Imaging lens assembly and electronic device

Abstract

An imaging lens includes an optical element and an anti-reflective film. An imaging beam passes through the optical element, which has an injection mark. The anti-reflective film is disposed on at least a portion of the surface of the optical element and includes a nanostructure layer and an interlayer. The nanostructure layer has a plurality of non-directionally extending ridges, wherein a bottom of each ridge is closer to the optical element than a top, and each ridge tapers from bottom to top. The interlayer is disposed between the optical element and the nanostructure layer and includes at least two first dielectric layers and at least one second dielectric layer, wherein the refractive index of the second dielectric layer is different from that of each of the first dielectric layers, and the second dielectric layer is disposed between the first dielectric layers. This maintains low reflectivity.

Description

Imaging lenses and electronics The present disclosure relates to an imaging lens, and more particularly to an imaging lens for use in a portable electronic device. Portable electronic devices, such as smart devices and tablets, have rapidly developed in recent years and have become a fixture of modern life. Consequently, the development of imaging lenses for these devices has also flourished. However, with increasing technological advancements, users are demanding higher quality from imaging lenses. Therefore, developing an imaging lens that can enhance the tolerance of anti-reflection films to environmental fluctuations, thereby maintaining low-reflection performance, has become a critical and pressing issue for the industry. The present disclosure provides an imaging lens and an electronic device, which stabilize the structure of an anti-reflection film through an intermediate layer, thereby improving the tolerance of the anti-reflection film to environmental changes and maintaining the low reflection performance of the anti-reflection film. According to one embodiment of the present disclosure, an imaging lens is provided, comprising an optical element and an anti-reflection film. An imaging ray passes through the optical element, and the optical element has a fill mark. The anti-reflection film is disposed on at least a portion of the surface of the optical element and comprises a nanostructured layer and an intermediate layer. The nanostructured layer has a plurality of non-directionally extending ridges, wherein a bottom portion of each ridge is closer to the optical element than a top portion, and each ridge tapers from the bottom portion to the top portion. The intermediate layer is disposed between the optical element and the nanostructured layer and comprises at least two first dielectric layers and at least one second dielectric layer, wherein the refractive index of the second dielectric layer is different from that of each first dielectric layer, and the second dielectric layer is disposed between the first dielectric layers. The thickness of each first dielectric layer is LT1, and the thickness of the second dielectric layer is LT2, satisfying the following conditions: 42 nm < LT1 < 112 nm; and 1 nm < LT2 < 35 nm. According to the imaging lens of the embodiment described in the preceding paragraph, the thickness of each first dielectric layer is LT1, which satisfies the following condition: 45 nm < LT1 < 90 nm. According to the imaging lens of the embodiment described in the preceding paragraph, the thickness of the second dielectric layer is LT2, which satisfies the following condition: 3 nm < LT2 < 27 nm. In the imaging lens according to the embodiment described in the preceding paragraph, the intermediary layer may further include at least one third dielectric layer. The refractive index of the third dielectric layer may be different from that of the second dielectric layer, and the third dielectric layer is disposed adjacent to the second dielectric layer. The thickness of the third dielectric layer is LT3, which may satisfy the following condition: 3 nm < LT3 < 38 nm. According to the imaging lens of the embodiment described in the previous paragraph, the thickness of each first dielectric layer is LT1, and the thickness of the third dielectric layer is LT3, which can satisfy the following condition: 2.3 < LT1 / LT3 < 9.6. According to the imaging lens of the embodiment described in the previous paragraph, the refractive index of the second dielectric layer may be higher than the refractive index of each of the first dielectric layers and the refractive index of the third dielectric layer. In the imaging lens according to the embodiment described in the preceding paragraph, a portion of a top portion of the intermediate layer may be in contact with air. In the imaging lens according to the embodiment described in the preceding paragraph, the average height of the ridge protrusions may be greater than 78 nm and less than 308 nm. In the imaging lens according to the embodiment described in the preceding paragraph, the main component of the nanostructure layer may be aluminum oxide. According to the imaging lens of the embodiment described in the previous paragraph, the main component of each first dielectric layer may be silicon oxide. According to the imaging lens of the embodiment described in the previous paragraph, the main component of the second dielectric layer may be titanium oxide. According to the imaging lens of the embodiment described in the previous paragraph, the main component of the third dielectric layer may be silicon oxide. In the imaging lens according to the embodiment described in the preceding paragraph, the average reflectivity of at least a portion of the surface of the optical element having the nanostructure layer disposed thereon for light wavelengths between 420 nm and 760 nm, R4276, may satisfy the following conditions: 0% < R4276 < 0.2%. Furthermore, the following conditions may also be satisfied: 0% < R4276 < 0.1%. According to the imaging lens of the embodiment described in the previous paragraph, the optical element may include a matte structure. The matte structure forms a concave-convex pattern on a surface of the optical element, and the matte structure and the optical element are integrally formed. According to the imaging lens of the embodiment described in the previous paragraph, the matte structure may have a plurality of protrusions, and the protrusions are arranged in a regular pattern. According to the imaging lens of the embodiment described in the preceding paragraph, the height of each protrusion may be greater than 40 μm and less than 1000 μm. Alternatively, the height of each protrusion may be greater than 50 μm and less than 500 μm. The imaging lens according to the embodiment described in the preceding paragraph may further include an adhesive element, wherein the adhesive element is used to fix the optical element. According to one