Substrate processing apparatus and maintenance method for substrate processing apparatus

Abstract

This invention provides a technique for easily repairing the inner wall component of a substrate processing apparatus. The substrate processing apparatus disclosed in this invention includes: a processing chamber, a substrate support, a support member, an inner wall component, a contact member, and an actuator. The substrate support is disposed within the processing chamber. The support member is disposed above the substrate support. The inner wall component includes a top portion that can be disposed above the substrate support and below the support member. The contact member is mounted on one of the support member and the inner wall component. The contact member secures the inner wall component to the support member in a detachable manner by generating a horizontal spring reaction force on the other component. The actuator moves the inner wall component downwards to release the inner wall component from the support member.

Description

Technical Field

[0001] The embodiments illustrated in this invention relate to a substrate processing apparatus and a method for maintaining the substrate processing apparatus. Prior Technology

[0002] A substrate processing apparatus is used to process a substrate. The substrate processing apparatus includes a processing chamber and a substrate support. The substrate support supports the substrate within the processing chamber. The substrate is processed within the processing chamber. In a plasma processing apparatus, which is one type of substrate processing apparatus, the substrate is processed within the processing chamber by a chemical species derived from "plasma generated from processing gas". Patent Document 1 below discloses such a plasma processing apparatus. [Previous Technical Documents] [Patent Literature]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-197849 Summary of the Invention

[0004] [The problem the invention aims to solve]

[0005] This invention provides a technique for easily repairing the inner wall components of a substrate processing device. [Technical means to solve the problem]

[0006] In one embodiment of the example, a substrate processing apparatus is provided. The substrate processing apparatus includes: a processing chamber, a substrate support, a support member, an inner wall member, a contact member, and an actuator. The processing chamber includes a sidewall providing an opening. The substrate support is disposed within the processing chamber. The support member is disposed above the substrate support. The inner wall member includes a top disposed above the substrate support and below the support member. The contact member is mounted on one of the support member and the inner wall member. The contact member detachably secures the inner wall member to the support member by generating a horizontal spring reaction force on the other member. The actuator moves the inner wall member downward to release the inner wall member from the support member. [Invention Effects]

[0007] According to one embodiment of the example, the inner wall components of the substrate processing device can be easily repaired. Simple Explanation of the Diagram

[0008] Figure 1 is a diagram showing a substrate processing system according to one embodiment of the example. Figure 2 is a schematic diagram of a substrate processing apparatus according to one embodiment of the example. Figure 3 is a partially enlarged cross-sectional view of a substrate processing apparatus according to one embodiment of the example. Figure 4 is a partially enlarged cross-sectional view of a substrate processing apparatus according to one embodiment of the example. Figure 5 is a top view showing an example of a contact member in a substrate processing apparatus according to one embodiment of the example. Figure 6 is a top view showing another example of a contact member in a substrate processing apparatus according to one embodiment of the example. Figure 7 is a diagram showing the state of the substrate processing apparatus when performing a repair method according to one embodiment of the example. Figure 8 is a diagram showing the state of the substrate processing apparatus when performing a maintenance method according to one embodiment of the example. Figure 9 is a diagram showing the state of the substrate processing apparatus when performing a repair method according to one embodiment of the example. Figure 10 is a diagram showing the state of the substrate processing apparatus when performing a maintenance method according to one embodiment of the example. Figure 11 is a diagram showing the state of the substrate processing apparatus when performing a maintenance method according to one embodiment of the example. Figure 12 is a diagram showing the state of the substrate processing apparatus when performing a repair method according to one embodiment of the example. Figure 13 is a partially enlarged cross-sectional view of the support member, inner wall member, and contact member according to another embodiment of the example. Figure 14 is a partially enlarged cross-sectional view of the support member, inner wall member, and contact member according to another embodiment of the example. Figure 15 is a partially enlarged cross-sectional view of the support member, inner wall member, and contact member according to another embodiment of the example. Figure 16 is a schematic diagram of a substrate processing apparatus according to another embodiment of the example. Figure 17 is a schematic diagram of a substrate processing apparatus according to another embodiment of the example. Figures 18(a) and 18(b) are enlarged top views of a portion of the contact mechanism in a substrate processing apparatus according to another embodiment of the example. Figure 19 is a schematic diagram of a substrate processing apparatus according to another embodiment of the example. Figure 20 is a partially enlarged cross-sectional view of the contact mechanism in a substrate processing apparatus according to another embodiment of the example. Figure 21 is a schematic diagram of a substrate processing apparatus according to another embodiment of the example. Figure 22 is a perspective view showing a portion of the contact mechanism in a substrate processing apparatus according to another embodiment of the example. Figure 23 is a schematic diagram of a substrate processing apparatus according to another embodiment of the example. Figure 24 is a partially enlarged cross-sectional view of the contact mechanism in a substrate processing apparatus according to another embodiment of the example. Figure 25 is a partially enlarged cross-sectional view of the contact mechanism according to another embodiment of the example. Figure 26 is a schematic diagram of a substrate processing apparatus according to another embodiment of the example. Figures 27(a) and 27(b) are each enlarged cross-sectional views of the contact mechanism in a substrate processing apparatus according to another embodiment of the example. Figure 28 is a schematic diagram of a substrate processing apparatus according to another embodiment of the example. Figure 29 is a partially enlarged cross-sectional view of a substrate processing apparatus according to another embodiment of the example. Figure 30 is a partially enlarged cross-sectional view of a substrate processing apparatus according to another embodiment of the example. Figure 31 is a partially enlarged cross-sectional view of a substrate processing apparatus according to another embodiment of the example. Implementation

[0009] The various embodiments of the examples will now be described in detail with reference to the drawings. Furthermore, the same or equivalent parts in each drawing are assigned the same symbols.

[0010] Figure 1 is a diagram showing an embodiment of a substrate processing system according to an example. The substrate processing system PS shown in Figure 1 includes: processing modules PM1 to PM6, a transport module CTM, and a control unit MC.

[0011] The substrate processing system PS may further include: stages 2a~2d, containers 4a~4d, an aligner AN, loading locking modules LL1 and LL2, and a transport module TM. Furthermore, the number of stages, containers, and loading locking modules in the substrate processing system PS can be any number of more than one. Also, the number of processing modules in the substrate processing system PS can be any number of more than one.

[0012] Stages 2a-2d are arranged along one edge of the loading module LM. Containers 4a-4d are respectively mounted on stages 2a-2d. Each of containers 4a-4d is, for example, a container referred to as a FOUP (Front Opening Unified Pod). Each of containers 4a-4d houses a substrate W inside its interior.

[0013] The loading module LM includes a processing chamber. The pressure inside the processing chamber of the loading module LM is set to atmospheric pressure. The loading module LM includes a transport device TU1. The transport device TU1 is, for example, a transport robotic arm, and is controlled by a control unit MC. The transport device TU1 transports the substrate W through the processing chamber of the loading module LM. The transport device TU1 can transport the substrate W between each container 4a~4d and the aligner AN, between the aligner AN and each loading locking module LL1, LL2, and between each loading locking module LL1, LL2 and each container 4a~4d. The aligner AN is connected to the loading module LM. The aligner AN performs position adjustment (position correction) of the substrate W.

[0014] Loading locking modules LL1 and LL2 are respectively located between the loading module LM and the transport module TM. Each loading locking module LL1 and LL2 is equipped with a pre-pressure reduction chamber. Both loading locking modules LL1 and LL2 are connected to the loading module LM via gate valves. Furthermore, both loading locking modules LL1 and LL2 are connected to the transport module TM via gate valves.

[0015] The transport module TM includes a pressure-reducing transport processing chamber TC. The transport module TM includes a transport device TU2. The transport device TU2 is, for example, a transport robotic arm, and is controlled by a control unit MC. The transport device TU2 transports the substrate W via the transport processing chamber TC. The transport device TU2 can transport the substrate W between each loading locking module LL1, LL2 and each processing module PM1~PM6, and between any two processing modules PM1~PM6.

[0016] Each processing module PM1 to PM6 is connected to the transport module TM via a gate valve. Each processing module PM1 to PM6 is a dedicated substrate processing apparatus. At least one of the processing modules PM1 to PM6 is a substrate processing apparatus as described later in the example embodiment.

[0017] The transfer module CTM includes a processing chamber and a transfer device. The transfer module CTM is controlled by a control unit MC. The transfer module CTM is movable for connection to the processing chamber of the substrate processing apparatus. Furthermore, the transfer module CTM connects the internal space of the processing chamber of the substrate processing apparatus and the internal space of the processing chamber of the transfer module CTM in a depressurized state. The transfer device of the transfer module CTM includes a transfer arm CA (see Figure 7). The transfer arm CA transfers the inner wall components of the substrate processing apparatus between the internal space of the processing chamber of the substrate processing apparatus and the outside (in one example, the internal space of the processing chamber of the transfer module CTM).

[0018] The control unit (MC) controls all parts of the circuit board processing system (PS). The control unit (MC) can be a computer including a processor, storage device, input device, display device, etc. The control unit (MC) executes control programs stored in the storage device and controls all parts of the circuit board processing system (PS) based on processing program data stored in the storage device. The maintenance method described below, following an example embodiment, can be performed within the circuit board processing system (PS) by controlling the various parts of the PS through the control unit (MC).

[0019] Hereinafter, with reference to Figures 2 to 4, the substrate processing apparatus according to an example embodiment will be described. Figure 2 is a schematic diagram showing a substrate processing apparatus according to an example embodiment. Figures 3 and 4 are partially enlarged cross-sectional views of the substrate processing apparatus according to an example embodiment. The substrate processing apparatus 1 shown in Figures 2 to 4 can be used as one or more processing modules of a substrate processing system PS.

