Method for manufacturing a mask, and method for manufacturing a mask and a mask device.

Abstract

The mask of the present invention may include a first portion comprising at least one first through-hole group and a second portion comprising at least one second through-hole group adjacent to the first through-hole group in a first direction. A method for manufacturing the mask of the present invention may include: a step of preparing a laminate having a raw substrate and a resist layer; a first exposure process of exposing the resist layer corresponding to the first portion using a first exposure mask; a second exposure process of exposing the resist layer corresponding to the second portion using a second exposure mask; a process of developing the resist layer corresponding to the first portion and the resist layer corresponding to the second portion; and a process of etching the raw substrate with the resist layer corresponding to the first portion and the resist layer corresponding to the second portion in between.

Description

Method for manufacturing mask, method for manufacturing mask and mask device The present invention relates to a method for manufacturing a mask, and a method for manufacturing a mask and a mask device. Organic devices, such as organic EL (electroluminescence) display devices, have attracted much attention. As a method for forming elements of organic devices, a method of attaching the material constituting the element to a substrate by vapor deposition is known. For example, firstly, a substrate with a first electrode formed in a pattern corresponding to the element is prepared. Then, organic material is attached to the first electrode through through-holes in a mask, forming an organic layer on the first electrode. Finally, a second electrode is formed on the organic layer. As a method for manufacturing a mask, a method of etching a substrate such as a metal plate to form a through-hole is known. This method includes the following steps: exposing a resist layer on the substrate using an exposure mask; and etching the substrate through the exposed and developed resist layer. [Prior Art] [Patent] [Patent Document 1] Japanese Patent No. 3539597 [Problems to be solved by the invention] One approach to reducing organic device manufacturing costs is to increase the size of substrates. Larger substrates also increase the size of masks and the equipment used to manufacture them. For example, manufacturing masks for 8th-generation substrates requires exposure masks that support 8th-generation substrates. However, increasing the size of exposure masks requires substantial investment. The present invention provides a method for manufacturing a mask that effectively solves the above-mentioned problems. [Technical Means for Solving the Problem] According to one embodiment of the present invention, in the method of manufacturing a mask, the mask may include a first portion comprising at least one first group of through holes, and a second portion comprising at least one second group of through holes adjacent to the first group of through holes in a first direction. The manufacturing method may include: a step of preparing a laminate having a raw substrate and a resist layer; a first exposure process of exposing the resist layer corresponding to the first portion using a first exposure mask; a second exposure process of exposing the resist layer corresponding to the second portion using a second exposure mask; a process of developing the resist layer corresponding to the first portion and the resist layer corresponding to the second portion; and a process of etching the raw substrate with respect to the resist layer corresponding to the first portion and the resist layer corresponding to the second portion. The first exposure mask may include a first-side exposure mask for exposing the resist layer on the first surface of the original substrate, and a second-side first exposure mask for exposing the resist layer on the second surface of the original substrate. In the first exposure process, the resist layer on the first surface is exposed using the first-side first exposure mask, and the resist layer on the second surface is exposed using the second-side first exposure mask. The second exposure mask may include a first-side second exposure mask for exposing the resist layer on the first surface, and a second-side second exposure mask for exposing the resist layer on the second surface. In the second exposure process, the resist layer on the first surface is exposed using the first-side second exposure mask, and the resist layer on the second surface is exposed using the second-side second exposure mask. The outer edge of the first portion and the first group of through holes can be formed on the original substrate by etching through the resist layer corresponding to the first portion. The outer edge of the second portion and the second group of through holes can be formed on the original substrate by etching through the resist layer corresponding to the second portion. [Effects of the Invention] According to one embodiment of the present invention, the investment required for large-scale masking can be reduced. In this specification and these drawings, unless otherwise specified, terms such as "substrate," "base material," "plate," "sheet," and "film," which refer to substances that form the basis of a certain structure, should not be distinguished from each other solely based on the difference in terminology. In this specification and these drawings, unless otherwise specified, terms such as shape, geometric conditions, terms specifying the degree of equality (e.g., "parallel," "orthogonal," etc.), length, and angle values ​​should be understood to include a range sufficient to expect the same function, without adhering to their strict meaning. In this specification and the drawings, unless otherwise specified, when a component of a certain member or region is referred to as being "on," "below," "upper," "lower," or "above," or "below" another component or region, this includes situations where the component is directly connected to the other component. Furthermore, this also includes situations where another component is located between the component and the other component, i.e., situations where the component is indirectly connected. Furthermore, unless otherwise specified, for phrases containing "on," "upper," "above," or "lower," "lower," or "below," the up-down direction may be reversed. In this specification and these drawings, unless otherwise specified, the same or similar symbols are used to mark the same parts or parts with the same function, and corresponding repetitive descriptions are sometimes omitted. Furthermore, the dimensions in the drawings may sometimes differ from the actual scale for illustrative purposes, and some components may sometimes be omitted from the drawings. In this specification and these drawings, unless otherwise specified, one embodiment of this specification may be combined with other embodiments within a non-contradictory scope. Furthermore, other embodiments may also be combined with each other within a non-contradictory scope. In this specification and these drawings, unless otherwise specified, when two or more steps or procedures are disclosed in relation to manufacturing methods or other methods, other undisclosed steps or procedures may be performed between the disclosed steps or procedures. Furthermore, the order of the disclosed steps or procedures may be arbitrarily set within the scope of non-contradiction. In this specification and these drawings, unless otherwise specified, the numerical range indicated by the symbol "~" includes the numerical values ​​appearing before and after the symbol "~". For example, the numerical range defined by expressing "34 to 38% by mass" is the same as the numerical range defined by expressing "more than 34% by mass and less than 38% by mass". In one embodiment of this specification, an example is described in which a mask is used to form an organic material or electrode on a substrate when manufacturing an organic EL display device. However, the purpose of the mask is not particularly determined, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment can be used to form electrodes for a device that displays or projects images or images of a virtual reality mirror, so-called VR (Virtual Reality), or an augmented reality mirror, so-called AR (Augmented Reality). In addition, the mask of this embodiment can also be used to form electrodes of display devices other than organic EL display devices, such as electrodes of liquid crystal display devices. In addition, the mask of this embodiment can also be used to form electrodes of organic devices other than display devices, such as electrodes of pressure sensors. A first aspect of the present invention is a method for manufacturing a mask, wherein the mask includes a first portion including at least one first through-hole group and a second portion including at least one second through-hole group adjacent to the first through-hole group in a first direction, and the manufacturing method includes: preparing a laminate having an original substrate and a resist layer; a first exposure process of exposing the resist layer corresponding to the first portion using a first exposure mask; a second exposure process of exposing the resist layer corresponding to the second portion using a second exposure mask; a process of developing the resist layer corresponding to the first portion and the resist layer corresponding to the second portion; and a process of etching the original substrate through the resist layer corresponding to the first portion and the resist layer corresponding to the second portion. The first exposure mask includes a first-side first exposure mask for exposing the resist layer on the first side of the original substrate, and a second-side first exposure mask for exposing the resist layer on the second side of the original substrate. In the first exposure process, the resist layer on the first side is exposed by the first-side first exposure mask, and the resist layer on the second side is exposed by the second-side first exposure mask. The second exposure mask includes a first-side second exposure mask for exposing the resist layer on the first side, and a second-side second exposure mask for exposing the resist layer on the second side. In the second exposure process, the resist layer on the first side is exposed by the first-side second exposure mask, and the resist layer on the second side is exposed by the second-side second exposure mask. Etching performed with the resist layer corresponding to the first part above forms the outer edge of the first part and the first through-hole group on the original substrate. Etching performed with the resist layer corresponding to the second part above forms the outer edge of the second part and the second through-hole group on the original substrate. The second embodiment of the present invention is manufactured by the method of the mask described in the first embodiment, wherein the first exposure mask may be a rectangle including a first side and a second side. The first side may be 1090 mm or more. The second side may be 810 mm or more. In a third aspect of the present invention, the method for manufacturing a mask according to the first or second aspect is described above, wherein the thickness of the original substrate may be greater than 30 μm. The fourth state of the present invention is a method for manufacturing a mask of any of the first to third states described above, wherein the second exposure process may include a process of adjusting the position of the second exposure mask based on the resist layer corresponding to the first part after the first exposure process is performed. The fifth aspect of the present invention is a method for manufacturing a mask of any of the first to fourth aspects described above, wherein the second exposure process may include a process of adjusting the position of the second exposure mask based on the position of the first exposure mask used in the first exposure process. The sixth state of the present invention is a method for manufacturing a mask of any of the first to fifth states described above, wherein the first exposure process may include a process for adjusting the relative position between the first exposure mask on the first surface and the first exposure mask on the second surface, and the second exposure process may include a process for adjusting the relative position between the second exposure mask on the first surface and the second exposure mask on the second surface. The seventh aspect of the present invention is a mask comprising: a substrate comprising a first side edge and a second side edge extending along a first direction, and comprising a first surface and a second surface; and a plurality of through-hole groups, which penetrate the above-mentioned substrate; and in a top view, the above-mentioned mask comprises a first portion comprising at least one of the first through-hole groups, and a second portion comprising at least one of the second through-hole groups adjacent to the above-mentioned first through-hole group in the first direction, a first angle θ1 formed by the first arrangement direction of the above-mentioned first through-hole group and the second arrangement direction of the above-mentioned second through-hole group is greater than 0.00042°, the above-mentioned first arrangement direction is the arrangement direction of the through-holes belonging to the above-mentioned first through-hole group and arranged along the above-mentioned first side edge, and the above-mentioned second arrangement direction is the arrangement direction of the through-holes belonging to the above-mentioned second through-hole group and arranged along the above-mentioned first side edge. The eighth embodiment of the present invention is a mask as described in the seventh embodiment, wherein, in top view, the mask has a central portion that can be included in a plurality of the through-hole groups arranged in the first direction. The size of the central portion in the first direction can be more than 1000 mm and less than 2200 mm. The ninth state of the present invention is a mask as described in the seventh or eighth state, wherein the first side edge may include a first step portion, which is located at the junction of the first part and the second part and is displaced in a second direction orthogonal to the first direction. The 10th state of the present invention is the same as the mask of the 9th state described above, wherein the size S1 of the first step portion can be 3.0 μm or less. An eleventh aspect of the present invention is the mask of any one of the seventh to tenth aspects, wherein the first angle θ1 may be less than or equal to 0.00125°. The 12th state of the present invention is the same as the masking of the 9th state described above, wherein the following relationship holds between the dimension S1 of the first step and the first angle θ1: 4820[μm / °]×θ1[°]+S1[μm]≦6.0[μm] A 13th aspect of the present invention is the mask of any one of the 7th to 12th aspects, wherein the size of the first portion in the first direction may be greater than 900 mm, and the size of the second portion in the first direction may be greater than 900 mm. The 14th aspect of the present invention is a mask as described in any one of the above-mentioned 7th to 13th aspects, wherein the above-mentioned first part may include a first end, and the first end constitutes the end of the above-mentioned mask in the above-mentioned first direction; the above-mentioned second part may include a second end, and the second end constitutes the end of the above-mentioned mask in the above-mentioned first direction. The 15th aspect of the present invention is the same as the masking of the 14th aspect described above, wherein, in a top view, the first end and the second end may be respectively included in two or more recesses arranged in a second direction orthogonal to the first direction. The 16th aspect of the present invention is the same as the mask of the 15th aspect described above, wherein the recess may have a size of 5 mm or more in the first direction. The 17th embodiment of the present invention is a method for manufacturing a masking device, comprising: an alignment step in which tension is applied to a mask as described in any of the 7th to 16th embodiments to determine the position of the mask relative to a frame; and a fixing step in which the mask is fixed to the frame; wherein the first part comprises: a first inner reference hole, which is formed by a through hole of the first through hole group adjacent to the second through hole group in the first direction; and a first outer reference hole, which is formed by a through hole of the first through hole group that is furthest from the second through hole group in the first direction; the second part comprises a second outer reference hole, which is formed by a through hole of the second through hole group that is furthest from the first through hole group in the first direction; the alignment step comprises: an adjustment process for adjusting the tension based on the first outer reference hole and the second outer reference hole; and a shifting process for moving the mask in a second direction orthogonal to the first direction based on the first inner reference hole after the adjustment process. The 18th aspect of the present invention is a method for manufacturing a mask device such as the 17th aspect, wherein the adjustment process can adjust the tension so that the deviation distance of the first outer reference hole and the deviation distance of the second outer reference hole in the second direction both become the first adjustment threshold. The 19th aspect of the present invention is a method for manufacturing a mask device such as the 17th aspect or the 18th aspect, wherein the shifting process can move the mask in the second direction so that the deviation distance of the first outer reference hole, the deviation distance of the first inner reference hole and the deviation distance of the second outer reference hole in the second direction are all below the second adjustment threshold. The 20th aspect of the present invention is the same as the manufacturing method of the masking device in the 19th aspect described above, wherein the shifting process can move the mask in the second direction so that the difference between the deviation distance of the first outer reference hole and the deviation distance of the first inner reference hole becomes a third adjustment threshold or less. A 21st aspect of the present invention is the method for manufacturing a mask device according to any one of the 17th to 20th aspects, wherein a size of the frame in the second direction may be greater than 1200 mm. With reference to the accompanying drawings, one embodiment of the present invention will be described in detail. Furthermore, the embodiments shown below are examples of embodiments of the present invention and should not be construed as limiting the present invention to these embodiments. An organic device 100 including elements formed by using a mask will be described. FIG1 is a cross-sectional view showing an example of the organic device 100. Organic device 100 includes a substrate 110 having a first surface 111 and a second surface 112, and a plurality of elements 115 located on first surface 111 of substrate 110. Elements 115 are, for example, pixels. Elements 115 may also be arranged along the in-plane direction of first surface 111. Substrate 110 may include two or more types of elements 115. For example, substrate 110 may include a first element 115A and a second element 115B. Although not shown, substrate 110 may also include a third element. First element 115A, second element 115B, and third element may be, for example, a red pixel, a blue pixel, and a green pixel. Component 115 may also include a first electrode 120, an organic layer 130 on the first electrode 120, and a second electrode 140 on the organic layer 130. The element formed by using a mask may be either the organic layer 130 or the second electrode 140. The element formed by using a mask is also referred to as a vapor-deposited layer. The organic device 100 may also include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 may include polyimide, for example. The insulating layer 160 may also overlap with an end of the first electrode 120 in a plan view. Organic device 100 can also be an active matrix type. For example, although not shown, organic device 100 may also have switches electrically connected to a plurality of elements 115 respectively. The switches are, for example, transistors. The switches can control the flow / blocking of