Deflector structures

Abstract

An apparatus includes: a first charged particle beam manipulator positioned in a first layer and configured to influence a charged particle beam; and a second charged particle beam manipulator positioned in a second layer and configured to influence the charged particle beam. The first and second charged particle beam manipulators may each include a plurality of electrodes having a first set of counter electrodes and a second set of counter electrodes. A first driver system electrically connected to one of the first sets of electrodes may be configured to provide a plurality of discrete output states to the first set. A second driver system electrically connected to one of the second sets of electrodes may be configured to provide a plurality of discrete output states to the second set. The first and second charged particle beam manipulators may each include: a plurality of segments; and a controller having circuitry configured to individually control the operation of each of the plurality of segments.

Description

Detection Device and Method for Affecting a Charged Particle Beam Embodiments provided herein generally relate to a detection device, and more particularly to a charged particle beam manipulation system of a detection device. In the manufacturing process of an integrated circuit (IC), unfinished or finished circuit components are detected to ensure that they are manufactured according to the design and are defect-free. Detection systems using optical microscopes or charged particle (e.g., electron) beam microscopes, such as scanning electron microscopes (SEM), can be employed. As the physical size of IC components continues to shrink, the defect detection accuracy of yield control becomes increasingly important. Although multiple electron beams can be used to increase throughput, limitations in electron beam deflection can limit the desired imaging throughput for reliable defect detection and analysis, resulting in the detection tool being insufficient for its desired throughput. As devices continue to shrink and IC wafer architectures become increasingly complex, detection and metrology systems have made significant progress (such as multi-beam detection, multiple detectors, etc.) to increase wafer detection throughput, etc. A charged particle probe beam with low landing energy provides surface-related information while a probe beam with high landing energy can be used to extract information from buried layers. To obtain a high overall wafer detection throughput, it may be necessary to increase the scanning field of view for both low landing energy mode and high landing energy mode. Achieving a large field of view at high landing energy may involve optimizing the scanning deflection system and associated electronic circuit design. Although existing systems can achieve high throughput for low landing energy detection, it is difficult for them to obtain high throughput while maintaining image quality. Some embodiments of the present invention may provide a single-beam or multi-beam detection device, and more particularly provide a single-beam or multi-beam detection device including a scanning deflection system. In some embodiments, a device including a first charged particle beam manipulator including a plurality of layers is provided. The manipulator can be configured to affect a charged particle beam. The charged particle beam can be an electron beam. The device further includes: a plurality of electrodes having a first set of opposing electrodes and a second set of opposing electrodes; a first driver system electrically connected to the first set of opposing electrodes and configured to provide a plurality of discrete output states to the first set of opposing electrodes; and a second driver system electrically connected to the second set of opposing electrodes and configured to provide a plurality of discrete output states to the second set of opposing electrodes. In addition, each of the plurality of layers may include the plurality of electrodes, the first driver system, and the second driver system. In some embodiments, a method for dynamically deflecting an electron beam is provided. The method includes using a first driver system to control a first set of opposing electrodes to affect an electron beam, and using a second driver system to control a second set of opposing electrodes to affect the electron beam, wherein the first driver system, the first set of opposing electrodes, the second driver system, and the second set of opposing electrodes are implemented in a first layer. In some embodiments, a non-transitory computer-readable medium including an instruction set is provided, the instruction set being executable by one or more processors of a controller to cause the controller to perform a method for dynamically deflecting an electron beam. The method includes instructing a first driver system connected to a first set of opposing electrodes to control a first set of output states to affect an electron beam, and instructing a second driver system connected to a second set of opposing electrodes to control a second set of output states to affect the electron beam, wherein the first driver system, the first set of opposing electrodes, the second driver system, and the second set of opposing electrodes are implemented in a first layer. Some aspects of the present invention relate to a charged particle beam device, the charged particle beam device including: a first charged particle beam deflector configured to affect a primary charged particle beam generated by a charged particle source along a main optical axis; a second charged particle beam deflector positioned downstream of the first charged particle beam deflector and configured to affect the primary charged particle beam, wherein the first charged particle beam deflector and the second charged particle beam deflector each include a plurality of segments; and a controller having circuitry configured to individually control the operation of each of the plurality of segments. Some aspects of the present invention relate to a charged particle beam device including: a first charged particle beam deflector configured to affect a primary charged particle beam generated by a charged particle source along a main optical axis; a second charged particle beam deflector positioned downstream of the first charged particle beam deflector and configured to affect the primary charged particle beam, wherein the first charged particle beam deflector and the second charged particle beam deflector each include: an electrostatic deflector electrically connected to a first driver system configured to enable the electrostatic deflector to deflect the primary charged particle beam; and a magnetic deflector electrically connected to a second driver system configured to enable the magnetic deflector to deflect the primary charged particle beam. Some aspects of the present invention relate to a method for deflecting a primary charged particle beam passing through a deflection scanning unit of a charged particle beam device. The method may include deflecting the primary charged particle beam generated by a charged particle source along a main optical axis using a first charged particle beam deflector; deflecting the primary charged particle beam using a second charged particle beam deflector positioned downstream of the first charged particle beam deflector, wherein the first and second charged particle beam deflectors each include a plurality of segments; and using a controller having circuitry to individually control the operation of each of the plurality of segments. Some aspects of the present invention relate to a method for deflecting a primary charged particle beam through a deflection scanning unit of a charged particle beam device. The method may include deflecting a primary charged particle beam generated by a charged particle source along a main optical axis using a first charged particle beam deflector; deflecting the primary charged particle beam using a second charged particle beam deflector positioned downstream of the first charged particle beam deflector, wherein the first and second charged particle beam deflectors each include: an electrostatic deflector electrically connected to a first driver system configured to enable the electrostatic deflector to affect the primary charged particle beam; and a magnetic deflector electrically connected to a second driver system configured to enable the magnetic deflector to affect the primary charged particle beam. Some aspects of the present invention relate to a non-transitory computer-readable medium storing a set of instructions executable by one or more processors of a charged particle beam device to cause the charged particle beam device to perform a method of deflecting a primary charged particle beam through a deflection scanning unit of the charged particle beam device. The method may include deflecting the primary charged particle beam generated by a charged particle source along a main optical axis using a first charged particle beam deflector; deflecting the primary charged particle beam using a second charged particle beam deflector positioned downstream of the first charged particle beam deflector, wherein the first and second charged particle beam deflectors each include a plurality of segments; and individually controlling the operation of each of the plurality of segments configured to deflect the primary charged particle beam. Some aspects of the present invention relate to a non-transitory computer-readable medium storing a set of instructions executable by one or more processors of a charged particle beam device to cause the charged particle beam device to perform a method of deflecting a primary charged particle beam through a deflection scanning unit of the charged particle beam device. The method may include deflecting the primary charged particle beam generated by a charged particle source along a main optical axis using a first charged particle beam deflector; deflecting the primary charged particle beam using a second charged particle beam deflector positioned downstream of the first charged particle beam deflector, wherein the first and second charged particle beam deflectors each include: an electrostatic deflector electrically connected to a first driver system configured to enable the electrostatic deflector to affect the primary charged particle beam; and a magnetic deflector electrically connected to a second driver system configured to enable the magnetic deflector to affect the primary charged particle beam. Other advantages of embodiments of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings, in which certain embodiments of the present invention are illustrated by way of illustration and example. Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings, where like numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the invention. Instead, they are merely examples of devices and methods consistent with aspects of the invention recited in the appended claims. For example, although some embodiments are described in the context of content using an electron beam, the invention is not limited thereto. Other types of charged particle beams can be similarly applied. Additionally, other imaging systems can be used, such as optical imaging, light detection, x-ray detection, and the like. An electronic device is composed of circuits formed on a silicon block called a substrate. Many circuits can be formed together on the same silicon block and are called integrated circuits or ICs. The size of these circuits has been significantly reduced such that many of the circuits in a circuit can be mounted on a substrate. For example, in a smartphone, an IC chip can be the size of a thumbnail and can also include more than 2 billion transistors, each transistor being less than 1 / 1000 the size of a human hair. Manufacturing these extremely small ICs is a complex, time-consuming, and expensive process that often involves hundreds of individual steps. Even an error in one step has the potential to cause defects in the finished IC, rendering the finished IC useless. Therefore, one goal of the manufacturing process is to avoid such defects to maximize the number of functional ICs manufactured in the process, that is, to improve the overall yield of the process. One component of improving yield is to monitor the wafer manufacturing process to ensure that it is producing a sufficient number of functional integrated circuits. One way to monitor the process is to detect the wafer circuit structure at different stages of its formation. A scanning electron microscope (SEM) can be used for the detection. The SEM can be used to actually image these extremely small structures to obtain an "image" of the structure. The image can be used to determine whether the structure is being formed properly and also whether the structure is formed in the appropriate location. If the structure is defective, the process can be adjusted so that the defect is unlikely to recur. Although charged particle beam imaging systems (such as single-beam SEM or multi-beam SEM) can be applicable to yield improvement, achieving the required higher throughput can lead to higher complexity and higher power consumption in high-speed scanning deflection systems. The disclosed deflection structure can be configured such that the beam can scan a large surface of a sample at high speed with low distortion. The SEM uses a deflection structure to direct the beam for scanning the surface to construct an image of the sample. The deflection structure requires a deflection driver that generates a variety of voltages within a predefined range to generate an electromagnetic field to enable the beam to be manipulated. To fabricate a scanning deflection system, conventional systems utilize well-designed and constructed linear amplifiers and digital / analog converters (DACs) or continuous-time sawtooth signal generators. However, the use of conventional deflection driver components is not optimal because it can cause problems. For example, conventional deflection driver components are more complex, resulting in reliability issues, increased noise levels and increased power consumption in various scenarios, which can stress the SEM. Some embodiments of the present invention may relate to an electron beam scanning deflection system. The scanning deflection system can be used for dynamic deflection. In some embodiments of the present invention, a charged particle beam detection system includes an improved deflection structure having a driver system configured to manipulate the beam. The driver system can use a plurality of high-voltage power supplies or high-speed and high-voltage switches for manipulating the beam, rather than an analog amplifier and DAC or continuous-time sawtooth signal generator as may be required by conventional techniques. The high-voltage power supply can provide a static high-voltage output having a predefined value. The high-speed and high-voltage switches can provide the required high voltage to be supplied to the deflector (electrode). For example, the high-speed and high-voltage switches can replace the high-voltage linear amplifier and digital / analog converter (DAC) or continuous-time sawtooth signal generator. The replacement can simplify the circuit design of the driver system because fewer components are required to build the switches compared to the high-voltage linear amplifier. In addition, the digital / analog converter or continuous-time sawtooth signal generator may no longer be needed because the configuration transmitted in digital signal form from the controller of the charged particle beam detection system can be directly applied to the switches connected to the high-voltage regulator that supplies the static high-voltage output. In some embodiments, the deflection structure and the driver system can provide several advantages by operating active devices in a switching mode rather than a linear mode, where the active devices can control and supply power to the deflection structure. The trade-off between linearity, speed, and power consumption (as in conventional scanning deflection systems) can be reduced or avoided. First, the deflection structure can adjust the voltage provided by the power supply more quickly because, using the same components or processes, the construction of high-speed and high-voltage switches can be easier than the construction of high-voltage and high-speed linear amplifiers, and the switches can reach higher speeds. This enables faster manipulation of the beam. Second, the scanning deflection system can also provide more accurate control of the input signal (e.g., linearity) because the switching-mode active devices in the driver system can provide the desired voltage to the deflection structure even at high speeds. Third, the scanning deflection system can use less power. Thus, there can be less wasted energy. Compared with the active devices in the linear mode, the active devices in the switching mode consume less power by turning high-speed high-voltage switches on or off. Therefore, the switching-mode active devices are conducive to the thermal management of the charged particle beam detection system. And fourth, by using fewer components, the disclosed driver system can improve the overall reliability of the charged particle beam detection system. Simplify the circuitry of the driver system, thus improving the overall reliability of the SEM. The limitations of electron beam inspection and metrology systems in a wafer fabrication facility have been continuously pushed to support the advancement of chip design and device design. In the case of complex 3D structures for devices such as 3D NAND, FinFET, DRAM, defects can be buried deeper within the substrate, and secondary electron microscopy that provides surface-level information can be insufficient and often misleading. Electron beams with high landing energies can penetrate the subsurface layer and provide more information about defects and structures buried deeper within the substrate. However, some of the problems encountered in using high landing energy beams include generating backscattered electrons with low detection and sampling yields, a smaller field of view (FOV) compared to low landing energy electron beams, poor image quality, and low throughput. Additionally, high landing energy beam systems can also encounter challenges in driver circuit design due to the overly high voltages required for beam deflection to maintain the FOV as the landing energy increases. Therefore, there may be a need to provide systems and methods for obtaining a large FOV for both low and high landing energies while maintaining high image quality for defect inspection and overlay metrology and high throughput. Some embodiments of the present invention relate to devices and methods for deflecting a primary electron beam using a segmented deflector. The method can include deflecting the primary electron beam using two or more than two deflectors, each deflector including a plurality of segments. Each of the plurality of segments can include a multipole structure including a plurality of electrodes configured to deflect the primary electron beam. Each segment can be electronically driven using a dedicated driver system or driver circuitry capable of supporting the