[0020] The substrate processing apparatus 1 is a capacitively coupled plasma processing apparatus. The substrate processing apparatus 1 includes: a processing chamber 10, a substrate support 12, a support member 14, an inner wall member 16, one or more contact members 18, and an actuator 20.

[0021] The processing chamber 10 provides internal space within itself. The processing chamber 10 is formed of a metal such as aluminum. The processing chamber 10 is electrically grounded. A corrosion-resistant film may also be provided on the surface of the processing chamber 10. The corrosion-resistant film may be formed of materials such as alumina or yttrium oxide.

[0022] The processing chamber 10 includes a side wall 10s. The side wall 10s is slightly cylindrical. The central axis of the side wall 10s extends in the vertical direction and is shown as axis AX in Figure 2. The side wall 10s is provided with a passage 10p. The internal space of the processing chamber 10 is connected to the internal space of the transport processing chamber TC of the transport module TM via the passage 10p. The passage 10p can be opened and closed by a gate valve 10g. When the substrate W is transported between the internal space of the processing chamber 10 and the outside of the processing chamber 10 (i.e., the internal space of the transport processing chamber TC), it passes through the passage 10p.

[0023] The side wall 10s is further provided with an opening 10o. The opening 10o is sized to allow the inner wall member 16 to pass through. The interior space of the processing chamber 10 can be connected to the interior space of the processing chamber of the transport module CTM via the opening 10o. The opening 10o can be opened and closed by a gate valve 10v.

[0024] The processing chamber 10 may further include a top 10u. The top 10u extends from the upper end of the side wall 10s in a direction intersecting the axis AX. The top 10u has an opening in the area intersecting the axis AX.

[0025] The substrate processing apparatus 1 further includes an exhaust device 11. The exhaust device 11 includes a pressure regulator such as an automatic pressure control valve and a pressure reducing pump such as a turbomolecular pump. The exhaust device 11 is connected to the interior space of the processing chamber 10 through the bottom of the processing chamber 10.

[0026] A substrate support 12 is disposed within the processing chamber 10. The substrate support 12 supports the substrate W placed thereon. The substrate support 12 may also include a base 22 and an electrostatic clamp 24. The base 22 has a slightly disc-shaped form. The central axis of the base 22 is substantially aligned with the axis AX. The base 22 is formed of a conductor such as aluminum. A flow channel 22f is provided in the base 22. The flow channel 22f extends, for example, in a spiral shape. The flow channel 22f is connected to a quench cooler unit 23. The quench cooler unit 23 is disposed outside the processing chamber 10. The quench cooler unit 23 supplies a heat medium (e.g., a refrigerant) to the flow channel 22f. The heat medium supplied to the flow channel 22f flows within the flow channel 22f and then returns to the quench cooler unit 23.

[0027] An electrostatic chuck 24 is mounted on a base 22. The electrostatic chuck 24 includes a body and chuck electrodes. The body of the electrostatic chuck 24 is slightly disc-shaped. The central axis of the electrostatic chuck 24 is approximately aligned with axis AX. The body of the electrostatic chuck 24 is made of ceramic. A substrate W is placed on the top surface of the body of the electrostatic chuck 24. The chuck electrodes are films formed of conductors. The chuck electrodes are disposed within the body of the electrostatic chuck 24. The chuck electrodes are connected to a DC power supply via a switch. When a voltage from the DC power supply is applied to the chuck electrodes, electrostatic attraction is generated between the electrostatic chuck 24 and the substrate W. By means of this electrostatic attraction, the substrate W is attracted to the electrostatic chuck 24 and held in place by it. The substrate processing apparatus 1 may also provide a gas conduit to supply a heat transfer gas (e.g., helium) to the gap between the back surfaces of the electrostatic chuck 24 and the substrate W.

[0028] The substrate support 12 can further support the edge ring ER placed thereon. The substrate W is placed on the electrostatic chuck 24 within the area surrounded by the edge ring ER. The edge ring ER is formed, for example, of silicon, quartz, or silicon carbide.

[0029] The substrate processing apparatus 1 may further include an insulating portion 26. The insulating portion 26 is formed of an insulator such as quartz. The insulating portion 26 may be slightly cylindrical. The insulating portion 26 extends along the outer periphery of the base 22 and the outer periphery of the electrostatic clamp 24.

[0030] The substrate processing apparatus 1 may further include a conductor portion 28. The conductor portion 28 is formed of a conductor such as aluminum. The conductor portion 28 may be slightly cylindrical. The conductor portion 28 extends along the outer peripheral surface of the insulating portion 26. The conductor portion 28 extends circumferentially outward from the radial side of the insulating portion 26. Furthermore, the radial and circumferential directions are directions based on the axis AX. The conductor portion 28 is grounded. In one example, the conductor portion 28 is grounded via the processing chamber 10. The conductor portion 28 may also be part of the processing chamber 10.

[0031] The substrate processing apparatus 1 may further include an RF power supply 31 and a bias power supply 32. The RF power supply 31 is a power source that generates plasma source RF power. The plasma source RF power has a frequency suitable for plasma generation. The frequency of the plasma source RF power is, for example, above 27 MHz. The RF power supply 31 is electrically connected to the electrodes within the substrate support 12 via a matching adapter 31m. The RF power supply 31 may also be electrically connected to the base 22. The matching adapter 31m has a matching circuit for matching the impedance of the load side of the RF power supply 31 with the output impedance of the RF power supply 31. Furthermore, the RF power supply 31 may also be electrically connected to other electrodes within the substrate support 12. Alternatively, the RF power supply 31 may also be electrically connected to the top electrode via the matching adapter 31m.

[0032] The bias power supply 32 is a power source that generates electrical bias energy. This electrical bias energy is supplied to the electrodes of the substrate support 12 to guide ions from the plasma into the substrate W. The electrical bias energy can also be bias radio frequency power. The waveform of the bias radio frequency power is a sine wave with a bias frequency. The bias frequency is, for example, below 13.56 MHz. In this case, the bias power supply 32 is electrically connected to the electrodes of the substrate support 12 via a matching converter 32m. The bias power supply 32 can also be electrically connected to the base 22. The matching converter 32m has a matching circuit for matching the impedance on the load side of the bias power supply 32 with the output impedance of the bias power supply 32. Furthermore, the bias power supply 32 can also be electrically connected to other electrodes within the substrate support 12.

[0033] Alternatively, the bias energy can be voltage pulses generated periodically at time intervals equal to the reciprocal of the bias frequency. These voltage pulses can also be negative. They can also be pulses generated by a negative DC voltage.

[0034] The support member 14 is located above the substrate support 12. The support member 14 is located below the top 10u of the processing chamber 10 and inside the side wall 10s. The support member 14 can move upward and downward within the processing chamber 10.

[0035] The substrate processing apparatus 1 may further include a lifting mechanism 34. The lifting mechanism 34 moves the support member 14 upward and downward. The lifting mechanism 34 includes a drive device (e.g., a motor) that generates power for moving the support member 14. The lifting mechanism 34 may also be located outside the processing chamber 10 and on or above the top 10u.

[0036] The substrate processing apparatus 1 may further include a telescopic bladder 36. The telescopic bladder 36 is disposed between the support member 14 and the top 10u. The telescopic bladder 36 separates the internal space of the processing chamber 10 from the external space of the processing chamber 10. The lower end of the telescopic bladder 36 is fixed to the support member 14. The upper end of the telescopic bladder 36 is fixed to the top 10u.

[0037] The support member 14 has a slightly disc-shaped form. The central axis of the support member 14 is axis AX. The support member 14 is formed of a conductor such as aluminum. In one embodiment, the support member 14 can also constitute the top electrode in a capacitively coupled plasma processing apparatus. When the support member 14 is electrically connected to the electrodes within the RF power supply 31 and the substrate support 12, it can be grounded. In this case, the support member 14 can also contact the inner wall surface of the processing chamber 10 via the connecting member 37.

[0038] In one embodiment, the support member 14 may also form a spray head together with the inner wall member 16 (described later at the top). The spray head supplies gas to the treatment chamber 10 (or the treatment space S described later). In this embodiment, the support member 14 is provided with a gas diffusion chamber 14d and a plurality of gas holes 14h.

[0039] A gas diffusion chamber 14d is provided in the support member 14. A gas supply unit 38 is connected to the gas diffusion chamber 14d. The gas supply unit 38 is located outside the processing chamber 10. The gas supply unit 38 includes a gas source for one or more gases used in the substrate processing apparatus 1, one or more flow controllers, and one or more valves. Each of the one or more gas sources is connected to the gas diffusion chamber 14d via a corresponding flow controller and a corresponding valve. A plurality of gas holes 14h extend downward from the gas diffusion chamber 14d.

[0040] In one embodiment, the support member 14 may also have a flow channel 14f therein. The flow channel 14f is connected to the quench unit 40. The quench unit 40 is located outside the processing chamber 10. The quench unit 40 supplies a heat medium (e.g., refrigerant) to the flow channel 14f. The heat medium supplied to the flow channel 14f flows within the flow channel 14f and then returns to the quench unit 40.

[0041] The inner wall component 16 can be moved between the inside and outside of the processing chamber 10. The inner wall component 16 can also be moved between the inside and outside of the processing chamber 10 via the transfer arm CA through the opening 10o.

[0042] The inner wall component 16 is formed of a metal such as silicon, silicon carbide, or aluminum. A corrosion-resistant film may also be provided on the surface of the inner wall component 16. The corrosion-resistant film may be formed of materials such as alumina or yttrium oxide.