embodiment of the present disclosure, an electronic device is provided, comprising the imaging lens according to the aforementioned embodiment. The present disclosure provides an imaging lens comprising an optical element and an anti-reflection film. An imaging ray passes through the optical element, and the optical element has a casting mark. The anti-reflection film is disposed on at least a portion of the surface of the optical element and comprises a nanostructured layer and an intermediate layer. The nanostructured layer comprises a plurality of non-directionally extending ridges, wherein a bottom portion of each ridge is closer to the optical element than a top portion, and each ridge tapers from the bottom portion to the top portion. The intermediate layer is disposed between the optical element and the nanostructured layer and comprises at least two first dielectric layers and at least one second dielectric layer, wherein the refractive index of the second dielectric layer is different from that of each first dielectric layer, and the second dielectric layer is disposed between the first dielectric layers. The thickness of each first dielectric layer is LT1, and the thickness of the second dielectric layer is LT2, which satisfy the following conditions: 42 nm < LT1 < 112 nm; and 1 nm < LT2 < 35 nm. The above configuration of the intermediate layer helps to improve the structural stability of the anti-reflection film, thereby improving the anti-reflection film's tolerance to environmental changes to maintain the anti-reflection film's low reflective performance. The ridge-like protrusions help form a gradient refractive index to reduce reflectivity, where the environmental changes can be temperature, humidity, or other chemical interferences, but are not limited to these. Furthermore, the optical element may be a lens element or a prism element, but is not limited thereto. Furthermore, a gate trace may be a visible trace of the optical element's material after being heated and melted, or a trace of the material's fluidity after being heated and melted, resulting in a specific geometric appearance within a specific geometric space, such as the cutout mark of an injection molding runner. A gate trace may also be referred to as a runner trace, but is not limited to these and is not limited to conventional technical definitions. A portion of a top portion of the intermediary layer can be in contact with air, thereby facilitating adjustment of the degree of change in the graded refractive index of the nanostructure layer. The interposer layer may further include at least one third dielectric layer, wherein the refractive index of the third dielectric layer is different from that of the second dielectric layer, and the third dielectric layer is disposed adjacent to the second dielectric layer. The thickness of the third dielectric layer is LT3, which satisfies the following condition: 3 nm < LT3 < 38 nm. This allows the third dielectric layer to form thin-film interference with the second dielectric layer, thereby reducing reflectivity. The refractive index of the second dielectric layer may be higher than the refractive index of each of the first dielectric layers and the refractive index of the third dielectric layer. The main component of the nanostructure layer may be aluminum oxide. The main component of each first dielectric layer may be silicon oxide, thereby helping to improve film stability. The second dielectric layer may be mainly composed of titanium oxide. Thus, the second dielectric layer can cooperate with the first dielectric layer or the third dielectric layer to generate thin film interference, thereby reducing reflectivity. The main component of the third dielectric layer may be silicon oxide. Furthermore, the first dielectric layer, the second dielectric layer and the third dielectric layer of the interposer can be made of SiO 2. MgF 2. TiO 2. Ta 2O 5. Cr 2O 3. HfO 2. ZnO, AlN, Al 2O 3. Y 2O 3. CaF 2. SiC, MgO, ZrO 2 are stacked together. The element ratios of the above compounds are not limited to the disclosed values ​​and may vary due to differences in process conditions. The optical element may include a matte structure, where the matte structure creates a convex-concave pattern on one surface of the optical element, and the matte structure is integrally molded with the optical element. This convex-concave pattern helps reduce stray light reflections. Specifically, the matte structure can be formed in the optical element through mold design, and the matte structure can be located outside the optically active area. The matte structure may have a plurality of protrusions arranged in a regular pattern, thereby facilitating the quality control of the matte structure. The imaging lens may further include an adhesive element for securing the optical element. This helps increase assembly stability. Specifically, the adhesive element may be mixed with a dark pigment to reduce reflectivity. The thickness of each first dielectric layer is LT1, which can satisfy the following condition: 45 nm < LT1 < 90 nm. This helps to improve the environmental tolerance of the anti-reflection film. The thickness of the second dielectric layer is LT2, which satisfies the following condition: 3 nm < LT2 < 27 nm. The thickness of each first dielectric layer is LT1, and the thickness of the third dielectric layer is LT3, which can satisfy the following condition: 2.3 < LT1 / LT3 < 9.6. This helps to improve the environmental tolerance and anti-reflection performance of the anti-reflection film. The average height of the ridges can be greater than 78 nm and less than 308 nm. Specifically, the heights of the ridges may vary, and the average height can be calculated from at least three or more ridges, with preference given to ridges with recognizable outlines. Furthermore, the ridge height can be the vertical height from the absolute base (foot of the ridge) to the top (top of the ridge) of the ridge when observed in cross-section (destructive measurement). At least a portion of the surface of the optical element with the nanostructured layer has an average reflectivity of R4276 for light wavelengths between 420 nm and 760 nm, satisfying the following conditions: 0% < R4276 < 0.2%. This helps improve transmittance while reducing stray light reflections. Furthermore, the following conditions are met: 0% < R4276 < 0.1%. The height of each protrusion can be greater than 40 μm and less than 1000 μm. This helps prevent stray light from being reflected onto the imaging surface. Alternatively, the height of each protrusion can be greater than 50 μm and less than 500 μm. The various technical features of the imaging lens disclosed above can be combined and configured to achieve corresponding effects. The present disclosure provides an electronic device including the aforementioned imaging lens. According to the above-mentioned embodiments, specific embodiments are presented below