Substrate processing apparatus and substrate processing method

Abstract

According to one aspect of the present invention, a substrate processing apparatus includes: a processing container for housing a plurality of substrates arranged in multiple layers; a processing gas supply pipe extending along the arrangement direction of the plurality of substrates to supply processing gas into the processing container; and a pair of inert gas supply pipes disposed at a position that surrounds the processing gas supply pipes along the circumference of the substrates and extends along the arrangement direction to supply inert gas into the processing container; the pair of inert gas supply pipes spray the inert gas toward the inner surface of the sidewall of the processing container.

Description

Substrate processing device and substrate processing method The present invention relates to a substrate processing device and a substrate processing method. In a vertical heat treatment apparatus, it is known to arrange a pair of inert gas supply nozzles along the circumference of a substrate so as to sandwich the process gas supply nozzle from both sides (for example, see Patent Document 1). [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-206489 [Problems to be solved by the invention] The present invention aims to provide a technology for improving the uniformity of processing. [Solution to the Problem] One aspect of the present invention provides a substrate processing apparatus comprising: a processing container for accommodating a plurality of substrates arranged in multiple layers; a processing gas supply pipe extending along the arrangement direction of the plurality of substrates to supply processing gas into the processing container; and a pair of inert gas supply pipes disposed at positions sandwiching the processing gas supply pipes along the circumference of the substrates and extending along the arrangement direction to supply inert gas into the processing container; the pair of inert gas supply pipes spraying the inert gas toward the inner surface of the sidewall of the processing container. [Effects of the Invention] According to the present invention, the uniformity of processing can be improved. Hereinafter, non-limiting exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In the accompanying drawings, identical or corresponding components or elements are given identical or corresponding reference numerals and repeated descriptions are omitted. [First Embodiment] A substrate processing apparatus 1 according to a first embodiment will be described with reference to Figures 1 to 7. As shown in Figure 1 , the substrate processing apparatus 1 is a batch apparatus that simultaneously processes a plurality (e.g., 5 to 100) of substrates W. The substrates W may be, for example, semiconductor wafers. The substrate processing apparatus 1 includes a processing container 10 , a gas supply unit 30 , an exhaust unit 40 , a heating unit 50 , and a control unit 90 . The interior of the processing container 10 can be depressurized. The processing container 10 accommodates a plurality of substrates W arranged in multiple layers along a vertical direction. The processing container 10 comprises an inner tube 11 and an outer tube 12. The inner tube 11 is cylindrical with a ceiling and an open lower end. The outer tube 12 is cylindrical with a ceiling and an open lower end, covering the outside of the inner tube 11. The inner tube 11 and the outer tube 12 have a coaxial double-tube structure. The inner tube 11 and the outer tube 12 are formed, for example, from quartz. 2 , the inner tube 11 includes a first side wall 11a, a second side wall 11b, a third side wall 11c, and a fourth side wall 11d. The first side wall 11a, the second side wall 11b, the third side wall 11c, and the fourth side wall 11d are formed integrally, for example. The first side wall 11a extends along the circumference of the substrate W. The first side wall 11a has an arc shape in a cross section perpendicular to the arrangement direction of the plurality of substrates W, that is, in a horizontal cross section. A rectangular exhaust slit 15 is formed along a portion of the circumference of the first side wall 11a along its long side direction (vertical direction). The gas in the inner tube 11 is discharged into the space P1 between the inner tube 11 and the outer tube 12 through the exhaust slit 15. The vertical length of the exhaust slit 15 is the same as the vertical length of the wafer boat 16, or is formed to be longer than the vertical length of the wafer boat 16 and extend in both vertical directions. The second side wall 11b is located radially outward of the substrate W relative to the first side wall 11a and extends along the circumference of the substrate W. The second side wall 11b is located at a different position on the circumference of the substrate W than the first side wall 11a. The second side wall 11b has an arcuate shape in horizontal cross-section. In horizontal cross-section, the radius R2 of the arc of the second side wall 11b is larger than the radius R1 of the arc of the first side wall 11a. The difference between the radius R2 and the radius R1 is, for example, larger than the diameter of each gas supply pipe (first inert gas supply pipe 31a, process gas supply pipe 32a, and second inert gas supply pipe 33a) described later. In this case, each gas supply pipe can be housed within the nozzle housing 13 described later. Therefore, since a gas supply pipe need not be provided between the first side wall 11a and the substrate W, the gap between the inner surface of the first side wall 11a and the outer end of the substrate W can be narrowed. As a result, the film thickness around the periphery of the substrate W can be suppressed from increasing. Furthermore, since the volume within the inner tube 11 is reduced, gas loss can be reduced. The circumferential length of the second side wall 11b can be, for example, shorter than the circumferential length of the first side wall 11a. The circumferential length of the second side wall 11b is determined, for example, by the number of gas supply tubes housed in the nozzle housing 13. The second side wall 11b is positioned opposite the exhaust slit 15, sandwiching the center O of the inner tube 11 (substrate W). The third side