Method for depositing a film containing transition metal chalcogen and chalcogen precursor for the same

Abstract

The present invention provides a method for depositing a thin film comprising a transition metal chalcogenide, comprising: injecting a transition metal precursor and a chalcogenide precursor into a reaction chamber; and reacting the transition metal precursor and the chalcogenide precursor to deposit a thin film comprising a transition metal chalcogenide on a substrate; characterized in that the chalcogenide precursor comprises chalcogen-chalcogenide bonds, and the bond dissociation energy of the chalcogen-chalcogenide bonds is 275 kJ / mol or lower.

Description

Technical Field

[0001] This invention relates to a method for depositing thin films containing transition metal chalcogenides and the chalcogen precursors used therein, and more specifically, to a method for depositing thin films containing transition metal chalcogenides that enables uniform deposition of chalcogen films on a substrate at low temperatures and the chalcogen precursors used therein. Prior Technology

[0002] Two-dimensional (2D) materials refer to monolayer materials composed of a single atom or a single compound. Since graphene was first published in 2004, hundreds of materials have been developed, such as graphyne, borophene, germanene, silicane, stanene, phosphorene, boron nitride, transition metal dichalcogenides (TMD), monolayer palladium (Pd), and monolayer rhodium (Rh).

[0003] Transition metal chalcogenides (TMDs), such as molybdenum disulfide (MoS₂), are considered emerging materials for electronic components such as semiconductors. Due to their superior electrical, physical, and chemical properties, they are highly regarded as next-generation semiconductor materials that can overcome the limitations of silicon-based devices.

[0004] In the cultivation of transition metal chalcogenide thin films, currently known methods include metal-chalcogenization, chemical vapor deposition (CVD), and atomic layer deposition (ALD). However, these methods all face challenges in achieving large-area, uniform film growth due to excessively high process temperatures. Therefore, it is essential to develop a technique that can still grow high-quality transition metal chalcogenide thin films over large areas at low temperatures. Existing technical literature

[0005] (Patent Document 0001) 1. Korean Patent Publication KR 10-2023-0151672 A

[0006] (Non-patent literature 0001) 1. Nature, 2015, Vol. 520, pp. 656-660 (Non-patent document 0002) 2. Science Advances, July 26, 2019, Vol. 5, No. 7 Summary of the Invention

[0007] Therefore, the problem to be solved by the present invention is to provide a novel method for depositing thin films containing transition metal chalcogenides that takes into account the material properties of chalcogen precursors, and the chalcogen precursors used therein.

[0008] To address the aforementioned issues, the present invention provides a method for depositing a thin film containing a transition metal chalcogenide, characterized by comprising the following steps: injecting a transition metal precursor and a chalcogenide precursor into a reaction chamber; and reacting the transition metal precursor with the chalcogenide precursor to deposit a thin film containing a transition metal chalcogenide on a substrate; wherein the chalcogenide precursor contains chalcogenide-chalcogenide bonds, and the bond dissociation energy of the chalcogenide-chalcogenide bonds is 275 kJ / mol or lower.

[0009] In one embodiment of the present invention, the sulfide precursor has the following structure:

[0010] R1-Xn-R1

[0011] (In the above formula, X is a chalcogenide, R1 is hydrogen or an alkyl group with 1 to 4 carbon atoms, and n is 2 to 4.)

[0012] In one embodiment of the present invention, the sulfide element of the sulfide precursor is any one of S, Te and Se.

[0013] In one embodiment of the present invention, the sulfur precursor is dimethyl disulfide or dimethyl diselenide.

[0014] In one embodiment of the present invention, the deposition method of the thin film containing transition metal chalcogenides further includes supplying an organometallic promoter to the reaction chamber, so that the transition metal precursor and the chalcogenide precursor react together with the organometallic promoter to deposit a thin film containing transition metal chalcogenides on the substrate.

[0015] In one embodiment of the present invention, the organometallic accelerator is an organoalkali metal having a vapor pressure of 0.1 mmHg or higher at room temperature.

