Substrate processing apparatus and its operating method

Abstract

This invention relates to a substrate processing apparatus and its operating method. The substrate processing apparatus of this invention can perform a plasma cleaning process on a substrate bonded with at least one wafer and containing contaminants. It may include: a moving chuck for supporting the substrate; a plasma source for generating plasma and irradiating the substrate with the plasma; a baffle for regulating the flow of plasma to provide plasma to the substrate; and a control circuit for moving the moving chuck such that the distance between the baffle and the moving chuck corresponds to an optimal distance, which may be determined based on the distance between at least one wafer and the substrate.

Description

[Technical Field]

[0001] The present invention relates to an apparatus for performing a semiconductor manufacturing process, and more specifically, to a substrate processing apparatus and its operating method for performing a plasma cleaning process on a semiconductor substrate. [Previous Technology]

[0002] Generally, in semiconductor packaging processes, wet cleaning processes are used to remove contaminants such as flux remaining in the bond gap between the wafer and the substrate after the bonding process where the chip is attached to the substrate. However, wet cleaning processes cause environmental problems, increased process costs, and poor quality due to the use of harmful cleaning solvents.

[0003] In order to solve the problems of the wet cleaning process described above, a dry cleaning process using plasma or the like has been adopted. However, when using a general dry cleaning apparatus to perform dry cleaning on a substrate with a low bond gap of less than 30 μm, there is a problem that the plasma cannot penetrate sufficiently into the low bond gap, resulting in a significant decrease in cleaning effect.

[0004] Therefore, there is an urgent need for a dry cleaning apparatus that can perform a high-efficiency dry cleaning process for substrates with low bond gaps. [Summary of the Invention]

[0005] The problem the invention aims to solve

[0006] The purpose of this invention is to provide a substrate processing apparatus and its operating method, wherein the substrate processing apparatus obtains the optimal distance between a baffle and a moving chuck, and moves the moving chuck based on the obtained optimal distance, thereby performing a plasma cleaning process.

[0007] The purpose of this invention is to provide a substrate processing apparatus and its operating method, wherein the substrate processing apparatus obtains the optimal angle of plasma to be provided to the substrate, and provides plasma to the substrate based on the obtained optimal angle.

[0008] The technical problem to be solved by the present invention is not limited to the above-mentioned problem. Those skilled in the art can clearly understand other unmentioned technical problems through the following description.

[0009] Methods used to solve problems

[0010] A substrate processing apparatus according to an embodiment of the present invention performs a plasma cleaning process on a substrate having at least one chip bonded thereto and containing contaminants. The apparatus may include: a moving chuck supporting the substrate; a plasma source generating plasma and irradiating it onto the substrate; a baffle regulating the plasma flow to provide plasma to the substrate; and a control circuit that moves the moving chuck such that the distance between the baffle and the moving chuck corresponds to an optimal distance, which may be determined based on the distance between at least one chip and the substrate.

[0011] In some embodiments, the baffle may include a pattern layer for allowing plasma to pass through, the pattern layer being used to adjust the angle of the plasma provided to the substrate.

[0012] In some embodiments, the angle at which plasma is provided may be determined based on the distance between at least one wafer and the substrate.

[0013] In some embodiments, the angle at which the plasma is provided can be determined so that the plasma is provided vertically to the upper end of the substrate.

[0014] In some embodiments, the distance between at least one wafer and the substrate may be greater than 0 and less than 30 μm.

[0015] In some embodiments, the plasma source may be an inductively coupled plasma (ICP) source that uses the magnetic field generated by passing a high-frequency current through a coil to form plasma.

[0016] In some embodiments, the substrate processing apparatus may further include: an RF bias module that applies a radio frequency (RF) bias voltage to the moving chuck.

[0017] An operation method of a substrate processing apparatus according to an embodiment of the present invention may include: placing a substrate having at least one wafer bonded by a bonding process and containing contaminants on the upper end of a movable chuck; measuring the distance between at least one wafer and the substrate and generating substrate state data related to the distance between at least one wafer and the substrate; obtaining an optimal distance between a baffle and the movable chuck determined based on the substrate state data; moving the movable chuck such that the distance between the baffle and the movable chuck corresponds to the optimal distance; and irradiating the substrate with plasma.

[0018] In some embodiments, the operation method of the substrate processing apparatus may further include: obtaining an optimal angle of plasma provided to the substrate based on the distance between at least one wafer and the substrate; and adjusting the angle of plasma provided to the substrate to correspond to the optimal angle.

[0019] In some embodiments, the operation method of the substrate processing apparatus may further include the step of applying an RF bias voltage to a moving chuck.

[0020] Invention Effects

[0021] According to an embodiment of the present invention, a plasma cleaning process is performed on the substrate based on the optimal distance between the baffle and the moving chuck and the optimal angle for providing plasma, thereby improving the cleaning effect on contaminants remaining on the substrate.

[0022] According to an embodiment of the present invention, a plasma-based substrate surface treatment is performed simultaneously with the dry cleaning process, thereby improving the adhesion between the chip and the substrate and improving the yield of the packaging process.

