol resin without an unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group.

[39] The semiconductor device as described in item 1, wherein the insulating layer includes a first insulating layer and a second insulating layer having a composition different from that of the first insulating layer.

[40] A semiconductor device as described in any one of items 1 to 39, wherein the semiconductor device is a fan-out wafer-level chip scale package semiconductor device.

[41] A method for manufacturing a semiconductor device comprises the following steps: The first step is to prepare a semiconductor wafer; A second step is to cover the prepared semiconductor wafer with a sealing material in such a manner that at least a portion of the semiconductor wafer is exposed; and The third step is to form a redistribution layer on the exposed surface of the semiconductor chip, the redistribution layer having an area larger than that of the semiconductor chip when viewed from above; and The redistribution layer includes an insulating layer having an oxygen permeability of 150 to 7000 cm 3 / m 2·day·atm.

[42] The method for manufacturing a semiconductor device as described in item 41, wherein the insulating layer is formed using a photosensitive resin composition capable of forming at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[43] The method for manufacturing a semiconductor device as described in item 41 or 42, wherein the second step comprises the following steps: forming a protective layer on the semiconductor wafer; and The semiconductor wafer having the protective layer formed thereon is covered with a sealing material in such a manner that at least a portion of the protective layer is exposed; and The above-mentioned step 3 includes the following steps: The redistribution layer is formed on the protective layer side.

[44] The method for manufacturing a semiconductor device as described in item 43, wherein the protective layer is formed using a photosensitive resin composition capable of forming at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[45] An insulating layer is used to form a redistribution layer in a semiconductor device. The semiconductor device comprises: semiconductor wafers; a sealing material covering the semiconductor wafer in a manner such that at least a portion of the semiconductor wafer is exposed; and A redistribution layer is disposed on the surface of the semiconductor chip not covered by the sealing material and has an area larger than the semiconductor chip when viewed from above; and The oxygen permeability of the insulating layer is 150~7000 cm3 / m2·day·atm.

[46] A redistribution layer is disposed in a semiconductor chip. The semiconductor chip comprises: semiconductor chips; and a sealing material covering the semiconductor wafer so as to expose at least a portion of the semiconductor wafer; the redistribution layer being disposed on a surface of the semiconductor wafer not covered by the sealing material and having an area larger than the semiconductor wafer when viewed from above; The redistribution layer includes: wiring, which is electrically connected to the semiconductor chip; and The insulating layer is in contact with the wiring and has an oxygen permeability of 150 to 7000 cm3 / m2·day·atm. [Effects of the Invention]

[0010] According to the present invention, a semiconductor device and a method for manufacturing the same can be provided, wherein the semiconductor device can achieve all of the following: fine guide holes can be formed in an insulating layer, insulation defects will not occur, and the adhesion between the insulating layer and the wiring can be ensured after reliability testing. Furthermore, according to the present invention, an insulating layer and a redistribution layer capable of realizing the above-mentioned semiconductor device can be provided. Simple diagram description

[0011] FIG1 is a schematic cross-sectional view showing a configuration example of a semiconductor device according to this embodiment. FIG2 is a schematic top view showing a configuration example of a semiconductor device according to this embodiment. 3A to 3H illustrate an example of manufacturing steps of the semiconductor device according to this embodiment. Implementation Method

[0012] The following describes an embodiment of the present invention (hereinafter referred to as the "present embodiment") with reference to the drawings. The present invention is not limited to the following embodiment and can be implemented with various modifications within the scope of its main purpose. In this specification, the upper or lower limit values ​​of numerical ranges listed in stages may be replaced with the upper or lower limit values ​​of other numerical ranges listed in stages, or with the corresponding values ​​in the examples. For greater clarity, the scales, shapes, and lengths shown in the drawings may sometimes be exaggerated.

[0013] [Implementation Method 1] <<Semiconductor Devices>> FIG1 is a schematic cross-sectional view showing an example of the structure of a semiconductor device 1, and FIG2 is a schematic top view showing an example of the structure of the semiconductor device 1. As shown in the figure, the semiconductor device (semiconductor IC (Integrated Circuit)) 1 includes: Semiconductor wafer 2; a sealing material covering the semiconductor chip 2 in such a manner that at least a portion of the semiconductor chip 2 is exposed; and The redistribution layer 4 is disposed on the side of the semiconductor chip 2 that is not covered by the sealing material and has an area larger than the semiconductor chip 2 when viewed from above; and The redistribution layer 4 includes: wiring 5, which is electrically connected to the semiconductor chip 2; and an insulating layer (hereinafter sometimes referred to as "interlayer insulating film") 6, whose oxygen permeability is 150~7000 cm3 / m2·day·atm.

[0014] Semiconductor wafer 2 may include multiple semiconductor wafers (wafers 2a). In Figure 1, multiple wafers 2a are arranged side by side along the plane direction (a direction perpendicular to direction A in Figure 1). Semiconductor wafer 2 includes a semiconductor such as silicon and has circuits formed therein. When semiconductor wafer 2 includes multiple wafers 2a, the configuration of each wafer 2a may be the same or different.

[0015] The redistribution layer 4 is formed larger than the semiconductor chip 2 in a top view (viewed in the direction of arrow A in FIG1 ). That is, the semiconductor device 1 of this embodiment is a fan-out wafer-level chip scale package (WLCSP) type semiconductor device.

[0016] [Rewiring layer] The redistribution layer 4 comprises wirings 5 ​​and an insulating layer 6. Specifically, the redistribution layer 4 comprises a plurality of wirings 5 ​​electrically connected to a plurality of terminals 2a provided on the semiconductor chip 2, and an insulating layer 6 embedded between the wirings 5. The terminals 2a are electrically connected to the wirings 5. One end of the wiring 5 is connected to the terminal 2a, and the other end is connected to the external connection terminal 7. The wiring 5 between the terminal 2a and the external connection terminal 7 is covered by the insulating layer 6.

[0017] The insulating layer 6 in the redistribution layer 4 has a layer structure of three or more layers. This makes it easier to ensure the flatness of each insulating layer and, consequently, the resulting redistribution layer 4. The insulating layer 6 in the redistribution layer 4 may have nine or fewer layers. Here, the "rewiring layer" in this embodiment does not include a printed wiring board.

[0018] The thickness of the redistribution layer 4 is approximately 3 to 30 μm. The thickness of the redistribution layer 4 may be 1 μm or greater, 5 μm or greater, or 10 μm or greater. Alternatively, the thickness of the redistribution layer 4 may be 40 μm or less, 30 μm or less, or 20 μm or less.

[0019] FIG2 shows the semiconductor device 1 in a top view (viewed in the direction of arrow A in FIG1 ), but the sealing material 3 is not shown. Semiconductor device 1 is configured such that, when viewed from above, area S1 of the redistribution layer 4 is larger than area S2 of semiconductor chip 2. To increase the number of external connection terminals, area S1 of the redistribution layer 4 is preferably at least 1.05 times, more preferably at least 1.1 times, more preferably at least 1.2 times, and even more preferably at least 1.3 times, the area S2 of the semiconductor chip 2. Furthermore, area S1 of the redistribution layer 4 may be no greater than 50 times, no greater than 25 times, no greater than 10 times, or no greater than 5 times the area S2 of the semiconductor chip 2. Furthermore, the area of ​​the portion of the redistribution layer 4 that overlaps with the semiconductor chip 2 when viewed from above is also included in area S1 of the redistribution layer 4.

[0020] The semiconductor chip 2 and the redistribution layer 4 may have the same or different shapes. In FIG2 , the semiconductor chip 2 and the redistribution layer 4 are both rectangular in shape, but the shapes may be other than rectangular.

[0021] (Insulation layer and wiring) From the perspective of preventing unintended conduction with the wiring 5, the insulating layer 6 is preferably a member with high insulation. The wiring 5 can be a member with high conductivity, and copper is generally used.

[0022] The oxygen permeability of the insulating layer 6 is 150-7000 cm 3 / m 2·day·atm. The oxygen permeability can be measured by the method described in the following examples. In this embodiment, as long as the oxygen permeability is within the above range, all of the following can be achieved: fine vias can be formed in the insulation layer, insulation defects can be prevented, and adhesion between the insulation layer and wiring can be ensured after reliability testing. While the reasons for this are not clear, the present inventors believe the following. Reliability testing is conducted at high temperatures and high humidity, for example, at 130°C and 85% relative humidity (RH). During this time, moisture and oxygen atoms penetrate the insulating layer, causing the wiring to oxidize and eventually corrode. Consequently, voltage application and migration can lead to dendrite formation, causing short circuits (insulation failure). Furthermore, when copper wiring is used, copper ions diffuse into the insulating layer during reliability testing, creating gaps between the copper wiring and the insulating layer, resulting in reduced adhesion. Furthermore, in this case, it is difficult to form fine guide holes (to obtain good developability). Therefore, by controlling the oxygen permeability (cm³ / m²·day·atm) to 7000 cm³ / m²·day·atm or less, the permeation of moisture and oxygen can be suppressed, thereby preventing the aforementioned phenomenon. The oxygen permeability is preferably 6500 or less, more preferably 6000 or less, and even more preferably 5500 or less.

[0023] On the other hand, if the oxygen permeability is too low, the exposure light has low transmittance through the photosensitive resin composition. Consequently, when forming vias, i.e., irradiating the coating film of the composition with exposure light, the light tends to not fully reach the bottom of the coating film. Therefore, by setting the oxygen permeability (cm³ / m²·day·atm) to 150 or higher, good developability and, consequently, good resolution can be achieved. The oxygen permeability (cm³ / m²·day·atm) is preferably 200 or higher, more preferably 250 or higher, even more preferably 300 or higher, and even more preferably 350 or higher. The oxygen permeability of this embodiment can be appropriately selected based on the configuration of the semiconductor device in which it is used. For example, in semiconductor devices with stringent reliability requirements, it is preferable to use an insulating layer with a lower oxygen permeability. In this case, the oxygen permeability (cm³ / m²·day·atm) of the insulating layer is preferably 150-450, more preferably 150-400, even more preferably 150-350, and even more preferably 150-300. Furthermore, for semiconductor devices with stringent resolution requirements, it is preferable to use an insulating layer with a high oxygen permeability. In such cases, the oxygen permeability (cm³ / m²·day·atm) of the insulating layer is preferably 350-7000, more preferably 400-7000, even more preferably 450-7000, and even more preferably 500-7000.

[0024] Oxygen permeability can be designed within the above range by selecting the polymer structure contained in the insulating layer and / or the amount and type of additives added to the insulating layer. For example, methods for increasing oxygen permeability include introducing compounds with large free volume into the polymer structure and then introducing these compounds as additives into the insulating layer. For example, in the case of polyimide, fluorine-based monomers (fluorine-containing dianhydrides and / or diamines) can be selected as raw material monomers. Alternatively, dianhydrides and / or diamines with a fluorene skeleton can be used as raw material monomers. As a method for reducing oxygen permeability, the following method can be cited: the insulating layer is formed using a plasticizer (e.g., dicyclohexyl phthalate, diphenyl phthalate, dicyclohexyl di-2-ethylhexyl trimellitate, dicyclohexyl pyromellitate, dicyclohexyl adipate) that volatilizes during the curing of the coating film of the composition and promotes the filling of polymers in the insulating layer.

[0025] The Young's modulus of the insulating layer 6 is preferably 5.0 GPa or less, more preferably 4.5 GPa or less, and particularly preferably 4.1 GPa or less, or 4.0 GPa or less, from the perspective of developing properties. Furthermore, from the perspective of protecting wiring, it is preferably 2.0 GPa or more, more preferably 2.5 GPa or more, and particularly preferably 3.0 GPa or more, or 3.2 GPa or more.