voltage or current supplied to the corresponding elements 115. The substrate 110 may also be a plate-shaped component with insulating properties. Preferably, the substrate 110 is transparent, allowing light to pass through. Materials for the substrate 110 may include rigid materials lacking flexibility, such as quartz glass, Pyrex glass, or synthetic quartz sheets, or flexible materials with flexibility, such as resin films, optical resin sheets, or thin glass. Furthermore, the substrate may also be a laminate with barrier layers on one or both sides of the resin film. Component 115 is configured to perform certain functions by applying a voltage between the first electrode 120 and the second electrode 140, or by passing a current between the first electrode 120 and the second electrode 140. For example, when component 115 is a pixel of an organic EL display device, component 115 can emit light that constitutes an image. The first electrode 120 comprises a conductive material. For example, the first electrode 120 comprises a metal, a conductive metal oxide, or other conductive inorganic materials. The first electrode 120 may also comprise transparent and conductive metal oxides such as indium tin oxide (ITO) and indium zinc oxide (IZO). Organic layer 130 contains organic materials. When an electric current is applied to organic layer 130, it can perform certain functions. Applying an electric current means either applying a voltage or passing a current through organic layer 130. Organic layer 130 can be a light-emitting layer that emits light when an electric current is applied. Organic layer 130 may also contain organic semiconductor materials. The transmittance, refractive index, and other properties of organic layer 130 can also be appropriately adjusted. As shown in Figure 1, organic layer 130 may also include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, organic layer 130 may also include a third organic layer, which is included in the third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. If a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is activated. When the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and extracted to the outside from either the second electrode 140 side or the first electrode 120 side. The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like. The second electrode 140 comprises a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by a masking vapor deposition method. Materials constituting the second electrode 140 may include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), carbon, etc. These materials may be used individually or in combination. When using two or more materials, a laminate composed of each material may also be used. Furthermore, alloys containing two or more materials may also be used. For example, magnesium alloys such as MgAg, and aluminum alloys such as AlLi, AlCa, and AlMg may be used. MgAg is also referred to as magnesium silver. Magnesium silver is preferred as a material for the second electrode 140. Alkali metal and alkaline earth metal alloys may also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, etc., may also be used. The second electrode 140 can also be a common electrode. For example, the second electrode 140 of one element 115 can also be electrically connected to the second electrode 140 of another element 115. The second electrode 140 may be composed of a single layer. For example, the second electrode 140 may be a layer formed by a vapor deposition process using a mask. Alternatively, as shown in Figure 1, the second electrode 140 may also include a first layer 140A and a second layer 140B. The first layer 140A may be a layer formed by a vapor deposition process using a first mask. The second layer 140B may be a layer formed by a vapor deposition process using a second mask. Thus, the second electrode 140 can be formed using two or more masks. This increases the freedom of patterning of the second electrode 140 in plan view. For example, the organic device 100 may include areas where the second electrode 140 is not present in plan view. Areas where the second electrode 140 is not present may have higher transmittance than areas where the second electrode 140 is present. As shown in Figure 1, the ends of the first layer 140A and the second layer 140B can also partially overlap. In this way, the first layer 140A and the second layer 140B can be electrically connected. Although not illustrated, the second electrode 140 may also include a third layer or other layers. The third layer or other layers may also be electrically connected to the first layer 140A and the second layer 140B. In the following description, when explaining the common structure of the second electrode 140 among the first layer 140A, the second layer 140B, the third layer, etc., the term "second electrode 140" and its symbol will be used. The method for manufacturing the organic device 100 can also produce an organic device group 102 as shown in Figure 2. The organic device group 102 includes two or more organic devices 100. For example, the organic device group 102 may include organic devices 100 arranged in a first direction D1 and a second direction D2. The second direction D2 is perpendicular to the first direction D1. The two or more organic devices 100 may also have a common substrate 110. For example, the organic device group 102 may include layers such as a first electrode 120, an organic layer 130, and a second electrode 140, which are located on a single substrate 110 and constitute the two or more organic devices 100. The organic devices 100 can be obtained by dividing the organic device group 102. The first direction D1 , as described below, may also be a direction in which the mask 50 used to manufacture the organic device 100 extends. The dimension A1 of the organic device 100 in the first direction D1 may be, for example, greater than 10 mm, greater than 30 mm, or greater than 100 mm. The dimension A1 may be, for example, less than 200 mm, less than 500 mm, or less than 1000 mm. The range of the dimension A1 may be determined by the first group including 10 mm, 30 mm, and 100 mm, and / or the second group including 200 mm, 500 mm, and 1000 mm. The range of the dimension A1 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension A1 may also be determined by a combination of any two of the values ​​included in the first group. The range of the dimension A1 may also be determined by a combination of any two of the values ​​included in the second group. For example, the size A1 may be greater than 10 mm and less than 1000 mm, greater than 10 mm and less than 500 mm, greater than 10 mm and less than 200 mm, greater than 10 mm and less than 100 mm, greater than 10 mm and less than 30 mm, greater than 30 mm and less than 1000 mm, greater than 30 mm and less than 500 mm, greater than 30 mm and less than 200 mm, greater than 30 mm and less than 100 mm, greater than 100 mm and less than 1000 mm, greater than 100 mm and less than 500 mm, greater than 100 mm and less than 200 mm, greater than 200 mm and less than 1000 mm, greater than 200 mm and less than 500 mm, or greater than 500 mm and less than 1000 mm. The dimension A2 of the organic device 100 in the second direction D2 may be, for example, greater than 10 mm, greater than 20 mm, or greater than 50 mm. The dimension A2 may be, for example, less than 100 mm, less than 200 mm, or less than 500 mm. The range of the dimension A2 may be determined by the first group including 10 mm, 20 mm, and 50 mm, and / or the second group including 100 mm, 200 mm, and 500 mm. The range of the dimension A2 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension A2 may also be determined by a combination of any two of the values ​​included in the first group. The range of the dimension A2 may also be determined by a combination of any two of the values ​​included in the second group. For example, size A2 may be greater than 10 mm and less than 500 mm, greater than 10 mm and less than 200 mm, greater than 10 mm and less than 100 mm, greater than 10 mm and less than 50 mm, greater than 10 mm and less than 20 mm, greater than 20 mm and less than 500 mm, greater than 20 mm and less than 200 mm, greater than 20 mm and less than 100 mm, greater than 20 mm and less than 50 mm, greater than 50 mm and less than 500 mm, greater than 50 mm and less than 200 mm, greater than 50 mm and less than 100 mm, greater than 100 mm and less than 500 mm, greater than 100 mm and less than 200 mm, or greater than 200 mm and less than 500 mm. The organic device group 102 includes a device region 103 where a plurality of organic devices 100 are arranged. The device region 103 has a size G12 in the first direction D1 and a size G22 in the second direction D2. By increasing the size of the substrate 110, the dimensions G12 and G22 of the device region 103 can be increased. This increases the number of organic devices 100 formed on a single substrate 110, thereby reducing the manufacturing cost of the organic devices 100. The dimension G11 of the substrate 110 in the first direction D1 may be, for example, greater than 1000 mm, greater than 1200 mm, greater than 1300 mm, or greater than 2100 mm. The dimension G11 may be, for example, less than 1200 mm, less than 1300 mm, less than 1900 mm, less than 2100 mm, or less than 2300 mm. The range of the dimension G11 may be determined by the first group including 1000 mm, 1200 mm, 1300 mm, and 2100 mm, and / or the second group including 1200 mm, 1300 mm, 1900 mm, 2100 mm, and 2300 mm. The range of the dimension G11 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension G11 can also be determined by any combination of two of the values ​​included in the first group above. The range of dimension G11 can also be determined by any combination of two of the values ​​included in the second group above. For example, the dimension G11 may be greater than or equal to 1000 mm and less than or equal to 2300 mm, greater than or equal to 1000 mm and less than or equal to 2100 mm, greater than or equal to 1000 mm and less than or equal to 1900 mm, greater than or equal to 1000 mm and less than or equal to 1300 mm, greater than or equal to 1000 mm and less than or equal to 1200 mm, greater than or equal to 1200 mm and less than or equal to 2300 mm, greater than or equal to 1200 mm and less than or equal to 2100 mm, greater than or equal to 1200 mm and less than or equal to 1300 mm, greater than or equal to 1300 mm and less than or equal to 2300 mm, greater than or equal to 1300 mm and less than or equal to 2100 mm, greater than or equal to 1300 mm and less than or equal to 1900 mm, greater than or equal to 1900 mm and less than or equal to 2300 mm, greater than or equal to 1900 mm and less than or equal to 2100 mm, or greater than or equal to 2300 mm. The dimension G21 of the substrate 110 in the second direction D2 may be, for example, greater than 1200 mm, greater than 1300 mm, greater than 1500 mm, greater than 2000 mm, or greater than 2400 mm. The dimension G21 may be, for example, less than 1300 mm, less than 2300 mm, less than 2400 mm, or less than 2600 mm. The range of the dimension G21 may be determined by the first group including 1200 mm, 1300 mm, 1500 mm, 2000 mm, and 2400 mm, and / or the second group including 1300 mm, 2300 mm, 2400 mm, and 2600 mm. The range of the dimension G21 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension G21 can also be determined by any combination of two of the values ​​included in the first group above. The range of dimension G21 can also be determined by any combination of two of the values ​​included in the second group above. For example, the dimension G21 may be 1200 mm or more and 2600 mm or less, 1200 mm or more and 2400 mm or less, 1200 mm or more and 2300 mm or less, 1200 mm or more and 1500 mm or less, 1200 mm or more and 1300 mm or less, 1300 mm or more and 2600 mm or less, 1300 mm or more and 2400 mm or less, 1300 mm or more and 1500 mm or more, 1500 mm or more and 2600 mm or less, 1500 mm or more and 2400 mm or less, 1500 mm or more and 2300 mm or less, 2000 mm or more and 2300 mm or less, 2300 mm or more and 2600 mm or less, 2300 mm or more and 2400 mm or less. It can be less than 2 mm, or more than 2400 mm and less than 2600 mm. Specific numerical ranges for dimension G11 and dimension G21 can also be combined. For example, dimension G11 can be 1000 mm to 1200 mm, and dimension G21 can be 1200 mm to 1300 mm. For example, dimension G11 can also be 1200 mm to 1300 mm, and dimension G21 can be 2000 mm to 2300 mm. For example, dimension G11 can also be 2100 mm to 2300 mm, and dimension G21 can be 2400 mm to 2600 mm. Next, a method of forming the organic layer 130, the second electrode 140, and other elements by vapor deposition will be described. Fig. 3 shows a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process to deposit a vapor deposition material on the substrate 110. As shown in Figure 3, the evaporation apparatus 10 may include a evaporation source 6, a heater 8, and a mask device 15. Furthermore, the evaporation apparatus 10 may further include an exhaust mechanism for creating a vacuum environment within the evaporation apparatus 10. The evaporation source 6, for example, is a crucible that contains a evaporation material 7, such as an organic material or a metal material. The heater 8 heats the evaporation source 6, evaporating the evaporation material 7 under a vacuum environment. The mask device 15 is positioned opposite the crucible 6. As shown in FIG3 , the mask device 15 includes at least one mask 50. The mask device 15 may also include a mask support 40 that supports the mask 50. The mask support 40 may also include a frame 41 having an opening 43. The mask 50 may also be fixed to the frame 41 so as to extend across the opening 43 when viewed from above. The frame 41 may also support the mask 50 in a stretched state in the direction of its surface to prevent the mask 50 from bending. As shown in FIG3 , the mask device 15 is disposed within the vapor deposition apparatus 10 such that the mask 50 faces the first surface 111 of the substrate 110. The mask 50 includes a plurality of through-holes 56 through which the vapor deposition material 7 flying from the vapor deposition source 6 passes. In the following description, the surface of the mask 50 facing the substrate 110 is referred to as the first surface 551. The surface of the mask 50 opposite the first surface 551 is referred to as the second surface 552. As shown in FIG3 , the evaporation apparatus 10 may also include a substrate holder 2 for holding the substrate 110. The substrate holder 2 may be movable in the thickness direction of the substrate 110. The substrate holder 2 may also be movable in the surface direction of the substrate 110. The substrate holder 2 may also be configured to control the tilt of the substrate 110. For example, the substrate holder 2 may include a plurality of suction cups attached to the outer edge of the substrate 110. Each suction cup may be independently movable in the thickness direction or the surface direction of the substrate 110. The position of the mask 50 relative to the substrate 110 can be adjusted by moving at least one of the substrate holder 2 or the mask holder 3. As shown in FIG3 , the vapor deposition apparatus 10 may also include a cooling plate 4 disposed on the second surface 112 side of the substrate 110. The cooling plate 4 may also have a flow path for circulating a coolant inside the cooling plate 4. The cooling plate 4 can suppress the temperature rise of the substrate 110 during the vapor deposition process. As shown in FIG3 , the evaporation device 10 may also include a magnet 5 disposed on the second surface 112 side of the substrate 110. The magnet 5 may also be disposed on the surface of the cooling plate 4 away from the substrate 110. The magnet 5 can pull the mask 50 toward the substrate 110 by magnetic force. This can reduce the gap between the mask 50 and the substrate 110 or eliminate the gap. This can suppress the generation of shadows during the evaporation process. The so-called shadow refers to the phenomenon that the shape of the evaporation layer becomes uneven due to the evaporation material 7 entering the gap between the mask 50 and the substrate 110. The shape of the evaporation layer refers to the thickness of the evaporation layer, the size of the evaporation layer when viewed from above, etc. An electrostatic suction cup using electrostatic force can also be used to pull the mask 50 toward the substrate 110. FIG4 is a top view of the mask device 15 as viewed from the first surface 551. The mask device 15 may include a mask support 40 including a frame 41, and a mask 50 fixed to the frame 41. The mask device 15 may include two or more masks 50 arranged in the second direction D2. The frame 41 supports the mask 50 while applying tension to the mask 50 to prevent deflection. The frame 41 may include a pair of first sides 411 extending along the first direction D1, a pair of second sides 412 extending along the second direction D2, and an opening 43. The second side 412 may be longer than the first side 411. The opening 43 is located between the pair of first sides 411 and the pair of second sides 412. The mask 50 may include a first side edge 501 and a second side edge 502 extending along the first direction D1, a first end 503 and a second end 504. The first end 503 and the second end 504 are the ends of the mask 50 in the first direction D1. In a top view, the mask 50 includes a first end portion 51a, a second end portion 51b, and a middle portion 52. The first end portion 51a and the second end portion 51b face each other in the first direction D1. The middle portion 52 is located between the first end portion 51a and the second end portion 51b. The middle portion 52 includes a plurality of through-hole groups 53 arranged in the first direction D1. The first end portion 51a has a width W01. Width W01 is the dimension of the first end portion 51a in the second direction D2. Width W01 is measured at the boundary between the first end portion 51a and the middle portion 52. The second end portion 51b has a width W02. Width W02 is the dimension of the second end portion 51b in the second direction D2. Width W02 is measured at the boundary between the second end portion 51b and the middle portion 52. The width W01 of the first end portion 51 a may be the same as the width W02 of the second end portion 51 b , may be larger than the width W02 , or may be smaller than the width W02 . The term "view from above" refers to observing the object along the thickness of the mask 50. The mask 50 is fixed to the second side 412. Specifically, the first end 51a is fixed to one second side 412, and the second end 51b is fixed to the other second side 412. The first end 51a and the second end 51b can also be fixed to the second side 412 by welding. The middle portion 52 overlaps with the opening 43 of the frame 41 in a plan view. The frame 41 has a dimension M17 in the second direction D2. The numerical range of dimension M17 can be adopted from the numerical range of dimension G21 of the substrate 110 described above. The opening 43 of the frame 41 has a dimension M18 in the second direction D2. By increasing the dimension M17 of the frame 41, the dimension M18 of the opening 43 can be increased. This can increase the dimension G22 of the device region 103 of the organic device group 102. Consequently, the manufacturing cost of the organic device 100 can be reduced. FIG5 is a top view of an example of a mask 50. The through-hole group 53 of the middle portion 52 includes a plurality of through-holes 56 regularly arranged in a top view. The through-holes 56 may also be periodically arranged in two directions. For example, the through-holes 56 may also be periodically arranged in the first direction D1 and the second direction D2. One through-hole group 53 corresponds to one organic device 100. For example, the plurality of first organic layers 130A included in one organic device 100 are formed of a vapor-deposited material passing through the plurality of through-holes 56 of one through-hole group 53. The mask 50 includes at least one through-hole group 53. The mask 50 may also include two or more through-hole groups 53 arranged in the first direction D1. The shield 50 has a dimension M11 in the first direction D1. The intermediate portion 52 has a dimension M12 in the first direction D1. The boundary between the intermediate portion 52 and the first end portion 51a is determined based on the group of through holes 53 closest to the first end portion 503. As shown in FIG5, the boundary line BL1, representing the boundary, extends along the second direction D2 in a manner that connects to the plurality of through holes 56 closest to the first end portion 503. Similarly, the boundary between the intermediate