wall 11c connects one end of the first side wall 11a and one end of the second side wall 11b. The third side wall 11c is connected to one end of the first side wall 11a and one end of the second side wall 11b. As shown in Figure 3, the angle θ1 between the second side wall 11b and the third side wall 11c can be, for example, an obtuse angle. In this case, the inert gas injected from the first inert gas supply pipe 31a (described later) tends to flow along the inner surface of the first side wall 11a (flowing along the circumference of the substrate W). The angle θ1 can be, for example, greater than 100 degrees and less than 150 degrees. In this case, the third side wall 11c functions as a flow plate toward the periphery of the substrate W. As a result, the inert gas injected from the first inert gas supply pipe 31a (described later) can be efficiently introduced toward the periphery of the substrate W, thereby reducing the amount of inert gas used in a given process. The angle θ1 may be more preferably, for example, not less than 120 degrees and not more than 130 degrees. In this case, the third side wall 11 c can further enhance the rectifying effect toward the peripheral edge of the substrate W. The fourth side wall 11d connects the other end of the first side wall 11a and the other end of the second side wall 11b. The fourth side wall 11d is connected to the other end of the first side wall 11a and the other end of the second side wall 11b. As shown in Figure 3, the angle θ2 between the second side wall 11b and the fourth side wall 11d can be, for example, an obtuse angle. In this case, the inert gas injected from the second inert gas supply pipe 33a (described later) tends to flow along the inner surface of the first side wall 11a (flowing along the circumference of the substrate W). The angle θ2 can be, for example, between 100 degrees and 150 degrees. In this case, the fourth side wall 11d functions as a flow plate directed toward the periphery of the substrate W. As a result, the inert gas injected from the second inert gas supply pipe 33a (described later) can be efficiently introduced toward the periphery of the substrate W, thereby reducing the amount of inert gas used in a given process. The angle θ2 may be more preferably, for example, not less than 120 degrees and not more than 130 degrees. In this case, the fourth side wall 11 d can further enhance the rectifying effect toward the peripheral edge of the substrate W. The second side wall 11 b , the third side wall 11 c , and the fourth side wall 11 d expand outward in the radial direction of the substrate W from the first side wall 11 a to form a nozzle housing 13 for housing the gas supply pipes. The lower end of the processing vessel 10 is supported by a cylindrical manifold 17. Manifold 17 is made of, for example, stainless steel. A flange 18 is formed at the upper end of manifold 17. Flange 18 supports the lower end of outer tube 12. A sealing member 19, such as an O-ring, is provided between flange 18 and the lower end of outer tube 12. This seal maintains an airtight seal within outer tube 12. An annular support portion 20 is provided on the inner wall of the upper portion of the manifold 17. The support portion 20 supports the lower end of the inner tube 11. A cover 21 is airtightly attached to the lower opening of the manifold 17 via a sealing member 22, such as an O-ring. This seals the lower opening of the processing container 10, i.e., the opening of the manifold 17, in an airtight manner. The cover 21 is formed, for example, of stainless steel. A rotating shaft 24 is provided through the center of the cover 21 via a magnetic fluid seal 23. The lower portion of the rotating shaft 24 is rotatably supported by an arm 25A of an elevating mechanism 25 formed of a wafer boat elevator. A rotating plate 26 is provided at the upper end of the rotating shaft 24. A wafer boat 16 holding substrates W is placed on the rotating plate 26, interposed between a quartz heat-insulating table 27. The wafer boat 16 rotates by rotating the rotating shaft 24. The wafer boat 16 moves vertically integrally with the lid 21 by raising and lowering the lifting mechanism 25. This allows the wafer boat 16 to be inserted into and removed from the processing vessel 10. The wafer boat 16 can be housed within the processing vessel 10. The wafer boat 16 holds a plurality of substrates W in a vertically spaced, approximately horizontal position. The gas supply unit 30 includes a first inert gas supply unit 31 , a processing gas supply unit 32 , and a second inert gas supply unit 33 . The first inert gas supply part 31 includes a first inert gas supply pipe 31a in the processing container 10 and a first inert gas supply path 31b outside the processing container 10. In the first inert gas supply path 31b, a first inert gas source 31c, a mass flow controller 31d and a valve 31e are sequentially arranged from the upstream side to the downstream side of the gas flow direction. Thus, the supply timing of the inert gas of the first inert gas source 31c is controlled by the valve 31e, and the flow rate is adjusted to a predetermined flow rate by the mass flow controller 31d. The inert gas system flows from the first inert gas supply path 31b to the first inert gas supply pipe 31a, and is sprayed into the processing container 10 from the first inert gas supply pipe 31a. The inert gas system, for example, nitrogen (N 2) Gas. The inert gas may be, for example, argon (Ar) gas. The process gas supply unit 32 includes a process gas supply pipe 32a within the process container 10 and a process gas supply path 32b outside the process container 10. In the process gas supply path 32b, a process gas source 32c, a mass flow controller 32d, and a valve 32e are sequentially arranged from upstream to downstream in the gas flow direction. The process gas from the process gas source 32c is supplied at a controlled timing by the valve 32e and adjusted to a predetermined flow rate by the mass flow controller 32d. The process gas system flows from the process gas supply path 32b into the process gas supply pipe 32a and is ejected from the process gas supply pipe 32a into the process container 10. The process gas system may be, for example, a silicon raw material gas. Alternatively, the process gas may be, for example, a metal raw material