[0026] As described above, the insulating layer 6 in the redistribution layer 4 can be composed of multiple layers. For example, when observing a cross-section of the redistribution layer 4, the redistribution layer 4 may include: a first insulating layer; a second insulating layer; and an intermediate layer, different from the first and second insulating layers, disposed between the first and second insulating layers. The intermediate layer may be, for example, the wiring 5.

[0027] The first and second insulating layers can have the same or different compositions, Young's moduli, and film thicknesses. Having different compositions than the first and second insulating layers allows each insulating layer to have different properties. In one embodiment, insulating layer 6 includes a first insulating layer and a second insulating layer having a different composition than the first insulating layer.

[0028] The insulating layer 6 preferably includes at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[0029] The resin composition used to form the insulating layer 6 can be any photosensitive resin composition. For example, it is preferably a photosensitive resin composition comprising at least one selected from the group consisting of a polyimide precursor, a polybenzoxazole precursor, and a polymer having a phenolic hydroxyl group. The photosensitive resin composition can be either negative-working or positive-working. Furthermore, the resin composition used to form the insulating layer 6 can be in either a liquid or film form.

[0030] In this embodiment, the pattern formed after exposing and developing the photosensitive resin composition is referred to as a "relief pattern," and the pattern formed by heat-curing (hardening) the relief pattern is referred to as a "hardened relief pattern." The hardened relief pattern constitutes the protective layer 8 and the insulating layer 6. In this embodiment, the insulating layer preferably includes at least one selected from the group consisting of carbon (C), hydrogen (H), nitrogen (N), oxygen (O), silicon (Si), and titanium (Ti). This facilitates the effects of this embodiment. Here, the insulating layer 6 of this embodiment does not contain halogen. By not introducing functional groups with large free volumes such as halogen, it is easy to suppress the reduction of the chemical resistance of the insulating layer 6.

[0031] (Sealing material) The sealing material 3 covers the surface (side surface and top surface) of the semiconductor wafer 2 and is formed to have an area larger than the semiconductor wafer 2 when viewed from above (viewed in the direction of arrow A in FIG. 1 ).

[0032] From the perspectives of heat resistance and adhesion to the insulating layer 6, the sealing material 3 preferably comprises an epoxy resin. Furthermore, the sealing material 3 preferably contacts the semiconductor wafer 2 and the redistribution layer 4. The sealing material 3 particularly preferably contacts the insulating layer 6 within the redistribution layer 4. This effectively and easily enhances the sealing performance between the semiconductor wafer 2 and the redistribution layer 4.

[0033] The sealing material 3 can be a single layer or multiple layers. When the sealing material 3 is multiple layers, the materials of the multiple layers can be the same material or different materials.

[0034] (Protective layer) Protective layer 8 protects semiconductor wafer 2. To protect semiconductor wafer 2 from physical impact, the Young's modulus of protective layer 8 is preferably 4.0 GPa or higher, more preferably 4.5 GPa or higher, and even more preferably 5 GPa or higher. When the protective layer is composed of a photosensitive resin composition, the Young's modulus of protective layer 8 is preferably 9.0 GPa or lower, more preferably 8.5 GPa or lower, and even more preferably 8.0 GPa or lower, to ensure developability. The Young's modulus can be calculated using tensile testing, nanoindentation testing, and other methods.

[0035] Protective layer 8 is provided on the surface of semiconductor wafer 2 not covered by sealant 3. When semiconductor wafer 2 is viewed from the side covered by sealant 3 (in the direction of arrow A in FIG1 ), this is the back side of semiconductor wafer 2 and, therefore, protective layer 8 is not visible.

[0036] Protective layer 8 is in contact with at least one of semiconductor wafer 2 and insulating layer 6. This facilitates the proper protection of semiconductor wafer 2. Furthermore, this configuration facilitates improved adhesion between protective layer 8 and insulating layer 6. When semiconductor device 1 has this configuration, improved adhesion between protective layer 8 and insulating layer 6 can also be achieved. In particular, in semiconductor device 1, a configuration in which protective layer 8 is in contact with both semiconductor wafer 2 and insulating layer 6 is a more preferred configuration from the aforementioned perspective. Although omitted in the semiconductor device 1 , other components may be interposed between the semiconductor chip 2 and the insulating layer 6 as long as the effects of this embodiment can be obtained.

[0037] Holes 8a are formed in protective layer 8, through which the semiconductor chip 2 and the wiring 5 are electrically connected. This ensures electrical connection between the semiconductor chip 2 and the wiring 5, and further facilitates protection of the semiconductor chip 2. Holes 8a are provided in protective layer 8 in a plurality of locations corresponding to the terminals 2a of the semiconductor chip 2, and the terminals 2a are inserted into each of the plurality of holes 8a.

[0038] In semiconductor device 1, the ratio of the opening area of ​​protective layer 8 on the semiconductor wafer 2 side due to aperture 8a is less than half. This ensures sufficient protection area for semiconductor wafer 2, making it easier to protect semiconductor wafer 2. Here, "opening area" refers to the total area of ​​the opening entrances on the semiconductor wafer 2 side.

[0039] The protective layer preferably includes, for example, at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[0040] The resin composition used to form protective layer 8 can be any photosensitive resin composition. For example, it is preferably a photosensitive resin composition comprising at least one selected from the group consisting of a polyimide precursor, a polymer having a polyimide moiety and a polyimide precursor moiety in its polymer structure, a solvent-soluble polyimide, a polybenzoxazole precursor, and a polymer having a phenolic hydroxyl group. The photosensitive resin composition can be either negative-working or positive-working. Furthermore, the resin composition used to form protective layer 8 can be in either liquid or film form.

[0041] <Polyimide Precursor> (A) Photosensitive resin As the photosensitive resin (A) used in the preparation of the polyimide precursor, polyamide, polyamic acid ester, etc. can be mentioned. As the polyamic acid ester, the following general formula (12) can be used: [Chemistry 16] (wherein, R1 and R2 are each independently a hydrogen atom, a saturated aliphatic group having 1 to 30 carbon atoms, an aromatic group, a monovalent organic group having a carbon-carbon unsaturated double bond, or a monovalent ion having a carbon-carbon unsaturated double bond; X1 is a tetravalent organic group derived from tetracarboxylic dianhydride; Y1 is a divalent organic group derived from a diamine; and m is an integer greater than or equal to 1) wherein m is preferably 2 or more, and more preferably 5 or more.

[0042] In the above formula (12), when R 1 and R 2 are present as monovalent cations, O is negatively charged, that is, present as -O-. X 1 and Y 1 may include a hydroxyl group. R 1 and R 2 are more preferably the following general formula (13): [Chemistry 17] (wherein, R3, R4 and R5 are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m1 is an integer from 1 to 20) The monovalent organic group represented by is more preferably the following general formula (14): [Chemistry 18] (wherein, R6, R7 and R8 are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m2 is an integer from 1 to 20) The structure represented has an ammonium ion at the terminal of the monovalent organic group.

[0043] The polyamic acid ester represented by the general formula (12) may be mixed with a plurality of types. Alternatively, a polyamic acid ester obtained by copolymerizing the polyamic acid esters represented by the general formula (12) may be used.

[0044] From the perspective of Young's modulus and chemical resistance, X1 is preferably a tetravalent organic group containing an aromatic group. Specifically, X1 is preferably a tetravalent organic group containing at least one structure represented by the following general formula (2) to general formula (5): [Chemistry 19] [Chemistry 20] [Chemistry 21] (wherein R 9 is an oxygen atom, a sulfur atom or a divalent organic group) [Chemistry 22] .

[0045] In the general formula (4), R 9 may be, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom. In addition, R 9 may include a hydroxyl group.

[0046] From the viewpoint of developability, X1 in the general formula (1) is preferably a tetravalent organic group having a structure represented by the following general formula (6): [Chemistry 23] .

[0047] From the perspective of Young's modulus and chemical resistance, Y1 is preferably a divalent organic group containing an aromatic group. Specifically, Y1 is preferably a divalent organic group containing at least one structure represented by the following general formula (7) to general formula (9): [Chemistry 24] (wherein, R10, R11, R12, and R13 are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different.) [Chemistry 25] (In the formula, R14 to R21 are each independently a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different.) [Chemistry 26] (wherein, R22 is a divalent organic group or an oxygen atom, R23 to R30 are each independently a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different from each other; k is an integer of 1 to 3, and when k is 2 or 3, R22, R23, R24, R27, and R28 may be the same or different from each other).

[0048] R 22 in the general formula (9) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

[0049] From the viewpoint of developability, Y 1 is particularly preferably a divalent organic group having a structure represented by the following general formula (10): [Chemistry 27] .

[0050] In the above polyamic acid ester, X 1 in the repeating unit is derived from tetracarboxylic dianhydride used as a raw material, and Y 1 is derived from diamine used as a raw material.

[0051] Examples of the tetracarboxylic dianhydride used as a raw material include pyromellitic dianhydride (PMDA), diphenyl ether-3,3',4,4'-tetracarboxylic dianhydride (4,4'-oxydiphthalic dianhydride: ODPA), benzophenone-3,3',4,4'-tetracarboxylic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA), diphenylsulfonium-3,3',4,4'-tetracarboxylic dianhydride, diphenylmethane-3,3',4,4'-tetracarboxylic dianhydride, 2,2-bis(3,4-phthalic anhydride)propane, 4,4'-(hexafluoroisopropylidene)diphthalic dianhydride (6FDA), and 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic dianhydride (BPADA). These may be used alone or in combination of two or more.

[0052] Examples of the diamine used as a raw material include p-phenylenediamine (PPD), m-phenylenediamine, 4,4'-diaminodiphenyl ether (DADPE), 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diamino-2,2'-dimethylbiphenyl (m-TB), 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfonium, Bis[4-(3-aminophenoxy)phenyl]sulfonium, 4,4-bis(4-aminophenoxy)biphenyl, 4,4-bis(3-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 9,10-bis(4-aminophenyl)anthracene, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis[4-( 4-Aminophenoxy)phenyl)propane, 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 1,4-bis(3-aminopropyldimethylsilyl)benzene, o-tolidinesulfonium, 9,9-bis(4-aminophenyl)fluorene, 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl (TFMB), 2,2-bis[4-(4-aminophenoxy)phenyl]propane (BAPP), 2,2-bis[4-(4-aminophenoxy)phenyl]propane (MBAPP), etc. Some of the hydrogen atoms on the benzene ring of these may be substituted. These may be used alone or in combination of two or more.

[0053] By using 4,4'-(hexafluoroisopropylidene)diphthalic dianhydride, fluorinated dianhydride, or the like as the acid anhydride, there is a tendency to increase the oxygen permeability in the insulating layer. By using 9,9-bis(4-aminophenyl)fluorene (BAFL) or 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane as the diamine, the oxygen permeability in the insulating layer tends to be increased.

[0054] In the synthesis of polyamic acid ester (A), the following method is generally preferably used: a tetracarboxylic acid diester obtained by the esterification reaction of tetracarboxylic dianhydride is directly subjected to a condensation reaction with a diamine.

[0055] The alcohol used in the esterification reaction of tetracarboxylic dianhydride is an alcohol having an olefinic double bond. Specific examples include 2-hydroxyethyl methacrylate, 2-methacryloyloxyethanol, glycerol diacrylate, and glycerol dimethacrylate. These alcohols may be used alone or in combination of two or more.

[0056] Regarding the specific synthesis method of the polyamic acid ester (A), a previously known method can be employed. For example, the method disclosed in the specification of International Publication No. 00 / 43439 can be cited. Specifically, a method can be cited in which a tetracarboxylic acid diester is converted into a tetracarboxylic acid diester diacylate chloride, and the tetracarboxylic acid diester diacylate chloride is subjected to a condensation reaction with a diamine in the presence of a basic compound to produce the polyamic acid ester. Alternatively, a method can be cited in which a tetracarboxylic acid diester and a diamine are subjected to a condensation reaction in the presence of an organic dehydrating agent to produce the polyamic acid ester.

