Substrate processing methods, semiconductor device manufacturing methods, substrate processing apparatus, and computer-readable recording media

Abstract

A technique is provided to suppress substrate handling defects or substrate breakage. It comprises: a step of placing a substrate on a surface of at least a portion of a mounting portion formed by a first member; a step of forming a first film on the surface of the substrate by supplying a first gas, and forming a second film on the surface of the first member having a portion continuous with the first film; and a step of generating stress within the second film caused by the difference in thermal deformation between the first member and the substrate, thereby causing at least a portion of the second film to become discontinuous.

Description

Substrate Processing Method, Method for Manufacturing Semiconductor Device, Substrate Processing Apparatus, and Program The technology of the present invention relates to a substrate processing method, a method for manufacturing a semiconductor device, a substrate processing apparatus, and a program. As one process of the substrate processing process, a process of forming a film on the surface of a substrate placed on a placement part is sometimes performed (see, for example, Patent Document 1). [Prior Art Document] Patent Document Patent Document 1: Japanese Unexamined Patent Application Publication No. 2023-32647 [Problems to be Solved by the Invention] In such substrate processing, a film is formed in such a manner that the surface of the substrate is continuous with the surface of the placement part, and thus sometimes conveyance failure of the substrate or breakage of the substrate occurs. The present invention provides a technology capable of suppressing conveyance failure of the substrate or breakage of the substrate. [Technical Means for Solving the Problem] According to one aspect of the present invention, there is provided a technology having: a process of placing a substrate on a placement part at least a part of the surface of which is constituted by a first member; a process of forming a first film on the surface of the substrate and forming a second film having a part continuous with the first film on the surface of the first member by supplying a first gas; and a process of generating stress caused by a difference in thermal deformation amount between the first member and the substrate inside the second film and making at least a part of the second film discontinuous. [Effects of the Invention] According to the present invention, conveyance failure of the substrate or breakage of the substrate can be suppressed. Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. In addition, the drawings used in the following description are all schematic, and the dimensional relationships, ratios of the respective elements on the drawings do not necessarily conform to the actual situation. Further, among the multiple drawings, the dimensional relationships, ratios of the respective elements do not necessarily conform to each other. (1) Outline of the substrate processing apparatus The substrate processing apparatus described in this embodiment is an apparatus used in the manufacturing process of semiconductor devices, and is an apparatus that heats a substrate to be processed using a heater or the like in a state where the substrate to be processed is accommodated in a processing chamber. As the substrate to be processed by the substrate processing apparatus, for example, a semiconductor wafer substrate on which a semiconductor device (semiconductor Device) is fabricated can be cited. As the semiconductor wafer substrate, for example, a silicon (Si) substrate, a silicon carbide (SiC) substrate, etc. can be cited. In addition, as the processing performed by the substrate processing apparatus, for example, a film formation process based on a thermal CVD (Chemical Vapor Deposition) reaction can be cited. (2) Schematic configuration of the substrate processing apparatus Next, a schematic configuration example of the substrate processing apparatus suitably used in the embodiment of the present invention will be described using FIG. 1. FIG. 1 is a perspective view of the substrate processing apparatus suitably used in the embodiment of the present invention. (Overall device) The substrate processing apparatus 200 has a chamber 202. The chamber 202 is configured as a sealed container having, for example, a circular and flat cross-section. In addition, the chamber 202 is made of a metal material such as aluminum (Al) or stainless steel (SUS). The chamber 202 includes a processing chamber 205 and a transfer chamber 206. In addition, the processing chamber 205 is a space for processing a substrate S such as a silicon substrate as the substrate. In addition, the transfer chamber 206 is a space through which the substrate S passes when the substrate S is transferred to the processing chamber 205. In addition, the chamber 202 is composed of an upper container 202a and a lower container 202b. A partition 204 is provided between the upper container 202a and the lower container 202b. In addition, the processing chamber 205 is formed, for example, above the upper part of the chamber 202, above the lower surface 204a of the partition 204. The processing chamber 205 is mainly composed of the upper container 202a, the partition 204, and a substrate mounting table 210 (details will be described later) that moves to the processing position. In addition, the transfer chamber 206 is formed, for example, below the lower part of the chamber 202, below the lower surface 204a of the partition 204. The transfer chamber 206 is mainly composed of the lower container 202b, the partition 204, and a substrate mounting table 210 that moves to the transfer position. On the side surface of the lower container 202b, a substrate loading / unloading port 208 adjacent to the gate valve 209 is provided. The substrate S moves between the lower container 202b and a vacuum transfer chamber (not shown) via the substrate loading / unloading port 208. A lifting pin 207 is provided on the bottom wall of the lower container 202b. In addition, the lower container 202b is grounded. The substrate mounting table 210 is a member that mounts the substrate S and heats the mounted substrate S.In addition, the substrate mounting table 210 is an example of the mounting portion in the present invention. The substrate mounting table 210 mainly has a substrate mounting surface 211 and a heater 213. The substrate mounting surface 211 is provided on the surface of the substrate mounting table 210 (the upper surface in FIG. 1), and is the part for mounting the substrate S. In addition, in the present embodiment, although the entire surface of the substrate mounting table 210 is used as the substrate mounting surface 211, the present invention is not limited thereto. Further, at least a part of the substrate mounting surface 211 is constituted by the first member 212. In addition, in the present embodiment, as shown in FIGS. 2A and 2B, although a part of the substrate mounting surface 211 is constituted by the first member 212, the present invention is not limited thereto. For example, the entire substrate mounting surface 211 may be constituted by the first member 212. In addition, in the present embodiment, when the substrate S is mounted on the substrate mounting surface 211, the first member 212 contacts the substrate