[0023] The effects of the present invention are not limited to the effects described above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

Implementation Method

[0033] The exemplary embodiments of the present invention will now be described in detail with reference to the figures. However, the present invention is not limited to the exemplary embodiments. Unless otherwise defined, all terms (including technical and scientific terms) used in this specification should be used in accordance with their meaning as commonly understood by one of ordinary skill in the art to which this invention pertains, but these may differ due to the intent of those skilled in the art, precedents, or the emergence of new technologies.

[0034] Furthermore, unless explicitly defined, terms defined in commonly used dictionaries are not ideally or excessively interpreted. In certain cases, there are also terms arbitrarily chosen by the applicant, in which case their meaning will be detailed in the corresponding specification. Therefore, the terms used in this invention are not simply names of terms, but should be defined based on the meaning of the term and its content within the overall scope of this invention.

[0035] Throughout this specification, unless otherwise stated, the phrase "comprises" of a component means that it also includes other components, not excludes other components. Furthermore, the singular form used in this specification includes the plural form unless otherwise specified. Additionally, the expression "at least one of a, b, and / or c" used throughout this specification may encompass "a alone," "b alone," "c alone," "a and b," "a and c," "b and c," or "all of a, b, and c."

[0036] On the other hand, the terms "first and / or second" used in this specification, although used to describe different constituent elements, are only used to distinguish one constituent element from another, and are not intended to limit the constituent element referred to by the term. For example, without departing from the scope of the invention, a first constituent element may be referred to as a second constituent element, and a second constituent element may be referred to as a first constituent element.

[0037] Furthermore, terms such as "...section" and "...module" used in the specification refer to units that process at least one function or action, which can be implemented as hardware or software, or a combination of hardware and software. Additionally, embodiments of the invention can be represented in this specification by functional block configurations and multiple processing steps. These functional blocks can be implemented in various numbers of hardware and / or software configurations that perform specific functions. For example, embodiments can employ integrated circuit configurations capable of performing various functions under the control of more than one microprocessor or other control device, such as memory, processing, logic, lookup tables, etc.

[0038] Various embodiments of the present invention will be described in detail below with reference to the drawings. In describing the embodiments, technical content known in the art to which this invention pertains but not directly related to this invention will be omitted. This is to avoid obscuring the essence of the invention by omitting unnecessary descriptions and to more clearly convey the essence of the invention. For the same reason, some constituent elements in the drawings may be exaggerated, omitted, or shown schematically. Furthermore, the dimensions of each constituent element do not fully reflect its actual dimensions. Throughout this specification, the same element symbols may refer to the same or corresponding constituent elements.

[0039] FIG1 is a block diagram illustrating a substrate processing system 10 according to an embodiment of the present invention.

[0040] Referring to FIG1, the substrate processing system 10 according to an embodiment of the present invention may include a substrate processing apparatus 110 and an electronic device 120.

[0041] The substrate processing apparatus 110 according to an embodiment of the present invention can perform semiconductor processing on a substrate disposed on the substrate processing apparatus 110, and can be included in a semiconductor processing equipment. In an embodiment of the present invention, the substrate disposed on the substrate processing apparatus 110 can be at least one of a semiconductor wafer, a mask, a glass substrate, and a liquid crystal display.

[0042] Hereinafter, the substrate processing apparatus 110 according to an embodiment of the present invention is described as an apparatus for performing a plasma cleaning process to remove contaminants remaining between the wafer and the substrate after a semiconductor bonding process in which a chip is attached to a substrate. However, this is only for illustrative purposes and is not intended to limit the scope of the present invention. According to various embodiments of the present invention, the substrate processing apparatus 110 may be an apparatus for any process requiring plasma cleaning in various manufacturing processes such as packaging, reflow, etching, deposition, photolithography, and thermal processing in the production of semiconductor wafers.

[0043] The substrate processing apparatus 110 according to an embodiment of the present invention may include a plasma source 111, a baffle 112, a plasma outlet 113, a moving chuck 114, a radio frequency (RF) bias module 115, a distance measurement sensor 116, and a control circuit 117.

[0044] The plasma source 111 can generate plasma and irradiate the substrate under the control of the control circuit 117. In some embodiments, the plasma source 111 can be an inductively coupled plasma (ICP) source that uses a magnetic field generated by passing a high-frequency current through a coil to form plasma. ICP sources provide high plasma density and uniform plasma distribution, thereby improving the surface treatment efficiency of the substrate. However, the technical concept of the present invention is not limited thereto, and the plasma source 111 can be a capacitively coupled plasma (CCP), a reactively ion-etching (RIE) plasma, or a microwave plasma source, etc.

[0045] In some embodiments, the baffle 112 can regulate the flow of plasma under the control of the control circuit 117 to provide plasma to the substrate. As described below with reference to Figures 2 and 6, the baffle 112 may include a pattern layer for allowing plasma to pass through, the pattern layer being able to adjust the angle of the plasma provided to the substrate. As described below with reference to Figure 8, the angle of the plasma provided to the substrate may be determined based on the distance between the wafer and the substrate. In some embodiments, the angle of the plasma provided to the substrate may be perpendicular to the upper end of the substrate.