[0057] Examples of organic dehydrating agents include dicyclohexylcarbodiimide (DCC), diethylcarbodiimide, diisopropylcarbodiimide, ethylcyclohexylcarbodiimide, diphenylcarbodiimide, 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide, and 1-cyclohexyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride.

[0058] The weight average molecular weight of the polyamic acid ester (A) is preferably 6,000-150,000, more preferably 7,000-50,000, and even more preferably 7,000-20,000.

[0059] <Polymer Having a Polyimide Site and a Polyimide Precursor Site in the Polymer Structure> As a polymer having a polyimide moiety and a polyimide precursor moiety in the polymer structure, a polyimide precursor partially having a polyimide moiety can be used. The precursor, for example, includes a structure represented by the following general formula (15): [Chemistry 28] (15) (wherein, X1, X2, and X3 are each independently a tetravalent organic group having 6 to 40 carbon atoms, Y1 and Y2 are each independently a divalent organic group having 6 to 40 carbon atoms, n1 is an integer from 2 to 30, n2 and n3 are each independently an integer from 2 to 150, R1, R2, R3, and R4 are each independently a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms, and at least one of R1, R2, R3, and R4 is a structure comprising the above-mentioned general formula (13) or (14)).

[0060] In the general formula (15), n² / (n²+n³) is preferably within the range of 0.05 ≤ n² / (n²+n³) ≤ 0.95. From the perspective of flatness, it is preferably 0.1 or greater, more preferably 0.2 or greater, and particularly preferably 0.45 or greater. From the perspective of resolution, it is preferably 0.9 or less, more preferably 0.8 or less, and particularly preferably 0.7 or less. The preferred ranges of X1, X2 and X3 in formula (15) are the same as the preferred range of X1 in formula (12), and the preferred ranges of Y1 and Y2 in formula (15) are the same as the preferred range of Y1 in formula (12).

[0061] <Solvent-soluble polyimide> The solvent-soluble polyimide of this embodiment only needs to be soluble in a solvent. The solvent-soluble polyimide is preferably a polyimide having a structure of the following formula (1): [Chemistry 29] (wherein, X 1 is a tetravalent organic group derived from tetracarboxylic dianhydride, Y 1 is a divalent organic group derived from diamine, and m is an integer greater than or equal to 1).

[0062] In formula (1), X 1 may be a tetravalent organic group having 6 to 40 carbon atoms, in addition to the above, and Y 1 may be a divalent organic group having 6 to 40 carbon atoms, in addition to the above, and m is preferably 2 or greater, more preferably 5 or greater. For example, X 1 in formula (1) is preferably a tetravalent organic group containing an aromatic ring, and Y 1 is preferably a divalent organic group containing an aromatic ring.

[0063] The preferred range of X 1 in formula (1) is the same as the preferred range of X 1 in formula (12), and the preferred range of Y 1 in formula (1) is the same as the preferred range of Y 1 in formula (12). From the viewpoint of resolution, the solvent-soluble polyimide of this embodiment preferably contains a free radical reactive functional group at its terminal.

[0064] (B1) Photoinitiator When the resin composition used in forming the protective layer and the insulating layer is a negative photosensitive resin composition, the composition may contain a photoinitiator. As the photoinitiator (B1), for example, benzophenone, methyl o-benzoylbenzoate, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, and benzophenone derivatives such as fluorenone; acetophenone derivatives such as 2,2'-diethoxyacetophenone and 2-hydroxy-2-methylpropiophenone; 1-hydroxycyclohexyl phenyl ketone, 9-oxosulfonium; , 2-methyl 9-oxosulfuronium , 2-isopropyl 9-oxosulfonium , and diethyl 9-oxosulfonium 9-Oxosulfuronium derivatives; benzoyl derivatives such as benzoyl dimethyl ketal and benzoyl-β-methoxyethyl acetal; benzoin derivatives such as benzoin methyl ether; azides such as 2,6-bis(4'-diazidobenzylidene)-4-methylcyclohexanone and 2,6'-bis(4'-diazidobenzylidene)cyclohexanone; 1-phenyl-1,2-butanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-methoxycarbonyl)oxime Oxime such as oxime, 1-phenylpropanedione-2-(O-ethoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-benzoyl)oxime, 1,3-diphenylpropanetrione-2-(O-ethoxycarbonyl)oxime, and 1-phenyl-3-ethoxypropanetrione-2-(O-benzoyl)oxime; N-arylglycine such as N-phenylglycine; peroxides such as benzoyl peroxide; aromatic biimidazoles; and titanocenes. Among these, the above-mentioned oximes are preferred from the perspective of photosensitivity. The photoinitiator (B1) may be used alone or in combination of two or more.

[0065] The amount of the photoinitiator (B1) added is preferably 1 to 40 parts by mass, more preferably 2 to 20 parts by mass, per 100 parts by mass of the polyamide (A). Adding 1 part by mass or more of the photoinitiator (B1) per 100 parts by mass of the polyamide (A) tends to improve photosensitivity. Adding 40 parts by mass or less tends to improve thick film curability.

[0066] (B2) Photoacid generator The photoacid generator (B2) has a function of increasing the solubility of the light-irradiated portion in the alkaline aqueous solution. When the resin composition used to form the protective layer and the insulating layer is a positive-working photosensitive resin, the composition may contain a photoacid generator. The presence of a photoacid generator generates acid in the UV-exposed area, increasing the solubility of the exposed area in alkaline aqueous solutions. This allows the composition to be used as a positive-working photosensitive resin composition.

[0067] Examples of the photoacid generator (B2) include quinonediazide compounds, coronium salts, phosphonium salts, diazonium salts, and iodonium salts. Quinonediazide compounds are preferably used because they exhibit excellent dissolution inhibition effects and can produce highly sensitive positive-type photosensitive resin compositions.

[0068] (C) Additives As mentioned above, the oxygen permeability of the insulating layer can be adjusted by adjusting the polymer structure within the insulating layer, or by adjusting the type and amount of additives. Using a (meth)acrylate compound containing a halogen such as a fluorine atom as an additive tends to increase oxygen permeability. Examples of such compounds include 2-fluoromethyl acrylate, 2,2,2-trifluoroethyl acrylate, 2,2,3,3,3-pentafluoropropyl acrylate, 2-(perfluorobutyl)ethyl acrylate, 3-perfluorohexyl-2-hydroxypropyl acrylate, 1H,1H,3H-tetrafluoropropyl acrylate, 1H,1H,5H-octafluoropentyl acrylate, 1H,1H,7H-dodecafluoroheptyl acrylate, 1H-1-(trifluoromethyl)trifluoroethyl acrylate, and 1H,1H,3H-hexafluorobutyl acrylate. In addition to the above, examples of compounds that can improve oxygen permeability include fluorene (meth)acrylates having a large free volume.

[0069] The use of plasticizers, compounds that increase the inter-polymer intercalation during heat curing, as additives tends to reduce oxygen permeability. Examples of such plasticizers include dicyclohexyl phthalate, diphenyl phthalate, dicyclohexyl di-2-ethylhexyl trimellitate, dicyclohexyl pyromellitate, and dicyclohexyl adipate.

[0070] (D) Solvent Any solvent capable of dissolving or dispersing the components may be used. Examples include N-methyl-2-pyrrolidone (NMP), γ-butyrolactone (GBL), acetone, methyl ethyl ketone, and dimethyl sulfoxide (DMSO). Depending on the coating thickness and viscosity, these solvents can be used in an amount ranging from 30 to 1500 parts by mass relative to 100 parts by mass of the photosensitive resin (A).

[0071] (E) Other The photosensitive resin (A) may contain a crosslinking agent. The crosslinking agent can be one that crosslinks the photosensitive resin (A) during exposure, development, and subsequent heat curing of the polyimide precursor composition, or one that forms a crosslinked network structure. The use of a crosslinking agent can further enhance the heat and chemical resistance of the cured film (insulating layer).

[0072] In addition, the photosensitive resin (A) may contain a sensitizer for increasing photosensitivity, an adhesive agent for improving adhesion to a substrate, and the like.

[0073] (Exposure and development) After exposing the polyimide precursor, the unneeded areas are rinsed with a developer. When developing the polyimide precursor with a solvent, the developer can include good solvents such as N,N-dimethylformamide, dimethyl sulfoxide (DMSO), N,N-dimethylacetamide, N-methyl-2-pyrrolidone (NMP), cyclopentanone, γ-butyrolactone (GBL), acetates, and mixtures of these good solvents with poor solvents such as lower alcohols, water, and aromatic hydrocarbons. After development, rinsing with a poor solvent is performed as needed.

[0074] In the case of a polyimide precursor developed with an alkaline aqueous solution, preferred are aqueous solutions of alkaline compounds such as tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, and hexamethylenediamine.

[0075] (Thermosetting) After development, the exposed polyimide precursor is heated to close the ring of the polyimide precursor, thereby forming polyimide, which becomes a hardened relief pattern, i.e., an insulating layer.

[0076] Regarding the heating temperature used for thermal curing of the polyimide precursor, the Young's modulus generally tends to increase with increasing curing temperature. To achieve the desired Young's modulus of the insulating layer of this embodiment, the heating temperature is preferably 160°C or higher, more preferably 180°C or higher, and even more preferably 200°C or higher. To minimize the impact on other components, the temperature is preferably 400°C or lower.

[0077] <Polyimide> The structure of the hardened relief pattern formed by the above-mentioned polyimide precursor, such as at least one of the protective layer and the insulating layer, contains a polyimide having a structure of the following general formula (1): [Chemistry 30] (wherein, X 1 is a tetravalent organic group derived from tetracarboxylic dianhydride, Y 1 is a divalent organic group derived from diamine, and m is an integer greater than or equal to 1). The preferred X 1, Y 1, and m in the general formula (12) are also preferred in the polyimide represented by the general formula (1) for the same reasons.

[0078] In the case of alkali-soluble polyimide, the terminal of the polyimide may also be a hydroxyl group. When the protective layer of this embodiment comprises polyimide, the peak ratio of the peak height near 1380 cm-1 to the peak height near 1500 cm-1 (peak height near 1380 cm-1 / peak height near 1500 cm-1) measured by IR spectroscopy using total reflectance (ATR) is preferably 1.2 to 2.5. From the perspective of chemical resistance, it is preferably 1.3 or higher, more preferably 1.4 or higher, and particularly preferably 1.5 or higher. From the perspective of developability, it is preferably 2.4 or lower, more preferably 2.3 or lower, and particularly preferably 2.2 or lower. The "peak height around 1380 cm -1 " mentioned herein is, for example, the maximum peak height in the range of 1330-1430 cm -1 , and the "peak height around 1500 cm -1 " mentioned herein is, for example, the maximum peak height in the range of 1450-1550 cm -1 .

[0079] When the insulating layer of this embodiment comprises polyimide, the peak ratio of the peak height near 1380 cm-1 to the peak height near 1500 cm-1 (peak height near 1380 cm-1 / peak height near 1500 cm-1) measured by IR spectroscopy using attenuated total reflection (ATR) is preferably 0.2 to 2.5. From the perspective of chemical resistance, it is preferably 0.3 or greater, more preferably 0.4 or greater, and particularly preferably 0.5 or greater. From the perspective of developability, it is preferably 1.0 or less, more preferably 0.7 or less, and particularly preferably 0.6 or less. The "peak height around 1380 cm -1 " mentioned herein is, for example, the maximum peak height in the range of 1330-1430 cm -1 , and the "peak height around 1500 cm -1 " mentioned herein is, for example, the maximum peak height in the range of 1450-1550 cm -1 .