portion 52 and the second end portion 51b is determined based on the group of through holes 53 closest to the second end portion 504. As shown in FIG5, the boundary line BL2, representing the boundary, extends along the second direction D2 in a manner that connects to the plurality of through holes 56 closest to the second end portion 504. Figure 6 is a top view showing an example of the first end portion 51a of the mask 50. As shown in Figure 6, the first end portion 503 may also include two or more recesses 505 arranged in the second direction D2. The recesses 505 are recessed inward in the first direction D1. "Inward" means the side near the center of the mask 50. "Inward in the first direction D1" means the side near the center of the mask 50 in the first direction D1. The recesses 505 may also be recessed inward in the first direction D1 relative to the corner portion 507. The corner portion 507 is the portion where the first side edge 501 connects to the first end portion 503. As described below, during the alignment process for determining the position of the mask 50 relative to the frame 41, tension is applied to the mask 50 via a jig. The jig is attached to the portion of the first end 503 where the recess 505 is not formed. By including two or more recesses 505 on the first end 503, three or more jigs can be attached to the first end 503. This prevents the tension from fluctuating depending on the position in the second direction D2. The recess 505 has a dimension K1 in the second direction D2. The dimension K1 may be, for example, greater than 5 mm, greater than 15 mm, or greater than 20 mm. The dimension K1 may be, for example, less than 30 mm, less than 40 mm, or less than 50 mm. The range of the dimension K1 may be determined by the first group including 5 mm, 15 mm, and 20 mm, and / or the second group including 30 mm, 40 mm, and 50 mm. The range of the dimension K1 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension K1 may also be determined by a combination of any two of the values ​​included in the first group. The range of the dimension K1 may also be determined by a combination of any two of the values ​​included in the second group. The size K1 can be, for example, 5 mm to 50 mm, 5 mm to 40 mm, 5 mm to 30 mm, 5 mm to 20 mm, 5 mm to 15 mm, 15 mm to 50 mm, 15 mm to 40 mm, 15 mm to 30 mm, 15 mm to 20 mm, 20 mm to 50 mm, 20 mm to 40 mm, 20 mm to 30 mm, 30 mm to 50 mm, 30 mm to 40 mm, or 40 mm to 50 mm. In FIG6 , symbol K2 represents the interval between two adjacent recesses 505 in the second direction D2. Interval K2 may be, for example, greater than 10 mm, greater than 20 mm, or greater than 30 mm. Interval K2 may be, for example, less than 40 mm, less than 50 mm, or less than 60 mm. The range of interval K2 may be determined by the first group including 10 mm, 20 mm, and 30 mm, and / or the second group including 40 mm, 50 mm, and 60 mm. The range of interval K2 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of interval K2 may also be determined by a combination of any two of the values ​​included in the first group. The range of interval K2 may also be determined by a combination of any two of the values ​​included in the second group. The interval K2 can be, for example, greater than 10 mm and less than 60 mm, greater than 10 mm and less than 50 mm, greater than 10 mm and less than 40 mm, greater than 10 mm and less than 30 mm, greater than 10 mm and less than 20 mm, greater than 20 mm and less than 60 mm, greater than 20 mm and less than 50 mm, greater than 20 mm and less than 40 mm, greater than 20 mm and less than 30 mm, greater than 30 mm and less than 60 mm, greater than 30 mm and less than 50 mm, greater than 30 mm and less than 40 mm, greater than 40 mm and less than 60 mm, greater than 40 mm and less than 60 mm, greater than 40 mm and less than 50 mm, or greater than 50 mm and less than 60 mm. The recess 505 has a dimension K3 in the first direction D1. The dimension K3 may be, for example, greater than 15 mm, greater than 20 mm, or greater than 25 mm. The dimension K3 may be, for example, less than 30 mm, less than 40 mm, or less than 50 mm. The range of the dimension K3 may be determined by the first group including 15 mm, 20 mm, and 25 mm, and / or the second group including 30 mm, 40 mm, and 50 mm. The range of the dimension K3 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension K3 may also be determined by a combination of any two of the values ​​included in the first group. The range of the dimension K3 may also be determined by a combination of any two of the values ​​included in the second group. The size K3 can be, for example, greater than 15 mm and less than 50 mm, greater than 15 mm and less than 40 mm, greater than 15 mm and less than 30 mm, greater than 15 mm and less than 25 mm, greater than 15 mm and less than 20 mm, greater than 20 mm and less than 50 mm, greater than 20 mm and less than 40 mm, greater than 20 mm and less than 30 mm, greater than 20 mm and less than 25 mm, greater than 25 mm and less than 50 mm, greater than 25 mm and less than 40 mm, greater than 25 mm and less than 30 mm, greater than 30 mm and less than 50 mm, greater than 30 mm and less than 40 mm, or greater than 40 mm and less than 50 mm. To increase the size of the substrate 110 of the organic device group 102 shown in Figure 2, it is necessary to increase the size M11 of the mask 50. If the mask 50 is enlarged, the manufacturing equipment used to manufacture the mask will also be enlarged. For example, to manufacture a mask that supports an 8th generation substrate, an exposure mask that supports the 8th generation substrate is required. However, enlarging the exposure mask requires a huge investment. In this embodiment, a method is proposed to manufacture a mask 50 by performing two or more exposure processes. This method allows for the manufacture of a mask 50 with a size larger than that of an exposure mask. Therefore, a large mask 50 can be manufactured using existing exposure masks. In this embodiment, a scheme is proposed to form the first portion 50A using a first exposure mask and the second portion 50B using a second exposure mask. The second portion 50B is connected to the first portion 50A in the first direction D1. That is, in this embodiment, two exposure processes are performed at different positions in the first direction D1. This allows for an increase in the size of the mask 50 in the first direction D1. Part 1 50A includes at least a first intermediate portion 52a. Part 2 50B includes at least a second intermediate portion 52b. As shown in FIG5, the first intermediate portion 52a is a portion of the intermediate portion 52 that connects to the first end portion 51a in the first direction D1. The second intermediate portion 52b is a portion of the intermediate portion 52 that connects to the second end portion 51b in the first direction D1. The intermediate portion 52 is composed of the first intermediate portion 52a and the second intermediate portion 52b. The first intermediate portion 52a and the second intermediate portion 52b are connected in the first direction D1. Thus, in this embodiment, the intermediate portion 52 is formed by performing two or more exposure processes. This effectively increases the size of the intermediate portion 52 in the first direction D1. As shown in FIG5, the first part 50A may also include a first intermediate part 52a and a first end part 51a. That is, the first intermediate part 52a and the first end part 51a may also be formed using a first exposure mask. In this case, the first part 50A includes a first end 503. As shown in FIG5, the second part 50B may also include a second intermediate part 52b and a second end part 51b. That is, the second intermediate part 52b and the second end part 51b may also be formed using a second exposure mask. In this case, the second part 50B includes a second end 504. For example, when using a G6 half-generation exposure mask to form the entire mask 50, the dimension M11 of the mask 50 is approximately 1200 mm, and the dimension M12 of the center portion 52 is approximately 900 mm. By using two G6 half-generation exposure masks to form the first portion 50A and the second portion 50B, the dimension M11 of the mask 50 can be reduced to approximately 2400 mm, and the dimension M12 of the center portion 52 can be reduced to approximately 2100 mm. The dimension M12 of the middle portion 52 in the first direction D1 is the same as the dimension G12 of the device region 103 shown in FIG. 2. Therefore, by using a vapor deposition method with a single mask 50, a first organic layer 130A, for example, of two or more organic devices 100 arranged in the first direction D1 as shown in FIG. 2, can be formed. In other words, by increasing the dimension M12 of the middle portion 52 in the first direction D1, the dimension G12 of the device region 103 can be increased. This reduces the manufacturing cost of the organic device 100. The dimension M12 of the middle portion 52 may be, for example, greater than 1000 mm, greater than 1200 mm, greater than 1400 mm, or greater than 1700 mm. The dimension M12 may be, for example, less than 2000 mm, less than 2300 mm, less than 2600 mm, or less than 3000 mm. The range of the dimension M12 may be determined by the first group consisting of 1000 mm, 1200 mm, 1400 mm, and 1700 mm, and / or the second group consisting of 2000 mm, 2300 mm, 2600 mm, and 3000 mm. The range of the dimension M12 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension M12 may also be determined by a combination of any two of the values ​​included in the first group. The range of dimension M12 may also be determined by a combination of any two of the values ​​included in the second group above. The size M12 may be, for example, 1000 mm to 3000 mm, 1000 mm to 2600 mm, 1000 mm to 2300 mm, 1000 mm to 2000 mm, 1000 mm to 1700 mm, 1000 mm to 1400 mm, 1000 mm to 1200 mm, 1200 mm to 3000 mm, 1200 mm to 2600 mm, 1200 mm to 2300 mm, 1200 mm to 2000 mm, 1200 mm to 1700 mm, 1200 mm to 1400 mm, 1400 mm to 3000 mm, 1400 mm to 2600 mm, mm or less, may be between 1400 mm and 2300 mm, may be between 1400 mm and 2000 mm, may be between 1400 mm and 1700 mm, may be between 1700 mm and 3000 mm, may be between 1700 mm and 2600 mm, may be between 1700 mm and 2300 mm, may be between 1700 mm and 2000 mm, may be between 2000 mm and 3000 mm, may be between 2000 mm and 2600 mm, may be between 2000 mm and 2300 mm, may be between 2300 mm and 3000 mm, may be between 2300 mm and 2600 mm, or may be between 2600 mm and 3000 mm. The first portion 50A has a dimension M15 in the first direction D1. Dimension M15 can be greater than 900 mm, greater than 1090 mm, greater than 1200 mm, or greater than 2000 mm. Dimension M15 can be, for example, less than 1100 mm, less than 1200 mm, less than 1800 mm, less than 2000 mm, or less than 2200 mm. The range of dimension M15 can be determined by the first group consisting of 900 mm, 1090 mm, 1200 mm, and 2000 mm, and / or the second group consisting of 1100 mm, 1200 mm, 1800 mm, 2000 mm, and 2200 mm. The range of dimension M15 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension M15 can also be determined by a combination of any two of the values ​​included in the above group 1. The range of dimension M15 can also be determined by a combination of any two of the values ​​included in the above group 2. For example, the size M15 may be greater than 900 mm and less than 2200 mm, greater than 900 mm and less than 2000 mm, greater than 900 mm and less than 1800 mm, greater than 900 mm and less than 1200 mm, greater than 900 mm and less than 1100 mm, greater than 1090 mm and less than 2200 mm, greater than 1090 mm and less than 2000 mm, greater than 1090 mm and less than 1800 mm, greater than 1090 mm and less than 1200 mm, greater than 1200 mm and less than 2200 mm, greater than 1200 mm and less than 2000 mm, greater than 1200 mm and less than 1800 mm, greater than 1800 mm and less than 2200 mm, greater than 1800 mm and less than 2000 mm, or greater than 2000 mm and less than 2200 mm. The second portion 50B has a dimension M16 in the first direction D1. As the range of the dimension M16, the numerical range of the dimension M15 described above can be adopted. The ratio of dimension M16 of the second portion 50B to dimension M15 of the first portion 50A, i.e., M16 / M15, can be, for example, greater than 0.5, greater than 0.7, or greater than 0.9. M16 / M15 can be, for example, less than 1.1, less than 1.3, or less than 1.5. The range of M16 / M15 can be determined by the first group consisting of 0.5, 0.7, and 0.9, and / or the second group consisting of 1.1, 1.3, and 1.5. The range of M16 / M15 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of M16 / M15 can also be determined by a combination of any two of the values ​​included in the first group. The range of M16 / M15 can also be determined by a combination of any two of the values ​​included in the second group. For example, M16 / M15 can be greater than 0.5 and less than 1.5, greater than 0.5 and less than 1.3, greater than 0.5 and less than 1.1, greater than 0.5 and less than 0.9, greater than 0.5 and less than 0.7, greater than 0.7 and less than 1.5, greater than 0.7 and less than 1.3, greater than 0.7 and less than 1.1, greater than 0.7 and less than 0.9, greater than 0.9 and less than 1.5, greater than 0.9 and less than 1.3, greater than 0.9 and less than 1.1, greater than 1.1 and less than 1.5, greater than 1.1 and less than 1.3, or greater than 1.3 and less than 1.5. Referring to Figures 5 and 7A, the structural features of the mask 50 produced by the method of this embodiment will be described in detail. Figure 7A is a top view showing an example of the first intermediate portion 52a and the second intermediate portion 52b. Part 1 50A includes at least one through-hole group 53. Part 2 50B also includes at least one through-hole group 53. In the following description, the through-hole group 53 of Part 1 50A is also referred to as the first through-hole group and is denoted by the symbol 53a. In the following description, the through-hole group 53 of Part 2 50B is also referred to as the second through-hole group and is denoted by the symbol 53b. In Figure 7A, the boundary line BL between part 1 50A and part 2 50B is represented by a single-point chain line extending along the second direction D2. Part 2 50B includes a second through-hole group 53b adjacent to the first through-hole group 53a of part 1 50A in the first direction D1. The boundary between part 1 50A and part 2 50B lies between the first through-hole group 53a and the second through-hole group 53b. As shown in FIG7A , the first side edge 501 may also include a first step 501a located at the boundary between the first portion 50A and the second portion 50B. In other words, the first step 501a may serve as a boundary to distinguish the first portion 50A and the second portion 50B. The first step 501a is preferably positioned between two adjacent through-hole groups 53 in the first direction D1. In other words, when the mask 50 is viewed along the second direction D2, it is preferred that the first step 501a does not overlap with the through-hole group 53. Although not shown, the first step 501a may also be positioned within a single through-hole group 53 in the first direction D1. That is, when the mask 50 is viewed along the second direction D2, the first step 501a may also overlap with the through-hole group 53. In this case, the first step 501a in the first direction D1 is located between two adjacent through-holes 56 in one through-hole group 53. That is, when the mask 50 is viewed along the second direction D2, the first step 501a does not overlap with the through-hole 56. The first step 501a is displaced in the second direction D2. In the example shown in FIG7A , as the first step 501a approaches the first end 503 in the first direction D1, it is displaced outward in the second direction D2. That is, the first side edge 501 of the first portion 50A is located further outward in the second direction D2 than the first side edge 501 of the second portion 50B. "Further outward in the second direction D2" means further away from the center C1 of the mask 50 in the second direction D2. Although not shown, the first step 501a may also be displaced inward in the second direction D2 as it approaches the first end 503 in the first direction D1. That is, the first side edge 501 of the first portion 50A is located further inward in the second direction D2 than the first side edge 501 of the second portion 50B. “Further inward in the second direction D2” means a side closer to the center C1 of the mask 50 in the second direction D2. The center C1 of the mask 50 is located between the boundary line BL1 and the boundary line BL2. The first step 501a is caused by the difference between the steps for forming the first portion 50A and the steps for forming the second portion 50B. For example, the first step 501a is caused by the difference between the first exposure mask used to form the first portion 50A and the second exposure mask used to form the second portion 50B. If the relative position of the second exposure mask with respect to the first exposure mask in the second direction D2 deviates from the ideal position, the first step 501a is generated by the amount of the deviation. The first step 501a has a dimension S1 in the second direction D2. Dimension S1 may be, for example, greater than 0.1 μm, greater than 0.2 μm, greater than 0.5 μm, or greater than 1.0 μm. Dimension S1 may be, for example, less than 1.5 μm, less than 2.0 μm, less than 2.5 μm, or less than 3.0 μm. The range of dimension S1 may be determined by the first group consisting of 0.1 μm, 0.2 μm, 0.5 μm, and 1.0 μm, and / or the second group consisting of 1.5 μm, 2.0 μm, 2.5 μm, and 3.0 μm. The range of dimension S1 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension S1 may also be determined by a combination of any two of the values ​​included in the first group. The range of size S1 can also be determined by any combination of any two of the values ​​included in the second group above. The size S1 may be, for example, 0.1 μm to 3.0 μm, 0.1 μm to 2.5 μm, 0.1 μm to 2.0 μm, 0.1 μm to 1.5 μm, 0.1 μm to 1.0 μm, 0.1 μm to 0.5 μm, 0.1 μm to 0.2 μm, 0.2 μm to 3.0 μm, 0.2 μm to 2.5 μm, 0.2 μm to 2.0 μm, 0.2 μm to 1.5 μm, 0.2 μm to 1.0 μm, 0.2 μm to 0.5 μm, 0.5 μm to 3.0 μm, or 0.5 μm to 2.5 μm. The thickness of the thin film may be less than 1 μm, or 0.5 μm to 2.0 μm, or 0.5 μm to 1.5 μm, or 0.5 μm to 1.0 μm, or 1.0 μm to 3.0 μm, or 1.0 μm to 2.5 μm, or 1.0 μm to 2.0 μm, or 1.0 μm to 1.5 μm, or 1.5 μm to 3.0 μm, or 1.5 μm to 2.5 μm, or 1.5 μm to 2.0 μm, or 2.0 μm to 3.0 μm, or 2.0 μm to 2.5 μm, or 2.5 μm to 3.0 μm. As shown in FIG7A , the second side edge 502 may also include a second step 502a. The second step 502a may also be located at the boundary between the first portion 50A and the second portion 50B. The second step 502a is preferably positioned between two adjacent through-hole groups 53 in the first direction D1. In other words, when the mask 50 is viewed along the second direction D2, it is preferred that the second step 502a does not overlap with the through-hole group 53. Although not shown, the second step 502a may also be positioned within a single through-hole group 53 in the first direction D1. In other words, when the mask 50 is viewed along the second direction D2, the second step 502a may also overlap with the through-hole group 53. In this case, the second step portion 502a is located between two adjacent through-holes 56 in a through-hole group 53 in the first direction D1. That is, when the mask 50 is viewed along the second direction D2, the second step portion 502a does not overlap with the through-hole 56. Although not shown, the second side edge 502 may not include the second step portion 502a. The second step portion 502a has a dimension S2 in the second direction D2. The range of the dimension S2 can be the same as the range of the dimension S1 of the first step portion 501a. As shown in FIG7A , the length direction of the second portion 50B is slightly different from the length direction of the first portion 50A. For example, the first arrangement direction of the first through-hole group 53a and the second arrangement direction of the second through-hole group 53b form a first angle. In other words, the first arrangement direction and the second arrangement direction are not parallel. The first arrangement direction is the arrangement direction of the through-holes 56 belonging to the first through-hole group 53a adjacent to the second through-hole group 53b and arranged along the first side edge 501. The first arrangement direction is represented by the straight line L1 shown in FIG7A. Straight line L1 passes through the plurality of through-holes 56 arranged along the