Photonic assembly and method for forming the same

Abstract

The photonic component includes a composite die, which includes: a photonic integrated circuit die, including a waveguide and a photonic device; an electronic integrated circuit die, including a semiconductor device; and an embedded optical connector die, which contacts the top surface of the photonic integrated circuit die and is laterally spaced from the electronic integrated circuit die.

Description

Photon Component and Method for Forming the Same Embodiments of the present invention relate to semiconductor technology, and more particularly to photon components and methods for forming the same. Photonic integrated circuits (PICs) and electronic integrated circuits (EICs) are widely used in modern electronic products. Photonic integrated circuits include photon components formed in a photon die, and electronic integrated circuits include semiconductor devices formed in a semiconductor die. Photonic integrated circuits rely on light energy and are supported by a laser source, which enhances integration, speed, and heat reduction. The manufacture of photonic integrated circuits can use monolithic photonic integration or hybrid photonic integration. The applications of photonic integrated circuits span, for example, automotive sensors, healthcare systems, and data communication. Photonic integrated circuits offer advantages such as energy efficiency, high speed, and integration compatibility with electronic integrated circuits. In some embodiments, a photon component is provided, which includes a composite die including a photonic integrated circuit die including waveguides and photon devices; an electronic integrated circuit die including semiconductor devices; and an embedded optical connector die contacting a top surface of the photonic integrated circuit die and laterally spaced apart from the electronic integrated circuit die. In some embodiments, a photon component is provided, which includes a composite die including a photonic integrated circuit die including waveguides and photon devices; an electronic integrated circuit die including semiconductor devices; a carrier semiconductor substrate located above the photonic integrated circuit die and the electronic integrated circuit die, wherein the composite die is configured to provide a light beam path extending through the carrier semiconductor substrate; and an embedded optical connector die including optical elements located in or at one end of the light beam path. In other embodiments, a method for forming a photon component is provided, which includes providing a photonic integrated circuit die including waveguides and photon devices; bonding an electronic integrated circuit die including semiconductor devices to the photonic integrated circuit die; attaching an optical connector die including optical elements to the photonic integrated circuit die; and forming a dielectric matrix around the optical connector die on a sidewall of the electronic integrated circuit die. It is to be understood that the following provides many different embodiments or examples for implementing different components of the subject matter provided. Specific examples of each component and its arrangement are described below to simplify the description of the content. Of course, these are only examples and are not intended to limit the embodiments of the present invention. For example, in the subsequent description, in the embodiment where the first component is formed above or on the second component, the first and second components are formed in direct contact, and embodiments may also include that additional components may be formed between the first and second components, such that the first and second components may not be in direct contact. Unless otherwise explicitly stated, elements having the same reference symbols are assumed to be the same elements or similar elements, and are assumed to have the same material composition and provide the same function. Furthermore, for the convenience of describing the relationship between an element or component in a drawing and another (plural) element or (plural) component, spatial relative terms may be used, such as "under", "below", "lower", "above", "upper" and similar terms. In addition to the orientation shown in the drawings, spatial relative terms also cover different orientations of the device during use or operation. The device may also be positioned otherwise (for example, rotated 90 degrees or in other orientations), and the description of the spatial relative terms used is interpreted accordingly. Unless otherwise explicitly stated, elements having the same reference symbols mean the same elements, and are assumed to have the same material composition and the same thickness range. As used herein, an element or system "configured to" perform a function or operation or "configured as" providing or performing a function or operation means providing the hardware and applicable software to provide such a function or operation described in the embodiments of the present invention. If no details of such hardware or such software are explicitly described herein, such functions or operations known in the art may be used. The compact universal photonic engine (COUPE) includes a combination of a photonic integrated circuit and an electronic integrated circuit that provides optoelectronic transmission. The compact universal photonic engine allows the processing of optical signals using an electronic signal transmission system. The compact universal photonic engine integrates various optical components, electro-optical conversion devices, and optical fibers. In optoelectronic devices, laser light plays a crucial role. Optical fibers can be used to send laser light to the compact universal photonic