[0080] <Polybenzoxazole precursor> (A) Photosensitive resin As the photosensitive resin used as the polybenzoxazole precursor, a poly(o-hydroxyamide) containing a repeating unit represented by the following general formula (11A) can be used: [Chemistry 31] (wherein, Y 2 and Y 3 are divalent organic groups).

[0081] From the perspective of adhesion between the insulating layer and the sealing material, Y2 is preferably a divalent organic group having 1 to 30 carbon atoms, more preferably a chain alkylene group having 1 to 15 carbon atoms (wherein the hydrogen atoms of the chain alkylene group may be substituted with halogen atoms), and even more preferably a chain alkylene group having 1 to 8 carbon atoms in which some or all of the hydrogen atoms are substituted with fluorine atoms.

[0082] Furthermore, from the viewpoint of adhesion between the insulating layer and the sealing material, Y3 is preferably a divalent organic group containing an aromatic group, and more preferably a divalent organic group containing at least one structure represented by the following general formula (7) to general formula (9):

[0083] [Chemistry 32] (In the formula, R10, R11, R12, and R13 are each independently a hydrogen atom or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different)

[0084] [Chemistry 33] (In the formula, R14 to R21 are each independently a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be the same or different)

[0085] [Chemistry 34] (wherein, R 22 is a divalent organic group or an oxygen atom, R 23 to R 30 are each independently a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same as or different from each other, k is an integer of 1 to 3, and when k is 2 or 3, R 22, R 23, R 24, R 27, and R 28 may be the same as or different from each other).

[0086] R 22 in the general formula (9) can be, for example, a divalent organic group having 1 to 40 carbon atoms, or a halogen atom.

[0087] From the viewpoint of adhesion between the insulating layer and the sealing material, Y 3 is preferably a divalent organic group having a structure represented by the following general formula (10): [Chemistry 35] .

[0088] Furthermore, from the viewpoint of adhesion between the insulating layer and the sealing material, Y 3 is preferably a divalent organic group having 1 to 40 carbon atoms, more preferably a divalent chain aliphatic group having 1 to 40 carbon atoms, and even more preferably a divalent chain aliphatic group having 1 to 20 carbon atoms.

[0089] Polybenzoxazole precursors can typically be synthesized from dicarboxylic acid derivatives and hydroxyl-containing diamines. Specifically, they can be synthesized by converting the dicarboxylic acid derivative into a dihalide derivative, which is then reacted with a diamine. The dihalide derivative is preferably a dichloride derivative.

[0090] Dichloride derivatives can be synthesized by reacting dicarboxylic acid derivatives with a halogenating agent. Halogenating agents such as thionyl chloride, phosphinoyl chloride, phosphorus oxychloride, and phosphorus pentachloride, which are commonly used in the acyl chlorination of carboxylic acids, can be used.

[0091] The dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with the above-mentioned halogenating agent in a solvent, or by reacting the dicarboxylic acid derivative with an excess of the halogenating agent and then removing the excess by distillation.

[0092] Examples of the dicarboxylic acid used in the dicarboxylic acid derivative include isophthalic acid, terephthalic acid, 2,2-bis(4-carboxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 4,4'-dicarboxybiphenyl, 4,4'-dicarboxydiphenyl ether (4,4'-diphenyl ether dicarboxylic acid), 4,4'-dicarboxytetraphenylsilane, bis(4-carboxyphenyl)sulfonium, 2,2-bis(p-carboxyphenyl) Propane, 5-tert-butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6-naphthalene dicarboxylic acid, malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n-butylmalonic acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexafluoroglutaric acid, 2-Methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid, octafluoroadipic acid, pimelic acid, 2,2,6,6-tetramethylpimelic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid, hexadecafluorodecaic acid, 1,9-azelaic acid, dodecanedioic acid, tridecanedioic acid , Tetradecanedioic acid, Pentadecanedioic acid, Hexadecanedioic acid, Heptadecanedioic acid, Octadecanedioic acid, Nonadecanedioic acid, Eicosanedioic acid, Hexadecanedioic acid, Behenedioic acid, Tricosanedioic acid, Tetracosanedioic acid , Pentacosanedioic acid, hexacosanedioic acid, heptacosanedioic acid, octacosanedioic acid, nonacosanedioic acid, triacontanedioic acid, hexadecanedioic acid, hexadecanedioic acid, diglycolic acid, dicyclopentadienecarboxylic acid, etc. These can be mixed and used.

[0093] Examples of hydroxyl-containing diamines include 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, bis(3-amino-4-hydroxyphenyl)propane, bis(4-amino-3-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)sulfonium, bis(4-amino-3-hydroxyphenyl)sulfonium, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, and 2,2-bis(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane. These may be used in combination.

[0094] (B2) Photoacid generator Examples of the photoacid generator (B2) include naphthoquinone diazide compounds, aryldiazonium salts, diaryliodonium salts, and triarylsonium salts. Among them, naphthoquinone diazide compounds are preferred due to their high sensitivity.

[0095] (C) Additives Preferred types and amounts of the additive (C) are the same as those described in relation to <Polyimide>.

[0096] (D) Solvent The solvent (D) may be any solvent as long as it can dissolve or disperse the components.

[0097] (E) Other The polybenzoxazole precursor may contain a crosslinking agent, a sensitizer, an adhesive agent, a thermal acid generator, etc. In addition to the above, the polybenzoxazole precursor may contain desired additives.

[0098] (Exposure and development) After exposing the polybenzoxazole precursor, the unwanted areas are washed away with a developer. Preferred developers include alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide.

[0099] In the above description, the positive-type polybenzoxazole precursor is mainly used, but a negative-type polybenzoxazole precursor may also be used.

[0100] (Thermosetting) After development, the polybenzoxazole precursor is heated to close the rings of the polybenzoxazole precursor, thereby forming polybenzoxazole. The polybenzoxazole forms a hardened relief pattern, i.e., the insulating layer 6.

[0101] From the perspective of the impact on other components, the heating temperature for thermal curing of the polybenzoxazole precursor is preferably a lower temperature. The heating temperature is preferably 250°C or lower, more preferably 230°C or lower, even more preferably 200°C or lower, and particularly preferably 180°C or lower.

[0102] <Polybenzoxazole> The structure of the hardened relief pattern formed by the polybenzoxazole precursor includes the polybenzoxazole having the structure of the following general formula (11): [Chemistry 36] (wherein, U and V are each independently a divalent organic group).

[0103] U in the general formula (11) may be the same as Y 2 in the general formula (11A), and V in the general formula (11) may be the same as Y 3 in the general formula (11A). Preferred Y 2 and Y 3 in the general formula (11A) are also preferred for U and V in the general formula (11) for the same reasons.

[0104] <Polymers with phenolic hydroxyl groups> (A) Photosensitive resin The polymer having phenolic hydroxyl groups of this embodiment is a resin having phenolic hydroxyl groups in its molecule and is soluble in alkali. Specific examples include vinyl polymers containing monomer units having phenolic hydroxyl groups, such as poly(hydroxystyrene), phenol resins, poly(hydroxyamides), poly(hydroxyphenylene) ethers, and polynaphthols. Among these, phenol resins are preferred, and novolac-type phenol resins are particularly preferred, from the perspective of lower cost or smaller volume shrinkage during hardening.

[0105] Phenolic resins are condensation products of phenol or its derivatives with aldehydes. This condensation occurs in the presence of a catalyst, such as an acid or base. Phenolic resins obtained using an acid catalyst are particularly known as novolac-type phenolic resins.

[0106] Examples of the phenol derivatives include phenol, cresol, ethylphenol, propylphenol, butylphenol, pentylphenol, benzylphenol, adamantanephenol, benzyloxyphenol, xylenol, catechol, resorcinol, ethylresorcinol, hexylresorcinol, hydroquinone, pyrogallol, phloroglucinol, 1,2,4-trihydroxybenzene, rhodoxolic acid, biphenol, bisphenol A, bisphenol AF, bisphenol B, bisphenol F, bisphenol S, dihydroxydiphenylmethane, 1,1-bis(4-hydroxyphenyl)cyclohexane, 1,4-bis(3-hydroxyphenoxybenzene), 2,2-bis(4-hydroxy-3-methylphenyl)propane, α,α'-bis(4-hydroxyphenyl)-1,4-diisopropylbenzene, 9,9-bis(4-hydroxy-3-methylphenyl)fluorene, 2,2-bis(3-cyclohexyl-4-hydroxyphenyl)propane, 2,2-bis(2-hydroxy-5-biphenyl)propane, dihydroxybenzoic acid, etc.

[0107] Examples of the aldehyde compound include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, pivalaldehyde, butyraldehyde, valeraldehyde, hexanal, trioxane, glyoxal, cyclohexanal, diphenylacetaldehyde, ethylbutyraldehyde, benzaldehyde, glyoxylic acid, 5-northene-2-carboxaldehyde, malondialdehyde, succinic dialdehyde, glutaraldehyde, salicylic acid, naphthaldehyde, and terephthalaldehyde.

[0108] The photosensitive resin (A) preferably comprises component (a): a phenolic resin without unsaturated hydrocarbon groups; and component (b): a modified phenolic resin having unsaturated hydrocarbon groups. Component (b) is more preferably modified by reacting the phenolic hydroxyl groups with a polybasic acid anhydride.

[0109] Furthermore, as the component (b), from the viewpoint of further improving the mechanical properties (elongation at break, elastic modulus, and residual stress), it is preferred to use a phenol resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms.

[0110] (b) The modified phenol resin having an unsaturated hydrocarbon group is generally a reaction product (hereinafter referred to as an "unsaturated hydrocarbon group-modified phenol derivative") of a phenol or a derivative thereof with a compound having an unsaturated hydrocarbon group (preferably one having 4 to 100 carbon atoms) (hereinafter sometimes referred to as an "unsaturated hydrocarbon group-containing compound") and an aldehyde, or a reaction product of a phenol resin and an unsaturated hydrocarbon group-containing compound.

[0111] The phenol derivatives used here may be the same phenol derivatives as those described above as the raw materials of the phenol resin of the photosensitive resin (A).

[0112] From the perspective of resist pattern adhesion and thermal shock resistance, the unsaturated hydrocarbon group of the unsaturated hydrocarbon group-containing compound preferably contains two or more unsaturated groups. Furthermore, from the perspective of compatibility when formulated into a resin composition and the flexibility of the cured film, the unsaturated hydrocarbon group-containing compound preferably has 8 to 80 carbon atoms, more preferably 10 to 60 carbon atoms.

[0113] Examples of compounds containing unsaturated hydrocarbon groups include unsaturated hydrocarbons having 4 to 100 carbon atoms, polybutadiene having a carboxyl group, epoxidized polybutadiene, linolenyl alcohol, oleyl alcohol, unsaturated fatty acids, and unsaturated fatty acid esters. Suitable unsaturated fatty acids include butyric acid, myristoleic acid, palmitoleic acid, oleic acid, elaidic acid, vaccenic acid, gadoleic acid, erucic acid, lignoceric acid, linolenic acid, α-linolenic acid, eleostearic acid, stearidonic acid, arachidonic acid, eicosapentaenoic acid, herringic acid, and docosahexaenoic acid. Among these, esters of unsaturated fatty acids having 8 to 30 carbon atoms and mono- to trivalent alcohols having 1 to 10 carbon atoms are particularly preferred, and esters of unsaturated fatty acids having 8 to 30 carbon atoms and glycerol as a trivalent alcohol are particularly preferred.