[0016] In one embodiment of the present invention, the organometallic accelerator comprises any one of sodium propionate, sodium formate, sodium tert-butoxide, and potassium tert-butoxide.

[0017] In one embodiment of the present invention, the decomposition temperature of the sulfide precursor is 500°C or lower.

[0018] In one embodiment of the present invention, the transition metal precursor comprises any one of a transition metal halide, a transition metal oxyhalide, or a transition metal carbonyl compound.

[0019] In one embodiment of the present invention, the transition metal precursor is any one of MoO₂Cl₂, MoCl₅, WOCl₄, WCl₅, Mo(CO)₆, and W(CO)₆.

[0020] Furthermore, the present invention provides a chalcogenide precursor for manufacturing a thin film containing a transition metal chalcogenide, characterized in that the chalcogenide precursor has the following structure:

[0021] R1-Xn-R1

[0022] (In the above formula, X is a chalcogenide, R1 is hydrogen or an alkyl group with 1 to 4 carbon atoms, and n is 2 to 4.)

[0023] In one embodiment of the present invention, the sulfide element of the sulfide precursor is any one of S, Te and Se.

[0024] The sulfur precursor is dimethyl disulfide or dimethyl diselenide.

[0025] In one embodiment of the present invention, the decomposition temperature of the sulfide precursor is 500°C or lower, and its vapor pressure is 0.05 mmHg or higher at 25°C.

[0026] This invention utilizes a chalcogenide precursor with low bond dissociation energy in the deposition process, enabling the deposition of transition metal chalcogenide films at lower temperatures compared to existing processes. This allows for the deposition of transition metal chalcogenide films with superior properties onto various substrates. Simple Explanation of the Diagram

[0027] Figure 1 is a step diagram of a method for depositing a thin film containing a transition metal chalcogenide according to an embodiment of the present invention. Figure 2 shows the analysis results of Examples 1 and 2 from left to right, and Figure 3 shows the analysis results of the deposition layer of Comparative Example 2. Figure 4 shows the analysis results for Examples 1 and 2, from left to right. Figures 5 to 8 show the analysis results of Examples 1 to 3 and Comparative Example 1, respectively. Figures 9 and 10 show the analysis results for Examples 1 and 2, respectively. Figure 11 is a schematic diagram of the components in this experimental example and a summary diagram of the component characteristics. Figure 12 is the IV diagram of the components. Figure 13 is a schematic diagram of the components in this experimental example and a summary diagram of the component characteristics. Figures 15 to 17 show the analytical results based on the use of accelerators. Implementation

[0028] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0029] Before describing the invention in detail, the terms or vocabulary used in this specification should not be unconditionally limited to their usual or dictionary meanings. The inventors of this invention may appropriately define and use various terms and concepts in order to best illustrate their invention.

[0030] Furthermore, these terms or terms should be understood to be interpreted as meanings and concepts consistent with the technical ideas of this invention.

[0031] That is, the terminology used in this specification is only for illustrating preferred embodiments of the present invention and is not intended to specifically limit the content of the present invention.

[0032] It should be understood that these terms are defined in consideration of the various possibilities of the present invention.

[0033] Furthermore, in this specification, unless explicitly indicated otherwise in the context, a singular representation may include a plural representation.

[0034] Furthermore, it should be understood that even when expressed as plural, it can still contain the meaning of singular.

[0035] Throughout this specification, if a constituent element is described as "containing" other constituent elements, unless otherwise stated, it may mean that no other constituent elements are excluded, but rather that any other constituent elements may be further included.

[0036] Furthermore, if it is stated that a certain constituent element "exists within or is connected to other constituent elements", then that constituent element can be directly connected to or in contact with other constituent elements.

[0037] In addition, it can be configured to maintain a certain distance between them. In the case of maintaining a certain distance between them, there can be a third constituent element or means for fixing or connecting the constituent element to other constituent elements.

