Electrostatic chuck with protective coating and method of making the same

Abstract

As described herein, an electrostatic chuck may comprise at least: a first layer; a second layer comprising an organic material; an encapsulating coating; and a third layer. The second layer is located between the first and third layers such that at least a portion of the second layer is uncovered. The encapsulating coating covers at least that uncovered portion of the second layer. The encapsulating coating may be formed by atomic layer deposition or by chemical vapor deposition such that it at least encapsulates the uncovered portion of the second layer.

Description

Technical Field

[0001] This invention relates to an electrostatic chuck with a protective coating and related methods. Prior Technology

[0002] Electrostatic chucks are high-voltage electrical devices used in semiconductor manufacturing processes. During use, the back side of a substrate (such as a semiconductor wafer) is held to the surface of the chuck by electrostatic force, allowing the wafer to contact a dielectric layer of the chuck. During use, the electrostatic chuck can be exposed to various environments, including oxidizing environments. Summary of the Invention

[0003] Some embodiments relate to an electrostatic chuck. In some embodiments, the electrostatic chuck includes a first layer. In some embodiments, the electrostatic chuck includes a second layer comprising an organic material. In some embodiments, the electrostatic chuck includes an encapsulating coating. In some embodiments, the electrostatic chuck includes a third layer. In some embodiments, the second layer is located between the first layer and the third layer such that at least a portion of the second layer is not covered by the first layer and the third layer. In some embodiments, the encapsulating coating covers at least the portion of the second layer not covered by the first layer and the third layer.

[0004] Some embodiments relate to an apparatus. In some embodiments, the apparatus includes an electrostatic chuck. In some embodiments, the electrostatic chuck includes a first layer. In some embodiments, the electrostatic chuck includes a second layer comprising an organic material. In some embodiments, the electrostatic chuck includes a third layer. In some embodiments, the electrostatic chuck includes an encapsulating coating. In some embodiments, the second layer is located between the first layer and the third layer such that at least a portion of the second layer is not covered by the first layer and the third layer. In some embodiments, the encapsulating coating covers at least one portion of the second layer not covered by the first layer and the third layer as a conformal film.

[0005] Some embodiments relate to a method. In some embodiments, the method includes obtaining an electrostatic chuck. In some embodiments, the method includes placing an electrostatic chuck in a chamber of a deposition tool. In some embodiments, the electrostatic chuck includes a first layer. In some embodiments, the electrostatic chuck includes a second layer comprising an organic material. In some embodiments, the electrostatic chuck includes a third layer. In some embodiments, the second layer is located between the first layer and the third layer such that at least a portion of the second layer is not covered by the first layer and the third layer. In some embodiments, the method includes forming a vapor deposition layer on at least the portion of the second layer not covered by the first layer and the third layer. Simple Explanation of the Diagram

[0006] Embodiments of the present invention are described herein by way of example only with reference to the accompanying drawings. Detailed reference is now made to the drawings, and it should be emphasized that the illustrated embodiments are for illustrative purposes and for illustrating discussions of embodiments of the present invention. In this regard, the description taken in conjunction with the drawings will enable those skilled in the art to understand how embodiments of the present invention can be practiced.

[0007] Figure 1 is a cross-sectional side view of one of the devices according to one of some embodiments.

[0008] Figure 2 is a cross-sectional side view of one of the devices according to one of some embodiments.

[0009] Figure 3 is a cross-sectional side view of a portion of the device in Figure 2 according to some embodiments.

[0010] Figure 4 is a cross-sectional side view of one of the devices according to one of some embodiments.

[0011] Figure 5 is a cross-sectional side view of one of the devices according to one of some embodiments.

[0012] Figure 6 is a cross-sectional side view of one of the devices according to one of some embodiments.

[0013] Figure 7 is a non-limiting example of a graph illustrating the change in chemical composition at a device according to one of some embodiments.

[0014] Figure 8 is a flowchart of one method for forming a vapor deposition layer on an electrostatic chuck according to some embodiments. Implementation

[0015] Various embodiments of the present invention relate to apparatus and devices for an electrostatic chuck. The electrostatic chuck may have a body constructed of one or more layers. Each layer may contain one or more components. In some embodiments, the electrostatic chuck includes at least one layer comprising (but not limited to) a dielectric layer, an electrode layer, a bonding layer, an adhesive layer, an electrode circuit layer, an insulating layer, a heating circuit layer, an electrical isolation layer, or any combination thereof. In some embodiments, the electrostatic chuck may include a plurality of layers. In some embodiments, the electrostatic chuck may include at least one component comprising (but not limited to) an electrode contact pin, a heating contact pin, an electrical conductor, a heating element, a sensor, other components, or any combination thereof. In some embodiments, at least one layer of the electrostatic chuck may contain an organic material, such as (e.g., but not limited to) a polymeric material. In some embodiments, at least one layer containing an organic material may be a thermoplastic made of a polymeric material. The electrostatic chuck may include an encapsulating coating that acts as a vapor deposition layer, as will be further described herein.

[0016] The polymeric material may contain (but is not limited to) at least one of the following: acrylate polymers, polyolefins, polyamides, polyethers, polycarbonates, polyurethanes, vinyl polymers, fluoropolymers, other types of polymers, or any combination thereof. In some embodiments, the polymeric material may contain (but is not limited to) at least one of the following: fluorinated ethylene propylene (FEP), fluoropolymers, high-density polyethylene (HDPE), low-density polyethylene (LDPE), medium-density polyethylene (MDPE), perfluoroalkoxyalkylene (PFA), polybutene (PB), poly(butyl acrylate) (PBA), poly(ethyl acrylate) (PEA), polyacrylonitrile (PAN), polyaryletherketone (PAEK), polybutadiene, polybutylene adipate (PBAT), polybutylene succinate (PBS), polybutylene terephthalate (PBT), polychlorotrifluoroethylene (PCTFE or PTFCE), polyethers Imine, polyethylene (PE), polyetheretherketone (PEEK), polyetherketoneketone (PEKK), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyglycolic acid (PGA), polystyrene (PPSU), polymethylpentene (PMP), polypropylene (PP), nylon, polyoxobutane (POX), polyoxymethylene (POM), polyphenylene ether (PPE), polypropylene glycol (PPG), polystyrene (PS), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polyvinyl fluoride (PVF), polyvinylcarbazole (PVK), polyvinylidene chloride (PVDC), polyvinylidene fluoride (PVDF), or any combination thereof.

[0017] An electrostatic chuck may comprise a plurality of layers. At least one layer of the electrostatic chuck may comprise an organic material. The at least one layer comprising an organic material may be disposed within a respective layer of the electrostatic chuck such that at least a portion of the layer comprising the organic material is exposed to, or, if uncovered, exposed to, the external environment. That is, the at least one layer comprising an organic material may be disposed adjacent to another layer of the electrostatic chuck or may be disposed between two or more other layers of the electrostatic chuck such that at least a portion of the surface of the at least one layer comprising the organic material not covered by another layer of the electrostatic chuck is exposed to the external environment. For example, the layer comprising the organic material may be an electrically insulating layer positioned adjacent to a ceramic insulating layer, and one or more sides of the layer comprising the organic material not covered by the ceramic insulating layer may be exposed to the external environment. In another example, the layer comprising the organic material may be a bonding layer located between a dielectric layer and an insulating layer, and at least one sidewall of the layer comprising the organic material may be exposed to the external environment. It should be understood that, without departing from the scope of the invention, the at least one layer comprising the organic material may comprise one or more other functional components.

[0018] Electrostatic chucks can be used in various types of environments. Therefore, electrostatic chucks can be exposed to different environmental conditions. When an electrostatic chuck is used in or exposed to oxidizing atmospheres (such as ozone treatment or H2 plasma exposure), the organic material forming at least one layer of the electrostatic chuck can age or otherwise be damaged, which can lead to premature failure of the electrostatic chuck. The surface of an electrostatic chuck formed of or including organic material may be located in areas of the electrostatic chuck that are difficult to access (such as structures with a high aspect ratio). For example, at least one layer containing organic material may be sandwiched between two other layers or components. In this regard, at least one layer containing organic material may, for example, expose one side of at least one layer not covered by adjacent components or layers to harmful species (such as ozone or H2). Harmful species can thereby cause damage to the organic material of at least one layer of the electrostatic chuck at portions between adjacent components, which can lead to premature wear, aging, and failure of the electrostatic chuck.

[0019] An electrostatic chuck includes an encapsulating coating formed by vapor deposition. The encapsulating coating protects the surface of at least one layer of an electrostatic chuck containing or formed of organic materials from potential aging or damage, particularly from exposure to hazardous materials such as (e.g., but not limited to) ozone, H2 plasma, etc. When applied to one or more portions of the electrostatic chuck, the encapsulating coating forms a highly conformal coating or portion of the coating to seal or encapsulate organic materials or similar easily aging materials, thereby extending the durability and / or lifespan of the electrostatic chuck. An encapsulating coating is provided to cover at least a portion of at least one component of an electrostatic chuck containing organic materials. Once a vapor-deposited layer is formed on one or more portions of the surface of the electrostatic chuck using the encapsulating coating, the encapsulating coating encapsulates at least a portion of at least one layer forming the surface of the electrostatic chuck and protects it from exposure to hazardous species in a hazardous environment. That is, the encapsulation coating forms a vapor deposition layer to cover at least one or more portions of the surface of an electrostatic chuck containing at least one component, the at least one component comprising an organic material and not covered by another component or layer of the electrostatic chuck.