gas. Alternatively, the process gas may be, for example, an oxidizing gas or a nitriding gas. The second inert gas supply unit 33 includes a second inert gas supply pipe 33a within the processing container 10 and a second inert gas supply path 33b outside the processing container 10. A second inert gas source 33c, a mass flow controller 33d, and a valve 33e are provided in the second inert gas supply path 33b, in order from upstream to downstream in the gas flow direction. The inert gas from the second inert gas source 33c is supplied at a controlled timing by the valve 33e and adjusted to a predetermined flow rate by the mass flow controller 33d. The inert gas flows from the second inert gas supply path 33b into the second inert gas supply pipe 33a and is then sprayed into the processing container 10 from the second inert gas supply pipe 33a. The inert gas may be the same as the inert gas from the first inert gas source 31c, for example. Each gas supply pipe (first inert gas supply pipe 31a, process gas supply pipe 32a, and second inert gas supply pipe 33a) is fixed to the manifold 17. Each gas supply pipe is formed, for example, from quartz. Each gas supply pipe extends vertically and linearly near the second sidewall 11b of the nozzle housing 13. It then bends into an L-shape within the manifold 17 and extends horizontally, penetrating the L-shaped gas supply pipe of the manifold 17. The gas supply pipes are arranged at intervals along the circumference of the substrate W and are formed at the same height. The first inert gas supply pipe 31a, the processing gas supply pipe 32a, and the second inert gas supply pipe 33a are arranged in this order along the circumference of the substrate W, starting from the vicinity of the exhaust port 41. The pair of inert gas supply pipes (the first inert gas supply pipe 31a and the second inert gas supply pipe 33a) are positioned along the circumference of the substrate W, sandwiching the processing gas supply pipe 32a. The first inert gas supply pipe 31a and the second inert gas supply pipe 33a spray inert gas toward the inner surface of the second sidewall 11b, the third sidewall 11c, or the fourth sidewall 11d. In this manner, the inert gas rebounds from the inner surface of the second sidewall 11b, the third sidewall 11c, or the fourth sidewall 11d, effectively supplying the inert gas to the gap between the outer edge of the substrate W and the inner surface of the first sidewall 11a. Therefore, a low flow rate of inert gas can be used to relatively increase the pressure in the gap between the outer edge of the substrate W and the inner surface of the first sidewall 11a, thereby suppressing the inflow of process gas into this gap. This reduces the environmental load by reducing the amount of inert gas used. Furthermore, the supply of process gas to the vicinity of the center of each substrate W is promoted, minimizing the difference in process gas supply between the periphery and the center of each substrate W. Consequently, in-plane process uniformity is improved. The first inert gas supply pipe 31a sprays inert gas, for example, so that the inert gas is supplied into the inner tube 11 along the inner surface of the third side wall 11c. The second inert gas supply pipe 33a sprays inert gas, for example, so that the inert gas is supplied into the inner tube 11 along the inner surface of the fourth side wall 11d. The process gas supply pipe 32a sprays process gas, for example, toward the inner surface of the second side wall 11b. The process gas supply pipe 32a may spray process gas directly toward, for example, the center O of the substrate W, rather than toward the second side wall 11b. A plurality of gas holes 31f (first gas holes) are provided in the portion of the first inert gas supply tube 31a located within the inner tube 11. A plurality of gas holes 32f are provided in the portion of the processing gas supply tube 32a located within the inner tube 11. A plurality of gas holes 33f (second gas holes) are provided in the portion of the second inert gas supply tube 33a located within the inner tube 11. The gas holes (gas holes 31f, gas holes 32f, gas holes 33f) are arranged at predetermined intervals along the extension direction of each gas supply tube. Each gas hole ejects gas in a horizontal direction. The intervals between the gas holes are, for example, set to be the same as the intervals between the substrates W held on the wafer boat 16. The height position of each gas hole is, for example, set to be the same as the position of each substrate W. As shown in FIG3 , a half-line extending from the center of the first inert gas supply tube 31 a toward the radially outward direction of the substrate W is referred to as half-line L1. A half-line extending from the center of the first inert gas supply tube 31 a toward the boundary between the second side wall 11 b and the third side wall 11 c is referred to as half-line L2. A half-line extending from the center of the first inert gas supply tube 31 a toward the boundary between the first side wall 11 a and the third side wall 11 c is referred to as half-line L3. As shown in FIG4 , each gas hole 31f can be located on the second side wall 11b side (opposite to the substrate W side) between half-lines L1 and L2 in the tube wall (first tube wall) of the first inert gas supply tube 31a. In other words, each gas hole 31f can be located in the area of ​​the tube wall (first tube wall) of the first inert gas supply tube 31a bounded by half-lines L1 and L2. This allows the first inert gas supply tube 31a to spray inert gas toward the area bounded by half-lines L1 and L2 on the second side wall 11b (indicated by the solid arrows in FIG4 ). In this case, the inert gas sprayed from each gas hole 31f rebounds off the inner surface of the second side wall 11b, forming a gas flow F11 that flows along the inner surface of the third side wall 11c and the inner surface of the first side wall 11a. Since the gas flow F11 flows along the third side wall 11 c , which has a rectifying effect toward the periphery of the substrate W, the inert gas can be efficiently introduced to the periphery of the substrate W. As a result, the amount of inert gas used can be optimized, and the concentration of the processing gas can be selectively diluted. Furthermore, when the arrangement