Substrate processing method and substrate processing apparatus

Abstract

[Problem] To provide a technique that facilitates maintaining a constant temperature of plating solution on a substrate. [Solution] The substrate processing method disclosed herein includes: a process for holding the substrate; a process for supplying plating solution; a process for covering the substrate; a process for heating the plating solution; and a process for supplying cooling gas. The process for holding the substrate involves holding the substrate using a holding portion of the substrate holder. The process for supplying plating solution involves supplying plating solution to the surface of the held substrate. The process for covering the substrate involves covering the substrate with a cover before or after the process for supplying plating solution. The process for heating the plating solution involves heating the plating solution on the substrate using a heating portion provided on the cover while the substrate is covered with the cover. The process for supplying cooling gas involves supplying cooling gas from below the substrate or the holding portion during the process of heating the plating solution.

Description

Technical Field

[0001] This disclosure relates to a substrate processing method and a substrate processing apparatus. Prior Technology

[0002] Previously, electroless plating techniques for semiconductor wafers and other substrates using plating solutions were known. Patent Document 1 discloses a technique in which plating solution is placed on a substrate, the substrate is covered with a cover, and the plating solution on the substrate is heated using a heater provided on the cover, thereby forming a plating film on the substrate. [Previous Technical Documents] [Patent Literature]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-3097 Summary of the Invention

[0004] [The problem that the invention aims to solve]

[0005] This disclosure provides a technique that facilitates maintaining a constant temperature of the plating solution on a substrate. [Methods used to solve problems]

[0006] The substrate processing method disclosed herein includes a process for holding the substrate; a process for supplying plating solution; a process for covering the substrate; a process for heating the plating solution; and a process for supplying cooling gas. The process for holding the substrate involves holding the substrate using a holding portion of the substrate holder. The process for supplying plating solution involves supplying plating solution to the top surface of the held substrate. The process for covering the substrate involves covering the substrate with a cover before or after the process of supplying plating solution. The process for heating the plating solution involves heating the plating solution on the substrate using a heating portion provided on the cover while the substrate is covered with the cover. The process for supplying cooling gas involves supplying cooling gas from below the substrate or the holding portion during the process of heating the plating solution. [Effects of the Invention]

[0007] This disclosure makes it easy to maintain a constant temperature of the plating solution on the substrate. Simple Explanation of the Diagram

[0008] [Figure 1] is a diagram showing the configuration of the substrate processing apparatus involved in the implementation. [Figure 2] is a diagram showing the structure of the plating treatment unit involved in the implementation type. [Figure 3] is a diagram of the structure of the cooling gas supply unit involved in the implementation model. [Figure 4] is a flowchart showing the processing sequence of the plating treatment unit involved in the implementation model. [Figure 5] is an explanatory diagram showing the substrate holding process shown in Figure 4. [Figure 6] is an explanatory diagram of the plating solution loading and treatment shown in Figure 4. [Figure 7] is an explanatory diagram of the process of covering the substrate shown in Figure 4 with a cover. [Figure 8] is an explanatory diagram showing the cooling process shown in Figure 4. [Figure 9] is a schematic graph showing the temperature change of the plating solution during heat treatment. [Figure 10] is a diagram showing the structure of the plating treatment part involved in the first modified example. [Figure 11] is a flowchart showing the processing sequence of the plating treatment section involved in the first modified example. [Figure 12] is a diagram showing the structure of the plating treatment part involved in the second modified example. [Figure 13] is a diagram schematically showing the positional relationship between the multiple heating zones and multiple cooling gas nozzles of the heater. Implementation

[0009] Hereinafter, embodiments (hereinafter referred to as "embodiments") for implementing the substrate processing method and substrate processing apparatus according to the present disclosure will be described in detail with reference to the accompanying drawings. However, the present disclosure is not limited by these embodiments. Furthermore, the embodiments can be appropriately combined without contradicting the processing content. Moreover, in the following embodiments, the same symbols are used to mark the same parts, and repeated descriptions are omitted.

[0010] Furthermore, in the following implementations, although expressions such as "certain," "orthogonal," "perpendicular," or "parallel" may be used, these expressions need not be strictly "certain," "orthogonal," "perpendicular," or "parallel." That is, the above expressions allow for deviations such as manufacturing precision and setting precision.

[0011] Furthermore, in the figures referred to below, to facilitate understanding, there are cases where a rectangular coordinate system is shown, defining mutually orthogonal X-axis, Y-axis, and Z-axis directions, with the positive Z-axis direction set as the vertically upward direction. Also, there are cases where the direction of rotation about the vertical axis is referred to as the θ direction.

[0012] [Composition of the substrate processing apparatus] Figure 1 is a diagram showing the configuration of the substrate processing apparatus according to the embodiment. As shown in Figure 1, the substrate processing apparatus 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged adjacent to each other.

[0013] The loading / unloading station 2 includes a carrier placement stage 11 and a transport unit 12. On the carrier placement stage 11, a plurality of carriers C are placed, which are multiple substrates that are horizontally housed in the carriers C. In this embodiment, they are semiconductor wafers (hereinafter referred to as substrates W).

[0014] The carrier platform 11 is arranged in a manner in which multiple loading ports are adjacent to the transport section 12, and each of the multiple loading ports holds a carrier C.