[0020] In some embodiments, at least one of the layers of the electrostatic chuck may comprise an organic material, and an encapsulating coating may be applied to the electrostatic chuck to form a vapor-deposited layer covering at least a portion of the electrostatic chuck. In some embodiments, the vapor-deposited layer encapsulates at least a portion of the surface of the electrostatic chuck comprising at least one layer, the at least one layer comprising an organic material originally exposed to the external environment. In other embodiments, two or more layers of the electrostatic chuck may comprise an organic material, and a vapor-deposited layer may be applied as one or more portions to the electrostatic chuck to cover portions of two or more layers forming a surface of the electrostatic chuck, the vapor-deposited layer encapsulating at least a portion of the surface of the electrostatic chuck formed by the respective layers, the respective layers comprising an organic material originally exposed to the external environment. In other embodiments, an encapsulating coating may be applied to an electrostatic chuck to form a vapor-deposited layer that substantially covers one of the outer surfaces of the electrostatic chuck, thereby encapsulating the surface of the electrostatic chuck (including (but not limited to) at least one of the following: a layer containing organic material, other layers, a surface-extending component of one of the layers, or any combination thereof), thereby protecting the electrostatic chuck or one or more portions thereof from harmful materials in a harmful environment to which the electrostatic chuck would otherwise be exposed in the external environment.

[0021] In some embodiments, an encapsulating coating covers a surface of an electrostatic chuck comprising an organic material, or at least a portion thereof. In some embodiments, the encapsulating coating may cover a high aspect ratio structure having a surface comprising an organic material. Non-limiting examples of a high aspect ratio structure include (e.g., but not limited to) at least one of the following: a structure defining an air chamber, a structure defining a trench, a structure defining a well, a structure defining a pore, a structure defining an opening, a structure defining a channel, a structure defining a cavity (e.g., defining a partially enclosed region of a cavity), a flat surface, a non-flat surface, or any combination thereof. As used herein, the term "high aspect ratio" refers to a structure having a ratio of two dimensions, wherein the width across the structure is much larger than the height of the structure. Thus, an electrostatic chuck has a high aspect ratio when the width across each layer of an electrostatic chuck is much larger than the height defined by the plurality of layers. Non-limiting examples of dimensions include (for example, but not limited to) at least one of the following: a length, a width, a height, a depth, a diameter, a circumference, or any combination thereof.

[0022] In some embodiments, the surface containing organic material is located in a structure having an aspect ratio of any range or subrange between 2:1 and 1000:1 or the like. For example, the surface containing organic material is located in a structure having one of the following aspect ratios: at least 2:1, at least 3:1, at least 4:1, at least 5:1, at least 6:1, at least 7:1, at least 8:1, at least 9:1, at least 10:1, at least 15:1, at least 20:1, at least 25:1, at least 30:1, at least 35:1, at least 40:1, at least 45:1, at least 50:1, at least 55:1, at least 60:1, at least 65:1, at least 70:1, at least 75:1, at least 80:1, at least 85:1, at least 90:1, at least 95:1, at least 100:1, at least 200:1, at least 300:1, at least 400:1, at least 500:1, at least 600:1, at least 700:1, at least 800:1, at least 900:1 to 1000:1 and / or any range or subrange between these.

[0023] An encapsulating coating forming a vapor deposition layer can be formed on an electrostatic chuck using a vapor deposition process to create a highly conformal coating or coating portion at the electrostatic chuck, sealing or encapsulating at least one layer of organic material or similar easily aging material, thereby extending the durability and / or lifespan of the electrostatic chuck. The encapsulating coating can be a uniform, dense layer encapsulating one or more portions of the surface of the electrostatic chuck, configured to have virtually no defects varying according to the deposition process. The encapsulating coating can be formed on the unprotected surface of the electrostatic chuck conformally to the surface of the underlying component. The encapsulating coating can have a substantially uniform thickness across one of the coated portions of the electrostatic chuck. In some embodiments, the encapsulating coating can have a substantially equal thickness across one of the coated portions, varying according to the deposition process. It should be understood that the encapsulating coating is not intended to be limited to forming on a flat surface, but can be formed on any surface having a plurality of different geometries, including those capable of coating complex geometries with high aspect ratios. For example, vapor-deposited layers can be suitable for coating geometries with high aspect ratios, including (but not limited to) small-diameter holes, deep recesses, spaces, gaps, and other geometries that can form the surface of components containing organic materials or can be located between components.

[0024] An encapsulating coating can cover all or at least a portion of a surface of an electrostatic chuck containing an organic material that may be exposed to the external environment of the chuck. In some embodiments, the electrostatic chuck includes a first layer, a second layer, a third layer, and an encapsulating coating, a second layer located between the first and third layers and containing an organic material, and the encapsulating coating forming a vapor-deposited layer covering at least a portion of the electrostatic chuck such that the encapsulating coating completely covers the second layer not covered by the first and third layers. In some embodiments, the encapsulating coating forming the vapor-deposited layer completely covers an outer surface of the electrostatic chuck. For example, in some embodiments, the encapsulating coating forming the vapor-deposited layer covers at least one of: a top surface of the electrostatic chuck, a bottom surface of the electrostatic chuck, a side surface of the electrostatic chuck, one or more portions thereof, or any combination thereof. In some embodiments, the vapor-deposited layer covers any range or subrange between 1% and 99% of an outer surface of the electrostatic chuck. In some embodiments, the vapor-deposited layer covers 1% to 90%, 1% to 80%, 1% to 70%, 1% to 60%, 1% to 50%, 1% to 40%, 1% to 30%, 1% to 20%, 1% to 10%, 10% to 99%, 20% to 99%, 30% to 99%, 40% to 99%, 50% to 99%, 60% to 99%, 70% to 99%, 80% to 99%, or 90% to 99%. In some embodiments, the encapsulating coating forming the vapor-deposited layer is in direct contact with the surface containing the organic material.

[0025] The encapsulation coating that forms the vapor-deposited layer may have a thickness of any range or subrange between 10 nm and 300 nm or the like. In some embodiments, the vapor-deposited layer may have one of the following thicknesses: 10 nm to 300 nm, 20 nm to 300 nm, 30 nm to 300 nm, 40 nm to 300 nm, 50 nm to 300 nm, 75 nm to 300 nm, 100 nm to 300 nm, 150 nm to 300 nm, 200 nm to 300 nm, 250 nm to 300 nm, 10 nm to 250 nm, 20 nm to 250 nm, 30 nm to 250 nm, 40 nm to 250 nm, 50 nm to 250 nm, 75 nm to 250 nm, 100 nm to 250 nm, 150 nm to 250 nm, 200 nm to 250 nm, 10 nm to 200 nm, 20 nm to 200 nm, 30 nm to 200 nm, 40 nm to 200 nm, 50 nm to 200 nm, 75 nm to 200 nm. nm, 100 nm to 200 nm, 150 nm to 200 nm, 10 nm to 150 nm, 20 nm to 150 nm, 30 nm to 150 nm, 40 nm to 150 nm, 50 nm to 150 nm, 75 nm to 150 nm, 100 nm to 150 nm, 10 nm to 100 nm, 20 nm to 100 nm, 30 nm to 100 nm, 40 nm to 100 nm, 50 nm to 100 nm, 75 nm to 100 nm, 10 nm to 75 nm, 20 nm to 75 nm, 30 nm to 75 nm, 40 nm to 75 nm, 50 nm to 75 nm, 10 nm to 50 nm, 20 nm to 50 nm, 30 nm to 50 nm, or 40 nm to 50 nm. In some embodiments, the vapor-deposited layer has a thickness of one of 10 nm to 300 nm. In some embodiments, the vapor-deposited layer has a thickness of 10 nm to 200 nm. In some embodiments, the vapor-deposited layer has a thickness of 10 nm to 250 nm. In some embodiments, the vapor-deposited layer has a thickness of 30 nm to 100 nm.

[0026] In some embodiments, the encapsulating coating forming the vapor-deposited layer is capable of withstanding thickness variations in response to exposure of the electrostatic chuck to a material harmful to the electrostatic chuck's organic or other materials. In some embodiments, when the encapsulating coating is exposed to a harmful material comprising, for example, ozone, plasma, or any combination thereof, at a temperature of 10°C to 130°C for a duration of 6 hours to 24 hours, the thickness variation of the electrostatic chuck before and after exposure is 10% or less, 9% or less, 8% or less, 7% or less, 6% or less, 5% or less, 4% or less, 3% or less, 2% or less, or 1% or less. In some embodiments, when the electrostatic chuck is exposed to at least one of ozone, plasma, or any combination thereof at a temperature of 10°C to 130°C for a duration of 6 hours to 24 hours, the thickness change of the electrostatic chuck before and after exposure is 0.01% to 10%, 0.01% to 9%, 0.01% to 8%, 0.01% to 7%, 0.01% to 6%, 0.01% to 5%, 0.01% to 4%, 0.01% to 3%, 0.01% to 2%, 0.01% to 1%, 0.1% to 10%, 1% to 10%, 2% to 10%, 3% to 10%, 4% to 10%, 5% to 10%, 6% to 10%, 7% to 10%, 8% to 10%, or 9% to 10%. For example, when an electrostatic chuck is exposed to at least one of ozone atmosphere, plasma, or other harmful materials that can damage organic materials at a temperature of 100°C for a duration of 6 to 20 hours, the thickness variation of the encapsulation coating is 1% or less.

[0027] In some embodiments, when the electrostatic chuck is exposed to at least one of ozone, plasma, or any combination thereof at a temperature of 10°C to 130°C for a duration of 6 hours to 24 hours, the change in the metallic composition of the encapsulation coating before and after exposure is 10% or less, 9% or less, 8% or less, 7% or less, 6% or less, 5% or less, 4% or less, 3% or less, 2% or less, or 1% or less, as measured by energy-dispersive X-ray spectroscopy. In some embodiments, when the electrostatic chuck is exposed to at least one of ozone, plasma, or any combination thereof at a temperature of 10°C to 130°C for a duration of 6 hours to 24 hours, the change in the metallic composition of the vapor-deposited layer before and after exposure is 0.01% to 10%, 0.01% to 9%, 0.01% to 8%, 0.01% to 7%, 0.01% to 6%, 0.01% to 5%, 0.01% to 4%, 0.01% to 3%, 0.01% to 2%, 0.01% to 1%, 0.1% to 10%, 1% to 10%, 2% to 10%, 3% to 10%, 4% to 10%, 5% to 10%, 6% to 10%, 7% to 10%, 8% to 10%, or 9% to 10%, as measured by energy-dispersive X-ray spectroscopy. For example, when an electrostatic chuck is exposed to at least one of ozone atmosphere, plasma, or other harmful materials that can damage organic materials at a temperature of 100°C for a duration of 6 to 20 hours, the change in the metallic composition of the encapsulation coating is less than 5%.