[0046] In some embodiments, the patterned layer may include a porous structure or deformable slots. The patterned layer can adjust not only the angle of the plasma supplied to the substrate, but also the distribution and intensity of the plasma. In this way, the patterned layer can provide optimal plasma distribution for specific areas and enable precision cleaning of the substrate.

[0047] In another embodiment, the baffle 112 may refer to any structure that can adjust the angle of the plasma supplied to the substrate even without the control of the control circuit 117.

[0048] In some embodiments, plasma outlet 113 may refer to a channel through which plasma for substrate processing is discharged to the outside under the control of control circuit 117. For example, plasma outlet 113 may be adjusted under the control of control circuit 117 to regulate the discharge speed of plasma for substrate processing and to regulate the internal pressure of plasma outlet 113.

[0049] In another embodiment, the plasma outlet 113 can be a channel connected to the outside, and the plasma used for substrate processing can also be discharged to any external channel without the control of the control circuit 117.

[0050] The movable chuck 114 can move under the control of the control circuit 117 and can support the substrate. In some embodiments, the movable chuck 114 can perform up-and-down movement, but the technical concept of the present invention is not limited thereto. It can move in any direction under the control of the control circuit 117 to easily provide plasma to the substrate disposed on the movable chuck 114. For example, the movable chuck 114 can rotate or move in the XY plane under the control of the control circuit 117 to uniformly provide plasma to the substrate.

[0051] The RF bias module 115 can apply an RF bias voltage to the moving chuck 114 under the control of the control circuit 117. The RF bias module 115 applies an RF bias voltage to the moving chuck 114, thereby improving the linearity of the plasma supplied to the substrate. In some embodiments, the RF bias module 115 can apply an RF bias voltage with multiple frequencies and voltage ranges, thereby allowing for fine-tuning of the intensity of the plasma supplied to the substrate.

[0052] In some embodiments, when it is necessary to perform concentrated processing on a specific area of ​​the substrate, the RF bias module 115 can apply different bias voltages to each area of ​​the moving chuck 114.

[0053] The distance measurement sensor 116 can measure the distance between the wafer and the substrate, as well as the distance between the baffle 112 and the movable chuck 114. In some embodiments, the distance measurement sensor 116 may be a laser sensor, an ultrasonic sensor, or the like, and may be a sensor capable of measuring in micrometer (μm) units.

[0054] As described below in conjunction with Figures 5 and 8, the distance between the wafer and the substrate measured by the distance measurement sensor 116 can be applied to determine the optimal distance between the baffle 112 and the movable chuck 114, or the optimal angle of plasma supplied to the substrate. Exemplarily, the distance between the baffle 112 and the movable chuck 114 measured by the distance measurement sensor 116 can be used during the movement of the movable chuck 114 by the control circuit 117, such that the distance between the baffle 112 and the movable chuck 114 corresponds to the optimal distance.

[0055] In some embodiments, the substrate processing apparatus 110 uses a distance measurement sensor 116 to measure the distance between the wafer and the substrate, and generates substrate state data related to the distance between the wafer and the substrate. In addition, the substrate processing apparatus 110 can provide the substrate state data to the electronic device 120.

[0056] In some embodiments, the substrate processing apparatus 110 may further include an angle measuring sensor (not shown) for measuring the angle of plasma supplied to the substrate. Exemplarily, the angle measuring sensor (not shown) may be a laser angle measuring sensor, an ultrasonic angle measuring sensor, etc. Exemplarily, the angle of plasma supplied to the substrate measured by the angle measuring sensor (not shown) may be used by the control circuit 117 to control the angle of plasma supplied to the substrate to correspond to an optimal angle.

[0057] The control circuit 117 may be any circuit that controls the operation of the plasma source 111, the baffle 112, the plasma outlet 113, the movable chuck 114, the RF bias module 115, the distance measurement sensor 116, and the angle measurement sensor (not shown). However, this is only exemplary, and the control circuit 117 may be any circuit that controls at least one of the plasma source 111, the baffle 112, the plasma outlet 113, the movable chuck 114, the RF bias module 115, the distance measurement sensor 116, and the angle measurement sensor (not shown).

[0058] In some embodiments, the control circuit 117 can receive optimal distance data corresponding to the optimal distance from the electronic device 120, thereby obtaining the optimal distance between the baffle 112 and the movable chuck 114. The control circuit 117 can control the movement of the movable chuck 114 such that the distance between the baffle 112 and the movable chuck 114 corresponds to the optimal distance. Wherein, as described below in conjunction with FIG. 5, the optimal distance can be determined based on the distance between the wafer and the substrate.