[0015] The transport unit 12 is disposed adjacent to the carrier stage 11 and includes a substrate transport device 13 and a receiving unit 14 inside. The substrate transport device 13 has a wafer holding mechanism for holding the substrate W. Furthermore, the substrate transport device 13 can move in the horizontal and vertical directions and rotate about the vertical axis, and uses the wafer holding mechanism to transport the substrate W between the carrier C and the receiving unit 14.

[0016] Processing station 3 is disposed adjacent to transport unit 12. Processing station 3 includes transport unit 15 and multiple plating processing units 5. The multiple plating processing units 5 are arranged side by side on both sides of transport unit 15. The configuration of plating processing units 5 will be described later.

[0017] The transport unit 15 includes a substrate transport device 17. The substrate transport device 17 has a wafer holding mechanism for holding the substrate W. Furthermore, the substrate transport device 17 can move in the horizontal and vertical directions and rotate about the vertical axis, and uses the wafer holding mechanism to transport the substrate W between the receiving unit 14 and the plating processing unit 5.

[0018] Furthermore, the substrate processing apparatus 1 includes a control device 9. The control device 9 is, for example, a computer, and includes a control unit 91 and a memory unit 92. The memory unit 92 stores programs that control various processes performed in the substrate processing apparatus 1. The control unit 91 controls the operation of the substrate processing apparatus 1 by reading and executing the programs stored in the memory unit 92.

[0019] Furthermore, such a program can be recorded on a computer-readable memory medium, even if it is installed from the memory medium into the memory unit 92 of the control device 9. Examples of computer-readable memory media include hard disks (HD), floppy disks (FD), optical discs (CD), magnetic discs (MO), and memory cards.

[0020] In the substrate processing apparatus 1 configured as described above, the substrate transport device 13 of the transfer station 2 first removes the substrate W from the carrier C placed on the carrier placement stage 11 and places the removed substrate W in the receiving section 14. The substrate W placed in the receiving section 14 is removed from the receiving section 14 by the substrate transport device 17 of the processing station 3 and transported to the plating processing section 5, where it is processed. For example, grooves or vias are formed on the surface of the substrate W, and the plating processing section 5 embeds metal into such grooves using an electroless plating method.

[0021] The substrate W processed by the plating processing unit 5 is removed from the plating processing unit 5 by the substrate transport device 17 and placed in the receiving unit 14. Moreover, the processed substrate W placed in the receiving unit 14 is returned to the carrier C of the carrier placement stage 11 by the substrate transport device 13.

[0022] [Composition of the plating treatment department] Next, the structure of the plating treatment unit will be described with reference to FIG2. FIG2 is a diagram showing the structure of the plating treatment unit 5 involved in the embodiment.

[0023] The plating processing unit 5 is configured to perform liquid processing including electroless plating. The plating processing unit 5 includes a chamber 51, a substrate holding part 52 disposed in the chamber 51 to hold the substrate W horizontally, and a plating liquid supply part 53 that supplies plating liquid L1 (processing liquid) to the surface (top) of the substrate W held in the substrate holding part 52.

[0024] In one embodiment, the substrate holding portion 52 has a clamping member 521 that vacuum-adsorbs the underside (back side) of the substrate W. This clamping member 521 is known as a vacuum clamp type.

[0025] A rotary motor 523 (rotation drive unit) is connected to the substrate holding part 52 via a rotary shaft 522. When the rotary motor 523 is driven, the substrate holding part 52 rotates together with the substrate W. The rotary motor 523 is supported on a base 524 that is fixed to the chamber 51. In addition, no heating source such as a heater is provided inside the substrate holding part 52.

[0026] The plating solution supply unit 53 includes a plating solution nozzle 531 that dispenses (supplyes) plating solution L1 to the substrate W held in the substrate holding unit 52, and a plating solution supply source 532 that supplies plating solution L1 to the plating solution nozzle 531. The plating solution supply source 532 is configured to supply plating solution L1, which is heated or conditioned to a specific temperature, to the plating solution nozzle 531 via a plating solution piping 533. The temperature of the plating solution L1 dispensed from the plating solution nozzle 531 is, for example, 55°C or higher and 75°C or lower, more preferably 60°C or higher and 70°C or lower. The plating solution nozzle 531 is held in a nozzle arm 56 and is configured to be movable.

[0027] Plating solution L1 is a self-catalyst (reducing) electroless plating solution. Plating solution L1 contains, for example, metal ions and reducing agents. Metal ions contained in plating solution L1 include, for example, cobalt (Co) ions, nickel (Ni) ions, tungsten (W) ions, copper (Cu) ions, palladium (Pd) ions, gold (Au) ions, and ruthenium (Ru) ions. Furthermore, the reducing agents contained in plating solution L1 include hypophosphorous acid, dimethylamine borane, and glyoxylic acid. Examples of plating films formed by plating treatment using plating solution L1 include, for example, CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP, Cu, Pd, and Ru. Moreover, the plating film can be formed as a single layer or as a layer covering two or more layers. In the case where the coated film is formed by two layers, it is acceptable to have layers such as CoWB / CoB or Pd / CoB sequentially from the base metal layer (seed layer) side.

[0028] The plating processing unit 5 further includes a cleaning solution supply unit 54 that supplies cleaning solution L2 to the surface of the substrate W held in the substrate holding unit 52, and a rinsing solution supply unit 55 that supplies rinsing solution L3 to the surface of the substrate W.