of the gas holes 31f in the tube wall (first tube wall) is set to an area bounded by the half-line L1 and the half-line L2, in addition to the gas flow F11, a gas flow F12 is generated toward the process gas supply tube 32a. Since the gas flow F12 dilutes the process gas in the process gas injection area, it can dilute the overall process gas concentration within the surface of the substrate W. This allows for gentle adjustment of the film thickness distribution within the surface. Here, when the injection direction of the gas from each gas hole 31f is set closer to the half-line L2 side than the half-line L1, the flow of the gas flow F11 can be more actively formed, so the concentration of the processing gas in the peripheral portion of the substrate W can be efficiently and selectively diluted. Furthermore, when the ejection direction of the gas from each gas hole 31f is set closer to the half line L1 than the half line L2, the gas flow F12 can be formed more actively, thereby improving the overall dilution effect of the processing gas concentration. Furthermore, when each gas hole 31f sprays inert gas toward the area bounded by half-line L1 and half-line L2, as shown in FIG7 , the sprayed inert gas can also be diffused in the vertical direction. This improves inter-surface uniformity by forming vertical (inter-surface) diffusion areas of inert gas on both sides of the surface where the process gas is sprayed. FIG4 also shows a case where each gas hole 31 is located at the intersection of the first inert gas supply pipe 31a and the half-line L1 (dashed arrows in FIG4 ). In this case, as shown in FIG7 , the inert gas ejected from each gas hole 31f rebounds from the inner surface of the second sidewall 11b, thereby improving vertical diffusion. Consequently, inter-surface uniformity of the processed surface is improved. As shown in Figure 5 , each gas hole 31f can also be located on the third side wall 11c side between half-lines L2 and L3 in the wall of the first inert gas supply pipe 31a. In this case, the inert gas ejected from each gas hole 31f rebounds against the inner surface of the third side wall 11c, thereby forming a gas flow F13 that flows along the inner surface of the third side wall 11c and the inner surface of the first side wall 11a. On the other hand, there is almost no gas flow toward the process gas supply pipe 32a. Gas flow F13 selectively dilutes the concentration of the process gas in the peripheral portion of the substrate W. This allows for rapid adjustment of the in-plane distribution of the process. This is particularly effective when it is undesirable to suppress the increase in film thickness at the peripheral portion of the substrate W. Furthermore, as shown in Figure 7 , the inert gas ejected from each gas hole 31f rebounds against the inner surface of the third side wall 11c, thereby enhancing vertical diffusion. Therefore, the uniformity of the processed surfaces is improved. As shown in Figure 6, each gas hole 31f may also be located at the intersection of the first inert gas supply pipe 31a and the half-line L2. In this case, an intermediate effect between the cases shown in Figures 4 and 5 can be obtained. As shown in FIG3 , a half-line extending from the center of the second inert gas supply pipe 33a toward the radially outward direction of the substrate W is referred to as half-line L4. A half-line extending from the center of the second inert gas supply pipe 33a toward the boundary between the second side wall 11b and the fourth side wall 11d is referred to as half-line L5. A half-line extending from the center of the second inert gas supply pipe 33a toward the boundary between the first side wall 11a and the fourth side wall 11d is referred to as half-line L6. As shown in FIG4 , each gas hole 33f can be located on the second side wall 11b side (opposite to the substrate W side) between half-lines L4 and L5 in the tube wall (second tube wall) of the second inert gas supply tube 33a. In other words, each gas hole 33f can be located in the area of ​​the tube wall (second tube wall) of the second inert gas supply tube 33a bounded by half-lines L4 and L5. This allows the second inert gas supply tube 33a to spray inert gas toward the area bounded by half-lines L4 and L5 on the second side wall 11b (indicated by the solid arrows in FIG4 ). In this case, the inert gas sprayed from each gas hole 33f rebounds from the inner surface of the second side wall 11b, forming a gas flow F21 that flows along the inner surface of the fourth side wall 11d and the inner surface of the first side wall 11a. Since the gas flow F21 flows along the fourth side wall 11d having a rectifying effect toward the periphery of the substrate W, the inert gas can be efficiently introduced to the periphery of the substrate W. As a result, the amount of inert gas used can be optimized and the concentration of the processing gas can be selectively diluted. Furthermore, when the arrangement of the gas holes 33f in the tube wall (second tube wall) is set to the area enclosed by the half-line L4 and the half-line L5, in addition to the gas flow F21, a gas flow F22 is formed toward the process gas supply tube 32a. Since the gas flow F22 dilutes the process gas in the process gas injection area, it can dilute the overall process gas concentration in the surface of the substrate W. This allows for gentle adjustment of the film thickness distribution in the surface. Here, when the injection direction of the gas from each gas hole 33f is set closer to the half-line L5 side than the half-line L4, the flow of the gas flow F21 can be more actively formed, so the concentration of the processing gas in the peripheral portion of the substrate W can be efficiently and selectively diluted. Furthermore, when the ejection direction of the gas from each gas hole 33f is set closer to the half line L4 than the half line L5, the gas flow F22 can be more actively formed, thereby improving the overall dilution effect of the processing gas concentration. Furthermore, when each gas hole 33f sprays inert gas toward the area bounded by half-line L4 and half-line L5, as shown in FIG7 , the sprayed inert gas can also be diffused in the vertical direction. This improves inter-surface uniformity by forming inert gas diffusion areas in the vertical direction (inter-surface direction) on