Magnetic memory device

Abstract

A magnetic memory device includes a lower electrode, a protective structure on the lower electrode, and an upper electrode on the protective structure. The protective structure includes a protective free layer, a protective barrier layer on and in direct contact with the protective free layer, and a capping layer on and in direct contact with the protective barrier layer. The protective barrier layer prevents elements in the protective free layer from diffusing to the upper electrode, and the protective free layer is not electrically coupled to the capping layer.

Claims

1. A magnetic memory device, comprising: One electrode; A protective structure, located on the lower electrode, includes: a protective free layer; a protective barrier layer located on and in direct contact with the protective free layer; and a capping layer located on and in direct contact with the protective barrier layer; an upper free layer; an upper barrier layer, wherein the upper free layer is located between the upper barrier layer and the protective structure; and an upper electrode located on the protective structure, wherein the protective barrier layer is used to prevent elements in the protective free layer from diffusing to the upper electrode, and the protective free layer is not electrically coupled to the capping layer.

2. The magnetic memory device as claimed in claim 1, wherein the thickness of the protective barrier layer is greater than or equal to 0.2 Å and less than or equal to 1 Å.

3. The magnetic memory device of claim 1, wherein the cover layer includes a cover barrier layer and a uniform dense layer, the cover barrier layer being located between the protective barrier layer and the dense layer, and the cover barrier layer being used to block the diffusion of elements during the formation of the dense layer into the protective free layer.

4. The magnetic memory device as claimed in claim 3, wherein the thickness of the covering barrier layer is greater than the thickness of the dense layer.

5. The magnetic memory device as claimed in claim 3, wherein the thickness boundary of the covering barrier layer is greater than or equal to 3 Å and less than or equal to 7 Å.

6. The magnetic memory device as claimed in claim 3, wherein the dense layer is in direct contact with the upper electrode.

7. The magnetic memory device as claimed in claim 1 further includes a fixing layer and a lower barrier layer, wherein the fixing layer is located between the lower barrier layer and the lower electrode, and the lower barrier layer is located between the protective structure and the fixing layer.

8. The magnetic memory device as claimed in claim 1, wherein the protective structure is repeated n times between the lower electrode and the upper electrode, where n is greater than or equal to 2 and less than or equal to 5.

9. The magnetic memory device as claimed in claim 1, wherein the protective structure is repeated n times between the lower electrode and the upper free layer, where n is greater than or equal to 2 and less than or equal to 5.

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