engine. The laser light can pass through a supporting silicon substrate. The laser light can be refocused and re-concentrated through an optical lens to reduce spatial light divergence. According to one aspect of the embodiments of the present invention, a compact universal photon engine may include optical elements for effectively guiding laser light (also simply referred to as light) to optical devices in the die. Specifically, an electronic integrated circuit (EIC) die and an embedded optical connector die are bonded to a photon integrated circuit (PIC) die to form a composite die. A dielectric matrix may laterally surround the electronic integrated circuit die and the embedded optical connector die to form the composite die. A carrier semiconductor substrate may be attached to components of the electronic integrated circuit die, the embedded optical connector die, and the dielectric matrix. The embedded optical connector die includes an optical deflector that can deflect horizontally propagating photons in a vertical direction and / or deflect vertically propagating photons in a horizontal direction. Various embodiments herein may provide a multifunctional embedded optical connector die located in a compact universal photon engine die. The optical connector serves as an optical conduit between an external optical fiber or optical coupler device and a waveguide in a composite die serving as the compact universal photon engine die. The optical deflector in the embedded optical connector die of various embodiments may provide flexible optical transmission between a photon integrated circuit (PIC) and an optical fiber or optical coupler device. Various embodiments of the present invention may provide multiple coupling modes for an optical fiber or optical coupler device, including vertical and horizontal coupling types. Embodiments of the present invention may be used in fields such as photon integrated circuits, silicon photonics, three-dimensional integrated wafers with photon applications, and / or general compact universal photon engine technologies. FIG. 1B is an enlarged view of a part of the structure of the first embodiment in FIG. 1A. FIGS. 1C, 1D, 1E, and 1F are schematic vertical cross-sectional views of various alternative configurations of the structure of the first embodiment. Referring to FIGS. 1A and 1B, the structure of the first embodiment includes an optical component that includes a composite die 780. The composite die 780 includes a compact universal photon engine (COUPE) that includes a combination of a photon integrated circuit provided in a photon integrated circuit (PIC) die 700 and an electronic integrated circuit provided in an electronic integrated circuit (EIC) die 600. The optical component generally includes at least one optical fiber 140 provided by an electro-optical conversion device to provide light. The composite die 780 can be formed by providing a photonic integrated circuit die 700 and an electronic integrated circuit die 600. The photonic integrated circuit die 700 includes various types of photonic devices 750 known in the art, waveguides 740 that provide optical paths between the optical nodes of the various photonic devices 750, and a metal interconnect structure 770 configured to provide electrical signals to the respective electrical nodes of the photonic devices 750. The top side of the photonic integrated circuit die 700 may include pads configured for metal-to-metal bonding (such as copper-to-copper bonding), which are referred to herein as photonic integrated circuit metal bonding pads 710. The bottom side of the photonic integrated circuit die 700 may include a wafer bump structure 788, i.e., a bump structure formed on the die. The wafer bump structure 788 may include a micro-bump structure (i.e., a C2 bump structure) or a C4 bump structure. The metal interconnect structure 770 in the photonic integrated circuit die 700 provides an electrical connection between the photonic integrated circuit metal bonding pads 710 and the wafer bump structure 788. In some embodiments, the photonic integrated circuit die 700 may be made of semiconductor-on-insulator (SOI). Generally, an array of photonic integrated circuit dies 700 may be provided as a two-dimensional periodic array of photonic integrated circuit dies 700 in a wafer. The electronic integrated circuit die 600 includes semiconductor devices 620 that form an electronic integrated circuit. The semiconductor devices 620 may include field effect transistors, diodes, resistors, capacitors, inductors, or various other types of semiconductor devices that can be fabricated on a semiconductor substrate. Furthermore, a metal interconnect structure (not explicitly shown) may be provided in the electronic integrated circuit die 600 that is buried in a dielectric material layer containing an interlayer dielectric (ILD) material. In addition, the electronic integrated circuit die 600 may include metal bonding pads configured for metal-to-metal bonding, which are referred to herein as electronic integrated circuit metal bonding pads 690. The electronic integrated circuit metal bonding pads 690 may be arranged as a mirror image pattern of the pattern of the photonic integrated circuit metal bonding pads 710. According to an aspect of an embodiment of the present invention, the electronic integrated circuit die 600 may have a smaller lateral extent than the photonic integrated circuit die 700. Thus, when aligning the electronic integrated circuit die 600 with the photonic integrated circuit die 700 for metal-to-metal bonding between the photonic integrated circuit metal bonding pads 710 and the electronic integrated circuit metal bonding pads 690, the electronic integrated circuit die 600 may be assembled in the area of the photonic integrated circuit die 700 