both sides of the sprayed process gas. FIG4 also shows a case where each gas hole 33f is located at the intersection of the wall of the second inert gas supply pipe 33a and the half-line L4 (dashed arrows in FIG4 ). In this case, as shown in FIG7 , the inert gas ejected from each gas hole 33f rebounds from the inner surface of the second sidewall 11b, thereby improving vertical diffusion. Consequently, inter-surface uniformity of the processed surface is improved. As shown in Figure 5 , each gas hole 33f can also be located on the fourth side wall 11d side between half-lines L5 and L6 in the wall of the second inert gas supply pipe 33a. In this case, the inert gas ejected from each gas hole 33f rebounds against the inner surface of the fourth side wall 11d, thereby forming a gas flow F23 that flows along the inner surface of the fourth side wall 11d and the inner surface of the first side wall 11a. On the other hand, there is almost no gas flow toward the process gas supply pipe 32a. Gas flow F23 selectively dilutes the concentration of the process gas in the periphery of the substrate W. This allows for rapid adjustment of the in-plane distribution of the process. This is particularly effective when it is undesirable to suppress the increase in film thickness at the periphery of the substrate W. As shown in Figure 7 , the inert gas ejected from each gas hole 33f rebounds against the inner surface of the fourth side wall 11d, thereby enhancing vertical diffusion. Therefore, the uniformity of the processed surfaces is improved. As shown in Figure 6, each gas hole 33f may also be located at the intersection of the wall of the second inert gas supply pipe 33a and the half-line L5. In this case, an intermediate effect between the cases shown in Figures 4 and 5 can be obtained. 4 to 6 , when the processing gas is ejected from the gas holes 32f toward the inner surface of the second side wall 11b, the diffusion ranges of the gases immediately after being ejected from the gas holes 31f, 32f, and 33f are shown as regions A11, A12, and A13, respectively. The gas supply unit 30 can also mix multiple types of gases and discharge the mixed gas from a single supply pipe. Each gas supply pipe (the first inert gas supply pipe 31a, the process gas supply pipe 32a, and the second inert gas supply pipe 33a) can have different shapes or configurations. For example, one or both of the first inert gas supply pipe 31a and the second inert gas supply pipe 33a can be a bent-back gas supply pipe, bent into an L-shape at the bottom and then bent into a U-shape at the top, extending downward. For example, the process gas supply pipe 32a can also be a bent-back gas supply pipe. The gas supply unit 30 may include another gas supply pipe in addition to the first inert gas supply pipe 31a, the process gas supply pipe 32a, and the second inert gas supply pipe 33a. For example, multiple process gas supply pipes may be provided between the first inert gas supply pipe 31a and the second inert gas supply pipe 33a. The multiple process gas supply pipes may supply the same process gas or different process gases. For example, one or more inert gas supply pipes may be provided between the first inert gas supply pipe 31a and the process gas supply pipe 32a. For example, one or more inert gas supply pipes may be provided between the process gas supply pipe 32a and the second inert gas supply pipe 33a. As shown by the arrows in Figure 2 , the exhaust section 40 exhausts gas from the inner tube 11 through the air slit 15 and through the space P1 between the inner tube 11 and the outer tube 12 to the exhaust port 41. The exhaust port 41 is formed on the upper sidewall of the manifold 17 above the support portion 20. An exhaust passage 42 is connected to the exhaust port 41. A pressure regulating valve 43 and a vacuum pump 44 are sequentially inserted into the exhaust passage 42, enabling exhaust of the interior of the processing container 10. The heating unit 50 is provided around the outer tube 12. The heating unit 50 is provided on, for example, the bottom plate 28. The heating unit 50 has a cylindrical shape to cover the outer tube 12. The heating unit 50 includes, for example, a heater to heat each substrate W in the processing container 10. The control unit 90 controls the operation of various components of the substrate processing apparatus 1 to simultaneously process a plurality of substrates W stored in the processing container 10. The control unit 90 can be, for example, a computer. The computer program that controls the operation of the various components of the substrate processing apparatus 1 is stored on a recording medium. The recording medium can be, for example, a floppy disk, an optical disk, a hard disk, a flash memory, or a DVD. Next, a description will be given of a substrate processing method performed using the substrate processing apparatus 1 of the embodiment. The substrate processing method of the embodiment is performed by the control unit 90 controlling the operation of each unit of the substrate processing apparatus 1 . First, a wafer boat 16 holding a plurality of substrates W is lifted from below and loaded into a processing container 10, which has been previously adjusted to a predetermined temperature. The lower opening of the processing container 10 is then sealed by closing the lid 21. Next, the interior of the processing container 10 is evacuated by the exhaust unit 40 to maintain the processing pressure. Simultaneously, the temperature of the substrates W is raised by the heating unit 50 to maintain the processing temperature. The rotating shaft 24 then rotates the wafer boat 16. Next, the controller 90 injects process gas into the processing container 10 from the process gas supply pipe 32a while simultaneously injecting inert gas from the first and second inert gas supply pipes 31a and 33a toward the inner surfaces of the second sidewall 11b, the third sidewall 11c, or the fourth sidewall 11d. This allows each substrate W to be processed simultaneously. At this time, the inert gas flows along the third or fourth sidewall 11c, 11d, efficiently supplying the inert gas to the gap between the outer edge of the substrate W and the inner surface of the first sidewall 11a. Consequently, the low flow rate of inert gas can increase the pressure in the gap