[0028] It should be understood that the number of layers forming the electrostatic chuck is not intended to be limited and may include one, two, three, four, five, six, or more than six layers, with at least one of the layers containing one or more components according to the invention. It should also be understood that although the electrostatic chuck is described herein as comprising one or more layers and one or more components, this is not intended to be limiting. In some embodiments, after forming the body of the electrostatic chuck, an encapsulation coating may be applied to the electrostatic chuck as a vapor-deposited layer.

[0029] Some embodiments relate to an apparatus. The apparatus includes an electrostatic chuck. In some embodiments, the electrostatic chuck includes at least one of a first layer, a second layer, a third layer, a fourth layer, or any combination thereof. In some embodiments, a second layer is located between the first and third layers. In some embodiments, a third layer is located between the second and fourth layers. In some embodiments, each layer has a top surface, a bottom surface opposite to the top surface, and a side surface extending between the top and bottom surfaces. In some embodiments, at least a portion of the bottom surface of the first layer contacts at least a portion of the top surface of the second layer. In some embodiments, at least a portion of the bottom surface of the second layer contacts at least a portion of the top surface of the third layer. In some embodiments, at least a portion of the bottom surface of the third layer contacts at least a portion of the top surface of the fourth layer.

[0030] The layers of an electrostatic chuck may include a dielectric layer, an adhesive layer, a bonding layer, an insulating layer, an electrical isolation layer, or any combination thereof, and at least one other layer. In some embodiments, the first layer is a dielectric layer. In some embodiments, the second layer is at least one of a bonding layer, an adhesive layer, an electrical isolation layer, or any combination thereof. In some embodiments, the second layer comprises an organic material. In some embodiments, the third layer is an insulating layer (e.g., a supporting ceramic insulating layer). In some embodiments, the fourth layer is an electrical isolation layer (e.g., an encapsulated electrical isolation layer). In some embodiments, the fourth layer comprises an organic material.

[0031] An electrostatic chuck may comprise at least one other layer. At least one other layer may comprise an electrode layer, a heating circuit layer, or any combination thereof, and at least one of other layers. In some embodiments, at least one other layer may be positioned adjacent to at least one layer of the electrostatic chuck. In other embodiments, at least one other layer may be located between two layers of the electrostatic chuck. In still other embodiments, at least one other layer may be embedded within at least one layer of the electrostatic chuck. In some embodiments, at least one other layer may be embedded within at least one layer of an electrostatic chuck comprising an organic material. For example, in some embodiments, at least one other layer may be an electrode layer located between a first layer and a second layer. In other embodiments, at least one other layer may be an electrode layer embedded within a second layer between a first layer and a third layer. In another example, in some embodiments, at least one other layer may be a heating circuit layer located between a third layer and a fourth layer. In other embodiments, at least one other layer may be a heating circuit layer embedded within a fourth layer.

[0032] An electrostatic chuck may include at least one component. In some embodiments, the at least one component may include (but is not limited to) an electrode contact pin, a heating contact pin, other components, or any combination thereof, and other components. In some embodiments, the electrostatic chuck may include at least one electrode contact pin that contacts an electrode layer and extends through at least one of a second, third, fourth, or any combination thereof. In some embodiments, the electrostatic chuck may include at least one heating contact pin that contacts a heating circuit layer located between the third and fourth layers and extends through the third, fourth, or any combination thereof. In some embodiments, the heating contact pin contacts a heating circuit layer and extends through at least the fourth layer.

[0033] The second layer may be located between the first and third layers, such that at least a portion of the second layer is not covered by the first and third layers. In some embodiments, the encapsulating coating forming the vapor deposition layer covers at least a portion of the second layer not covered by the first and third layers. The fourth layer may be located below the third layer, such that at least a portion of the fourth layer is not covered by the third layer. In some embodiments, the encapsulating coating forming the vapor deposition layer may cover at least a portion of the fourth layer not covered by the third layer. In some embodiments, the encapsulating coating may comprise a first portion and a second portion formed on respective portions of the electrostatic chuck, the first portion covering at least a portion of the second layer not covered by the first and third layers and the second portion covering at least a portion of the fourth layer not covered by the third layer. In other embodiments, the encapsulating coating may completely cover one outer surface of the electrostatic chuck formed of one or more layers.

[0034] An electrostatic chuck may have a top surface, a bottom surface opposite the top surface, and at least one sidewall located between the top and bottom surfaces. Additionally, each of the first, second, third, and fourth layers may have a respective top surface, a respective bottom surface opposite the respective top surface, and at least one sidewall of a surface located between the top and bottom surfaces of the corresponding layer. The electrostatic chuck includes an encapsulating coating forming a vapor-deposited layer. In some embodiments, the second layer comprises an organic material, and the encapsulating coating forming the vapor-deposited layer at least completely covers at least one sidewall of the second layer. In some embodiments, the fourth layer comprises an organic material, and the encapsulating coating forming the vapor-deposited layer covers at least one sidewall of the fourth layer. In some embodiments, the encapsulating coating forming the vapor-deposited layer also covers the bottom surface of the fourth layer. The encapsulating coating may further cover other portions of the electrostatic chuck to protect these other portions from aging or damage attributable to exposure to hazardous materials. In some embodiments, the encapsulating coating forming the vapor deposition layer may cover at least one sidewall of the first layer, a top surface of the first layer, at least one sidewall of the third layer, one or more portions of other layers, or any combination thereof, and at least a portion of other components or layers. In some embodiments, the encapsulating coating forming the vapor deposition layer covers at least a portion of the top surface of the first layer. In some embodiments, the vapor deposition layer covers at least a portion of the top of the electrostatic chuck. In some embodiments, the vapor deposition layer covers at least a portion of the side of the electrostatic chuck. In some embodiments, the vapor deposition layer covers at least a portion of the bottom of the electrostatic chuck.

[0035] In some embodiments, an apparatus includes an electrostatic chuck comprising a first layer, a second layer comprising an organic material, a vapor deposition layer, and a third layer, wherein the second layer is located between the first layer and the third layer such that at least a portion of the second layer is not covered by the first layer and the third layer, and the vapor deposition layer covers at least a portion of the second layer not covered by the first layer and the third layer.

[0036] At least one layer of the electrostatic chuck may comprise an organic material. The organic material may comprise (but is not limited to) at least one of the following: acrylate polymers, polyolefins, polyamides, polyethers, polycarbonates, polyurethanes, vinyl polymers, fluoropolymers, other types of polymers, or any combination thereof. In some embodiments, the organic material may comprise (but is not limited to) at least one of the following: fluorinated ethylene propylene (FEP), fluoropolymers, high-density polyethylene (HDPE), low-density polyethylene (LDPE), medium-density polyethylene (MDPE), perfluoroalkoxyalkylene (PFA), polybutene (PB), poly(butyl acrylate) (PBA), poly(ethyl acrylate) (PEA), polyacrylonitrile (PAN), polyaryletherketone (PAEK), polybutadiene, polybutylene adipate terephthalate (PBAT), polybutylene succinate (PBS), polybutylene terephthalate (PBT), polychlorotrifluoroethylene (PCTFE or PTFCE), polyethers The materials include ethylene imine, polyethylene (PE), polyetheretherketone (PEEK), polyetherketoneketone (PEKK), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyglycolic acid (PGA), polystyrene sulfide (PPSU), polymethylpentene (PMP), polypropylene (PP), nylon, polyoxobutane (POX), polyoxymethylene (POM), polyphenylene ether (PPE), polypropylene glycol (PPG), polystyrene (PS), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polyvinyl fluoride (PVF), polyvinylcarbazole (PVK), polyvinylidene chloride (PVDC), polyvinylidene fluoride (PVDF), or any combination thereof. In some embodiments, at least one layer may comprise one or more organic materials as described herein. In other embodiments, the electrostatic chuck may comprise a plurality of layers containing one or more organic materials, including a first layer containing at least one organic material and a second layer containing at least one organic material. In some embodiments, the organic material may be a non-conductive material comprising at least one of fluorinated ethylene propylene (FEP), perfluoroalkoxyalkane (PFA), polytetrafluoroethylene (PTFE), or any combination thereof.

[0037] The first layer of an electrostatic chuck may be a dielectric layer. In some embodiments, the first layer may comprise (but is not limited to) at least one of the following: alumina, zirconium oxide, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium dioxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof. In some embodiments, the first layer comprises a dielectric layer of alumina ceramic.

[0038] The third layer of the electrostatic chuck may be an insulating layer. In some embodiments, the third layer may comprise or may be selected from a group comprising a ceramic material. In some embodiments, the ceramic material may comprise (but is not limited to) at least one of the following: alumina, zirconium oxide, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium dioxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof. In some embodiments, the third layer is an insulating layer comprising alumina ceramic.

[0039] In some embodiments, the portion of the second layer not covered by the first and third layers is at least one sidewall of the second layer forming a portion of the side of the electrostatic chuck, and the encapsulating coating forming the vapor deposition layer can cover at least the portion of the second layer not covered by the first and third layers on the side of the electrostatic chuck. In some embodiments, the encapsulating coating can cover at least one side of the second layer and at least a portion of the first layer, the third layer, or any combination thereof. For example, the encapsulating coating can cover the second coating, at least one side of the first layer adjacent to the second layer, and at least one side of the third layer adjacent to the second layer on the side of the electrostatic chuck.

[0040] In some embodiments, the electrostatic chuck may include at least one of a hole, a trench, a well, a gap, other geometry, or any combination thereof in the portion of the second layer not covered by the first and third layers. In some embodiments, at the portion of the electrostatic chuck on the side where the second layer intersects with at least one of the first and third layers, at least one of a hole, trench, well, gap, other geometry, or any combination thereof may be included. An encapsulating coating may be applied to the electrostatic chuck to form a vapor-deposited layer, wherein the encapsulating layer covers the portion of the second layer not covered by the first and third layers and also covers at least one of a hole, trench, well, gap, other geometry, or any combination thereof, which may be formed between the second layer and at least one of the first and third layers.