[0043] The inner wall member 16 includes a top 16c that can be disposed above the substrate support 12 and below the support member 14. The top 16c is plate-shaped and has a slightly disc-shaped form. The top 16c is configured within the processing chamber 10 such that its central axis is located on axis AX. The top 16c can also be disposed directly below the support member 14 within the processing chamber 10. Alternatively, as shown in FIG3, a heat transfer plate 42 can be sandwiched between the bottom surface of the support member 14 and the top 16c of the inner wall member 16.

[0044] As described above, the top 16c may also be provided with a spray head together with the support member 14. In this case, the top 16c provides a plurality of gas holes 16h. The plurality of gas holes 16h penetrate the top 16c. The top 16c is arranged in the processing chamber 10 such that the plurality of gas holes 16h are respectively connected to a plurality of gas holes 14h. The gas from the gas supply unit 38 is supplied to the processing chamber 10 (or processing space S) through the gas diffusion chamber 14d, the plurality of gas holes 14h and the plurality of gas holes 16h.

[0045] In one embodiment, the inner wall member 16 may further include a side wall portion 16s. The side wall portion 16s is slightly cylindrical and extends downward from the periphery of the top 16c. The side wall portion 16s is configured within the processing chamber 10 such that its central axis lies on axis AX. The inner wall member 16 may form a processing space S together with the substrate support 12 for processing the substrate W placed on the substrate support 12. In this case, the lower end of the side wall portion 16s may also contact the conductor portion 28.

[0046] The side wall portion 16s may also be provided with a plurality of through holes. The plurality of through holes in the side wall portion 16s are for communicating with the processing space S and the space outside the side wall portion 16s. The gas in the processing space S is exhausted by the exhaust device 11 through the plurality of through holes in the side wall portion 16s and the space outside the side wall portion 16s.

[0047] Hereinafter, reference will be made to Figures 5 and 6, and also to Figures 2 through 4. Figure 5 is a top view showing an example of a contact member in a substrate processing apparatus according to one embodiment of the example. Figure 6 is a top view showing another example of a contact member in a substrate processing apparatus according to one embodiment of the example. The substrate processing apparatus 1 may also include a plurality of contact members 18, as one or more contact members.

[0048] The plurality of contact members 18 may be formed of a conductor such as metal. The plurality of contact members 18 are mounted on one of the support member 14 and the inner wall member 16. When the other member of the support member 14 and the inner wall member 16 is combined with the first member, each of the plurality of contact members 18 deforms horizontally through the other member, generating a horizontal spring reaction force on the other member. In this way, the plurality of contact members 18 detachably fix the inner wall member 16 to the support member 14.

[0049] In the embodiments shown in Figures 2-4, the plurality of contact members 18 are mounted on the support member 14. When the inner wall member 16 is combined with the support member 14, the plurality of contact members 18 deform in the horizontal direction through the inner wall member 16, thereby generating a horizontal spring reaction force on the inner wall member 16. In this way, the plurality of contact members 18 fix the inner wall member 16 to the support member 14 in a detachable manner.

[0050] In one embodiment, the bottom surface 14b of the support member 14 may also have a plurality of recesses 14r. The plurality of recesses 14r form downward openings. Similarly, the top surface 16t of the top 16c may also have a plurality of recesses 16r. The plurality of recesses 16r form upward openings. Each of the plurality of contact members 18 may also include a first portion 181 and a second portion 182. The first portion 181 is embedded in the corresponding recess 14r of the support member 14. The second portion 182 extends downward from the first portion 181 and has a spring. The spring of the second portion 182 generates a spring reaction force by being embedded in the corresponding recess 16r of the top 16c.

[0051] In one embodiment, the plurality of contact members 18 can also be attached to and detached from the support member 14. The first portion 181 is elastic, so that when the contact member 18 is removed from the support member 14, it can be removed from the corresponding recess 14r by deformation in the horizontal direction of the first portion 181. In one embodiment, each of the plurality of recesses 14r of the support member 14 may also be narrower at its lower opening.

[0052] In one embodiment, the first portion 181 can be arc-shaped in any cross-section including the axis AX, and its interior can also be hollow. Furthermore, an opening can be formed at the lower end of the first portion 181. This first portion 181 is elastic in the horizontal direction. The first portion 181 is removed from the corresponding recess 14r through the lower end openings of each of the plurality of recesses 14r when it is in a state of horizontal contraction.

[0053] In one embodiment, the second portion 182 may also extend downward from the lower end of the first portion 181 and diagonally upward from its lower end to provide a leaf spring. The second portion 182 may also have an opening at its lower end. When the second portion 182 is inserted into the corresponding recess 16r of the top 16c, it narrows horizontally by defining the wall surface of the recess 16r, thereby generating a spring reaction force on that wall surface. In this way, the plurality of contact members 18 detachably fix the inner wall member 16 to the support member 14.

[0054] In one embodiment, as shown in FIG5, the plurality of contact members 18 may also have annular shapes extending in the circumferential direction. In this embodiment, the plurality of recesses 14r and the plurality of recesses 16r each also have annular shapes extending in the circumferential direction. Furthermore, in this embodiment, with the inner wall member 16 fixed to the support member 14 within the processing chamber 10, the plurality of contact members 18, the plurality of recesses 14r, and the plurality of recesses 16r extend in the circumferential direction about the axis AX.

[0055] In another embodiment, as shown in FIG6, the plurality of contact members 18 may also be arranged along a circle or a plurality of concentric circles. In this embodiment, the plurality of recesses 14r and the plurality of recesses 16r are also arranged along a circle or a plurality of concentric circles. Furthermore, in this embodiment, with the inner wall member 16 fixed to the support member 14 within the processing chamber 10, the plurality of contact members 18, the plurality of recesses 14r, and the plurality of recesses 16r are arranged circumferentially around the axis AX.

[0056] Referring again to Figures 2-4. The actuator 20 moves the inner wall member 16 downward to release the inner wall member 16 from the support member 14. In one embodiment, the actuator 20 includes a drive device 20d. The actuator 20 may also include a plurality of levers 20r.

[0057] The drive unit 20d is located outside the processing chamber 10. The drive unit 20d generates power to move its drive shaft 20m up and down. The drive unit 20d may also include a power cylinder such as a cylinder or a motor. The drive unit 20d is fixed to the support member 44 outside the processing chamber 10.

[0058] The complex linkage 20r system is coupled to the drive shaft 20m. The complex linkage 20r system extends downward from the drive shaft 20m. The complex linkage 20r system is circumferentially arranged around the axis AX. The complex linkage 20r system is arranged at equal intervals.

[0059] The support member 14 is provided with a plurality of through holes extending in the vertical direction. These through holes extend from the top surface of the support member 14 through the gas diffusion chamber 14d to the bottom surface of the support member 14, thus penetrating the support member 14. A plurality of rods 20r are inserted into the plurality of through holes in the support member 14. An O-ring or similar sealing member 48 is provided between the support member 14 and each of the rods 20r. Furthermore, within the gas diffusion chamber 14d, the rods 20r pass through the inner hole of the cylindrical member 46.

[0060] The multiple levers 20r move up and down via the drive device 20d. With the inner wall member 16 fixed to the support member 14, the multiple levers 20r are configured such that their lower ends are at the same horizontal level as or above the top surface 16t of the top 16c of the inner wall member 16. When the inner wall member 16 is removed from the support member 14, the multiple levers 20r move via the drive device 20d, causing the inner wall member 16 to move downwards while its lower ends abut against the top surface 16t of the top 16c of the inner wall member 16.

[0061] According to the substrate processing apparatus 1, the inner wall member 16 is deformed by the plurality of contact members 18, thereby generating a spring reaction force on the inner wall member 16 in the horizontal direction. This fixes the inner wall member 16 to the support member 14. Furthermore, by using the actuator 20 to move the inner wall member 16 downward against the spring reaction force of the plurality of contact members 18, the fixation of the inner wall member 16 to the support member 14 can be easily released. After the inner wall member 16 is released from the support member 14, it can be moved from the inside of the processing chamber 10 to the outside through the opening 10o of the side wall 10s of the processing chamber 10. Therefore, the inner wall member 16 can be easily repaired using the substrate processing apparatus 1.

[0062] Furthermore, the substrate processing apparatus 1 may also include a single contact member 18. In this case, the number of recesses 14r and 16r is one each.

[0063] Hereinafter, referring to Figures 7 to 12, a maintenance method for a substrate processing apparatus in one embodiment of the example will be described. Figures 7 to 12 are diagrams showing the state of the substrate processing apparatus when performing the maintenance method according to one embodiment of the example. In the maintenance method, each part of the substrate processing system PS is controlled by the control unit MC.

[0064] In the repair method, the plurality of contact members 18 are mounted on one of the support member 14 and the inner wall member 16. When the repair method is applied to the substrate processing apparatus 1, the plurality of contact members 18 are mounted on the support member 14. Specifically, as shown in FIG7, the base 50 is moved from the outside of the processing chamber 10 into the processing chamber 10 by a transfer arm CA. The base 50 has a plurality of recesses on its top surface. The second part 182 of the plurality of contact members 18 is embedded in the plurality of recesses of the base 50. The base 50 is moved into the processing chamber 10 so that the plurality of contact members 18 are respectively located below the plurality of recesses 14r of the support member 14.

[0065] Next, the transport arm CA is moved upward, or the support member 14 is moved downward by the lifting mechanism 34. As a result, as shown in FIG8, the first portion 181 of the plurality of contact members 18 will be embedded in the plurality of recesses 14r of the support member 14, and the plurality of contact members 18 will be mounted on the support member 14. Afterward, the transport arm CA is withdrawn from the inside of the processing chamber 10 to the outside.