S. Specifically, the first member 212 contacts the outer peripheral edge portion Se (see FIG. 4C) of the substrate S. In addition, the outer peripheral edge portion Se shown in FIG. 4C refers to the edge portion on the substrate mounting surface 211 side among the outer peripheral edge portions Se of the substrate S. In other words, in the present embodiment, when the substrate S is mounted on the substrate mounting surface 211, the position of the first member 212 relative to the substrate mounting surface 211 is set such that the first member 212 contacts the outer peripheral edge portion Se of the substrate S. In addition, in the present embodiment, the position of the first member 212 relative to the substrate mounting surface 211 is set such that "in the portion where the substrate S contacts the first member 212, the direction of thermal deformation of the first member 212 has a component opposite to the direction of thermal deformation of the substrate S". Specifically, the position of the first member 212 is set such that "the substrate S thermally deforms toward the center of the substrate S, and the first member 212 thermally deforms in a direction opposite to the direction toward the center of the substrate S". As an example, in the present embodiment, as shown in FIG. 4B, in the cross section of the first member 212, the position of the first member 212 is determined such that the outer peripheral edge portion Se of the mounted substrate S is located on the inner peripheral side with respect to the center in the width direction of the first member 212. Therefore, in the cross section of the first member 212, the inner peripheral side is wider than the center in the width direction and thermally deforms (thermal contraction) in a direction opposite to the direction toward the center of the substrate S. Specifically, in the cross section of the first member 212, the inner peripheral side portion and the outer peripheral side portion thermally contract toward the center in the width direction. As shown in FIG. 2A, an annular recess is provided in the upper part of the substrate mounting table 210, and a plate-shaped first member 212 is annularly embedded in the recess. The first member 212 is formed of a material different from that of the substrate mounting table 210. Specifically, the substrate mounting table 210 and the first member 212 are respectively formed of materials that produce differences in thermal deformation amount (materials with different thermal expansion coefficients). In addition, the so-called thermal deformation amount here is an expression including the deformation amount caused by thermal expansion and the deformation amount caused by thermal contraction.As shown in FIG. 2B, although the first member 212 of the present embodiment is an integrally formed member, the present invention is not limited thereto. For example, the first member 212 may also be composed of a plurality of members formed of the same material. In addition, the first member 212 may also be composed of a plurality of members formed of different materials, and may also be a member formed by integrally molding different materials. The heater 213 is included in the substrate mounting table 210. The heater 213 has a function of heating the substrate S through the substrate mounting table 210. The heater 213 is an example of the heating unit of the present invention. In addition, a temperature control unit 220 for controlling the temperature of the heater 213 is connected to the heater 213. The substrate S is heated by the heat from the heater 213. The temperature adjustment mechanism 225 is mainly composed of the heater 213 and the temperature control unit 220. The temperature of at least one of the substrate S and the substrate mounting table 210 can be changed by the temperature adjustment mechanism 225. In addition, in the present embodiment, the substrate mounting table 210 is heated by the heat from the heater 213. Further, the substrate S placed on the substrate mounting surface 211 of the heated substrate mounting table 210 is heated. In addition, in the substrate mounting table 210, through holes 214 for the lifting pins 207 to penetrate are respectively provided at positions corresponding to the lifting pins 207. The substrate mounting table 210 is supported by a shaft 217. The lower end portion of the shaft 217 penetrates through a through hole 215 provided in the bottom wall of the lower container 202b. In addition, a support plate 216 is provided at the lower end portion of the shaft 217. The shaft 217 is connected to the lifting mechanism 218 outside the chamber 202 (the lower side in FIG. 1) via the support plate 216. Therefore, by operating the lifting mechanism 218, the shaft 217 and the substrate mounting table 210 are lifted and lowered, so that the substrate S placed on the substrate mounting surface 211 is lifted and lowered. In addition, the periphery of the lower end portion of the shaft 217 is covered by a bellows 219. Thus, the inside of the chamber 202 is hermetically maintained. When processing the substrate S, as shown in FIG. 1, in the substrate mounting table 210, the substrate S rises to the processing position disposed in the processing chamber 205. In addition, in a state where the substrate mounting table 210 is at the processing position, the substrate S is located above the lower surface 204a of the partition plate 204. In addition, when transporting the substrate S, the substrate mounting table 210 descends to a transport position where the substrate S is disposed in the transport chamber 206 and the substrate mounting surface 211 faces the substrate loading / unloading port 208. The lifting pins 207 are connected to the lifting mechanism 318 outside the chamber 202 via the support plate 316. By operating the lifting mechanism 318, the lifting pins 207 are lifted and lowered. By operating the lifting mechanism 318 and making the front end portion of the lifting pin 207 protrude from the upper surface of the substrate mounting surface 211, the front end portion of the lifting pin 207 can support the substrate S from below. In addition, by operating the lifting mechanism 318 and burying the front end portion of the lifting pin 207 inside the through hole 214, the through hole 214 can be blocked by the front end portion of the lifting pin 207.The upper container 202a is provided with a showerhead 222 at the top. A gas supply unit described later is connected to the showerhead 222. Specifically, a common gas supply pipe 242 is connected to the showerhead 222, and each gas supplied into the showerhead 222 is supplied to the processing chamber 205. (Gas supply unit) Next, the gas supply unit will be described. A first gas supply pipe 243a, a second gas supply pipe 247a, and a third gas supply pipe 249a are connected to the common gas supply pipe 242. (First gas supply system) The first processing gas is mainly supplied from the first gas supply system 243 including the first gas supply pipe 243a. Upstream of the first gas supply pipe 243a, a first gas supply source 243b, a mass flow controller (MFC) 243c as a flow controller (flow control unit), and a valve 243d as an on-off valve are provided in sequence from the upstream direction. In order to make the first processing gas into a plasma state, a remote plasma unit (RPU) 243e as a plasma generation unit is provided downstream of the valve 243d. And the first gas is