[0041] An electrostatic chuck includes an encapsulating coating covering one or more portions of the electrostatic chuck made of an organic material. In some embodiments, the encapsulating coating may be formed using atomic layer deposition (ALD). In other embodiments, the encapsulating coating may be formed using chemical vapor deposition (CVD). In some embodiments, the encapsulating coating may comprise at least one of alumina, yttrium oxide, or a combination of alumina and yttrium oxide. As used herein, the term "atomic layer deposition" refers to a deposition technique based on sequentially exposing two or more precursors (or reactants) to a material, which reacts with the surface of the material or a portion thereof, such that a thin film (e.g., an encapsulating coating) is deposited onto the surface of the material to produce a layered crystalline film of uniform thickness and density. As used herein, the term "chemical vapor deposition" refers to a deposition technique based on exposing a material to one or more precursors (or reactants) that react with the surface of the material or a portion thereof, while operating at least one of atmospheric pressure, low pressure, ultra-high vacuum, sub-atmospheric pressure or any combination thereof to produce a high-quality thin film of uniform thickness and density.

[0042] In some embodiments, the encapsulation coating has a thickness of one to 10 nm to 300 nm. In some embodiments, the encapsulation coating has a thickness of one to 10 nm to 200 nm. In some embodiments, the encapsulation coating has a thickness of one to 30 nm to 100 nm.

[0043] In some embodiments, the second layer contacts the first and third layers.

[0044] In some embodiments, the encapsulation coating forming the vapor deposition layer covers 1% to 99% of one outer surface of the electrostatic chuck.

[0045] In some embodiments, the encapsulation coating forming the vapor-deposited layer encapsulates at least a portion of the second layer not covered by another layer or component of the electrostatic chuck. The encapsulation coating protects the organic material in the second layer from harmful materials including at least one of ozone, plasma, or any combination thereof, which causes aging, chemical composition change, thickness change, or any combination thereof of the organic material.

[0046] In some embodiments, in response to an electrostatic chuck being exposed to a hazardous material having a first temperature for a first period of time, the thickness of one of the encapsulating coatings after exposure is configured to vary by 10% or less.

[0047] In some embodiments, the electrostatic chuck further includes an electrode layer. In some embodiments, the electrode layer is disposed between a first layer and a second layer. In other embodiments, at least a portion of the electrode layer is embedded in the second layer. In some embodiments, the electrode layer includes at least one electrode needle. In some embodiments, at least one electrode needle extends from the electrode layer through the second layer, a third layer, an encapsulation coating forming a vapor deposition layer, or any combination thereof, and at least one of other layers to the bottom of one of the electrostatic chucks.

[0048] In some embodiments, the electrostatic chuck further includes a fourth layer. In some embodiments, a third layer is disposed between the fourth layer and the second layer. In some embodiments, the electrostatic chuck further includes at least one heating element. In some embodiments, at least one heating element is disposed between the third layer and the fourth layer. In other embodiments, at least a portion of the at least one heating element is embedded in the fourth layer. In some embodiments, the at least one heating element includes at least one heating element needle. In some embodiments, the at least one heating element needle extends from the at least one heating element through at least the fourth layer to the bottom of one of the electrostatic chucks.

[0049] In some embodiments, the fourth layer is an isolation layer.

[0050] In some embodiments, the fourth layer may comprise an organic material. The organic material of the fourth layer may comprise (but is not limited to) at least one of the following: acrylate polymers, polyolefins, polyamides, polyethers, polycarbonates, polyurethanes, vinyl polymers, fluoropolymers, other types of polymers, or any combination thereof. In some embodiments, the organic material of the fourth layer may comprise (but is not limited to) at least one of the following: fluorinated ethylene propylene (FEP), fluoropolymers, high-density polyethylene (HDPE), low-density polyethylene (LDPE), medium-density polyethylene (MDPE), perfluoroalkoxyalkylene (PFA), polybutene (PB), poly(butyl acrylate) (PBA), poly(ethyl acrylate) (PEA), polyacrylonitrile (PAN), polyaryletherketone (PAEK), polybutadiene, polybutylene adipate (PBAT), polybutylene succinate (PBS), polybutylene terephthalate (PBT), polychlorotrifluoroethylene (PCTFE or PTFCE). Polyetherimide, polyethylene (PE), polyetheretherketone (PEEK), polyetherketoneketone (PEKK), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyglycolic acid (PGA), polystyrene (PPSU), polymethylpentene (PMP), polypropylene (PP), nylon, polyoxobutane (POX), polyoxymethylene (POM), polyphenylene ether (PPE), polypropylene glycol (PPG), polystyrene (PS), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polyvinyl fluoride (PVF), polyvinylcarbazole (PVK), polyvinylidene chloride (PVDC), polyvinylidene fluoride (PVDF), or any combination thereof.

[0051] In some embodiments, the fourth layer comprises at least one of the following: fluorinated ethylene propylene (FEP), perfluoroalkoxyalkane (PFA), polytetrafluoroethylene (PTFE), polyethylene terephthalate (PET), or any combination thereof.

[0052] Figure 1 is a cross-sectional side view of one of the devices 100 according to one of some embodiments.

[0053] The device 100 includes an electrostatic chuck 102 having a top 104, a bottom 106 opposite to the top 104, and at least one side 108 located between the top 104 and the bottom 106. The electrostatic chuck 102 includes one or more layers. In some embodiments, the electrostatic chuck 102 has a cylindrical shape or a disk shape. Each layer of the electrostatic chuck includes a top surface, a bottom surface opposite to the top surface, and at least one sidewall extending between the top surface and the bottom surface. In some embodiments, at least one layer of the electrostatic chuck 102 has a cylindrical shape or a disk shape.

[0054] According to some embodiments, the electrostatic chuck 102 includes a first layer 110, a second layer 112 including an organic material 114, a third layer 116, and an encapsulation coating 120. The second layer 112 is located between the first layer 110 and the third layer 116, such that at least a portion of the second layer 112 is not covered by the first layer 110 and the third layer 116. Furthermore, the encapsulation coating 120 covers at least a portion of the second layer 112 that is not covered by the first layer 110 and the third layer 116.

[0055] The first layer 110 is positioned adjacent to the top 104 of the electrostatic chuck 102. The first layer 110 may be a dielectric layer. In some embodiments, the first layer 110 may define the top 104 of the electrostatic chuck 102. The first layer 110 may include, be composed of, or be substantially composed of the following materials: alumina, zirconium oxide, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium dioxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof. In some embodiments, the first (dielectric) layer 110 may comprise ceramic alumina. In other embodiments, the first (dielectric) layer 110 may comprise alumina ceramic, be composed of alumina ceramic, or be substantially composed of alumina ceramic.

[0056] The second layer 112 contacts the first layer 110 and the third layer 116. That is, the second layer 112 can be sandwiched between the first layer 110 and the third layer 116, such that one top surface of the second layer 112 contacts one bottom surface of the first layer 110 and one bottom surface of the second layer 112 contacts the top surface of the third layer 116. The second layer 112 can be at least one of an adhesive layer, a bonding layer, an electrode insulating layer, or any combination thereof.

[0057] The second layer 112 may contain at least one organic material 114. The organic material may contain (but is not limited to) at least one of the following: acrylate polymers, polyolefins, polyamides, polyethers, polycarbonates, polyurethanes, vinyl polymers, fluoropolymers, other types of polymers, or any combination thereof. In some embodiments, the organic material may contain (but is not limited to) at least one of the following: fluorinated ethylene propylene (FEP), fluoropolymers, high-density polyethylene (HDPE), low-density polyethylene (LDPE), medium-density polyethylene (MDPE), perfluoroalkoxyalkylene (PFA), polybutene (PB), poly(butyl acrylate) (PBA), poly(ethyl acrylate) (PEA), polyacrylonitrile (PAN), polyaryletherketone (PAEK), polybutadiene, polybutylene adipate (PBAT), polybutylene succinate (PBS), polybutylene terephthalate (PBT), polychlorotrifluoroethylene (PCTFE or PTFCE), polyethers Imine, polyethylene (PE), polyetheretherketone (PEEK), polyetherketoneketone (PEKK), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyglycolic acid (PGA), polystyrene (PPSU), polymethylpentene (PMP), polypropylene (PP), nylon, polyoxobutane (POX), polyoxymethylene (POM), polyphenylene ether (PPE), polypropylene glycol (PPG), polystyrene (PS), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polyvinyl fluoride (PVF), polyvinylcarbazole (PVK), polyvinylidene chloride (PVDC), polyvinylidene fluoride (PVDF), or any combination thereof. Organic material 114 may include (but is not limited to) acrylates, polyolefins, carbamates, epoxy resins, styrene, polyurethane, thiols, polycarbonate (PC), polyether ether ketone (PES), polyether ether ketone (PEEK), polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polytetrafluoroethylene (PTFE), polyimide (PI), polystyrene ether sulfide (PPSU), polytrifluoroethylene chloride (PCTFE or PTFCE), fluorinated ethylene propylene (FEP), perfluoroalkoxyalkane (PFA), or any combination thereof. For example, the second layer 112 may be a bonding layer comprising FEP configured to bond the first layer 110 and the third layer 116 together. In another example, the second layer 112 may be an electrode insulating layer comprising PFA configured to bond the first layer 110 and the third layer 116 together. In some embodiments, the electrostatic chuck 102 may include an electrode layer 132 located between the first layer 110 and the second layer 112. In other embodiments, the second layer 112 may include at least one electrode embedded in the second layer 112, as will be further described herein. In some embodiments, the organic material is a non-conductive material comprising at least one of FEP, PFA, PTFE, other similar organic polymeric materials, or any combination thereof.

[0058] The third layer 116 is positioned opposite the first layer 110 to the second layer 112. In some embodiments, the third layer 116 may be adjacent to the bottom 106 of the electrostatic chuck 102. In other embodiments, the third layer 116 may define the surface of the bottom 106 of the electrostatic chuck 102. The third layer 116 may be formed of a ceramic material to make the third layer 116 an insulating layer. The third layer 116 may contain a material having a dielectric resistivity lower than that of a dielectric layer. In some embodiments, the third layer 116 may contain a ceramic material. In some embodiments, the ceramic material may comprise (but is not limited to) at least one of the following ceramic materials: alumina, zirconium oxide, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium dioxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof. In one exemplary embodiment, the third layer 116 may be a ceramic insulating layer comprising alumina.

