Method of manufacturing semiconductor device and pellicle

Abstract

A method for manufacturing a semiconductor device includes heating a thin film disposed above a photomask. Photochemical radiation is passed through the thin film to selectively expose a photoresist layer on a substrate. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer.

Description

[Technical Field]

[0001] None [Previous Technology]

[0002] The film is a thin, transparent film that stretches over the frame and is adhered to the photomask to protect it from damage, dust, and / or moisture. In extreme ultraviolet (EUV) lithography, films with high transparency, high mechanical strength, and low or no contamination in the EUV wavelength region are typically used. [Summary of the Invention]

[0003] None

Implementation Method

[0005] It should be understood that the following disclosure provides many different embodiments or instances for implementing various features of this disclosure. Specific embodiments or instances of elements and configurations are described below to simplify this disclosure. Of course, these elements and configurations are merely examples and are not intended to be limiting. For example, the size of components is not limited to the range or values ​​disclosed, but may depend on process conditions and / or the desired nature of the apparatus. Furthermore, in the following description, the formation of a first feature above or on a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features may be formed to be inserted between the first and second features so that the first and second features are not in direct contact. Various features may be drawn at any scale for simplicity and clarity. In the accompanying drawings, some layers / features may be omitted for simplicity.

[0006] Additionally, spatial relative terms, such as “below,” “under,” “lower,” “above,” “upper,” and similar terms, may be used herein for ease of description to describe the relationship between one or more elements or features illustrated in the figures and another element or feature. Spatial relative terms are intended to cover different orientations of the device in use or operation other than those depicted in the figures. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptive terms used herein may be interpreted accordingly. Furthermore, the term “made of” may mean “comprising” or “consisting of.” Additionally, in the following manufacturing processes, one or more additional operations may exist between the described operations, and the order of operations may be changed. In this disclosure, the phrase “at least one of A, B, and C” means any one of A, B, C, A+B, A+C, B+C, or A+B+C, and does not mean one from A, one from B, and one from C, unless otherwise described. The materials, configurations, structures, operations, and / or dimensions explained by way of one embodiment may be applied to other embodiments, and their detailed description may be omitted.

[0007] EUV lithography is one of the key technologies used to extend Mohr's Law. However, due to wavelengths ranging from 193 nm (ArF) to 13.5 nm, EUV sources suffer strong power fading due to environmental adsorption. Although the stepper / scanner chamber operates under vacuum to prevent strong EUV adsorption of gases, maintaining high EUV transmittance from the EUV source to the wafer remains an important factor in EUV lithography.

[0008] Thin films typically require high transparency and low reflectivity. In UV or DUV lithography, the film is made of a transparent resin film. However, in EUV lithography, resin films are unacceptable, and in some embodiments, non-organic materials such as polycrystalline silicon, silicates, or metal films are used.

[0009] Carbon nanotubes (CNTs) are any of the suitable materials for thin films of EUV photomasks because CNTs have a high EUV transmittance of more than 96.5%. Generally, thin films of EUV reflective masks require the following properties: (1) long lifetime during hydrogen-rich radical operation in EUV steppers / scanners; (2) strong mechanical strength to minimize sagging during vacuum pumping and degassing operations; (3) high or perfect blocking properties against particles larger than about 20 nm (lethal particles); and (4) good heat dissipation to prevent the film from burning through by EUV radiation. Other nanotubes made of non-carbon materials are also suitable for thin films of EUV photomasks. In some embodiments disclosed herein, the nanotubes are one-dimensional elongated tubes with a diameter ranging from about 0.5 nm to about 100 nm.

[0010] In this disclosure, the thin film of the EUV photomask includes a mesh film having a plurality of nanotubes forming a mesh structure. Additionally, a method for treating the mesh film to remove contaminants and increase its mechanical strength is also disclosed.

[0011] Figures 1A and 1B illustrate an EUV film 10 according to an embodiment of the present disclosure. In some embodiments, the film 10 for an EUV reflective shield includes a main mesh film 100 disposed above and attached to a film frame 15. In some embodiments, the main mesh film 100 is a transparent film that is transparent to electromagnetic radiation such as EUV radiation. In some embodiments, the transparent film 100 has an EUV transmittance greater than 96.5%. The transparent film 100 is opaque to some electromagnetic wavelengths, such as infrared or visible light radiation, and transparent to other electromagnetic wavelengths, such as EUV or X-ray radiation. In some embodiments, as illustrated in Figure 1A, the main mesh film 100 includes a plurality of single-walled nanotubes 100S, and in other embodiments, as illustrated in Figure 1B, the main mesh film 100 includes a plurality of multi-walled nanotubes 100M. In some embodiments, the single-walled nanotubes are carbon nanotubes. In other embodiments, the single-walled nanotubes are nanotubes made of non-carbon materials. In some embodiments, the non-carbon material includes at least one of the following: boron nitride (BN), SiC, or a transition metal dichalcogenide (TMD) represented by MX2, where M = Mo, W, Pd, Pt, and / or Hf, and X = S, Se, and / or Te. In some embodiments, TMD is one of the following: MoS2, MoSe2, WS2, or WSe2.

[0012] In some embodiments, some of the single-walled nanotubes form bundles of nanotubes attached to each other.

[0013] In some embodiments, the multi-walled nanotubes are coaxial nanotubes having two or more tubes coaxially surrounding an inner tube. In some embodiments, the main mesh membrane 100 comprises only one type of nanotube (single-walled / multi-walled nanotubes or materials), and in other embodiments, different types of nanotubes form the main mesh membrane 100. In some embodiments, the multi-walled nanotubes are multi-walled carbon nanotubes. In some embodiments, some of the multi-walled nanotubes form a bundle of nanotubes attached to each other.

[0014] In some embodiments, when mounted onto an EUV mask, a film (support) frame 15 is attached to the main mesh film 100 to maintain the space between the main mesh film and the EUV mask (pattern area). The film frame 15 is attached to the surface of the EUV mask by a suitable bonding material. In some embodiments, the bonding material is an adhesive, such as an acrylate or silicone adhesive or a cross-linked adhesive. The size of the frame structure is larger than the area of ​​the black boundary of the EUV mask, such that the film covers not only the circuit pattern area of ​​the mask but also the black boundary.

[0015] Figures 2A, 2B, 2C and 2D illustrate various views of a multi-walled nanotube according to an embodiment of the present disclosure.