supplied from the first gas supply pipe 243a via the MFC 243c, the valve 243d, and the common gas supply pipe 242 into the showerhead 222. The first processing gas becomes a plasma state through the RPU 243e. The first processing gas is one of the processing gases and is an oxygen-containing gas. As the oxygen-containing gas, for example, oxygen (O 2 ) gas. The first gas supply system 243 is mainly composed of the first gas supply pipe 243a, the MFC 243c, the valve 243d, and the RPU 243e. In addition, the first gas supply system 243 may also include a second gas supply source 247b and a hydrogen-containing gas supply system described later. Downstream of the valve 243d on the first gas supply pipe 243a, the downstream end of a hydrogen-containing gas supply pipe 245a is connected. On the hydrogen-containing gas supply pipe 245a, a hydrogen-containing gas supply source 245b, an MFC 245c as a flow controller (flow control unit), and a valve 245d as an on-off valve are provided in sequence from the upstream direction. And the hydrogen-containing gas is supplied from the hydrogen-containing gas supply pipe 245a via the MFC 245c, the valve 245d, the first gas supply pipe 243a, and the RPU 243e into the showerhead 222. As the hydrogen-containing gas, for example, hydrogen (H 2 ) gas or water (H 2O) Gas. The hydrogen-containing gas supply system mainly consists of a hydrogen-containing gas supply pipe 245a, an MFC 245c, and a valve 245d. In addition, the hydrogen-containing gas supply system may also be considered to include a hydrogen-containing gas supply source 245b, a first gas supply pipe 243a, and an RPU 243e. Additionally, the hydrogen-containing gas supply system may also be included in the first gas supply system 243. (Second Gas Supply System) The second processing gas is mainly supplied from the second gas supply system 247 including the second gas supply pipe 247a. On the second gas supply pipe 247a, a second gas supply source 247b, an MFC 247c as a flow controller (flow control unit), and a valve 247d as an on-off valve are sequentially arranged from the upstream direction. The gas containing the second element (hereinafter, "second processing gas") is supplied from the second gas supply pipe 247a to the shower head 222 via the MFC 247c, the valve 247d, and the common gas supply pipe 242. The second processing gas is, for example, a processing gas containing silicon (Si). That is, the second processing gas is, for example, a silicon-containing gas. As the silicon-containing gas, for example, silane-based gases such as silane (SiH 4 ) gas, disilane (Si 2 H 6 ) gas, and trisilane (Si 3 H 8 ) gas can be used. Additionally, as the silicon-containing gas containing impurities such as a carbon component or a boron component, for example, tetraethyl orthosilicate (Si(OC 2 H 5 ) 4 . Also known as TEOS.) gas, etc. can be used. In addition, the aforementioned first processing gas and second processing gas are an example of the first gas of the present invention. The second gas supply system 247 (also referred to as a silicon-containing gas supply system) mainly consists of the second gas supply pipe 247a, the MFC 247c, and the valve 247d. (Third Gas Supply System) The third gas supply system 249 including the third gas supply pipe 249a mainly supplies an inert gas. On the third gas supply pipe 249a, a third gas source 249b, an MFC 249c as a flow controller (flow control unit), and a valve 249d as an on-off valve are sequentially arranged from the upstream direction. The third gas source 249b is an inert gas source. The inert gas is, for example, nitrogen (N 2) Gas. In addition, the inert gas is an example of the second gas of the present invention. The heat conductivity of the inert gas is higher than that of the first processing gas and the second processing gas. The third gas supply system 249 is mainly composed of a third gas supply pipe 249a, an MFC 249c, and a valve 249d. The inert gas supplied from the third gas source 249b is used as a purge gas for purging the gas remaining in the chamber 202 or the shower head 222 during the substrate processing step. (Exhaust section) The exhaust section for exhausting the atmosphere of the chamber 202 is mainly composed of an exhaust section 261 for exhausting the atmosphere of the processing chamber 205. The exhaust section 261 has an exhaust pipe 261a connected to the processing chamber 205. The exhaust pipe 261a is provided in a manner communicating with the processing chamber 205. An APC (Auto Pressure Controller) 261c, which is a pressure controller for controlling the inside of the processing chamber 205 to a predetermined pressure, and a pressure detection section 261d for measuring the pressure of the processing chamber 205 are provided on the exhaust pipe 261a. The APC 261c has a valve body (not shown) whose opening degree can be adjusted, and adjusts the flow conductance of the exhaust pipe 261a according to an instruction from a controller 280 described later. In addition, a valve 261b is provided on the upstream side of the APC 261c in the exhaust pipe 261a. The exhaust pipe 261a, the valve 261b, the APC 261c, and the pressure detection section 261d are collectively referred to as the exhaust section 261. A dry pump 263 is provided on the downstream side of the exhaust pipe 261a. The dry pump 263 exhausts the atmosphere of the processing chamber 205 via the exhaust pipe 261a. The film forming mechanism 265 is mainly composed of a first gas supply system 243, a second gas supply system 247, and a third gas supply system 249. In addition, the exhaust section 261 may be included in the film forming mechanism 265. (Controller) Next, the controller 280 that controls the operations of the respective parts of the substrate processing apparatus 200 will be described with reference to FIG. 3. In addition, the controller 280 is an example of the control section of the present invention. FIG. 3 is a diagram for explaining the controller 280 of the substrate processing apparatus 200. The substrate processing apparatus 200 has a controller 280 that controls the operations of the respective parts of the substrate processing apparatus 200. As shown in FIG. 3, the controller 280 at least includes an arithmetic unit (CPU) 280a, a temporary storage unit 280b, a storage unit 280c, and a transmission / reception unit 280d. The controller 280 is connected to the respective parts of the substrate processing apparatus 200 via the transmission / reception unit 280d, reads out a program or a recipe from the storage unit 280c according to an instruction from a host controller or a user, and controls the operations of the respective parts according to the content thereof. The respective parts of the substrate processing apparatus 200 include a lift mechanism 218 and a lift mechanism 318. The controller 280 is configured to be able to control the operations of the lift mechanism 218 and the lift mechanism 318 by executing a program describing the steps for implementing each step in the substrate processing step.In addition, the controller 280 can be configured as a dedicated computer or a general-purpose computer. For example, an external memory device (such as magnetic disks like magnetic tapes, floppy disks, or hard disks, optical disks like CDs or DVDs, magneto-optical disks like MOs, semiconductor memories like USB memory (USB Flash Drive) or memory cards) 282 storing the above program is prepared, and by installing the