[0059] In some embodiments, as depicted in FIG1, the electrostatic chuck 102 includes an encapsulation coating 120. The encapsulation coating 120 encapsulates at least a portion of the electrostatic chuck 102. In some embodiments, the encapsulation coating 120 encapsulates at least a portion of a layer of organic material 114 comprising the electrostatic chuck 102. The encapsulation coating 120 may be formed by vapor deposition to form a layer on one surface of the electrostatic chuck 102. In some embodiments, the encapsulation coating 120 may be a vapor-deposited layer formed using an atomic layer deposition (ALD) process, which forms a coating on at least a portion of a second layer 112 not covered by another layer of the electrostatic chuck 102, thereby encapsulating a portion of the second layer 112 exposed to a hazardous material surrounding the electrostatic chuck 102 and potentially exposed to a hazardous environment. In other embodiments, the encapsulation coating 120 may be a vapor-deposited layer formed using a chemical vapor deposition (CVD) process, which forms a coating on at least a portion of the second layer 112 that is not covered by another layer of the electrostatic chuck 102, thereby encapsulating a portion of the second layer 112 that is exposed to a hazardous material surrounding the electrostatic chuck 102 and that may be exposed to a hazardous environment.

[0060] The encapsulation coating 120 may comprise any combination of alumina, yttrium oxide, or the like. In some embodiments, the encapsulation coating 120 may comprise, consist of, or substantially consist of any combination of alumina, yttrium oxide, or the like. In some embodiments, the encapsulation coating 120 may comprise alumina. In other embodiments, the encapsulation coating 120 may comprise yttrium oxide. In still other embodiments, the encapsulation coating 120 may comprise both alumina and yttrium oxide. In some embodiments, the encapsulation coating 120 comprises a metal oxide.

[0061] The encapsulation coating 120 can be formed using one or more methods. In some embodiments, the encapsulation coating 120 can be formed using atomic layer deposition (ALD). ALD is a technique that sequentially utilizes a gas-phase chemical process. ALD can use at least one material as a precursor (e.g., a reactant). The at least one precursor is exposed to a material and reacts with a surface of the material. In some embodiments, the at least one precursor can react with at least a portion of the surface of a material containing organic material 114, such that a thin film (such as, for example, film 126 shown in FIG. 2) is sequentially deposited onto a substrate of the material by sequential exposure to the at least one precursor. In some embodiments, the at least one precursor may comprise a first and a second precursor. The film is sequentially deposited onto the substrate using an ALD process until the encapsulation coating 120 is formed as a film encapsulating at least a portion 124 of a second layer 112 between the first layer 110 and the third layer 116. In some embodiments, the encapsulation coating 120 film may encapsulate one or more layers of the electrostatic chuck, such as (for example) one or more portions of the first layer 110, the second layer 112, the third layer 116, or any combination thereof.

[0062] Encapsulation coating 120 encapsulates at least a portion 124 of the second layer 112 to protect the second layer 112 (or a portion thereof) from potentially hazardous materials including at least one of ozone, plasma, other hazardous materials, or any combination thereof. In some embodiments, exposure to hazardous materials, such as, for example, organic materials in the second layer 112, can cause at least one of aging, chemical compositional changes, thickness changes, or any combination thereof in the second layer 112 and / or the electrostatic chuck 102. More specifically, the material can be hazardous to the organic material 114 of the second layer 112.

[0063] In some embodiments, the portion 124 of the second layer 112 not covered by the first layer 110 and the third layer 116 is at least one sidewall of the second layer 112. Additionally, an encapsulating coating 120 covering at least the portion 124 of the second layer 112 not covered by the first layer 110 and the third layer 116 is disposed on one side surface of the second layer 112 and forms at least a portion of at least one side 108 of the electrostatic chuck 102.

[0064] The encapsulating coating 120 may encapsulate a portion of the outer surface of the electrostatic chuck 102, corresponding to at least one layer comprising organic material 114 forming a portion of the outer surface of the electrostatic chuck 102. The encapsulating coating 120 may also encapsulate other portions of the outer surface of the electrostatic chuck 102, corresponding to other layers or components of the electrostatic chuck 102 that may or may not contain organic material, which together with the at least one layer comprising organic material 114 form a surface of the electrostatic chuck 102. In some embodiments, the encapsulating coating 120 covers 1% to 99% of the outer surface of the electrostatic chuck 102. In other embodiments, the encapsulating coating 120 may cover the entire outer surface of the electrostatic chuck 102 except for the electrodes extending from the bottom 106 surface of the electrostatic chuck 102. That is, the encapsulation coating 120 can almost cover the entire outer surface of the electrostatic chuck 102, which includes needles, such as at least one electrode needle 134 (see FIG. 2) or at least one heating element needle 152 (see FIG. 5) extending through one or more layers and the encapsulation coating 120 and protruding from the bottom 106 of the electrostatic chuck 102.

[0065] The electrostatic chuck 102 may further include an electrode layer 132 comprising at least one electrode located between the first layer 110 and the second layer 112. The electrode layer 132 includes a patterned metal coating formed by the at least one electrode. The electrode layer 132 includes at least one electrode pin 134 electrically connected to the at least one electrode. The at least one electrode pin 134 may also include a patterned metal coating. The electrode layer 132 is configured to generate a clamping force in response to a current being directed through the at least one electrode pin 134 and through the at least one electrode of the electrode layer 132 to clamp a semiconductor wafer to the electrostatic chuck 102. The electrode layer 132 may be disposed between the first layer 110 and the second layer 112.

[0066] Figure 2 is a side view of one of the devices 200 according to one of some embodiments.

[0067] The device 200 includes an electrostatic chuck 102. The electrostatic chuck 102 may include at least one electrode 142. In some embodiments, the at least one electrode 142 may be a patterned metallic coating. In some embodiments, the at least one electrode 142 may be embedded in a second layer 112, which is located between a first layer 110 and a third layer 116 and serves as an electrode circuit layer, among other things. In some embodiments, the at least one electrode 142 may be in contact with the first layer 110. In some embodiments, at least a portion of the at least one electrode 142 may be embedded in the second layer 112. In other embodiments, the at least one electrode 142 may be embedded in the second layer 112 adjacent to the first layer 110, such that one side of the at least one electrode 142 not embedded in the second layer 112 contacts one bottom of the first layer 110.

[0068] The electrostatic chuck 102 may include at least one electrode pin 134 electrically connected to at least one electrode 142. The at least one electrode pin 134 may extend from the at least one electrode 142 through one or more layers of the electrostatic chuck 102 to a bottom 106 of one of the electrostatic chuck 102. In some embodiments, at least one electrode pin 134 of the electrode layer 132 may extend through at least one of a second layer 112, a third layer 116, an encapsulation coating 120, or any combination thereof.

[0069] Figure 3 is a partial side cross-sectional view of the device 200 in Figure 2 according to some embodiments.

[0070] The electrostatic chuck 102 includes a first layer 110, a second layer 112, a third layer 116, and an encapsulation coating 120. The second layer 112 includes an organic material 114 and is sandwiched between the first layer 110 and the third layer 116, which do not contain the organic material 114.

[0071] The encapsulation coating 120 includes a film 126 formed on at least a portion of the second layer 112 not covered by the first layer 110 and the third layer 116. The encapsulation coating 120 is also formed on a portion of the first layer 110 and a portion of the third layer 116 to encapsulate the second layer 112 from the external environment. In this regard, in applications where the second layer 112 may be exposed to harmful species such as ozone or H2 (which can damage the electrostatic chuck 102 by causing damage to the organic material 114 of the second layer 112), the encapsulation coating 120 protects the electrostatic chuck 102.

[0072] The encapsulation coating 120 may have a thickness of any range or subrange between 10 nm and 300 nm or the like. In some embodiments, the encapsulation coating 120 may have one of the following thicknesses: 10 nm to 300 nm, 20 nm to 300 nm, 30 nm to 300 nm, 40 nm to 300 nm, 50 nm to 300 nm, 75 nm to 300 nm, 100 nm to 300 nm, 150 nm to 300 nm, 200 nm to 300 nm, 250 nm to 300 nm, 10 nm to 250 nm, 20 nm to 250 nm, 30 nm to 250 nm, 40 nm to 250 nm, 50 nm to 250 nm, 75 nm to 250 nm, 100 nm to 250 nm, 150 nm to 250 nm, 200 nm to 250 nm, 10 nm to 200 nm, 20 nm to 200 nm, 30 nm to 200 nm, 40 nm to 200 nm, 50 nm to 200 nm, 75 nm to 200 nm. nm, 100 nm to 200 nm, 150 nm to 200 nm, 10 nm to 150 nm, 20 nm to 150 nm, 30 nm to 150 nm, 40 nm to 150 nm, 50 nm to 150 nm, 75 nm to 150 nm, 100 nm to 150 nm, 10 nm to 100 nm, 20 nm to 100 nm, 30 nm to 100 nm, 40 nm to 100 nm, 50 nm to 100 nm, 75 nm to 100 nm, 10 nm to 75 nm, 20 nm to 75 nm, 30 nm to 75 nm, 40 nm to 75 nm, 50 nm to 75 nm, 10 nm to 50 nm, 20 nm to 50 nm, 30 nm to 50 nm, or 40 nm to 50 nm. In some embodiments, the encapsulation coating 120 has a thickness of one of 10 nm to 300 nm. In some embodiments, the encapsulation coating 120 has a thickness of 10 nm to 200 nm. In some embodiments, the encapsulation coating 120 has a thickness of 10 nm to 250 nm. In some embodiments, the encapsulation coating 120 has a thickness of 30 nm to 100 nm.