[0029] The cleaning solution supply unit 54 supplies cleaning solution L2 to the substrate W, which is held and rotated in the substrate holding unit 52, for pre-cleaning treatment of the seed layer formed on the substrate W. The cleaning solution supply unit 54 has a cleaning solution nozzle 541 that dispenses cleaning solution L2 from the substrate W held in the substrate holding unit 52, and a cleaning solution supply source 542 that supplies cleaning solution L2 to the cleaning solution nozzle 541. The cleaning solution supply source 542 is configured to supply cleaning solution L2, heated or heated to a specific temperature, as described later, to the cleaning solution nozzle 541 via a cleaning solution pipe 543. The cleaning solution nozzle 541 is held in a nozzle arm 56 and can move together with the plating solution nozzle 531.

[0030] As the cleaning solution L2, a dicarboxylic acid or a tricarboxylic acid is used. Among them, as a dicarboxylic acid, organic acids such as malic acid, succinic acid, malonic acid, oxalic acid, glutaric acid, adipic acid, and tartaric acid can be used. Furthermore, as a tricarboxylic acid, organic acids such as citric acid can be used.

[0031] The rinsing fluid supply unit 55 includes a rinsing fluid nozzle 551 that dispenses rinsing fluid L3 to the substrate W held in the substrate holding unit 52, and a rinsing fluid supply source 552 that supplies rinsing fluid L3 to the rinsing fluid nozzle 551. The rinsing fluid nozzles 551 are held in a nozzle arm 56 and are movable together with the plating solution nozzle 531 and the cleaning solution nozzle 541. Furthermore, the rinsing fluid supply source 552 is configured to supply rinsing fluid L3 to the rinsing fluid nozzles 551 via a rinsing fluid piping 553. For example, DIW can be used as the rinsing fluid L3.

[0032] A nozzle moving mechanism (not shown) connects the nozzle arm 56 of the aforementioned plating solution nozzle 531, cleaning solution nozzle 541, and rinsing solution nozzle 551. This nozzle moving mechanism allows the nozzle arm 56 to move horizontally and vertically. More specifically, through the nozzle moving mechanism, the nozzle arm 56 can move between a dispensing position for dispensing processing liquid (plating solution L1, cleaning solution L2, or rinsing solution L3) onto the substrate W and a retracted position from the dispensing position. The dispensing position is not particularly limited if it allows the supply of processing liquid to any location on the surface of the substrate W. For example, it is preferable to set it to a position that allows the supply of processing liquid to the center of the substrate W. The dispensing position of the nozzle arm 56 can be different depending on whether plating solution L1, cleaning solution L2, or rinsing solution L3 is being supplied to the substrate W. The retracted position is the position within the chamber 51 that, when viewed from above, does not overlap with the substrate W, i.e., the position separated from the dispensing position. When the nozzle arm 56 is positioned in the retracted position, the moving cover 6 is prevented from interfering with the nozzle arm 56.

[0033] A cup 571 is disposed around the substrate holding portion 52. Viewed from above, the cup 571 is annular and, when the substrate W rotates, collects the processing liquid that spills from the substrate W and guides it to the drain pipe 581, described later. An environmental shielding cover 572 is provided on the outer periphery of the cup 571 to prevent the environment around the substrate W from diffusing into the chamber 51. The environmental shielding cover 572 is formed into a cylindrical shape extending vertically, with an opening at the top. A cover 6, described later, can be inserted into the environmental shielding cover 572 from above.

[0034] In one embodiment, the substrate W held in the substrate holding portion 52 is covered by a cover 6. The cover 6 has a top portion 61 and a side wall portion 62 extending downward from the top portion 61.

[0035] The canopy portion 61 includes a first top plate 611 and a second top plate 612 disposed on the first top plate 611. A heater 63 (heating part) is inserted between the first top plate 611 and the second top plate 612. The first top plate 611 and the second top plate 612 constitute a sealed heater 63, which does not come into contact with the plating solution L1 or other processing liquid. More specifically, a sealing ring 613 is provided on the outer periphery of the heater 63, thereby sealing the heater 63. It is preferable that the first top plate 611 and the second top plate 612 have corrosion resistance to the plating solution L1 or other processing liquid, for example, even if they are formed by aluminum alloy. Furthermore, to further improve corrosion resistance, the first top plate 611, the second top plate 612, and the side wall portion 62 may be coated with Teflon (registered trademark).

[0036] The cover 6 is connected to the cover moving mechanism 7 via the cover arm 71. The cover moving mechanism 7 moves the cover 6 in the horizontal and vertical directions. More specifically, the cover moving mechanism 7 has a rotary motor 72 for moving the cover 6 in the horizontal direction and a cylinder 73 (interval adjustment part) for moving the cover 6 in the vertical direction. The rotary motor 72 is mounted on a support plate 74, which is configured to move the cylinder 73 in the vertical direction. As an alternative to the cylinder 73, an actuator (not shown) including a motor and a ball screw can also be used.