[0066] Next, the inner wall component 16 is moved from the outside of the processing chamber 10 through the opening 10o into the interior of the processing chamber 10 by the transport arm CA. Then, either the support component 14 or the inner wall component 16 is moved vertically. That is, the support component 14 is moved downwards by the lifting mechanism 34, or the inner wall component 16 is moved upwards by the transport arm CA. As a result, as shown in FIG9, the inner wall component 16 is detachably fixed to the support component 14.

[0067] The plurality of contact members 18 are deformed in the horizontal direction by one of the support member 14 and the inner wall member 16, thereby generating a spring reaction force on the other member. In the substrate processing apparatus 1, the other member is the inner wall member 16. Specifically, the second portion 182 of each of the plurality of contact members 18 is embedded in the corresponding recess 16r and shrinks in the horizontal direction, generating a spring reaction force on the wall surface of the corresponding recess 16r. In this way, the inner wall member 16 is fixed to the support member 14. After the inner wall member 16 is fixed to the support member 14, the transport arm CA is withdrawn from the inside of the processing chamber 10 to the outside.

[0068] In the maintenance method, in order to maintain (e.g., replace) the inner wall component 16, it is moved from the inside of the processing chamber 10 to the outside of the processing chamber 10. Therefore, the transport arm CA enters the inside of the processing chamber 10 from the outside of the processing chamber 10 through the opening 10o.

[0069] Next, the actuator 20 causes the inner wall member 16 to move downward against the spring reaction force of the plurality of contact members 18. This releases the fixation of the inner wall member 16 by the plurality of contact members 18. As shown in FIG10, the downwardly moving inner wall member 16 is transferred to the transport arm CA. Then, the inner wall member 16 is moved from inside the processing chamber 10 through the opening 10o to the outside of the processing chamber 10 by the transport arm CA.

[0070] In the maintenance method, the plurality of contact members 18 can also be removed for maintenance (e.g., replacement). Therefore, as shown in FIG11, the base 54 is moved from the outside of the processing chamber 10 through the opening 10o into the interior of the processing chamber 10 by the transport arm CA. The base 54 has a plurality of recesses 54r on its top surface. The upper opening of each of the plurality of recesses 54r is narrowed by the protrusion 54p. The base 54 is configured such that the plurality of recesses 54r are located below the plurality of contact members 18.

[0071] Next, the transport arm CA is moved upward, or the support member 14 is moved downward by the lifting mechanism 34. As a result, the second portion 182 of each of the plurality of contact members 18 is embedded in the corresponding recess 54r. After passing through the upper opening of the corresponding recess 54r, the second portion 182 of each of the plurality of contact members 18 expands to have a width greater than the width of the upper opening. Next, the transport arm CA is moved downward, or the support member 14 is moved upward by the lifting mechanism 34. As a result, as shown in FIG12, the plurality of contact members 18 are removed from the support member 14 and transferred to the base 54. Afterward, the plurality of contact members 18 are moved from the inside of the processing chamber 10 to the outside of the processing chamber 10 by the transport arm CA.

[0072] Hereinafter, referring to FIG13, a support member, inner wall member, and contact member according to another embodiment of the example will be described. FIG13 is a partially enlarged cross-sectional view of the support member, inner wall member, and contact member according to another embodiment of the example. The support member, inner wall member, and contact member of the embodiment shown in FIG13 can be used in the substrate processing apparatus 1.

[0073] In the embodiment shown in FIG13, the top surface 16t of the top 16c is provided with a plurality of protrusions 16p. The plurality of protrusions 16p protrude upwards more than other parts of the top surface 16t of the top 16c. Also, in the embodiment shown in FIG13, the bottom surface 14b of the support member 14 is provided with a plurality of recesses 14r. The plurality of recesses 14r form openings facing downwards.

[0074] In the embodiment shown in Figure 13, the plurality of contact members 18 can be formed of a conductor such as metal. The plurality of contact members 18 are fixed within the plurality of recesses 14r. The wall surface of the support member 14 defining each of the plurality of recesses 14r can also be formed with internal threads. The outer peripheral surface of each of the plurality of contact members 18 can also be formed with external threads. Each of the plurality of contact members 18 is fixed within the corresponding recess 14r by engaging with the internal threads in the corresponding recess 14r.

[0075] Each of the plurality of contact members 18 has a recess 18r that forms an opening facing downwards. Each of the plurality of contact members 18 includes a spring 183. The spring 183 is disposed in the recess 18r. The lower end of the spring 183 is directly or indirectly fixed to the wall surface defining the recess 18r, so that the spring 183 can deform in the horizontal direction. When the corresponding protrusion 16p is inserted into the recess 18r, the spring 183 deforms in the horizontal direction, and generates a spring reaction force on the protrusion 16p in the horizontal direction. In this way, the inner wall member 16 is fixed to the support member 14. In the embodiment shown in FIG13, when the inner wall member 16 is moved downwards by the actuator 20, the fixation of the inner wall member 16 to the support member 14 can also be easily released.

[0076] As shown in Figure 13, the spring 183 can also be fixed to the wall of the defined recess 18r by means of the floating mechanism 184. The floating mechanism 184 can absorb the positional displacement of the protrusion 16p in the horizontal direction.

[0077] Hereinafter, referring to FIG14, a support member, inner wall member, and contact member according to another embodiment of the example will be described. FIG14 is a partially enlarged cross-sectional view of the support member, inner wall member, and contact member according to another embodiment of the example. The support member, inner wall member, and contact member of the embodiment shown in FIG14 can be used in the substrate processing apparatus 1.

[0078] In the embodiment shown in Figure 14, the bottom surface 14b of the support member 14 is provided with a plurality of recesses 14r. The plurality of recesses 14r form openings facing downwards. In the embodiment shown in Figure 14, the top surface of the top 16c is provided with a plurality of protrusions 16p. The plurality of protrusions 16p may also include a top 161 and a bottom 162. The top 161 is provided on the bottom 162. The width of the top 161 may also be greater than the width of the bottom 162.

[0079] In the embodiment shown in Figure 14, the plurality of contact members 18 may be formed of a conductor such as metal. Each of the plurality of contact members 18 is fixed to the top 16c in such a way that it covers the corresponding protrusion 16p. Each of the plurality of contact members 18 includes a cover portion 185. The cover portion 185 has a hollow portion with an opening at its lower end. The cover portion 185 covers the corresponding protrusion 16p housed within its hollow portion. The wall surface of the cover portion 185 defining the hollow portion is in contact with the outer surfaces of the top 161 and bottom 162 of the corresponding protrusion 16p. When the cover portion 185 is installed on the corresponding protrusion 16p, it covers the corresponding protrusion 16p with its lower end opening enlarged.

[0080] Each of the plurality of contact members 18 further includes a spring 186. The spring 186 is located on the side of the cover portion 185. The lower end of the spring 186 is fixed to the lower end of the cover portion 185. The spring 186 extends upward from the lower end of the cover portion 185 in a manner that allows it to deform in the horizontal direction. When each of the plurality of contact members 18 engages with its corresponding protrusion 16p in its corresponding recess 14r, the spring 186 deforms in the horizontal direction, generating a spring reaction force on the support member 14 in the horizontal direction. This fixes the inner wall member 16 to the support member 14. In the embodiment shown in FIG. 14, when the inner wall member 16 is moved downward by the actuator 20, the fixation of the inner wall member 16 to the support member 14 can be easily released.

[0081] Hereinafter, referring to FIG15, a support member, inner wall member, and contact member according to another embodiment of the example will be described. FIG15 is a partially enlarged cross-sectional view of the support member, inner wall member, and contact member according to another embodiment of the example. The support member, inner wall member, and contact member of the embodiment shown in FIG15 can be used in the substrate processing apparatus 1.

[0082] In the embodiment shown in Figure 15, the bottom surface 14b of the support member 14 has a single recess. The recess on the bottom surface 14b of the support member 14 is approximately circular when viewed from above. In the embodiment shown in Figure 15, the top surface 16t of the top 16c has a single protrusion. The protrusion on the top surface 16t of the top 16c is approximately circular when viewed from above.

[0083] In the embodiment shown in FIG15, the contact member 18 is a helical spring washer. In the embodiment shown in FIG15, the contact member 18 may be formed of a conductor such as metal. The contact member 18 is configured to extend circumferentially along the inner wall surface of the recess defining the support member 14. By inserting the protrusion of the top 16c into the recess of the support member 14, the contact member 18, i.e., the helical spring washer, is clamped between the outer peripheral surface of the protrusion of the top 16c and the inner wall surface of the recess defining the support member 14. Thereby, the contact member 18 deforms in the horizontal direction, generating a spring reaction force on the outer peripheral surface of the inner wall member 16, i.e., the protrusion of the top 16c. This fixes the inner wall member 16 to the support member 14. In the embodiment shown in FIG15, when the inner wall member 16 is moved downward by the actuator 20, the fixation of the inner wall member 16 to the support member 14 can be easily released.

[0084] Hereinafter, referring to FIG16, another embodiment of the substrate processing apparatus according to the example will be described. FIG16 is a schematic diagram showing another embodiment of the substrate processing apparatus according to the example. The substrate processing apparatus 1B shown in FIG16 differs from the substrate processing apparatus 1 in that it has an inner wall member 16B instead of an inner wall member 16. The inner wall member 16B has the same top 16c as the inner wall member 16, but does not have a side wall portion 16s. The other configurations of the substrate processing apparatus 1B are the same as the corresponding configuration of the substrate processing apparatus 1.

[0085] The following describes several other embodiments of the substrate processing apparatus according to the examples. Each of the following exemplary embodiments includes a contact mechanism that electrically connects the inner wall member 16 to the grounded conductor portion 28. The inner wall member 16 is formed of a conductive material. The conductor portion 28 is cylindrical and extends along the outer periphery of the substrate support 12. The contact mechanism electrically connects the lower end 16e of the sidewall portion 16s of the inner wall member 16 to the conductor portion 28.