[0038] At the same time, it should be understood that the description of the third constituent element or means may be omitted.

[0039] Conversely, if a constituent element is described as being "directly connected" or "directly in contact" with other constituent elements, it should be understood that there is no third constituent element or means.

[0040] Similarly, other expressions explaining the relationship between the constituent elements, such as "between ~" and "closely adjacent ~", or "~adjacent" and "directly ~adjacent", should also be interpreted as having the same meaning.

[0041] Furthermore, in this specification, terms such as "one side," "other side," "one side of the body," "other side," "first," and "second" are used to clearly distinguish one constituent element from other constituent elements.

[0042] However, it should be understood that the meaning of this constituent element should not be limited by such terminology.

[0043] In the accompanying drawings of this specification, the dimensions, positions, and connections of the constituent elements constituting the present invention may be exaggerated, reduced, or omitted in order to fully and clearly convey the idea of ​​the present invention or for the convenience of explanation. Therefore, the proportions or scaling may not be precise.

[0044] Furthermore, in describing the present invention below, if it is determined that the essence of the invention may be unnecessarily obscured, for example, detailed descriptions of known technologies that include conventional techniques may be omitted.

[0045] To address the aforementioned problems, this invention utilizes a chalcogenide precursor having at least one chalcogenide-chalcogenide bond with a bond dissociation energy of 275 kJ / mol or lower in the deposition process. This allows for the growth of uniform transition metal chalcogenide films even at temperatures of 500°C or lower.

[0046] According to one embodiment of the present invention, the sulfide precursor has the structure of the following formula (1).

[0047] R1-Xn-R1 (1)

[0048] In the above formula, X is a sulfide element, R1 is hydrogen or an alkyl group having 1 to 4 carbon atoms, and n is 2 to 4.

[0049] In the aforementioned chemical formula, XX, representing chalcogenide-chalcogenide bonds, is at least one or more, with a bond dissociation energy of 275 kJ / mol or lower. This invention utilizes these material properties to enable the relatively high partial pressure chalcogenide radicals to participate in the reaction at temperatures of 500°C or lower (compared to existing processes) during the synthesis of high-quality transition metal chalcogenides.

[0050] In one embodiment of the present invention, the sulfide element of the sulfide precursor is any one of S, Te, and Se, and the precursor according to one embodiment of the present invention has at least one or more sulfide-sulfide bonds as described above.

[0051] Although one embodiment of the present invention uses dimethyl disulfide or dimethyl diselenide as such precursors, the scope of the present invention is not limited thereto.

[0052] The present invention will be described in more detail below with reference to the drawings and embodiments.

[0053] Figure 1 is a step diagram of a method for depositing a thin film containing a transition metal chalcogenide according to an embodiment of the present invention.

[0054] Referring to Figure 1, a deposition method according to one embodiment of the present invention includes the step of injecting a transition metal precursor and a chalcogenide precursor into a reaction chamber.

[0055] This invention has found that, compared to transition metal precursors, the growth temperature and results are significantly affected by the bond dissociation energy of the aforementioned chalcogen precursors. Therefore, the transition metal precursors can be known precursors of transition metals such as Mo, W, Ta, V, Nb, Ti, Zr, Hf, Tc, Re, Pd, and Pt, i.e., any one of transition metal halides, transition metal oxyhalides, and transition metal carbonyl compounds, and all of these fall within the scope of this invention.

[0056] For example, such transition metal precursors can be any one of MoO₂Cl₂, MoCl₅, WOCl₄, WCl₅, Mo(CO)₆, or W(CO)₆.

[0057] The deposition method according to the present invention includes a step of reacting the transition metal precursor and the chalcogenide precursor at a temperature of 500°C or lower to deposit a thin film comprising a transition metal chalcogenide on a substrate. In this step, an organometallic promoter, such as an organoalkali metal, can be applied to the deposition process.

[0058] The table below shows the bond dissociation energies of the chalcogen precursors used in the embodiments and comparative examples of this invention.