between the outer edge of the substrate W and the inner surface of the first sidewall 11a, thereby suppressing the inflow of process gas into this gap. As a result, the environmental load can be reduced by reducing the amount of inert gas used. Furthermore, the supply of process gas to the center of each substrate W is facilitated, minimizing the difference in process gas supply between the periphery and the center of each substrate W. The flow rate of the inert gas ejected from the first inert gas supply pipe 31a can be lower than, for example, the flow rate of the process gas ejected from the process gas supply pipe 32a. The flow rate of the inert gas ejected from the second inert gas supply pipe 33a can also be lower than, for example, the flow rate of the process gas ejected from the process gas supply pipe 32a. That is, according to the substrate processing apparatus 1 of this embodiment, the inert gas rectifying effect of the third sidewall 11c or the fourth sidewall 11d allows the flow rate of each inert gas from the first inert gas supply pipe 31a and the second inert gas supply pipe 33a to be set lower than the flow rate of the process gas. Next, after the pressure in the processing container 10 is increased to atmospheric pressure and the temperature in the processing container 10 is lowered to the unloading temperature, the wafer boat 16 holding the plurality of substrates W that have been applied is unloaded from the processing container 10 . [Second Embodiment] Referring to Figures 8 to 12 , a substrate processing apparatus 1X according to a second embodiment will be described. The substrate processing apparatus 1X differs from the substrate processing apparatus 1 in that it lacks a nozzle housing 13 . Other configurations are the same as those of the substrate processing apparatus 1 . The following description will focus on the differences from the substrate processing apparatus 1 . 8 , a substrate processing apparatus 1X includes a processing container 10X having an inner tube 11X and an outer tube 12 instead of the processing container 10. The inner tube 11X has a fifth side wall 11e. The fifth side wall 11e extends along the circumference of the substrate W. The fifth side wall 11e has a cylindrical shape. A rectangular exhaust slit 15 is formed along a portion of the circumference of the fifth side wall 11e along its longitudinal direction (vertical direction). The radius R1X of the fifth side wall 11e is larger than the radius R1 of the arc of the first side wall 11a of the substrate processing apparatus 1. This allows the gas supply pipes (the first inert gas supply pipe 31a, the processing gas supply pipe 32a, and the second inert gas supply pipe 33a) to be positioned between the outer end of the substrate W and the inner surface of the fifth side wall 11e. The first inert gas supply pipe 31a and the second inert gas supply pipe 33a each spray inert gas toward the inner surface of the fifth sidewall 11e. In this manner, the inert gas rebounds against the inner surface of the fifth sidewall 11e, efficiently supplying the inert gas to the gap between the outer end of the substrate W and the inner surface of the fifth sidewall 11e. Therefore, a low flow rate of inert gas can raise the pressure in the gap between the outer end of the substrate W and the inner surface of the fifth sidewall 11e, thereby suppressing the inflow of process gas into this gap. As a result, the environmental load can be reduced by reducing the amount of inert gas used. Furthermore, the supply of process gas to the vicinity of the center of each substrate W is promoted, minimizing the difference in process gas supply between the periphery and the center of each substrate W. The inert gas ejected from each gas hole 31f and each gas hole 33f rebounds from the inner surface of the fifth sidewall 11e, thereby forming a gas flow along the inner surface of the fifth sidewall 11e, away from the process gas supply pipe 32a, and a gas flow toward the process gas supply pipe 32a. The gas flow along the inner surface of the fifth sidewall 11e, away from the process gas supply pipe 32a, selectively dilutes the concentration of the process gas in the periphery of the substrate W. The gas flow toward the process gas supply pipe 32a dilutes the concentration of the process gas throughout the surface of the substrate W. As shown in FIG9 , a half-line extending from the center of the first inert gas supply pipe 31 a toward the radially outward direction of the substrate W is referred to as half-line L7. A half-line extending from the center of the first inert gas supply pipe 31 a toward the center of the processing gas supply pipe 32 a is referred to as half-line L8. A half-line extending from the center of the first inert gas supply pipe 31 a perpendicular to half-line L7 and toward the side opposite to the processing gas supply pipe 32 a is referred to as half-line L9. In this case, as shown in Figure 10 , each gas hole 31f can be located on the side of the fifth side wall 11e (opposite to the substrate W side) between half-lines L7 and L8 in the wall of the first inert gas supply tube 31a. In other words, each gas hole 31f can be located in the area of ​​the wall (first wall) of the first inert gas supply tube 31a enclosed by half-lines L7 and L8. In this case, the gas flow toward the processing gas supply tube 32a becomes stronger than the gas flow along the inner surface of the fifth side wall 11e, away from the processing gas supply tube 32a. Therefore, the in-plane distribution of the processing can be adjusted gently. Furthermore, as shown in Figure 11 , each gas hole 31f can be located on the side of the fifth side wall 11e (opposite to the substrate W side) between half-lines L7 and L9 in the wall of the first inert gas supply tube 31a. In other words, each gas hole 31f can be located in the area of ​​the wall (first wall) of the first inert gas supply tube 31a enclosed by half-lines L7 and L9. In this case, the gas flow along the inner surface of the fifth side wall 11e, away from the processing gas supply tube 32a, becomes stronger than the gas flow toward the processing gas supply tube 32a. This allows for rapid adjustment of the in-plane distribution of the processing. Therefore, this is particularly effective when it is desired to suppress the increase in film