program into a general-purpose computer using the external memory device 282, the controller 280 according to this embodiment can be configured. In addition, the means for supplying the program to the computer is not limited to the case of supplying through the external memory device 282. For example, communication means such as the Internet or dedicated lines can be used, or it can also be set to receive information from the upper device 270 through the transmission and reception unit 283 and supply the program without going through the external memory device 282. In addition, instructions can also be issued to the controller 280 using an input / output device 281 such as a keyboard or a touch panel. In addition, the memory unit 280c or the external memory device 282 is configured as a computer-readable memory medium. Hereinafter, they will also be simply collectively referred to as memory media. In addition, in this specification, the case of using the term memory medium includes the case of only including the memory unit 280c alone, the case of only including the external memory device 282 alone, or the case of including both. (Substrate processing process) Next, one process of the semiconductor manufacturing process will be described. Here, the film formation process of forming a carbon-containing SiO film on the Si substrate S will be described. 2 The film formation process of forming a film will be described. (Substrate loading process) In the substrate processing apparatus 200 of FIG. 1, the gate valve 209 is opened, and the substrate S is loaded into the lower container 202b of the chamber 202, that is, the transfer chamber 206, from the substrate loading and unloading port 208. The substrate S is placed on the front ends of a plurality of lift pins 207 protruding from the substrate placement surface 211. The gate valve 209 is closed. Then, the substrate placement table 210 rises, and the substrate S is placed on the substrate placement surface 211. And the substrate placement table 210 stops at the processing position. Next, the plurality of lift pins 207 move within the through holes 214 to a position where they cannot touch the substrate S. In addition, when the substrate S is placed on the substrate placement surface 211, the first member 212 contacts the substrate S. Specifically, the first member 212 contacts the outer peripheral edge portion Se (see FIG. 4C) of the substrate S. (Film formation process) After heating the substrate S to a predetermined temperature in the state where the substrate S is in the processing chamber 205, a silicon-containing gas and an oxygen-containing gas are supplied to the processing chamber. The silicon-containing gas contains impurities such as a carbon component or a boron component. As the silicon-containing gas, for example, TEOS gas can be used. As the oxygen-containing gas, for example, oxygen (O 2 ) gas can be used. The TEOS gas supplied to the processing chamber reacts with O 2The gases react with each other to form a film F on the substrate S. Specifically, as shown in FIG. 4A, the film F is formed on the surface Sa of the substrate S and the substrate mounting surface 211 around the surface Sa. In addition, the film formed on the surface Sa of the substrate S among the films F is referred to as the first film F1. Further, the film formed on the substrate mounting surface 211 around the surface Sa of the substrate S among the films F is referred to as the second film F2. In addition, in the present embodiment, a part of the substrate mounting surface 211 is formed by the first member 212. Therefore, the second film F2 is formed on the surface 212a of the first member 212. Further, the second film F2 has a portion continuous with the first film F1. The portion of the second film F2 that is continuous with the first film F1 is the portion formed along the outer peripheral surface of the substrate S in the example shown in FIG. 4B. The film F formed on the substrate S is a carbon-containing SiO 2 film, the silicon and carbon components contained in the TEOS gas, and the oxygen component of the O 2 gas-containing carbon SiO 2 film. In addition, as the silicon-containing gas, a gas containing a silicon component and a boron component may also be used. In this case, a boron-containing SiO 2 film containing a boron component instead of a carbon component is formed. After a predetermined time, a carbon-containing SiO with a desired film thickness is formed on the substrate S 2After the film formation, the supply of each processing gas is stopped. (Cooling step) After the supply of each processing gas is stopped, the temperature of the substrate S and / or the first member 212 (the temperature in the processing chamber 205) is made lower than the temperature in the film formation step. For example, by making the output of the heater 213 smaller than the output in the film formation step or making the output zero, the temperature in the processing chamber 205 is reduced. Alternatively, it may be configured to supply an inert gas from the third gas supply system 249 to the processing chamber 205 to reduce the temperature in the processing chamber 205. That is, it may be configured to reduce the temperature in the processing chamber 205 and the temperatures of the substrate S and the first member 212 by supplying an inert gas. When the temperatures of the substrate S and the first member 212 are reduced, as shown in FIG. 4C, stress is generated inside the second film F2 due to the difference in the thermal deformation amounts of the first member 212 and the substrate S. For example, the stress caused by the difference in the thermal deformation amounts of the first member 212 and the substrate S is mainly concentrated in the bent portion of the second film F2. In addition, in FIG. 4C, the bent portion of the second film F2 refers to the boundary portion between the portion formed along the surface 212a of the first member 212 and the portion formed along the outer peripheral surface of the substrate S. In FIG. 4C, the boundary portion is shown by a dashed line. When the stress generated inside the second film F2 becomes equal to or greater than a predetermined value, at least a part of the portion of the second film F2 surrounding the substrate S becomes discontinuous. Specifically, as shown in FIG. 4D, the portion where the stress of the second film F2 is concentrated breaks. One or more such broken portions are formed in the portion of the second film F2 surrounding the substrate S. That is, the cooling step of the present embodiment is an example of a step of generating stress inside the second film F2 due to the difference in the thermal deformation amounts of the first member 212 and the substrate S and making at least a part of the portion of the second film F2 surrounding the substrate S discontinuous. Here, FIGS. 5A, 5B, 6A, 6B, 7A, 7B, 8A, and 8B are used to illustrate the pattern when a discontinuous portion is formed in the second film F2. Here, the arrows shown in these figures schematically indicate the directions and magnitudes of the respective thermal deformation amounts of the substrate S or the first member 212. In addition, among the arrows shown in these figures, since only one side of the substrate S is shown, the arrow indicating the thermal deformation amount of the substrate S only shows one side. The example shown in FIG. 5A shows a pattern in which the coefficient of thermal expansion