scanning frequency and driver linearity to sufficiently deflect the beam to form a large FOV. Other objects and advantages of the present invention can be realized by the elements and combinations set forth in the embodiments as discussed herein. However, it is not necessary for the embodiments of the present invention to achieve such exemplary objects or advantages, and some embodiments may not achieve any of the stated objects or advantages. Without limiting the scope of the present invention, some embodiments may be described in the context of a scanning deflection system and a scanning deflection method that utilize an electron beam (「electron beam / e-beam」) in the system. The scanning deflection system may use an electric field to affect a charged particle beam. However, the present invention is not limited thereto. Other types of charged particle beams may be similarly applied. For example, the system and method may be applicable to optics, photons, x-rays, ions, etc. Deflection can be used to scan a beam on a surface in, for example, a cathode ray tube (CRT), a lithography machine, a scanning electron microscope (SEM), or other analytical instruments. Although some embodiments are described with reference to a deflection system that uses an electric field to affect the beam, deflection can also be achieved, for example, by using a magnetic field. Now referring to FIG. 1, which is a diagram illustrating an exemplary charged particle beam detection system 1 in accordance with an embodiment of the present invention. As shown in FIG. 1, the charged particle beam detection system 1 includes a main chamber 10, a load / lock chamber 20, an electron beam tool 100, and an equipment front end module (EFEM) 30. The electron beam tool 100 is located within the main chamber 10. Although the description and diagrams are regarding an electron beam, it should be understood that the embodiments are not intended to limit the present invention to a specific charged particle. The EFEM 30 includes a first load port 30a and a second load port 30b. The EFEM 30 may include additional load ports. The first load port 30a and the second load port 30b may, for example, accommodate a front-opening unified pod (FOUP) containing a wafer (e.g., a semiconductor wafer or a wafer made of other materials) or a sample to be detected (wafers and samples are hereinafter collectively referred to as 「wafers」). One or more robotic arms (not shown in the figure) in the EFEM 30 transport the wafers to the load / lock chamber 20. The load / lock chamber 20 may be connected to a load / lock vacuum pump system (not shown in the figure), which removes gas molecules in the load / lock chamber 20 to reach a first pressure lower than atmospheric pressure. After reaching the first pressure, one or more robotic arms (not shown in the figure) transport the wafers from the load / lock chamber 20 to the main chamber 10. The main chamber 10 is connected to a main chamber vacuum pump system (not shown in the figure), which removes gas molecules in the main chamber 10 to reach a second pressure lower than the first pressure. After reaching the second pressure, the wafers are subjected to detection by the electron beam tool 100. In some embodiments, the electron beam tool 100 may include a single-beam detection tool. In other embodiments, the electron beam tool 100 may include a multi-beam detection tool. The controller 50 is electronically connected to the beam tool 100. The controller 50 can be a computer configured to perform various controls on the charged particle beam detection system 1. The controller 50 can also include processing circuitry configured to perform various signal and image processing functions. Although the controller 50 is shown in FIG. 1 as being external to the structure including the main chamber 10, the load / lock chamber 20, and the EFEM 30, it should be understood that the controller 50 can be part of that structure. Although the present invention provides an example of a main chamber 10 that houses an electron beam detection tool, it should be noted that aspects of the present invention are not limited, in their broadest sense, to a chamber that houses an electron beam detection tool. In fact, it should be understood that the foregoing principles can also be applied to other tools operating at a second pressure. Referring now to FIG. 2, which is a diagram illustrating an exemplary electron beam tool 100 in accordance with an embodiment of the present invention, the exemplary electron beam tool including a multi-beam detection tool that is part of the exemplary charged particle beam detection system 1 of FIG. 1. The electron beam tool 100 (also referred to herein as the device 100) includes an electron source 101, a gun aperture plate 171, a condenser lens 110, a source conversion unit 120, a primary projection optical system 130, a sample stage (not shown in FIG. 2), a secondary optical system 150, and an electron detection device 140M. The primary projection optical system 130 can include an objective lens 131. The electron detection device 140M can include a plurality of detection elements 140_1, 140_2, and 140_3. A beam splitter 160 and a deflection scanning unit 132 can be placed inside the primary projection optical system 130. The electron source 101, the gun aperture plate 171, the condenser lens 110, the source conversion unit 120, the beam splitter 160, the deflection scanning unit 132, and the primary projection optical system 130 can be aligned with the main optical axis 100_1 of the device 100. The secondary optical system 150 and the electron detection device 140M can be aligned with the sub-optical axis 150_1 of the device 100. The electron source 101 can include a cathode (not shown in the figure) and an extractor or anode (not shown in the figure), wherein during operation, the electron source 101 is configured to emit primary electrons from the cathode and extract or accelerate the primary electrons by the extractor and / or the crystal anode to form a primary electron beam 102, which forms a primary beam crossover (virtual or real) 101s. The primary electron beam 102 can be visualized as being emitted from the crossover 101s. The source conversion unit 120 may include an image forming element array (not shown in FIG. 2), a field curvature compensator array (not shown in FIG. 2), an astigmatism compensator array (not shown in FIG. 2), and a beam limiting aperture array (not shown in FIG. 2). The image forming element array may include a plurality of micro deflectors or microlenses to form a plurality of parallel images (virtual or real) of the crossovers 101s with a plurality of electron beams (e.g., fine beams) of the primary electron beam 102. The field curvature compensator array may include a plurality of microlenses to compensate for the field curvature aberration of the primary electron beam. The astigmatism compensator array may include a plurality of astigmatism correctors to compensate for the astigmatism aberration of the primary electron beam. The beam limiting aperture array may limit a plurality of electron beams. FIG. 2 shows three electron beams 102_1, 102_2, and 102_3 as an example, and it should be understood that the source conversion unit 120 may be configured to form any number of electron beams. The controller 50 may be connected to various parts of the charged particle beam detection system 1 of FIG. 1, such as the source conversion unit 120, the electron detection device 140M, or the primary projection optical system 130. More specifically, the controller 50 may be connected to the deflection scanning unit 132. In some embodiments, as will be explained in further detail below, the controller 50 may perform various processing functions. The controller 50 may also generate various control signals to control the operation of the charged particle beam detection system. The condenser lens 110 may focus the primary electron beam 102. The current of the electron beams 102_1, 102_2, and 102_3 downstream of the source conversion unit 120 may be varied by adjusting the focusing magnification of the condenser lens 110 or by changing the radial size of the corresponding beam limiting aperture within the beam limiting aperture array. The objective lens 131 may focus the electron beams 102_1, 102_2, and 102_3 onto the sample 190 for detection and may form detection spots 102_1s, 102_2s, and 102_3s on the surface of the sample 190. The gun aperture plate 171 may block the peripheral electrons of the primary electron beam 102 not in use to reduce the Coulomb effect. The Coulomb effect may enlarge the size of each of the detection spots 102_1s, 102_2s, and 102_3s, and thus reduce the detection resolution. The beam separator 160 may be a beam separator of the Wien filter type, which includes an electrostatic deflector that generates an electrostatic dipole field E1 and a magnetic dipole field B1 (both not shown in FIG. 2). If these beam separators are applied, the force exerted by the electrostatic dipole field E1 on the electrons of the electron beams 102_1, 102_2, and 102_3 is equal in magnitude and opposite in direction to the force exerted by the magnetic dipole field B1 on the electrons. The electron beams 102_1, 102_2, and 102_3 may thus pass directly through the beam separator 160 at a zero deflection angle. The deflection scanning unit 132 can deflect the electron beams 102_1, 102_2, and 102_3 so that the detection spots 102_1s, 102_2s, and 102_3s scan the scanned area in the surface section of the sample 190. In response to the incidence of the electron beams 102_1, 102_2, and 102_3 on the detection spots 102_1s, 102_2s, and 102_3s, secondary electron beams 102_1se, 102_2se, and 102_3se can be emitted from the sample 190. Each of the secondary electron beams 102_1se, 102_2se, and 102_3se can include electrons having an energy distribution, including secondary electrons and backscattered electrons. The beam separator 160 can direct the secondary electron beams 102_1se, 102_2se, and 102_3se to the secondary optical system 150. The secondary optical system 150 can focus the secondary electron beams 102_1se, 102_2se, and 102_3se onto the detection elements 140_1, 140_2, and 140_3 of the electron detection device 140M. The detection elements 140_1, 140_2, and 140_3 can detect the corresponding secondary electron beams 102_1se, 102_2se, and 102_3se and generate corresponding signals for reconstructing an image of the corresponding scanned area of the sample 190. In some embodiments, the scanning deflection system can be applied to the deflection scanning unit of a single or multi-beam charged particle beam system. For example, the deflection scanning unit 132 (see FIG. 2) can include an electron beam scanning deflection system. Now referring to FIG. 3A, which illustrates the configuration of a deflector and objective lens assembly in accordance with an embodiment of the present invention. As shown in FIG. 3A, the magnetic objective lens assembly 310 and the deflectors 309-1 and 309-2 can be disposed within the magnetic field of the objective lens assembly 310, wherein the deflectors 309-1 and 309-2 can be implemented in a deflection scanning unit (e.g., the deflection scanning unit 132 of FIG. 2). The deflectors 309-1 and 309-2 can be configured to dynamically deflect the electron beam to scan a desired area on the surface of the sample 308. The dynamic deflection of the electron beam can cause the desired area or the desired area of interest to be scanned repeatedly, for example, in a line-by-line scanning mode, to generate a secondary electron beam (e.g., 102_1se, 102_2se, and 102_3se of FIG. 2) for sample detection. The deflector 309-1 or 309-2 can be configured to deflect the electron beam in the X-axis or Y-axis direction. As used herein, the X-axis and Y-axis form the Cartesian coordinates of an arbitrary reference frame, wherein the electron beam can propagate along the Z-axis or the principal optical axis 304. The X-axis refers to the horizontal or transverse axis extending along the width of the paper, and the Y-axis refers to the vertical axis extending in and out of the plane of the paper in the view of FIG. 2 or FIG. 3A. Referring now to FIG. 3B, which shows a representation of a charged particle beam passing through a deflector in accordance with an embodiment of the present invention. In some embodiments, the charged particle beam may be deflected as it passes through a region between a pair of electrodes. As shown in FIG. 3B, the charged particle beam 320 may travel along axis 350. Axis 350 may be aligned with the Z-axis of the charged particle beam system. Electrodes 335 and 345 may be disposed on either side of axis 350. A voltage may be applied to electrodes 335 and 345. An electric field may be formed between the electrodes, and the components of the electric field are substantially perpendicular to the direction of travel of the charged particle beam 320. When the charged particle beam 320 travels through the resulting electric field, it may be affected by the electric field. For example, its trajectory may be changed. The deflection scanning unit may use the deflector to deflect a beam so as to scan across a region on the sample. Referring now to FIG. 3C, which is a diagram illustrating the configuration of electrodes in accordance with an embodiment of the present invention. FIG. 3C shows a multipole structure having four electrodes e1 to e4, which may be configured to act in different ways based on the voltage applied to each of the electrodes. The deflector may be formed using electrodes e1 to e4. In some embodiments, the deflection voltage may be formed between opposing pairs of electrodes (e.g., the pair formed by electrodes e2 and e4; or the pair formed by electrodes e1 and e3). Multiple electrode pairs may be combined such that deflection in a two-dimensional plane is possible. The deflector may be positioned in the region of the objective lens in the SEM system. The deflector may be used to dynamically direct the beam to a desired location on the sample surface. In some embodiments, there may be multiple beams that can be directed to multiple locations on the sample surface. In some embodiments, the deflector can be used for other functions. In some cases, such as in the case of a microlens or an astigmatism corrector, a static drive voltage can typically be applied to the deflector. For example, such a deflector can also be dynamically operated at high speeds when quickly switching between different operating conditions. Therefore, it may be applicable to apply aspects of the present invention, such as deflector and driver designs, to such deflectors. In one scenario, when a voltage is applied to all electrodes, the multipole structure can be configured to act as a microlens. When two voltages with the same absolute value but opposite directions are applied to two pairs of opposing electrodes, the multipole structure is configured to act as an astigmatism corrector. For example, in FIG. 3C, when V1 is applied to electrodes e1 and e3 and when -V1 is applied to electrodes e2 and e4, the multipole structure acts as an astigmatism corrector. And when a zero voltage is applied to one pair of opposing electrodes and two voltages with the same absolute value but opposite polarities are applied to the other pair of opposing electrodes, the multipole structure can be configured to act as a microdeflector. For example, in FIG. 3C, when 0 V is applied to electrodes e2 and e4, V2 is applied to e1, and -V2 is applied to e3, the multipole structure acts as a microdeflector. When operating as a microdeflector, as V2 increases, the deflection angle of the electron beam also increases. In some cases, the microdeflector can be configured to operate using two-dimensional (or more) deflection functions. FIG. 3C shows an example of four electrodes configured in a multipole structure, and it should be understood that the multipole structure can be configured to form more than four electrodes. Now referring to FIG. 4A, which shows a plan view of an illustrative embodiment of a deflection structure 400 implemented in an electron beam detection system in accordance with an embodiment of the present invention. The electron beam detection system can include a single-beam or multi-beam system. In some embodiments, the deflection structure 400 can be one of several deflection structures to be implemented in a scanning deflection system (e.g., the deflection scanning unit 132 of FIG. 2) of an electron beam detection system. The deflection structure 400 can be used to manipulate an electron beam. The deflection system may include a deflection structure and a driver system. The deflection structure may include a multi-pole structure. As shown in FIG. 4A, the deflection structure 400 includes a multi-pole structure 410, a first driver system 401y, and a second driver system 402x. The multi-pole structure 410 includes a first set of opposed electrodes 411A to 411B and a second set of opposed electrodes 412A to 412B that can be configured to deflect an electron beam in each deflection direction (such as the x direction or the y direction) based on the output state applied to each set. The output state may correspond to the voltage applied to the electrodes. The multi-pole structure 410 (including multiple sets of electrodes 411A-B and 412A-B) can be used as a dynamic deflector based on the voltage applied to the electrodes 411A-B and 412A-B (for example, it can perform the functions of the deflectors 309-1 or 309-2 in FIG. 3A). For example, when the first driver system 401y applies 0 V to the electrodes 411A and 411B, and the second driver system 402x applies V1 to the electrode 412A and -V1 to the electrode 412B, the electron beam is deflected in the x direction. By way of other examples, when the first driver system 401y applies V2 to the electrode 411A and -V2 to the electrode 411B, and the second driver system 402x applies 0 V to the electrodes 412A and 412B, the electron beam is deflected in the y direction. When V1 and V2 increase, the deflection angle of the electron beam also increases. FIG. 4A shows an example of four electrodes configured in the multi-pole structure 410, and it should be understood that the multi-pole structure 410 can be configured to form more than four electrodes. In addition, FIG. 4A shows an example of two sets of opposed electrodes 411A-B and 412A-B configured in the multi-pole structure 410, and it should be understood that the multi-pole structure 410 can be configured to form any number of sets of opposed electrodes (including one). In some embodiments, multiple sets of electrodes 411A-B and 412A-B may be formed in a substrate and include multiple beam manipulators in the substrate. For example, each beam manipulator can be electrically isolated from other beam manipulators by circular grooves filled with an insulating material (such as CVD oxide). Within the circular region, the manipulators can be formed, for example, by etching deflector holes and any isolation grooves between the electrodes and by sputtering a metal layer over the locations where the electrodes should be formed. The metal layer can form multiple sets of electrodes 411A-B and 412A-B, and some of these layers can be used for a first set of electrodes and other layers can be used for a second set of electrodes. The first driver system 401y is electrically connected to