thickness around the periphery of the substrate W. Alternatively, as shown in FIG12 , each gas hole 31f may be located at the intersection of the first inert gas supply pipe 31a and the half-line L7. In this case, the gas flow along the inner surface of the fifth sidewall 11e, away from the processing gas supply pipe 32a, is equal to the gas flow toward the processing gas supply pipe 32a. This achieves an effect intermediate between the cases shown in FIG10 and FIG11 . As shown in FIG9 , a half-line extending from the center of the second inert gas supply pipe 33a toward the radially outward direction of the substrate W is referred to as half-line L10. A half-line extending from the center of the second inert gas supply pipe 33a toward the center of the processing gas supply pipe 32a is referred to as half-line L11. A half-line extending from the center of the second inert gas supply pipe 33a perpendicular to half-line L10 and toward the side opposite to the processing gas supply pipe 32a is referred to as half-line L12. In this case, as shown in Figure 10 , each gas hole 33f can be located on the side of the fifth sidewall 11e (opposite to the substrate W side) between half-lines L10 and L11 in the wall of the second inert gas supply pipe 33a. In other words, each gas hole 33f can be located in the area of ​​the wall (second wall) of the second inert gas supply pipe 33a enclosed by half-lines L10 and L11. In this case, the gas flow toward the processing gas supply pipe 32a becomes stronger than the gas flow along the inner surface of the fifth sidewall 11e, away from the processing gas supply pipe 32a. Therefore, the in-plane distribution of the processing can be adjusted more gently. Furthermore, as shown in Figure 11 , each gas hole 33f can be located on the side of the fifth side wall 11e (opposite to the substrate W side) between half-lines L10 and L12 in the wall of the second inert gas supply tube 33a. In other words, each gas hole 33f can be located in the area of ​​the wall (second wall) of the second inert gas supply tube 33a enclosed by half-lines L10 and L12. In this case, the gas flow along the inner surface of the fifth side wall 11e, away from the processing gas supply tube 32a, becomes stronger than the gas flow toward the processing gas supply tube 32a. This allows for rapid adjustment of the in-plane distribution of the processing. Therefore, this is particularly effective when it is desired to suppress the increase in film thickness around the periphery of the substrate W. Alternatively, as shown in FIG12 , each gas hole 33f may be located at the intersection of the wall of the second inert gas supply pipe 33a with the half-line L10. In this case, the gas flow along the inner surface of the fifth sidewall 11e, away from the processing gas supply pipe 32a, is equal to the gas flow toward the processing gas supply pipe 32a. This achieves an effect intermediate between the cases shown in FIG10 and FIG11 . 10 to 12 illustrate an example in which the processing gas is injected from each gas hole 32f toward the inner surface of the fifth sidewall 11e. However, the present invention is not limited thereto. The processing gas supply pipe 32a may inject the processing gas directly toward, for example, the center O of the substrate W, rather than toward the fifth sidewall 11e. The embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims and their spirit. This international application claims the benefit of priority based on Japanese Patent Application No. 2022-120776, filed on July 28, 2022, and the entire contents of that application are incorporated herein by reference. 1, 1X: Substrate processing apparatus 10, 10X: Processing container 11, 11X: Inner tube 11a: First side wall 11b: Second side wall 11c: Third side wall 11d: Fourth side wall 11e: Fifth side wall 12: Outer tube 13: Nozzle housing 15: Exhaust slit 16: Wafer boat 17: Manifold 18: Flange 19: Sealing member 20: Support 21: Cover 22: Sealing member 23: Magnetic fluid seal 24: Rotating shaft 25: Elevating mechanism 25A: Arm 26: Rotating plate 27: Insulating table 28: Bottom plate 30: Gas supply unit 31: First inert gas supply unit 31a: First inert gas supply pipe 31b: First inert gas supply path 31c: First inert gas source 31d: Mass flow controller 31e: Valve 31f: Gas port (first gas port) 32: Processing gas supply unit 32a: Processing gas supply pipe 32b: Processing gas supply path 32c: Processing gas source 32d: Mass flow controller 32e: Valve 32f: Gas hole 33: Second inert gas supply unit 33a: Second inert gas supply pipe 33b: Second inert gas supply path 33c: Second inert gas source 33d: Mass flow controller 33e: Valve 33f: Gas hole (second gas hole) 40: Exhaust unit 41: Exhaust port 42: Exhaust passage 43: Pressure regulating valve 44: Vacuum pump 50: Heating unit 90: Control unit A11, A12, A13: Areas F11, F12, F13, F21, F22, F23: Gas flows L1~L12: Half line O: Center P1: Space R1, R1X, R2: Radius W: Substrate θ1, θ2: Angle [Figure 1] Figure 1 is a longitudinal sectional view of a substrate processing apparatus according to a first embodiment. [Figure 2] Figure 2 is a transverse sectional view of a substrate processing apparatus according to a first embodiment. [Figure 3] Figure 3 is a diagram illustrating the orientation of gas holes. [Figure 4] Figure 4 is a diagram illustrating the flow of gas in the horizontal direction. [Figure 5] Figure 5 is a diagram illustrating the flow of gas in the horizontal direction. [Figure 6] Figure 6 is a diagram illustrating the flow of gas in the horizontal direction. [Figure 7] Figure 7 is a diagram illustrating the flow of gas in the vertical direction. [Figure 8] Figure 8 is a transverse sectional view of a substrate processing apparatus according to a second embodiment. [Figure 9] Figure 9 is a diagram illustrating the orientation of gas holes. [Figure 10] Figure 10 is a diagram illustrating the orientation of gas holes. [Figure 11] Figure 11 is a diagram illustrating the orientation of gas holes. [Figure 12] Figure 12 is a diagram illustrating the orientation of gas holes. 11a: 1st side wall 11b: Second side wall 11c: 3rd side wall 11d: 4th side wall 12: External tube 13: Nozzle storage 31a: 1st inert gas supply pipe 32a: Processing gas supply pipe 33a: Second inert gas supply pipe L1~L6: half straight line W: substrate θ1,θ2: angle