of the first member 212 is smaller than that of the substrate S. In the pattern of FIG. 5A, since the thermal deformation amount of the first member 212 is smaller than the thermal deformation amount of the substrate S, the arrow indicating the thermal deformation amount of the first member 212 is shorter than the arrow indicating the thermal deformation amount of the substrate S. In the case of the pattern of FIG. 5A where the thermal deformation amount of the first member 212 is smaller than the thermal deformation amount of the substrate S, as shown in FIG. 5B, tensile stress is concentrated in the above-mentioned boundary portion of the second film F2, and the second film F2 breaks and becomes discontinuous.The example shown in Fig. 6A shows a pattern in which the coefficient of thermal expansion of the first member 212 is greater than that of the substrate S. In the pattern of Fig. 6A, since the thermal deformation amount of the first member 212 is greater than that of the substrate S, the arrow indicating the thermal deformation amount of the first member 212 is longer than the arrow indicating the thermal deformation amount of the substrate S. In the case of the pattern of Fig. 6A where the thermal deformation amount of the first member 212 is greater than that of the substrate S, as shown in Fig. 6B, tensile stress is concentrated in the above-mentioned boundary portion of the second film F2, and the second film F2 will rupture and become discontinuous. In addition, tensile stress is also concentrated near the outer peripheral edge portion of the substrate mounting surface 211 of the second film F2, and the second film F2 will rupture and become discontinuous. The example shown in Fig. 7A is an example in which the first member 212 is formed on the entire substrate mounting surface 211, and shows a pattern in which the coefficient of thermal expansion of the first member 212 is smaller than that of the substrate S. In the pattern of Fig. 7A, since the thermal deformation amount of the first member 212 is smaller than that of the substrate S, the arrow indicating the thermal deformation amount of the first member 212 is shorter than the arrow indicating the thermal deformation amount of the substrate S. In the case of the pattern of Fig. 7A where the thermal deformation amount of the first member 212 is smaller than that of the substrate S, as shown in Fig. 7B, tensile stress is concentrated in the above-mentioned boundary portion of the second film F2, and the second film F2 will rupture and become discontinuous. That is, in the example of Fig. 7A, the same part as in the example of Fig. 5A will rupture. The example shown in Fig. 8A is an example in which the first member 212 is formed on the entire substrate mounting surface 211, and shows a pattern in which the coefficient of thermal expansion of the first member 212 is greater than that of the substrate S. In the pattern of Fig. 8A, since the thermal deformation amount of the first member 212 is greater than that of the substrate S, the arrow indicating the thermal deformation amount of the first member 212 is longer than the arrow indicating the thermal deformation amount of the substrate S. In the case of the pattern of Fig. 8A where the thermal deformation amount of the first member 212 is greater than that of the substrate S, as shown in Fig. 8B, in the above-mentioned boundary portion of the second film F2, the second film F2 will rupture and become discontinuous. In the cases of the examples of Fig. 5A, Fig. 6A, and Fig. 7A, the second film F2 ruptures due to the tensile stress generated in the boundary portion of the second film F2, but in the case of the example of Fig. 8A, the second film F2 ruptures due to the shear stress generated in the boundary portion of the second film F2. When the coefficient of thermal expansion of the first member 212 is smaller than that of the substrate S, as the material of the first member 212, for example, a material having a covalent bond can be used. As a material having a covalent bond, for example, ceramic materials such as silicon oxide, silicon carbide, aluminum nitride, aluminum oxide, zirconium oxide, yttrium oxide, and silicon nitride can be used. When the coefficient of thermal expansion of the first member 212 is greater than that of the substrate S, as the material of the first member 212, for example, a metal material or a polymer material can be used. As a metal material, for example, aluminum, iron, titanium, niobium, molybdenum, tantalum, tungsten, rhenium, and alloys formed by adding other elements to these metals can be used.In addition, as the polymer material, polystyrene, polycarbonate, polyimide, etc. can be used. Among the above materials, it is preferable to use the material with a large difference in the coefficient of thermal expansion from the substrate S as the material of the first member 212. In addition, among the above materials, it is preferable to use the material that is thermally and chemically stable in the substrate processing step as the material of the first member 212. (Substrate unloading process) When the cooling of the substrate S is completed, the substrate stage 210 descends to the transfer position. At this time, the substrate S is placed on the front ends of a plurality of lift pins 207 protruding from the surface of the substrate stage 210. Then, the gate valve 209 of the substrate processing apparatus 200 is opened, and the substrate S in the chamber 202 is unloaded to the outside of the chamber 202 through the substrate loading / unloading port 208. Then, the gate valve 209 is closed, and the substrate processing step is completed. The unloaded substrate S is transferred to the next processing step. Next, the operation of this embodiment will be described. In this embodiment, in the cooling step, as shown in FIG. 4C, stress caused by the difference in the thermal deformation amount between the first member 212 and the substrate S is generated inside the second film F2, and at least a part of the portion of the second film F2 surrounding the substrate S becomes discontinuous. That is, as shown in FIG. 4D, by rupturing the portion where stress is concentrated in the second film F2, a discontinuous portion is formed in the second film F2. Thereby, it is possible to suppress conveyance defects accompanying position deviation when the substrate S is conveyed from the substrate stage 210 due to the continuity of the first film F1 and the second film F2, or breakage of the substrate S when the substrate S is lifted from the substrate placement surface 211. In addition, in this embodiment, the first member 212 is in contact with the substrate S in a state where the substrate S is placed on the substrate placement surface 211. Thus, compared with the case where the first member 212 is not in contact with the substrate S, it is possible to suppress the second film F2 from becoming discontinuous at a position away from the outer peripheral edge Se of the substrate S. Therefore, it is possible to suppress a part of the second film F2 attached to the outer peripheral edge Se of the substrate S from peeling off during conveyance of the substrate S or the like and becoming particles. In addition, in this embodiment, the first member 212 is in contact with the outer peripheral edge Se of the substrate S in a state where the substrate S is placed on the substrate placement surface 211. Thus, since a portion where