[0073] The encapsulation coating 120 and film 126 are applied to a surface with conformal geometry. The surface on which the encapsulation coating 120 is formed may include at least one layer of an electrostatic chuck 102 made of organic material 114. The surface on which the encapsulation coating 120 is formed may also include one or more other layers of the electrostatic chuck 102 that may or may not contain organic material 114. The encapsulation coating 120 may conformally maintain the surface of a respective electrostatic chuck 102 having a complex geometry that varies according to the deposition process, the complex geometry having a high aspect ratio. The complex geometry may originate from an assembly containing organic material 114. In some embodiments, the complex geometry may originate from an adjacent layer of the electrostatic chuck 102 formed together with at least one layer containing organic material 114. In some embodiments, the encapsulating coating 120 can conform to a complex geometry having a high aspect ratio, the complex geometry including (but not limited to) at least one of the following: large or small diameter holes, apertures, channels, deep recesses, spaces, gaps, trenches, wells, other complex geometries or any combination thereof.

[0074] The encapsulation coating 120 may have a substantially uniform thickness across one portion of the encapsulation coating 120. That is, the film 126 of the encapsulation coating 120 may have an almost uniform or equal thickness across one portion of the coated area. The thickness of the encapsulation coating 120 may vary depending on the deposition process.

[0075] Region 130 shows a portion of the first layer 110, the second layer 112, the third layer 116, and the encapsulating coating 120. The encapsulating coating 120 is located on a portion of the second layer 112 not covered by the first layer 110 and the third layer 116, a portion of the first layer 110 adjacent to the second layer 112, and a portion of the third layer 116 adjacent to the second layer 112 opposite to the first layer 110. The encapsulating coating 120 conforms to the geometry of a portion of the surface 136 of the electrostatic chuck 102 containing the first layer 110, the second layer 112, and the third layer 116. Furthermore, the encapsulating coating 120 may contain a substantially uniform thickness of a film 126 spanning the surface 136. That is, a portion of the surface 136 of the electrostatic chuck 102 may contain a complex geometry, and the film 126 of the encapsulating coating 120 conforms to the geometry of that portion of the surface 136. In this regard, the encapsulating coating 120 applied to the portion of surface 136 of the electrostatic chuck 102 may have a uniform thickness conforming to the geometry of the portion of surface 136 of the electrostatic chuck 102.

[0076] In some embodiments, a portion of the surface 136 of the electrostatic chuck 102 may include at least one surface defect 138. In some embodiments, a portion of the second layer 112 not covered by the first layer 110 and the third layer 116 may further include at least one surface defect 138. In some embodiments, at least one surface defect 138 may be formed by any combination of the first layer 110, the second layer 112, the third layer 116, or at least one of other layers. In some embodiments, at least one surface defect 138 may include (but is not limited to) at least one of a hole, a fine hole, a trench, a well, a gap, a channel, other defects, or any combination thereof, formed by at least one of the first layer, the second layer, the third layer, other layers, or any combination thereof, and may include a complex geometry having a high aspect ratio.

[0077] In some embodiments, in response to the electrostatic chuck 102 being exposed to a hazardous material at a first temperature for a first period of time, the thickness of one of the encapsulation coatings 120 after exposure is configured to vary by 10% or less.

[0078] In some embodiments, in response to the electrostatic chuck 102 being exposed to a harmful species or material at a first temperature for a first period of time, the metal composition of the encapsulation coating 120 after exposure is configured to change by 10% or less.

[0079] Figure 4 is a cross-sectional side view of a device 300 according to some embodiments.

[0080] The encapsulating coating 120 may encapsulate one or more layers of the electrostatic chuck 102. That is, the encapsulating coating 120 may include a film 126 that not only covers the portion of the second layer 112 located between the first layer 110 and the third layer 116 and not covered by the first layer 110 and the third layer 116, but also covers the entire outer surface of the electrostatic chuck 102 including the first layer 110, the second layer 112, and the third layer 116. In some embodiments, the electrostatic chuck 102 may include the first layer 110, the second layer 112, the third layer 116, and one or more other layers, and the film 126 may cover the entire electrostatic chuck 102 and the layers.

[0081] The electrostatic chuck 102 may further include at least one electrode 142 formed with a patterned metallic coating and embedded in a second layer 112. In some embodiments, the at least one electrode 142 may be an electrode layer 132 disposed between the first layer 110 and the second layer 112. The at least one electrode 142 may be connected to at least one electrode needle 134. In some embodiments, the at least one electrode needle 134 may extend from the at least one electrode 142 through one or more of the layers of the electrostatic chuck 102 and emerge from the bottom 106 of the electrostatic chuck 102. In some embodiments, the at least one electrode needle 134 may extend from the at least one electrode 142 through the second layer 112, the third layer 116, or both the second layer 112 and the third layer 116, and other layers. Referring to FIG4, the at least one electrode needle 134 extends from each of the at least one electrode 142 through one or more portions of the second layer 112, the third layer 116, and the encapsulation coating 120.

[0082] Figure 5 is a cross-sectional side view of one of the devices 400 according to one of some embodiments.

[0083] In device 400, electrostatic chuck 102 includes a first layer 110, a second layer 112, a third layer 116, and a fourth layer 140. Electrostatic chuck 102 includes an encapsulating coating 120. In some embodiments, the second layer 112 may be located between the first layer 110 and the third layer 116, and the encapsulating coating 120 may be formed on at least a portion of the second layer 112 not covered by the first layer 110 and the third layer 116. In some embodiments, the fourth layer 140 may be located adjacent to the third layer 116 at the bottom 106 of the electrostatic chuck 102. That is, the third layer 116 may be disposed between the fourth layer 140 and the second layer 112, and the fourth layer 140 may define the bottom layer of the electrostatic chuck 102. In some embodiments, the encapsulating coating 120 may also be formed on at least a portion of the fourth layer 140 not covered by the third layer 116. In this regard, in some embodiments, the encapsulation coating 120 may comprise portions of a corresponding layer that covers the organic material 114 and is not covered by another layer of the electrostatic chuck 102.

[0084] According to some embodiments, the fourth layer 140 may be an insulating layer. In some embodiments, the fourth layer 140 may comprise an organic material 114. In other embodiments, the fourth layer 140 may comprise, be composed of, or be substantially composed of an organic material 114. In some embodiments, the fourth layer 140 may comprise an organic material 114, which may comprise (but is not limited to) at least one of the following: acrylate polymers, polyolefins, polyamides, polyethers, polycarbonates, polyurethanes, vinyl polymers, fluoropolymers, other types of polymers, or any combination thereof. In some embodiments, the organic material 114 may comprise (but is not limited to) at least one of the following: fluorinated ethylene propylene (FEP), fluoropolymers, high-density polyethylene (HDPE), low-density polyethylene (LDPE), medium-density polyethylene (MDPE), perfluoroalkoxyalkylene (PFA), polybutene (PB), poly(butyl acrylate) (PBA), poly(ethyl acrylate) (PEA), polyacrylonitrile (PAN), polyaryletherketone (PAEK), polybutadiene, polybutylene adipate (PBAT), polybutylene succinate (PBS), polybutylene terephthalate (PBT), and polychlorotrifluoroethylene (PCTFE or PTFCE). The fourth layer, 140 series, comprises at least one of the following: polyetherimide, polyethylene (PE), polyetheretherketone (PEEK), polyetherketoneketone (PEKK), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyglycolic acid (PGA), polystyrene (PPSU), polymethylpentene (PMP), polypropylene (PP), nylon, polyoxobutane (POX), polyoxymethylene (POM), polyphenylene ether (PPE), polypropylene glycol (PPG), polystyrene (PS), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polyvinyl fluoride (PVF), polyvinylcarbazole (PVK), polyvinylidene chloride (PVDC), polyvinylidene fluoride (PVDF), or any combination thereof. In some embodiments, the fourth layer, 140 series, comprises an insulating layer of at least one of fluorinated ethylene propylene (FEP), perfluoroalkoxyalkane (PFA), polytetrafluoroethylene (PTFE), polyimide (PI), polyethylene terephthalate (PET), or any combination thereof.

[0085] Referring to Figure 5, the electrostatic chuck 102 includes a first layer 110, a second layer 112, a third layer 116, a fourth layer 140, and an encapsulation coating 120. The second layer 112 and the fourth layer 140 comprise organic material 114. A portion of the second layer 112 not covered by the first layer 110 and the third layer 116 constitutes at least one side of the second layer 112. The encapsulation coating 120 may include portions covering at least one side of the second layer 112 not covered by the first layer 110 and the third layer 116. In some embodiments, each portion of the encapsulation coating 120 covering the second layer 112 may also cover at least a portion of the first layer 110, the third layer 116, or both the second layer 112 and the third layer 116. A portion of the fourth layer 140 not covered by the third layer 116 defines the bottom 106 of the electrostatic chuck 102 and at least one side of the fourth layer 140. The encapsulation coating 120 may further include portions covering the bottom and at least one side of the fourth layer 140. In some embodiments, portions of the encapsulating coating 120 covering the bottom and at least one side of the fourth layer 140 may also cover at least a portion of the third layer 116. Thus, the encapsulating coating 120 may cover at least a portion of the electrostatic chuck 102 comprising the organic material 114 (including the second layer 112 and the fourth layer 140 not covered by other components of the electrostatic chuck 102) to protect the layer comprising the organic material 114 from damage caused by exposure to hazardous materials.

[0086] According to some embodiments, the electrostatic chuck 102 may further include at least one heating element 150. The at least one heating element 150 includes a patterned metallic coating. The at least one heating element 150 may be disposed between the third layer 116 and the fourth layer 140. In some embodiments, the at least one heating element 150 may be embedded in the fourth layer 140. In some embodiments, at least a portion of the at least one heating element 150 may be embedded in the fourth layer 140 and contact the bottom of one of the third layers 116, the fourth layer 140 serving as a heating circuit layer, etc.

[0087] At least one heating element 150 may include at least one heating element pin 152 electrically connected to at least one heating element 150. The at least one heating element pin 152 extends from the at least one heating element 150 through at least a fourth layer 140 to a bottom 106 of one of the electrostatic chucks 102. The at least one heating element 150 is configured to generate heat in response to an applied current to the at least one heating element pin 152, thereby heating the body of the electrostatic chuck 102 and maintaining the electrostatic chuck 102 at a specific temperature or temperature range. In some embodiments, the at least one heating element pin 152 may extend through the fourth layer 140 and a portion of the encapsulation coating 120 covering the fourth layer 140 to extend from the bottom 106 of the electrostatic chuck 102.