[0016] In some embodiments, the nanotubes in the main mesh membrane 100 include multi-walled nanotubes, which are also referred to as coaxial nanotubes. Figure 2A illustrates a perspective view of a multi-walled coaxial nanotube having three tubes 210, 220, and 230, and Figure 2B illustrates a cross-sectional view thereof. In some embodiments, the inner tube 210 and the outer tubes 220 and 230 are carbon nanotubes. In other embodiments, one or more of the inner tubes or the two outer tubes are non-carbon nanotubes, such as boron nitride nanotubes.

[0017] The number of tubes in a multi-walled nanotube is not limited to three. In some embodiments, the multi-walled nanotube has two coaxial nanotubes as illustrated in Figure 2C, and in other embodiments, the multi-walled nanotube includes an innermost tube 210 and a first to Nth nanotube including an outermost tube 200N, where N is a natural number from 1 to about 20, as illustrated in Figure 2D. In some embodiments, N ranges from 5 to 10. In some embodiments, at least one of the first to Nth outer layers is a nanotube coaxially surrounding the innermost tube 210. In some embodiments, all the innermost tubes 210 and the first to Nth outer layers are carbon nanotubes. In other embodiments, one or more of the tubes are non-carbon nanotubes.

[0018] In some embodiments, the diameter of the innermost nanotube ranges from about 0.5 nm to about 20 nm, and in other embodiments it ranges from about 1 nm to about 10 nm. In some embodiments, the diameter of the multi-walled nanotube (i.e., the diameter of the outermost tube) ranges from about 3 nm to about 40 nm, and in other embodiments it ranges from about 5 nm to about 20 nm. In some embodiments, the length of the multi-walled nanotube ranges from about 0.5 μm to about 50 μm, and in other embodiments it ranges from about 1.0 μm to about 20 μm.

[0019] Figures 3A, 3B and 3C illustrate a method for manufacturing a nanotube network film for a thin film according to an embodiment of the present disclosure.

[0020] In some embodiments, the carbon nanotubes are formed by a chemical vapor deposition (CVD) process. In some embodiments, the CVD process, as illustrated in Figure 3A, is performed using a vertical furnace, and the synthesized nanotubes are deposited on a support film 80, as illustrated in Figure 3B. In some embodiments, the carbon nanotubes are formed from a carbon source gas (precursor) using a suitable catalyst such as Fe or Ni. The mesh film 100 formed above the support film 80 then detaches from the support film 80 and is transferred to a film frame 15, as illustrated in Figure 3C. In some embodiments, the stage or pedestal on which the support film 80 is mounted rotates continuously or intermittently (stepping), causing the synthesized nanotubes to be deposited on the support film 80 in different or random directions.

[0021] Figure 3D illustrates a method for manufacturing a mesh film, and Figure 3E illustrates a flowchart of a manufacturing method 300 according to an embodiment of the present disclosure. In operation S310, the nanotubes are formed by a CVD method in some embodiments, as previously explained. In some embodiments, the nanotubes are formed by various other methods such as arc discharge or laser ablation methods.

[0022] In operation S320, the nanotubes are dispersed in a solution, as illustrated in Figure 3D. The solution includes a solvent such as water or an organic solvent, and a surfactant such as sodium dodecyl sulfate (SDS). The nanotubes are of one type or two or more types of nanotubes (materials and / or wall counts).

[0023] As shown in Figure 3D, the support membrane 80 is placed between the chamber containing the nanotube dispersion solution and the cylinder and vacuum chamber. In some embodiments, the support membrane is an organic or inorganic porous or mesh material. In some embodiments, the support membrane is a woven or non-woven fabric. In some embodiments, the support membrane has a circular shape that can accommodate a 150 mm × 150 mm square (the size of an EUV mask) film.

[0024] As illustrated in Figure 3D, the pressure in the vacuum chamber is reduced, causing pressure to be applied to the solvent in the chamber or cylinder. Since the mesh or pore size of the support membrane is much smaller than the size of the nanotubes, in operation S330, the nanotubes are trapped by the support membrane while the solvent passes through it. In operation S340, the support membrane on which the nanotubes are deposited detaches from the filtration device in Figure 3D and is then dried. In some embodiments, the deposition by filtration is repeated to obtain a nanotube network layer of the desired thickness. In some embodiments, after depositing nanotubes in solution, other nanotubes are dispersed in the same or a new solution, and the filtration deposition is repeated. In other embodiments, another filtration deposition is performed after the nanotubes are dried. In the repetitions, the same type of nanotubes are used in some embodiments, and different types of nanotubes are used in other embodiments. In some embodiments, the nanotubes dispersed in solution include multi-walled nanotubes.

[0025] Figures 4A and 4B through 6A and 6B illustrate cross-sectional views (“A”) and plan (top) views (“B”) of various stages for manufacturing a thin film for an EUV photomask according to embodiments of the present disclosure. It should be understood that additional operations may be provided before, during, and after the processes illustrated in Figures 4A through 6B, and some additional embodiments of the methods described below may be replaced or eliminated. The order of operations / processes may be interchangeable. Materials, configurations, methods, processes, and / or dimensions explained with respect to the foregoing embodiments may be used in the following embodiments, and their detailed descriptions may be omitted.

[0026] As illustrated in Figures 4A and 4B, the nanotube layer 90 is formed on the support film 80 by one or more methods as explained above. In some embodiments, the nanotube layer 90 includes single-walled nanotubes, multi-walled nanotubes, or mixtures thereof. In some embodiments, the nanotube layer 90 includes only single-walled nanotubes. In some embodiments, the nanotubes are carbon nanotubes.

[0027] Next, as illustrated in Figures 5A and 5B, the thin film frame 15 is attached to the nanotube layer 90. In some embodiments, the thin film frame 15 is formed of one or more layers of crystalline silicon, polycrystalline silicon, silicon oxide, silicon nitride, alumina, or ceramic material. In some embodiments, as illustrated in Figure 5B, the thin film frame 15 has a rectangular (including square) frame shape that is larger than the black boundary area of ​​the EUV mask and smaller than the substrate of the EUV mask. In some embodiments, the thin film frame is attached to the nanotube layer by a cold soldering operation.

[0028] Next, as illustrated in Figures 6A and 6B, in some embodiments, the nanotube layer 90 and the support film 80 are cut into rectangular shapes, the size of which is the same as or slightly larger than the film frame 15, and then the support film 80 is detached or removed. When the support film 80 is made of an organic material, the support film 80 is removed by wet etching using an organic solvent.