stress is likely to be concentrated in the second film F2 is formed as shown in FIG. 4D, it is easy to make the continuous portion between the surface Sa of the substrate S and the surface 212a of the first member 212 discontinuous. In addition, in this embodiment, by supplying the second gas into the processing chamber 205 in the cooling step, the temperature of at least one of the substrate S and the first member 212 is reduced in a shorter time, and a discontinuous portion is formed in the second film F2. Thus, since the second gas is supplied to promote the thermal deformation of the first member 212 and the substrate S, it is possible to shorten the time for forming a discontinuous portion in the second film F2. In addition, in this embodiment, an inert gas is used as the second gas in the cooling step.Thus, by supplying an inert gas to the second film F2, it is possible to lower the temperature of the substrate S or the first member 212 without deteriorating the film. In addition, in the present embodiment, in the cooling process, a gas having a higher thermal conductivity than the first gas is used as the second gas. Therefore, it is possible to lower the temperature of at least one of the substrate S and the first member 212 in a shorter time, and further shorten the time for forming a discontinuous portion in the second film F2. Here, as the gas having a higher thermal conductivity than the first gas, for example, a gas having a smaller molecular weight of gas molecules per unit volume than the first gas can be used. In addition, in the present embodiment, in the cooling process, the first member 212 is placed on the substrate placement surface 211 such that the direction of thermal deformation of the first member 212 in the portion where the substrate S and the first member 212 are in contact has a component opposite to the direction of thermal deformation of the substrate S. Thus, by arranging the first member 212, it is possible to increase the stress generated inside the second film F2 due to the difference in thermal deformation amounts between the first member 212 and the substrate S. Thereby, it is possible to further shorten the time for forming a discontinuous portion in the second film F2. In the foregoing embodiment, although in the cooling process, the temperature in the processing chamber 205 is lowered with an inert gas to form a discontinuous portion in the second film F2, the present invention is not limited thereto. For example, as in the example shown in FIG. 9, the substrate placement table 410 has a flow path 412 configured to allow a refrigerant to flow therethrough. In the cooling process, by supplying the refrigerant to these flow paths 412, it is possible to lower the temperature of at least one of the substrate S and the first member 212 below the temperature in the film formation process. Thus, by providing the flow path 412 in the substrate placement table 410, it is possible to promote the thermal deformation of the first member 212 and the substrate S. Thereby, it is possible to further shorten the time for forming a discontinuous portion in the second film F2. In addition, in the substrate placement table 410, the flow path 412 is provided on the side (i.e., the outer periphery) of the heater 213. Thus, by providing the flow path 412 on the side of the heater 213, it is possible to prevent the heating of the substrate S from being hindered by the flow path 412. In addition, in the substrate placement table 410, the first member 212 is arranged above the flow path 412. Thus, by arranging the first member 212 above the flow path 412, it is possible to prevent the heating of the substrate S from being hindered and at the same time promote the thermal deformation of the first member 212. In addition, it is also possible to supply an inert gas to the processing chamber 205 together with the supply of the refrigerant to the flow path 412. By using the refrigerant and the inert gas for cooling, it is possible to efficiently form a discontinuous portion in the second film F2. In the foregoing embodiment, although in the cooling process, a discontinuous portion is formed in the second film F2 by cooling at least one of the substrate S and the first member 212, the present invention is not limited thereto. For example, as in the example shown in FIG. 10, after a film F is formed on the surface Sa of the substrate S, the substrate placement table 210 and the substrate S are heated by the heater 213.In this case, the substrate S thermally deforms in a direction opposite to the direction toward the center of the substrate S, and the first member 212 thermally deforms toward the center of the substrate S, for example. Specifically, in the cross-section of the first member 212, the inner peripheral side thermally deforms (thermal expansion) toward the center of the substrate S from the center in the width direction. In this case as well, a discontinuous portion can be formed in the second film F2 in the same manner as in the above-described manner. In the above-described embodiment, although one first member 212 constitutes a part of the substrate placement surface 211, the present invention is not limited thereto. For example, as in the example shown in FIG. 11, at least a part of the substrate placement surface 511 of the substrate placement table 510 may be constituted by a plurality of first members. Specifically, a part of the substrate placement surface 511 may be constituted by four first members 512a, 512b, 512c, and 512d. Thus, by constituting at least a part of the substrate placement surface 511 of the substrate placement table 510 by a plurality of first members 512a, 512b, 512c, and 512d, the stress caused by the difference in the thermal deformation amounts between each first member and the substrate S generated inside the second film F2 can be increased. Additionally, the plurality of first members may thermally deform independently of each other. Specifically, the thermal deformation amounts of the plurality of first members 512a, 512b, 512c, and 512d may be different from each other. Thus, by causing the plurality of first members to thermally deform independently of each other, the stress caused by the difference in the thermal deformation amounts between each first member and the substrate S generated inside the second film F2 can be further increased. Additionally, the plurality of first members may have a set of first members such that "relative to a certain first member, another first member is located at a position facing each other with the substrate S interposed therebetween". Thus, by arranging a set of first members at positions facing each other with the substrate S interposed therebetween, the stress caused by the difference in the thermal deformation amounts between each first member and the substrate S generated inside the second film F2 can be further increased. In the above-described embodiment, carbon-containing SiO is formed on the substrate. 