[0059] In another embodiment, the control circuit 117 can receive optimal angle data corresponding to the optimal angle from the electronic device 120, thereby obtaining the optimal angle of the plasma supplied to the substrate. The control circuit 117 can control the baffle 112 such that the angle of the plasma supplied to the substrate corresponds to the optimal angle. Wherein, as described below in conjunction with FIG8, the optimal angle can be determined based on the distance between the wafer and the substrate.

[0060] The electronic device 120 may include an analog module 121 and a memory 122.

[0061] In some embodiments, as described below in conjunction with FIG5, the simulation module 121 can perform a simulation based on substrate state data related to the distance between the wafer and the substrate, thereby determining the optimal distance between the baffle 112 and the movable chuck 114. After determining the optimal distance, the electronic device 120 can provide the optimal distance data corresponding to the optimal distance to the substrate processing device 110.

[0062] In another embodiment, as described below in conjunction with FIG8, the simulation module 121 can perform a simulation based on substrate state data related to the distance between the wafer and the substrate, thereby determining the optimal angle of the plasma supplied to the substrate. After determining the optimal angle, the electronic device 120 can provide the optimal angle data corresponding to the optimal angle to the substrate processing device 110.

[0063] Memory 122 can store semiconductor process recipe data. The semiconductor process recipe data may include data related to the semiconductor process executed in the substrate processing apparatus 110. Specifically, the semiconductor process recipe data may include at least a portion of the semiconductor process flow data executed in the substrate processing apparatus 110 and the parameter data required for the plasma cleaning process executed in the substrate processing apparatus 110. Electronic device 120 can monitor the operating state of substrate processing apparatus 110 and process the required data in accordance with the operating state of substrate processing apparatus 110 and the semiconductor process recipe data.

[0064] The substrate processing apparatus 110 and its operation method according to an embodiment of the present invention perform a plasma cleaning process on the substrate based on the optimal distance between the baffle 112 and the movable chuck 114 and the optimal angle for providing plasma, thereby improving the cleaning effect on contaminants remaining on the substrate.

[0065] In addition, the substrate processing apparatus 110 and its operation method according to an embodiment of the present invention perform plasma-based substrate surface treatment while performing a dry cleaning process, thereby improving the adhesion between the wafer and the substrate and improving the yield of the packaging process.

[0066] On the other hand, in FIG1, the substrate processing apparatus 110 and the electronic device 120 are shown as separate configurations, but this is only one embodiment according to the present invention and does not limit the form of the substrate processing system 10 according to the present invention. Specifically, as shown in FIG1, the substrate processing apparatus 110 and the electronic device 120 can be electrically connected to each other or wirelessly connected. When the substrate processing apparatus 110 and the electronic device 120 are wirelessly connected, the substrate processing apparatus 110 and the electronic device 120 may each include a communication module for communication. Alternatively, the electronic device 120 may also be implemented as included in the substrate processing apparatus 110.

[0067] On the other hand, although the substrate processing system 10 is shown in FIG. 1 as including a substrate processing apparatus 110 and an electronic device 120, this is only one embodiment of the present invention and does not limit the form of the substrate processing system 10 according to the present invention. Specifically, in some embodiments, the substrate processing system 10 may include a plurality of substrate processing apparatuses 110 and at least one electronic device 120. When the substrate processing system 10 includes a plurality of substrate processing apparatuses 110 and an electronic device 120, the plurality of substrate processing apparatuses 110 may be controlled by one electronic device 120, and when the substrate processing system 10 includes a plurality of substrate processing apparatuses 110 and a plurality of electronic devices 120, each of the plurality of substrate processing apparatuses 110 may be controlled by an electronic device 120 corresponding to each of the plurality of substrate processing apparatuses 110.

[0068] FIG2 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

[0069] FIG2 can be described with reference to FIG1 above. The substrate processing apparatus 110 in FIG2 may include a plasma source 111, a baffle 112, a plasma outlet 113, a movable chuck 114, an RF bias module 115, a distance measurement sensor (not shown), and a control circuit (not shown). Although the distance measurement sensor (not shown) and the control circuit (not shown) are not shown in FIG2, the distance measurement sensor (not shown) and the control circuit (not shown) in FIG2 can be described with reference to FIG1.

[0070] The plasma source 111 can generate plasma PL under the control of a control circuit (not shown) and can irradiate the plasma PL onto the substrate W. The plasma PL irradiated onto the substrate W can be provided to the substrate W after passing through the baffle 112.

[0071] The baffle 112 can adjust the flow of plasma PL under the control of a control circuit (not shown), so that plasma PL is supplied to the substrate W. The baffle 112 may include a patterned layer PT1 for passing plasma PL, and the patterned layer PT1 can adjust the angle A of the plasma supplied to the substrate. For example, the angle A of the plasma supplied to the substrate may be perpendicular to the upper end of the substrate W.

[0072] The movable chuck 114 can move under the control of a control circuit (not shown) and can support the substrate W. As the movable chuck 114 moves under the control of the control circuit (not shown), the distance d between the baffle and the movable chuck can be adjusted. In some embodiments, the movable chuck 114 can move under the control of the control circuit (not shown) to correspond to an optimal distance. Wherein, as described below in conjunction with FIG. 5, the optimal distance can be determined based on the distance between the wafer and the substrate W.