the first set of opposed electrodes 411A-B and is configured to provide a plurality of discrete output states to the first set of opposed electrodes 411A-B, and the second driver system 402x is electrically connected to the second set of opposed electrodes 412A-B and is configured to provide a plurality of discrete output states to the second set of opposed electrodes 412A-B. As discussed above with respect to the multi-pole structure 410, each of the driver systems 401y and 402x is configured to enable a set of opposed electrodes (such as 411A-B and 412A-B) to deflect an electron beam in one direction by providing a plurality of discrete output states to the corresponding set of opposed electrodes. Each of the driver systems 401y and 402x may include a plurality of power supplies and a plurality of switches. The switches may refer to active devices operating in a switching mode. The power supplies may be configured to provide a plurality of discrete output states. Alternatively, each of the plurality of power supplies may be configured to provide a discrete output state. For example, the driver 401y may be configured to have power supplies that provide -100 V, 0 V, and +100 V. By way of other examples, the driver 401y may be configured to have power supplies that provide -100 V, -50 V, 0 V, +50 V, and +100 V. The plurality of switches may be configured by a controller and transmit incoming discrete output states from the power supplies to the corresponding set of opposed electrodes. The controller (e.g., the controller 50 in FIG. 1) may transmit digital signals to apply digital signals to turn on or off the switches to transmit the incoming discrete output states or block the output states. For example, three switches may be connected to three tap points associated with a power supply and a first set of opposed electrodes, and the controller may transmit digital signals to select one of the three switches to transmit the desired output state from the power supply corresponding to the selected switch. The plurality of switches may be MOS drivers for achieving rapid conversion of the output states. Referring now to FIG. 5A, which shows a graphical representation of a driver (such as driver system 401y) in accordance with an embodiment of the present invention. Driver system 401y can be configured to provide a plurality of output states. The output states can correspond to, for example, -100 V, 0 V, and 100 V. Driver system 401y can include a multi-output driver 440. Multi-output driver 440 can have a first output 441, a second output 442, and a third output 443. Outputs 441, 442, 443 can correspond to -100 V, 0 V, and 100 V, respectively. Driver system 401y can also include a switch unit 450. Switch unit 450 can include a plurality of individual switches. Switch unit 450 can be configured to operate such that only one connection is allowed at a time. Switch unit 450 includes a first switch 451, a second switch 452, and a third switch 453. In the state shown in FIG. 5A, only the third switch 453 is connected. Thus, the output to electrode 411A can be the output provided by the third output 443. Control signals can be provided to components of driver system 401y. As shown in FIG. 5A, a controller 50 can be configured to control driver system 401y. Controller 50 can be connected to multi-output driver 440 and can be configured to instruct multi-output driver 440 to operate. Controller 50 can be connected to switch unit 450 and can be configured to instruct switch unit 450 to operate. For example, controller 50 can instruct multi-output driver 440 to supply power and instruct switch unit 450 to select one of switches 451, 452, 453 to be connected such that an output state is provided to electrode 411A. The plurality of switches can enable the deflection structure 400 to provide several advantages over conventional scanning deflection drivers, such as scanning deflection drivers that include a high-voltage linear amplifier and a digital / analog converter (DAC) or a continuous-time sawtooth signal generator. First, the deflection structure 400 can adjust the voltage provided by the power supply more quickly because the configuration from the controller 50 can be directly applied to the switches in the driver system, thereby enabling faster manipulation of the beam. In a conventional deflection structure, the configuration in the form of a digital signal transmitted from the controller must be further converted by a digital / analog converter to configure the high-voltage linear amplifier, thereby causing a delay. The trade-off between speed, linearity, and power consumption that can limit the performance in a conventional scanning deflection system can be avoided. In addition, the active devices can operate at a higher speed when operating in a switching mode. Additionally, compatibility can be improved because more high-voltage active devices are generally designed to operate in a switching mode rather than a linear mode. Operating such devices in a linear mode can limit the performance in terms of linearity and speed, especially when the devices operate at high voltage. Second, the deflection structure 400 can provide more accurate control of the input signal (e.g., linear), since the switch provides the desired voltage to the deflection structure even at high speeds. On the other hand, the linearity of a high-voltage linear amplifier can be impaired when the predefined operating voltage of the amplifier is higher. Third, compared to active devices operating in the linear mode, active devices operating in the switching mode of the deflection structure 400 can waste less power. On the other hand, active devices operating in the linear mode can consume more power, and a system based on a linear amplifier can be more difficult to maintain. In some embodiments, each of the first driver system 401y and the second driver system 402x may include a plurality of physical drivers. Each of the plurality of physical drivers may include a power supply that provides a discrete output and a switch similar to the switch described above. The physical driver may be configured to provide a discrete output state to a corresponding electrode (such as electrodes 411A-B and 412A-B). Referring now to FIG. 5B, which shows a graphical representation of a plurality of drivers in accordance with an embodiment of the present invention. The driver system 401y may be configured to provide a plurality of output states by providing individual drivers that each generate an output. Each individual driver may be configured to provide its own output. The driver system 401y may include a first driver 461, a second driver 462, and a third driver 463. Each of the drivers 461, 462, and 463 may be configured to supply power at a predefined output. The drivers 461, 462, and 463 are connected to switches 451, 452, and 453, respectively. The controller 50 may be configured to operate the switches 451, 452, and 453 individually. The controller 50 may be configured to operate the drivers 461, 462, and 463 individually. The controller 50 may be configured to operate the switches such that only one switch is connected at a time. In the state shown in FIG. 5B, only the third switch 453 is connected. Thus, the output to electrode 411A may be provided only by the third driver 463. Referring now to FIG. 4B, which shows a cross-sectional view of an illustrative embodiment of a deflection system 450 that can be used in an electron beam inspection system in accordance with an embodiment of the present invention. The deflection system 450 includes deflection structures 450A to 450D, each of which is in a corresponding layer. Each deflection structure 450A to 450D includes a manipulator or multipole structure (410A to 410D) and a plurality of driver systems (401yA to 401yD and 402xA to 402xD). In some embodiments, the plurality of driver systems (401yA to 401yD and 402xA to 402xD) and the multipole structure (410A to 410D) can be implemented in separate layers. The deflection structures 450A to 450D can be used as deflectors implemented in the deflection scanning unit 132 shown in FIG. 2 or deflectors 309-1 and 309-2 shown in FIG. 3A, etc. Each of the plurality of driver systems (401yA to 401yD and 402xA to 402xD) is electrically connected to a set of opposing electrodes implemented in the multipole structure (410A to 410D) and is configured to provide a plurality of discrete output states to the set of opposing electrodes implemented in the multipole structure. For example, driver 401yA can be electrically connected to a set of opposing electrodes implemented in multipole structure 410A and driver 402xA can be electrically connected to another set of opposing electrodes in multipole structure 410A. The deflection structures 450A to 450D and the deflection structure 400 (depicted in FIG. 4A) share the same functionality, such as manipulating an electron beam. The multipole structures 410A to 410D and the multipole structure 410 (depicted in FIG. 4A) share the same functionality to deflect an electron beam in one direction when provided with output states from the driver systems. The driver systems 401A to 401D and 402A to 402D, as well as the driver systems 401y and 402x (depicted in FIG. 4A), share the same functionality to provide discrete output states to the multipole structure to deflect the beam. Additionally, although FIG. 4B shows four layers of the deflection structures 450A to 450D, it should be understood that the deflection structures can be implemented in any number of layers. Although in the embodiment of FIG. 4B each of the multiple layers (e.g., 410A to 410D) is sized to have substantially the same dimensions, the size of each layer can be determined by the physical dimensions (such as length, inner diameter, and outer diameter) of the electrodes implemented in the layer and corresponds to the deflection angle. For example, when the driver systems 401yA to 401yD and 402xA to 402xD provide substantially the same output state to the electrodes of the multi-pole structures 410A to 410D, the deflection structures (such as 450A to 450D) in each layer can deflect the electron beam at substantially the same deflection angle. In another example, the deflection structures (such as 450A to 450D) in each layer can deflect the electron beam at different deflection angles when their corresponding driver systems (e.g., 401yA to 401yD and 402xA to 402xD) provide different output states to the electrodes of their corresponding multi-pole structures (e.g., 410A to 410D). In some embodiments, one or more of the multiple layers (such as the layer including the deflection structure 450D) can be implemented with a driver system including a linear amplifier having a limited output voltage swing to provide finer deflection control by enabling the embodiment to provide a high-resolution output voltage to the electrodes in one of the multi-layer structures. For example, when the scanning deflection system in the electron beam detection system is configured to deflect the electron beam equivalent to applying 155 V to a single conventional multi-pole structure having the same size as one of 410A to 410D, the controller can be configured to connect a switch to a multi-pole structure (such as one of 450A to 450C) to transfer 50 V from a discrete power supply implemented in each deflection structure. Thus, the electrode pairs in three of the four multi-pole structures in FIG. 4B can be connected to -25 V and +25 V, respectively. To achieve the remaining part of the deflection equivalent to applying 5 V to a conventional multi-pole structure of the same size, the controller can configure the deflection structure (such as 450D) implemented with the aforementioned linear amplifier that supplies -2.5 V and 2.5 V to the multi-pole structure. However, since this linear amplifier has a much larger limited range compared to what an existing deflector would require, this linear amplifier can be easier to implement, faster, lower in power, etc., compared to the linear amplifier used with an existing deflector. Referring now to FIG. 4C, which shows a cross-sectional view of another deflection system 550 that can be used in an electron beam inspection system in accordance with an embodiment of the present invention. The deflection system 550 includes deflection structures 550A to 550D, each of which is in a corresponding layer. Each of the deflection structures 550A to 550D includes a manipulator or multipole structure (510A to 510D) connected to a plurality of drivers (501yA to 501yD and 502xA to 502xD). In some embodiments, the plurality of driver systems (501yA to 501yD and 502xA to 502xD) and the multipole structures (510A to 510D) can be implemented in separate layers. The deflection structures 550A to 550D can be used as deflectors implemented in the deflection scanning unit 132 shown in FIG. 2 or the deflectors 309-1 and 309-2 shown in FIG. 3A. Each of the plurality of driver systems (501yA to 501yD and 502xA to 502xD) is electrically connected to a set of opposing electrodes implemented in the multipole structure (510A to 510D) and is configured to provide a plurality of discrete output states to the set of opposing electrodes implemented in the multipole structure. For example, driver 501yA can be electrically connected to a set of opposing electrodes implemented in multipole structure 510A and driver 502xA can be electrically connected to another set of opposing electrodes in multipole structure 510A. The deflection structures 550A to 550D and the deflection structures 450A to 450D (depicted in FIG. 4B) share the same functionality, such as manipulating an electron beam. The multipole structures 510A to 510D and the multipole structures 410A to 410D (depicted in FIG. 4B) share the same functionality to deflect an electron beam in one direction when provided with output states from the driver systems. The driver systems 501yA to 501yD and 502xA to 502xD and the driver systems 401yA to 401yD and 402xA to 402xD (depicted in FIG. 4B) share the same functionality to provide discrete output states to the multipole structures to deflect the beam. Additionally, although FIG. 4C shows four layers of the deflection structures 550A to 550D, it should be understood that the deflection structures can be implemented in any number of layers. In this embodiment, each of the plurality of layers is sized to a different length, such that when substantially the same output state is provided to each of the layers, the deflection angle from each layer is different. In some embodiments, each of the layers may be sized to a different ratio of the size of the smallest layer. The size of the first structure may be N, and the size of the second structure may be M, where the ratio of N to M satisfies a relationship. For example, in the embodiment of FIG. 4C, the lengths of the multipole structures 510A to 510D are N for 510A, 2N for 510B, 4N for 510C, and 8N for 510D, respectively. When the driver systems 501A to 501D and 502A to 502D provide the same output state to each of the multipole structures 510A to 510D, the multipole structure 510D produces the highest deflection angle due to its longest length (e.g., 8N) in the direction along the Z-axis direction (e.g., along the principal optical axis 100_1 as shown in FIG. 2), the multipole structure 510C produces the second highest deflection angle, the multipole structure 510B produces the third highest deflection angle, and the multipole structure 510A produces the smallest deflection angle. When the driver system provides the same output state to all the multipole structures, the deflection angle is proportional to the length of the multipole structure. Further, although FIG. 4C shows the size of the layer increasing in the traveling direction of the beam through the deflector (e.g., along the principal optical axis 100_1), it should be understood that different configurations of the size of the layer may be implemented in the deflection system. In some embodiments, one or more of the plurality of layers (such as the layer including the deflection structure 550A) may be implemented with a driver system including a linear amplifier having a limited output voltage swing to provide finer deflection control. That is, this layer may be configured to provide a variable output range rather than being limited to only discrete output states. This may enable embodiments to provide a high-resolution output voltage to the electrodes in one of the multi-layer structures. For example, when the scanning deflection system in an electron beam detection system is configured to deflect an electron beam equivalent to applying 155 V to a deflection of a single conventional multipole structure having the same size as that of 510A, the controller may configure the switch connected to the multipole structure (such as 510B) to transfer -37.5 V and +37.5 V from a discrete power supply connected thereto. To achieve the remaining part of the deflection equivalent to applying 5 V to a conventional multipole structure having the same size as that of 510A, the controller may configure the deflection structure (such as the deflection structure 550A) implemented with the aforementioned linear amplifier and apply -2.5 V and +2.5 V to the multipole structure. In some embodiments, only one layer of the multi-layer structure may be provided with a linear amplifier and configured to provide an output swing. This one layer may be the smallest layer among the multi-layer structures. The one layer configured to provide an output swing may constitute the finest control level for deflecting a charged particle beam. Referring now to FIG. 4D, which shows a plan view of an illustrative embodiment of a deflection structure 600 that can be implemented in an electron beam inspection system in accordance with an embodiment of the present invention. As shown in FIG. 4D, the deflection structure 600 includes a multipole structure 610, a first driver system 601y, and a second driver system 602x. The multipole structure 610 includes a first set of opposing electrodes 611A to 611B and a second set of opposing electrodes 612A to 612B that can be configured to deflect an electron beam in each deflection direction (such as the y direction or the x direction) based on the output states applied to each set. The deflection structure 600 of FIG. 4D is similar to the deflection structure 400 of FIG. 4A, except that the diameters of the electrodes 611A to 611D can be different. In addition, the diameters of the electrodes in different layers can be different. For example, as shown in FIG. 4E, the inner and outer diameters of the electrodes in the multipole structure 610A can be reduced relative to the inner and outer diameters of the other electrodes. In addition, in some embodiments, the diameters of the electrodes in the same layer can vary. For example, as shown in FIGS. 4F and 4G, the electrodes 712A to 712B can be different in diameter from the electrodes 711A to 711B. Referring now to FIG. 6, which is a flowchart illustrating an exemplary method 800 for controlling a plurality of drivers to dynamically deflect an electron beam in accordance with an embodiment of the present invention. The method 800 can be performed by an electron beam tool (e.g., the electron beam tool 100 of FIG. 2). Specifically, a controller of the electron beam tool (e.g., the controller 50 of FIG. 2) can