[0059] [Table 1]

[0060] substance RS bond dissociation energy (kJ / mol) (R is H or alkyl) SS bond dissociation energy (kJ / mol) HSH 384.1 N / A HSSH 309.4 271 HSSSH 304.7 221.9 HSSSSH 298 219 CH3-S-CH3 309.2 N / A CH3-SS-CH3 246.7 270.5 CH3-SSS-CH3 258.8 215.3 CH3-SSSS-CH3 247.8 221.9

[0061] Referring to the results in Table 1 above, the chalcogen precursors according to the present invention have at least one or more chalcogen-chalcogen bonds, and their bond dissociation energy is less than 275 kJ / mol. Therefore, even at lower process temperatures (500°C or lower) compared to existing processes, the required precursor decomposition can still occur, thereby generating chalcogen free radicals that can participate in the synthesis of high-quality two-dimensional transition metal chalcogenide crystals, as will be explained in more detail in the following experimental examples.

[0062] Furthermore, the sulfide precursors according to the present invention have a vapor pressure of 0.05 mmHg or higher at room temperature (25°C). For example, dimethyltetrasulfide having sulfide-sulfide bonds has a vapor pressure of 0.051 mmHg at room temperature. Thus, the sulfide precursors supplied in the gas phase vaporize at a temperature of 500°C or lower, and the sulfide-sulfide bonds decompose.

[0063] In the deposition step, an organoalkali metal having a vapor pressure of 0.1 mmHg or higher at room temperature can be used. Such organoalkali metals can be organometallic compounds such as sodium propionate, sodium formate, sodium tert-butoxide, and potassium tert-butoxide.

[0064] In one embodiment of the present invention, sodium propionate (SP) is supplied to the deposition chamber as an organometallic promoter. Thereby, the transition metal precursor and chalcogenide precursor react together with sodium propionate in the chamber to deposit a thin film containing a transition metal chalcogenide on a substrate.

[0065] In particular, according to one embodiment of the present invention, the accelerator sodium propionate decomposes at a temperature of 500°C or lower and vaporizes under conditions similar to those of transition metal chalcogenides to promote uniform film growth.

[0066] Example

[0067] This invention utilizes MOCVD to synthesize four types of high-quality transition metal chalcogenide thin films under the following conditions and methods. The transition metal precursors used are Mo(CO)₆ and W(CO)₆, the chalcogen precursors are (CH₃)₂S₂ and (CH₃)₂Se₂, the organometallic promoter is SP, the carrier gas is Ar, and O₂ and H₂ are simultaneously injected.

[0068] The flow rate of the precursors was regulated using a mass flow controller (MFC) in a Bubbler system. The transition metal precursors were heated to 60°C, and the pressure of all precursors was maintained at 800 Torr. Growth conditions were achieved using Mo(CO)₆ 1.0 sccm, W(CO)₆ 3.5 sccm, (CH₃)₂S₂ 2.0 sccm, (CH₃)₂Se₂ 2.5 sccm, SP 10 sccm, O₂ 1 sccm, and H₂ 10 sccm.

[0069] The synthesis reaction chamber was heated to 400°C within 50 minutes under an Ar atmosphere of 10 sccm and H₂ atmosphere of 10 sccm. Transition metal precursors, chalcogenide precursors, SP, O₂, and H₂ were simultaneously injected into the 400°C reaction chamber to synthesize transition metal chalcogenide films over 4 hours. After synthesis, the synthesis reaction chamber was slowly cooled to room temperature over 1 hour.

[0070] Comparative example

[0071] As a comparative example, except that diethyl selenide (DESe) and diethyl sulfide (DES) with a single sulfide atom as sulfide elements are used as sulfide precursors, thin films are deposited in the same manner as in the examples.

[0072] Tables 2 and 3 below summarize the conditions for the embodiments and comparative examples, respectively.