[0073] Plasma outlet 113 can refer to a channel that discharges plasma PL used for substrate processing to the outside under the control of a control circuit (not shown). Figure 2 shows two plasma outlets 113 connected to external outlets OUTLET1 and OUTLET2, but this is only an example, and the technical concept of the present invention is not limited thereto. The number of plasma outlets 113 connected to the outside can be 1, 3, 4, N (but N is a natural number), etc.

[0074] The RF bias module 115 can apply an RF bias voltage RF to the moving chuck 114 under the control of a control circuit (not shown). Applying the RF bias voltage RF to the moving chuck 114 by the RF bias module 115 can improve the linearity of supplying plasma PL to the substrate.

[0075] The control circuit (not shown) can be any circuit that controls the operation of the plasma source 111, baffle 112, plasma outlet 113, moving chuck 114, RF bias module 115, and distance measurement sensor (not shown). However, this is merely exemplary, and the control circuit (not shown) can be any circuit of at least one of the plasma source 111, baffle 112, plasma outlet 113, moving chuck 114, RF bias module 115, and distance measurement sensor (not shown).

[0076] Figure 3 is a diagram illustrating the plasma cleaning process according to an embodiment of the present invention.

[0077] FIG3 can be described with reference to FIG1 and FIG2. The substrate W in FIG3 can be a substrate W on which the wafer C is bonded by a bonding process. For example, the wafer C can be bonded to the top of the substrate W by a metal alloy called solder S.

[0078] In this invention, the distance BG between the wafer C and the substrate W can be called the bond gap. When the bond gap is greater than 0 and less than 30 μm, it can be called the low bond gap.

[0079] Due to any process prior to the bonding process or plasma cleaning process, contaminant CT may be present on the upper end of the substrate W. For example, contaminant CT may be flux used to remove oxides from the surface of the substrate W during the bonding process.

[0080] The plasma source 111 described above in conjunction with Figures 1 and 2 can generate a high-energy and highly reactive plasma PL, which can then irradiate the substrate W. The plasma PL irradiated onto the substrate W can pass through the baffle 112 and be provided to the upper end of the substrate W, where it can physically collide with or chemically react with contaminants CT remaining on the upper end of the substrate W, thereby removing the contaminants CT. In this way, the substrate processing apparatus 110 can remove contaminants CT from substrate W with a low bond gap.

[0081] FIG4 is a sequence diagram showing the operation method of a substrate processing apparatus according to an embodiment of the present invention.

[0082] Figure 4 can be explained with reference to Figures 1 to 3 above.

[0083] In step S110, the substrate processing apparatus 110 can place the substrate W on the upper end of the movable chuck 114. In some embodiments, the substrate processing apparatus 110 can place the substrate W, which has at least one wafer C bonded to it and contains contaminant CT, on the upper end of the movable chuck 114 through a bonding process. The substrate W can be placed on the upper end of the movable chuck 114 in various ways, such as vacuum adsorption, electrostatic adsorption, mechanical clamping, or magnetic adsorption.

[0084] In step S120, the substrate processing apparatus 110 can measure the distance BG between the wafer C and the substrate W, and generate substrate state data related to the distance BG between the wafer C and the substrate W. For example, the substrate processing apparatus 110 can use the distance measurement sensor 116 to measure the distance BG between the wafer C and the substrate W, and generate substrate state data related to the distance BG between the wafer C and the substrate W. The substrate state data may include information about the substrate state, such as the thickness of the substrate, the physical properties of the substrate, etc.

[0085] In step S130, the substrate processing apparatus 110 can obtain the optimal distance between the baffle 112 and the movable chuck 114 determined based on the substrate state data.

[0086] For example, after step S120, the electronic device 120 may receive substrate state data from the substrate processing apparatus 110. As described below with reference to FIG5, the electronic device 120 may perform a simulation based on the substrate state data and determine the optimal distance between the baffle 112 and the movable chuck 114 based on the simulation results. The electronic device 120 may generate optimal distance data corresponding to the optimal distance, and the substrate processing apparatus 110 may receive the optimal distance data from the electronic device 120 and obtain the optimal distance between the baffle 112 and the movable chuck 114.

[0087] In step S140, the substrate processing apparatus 110 can move the movable chuck 114 so that the distance d between the baffle 112 and the movable chuck 114 corresponds to the optimal distance. Specifically, the control circuit 117 of the substrate processing apparatus 110 can move the movable chuck 114 so that it corresponds to the optimal distance obtained in step S130.

[0088] In step S150, the substrate processing apparatus 110 can irradiate the substrate W with plasma PL. The plasma source 111 can irradiate the substrate processing apparatus 110 with plasma PL, and the plasma PL can pass through the baffle 112 and be provided to the substrate W.