and described in detail with reference to the drawings. <First embodiment> Please refer to FIG1A , which illustrates a schematic diagram of an imaging lens 100 according to a first embodiment of the present disclosure. As shown in FIG1A , the imaging lens 100 includes an optical element 110 , wherein an imaging light L passes through the optical element 110 . The optical element 110 is a prism element, but the present invention is not limited thereto. Specifically, the imaging lens 100 of the first embodiment is a telephoto imaging lens, and the imaging lens 100 may further include a lens element 141, a lens barrel 142, an assembly element 143, and an electronic photosensitive element 144. The lens barrel 142 is used to accommodate the optical element 110 and the lens element 141. The assembly element 143 is used to fix the optical element 110. The electronic photosensitive element 144 is disposed on an imaging surface IMG of the imaging lens 100 and is used to receive imaging light L. Please refer to Figures 1B to 1G, wherein Figure 1B is a three-dimensional view of the optical element 110 and the anti-reflection film 120 in the first embodiment according to Figure 1A, Figure 1C is a cross-sectional view of the optical element 110 and the anti-reflection film 120 in the first embodiment according to Figure 1A, Figure 1D is a top view of the optical element 110 and the anti-reflection film 120 in the first embodiment according to Figure 1A, Figure 1E is a schematic diagram of the optical element 110 and the anti-reflection film 120 in the first embodiment according to Figure 1A, Figure 1F is a scanning electron microscope image of the anti-reflection film 120 in the first embodiment according to Figure 1A, and Figure 1G is a cross-sectional view of the optical element 110 and the anti-reflection film 120 in the first embodiment according to Figure 1A. As shown in Figures 1B through 1G , imaging lens 100 further includes an anti-reflection film 120 disposed on at least a portion of the surface of optical element 110. Anti-reflection film 120 includes a nanostructure layer 121 and an intermediate layer 122. Optical element 110 also has a filler mark 111. It should be noted that the dashed line in Figure 1E indicates the extent of anti-reflection film 120. Specifically, the nanostructure layer 121 includes a plurality of non-directionally extending ridges 121a, wherein a bottom portion of each ridge 121a is closer to the optical element 110 than a top portion thereof, and each ridge 121a tapers from the bottom portion to the top portion. The intermediary layer 122 is disposed between the optical element 110 and the nanostructure layer 121 and includes at least two first dielectric layers and at least one second dielectric layer. The refractive index of the second dielectric layer is different from that of each first dielectric layer, and the second dielectric layer is disposed between the first dielectric layers. The above configuration of the intermediate layer 122 helps to improve the structural stability of the anti-reflection film 120, thereby improving the tolerance of the anti-reflection film 120 to environmental changes to maintain the low reflective performance of the anti-reflection film 120. The ridge-shaped protrusions 121a help form a gradient refractive index to reduce reflectivity, wherein the environmental changes can be temperature, humidity or other chemical interferences, but are not limited to these. Specifically, the injection mark 111 can be seen as a trace of the material of the optical element 110 after being heated and melted, or as a trace of the material having fluidity after being heated and melted, forming a specific geometric appearance in a specific geometric space, such as a cut mark of an injection molding runner. The injection mark 111 can also be called a run mark, but is not limited to this and is not limited to the definition of customary terms in conventional technology. As shown in FIG. 1C , the optical element 110 having the injection mark 111 can be designed with a more complex shape through the mold. For example, the aperture of the optical element can be partially reduced to reduce the chance of stray light passing through. The main component of the nanostructure layer 121 can be aluminum oxide, the main component of each first dielectric layer can be silicon oxide, and the main component of the second dielectric layer can be titanium oxide. This helps improve film stability, and the second dielectric layer can cooperate with the first dielectric layer to generate thin film interference to reduce reflectivity. As shown in Figure 1G, the vertical height of each ridge 121a is H. While the heights of each ridge 121a may vary, the average height of at least three or more ridges 121a is calculated, with preference given to ridges 121a with recognizable outlines. Furthermore, the height of a ridge 121a can be measured as the vertical height H from the absolute bottom (the foot of the ridge) to the top (the summit) of the ridge 121a, as observed in a cross-section (destructive measurement). In the first embodiment, the average height of the ridges 121a is 200 nm. As shown in Figures 1B through 1D, optical element 110 may include matte structures 112 and 113. These matte structures 112 and 113 each create a concave-convex pattern on a surface of optical element 110, and are integrally formed with optical element 110. The concave-convex surface helps reduce stray light reflections. Specifically, the matte structures 112 and 113 can be formed on optical element 110 through mold design, and can be located outside the optically active area. As can be seen from FIG. 1C , the matte structure 113 may have a plurality of protrusions arranged regularly, wherein each protrusion is an arc protrusion and has a height of 150 μm. As shown in FIG. 1D , the matte structure 112 may include a plurality of protrusions 112a arranged in a regular pattern. Each protrusion 112a is triangular, and each protrusion 112a has a height h of 100 μm. This facilitates quality control of the matte structures 112 and 113 by observing the protrusions 112a of the matte structure 112 and the protrusions of the matte structure 113. As shown in FIG. 1G , a portion of a top portion of the intermediate layer 122 is in contact with air, thereby helping to adjust the degree of change in the graded refractive index of the nanostructure layer 121 . Interposer layer 122 may further include at least one third dielectric layer, wherein the primary component of the third dielectric layer may be silicon oxide. The refractive index of the third dielectric layer is different from that of the second dielectric layer. The third dielectric layer and the second dielectric layer are disposed adjacent to each other, and the refractive index of the second dielectric layer may be higher than the refractive indices of the first dielectric layer and the third dielectric layer. Thus, the third