[0073] [Table 2]

[0074] experiment Transition metal precursors Sulfur precursors Process temperature (°C) Accelerator Example (1) MoS₂ Mo(CO)6 DMDS 400 SP Example (2) WSe₂ W(CO)6 DMDSe 425 SP Example (3) MoSe₂ Mo(CO)6 DMDSe 450 SP

[0075] [Table 3]

[0076] experiment Transition metal precursors Sulfur precursors Process temperature (°C) Accelerator Comparative Example (1) MoSe₂ Mo(CO)6 DMDSe 450 SP Comparative Example (2) WSe₂ W(CO)6 DMDSe 425 SP

[0077] Experimental Example

[0078] Whether or not sedimentation occurs

[0079] In Comparative Example 1, MoSe₂ did not grow. This strongly demonstrates that the structure of the chalcogenide precursor has a significant impact on the actual film growth.

[0080] Thin film analysis results

[0081] Scanning electron microscopy (SEM) analysis results

[0082] Figure 2 shows the analysis results of Examples 1 and 2 from left to right, and Figure 3 shows the analysis results of the deposition layer of Comparative Example 2.

[0083] The left side of Figure 2 shows a SEM image of MoS₂ crystals grown on the substrate, and the right side shows a SEM image of WSe₂ crystals. As the deposition time increases, the gaps between the crystals are filled, forming a single-layer to double-layer transition metal chalcogenide film on the substrate.

[0084] Figure 3 shows a SEM image of WSe₂ crystals, which differ from the transition metal chalcogenide crystals in Figure 2. It can be confirmed that they are formed in the form of vertically stacked multilayer crystals.

[0085] Referring to Figures 2 and 3, it can be seen that when a chalcogenide precursor with chalcogenide bonds is used in the deposition process, the thin film is uniformly deposited and grown on the substrate. In particular, in the case of Comparative Example 2, although WSe₂ can be synthesized, it is difficult to form a thin film on the substrate because the film grows in a multilayer crystal form.

[0086] AFM analysis results

[0087] Figure 4 shows the analytical results for Examples 1 and 2 from left to right. In Figure 4, the transition metal chalcogenide thin films confirmed to have grown in Figure 2 are observed using atomic force microscopy (AFM). The left side of Figure 4 shows the AFM image of MoS₂, and the right side shows the AFM image of WSe₂. The two images confirm that monolayer to bilayer transition metal chalcogenide crystals have been uniformly deposited.

[0088] Examining the above results, when the chalcogen precursors of the present invention are applied to the deposition process, it can be confirmed that MoS₂ and WSe₂ crystals with a size of 100~200 nm and located in positions between monolayer and bilayer can be grown.

[0089] Raman spectroscopy and photoluminescence (PL) spectroscopy analysis results

[0090] Figures 5 to 8 show the analysis results of Examples 1 to 3 and Comparative Example 1, respectively.

[0091] The upper part of Figure 5 shows the Raman spectrum of the MoS₂ thin film deposited in Example 1, and the lower part shows the PL spectrum. In the Raman spectrum, peaks were observed near the E₂g peak at 385 cm⁻¹ and the A₁g peak at 407 cm⁻¹ of MoS₂, thus confirming the deposition of MoS₂. The presence of an exciton peak near 1.86 eV and a good full width at half maximum (FWHM) of 71 meV in the PL spectrum confirms the deposition of a monolayer to bilayer MoS₂ thin film.

[0092] The upper part of Figure 6 shows the Raman spectrum of the WSe₂ thin film deposited in Example 2, and the lower part shows the PL spectrum. The peak at 250 cm⁻¹ observed in the Raman spectrum represents the E_g intrinsic vibrational mode of WSe₂, indicating that the synthesized material is WSe₂. The presence of an exciton peak near 1.61 eV and a good full width at half maximum (FWHM) of 98 meV in the PL spectrum confirms the deposition of a high-quality WSe₂ thin film with a single-layer to bilayer thickness.