perform the method 800. In step 810, a first driver system (e.g., the driver system 401yA of FIG. 4B) in a first deflection structure (e.g., the first deflection structure 450A of FIG. 4B) can provide a first set of discrete output states to a first set of opposing electrodes of a deflection scanning unit (e.g., the deflection scanning unit 132 of FIG. 2) to affect the electron beam. Affecting the beam can involve directing or deflecting the beam. In some embodiments, the first driver system is electrically connected to the first set of opposing electrodes and is configured to provide a plurality of discrete output states to the first set of opposing electrodes. In some embodiments, the output states can include -100 V, 0 V, and +100 V. In other embodiments, the output states can include -100 V, -50 V, 0 V, +50 V, and +100 V. It should be understood that different combinations of discrete output states can be provided by the driver system. In step 820, a second driver system (e.g., the driver system 402xA of FIG. 4B) in the first deflection structure can provide a second set of discrete output states to a second set of opposing electrodes of the deflection scanning unit to affect (e.g., direct) the electron beam. In some embodiments, the second driver system is electrically connected to the second set of opposing electrodes and is configured to provide a plurality of discrete output states to the second set of opposing electrodes. In some embodiments, such as embodiments in which the deflection system (e.g., deflection system 450 of FIG. 4B) includes another layer that includes a second deflection structure (e.g., deflection structure 450B of FIG. 4B), steps 830 and 840 may be further performed. In step 830, a third driver system (e.g., driver system 401yB of FIG. 4B) in the second deflection structure may provide a third set of discrete output states to a third set of opposing electrodes of the deflection scanning unit to affect (e.g., direct) the electron beam. In some embodiments, the third driver system is electrically connected to the third set of opposing electrodes and is configured to provide a plurality of discrete output states to the third set of opposing electrodes. In step 840, a fourth driver system (e.g., driver system 402xB of FIG. 4B) in the second deflection structure may provide a fourth set of discrete output states to a fourth set of opposing electrodes of the deflection scanning unit to affect (e.g., direct) the electron beam. In some embodiments, the fourth driver system is electrically connected to the fourth set of opposing electrodes and is configured to provide a plurality of discrete output states to the fourth set of opposing electrodes. In some embodiments, the second deflection structure may be placed in a layer different from the first deflection structure. Additionally, the sets of opposing electrodes may be any type of multipole structure (such as multipole structures 410A or 410B of FIG. 4B), such as a dipole (2-pole) structure, a quadrupole (4-pole) structure, an octupole (8-pole) structure, etc. In some embodiments, such as embodiments in which the deflection system 450 includes another layer that includes a third deflection structure (e.g., deflection structure 450C of FIG. 4B), step 850 may be further performed. In step 850, an indication that a linear driver system in the third deflection system controls the output states of another set of electrodes to affect the electron beam. In some embodiments, the linear driver system is electrically connected to the set of electrodes and is configured to provide continuous output states to the set of electrodes. The linear driver system can be used to deflect the beam in two directions (e.g., in the x direction and the y direction). Referring now to FIG. 7A, there is illustrated a charged particle beam device 700 (also referred to as device 700) incorporating charged particle beam deflectors 709-1 and 709-2 (also referred to as primary electron beam deflectors 709-1 and 709-2) in accordance with an embodiment of the present invention. The device 700 may include a charged particle source, such as an electron source configured to emit primary electrons from a cathode 701 and extract them using an extractor electrode 702 to form a primary electron beam 700B1 along a main optical axis 700-1. The device 700 may further include an anode 703, a condenser lens 704, a beam limiting aperture array 705, a signal electron detector 706, an objective lens 707, a scanning deflection unit including primary electron beam deflectors 709-1 and 709-2 configured to be controlled by a deflection control unit 720, a control electrode 714, and a sample 715. It should be understood that relevant components may be added, omitted, or reordered as needed. It should also be understood that in the context of the present invention, unless otherwise specified, a charged particle beam device may refer to an electron beam device, a primary charged particle beam may refer to a primary electron beam, and a charged particle beam deflector may refer to an electron beam deflector. The electron source (not shown in the figure) may include a heat source configured to emit electrons after supplying thermal energy to overcome the work function of the source, a field emission source configured to emit electrons after being exposed to a large electrostatic field, and the like. In the case of a field emission source, the electron source may be electrically connected to a controller configured to apply a voltage signal and adjust the voltage signal based on the desired landing energy, sample analysis, source characteristics, etc., such as controller 50 of FIG. 2. The extractor electrode 702 may be configured to extract or accelerate electrons emitted from the field emission gun, for example, to form a primary electron beam 700B1 that forms a virtual or real primary beam crossover (not shown) along the main optical axis 700-1. The primary electron beam 700B1 may be visualized as being emitted from the primary beam crossover. In some embodiments, the controller 50 may be configured to apply and adjust the voltage signal to the extractor electrode 702 to extract or accelerate the electrons generated by the electron source. The amplitude of the voltage signal applied to the extractor electrode 702 may be different from the amplitude of the voltage signal applied to the cathode 701. In some embodiments, the difference in the amplitudes of the voltage signals applied to the extractor electrode 702 and the cathode 701 may be configured to accelerate the electrons downstream along the main optical axis 700-1 while maintaining the stability of the electron source. As used in the context of the present invention, "downstream" refers to the direction along the path of the primary electron beam 700B1 starting from the electron source towards the sample 715. Referring to the positioning of the components of a charged particle beam device (e.g., device 700 of FIG. 7A), "downstream" may refer to the position of a component that is below or after another component along the path of the primary electron beam starting from the electron source, and "directly downstream" refers to the position of a second component that is below or after a first component along the path of the primary electron beam 700B1 such that there are no other active components between the first component and the second component. For example, as illustrated in FIG. 7A, the charged particle beam deflector 709-1 may be positioned downstream from the condenser lens 704 and the signal electron detector 706 may be positioned directly downstream from the beam limiting aperture array 705 such that there are no other optical or electro-optical components placed between the beam limiting aperture array 705 and the electron detector 706. As used in the context of the present invention, "upstream" may refer to the position of a component that is above or before another component along the path of the primary electron beam starting from the electron source, and "directly upstream" refers to the position of a second component that is above or before a first component along the path of the primary electron beam 700B1 such that there are no other active components between the first component and the second component. As used herein, an "active component" may refer to any component or assembly whose presence can change the electromagnetic field between a first component and a second component by generating an electric field, magnetic field, or electromagnetic field. The device 700 may include a condenser lens 704 configured to receive a part or a substantial part of the primary electron beam 700B1 and focus the primary electron beam 700B1 onto the beam limiting aperture array 705. The condenser lens 704 may be substantially similar to the condenser lens 110 of FIG. 2 and may perform substantially similar functions. Although shown as a magnetic lens in FIG. 7A, the condenser lens 704 may be an electrostatic, magnetic, electromagnetic wave, or compound electromagnetic lens, etc. The condenser lens 704 may be electrically coupled to the controller 50. The controller 50 may apply an electrical excitation signal to the condenser lens 704 to adjust the focusing magnification of the condenser lens 704 based on factors including (but not limited to) the operation mode, application, analysis to be performed, sample material to be detected, etc. The device 700 may further include a beam limiting aperture array 705 configured to limit the beam current of the primary electron beam 700B1 passing through the plurality of beam limiting apertures of the beam limiting aperture array 705. Although only one beam limiting aperture is illustrated in FIG. 7A, the beam limiting aperture array 705 may include any number of apertures having uniform or non-uniform aperture sizes, cross-sections, or pitches. In some embodiments, the beam limiting aperture array 705 may be disposed downstream of the condenser lens 704 or directly downstream of the condenser lens 704 and substantially perpendicular to the main optical axis 700-1. In some embodiments, the beam limiting aperture array 705 may be configured as a conductive structure including a plurality of beam limiting apertures. The beam limiting aperture array 705 may be connected to the controller 50 via a connector (not shown), and the controller 50 may be configured to indicate the voltage to be supplied to the beam limiting aperture array 705. The supplied voltage may be a reference voltage, such as ground potential. The controller 50 may also be configured to maintain or adjust the supplied voltage. The controller 50 may be configured to adjust the position of the beam limiting aperture array 705. The device 700 may include one or more signal electron detectors 706. The signal electron detectors 706 may be configured to detect substantially all secondary electrons and a part of the backscattered electrons based on the emission energy, emission angle, azimuth angle of the backscattered electrons, etc. In some embodiments, the signal electron detectors 706 may be configured to detect secondary electrons, backscattered electrons, or Auger electrons. Signal electrons emitted from the sample 715 with low emission energy (usually ≤50 eV) or small emission angles may include the secondary electron beam 700B2, and signal electrons with high emission energy (usually >50 eV) or medium emission angles may include a backscattered electron beam (not shown in the figure). In some embodiments, 700B2 may include secondary electrons, low-energy backscattered electrons, or high-energy backscattered electrons with small emission angles. It should be understood that although not shown, a part of the backscattered electrons may be detected by the signal electron detectors 706. In overlay metrology and detection applications, the signal electron detectors 706 may be suitable for detecting secondary electrons generated by the surface layer and backscattered electrons generated by deeper underlying layers (such as deep trenches or high aspect ratio holes). The device 700 may further include a compound objective lens 707 configured to focus the primary electron beam 700B1 onto the surface of the sample 715. The objective lens 707 may be further configured to focus signal electrons, such as secondary electrons having weak emission energy or backscattered electrons having high emission energy, onto the detection surface of a signal electron detector (e.g., the in-lens signal electron detector 706). The objective lens 707 may be substantially similar to the objective lens assembly 131 of FIG. 2 or may perform substantially similar functions as the objective lens assembly 131. In some embodiments, the objective lens 707 may include a cavity defined by the space between virtual planes 707A and 707B. It should be understood that the virtual planes 707A and 707B marked as dashed lines in FIG. 7A are only visual aids for illustrative purposes. The virtual plane 707A positioned closer to the condenser lens 704 may define the upper boundary of the cavity, and the virtual plane 707B positioned closer to the sample 715 may define the lower boundary of the cavity of the objective lens 707. As used herein, the "cavity" of an objective lens refers to the space defined by the elements of a magnetic lens configured to allow a primary electron beam to pass through, wherein the space is rotationally symmetric about the principal optical axis. The terms "within the cavity of the objective lens" or "inside the cavity of the objective lens" refer to the space defined by the virtual planes 707A and 707B and the inner surface of the magnetic lens directly exposed to the primary electron beam. The planes 707A and 707B may be substantially perpendicular to the principal optical axis 700-1. Although FIG. 7A illustrates a conical cavity, the cross-section of the cavity may be cylindrical, conical, staggered cylindrical, staggered conical, or any suitable cross-section. The device 700 may further include a scanning deflection unit including primary charged particle beam deflectors (e.g., electron beam deflectors) 709-1 and 709-2, which are configured to deflect the primary electron beam 700B1 and scan the primary electron beam 700B1 across the surface of the sample 715 to form a field of view (FOV). In some embodiments, the scanning deflection unit including the primary electron beam deflectors 709-1 and 709-2 may be referred to as a beam manipulator or a beam manipulator assembly. The dynamic deflection of the primary electron beam 700B1 may cause, for example, scanning of a desired area or region of interest of the sample 715 in a line-by-line scanning mode to generate SEs and BSEs for sample detection. One or more of the primary electron beam deflectors 709-1 and 709-2 may be configured to deflect the primary electron beam 700B1 in the X-axis or Y-axis or a combination of the X-axis and Y-axis. As used herein, the X-axis and Y-axis form Cartesian coordinates, and the primary electron beam 700B1 propagates along the Z-axis or the principal optical axis 700-1. Electrons are negatively charged particles that travel through an electro - optical column and can do so at high energy and high speed. One way to deflect electrons is to pass the electrons through an electric field or a magnetic field generated, for example, by holding a pair of plates at two different potentials, or passing a current through a deflection coil and other techniques. Changing the electric field or magnetic field across a deflector (such as primary electron beam deflector 709 - 1 or 709 - 2) can change the deflection angle of the electrons in the primary electron beam 700B1 based on factors including (but not limited to) electron energy, the magnitude of the applied electric field, the size of the deflector, etc. In some embodiments, one or both of the primary electron beam deflectors 709 - 1 and 709 - 2 may be located within the cavity of the objective lens 707. As illustrated in FIG. 7A, the primary electron beam deflectors 709 - 1 and 709 - 2 as a whole may be located within the cavity of the objective lens 707. In some embodiments, at least one primary electron beam deflector as a whole may be located within the cavity of the objective lens 707. The beam deflector (e.g., primary electron beam deflector 709 - 1) may be circumferentially disposed along the inner surface of the objective lens 707. One or more primary electron beam deflectors may be placed between the signal electron detector 706 and the control electrode 714. In some embodiments, all of the primary electron beam deflectors may be placed between the signal electron detector 706 and the control electrode 714. In some embodiments, the primary electron beam deflectors 709 - 1 and 709 - 2 may comprise electrostatic deflectors or magnetic deflectors. The electron beam deflector 709 - 1 may also be referred to as the "upper deflector" and the electron beam deflector 709 - 2 may be referred to as the "lower deflector". As used herein, "upper" and "lower" indicate the relative position of the deflector with respect to the trajectory of the primary electron beam 700B1. As used herein, the upper deflector refers to the deflector located upstream of the electron source and closer to the electron source, and the lower deflector refers to the deflector located downstream of the upper deflector and closer to the sample 715. Although FIG. 7A illustrates only two primary electron beam deflectors 709 - 1 and 709 - 2, it should be understood that the charged particle beam device 700 may include two or more deflectors as needed. In some embodiments, each of the upper deflector 709-1 and the lower deflector 709-2 may include a segmented deflector. FIG. 7B illustrates an exemplary structure of a segmented electron beam deflector 709-1 that conforms to an embodiment of the present invention. The electron beam deflector 709-1 may include sections 709-1A, 709-1B, and 709-1C coaxially disposed along the main optical axis 700-1. The sections 709-1A, 709-1B, and 709-1C may have substantially similar inner radii or different inner radii with respect to the main optical axis 700-1, and the lengths of the sections 709-1A, 709-1B, and 709-1C may be substantially similar or different. As illustrated, each section may include a multipole structure having eight electrodes 709-1e to 709-8e radially disposed with respect to the main optical axis 700-1 and configurable to act in different ways based on the voltage applied to each of the electrodes. Pairs of the plurality of electrodes may be combined such that deflection in a two-dimensional plane is possible. In some embodiments, each section (sections 709-1A, 709-1B, and 709-1C) may include a multipole structure having two electrodes (dipole), four electrodes (quadrupole), or eight electrodes (octupole) or any number of electrodes as needed. Each section (sections 709-1A, 709-1B, and 709-1C) may include the same number or different numbers of electrodes. Although FIG. 7B illustrates a deflector structure including three sections, and each section includes eight electrodes, the deflector may include fewer or more sections and fewer or more electrodes. In some embodiments, the number of sections in the upper deflector 709-1 and the lower deflector 709-2 may be different. It should be understood that although FIG. 7A illustrates an apparatus 700 including two segmented