dielectric layer and the second dielectric layer may form thin-film interference, thereby helping to reduce reflectivity. Furthermore, the first dielectric layer, the second dielectric layer, and the third dielectric layer of the interposer 122 may be made of SiO 2. MgF 2. TiO 2. Ta 2O 5. Cr 2O 3. HfO 2. ZnO, AlN, Al 2O 3. Y 2O 3. CaF 2. SiC, MgO, ZrO 2 are stacked together. The element ratios of the above compounds are not limited to the disclosed values ​​and may vary due to differences in process conditions. Please refer to Table 1, which lists the composition of the intermediary layer 122 of the first embodiment and the corresponding location of the nanostructure layer 121 and the optical element 110. The intermediary layer 122 in Table 1 can correspond to the location relationship among the intermediary layer 122, the nanostructure layer 121, and the optical element 110 in FIG. 1G. Table 1 further lists the composition and thickness of the first dielectric layer, the second dielectric layer, and the third dielectric layer. Please refer to FIG. 1H , which illustrates the reflectivity of imaging lens 100 according to the first embodiment of FIG. FIG. 1H shows that at least the portion of the surface of optical element 110 provided with nanostructure layer 121 has an average reflectivity of R4276 for light with wavelengths between 420 nm and 760 nm. The average reflectivity R4276 in the first embodiment is 0.049%. <Second embodiment> Please refer to FIG. 2A , which illustrates a schematic diagram of an imaging lens 200 according to a second embodiment of the present disclosure. As shown in FIG. 2A , the imaging lens 200 includes an optical element 210 , wherein an imaging light L passes through the optical element 210 . The optical element 210 is a prism element, but the present invention is not limited thereto. Furthermore, the imaging lens 200 of the second embodiment is a telephoto imaging lens, and the imaging lens 200 may further include a lens element 241, a lens barrel 242, an assembly element 243, and an electronic photosensitive element 244, wherein the lens barrel 242 is used to accommodate the optical element 210 and the lens element 241, the assembly element 243 is used to fix the optical element 210, and the electronic photosensitive element 244 is disposed on an imaging surface IMG of the imaging lens 200, and the electronic photosensitive element 244 is used to receive imaging light L. Please refer to Figures 2B and 2C. Figure 2B illustrates a perspective view of the optical element 210 and anti-reflection film 220 according to the second embodiment of Figure 2A, while Figure 2C illustrates a schematic view of the optical element 210 and anti-reflection film 220 according to the second embodiment of Figure 2A. As shown in Figures 2B and 2C, the imaging lens 200 further includes an anti-reflection film 220 disposed on at least a portion of the surface of the optical element 210. The anti-reflection film 220 comprises a nanostructure layer and an intermediary layer, and the optical element 210 has a filler mark 211. It should be noted that the dashed line in Figure 2C indicates the extent of the anti-reflection film 220. Specifically, the nanostructure layer comprises a plurality of non-directionally extending ridges, wherein a base of each ridge is closer to the optical element 210 than a top, and each ridge tapers from the base to the top. The interlayer is disposed between the optical element 210 and the nanostructure layer and comprises at least two first dielectric layers and at least one second dielectric layer. The refractive index of the second dielectric layer is different from that of each of the first dielectric layers, and the second dielectric layer is disposed between the first dielectric layers. As shown in FIG. 2B , the optical element 210 may include a matte structure 212 , wherein the matte structure 212 forms a concave-convex pattern on a surface of the optical element 210 , and the matte structure 212 and the optical element 210 are integrally formed. In detail, the matte structure 212 may have a plurality of protrusions, and the protrusions are regularly arranged, wherein each protrusion is an arc protrusion, the protrusion extends along an S-shaped path, and the height of each protrusion is 300 μm. Please refer to Table 2, which lists the composition of the interposer layer of the second embodiment and the corresponding placement positions of the nanostructure layer and the optical element 210. Table 2 further lists the thicknesses of the first dielectric layer and the second dielectric layer. <Third embodiment> Please refer to FIG3A, which illustrates a schematic diagram of an imaging lens 300 according to a third embodiment of the present disclosure. As shown in FIG3A, the imaging lens 300 includes an optical element 310, wherein an imaging light L passes through the optical element 310. The optical element 310 is a lens element, but the present invention is not limited thereto. Furthermore, the imaging lens 300 of the third embodiment is a telephoto imaging lens, and the imaging lens 300 may further include a lens element 341, a lens barrel 342, and an electronic photosensitive element 344, wherein the lens barrel 342 is used to accommodate the optical element 310 and the lens element 341, and the electronic photosensitive element 344 is disposed on an imaging surface IMG of the imaging lens 300, and the electronic photosensitive element 344 is used to receive imaging light L. Please refer to Figures 3B to 3D. Figure 3B illustrates an object-side perspective view of the optical element 310 and anti-reflection film 320 according to the third embodiment of Figure 3A. Figure 3C illustrates an image-side perspective view of the optical element 310 and anti-reflection film 320 according to the third embodiment of Figure 3A. Figure 3D illustrates a schematic diagram of the optical element 310 and anti-reflection film 320 according to the third embodiment of Figure 3A. As can be seen from Figures 3B to 3D, the imaging lens 300 further includes an anti-reflection film 320 disposed on at least a portion of the surface of the optical element 310. The anti-reflection film 320 comprises a nanostructure layer and an interlayer, and the optical element 310 has a filler mark 311. It should be noted that the dashed line in Figure 3D indicates the extent of the anti-reflection film 320. The anti-reflection film 320 is disposed in the outer peripheral region of the object side and the central region of the image side of the optical element 310. The nanostructure layer has a plurality of non-directionally extending ridges, wherein a base of each ridge is closer to the optical element 310 than a top, and each ridge tapers from the base to the top. An intermediary layer is disposed between the optical element 310 and the nanostructure layer and includes at least two first dielectric layers and at least one second dielectric layer, wherein the