2A film, but the present invention is not limited thereto. For example, it can also be set to form a film mainly composed of a predetermined first element on a substrate. As the first element, for example, one or more of the following can be used: calcium (Ca), strontium (Sr) as Group 2 elements; scandium (Sc), yttrium (Y), lanthanide elements, actinide elements as Group 3 elements; titanium (Ti), zirconium (Zr), hafnium (Hf) as Group 4 elements; vanadium (V), niobium (Nb), tantalum (Ta) as Group 5 elements; chromium (Cr), molybdenum (Mo), tungsten (W) as Group 6 elements; manganese (Mn), technetium (Tc), rhenium (Re) as Group 7 elements; iron (Fe), ruthenium (Ru), osmium (Os) as Group 8 elements; cobalt (Co), rhodium (Rh), iridium (Ir) as Group 9 elements; nickel (Ni), palladium (Pd), platinum (Pt) as Group 10 elements; copper (Cu), silver (Ag), gold (Au) as Group 11 elements; zinc (Zn) as Group 12 elements; aluminum (Al), gallium (Ga), indium (In) as Group 13 elements; carbon (C), Si, germanium (Ge), etc. as Group 14 elements. In addition, for example, it can also be set to form a film mainly composed of the above first element and a predetermined second element on a substrate. As the second element, for example, one or more of the following can be used: boron (B) as Group 13 elements; nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb) as Group 15 elements; oxygen (O), sulfur (S), selenium (Se), etc. as Group 16 elements. In the foregoing embodiment, although the first processing gas and the second processing gas are used as an example of the first gas, the present invention is not limited thereto. Only one of the first processing gas or the second processing gas can also be used as the first gas. In addition, in the foregoing embodiment, although an oxygen-containing gas is used as an example of the first processing gas and a silicon-containing gas is used as an example of the second processing gas, a carbon-containing SiO 2A film, but the present invention is not limited thereto. As the first gas, for example, one or more of a gas containing the first element as a gas containing the above-mentioned first element, a gas containing the second element as a gas containing the above-mentioned second element, etc. can be used. In the foregoing embodiment, an example of forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at a time has been described. However, the present invention is not limited to the foregoing embodiment. For example, when forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time, it can also be suitably applied. For example, the placement part in the present invention may also be a cassette configured to be able to place a plurality of substrates S (for example, 2 or more and 300 or less substrates S), and at least a part of the surface of the cassette may be constituted by a first member. In addition, in the foregoing embodiment, an example of forming a film using a substrate processing apparatus having a cold-wall type processing furnace has been described. The present invention is not limited to the foregoing embodiment, and it can also be suitably applied when forming a film using a substrate processing apparatus having a hot-wall type processing furnace. When using these substrate processing apparatuses, each process can also be performed under the same processing steps and processing conditions as in the foregoing embodiment, so that the same effects as those of the above-described mode or modified example can be obtained. As described above, it has been specifically described based on the embodiment or modified example, but the present invention is not limited to the above-described embodiment or modified example, and various changes can of course be made. In addition, the above-described embodiment or modified example can be used in appropriate combination. The processing steps and processing conditions at this time can be set to be the same as those of the processing steps and processing conditions of the above-described embodiment or modified example, for example. 200: Substrate processing apparatus 210: Substrate placement table (an example of the placement part) 211: Substrate placement surface (an example of the surface of the placement part) 212: First member 212a: Surface 213: Heater (an example of the heating part) 225: Temperature adjustment mechanism 265: Film formation mechanism 280: Controller (an example of the control part) 410: Substrate placement table (an example of the placement part) 412: Flow path 510: Substrate placement table (an example of the placement part) 511: Substrate placement surface (an example of the surface of the placement part) 512a: First member F1: First film F2: Second film S: Substrate Sa: Surface Se: Outer peripheral edge part (an example of the edge part) [Fig. 1] Fig. 1 is a longitudinal sectional view of a substrate processing apparatus used in an embodiment of the present invention. [Fig. 2A] Fig. 2A is an enlarged sectional view of the mounting portion of the substrate processing apparatus shown in Fig. 1. [Fig. 2B] Fig. 2B is a top view of the mounting portion shown in Fig. 2A. [Fig. 3] Fig. 3 is a view for explaining the state of a substrate mounting table and lifting pins according to an embodiment of the present invention. [Fig. 4A] Fig. 4A is a sectional view of the mounting portion showing a state where a film is formed on a substrate (a sectional view corresponding to Fig. 2A). [Fig. 4B] Fig. 4B is an enlarged view of the portion indicated by arrow 4B in Fig. 4A. [Fig. 4C] Fig. 4C is an enlarged view of the portion indicated by arrow 4C in Fig. 4B. [Fig. 4D] Fig. 4D is a sectional view showing a state where the second film becomes discontinuous (a sectional view corresponding to Fig. 4C). [Fig. 5A] Fig. 5A is a sectional view of the mounting portion for explaining the thermal deformation amount of the first film and the thermal deformation amount of the second film (a sectional view corresponding to Fig. 4B). [Fig. 5B] Fig. 5B is a sectional view of the mounting portion for explaining the state of the portion where discontinuity is formed in the second film (a sectional view corresponding to Fig. 5A). [Fig. 6A] Fig. 6A is a sectional view of the mounting portion for explaining the thermal deformation amount of the first film and the thermal deformation amount of the second film (a sectional view corresponding to Fig. 4B). [Fig. 6B] Fig. 6B is a sectional view of the mounting portion for explaining the state of the portion where discontinuity is formed in the second film (a sectional view corresponding to Fig. 6A). [Fig. 7A] Fig. 7A is a sectional view of the mounting portion for explaining the thermal deformation amount of the first film and the thermal deformation amount of the second film (a sectional view corresponding to Fig. 4B). [Fig. 7B] Fig. 7B is a sectional view of the mounting portion for explaining the state of the portion where discontinuity is formed in the second film (a sectional view corresponding to Fig. 7A). [Fig. 8A] Fig. 8A is a sectional view of the mounting portion for explaining the thermal deformation amount of the first film and the thermal deformation amount of the second film (a sectional view corresponding to Fig. 4B). [Fig. 8B] Fig. 8B is a sectional view of the mounting portion for explaining the state of the portion where discontinuity is formed in the second film (a sectional view corresponding to Fig. 8A). [Fig. 9] is a sectional view of the mounting portion of a modified example (a sectional view corresponding to Fig. 2A). [Fig. 10] is a sectional view of the mounting portion of a modified example (a sectional view corresponding to Fig. 4A). [Fig. 11] is a top view of the mounting portion of a modified example (a top view corresponding to Fig. 2B). 212: First member 212a: Surface F1(F): First film F2(F): Second film S: Substrate Sa: Surface Se: Outer peripheral portion