deflectors, two or more than two segmented deflectors may be used as needed. In some embodiments, the electrodes 709-1e to 709-8e of the sections 709-1A, 709-1B, and 709-1C may be held in place by a support structure (not shown in the figure) such as a ring, sleeve, bracket, and other support structures. The support structure may be made of a non-conductive material including (but not limited to) ceramics, glass, or the like. Referring back to FIG. 7A, the sample 715 can be placed on a plane substantially perpendicular to the main optical axis 700-1. The position of the plane of the sample 715 can be adjusted along the main optical axis 700-1 such that the distance between the sample 715 and the pole piece of the objective lens 707 can be adjusted. In some embodiments, the sample 715 can be electrically connected to the controller 50 via a connector (not shown), and the controller 50 can be configured to supply a voltage to the sample 715 to move the sample 715 along the main optical axis 700-1. The controller 50 can also be configured to maintain or adjust the supplied voltage. It should be understood that the sample 715 can be placed on a sample holder or stage configured to receive signals from the controller, such as to adjust the height of the sample along the main optical axis 700-1. In some embodiments, the movement of the sample 715 or the sample stage along the main optical axis 700-1 can be controlled using a mechanical, electromechanical mechanism, or other suitable movement mechanism. The apparatus 700 can further include a deflection control unit 720 (described with reference to FIG. 7C) configured to control the operation of the primary electron beam deflectors 709-1 and 709-2. Although the deflection control unit 720 is illustrated as a separate control unit in FIG. 7A, it can be integrated with the controller 50 such that it is part of the controller 50. The deflection control unit 720 can include circuitry and components configured to supply power, generate and supply electrical signals to one or more components (such as amplifiers, digital / analog converters, distributed output stages, etc.), and other functionality. In some embodiments, the deflection control unit 720 can include electronic driver circuitry that individually controls the operation of each section of the electron beam deflectors (e.g., the primary electron beam deflectors 709-1 and 709-2). Now referring to FIG. 7C, it illustrates an exemplary configuration of a deflection control unit 720 associated with a segmented charged particle beam deflector (e.g., the primary electron beam deflectors 709-1 and 709-2) in accordance with an embodiment of the present invention. As illustrated, each primary electron beam deflector can be electronically driven by a corresponding driver system. As an example, the deflection control unit 720 can include a driver system 725-1 associated with the primary electron beam deflector 709-1, and a driver system 725-2 associated with the primary electron beam deflector 709-2. The driver system 725-1 can include a scan control unit 730, a digital / analog converter 734-1, a variable gain amplifier 740-1, and distributed output stages 751-1, 752-1, and 753-1. It should be understood that although not shown, the driver system 725-1 can include other components and circuitry as appropriate for manipulating the primary electron beam traveling along the main optical axis 700-1, such as a power supply, a timing circuit, etc. The scan control unit 730 can be configured to generate and supply control signals 751-1a, 752-1a, and 753-1a, which are configured to activate the enabling or disabling state of the corresponding distributed output stage. The scan control unit 730 can be further configured to generate a deflection signal 732-1 configured to be applied to one or more segments 709-1A, 709-1B, and 709-1C of the primary electron beam deflector 709-1. In some embodiments, the deflection control unit 720 can include a single scan control unit 730 configured to generate and supply control signals and deflection signals for multiple driver systems (e.g., 725-1 and 725-2). The deflection signal 732-1 can include a voltage signal applied to one or more segments of the primary electron beam deflector. In some embodiments, the driver system 725-1 can include circuitry configured to convert the digital deflection signal 732-1 into an analog deflection signal, such as a digital / analog converter 734-1. The driver system 725-1 can further include circuitry configured to receive the analog deflection signal and generate an adjustable amplitude of the deflection signal, such as a variable gain amplifier 740-1. Generally speaking, a VGA is a signal modulating amplifier with electronically definable voltage gain. The variable gain amplifier 740-1 can include an analog VGA, or a digital VGA, or any suitable circuitry. In some embodiments, the driver system 725-1 can further include circuitry implemented as a plurality of directly coupled amplifiers, or relays, or other suitable circuitry, such as a distributed output stage. In an exemplary configuration of a deflection control unit 720, such as that illustrated in FIG. 7C, sections 709-1A, 709-1B, and 709-1C of the primary electron beam deflector 709-1 can be respectively connected to distributed output stages 751-1, 752-1, and 753-1. The enabled or disabled state of the distributed output stages 751-1, 752-1, and 753-1 can be activated by respectively controlling signals 751-1a, 752-1a, and 753-1a supplied by the scan control unit 730. The variable gain amplifier 740-1 can be configured to output an adjustable amplitude of the deflection signal 732-1 applied to the primary electron beam deflector 709-1 while maintaining a low noise level. In an enabled mode activated by a control signal supplied by the scan control unit 730, a distributed output stage (e.g., 751-1, 752-1, or 753-1) can reproduce the output signal from the variable gain amplifier 740-1 to drive the corresponding section of the primary electron beam deflector 709-1. As an example, the control signal 751-1a can activate the enabled state of the distributed output stage 751-1 such that the distributed output stage 751-1 can reproduce an adjusted output signal containing the adjustable amplitude of the deflection signal 732-1 from the variable gain amplifier 740-1 to be applied to section 709-1A of the primary electron beam deflector 709-1. The primary electron beam can be deflected based on the deflection signal applied to section 709-1A of the primary electron beam deflector 709-1. In some embodiments, in a disabled mode of the distributed output stage (e.g., 751-1, 752-1, or 753-1), the output signal can be grounded and the distributed output stage can be powered off. This configuration can help reduce power consumption, among other advantages. The driver system 725-2 can be substantially similar to the driver system 725-1 and can perform substantially similar functions as the driver system 725-1 to control the primary electron beam deflector 709-2. It should be understood that the device 700 can include two or more than two primary electron beam deflectors and corresponding driver systems. Some of the advantages of a beam deflection system that includes segmented deflectors (e.g., primary electron beam deflectors 709-1 and 709-2) controlled by a driver system such as that illustrated in FIG. 7C (e.g., driver system 725-1) include, but are not limited to: i. Adjusting the effective length or deflection sensitivity of the beam deflector by activating or deactivating individual sections of the primary electron beam deflector. ii. Extending the operating range of the beam deflector to provide a wide range of deflection sensitivities based on the desired FOV and the landing energy of the primary electron beam. iii. Adjusting the position of the deflection center based on the section and the number of sections activated to deflect the primary electron beam. Referring now to FIG. 7D, which illustrates exemplary deflection field distributions of primary electron beam deflectors 709-1 and 709-2 in accordance with embodiments of the present invention. In some embodiments, the primary electron beam deflectors 709-1 and 709-2 may comprise electrostatic deflectors, and the deflection voltage applied to the electrodes of the section (e.g., 709-1e to 709-8e of FIG. 7B) may generate an electrostatic deflection field experienced by the primary electron beam 700B1 traveling along the main optical axis 700-1. As shown in FIG. 7D, the deflection field distribution patterns 762-1, 762-2, 764-1 and 764-2 represent exemplary distributions of the deflection field experienced by the primary electron beam 700B1 traveling downstream of the electron source to the sample (e.g., sample 715 of FIG. 7A). In some embodiments, the desired deflection sensitivity of the primary electron beam deflector may be based on the landing energy of the primary electron beam or the desired field of view (FOV). In the context of the present invention, "deflection sensitivity" may refer to the displacement or deflection of the primary electron beam from its initial path per unit change in the deflection field that causes the deflection. As used herein, the landing energy of the electron beam may be defined as the energy at which the electrons of the primary electron beam strike the sample. The landing energy of the primary electron beam is equal to the potential difference between the electron emission source and the stage / sample. For example, if the source is operating at -10 kV and the sample is applied with -5 kV, the landing energy of the primary electrons may be 5 keV. Generally, in SEM, the landing energy may range from 0.2 keV to 50 keV based on applications, materials being studied, tooling conditions, and other factors. In some embodiments, it may be desirable to image a sample using a low landing energy (0.2 to 10 keV). At low landing energies, the deflection sensitivity of the primary electron beam deflectors 709-1 and 709-2 may be higher, and thus to obtain a certain FOV, the required deflection voltage signals from the corresponding driver systems 725-1 and 725-2 may be lower. Generally, digital-to-analog converters (DACs) such as digital / analog converters 734-1 and 734-2 have optimal linearity when the analog output voltage is about 50%-70% of the total voltage output range. If the required deflection voltage signal is below the optimal linearity range of the digital / analog converter 734-1, then, for example, the induced noise level may be higher, and so on. In this scenario, the scan control unit (e.g., scan control unit 730 of FIG. 7C) may generate and supply only a control signal (e.g., control signal 752-1a of FIG. 7C) to activate the enabled state of the distributed output stage 752-1 such that only section 709-1B may receive the deflection signal (e.g., deflection signal 732-1 of FIG. 7C), thereby creating a deflection field distribution pattern 764-1. The reduced deflection sensitivity due to the reduced effective deflector length may cause an increase in the required deflection voltage signal, which may bring the digital / analog converter 734-1 and the driver system 725-1 back to the optimal linear performance state. The electrons of the incoming primary electron beam (e.g., primary electron beam 700B1 of FIG. 7A) may be deflected from the initial trajectory based on the deflection field distribution and intensity. The section 709-1B of the primary electron beam deflector 709-1 may deflect the primary electron beam based on the deflection voltage signal between two or more electrodes. The scan control unit 730 may generate and supply a control signal 752-2a to activate the enabled state of the distributed output stage 752-2 such that section 709-2B may receive the deflection signal to deflect the primary electron beam, thereby creating a deflection field distribution pattern 764-2. The scan control unit 730 may be further configured to supply control signals to activate the disabled states of the distributed output stages 751-1, 753-1, 751-2, and 753-2, thereby grounding and disabling the distributed output stages. In some embodiments, imaging the sample with a high landing energy (> 10 keV) may be desired. At high landing energies, the deflection sensitivities of the primary electron beam deflectors 709-1 and 709-2 may be higher, and thus to obtain a certain FOV, the required deflection voltage signals from the corresponding driver systems 725-1 and 725-2 may be higher. Variable gain amplifiers such as variable gain amplifiers 740-1 and 740-2 themselves may not be able to provide sufficient signal gain that the deflectors may require. In this scenario, the scan control unit 730 may generate and supply control signals 751-1a, 752-1a, and 753-1a to respectively activate the enabling states of all corresponding distributed output stages 751-1, 752-1, and 753-1, so that all segments 709-1A, 709-1B, and 709-1C may receive the deflection signal 732-1, thereby creating a deflection field distribution pattern 762-1, which is wider than the deflection field distribution pattern 764-1. The wide deflection field distribution may result in an increase in the effective length of the primary electron beam deflector 709-1, thereby producing enhanced deflection sensitivity. The effective length of the deflector may be increased to meet the deflection sensitivity requirements to obtain a large FOV. The scan control unit 730 may further generate and supply control signals 751-2a, 752-2a, and 753-2a to respectively activate the enabling states of all corresponding distributed output stages 751-2, 752-2, and 753-2, so that all segments 709-2A, 709-2B, and 709-2C may receive the deflection signal 732-2, thereby creating a deflection field distribution pattern 762-2, which is wider than the deflection field distribution pattern 764-2. In this configuration, the deflection field distribution patterns 762-1 and 762-2 are wider along the main optical axis 700-1 compared to the deflection field distribution patterns 764-1 and 764-2, thereby producing higher deflection sensitivity. Although FIG. 7D shows a uniform deflection field distribution between the primary electron beam deflectors 709-1 and 709-2, it should be understood that the deflection field distribution may also be non-uniform. Additionally or alternatively, the deflector design, including the number of electrodes, the number of segments, the inner radius of the segments, the electrode material of the amplifier; or the voltage gain and other factors, may be adjusted to adjust the deflection sensitivity and FOV within the desired landing energy range. Referring now to FIG. 7E, which illustrates exemplary deflection field distributions of primary electron beam deflectors 709-1 and 709-2 in accordance with embodiments of the present invention. In some embodiments, it may be desirable to reduce off-axis aberrations at large FOVs to maintain high image quality. In this context, the scan control unit 730 may be configured to supply control signals to activate the enabled states of distributed output stages 751-1 and 753-2 such that segments 709-1A and 709-2C may receive deflection signals and deflect the primary electron beam based on the generated deflection field distribution patterns 766-1 and 766-2. Thereby, the effective deflection length d2 or deflection sensitivity may be increased. In some embodiments, the scan control unit 730 may be configured to supply control signals to activate the enabled states of distributed output stages 752-1 and 752-2 such that segments 709-1B and 709-2B may receive deflection signals and deflect the primary electron beam based on the generated deflection field distribution patterns 768-1 and 768-2. In this configuration, the effective deflection length d1 may be less than d2 and the overall deflection sensitivity may be lower. It should be understood that these are exemplary configurations, and other combinations of activation of different segments of different beam deflectors may also be used as needed to adjust the deflection sensitivity over a wide range of landing energies and FOVs. Referring now to FIG. 8A, which illustrates an exemplary configuration of a deflection control unit 820 associated with charged particle beam deflectors (e.g., primary electron beam deflectors 809-1 and 809-2) in accordance with an embodiment of the present invention. The primary electron beam deflectors 809-1 and 809-2 may each include a hybrid deflector including an electrostatic deflector (e.g., 809-1E, 809-2E) and a magnetic deflector (e.g., 809-1M, 809-2M). As illustrated, each primary electron beam deflector may be electronically driven by a corresponding drive system. As an example, the deflection control unit 820 may include a drive system 825-1 associated with the primary electron beam deflector 809-1, and a drive system 825-2 associated with the primary electron beam deflector 809-2. The drive system 825-1 may include a scan control unit 830, drive control units 845-1E and 845-1M, and relays 841-1E and 842-1M respectively controlled by control signals 843-1 and 844-1 generated by the scan control unit 830. The drive system 825-2 may include a scan control unit 830, drive control units 845-2E and 845-2M, and relays 841-2E and 842-2M respectively controlled by control signals 843-2 and 844-2 generated by the scan control unit 830. It should be understood that although not illustrated, the drive systems 825-1 and 825-2 may include other components and circuitry as may be appropriately required for manipulating the primary electron beam traveling along the main optical axis 800-1, such as power supplies, timing circuits, and the like. It should be understood that the relays (e.g., relays 841-1E, 841-2E, 842-1M, and 842-2M) are merely examples of functional requirements for switching between signals and a ground state to respectively activate or deactivate the deflectors. Other suitable electrical switching mechanisms (such as but not limited to electrical switches, distributed output gates) may also be used. Hybrid deflectors including electrostatic deflectors and magnetic deflectors, such as primary electron beam deflectors 809-1 and 809-2, may be suitable for obtaining a large FOV within a wide range of landing energies. This is because the deflection sensitivity of the electrostatic deflector (e.g., 809-1E) may be higher than that of the magnetic deflector at low landing energies, and the deflection sensitivity of the magnetic deflector (e.g., 809-1M) may be higher than that of the electrostatic deflector at high landing energies. In addition to the higher deflection sensitivity of the magnetic deflector at high landing energies, the scan speed of the magnetic deflector is slow. At high landing energies, the signal electrons may mainly include backscattered electrons (BSEs) from deeper layers of the sample. Due to the low BSE yield, the required sampling rate may not be very high, which may allow the magnetic deflector to be appropriately used at high landing energies. At low landing energies, the scan control unit 830 can generate a control signal 843-1 configured to activate the relay 841-1E to enable the drive control unit 845-1E. The scan control unit 830 can be further configured to supply a deflection signal to the drive control unit 845-1E for application to the electrostatic deflector 809-1E of the primary electron beam deflector 