refractive index of the second dielectric layer is different from that of each first dielectric layer, and the second dielectric layer is disposed between the first dielectric layers. Furthermore, the intermediary layer may further include at least one third dielectric layer, wherein the refractive index of the third dielectric layer is different from that of the second dielectric layer, the third dielectric layer is disposed adjacent to the second dielectric layer, and the refractive index of the second dielectric layer may be higher than the refractive index of each first dielectric layer and the refractive index of the third dielectric layer. As shown in FIG. 3A , the imaging lens 300 may further include an adhesive element 330 , wherein the adhesive element 330 is used to secure the optical element 310 . This helps to increase assembly stability. Specifically, the adhesive element 330 may be mixed with a dark pigment to reduce reflectivity. The optical element 310 may include matte structures 312 and 313 , wherein the matte structures 312 and 313 respectively form unevenness on a surface of the optical element 310 , and the matte structures 312 and 313 are integrally formed with the optical element 310 . As can be seen from FIG. 3B , the matte structure 312 may have a plurality of protrusions arranged regularly, wherein each protrusion is triangular in shape and has a height of 75 μm. As can be seen from FIG. 3C , the matte structure 313 may have a plurality of protrusions, and the protrusions are regularly arranged, wherein each protrusion is an arc protrusion, the protrusions are arranged in concentric circles, and the height of each protrusion is 50 μm. Please refer to Table 3, which lists the composition of the interposer layer of the third embodiment and the corresponding placement positions of the nanostructure layer and the optical element 310. Table 3 further lists the thicknesses of the first dielectric layer, the second dielectric layer, and the third dielectric layer. <Fourth embodiment> Please refer to FIG4A, which illustrates a schematic diagram of an imaging lens 400 according to a fourth embodiment of the present disclosure. As shown in FIG4A, the imaging lens 400 includes an optical element 410, wherein an imaging light L passes through the optical element 410. The optical element 410 is a lens element, but the present invention is not limited thereto. Furthermore, the imaging lens 400 of the fourth embodiment is an ultra-wide-angle imaging lens, and the imaging lens 400 may further include a lens element 441, a lens barrel 442, and an electronic photosensitive element 444, wherein the lens barrel 442 is used to accommodate the optical element 410 and the lens element 441, and the electronic photosensitive element 444 is disposed on an imaging surface IMG of the imaging lens 400, and the electronic photosensitive element 444 is used to receive imaging light L. Please refer to FIG. 4B , which illustrates a schematic diagram of an optical element 410 and an anti-reflection film 420 according to the fourth embodiment of FIG. As shown in FIG. 4B , imaging lens 400 further includes an anti-reflection film 420 disposed on at least a portion of the surface of optical element 410. Anti-reflection film 420 comprises a nanostructure layer and an intermediary layer, and optical element 410 has a filler mark 411. It should be noted that the dashed line in FIG. 4B indicates the extent of anti-reflection film 420. Specifically, the nanostructure layer comprises a plurality of non-directionally extending ridges, wherein a base of each ridge is closer to the optical element 410 than a top, and each ridge tapers from the base to the top. The interlayer is disposed between the optical element 410 and the nanostructure layer and comprises at least two first dielectric layers and at least one second dielectric layer. The refractive index of the second dielectric layer is different from that of each of the first dielectric layers, and the second dielectric layer is disposed between the first dielectric layers. As shown in FIG. 4A , the imaging lens 400 may further include an adhesive element 430 , wherein the adhesive element 430 is used to fix the optical element 410 . <Fifth embodiment> Please refer to FIG5A, which illustrates a schematic diagram of an imaging lens 500 according to a fifth embodiment of the present disclosure. As shown in FIG5A, the imaging lens 500 includes an optical element 510, wherein an imaging light L passes through the optical element 510. The optical element 510 is a lens element, but the present invention is not limited thereto. Furthermore, the imaging lens 500 of the fifth embodiment is a wide-angle imaging lens, and the imaging lens 500 may further include a lens element 541, a lens barrel 542, and an electronic photosensitive element 544, wherein the lens barrel 542 is used to accommodate the optical element 510 and the lens element 541, and the electronic photosensitive element 544 is disposed on an imaging surface IMG of the imaging lens 500, and the electronic photosensitive element 544 is used to receive imaging light L. Please refer to FIG. 5B , which illustrates a schematic diagram of an optical element 510 and an anti-reflection film 520 according to the fifth embodiment of FIG. As shown in FIG. 5B , imaging lens 500 further includes an anti-reflection film 520 disposed on at least a portion of the surface of optical element 510. The anti-reflection film 520 comprises a nanostructure layer and an intermediate layer, and optical element 510 has a injection mark 511. It should be noted that the dashed line in FIG. 5B indicates the extent of the anti-reflection film 520. Specifically, the nanostructure layer comprises a plurality of non-directionally extending ridges, wherein a base of each ridge is closer to the optical element 510 than a top, and each ridge tapers from the base to the top. The interlayer is disposed between the optical element 510 and the nanostructure layer and comprises at least two first dielectric layers and at least one second dielectric layer. The refractive index of the second dielectric layer is different from that of each of the first dielectric layers, and the second dielectric layer is disposed between the first dielectric layers. As shown in FIG. 5A , the imaging lens 500 may further include an adhesive element 530 , wherein the adhesive element 530 is used to fix the optical element 510 . <Sixth embodiment> Please refer to Figures 6A and 6B. Figure 6A illustrates a schematic diagram of an electronic device 60 according to a sixth embodiment of the present disclosure, while Figure 6B illustrates another schematic diagram of the electronic device 60 according to the sixth embodiment of Figure 6A. As can be seen from Figures 6A and 6B, electronic device 60 is a smartphone and includes an imaging lens. Specifically, the imaging lens comprises an ultra-wide-angle imaging lens 622, a high-pixel imaging lens 