[0037] The rotary motor 72 of the cover moving mechanism 7 moves the cover 6 between an upper position, where it is positioned above the substrate W held in the substrate holding portion 52, and a retracted position, where it is retracted from the upper position. The upper position is a position where the cover faces the substrate W held in the substrate holding portion 52 at a relatively large interval, and overlaps with the substrate W when viewed from above. The retracted position is a position within the chamber 51 where, when viewed from above, it does not overlap with the substrate W. When the cover 6 is positioned in the retracted position, the moving nozzle arm 56 is prevented from interfering with the cover 6. The rotation axis of the rotary motor 72 extends vertically, allowing the cover 6 to rotate horizontally between the upper and retracted positions.

[0038] The cylinder 73 of the cover moving mechanism 7 moves the cover 6 in the vertical direction, adjusting the distance between the substrate W supplied with plating solution L1 and the first top plate 611 of the canopy portion 61. More specifically, the cylinder 73 positions the cover 6 in the lower position (the position indicated by the solid line in Figure 2) and the upper position (the position indicated by the two-point chain line in Figure 2).

[0039] In this embodiment, when the heater 63 is driven and the cover 6 is positioned in the aforementioned lower position, the substrate holding portion 52 or the plating solution L1 on the substrate W is heated.

[0040] The top portion 61 and sidewall portion 62 of the cover 6 are covered by a cover cover 64. The cover cover 64 is mounted on the second top plate 612 of the cover 6 via support portions 65. Specifically, a plurality of support portions 65 protruding upwards from the top of the second top plate 612 are provided on the second top plate 612, and the cover cover 64 is mounted on these support portions 65. The cover cover 64 is capable of moving horizontally and vertically together with the cover 6. Furthermore, to suppress heat release from the cover 6 to the surrounding environment, the cover cover 64 preferably has higher heat insulation properties than the top portion 61 and sidewall portion 62. For example, the cover cover 64 is preferably formed of a resin material, and it is even more preferable that the resin material has heat resistance.

[0041] As described above, in the embodiment, the cover 6 and cover cover 64 having heater 63 are integrated. When positioned in the lower position, the cover unit 10 covering the substrate holding part 52 or substrate W is formed by the cover 6 and cover cover 64.

[0042] Above chamber 51, a fan filter unit 59 (gas supply unit) is provided to supply clean air (gas) to the area surrounding cover 6. The fan filter unit 59 supplies air into chamber 51 (especially into environmental shielding cover 572), and the supplied air flows toward exhaust pipe 81. Around cover 6, this air forms a downward flow, through which gas vaporized from the plating solution L1 or similar processing liquid flows toward exhaust pipe 81. This prevents gas vaporized from the processing liquid from rising and diffusing into chamber 51.

[0043] The gas supplied from the aforementioned fan filter unit 59 is discharged through the exhaust mechanism 8.

[0044] [Composition of the Cooling Gas Supply Section] The plating processing unit 5 in the embodiment further includes a cooling gas supply unit for supplying cooling gas to the underside of the substrate W or the clamping member 521. The configuration of this cooling gas supply unit will be described with reference to FIG3. FIG3 is a diagram of the configuration of the cooling gas supply unit in the embodiment.

[0045] As shown in Figure 3, the cooling gas supply unit 4 has a cooling gas nozzle 41 that discharges cooling gas, and a cooling gas supply source 42 that supplies cooling gas to the cooling gas nozzle 41. In an embodiment, the cooling gas supply source 42 supplies room temperature (not temperature-adjusted) cooling gas to the cooling gas nozzle 41 via a cooling gas pipe 43. An inert gas, such as nitrogen or argon, is used as the cooling gas.

[0046] The cooling gas nozzle 41 is positioned below the substrate W held in the clamp member 521, discharging cooling gas toward the underside of the substrate W. In one embodiment, the cooling gas nozzle 41 discharges cooling gas radially outward toward the substrate W. This allows for efficient and comprehensive supply of cooling gas to the entire underside of the substrate W. Furthermore, not limited to this example, the cooling gas nozzle 41 may also discharge cooling gas vertically upward. Additionally, the cooling gas nozzle 41 may also discharge cooling gas toward the clamp member 521.

[0047] [Specific Operations of the Plating Processing Department] Next, the specific operation of the plating processing unit 5 will be described with reference to Figures 4 to 8. Figure 4 is a flowchart showing the sequence of processes performed by the plating processing unit 5 in the embodiment. Furthermore, Figure 5 is an explanatory diagram of the substrate holding process shown in Figure 4, and Figure 6 is an explanatory diagram of the plating solution containing process shown in Figure 4. Furthermore, Figure 7 is an explanatory diagram of the process of the cover 6 covering the substrate W shown in Figure 4, and Figure 8 is an explanatory diagram of the cooling process shown in Figure 4. In addition, the series of processes shown in Figure 4 are performed under the control of the control unit 91.

[0048] As shown in Figure 4, firstly, the substrate W, which is transferred to the plating processing section 5, is held in the substrate holding section 52 (step S101). Here, the lower center of the substrate W is vacuum-adsorbed, and the substrate W is held horizontally in the substrate holding section 52 (see Figure 5).

[0049] Next, the substrate W held in the substrate holding section 52 is cleaned (step S102). In this case, the rotary motor 523 is first driven and the substrate W rotates a specific number of times. Then, the nozzle arm 56, which is positioned in the retracted position (the position indicated by the solid line in FIG2), moves to the discharge position above the center of the substrate W. Next, the cleaning liquid L2 is supplied from the cleaning liquid nozzle 541 to the rotating substrate W, and the surface of the substrate W is cleaned. As a result, any adhering substances or the like are removed from the substrate W. The cleaning liquid L2 supplied to the substrate W is discharged into the drain pipe 581.