[0089] In some embodiments, the operation method of the substrate processing apparatus 110 may further include the step of applying an radio frequency bias voltage RF to the movable chuck 114. Applying an radio frequency bias voltage RF to the movable chuck 114 can improve the linearity of the plasma PL supplied to the substrate W.

[0090] FIG5 is a sequence diagram illustrating the operation method of an electronic device according to an embodiment of the present invention.

[0091] Figure 5 can be explained with reference to Figures 1 to 4 above.

[0092] In step S210, the electronic device may receive substrate state data. The substrate state data may include information about the state of the substrate, such as the distance BG between the wafer C and the substrate W, the thickness of the substrate, and the physical properties of the substrate.

[0093] In step S220, the electronic device 120 performs a plasma cleaning process simulation based on the substrate state data, thereby obtaining residual contaminant data.

[0094] For example, the simulation module 121 of the electronic device 120 can adjust the parameters required in the simulation based on substrate state data, such as the distance BG between the wafer C and the substrate W, the thickness of the substrate, and the physical properties of the substrate. Furthermore, the simulation module 121 can perform a plasma cleaning process simulation by adjusting the distance d between the baffle 112 and the moving chuck 114 in the simulation. After the plasma cleaning process simulation is completed, the electronic device 120 stores the dimensions of the contaminant CT remaining on the substrate W in the memory 122, thereby obtaining residual contaminant data based on the distance d between the baffle 112 and the moving chuck 114.

[0095] In step S230, the electronic device 120 can determine the optimal distance between the baffle 112 and the movable chuck 114 based on residual contaminant data. For example, after the plasma cleaning process simulation is completed, the electronic device 120 can determine the optimal distance d between the baffle 112 and the movable chuck 114 as the case where the size of the residual contaminant CT on the substrate W in the simulation is minimized.

[0096] In some embodiments, steps S220 and S230 can be executed using an artificial intelligence model. For example, the memory 122 of the electronic device 120 can store an artificial intelligence model that has been learned from parameters required in simulations, such as the distance BG between the wafer C and the substrate W, the thickness of the substrate W, and the physical properties of the substrate W, to perform the plasma cleaning process. The artificial intelligence model can be, for example, a known artificial intelligence model such as a convolutional neural network or a recurrent neural network. The electronic device 120 uses the artificial intelligence model to register substrate state data into the artificial intelligence model, thereby determining the optimal distance between the baffle 112 and the moving chuck 114.

[0097] In step S240, the electronic device 120 can provide optimal distance data corresponding to the optimal distance to the substrate processing device 110. The substrate processing device 110 can receive the optimal distance data and obtain the optimal distance between the baffle 112 and the movable chuck 114.

[0098] FIG6 is a cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

[0099] FIG6 can be described with reference to FIG1 and FIG2 above. The substrate processing apparatus 210 in FIG6 may include a plasma source 211, a baffle 212, a plasma outlet 213, a moving chuck 214, an RF bias module 215, a distance measurement sensor (not shown), an angle measurement sensor (not shown), and a control circuit (not shown). The content that is repeated in FIG2 is omitted in FIG6.

[0100] In FIG. 6, the baffle 212 can adjust the flow of plasma PL under the control of a control circuit (not shown) to provide plasma PL to the substrate W. The baffle 212 may include a patterned layer PT2 for allowing plasma PL to pass through, and the patterned layer PT2 can adjust the angle A of the plasma provided to the substrate. For example, the angle A of the plasma provided to the substrate may be greater than 0° and less than or equal to 90°.

[0101] If not only the distance d between the baffle 112 and the movable chuck 214 is adjusted, but also the angle A of the plasma supplied to the substrate is adjusted, more precise control can be achieved compared to the case where only the distance d between the baffle 212 and the movable chuck 214 is adjusted. For example, the control circuit (not shown) can control the baffle 212 so that the plasma PL is supplied to the substrate W at 30°, 45°, 60°, and 90°. As described below in conjunction with FIG8, the electronic device 120 can determine the optimal angle of the plasma PL supplied to the substrate W based on substrate state data.

[0102] For example, when the electronic device 120 determines the optimal angle to be 30°, the electronic device 120 can provide the optimal angle data corresponding to 30° to the substrate processing apparatus 210. The substrate processing apparatus 210 can obtain the optimal angle based on the optimal angle data, and the control circuit (not shown) can use an angle measurement sensor (not shown) to control the baffle 212 so that the plasma PL is provided to the substrate W at 30°. In this way, compared to the case where only the distance d between the baffle 212 and the moving chuck 214 is adjusted but the angle A of the plasma PL provided to the substrate W is fixed, the contaminant CT can be removed more effectively.

[0103] FIG7 is a sequence diagram showing the operation method of a substrate processing apparatus according to another embodiment of the present invention.

[0104] FIG7 can be explained with reference to FIG1 to FIG6 above. The content repeated in FIG4 is omitted in FIG7. Unlike FIG4, FIG7 shows the case where the distance d between the baffle 212 and the movable chuck 214 is adjusted while the angle A of the plasma PL supplied to the substrate W is also adjusted.