[0114] Esters of unsaturated fatty acids with 8 to 30 carbon atoms and glycerol can be commercially obtained as vegetable oils. Vegetable oils include non-drying oils with an iodine value of 100 or less, semi-drying oils with an iodine value of more than 100 but less than 130, and drying oils with an iodine value of 130 or higher. Examples of non-drying oils include olive oil, morning glory seed oil, Polygonum multiflorum seed oil, camellia oil, camellia oil, castor oil, and peanut oil. Examples of semi-drying oils include corn oil, cottonseed oil, and sesame oil. Examples of drying oils include tung oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, perilla oil, and mustard oil. Processed vegetable oils obtained by processing these vegetable oils can also be used.

[0115] Among the aforementioned vegetable oils, non-drying oils are preferred for the reaction between phenol or its derivatives or phenolic resins and vegetable oils, from the perspective of preventing gelation associated with excessive reaction and improving yield. On the other hand, drying oils are preferred for improving the adhesion, mechanical properties, and thermal shock resistance of the resist pattern. Among drying oils, tung oil, linseed oil, soybean oil, walnut oil, and safflower oil are preferred, with tung oil and linseed oil being more preferred, from the perspective of more effectively and reliably exerting the effects of the present invention.

[0116] These unsaturated hydrocarbon group-containing compounds may be used alone or in combination of two or more.

[0117] To prepare component (b), the phenol derivative is first reacted with the unsaturated hydrocarbon group-containing compound to produce an unsaturated hydrocarbon group-modified phenol derivative. The reaction is preferably carried out at 50-130°C. From the perspective of improving the flexibility of the cured film (resist pattern), the reaction ratio of the phenol derivative to the unsaturated hydrocarbon group-containing compound is preferably 1-100 parts by mass, and more preferably 5-50 parts by mass, per 100 parts by mass of the phenol derivative. If the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, while if it exceeds 100 parts by mass, the heat resistance of the cured film tends to decrease. In the reaction, p-toluenesulfonic acid, trifluoromethanesulfonic acid, or the like may be used as a catalyst, if necessary.

[0118] The unsaturated hydrocarbon group-modified phenol derivative produced by the above reaction is polycondensed with an aldehyde to produce a phenol resin modified with an unsaturated hydrocarbon group-containing compound. The aldehyde used can be the same as that described above for obtaining the phenol resin.

[0119] The reaction between the aldehyde and the unsaturated hydrocarbon-modified phenol derivative is a polycondensation reaction, and conventional phenol resin synthesis conditions can be employed. The reaction is preferably carried out in the presence of a catalyst such as an acid or base, more preferably an acid catalyst. Examples of acid catalysts include hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid, and oxalic acid. These acid catalysts may be used singly or in combination of two or more.

[0120] The above reaction is typically conducted at a temperature of 100-120°C. The reaction time varies depending on the type and amount of catalyst used, but is typically 1-50 hours. After the reaction, the reaction product is dehydrated under reduced pressure at a temperature below 200°C to obtain a phenolic resin modified with a compound containing an unsaturated hydrocarbon group. Solvents such as toluene, xylene, and methanol can also be used in the reaction.

[0121] A phenol resin modified with an unsaturated hydrocarbon group-containing compound can also be obtained by polycondensing the unsaturated hydrocarbon group-modified phenol derivative with a non-phenol compound such as m-xylene and an aldehyde. In this case, the molar ratio of the non-phenol compound relative to the compound obtained by reacting the phenol derivative with the unsaturated hydrocarbon group-containing compound is preferably less than 0.5.

[0122] Component (b) can also be obtained by reacting the phenol resin (component (a)) with an unsaturated hydrocarbon group-containing compound. The unsaturated hydrocarbon group-containing compound to be reacted with the phenol resin can be the same as the unsaturated hydrocarbon group-containing compound described above.

[0123] The reaction between the phenol resin and the unsaturated hydrocarbon group-containing compound is generally preferably carried out at 50-130°C. Furthermore, from the perspective of improving the flexibility of the cured film (resist pattern), the reaction ratio of the phenol resin to the unsaturated hydrocarbon group-containing compound is preferably 1-100 parts by mass, more preferably 2-70 parts by mass, and even more preferably 5-50 parts by mass per 100 parts by mass of the phenol resin. If the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease. If it exceeds 100 parts by mass, the possibility of gelation during the reaction tends to increase, and the heat resistance of the cured film tends to decrease. In this case, p-toluenesulfonic acid, trifluoromethanesulfonic acid, or the like may be used as a catalyst, if necessary. Furthermore, solvents such as toluene, xylene, methanol, and tetrahydrofuran may be used in the reaction.

[0124] The polybasic acid anhydride is then reacted with the phenolic hydroxyl groups remaining in the phenolic resin, which is produced by the above-described method and modified with a compound containing an unsaturated hydrocarbon group. This allows the use of an acid-modified phenolic resin as component (b). Acid modification with a polybasic acid anhydride introduces carboxyl groups, further improving the solubility of component (b) in alkaline aqueous solutions (developers).

[0125] The polybasic acid anhydride may contain an acid anhydride group formed by dehydration condensation of the carboxyl groups of a polybasic acid having multiple carboxyl groups. Examples of the polybasic acid anhydride include dibasic acid anhydrides such as phthalic anhydride, succinic anhydride, octenylsuccinic anhydride, pentadecenylsuccinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, naphthalic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride, and trimellitic anhydride; and aromatic tetrabasic acid dianhydrides such as biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic dianhydride, and benzophenonetetracarboxylic dianhydride. These can be used alone or in combination of two or more. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, more preferably one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride. This further advantageously allows for the formation of a resist pattern with a well-defined shape.

[0126] The photosensitive resin (A) may further contain a phenolic resin modified with an acid by reacting a polybasic acid anhydride. By containing the phenolic resin modified with an acid by a polybasic acid anhydride, the solubility of the photosensitive resin (A) in an alkaline aqueous solution (developer) is further improved.

[0127] Examples of the polybasic acid anhydride include dibasic acid anhydrides such as phthalic anhydride, succinic anhydride, octenylsuccinic anhydride, pentadecenylsuccinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, naphthalic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride, and trimellitic anhydride; and aliphatic and aromatic tetrabasic acid dianhydrides such as biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic dianhydride, and benzophenonetetracarboxylic dianhydride. These can be used alone or in combination of two or more. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, for example, more preferably one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride and hexahydrophthalic anhydride.

[0128] (B2) Photoacid generator Examples of photoacid generators include naphthoquinone diazide compounds, aryldiazonium salts, diaryliodonium salts, and triarylsonium salts. Among these, naphthoquinone diazide compounds are preferred due to their high sensitivity.

[0129] (C) Additives Preferred types and amounts of the additive (C) are the same as those described in relation to <Polyimide>.

[0130] (D) Solvent The solvent (D) may be any solvent as long as it can dissolve or disperse the components.

[0131] (E) Other The composition may include a thermal crosslinking agent, a sensitizer, an adhesive aid, a dye, a surfactant, a dissolution accelerator, a crosslinking accelerator, and the like. The inclusion of a thermal crosslinking agent allows the thermal crosslinking agent component to react with the photosensitive resin (A) to form a bridge structure when the patterned photosensitive resin film is heated to cure. This allows for low-temperature curing, preventing film brittleness or melting. Specifically, preferred thermal crosslinking agent components include compounds having phenolic hydroxyl groups, compounds having hydroxymethylamine groups, and compounds having epoxy groups.

[0132] (Exposure and development) After exposing the polymer having phenolic hydroxyl groups, the unwanted areas are washed away with a developer. Suitable developers include alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide (TMAH).

[0133] (Thermosetting) After development, the polymer having phenolic hydroxyl groups is heated to thermally crosslink the polymer having phenolic hydroxyl groups. The crosslinked polymer becomes a hardened relief pattern, i.e., the insulating layer 6.

[0134] Regarding the heating temperature for thermal curing of polymers having phenolic hydroxyl groups, a relatively low temperature is preferred from the perspective of the effect on other components. The heating temperature is preferably 250°C or lower, more preferably 230°C or lower, even more preferably 200°C or lower, and particularly preferably 180°C or lower.

[0135] <<Method for manufacturing a semiconductor device>> The manufacturing method of the semiconductor device 1 of this embodiment includes the following steps: The first step is to prepare a semiconductor wafer 2; A second step is to cover the prepared semiconductor wafer 2 with a sealing material in such a manner that at least a portion of the semiconductor wafer 2 is exposed; and In the third step, a redistribution layer 4 having an area larger than that of the semiconductor chip 2 is formed on the exposed surface of the semiconductor chip 2; and The redistribution layer 4 includes an insulating layer 6 having an oxygen permeability of 150 to 7000 cm 3 / m 2 ·day·atm.

[0136] Here, the second step preferably includes the following steps: forming a protective layer on the semiconductor wafer (protective layer forming step); and The semiconductor wafer having the protective layer formed thereon is covered with a sealing material in such a manner that at least a portion of the protective layer is exposed (sealing material forming step). Furthermore, the third step preferably includes a step of forming a redistribution layer on the protective layer side.

[0137] The method for manufacturing a semiconductor device 1 is described using FIG3 . FIG3 shows an example of the steps for manufacturing a semiconductor device 1. In FIG3A , a wafer 10 is prepared after the preparatory step. A photosensitive resin composition (a photosensitive composition for forming a protective layer) is then applied, and exposure and development are performed to form a relief pattern (protective layer formation step). Furthermore, in FIG3B , the wafer is cut to form a plurality of semiconductor wafers 2. As shown in FIG3C , the semiconductor wafers 2 prepared in this manner are attached to a support 11 at predetermined intervals.

[0138] Next, a mold resin 12 is applied from the semiconductor wafer 2 onto the support 11, and mold sealing is performed as shown in FIG3D (sealant forming step). Next, the support 11 is peeled off, and the mold resin 12 is turned over (see FIG3E ). As shown in FIG3E , the semiconductor wafer 2 and the mold resin 12 are approximately in the same plane. Next, in the step shown in FIG3F , a photosensitive resin composition 13 is applied onto the semiconductor wafer 2 and the mold resin 12. The applied photosensitive resin composition 13 is then exposed and developed to form a relief pattern (relief pattern forming step). The photosensitive resin composition 13 can be either positive or negative. Furthermore, the relief pattern is heated to form a hardened relief pattern (insulating layer forming step). Furthermore, wiring is formed in the area where the hardened relief pattern is not formed (wiring forming step).

[0139] Furthermore, in this embodiment, the above-mentioned relief pattern forming step, insulating layer forming step, and wiring forming step are combined into a redistribution layer forming step, and the redistribution layer connected to the semiconductor chip 2 is formed in the redistribution layer forming step.

[0140] The insulating layer in the redistribution layer may be multi-layered. Therefore, the redistribution layer forming step may include a plurality of embossed pattern forming steps, a plurality of insulating layer forming steps, and a plurality of wiring forming steps.

[0141] Furthermore, in FIG3G , a plurality of external connection terminals 7 (bump formation) are formed corresponding to each semiconductor wafer 2, and dicing is performed between each semiconductor wafer 2. This results in a semiconductor device (semiconductor IC) 1, as shown in FIG3H . In this embodiment, a plurality of fan-out semiconductor devices 1 can be obtained using the manufacturing method shown in FIG3 .

[0142] In this embodiment, in the insulating layer forming step, the insulating layer is preferably formed using a photosensitive resin composition capable of forming at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[0143] Furthermore, when forming a protective layer, it is preferred to form the protective layer using a photosensitive resin composition capable of forming at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[0144] [Other embodiments] The present embodiment has been described above, but the present invention is not limited to the above.