[0029] Figures 7A and 7B are flowcharts illustrating a method for manufacturing a thin film / photomask structure according to embodiments of the present disclosure. It should be understood that additional operations may be provided before, during, and after the processes illustrated in Figures 7A and 7B, and some of the additional embodiments of operations described below may be replaced or eliminated for the method. The order of operations / processes may be interchangeable.

[0030] In the process described in Figure 7A, the nanotube is formed in operation S410 according to any of the methods disclosed above, and the nanotube film is formed in operation S420 according to any of the methods disclosed above. Next, a conductive electrode is formed on the thin film frame in operation S430. The nanotube film is attached to the thin film frame and the conductive electrode in operation S440, and the thin film frame is subsequently attached to the photomask in operation S450.

[0031] In another embodiment of this disclosure, the thin film / photomask structure is formed in a sequence different from operation 500, as illustrated in the flow diagram of Figure 7B. As in the flow diagram of Figure 7A, the nanotube is formed in operation S510 according to any of the methods disclosed above, and the nanotube film is formed in operation S520 according to any of the methods disclosed above. Next, the nanotube film is attached to the thin film frame in operation S530. A conductive electrode is subsequently formed over the nanotube film in operation S540 to form a thin film. Then, the thin film frame is attached to the photomask in operation S550 to form the thin film / photomask structure.

[0032] The method for manufacturing the thin film / photomask structure will be explained in further detail below.

[0033] Figures 8A and 8B illustrate schematic diagrams of thin films according to embodiments of the present disclosure. Figure 8A is a cross-sectional view across the thin film 10, thus illustrating another nanotube film formed above the conductive electrode 55 on the thin film frame 15. Figure 8B is a cross-sectional view along the thin film frame 15.

[0034] Figures 9A, 9B, 9C, and 9D illustrate schematic diagrams of a method for manufacturing a thin film according to an embodiment of the present disclosure. An insulating thin film frame 15 is provided, as illustrated in Figure 9A. The thin film frame 15 may be electrically and thermally insulating. In some embodiments, the thin film frame 15 is made of crystalline silicon, polycrystalline silicon, silicon oxide, silicon nitride, alumina, ceramic materials, or any other suitable electrically and thermally insulating material.

[0035] The two opposing sides of the frame 15 are coated with a conductive material to form conductive electrodes 55, as illustrated in Figure 9B. The conductive material of the electrodes may be a conductive material with a high melting point. In some embodiments, the conductive material is a metal, including Cu, Au, Ni, Ag, and alloys thereof, and any other suitable metal. In some embodiments, the conductive material includes other conductive materials, such as graphite. The conductive material is deposited over the frame by any suitable deposition method including chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), electroplating, and electroless electroplating. The conductive material coating on the two opposing sides of the frame 15 allows the subsequently formed thin film to be uniformly heated by current passing through the film from one side to the other.

[0036] The nanotube membrane 100 prepared by any of the methods disclosed herein is attached to the frame 15 and the conductive electrode 55, as illustrated in Figure 9C, to form the thin film in Figure 9D. Figure 9E illustrates a cross-sectional view of the thin film 10 along line AA, thereby illustrating the nanotube membrane 100 disposed above the conductive electrode 55 and the thin film frame 15.

[0037] Figures 10A, 10B, 10C, and 10D illustrate schematic diagrams of a method for manufacturing a thin film according to an embodiment of the present disclosure. An insulating thin film frame 15 is provided, as illustrated in Figure 10A. The thin film frame 15 is made of any of the electrical and thermal insulating materials disclosed above.

[0038] A nanotube membrane 100 prepared by any of the methods disclosed herein is disposed above and attached to a frame 15, as illustrated in Figure 10B. Next, a mask or clamp 45 is disposed above the nanotube membrane, thereby exposing the opposing sides of the frame 15. The two exposed opposing sides of the frame 15 are coated with the conductive material shown in Figure 10C to form conductive electrodes 55. The mask or clamp 45 is removed in Figure 10D, thus illustrating the thin film 10'. The electrodes may be formed from any of the high melting point conductive materials disclosed above. Figure 10E illustrates a cross-sectional view of the thin film 10' along line BB, thus illustrating the conductive electrodes 55 disposed above the nanotube membrane 100 and the thin film frame 15.

[0039] Figures 11A, 11B, and 11C illustrate schematic diagrams of a method for manufacturing a thin film according to an embodiment of the present disclosure. An insulating thin film frame 15 is provided, as illustrated in Figure 11A. The thin film frame 15 is made of any of the electrical and thermal insulating materials disclosed above.

[0040] The nanotube membrane 100 prepared by any of the methods disclosed herein is disposed above and attached to the frame 15, as illustrated in Figure 11B. Next, a conductive plate 50 is disposed on and attached to the opposite side of the frame 15 to form a thin film 10”, as illustrated in Figure 11C. The conductive plate 50 may be formed from any of the materials disclosed above for use in the conductive electrode 55. Figure 11D illustrates a cross-sectional view of the thin film 10” along line CC, thereby illustrating the conductive electrode 55 disposed above the nanotube membrane 100 and the thin film frame 15.

[0041] Figures 12A and 12B illustrate plan views of a thin film frame with conductive electrodes according to an embodiment of the present disclosure. In some embodiments, the thin film frame 15 is rectangular in shape, and the conductive electrode 55 is formed on the shorter opposing side, as illustrated in Figure 12A. In other embodiments, the conductive electrode is formed on the longer opposing side of the frame, as illustrated in Figure 12B. Conductive leads 85, such as wires, are attached to the conductive electrode 55. The conductive leads 85 may be formed of any suitable conductive material including copper, aluminum, and their alloys. In some embodiments, the conductive leads are attached to a power source. Figure 12C is a cross-sectional view of the thin film along line DD, including the nanotube film 100 disposed above the conductive electrode and the frame.

[0042] In some embodiments, a plurality of electrodes 55 are disposed on a thin-film frame, as illustrated in Figures 13A and 13B. Conductive leads 85 are attached to each of the plurality of electrodes 55. In some embodiments, the plurality of electrodes 55 are disposed on the shorter side of a rectangular frame 15, as illustrated in Figure 13A, and in other embodiments, the plurality of electrodes 55 are disposed on the longer side of a rectangular frame, as illustrated in Figure 13B. Five electrodes are illustrated on each side of the frame, but this disclosure is not limited to five electrodes on each side. The number of electrodes on each opposite side of the frame ranges from two to ten in some embodiments, and is greater than ten in other embodiments. The electrodes are made of any of the conductive materials disclosed herein.