[0086] Referring to Figures 17, 18(a), and 18(b). Figure 17 is a schematic diagram showing a substrate processing apparatus according to another embodiment of the example. Figures 18(a) and 18(b) are each enlarged top views showing a portion of the contact mechanism in the substrate processing apparatus according to another embodiment of the example. The substrate processing apparatus 1C shown in Figure 17 differs from the substrate processing apparatus 1 in that it includes the contact mechanism 60C. As shown in Figures 17, 18(a), and 18(b), the contact mechanism 60C includes: a cylindrical body 61, a pressing body 62, and a driving part 63.

[0087] The cylindrical body 61 is formed of a conductive material such as aluminum. The cylindrical body 61 is electrically connected to the conductor portion 28 and extends along the outer periphery of the conductor portion 28. The pressing body 62 is formed of a conductive material such as aluminum. The pressing body 62 is disposed between the substrate support 12 and the cylindrical body 61. The drive unit 63 rotates the cylindrical body 61 circumferentially. The drive unit 63 includes, for example, a motor. The contact mechanism 60C presses the pressing body 62 against the outer peripheral surface of the lower end 16e of the sidewall portion 16s by the circumferential rotation of the cylindrical body 61. Thereby, the contact mechanism 60C electrically connects the inner wall member 16 to the conductor portion 28 via the pressing body 62 and the cylindrical body 61.

[0088] In one example, the conductor portion 28 includes a plurality of radially projecting guide portions 28p. The plurality of guide portions 28p are arranged circumferentially. The contact mechanism 60C also includes a plurality of pushers 62. The plurality of pushers 62 are arranged circumferentially. Each of the plurality of pushers 62 has a hole 62h for insertion of a corresponding guide portion of the plurality of guide portions 28p. Each of the plurality of pushers 62 can move radially by inserting into the corresponding guide portion of its hole 62h. Each of the plurality of pushers 62 further includes a protrusion 62p projecting radially outward. In the illustrated example, each of the plurality of pushers 62 has a pair of rib-like protrusions 62p on both sides of the hole 62h. The cylindrical body 61 includes a plurality of radially inward projecting protrusions 61p. The plurality of protrusions 61p are arranged circumferentially.

[0089] As shown in Figure 18(a), when the protrusions 62p of each of the plurality of pressing bodies 62 are not in contact with the corresponding protrusions of the plurality of protrusions 61p, the plurality of pressing bodies 62 are not in contact with the lower end 16e of the side wall portion 16s. As shown in Figure 18(b), when the cylindrical body 61 is rotated, and the corresponding protrusions of the plurality of protrusions 61p are in contact with the protrusions 62p of each of the plurality of pressing bodies 62, the pressing bodies 62 will press against the outer peripheral surface of the lower end 16e of the side wall portion 16s. As a result, the inner wall member 16 is electrically connected to the conductor portion 28 via the pressing bodies 62 and the cylindrical body 61. Furthermore, in the state shown in Figure 18(b), the lower end 16e of the side wall portion 16s is clamped between each of the plurality of pressing bodies 62 and the insulating portion 26.

[0090] Hereinafter, refer to Figures 19 and 20. Figure 19 is a schematic diagram showing another embodiment of the substrate processing apparatus according to the example. Figure 20 is a partially enlarged cross-sectional view of the contact mechanism in another embodiment of the substrate processing apparatus according to the example. The substrate processing apparatus 1D shown in Figure 19 differs from substrate processing apparatus 1 at the point containing the contact mechanism 60D.

[0091] As shown in Figures 19 and 20, in the substrate processing apparatus 1D, the conductor portion 28 has a recess 28r extending circumferentially at its upper end. The contact mechanism 60D includes a contact member 64. The contact member 64 is an elastic conductive member, such as a helical spring washer. The contact member 64 extends circumferentially in the recess 28r and is electrically connected to the conductor portion 28. In the contact mechanism 60D, the contact member 64 is in elastic contact with the lower end 16e of the sidewall portion 16s disposed in the recess 28r. Thereby, the contact mechanism 60D electrically connects the inner wall member 16 to the conductor portion 28 via the contact member 64. Furthermore, as shown in the figures, a pair of contact members 64 can also clamp the lower end 16e of the sidewall portion 16s in the recess 28r.

[0092] Hereinafter, refer to Figures 21 and 22. Figure 21 is a schematic diagram showing another embodiment of the substrate processing apparatus according to the example. Figure 22 is an enlarged perspective view showing a portion of the contact mechanism in another embodiment of the substrate processing apparatus according to the example. The substrate processing apparatus 1E shown in Figure 21 differs from the substrate processing apparatus 1 at the point containing the contact mechanism 60E.

[0093] As shown in Figures 21 and 22, the contact mechanism 60E includes a plurality of male connectors 601E and a plurality of female connectors 602E. The plurality of male connectors 601E are mounted on the lower end 16e of the side wall portion 16s and arranged circumferentially. The plurality of female connectors 602E are mounted on the upper end of the conductor portion 28 and arranged circumferentially. The contact mechanism 60E electrically connects the inner wall member 16 to the conductor portion 28 by engaging each of the plurality of male connectors 601E with its corresponding female connector among the plurality of female connectors 602E. Alternatively, the plurality of male connectors 601E can also be mounted on the upper end of the conductor portion 28, and the plurality of female connectors 602E can also be mounted on the lower end 16e of the side wall portion 16s.

[0094] Hereinafter, refer to Figures 23 and 24. Figure 23 is a schematic diagram showing a substrate processing apparatus according to another embodiment of the example. Figure 24 is a partially enlarged cross-sectional view of the contact mechanism in the substrate processing apparatus according to another embodiment of the example. The substrate processing apparatus 1F shown in Figure 23 differs from substrate processing apparatus 1 at the point containing the contact mechanism 60F.

[0095] The contact mechanism 60F includes a contact member 65. The contact member 65 is a flexible thin film formed of a conductive material. The contact member 65 is disposed in a recess provided by the conductor portion 28. The contact member 65 is supported by and electrically connected to the conductor portion 28. Furthermore, the contact member 65 is configured to abut against the bottom surface provided by the lower end 16e of the sidewall portion 16s. The contact mechanism 60F electrically connects the inner wall member 16 to the conductor portion 28 by pressing the contact member 65 against the bottom surface of the sidewall portion 16s. Additionally, the bottom surface of the lower end 16e of the sidewall portion 16s can also be provided by a film 16f of the lower end 16e. The film 16f can also be formed of a conductive film or carbon nanotubes.

[0096] In one example, the contact mechanism 60F can also use the pressure of a fluid (e.g., gas) to press the contact member 65 against the bottom surface of the sidewall portion 16s. In this example, the contact mechanism 60F may further include a push pin 66. The push pin 66 is configured to position the contact member 65 between its front end and the bottom surface of the sidewall portion 16s. The push pin 66 presses the contact member 65 against the bottom surface of the sidewall portion 16s by the pressure of gas supplied from the gas supplier 67. A spring 66s may also be connected to the push pin 66 to impart potential energy to the push pin 66 in the separation direction from the contact member 65.

[0097] Referring now to Figure 25, which is a partially enlarged cross-sectional view of a contact mechanism according to another embodiment of the example, the contact mechanism shown in Figure 25 includes a piezoelectric element 68. The piezoelectric element 68 is supported by an insulating portion 26 and is disposed below the lower end 16e of the sidewall portion 16s. The piezoelectric element 68 includes a piezoelectric ceramic portion 68a and a pair of electrodes 68b and 68c. The piezoelectric ceramic portion 68a is disposed between the pair of electrodes 68b and 68c. A conductive material 69 is fixed to the top surface of the piezoelectric element 68. The conductive material 69 is electrically connected to the conductor portion 28. By applying a voltage from a power supply 68p to the electrode 68c, the piezoelectric element 68 expands towards the lower end 16e of the sidewall portion 16s. This causes the conductive material 69 to press against the bottom surface of the lower end 16e of the sidewall portion 16s. As a result, the inner wall member 16 is electrically connected to the conductor portion 28.

[0098] Hereinafter, reference will be made to Figures 26, 27(a), and 27(b). Figure 26 is a schematic diagram showing a substrate processing apparatus according to another embodiment of the example. Figures 27(a) and 27(b) are each partially enlarged cross-sectional views of the contact mechanism in the substrate processing apparatus according to another embodiment of the example. The substrate processing apparatus 1G shown in Figure 26 differs from substrate processing apparatus 1 at the point containing the contact mechanism 60G.

[0099] In the substrate processing apparatus 1G, the conductor portion 28 has a slightly cylindrical shape. The conductor portion 28 has a hollow portion 28h extending circumferentially relative to its central axis (i.e., axis AX). Furthermore, the conductor portion 28 also has a plurality of openings 28o extending between the hollow portion 28h and the space outside the conductor portion 28. The plurality of openings 28o can also be arranged circumferentially. Furthermore, the plurality of openings 28o can also be arranged at equal intervals.

[0100] The contact mechanism 60G includes: an expandable sealing portion 71, a plurality of pressing bodies 72, one or more elastic bodies 73, and an air supply portion 74. The expandable sealing portion 71 is disposed in the hollow portion 28h. The expandable sealing portion 71 may also be annular and extend circumferentially in the hollow portion 28h. The air supply portion 74 supplies air to the expandable sealing portion 71. The expandable sealing portion 71 expands radially by means of the air from the air supply portion 74.