[0050] Next, the cleaned substrate W is rinsed (step S103). In this case, rinsing fluid L3 is supplied from rinsing fluid nozzle 551 to the rotating substrate W, and the surface of the substrate W is rinsed. Accordingly, the cleaning fluid L2 remaining on the substrate W is rinsed off. The rinsing fluid L3 supplied to the substrate W is discharged into the drain pipe 581.

[0051] Next, plating solution L1 is supplied and placed on the substrate W after rinsing (step S104). In this case, the rotation speed of the substrate W is first reduced to a lower speed than that during the rinsing process. For example, the rotation speed of the substrate W can be set to 50 to 150 rpm. In this way, the plating film formed on the substrate W can be made uniform. Alternatively, the rotation of the substrate W can be stopped.

[0052] Next, plating solution L1 is ejected from plating solution nozzle 531 onto the surface of substrate W. The ejected plating solution L1 is retained on substrate W by surface tension, forming a layer of plating solution L1 (so-called overflow) (see Figure 6). A portion of the plating solution L1 flows out from the surface of substrate W and is discharged from drain pipe 581. After a specific amount of plating solution L1 has been ejected from plating solution nozzle 531, the ejection of plating solution L1 stops. Then, nozzle arm 56, which was positioned in the ejection position, is positioned in the retracted position.

[0053] Next, the plating solution L1 contained on the substrate W is heated. First, the substrate W is covered by the cover 6 (step S105). In this case, the rotary motor 72 of the cover moving mechanism 7 is driven, and the cover 6 rotates and moves in the horizontal direction, and is positioned at the upper position (the position indicated by the two-point chain line in Figure 2).

[0054] Next, the cylinder 73 of the cover moving mechanism 7 is driven, and the cover 6, which is positioned in the upper position, descends and is positioned in the processing position. Accordingly, the gap between the plating solution L1 on the substrate W and the first top plate 611 of the cover 6 becomes the first gap, and the side wall portion 62 of the cover 6 is disposed on the outer periphery of the substrate W. In this embodiment, the lower end of the side wall portion 62 of the cover 6 is positioned lower than the bottom of the substrate W. In this way, the substrate W is covered by the cover 6, and the space around the substrate W is enclosed (see Figure 7).

[0055] Next, the heat treatment begins (step S106). Specifically, heater 63 is turned on, and the plating solution L1 contained on the substrate W is heated. The set temperature of heater 63 is fixed at a certain target temperature through the heat treatment. The target temperature is, for example, 90°C or higher and 100°C or lower. When the temperature of the plating solution L1 rises to the temperature at which the components precipitate, the components of the plating solution L1 precipitate on the surface of the seed layer, forming a plating film.

[0056] Next, the control unit 91 determines whether the temperature of the plating solution L1 on the substrate W has reached the target temperature (step S107). This determination is based on, for example, the elapsed time since the start of the heat treatment in step S106. That is, the control unit 91 determines that the temperature of the plating solution L1 has reached the target temperature after a preset time has elapsed since the start of the heat treatment. The control unit 91 repeats the determination in step S107 until the preset time has elapsed (step S107, No).

[0057] When the temperature of the plating solution L1 reaches the target temperature in step S107 (step S107, Yes), the cooling process begins (step S108). Specifically, cooling gas is supplied from the cooling gas supply unit 4 to the underside of the substrate W (see Figure 8).

[0058] Figure 9 is a schematic graph showing the temperature change of plating solution L1 during heat treatment. In Figure 9, a dotted chain line represents the temperature change of plating solution L1 without cooling. Furthermore, in Figure 9, the symbol T0 represents the temperature of plating solution L1 at the start of heat treatment (e.g., a temperature below the temperature of plating solution L1 supplied from plating solution supply unit 53). Moreover, the symbol T1 represents the target temperature of plating solution L1.

[0059] As shown in Figure 9, without cooling, the temperature of the plating solution L1 continues to rise for a short period after reaching the target temperature T1. To suppress this temperature rise, for example, it is considered to gradually increase the set temperature of the heater 63 towards the target temperature T1, but this is not ideal considering the increased time required for the heating process. Furthermore, the heater 63 has multiple heating regions with individually adjustable temperatures to improve the temperature uniformity of the plating solution L1 within the surface of the substrate W (this will be discussed later). In this case, the set temperature of the heater 63 is adjusted in each heating region to increase the in-plane temperature uniformity of the plating solution L1. Therefore, in this case, dynamically changing the set temperature during the heating process may actually reduce the in-plane temperature uniformity of the plating solution L1.

[0060] Therefore, in the embodiment, the plating processing unit 5, when the temperature of the plating solution L1 reaches the target temperature T1, suppresses the temperature rise of the plating solution L1 above the target temperature T1 by supplying cooling gas to the underside of the substrate W. Thus, even when the heating process is performed with the heater 63 set at the target temperature, the plating processing unit 5 in the embodiment can easily maintain the temperature of the plating solution L1 on the substrate W at a constant level.

[0061] Next, for example, after the heating process begins in step S106, the heating and cooling processes end after a pre-set time has elapsed as the heating process time (step S109). Specifically, the heater 63 is turned off, and the supply of cooling gas from the cooling gas supply section 4 to the underside of the substrate W is stopped.