[0043] The conductive electrode 55 may be formed by any suitable technique including: shielding a portion of the frame and depositing conductive material over the exposed portion of the frame, and then depositing a nanofilm 100 on the conductive electrode 55 and the frame, as illustrated in Figure 13C. Figure 13C is a cross-sectional view along line EE after the carbon nanofilm has been placed over the conductive electrode 55 and the frame 15. In other embodiments, a plurality of recesses are formed in the frame, and conductive material is deposited in the recesses. In some embodiments, the recesses are formed by optical lithography and etching techniques. The conductive material is then deposited in the recesses, and the electrode is planarized, for example, by an etch-back operation or a chemical mechanical polishing operation. The nanofilm 100 is then placed over the frame 15 and the conductive electrode 55. As illustrated in the cross-sectional view along line EE, in Figure 13D, the nanofilm 100 contacts both the frame 15 and the conductive electrode 55. In some embodiments, the nanofilm 100 is flush with the frame 15 and the conductive electrode 55.

[0044] In some embodiments, electrodes 55 are formed on each side of the frame 15, as illustrated in Figure 13E. Electrodes 55 may be formed from any of the same materials and operations disclosed herein.

[0045] The film 10 is subsequently attached to the surface of the EUV photomask 60 via an insulating frame 15 using a suitable bonding material 65. In some embodiments, the bonding material is an adhesive, such as an acrylate or silicone adhesive or a cross-linked adhesive. The frame 15 is larger than the area of ​​the black border 63 of the EUV photomask 60, such that the film covers not only the circuit pattern area 62 of the photomask 60 but also the black border 63, as illustrated in Figure 14.

[0046] The conductive lead is connected to the power supply 135 or the controller 150 during semiconductor device manufacturing operations. During operation of an EUV optical lithography apparatus, including a stepper or scanner, current is supplied from the power supply 135 to the conductive electrode 55 via the conductive lead 85. The current may be alternating current (AC) or direct current (DC). In some embodiments, a voltage of about 5 V to about 500 V is applied to the conductive electrode 55. In some embodiments, a voltage of about 50 V to about 400 V is applied to the conductive electrode 55, and in other embodiments, a voltage of about 100 V to 300 V is applied to the conductive electrode 55. The current heats the nanotube film of the thin film by Joule heating.

[0047] Heating the nanotube film improves optical lithography exposure operations. In some embodiments, heating the nanotube film removes impurities from the film, thereby maintaining high EUV radiation transmittance through the film. In some embodiments, the electric field across the nanotube film is attributed to electrostatic forces that detach contaminant particles from the film, thus preventing contaminant particles from approaching the film. Heating the nanotube film can also burn or decompose contaminant particles with contaminant particles attached to the film. Heating the nanotube film removes metallic catalysts, such as Fe catalysts used in the production of carbon nanotubes. In some embodiments, heating the nanotube film provides an increase of up to 1% in the transmittance of EUV radiation 70 through the film 10.

[0048] In some embodiments, the nanofilm 100 is heated to a temperature of about 500°C to about 2000°C. In other embodiments, the nanofilm is heated to a temperature of about 750°C to about 1750°C, and in still other embodiments, the nanofilm is heated to a temperature of about 1000°C to about 1500°C. Heating the nanofilm to temperatures below the disclosed range may result in insufficient removal of contaminants from the nanofilm 100. Heating the nanofilm to temperatures above the accepted range may damage the film / photomask structure and may result in reduced optical lithography performance and yield. In some embodiments, varying amounts of power, including no power, are applied to the various electrodes 55. In some embodiments, each electrode 55 is separately controlled by a controller 150. Only the nanofilm is heated by Joule heating. The insulating frame 15 isolates the photomask 60 from the heated nanofilm, and current is applied to the conductive electrodes 55 in the embodiments disclosed herein.

[0049] In some embodiments, the temperature sensor 140 is positioned adjacent to the thin film 10 to monitor the temperature. In some embodiments, the temperature sensor 140 communicates with a controller via conductive leads 145, and in other embodiments, communicates wirelessly with the controller. Power supplied to the thin film 10, and therefore the temperature of the nanofilm, is controlled by a controller 150 in some embodiments.

[0050] A method 600 for manufacturing a semiconductor device according to an embodiment of the present disclosure is illustrated in the flowchart of Figure 15A. A thin film 10 disposed above a photomask 60 is heated in operation S610. Photochemical radiation 70 is directed through the thin film in operation S630. In some embodiments, the photomask 60 is an EUV reflective photomask. EUV radiation 70 is provided by an EUV radiation source. In operation S630, EUV radiation 70 passes through a nanotube film 100, is reflected off the photomask 60 in a pattern-by-pattern manner, and is directed a second time through the nanotube film 100 to selectively expose a photoresist layer disposed above a substrate. In some embodiments, the substrate is a semiconductor wafer. The selectively exposed photoresist layer is then developed in operation S640 to form a pattern in the photoresist layer.

[0051] A method 700 for manufacturing a semiconductor device according to another embodiment of the present disclosure is illustrated in the flowchart of Figure 15B. Photochemical radiation 70 reflected from a photomask 60 passes through a thin film 10 disposed above the photomask in operation S710. Current is applied to the thin film 10 in operation S720, while photochemical radiation 70 passes through the thin film 10. Photochemical radiation 70 passing through the thin film 10 selectively exposes a photoresist layer disposed on a substrate in operation S730. In some embodiments, the substrate is a semiconductor wafer. The selectively exposed photoresist layer is then developed in operation S740 to form a pattern in the photoresist layer.

[0052] A method 800 for manufacturing a semiconductor device according to another embodiment of the present disclosure is illustrated in the flowchart of Figure 15C. A thin film / photomask structure 160 is placed in an optical lithography apparatus in operation S810. The thin film / photomask structure 160 includes a thin film 10 disposed above a photomask 60. The thin film 10 is heated in operation S820 by applying an electric current to the thin film 10. Photochemical radiation 70 is directed through the thin film 10 in operation S830 to selectively expose a photoresist layer disposed on a substrate. The selectively exposed photoresist layer is then developed in operation S840 to form a pattern in the photoresist layer.

[0053] In some embodiments, the optical lithography apparatus is an EUV optical lithography apparatus, including a scanner or a stepper. In some embodiments, a portion of the lithography apparatus including the film / mask structure 160 is under vacuum during the optical lithography exposure operation. In some embodiments, the pressure in the vacuum is equal to or less than 10 Pa; in other embodiments, the pressure ranges from 0.1 Pa to 10 Pa. In some embodiments, the Joule heating treatment is performed in an inert gas environment, such as N2 and / or Ar.