809-1. However, at high landing energies, the scan control unit 830 can generate a control signal 844-1 configured to activate the relay 842-1M to enable the drive control unit 845-1M. The scan control unit 830 can be further configured to supply a deflection signal to the drive control 845-1M for application to the magnetic deflector 809-1M. Thus, the electrostatic and magnetic deflectors of the hybrid primary electron beam deflector 809-1 can be configured to deflect the primary electron beam to obtain a large FOV over a wide range of landing energies while maintaining high image quality. As shown in FIG. 8A, the electrostatic deflectors 809-1E and 809-2E are positioned upstream relative to the corresponding magnetic deflectors 809-1M and 809-2M. In some embodiments, the electrostatic deflectors 809-1E and 809-2E and the magnetic deflectors 809-1M and 809-2M can be coaxially disposed along the main optical axis 800-1. The inner radii and lengths of the electrostatic deflectors 809-1E and 809-2E and the magnetic deflectors 809-1M and 809-2M can be substantially similar or different. In some embodiments, the electrostatic deflectors 809-1E and 809-2E can include segmented deflectors. In some embodiments, the electrostatic deflectors 809-1E and 809-2E can be positioned downstream relative to the corresponding magnetic deflectors 809-1M and 809-2M, or any combination of relative positions may be possible. Referring now to FIG. 8B, which illustrates an exemplary configuration of the deflection control unit 821 in accordance with an embodiment of the present invention. Compared to the deflection control unit 820 of FIG. 8A, in the primary electron beam deflector 809-1, the electrostatic deflector 809-1E can be positioned substantially coplanar with the magnetic deflector 809-1M, and in the primary electron beam deflector 809-2, the electrostatic deflector 809-2E can be positioned substantially coplanar with the magnetic deflector 809-2M such that the electrostatic and magnetic fields substantially overlap. In this configuration, the radii of the magnetic deflectors 809-1M and 809-2M can be greater than the corresponding electrostatic deflectors 809-1E and 809-2E. This configuration of the coplanar arrangement of the electrostatic and magnetic deflectors can be desirable in reducing the total length of the electron optical column or in compact design options for the electron optical column of a charged particle beam device. Referring now to FIG. 8C, which illustrates an exemplary configuration of a deflection control unit 822 in accordance with an embodiment of the present invention. The electrostatic deflector 809-1E may be positioned downstream of the magnetic deflector 809-1M, and the electrostatic deflector 809-2E may be positioned upstream of the magnetic deflector 809-2M. Similar to the deflection control units 820 and 821, the electrostatic and magnetic deflectors may be activated at different landing energies when they operate independently. However, in the context of co-tuning operation of the electrostatic and magnetic deflectors, the electrostatic deflectors 809-1E and 809-2E may provide a faster scanning speed within a small FOV, and the magnetic deflectors 809-1M and 809-2M may provide a static excitation to direct the FOV scanned by the electrostatic deflectors to different positions within a larger FOV. In some embodiments, the magnetic deflectors 809-1M and 809-2M may have a smaller scanning bandwidth to reduce the noise level and provide a slow-scanning deflection signal. This configuration may reduce the required voltage of the electrostatic deflector because the required FOV may be smaller. This may be beneficial when the landing energy of the primary electron beam is high. In some embodiments, the electrostatic deflector or the magnetic deflector or both may be activated based on the landing energy and the desired FOV. For example, in a low landing energy mode, only the electrostatic deflector (e.g., 809-1E or 809-2E) may be activated, in a medium landing energy mode, only the magnetic deflector (e.g., 809-1M or 809-2M) may be activated, and in a high landing energy mode, both the electrostatic deflector and the magnetic deflector may be activated simultaneously. In the case where the electrostatic deflector and the magnetic deflector are activated simultaneously, the effective deflection length may be longer along the main optical axis 800-1 when the magnetic deflectors 809-1M and 809-2M are positioned downstream of the corresponding electrostatic deflectors 809-1E and 809-2E. Additionally, in the case where both the electrostatic deflector and the magnetic deflector are activated simultaneously, the deflection field strength is stronger when the electrostatic deflectors 809-1E and 809-2E are coplanar with the corresponding magnetic deflectors 809-1M and 809-2M. Referring now to FIG. 8D, which illustrates an exemplary configuration of a hybrid deflector 810 in accordance with an embodiment of the present invention. The hybrid deflector 810 may include an electrostatic deflector formed by an electrostatic electrode 860 and a magnetic deflector formed by winding coils 870 on protrusions of the electrostatic electrode 860. In some embodiments, the protrusions may be formed on the outer surface of the electrostatic electrode 860, oriented away from the main optical axis 800-1 (represented as the z-axis extending into and out of the paper), such that the electrostatic electrode 860 may also serve as a pole piece for the magnetic deflector. Referring now to FIGS. 9A and 9B, which are schematic diagrams illustrating an exemplary configuration of a charged particle beam device 900 including an adjustable sample stage in accordance with an embodiment of the present invention. The charged particle beam device 900 (also referred to as the device 900) may include an electron beam device. The device 900 may include a low landing energy primary electron beam 900B1 or a high landing energy primary electron beam 900B3 traveling along the main optical axis 900-1 towards the sample 915, primary electron beam deflectors 909-1 and 909-2, an objective lens assembly 907, and a control electrode 914. The position of the sample 915 of the device 900 may be adjustable along the main optical axis 900-1 as compared to the device 700. The position of the sample 915 may be adjusted along the main optical axis 900-1 relative to other components including the control electrode 914, the objective lens 907, etc. The sample 915 may be disposed on a plane 915P substantially perpendicular to the main optical axis 900-1. FIG. 9A illustrates a first position of the plane 915P along which the sample 915 is disposed, thereby defining a distance WD1 between the sample 915 and the pole piece of the objective lens 907. Also illustrated is an exemplary deflection path of the low landing energy primary electron beam 900B1 on the sample 915. In some embodiments, the position of the plane 915P along which the sample 915 is disposed may be dynamically adjusted, for example, based on feedback associated with detection efficiency, detection distribution, imaging resolution, analysis to be performed, etc. In some embodiments, the sample 915 may be disposed on a sample stage (not shown in the figure) or a sample holder (not shown in the figure). In this configuration, the position of the sample stage or the sample holder may be adjusted such that the position of the sample 915 may be adjusted. Although not shown in the figure, it should be understood that the position of the sample 915 or the sample stage / holder may be adjusted using electromechanical components including, but not limited to, piezoelectric motors, actuators, micromanipulators, etc. Other micromotion mechanisms may also be used, including, but not limited to, mechanical, electromechanical mechanisms. One of several ways to maintain a large FOV over a large range of landing energies may include increasing the working distance WD1 between the sample 915 and the pole piece of the objective lens 907. The working distance may be adjusted, for example, by lowering the sample 915 or lowering the stage holding the sample. The low landing energy primary electron beam 900B1 may be focused on the surface of the sample 915 by the objective lens 907 and the deflectors 909-1 and 909-2 may scan the beam 900B1 over the sample 915 to form the FOV. It should be understood that as shown in FIG. 9A, the low landing energy primary electron beam 900B1 may be deflected a relatively large distance away from the main optical axis 900-1 due to the higher deflection sensitivity of the electrostatic primary electron beam deflector 909-1. FIG. 9B illustrates a second position of the plane 915P along which the sample 915 is disposed, thereby defining a second working distance WD2 between the sample 915 and the pole piece of the objective lens 907. The second working distance WD2 can be greater than the first working distance WD1 such that the sample 915 is远离 the pole piece of the objective lens 907 along the principal optical axis 900-1. As shown in FIG. 9B, the high landing energy primary electron beam 900B3 can be deflected a smaller distance compared to the low landing energy primary electron beam 900B1 because the deflection sensitivity of the electrostatic deflectors 909-1 and 909-2 can be lower. The increase in the vertical distance between the samples 915 can allow the high landing energy primary electron beam 900B3 to travel a longer distance before impinging on the sample 915 such that a larger FOV can be obtained. In some embodiments, reducing the position of the plane 915P along which the sample 915 is disposed can increase the objective lens focal length and reduce the required magnetic lens excitation to focus the primary electron beam 900B3 on the sample 915 to avoid magnetic saturation on the objective lens pole piece. Referring now to FIG. 10, FIG. 10 is a process flow diagram representing an exemplary method 1000 for deflecting a primary charged particle beam through a deflection scanning unit of a charged particle beam device (e.g., device 700) in accordance with an embodiment of the present invention. The steps of method 1000 can be performed by the device 700 of FIG. 7A (e.g., implemented on a computing device characteristic (e.g., for illustrative purposes, the controller 50 of FIG. 1) or otherwise using the computing device characteristic). It should be understood that the illustrated method 1000 can be modified to change the step order and include additional steps. In step 1010, a first charged particle beam deflector (e.g., the primary electron beam deflector 709-1 of FIG. 7A) can deflect a primary electron beam (e.g., the primary electron beam 700B1 of FIG. 7A). The primary electron beam deflector can include an electrostatic deflector, a magnetic deflector, or a hybrid deflector including an electrostatic deflector and a magnetic deflector. The first electrostatic deflector can include a segmented deflector having a multipole structure with two or more than two electrodes. In step 1020, a second primary electron beam deflector (e.g., the primary electron beam deflector 709-2 of FIG. 7A) can deflect the primary electron beam. The second primary electron beam deflector can include an electrostatic deflector, a magnetic deflector, or a hybrid deflector including an electrostatic deflector and a magnetic deflector. The second primary electron beam deflector can be positioned downstream of the first primary electron beam deflector. The second electrostatic deflector can include a segmented deflector having a plurality of segments (e.g., segments 709-1A, 709-1B, and 709-1C of FIG. 7B) coaxially disposed along the principal optical axis 700-1, each segment including a multipole structure with two or more than two electrodes. In step 1030, a controller having a circuit system (e.g., the deflection control unit 720 of FIG. 7A or FIG. 7C) can individually control the operation of each of the plurality of segments of the first and second primary electron beam deflectors. The controller can include a driver system associated with the first primary electron beam deflector (e.g., the first driver system 725-1 of FIG. 7C), and a second driver system associated with the second primary electron beam deflector (e.g., the second driver system 725-2 of FIG. 7C). The first driver system or the second driver system can include a scan control unit (e.g., the scan control unit 730 of FIG. 7C) configured to generate and supply control signals (e.g., 751-1a, 752-1a, and 753-1a of FIG. 7C). The control signals can initiate an enabled or a disabled state of a corresponding distributed output stage. The scan control unit can be further configured to generate deflection signals (e.g., the deflection signal 732-1 of FIG. 7C) configured to be applied to one or more segments of the primary electron beam deflector. The driver system can further include circuitry for converting digital deflection signals to analog deflection signals. The driver system can further include circuitry configured to receive an analog deflection signal from a digital / analog converter (DAC) and generate an adjustable amplitude of the deflection signal. The driver system can further include circuitry configured to function as a switching mechanism, or a distributed output stage implemented as a direct-coupled amplifier, or a relay, or other suitable circuitry. In an exemplary configuration of the deflection control unit, segments of the primary electron beam deflector can be connected to distributed output stages (e.g., the distributed output stages 751-1, 752-1, and 753-1 of FIG. 7C). The enabled or disabled state of the distributed output stage can be initiated by a control signal supplied by the scan control unit. A variable gain amplifier (e.g., the variable gain amplifier 740-1 of FIG. 7C) can be configured to output an adjustable amplitude of the deflection signal applied to the primary electron beam deflector while maintaining a low noise level. In an enabled mode initiated by a control signal supplied by the scan control unit, the distributed output stage can reproduce the output signal from the variable gain amplifier to drive the corresponding segment of the primary electron beam deflector. As an example, the control signal 751-1a can initiate the enabled state of the distributed output stage 751-1 such that the distributed output stage 751-1 can reproduce an adjusted output signal including the adjustable amplitude of the deflection signal 732-1 from the variable gain amplifier 740-1 to be applied to the segment 709-1A of the primary electron beam deflector 709-1. The primary electron beam can be deflected based on the deflection signal applied to the segment of the primary electron beam deflector. Referring now to FIG. 11, FIG. 11 is a process flow diagram showing an exemplary method for deflecting a primary charged particle beam through a deflection scanning unit of a charged particle beam device (e.g., device 700) in accordance with an embodiment of the present invention. The method steps may be performed by device 700 of FIG. 7A (e.g., on a feature of a computing device (e.g., controller 50 of FIG. 1 for illustrative purposes) or otherwise using features of a computing device). It should be understood that the illustrated method 1100 may be modified to change the order of steps and include additional steps. In step 1110, a first charged particle beam deflector (e.g., primary electron beam deflector 809-1 of FIG. 8A) may deflect a primary electron beam. The primary electron beam deflector may include a hybrid deflector including an electrostatic deflector and a magnetic deflector. In step 1120, a second primary electron beam deflector (e.g., primary electron beam deflector 809-2 of FIG. 8A) may deflect the primary electron beam. The second primary electron beam deflector may include a hybrid deflector including an electrostatic deflector and a magnetic deflector. The second primary electron beam deflector may be positioned downstream of the first primary electron beam deflector. The first and second hybrid deflectors may be disposed along the main optical axis 800-1. In step 1130, a first driver system (e.g., driver system 825-1 of FIG. 8A) may be associated with the first primary electron beam deflector (e.g., primary electron beam deflector 809-1), and a driver system (e.g., driver system 825-2 of FIG. 8A) may be associated with the second primary electron beam deflector. The first and second driver systems may individually control the electrostatic and magnetic deflectors of the first and second primary electron beam deflectors. The driver system may include a scan control unit (e.g., scan control unit 830 of FIG. 8A), a driver control unit (e.g., driver control units 845-1E and 845-1M of FIG. 8A), and relays (e.g., relays 841-1E and 842-1M of FIG. 8A) controlled by control signals (e.g., control signals 843-1 and 844-1) generated by the scan control unit. Hybrid deflectors including electrostatic and magnetic deflectors, such as primary electron beam deflectors, may be suitable for obtaining a large FOV within a wide range of landing energies. This is because the deflection sensitivity of the electrostatic deflector (e.g., 809-1E) may be higher than that of the magnetic deflector at low landing energies, and the deflection sensitivity of the magnetic deflector (e.g., 809-1M) may be higher than that of the electrostatic deflector at high landing energies. In some embodiments, a controller may control a charged particle beam system. The controller may include a computer processor. The controller may direct components of the charged particle beam system to perform various functions, such as controlling various actuators for manipulating one or more electron beams. The controller may include a memory that is a storage medium, such as a hard disk, cloud storage, random access memory (RAM), other types of computer-readable memory, and the like. The controller may communicate with cloud storage. A non-transitory computer-readable medium may be provided that stores instructions for the processor of controller 50 to dynamically deflect an electron beam or perform other functions and methods in accordance with the present invention. Common forms of non-transitory media include, for example, floppy disks, flexible disks, hard disks, solid state disk drives, magnetic tape, or any other magnetic data storage medium. In some embodiments, the storage medium may include a CD-ROM, any other optical data storage medium, any physical medium with a pattern of holes, RAM, PROM, and EPROM, FLASH-EPROM, or any other flash memory, NVRAM, cache memory, registers, any other memory chip or cartridge, and network-connected versions thereof. The embodiments can be further described using the following terms: 1. A device, comprising: a first charged particle beam manipulator located at a first layer and configured to affect a charged particle beam; and a second charged particle beam manipulator located at a second layer and configured to affect the charged particle beam, wherein each of the first charged particle beam manipulator and the second charged particle beam manipulator comprises: a plurality of electrodes having a first set of opposing electrodes and a second set of opposing electrodes; a first driver system electrically connected to the first set of opposing electrodes and configured to provide a plurality of first discrete output states to the first set of opposing electrodes; and a second driver system electrically connected to the second set of opposing electrodes and configured to provide a plurality of second discrete output states to the second set of opposing electrodes. 