first side edge 501 of the first through-hole group 53a. For example, straight line L1 passes through through-hole 56A1 and through-hole 56A2. Through-hole 56A1 is the through-hole 56 closest to the first side edge 501 and the second portion 50B among the through-holes 56 in the first through-hole group 53a adjacent to the second through-hole group 53b. The through hole 56A2 is the through hole 56 closest to the first side edge 501 and farthest from the second portion 50B among the through holes 56 of the first through hole group 53a adjacent to the second through hole group 53b. The second arrangement direction is the arrangement direction of the through-holes 56 that belong to the second through-hole group 53b adjacent to the first through-hole group 53a and are arranged along the first side edge 501. The second arrangement direction is represented by the straight line L2 shown in Figure 7A. Straight line L2 passes through the plurality of through-holes 56 in the second through-hole group 53b that are arranged along the first side edge 501. For example, straight line L2 passes through through-hole 56B1 and through-hole 56B2. Through-hole 56B1 is the through-hole 56 closest to the first side edge 501 and the first portion 50A among the through-holes 56 in the second through-hole group 53b adjacent to the first through-hole group 53a. The through hole 56B2 is the through hole 56 closest to the first side edge 501 and farthest from the first portion 50A among the through holes 56 of the second through hole group 53b adjacent to the first through hole group 53a. As shown in FIG. 7B , a first angle θ1 formed by the first arrangement direction and the second arrangement direction is an angle formed by the straight line L1 and the straight line L2 . In the examples shown in Figures 7A and 7B, the first arrangement direction represented by line L1 deviates clockwise relative to the second arrangement direction represented by line L2. As shown in Figure 7C, the first arrangement direction represented by line L1 can also deviate counterclockwise relative to the second arrangement direction represented by line L2. The first angle θ1 is generated because the steps for forming the first portion 50A and the second portion 50B differ. For example, the first angle θ1 is generated because the first exposure mask used to form the first portion 50A differs from the second exposure mask used to form the second portion 50B. If the direction of the side of the second exposure mask deviates from the ideal direction of the side of the first exposure mask, the first angle θ1 is generated by the amount of the deviation. The first angle θ1 can be, for example, greater than or equal to 0.00021°, greater than or equal to 0.00042°, greater than or equal to 0.00063°, or greater than or equal to 0.00084°. The first angle θ1 can be less than or equal to 0.00105°, less than or equal to 0.00125°, less than or equal to 0.00167°, or less than or equal to 0.00209°. The range of the first angle θ1 can be determined by a first group including 0.00021°, 0.00042°, 0.00063° and 0.00084°, and / or a second group including 0.00105°, 0.00125°, 0.00167° and 0.00209°. The range of the first angle θ1 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the first angle θ1 can also be determined by a combination of any two of the values ​​included in the first group. The range of the first angle θ1 can also be determined by a combination of any two of the values ​​included in the second group.The first angle θ1 may be, for example, 0.00021° to 0.00209°, 0.00021° to 0.00167°, 0.00021° to 0.00125°, 0.00021° to 0.00105°, 0.00021° to 0.00084°, 0.00021° to 0.00063°, or 0.00021° to 0.00067°. 42° or less, 0.00042° or more and 0.00209° or less, 0.00042° or more and 0.00167° or less, 0.00042° or more and 0.00125° or less, 0.00042° or more and 0.00105° or less, 0.00042° or more and 0.00084° or less, 0.00042° or more and 0.00063° or less, 0.00063° or more and 0.00209 ° or less, or 0.00063° or more and 0.00167° or less, or 0.00063° or more and 0.00125° or less, or 0.00063° or more and 0.00105° or less, or 0.00063° or more and 0.00084° or less, or 0.00084° or more and 0.00209° or less, or 0.00084° or more and 0.00167° or less, or 0.00084° or more and 0.00125° or less. Below, it can also be 0.00084° or higher than 0.00105°, or 0.00105° or higher than 0.00209°, or 0.00105° or higher than 0.00167°, or 0.00105° or higher than 0.00125°, or 0.00125° or higher than 0.00209°, or 0.00125° or higher than 0.00167°, or 0.00167° or higher than 0.00209°. Even when tension is applied to the mask 50 in the first direction D1, the angular deviation between the first part 50A and the second part 50B, such as the first angle θ1, may be eliminated to some extent, but not completely. According to this embodiment, since the first angle θ1 is within the aforementioned range, even if an angular deviation occurs on the mask 50, the PPA can be suppressed below a threshold. PPA stands for Pixel Position Accuracy. PPA corresponds to the distance between the coordinates of the actual through-hole 56 and the coordinates of the ideal through-hole 56. The smaller the first angle θ1, the smaller the PPA. The first angle θ1 can be reduced by improving the accuracy of adjusting the positions of the first and second exposure masks. For example, when using a drive device to adjust the positions of the first and second exposure masks, the accuracy of position adjustment can be improved by reducing the minimum distance the drive device can move. However, the smaller the minimum distance, the longer the adjustment time required, and the lower the productivity of the mask 50. As shown in the following embodiment, when the first angle θ1 is within the above-mentioned numerical range, the PPA is suppressed below the threshold value. According to this embodiment, by not excessively reducing the first angle θ1, the productivity of the mask 50 can be improved. The threshold value of PPA is determined by the distribution density of the through holes 56. The threshold value of PPA may be, for example, 5.0 μm, 4.0 μm, 3.0 μm, 2.0 μm, or 1.0 μm. The larger the first angle θ1 is, the worse the PPA is. The dimension S1 of the first step 501a may also affect the PPA. The first angle θ1 can also be determined based on the PPA and the dimension S1. For example, the following relationship can also be established between the first angle θ1 and the dimension S1. 4820 [μm / °] × θ1 [°] + S1 [μm] ≦ threshold value × 2 [μm] For example, when the threshold value of PPA is 6.0 μm, the following relationship can also be established. 4820 [μm / °] × θ1 [°] + S1 [μm] ≦ 6.0 [μm] These relationship formulas can also be used when the dimension M12 of the middle portion 52 in the first direction D1 is less than 2200 mm. The third arrangement direction of the first through hole group 53a and the fourth arrangement direction of the second through hole group 53b can also form a second angle. The third arrangement direction is the arrangement direction of the through-holes 56 that belong to the first through-hole group 53a adjacent to the second through-hole group 53b and are arranged along the second side edge 502. The third arrangement direction is represented by the straight line L3 shown in Figure 7A. Straight line L3 passes through the plurality of through-holes 56 that are arranged along the second side edge 502 of the first through-hole group 53a. For example, straight line L3 passes through through-hole 56A3 and through-hole 56A4. Through-hole 56A3 is the through-hole 56 closest to the second side edge 502 and the second portion 50B among the through-holes 56 in the first through-hole group 53a adjacent to the second through-hole group 53b. The through hole 56A4 is the through hole 56 in the first through hole group 53a that is adjacent to the second through hole group 53b, and is the one closest to the second side edge 502 and farthest from the second part 50B. The fourth arrangement direction is the arrangement direction of the through-holes 56 that belong to the second through-hole group 53b adjacent to the first through-hole group 53a and are arranged along the second side edge 502. The fourth arrangement direction is represented by the straight line L4 shown in FIG7A. Straight line L4 passes through the plurality of through-holes 56 that are arranged along the second side edge 502 of the second through-hole group 53b. For example, straight line L4 passes through through-hole 56B3 and through-hole 56B4. Through-hole 56B3 is the through-hole 56 that is closest to the second side edge 502 and closest to the first portion 50A among the through-holes 56 in the second through-hole group 53b adjacent to the first through-hole group 53a. The through hole 56B4 is the through hole 56 closest to the second side edge 502 and farthest from the first portion 50A among the through holes 56 of the second through hole group 53b adjacent to the first through hole group 53a. The second angle formed by the third and fourth arrangement directions is the angle formed by the straight lines L3 and L4. The range of values ​​for the second angle can be the same as the range of values ​​for the first angle θ1. Figure 8 is a top view showing an example of the first intermediate portion 52a and the second intermediate portion 52b. Reference symbol G1 denotes the distance in the second direction D2 between through-hole 56A1 of the first through-hole group 53a and through-hole 56B1 of the second through-hole group 53b. Similar to first step 501a, distance G1 results from the difference in the formation steps of first portion 50A and second portion 50B. Distance G1 can be, for example, 0.5 μm or greater, 1.0 μm or greater, or 2.0 μm or greater. The boundary between the first part 50A and the second part 50B can be determined based on the distance G1. That is, the first through hole group 53a and the second through hole group 53b can be identified based on the distance G1. The range of the value of the distance G1 can be the range of the value of the dimension S1 of the first step 501a mentioned above. Symbol G2 represents the distance in the second direction D2 between through-hole 56A3 of the first through-hole group 53a and through-hole 56B3 of the second through-hole group 53b. Similar to the second step 502a, distance G2 results from the difference in the formation steps of first portion 50A and second portion 50B. Distance G2 can be, for example, 0.5 μm or greater, 1.0 μm or greater, or 2.0 μm or greater. The range of values ​​for distance G2 can be the same as the range of values ​​for dimension S1 of the first step 501a described above. As shown in Figure 5, the intermediate portion 52 may also include two or more first intermediate marks 58a arranged along the first side edge 501. In the manufacturing method of the mask 50, the position of the first intermediate mark 58a is determined simultaneously with the position of the outer edge of the intermediate portion 52. For example, the position of the first intermediate mark 58a located in the first part 50A is determined simultaneously with the position of the outer edge of the first intermediate portion 52a. For example, the position of the first intermediate mark 58a located in the second part 50B is determined simultaneously with the position of the outer edge of the second intermediate portion 52b. "The positions of the two constituent elements are determined simultaneously" means that the resist layers corresponding to the two constituent elements are simultaneously exposed by the same exposure mask. The first intermediate mark 58a is, for example, a recess formed on the first surface 551 or a recess formed on the second surface 552. The depth of the recess may be, for example, 2 μm or more, 3 μm or more, or 5 μm or more. The depth of the recess may be, for example, 10 μm or less, 20 μm or less, or 30 μm or less. The range of the recess depth may be determined by a first group including 2 μm, 3 μm, and 5 μm, and / or a second group including 10 μm, 20 μm, and 30 μm. The range of the recess depth may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the recess depth may also be determined by a combination of any two of the values ​​included in the first group. The range of the recess depth may also be determined by a combination of any two of the values ​​included in the second group. For example, the depth of the recess can be 2 μm or more but less than 30 μm, or 2 μm or more but less than 20 μm, or 2 μm or more but less than 10 μm, or 2 μm or more but less than 5 μm, or 2 μm or more but less than 3 μm, or 3 μm or more but less than 30 μm, or 3 μm or more but less than 20 μm, or 3 μm or more but less than 10 μm, or 3 μm or more but less than 5 μm, or 5 μm or more but less than 30 μm, or 5 μm or more but less than 20 μm, or 5 μm or more but less than 10 μm, or 10 μm or more but less than 30 μm, or 10 μm or more but less than 20 μm, or 20 μm or more but less than 30 μm. The first intermediate mark 58a can also be a through hole extending from the first surface 551 to the second surface 552. The size of the first intermediate mark 58a in a plan view may also be larger than the dimension r of the through portion 564 of the through-hole 56. The ratio of the size of the first mark 58c in a plan view to the dimension r of the through portion 564 may be, for example, 1.03 or greater, 2.0 or greater, or 5.0 or greater. The ratio of the size of the first intermediate mark 58a in a plan view to the dimension r of the through portion 564 may be, for example, 5.0 or less, 10 or less, or 50 or less. The range of the ratio of the size of the first intermediate mark 58a in a plan view to the dimension r of the through portion 564 may be determined by a first group consisting of 1.03, 2.0, and 5.0, and / or a second group consisting of 5.0, 10, and 50. The range of the ratio of the size of the first intermediate mark 58a in a plan view to the size r of the through portion 564 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of the size of the first intermediate mark 58a in a plan view to the size r of the through portion 564 can also be determined by a combination of any two of the values ​​included in the first group. The range of the ratio of the size of the first intermediate mark 58a in a plan view to the size r of the through portion 564 can also be determined by a combination of any two of the values ​​included in the second group. For example, the ratio of the size of the first intermediate mark 58a in a top view to the size r of the through portion 564 may be greater than 1.03 and less than 50, or greater than 1.03 and less than 10, or greater than 1.03 and less than 5.0, or greater than 1.03 and less than 5.0, or greater than 1.03 and less than 2.0, or greater than 2.0 and less than 50, or greater than 2.0 and less than 10, or greater than 2.0 and less than 5.0, or greater than 2.0 and less than 5.0, or greater than 5.0 and less than 2.0, or greater than 5.0 and less than 50, or greater than 5.0 and less than 10, or greater than 5.0 and less than 50, or greater than 5.0 and less than 10, or greater than 10 and less than 50. As shown in Figure 5, the first end 51a may also include the first mark 58c. When the mask 50 is viewed along the first direction D1, the first mark 58c of the first end 51a may also overlap with the first intermediate mark 58a of the first part 50A. As shown in Figure 5, the second end 51b may also include the first mark 58c. When the mask 50 is viewed along the first direction D1, the first mark 58c of the second end 51b may also overlap with the first intermediate mark 58a of the second part 50B. The first mark 58c, like the first intermediate mark 58a, can be a recess formed on the first surface 551, or a recess formed on the second surface 552, or a through hole. As shown in FIG5 , the middle portion 52 may also include two or more second middle marks 58b arranged along the second side edge 502. During the method for manufacturing the mask 50, the positions of the second middle marks 58b are determined simultaneously with the position of the outer edge of the middle portion 52. For example, the position of the second middle mark 58b located in the first portion 50A is determined simultaneously with the position of the outer edge of the first middle portion 52a. For example, the position of the second middle mark 58b located in the second portion 50B is determined simultaneously with the position of the outer edge of the second middle portion 52b. 5 , the first end portion 51a may also include a second mark 58d. When the mask 50 is viewed along the first direction D1, the second mark 58d of the first end portion 51a may overlap with the second middle mark 58b of the first portion 50A. 5 , the second end portion 51b may also include a second mark 58d. When the mask 50 is viewed along the first direction D1, the second mark 58d of the second end portion 51b may overlap with the second middle mark 58b of the second portion 50B. The second intermediate mark 58b and the second mark 58d may be recessed portions formed on the first surface 551 or the second surface 552 , or may be through holes, similarly to the first intermediate mark 58a . Figure 9 is a top view showing an example of the first intermediate portion 52a and the second intermediate portion 52b. Reference symbol G3 denotes the distance in the second direction D2 between the fifth reference point P5 and the seventh reference point P7. The fifth reference point P5 is defined by the first intermediate mark 58a located in the first portion 50A that is closest to the second portion 50B. The seventh reference point P7 is defined by the first intermediate mark 58a located in the second portion 50B that is closest to the first portion 50A. Similar to the first step 501a, the distance G3 arises from the difference in the formation steps of the first portion 50A and the second portion 50B. For example, the distance G3 can be greater than 0.5 μm, greater than 1.0 μm, or greater than 2.0 μm. The boundary between the first part 50A and the second part 50B can also be determined based on the distance G3. That is, the boundary between the first part 50A and the second part 50B can also be determined between the two first intermediate marks 58a that generate the distance G3. The range of the distance G3 value can be the range of the value of the dimension S1 of the first step 501a mentioned above. Symbol G4 represents the distance in the second direction D2 between the sixth reference point P6 and the eighth reference point P8. The sixth reference point P6 is defined by the second intermediate mark 58b located in the first portion 50A that is closest to the second portion 50B. The eighth reference point P8 is defined by the second intermediate mark 58b located in the second portion 50B that is closest to the first portion 50A. Similar to the second step 502a, distance G4 arises from the difference in the formation steps of the first portion 50A and the second portion 50B. Distance G4 can be, for example, 0.5 μm or greater, 1.0 μm or greater, or 2.0 μm or greater. The range of values ​​for distance G4 can be the same as the range of values ​​for dimension S1 of the first step 501a described above. The positions of through-hole 56, first side edge 501, second side edge 502, first end 503, second end 504, etc. are measured by capturing an image of the mask 50 from a top view and analyzing the image. The image is taken along the normal direction of first surface 551, using light passing through through-hole 56 and ambient light passing through the outer edge of mask 50. The measuring instrument used is an AMIC-2500 manufactured by Shinto S Precision. If marks 58a-58d are through-holes, the positions of marks 58a-58d are measured based on an image captured using light passing through marks 58a-58d. The measuring instrument used is an AMIC-2500 manufactured by Shinto S Precision. If marks 58a-58d are recesses that do not penetrate substrate 55, the positions of marks 58a-58d are measured based on an image captured using light reflected from mask 50. Next, the cross-sectional structure of the mask 50 will be described. Figure 10 is a cross-sectional view of the mask 50 in Figure 5 viewed from the AA direction. The mask 50 has a substrate 55 and a through hole 56 penetrating the substrate 55. The substrate 55 includes a first surface 551 and a second surface 552. The through hole 56 penetrates the substrate 55 from the first surface 551 to the second surface 552. The through-hole 56 may also include a first recess 561, a second recess 562, and a connecting portion 563 connecting the first recess 561 and the second recess 562. The first recess 561 is located on the first surface 551 and is recessed toward the second surface 552. The second recess 562 is located on the second surface 552 and is recessed toward the first surface 551. By connecting the first recess 