[0101] Each of the plurality of push-fit bodies 72 is formed of a conductive material such as a metal (e.g., aluminum). Each of the plurality of push-fit bodies 72 includes a first portion 721 and a second portion 722. The first portion 721 is disposed between the expandable sealing portion 71 and the wall 28w of the conductor portion 28 that defines the plurality of openings 28o. The second portion 722 extends from the first portion 721 into the corresponding opening in the plurality of openings 28o. In one embodiment, the front end 723 (radial front end) of the second portion 722 may also be formed of a contact band.

[0102] One or more elastic bodies 73 are each formed of a conductive material. One or more elastic bodies 73 are disposed between the first portion 721 and the wall 28w. Each of the one or more elastic bodies 73 may also be annular and extend circumferentially within the hollow portion 28h. Each of the one or more elastic bodies 73 may, for example, be a helical coil spring. Furthermore, in the illustrated example, one of the two elastic bodies 73 is disposed above the second portion 722, and the other of the two elastic bodies 73 is disposed below the second portion 722.

[0103] As shown in Figure 27(a), the second portion 722 of each of the plurality of pushers 72 does not contact the inner circumferential surface of the lower end 12e of the inner wall member 16 when the expandable sealing portion 71 is not expanded. On the other hand, as shown in Figure 27(b), by expanding the expandable sealing portion 71 radially, each of the plurality of pushers 72 clamps one or more elastic bodies 73 between the first portion 721 and the wall 28w, and the front end 723 of the second portion 722 abuts against the inner circumferential surface of the lower end 12e.

[0104] The contact mechanism 60G moves the plurality of pressing bodies 72 radially so that the front end 723 of the second part 722 abuts against the inner peripheral surface of the lower end 12e, thereby electrically connecting the inner wall member 16 to the conductor portion 28 via the plurality of pressing bodies 72 and one or more elastic bodies 73. Thus, the inner wall member 16 can be electrically connected to the conductor portion 28 without friction occurring between the components of the contact mechanism 60G and the inner wall member 16. Therefore, the contact mechanism 60G can suppress particles generated by friction. Furthermore, in the substrate processing apparatus 1G, the number of pressing bodies 72 and the number of openings 28o can each be one.

[0105] Hereinafter, reference will be made to Figures 28 and 29. Figure 28 is a schematic diagram showing another embodiment of the substrate processing apparatus according to the example. Figure 29 is a partially enlarged cross-sectional view of another embodiment of the substrate processing apparatus according to the example. Hereinafter, the differences between the substrate processing apparatus 1H shown in Figure 28 and the substrate processing apparatus 1 will be explained.

[0106] In the substrate processing apparatus 1H, the conductor portion 28 has a slightly cylindrical shape. The conductor portion 28 is disposed above the bottom of the processing chamber 10 in a manner that allows it to slide freely in the horizontal direction. In one embodiment, the substrate processing apparatus 1H may further include a thrust bearing 77. The thrust bearing 77 is disposed between the bottom of the processing chamber 10 and the head of the bolt 78 screwed to the bottom. The conductor portion 28 is slidably supported above the bottom of the processing chamber 10 by the thrust bearing 77. In one embodiment, the conductor portion 28 has a diameter reduction portion 28s at its lower end. The diameter reduction portion 28s is disposed between the thrust bearing 77 and the head of the bolt 78. Furthermore, in the illustrated example, two thrust bearings 77 are provided between the bottom of the processing chamber 10 and the head of the bolt 78. One of the two thrust bearings 77 is disposed between the bottom of the processing chamber 10 and the diameter reduction portion 28s. The other of the two thrust bearings 77 is positioned between the diameter reduction section 28s and the head of the bolt 78. A washer 79 is positioned between the other of the two thrust bearings 77 and the head of the bolt 78.

[0107] The conductor portion 28 is slightly cylindrical, and its top 28u has an outer peripheral surface 28t that is formed in a push-pull shape. The inner peripheral surface 16i of the lower end 16e of the side wall portion 16s of the inner wall member 16 is formed in a push-pull shape to correspond with the outer peripheral surface 28t. The outer peripheral surface 28t and the inner peripheral surface 16i are in direct or indirect contact. In this way, the inner wall member 16 is electrically connected to the conductor portion 28. In one embodiment, a contact strip 28b is provided on the outer peripheral surface 28t. The outer peripheral surface 28t and the inner peripheral surface 16i are indirectly in contact with each other via the contact strip 28b. Furthermore, the lower end of the conductor portion 28 and the bottom of the processing chamber 10 can also be electrically connected via a connecting member 76. The connecting member 76 is a flexible and conductive member and is fixed to the bottom of the processing chamber 10. The connecting member 76 is, for example, a contact strip or a conductive spiral.

[0108] In the substrate processing apparatus 1H, even if there is a misalignment between the central axis of the inner wall member 16 and the central axis of the conductor portion 28, the conductor portion 28 can be moved horizontally to ensure uniform electrical contact between the lower end 16e of the inner wall member 16 and the top 28u of the conductor portion 28 in the circumferential direction. Furthermore, since there is less friction between the lower end 16e of the inner wall member 16 and the top 28u (or contact strip 28b) of the conductor portion 28, the generation of particles can be suppressed.

[0109] Hereinafter, please refer to Figure 30. Figure 30 is a partially enlarged cross-sectional view of a substrate processing apparatus according to another embodiment of the example. Hereinafter, the differences between the structure shown in Figure 30 and the structure of the substrate processing apparatus shown in Figures 28 and 29 will be explained. As shown in Figure 30, the bolt 78 can also be screwed into the thrust nut 78n provided below the diameter reduction portion 28s, and the diameter reduction portion 28s can also be clamped between the head of the bolt 78 and the thrust nut 78n. Furthermore, the thrust bearing 77 can also be provided in the hollow portion at the bottom of the processing chamber 10, or it can be disposed between the upper wall defining the hollow portion and the thrust nut 78n.

[0110] Hereinafter, refer to Figure 31. Figure 31 is a partially enlarged cross-sectional view of a substrate processing apparatus according to another embodiment of the example. In the embodiments of the various examples described above, as shown in Figure 31, the inner wall member 16 can be released from the support member 14 by using an expandable sealing part 80 instead of using the actuator 20.

[0111] Specifically, the expandable seal 80 is provided in the recess provided by the bottom surface 14b of the support member 14. By supplying air from the air supply unit 81, the expandable seal 80 expands downward. By expanding downward, the inner wall member 16 moves downward, thereby releasing the inner wall member 16 from the support member 14.

[0112] The above describes various implementation styles, but is not limited to the implementation styles described above. Various additions, omissions, substitutions, and changes can be made. Furthermore, elements from different implementation styles can be combined to form other implementation styles.

[0113] The transport module CTM may also be immovable and connected to and fixed to the processing chamber of the substrate processing apparatus according to the various embodiments described above. Alternatively, the transport module TM may be used as a module for transporting the inner wall member 16 between the inside and outside of the processing chamber 10, in place of the transport module CTM.

[0114] Hereinafter, various embodiments of the present invention are described in [E1] to [E31].

[0115] [E1] A substrate processing apparatus, comprising: The processing chamber includes side walls that provide openings; A substrate support is located within the processing chamber; A support member is disposed above the substrate support; An inner wall member includes a top that can be disposed above the substrate support and below the support member; A contact member is installed on one of the support member and the inner wall member, and the inner wall member is detachably fixed to the support member by generating a horizontal spring reaction force on the other member; and An actuator moves the inner wall component downward to release the inner wall component from the support component.

[0116] In the substrate processing apparatus of Embodiment [E1], the contact member is deformed by one of the support member and the inner wall member, thereby generating a spring reaction force on the other member in the horizontal direction. This fixes the inner wall member to the support member. Furthermore, by using an actuator to move the inner wall member downwards against the spring reaction force of the contact member, the fixation of the inner wall member to the support member can be easily released. The inner wall member, now freed from fixation to the support member, can be moved from inside the processing chamber to the outside through an opening in the side wall of the processing chamber. Therefore, according to Embodiment [E1], the inner wall member can be easily repaired.

[0117] [E2] As described in [E1], the substrate processing apparatus, wherein, A recess is provided on the bottom surface of the support member; A recess is provided on the top surface of the top; The contact member includes: The first part is embedded in the recess of the support member; and The second part extends downward from the first part and has a spring that generates the spring reaction force by being embedded in the recess at the top.

[0118] [E3] As described in [E2], the substrate processing apparatus, wherein, The contact member allows for the attachment and removal of the support member. The first part is elastic, so that when the contact member is removed from the support member, it can be removed from the recess of the support member by the deformation of the first part in the horizontal direction.

[0119] [E4] As described in [E3], the substrate processing apparatus, wherein, The recess of the support member is narrower at the lower end opening of the recess of the support member.

[0120] [E5] As described in [E1], the substrate processing apparatus, wherein, The top surface of the top has a protrusion; The contact member is fixed within a recess provided on the bottom surface of the support member, and the recess provides an opening facing downwards; The contact member includes a spring disposed within the recess of the contact member; The spring of the contact member generates the spring reaction force by inserting the protrusion at the top into the recess of the contact member.

[0121] [E6] As described in [E5], the substrate processing apparatus, wherein, The contact member further includes a floating mechanism that supports the spring.

[0122] [E7] As described in [E5] or [E6], the substrate processing apparatus, wherein, The bottom surface of the support member has an internal thread. The outer peripheral surface of the contact member is formed with an external thread that engages with the internal thread.

[0123] [E8] As described in [E1], the substrate processing apparatus, wherein, A recess is provided on the bottom surface of the support member; The top surface of the top has a protrusion; The contact member is fixed to the top in such a way that it covers the protrusion, and has a spring that generates the spring reaction force by embedding the protrusion and the contact member into the recess of the support member.