[0145] For example, the sealing material may include a sealing member surrounding the side surfaces of the semiconductor wafer and a tape layer superimposed on the upper surface of the semiconductor wafer (the surface opposite to the surface where the insulating layer is disposed). The sealing member may be in contact with the insulating layer and may include epoxy resin.

[0146] While FIG1 shows a semiconductor wafer 2 comprising two dies arranged side by side, the semiconductor wafer may also comprise three or more dies arranged side by side. Furthermore, the protective layer 8 may be omitted. In this case, the semiconductor wafer and the sealing material form a substantially flush surface, and the redistribution layer is disposed on this surface.

[0147] A further aspect of the present invention is an insulating layer 6 for forming a redistribution layer 4 in a semiconductor device 1 having: Semiconductor wafer 2; a sealing material 3 covering the semiconductor chip 2 in such a manner that at least a portion of the semiconductor chip 2 is exposed; and The redistribution layer 4 is disposed on the side of the semiconductor chip 2 that is not covered by the sealing material 3 and has an area larger than the semiconductor chip 2 when viewed from above; and The oxygen permeability of the insulating layer 6 is 150-7000 cm 3 / m 2·day·atm.

[0148] Furthermore, a further aspect of the present invention is a redistribution layer 4 disposed in a semiconductor chip 2, wherein the semiconductor chip 2 comprises: Semiconductor wafer 2; and A sealing material covering the semiconductor chip 2 in such a manner that at least a portion of the semiconductor chip 2 is exposed; the redistribution layer 4 is disposed on the side of the semiconductor chip 2 that is not covered by the sealing material and has an area larger than the semiconductor chip 2 when viewed from above; The redistribution layer 4 comprises: Wiring 5, which is electrically connected to the semiconductor chip 2; and The insulating layer 6 is in contact with the wiring 5 and has an oxygen permeability of 150 to 7000 cm 3 / m 2·day·atm.

[0149] The requirements and preferred requirements applicable to the semiconductor device as one aspect of the present invention are also applicable and preferred in aspects other than semiconductor devices (e.g., insulating layers and redistribution layers, and methods for manufacturing semiconductor devices). For example, a preferred oxygen permeability (cm³ / m²·day·atm) in a semiconductor device is also preferred in insulating layers and redistribution layers, and is also preferred in methods for manufacturing semiconductor devices. [Example]

[0150] The present invention is described below with reference to Examples and Comparative Examples. In the Examples and Comparative Examples, the following materials and measurement methods were used.

[0151] The abbreviations used in Examples and Comparative Examples are as follows. ODPA:4,4'-oxydiphthalic dianhydride BPDA:3,3',4,4'-biphenyltetracarboxylic dianhydride BPADA:4,4'-(4,4'-isopropylidenediphenoxy)diphthalic dianhydride 6FDA: 4,4'-(hexafluoroisopropylidene)diphthalic dianhydride DADPE:4,4'-diaminodiphenyl ether BAPP:2,2-bis[4-(4-aminophenoxy)phenyl]propane m-TB:4,4'-diamino-2,2'-dimethylbiphenyl MBAPP:2,2-bis[4-(4-aminophenoxy)-3-methylphenyl]propane TFMB:2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl BAFL:9,9'-bis(4-aminophenyl)fluorene DCC: Dicyclohexylcarbodiimide HEMA: 2-Hydroxyethyl Methacrylate GBL:γ-butyrolactone NMP: N-methyl-2-pyrrolidone

[0152] (Polymer A-1: ​​Synthesis of polyimide precursor) 88.3 g of ODPA (tetracarboxylic dianhydride) and 55.8 g of BPDA were placed in a 2-liter separable flask. Then, 128.4 g of HEMA and GBL were added, and pyridine (80 g) was added while stirring at room temperature to obtain a reaction mixture. After the exotherm caused by the reaction subsided, the mixture was allowed to cool to room temperature and then allowed to stand for 16 hours.

[0153] Next, a solution of 192.7 g of DCC dissolved in GBL was added to the reaction mixture over 40 minutes while stirring under ice cooling. Subsequently, a solution of 92.9 g of the diamine DADPE suspended in GBL was added to the reaction mixture over 60 minutes while stirring. After stirring at room temperature for 2 hours, ethanol was added and stirred for 1 hour, followed by the addition of GBL. The precipitate formed in the reaction mixture was removed by filtration to obtain a reaction solution.

[0154] Ethanol was added to the resulting reaction solution to form a precipitate containing a crude polymer. The resulting crude polymer was separated by filtration and dissolved in tetrahydrofuran to obtain a crude polymer solution. The resulting crude polymer solution was dropwise added to water to precipitate the polymer, and the resulting precipitate was separated by filtration. The resulting precipitate was then vacuum-dried to obtain a powdered polymer (polyimide precursor (Polymer A-1)). Its weight-average molecular weight (Mw) was 22,000.

[0155] (Polymer A-2: Synthesis of polyimide precursor) Polymer A-2 was obtained by the same method as for Polymer A-1, except that 246.8 g of BPADA was used as the tetracarboxylic dianhydride and 92.9 g of DADPE was used as the diamine. The weight average molecular weight (Mw) of the polymer was 21,000.

[0156] (Polymer A-3: Synthesis of polyimide precursor) Polymer A-3 was obtained by the same method as for Polymer A-1, except that 147.11 g of ODPA was used as the tetracarboxylic dianhydride and 190.5 g of BAPP was used as the diamine. Its weight-average molecular weight (Mw) was 23,000.

[0157] (Polymer A-4: Synthesis of Polyimide Precursor) Polymer A-4 was obtained by the same method as for Polymer A-1, except that 127.2 g of naphthalene dianhydride was used as the tetracarboxylic dianhydride and 98.5 g of m-TB was used as the diamine. Its weight-average molecular weight (Mw) was 20,000.

[0158] (Synthesis of Diamine Oligomer W-1: Polyimide) To a 0.5-liter separable flask equipped with a Dean-Stark tube and a condenser, 41.6 g of BPADA (the acid component), 34.0 g of m-TB (the diamine component), and 176.4 g of NMP (the solvent) were added and stirred. 42.3 g of toluene was then added and stirred, and then the temperature was raised to 185°C under a nitrogen stream. After stirring at 185°C for 2.5 hours, the toluene and water generated by the imidization reaction were removed from the system over 1.5 hours. The solution was then cooled to room temperature to obtain a solution of diamine oligomer W-1 having repeating units with a polyimide structure. The weight-average molecular weight (Mw) of diamine oligomer W-1 was 3,000. 1H-NMR (Nuclear Magnetic Resonance) analysis of diamine oligomer W-1 was performed, and the peaks derived from the amide bonds of the polyimide were compared with those derived from the aromatic rings to determine the amide ring closure rate. The amide ring closure rate was found to be greater than 99%.

[0159] (Synthesis of Diamine Oligomer W-2: Polyimide) A solution of diamine oligomer W-2 was obtained by the same method as for diamine oligomer W-1, except that 52.6 g of MBAPP, 220 g of NMP as the solvent, and 52.8 g of toluene were used instead of 34.0 g of m-TB. The weight-average molecular weight (Mw) of diamine oligomer W-2 was 5,000. 1H-NMR measurement was performed in the same manner as for diamine oligomer W-1 to confirm the imide ring closure rate. The imide ring closure rate was 99% or more.

[0160] (Polymer B-1: Synthesis of a polyimide precursor having a polyimide moiety) 20.9 g of BPADA, the acid component, was placed in a 1-liter separable flask, along with 10.9 g of HEMA and 42 g of GBL. 6.4 g of pyridine was added while stirring at room temperature, and the mixture was heated at 50°C for 4 hours. After the exotherm caused by the reaction subsided, the mixture was allowed to cool to room temperature. The mixture was then allowed to stand for 16 hours to obtain a reaction mixture.

[0161] Next, under ice cooling, a solution of 16.3 g of DCC dissolved in 16.3 g of GBL was added to the reaction mixture over 40 minutes while stirring. Subsequently, 91.0 g of GBL was added. Subsequently, a solution of 101.7 g of the NMP solution of the diamine oligomer W-2 prepared above and 66.5 g of GBL, as the diamine component, was added over 20 minutes while stirring. Subsequently, a solution of 2.4 g of m-TB dissolved in 7 g of GBL was added over 5 minutes while stirring. Furthermore, after stirring at room temperature for 4 hours, 6.4 g of ethanol was added and stirred for 30 minutes, followed by the addition of 49.0 g of GBL. The precipitate formed in the reaction mixture was removed by filtration to obtain a reaction solution.

[0162] The resulting reaction solution was added to 1000 g of ethanol, forming a precipitate containing a crude polymer. The resulting crude polymer was filtered and dissolved in 270 g of GBL to obtain a crude polymer solution. The resulting crude polymer solution was purified using an anion exchange resin ("Amberlyst TM15JWET" manufactured by Organo Co., Ltd.) to obtain a polymer solution. The resulting polymer solution was added dropwise to 3800 g of water to precipitate the polymer, and the resulting precipitate was filtered. Subsequently, vacuum drying was performed to obtain a powdered polymer B-1. The weight-average molecular weight (Mw) of polymer B-1 was 30,000, and the imide group introduction ratio was 0.43. The average imide group concentration U per repeating unit of the polyimide obtained from polymer B-1 was 16.0 wt %. The "imide group concentration U" is calculated based on the polyimide content of the cured polyimide film obtained by heating and curing at 350°C (the same applies below).

[0163] (Polymer B-2: Synthesis of a polyimide precursor having a polyimide moiety) Place 15.2 g of BPADA in a 1-liter separable flask, add 7.9 g of HEMA, and 30.8 g of GBL. Add 4.6 g of pyridine while stirring at room temperature, and heat at 50°C for 4 hours. After the exotherm caused by the reaction subsides, allow to cool to room temperature. Allow to stand for 16 hours to obtain a reaction mixture.

[0164] Next, under ice cooling, a solution of 11.9 g of DCC dissolved in 11.9 g of GBL was added to the reaction mixture over 40 minutes while stirring. Subsequently, 91.0 g of GBL was added. Subsequently, a solution of 111.5 g of the NMP solution of the diamine oligomer W-1 prepared above and 72.9 g of GBL, as the diamine component, was added over 20 minutes while stirring. Furthermore, after stirring at room temperature for 4 hours, 49.0 g of GBL was added. The precipitate formed in the reaction mixture was removed by filtration to obtain a reaction solution.

[0165] The subsequent purification steps were performed using the same method as for polymer B-1 to obtain polymer B-2. Polymer B-2 had a weight-average molecular weight (Mw) of 24,000 and an imide group introduction rate of 0.58. Furthermore, the average imide group concentration U per repeating unit of the polyimide obtained from polymer B-2 was 20.1 wt%.

[0166] (Polymer C-1: Synthesis of Solvent-Soluble Polyimide) A Dean-Stark extraction apparatus was installed, and 100.0 g of NMP and 34.9 g (0.1 mol) of BAFL were added to a nitrogen-purged three-necked flask and dissolved. To this, 15.6 g (0.05 mol) of ODPA and 25.0 g of toluene were added, and the mixture was heated to 180°C.

[0167] After confirming that the theoretical amount of water (1.80 g) and the added toluene (25.0 g) were extracted in the Dean-Stark extraction apparatus, heating was stopped and the mixture was cooled to room temperature.

[0168] To the resulting reaction solution, 15.5 g (0.1 mol) of Karenz (registered trademark) MOI (trade name; manufactured by Showa Denko Co., Ltd.) was added and stirred to obtain a polymer solution. The resulting polymer solution was added dropwise to 3 kg of water to precipitate the polymer, which was then separated by filtration. Subsequently, vacuum drying was performed to obtain terminally modified polyimide C-1 as a powder. This polyimide C-1 had a weight-average molecular weight (Mw) of 4,400, a number-average molecular weight (Mn) of 3,400, and a polydispersity (Mw / Mn) of 1.29. Furthermore, based on the integrated ratio of proton NMR, it was confirmed that the modification rate of the polyimide main chain terminal was 95%.