561 and the second recess 562, the through-hole 56 is formed, penetrating the substrate 55. The first recess 561 is formed by processing the substrate 55 from the first surface 551 side using etching or laser processing. The second recess 562 is formed by processing the substrate 55 from the second surface 552 side using etching or laser processing. The first recess 561 has a dimension r1 when viewed from above. The second recess 562 has a dimension r2 when viewed from above. Dimension r2 may also be larger than dimension r1. For example, when viewed from above, the outline of the second recess 562 may also surround the outline of the first recess 561. The connecting portion 563 may also have a continuous outline extending around the circumference. The connecting portion 563 may also be located between the first surface 551 and the second surface 552. The connecting portion 563 may also be divided into a through portion 564 with the smallest opening area formed in the top view of the through hole 56 of the shield 50. The dimension r of the through portion 564 can be, for example, 10 μm or more, 15 μm or more, 20 μm or more, or 25 μm or more. Alternatively, the dimension r of the through portion 564 can be, for example, 40 μm or less, 45 μm or less, 50 μm or less, or 55 μm or less. The range of the dimension r of the through portion 564 can be determined by a first group including 10 μm, 15 μm, 20 μm, and 25 μm, and / or a second group including 40 μm, 45 μm, 50 μm, and 55 μm. The range of the dimension r of the through portion 564 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension r of the through portion 564 can also be determined by a combination of any two of the values ​​included in the first group. The range of the dimension r of the through portion 564 may also be determined by a combination of any two of the values ​​included in the second group. For example, the dimension r of the through portion 564 can be 10 μm or more and 55 μm or less, or 10 μm or more and 45 μm or less, or 10 μm or more and 40 μm or less, or 10 μm or more and 25 μm or less, or 10 μm or more and 20 μm or less, or 10 μm or more and 15 μm or less, or 15 μm or more and 55 μm or less, or 15 μm or more and 45 μm or less, or 15 μm or more and 40 μm or less, or 15 μm or more and 25 μm or less, or 15 μm or more and 20 μm or less, or 20 μm or more and 55 μm or less, or 20 μm or more and 50 μm or less, or 20 μm or more and 45 μm or less, or 20 μm or more and 40 μm or less. It can be below μm, or above 20 μm and below 25 μm, or above 25 μm and below 55 μm, or above 25 μm and below 50 μm, or above 25 μm and below 45 μm, or above 25 μm and below 40 μm, or above 40 μm and below 55 μm, or above 40 μm and below 50 μm, or above 45 μm and below 55 μm, or above 45 μm and below 50 μm, or above 50 μm and below 55 μm. The dimension r of the through-hole 564 can be defined by the light passing through the through-hole 56. Specifically, parallel light is incident along the normal direction of the mask 50 onto one of the first surface 551 or the second surface 552 of the mask 50, and then passes through the through-hole 56 and exits from the other of the first surface 551 or the second surface 552. The dimension r of the through-hole 564 is taken as the size of the area occupied by the emitted light in the surface direction of the mask 50. FIG10 illustrates an example in which the second surface 552 of the substrate 55 remains between two adjacent second recesses 562, but the present invention is not limited thereto. Although not shown, etching may be performed to connect two adjacent second recesses 562. In other words, a portion where the second surface 552 of the substrate 55 does not remain may exist between two adjacent second recesses 562. As shown in FIG10 , the first end 503, like the through-hole 56, can include a recessed portion formed on a surface of the substrate 55. In the example shown in FIG10 , the first end 503 includes a third recessed portion 571 located on the first surface 551 and a fourth recessed portion 572 located on the second surface 552. Like the first recessed portion 561 and the second recessed portion 562, the third recessed portion 571 and the fourth recessed portion 572 are formed by processing the substrate 55 using etching, laser processing, or the like. Although not shown, the first end 503 may include the fourth recess 572 located on the second surface 552 instead of the third recess 571 located on the first surface 551. In this case, the first end 503 is formed by processing the substrate 55 from the second surface 552 side by etching or the like so that the fourth recess 572 reaches the first surface 551. Although not shown in the figure, the outer edges of the first side edge 501, the second side edge 502, the second end 504, etc., can also include recesses formed on the surface of the substrate 55, just like the first end 503. The materials of the mask 50 and frame 41 will be described. As the main materials of the mask 50 and frame 41, an iron alloy containing nickel can be used. For example, as the material of the substrate 55 of the mask 50, an iron alloy with a total nickel content of 28% by mass or more and 54% by mass or less can be used. This reduces the difference in the coefficient of thermal expansion between the mask 50 and frame 41 and the substrate 110 containing the glass. Therefore, the dimensional and positional accuracy of the vapor-deposited layer formed on the substrate 110 can be suppressed from decreasing due to the thermal expansion of the mask 50, frame 41, substrate 110, etc. The iron alloy may also contain cobalt in addition to nickel. For example, as the material of the substrate 55 of the mask 50, an iron alloy with a total nickel and cobalt content of 28% by mass or more and 54% by mass or less, and a cobalt content of 0% by mass or more and 6% by mass or less can be used. The nickel content in the substrate 55 can also be 28% by mass or more and 38% by mass or less. The combined nickel and cobalt content in the substrate 55 can also be 28% by mass or more and 38% by mass or less. In this case, specific examples of ferroalloys containing nickel or nickel and cobalt can include inver, super inver, and ultra inver. Inver is a ferroalloy containing 34% by mass or more and 38% by mass of nickel, the remainder of iron, and unavoidable impurities. Super inver is a ferroalloy containing 30% by mass or more and 34% by mass of nickel, cobalt, the remainder of iron, and unavoidable impurities. Special grade ingot material is an iron alloy containing more than 28% by mass and less than 34% by mass of nickel, more than 2% by mass and less than 7% by mass of cobalt, more than 0.1% by mass and less than 1.0% by mass of manganese, less than 0.10% by mass of silicon, less than 0.01% by mass of carbon, and the remainder being iron and unavoidable impurities. The total content of nickel and cobalt in the mask 50 may be 38% to 54% by mass. For example, the mask 50 may be made of an iron alloy containing 38% to 54% by mass of nickel, with the remainder being iron and unavoidable impurities. This type of mask 50 may be manufactured by plating. Furthermore, when the temperatures of the mask 50, frame 41, and substrate 110 do not reach high temperatures during the vapor deposition process, it is not necessary for the coefficients of thermal expansion of the mask 50 and frame 41 to be equal to those of the substrate 110. In this case, materials other than the aforementioned iron alloys can be used as the material constituting the mask 50. For example, iron alloys other than the aforementioned nickel-containing iron alloys, such as chromium-containing iron alloys, can be used. As a chromium-containing iron alloy, for example, an iron alloy known as stainless steel can be used. Also, alloys other than iron alloys, such as nickel or nickel-cobalt alloys, can be used. The thickness T of the mask 50 may be, for example, greater than 10 μm, greater than 15 μm, greater than 20 μm, or greater than 30 μm. The thickness T may be, for example, less than 35 μm, less than 50 μm, less than 80 μm, or less than 100 μm. The range of the thickness T may be determined by the first group consisting of 10 μm, 15 μm, 20 μm, and 30 μm, and / or the second group consisting of 35 μm, 50 μm, 80 μm, and 100 μm. The range of the thickness T may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T may also be determined by a combination of any two of the values ​​included in the first group. The range of the thickness T may also be determined by a combination of any two of the values ​​included in the second group. The thickness T may be, for example, 10 μm to 100 μm, 10 μm to 80 μm, 10 μm to 50 μm, 10 μm to 35 μm, 10 μm to 30 μm, 10 μm to 20 μm, 10 μm to 15 μm, 15 μm to 100 μm, 15 μm to 80 μm, 15 μm to 50 μm, 15 μm to 35 μm, 15 μm to 30 μm, 15 μm to 20 μm, 20 μm to 100 μm, 20 μm to 80 μm, 20 μm to 50 μm, or 20 μm to 35 μm. The thickness of the nanostructured carbon foam may be less than 100 μm, more than 20 μm and less than 30 μm, more than 30 μm and less than 100 μm, more than 30 μm and less than 80 μm, more than 30 μm and less than 50 μm, more than 30 μm and less than 35 μm, more than 35 μm and less than 100 μm, more than 35 μm and less than 80 μm, more than 35 μm and less than 50 μm, more than 50 μm and less than 100 μm, more than 50 μm and less than 80 μm, or more than 80 μm and less than 100 μm. The greater the thickness T of the shield 50, the higher its rigidity. By giving the shield 50 higher rigidity, large-scale local deformation of the shield 50 around the first step 501a or the second step 502a can be suppressed when tension is applied to the shield 50 in the first direction D1. In this way, deviations in the position of the through holes 56 of the through hole group 53 adjacent to the first step 501a or the second step 502a from the ideal can be suppressed. The smaller the thickness T of the mask 50 is, the smaller the proportion of the vapor deposition material 7 adhering to the wall surface of the through hole 56 before passing through the through hole 56 is. This can improve the utilization efficiency of the vapor deposition material 7. The thickness T is measured using a contact method. The contact method uses a HEIDENHAIM-METRO "MT1271" length gauge manufactured by HEIDENHAIN Corporation, which features a ball bush guide plunger. Next, the method for manufacturing the mask 50 will be described. First, a substrate is prepared. The substrate is prepared in such a way that it extends along the first direction D1 and is wound onto a roll. In this case, the substrate drawn from the roll is transported toward the exposure apparatus, the developing apparatus, the etching apparatus, etc. The substrate is transported intermittently whenever processing in the exposure apparatus, the developing apparatus, the etching apparatus, etc., is completed. Subsequently, a mask 50 is manufactured by processing a substrate. A plurality of masks 50 are manufactured from one substrate. For example, a plurality of masks 50 are manufactured from a substrate roll. In the following description, the substrate used to manufacture the mask 50 is referred to as the original substrate and is denoted by the symbol 55A. The method for manufacturing the mask 50 includes a first partial forming step and a second partial forming step. The first partial forming step involves forming the first through-hole group 53a, the outer edge of the first intermediate portion 52a, and the outer edge of the first end portion 51a on the original substrate 55A. The first partial forming step may also involve forming intermediate marks 58a and 58b on the first intermediate portion 52a and marks 58c and 58d on the first end portion 51a on the original substrate 55A. The second partial forming step involves forming the second through-hole group 53b, the outer edge of the second intermediate portion 52b, and the outer edge of the second end portion 51b on the original substrate 55A. The second partial forming step may also involve forming intermediate marks 58a and 58b on the second intermediate portion 52b and marks 58c and 58d on the second end portion 51b on the original substrate 55A. Part 1 of the formation steps includes a resist layer formation process, a first exposure process, a development process, an etching process, and a resist removal process. Part 2 of the formation steps includes a resist layer formation process, a second exposure process, a development process, an etching process, and a resist removal process. The resist layer formation process, development process, etching process, and resist removal process can also be common processes between Part 1 and Part 2. For example, the resist layer formation process can also involve simultaneously applying a resist layer to the area of ​​the original substrate 55A corresponding to Part 1 50A and Part 2 50B. That is, the resist layer formation process of Part 1 and the resist layer formation process of Part 2 can also be performed simultaneously. The development process, etching process, and resist removal process can also involve simultaneously processing the resist layer located in the area of ​​the original substrate 55A corresponding to Part 1 50A and Part 2 50B. That is, the development process of the first formation step and the development process of the second formation step can be performed simultaneously. Also, the etching process of the first formation step and the etching process of the second formation step can be performed simultaneously. Furthermore, the resist removal process of the first formation step and the resist removal process of the second formation step can also be performed simultaneously. The second exposure process of the second formation step is performed at a different time sequence than the first exposure process of the first formation step. After preparing the original substrate 55A, a resist layer formation process is performed. As shown in Figure 11, the resist layer formation process involves forming a resist layer on the surface of the original substrate 55. This yields a laminate comprising the original substrate 55 and the resist layer. The resist layer may also include a first resist layer 61 located on the first surface 551 and a second resist layer 62 located on the second surface 552. The resist layer may be formed by applying a solution containing a resist material to the surface of the original substrate 55A and allowing it to cure. Alternatively, the resist layer may be formed by attaching a film such as a dry film to the surface of the original substrate 55A. The coating-type resist layer is formed by applying a solution containing a photosensitive material to the surface of the original substrate 55A and then curing it. At this time, a resist layer calcination process can also be performed. The photosensitive material can be photosoluble (positive type) or photocurable (negative type). Examples of positive-type photosensitive materials include SC500 and other novolac-based positive resists, and examples of negative-type photosensitive materials include casein resists. The thickness of the resist layer may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The thickness of the resist layer may be, for example, 5 μm or less, 7 μm or less, or 10 μm or less. The range of the thickness of the resist layer may be determined by the first group including 1 μm, 2 μm, and 3 μm, and / or the second group including 5 μm, 7 μm, and 10 μm. The range of the thickness of the resist layer may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness of the resist layer may also be determined by a combination of any two of the values ​​included in the first group. The range of the thickness of the resist layer may also be determined by a combination of any two of the values ​​included in the second group. For example, the thickness of the resist layer may be 1 μm to 10 μm, 1 μm to 7 μm, 1 μm to 5 μm, 1 μm to 3 μm, 1 μm to 2 μm, 2 μm to 10 μm, 2 μm to 7 μm, 2 μm to 5 μm, 2 μm to 3 μm, 3 μm to 10 μm, 3 μm to 7 μm, 3 μm to 5 μm, 5 μm to 10 μm, 5 μm to 7 μm, or 7 μm to 10 μm. Next, the first exposure procedure is performed. As shown in Figures 12A and 12B, the first exposure procedure involves exposing the resist layer on the original substrate 55A using a first exposure mask. The first exposure mask exposes the resist layer located in the region corresponding to the first intermediate portion 52a and the first end portion 51a. That is, the first exposure mask exposes the resist layer corresponding to the first portion 50A. The first exposure mask may also include a first-side first exposure mask 711 for exposing the first resist layer 61 and a second-side first exposure mask 712 for exposing the second resist layer 62. As shown in Figure 12A, the first exposure mask may also be a rectangle comprising a first side and a second side. The first side may extend along the direction in which the original substrate 55A is transported. The second side may extend along a direction orthogonal to the direction in which the original substrate 55A is transported. The dimension of the first side is also referred to as the length and is denoted by the symbol Y1. The dimension of the second side is also referred to as the width and is denoted by the symbol W1. The transport direction of the original substrate 55A may be parallel to the first direction D1 of the mask 50. The width W1 of the first exposure mask can be greater than the width W0 of the original substrate 55A. The width W0 is the dimension of the original substrate 55A in the direction orthogonal to the direction in which the original substrate 55A is transported. Width W0 can be, for example, 100 mm or more, 200 mm or more, or 400 mm or more. Width W0 can be, for example, 600 mm or less, 800 mm or less, or 1000 mm or less. The range of width W0 can be determined by a first group including 100 mm, 200 mm, and 400 mm, and / or a second group including 600 mm, 800 mm, and 1000 mm. The range of width W0 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of width W0 can also be determined by a combination of any two of the values ​​included in the first group. The range of width W0 can also be determined by a combination of any two of the values ​​included in the second group. For example, the width W0 can be 100 mm to 1000 mm, or 100 mm to 800 mm, or 100 mm to 600 mm, or 100 mm to 400 mm, or 100 mm to 200 mm, or 200 mm to 1000 mm, or 200 mm to 800 mm, or 200 mm to 600 mm, or 200 mm to 400 mm, or 400 mm to 1000 mm, or 400 mm to 800 mm, or 400 mm to 600 mm, or 600 mm to 1000 mm, or 800 mm to 1000 mm. The width W1 of the first exposure mask can be, for example, 400 mm or more, 600 mm or more, 810 mm or more, or 1100 mm or more. The width W1 can also be less than 600 mm, less than 1000 mm, less than 1100 mm, or less than 1400 mm. The range of width W1 can be determined by a first group including 400 mm, 600 mm, 810 mm, and 1100 mm, and / or a second group including 600 mm, 1000 mm, 1100 mm, and 1400 mm. The range of width W1 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of width W1 can also be determined by a combination of any two of the values ​​included in the first group. The range of the width W1 can also be determined by a combination of any two of the values ​​included in the second group. For example, the width W1 can be 400 mm to 1400 mm, or 400 mm to 1100 mm, or 400 mm to 1000 mm, or 400 mm to 810 mm, or 400 mm to 600 mm, or 600 mm to 1400 mm, or 600 mm to 1100 mm, or 600 mm to 1000 mm, or 600 mm to 810 mm, or 810 mm to 1400 mm, or 810 mm to 1100 mm, or 810 mm to 1000 mm, or 1000 mm to 1400 mm, or 1000 mm to 1100 mm, or 1100 mm to 1400 mm. The first exposure mask has a length Y1. The length Y1 is the dimension of the first exposure mask in the direction of transporting the original substrate 55A. The length Y1 can be greater than or less than the width W1. The length Y1 can be less than the dimension M11 of the mask 50. The length Y1 corresponds to the dimension M15 of the first part 50A. The range of values ​​for the length Y1 can be the range of values ​​for the aforementioned dimension M15. As shown in FIG12B , in the first exposure process, the first-side first exposure mask 711 may be positioned facing the first resist layer 61, while the second-side first exposure mask 712 may be positioned facing the second resist layer 62. The first exposure process may also include a first position adjustment process for adjusting the relative position between the first-side first exposure mask 711 and the second-side first exposure mask 712. In the first position adjustment process, the position adjustment may be performed so that the alignment mark on the first-side first exposure mask 711 overlaps the alignment mark on the second-side first exposure mask 712. The first position adjustment process can suppress any deviation between the center