[0124] [E9] As described in [E1], the substrate processing apparatus, wherein, A recess is provided on the bottom surface of the support member; The top surface of the top has a protrusion; The contact component is a helical spring washer disposed along the inner wall surface defining the recess; The spring reaction force is generated by inserting the protrusion into the recess of the helical spring washer.

[0125] [E10] The substrate processing apparatus described in any of [E1] to [E9], wherein, The inner wall component can be moved between the inside and outside of the processing chamber via a transport arm through the opening.

[0126] [E11] The substrate processing apparatus described in any of [E1] to [E10] further includes: The heat transfer plate is held between the support member and the top.

[0127] [E12] The substrate processing apparatus described in any of [E1] to [E11], wherein, The support structure and the top form a spray head to supply gas to the treatment chamber.

[0128] [E13] The substrate processing apparatus described in any of [E1] to [E12], wherein, The support structure has channels for the flow of the heating medium.

[0129] [E14] The substrate processing apparatus described in any of [E1] to [E13], wherein, The inner wall member further includes a side wall portion extending downward from the periphery of the top, and together with the substrate support, forms a processing space in which a substrate placed on the substrate support is processed.

[0130] [E15] As described in [E14], the substrate processing apparatus, wherein, The substrate processing device is a plasma processing device.

[0131] [E16] The substrate processing apparatus as described in [E15] further includes: The conductor portion has a cylindrical shape, extends along the outer periphery of the substrate support, and is grounded; and The contact mechanism electrically connects the lower end of the sidewall portion to the conductor portion, thereby electrically connecting the inner wall member to the conductor portion.

[0132] [E17] As described in [E16], the substrate processing apparatus, wherein, The contact mechanism includes: A cylindrical body, formed of a conductive material, electrically connected to the conductor portion, and extending along the outer periphery of the conductor portion; A pusher, formed of a conductive material, is disposed between the substrate support and the cylindrical body; and The drive unit causes the cylindrical body to rotate circumferentially; The contact mechanism works by rotating the cylindrical body circumferentially to press the pusher against the outer peripheral surface of the lower end of the side wall portion, thereby electrically connecting the inner wall component to the conductor portion via the pusher and the cylindrical body.

[0133] [E18] As described in [E16], the substrate processing apparatus, wherein, The upper end of the conductor portion is provided with a recess extending in the circumferential direction; The contact mechanism includes another contact member that is flexible; The other contact member extends circumferentially within the recess of the conductor portion and is electrically connected to the conductor portion; The other contact member is in elastic contact with the lower end of the sidewall portion in the recess, thereby electrically connecting the inner wall member to the conductor portion via the other contact member.

[0134] [E19] As described in [E16], the substrate processing apparatus, wherein, The contact mechanism includes: A plurality of male connectors are mounted on one of the lower end of the sidewall portion and the upper end of the conductor portion; and A plurality of female connectors are mounted on one of the lower ends of the side wall portion and the upper ends of the conductor portion; The contact mechanism electrically connects the inner wall member to the conductor by engaging each of the plurality of male connectors with the corresponding female connector among the plurality of female connectors.

[0135] [E20] As described in [E16], the substrate processing apparatus, wherein, The contact mechanism includes another contact member configured to abut against the bottom surface provided at the lower end of the sidewall portion; The contact mechanism is designed to electrically connect the inner wall component to the conductor portion by pressing the other contact member against the bottom surface of the side wall portion.

[0136] [E21] As described in [E20], the substrate processing apparatus, wherein, The contact mechanism uses fluid pressure to press the other contact member against the bottom surface of the side wall.

[0137] [E22] As described in [E20], the substrate processing apparatus, wherein, The contact mechanism further includes a piezoelectric element that causes the other contact member to press against the bottom surface of the sidewall portion.

[0138] [E23] The substrate processing apparatus described in any of [E1] to [E22], wherein, This support component forms the top electrode of a capacitively coupled plasma processing device.

[0139] [E24] As described in [E16], the substrate processing apparatus, wherein, The conductor portion includes: a hollow portion extending circumferentially relative to its central axis; and an opening extending between the hollow portion and the space outside the conductor portion. The contact mechanism includes: An expandable sealing portion is provided in the hollow portion; A pusher body, formed of a conductive material, comprises: a first portion disposed within the hollow portion between the expandable sealing portion and the wall of the conductor portion defining the opening; and a second portion extending from the first portion into the opening; An elastomer, formed of a conductive material, is disposed between the first portion and the wall of the conductor portion; and An air supply unit supplies air to the expandable sealing part; The pushing system expands the expandable seal by air from the air supply section, clamping the elastomer between the first part and the wall of the conductor part, and causing the front end of the second part to abut against the inner circumferential surface of the lower end of the side wall part.

[0140] [E25] As described in [E24], the substrate processing apparatus, wherein, The front end of the second part is formed by a contact strip.

[0141] [E26] As described in [E24] or [E25], in which, The elastic body is a helical coil spring.

[0142] [E27] The substrate processing apparatus as described in [E15] further includes: The conductor portion has a cylindrical shape and extends along the outer periphery of the substrate support, and is grounded. It is disposed above the bottom of the processing chamber in a manner that allows it to slide in the horizontal direction. The outer peripheral surface of the top of the conductor is a push-out surface; The inner circumferential surface at the lower end of the sidewall portion is a push-out surface corresponding to the outer circumferential surface at the top of the conductor portion; The outer peripheral surface of the top of the conductor portion is in direct or indirect contact with the inner peripheral surface of the lower end of the sidewall portion.

[0143] [E28] The substrate processing apparatus as described in [E27] further includes: A contact strip is provided on the outer peripheral surface of the top of the conductor portion.

[0144] [E29] The substrate processing apparatus as described in [E27] or [E28] further includes: A thrust bearing is disposed between the bottom of the processing chamber and the head of a bolt screwed into the bottom; The conductor section is slidably supported above the bottom of the processing chamber by a thrust bearing.

[0145] [E30] A method for repairing a substrate processing apparatus includes the following steps: The step of moving an inner wall component from outside the processing chamber of a substrate processing apparatus through an opening in the side wall of the processing chamber using a transfer arm; and The step of detachably fixing the inner wall component to the support component by moving one of the support component and the inner wall component in a vertical direction; The substrate processing apparatus includes: a processing chamber; a substrate support disposed within the processing chamber; and a support member disposed above the substrate support; the inner wall member includes a top that can be disposed above the substrate support and below the support member; The inner wall component is fixed to the support component by causing a contact member installed on one of the support component and the inner wall component to generate a horizontal spring reaction force on the other component.

[0146] [E31] A method for repairing a substrate processing apparatus includes the following steps: The step of moving the transport arm from outside the processing chamber of the substrate processing apparatus into the interior of the processing chamber through an opening provided in the side wall of the processing chamber; The step of transferring the inner wall component to the transport arm by moving it downwards using an actuator to release the fixation of the inner wall component by the contact member; and The step of moving the inner wall component from inside the processing chamber to outside the processing chamber through the opening; The substrate processing apparatus includes: a processing chamber; a substrate support disposed within the processing chamber; a support member disposed above the substrate support; an inner wall member including a top portion disposed above the substrate support and below the support member; and a contact member mounted on one of the support member and the inner wall member, wherein the inner wall member is detachably fixed to the support member by generating a horizontal spring reaction force on the other of the support member and the inner wall member.

[0147] As can be understood from the above description, the various embodiments of the present invention are set forth in this specification for illustrative purposes, and various modifications may be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit of the present invention are as indicated by the appended claims.

[0148] 1,1B~1H: Substrate processing apparatus 2a~2d: Taiwan 4a~4d: Containers 10: Processing Room 10g: Gate valve 10o: Opening 10p: Pathway 10s: sidewall 10u: Top 10V: Gate valve 11: Exhaust device 12: Substrate support 12e: Lower end 14: Supporting components 14b: Bottom surface 14d: Gas diffusion chamber 14f: Flow channel 14h: Gas pores 14r: concave part 161: Top 162: Bottom 16, 16B: Internal wall components 16c: Top 16e: Lower end 16f: membrane 16h: Gas pores 16i: Inner circumferential surface 16p:convex part 16r: concave part 16s: Side wall portion 16t: Top surface 18: Contact components 18r: concave part 20: Actuator 20d: Drive unit 20m: Drive shaft 20r: Rod 22: Base 22f: Flow channel 23: Quencher Unit 24: Static chuck 26: Insulation section 28: Conductor section 28b: Contact zone 28h: Hollow section 28o: Opening 28p: Guiding Section 28r: concave part 28s: Diameter Reduction Section 28t: outer peripheral surface 28u: Top 28w: wall 31: Radio Frequency Power Supply 31m, 32m: Matcher 32: Bias power supply 34: Lifting mechanism 36: Retractable bladder 37: Connecting components 38: Gas Supply Department 40: Quencher Unit 42: Heat transfer plate 44: Supporting Components 46: Cylindrical components 48: Enclosed component 50::base 54: Base 54p: Prominent part 54r: concave part 601E: Male connector 602E: Female connector 60C: Contact mechanism 60D: Contact Mechanism 60E: Contact mechanism 60F: Contact Mechanism 60G: Contact mechanism 61:Tubular body 61p:convex part 62: Pushing body 62h: Hole 62p:convex part 63: Drive Unit 64, 65: Contact components 66: Push pin 66s: Spring 67: Gas Supplier 68: Piezoelectric element 68a: Piezoelectric ceramic part 68b, 68c: Electrodes 68p: Power Supply 69: Conductive materials 71: Sealing part 72: Pushing body 73: Elastomers 74: Air Supply Department 76: Connecting components 77: Thrust bearing 78: Bolt 78n: Thrust nut 79: Washer 80: Sealing part 81: Air Supply Unit 181: Part One 182: Part Two 183: Spring 184: Floating Mechanism 185: Cover body 186: Spring 721: Part One 722: Part Two 723: Frontend AN: Aligner AX: Axis CA: Handling arm CTM: Transport Module ER: Edge ring LL1, LL2: Loading locking modules LM: Loading Module MC: Control Department PM1~PM6: Processing Module PS: Substrate processing system S: Processing space TC: Handling Room TM: Transport Module TU1, TU2: Handling devices W: substrate

Claims

1. A substrate processing apparatus, comprising: a processing chamber including a sidewall providing an opening; a substrate support disposed within the processing chamber; a support member disposed above the substrate support; an inner wall member including a top disposed above the substrate support and below the support member; a contact member mounted on one of the support member and the inner wall member, and wherein the inner wall member is detachably fixed to the support member by generating a horizontal spring reaction force on the other of the support member and the inner wall member; and an actuator for moving the inner wall member downward to release the fixation of the inner wall member to the support member.