[0054] In some embodiments, the conductive lead 85 connected to the conductive electrode 55 is further connected to a wire on the outside of the optical lithography exposure device, and multiple wires are connected to the power supply 150.

[0055] In some embodiments, as illustrated in Figure 16, a Joule heating operation causes individual discrete nanotubes 100M (single-walled or multi-walled nanotubes) to bond and form a nanotube bundle 100B with a seamless graphite structure, wherein the nanotubes are firmly bonded or joined so as not to merely contact each other. Adjacent conductive nanotubes carrying current will attract each other via Ampere forces. In some embodiments, three or more nanotubes are connected (bonded or joined) to form a nanotube bundle. In some embodiments, the number of nanotubes in a bundle can be up to 10. The bundle provides stronger support for the film and increases the film's lifetime. The bundle increases the film's resistance to etching caused by hydrogen radicals and hydrogen ions generated during optical lithography operations.

[0056] In some embodiments, such as the carbon nanotube membrane 100 formed before the Joule heating treatment does not include or includes a small number of nanotube bundles, and the number of carbon nanotube bundles increases after the Joule heating treatment.

[0057] In some embodiments, the carbon nanotube film 100 formed prior to the Joule heating treatment comprises an Sp3 carbon structure, such as amorphous carbon. As illustrated in Figure 17, the Joule heating treatment removes amorphous carbon from the film and / or converts the amorphous carbon (Sp3 carbon structure) to an Sp2 carbon structure. In some embodiments, the amorphous carbon is graphitized to form a crystalline structure. In some embodiments, the crystalline amorphous carbon forms one or more outer tubes surrounding the inner carbon nanotubes to form multi-walled nanotubes, the one or more outer tubes having first or more wall structures. In some embodiments, the amount of amorphous carbon in the film formed prior to the Joule heating is in the range of about 1 wt.% to about 50 wt.%, and the amount of amorphous carbon in the film after the Joule heating is less than about 3 wt.%. In some embodiments, the amount of amorphous carbon in the film after the Joule heating is in the range of about 0.5 wt.% to about 2.5 wt.% based on the total weight of the film. In some embodiments, all Sp3 carbon structures are removed or transformed, and therefore no peak is observed at the D band (1360 cm⁻¹) in the Raman spectrum of the film after Joule heating treatment. In other embodiments, a portion of the Sp3 carbon structure is retained, and a small peak at the D band is observed. In some embodiments, the film comprises Sp2 carbon structures, such as graphite or graphene other than carbon nanotubes, replacing carbon nanotubes.

[0058] Figures 18A to 18E illustrate schematic diagrams of catalyst removal and bundle formation performed by Joule heating according to embodiments of the present disclosure.

[0059] As described above, the nanotube membrane 100 may include residual catalyst or catalyst particles 89, as illustrated in Figure 18A. Joule heating treatment may remove a portion (see Figure 18B) or all (see Figure 18C) of the residual catalyst from the membrane. Furthermore, the separated nanotubes illustrated in Figure 18A may be converted into nanotube bundles by Joule heating treatment, as illustrated in Figures 18D and 18E. In some embodiments, the amount of residual catalyst in the membrane formed prior to Joule heating is in the range of about 7 wt.% to about 15 wt.% based on the total weight of the membrane, and the amount of residual catalyst in the membrane after Joule heating is less than about 2 wt.% based on the total weight of the membrane. In some embodiments, the amount of residual catalyst in the membrane after Joule heating is in the range of about 0.1 wt.% to about 1.5 wt.% based on the total weight of the membrane.

[0060] As illustrated in Figure 19, in some embodiments, the electric field generated at the thin film is attributed to electrostatic forces that repel contaminant particles 40, thereby preventing contamination of the thin film and a subsequent decrease in EUV radiation transmittance.

[0061] In other embodiments, heating generated by an electric current is sufficient to decompose, evaporate or burn contaminant particles 40 on the surface of the nanotube membrane 100, as illustrated in Figure 20, thereby increasing the EUV radiation transmittance of the thin film 10.

[0062] The embodiments disclosed herein also reverse and prevent wrinkles in the nanofilm. As illustrated in Figure 21A, wrinkles in the nanofilm can cause large deflections of the film, which can induce film breakage. Additionally, wrinkles can induce critical dimension (CD) errors in the pattern to be formed because a portion of the EUV radiation 70 can be reflected away from the desired radiation path by the wrinkles. Therefore, the total energy required to expose the photoresist layer will be reduced. As illustrated in Figure 21B, a voltage is applied across the nanofilm to flatten the wrinkles. In some embodiments, a voltage of approximately 5 V to approximately 50 V is sufficient to reverse or prevent film wrinkles.

[0063] The Joule heating treatment disclosed herein also reduces the etching rate of the nanotube film. Hydrogen plasma, including hydrogen ions and hydrogen radicals, is generated by EUV lithography. During EUV lithography, the hydrogen plasma etches carbon nanotubes and graphene in the film, thereby shortening the film's lifetime. The high temperature of the film caused by Joule heating makes it more difficult for hydrogen ions and radicals to adhere to the film, thereby hindering the etching rate of the hydrogen plasma.

[0064] As explained above, the controller 150 is used to control the power supplied to the thin film, and thus control the temperature of the nanofilm 100. In some embodiments, the controller 150 is a computer system. Figures 22A and 22B illustrate a computer system 150 for controlling the power supply and applying current to individual electrodes 55 according to various embodiments of the present disclosure. The controller 150 can also be used to control heating operations S610, S720, and S820. In some embodiments, the controller is a module of a larger computer system that controls other functions of the optical lithography exposure apparatus, including the movement of the stepper / scanner, vacuum atmosphere, and EUV radiation exposure of the photoresist-coated substrate. Figure 22A is a schematic diagram of the computer system 150 controlling the power supply 135 and the temperature sensor 140.

[0065] As illustrated in Figure 22A, in some embodiments, computer system 150 includes computer 1001, which includes optical disc read-only memory (e.g., CD-ROM or DVD-ROM) drive 1005 and disk drive 1006, keyboard 1002, mouse 1003 (or other similar input device) and monitor 1004.

