Semiconductor device

Abstract

A semiconductor device is provided. The semiconductor device includes a substrate, a first well region, a second well region, a gate dielectric layer, a gate electrode, a source doped region, and a drain doped region. The substrate has a first conductivity type. The first well region is disposed in the substrate. The second well region is disposed in the substrate and adjacent to the first well region. The gate dielectric layer is disposed on the first well region and the second well region. The gate electrode is disposed on the gate dielectric layer. The source doped region is disposed in the first well region. The drain doped region is disposed in the second well region. The thickness of the gate dielectric layer located in the second well region is greater than the thickness of the gate dielectric layer located in the first well region.

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