2. The substrate processing apparatus as described in claim 1, wherein, The support member has a recess on its bottom surface and a recess on its top surface. The contact member includes: a first portion that is embedded in the recess of the support member; and a second portion that extends downward from the first portion and has a spring that generates the spring reaction force by being embedded in the recess of the top surface.

3. The substrate processing apparatus as described in claim 2, wherein, The contact member is detachable from the support member; the first part is elastic so that when the contact member is removed from the support member, it can be removed from the recess of the support member by deforming the first part in the horizontal direction.

4. The substrate processing apparatus as described in claim 3, wherein, The recess of the support member is narrower at the lower end opening of the recess of the support member.

5. The substrate processing apparatus as described in claim 1, wherein, The top surface of the top is provided with a protrusion; the contact member is fixed in a recess provided on the bottom surface of the support member and provides a recess that forms an opening downwards; the contact member includes a spring disposed in the recess of the contact member; the spring of the contact member generates the spring reaction force by embedding the protrusion of the top into the recess of the contact member.

6. The substrate processing apparatus as described in claim 5, wherein, The contact member further includes a floating mechanism that supports the spring.

7. The substrate processing apparatus as described in claim 5, wherein, The bottom surface of the support member has an internal thread; the outer peripheral surface of the contact member has an external thread that engages with the internal thread.

8. The substrate processing apparatus as described in claim 1, wherein, The bottom surface of the support member has a recess; the top surface of the top has a protrusion; the contact member is fixed to the top in such a way as to cover the protrusion, and has a spring that generates the spring reaction force by embedding the protrusion and the contact member into the recess of the support member.

9. The substrate processing apparatus as described in claim 1, wherein, The support member has a recess on its bottom surface and a protrusion on its top surface. The contact member is a helical spring washer that is disposed along the inner wall of the recess. The helical spring washer generates the spring reaction force by embedding the protrusion into the recess.

10. The substrate processing apparatus as described in any one of claims 1 to 9, wherein, The inner wall component can be moved between the inside and outside of the processing chamber via a transport arm through the opening.

11. The substrate processing apparatus as described in any one of claims 1 to 9 further comprises: a heat transfer sheet held between the support member and the top.

12. The substrate processing apparatus as described in any one of claims 1 to 9, wherein, The support structure and the top form a spray head to supply gas to the treatment chamber.

13. The substrate processing apparatus as described in any one of claims 1 to 9, wherein, The support structure has channels for the flow of the heating medium.

14. The substrate processing apparatus as described in any one of claims 1 to 9, wherein, The inner wall component further includes a side wall portion extending downward from the periphery of the top, and together with the substrate support, forms a processing space in which the substrate placed on the substrate support is processed.

15. The substrate processing apparatus as described in claim 14, wherein, The substrate processing device is a plasma processing device.

16. The substrate processing apparatus as claimed in claim 15 further comprises: a conductor portion, which is cylindrical and extends along the outer periphery of the substrate support and is grounded; and a contact mechanism that electrically connects the lower end of the sidewall portion to the conductor portion, thereby electrically connecting the inner wall member to the conductor portion.

17. The substrate processing apparatus as described in claim 16, wherein, The contact mechanism includes: a cylindrical body formed of a conductive material and electrically connected to the conductor portion, extending along the outer periphery of the conductor portion; a pressing body formed of a conductive material and disposed between the substrate support and the cylindrical body; and a driving unit that causes the cylindrical body to rotate circumferentially; the contact mechanism causes the pressing body to press against the outer peripheral surface of the lower end of the sidewall portion by means of the circumferential rotation of the cylindrical body, thereby electrically connecting the inner wall member to the conductor portion via the pressing body and the cylindrical body.

18. The substrate processing apparatus as described in claim 16, wherein, The upper end of the conductor portion is provided with a recess extending in the circumferential direction; the contact mechanism includes another contact member that is elastic; the other contact member extends in the circumferential direction in the recess of the conductor portion and is electrically connected to the conductor portion; the other contact member makes elastic contact with the lower end of the side wall portion in the recess, thereby making the inner wall member electrically connected to the conductor portion via the other contact member.

19. The substrate processing apparatus as described in claim 16, wherein, The contact mechanism includes: a plurality of male connectors, one of which is mounted on the lower end of the side wall portion and the upper end of the conductor portion; and a plurality of female connectors, the other of which is mounted on the lower end of the side wall portion and the upper end of the conductor portion; the contact mechanism electrically connects the inner wall member to the conductor portion by engaging each of the plurality of male connectors with the corresponding female connector of the plurality of female connectors.

20. The substrate processing apparatus as described in claim 16, wherein, The contact mechanism includes another contact member configured to abut against the bottom surface provided at the lower end of the sidewall portion; the contact mechanism enables the inner wall member to be electrically connected to the conductor portion via the other contact member by pressing the other contact member against the bottom surface of the sidewall portion.

21. The substrate processing apparatus as described in claim 20, wherein, The contact mechanism uses fluid pressure to press the other contact member against the bottom surface of the sidewall.

22. The substrate processing apparatus as described in claim 20, wherein, The contact mechanism further includes a piezoelectric element that causes the other contact member to press against the bottom surface of the sidewall portion.

23. The substrate processing apparatus as described in any one of claims 1 to 9, wherein, This support component forms the top electrode of a capacitively coupled plasma processing device.

24. The substrate processing apparatus as described in claim 16, wherein, The conductor portion is provided therein with: A hollow portion extending circumferentially relative to the central axis of the conductor portion; and an opening extending between the hollow portion and the space outside the conductor portion; the contact mechanism includes: an expandable sealing portion disposed in the hollow portion; a pressing body formed of a conductive material and including: a first portion disposed in the hollow portion between the expandable sealing portion and the wall of the conductor portion defining the opening; and a second portion extending from the first portion into the opening; an elastomer formed of a conductive material and disposed between the first portion and the wall of the conductor portion; and an air supply portion supplying air to the expandable sealing portion; the pressing system expands the expandable sealing portion by means of the air from the air supply portion, clamping the elastomer between the first portion and the wall of the conductor portion, and causing the front end of the second portion to abut against the inner circumferential surface of the lower end of the side wall portion.

25. The substrate processing apparatus as described in claim 24, wherein, The front end of the second part is formed by a contact strip.

26. The substrate processing apparatus as described in claim 24, wherein, The elastic body is a helical coil spring.

27. The substrate processing apparatus as claimed in claim 15 further comprises: a conductor portion, which is cylindrical and extends along the outer periphery of the substrate support and is grounded, and is disposed above the bottom of the processing chamber in a manner that allows it to slide in the horizontal direction; the outer peripheral surface of the top of the conductor portion is a push-pull surface; the inner peripheral surface of the lower end of the sidewall portion is a push-pull surface corresponding to the outer peripheral surface of the top of the conductor portion; the outer peripheral surface of the top of the conductor portion and the inner peripheral surface of the lower end of the sidewall portion are in direct or indirect contact.

28. The substrate processing apparatus as claimed in claim 27 further includes: a contact strip disposed on the outer peripheral surface of the top of the conductor portion.

29. The substrate processing apparatus as claimed in claim 27 further comprises: a thrust bearing disposed between the bottom of the processing chamber and the head of a bolt screwed into the bottom; the conductor portion being slidably supported above the bottom of the processing chamber by means of the thrust bearing.

30. A method for maintaining a substrate processing apparatus, comprising the following steps: moving an inner wall component from outside the processing chamber of the substrate processing apparatus through an opening in the side wall of the processing chamber into the interior of the processing chamber by means of a transport arm; and fixing the inner wall component to the support component in a detachable manner by moving one of the support component and the inner wall component in a vertical direction; the substrate processing apparatus comprising: the processing chamber; a substrate support disposed in the processing chamber; and the support component disposed above the substrate support; the inner wall component comprising a top disposed above the substrate support and below the support component; fixing the inner wall component to the support component by causing a contact member mounted on one of the support component and the inner wall component to generate a horizontal spring reaction force on the other component of the support component and the inner wall component.

31. A method for maintaining a substrate processing apparatus, comprising the following steps: moving a transfer arm from outside the processing chamber of the substrate processing apparatus into the interior of the processing chamber through an opening in the side wall of the processing chamber; transferring the inner wall member to the transfer arm by moving an inner wall member downwards using an actuator to release the fixation of the inner wall member by a contact member; and moving the inner wall member from inside the processing chamber through the opening to outside the processing chamber; the substrate processing apparatus comprising: the processing chamber; a substrate support disposed within the processing chamber; a support member disposed above the substrate support; the inner wall member including a top disposed above the substrate support and below the support member; and a contact member mounted on one of the support member and the inner wall member, wherein the inner wall member is detachably fixed to the support member by generating a horizontal spring reaction force on the other member.

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