[0062] Next, the cover retraction process is performed (step S110). During the cover retraction process, the cover moving mechanism 7 is driven, and the cover 6 is positioned in the retracted position. In this case, firstly, the cylinder 73 of the cover moving mechanism 7 is driven, thus the cover 6 rises and is positioned in the upper position. Then, the rotary motor 72 of the cover moving mechanism 7 is driven, and the cover 6, positioned in the upper position, rotates horizontally and is positioned in the retracted position.

[0063] Next, the substrate W is rinsed (step S111). In this case, the rotation number of the substrate W is increased compared to the rotation number during the plating process. For example, the substrate W is rotated at the same rotation number as the rinsing process before plating (step S103). Next, the rinsing fluid nozzle 551, which is positioned in the retracted position, moves towards the ejection position. Then, rinsing fluid L3 is supplied from the rinsing fluid nozzle 551 to the rotating substrate W, and the surface of the substrate W is cleaned. Accordingly, the plating fluid L1 remaining on the substrate W is rinsed off.

[0064] Next, the substrate W, after being rinsed, is dried (step S112). In this case, for example, the rotation speed of the substrate W is increased compared to the rotation speed in the rinsing process (step S111), so that the substrate W is rotated at a high speed. In this way, the rinsing liquid L3 remaining on the substrate W is spun off, and the substrate W is dried.

[0065] When the drying process is completed, the substrate W is removed from the plating process section 5 by the substrate transport device 17 and transported to the receiving section 14. Furthermore, the substrate W transported to the receiving section 14 is removed from the receiving section 14 by the substrate transport device 13 and stored in the carrier C. In this way, a series of electroless plating processes are completed on a substrate W.

[0066] (First variation) Figure 10 is a diagram showing the configuration of the plating processing unit according to the first modified example. As shown in Figure 10, the plating processing unit 5A according to the first modified example has an integrated configuration of a cover 6A and a plating liquid nozzle 531A of a plating liquid supply unit 53A.

[0067] Specifically, the plating solution nozzle 531A is installed through the top portion 61 of the cover 6A, the heater 63, and the cover 64. The plating solution nozzle 531A moves simultaneously with the cover 6A via the cover moving mechanism 7.

[0068] Here, although the plating liquid nozzle 531A is arranged above the center of the substrate W held in the substrate holding part 52, it is also possible for the plating liquid nozzle 531A to be arranged at a position offset from the center of the substrate W.

[0069] Next, the specific operation of the plating processing unit 5A involved in the first modified example will be described with reference to FIG11. FIG11 is a flowchart showing the sequence of processes performed by the plating processing unit involved in the first modified example.

[0070] In the processes of steps S201 to S212 shown in Figure 11, except for steps S204 and S205, the processes are the same as those of steps S101 to S112 performed by the plating processing unit 5 in the embodiment, except for steps S104 and S105. Specifically, the processes of steps S201 to S203 are the same as those of steps S101 to S103, and the processes of steps S206 to S212 are the same as those of steps S106 to S112.

[0071] As shown in Figure 11, in the plating process section 5A involved in the first modified example, after the process of covering the substrate W with the cover 6A is performed (step S204), the plating solution L1 is loaded (step S205).

[0072] In this way, if the plating solution L1 is supplied to the substrate W after the cover 6A is placed over the substrate W, the temperature drop of the plating solution L1 on the substrate W can be suppressed compared to the case where the cover 6A is placed over the substrate W after the plating solution L1 is supplied. That is, the temperature drop of the plating solution L1 that occurs during the period when the cover 6A moves until it covers the substrate W after the plating solution L1 is supplied to the substrate W can be suppressed.

[0073] Furthermore, even after the substrate W is covered with the cover 6A in step S204, the plating processing unit 5A can preheat the substrate W by turning on the heater 63 before supplying the plating solution L1.

[0074] Furthermore, even when the plating processing unit 5A covers the substrate W with the cover 6A in step S204, the cover 6A can still be positioned so that its first top plate 611 contacts the plating solution L1 contained on the substrate W in step S205. Therefore, in the subsequent heating processes (steps S206-S209), the heat from the heater 63 can be efficiently transferred to the plating solution L1. Thus, the heating efficiency of the plating solution L1 can be improved.

[0075] When the cover 6A is in contact with the plating solution L1, the plating processing unit 5A can perform rinsing (step S211) and drying (step S212) while maintaining the cover 6A covering the substrate W. In this way, the plating solution L1 adhering to the first top plate 611 of the cover 6A can be rinsed by the rinsing solution L3, and the first top plate 611 can be dried. Furthermore, in this case, the plating solution nozzle 531A can be connected to the rinsing solution supply source 552 via the rinsing solution piping 553. Moreover, the plating solution nozzle 531A can be connected to the drying gas supply source via piping. In this way, during the drying process (step S212), the plating processing unit 5A can supply the interior of the cover 6A with a drying gas (e.g., an inert gas such as nitrogen) supplied from the drying gas supply source, thereby drying the substrate W and the cover 6A.

[0076] (Second variation) Figure 12 is a diagram showing the configuration of the plating treatment section involved in the second modified example. Furthermore, Figure 13 is a diagram schematically showing the positional relationship between the plurality of heating zones and the plurality of cooling gas nozzles of the heater.