[0093] Figure 7 shows the Raman spectrum of the MoSe₂ thin film deposited in Example 3. In the Raman spectrum, peaks were observed at the A₁g peak position of 242 cm⁻¹ and the E₂g peak position of 285 cm⁻¹ of MoSe₂, thus confirming that MoSe₂ has been deposited.

[0094] Figure 8 shows the Raman spectrum of the substrate of Comparative Example 1. No peaks were observed at the A₁g peak position of 242 cm⁻¹ and the E₂g peak position of 285 cm⁻¹ for MoSe₂, thus confirming that MoSe₂ was not deposited.

[0095] X-ray photoelectron spectroscopy (XPS) analysis

[0096] Figures 9 and 10 show the analysis results for Examples 1 and 2, respectively. In the case of the comparative example, XPS analysis could not be performed because the film itself did not grow.

[0097] Figure 9 shows the XPS analysis results of the transition metal chalcogenide thin film grown in Example 1, confirming the bonding energies of the 3d orbitals of Mo and the 2s and 2p core electrons of S. The spectrum shows peaks corresponding to the MoS₂ bonding energies, confirming that the elemental ratio of Mo to S in the MoS₂ thin film is Mo:S = 1:2.

[0098] Figure 10 shows the XPS analysis results of the transition metal chalcogenide film grown in Example 2, confirming the 4f orbitals of W and the 3d orbitals of Se. The spectrum shows the peak corresponding to the WSe₂ bond energy, and confirms that the elemental ratio of W to Se in the WSe₂ film is W:Se = 1:2.03.

[0099] Feature analysis results

[0100] MoS₂ thin film

[0101] This experimental example confirms the performance of the n-MOSFET fabricated using the MoS₂ thin film grown at low temperature in Example 1 as the channel material.

[0102] Figure 11 is a schematic diagram of the components in this experimental example and a summary diagram of the component characteristics. Figure 12 is the IV diagram of the components.

[0103] The middle image of Figure 11 is a schematic diagram of a device fabricated using the MoS₂ transition metal chalcogenide thin film deposited according to Example 1. The left side shows an optical microscope image of the device array. The substrate is a highly doped silicon wafer covered with a 100 nm silicon dioxide (SiO₂) insulating layer and operates with a bottom gate. The source and drain electrodes use Bi / Au, and Al₂O₃ is used as the encapsulating layer. The right side shows the average and maximum values ​​of Ion / Ioff ratio, Ion / Wch, electron mobility (μ), and subthreshold swing (SS) measured in each device array in tabular form.

[0104] Figure 12 is the Isd-Vg plot, which measures the change in current density based on the gate voltage (Vg) under the condition of applying a 0.5V drain voltage. The channel length (Lch) of the device is 5μm and the channel width (Wch) is 20μm.

[0105] Referring to Figures 11 and 12, it can be seen that it exhibits excellent characteristics such as a maximum conduction current density of 1.47 μAμm⁻¹ and a charge mobility of 11.8 cm²V⁻¹s⁻¹.

[0106] WSe₂ film

[0107] This experimental example confirms the performance of the p-MOSFET fabricated using the WSe₂ thin film grown at low temperature in Example 2 as the channel material.

[0108] Figure 13 is a schematic diagram of the components in this experimental example and a summary diagram of the component characteristics. Figure 14 is the IV diagram of the components.

[0109] The middle image of Figure 13 is a schematic diagram of a device fabricated using the WSe₂ transition metal chalcogenide thin film deposited according to Example 2. The left side shows an optical microscope image of the device array. The substrate used is a silicon wafer covered with a 100 nm silicon dioxide (SiO₂) insulating layer and operated with a bottom gate. The source and drain electrodes are Pt / Au. The right side shows the average and maximum values ​​of Ion / Ioff ratio, Ion / Wch, electron mobility (μ), and subthreshold swing (SS) measured in each device array in tabular form.

[0110] Figure 14 shows the current density (Ids / Wch) based on the gate voltage (Vg), measured with a 0.5V drain voltage applied. The channel length (Lch) of the device is 5μm, and the channel width (Wch) is 20μm.