[0169] (Polymer C-2: Synthesis of Solvent-Soluble Polyimide) Polyimide C-2 was obtained using the same method as in Preparation Example 1, except that the amount of BAFL in Preparation Example 1 was changed to 26.2 g and the amount of Karenz MOI was changed to 7.8 g. Polyimide C-2 had a weight average molecular weight (Mw) of 6,900, a number average molecular weight (Mn) of 5,200, and a polydispersity (Mw / Mn) of 1.33. Furthermore, the terminal modification rate was confirmed to be 94% from the integrated ratio of proton NMR.

[0170] (Polymer C-3: Synthesis of Solvent-Soluble Polyimide) 64.1 g of TFMB was placed in a 1-liter separable flask, and 400 ml of GBL was added under a nitrogen atmosphere. While stirring at room temperature, 97.7 g of 6FDA was added, and the mixture was stirred at room temperature for 6 hours to obtain a polyamide solution. Subsequently, 15 g of pyridine and 80 g of acetic anhydride were added, along with 40 g of toluene. The mixture was then stirred at 185°C for 4 hours, and the theoretical amount of water was confirmed to have been removed. After removing the toluene, the mixture was cooled to room temperature to obtain a solution containing polyimide (Polymer C-3). The resulting solution was post-treated using the same method as for Polymer C-1 (polymer precipitation, filtration, and vacuum drying) to obtain Polymer C-3. The weight-average molecular weight (Mw) of Polymer C-3 was 22,000.

[0171] [Mixture Examples 1-12] A solution of a photosensitive resin composition was obtained by blending the components as shown in the following table. Note that the amounts of the components in Table 1 are expressed in parts by mass. The oxygen permeability, short-circuit time after the BHAST (Biased Highly Accelerated Temperature and Humidity Stress Test) test, developability, and adhesion reported in the table were measured using the following methods.

[0172] [Table 1] Table 1 Mixing Example 1 Mixing Example 2 Mixing Example 3 Mixing Example 4 Mixing Example 5 Mixing Example 6 Mixing Example 7 Mixing Example 8 Mixing Example 9 Mixing Example 10 Mixing Example 11 Mixing Example 12 polymer A-1 100 100 A-2 100 A-3 100 A-4 100 B-1 100 B-2 100 100 C-1 100 100 C-2 100 C-3 100 Photopolymerization initiator D-1 4 4 4 4 4 D-2 7 7 7 10 10 10 10 Silane coupling agent E-1 1 1 1 1 2 2 2 2 2 2 1 1 Free radical polymerizable compounds F-1 8 8 8 8 10 10 10 15 15 15 8 40 Fluorine-based monomers G-1 8 8 8 solvent H-1 160 160 160 160 160 160 160 160 160 160 160 160 H-2 40 40 40 40 40 40 40 40 40 40 40 40 Oxygen permeability (cm 3 / m 2·day·atm) 250 320 350 300 330 400 480 600 680 550 120 7300

[0173] The symbols described in Table 1 refer to the following compounds. Photopolymerization initiator D-1: 1,2-Propanedione-3-cyclopentyl-1-[4-(phenylthio)phenyl]-2-(O-benzoyl)oxime (trade name: PBG-305, manufactured by Changzhou Qiangli Electronics Co., Ltd.) D-2: 1-[4-(Phenylthio)phenyl]-3-propane-1,2-dione-2-(O-acetyl oxime) (trade name: PBG-3057, manufactured by Changzhou Qiangli Electronics Co., Ltd.) Silane coupling agent E-1: 3-Glycidyloxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd.) Free radical polymerizable compounds F-1: Polyethylene glycol #200 dimethacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd.) Fluorine-based monomers G-1: 2,2,2-trifluoroethyl methacrylate solvent H-1:γ-butyrolactone (GML) H-2: dimethyl sulfoxide (DMSO)

[0174] (Oxygen permeability) The photosensitive resin composition prepared above was spin-coated onto a 6-inch silicon wafer substrate with an aluminum vapor-deposited layer on its surface to a film thickness of 10 μm after curing. The composition was pre-baked at 110°C for 4 minutes. Subsequently, the wafer was heat-cured at 230°C for 2 hours in a vertical curing oven (Koyo Lindberg, Model VF-2000B) to produce a wafer with a resin film (insulating layer). The wafer was immersed in a dilute hydrochloric acid solution overnight, the resin film was peeled off, and dried. The wafer was cut into 50 mm × 50 mm pieces and processed as samples. The oxygen permeability (cm³ / m²·day·atm) of the sample obtained above was measured according to JIS K-7126-2. The measurement was performed using a GTR-10XF measuring instrument under the following conditions: 23°C, 65% relative humidity (RH), oxygen gas, and a cell diameter of 35 mm.

[0175] (Short-circuit time after BHAST test) A TEG (Test Element Group) with a line / space (L / S) ratio of 5 μm / 5 μm was prepared and treated with oxygen plasma (EXAM, manufactured by Shinko Seiki Co., Ltd.) at 40 mL / min, 133 W, and 50 Pa for 2 minutes. The resin composition was then spin-coated using a coater / developer (D-Spin60A, manufactured by SOKUDO Corporation) and pre-baked on a hot plate at 110°C for 240 seconds to form a coating with a final thickness of 7 μm. Immediately after the coating was formed (here, within 5 minutes of the coating), it was exposed to light at an exposure dose of 300-600 mJ / cm². After development, the sample was heated at 230°C for 2 hours in a ramp-type curing oven (VF-2000, manufactured by Koyo Lindberg) under a nitrogen atmosphere to produce the sample.

[0176] The samples were tested using a BHAST test apparatus (Highly Accelerated Life Tester, ESPEC: EMS-222M, Electrochemical Migration Evaluation System, ESPEC: AMI-025-U-5) at 130°C and 85% RH, with an applied voltage of 1 V. The insulation resistance between the copper wiring arranged within the insulation layer was measured at 30-minute intervals. The point at which the insulation resistance fell below 1×10⁴Ω was considered the point of insulation failure. The time from the start of the test to insulation failure was calculated and evaluated using the following criteria. Excellent: More than 500 hours Good: 200 hours or more but less than 500 hours Yes: More than 24 hours but less than 200 hours "No": Less than 24 hours

[0177] [Example 1] (Fabrication of insulation layers, redistribution layers, and semiconductor devices) A 6-inch silicon wafer (manufactured by Fujimi Electronic Industry Co., Ltd., with a thickness of 625±25 μm) serving as a semiconductor chip was covered with epoxy resin as a molding resin to form a sealing material.

[0178] (Developability) On the bottom surface of the wafer (the surface not covered by the sealant), a 200 nm thick layer of Ti and a 400 nm thick layer of Cu were sputtered in that order using a sputtering apparatus (L-440S-FHL, manufactured by Canon Anelva). The resin composition of Formulation Example 1 was then spin-coated on the wafer using a coater / developer (D-Spin60A, manufactured by Sokudo). This was then pre-baked at 110°C on a hot plate for 180 seconds to form a coating film with a final thickness of 5 μm.

[0179] After the coating was formed (here, within 5 minutes of formation), the film was irradiated with 400 mJ / cm² of energy using a Prisma GHI (manufactured by Ultratech) using a mask with a test pattern. Subsequently, the film was spray-developed using a coater developer (D-Spin 60A, manufactured by SOKUDO) using cyclopentanone as the developer for a time calculated by multiplying the time required for complete dissolution of the unexposed areas by 1.4. Subsequently, a relief pattern (Example 1A) on the Cu substrate was obtained by rotary spray cleaning with propylene glycol methyl ether acetate for 10 seconds (relief pattern formation step). Evaluation was performed using the following criteria. Good: 7 μm guide holes can be formed in this step. "Yes": In this step, a 10 μm guide hole can be formed. "No": Failed to form a guide hole with a diameter of less than 10 μm in this step Furthermore, in the above evaluation, "via formation" means that when a cross-section of the relief pattern is observed using a field emission scanning electron microscope (FE-SEM) S-4800 (manufactured by Hitachi High-Technologies Corporation), no residue, bridges, or skirt-like bottoms are observed at the bottom of the via.

[0180] The wafer with the relief pattern formed on the Cu substrate was heat treated for 2 hours at 230°C in a nitrogen atmosphere using a temperature-programmed curing furnace (VF-2000, manufactured by Koyo Lindberg). This resulted in a cured relief pattern comprising approximately 5 μm of resin on the Cu substrate (insulating layer formation step; first insulating layer). Ti to a thickness of 200 nm and Cu to a thickness of 400 nm were then sputtered onto the resulting relief pattern using the aforementioned sputtering apparatus (wiring formation step; wiring).

[0181] The photosensitive resin composition obtained in Preparation Example 1 was spin-coated onto the sputtered relief pattern using a similar coater / developer (D-Spin 60A, manufactured by SOKUDO Corporation). The composition was then pre-baked at 110°C for 180 seconds on a hot plate to form a coating film. The resulting coating film was heat-treated at 230°C for 2 hours in a nitrogen atmosphere using a ramp-type curing oven (VF-2000, manufactured by Koyo Lindberg Corporation). This resulted in a cured film (second insulating layer) comprising the resin with a thickness of approximately 5 μm, formed on the relief pattern of the cured product of Preparation Example 1. This formed a redistribution layer comprising the first insulating layer, wiring, and the second insulating layer.

[0182] Next, a plurality of external connection terminals (bump formation) corresponding to each semiconductor wafer are formed on the side of the redistribution layer opposite the sealing material, and dicing is performed between the semiconductor wafers to produce the semiconductor device of Example 1. This semiconductor device is a fan-out wafer-level chip scale package type semiconductor device.

[0183] (tightness) For the semiconductor device of Example 1 fabricated above, a cured film (second insulating layer) approximately 5 μm thick formed on the relief pattern of the cured product (first insulating layer) in the redistribution layer was treated at 130°C and 85% RH for 168 hours. The adhesion properties between the copper substrate and the insulating layer (cured resin coating) were then evaluated according to the cross-cut method of JIS K 5600-5-6 based on the following criteria. "Excellent": The lattice number of the insulating layer attached to the substrate is above 80~100 Good: The lattice number of the insulating layer attached to the substrate is greater than 60 and less than 80. "Yes": The lattice number of the insulating layer attached to the substrate is greater than 40 and less than 60 "No": The number of lattices of the insulating layer attached to the substrate is less than 40

[0184] [Examples 2 to 10, Comparative Examples 1 and 2] Using formulations 2 to 12, experiments were conducted in the same manner as in Example 1. The results are shown in the table. Furthermore, for each formulation, the optimal exposure and development time were calculated before production, and each experiment was conducted.

[0185] [Table 2] Table 2 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Comparative Example 1 Comparative Example 2 Insulation layer and redistribution layer Example 1A Example 2A Example 3A Example 4A Example 5A Example 6A Example 7A Example 8A Example 9A Example 10A Comparative Example 1A Comparative Example 2A Mixing Example Mixing Example 1 Mixing Example 2 Mixing Example 3 Mixing Example 4 Mixing Example 5 Mixing Example 6 Mixing Example 7 Mixing Example 8 Mixing Example 9 Mixing Example 10 Mixing Example 11 Mixing Example 12 Short circuit time after BHAST test excellent good good excellent excellent good good Can Can good excellent No Developability Can Can Can Can good good good good good good No No Tightness excellent good good excellent excellent good good Can Can good excellent No

[0186] As is clear from the table, according to the examples, good results were obtained in any of the evaluations of "oxygen permeability", "short-circuit time after BHAST test", "developability", and "adhesion". Furthermore, as is clear from the table, Example 1 using Formulation Example 1 confirmed that the oxygen permeability (cm 3 / m 2·day·atm) can be appropriately controlled by appropriately changing the types and contents of the polymer, fluorine-based monomer, photopolymerization initiator, silane coupling agent, and free radical polymerization initiator. [Industrial Applicability]

[0187] The present invention can be preferably used in a semiconductor device having a semiconductor chip and a redistribution layer connected to the semiconductor chip, especially a fan-out (Fan-Out) type wafer-level chip size packaging type semiconductor device.