of the first recess 561 and the center of the second recess 562 when viewed from above. As shown in FIG12A , the alignment mark ALM of the first exposure mask 711 on the first surface can also be positioned so as not to overlap with the original substrate 55A when viewed from above. Similarly, the alignment mark of the first exposure mask 712 on the second surface can also be positioned so as not to overlap with the original substrate 55A when viewed from above. Although not shown, the first position adjustment process can also be performed based on factors other than alignment marks. For example, the first position adjustment process can also be performed based on the positions of the outer edges of the first exposure mask 711 on the first surface and the first exposure mask 712 on the second surface. In the first position adjustment process, the position of either the first-side first exposure mask 711 or the second-side first exposure mask 712 can be adjusted. In the first position adjustment process, the positions of both the first-side first exposure mask 711 and the second-side first exposure mask 712 can also be adjusted. In the first position adjustment process, the position adjustment can be performed by moving the first-side first exposure mask 711 and / or the second-side first exposure mask 712 using a driving device. The first exposure process may also include a first position recording process for recording the position of the first exposure mask 711 on the first side and the position of the first exposure mask 712 on the second side. For example, the position of the first exposure mask 711 on the first side and the position of the first exposure mask 712 on the second side after adjustment by the first position adjustment process may be recorded. The position recorded by the first position recording process is also referred to as the first recorded position. For example, the first recorded position may be recorded as a coordinate in the coordinate system in which the drive device operates. Figures 13A and 13B are a top view and a cross-sectional view showing an example of a resist layer after exposure by a first exposure mask. The exposed first resist layer 61 includes a first predetermined removal portion 61a. The first predetermined removal portion 61a is the portion of the first resist layer 61 that is removed by development during the development process described below. In the states shown in Figures 13A and 13B, the first resist layer 61 has not yet been developed. When the first resist layer 61 contains a positive photosensitive material, the portion exposed to light becomes the first predetermined removal portion 61a. When the first resist layer 61 contains a negative photosensitive material, the portion not exposed to light becomes the first predetermined removal portion 61a, which will be removed during the development process described below. Similar to the first photoresist layer 61, the second photoresist layer 62 includes a second predetermined removal portion 62a. The second predetermined removal portion 62a is the portion of the second photoresist layer 62 that will be removed by development. When the second photoresist layer 62 contains a positive photosensitive material, the portion exposed to light becomes the second predetermined removal portion 62a. When the second photoresist layer 62 contains a negative photosensitive material, the portion not exposed to light becomes the second predetermined removal portion 62a and will be removed during the development process. As shown in Figure 13A, the first predetermined removal portion 61a generated by the first exposure process is located in the region of the first resist layer 61 corresponding to the outer edge of the first intermediate portion 52a, the outer edge of the first end portion 51a, the through hole 56, and the intermediate marks 58a, 58b and 58c, 58d. Although not shown, the second predetermined removal portion 62a generated by the first exposure process is also located in the region of the second resist layer 62 corresponding to the outer edge of the first intermediate portion 52a, the outer edge of the first end portion 51a, the through hole 56, and the intermediate marks 58a, 58b and 58c, 58d. Next, a second exposure procedure is performed. As shown in Figures 14A and 14B, the second exposure procedure involves exposing the resist layer on the original substrate 55A using a second exposure mask. The second exposure mask exposes the resist layer located in the region corresponding to the second middle portion 52b and the second end portion 51b. That is, the second exposure mask exposes the resist layer corresponding to the second portion 50B. The second exposure mask may also include a first-side second exposure mask 721 for exposing the first resist layer 61 and a second-side second exposure mask 722 for exposing the second resist layer 62. During the second exposure process, the second exposure mask can also be moved by a drive device to align the second exposure mask with respect to the original substrate 55A. The process of adjusting the position of the second exposure mask during the second exposure process is also referred to as the second position adjustment process. The drive device is configured to precisely adjust the position of the exposure mask. For example, the drive device may include a microactuator. Microactuators may include electrostatic actuators, electromagnetic actuators, piezoelectric actuators, thermal expansion actuators, and the like. In the second position adjustment process, the position of the second exposure mask can be adjusted using the position of the first exposure mask used in the first exposure process as a reference. For example, the position of the second exposure mask can be adjusted using the first recorded position of the first exposure mask recorded in the first position recording process as a reference. For example, the first recorded position, which is a coordinate in the coordinate system operated by the drive device, can also be used as a reference to move the first-side second exposure mask 721 and / or the second-side second exposure mask 722 using the drive device. By using the position of the first exposure mask as a reference, the relative position of the second exposure mask relative to the first exposure mask can be prevented from deviating from the ideal position. The second position adjustment process can, for example, reduce the dimension S1 of the first step 501a. The second position adjustment process can, for example, reduce the first angle θ1. The adjustment of the position of the second exposure mask based on the position of the first exposure mask is also called the first type of adjustment. During the second position adjustment process, the position of the second exposure mask can also be adjusted using the resist layers 61 and 62 corresponding to the first portion 50A after the first exposure process as a reference. In this case, the resist layers 61 and 62 corresponding to the first portion 50A after the first exposure process include a portion that can serve as a reference. This portion that can serve as a reference is also referred to as a reference portion. The reference portion can be a portion of the resist layers 61 and 62 that was irradiated with the exposure light during the first exposure process. Alternatively, the reference portion can be a portion of the resist layers 61 and 62 that was not irradiated with the exposure light during the first exposure process. The position of the first exposure mask in the first exposure process is reflected in the position of the reference portion of the resist layers 61 and 62. By using the reference portion of the resist layers 61 and 62 as a reference, as in the first adjustment case described above, the relative position of the second exposure mask with respect to the first exposure mask can be prevented from deviating from the ideal position. Adjusting the position of the second exposure mask using the reference portion of the resist layers 61 and 62 as a reference is also referred to as the second type of adjustment. In the second type of adjustment, the position of the first-side second exposure mask 721 can be adjusted using the reference portion of the first resist layer 61 as a reference. In the second type of adjustment, the position of the second-side second exposure mask 722 can also be adjusted using the reference portion of the second resist layer 62 as a reference. The reference portions of the resist layers 61 and 62 may be formed in regions of the resist layers 61 and 62 that do not overlap with the mask 50 in a plan view. The reference portions of the resist layers 61 and 62 can be formed in the resist layers 61 and 62 by bringing a portion of the first exposure mask into contact with the resist layers 61 and 62 during the first exposure process. For example, the first exposure mask may include protrusions that protrude in the thickness direction toward the resist layers 61 and 62. In this case, by bringing the protrusions of the first exposure mask into contact with the resist layers 61 and 62 during the first exposure process, a portion of the resist layers 61 and 62 is deformed, thereby forming the reference portions in the resist layers 61 and 62. The reference portion of the resist layers 61 and 62 can also be formed in the resist layers 61 and 62 by processing a portion of the resist layers 61 and 62 using laser light in the first exposure process. For example, the first exposure mask can also include a transparent portion that partially transmits the laser light. For example, the first exposure mask can also include a shielding layer that is located in an area that does not overlap with the mask 50 when viewed from above and blocks the laser light, and an opening formed in the shielding layer. In this case, in the first exposure process, laser light can be irradiated toward the transparent portion of the first exposure mask. By allowing the laser light that passes through the opening of the transparent portion of the first exposure mask to reach the resist layers 61 and 62 in the first exposure process and processing a portion of the resist layers 61 and 62, the reference portion is formed in the resist layers 61 and 62. In the second position adjustment process, the relative position between the first-side second exposure mask 721 and the second-side second exposure mask 722 can be adjusted. For example, in the second position adjustment process, the position adjustment can be performed so that the alignment mark on the first-side second exposure mask 721 overlaps the alignment mark on the second-side second exposure mask 722. The relative position between the first-side second exposure mask 721 and the second-side second exposure mask 722 is also referred to as the third type of adjustment. In the second position adjustment procedure, the first, second, and third adjustments mentioned above can be implemented in any combination. For example, the first or second adjustment can be implemented first, and then the third adjustment can be implemented. For example, the position of the first surface second exposure mask 721 can be adjusted by the first adjustment or the second adjustment, and then the relative position of the second surface second exposure mask 722 relative to the first surface second exposure mask 721 can be adjusted by the third adjustment. For example, the position of the second exposure mask 722 on the second side can be adjusted by the first adjustment or the second adjustment, and then the relative position of the second exposure mask 721 on the first side relative to the second exposure mask 722 on the second side can be adjusted by the third adjustment. Figures 15A and 15B are a top view and a cross-sectional view of an example of a resist layer after exposure using a second exposure mask. As shown in Figure 15A , the first portion to be removed 61a produced by the second exposure process is located in the region of the first resist layer 61 corresponding to the outer edge of the second intermediate portion 52b, the outer edge of the second end portion 51b, the through-hole 56, the intermediate marks 58a and 58b, and the marks 58c and 58d. Although not shown, the second portion to be removed 62a produced by the second exposure process is located in the region of the second resist layer 62 corresponding to the outer edge of the second intermediate portion 52b, the outer edge of the second end portion 51b, the through-hole 56, the intermediate marks 58a and 58b, and the marks 58c and 58d. Next, a development process is performed. Herein, the first predetermined removal portion 61a and the second predetermined removal portion 62a are removed. Next, an etching process is performed. The etching process uses the exposed and developed first resist layer 61 and second resist layer 62 to etch the original substrate 55. The etching process may also include a first-surface etching process for etching the first surface 551 and a second-surface etching process for etching the second surface 552. For example, a ferric chloride solution or a liquid containing hydrochloric acid can be used as the etching solution. FIG16 is a cross-sectional view showing an example of the original substrate 55 after etching. The first surface etching process forms a first recess 561 and a third recess 571 (not shown) on the first surface 551. The second surface etching process forms a second recess 562 and a fourth recess 572 (not shown) on the second surface 552. The first recess 561 and the second recess 562 are connected to form a through hole 56. The third recess 571 and the fourth recess 572 are connected to form a through hole. The through hole formed by the third recess 571 and the fourth recess 572 and defining the outer edge of the mask 50 is also referred to as an outer edge hole. Although not shown, the first intermediate mark 58a, the second intermediate mark 58b, the first mark 58c, and the second mark 58d are also formed by the etching process. As shown in Figure 16, resin 65 can also be filled into the first recess 561 and the third recess 571 (not shown) after the first side etching process and before the second side etching process. Next, a resist layer removal process is performed. This removes the first resist layer 61 and the second resist layer 62. Furthermore, a resin 65 removal process is performed. The resin 65 can also be removed simultaneously with the first resist layer 61 and the second resist layer 62. Figures 17A and 17B are a top view and a cross-sectional view of the original substrate 55A after the first resist layer 61 and the second resist layer 62 have been removed. The original substrate 55A has a group of through holes 53 including through holes 56, outer edge holes dividing the outer edge of the mask 50, and markings 58a, 58b, 58c, and 58d. The outer edge hole dividing the outer edge of the first end 51a is also referred to as the second outer edge hole and is indicated by the symbol 592. The outer edge hole dividing the outer edge of the middle portion 52 is also referred to as the first outer edge hole and is indicated by the symbol 591. The outer edge hole dividing the outer edge of the second end 51b is also referred to as the third outer edge hole and is indicated by the symbol 593. As shown in Figure 17A, a bridge 595 may also be connected to the outer edge of the shield 50. In the example shown in Figure 17A, the bridge 595 connects the first end 503 and the second end 504. The bridge 595 is a portion that traverses the original substrate 55A through the outer edge hole. The bridge 595 connects the outer edge of the mask 50 to the surrounding original substrate 55A. By providing the bridge 595, the mask 50 can be prevented from detaching from the original substrate 55A. By breaking the bridge 595, the mask 50 can be pulled out from the original substrate 55A. In this embodiment, as described above, the resist layer corresponding to the first intermediate portion 52a of the intermediate portion 52 is exposed using a first exposure mask. Furthermore, the resist layer corresponding to the second intermediate portion 52b of the intermediate portion 52 is exposed using a second exposure mask, which is different from the first exposure mask. Therefore, compared to the case where a single exposure mask is used to form the entire mask 50, the size M12 of the intermediate portion 52 can be increased. Thus, both an readily available exposure mask is used, and the size M11 of the mask 50 can be increased. That is, investment in the manufacturing equipment of the mask 50 is reduced, and the size M11 of the mask 50 can be increased. However, sometimes the relative position of the second exposure mask with respect to the first exposure mask may deviate from the ideal. Therefore, the first arrangement direction of the through holes 56 in the first through hole group 53a may deviate from the second arrangement direction of the through holes 56 in the second through hole group 53b. The manufacturing method of the mask 50 may also include a screening step based on the first angle θ1 mentioned above. The first angle θ1 represents the deviation of the first arrangement direction from the second arrangement direction. The screening step, for example, is to screen masks 50 with a first angle θ1 below a threshold as good products. The threshold may be, for example, 0.00042°, 0.00063°, 0.00084°, 0.00105°, 0.00125°, 0.00167°, or 0.00209°. The method for manufacturing the mask 50 may also include a screening step of screening the mask 50 based on the dimension S1 of the first step 501a of the first side edge 501. The method for manufacturing the mask 50 may also include a screening step of screening the mask 50 based on the distance G1. The method for manufacturing the mask 50 may also include a screening step of screening the mask 50 based on the distance G3. The screening step, for example, selects masks 50 having dimension S1, distance G1, or distance G3 below a threshold as good products. The thresholds for dimension S1, distance G1, and distance G3 may be, for example, 0.1 μm, 0.2 μm, 0.5 μm, 1.0 μm, 1.5 μm, 2.0 μm, 2.5 μm, or 3.0 μm. Next, a method for manufacturing the mask device 15 will be described. First, prepare the frame 41. Then, an alignment process is performed to determine the position of the mask 50 relative to the frame 41. In the alignment process, tension can be applied to the mask 50 while the position of the mask 50 is determined. For example, as shown in FIG18 , a clamp can be used to apply tension to the mask 50. The clamp includes, for example, a first clamp 81 mounted on the first end 51a, and a second clamp 82 mounted on the second end 51b. The first clamp 81 is mounted on the portion of the first end 503 where the recess 505 is not formed. For example, as shown in FIG18 , when a recess 505 is formed on the first end 503, two first clamps 81 can be mounted on the portion of the first end 503 where the recess 505 is not formed. When two or more recesses 505 are formed at the first end 503, three or more first clamps 81 can be installed on the portion of the first end 503 where no recesses 505 are formed. The number of recesses 506 formed at the second end 504 may be the same as the number of recesses 505 formed at the first end 503. The number of second clamps 82 mounted at the second end 51b may be the same as the number of first clamps 81 mounted at the first end 51a. During the alignment process, a camera or similar device can be used to photograph the mask 50 under tension. Based on the photographed image, the position of the mask 50 relative to the frame 41 is detected. FIG19 is a top view of an example of a mask 50 under applied tension T. The mask 50 may also include a plurality of reference holes. The reference holes serve as indicators for the position of the mask 50 during the alignment process. The reference holes may be formed by through-holes 56 of the through-hole group 53. The positions of the reference holes are detected based on the captured image. Multiple reference holes can be set at various positions of the mask 50 in the first direction D1 and the second direction D2. For example, part 50A may include at least one first outer reference hole. The first outer reference hole is formed by the through hole of the first through hole group that is farthest from the second through hole group 53b in the first direction D1. In the example shown in FIG19, the first through hole group that is farthest from the second through hole group 53b in the first direction D1 is represented by the symbol 53a2. In the example shown in FIG19, through holes marked with symbols A01, B01, C01, etc. constitute the first outer reference hole. For example, part 50A may include at least one first inner reference hole. The first inner reference hole is formed by the