[0088] Figure 6 is a cross-sectional side view of a device 500 according to some embodiments.

[0089] The encapsulating coating 120 may encapsulate one or more layers of the electrostatic chuck 102. The encapsulating coating 120 may encapsulate layers containing organic material 114, but may also encapsulate layers not containing organic material 114. That is, the encapsulating coating 120 may include a film 126 that not only covers a portion of the second layer 112 located between the first layer 110 and the third layer 116 and a portion of the fourth layer 140 at the bottom of the electrostatic chuck 102, but also covers the entire outer surface of the electrostatic chuck 102 including the first layer 110, the second layer 112, the third layer 116 and the fourth layer 140.

[0090] According to some embodiments, the electrostatic chuck 102 may comprise one or more layers, at least one of which contains an organic material 114. In some embodiments, the electrostatic chuck 102 may further comprise at least one electrode 142 for clamping the electrostatic chuck 102 onto a substrate and may further comprise at least one heating element 150 for regulating a temperature at the electrostatic chuck 102. The at least one electrode 142 comprises at least one electrode pin 134 electrically connected to the at least one electrode 142 and extending from the bottom 106 of the electrostatic chuck 102. The at least one heating element 150 comprises at least one heating element pin 152 electrically connected to the at least one heating element 150 and extending from the bottom 106 of the electrostatic chuck 102. Referring to FIG6, for example, in some embodiments, the at least one electrode pin 134 and the at least one heating element pin 152 may extend through one or more respective layers of the electrostatic chuck 102 and exit from the bottom 106 of the electrostatic chuck 102. In this regard, in some embodiments, at least one electrode needle 134 may extend through a portion of each of the second layer 112, the third layer 116, the fourth layer 140 and the encapsulation coating 120, and at least one heating element needle 152 may extend through a portion of each of the fourth layer 140 and the encapsulation coating 120.

[0091] It should be understood that the electrostatic chuck 102 may comprise one or more layers, and at least one of the layers of the electrostatic chuck 102 may contain an organic material 114. Furthermore, it should be understood that the configuration of each layer of the electrostatic chuck 102 shown in the figures is illustrative and not intended to be limiting. In this regard, the electrostatic chuck 102 may comprise one or more layers configured in any of a plurality of configurations and any of a plurality of different combinations thereof. It should also be understood that, unless otherwise specified, the shape, size, and dimensions of each layer and each component in the electrostatic chuck 102 and shown in the figures are illustrative and not intended to be limiting. Therefore, according to the present invention, the electrostatic chuck 102 and one or more components of the electrostatic chuck 102 may comprise any of a plurality of different shapes, sizes, and dimensions.

[0092] Figure 7 is a non-limiting example of a graph 600 illustrating chemical composition changes according to some embodiments.

[0093] Devices 100, 200, 300, 400, and 500 include an electrostatic chuck 102 comprising one or more layers, at least one of which comprises an organic material 114. For example, the electrostatic chuck 102 may include a second layer 112, as shown in FIG1. ​​In another embodiment, the electrostatic chuck 102 may include a second layer 112 and a fourth layer 140, as shown in FIG5. The electrostatic chuck 102 further includes an encapsulating coating 120 that encapsulates at least a portion of the electrostatic chuck 102 containing components made of the organic material 114 to protect such components from damage caused by exposure to hazardous materials.

[0094] Without the encapsulating coating 120 covering at least one layer made of organic material 114, exposure of the electrostatic chuck 102 to hazardous materials such as ozone, plasma, and other similar harmful materials could cause aging of at least one layer. Aging of at least one layer may include changes in the chemical composition of at least one layer, changes in the thickness of at least one layer, or any combination thereof. In this regard, the encapsulating coating 120 encapsulates at least one layer containing organic material 114 that is not covered by another layer or component of the electrostatic chuck 102 and resists aging caused by hazardous materials that could damage at least one layer containing organic material 114. By encapsulating at least a portion of the electrostatic chuck 102 containing at least one layer made of organic material 114, the encapsulating coating 120 protects at least one layer made of organic material 114 from damage.

[0095] Encapsulation coating 120 may comprise one or more materials, including (but not limited to) alumina, yttrium oxide, metal oxides, or any combination thereof. In some embodiments, encapsulation coating 120 may comprise alumina. In some embodiments, encapsulation coating 120a may further comprise one or more other materials. For example, in some embodiments, other materials may comprise non-organic materials, such as (e.g.) silicon.

[0096] At subfigure 602, one chemical composition of the encapsulating coating 120a before exposure to hazardous materials is shown, the encapsulating coating 120a having a first thickness. It should be understood that the thickness of the encapsulating coating 120a is illustrative and not intended to be limiting. Rather, the thickness of the encapsulating coating 120a at subfigure 602 is used to achieve a test of the properties of the encapsulating coating 120a as a result of exposure to hazardous materials.

[0097] At sub-Figure 604, the chemical composition of the encapsulating coating 120a after exposure to a hazardous material at a first temperature for a first time period is shown. In response to the electrostatic chuck 102 being exposed to the hazardous material at the first temperature for the first time period, the chemical composition of the encapsulating coating 120a changes by 10% or less after exposure. In some embodiments, in response to the electrostatic chuck 102 being exposed to the hazardous material at the first temperature for the first time period, the chemical composition of the encapsulating coating 120a changes by 5% or less after exposure. For example, the alumina composition in the encapsulating coating 120a changes by about 1.53% after exposure. In other embodiments, in response to the electrostatic chuck 102 being exposed to the material at the first temperature for the first time period, the chemical composition of the encapsulating coating 120a changes by 1% or less after exposure. For example, the composition in the encapsulating coating 120a may change by about 0.66% after exposure.

[0098] In response to the electrostatic chuck 102 being exposed to material at a first temperature for a first time period, the thickness of the encapsulating coating 120a changes by 10% or less after exposure. In some embodiments, in response to the electrostatic chuck 102 being exposed to material at a first temperature for a first time period, the thickness of the encapsulating coating 120a changes by 5% or less after exposure. In other embodiments, in response to the electrostatic chuck 102 being exposed to material at a first temperature for a first time period, the thickness of the encapsulating coating 120a changes by 2% or less after exposure. For example, the thickness of the encapsulating coating 120a after exposure may change by about 1.51%.

[0099] Encapsulation coating 120 may contain yttrium oxide. In some embodiments, encapsulation coating 120b may contain alumina and yttrium oxide. In some embodiments, encapsulation coating 120b may further contain one or more other materials. Other materials may include non-organic materials, such as, for example, silicon.

[0100] At subfigure 606, one chemical composition of the encapsulating coating 120b before exposure to hazardous materials is shown, the encapsulating coating 120b having a second thickness. It should be understood that the thickness of the encapsulating coating 120b is illustrative and not intended to be limiting. Rather, the thickness of the encapsulating coating 120b at subfigure 606 is used to achieve a test of the properties of the encapsulating coating 120b resulting from exposure to hazardous materials.

[0101] At sub-Figure 608, the chemical composition of the encapsulating coating 120b after exposure to a hazardous material at a first temperature for a first time period is shown. In response to the electrostatic chuck 102 being exposed to the material at the first temperature for the first time period, the chemical composition of the encapsulating coating 120b after exposure is configured to change by 10% or less. In some embodiments, in response to the electrostatic chuck 102 being exposed to the material at the first temperature for the first time period, the chemical composition of the encapsulating coating 120b after exposure is configured to change by 5% or less. For example, the chemical composition of the encapsulating coating 120b after exposure may change by about 2.14%. In other embodiments, in response to the electrostatic chuck 102 being exposed to the material at the first temperature for the first time period, the chemical composition of the encapsulating coating 120b after exposure is configured to change by 1% or less. For example, the chemical composition of the encapsulating coating 120b after exposure may change by about 0.22%.

[0102] In response to the electrostatic chuck 102 being exposed to material at a first temperature for a first time period, the thickness of the encapsulating coating 120b after exposure is configured to vary by 10% or less. In some embodiments, in response to the electrostatic chuck 102 being exposed to material at a first temperature for a first time period, the thickness of the encapsulating coating 120b after exposure is configured to vary by 5% or less. In other embodiments, in response to the electrostatic chuck 102 being exposed to material at a first temperature for a first time period, the thickness of the encapsulating coating 120b after exposure is configured to vary by 2% or less. For example, the thickness of the encapsulating coating 120b after exposure may vary by about 0.39%.

[0103] Figure 8 is a flowchart of one method 700 for forming an encapsulation coating on an electrostatic chuck according to some embodiments. As shown in Figure 8, in some embodiments, the method 700 for forming an encapsulation coating on an electrostatic chuck includes one or more of the following steps: placing an electrostatic chuck 702 in a chamber of a deposition tool; and forming a vapor-deposited layer 704 on at least a portion of the electrostatic chuck. In some embodiments, method 700 may further include obtaining the electrostatic chuck before placing it in the deposition tool. The electrostatic chuck may include any of one or more of the electrostatic chucks disclosed herein. In some embodiments, forming 704 includes forming a vapor-deposited layer on at least a portion of the electrostatic chuck via atomic layer deposition. In some embodiments, forming 704 includes forming a vapor-deposited layer on at least a portion of the electrostatic chuck via chemical vapor deposition. The vapor-deposited layer may be formed at any location on the electrostatic chuck disclosed herein.