[0105] In step S310, the substrate processing apparatus 210 may place the substrate W on the upper end of the movable chuck 214. In some embodiments, the substrate processing apparatus 210 may place the substrate W, which has at least one wafer C bonded by a bonding process and contains contaminant CT, on the upper end of the movable chuck 214.

[0106] In step S320, the substrate processing apparatus 210 can measure the distance BG between the wafer C and the substrate W, and generate substrate state data related to the distance BG between the wafer C and the substrate W.

[0107] In step S330, the substrate processing apparatus 210 can obtain the optimal distance between the baffle 212 and the movable chuck 214 determined based on the substrate state data.

[0108] For example, as described above in conjunction with FIG4, the electronic device 120 can determine the optimal distance between the baffle 212 and the movable chuck 214 based on substrate state data. The substrate processing apparatus 210 receives the optimal distance data from the electronic device 120, thereby obtaining the optimal distance between the baffle 212 and the movable chuck 214.

[0109] In step S340, the substrate processing device 210 can move the movable chuck 214 so that the distance d between the baffle 212 and the movable chuck 214 corresponds to the optimal distance.

[0110] In step S350, the substrate processing apparatus 210 can obtain the optimal angle determined based on the substrate state data. For example, the electronic device can determine the optimal angle of the plasma PL provided to the substrate W based on the substrate state data generated in step S320.

[0111] As described below in conjunction with FIG8, the electronic device 120 can perform a plasma cleaning process simulation based on substrate state data, and can determine the optimal angle of the plasma PL provided to the substrate W based on the simulation results. The electronic device 120 can generate optimal angle data corresponding to the optimal angle, and the substrate processing apparatus 210 can receive the optimal angle data from the electronic device 120 and obtain the optimal angle of the plasma PL provided to the substrate W.

[0112] In step S360, the substrate processing apparatus 210 can adjust the angle A of the plasma PL supplied to the substrate W so that the angle A corresponds to an optimal angle. The control circuit (not shown) can adjust the angle A of the plasma PL supplied to the substrate W via the control baffle 212 to correspond to the optimal angle obtained in step S350.

[0113] In step S370, the substrate processing apparatus 210 can provide plasma PL to the substrate W.

[0114] FIG8 is a sequence diagram illustrating the operation method of an electronic device according to another embodiment of the present invention.

[0115] FIG8 can be explained with reference to FIG1 to FIG7 above. Unlike FIG5, which shows the determination of the optimal distance between the baffle 112 and the movable chuck 114, FIG8 shows the determination of the optimal angle of the plasma PL provided to the substrate W.

[0116] In step S410, the electronic device 120 may receive substrate state data. The substrate state data may include information about the state of the substrate W, such as the distance BG between the wafer C and the substrate W, the thickness of the substrate W, and the physical properties of the substrate W.

[0117] In step S420, the electronic device 120 performs a plasma cleaning process simulation based on the substrate state data, thereby obtaining residual contaminant data.

[0118] For example, the simulation module 121 in the electronic device 120 can adjust the parameters required in the simulation based on substrate state data, such as the distance BG between the wafer C and the substrate W, the thickness of the substrate W, and the physical properties of the substrate W. Furthermore, the simulation module 121 can perform a plasma cleaning process simulation by adjusting the angle A of the plasma PL supplied to the substrate W in the simulation. After the plasma cleaning process simulation is completed, the electronic device 120 can store the dimensions of the residual contaminants CT on the substrate W in the simulation in the memory 122, thereby obtaining residual contaminant data based on the angle A of the plasma PL supplied to the substrate W.

[0119] In step S430, the electronic device 120 can determine the optimal angle of the plasma PL provided to the substrate W based on the residual contaminant data. For example, after the plasma cleaning process simulation is completed, the electronic device 120 can determine the angle corresponding to the case where the size of the residual contaminant CT on the substrate W is minimized in the simulation as the optimal angle of the plasma PL provided to the substrate W.

[0120] In some embodiments, steps S420 and S430 can be executed using an artificial intelligence model. As described above with reference to FIG5, the memory 122 of the electronic device 120 can store an artificial intelligence model that has been learned from parameters required in simulations, such as the distance BG between the wafer C and the substrate W, the thickness of the substrate W, and the physical properties of the substrate W, to perform the plasma cleaning process. The electronic device 120 uses the artificial intelligence model to register substrate state data into the artificial intelligence model, thereby determining the optimal angle of the plasma PL provided to the substrate W.

[0121] In step S440, the electronic device 120 can provide optimal angle data corresponding to the optimal angle to the substrate processing device 210. The substrate processing device 210 can obtain the optimal angle based on the received optimal angle data.

[0122] The graphs shown in Figures 9a, 9b, and 9c illustrate the plasma PL velocity at different locations. When the plasma PL velocity between wafer C and substrate W is high, the plasma PL with higher kinetic energy can collide with the contaminant CT remaining between wafer C and substrate W. Therefore, the higher the plasma PL velocity between wafer C and substrate W, the smaller the size of the contaminant CT remaining on substrate W in the simulation after the plasma cleaning process simulation is completed.