through holes of the first through hole group adjacent to the second through hole group 53b in the first direction D1. In the example shown in FIG19, the first through hole group adjacent to the second through hole group 53b in the first direction D1 is represented by the symbol 53a1. In the example shown in FIG19, the through hole marked with the symbol B18 constitutes the first inner reference hole. For example, part 50B may include at least one second outer reference hole. The second outer reference hole is formed by the through hole of the second through hole group that is farthest from the first through hole group 53a in the first direction D1. In the example shown in FIG19, the second through hole group that is farthest from the first through hole group 53a in the first direction D1 is represented by the symbol 53b2. In the example shown in FIG19, through holes marked with symbols A36, B36, C36, etc., constitute the second outer reference hole. For example, part 50B may include at least one second inner reference hole. The second inner reference hole is formed by the through holes of the second through hole group adjacent to the first through hole group 53a in the first direction D1. In the example shown in FIG19, the second through hole group adjacent to the first through hole group 53a in the first direction D1 is indicated by the symbol 53b1. In the example shown in FIG19, the through holes marked with the symbol B19 constitute the second inner reference hole. In the example shown in Figure 19, the mask 50 includes reference holes A01-A36, B01-B36, and C01-C36. Reference holes A01-A36 are partially formed by a plurality of through holes 56 arranged along the first side edge 501 from the first end 503 toward the second end 504. Reference holes C01-C36 are partially formed by a plurality of through holes 56 arranged along the second side edge 502 from the first end 503 toward the second end 504. Reference holes B01-B36 are formed by through holes 56 located in the second direction D2, between reference holes A01-A36 and reference holes C01-C36. Reference hole A01 is formed by a through hole 56 belonging to the first through hole group 53a2, which is closest to the first side edge 501 and the first end 503. Reference hole C01 is formed by a through hole 56 belonging to the first through hole group 53a2, which is closest to the second side edge 502 and the first end 503. Reference hole B01 is formed by a through hole 56 located between reference hole A01 and reference hole C01. Reference hole B18 is formed by a through hole 56 belonging to the first through hole group 53a1, which is closest to the second part 50B and overlaps with reference hole B01 when viewed along the first arrangement direction. Reference hole A36 is formed by a through hole 56 belonging to the second through hole group 53b2, which is closest to the first side edge 501 and the second end 504. Reference hole C36 is formed by a through hole 56 belonging to the second through hole group 53b2, which is closest to the second side edge 502 and the second end 504. Reference hole B36 is formed by a through hole 56 located between reference hole A36 and reference hole C36. Reference hole B19 is formed by a through hole 56 belonging to the second through hole group 53b1, which is closest to the first part 50A and overlaps with reference hole B36 when viewed along the second arrangement direction. In the example shown in FIG19 , reference line LA indicates the ideal positions of reference holes A01-A36 in the second direction D2. Reference line LB indicates the ideal positions of reference holes B01-B36 in the second direction D2. Reference line LC indicates the ideal positions of reference holes C01-C36 in the second direction D2. Reference lines LA-LC are determined based on the reference coordinate system of frame 41 and the designed positions of through-holes 56 in mask 50. In this embodiment, as described above, the first arrangement direction of the first through-hole group 53a deviates from the second arrangement direction of the second through-hole group 53b. In this case, if a tension T is applied to the shield 50, the deviation distance of the first outer reference hole or the second outer reference hole increases. The deviation distance refers to the distance between the reference hole and the reference line in the second direction D2. In the example shown in FIG19, the deviation distance Δ2-2 of the reference holes A36, B36, and C36 constituting the second outer reference hole is greater than the deviation distance of the other reference holes A01~A35, B01~B35, and C01~C35. The alignment process may also include an adjustment process for adjusting the tension T applied to the mask 50. The adjustment process may include, for example, adjusting the magnitude of the tension. The adjustment process may also include, for example, adjusting the direction of the tension. Figure 20 is a top view showing an example of a mask 50 with an adjusted tension T applied. In the example shown in Figure 20, the tension T is adjusted in the second direction D2 so that the deviation distances of both the first outer reference hole and the second outer reference hole are below a first adjustment threshold. The first adjustment threshold may be, for example, 1.0 μm, or 0.5 μm, or 0.3 μm, or 0.2 μm, or 0.1 μm. If tension T is adjusted with a focus on the first and second outer reference holes, the offset distances between the first and second outer reference holes will become smaller than the offset distances of the other reference holes. In this case, the offset distances between the first and second inner reference holes will become larger than the offset distances of the other reference holes. In the example shown in Figure 19, the offset distance Δ1-1 of reference hole B18, which constitutes the first inner reference hole, is larger than the offset distances of the other reference holes B01 to B17 located in the first portion 50A. Furthermore, the offset distance Δ2-1 of reference hole B19, which constitutes the second inner reference hole, is larger than the offset distances of the other reference holes B20 to B36 located in the second portion 50B. The alignment process may also include a shifting process of moving the mask 50 in the second direction D2. The shifting process involves moving the mask 50 in the second direction D2 so that the offset distance of the first outer reference hole, the offset distance of the first inner reference hole, and the offset distance of the second outer reference hole are all below a second adjustment threshold. The shifting process may also involve moving the mask 50 in the second direction D2 so that the offset distance of the first outer reference hole, the offset distance of the first inner reference hole, the offset distance of the second inner reference hole, and the offset distance of the second outer reference hole are all below a second adjustment threshold. The shifting process may be performed after the adjustment process. FIG21 is a top view of an example of mask 50 after a shifting process. In the example shown in FIG21 , the shifting process moves mask 50 in the second direction D2 so that the offset distance Δ1-2 of the first outer reference hole, the offset distance Δ1-1 of the first inner reference hole, the offset distance Δ2-2 of the second inner reference hole, and the offset distance Δ2-1 of the second outer reference hole are all below the second adjustment threshold. This allows the offset distances of all reference holes to be evenly reduced. Therefore, the PPA of an organic device fabricated using mask 50 can be improved. The second adjustment threshold can be, for example, 5.0 μm, 4.0 μm, 3.0 μm, 2.0 μm, or 1.0 μm. The shifting step may also involve moving the mask 50 in the second direction D2 so that the difference between the offset distance Δ1-2 of the first outer reference hole and the offset distance Δ1-1 of the first inner reference hole is less than a third adjustment threshold. This further reduces the maximum offset distance Δmax of all reference holes. The third adjustment threshold may be, for example, 1.0 μm, 0.5 μm, 0.3 μm, 0.2 μm, or 0.1 μm. Various modifications may be made to the above-described embodiment. Other embodiments will be described below with reference to the accompanying drawings, as needed. In the following description and the accompanying drawings, components that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for corresponding components in the above-described embodiment. Duplicated descriptions will be omitted. Furthermore, where it is clear that the effects achieved in the above-described embodiment can also be achieved in other embodiments, their description will be omitted. The second embodiment will be described. In the above embodiment, an example was shown where the boundary line BL between the first part 50A and the second part 50B was determined based on the first step 501a, distance G1, or distance G3. That is, an example was shown where the boundary line BL was determined based on the deviation between the position of the first part 50A and the position of the second part 50B in the second direction D2. In the second embodiment, an example was described where the boundary line BL was determined based on the center C1 of the mask 50. The center C1 of the mask 50 is located between the boundary line BL1 and the boundary line BL2. When the center C1 is between two adjacent through-hole groups 53 in the first direction D1, the boundary line BL can also be defined as a straight line passing through the center C1 and extending along the second direction D2. The two through-hole groups 53 adjacent to the center C1 are defined as the first through-hole group 53a1 and the second through-hole group 53b1. When the center C1 overlaps with one through-hole group 53 (also referred to as the center through-hole group 53), the center through-hole group 53 is defined as the first through-hole group 53a1 or the second through-hole group 53b1. When the through-hole group 53 that is second closest to the center C1 after the center through-hole group 53 is located on the first end 503 side relative to the center through-hole group 53, the through-hole group 53 is defined as the first through-hole group 53a1, and the center through-hole group 53 is defined as the second through-hole group 53b1. When the through-hole group 53 that is second closest to the center C1 after the center through-hole group 53 is located on the second end 504 side relative to the center through-hole group 53, the through-hole group 53 is defined as the second through-hole group 53b1, and the center through-hole group 53 is defined as the first through-hole group 53a1. [Example] Next, the embodiments of the present invention will be described in more detail with reference to examples. However, the embodiments of the present invention are not limited to the description of the following examples unless they exceed the gist of the present invention. (Example 1) As shown in Figure 22A, a mask 50 is designed, comprising a first part 50A and a second part 50B. The design values ​​for the dimensions of the mask 50 are as follows: ・Dimension M11 of the mask 50 in the first direction D1: 2580 mm ・Dimension M12 of the middle part 52 in the first direction D1: 2085 mm ・Dimension of the middle part 52 in the second direction D2: 227 mm ・Dimension of the first end 51a in the second direction D2: 230 mm ・Dimension of the second end 51b in the second direction D2: 230 mm ・First angle: 0.00125° ・Dimension of the first step 501a in the second direction D2: 0.0 μm ・Thickness of the mask 50: 20 μm The positions of reference holes A01-A36, B01-B36, and C01-C36 of mask 50 in a tension-free state were calculated through simulation. The results are shown in Figure 22B . The horizontal axis represents the position in the first direction D1, and the vertical axis represents the position in the second direction D2. The offset distance of the first outer reference holes, such as reference hole B01, is 0.0 μm. The offset distance of the second outer reference holes, such as reference hole B36, is 22.5 μm. Next, simulations were performed to calculate the positions of reference holes A01-A36, B01-B36, and C01-C36 of mask 50 under a tension of 25 N. The results are shown in Figure 23. The offset distance of the second outer reference holes, including reference hole B36, was 22.6 μm. Next, an adjustment process was implemented by simulating the tension adjustment to align the positions of the first outer reference hole and the second outer reference hole. Furthermore, the positions of reference holes A01–A36, B01–B36, and C01–C36 after the adjustment process were calculated using simulation. The results are shown in Figure 24. The deviation distances of both the first and second outer reference holes were 0.0 μm. The deviation distances of both the first and second inner reference holes were 6.0 μm. Next, a displacement process was simulated to move the mask 50 in the second direction D2. The positions of the reference holes B01 to B36 after the displacement process were calculated using simulation. The results are shown in Figure 25. In Figure 25, the reference holes after the displacement process are represented by the symbols B01' to B36'. The deviation distances Δ1-2 of the first outer reference hole, Δ1-1 of the first inner reference hole, Δ2-2 of the second inner reference hole, and Δ2-1 of the second outer reference hole are all 3.0 μm. Therefore, as shown in Figure 26, the maximum deviation distance Δmax of all reference holes is 3.0 μm. (Example 2) Mask 50, including first portion 50A and second portion 50B, was designed in the same manner as in Example 1, except that the first angle was set to 0.00084°. Then, similarly to Example 1, the positions of reference holes B01-B36 after the adjustment and shifting steps were calculated through simulation. As shown in Figure 26, the maximum deviation distance Δmax for all reference holes was 2.0 μm. (Example 3) Mask 50, including first portion 50A and second portion 50B, was designed in the same manner as in Example 1, except that the first angle was set to 0.00042°. Then, similarly to Example 1, the positions of reference holes B01-B36 after the adjustment and shifting steps were calculated through simulation. As shown in Figure 26, the maximum deviation distance Δmax for all reference holes was 1.0 μm. (Example 4) A mask 50 having a first portion 50A and a second portion 50B was designed in the same manner as in Example 1, except that the first angle was set to 0.00167°. Then, similarly to Example 1, the positions of the reference holes B01 to B36 after the adjustment and shifting steps were calculated through simulation. As shown in Figure 26 , the maximum deviation distance Δmax for all reference holes was 4.0 μm. (Example 5) A mask 50 having a first portion 50A and a second portion 50B was designed in the same manner as in Example 1, except that the first angle was set to 0.00209°. Then, similarly to Example 1, the positions of the reference holes B01 to B36 after the adjustment and shifting steps were calculated through simulation. As shown in Figure 26 , the maximum deviation distance Δmax for all reference holes was 5.0 μm. The slope of Δmax relative to the first angle θ1, calculated based on Examples 1 to 5, is 4820 [μm / °]. 2: Substrate holder 3: Mask holder 4: Cooling plate 5: Magnet 6: Evaporation source 7: Evaporation material 8: Heater 10: Evaporation device 15: Mask device 40: Mask support 41: Frame 43: Opening 50: Mask 50A: First part 50B: Second part 51a: First end 51b: Second end 52: Middle part 52a: First middle part 52b: Second middle part 53: Through-hole group 53a: First through-hole group 53a1: First through-hole group 53a2: First through-hole group 53b: Second through-hole group 53b1: Second through-hole group 53b2: Second through-hole group 55A: Original substrate 56: Through hole 58a: First intermediate mark 58b: Second intermediate mark 58c: First mark 58d: Second mark 61: First resist layer 61a: First portion to be removed 62: Second resist layer 62a: Second portion to be removed 81: First fixture 82: Second fixture 100: Organic device 102: Organic device group 103: Device area 110: Substrate 111: First surface 112: Second surface 115: Element 115A: First element 115B: Second element 120: First electrode 130: Organic layer 130A: First organic layer 130B: Second organic layer 140: Second electrode 140A: First layer 140B: Second layer 160: Insulating layer 411: First side 412: Second side 501: First side edge 502: Second side edge 503: First end 504: Second end 505: Recess 506: Recess 507: Corner 551: First surface 552: Second surface 561: First recess 562: Second recess 563: Connecting portion 571: Third recess 572: Fourth recess 591: First outer edge hole 592: Second outer edge hole 593: Third outer edge hole 595: Bridge A1: Dimensions of the organic device A2: Dimensions of the organic device A01 to A36 : Reference hole BL1: Boundary line BL2: Boundary lines B01-B36: Reference hole C1: Center of mask C01-C36: Reference hole D1: 1st direction D2: 2nd direction G11: Substrate size G12: Device area size G21: Substrate size G22: Device area size LA: Reference line LB: Reference line LC: Reference line M11: Mask size M12: Middle size Δ1-1: Deviation distance of the first inner reference hole Δ1-2: Deviation distance of the first outer reference hole Δ2-1: Deviation distance of the second outer reference hole Δ2-2: Deviation distance of the second inner reference hole Figure 1 is a cross-sectional view showing an example of an organic device. Figure 2 is a top view showing an example of an organic device group. Figure 3 is a cross-sectional view showing an example of a vapor deposition apparatus. Figure 4 is a top view showing an example of a masking apparatus. Figure 5 is a top view showing an example of a mask. Figure 6 is a top view showing an example of the first end of a mask. Figure 7A is a top view showing an example of the first and second intermediate portions. Figure 7B is a diagram showing an example of the relationship between the first and second arrangement directions. Figure 7C is a diagram showing an example of the relationship between the first and second arrangement directions. Figure 8 is a top view showing an example of the first and second intermediate portions. Figure 9 is a top view showing an example of the first and second intermediate portions. Figure 10 is a cross-sectional view of the mask in Figure 5 viewed from direction AA. Figure 11 is a cross-sectional view showing the substrate used to manufacture the mask. Figure 12A is a top view showing an example of a process for exposing a resist layer using a first exposure mask. Figure 12B is a cross-sectional view of the substrate of Figure 12A viewed from the BB direction. Figure 13A is a top view showing an example of a resist layer after exposure by the first exposure mask. Figure 13B is a cross-sectional view of the substrate of Figure 13A viewed from the CC direction. Figure 14A is a top view showing an example of a process for exposing the resist layer using the second exposure mask. Figure 14B is a cross-sectional view of the substrate of Figure 14A viewed from the DD direction. Figure 15A is a top view showing an example of a resist layer after exposure by the second exposure mask. Figure 15B is a cross-sectional view of the substrate of Figure 15A viewed from the EE direction. Figure 16 is a cross-sectional view showing an example of a substrate after etching. Figure 17A is a top view showing an example of a mask formed on a substrate. Figure 17B is a cross-sectional view of the substrate of Figure 17A viewed from the FF direction. Figure 18 is a top view showing an example of an alignment process for determining the position of the mask relative to the mask support. Figure 19 is a top view showing an example of a shield under applied tension. Figure 20 is a top view showing an example of an adjustment process. Figure 21 is a top view showing an example of a shifting process. Figure 22A is a top view showing the shield of Example 1. Figure 22B is a graph showing the deviation distance of the through hole of the shield of Example 1. Figure 23 is a graph showing the deviation distance of the shield of Example 1 under applied tension. Figure 24 is a graph showing the deviation distance of the through hole of the shield of Example 1 after the adjustment process. Figure 25 is a graph showing the deviation distance of the through hole of the shield of Example 1 after the shifting process. Figure 26 is a table showing the maximum deviation distances in Examples 1 to 5. 50A: Part 1 50B: Part 2 51a: 1st end 51b: Second end 52a: 1st middle part 52b: Second Middle Section 55A: Original substrate 61: First resist layer 61a: 1st removal of predetermined portion D1: Direction 1 D2: Direction 2