[0066] Figure 22B is a diagram illustrating the internal configuration of computer system 150. In Figure 22B, computer 1001, in addition to optical disk drive 1005 and magnetic disk drive 1006, also includes one or more processors 1011, such as microprocessor unit (MP) or central processing unit (CPU); read-only memory (ROM) 1012, in which programs, such as boot programs, are stored; random access memory (RAM) 1013, which is connected to processor 1011 and temporarily stores commands for application programs in random access memory (RAM) 1013, and provides a temporary electronic storage area; hard disk 1014 for storing application programs, operating system programs and data; and data communication bus 1015 connecting processor 1011, ROM 1012 and similar devices. Please note that computer 1001 may include a network card (not shown) for providing connectivity to a computer network, such as a local area network (LAN), a wide area network (WAN), or any other useful computer network used by computer system 150 and power supply 135. In various embodiments, controller 150 communicates via wireless or hardwired connections to deposition equipment 200 used in semiconductor device manufacturing operations, its components, and other tools.

[0067] A program for causing the computer system 150 to execute a method for controlling the heating of the membrane 100 is stored on an optical disc 1021 or a magnetic disk 1022 and transferred to a hard disk 1014, which is inserted into an optical disc drive 1005 or a magnetic disk drive 1006. Alternatively, the program is transferred to the computer system 150 via a network (not shown) and stored on the hard disk 1014. During execution, the program is loaded into RAM 1013. The program is loaded from the optical disc 1021 or the magnetic disk 1022 or, in various embodiments, directly from the network.

[0068] The stored program does not necessarily need to include, for example, an operating system (OS) or a third-party program to cause the computer 1001 to perform the methods disclosed herein. In some embodiments, the program may only include a command portion to invoke appropriate functions (modules) in control mode and obtain desired results. In the various embodiments described herein, the controller 150 communicates with the power supply 135 and the temperature sensor 140 to control its various functions.

[0069] Controller 150 provides control data to system components and receives process and / or status data from those system components. For example, in some embodiments, controller 150 includes a microprocessor, memory (e.g., volatile or non-volatile memory), and digital I / O ports capable of generating control voltages sufficient to communicate and initiate inputs to the processing system and monitor outputs from power supply 135 and temperature processor 140. Furthermore, processing recipes may be stored at the controller. Additionally, controller 150 analyzes process and / or status data, compares the process and / or status data with target process and / or status data, and uses the comparison results to modify the process and / or control system components. Furthermore, controller 150 analyzes process and / or status data, compares the process and / or status data with historical process and / or status data, and uses the comparison results to predict, prevent, and / or issue faults or alarms.

[0070] Figure 23A illustrates a flowchart of a method 900 for manufacturing a semiconductor device, and Figures 23B, 23C, 23D, and 23E illustrate sequential manufacturing methods for manufacturing a semiconductor device according to embodiments of the present disclosure. A semiconductor substrate or other suitable substrate is provided to be patterned to form integrated circuits thereon. In some embodiments, the semiconductor substrate comprises silicon. Alternatively or additionally, the semiconductor substrate comprises germanium, silicon germanium, or other suitable semiconductor materials, such as group III-V semiconductor materials. In S910 of Figure 23A, a target layer 115 to be patterned is formed over the semiconductor substrate 110. In some embodiments, the target layer 115 is a semiconductor substrate. In some embodiments, the target layer 115 includes a conductive layer, such as a metal layer or a polycrystalline layer; a dielectric layer, such as silicon oxide, silicon nitride, SiON, SiOC, SiOCN, SiCN, hafnium oxide, or aluminum oxide; or a semiconductor layer, such as an epitaxially formed semiconductor layer. In some embodiments, the target layer 115 is formed over an underlying structure, such as an isolation structure, transistor, or wiring. At S920, a photoresist layer 120 is formed over the target layer, as illustrated in Figure 23B. The photoresist layer 120 is sensitive to radiation from the exposed radiation source during subsequent optical lithography exposure operations. In this embodiment, the photoresist layer 120 is sensitive to EUV light used in the optical lithography exposure operation. The photoresist layer 120 may be formed over the target layer 115 by spin coating or other suitable techniques. The coated photoresist layer may be further baked to remove solvent from the photoresist layer. At S930, the photoresist layer 120 is patterned in the optical lithography exposure apparatus 165 using the thin film / mask structure 160 as described above, as illustrated in Figure 23C. During the optical lithography exposure operation, an integrated circuit (IC) design pattern defined on the photomask 60 is imaged onto the photoresist layer 120 to form a potential pattern thereon. Patterning of the photoresist layer further includes developing the exposed photoresist layer to form a patterned photoresist layer with one or more openings 125. In one embodiment where the photoresist layer is a positive-tone photoresist layer, the exposed portion of the photoresist layer is removed during the development operation. Patterning of the photoresist layer may further include other operations, such as various baking steps at different stages. For example, a post-exposure-baking (PEB) process may be performed after the optical lithography exposure operation and before the development operation.

[0071] At S940, the target layer 115 is patterned using a patterned photoresist layer 120 as an etch mask, as illustrated in Figure 23D. In some embodiments, patterning the target layer includes etching the target layer using the patterned photoresist layer as an etch mask. Several portions of the target layer exposed within openings in the patterned photoresist layer are etched, while the remaining portions are protected from etching. Alternatively, the patterned photoresist layer may be removed by wet stripping or plasma ashing, as illustrated in Figure 23E.

[0072] Other embodiments include other operations before, during, or after the above operations. In some embodiments, the disclosed method includes forming a fin field effect transistor (FinFET) structure. In some embodiments, a plurality of fins are formed on a semiconductor substrate. Such embodiments further include: etching the substrate through an opening of a patterned hard mask to form trenches in the substrate; filling the trenches with a dielectric material; performing a chemical mechanical polishing (CMP) process to form shallow trench isolation (STI) features; and epitaxially growing the STI structure or recessing the STI structure to form fin-like operational regions. In some embodiments, one or more gate electrodes are formed on the substrate. Some embodiments include forming gate spacers, doped source / drain regions, and contacts with gate / source / drain features. In other embodiments, the target pattern is formed as a metal wiring in a multilayer interconnect structure. For example, metal interconnects can be formed in an inter-layer dielectric (ILD) layer of a substrate, which has been etched to form a plurality of trenches. The trenches can be filled with a conductive material such as a metal; and the conductive material can be polished using a process such as chemical mechanical planarization (CMP) to expose the patterned ILD layer, thereby forming the metal interconnects within the ILD layer. The above are non-limiting examples of devices / structures that can be fabricated and / or modified using the methods described herein.

[0073] In some embodiments, according to embodiments of the present disclosure, active elements such as diodes, field-effect transistors (FETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary metal-oxide-semiconductor (CMOS) transistors, bipolar transistors, high-voltage transistors, high-frequency transistors, thin-film FETs, FinFETs, gate all around FETs (GAA FETs), other three-dimensional (3D) FETs, other memory cells, and combinations thereof are formed.