in a plan view. For example, the electronic integrated circuit die 600 can be attached to the photonic integrated circuit die 700 by a metal-to-metal bond (such as a copper-to-copper bond) that joins the electronic integrated circuit metal bonding pad 690 to the photonic integrated circuit metal bonding pad 710. In an embodiment providing a wafer that includes a two-dimensional array of photonic integrated circuit dies 700, a plurality of electronic integrated circuit dies 600 can be bonded to the corresponding photonic integrated circuit dies 700 in the two-dimensional array of photonic integrated circuit dies 700. An optical connector die 400 is provided. The optical connector die 400 includes a die substrate 410 (which can include a semiconductor material, such as silicon), a dielectric material layer 430 that embeds an optical deflector 460 (such as an in-die mirror 461), and waveguides 440 that extend laterally in a horizontal direction and are optically coupled to the optical deflector 460. In some embodiments, a grating coupler can replace the in-die mirror 461. The optical deflector 460 is configured to deflect a light beam between a vertically extending light beam path 99 that extends vertically through the die substrate 410 (which includes the vertically extending portion of the entire light beam path) and a horizontally extending light beam path 97 that extends laterally through a subset of the waveguides 440 in the optical connector die 400. The optical connector die 400 can be bonded to the top surface of the photonic integrated circuit die 700 either before or after bonding the electronic integrated circuit die 600 to the photonic integrated circuit die 700. In one embodiment, the optical connector die 400 can be bonded to the photonic integrated circuit die 700 by melting the dielectric material at surface portions of the photonic integrated circuit die 700 and the optical connector die 400. In this embodiment, a fusion bonding interface (FBI) can be formed at the interface between the photonic integrated circuit die 700 and the optical connector die 400. The light beam in the waveguides 440 in the optical connector die 400 can be optically coupled to the waveguides 740 in the photonic integrated circuit die 700 by evanescent coupling. The inter-die light beam path 96 is schematically shown in FIG. 1B. For example, a dielectric fill material such as a molding compound material, a polymer material, or a silicon oxide material (such as a flowable oxide) can be deposited in the gaps between adjacent pairs of electronic integrated circuit dies 600 above a wafer including a two-dimensional array of photonic integrated circuit dies 700. A planarization process such as a chemical mechanical polishing process can be performed to remove portions of the dielectric fill material above a horizontal plane including the top surface of the electronic integrated circuit dies 600. The remaining portion of the dielectric fill material includes a dielectric matrix 630. The dielectric matrix 630 can laterally surround the electronic integrated circuit dies 600 and the optical connector dies 400. Thus, the optical connector dies 400 become embedded in the dielectric matrix 630, and hereinafter the optical connector dies 400 are referred to as embedded optical connector dies. In one embodiment, the electronic integrated circuit dies 600, the optical connector dies 400, and the dielectric matrix 630 can have the same thickness. A semiconductor layer including optical lenses (a first substrate lens 612, a second substrate lens 614) can be attached to the top surface of a reconstructed wafer including a two-dimensional array of photonic integrated circuit dies 700, a two-dimensional array of electronic integrated circuit dies 600, and a dielectric matrix 630. The semiconductor layer serves as a support structure and is hereinafter referred to as a carrier semiconductor substrate 510. Thus, the carrier semiconductor substrate 510 can be formed above the electronic integrated circuit dies 600, the optical connector dies 400, and the dielectric matrix 630. The optical lenses (the first substrate lens 612, the second substrate lens 614) can be formed, for example, by forming a groove including a non-planar surface (such as a convex surface) in a beam path (such as a vertically extending beam path 99), and filling the groove with an optically transparent material such as silicon oxide. The optical lenses (the first substrate lens 612, the second substrate lens 614) can include a first substrate lens 612 (also referred to as a proximal substrate lens) formed on the proximal side (i.e., the side closer to the photonic integrated circuit dies 700) of the carrier semiconductor substrate 510 and a second substrate lens 614 (also referred to as a distal substrate lens) formed on the distal side (i.e., the side farther from the photonic integrated circuit dies 700) of the carrier semiconductor substrate 510. The optical lenses (the first substrate lens 612, the second substrate lens 614) can be used to focus a beam passing through the carrier semiconductor substrate 510. A substrate vias structure (not shown) can be optically formed through the carrier semiconductor substrate 510 to provide a vertically extending conductive path, which can be used to provide additional electrical connections to electrical nodes of the semiconductor device 620. The carrier semiconductor substrate 510 can be bonded to a combination of an array of electronic integrated circuit dies 600 and a dielectric substrate 630 through semiconductor-to-insulator bonding (such as silicon-to-oxide bonding or silicon-to-polymer bonding), or a thin layer of a semiconductor oxide layer (not shown) can be formed on the bottom surface of the carrier semiconductor substrate 510, for example, through