623, and a telephoto imaging lens 624, and the user interface 621 is a touch screen, although this is not a limitation. Specifically, the imaging lens may be any of the imaging lenses described in the first through fifth embodiments, but this disclosure is not limited thereto. The user interface 621 has a touch function, and the user can enter the shooting mode through the user interface 621. The user interface 621 is used to display the image and can be used to manually adjust the shooting angle to switch between different imaging lenses. In this case, the imaging lens focuses the imaging light on an electronic photosensitive element and outputs an electronic signal related to the image to the image signal processor (ISP) 625. As shown in FIG6B , depending on the camera specifications of electronic device 60 , electronic device 60 may further include an optical image stabilization component (not shown). Furthermore, electronic device 60 may further include at least one focus assist module (not shown) and at least one sensor element (not shown). The focus assist module may be a flash module that compensates for color temperature, an infrared rangefinder, a laser focus module, etc. The sensor element may be capable of sensing physical momentum and actuation energy, such as an accelerometer, a gyroscope, or a Hall Effect Element, to detect shaking and vibration imposed by the user's hand or the external environment. This, in turn, facilitates the autofocus function and optical image stabilization component of the imaging lens in electronic device 60, thereby achieving good image quality. This helps the electronic device 60 according to the present disclosure to have multiple shooting modes, such as optimized selfies, low-light HDR (High Dynamic Range) imaging, and high-resolution 4K video recording. In addition, the user can directly view the camera's shooting screen through the user interface 621 and manually control the framing range on the user interface 621 to achieve a what-you-see-is-what-you-get auto-focus function. Furthermore, the imaging lens, optical image stabilization assembly, sensor components, and focus assist module can be mounted on a flexible printed circuit board (FPC) (not shown) and electrically connected to the imaging signal processing unit 625 and other related components via a connector (not shown) to execute the capture process. Current electronic devices, such as smartphones, are trending towards being thinner and lighter. Placing the imaging lens and related components on a flexible printed circuit board and then integrating the circuitry onto the electronic device's mainboard via a connector can meet the requirements of mechanical design and circuit layout within the limited internal space of the electronic device, providing greater margins. This also allows for more flexible control of the imaging lens' autofocus function via the electronic device's touchscreen. In a sixth embodiment, the electronic device 60 may include multiple sensor components and multiple focus assist modules. The sensor components and focus assist modules are mounted on the flexible printed circuit board and at least one additional flexible printed circuit board (not shown). These components are electrically connected to the imaging signal processing unit 625 and other related components via corresponding connectors to execute the capture process. In other embodiments (not shown), the sensor element and the auxiliary optical element may also be disposed on a mainboard or other types of carrier boards of the electronic device according to the requirements of the mechanical design and circuit layout. In addition, the electronic device 60 may further include but is not limited to a display unit, a control unit, a storage unit, a temporary storage unit (RAM), a read-only storage unit (ROM), or a combination thereof. FIG6C is a schematic diagram illustrating an image captured by the electronic device 60 according to the sixth embodiment of FIG6A. As can be seen from FIG6C, the ultra-wide-angle imaging lens 622 can capture a wider range of images, thus accommodating more scenes. FIG6D is a schematic diagram illustrating another image captured by the electronic device 60 according to the sixth embodiment of FIG6A. As shown in FIG6D, the high-pixel imaging lens 623 can capture images within a certain range and with high pixel count, thus achieving high resolution and low distortion. FIG6E is a schematic diagram illustrating another image captured by the electronic device 60 according to the sixth embodiment of FIG6A. As shown in FIG6E, the telephoto lens 624 has a high magnification function, which can capture distant images and magnify them to a high magnification. As can be seen from FIG. 6C to FIG. 6E , by framing with imaging lenses having different focal lengths and combining them with image processing technology, the zoom function can be implemented in the electronic device 60 . <Seventh embodiment> Please refer to FIG. 7 , which illustrates a schematic diagram of an electronic device 70 according to a seventh embodiment of the present disclosure. As shown in FIG. 7 , electronic device 70 is a smartphone and includes an imaging lens. Specifically, the imaging lenses include an ultra-wide-angle imaging lens 711 , a wide-angle imaging lens 712 , telephoto imaging lenses 713 and 714 , and a Time-of-Flight (TOF) module 716 . The TOF module 716 can also be other types of imaging lenses and is not limited to this configuration. Specifically, the imaging lens can be any of the imaging lenses described in the first through fifth embodiments, but the present disclosure is not limited thereto. Furthermore, the telephoto imaging lens 714 is used to bend the light path, but the present disclosure is not limited thereto. Depending on the camera specifications of electronic device 70, electronic device 70 may further include an optical image stabilization component (not shown). Furthermore, electronic device 70 may further include at least one focus assist module (not shown) and at least one sensor element (not shown). The focus assist module may be a flash module 715 that compensates for color temperature, an infrared rangefinder, or a laser focus module. The sensor element may be capable of sensing physical momentum and actuation energy, such as an accelerometer, a gyroscope, or a Hall Effect Element, to detect movement and jitter imposed by the user's hand or the external environment. This facilitates the autofocus function and optical image stabilization component of the imaging lens in electronic device 70, resulting in excellent image quality. This helps the electronic device 70 according to the present disclosure to have multiple shooting modes, such as optimized selfies, low-light HDR (High Dynamic Range) imaging, and high-resolution 4K video recording. In addition, the structures and configurations of the remaining components of the seventh embodiment are the same as