[0074] In the foregoing embodiments, the thin film is subjected to Joule heating to resist and remove contaminants, form nanotube bundles, and smooth wrinkles in the film. The thin film according to the embodiments of this disclosure provides higher strength, lower contamination, increased etch resistance, and higher EUV transmittance compared to conventional thin films. As explained above, the embodiments of this disclosure improve the chemical and mechanical properties of the thin film nanotube membrane.

[0075] It should be understood that not all advantages need to be discussed herein, no particular advantage is claimed for all embodiments or instances, and other embodiments or instances may offer different advantages.

[0076] One embodiment of this disclosure is a method for manufacturing a semiconductor device, comprising heating a thin film disposed above a photomask. Photochemical radiation is directed through the thin film to selectively expose a photoresist layer on a substrate. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. In one embodiment, the heating is Joule heating. In one embodiment, the thin film comprises a layer including a plurality of nanotubes disposed above a frame. In one embodiment, the frame includes a plurality of conductive electrodes. In one embodiment, heating the thin film includes applying a current to the plurality of conductive electrodes. In one embodiment, the plurality of conductive electrodes includes one or more first electrodes disposed on a first side of one of the frames and one or more second electrodes disposed on a second opposing side of one of the frames. In one embodiment, the plurality of conductive electrodes includes one or more electrodes disposed on each side of the frame. In one embodiment, a voltage of 5 V to 500 V is applied to the plurality of conductive electrodes. In one embodiment, the thin film is heated to a temperature ranging from 500 °C to 2000 °C. In one embodiment, the thin film is heated while photochemical radiation is directed through the thin film.

[0077] Another embodiment of this disclosure is a method for manufacturing a semiconductor device, comprising selectively exposing a photoresist layer disposed on a substrate to photochemical radiation. The photochemical radiation passes through a thin film disposed above a photomask and is reflected from the photomask. A current is applied to the thin film to heat it, while photochemical radiation passes through the film. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. In one embodiment, the thin film includes a membrane comprising a plurality of nanotubes disposed above a frame, wherein the frame includes a plurality of conductive nanotubes. In one embodiment, the plurality of nanotubes include carbon nanotubes. In one embodiment, the frame includes one or more conductive electrodes disposed on opposite sides of the frame. In one embodiment, the thin film is heated to a temperature ranging from 500°C to 2000°C. In one embodiment, the photochemical radiation is extreme ultraviolet radiation.

[0078] Another embodiment of this disclosure is a method of manufacturing a semiconductor device, the method comprising placing a thin film / photomask structure in an optical lithography apparatus. The thin film / photomask structure includes a thin film disposed above a photomask. The thin film is heated by applying a current to the photomask structure via electrodes on a frame of the thin film. Photochemical radiation is guided from the photomask through the thin film to selectively expose a photoresist layer disposed on a substrate. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. In one embodiment, the thin film includes a membrane comprising a plurality of carbon nanotubes disposed above a frame. In one embodiment, the thin film is heated to a temperature ranging from 500 °C to 2000 °C. In one embodiment, the photochemical radiation is extreme ultraviolet radiation.

[0079] Another embodiment of this disclosure is a thin film comprising a transparent conductive film disposed above a frame. The frame includes two or more conductive electrodes disposed above the frame. In one embodiment, one or more conductive electrodes are disposed on opposite sides of the frame. In one embodiment, the transparent conductive film comprises a plurality of nanotubes. In one embodiment, the plurality of nanotubes comprises carbon nanotubes. In one embodiment, the plurality of nanotubes comprises multi-walled nanotubes. In one embodiment, the transparent conductive film allows extreme ultraviolet radiation to pass through.

[0080] Another embodiment of this disclosure is a thin film having a membrane comprising a plurality of nanotubes disposed above a frame. The frame includes one or more conductive electrodes disposed on opposite sides of the frame. In one embodiment, the frame is a rectangular frame, and the rectangular frame includes one or more conductive electrodes disposed on each side of the frame. In one embodiment, the plurality of nanotubes comprises carbon nanotubes. In one embodiment, the plurality of nanotubes comprises multi-walled nanotubes. In one embodiment, the frame is a rectangular frame, and one or more conductive electrodes are disposed on each side of the frame. In one embodiment, the frame comprises one or more layers of crystalline silicon, polycrystalline silicon, silicon oxide, silicon nitride, alumina, or ceramic. In one embodiment, the surfaces of the plurality of nanotubes comprise crystalline carbon. In one embodiment, the conductive electrodes comprise copper, gold, nickel, silver, or alloys thereof. In one embodiment, the conductive electrodes are disposed between the nanotubes and the frame. In one embodiment, the thin film includes conductive leads connected to each conductive electrode.

[0081] Another embodiment of this disclosure is a thin film comprising a carbon nanotube layer disposed above a frame. Two or more electrodes are disposed between the frame and the carbon nanotube layer. A first electrode is disposed on a first side of the carbon nanotube layer, and a second electrode is disposed along the length or width of the carbon nanotube layer on a second opposing side of the carbon nanotube layer. Conductive leads extend from each electrode. In one embodiment, the carbon nanotube layer comprises a plurality of carbon nanotube bundles, wherein the carbon nanotubes in each carbon nanotube bundle are connected to form a seamless graphite structure. In one embodiment, the carbon nanotube layer comprises multi-walled carbon nanotubes. In one embodiment, the frame is made of crystalline silicon, polycrystalline silicon, silicon oxide, silicon nitride, alumina, or ceramic. In one embodiment, the conductive electrodes comprise graphite or a metal selected from the group consisting of copper, gold, nickel, silver, or alloys thereof.

[0082] Another embodiment of this disclosure is a thin film / photomask structure, which includes a thin film attached to a photomask. The thin film includes a non-conductive frame, two or more electrodes disposed above the non-conductive frame, and a nanotube layer disposed above the non-conductive frame and the two or more electrodes. A first electrode is disposed on a first side of the nanotube layer, and a second electrode is disposed along the length or width of the nanotube layer on a second opposing side of the nanotube layer. In one embodiment, the photomask is a reflective photomask with a patterned surface, and the thin film is disposed above the patterned surface of the photomask. In one embodiment, the non-conductive frame is made of crystalline silicon, polycrystalline silicon, silicon oxide, silicon nitride, aluminum oxide, or ceramic. In one embodiment, the thin film frame is attached to the photomask via an adhesive. In one embodiment, the nanotube layer includes multi-walled nanotubes.