2. The device according to item 1, wherein the first driver system is configured such that the first set of opposing electrodes can deflect the charged particle beam in a first direction. 3. The device according to item 2, wherein the second driver system is configured such that the second set of opposing electrodes can deflect the charged particle beam in a second direction perpendicular to the first direction. 4. The device according to item 1, wherein the first driver system is configured to provide discrete output states to the first set of opposing electrodes to deflect the charged particle beam in a first direction. 5. The device according to item 4, wherein the second driver system is configured to provide discrete output states to the second set of opposing electrodes to deflect the charged particle beam in a second direction substantially perpendicular to the first direction. 6. The device according to item 1, wherein the first charged particle beam manipulator is configured to deflect the charged particle beam at a first angle and the second charged particle beam manipulator is configured to deflect the charged particle beam at a second angle. 7. The device according to any one of items 1 to 6, wherein each of the first driver system and the second driver system comprises switches for providing the plurality of first discrete output states and the plurality of second discrete output states. 8. The device according to any one of items 1 to 6, wherein each of the first driver system and the second driver system comprises a plurality of power suppliers, and each of the plurality of power suppliers provides a discrete output state. 9. The device according to any one of items 1 to 6, wherein the first driver system comprises a first power supplier configured to provide the plurality of first discrete output states, and the second driver system comprises a second power supplier configured to provide the plurality of second discrete output states. 10. The device according to item 1, wherein the first charged particle beam manipulator and the second charged particle beam manipulator have equal sizes. 11. The device according to item 1, wherein the first charged particle beam manipulator has a size N and the second charged particle beam manipulator has a size M, wherein M is an integer multiple of N. 12. The device according to item 11, wherein N defines a length of the first charged particle beam manipulator, and M defines a length of the second charged particle beam manipulator.13. The device of claim 1, further comprising: a third charged particle beam manipulator configured to affect the charged particle beam, the third charged particle beam manipulator comprising: a plurality of electrodes; a driver system electrically connected to the plurality of electrodes and configured to provide a continuous output state to the plurality of electrodes. 14. The device of claim 1, wherein the first layer includes a plurality of charged particle beam manipulators. 15. The device of claim 1, further comprising a controller for generating various control signals to control the first driver system and the second driver system. 16. The device of claim 1, wherein each of the first charged particle beam manipulator and the second charged particle beam manipulator includes a set of electrodes formed in a substrate. 17. A method for affecting a charged particle beam passing through a deflection scanning unit, the method comprising: providing, by a first driver system, a first set of discrete output states to a first set of opposing electrodes of a first manipulator of the deflection scanning unit; and providing, by a second driver system, a second set of discrete output states to a second set of opposing electrodes of the first manipulator of the deflection scanning unit. 18. The method of claim 17, further comprising: providing, by a third driver system, a third set of discrete output states to a third set of opposing electrodes of a second manipulator of the deflection scanning unit; and providing, by a fourth driver system, a fourth set of discrete output states to a fourth set of opposing electrodes of the second manipulator of the deflection scanning unit, wherein providing the third set of discrete output states and the fourth set of discrete output states enables the second manipulator to affect the charged particle beam passing through the deflection scanning unit. 19. The method of any one of claims 17 and 18, further comprising: controlling a linear driver system to affect the charged particle beam, wherein the linear driver system controls the state of a set of electrodes of a third manipulator located at a third layer. 20. A non-transitory computer-readable medium including an instruction set executable by one or more processors of a controller to cause the controller to execute a method for deflecting a charged particle beam to scan a sample, the method comprising: instructing a first driver system connected to a first set of opposing electrodes to control a first set of discrete output states to cause the first set of opposing electrodes of a first manipulator to affect a charged particle beam; and instructing a second driver system connected to a second set of opposing electrodes to control a second set of discrete output states to cause the second set of opposing electrodes of the first manipulator to affect the charged particle beam, wherein the first driver system, the first set of opposing electrodes, the second driver system, and the second set of opposing electrodes are implemented in a first layer.21. The computer-readable medium as recited in clause 20, wherein the instruction set is executable by the one or more processors of the controller to cause the controller to further perform: instructing a third driver system connected to a third set of opposing electrodes to control a third set of discrete output states such that the third set of opposing electrodes of a second manipulator affects the charged particle beam; and instructing a fourth driver system connected to a fourth set of opposing electrodes to control a fourth set of discrete output states such that the fourth set of opposing electrodes of the second manipulator affects the charged particle beam, wherein the third driver system, the third set of opposing electrodes, the fourth driver system, and the fourth set of opposing electrodes are implemented in a second layer. 22. The computer-readable medium as recited in any one of clauses 20 and 21, wherein the instruction set executable by the one or more processors of the controller causes the controller to further perform: instructing a linear driver system connected to a set of electrodes to control the output state to affect the charged particle beam, wherein the linear driver system and the electrodes are implemented in another layer. 23. A deflector structure comprising: a plurality of electrode carriers, each of the carriers including a set of electrodes configured to surround a charged particle beam of a scanning charged particle microscope and to substantially transmit the charged particle beam through the center of the set of electrodes of each of the carriers, wherein each electrode of the set is configured to be driven by a driver providing a plurality of discrete output states. 24. The deflector structure as recited in clause 23, wherein a first carrier of the carriers has a size or shape different from a size or shape of a second carrier of the carriers. 25. The deflector structure as recited in clause 23, wherein the plurality of discrete output states includes a first voltage and a second voltage. 26. The deflector structure as recited in clause 23, wherein the deflector structure is formed as a microelectromechanical system. 27. The device as recited in clause 1, wherein the charged particle beam includes an electron beam. 28. The deflector structure as recited in clause 23, wherein each carrier is sized at a different ratio of the size of one of the smallest carriers of the carriers. 29. The deflector structure as recited in clause 23, wherein the driver includes a power supply. 30. The deflector structure as recited in clause 23, wherein the driver includes a plurality of drivers. 31. The device as recited in clause 1, wherein the second layer is below the first layer. 32. The device as recited in clause 1, wherein the plurality of first discrete output states and the plurality of second discrete output states are the same set of discrete output states. 33. The device as recited in clause 6, wherein the first charged particle beam manipulator has a first length to deflect the charged particle beam at the first angle, and the second charged particle beam manipulator has a second length to deflect the charged particle beam at the second angle.34. The device as in clause 6, wherein a first output is applied to the first charged particle beam manipulator to deflect the charged particle beam at the first angle, and a second output is applied to the second charged particle beam manipulator to deflect the charged particle beam at the second angle. 35. The device as in clause 7, wherein the first driver system includes a first set of switches configured to provide one of the plurality of first discrete output states, and the second driver system includes a second set of switches configured to provide one of the plurality of second discrete output states. 36. The device as in clause 8, wherein the first driver system includes a first set of power supplies configured to provide one of the plurality of first discrete output states, and the second driver system includes a second set of power supplies configured to provide one of the plurality of second discrete output states. 37. A charged particle beam device, comprising: a first charged particle beam deflector configured to affect a primary charged particle beam generated by a charged particle source along a main optical axis; a second charged particle beam deflector positioned downstream of the first charged particle beam deflector and configured to affect the primary charged particle beam, wherein the first charged particle beam deflector and the second charged particle beam deflector each include a plurality of segments; and a controller having circuitry configured to individually control the operation of each of the plurality of segments. 38. The device as in clause 37, wherein a segment of the plurality of segments of the first charged particle beam deflector and the second charged particle beam deflector includes a multipole structure configured to deflect the primary charged particle beam, and wherein the multipole structure includes a dipole, a quadrupole, or an octupole structure. 39. The device as in clause 38, wherein the segment includes a plurality of electrodes radially disposed relative to the main optical axis. 40. The device as in any one of clauses 37 to 39, wherein the plurality of segments of the first charged particle beam deflector and the second charged particle beam deflector are coaxially positioned along the main optical axis. 41. The device as in any one of clauses 37 to 40, wherein the first charged particle beam deflector and the second charged particle beam deflector are substantially positioned within a cavity of an objective lens and along the main optical axis. 42. The device as in any one of clauses 37 to 41, wherein the controller includes circuitry further configured to: generate a first electrical signal configured to control an output stage associated with one of the plurality of segments; and generate a second electrical signal configured to be applied to the segment to cause a deflection of the primary charged particle beam. 43. The device as in clause 42, wherein the controller includes circuitry further configured to: adjust the second electrical signal based on a desired deflection degree of the primary charged particle beam.44. The device as in clause 43, wherein the controller includes circuitry further configured to perform the following operations: applying the first electrical signal to the output stage associated with the segment among the plurality of segments; and applying the adjusted second electrical signal to the segment based on the first electrical signal, wherein the first electrical signal includes an activation signal or a deactivation signal configured to respectively activate or deactivate the output stage. 45. The device as in clause 44, wherein the output stage activated in response to the activation signal is configured to activate the corresponding segment, and the activation of the corresponding segment includes applying the adjusted second electrical signal to deflect the primary charged particle beam. 46. The device as in clause 44, wherein the output stage deactivated in response to the deactivation signal is configured to deactivate the corresponding segment such that the primary charged particle beam passes through substantially undeflected. 47. The device as in any one of clauses 42 to 46, wherein the controller includes circuitry further configured to generate the first electrical signal based on a landing energy of the primary charged particle beam. 48. The device as in any one of clauses 42 to 47, wherein the controller includes circuitry further configured to generate the first electrical signal based on a desired deflection sensitivity of one of the first charged particle beam deflector and the second charged particle beam deflector. 49. The device as in any one of clauses 42 to 48, wherein the controller includes circuitry further configured to modify a characteristic of the second electrical signal, and the modification of the characteristic of the second electrical signal includes a digital / analog signal conversion. 50. The device as in any one of clauses 37 to 49, wherein the primary charged particle beam includes an electron beam. 51. The device as in any one of clauses 37 to 50, wherein the first charged particle beam deflector and the second charged particle beam deflector include an electrostatic deflector. 52. The device as in clause 47, wherein a position of a plane of a sample can be adjusted along the principal optical axis based on the landing energy of the primary charged particle beam and a desired field of view to adjust a working distance between the sample and a pole piece. 53. A charged particle beam device, comprising: a first charged particle beam deflector configured to affect a primary charged particle beam generated by a charged particle source along a principal optical axis; a second charged particle beam deflector positioned downstream of the first charged particle beam deflector and configured to affect the primary charged particle beam, wherein each of the first charged particle beam deflector and the second charged particle beam deflector includes: an electrostatic deflector electrically connected to a first driver system configured to enable the electrostatic deflector to deflect the primary charged particle beam; and a magnetic deflector electrically connected to a second driver system configured to enable the magnetic deflector to deflect the primary charged particle beam. 54. The device as in clause 53, wherein the magnetic deflector is positioned in the first charged particle beam deflector and the second charged particle beam deflector downstream of the electrostatic deflector along the principal optical axis.55. The device according to any one of clauses 53 and 54, wherein the first drive system includes a first relay configured to perform one of the following operations: receive a first electrical signal from a signal source; and switch between a ground state and an active state of a first deflection drive unit based on the first electrical signal, wherein in the active state, the first deflection drive unit is configured to activate the electrostatic deflector to deflect the primary charged particle beam based on a second electrical signal, and wherein in the ground state, the first deflection drive unit is configured to deactivate the electrostatic deflector. 56. The device according to clause 55, wherein the second drive system includes a second relay configured to perform one of the following operations: receive a third electrical signal from the signal source; and switch between a ground state and an active state of a second deflection drive unit based on the third electrical signal, wherein in the active state, the second deflection drive unit is configured to activate the magnetic deflector to deflect the primary charged particle beam based on a fourth electrical signal, and wherein in the ground state, the second deflection drive unit is configured to deactivate the magnetic deflector. 57. The device according to any one of clauses 53 to 56, wherein the first and second deflection drive units are configured to activate the electrostatic deflector or the magnetic deflector respectively based on a landing energy of the primary charged particle beam. 58. The device according to clause 53, wherein the electrostatic deflector and the magnetic deflector are positioned substantially coplanar with respect to the main optical axis. 59. The device according to clause 53, wherein the electrostatic deflector of the first charged particle beam deflector is positioned downstream of the magnetic deflector of the first charged particle beam deflector, and wherein the electrostatic deflector of the second charged particle beam deflector is positioned upstream of the magnetic deflector of the second charged particle beam deflector. 60. The device according to any one of clauses 57 to 59, wherein a position of a plane of a sample can be adjusted based on the landing energy of the primary charged particle beam and a desired field of view along the main optical axis to adjust a working distance between the sample and a pole piece. 61. A method for deflecting a primary charged particle beam through a deflection scanning unit of a charged particle beam device, the method comprising: deflecting the primary charged particle beam generated by a charged particle source along a main optical axis using a first charged particle beam deflector; deflecting the primary charged particle beam using a second charged particle beam deflector positioned downstream of the first charged particle beam deflector, wherein the first charged particle beam deflector and the second charged particle beam deflector each include a plurality of segments; and individually controlling the operation of each of the plurality of segments using a controller having a circuitry. 62. The method according to clause 61, further comprising using the controller to generate: a first electrical signal configured to control an output stage associated with one of the plurality of segments; and a second electrical signal configured to enable the segment to deflect the primary charged particle beam.63. The method of clause 62 further includes using the controller to adjust the second signal based on a desired deflection degree of the primary charged particle beam. 64. The method of clause 63 further includes using the controller to apply: the first signal to the output stage associated with the segment among the plurality of segments; and applying the adjusted second signal to the segment based on the first signal, wherein the first signal includes an activation signal or a deactivation signal configured to respectively activate or deactivate the output stage. 