oxidation, and oxide-to-insulator bonding can be used. Suitable thermal annealing at high temperature can be used to bond the carrier semiconductor substrate 510 to the combination of the array of electronic integrated circuit dies 600 and the dielectric substrate 630. The thickness of the carrier semiconductor substrate 510 can range from 5 µm to 30 µm, but smaller and larger thicknesses can also be used. An optically transparent dielectric layer 580 can be deposited on the top surface of the carrier semiconductor substrate 510. The optically transparent dielectric layer 580 can include a polymer or silicon oxide. The thickness of the optically transparent dielectric layer 580 can range from 1 µm to 10 µm, but smaller and larger thicknesses can also be used. The combination of the carrier semiconductor substrate 510 and the optically transparent dielectric layer 580 constitutes the substrate 500. As used herein, an optically transparent element refers to an element having an optical extinction coefficient (i.e., the imaginary part of the refractive index) less than 0.0001 in the wavelength range of light used in optical communication (such as a wavelength range of 500 nm to 2000 nm). The reconstructed wafer including a two-dimensional array of photonic integrated circuit dies 700, a two-dimensional array of electronic integrated circuit dies 600, a two-dimensional array of optical connector dies 400, a dielectric substrate 630, and a substrate 500 can be cut along a dicing channel to form a plurality of composite dies 780. Thus, each composite die 780 includes a corresponding photonic integrated circuit die 700, a corresponding electronic integrated circuit die 600, a corresponding optical connector die 400, a corresponding dielectric substrate 630, a corresponding carrier semiconductor substrate 510, and a corresponding optically transparent dielectric layer 580. In each composite die 780, the sidewalls of the photonic integrated circuit die 700 can be vertically coincident with the sidewalls of the dielectric substrate 630, the sidewalls of the carrier semiconductor substrate 510, and the sidewalls of the optically transparent dielectric layer 580, and can be vertically coincident with the sidewalls of the electronic integrated circuit die 600. As used herein, the first surface and the second surface are vertically coincident, for example, the second surface is located above or below the first surface, and for example, there is a vertical plane including the first surface and the second surface. The composite die 780 can be bonded to an interposer wafer including an array of interposers 800. Each interposer 800 can include, for example, an interposer via structure 850 extending vertically through the interposer substrate 857, die-side metal interconnect wiring 820 providing a conductive path, a die-side bump structure having a mirror image pattern of the die-on bump structure 788 and facing the composite die 780, and a substrate-side bump structure located on the opposite side of the die-side bump structure. In some embodiments, the substrate-side bump structure can include C4 bonding pads. The composite die 780 can be bonded to a corresponding one of the interposers 800 in the interposer wafer using an array of first solder material portions 790. A first underfill material portion 792 can be applied around each array of the first solder material portions 790 between the corresponding bonding pairs of the composite die 780 and the interposer 800. A molding compound material can be applied to the gaps between adjacent pairs of the composite dies 780. The excess portion of the molding compound material can be removed from above the horizontal plane including the top surface of the composite die 780 through a planarization process (such as a chemical mechanical polishing process). The remaining portion of the molding compound material constitutes the molding compound substrate. The reconstructed wafer including the interposer wafer, the array of composite dies 780, and the molding compound substrate can be diced along a dicing channel to form a bonding assembly including the composite die 780, the interposer 800, and the molding compound die frame 886. The sidewalls of the molding compound die frame 886 can be vertically coincident with the sidewalls of the packaging substrate 900. The bonding assembly (composite die 780, interposer 800, molding compound die frame 886) can be bonded to the packaging substrate 900 using an array of second solder material portions 890. The second solder material portions 890 can include microbump solder balls or C4 solder balls. A second underfill material portion 892 can be formed around the second solder material portions 890 between the interposer 800 and the packaging substrate 900. The optical connector unit 100 can be attached to the composite die 780 before or after attaching the solder joints 990 to the packaging substrate 900. The bonding assembly (composite die 780, interposer 800, molding compound die frame 886) can include a photonics assembly (i.e., an assembly including photonics devices therein), and the photonics assembly includes the composite die 780. The composite die 780 includes at least one optical path, and the optical path includes a vertically extending beam path 99 that extends from an optical deflector 460 buried in the photonics integrated circuit die 700 through the dielectric substrate 630, through the carrier semiconductor substrate 510 and at least one optical lens (first substrate lens 612, second substrate lens 614) thereon, and into the optically transparent dielectric layer 580. At least one optical fiber 140 may be attached to a portion of the top surface of the composite die 780 that intersects the vertically extending beam path 99. For example, at least one optical fiber 