LED packaging structure

Abstract

An LED packaging structure includes a diffuse reflection layer, two first chips, a second chip, a first color conversion layer, a second color conversion layer, and two packaging electrodes. The two first chips and the second chip are embedded in and surrounded by the diffuse reflection layer. The height of the diffuse reflection layer is greater than or equal to half the height of either the first chip or the second chip. The first color conversion layer covers one of the first chips. The second color conversion layer covers the diffuse reflection layer, the two first chips, the second chip, and the first color conversion layer. The two packaging electrodes are disposed in the diffuse reflection layer and connect to the chip electrodes of the two first chips and the second chip. The wavelengths of the two first chips, the second chip, the first color conversion layer, and the second color conversion layer are different. A portion of the light emitted by the two first chips and the second chip passes through the second color conversion layer, and the other portion passes through the first color conversion layer and the second color conversion layer.

Claims

1. An LED packaging structure, comprising: a diffuse reflection layer; at least two first chips and at least one second chip, the at least two first chips and the at least one second chip being embedded in and surrounded by the diffuse reflection layer, and the height of the diffuse reflection layer being greater than or equal to half the height of the at least two first chips or the at least one second chip, the at least two first chips being blue chips and the at least one second chip being green chips; at least one first color conversion layer covering one of the at least two first chips and doped with green phosphor; a second color conversion layer covering the diffuse reflection layer, the at least two first chips, the at least one second chip and the at least one first color conversion layer, and doped with KSF red phosphor and green phosphor; and two packaging electrodes disposed in the diffuse reflection layer and electrically connected to a plurality of chip electrodes of the at least two first chips and the at least one second chip; wherein, The wavelengths of the at least two first wafers, the at least one second wafer, the at least one first color conversion layer, and the second color conversion layer are different, and part of the light emitted by the at least two first wafers and the at least one second wafer passes through the second color conversion layer, while the other part passes through the first color conversion layer and the second color conversion layer.

2. The LED packaging structure as described in claim 1 further includes a packaging support disposed on the diffuse reflection layer and surrounding the second color conversion layer therein.

3. The LED packaging structure as described in claim 2, wherein the diffuse reflection layer has a first surface and a second surface, the second surface facing away from the first surface, the two packaging electrodes are disposed on the second surface of the diffuse reflection layer, the packaging bracket is stacked on the first surface of the diffuse reflection layer and has an inclined sidewall, and the angle between the inclined sidewall of the packaging bracket and the first surface of the diffuse reflection layer is greater than or equal to 45 degrees and less than or equal to 90 degrees.

4. An LED packaging structure, comprising: a first diffuse reflection layer; at least two first chips and at least one second chip, the at least two first chips and the at least one second chip being embedded in and surrounded by the first diffuse reflection layer, and the height of the first diffuse reflection layer being greater than or equal to half the height of the at least two first chips or the at least one second chip, the at least two first chips being blue chips and the at least one second chip being green chips; at least one first color conversion layer covering one of the at least two first chips and doped with green phosphor; a second color conversion layer covering the first diffuse reflection layer, the at least two first chips, the at least one second chip and the at least one first color conversion layer, and doped with KSF red phosphor and green phosphor; a second diffuse reflection layer stacked on the second color conversion layer; and two packaging electrodes disposed on the first diffuse reflection layer and electrically connected to a plurality of chip electrodes of the at least two first chips and the at least one second chip; wherein... The wavelengths of the at least two first wafers, the at least one second wafer, the at least one first color conversion layer, and the second color conversion layer are different. A portion of the light emitted by the at least two first wafers and the at least one second wafer passes through the second color conversion layer, and another portion passes through the first color conversion layer and the second color conversion layer. At least a portion of the light is reflected by the second diffuse reflection layer and emitted around the second color conversion layer.

5. The LED packaging structure as described in claim 4, wherein the second diffuse reflection layer has two diffuse reflection slopes and a light-emitting top surface, the two diffuse reflection slopes face the first diffuse reflection layer, the light-emitting top surface faces away from the two diffuse reflection slopes, and a first included angle between the two diffuse reflection slopes is greater than or equal to 60 degrees and less than or equal to 180 degrees.

6. The LED packaging structure as described in claim 5, wherein the second color conversion layer has a light-emitting side that connects the first diffuse reflection layer and the second diffuse reflection layer.

7. The LED package structure as described in claim 5, wherein a second angle between each of the diffuse reflection slopes and the normal to the light-emitting top surface is 68 degrees.

8. The LED packaging structure as claimed in claim 4, wherein the second diffuse reflection layer has a plurality of microstructures on the side near one of the at least two first wafers and the at least one second wafer, the cross-sections of the microstructures being inverted triangular, semi-elliptical or semi-circular.

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