65. The method of clause 64 further includes enabling the output stage in response to the activation signal to activate the corresponding segment to deflect the primary charged particle beam. 66. The method of clause 64 further includes deactivating the output stage in response to the deactivation signal to deactivate the corresponding segment such that the primary charged particle beam passes through without deflection. 67. The method of any one of clauses 62 to 66 further includes using the controller to generate the first signal based on a landing energy of the primary charged particle beam. 68. The method of clause 67 further includes adjusting a position of a plane of a sample along the main optical axis based on the landing energy of the primary charged particle beam to adjust a working distance between the sample and a pole piece. 69. The method of any one of clauses 62 to 68 further includes using the controller to generate the first signal based on a desired deflection sensitivity of the first charged particle beam deflector and the second charged particle beam deflector. 70. A method for deflecting a primary charged particle beam passing through a deflection scanning unit of a charged particle beam device, the method includes: deflecting the primary charged particle beam generated by a charged particle source along a main optical axis using a first charged particle beam deflector; deflecting the primary charged particle beam using a second charged particle beam deflector positioned downstream of the first charged particle beam deflector, wherein the first charged particle beam deflector and the second charged particle beam deflector each include: an electrostatic deflector electrically connected to a first driver system configured to enable the electrostatic deflector to affect the primary charged particle beam; and a magnetic deflector electrically connected to a second driver system configured to enable the magnetic deflector to affect the primary charged particle beam. 71. The method of clause 70 further includes: generating a first signal and a second signal from a signal source; receiving the first signal by a first relay; and switching between a base state and an active state of a first deflection drive unit based on the first signal, wherein in the active state, the first deflection drive unit is configured to activate the electrostatic deflector based on the second signal to deflect the primary charged particle beam, and wherein in the base state, the first deflection drive unit is configured to deactivate the electrostatic deflector.72. The method of item 71 further includes: generating a third electrical signal and a fourth electrical signal from the signal source; receiving the third electrical signal by a second relay; and switching between a ground state and an active state of a second deflection drive unit based on the third electrical signal, wherein in the active state, the second deflection drive unit is configured to activate the magnetic deflector to deflect the primary charged particle beam based on the fourth electrical signal, and wherein in the ground state, the second deflection drive unit is configured to deactivate the magnetic deflector. 73. The method of any one of items 70 to 72 further includes activating the electrostatic deflector or the magnetic deflector of the first charged particle beam deflector and the second charged particle beam deflector based on a landing energy of the primary charged particle beam. 74. The method of item 73 further includes adjusting a position of a plane of a sample along the main optical axis based on the landing energy of the primary charged particle beam to adjust a working distance between the sample and a pole piece. 75. A non-transitory computer-readable medium storing an instruction set, the instruction set executable by one or more processors of a charged particle beam device to cause the charged particle beam device to perform a method of deflecting a primary charged particle beam passing through a deflection scanning unit of the charged particle beam device, the method including: deflecting the primary charged particle beam generated by a charged particle source along a main optical axis using a first charged particle beam deflector; deflecting the primary charged particle beam using a second charged particle beam deflector positioned downstream of the first charged particle beam deflector, wherein the first charged particle beam deflector and the second charged particle beam deflector each include a plurality of segments; and individually controlling the operation of each of the plurality of segments configured to deflect the primary charged particle beam. 76. A non-transitory computer-readable medium storing an instruction set, the instruction set executable by one or more processors of a charged particle beam device to cause the charged particle beam device to perform a method of deflecting a primary charged particle beam passing through a deflection scanning unit of the charged particle beam device, the method including: deflecting the primary charged particle beam generated by a charged particle source along a main optical axis using a first charged particle beam deflector; deflecting the primary charged particle beam using a second charged particle beam deflector positioned downstream of the first charged particle beam deflector, wherein the first charged particle beam deflector and the second charged particle beam deflector each include: an electrostatic deflector electrically connected to a first drive system configured to enable the electrostatic deflector to affect the primary charged particle beam; and a magnetic deflector electrically connected to a second drive system configured to enable the magnetic deflector to affect the primary charged particle beam. As used herein, unless otherwise specifically stated, the term "or" encompasses all possible combinations, unless infeasible. For example, if it is stated that a component may include A or B, then the component may include A, or B, or A and B, unless otherwise specifically stated or infeasible. As a second example, if it is stated that a component may include A, B, or C, then the component may include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C, unless otherwise specifically stated or infeasible. Although embodiments of the present invention have been described in connection with various embodiments, it should be understood that various modifications and changes can be made without departing from the scope of the present invention. It is intended that the specification and examples be considered only illustrative. 1: Charged Particle Beam Detection System 10: Main Chamber 20: Loading / Locking Chamber 30: Equipment Front End Module (EFEM) 30a: First Loading Port 30b: Second Loading Port 50: Controller 100: Electron Beam Tool 100_1: Main Optical Axis 101: Electron Source 102: Primary Electron Beam 102_1: Electron Beam 102_2: Electron Beam 102_3: Electron Beam 102_1S: Detection Spot 102_2S: Detection Spot 102_3S: Detection Spot 102_1se: Secondary Electron Beam 102_2se: Secondary Electron Beam 102_3se: Secondary Electron Beam 110: Condensing Lens 171: Gun Aperture Plate 120: Source Conversion Unit 130: Primary Projection Optical System / Primary Projection System 131: Objective Lens 132: Deflection Scanning Unit 140M: Electron Detection Device 140_1: Detection Element 140_2: Detection Element 140_3: Detection Element 150: Secondary Optical System 150_1: Sub-Optical Axis 160: Beam Splitter 190: Sample 304: Main Optical Axis 308: Sample 309-1: Deflector 309-2: Deflector 310: Magnetic Objective Lens Assembly 320: Charged Particle Beam 335: Electrode 345: Electrode 350: Axis 400: Deflection Structure 401y: First Drive System 401yA: Driver / Drive System 401yB: Driver / Drive System 401yC: Driver / Drive System 401yD: Driver / Drive System 402x: Second Drive System 402xA: Driver / Drive System 402xB: Driver / Drive System 402xC: Driver / Drive System 402xD: Driver / Drive System 410: Multipole Structure 410A: Multipole Structure 410B: Multipole Structure 410C: Multipole Structure 410D: Multipole Structure 411A: Electrode 411B: Electrode 412A: Electrode 412B: Electrode 440: Multi-Output Driver 441: First Output 442: Second Output 443: Third Output 450: Switching Unit 450A: Deflection Structure 450B: Deflection Structure 450C: Deflection Structure 450D: Deflection Structure 451: First Switch 452: Second Switch 453: Third Switch 461: First Driver 462: Second Driver 463: Third Driver 501yA: Driver / Drive System 501yB: Driver / Drive System 501yC: Driver / Drive System 501yD: Driver / Drive System 502xA: Driver / Drive System 502xB: Driver / Drive System 502xC: Driver / Drive System 502xD: Driver / Drive System 510A: Multipole Structure 510B: Multipole Structure 510C: Multipole Structure 510D: Multipole Structure550: Deflection system 550A: Deflection structure 550B: Deflection structure 550C: Deflection structure 550D: Deflection structure 600: Deflection structure 601y: First drive system 602x: Second drive system 610: Multipole structure 611A: Electrode 611B: Electrode 612A: Electrode 612B: Electrode 610A: Multipole structure 610B: Multipole structure 610C: Multipole structure 610D: Multipole structure 700: Deflection structure / Charged particle beam device / Device 700B1: Primary electron beam 700B2: Secondary electron beam 700-1: Main optical axis 701: Cathode 702: Extractor electrode 703: Anode 704: Condenser lens 705: Beam limiting aperture array 706: Signal electron detector 707: Objective lens 707A: Virtual plane 707B: Virtual plane 709-1: Primary electron beam deflector 709-1A: Section 709-1B: Section 709-1C: Section 709-1e: Electrode 709-2: Primary electron beam deflector 709-2A: Section 709-2B: Section 709-2C: Section 709-8e: Electrode 711A: Electrode 711B: Electrode 712A: Electrode 712B: Electrode 714: Control electrode 715: Sample 720: Deflection control unit 725-1: Drive system 725-2: Drive system 730: Scan control unit 732-1: Digital deflection signal 734-1: Digital / analog converter 734-2: Digital / analog converter 740-1: Variable gain amplifier 740-2: Variable gain amplifier 751-1: Distributed output stage 751-1a: Control signal 751-2a: Control signal 752-1: Distributed output stage 752-1a: Control signal 752-2 Distributed output stage 752-2a: Control signal 753-1: Distributed output stage 753-1a: Control signal 753-2 Distributed output stage 753-2a: Control signal 762-1: Deflection field distribution pattern 762-2: Deflection field distribution pattern 764-1: Deflection field distribution pattern 764-2: Deflection field distribution pattern 766-1: Deflection field distribution pattern 766-2: Deflection field distribution pattern 768-1: Deflection field distribution pattern 768-2: Deflection field distribution pattern 800: Method 809-1: Primary electron beam deflector 809-1E: Electrostatic deflector 809-1M: Magnetic deflector 809-2: Primary electron beam deflector 809-2E: Electrostatic deflector 809-2M: Magnetic deflector 810: Step / Hybrid deflector 820: Step / Deflection control unit 821: Deflection control unit 822: Deflection control unit 825-1: Drive system 825-2: Drive system 830: Step / Scan control unit840: Step 841-1E: Repeater 842-1M: Repeater 841-2E: Repeater 842-2M: Repeater 843-1: Control Signal 843-2: Control Signal 844-1: Control Signal 844-2: Control Signal 845-1E: Drive Control Unit 845-1M: Drive Control Unit 845-2E: Drive Control Unit 845-2M: Drive Control Unit 850: Step 860: Electrostatic Electrode 870: Coil 900: Charged Particle Beam Device 900-1: Main Optical Axis 900B1: Low Landing Energy Primary Electron Beam 900B1 900B3: High Landing Energy Primary Electron Beam 909-1: Primary Electron Beam Deflector 909-2: Primary Electron Beam Deflector 907: Objective Lens / Objective Lens Assembly 914: Control Electrode 915: Sample 915P: Plane 1000: Method 1010: Step 1020: Step 1030: Step 1100: Method 1110: Step 1120: Step 1130: Step d1: Effective Deflection Length d2: Effective Deflection Length e1: Electrode e2: Electrode e3: Electrode e4: Electrode WD1: First Working Distance WD2: Second Working Distance FOV: Field of View FIG. 1 is a diagram illustrating an exemplary charged particle beam detection system in accordance with an embodiment of the present invention. FIG. 2 is a diagram illustrating an exemplary multi-beam device that is a part of the exemplary electron beam detection system of FIG. 1 in accordance with an embodiment of the present invention. FIG. 3A is a diagram illustrating the configuration of a scanning deflection system in accordance with an embodiment of the present invention. FIG. 3B is a graphical representation of the deflection of a charged particle beam in accordance with an embodiment of the present invention. FIG. 3C is a diagram illustrating the configuration of an exemplary deflection element in accordance with an embodiment of the present invention. FIG. 4A is a diagram of a plan view of an illustrative embodiment of a deflection system that can be implemented in a deflection scanning unit of a single-beam or multi-beam detection system in accordance with an embodiment of the present invention. FIG. 4B is a diagram of a cross-sectional view of an illustrative embodiment of a deflection system having multiple layers that can be implemented in a deflection scanning unit of a single-beam or multi-beam detection system in accordance with an embodiment of the present invention. FIG. 4C is a diagram of a cross-sectional view of another illustrative embodiment of a deflection system having multiple layers that can be implemented in a deflection scanning unit of a single-beam or multi-beam detection system. FIG. 4D is a diagram of a plan view of an embodiment of a deflection system having a manipulator with a smaller diameter compared to the deflection system of FIG. 4A in accordance with an embodiment of the present invention. FIG. 4E is a diagram showing a cross-sectional view of an illustrative embodiment of a deflection system in multiple layers that can be implemented in a deflection scanning unit in a single-beam or multi-beam detection system. FIG. 4F is a diagram showing a cross-sectional view of another illustrative embodiment of a deflection system in multiple layers that can be implemented in a deflection scanning unit in a single-beam or multi-beam detection system. FIG. 4G is a diagram showing a cross-sectional view of another illustrative embodiment of a deflection system in multiple layers that can be implemented in a deflection scanning unit in a single-beam or multi-beam detection system. FIG. 5A is a diagram showing a driver that conforms to an embodiment of the present invention. FIG. 5B is a diagram showing a plurality of drivers that conform to an embodiment of the present invention. FIG. 6 is a flowchart showing an exemplary method for controlling a driver associated with a deflection system that conforms to an embodiment of the present invention. FIG. 7A is a schematic diagram showing an exemplary configuration of a charged particle beam device including a plurality of charged particle beam deflectors that conform to an embodiment of the present invention. FIG. 7B is a schematic diagram showing an exemplary configuration of the segmented charged particle beam deflector of FIG. 7A that conforms to an embodiment of the present invention. FIG. 7C is a schematic diagram showing an exemplary configuration of a control circuit associated with a segmented charged particle beam deflector that conforms to an embodiment of the present invention. FIG. 7D is a schematic diagram showing an exemplary deflection field distribution of a charged particle beam deflector that conforms to an embodiment of the present invention. FIG. 7E is a schematic diagram showing another exemplary deflection field distribution of a charged particle beam deflector that conforms to an embodiment of the present invention. FIGS. 8A to 8C are schematic diagrams showing an exemplary configuration of a control circuit associated with a hybrid charged particle beam deflector that conforms to an embodiment of the present invention. FIG. 8D is a schematic illustration of an exemplary configuration of a hybrid beam deflector that conforms to an embodiment of the present invention. FIGS. 9A to 9B are schematic diagrams showing an exemplary configuration of a charged particle beam device including an adjustable sample stage that conforms to an embodiment of the present invention. FIG. 10 is a process flowchart showing an exemplary method for deflecting a charged particle beam passing through a deflection scanning unit of a charged particle beam device that conforms to an embodiment of the present invention. FIG. 11 is a process flowchart showing another exemplary method for deflecting a charged particle beam passing through a deflection scanning unit of a charged particle beam device that conforms to an embodiment of the present invention. 102: Primary electron beam 501yA: Driver / driver system 501yB: Driver / driver system 501yC: Drive / Drive System 501yD: Drive / Drive System 502xA: Drive / Drive System 502xB: Drive / Drive System 502xC: Drive / Drive System 502xD: Drive / Drive System 510A: Multi-Pole Structure 510B: Multi-Pole Structure 510C: Multi-Pole Structure 510D: Multi-Pole Structure 550: Deflection System 550A: Deflection Structure 550B: Deflection Structure 550C: Deflection Structure 550D: Deflection Structure

Claims

1. A deflector structure comprising: a plurality of electrode stages, each of the stages including a set of electrodes configured to surround a charged particle beam of a scanning charged particle microscope and to substantially transmit the charged particle beam through the center of the set of electrodes of each of the stages, wherein each electrode of the set of electrodes is configured to be driven by a driver providing one of a plurality of discrete output states.

2. The deflector structure of claim 1, wherein each of the levels forms a multi-pole structure configured to deflect the charged particle beam.

3. The deflector structure as claimed in claim 2, wherein the multi-pole structure comprises a dipole, a quadrupole, or an octupole structure.

4. The deflector structure of claim 1, wherein each of the levels comprises the same or different number of electrodes.

5. The deflector structure of claim 1, wherein the size or shape of the first stage of one of the levels is different from the size or shape of the second stage of one of the levels.

6. The deflector structure as described in Request 1, wherein each stage is set to a different ratio of the size of one of the smallest stages of that stage.

7. The deflector structure of claim 1, wherein each stage is sized to have a different length along one of the directions of the charged particle beam.

8. The deflector structure as claimed in claim 1, wherein the plurality of discrete output states includes a first voltage and a second voltage.

9. The deflector structure of claim 1, wherein the deflector structure is configured as a microelectromechanical system.

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