[0111] Referring to Figures 13 and 14, it can be seen that the electrical characteristics exhibit a maximum conduction current density of 0.0389 μAμm⁻¹ and a charge mobility of 0.029 cm²V⁻¹s⁻¹.

[0112] Figures 15 to 17 show the film quality results observed using SEM based on the type of accelerator and whether or not it was used.

[0113] Figure 15 shows SEM images of MoS₂ deposited without a promoter on the left, SEM images of MoS₂ deposited using SP in the middle, and SEM images of MoS₂ deposited using sodium tributoxy (STBO) on the right. MoS₂ crystal growth is confirmed in all three images. However, it is confirmed that with the promoter, the crystal size grows from hundreds of nanometers to approximately 1 micrometer, demonstrating that the promoter facilitates the growth of transition metal chalcogenide films. Figure 16 shows SEM images of PtSe₂ deposited without a promoter on the left, and SEM images of PtSe₂ deposited using potassium tributoxy (PTBO) on the right. PtSe₂ crystal growth is confirmed in both images. However, it is confirmed that with the promoter, the crystal size grows to approximately hundreds of nanometers, demonstrating that the promoter facilitates the growth of transition metal chalcogenide films.

[0114] Figure 17 shows a SEM image of WSe₂ deposited without the use of a promoter on the left, and a SEM image of WSe₂ deposited using sodium formate (SF) on the right. Both images confirm the growth of WSe₂ crystals. However, the use of a promoter shows that the crystal size increased from tens of nanometers to approximately hundreds of nanometers, demonstrating that the promoter facilitated the growth of the transition metal chalcogenide film.

[0115] As described above, by using chalcogen precursors with lower decomposition energy in the deposition process, the present invention enables the deposition of thin films containing transition metal chalcogenides at lower temperatures compared to existing processes.

Claims

1. A method for depositing a thin film comprising a transition metal chalcogenide, comprising: injecting a transition metal precursor and a chalcogenide precursor into a reaction chamber; and reacting the transition metal precursor and the chalcogenide precursor in a gas phase to deposit a thin film comprising a transition metal chalcogenide on a substrate, wherein, The chalcogen precursor comprises chalcogen-chalcogen bonds, and the bond dissociation energy of the chalcogen-chalcogen bonds is 275 kJ / mol or lower, characterized in that the thin film comprising the transition metal chalcogenide is a single layer to a double layer.

2. The deposition method of claim 1, characterized in that the sulfide precursor has the following structure: R1-Xn-R1, where X is a sulfide element, R1 is hydrogen or an alkyl group having 1 to 4 carbon atoms, and n is 2 to 4.

3. The deposition method of claim 1, wherein the sulfide element of the sulfide precursor is any one of S, Te and Se.

4. The deposition method of claim 3, wherein the sulfur precursor is dimethyl disulfide or dimethyl diselenide.

5. The deposition method of claim 1, characterized in that the deposition method of the thin film containing the transition metal chalcogenide further comprises: supplying an organometallic promoter to the reaction chamber, causing the organometallic promoter to react together with the transition metal precursor and the chalcogenide precursor, thereby depositing the thin film containing the transition metal chalcogenide on the substrate.

6. The deposition method of claim 5, characterized in that the organometallic promoter is an organoalkali metal having a vapor pressure of 0.1 mmHg or higher at room temperature.

7. The deposition method of claim 6, wherein the organometallic promoter comprises any one of sodium propionate, sodium formate, sodium tributoxy, and potassium tributoxy.

8. The deposition method of claim 1, characterized in that the decomposition temperature of the sulfide precursor is 500°C or lower.

9. The deposition method of claim 1, wherein the transition metal precursor comprises any one of transition metal halides, transition metal oxyhalides, and transition metal carbonyl compounds.

10. The deposition method of claim 9, wherein the transition metal precursor is any one of MoO₂Cl₂, MoCl₅, WOCl₄, WCl₅, Mo(CO)₆, and W(CO)₆.

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