those of the sixth embodiment and will not be further described here. <Eighth embodiment> Please refer to Figures 8A to 8C, where Figure 8A illustrates an imaging lens 810 according to an eighth embodiment of the present disclosure applied to a vehicle tool 80. Figure 8B illustrates another schematic diagram of the imaging lens 810 disposed in the vehicle tool 80 according to the eighth embodiment of Figure 8A. Figure 8C illustrates another schematic diagram of the imaging lens 810 disposed in the vehicle tool 80 according to the eighth embodiment of Figure 8A. As can be seen from Figures 8A to 8C, an electronic device (not shown) is applied to the vehicle tool 80, and the electronic device includes the imaging lens 810. In the eighth embodiment, there are six imaging lenses 810, and the imaging lenses 810 are automotive imaging lenses. The imaging lenses 810 can be any of the imaging lenses described in the first to fifth embodiments, but the present disclosure is not limited thereto. As shown in Figures 8A and 8B, the two imaging lenses 810 are located below the left and right rearview mirrors, respectively, and are used to capture image information within a viewing angle θ. Specifically, the viewing angle θ can satisfy the following condition: 40 degrees < θ < 90 degrees. This allows the capture of image information within the left and right lanes. As shown in Figures 8B and 8C, the other two imaging lenses 810 can be located within the interior of the vehicle tool 80, thereby enabling the driver to obtain external spatial information outside the cockpit, such as external spatial information I1, I2, I3, and I4, but this is not a limitation. Specifically, the two imaging lenses 810 are located near the interior rearview mirror and the rear window, respectively. Furthermore, the imaging lenses 810 can be located on the non-mirror surfaces of the left and right rearview mirrors of the vehicle tool 80, but this is not a limitation. Two imaging lenses 810 can be installed at the front and rear ends of the vehicle tool 80. Positioning the imaging lenses 810 at the front and rear ends of the vehicle tool 80 and below the left and right rearview mirrors provides a wider range of viewing angles, reducing blind spots and thereby improving driving safety. Furthermore, positioning the imaging lenses 810 around the vehicle tool 80 facilitates the identification of road conditions outside the vehicle tool 80, thereby facilitating automated assisted driving. Although the present invention has been disclosed above by way of implementation methods and examples, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent applications. 100,200,300,400,500,810: Imaging lens 110,210,310,410,510: Optical element 111,211,311,411,511: Injection mark 112,113,212,312,313: Matting structure 112a: Protrusion 120,220,320,420,520: Anti-reflection film 121: Nanostructure layer 121a: Ridge protrusion 122: Intermediate layer 141,241,341,441,541: Lens element 142,242,342,442,542: Lens barrel 143,2 43: Assembly component 144, 244, 344, 444, 544: Electronic photosensitive element 330, 430, 530: Adhesive element 60, 70: Electronic device 621: User interface 622, 711: Ultra-wide-angle imaging lens 623: High-pixel imaging lens 624, 713, 714: Telephoto imaging lens 625: Imaging signal processing component 712: Wide-angle imaging lens 715: Flash module 716: TOF module 80: Vehicle tool IMG: Imaging surface I1, I2, I3, I4: External spatial information L: Imaging light θ: Viewing angle H: Vertical height h: Height of each protrusion FIG1A is a schematic diagram of an imaging lens according to a first embodiment of the present disclosure; FIG1B is a perspective view of an optical element and an anti-reflection film according to the first embodiment of FIG1A; FIG1C is a cross-sectional view of the optical element and the anti-reflection film according to the first embodiment of FIG1A; FIG1D is a top view of the optical element and the anti-reflection film according to the first embodiment of FIG1A; FIG1E is a schematic diagram of the optical element and the anti-reflection film according to the first embodiment of FIG1A; FIG1F is a scanning electron microscope image of the anti-reflection film according to the first embodiment of FIG1A; FIG1G is a cross-sectional view of the optical element and the anti-reflection film according to the first embodiment of FIG1A; FIG1H is a reflectivity of the imaging lens according to the first embodiment of FIG1A; FIG2A is a schematic diagram of an imaging lens according to a second embodiment of the present disclosure; FIG2B is a perspective view of the optical element and the anti-reflection film according to the second embodiment of FIG2A; FIG2C is a schematic diagram of the optical element and the anti-reflection film according to the second embodiment of FIG2A; FIG3A is a schematic diagram of an imaging lens according to a third embodiment of the present disclosure; FIG3B is an object-side stereoscopic view of the optical element and the anti-reflection film according to the third embodiment of FIG3A; FIG3C is an image-side stereoscopic view of the optical element and the anti-reflection film according to the third embodiment of FIG3A; FIG3D is a schematic diagram of the optical element and the anti-reflection film according to the third embodiment of FIG3A; FIG4A is a schematic diagram of an imaging lens according to a fourth embodiment of the present disclosure; FIG4B is a schematic diagram of the optical element and the anti-reflection film according to the fourth embodiment of FIG4A; FIG5A is a schematic diagram of an imaging lens according to a fifth embodiment of the present disclosure; FIG5B is a schematic diagram of the optical element and the anti-reflection film according to the fifth embodiment of FIG5A; FIG6A is a schematic diagram of an electronic device according to a sixth embodiment of the present disclosure; FIG6B is another schematic diagram of the electronic device according to the sixth embodiment of FIG6A; FIG6C is a schematic diagram of an image captured by the electronic device according to the sixth embodiment of FIG6A; FIG6D is a schematic diagram of another image captured by the electronic device according to the sixth embodiment of FIG6A; Figure 6E is a schematic diagram of another image captured by the electronic device in the sixth embodiment of Figure 6A; Figure 7 is a schematic diagram of the electronic device in the seventh embodiment of the present disclosure; Figure 8A is a schematic diagram of the imaging lens applied to a vehicle tool in the eighth embodiment of the present disclosure; Figure 8B is another schematic diagram of the imaging lens configured on the vehicle tool in the eighth embodiment of Figure 8A; and Figure 8C is another schematic diagram of the imaging lens configured on the vehicle tool in the eighth embodiment of Figure 8A. 110: Optical components 111: injection mark 112,113: matte structure 120: Anti-reflective film

