Dielectric ceramic material, multilayer ceramic capacitor, and manufacturing method thereof

Abstract

A dielectric ceramic material comprises components in a specific ratio. A method for manufacturing a multilayer ceramic capacitor includes forming a multilayer ceramic capacitor using the dielectric ceramic material, wherein a specific sintering temperature can reduce manufacturing costs. The resulting multilayer ceramic capacitor has the advantages of high resistance, high reliability, and high voltage resistance.

Claims

1. A dielectric ceramic material comprising: a first main component, wherein the first main component is BaTiO3; a second main component, wherein the second main component conforms to the general formula Ca(1-x)SrxZr(1-y)TiyO3, where x is 0 to 1 and y is 0 to 1, but excluding y=0, wherein the second main component accounts for 5 to 8 mol% based on the first main component being 100 mol%; and a secondary component comprising: magnesium oxide, accounting for 0.1 to 6 mol%; manganese oxide, accounting for 0.1 to 3 mol%; rare earth oxide, accounting for 0.1 to 3 mol%; and silicon oxide, accounting for 0.01 to 4 mol%, wherein the silicon oxide is SiO2.

2. The dielectric ceramic material as described in claim 1, wherein: The specific surface area of ​​the second principal component is 5 m² / g to 20 m² / g; the specific surface area of ​​the magnesium oxide is 22 m² / g to 55 m² / g; the specific surface area of ​​the manganese oxide is 14 m² / g to 34 m² / g; the specific surface area of ​​the rare earth oxide is 15 m² / g to 25 m² / g; and the specific surface area of ​​the silicon oxide is 30 m² / g to 50 m² / g.

3. The dielectric ceramic material as claimed in claim 2, wherein the specific surface area of ​​the second main component is from 5 m² / g to 13 m² / g.

4. The dielectric ceramic material as described in claim 1, wherein: The magnesium oxide accounts for 1.5 to 5 mol percent; the manganese oxide accounts for 0.3 to 0.6 mol percent; the rare earth oxide accounts for 1.2 to 1.8 mol percent; and the silicon oxide accounts for 0.01 to 2 mol percent.

5. The dielectric ceramic material as claimed in claim 1, wherein the magnesium oxide is selected from the group consisting of MgCO3 and MgO, and the manganese oxide is selected from the group consisting of MnCO3 and Mn2O3.

6. The dielectric ceramic material as claimed in claim 1, wherein the rare earth oxide is selected from the group consisting of Y2O3, Ho2O3, Gd2O3, Dy2O3, Ce2O3, Yb2O3 and Er2O3.

7. A method for manufacturing a multilayer ceramic capacitor, comprising: providing a ceramic slurry comprising a dielectric ceramic material as described in any one of claims 1 to 6; forming a plurality of dielectric layers using the ceramic slurry; forming a plurality of internal electrode layers; alternately laminating the internal electrode layers and the dielectric layers to form a stack; performing a sintering process on the stack to form a multilayer ceramic brick, wherein the sintering process comprises: performing a burn-off step; and performing a sintering step, wherein a sintering temperature in the sintering step is 1260°C to 1310°C; and forming a first end electrode and a second end electrode at two ends of the multilayer ceramic brick, respectively, to obtain a multilayer ceramic capacitor.

8. A method for manufacturing a multilayer ceramic capacitor as claimed in claim 7, wherein the dielectric constant of the multilayer ceramic capacitor is between 1963 and 2769, and the dielectric loss of the multilayer ceramic capacitor is at most 2.9%, wherein the dielectric constant and the dielectric loss are measured at 25°C, at a frequency of 1 kHz and an AC voltage of 1 V.

9. A method for manufacturing a multilayer ceramic capacitor as claimed in claim 7, wherein the insulation resistance of the multilayer ceramic capacitor is at least 26.7 GΩ, and the breakdown voltage of the multilayer ceramic capacitor is at least 679 V, wherein the insulation resistance is measured at 25°C with a DC voltage of 500 V applied, and the breakdown voltage is measured at 25°C with a voltage applied to the multilayer ceramic capacitor at a boost rate of 0.1 kV / s to measure its breakdown voltage.

10. A multilayer ceramic capacitor manufactured by a method of manufacturing a multilayer ceramic capacitor as described in any one of claims 7 to 9, wherein the total thickness of the dielectric layers of the multilayer ceramic capacitor is 5 μm to 60 μm.

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