[0104] [State / Appearance] [ ] 1. An electrostatic chuck, comprising: The first layer; A second layer, which includes an organic material; One-capsule sealing coating; and The third layer; The second layer is located between the first layer and the third layer, such that at least a portion of the second layer is not covered by the first layer and the third layer; The encapsulating coating covers at least a portion of the second layer that is not covered by the first and third layers. State 2. An electrostatic chuck as in State 1, wherein the encapsulating coating is a highly conformal layer. Sample 3. An electrostatic chuck as described in any of the preceding samples, wherein the encapsulating coating comprises at least one of yttrium oxide, aluminum oxide, or any combination thereof. Sample 4. An electrostatic chuck as described in any of the preceding samples, wherein the encapsulating coating further covers at least a portion of the first and third layers adjacent to the second layer. Sample 5. An electrostatic chuck as described in any of the aforementioned samples, wherein the vapor-deposited layer has a thickness of 5 nm to 300 nm. Sample 6. An electrostatic chuck of any of the aforementioned samples, wherein the organic material comprises at least one of the following: acrylate polymers, polyolefins, polyamides, polyethers, polycarbonates, polyurethanes, vinyl polymers, fluoropolymers, or any combination thereof. Sample 7. An electrostatic chuck as described in any of the preceding samples, wherein the organic material comprises at least one of the following: fluorinated ethylene propylene (FEP), fluoropolymer, high-density polyethylene (HDPE), low-density polyethylene (LDPE), medium-density polyethylene (MDPE), perfluoroalkoxyalkane (PFA), polybutene (PB), poly(butyl acrylate) (PBA), poly(ethyl acrylate) (PEA), polyacrylonitrile (PAN), polyaryletherketone (PAEK), polybutadiene, polybutylene adipate (PBAT), polybutylene succinate (PBS), polybutylene terephthalate (PBT), polychlorotrifluoroethylene (PCTFE or PTFCE). Polyetherimide, polyethylene (PE), polyetheretherketone (PEEK), polyetherketoneketone (PEKK), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyglycolic acid (PGA), polystyrene (PPSU), polymethylpentene (PMP), polypropylene (PP), nylon, polyoxobutane (POX), polyoxymethylene (POM), polyphenylene ether (PPE), polypropylene glycol (PPG), polystyrene (PS), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polyvinyl fluoride (PVF), polyvinylcarbazole (PVK), polyvinylidene chloride (PVDC), polyvinylidene fluoride (PVDF), or any combination thereof. Sample 8. An electrostatic chuck as described in any of the preceding samples, wherein the encapsulating coating covers one surface of the second layer containing at least one surface defect having an aspect ratio of 1:1 to 1000:1. Sample 9. An electrostatic chuck as described in any of the aforementioned samples, wherein the encapsulating coating completely covers the portion of the second layer that is not covered by the first and third layers. Sample 10. An electrostatic chuck as described in any of the preceding samples, wherein after the electrostatic chuck is exposed to at least one of an ozone atmosphere, plasma, or any combination thereof for a duration of 6 hours to 24 hours at a temperature of 10°C to 130°C, the thickness change of the electrostatic chuck is 1% or less. Sample 11. An electrostatic chuck of any of the aforementioned samples, wherein after the electrostatic chuck is exposed to at least one of an ozone atmosphere, plasma or any combination thereof for a duration of 6 hours to 20 hours at a temperature of 10°C to 130°C, the metallic composition of the vapor-deposited layer changes by 10% or less, as measured by energy-dispersive X-ray spectroscopy. 12. An apparatus comprising: An electrostatic chuck, The electrostatic chuck includes: The first layer; A second layer, which includes an organic material; The third layer; and One-capsule sealing coating; The second layer is located between the first layer and the third layer, such that at least a portion of the second layer is not covered by the first layer and the third layer; The encapsulating coating is a conformal film covering at least one portion of the second layer that is not covered by the first and third layers. Version 13. The apparatus of version 12, wherein at least a portion of the bottom surface of the first layer contacts at least a portion of the top surface of the second layer. Version 14. The apparatus of version 12 or 13, wherein at least a portion of the bottom surface of one of the second layers contacts at least a portion of the top surface of one of the third layers. 15. A device as described in 12, 13 or 14, wherein the first layer is a dielectric layer, the second layer is a bonding layer and the third layer is an insulating layer. Version 16. The apparatus of version 12, 13, 14 or 15, further comprising: A fourth layer, which includes an organic material, The third layer is located between the second and fourth layers; The encapsulating coating further covers at least a portion of the fourth layer that is not covered by the third layer. Version 17. The apparatus of Version 16, wherein each of the first layer, the second layer, the third layer and the fourth layer has: One top surface, A bottom surface, which is opposite to the top surface, and One side, which is located between the top surface and the bottom surface. The encapsulating coating covers at least one of the bottom surface of the fourth layer, the side surface of the fourth layer, or any combination thereof. Version 18. The apparatus of version 17, wherein at least a portion of the bottom surface of the third layer contacts at least a portion of the top surface of the fourth layer. Format 19. A device as in Formats 12, 13, 14, 15, 16, 17 or 18, wherein the first layer is a dielectric layer, the second layer is a bonding layer, the third layer is an insulating layer, and the fourth layer is a heating circuit layer. 20. A method comprising: An electrostatic chuck is placed in one of the chambers of a deposition tool. The electrostatic chuck includes: The first layer; A second layer, comprising an organic material; and The third layer; The second layer is located between the first layer and the third layer, such that at least a portion of the second layer is not covered by the first layer and the third layer; and An encapsulating coating is formed on at least the portion of the second layer that is not covered by the first and third layers. State 21. The method of State 20, wherein the encapsulation coating is formed using atomic layer deposition. State 22. The method of State 20 or 21, wherein the encapsulation coating is formed using chemical vapor deposition. Version 23. The method of Versions 20, 21 or 22, wherein the encapsulating coating comprises ceramic alumina. Version 24. The method of Versions 20, 21, 22 or 23, wherein the encapsulating coating comprises yttrium oxide.

[0105] 100: Device 102: Electrostatic Chuck 104: Top 106: Bottom 108: Side 110: First floor 112: Second layer 114: Organic Materials 116: Third floor 120: Encapsulation coating 120a: Encapsulation coating 120b: Encapsulation coating 124: Part 126: Membrane 130: Area 132: Electrode layer 134: Electrode needle 136: Surface 138: Surface defects 140: Fourth Floor 142: Electrode 150: Heating element 152: Heating element pin 200: Device 300: Device 400: Device 500: Device 600: Curve Graph 602: Subgraph 604: Subgraph 606: Subgraph 608: Subgraph 700: Method 702: Placement 704: Formation

Claims

1. An electrostatic chuck, comprising: The first layer; A second layer, which includes an organic material; A third layer, wherein the second layer is located between the first layer and the third layer, such that at least a portion of the second layer is not covered by the first layer and the third layer; and an encapsulating coating, wherein the encapsulating coating covers at least the portion of the second layer that is not covered by the first layer and the third layer.

2. The electrostatic chuck of claim 1, wherein the encapsulation coating is a highly conformal layer.

3. The electrostatic chuck of claim 2, wherein the encapsulating coating comprises at least one of yttrium oxide, aluminum oxide, or any combination thereof.

4. The electrostatic chuck of claim 1, wherein the encapsulating coating further covers at least a portion of the first and third layers adjacent to the second layer.

5. The electrostatic chuck of claim 1, wherein the vapor-deposited layer has a thickness of 5 nm to 300 nm.

6. The electrostatic chuck of claim 1, wherein the organic material comprises at least one of the following: acrylate polymers, polyolefins, polyamides, polyethers, polycarbonates, polyurethanes, vinyl polymers, fluoropolymers, or any combination thereof.

7. The electrostatic chuck of claim 6, wherein the organic material comprises at least one of the following: fluorinated ethylene propylene (FEP), fluoropolymers, high-density polyethylene (HDPE), low-density polyethylene (LDPE), medium-density polyethylene (MDPE), perfluoroalkoxyalkane (PFA), polybutene (PB), poly(butyl acrylate) (PBA), poly(ethyl acrylate) (PEA), polyacrylonitrile (PAN), polyaryletherketone (PAEK), polybutadiene, polybutylene adipate (PBAT), polybutylene succinate (PBS), polybutylene terephthalate (PBT), polychlorotrifluoroethylene (PCTFE or PTFCE), poly... Etherimide, polyethylene (PE), polyetheretherketone (PEEK), polyetherketoneketone (PEKK), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyglycolic acid (PGA), polystyrene (PPSU), polymethylpentene (PMP), polypropylene (PP), nylon, polyoxobutane (POX), polyoxymethylene (POM), polyphenylene ether (PPE), polypropylene glycol (PPG), polystyrene (PS), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polyvinyl fluoride (PVF), polyvinylcarbazole (PVK), polyvinylidene chloride (PVDC), polyvinylidene fluoride (PVDF), or any combination thereof.

8. The electrostatic chuck of claim 1, wherein the encapsulating coating covers one surface of the second layer containing at least one surface defect having an aspect ratio of 1:1 to 1000:

1.

9. The electrostatic chuck of claim 1, wherein the encapsulating coating completely covers the portion of the second layer that is not covered by the first and third layers.

10. The electrostatic chuck of claim 1, wherein after the electrostatic chuck is exposed to at least one of an ozone atmosphere, plasma or any combination thereof for a duration of 6 hours to 24 hours at a temperature of 10°C to 130°C, the thickness change of the electrostatic chuck is 1% or less.

11. The electrostatic chuck of claim 1, wherein after the electrostatic chuck is exposed to at least one of an ozone atmosphere, plasma, chemical vapor, reactive gas, corrosive environment or any combination thereof at a temperature of 10°C to 130°C for a duration of 6 hours to 20 hours, the metallic composition of the vapor-deposited layer changes by 10% or less, as measured by energy-dispersive X-ray spectroscopy.

12. A method for manufacturing an electrostatic chuck having a protective coating, comprising: An electrostatic chuck is placed in a chamber of a deposition tool, wherein the electrostatic chuck includes: a first layer; a second layer comprising an organic material; and a third layer; wherein the second layer is located between the first layer and the third layer such that at least a portion of the second layer is not covered by the first layer and the third layer; and an encapsulation coating is formed on at least the portion of the second layer not covered by the first layer and the third layer.

13. The method of claim 12, wherein the encapsulation coating is formed using atomic layer deposition.

14. The method of claim 12, wherein the encapsulation coating is formed using chemical vapor deposition.

15. The method of claim 12, wherein the encapsulating coating comprises ceramic alumina.

16. The method of claim 12, wherein the encapsulating coating comprises yttrium oxide.

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