Claims

1. An imaging lens, comprising: an optical element through which an imaging ray passes, and the optical element having an injection mark; and an anti-reflective film disposed on at least a portion of the surface of the optical element, and comprising: a nanostructure layer having a plurality of non-directionally extending ridge protrusions, wherein a bottom of each ridge protrusion is closer to the optical element than a top, and each ridge protrusion tapers from the bottom to the top; and an intermediary layer disposed between the optical element and the nanostructure layer, and comprising: at least two first dielectric layers; and at least one second dielectric layer, the refractive index of the at least one second dielectric layer being different from the refractive index of each of the first dielectric layers, and the at least one second dielectric layer being disposed between the at least two first dielectric layers; wherein... A portion of the top of the interlayer is in contact with air; wherein the thickness of each of the first dielectric layers is LT1, and the thickness of the at least one second dielectric layer is LT2, satisfying the following conditions: 42 nm < LT1 < 112 nm; and 1 nm < LT2 < 35 nm.

2. The imaging lens as claimed in claim 1, wherein the thickness of each of the first dielectric layers is LT1, which satisfies the following condition: 45 nm < LT1 < 90 nm.

3. The imaging lens as claimed in claim 1, wherein the thickness of the at least one second dielectric layer is LT2, which satisfies the following condition: 3 nm < LT2 < 27 nm.

4. The imaging lens as claimed in claim 1, wherein the intermediate layer further comprises: at least one third dielectric layer, the refractive index of the at least one third dielectric layer being different from the refractive index of the at least one second dielectric layer, and the at least one third dielectric layer being disposed adjacent to the at least one second dielectric layer; wherein, The thickness of the at least third dielectric layer is LT3, which satisfies the following condition: 3 nm < LT3 < 38 nm.

5. The imaging lens as claimed in claim 4, wherein the thickness of each of the first dielectric layers is LT1 and the thickness of the at least one third dielectric layer is LT3, which satisfies the following condition: 2.3 < LT1 / LT3 < 9.

6.

6. The imaging lens as claimed in claim 4, wherein the refractive index of the at least one second dielectric layer is higher than the refractive index of each of the first dielectric layers and the refractive index of the at least one third dielectric layer.

7. The imaging lens as claimed in claim 1, wherein the average height of the ridges is greater than 78 nm and less than 308 nm.

8. The imaging lens as claimed in claim 7, wherein the main component of the nanostructure layer is aluminum oxide.

9. The imaging lens as claimed in claim 1, wherein the primary component of each of the first dielectric layers is silicon oxide.

10. The imaging lens as claimed in claim 1, wherein the primary component of the at least one second dielectric layer is titanium oxide.

11. The imaging lens as claimed in claim 4, wherein the primary component of the at least one third dielectric layer is silicon oxide.

12. The imaging lens of claim 1, wherein the average reflectance of at least a portion of the surface of the optical element having the nanostructure layer is R4276 for light wavelengths from 420 nm to 760 nm, which satisfies the following condition: 0% < R4276 < 0.2%.

13. The imaging lens of claim 12, wherein the average reflectance of at least a portion of the surface of the optical element having the nanostructure layer is R4276 corresponding to light wavelengths from 420 nm to 760 nm, which satisfies the following condition: 0% < R4276 < 0.1%.

14. The imaging lens of claim 1, wherein the optical element comprises: an extinction structure that forms an uneven surface on a surface of the optical element, and the extinction structure is integrally formed with the optical element.

15. The imaging lens as claimed in claim 14, wherein the extinction structure has a plurality of protrusions and the protrusions are arranged in a regular pattern.

16. The imaging lens as claimed in claim 15, wherein the height of each of the protrusions is greater than 40 μm and less than 1000 μm.

17. The imaging lens as claimed in claim 16, wherein the height of each of the protrusions is greater than 50 μm and less than 500 μm.

18. The imaging lens as claimed in claim 1 further comprises: an adhesive element for securing the optical element.

19. An electronic device comprising: an imaging lens as described in claim 1.

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