[0188] 1: Semiconductor devices 2: Semiconductor wafer 2a: Terminal 3: Sealing material 4 redistribution layer 5: Wiring 6: Insulation layer (interlayer insulation film) 7: External connection terminals 8: Protective layer 8a: Hole 10: Wafer 11: Support 12: Molding resin 13: Photosensitive resin composition A: Arrow direction S1: Area of ​​redistribution layer S2: Area of ​​semiconductor chip

Claims

1. A semiconductor device comprising: a semiconductor wafer; a sealing material covering the semiconductor wafer such that at least a portion of the semiconductor wafer is exposed; and a rewiring layer disposed on the side of the semiconductor wafer not covered by the sealing material, and having a planar area larger than the semiconductor wafer; wherein the rewiring layer comprises: wiring electrically connected to the semiconductor wafer; and an insulating layer having an oxygen permeability of 150 to 680 cm³ / m²·day·atm.

2. The semiconductor device of claim 1, wherein the insulating layer has a layer structure of three or more layers.

3. The semiconductor device of claim 1, wherein the semiconductor chip comprises a plurality of chips.

4. The semiconductor device of claim 1, wherein the sealing material is in contact with the insulating layer.

5. The semiconductor device of claim 1, wherein the sealing material comprises epoxy resin.

6. The semiconductor device of claim 1, wherein the oxygen permeability is 250 to 680 cm3 / m2·day·atm.

7. The semiconductor device of claim 1, wherein the oxygen permeability is 150 to 400 cm3 / m2·day·atm.

8. The semiconductor device of claim 1, wherein the oxygen permeability is 150 to 350 cm3 / m2·day·atm.

9. The semiconductor device of claim 1, wherein the oxygen permeability is 150 to 300 cm3 / m2·day·atm.

10. The semiconductor device of claim 1, wherein the oxygen permeability is 400 to 680 cm3 / m2·day·atm.

11. The semiconductor device of claim 1, wherein the oxygen permeability is 450 to 680 cm3 / m2·day·atm.

12. The semiconductor device of claim 1, wherein the oxygen permeability is 500 to 680 cm3 / m2·day·atm.

13. The semiconductor device of claim 1, wherein the oxygen permeability is 200 to 680 cm3 / m2·day·atm.

14. The semiconductor device of claim 1, wherein the insulating layer comprises at least one element selected from the group consisting of carbon (C), hydrogen (H), nitrogen (N), oxygen (O), silicon (Si), and titanium (Ti).

15. The semiconductor device of claim 1, wherein the insulating layer is free of halogens.

16. The semiconductor device of claim 1, wherein the insulating layer comprises at least one selected from the group consisting of polyimide, polybenzoazole, and polymers having phenolic hydroxyl groups.

17. The semiconductor device of claim 1, wherein the insulating layer comprises polyimide, and the peak height near 1380 cm⁻¹ and the peak height near 1500 cm⁻¹ (peak height near 1380 cm⁻¹ / peak height near 1500 cm⁻¹) during IR spectroscopy measurement by total reflectance measurement (ATR method) is 0.2 to 2.

5.

18. The semiconductor device of claim 1, wherein the semiconductor device arbitrarily includes a protective layer for protecting the semiconductor wafer, and when the semiconductor device includes the protective layer, the protective layer is disposed between the semiconductor wafer and the insulating layer.

19. The semiconductor device of claim 18, wherein the protective layer is in contact with at least one of the semiconductor wafer and the insulating layer.

20. The semiconductor device of claim 18, wherein a hole is formed in the protective layer, and through the hole, the semiconductor wafer is electrically connected to a wiring electrically connected to the semiconductor wafer.

21. The semiconductor device of claim 20, wherein the ratio of the opening area of ​​the aforementioned hole to the semiconductor wafer side of the aforementioned protective layer is less than half.

22. The semiconductor device of claim 18, wherein the protective layer comprises at least one selected from the group consisting of polyimide, polybenzoazole, and polymers having phenolic hydroxyl groups.

23. The semiconductor device of claim 18, wherein the protective layer comprises polyimide, and the peak ratio (peak height near 1380 cm⁻¹ / peak height near 1500 cm⁻¹) of the peak height near 1380 cm⁻¹ to the peak height near 1500 cm⁻¹ during IR spectroscopy measurement by total reflectance measurement (ATR method) is 1.2 to 2.

5.

24. The semiconductor device of claim 18, wherein at least one of the protective layer and the insulating layer comprises a polyimide having a structure containing the following general formula (1), [Chemical 1] (where X1 is a tetravalent organic group derived from tetracarboxylic acid dianhydride, Y1 is a divalent organic group derived from diamine, and m is an integer greater than or equal to 1).

25. The semiconductor device of claim 24, wherein X1 in the above general formula (1) is a tetravalent organic group containing an aromatic ring, and Y1 in the above general formula (1) is a divalent organic group containing an aromatic ring.

26. The semiconductor device of claim 24, wherein X1 in the above general formula (1) includes at least one structure represented by the following general formulas (2) to (5), [Chemical 2] [Chemical 3] [Chemical 4] (where R9 is an oxygen atom, a sulfur atom or a divalent organic group) [Chemical 5].

27. The semiconductor device of claim 26, wherein X1 in the above general formula (1) includes the structure represented by the following general formula (6), [Chemical 6].

28. The semiconductor device of claim 24, wherein Y1 in the above general formula (1) comprises at least one structure represented by the following general formulas (7) to (9): [Chemistry 7] (wherein, R10, R11, R12 and R13 are each independently hydrogen atoms, a monovalent aliphatic group or hydroxyl group having 1 to 5 carbon atoms, and may be the same or different from each other) [Chemistry 8] (wherein, R14 to R21 are each independently hydrogen atoms, halogen atoms, a monovalent organic group or hydroxyl group having 1 to 5 carbon atoms, and may be the same or different from each other) [Chemistry 9] (wherein, R22 is a divalent group or oxygen atom, R23 to R30 are each independently hydrogen atoms, halogen atoms, a monovalent aliphatic group or hydroxyl group having 1 to 5 carbon atoms, and may be the same or different from each other, k is an integer from 1 to 3, and when k is 2 or 3, R22, R23, R24, R27 and R28 may be the same or different from each other).

29. The semiconductor device of claim 24, wherein Y1 in the above formula (1) includes the structure represented by the following general formula (10), [Chemistry 10].

30. The semiconductor device of claim 16, wherein the insulating layer comprises the above-mentioned polybenzoxazole having a structure containing the following general formula (11), [Chemical 11] (where U and V are each independently a divalent organic group).

31. The semiconductor device of claim 30, wherein U in the above general formula (11) is a divalent organic group having 1 to 30 carbon atoms.

32. The semiconductor device of claim 30, wherein U in the above general formula (11) is a chain-like alkyl group having 1 to 8 carbon atoms and one or all of its hydrogen atoms being substituted with fluorine atoms.

33. The semiconductor device of claim 30, wherein V in the above general formula (11) is a divalent organic group having 1 to 40 carbon atoms.

34. The semiconductor device of claim 30, wherein V in the above general formula (11) is a divalent chain aliphatic group with 1 to 20 carbon atoms.

35. The semiconductor device of claim 30, wherein the V group of the above general formula (11) comprises a divalent organic group of an aromatic group.

36. The semiconductor device of claim 30, wherein V of the above general formula (11) includes at least one structure represented by the following general formulas (7) to (9), [Chemical 12] (wherein, R10, R11, R12 and R13 are each independently hydrogen atoms and monovalent aliphatic groups with 1 to 5 carbon atoms, and may be the same or different from each other) [Chemical 13] (wherein, R14 to R21 are each independently hydrogen atoms, halogen atoms and monovalent organic groups with 1 to 5 carbon atoms, and may be the same or different from each other) [Chemical 14] (wherein, R22 is a divalent group or oxygen atom, R23 to R30 are each independently hydrogen atoms, halogen atoms and monovalent aliphatic groups with 1 to 5 carbon atoms, and may be the same or different from each other, k is an integer from 1 to 3, and when k is 2 or 3, R22, R23, R24, R27 and R28 may be the same or different from each other).

37. The semiconductor device of claim 30, wherein V of the above general formula (11) includes the structure represented by the following general formula (10), [Chemistry 15].

38. The semiconductor device of claim 16, wherein the polymer having phenolic hydroxyl groups comprises a phenolic varnish-type phenolic resin.

39. The semiconductor device of claim 16, wherein the polymer having phenolic hydroxyl groups comprises a phenolic resin without unsaturated hydrocarbon groups and a modified phenolic resin having unsaturated hydrocarbon groups.

40. The semiconductor device of claim 1, wherein the insulating layer comprises a first insulating layer and a second insulating layer having a composition different from that of the first insulating layer.

41. A semiconductor device as claimed in any one of claims 1 to 40, wherein the semiconductor device is a fan-out wafer-level chip-scale packaged semiconductor device.

42. A method for manufacturing a semiconductor device, comprising the following steps: a first step of preparing a semiconductor wafer; a second step of covering the prepared semiconductor wafer with a sealing material such that at least a portion of the semiconductor wafer is exposed; and a third step of forming a rewiring layer on the exposed side of the semiconductor wafer, the rewiring layer having a planar area larger than that of the semiconductor wafer; and the rewiring layer comprising an insulating layer having an oxygen permeability of 150 to 680 cm³ / m²·day·atm.

43. A method for manufacturing a semiconductor device as claimed in claim 42, wherein the insulating layer is formed using a photosensitive resin composition capable of forming at least one of a polymer selected from the group consisting of polyimide, polybenzoazole, and polymers having phenolic hydroxyl groups.

44. A method for manufacturing a semiconductor device as claimed in claim 42 or 43, wherein the second step comprises the following steps: forming a protective layer on the semiconductor wafer; and covering the semiconductor wafer on which the protective layer is formed with a sealing material in such a way that at least a portion of the protective layer is exposed; and the third step comprises the following steps: forming the rewiring layer on the side of the protective layer.

45. A method for manufacturing a semiconductor device as claimed in claim 44, wherein the protective layer is formed using a photosensitive resin composition capable of forming at least one of a polymer selected from the group consisting of polyimide, polybenzoazole, and polymers having phenolic hydroxyl groups.

46. ​​An insulating layer for forming a redistribution layer in a semiconductor device comprising: a semiconductor wafer; a sealing material covering the semiconductor wafer such that at least a portion of the semiconductor wafer is exposed; and a redistribution layer disposed on the side of the semiconductor wafer not covered by the sealing material, having a planar area larger than the semiconductor wafer; and the oxygen permeability of the insulating layer being 150 to 680 cm³ / m²·day·atm.

47. A rewiring layer disposed in a semiconductor device comprising: a semiconductor wafer; and a sealing material covering the semiconductor wafer such that at least a portion of the semiconductor wafer is exposed; the rewiring layer being disposed on a side of the semiconductor wafer not covered by the sealing material, and having a planar area larger than the semiconductor wafer; the rewiring layer comprising: wiring electrically connected to the semiconductor wafer; and an insulating layer connected to the wiring, having an oxygen permeability of 150–680 cm³ / m²·day·atm.

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