[0077] As shown in Figure 12, the cover 6B of the plating treatment section 5B involved in the second modification example includes a heater 63B.

[0078] The heater 63B according to the second modification has a plurality of heating regions 631-633 whose temperatures can be individually set. The plurality of heating regions 631-633 are arranged, for example, in a concentric circle shape (see Figure 13). The plurality of heating regions 631-633 are arranged from the center of the substrate W outward in the order of heating region 631, heating region 632, and heating region 633. Among the plurality of heating regions 631-633, heating region 631 has a diameter approximately the same as, for example, the clamping member 521.

[0079] Furthermore, the plating processing unit 5B involved in the second modification includes a plurality of cooling gas supply units 4B1 to 4B3. The cooling gas supply units 4B1 to 4B3 have the same configuration as the cooling gas supply unit 4 described above, and each includes cooling gas nozzles 411 to 413, cooling gas supply sources 421 to 423, and cooling gas piping 431 to 433. Additionally, the plurality of cooling gas nozzles 411 can be connected to a single cooling gas nozzle.

[0080] Cooling gas nozzles 411-413 are positioned corresponding to the plurality of heating zones 631-633. Specifically, cooling gas nozzle 411 is positioned below heating zone 631, discharging cooling gas from below towards the underside of the clamping member 521 located below heating zone 631. Furthermore, cooling gas nozzle 412 is positioned below heating zone 632, discharging cooling gas from below towards the underside of the substrate W located below heating zone 632. Furthermore, cooling gas nozzle 413 is positioned below heating zone 633, discharging cooling gas from below towards the underside of the substrate W located below heating zone 633.

[0081] As shown in Figure 13, even if multiple cooling gas nozzles 411-413 are provided relative to each heating zone 631.

[0082] Here, although the example shown is that the cooling gas is ejected vertically upward from the cooling gas nozzles 411-413, it is also possible for the cooling gas nozzles 411-413 to eject the cooling gas at an angle to the substrate W or the clamping member 521.

[0083] In this way, even if the plating processing unit 5B has multiple cooling gas nozzles 411-413 corresponding to multiple heating zones 631-633 whose temperatures can be individually set, the plating processing unit 5B can more easily maintain the temperature of the plating solution L1 on the substrate W at a constant level.

[0084] (Other variations) In the above embodiment, although it is assumed that the supply of cooling gas begins when the temperature of the plating solution L1 reaches the target temperature, it is also acceptable for the cooling gas to be supplied before the temperature of the plating solution L1 reaches the target temperature. For example, it is acceptable for the supply of cooling gas to begin simultaneously with the heating process. In this case, the flow rate of cooling gas (first flow rate) in the heating process (first heating process) before the plating solution L1 reaches the target temperature T1 is set to be less than the flow rate of cooling gas (second flow rate) in the heating process (second heating process) after the plating solution L1 reaches the target temperature T1.

[0085] In the above embodiment, although the cooling gas is supplied at room temperature, the temperature of the cooling gas only needs to be at least lower than the target temperature T1, and it does not necessarily have to be room temperature. In addition, for machines that do not require, for example, temperature regulation of the cooling gas, it is preferable to use cooling gas at room temperature.

[0086] As described above, the substrate processing method involved in the embodiment includes a process for holding the substrate (e.g., substrate holding process), a process for supplying plating solution (e.g., plating loading process), a process for covering the substrate (e.g., process for covering the substrate with a cover), a process for heating the plating solution (e.g., heating process), and a process for supplying cooling gas (e.g., cooling process). The process for holding the substrate involves holding the substrate using a holding portion (e.g., substrate holding portion 52) of the substrate (e.g., substrate W). The process for supplying the plating solution involves supplying plating solution (e.g., plating solution L1) onto the surface of the held substrate. The process for covering the substrate involves covering the substrate with a cover (e.g., cover 6) before or after the process for supplying the plating solution. The process for heating the plating solution involves heating the plating solution on the substrate using a heating portion (e.g., heater 63) provided on the cover while the substrate is covered with the cover. In the process of heating the plating solution, the cooling gas supply method involves supplying cooling gas (e.g., inert gas) from below the substrate to the underside or holding portion of the substrate. Therefore, by employing the substrate processing method described in this embodiment, it becomes easier to maintain a constant temperature of the plating solution on the substrate.

[0087] In the process of supplying cooling gas, when the temperature of the plating solution reaches the target temperature (e.g., target temperature T1), cooling gas can also be supplied to the underside of the substrate or the holding part. In this way, it is possible to suppress the temperature rise of the plating solution that exceeds the target temperature. Therefore, even when the heating section is set at the target temperature for heating treatment, it is easy to maintain a constant temperature of the plating solution on the substrate.

[0088] The target temperature is the set temperature of the heating element. After the temperature of the plating solution reaches the target temperature, which is the set temperature of the heating element, it continues to rise for a short period of time. In the substrate processing method of the embodiment, when the temperature of the plating solution reaches the target temperature, cooling gas is supplied to the underside of the substrate or the holding part, thereby suppressing the temperature rise of the plating solution that exceeds the target temperature.

[0089] The temperature of the cooling gas is room temperature. Therefore, no machine is needed to regulate the temperature of the cooling gas.