[0083] The foregoing summarizes the features of several embodiments or examples, enabling those skilled in the art to better understand the nature of this disclosure. Those skilled in the art should understand that this disclosure can be used as a basis for designing or modifying other processes and structures for implementing the embodiments or examples introduced herein and / or achieving the same benefits. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that such equivalent constructions can be modified, replaced, and substituted in various ways without departing from the spirit and scope of this disclosure. [Simplified Explanation of the Diagram]

[0004] The present disclosure is best understood by reading it in conjunction with the accompanying drawings from the following detailed description. Please note that, according to industry standard practice, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily enlarged or reduced for clarity of explanation. Figures 1A and 1B illustrate a thin film for an EUV photomask according to an embodiment of the present disclosure. Figures 2A, 2B, 2C, and 2D illustrate various views of a multi-walled nanotube according to an embodiment of the present disclosure. Figures 3A, 3B, and 3C illustrate the manufacturing process of a mesh film according to an embodiment of the present disclosure. Figure 3D illustrates the manufacturing process of the mesh film, and Figure 3E illustrates the flow chart according to an embodiment of the present disclosure. Figures 4A and 4B illustrate cross-sectional and plan (top) views of one of the various stages of manufacturing a thin film for an EUV photomask according to an embodiment of the present disclosure. Figures 5A and 5B illustrate cross-sectional and plan (top) views of one of the various stages for manufacturing a thin film of an EUV photomask according to an embodiment of the present disclosure. Figures 6A and 6B illustrate cross-sectional and plan (top) views of one of the various stages for manufacturing a thin film of an EUV photomask according to an embodiment of the present disclosure. Figures 7A and 7B illustrate flowcharts for manufacturing a thin film / photomask structure according to an embodiment of the present disclosure. Figures 8A and 8B illustrate schematic diagrams of a thin film according to an embodiment of the present disclosure. Figures 9A, 9B, 9C, and 9D illustrate schematic diagrams of a method for manufacturing a thin film according to an embodiment of the present disclosure. Figure 9E illustrates a cross-sectional view of a thin film according to an embodiment of the present disclosure. Figures 10A, 10B, 10C, and 10D illustrate schematic diagrams of a method for manufacturing a thin film according to an embodiment of the present disclosure. Figure 10E illustrates a cross-sectional view of a thin film according to an embodiment of the present disclosure. Figures 11A, 11B, and 11C illustrate schematic diagrams of a method for manufacturing a thin film according to an embodiment of the present disclosure. Figure 11D illustrates a cross-sectional view of a thin film according to an embodiment of the present disclosure. Figures 12A and 12B illustrate plan views of a thin film frame with conductive electrodes according to an embodiment of the present disclosure. Figure 12C is a cross-sectional view of a thin film according to an embodiment of the present disclosure. Figures 13A and 13B illustrate plan views of a thin film frame with conductive electrodes according to an embodiment of the present disclosure. Figures 13C and 13D are cross-sectional views of a thin film according to an embodiment of the present disclosure. Figure 13E illustrates a plan view of a thin film frame with conductive electrodes according to an embodiment of the present disclosure. Figure 14 illustrates a schematic diagram of a thin film / photomask structure according to an embodiment of the present disclosure. Figures 15A, 15B, and 15C illustrate flowcharts for manufacturing a semiconductor device according to an embodiment of the present disclosure. Figure 16 illustrates a schematic diagram of the formation of an illustrated nanotube bundle according to an embodiment of the present disclosure. Figure 17 illustrates a schematic diagram of the removal or conversion of amorphous carbon according to an embodiment of this disclosure.Figures 18A, 18B, 18C, 18D, and 18E illustrate various views of removing residual catalyst and forming nanotube bundles according to embodiments of the present disclosure. Figure 19 illustrates a schematic diagram of removing contaminants from a thin film according to an embodiment of the present disclosure. Figure 20 illustrates a schematic diagram of decomposing contaminants from a thin film according to an embodiment of the present disclosure. Figures 21A and 21B illustrate schematic diagrams of removing wrinkles from a nanotube film according to an embodiment of the present disclosure. Figures 22A and 22B are diagrams of a controller according to some embodiments of the present disclosure. Figure 23A illustrates a flowchart of a method for manufacturing a semiconductor device, and Figures 23B, 23C, 23D, and 23E illustrate sequential manufacturing operations of the method for manufacturing a semiconductor device according to an embodiment of the present disclosure. [Biomaterial Storage]

[0085] Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None.

Claims

1. A method for manufacturing a semiconductor device, comprising the following steps: heating a thin film disposed above a photomask, wherein the thin film includes a membrane containing a plurality of nanotubes disposed above a frame, wherein the frame includes one or more conductive electrodes disposed on a plurality of opposing sides of the frame; guiding photochemical radiation through the thin film to selectively expose a photoresist layer on a substrate; and developing the selectively exposed photoresist layer to form a pattern in the photoresist layer.

2. The method as described in claim 1, wherein the heating step is a Joule heating step.

3. The method as described in claim 1, wherein the thin film is heated while the photochemical radiation is directed through the thin film.

4. The method as described in claim 1, wherein the step of heating the thin film comprises the step of applying a current to the conductive electrodes.

5. A method for manufacturing a semiconductor device, comprising the steps of: selectively exposing a photoresist layer disposed on a substrate to photochemical radiation, wherein the photochemical radiation passes through a thin film disposed above a photomask and is reflected from the photomask, wherein the thin film includes a film comprising a plurality of nanotubes disposed above a frame, wherein the frame includes one or more conductive electrodes disposed on a plurality of opposing sides of the frame; applying a current to the thin film to heat the thin film while the photochemical radiation passes through the thin film; and developing the selectively exposed photoresist layer to form a pattern in the photoresist layer.

6. The method as described in claim 5, wherein the nanotubes comprise a plurality of carbon nanotubes.

7. The method as described in claim 5, wherein the thin film is heated to a temperature ranging from 500 °C to 2000 °C.

8. The method as described in claim 5, wherein the photochemical radiation is extreme ultraviolet radiation.

9. A thin film comprising: a transparent conductive film disposed above a frame, wherein the frame includes two or more conductive electrodes disposed on the frame, and wherein one or more conductive electrodes are disposed on a plurality of opposite sides of the frame.

10. The thin film as claimed in claim 9, wherein the transparent conductive film comprises a plurality of nanotubes.

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