Claims

1. A method for manufacturing a mask, wherein the mask comprises a first portion including at least one first group of through holes, and a second portion including at least one second group of through holes adjacent to the first group of through holes in a first direction, wherein a first angle θ1 formed by the first arrangement direction of the first group of through holes and the second arrangement direction of the second group of through holes is 0.00042° or more, wherein the first arrangement direction is the arrangement direction of through holes belonging to the first group of through holes and arranged along a first side edge of the mask, wherein the first side edge extends along the first direction, and wherein the second arrangement direction is the arrangement direction of through holes belonging to the second group of through holes and arranged along the first side edge, wherein the manufacturing method comprises: a step of preparing a laminate having an original substrate and a resist layer; and a first exposure process of exposing the resist layer corresponding to the first portion using a first exposure photomask. A second exposure process involving exposing the resist layer corresponding to the second part using a second exposure mask; a process involving developing the resist layer corresponding to the first part and the resist layer corresponding to the second part; and a process involving etching the original substrate through the resist layer corresponding to the first part and the resist layer corresponding to the second part; the first exposure mask includes a first-side first exposure mask for exposing the resist layer on the first surface of the original substrate, and a second-side first exposure mask for exposing the resist layer on the second surface of the original substrate. In the first exposure process, the resist layer on the first surface is exposed by the first-side first exposure mask, and the resist layer on the second surface is exposed by the second-side first exposure mask. The second exposure mask includes a first-side second exposure mask for exposing the resist layer on the first surface and a second-side second exposure mask for exposing the resist layer on the second surface. In the second exposure process, the resist layer on the first surface is exposed by the first-side second exposure mask, and the resist layer on the second surface is exposed by the second-side second exposure mask. By etching through the resist layer corresponding to the first portion, the outer edge of the first portion and the first through-hole group are formed on the original substrate. By etching through the resist layer corresponding to the second portion, the outer edge of the second portion and the second through-hole group are formed on the original substrate.

2. The method for manufacturing the mask as claimed in claim 1, wherein the first exposure mask has a rectangle including a first side and a second side, wherein the first side is 1090 mm or more and the second side is 810 mm or more.

3. The method for manufacturing the mask as claimed in claim 1, wherein the thickness of the original substrate is 30 μm or more.

4. The method for manufacturing a mask as claimed in any of claims 1 to 3, wherein the second exposure procedure includes a procedure for adjusting the position of the second exposure mask based on the resist layer corresponding to the first part of the above-mentioned after the first exposure procedure is performed.

5. The method for manufacturing a mask as claimed in any of claims 1 to 3, wherein the second exposure procedure includes a procedure for adjusting the position of the second exposure mask based on the position of the first exposure mask used in the first exposure procedure.

6. The method for manufacturing a mask as claimed in any of claims 1 to 3, wherein the first exposure procedure includes a procedure for adjusting the relative position between the first exposure mask on the first surface and the first exposure mask on the second surface, and the second exposure procedure includes a procedure for adjusting the relative position between the second exposure mask on the first surface and the second exposure mask on the second surface.

7. A mask comprising: a substrate including a first side edge and a second side edge extending along a first direction, and including a first surface and a second surface; and a plurality of through-hole groups, all penetrating the substrate; and, in a top view, the mask comprising a first portion of at least one first through-hole group including the through-hole groups, and a second portion of at least one second through-hole group adjacent to the first through-hole group in the first direction, wherein a first angle θ1 formed by the first arrangement direction of the first through-hole group and the second arrangement direction of the second through-hole group is 0.00042° or more, the first arrangement direction being the arrangement direction of through-holes in the first through-hole group arranged along the first side edge, and the second arrangement direction being the arrangement direction of through-holes in the second through-hole group arranged along the first side edge.

8. The mask as claimed in claim 7, wherein, in top view, the mask has a middle portion comprising a plurality of the aforementioned through-hole groups arranged in the first direction, and the size of the middle portion in the first direction is more than 1000 mm and less than 2200 mm.

9. The mask as claimed in claim 7 or 8, wherein the first side edge includes a first step located at the junction of the first part and the second part, and displaced in a second direction orthogonal to the first direction.

10. The mask as claimed in claim 9, wherein the size S1 of the first step portion is 3.0 μm or less.

11. The masking as requested in claim 10, wherein the first angle θ1 is less than or equal to 0.00125°.

12. As claimed in claim 9, the following relationship holds between the dimension S1 of the first step and the first angle θ1: 4820[μm / °]×θ1[°]+S1[μm]≦6.0[μm].

13. The masking as requested in item 7 or 8, wherein the size of the first portion in the first direction is 900 mm or more, and the size of the second portion in the first direction is 900 mm or more.

14. The mask as claimed in claim 7 or 8, wherein the first portion includes a first end that constitutes an end of the mask in the first direction; and the second portion includes a second end that constitutes an end of the mask in the first direction.

15. The mask as claimed in claim 14, wherein, in top view, the first end and the second end are each contained in two or more recesses arranged in a second direction orthogonal to the first direction.

16. The mask as claimed in claim 15, wherein the recess has a dimension of 5 mm or more in the first direction.

17. A method of manufacturing a masking device, comprising: an alignment step in which tension is applied to a mask as claimed in claim 7 while determining the position of the mask relative to a frame; and a fixing step in which the mask is fixed to the frame; wherein the first portion comprises: a first inner reference hole formed by through holes of the first through hole group adjacent to the second through hole group in the first direction; and a first outer reference hole formed by through holes of the first through hole group furthest from the second through hole group in the first direction; the second portion comprises a second outer reference hole formed by through holes of the second through hole group furthest from the first through hole group in the first direction; the alignment step comprises: The adjustment process involves adjusting the tension based on the first outer reference hole and the second outer reference hole; and the shifting process involves moving the shield in a second direction orthogonal to the first direction based on the first inner reference hole after the adjustment process.

18. A method for manufacturing the shielding device as claimed in claim 17, wherein the adjustment step is to adjust the tension so that, in the second direction, both the deviation distance of the first outer reference hole and the deviation distance of the second outer reference hole become the first adjustment threshold.

19. A method for manufacturing a masking device as claimed in claim 18, wherein the shifting step involves moving the mask in the second direction such that the deviation distance of the first outer reference hole, the deviation distance of the first inner reference hole, and the deviation distance of the second outer reference hole all become below a second adjustment threshold in the second direction.

20. A method for manufacturing a masking device as claimed in claim 19, wherein the shifting step involves moving the mask in the second direction so that the difference between the deviation distance of the first outer reference hole and the deviation distance of the first inner reference hole becomes a third adjustment threshold or less.

21. A method for manufacturing a shielding device as claimed in any of claims 17 to 20, wherein the size of the frame in the second direction is 1200 mm or more.

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