[0090] The heating section has multiple heating zones with individually adjustable temperatures. In this case, the cooling gas supply can be provided from multiple nozzles positioned below the substrate, corresponding to the multiple heating zones. This makes it easier to maintain a constant temperature of the plating solution on the substrate.

[0091] Furthermore, the substrate processing apparatus (e.g., plating processing unit 5) according to the embodiment includes a holding part (e.g., substrate holding part 52), a plating solution supply part (e.g., plating solution supply part 53), a cover (e.g., cover 6), a moving mechanism (e.g., cover moving mechanism 7), a heating part (e.g., heater 63), a cooling gas supply part (e.g., cooling gas supply part 4), and a control part (e.g., control part 91). The holding part holds the substrate (e.g., substrate W). The plating solution supply part supplies plating solution (e.g., plating solution L1) to the surface of the substrate held in the holding part. The cover system covers the substrate held in the holding part. The moving mechanism moves the cover. The heating part is provided on the cover. The cooling gas supply part is disposed below the substrate held in the holding part, and supplies cooling gas (e.g., inert gas) to the surface of the substrate or the holding part. The control unit outputs control signals to enable the following steps: holding the substrate using the holding unit (e.g., substrate holding process); supplying plating solution to the substrate using the plating solution supply unit (e.g., plating solution loading process); covering the substrate with a cover before or after the plating solution supply step (e.g., covering the substrate with a cover); heating the plating solution on the substrate using the heating unit while the substrate is covered with a cover (e.g., heating process); and supplying cooling gas from the cooling gas supply unit to the bottom of the substrate or the holding unit during the plating solution heating step (e.g., cooling process). Therefore, by using the substrate processing apparatus of the embodiment, it is easy to maintain a constant temperature of the plating solution on the substrate.

[0092] It should be understood that all points of the embodiments disclosed herein are merely illustrative and not intended to limit the scope. In fact, the aforementioned embodiments can be presented in various forms. Furthermore, the aforementioned embodiments can be omitted, substituted, or modified in various ways without departing from the scope and spirit of the patent application in the appendix.

[0093] 1: Substrate processing device 4: Cooling gas supply section 5: Plating Processing Department 6: Cover 7: Cover moving mechanism 9: Control device 41: Cooling gas nozzle 42: Cooling gas supply source 43: Cooling gas piping 52: Substrate holding section 53: Plating Solution Supply Department 63: Heater 91: Control Department 92: Memory Department 411~413: Cooling gas nozzles 421~423: Cooling gas supply source 431~433: Cooling gas piping 521: Fixture components 531: Plating solution nozzle 532: Plating solution supply source 533:Plating solution piping 631~633: Heating Zone L1: Plating solution L2: Cleaning solution L3: Rinse fluid T1: Target temperature W: substrate

Claims

1. A substrate processing method, comprising: holding the substrate using a holding portion of the substrate holder; supplying a plating solution to the surface of the held substrate; covering the substrate with a cover before or after supplying the plating solution; heating the plating solution on the substrate using a heating portion provided on the cover while the substrate is covered with the cover; and supplying a cooling gas to the underside of the substrate or the holding portion from a position below the substrate during the heating of the plating solution, wherein the supply of the cooling gas is based on the start of the heat treatment. The system determines whether the temperature of the plating solution on the substrate has reached the target temperature after a certain period of time. If the temperature of the plating solution has reached the target temperature, the system supplies cooling gas to the underside of the substrate or the holding portion to suppress the temperature rise of the plating solution above the target temperature. The target temperature is the set temperature of the heating portion. The heating portion has multiple heating areas that can be individually set in a concentric circle. The cooling gas supply system supplies the cooling gas from multiple nozzles located at positions corresponding to the multiple heating areas, which are located below the substrate.

2. The substrate processing method as described in claim 1, wherein the temperature of the cooling gas is room temperature.

3. The substrate processing method as described in claim 1 or 2, wherein cooling gas is directly supplied to at least the holding portion.

4. A substrate processing apparatus comprising: a holding section for holding a substrate; a plating solution supply section for supplying plating solution to the surface of the substrate held in the holding section; a cover for covering the substrate held in the holding section; a moving mechanism for moving the cover; a heating section disposed on the cover; a cooling gas supply section disposed below the substrate held in the holding section for supplying cooling gas to the surface of the substrate or the holding section; and a control section for outputting control signals to perform the following steps: holding the substrate using the holding section; supplying plating solution to the surface of the substrate using the plating solution supply section; covering the substrate with the cover before or after the plating solution supply step; and using the heating section while the substrate is covered with the cover. The steps of heating the plating solution on the substrate and supplying cooling gas from the cooling gas supply unit to the underside of the substrate or the holding unit during the heating of the plating solution are as follows: the cooling gas supply unit determines whether the temperature of the plating solution on the substrate has reached the target temperature based on the elapsed time after the start of the heating process; if the temperature of the plating solution has reached the target temperature, the cooling gas is supplied to the underside of the substrate or the holding unit; the target temperature is a set temperature of the heating unit; and the temperature rise of the plating solution exceeding the target temperature is suppressed. The heating unit has multiple heating areas that can be individually set at temperature and are arranged in a concentric circle. The cooling gas supply unit supplies the cooling gas from multiple nozzles arranged at positions corresponding to the multiple heating areas, which are located below the substrate.

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