[0123] Referring to Figures 9a, 9b, and 9c, the plasma PL velocity between the wafer C and the substrate W in Figure 9c can be higher than that in Figure 9a, and the plasma PL velocity between the wafer C and the substrate W in Figure 9b can be higher than that in Figure 9c. Therefore, after the plasma cleaning process simulation is completed, the size of the contaminant CT remaining on the substrate W in the simulation can be reduced sequentially in the order of Figures 9b, 9c, and 9a.

[0124] The electronic device can store the size of the contaminant CT remaining on the substrate W during the simulation in memory 122 after the simulation is completed, and can be used to determine the optimal distance between the baffle 212 and the moving chuck 214 or the optimal angle of the plasma PL provided to the substrate W.

[0125] On the other hand, the embodiments disclosed in this specification can be implemented in the form of a recording medium storing instructions executable by a computer. The instructions can be stored in the form of program code, and when executed by a processor, a program module is generated to perform the actions of the disclosed embodiments. The recording medium can be implemented as a computer-readable recording medium. Computer-readable recording media can include all types of recording media storing instructions that can be decoded by a computer. For example, it can have read-only memory (ROM), random access memory (RAM), magnetic tape, magnetic disk, flash memory, optical data storage device, etc.

[0126] The above description describes specific embodiments for implementing the present invention. The present invention may include not only the above embodiments, but also embodiments that can be easily modified or altered. Furthermore, the present invention may also include various techniques that are easily modified and implemented using the above embodiments. Therefore, the scope of the present invention should not be limited to the above embodiments, but should be determined by the scope of the patent application and those equivalent to the scope of the patent application of the present invention. [Simplified Explanation of the Diagram]

[0024] FIG1 is a block diagram illustrating a substrate processing system according to an embodiment of the present invention.

[0025] FIG2 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

[0026] Figure 3 is a diagram illustrating the plasma cleaning process according to an embodiment of the present invention.

[0027] FIG4 is a sequence diagram showing the operation method of a substrate processing apparatus according to an embodiment of the present invention.

[0028] FIG5 is a sequence diagram illustrating the operation method of an electronic device according to an embodiment of the present invention.

[0029] FIG6 is a cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

[0030] FIG7 is a sequence diagram showing the operation method of a substrate processing apparatus according to another embodiment of the present invention.

[0031] FIG8 is a sequence diagram illustrating the operation method of an electronic device according to another embodiment of the present invention.

[0032] Figures 9a, 9b and 9c are diagrams showing simulation results of an electronic device according to an embodiment of the present invention.

Claims

1. A substrate processing apparatus for performing a plasma cleaning process on a substrate bonded with at least one wafer and containing contaminants, comprising: A movable chuck supports the substrate. A plasma source generates plasma and irradiates the substrate with the plasma; A baffle that regulates the flow of plasma to provide the plasma to the substrate; and control circuitry that moves the movable chuck such that the distance between the baffle and the movable chuck corresponds to an optimal distance, the optimal distance being determined based on the distance between the at least one wafer and the substrate.

2. The substrate processing apparatus as described in claim 1, wherein, The baffle includes a patterned layer for allowing the plasma to pass through, the patterned layer being used to adjust the angle of the plasma supplied to the substrate.

3. The substrate processing apparatus as described in claim 2, wherein, The angle is determined based on the distance between the at least one wafer and the substrate.

4. The substrate processing apparatus as described in claim 2, wherein, The angle is determined such that the plasma is provided vertically to the upper end of the substrate.

5. The substrate processing apparatus as described in claim 1, wherein, The distance between the at least one wafer and the substrate is greater than 0 and less than 30 μm.

6. The substrate processing apparatus as described in claim 1, wherein, The plasma source is an inductively coupled plasma source that uses the magnetic field generated by passing a high-frequency current through a coil to form the plasma.

7. The substrate processing apparatus as described in claim 1, further comprising: The radio frequency bias module applies a radio frequency bias voltage to the moving chuck.

8. A method of operating a substrate processing apparatus, comprising the following steps: placing a substrate having at least one wafer bonded by a bonding process and containing contaminants on the upper end of a movable chuck; measuring the distance between the at least one wafer and the substrate, and generating substrate state data related to the distance between the at least one wafer and the substrate; obtaining an optimal distance between a baffle and the movable chuck determined based on the substrate state data; moving the movable chuck such that the distance between the baffle and the movable chuck corresponds to the optimal distance; and irradiating the substrate with plasma.

9. The method of operating the substrate processing apparatus as described in claim 8, further comprising: The step of obtaining the optimal angle of the plasma provided to the substrate based on the distance between the at least one wafer and the substrate; The step of adjusting the angle of the plasma supplied to the substrate to correspond to the optimal angle.

10. The method of operating the substrate processing apparatus as described in claim 8, further comprising: The step of applying an radio frequency bias voltage to the movable chuck.

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