Claims

1. A substrate processing apparatus, comprising: a processing container for housing a plurality of substrates arranged in multiple layers; a processing gas supply pipe extending along the arrangement direction of the plurality of substrates to supply processing gas into the processing container; and a pair of inert gas supply pipes disposed at positions that enclose the processing gas supply pipes along the circumference of the substrates and extending along the arrangement direction to supply inert gas into the processing container; the pair of inert gas supply pipes spraying the inert gas toward an inner surface of a sidewall of the processing container; the inner surface being used to form a flow of the inert gas along the circumference of the substrates.

2. The substrate processing apparatus as described in claim 1, wherein, The processing gas supply pipe sprays the processing gas toward the inner surface of the sidewall.

3. The substrate processing apparatus as described in claim 1, wherein, The sidewall includes: a first sidewall extending along the circumferential direction; a second sidewall located further outward in the radial direction from the first sidewall and extending along the circumferential direction at a position different from the first sidewall; a third sidewall connected to one end of the first sidewall and one end of the second sidewall; and a fourth sidewall connected to the other end of the first sidewall and the other end of the second sidewall; the processing gas supply pipe and the pair of inert gas supply pipes are disposed in the area surrounded by the second sidewall, the third sidewall and the fourth sidewall.

4. The substrate processing apparatus as described in claim 3, wherein, The angles between the second and third sidewalls, and between the second and fourth sidewalls, are obtuse angles.

5. The substrate processing apparatus as described in claim 3, wherein, The pair of inert gas supply pipes includes: a first inert gas supply pipe located near the third sidewall, closer to the processing gas supply pipe, and having a first pipe wall with a plurality of first gas holes formed along the arrangement direction; and a second inert gas supply pipe located near the fourth sidewall, closer to the processing gas supply pipe, and having a second pipe wall with a plurality of second gas holes formed along the arrangement direction; the first inert gas supply pipe injects the inert gas from the plurality of first gas holes toward the second sidewall or the third sidewall, and the second inert gas supply pipe injects the inert gas from the plurality of second gas holes toward the second sidewall or the fourth sidewall.

6. The substrate processing apparatus as described in claim 5, wherein, In a cross-section orthogonal to the arrangement direction, if the half-line extending from the center of the first inert gas supply pipe toward the radial direction is defined as the first half-line, and the half-line extending from the center of the first inert gas supply pipe toward the boundary between the second and third sidewalls is defined as the second half-line, then the plurality of first gas holes are located in the area enclosed by the first half-line and the second half-line within the first pipe wall.

7. The substrate processing apparatus as described in claim 5, wherein, In a cross-section orthogonal to the arrangement direction, if the half-line extending from the center of the first inert gas supply pipe toward the radial direction is defined as the first half-line, then the plurality of first gas holes are located at the intersection of the first pipe wall and the first half-line.

8. The substrate processing apparatus as described in claim 5, wherein, In a cross-section orthogonal to the arrangement direction, if the half-line from the center of the first inert gas supply pipe toward the boundary between the second and third sidewalls is defined as the second half-line, then the plurality of first gas holes are located at the intersection of the first pipe wall and the second half-line.

9. The substrate processing apparatus as described in claim 5, wherein, In a cross-section orthogonal to the arrangement direction, if the half-line from the center of the first inert gas supply pipe toward the boundary between the second and third sidewalls is defined as the second half-line, and the half-line from the center of the first inert gas supply pipe toward the boundary between the first and third sidewalls is defined as the third half-line, then the plurality of first gas holes are located in the area within the first pipe wall enclosed by the second and third half-lines.

10. The substrate processing apparatus as described in any one of claims 5 to 9, wherein, In a cross-section orthogonal to the arrangement direction, if the half-line extending from the center of the second inert gas supply pipe toward the radial direction is defined as the fourth half-line, and the half-line extending from the center of the second inert gas supply pipe toward the boundary between the second and fourth sidewalls is defined as the fifth half-line, then the plurality of second gas holes are located in the area enclosed by the fourth and fifth half-lines in the second pipe wall.

11. The substrate processing apparatus as described in any one of claims 5 to 9, wherein, In a cross-section orthogonal to the arrangement direction, if the half-line extending from the center of the second inert gas supply pipe toward the radial direction is defined as the fourth half-line, then the plurality of second gas holes are located at the intersection of the second pipe wall and the fourth half-line.

12. The substrate processing apparatus as described in any one of claims 5 to 9, wherein, In a cross-section orthogonal to the arrangement direction, if the half-line from the center of the second inert gas supply pipe toward the boundary between the second and fourth sidewalls is defined as the fifth half-line, then the plurality of second gas holes are located at the intersection of the second pipe wall and the fifth half-line.

13. The substrate processing apparatus of any one of claims 5 to 9, wherein, In a cross-section orthogonal to the arrangement direction, if the half-line from the center of the second inert gas supply pipe toward the boundary between the second and fourth sidewalls is defined as the fifth half-line, and the half-line from the center of the second inert gas supply pipe toward the boundary between the first and fourth sidewalls is defined as the sixth half-line, then the plurality of second gas holes are located in the area enclosed by the fifth and sixth half-lines in the second pipe wall.

14. The substrate processing apparatus as claimed in claim 1, wherein, The pair of inert gas supply pipes are respectively directed toward the processing gas supply pipe to form a gas flow for directly diluting the processing gas that has just been injected from the processing gas supply pipe.

15. A substrate processing method, comprising processing a plurality of substrates housed in a processing container in a substrate processing apparatus; the substrate processing apparatus comprising: a processing container housing a plurality of substrates arranged in multiple layers; a processing gas supply pipe extending along the arrangement direction of the plurality of substrates to supply processing gas into the processing container; and a pair of inert gas supply pipes disposed at positions that enclose the processing gas supply pipes along the circumference of the substrates and extending along the arrangement direction to supply inert gas into the processing container; the substrate processing method comprising the steps of: simultaneously injecting the processing gas into the processing container from the processing gas supply pipes and simultaneously injecting the inert gas from the pair of inert gas supply pipes toward an inner surface of a sidewall of the processing container; the inner surface being through which the inert gas flows in the circumference of the substrate.

16. The substrate processing method as described in claim 15, wherein, The flow rate of the inert gas injected from each of the pair of inert gas supply pipes is less than the flow rate of the processing gas injected from the processing gas supply pipe.

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