Claims

1. A substrate processing method, characterized by comprising: a step of placing a substrate on a mounting portion, wherein at least a portion of the surface of the mounting portion is constituted by a first member; a film forming step of forming a first film on the surface of the substrate by supplying a first gas, and forming a second film having a portion continuous with the first film on the surface of the first member; and a step of generating stress in the interior of the second film caused by the difference in thermal deformation between the first member and the substrate, thereby causing at least a portion of the second film to become discontinuous.

2. A substrate processing method, characterized by comprising: a step of placing a substrate on a mounting portion, wherein at least a portion of the surface of the mounting portion is constituted by a first member; a film forming step of forming a first film on the surface of the substrate by supplying a first gas, and forming a second film having a portion continuous with the first film on the surface of the first member; and a step of generating stress in the interior of the second film caused by the difference in thermal deformation between the first member and the substrate, thereby making at least a portion of the second film discontinuous, wherein the first member is in contact with the substrate.

3. The substrate processing method as described in claim 2, wherein, The aforementioned first component is in contact with the edge of the aforementioned substrate.

4. A substrate processing method, characterized by comprising: a step of placing a substrate on a mounting portion, wherein at least a portion of the surface of the mounting portion is constituted by a first member; a film forming step of forming a first film on the surface of the substrate by supplying a first gas, and forming a second film having a portion continuous with the first film on the surface of the first member; and a step of generating stress in the interior of the second film caused by the difference in thermal deformation between the first member and the substrate, thereby discontinuing at least a portion of the second film, wherein in the discontinuing step, the temperature of at least one of the substrate and the first member is lower than the temperature in the film forming step by supplying a second gas.

5. The substrate processing method as described in claim 4, wherein, The aforementioned second gas is an inactive gas.

6. The substrate processing method as described in claim 4, wherein, The thermal conductivity of the second gas is higher than that of the first gas.

7. A substrate processing method, characterized by comprising: a step of placing a substrate on a mounting portion, wherein at least a portion of the surface of the mounting portion is constituted by a first member; a film forming step of forming a first film on the surface of the substrate by supplying a first gas, and forming a second film having a portion continuous with the first film on the surface of the first member; and a step of generating stress in the interior of the second film caused by the difference in thermal deformation between the first member and the substrate, thereby discontinuing at least a portion of the second film, wherein the mounting portion further comprises a flow path configured to allow the flow of a coolant, and in the discontinuing step, supplying the coolant to make the temperature of at least one of the substrate and the first member lower than the temperature in the film forming step.

8. The substrate processing method as described in claim 7, wherein, The aforementioned mounting portion also includes a heating portion for heating the aforementioned substrate, and the aforementioned flow path is provided on the side of the aforementioned heating portion.

9. The substrate processing method as described in claim 8, wherein, The aforementioned first component is disposed above the aforementioned flow path.

10. A substrate processing method, characterized by comprising: a step of placing a substrate on a mounting portion, wherein at least a portion of the surface of the mounting portion is constituted by a first member; a film forming step of forming a first film on the surface of the substrate by supplying a first gas, and forming a second film having a portion continuous with the first film on the surface of the first member; and a step of generating stress in the interior of the second film caused by the difference in thermal deformation between the first member and the substrate, thereby making at least a portion of the second film discontinuous, wherein the first member is disposed in such a manner that the direction of thermal deformation of the first member in the portion where the substrate and the first member are in contact has a component opposite to the direction of thermal deformation of the substrate.

11. The substrate processing method as described in claim 10, wherein, In the aforementioned discontinuous process, the aforementioned substrate is thermally deformed toward the center of the substrate, and the aforementioned first member is thermally deformed in a direction opposite to that toward the center of the aforementioned substrate.

12. The substrate processing method as described in claim 10, wherein, In the aforementioned discontinuous process, the aforementioned substrate is thermally deformed in a direction opposite to that toward the center of the substrate, and the aforementioned first member is thermally deformed toward the center of the substrate.

13. A substrate processing method, characterized by comprising: a step of placing a substrate on a mounting portion, wherein at least a portion of the surface of the mounting portion is constituted by a first member; a film forming step of forming a first film on the surface of the substrate by supplying a first gas, and forming a second film having a portion continuous with the first film on the surface of the first member; and a step of generating stress in the interior of the second film caused by the difference in thermal deformation between the first member and the substrate, thereby causing at least a portion of the second film to become discontinuous, wherein the surface of the mounting portion is constituted by a plurality of the first members.

14. The substrate processing method as described in claim 13, wherein, Each of the aforementioned first components undergoes independent thermal deformation.

15. The substrate processing method as described in claim 13, wherein, The plurality of the aforementioned first components have a group of the aforementioned first components such as "relative to a certain aforementioned first component, another aforementioned first component is located in a position that sandwiches the aforementioned substrate and faces each other".

16. A substrate processing method, characterized by comprising: a step of placing a substrate on a mounting portion, wherein at least a portion of the surface of the mounting portion is constituted by a first member; a film forming step of forming a first film on the surface of the substrate by supplying a first gas, and forming a second film having a portion continuous with the first film on the surface of the first member; and a step of generating stress in the interior of the second film caused by the difference in thermal deformation between the first member and the substrate, thereby causing at least a portion of the second film to become discontinuous, wherein the mounting portion is configured to hold a plurality of the aforementioned substrates.

17. A method for manufacturing a semiconductor device, characterized by having: a method as described in any one of claims 1, 2, 4, 7, 10, 13, and 16.

18. A substrate processing apparatus, characterized in that it comprises: a mounting portion having at least a portion of its surface formed by a first member; a film forming mechanism forming a first film on the surface of a substrate mounted on the mounting portion and forming a second film having a portion continuous with the first film on the surface of the first member; a temperature regulating mechanism causing a temperature change of at least one of the substrate and the mounting portion; and a control unit configured to control the film forming mechanism and the temperature regulating mechanism to perform processing including any one of claims 1, 2, 4, 7, 10, 13, and 16.

19. A computer-readable recording medium recording a program that causes a board processing apparatus to perform the method as described in any one of claims 1, 2, 4, 7, 10, 13, and 16.

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