140 may be attached to a portion of the top surface of the optically transparent dielectric layer 580 that intersects the vertically extending beam path 99. In some embodiments, the optical deflector 460 may extend in a horizontal direction (e.g., a horizontal direction perpendicular to the vertical cross-section of the schematic cross-sectional views of FIGS. 1A and 1B), and a plurality of optical fibers 140 may be attached to the top surface of the composite die 780. FIGS. 1C through 1F are schematic vertical cross-sectional views of various alternative configurations of the first embodiment structure. Referring to FIG. 1C, a first alternative configuration of the first embodiment structure may be derived from the first embodiment structure shown in FIGS. 1A and 1B by using an interposer 800 having a larger lateral extent than the composite die 780, and attaching additional semiconductor dies such as an application-specific integrated circuit (ASIC) die 781 and a memory die 782 to the interposer 800 through an additional array of first solder material portions 790. In one embodiment, an additional first underfill material portion 792 may be formed around the additional semiconductor dies (ASIC die 781, memory die 782), and a molded compound die frame 886 may laterally surround the composite die 780 and the additional semiconductor dies (ASIC die 781, memory die 782). The sidewalls of the molded compound die frame 886 may be vertically coincident with the sidewalls of the interposer 800. The optical connector unit 100 may be attached to the composite die 780 before or after attaching the solder joints 990 to the package substrate 900. This at least one optical fiber 140 may be attached to the composite die 780 before or after attaching the solder joints 990 to the package substrate 900. Referring to FIG. 1D, a second alternative configuration of the first embodiment structure can be derived from the first embodiment structure shown in FIGS. 1A and 1B by using a packaging substrate 900 having a larger lateral extent than the composite die 780, attaching the composite die 780 to the packaging substrate 900 through an array of first solder material portions 790, and forming a first underfill material portion around the array of first solder material portions 790. Additional semiconductor dies such as application-specific integrated circuit (ASIC) die 781 and memory die 782 can be attached to the interposer 800 through an additional array of first solder material portions 790. In one embodiment, an additional first underfill material portion 792 can be formed around the additional semiconductor dies (ASIC die 781, memory die 782), and a molded compound die frame 886 can be formed around the additional semiconductor dies (ASIC die 781, memory die 782). The sidewalls of the molded compound die frame 886 can be perpendicularly coincident with the sidewalls of the interposer 800. The interposer 800 can be attached to the packaging substrate 900 through an array of second solder material portions 890. A second underfill material portion 892 can be formed around the combination of the additional semiconductor dies (ASIC die 781, memory die 782), the interposer 800, and the molded compound die frame 886. The combination of the additional semiconductor dies (ASIC die 781, memory die 782), the interposer 800, and the molded compound die frame 886 can be located adjacent to the composite die 780 above the packaging substrate 900. The optical fiber 140 can be attached to the composite die 780 before or after attaching the solder joints 990 to the packaging substrate 900. Referring to FIG. 1E, a third alternative configuration of the first embodiment structure can be derived from the first embodiment structure shown in FIGS. 1A and 1B by using a composite interposer 800 that includes at least one embedded local interconnect die 840 as the interposer. In this embodiment, the interposer 800 can include at least one embedded local interconnect die 840 (e.g., a silicon interconnect die including a silicon substrate, a substrate via structure, and metal interconnect structures embedded in a dielectric material layer), interposer via structures 825 located adjacent to and / or between at least one embedded local interconnect die 840, an interposer molding compound frame 847 embedding at least one embedded local interconnect die 840 and the interposer via structures 825, and die side metal interconnect wirings 820 electrically connected to the at least one embedded local interconnect die 840 and electrically connected to the interposer via structures 825 through microbump structures 829. The composite die 780 and additional semiconductor dies (application specific integrated circuit die 781, memory die 782) can be attached to the interposer 800 through corresponding arrays of first solder material portions 790. A first underfill material portion 792 can laterally surround the arrays of first solder material portions 790. A molding compound die frame 886 can laterally surround the composite die 780 and additional semiconductor dies (application specific integrated circuit die 781, memory die 782). The sidewalls of the molding compound die frame 886 can be vertically coincident with the sidewalls of the interposer 800. The components of the interposer 800, the composite die 780, the additional semiconductor dies (application specific integrated circuit die 781, memory die 782), and the molding compound die frame 886 can be attached to the package substrate 900 through an array of second solder material portions 890. A second underfill material portion 892 can laterally surround the arrays of second solder material portions 890. The optical fiber 140 can be attached to the composite die 780 before or after attaching the solder joints 990 to the package substrate 900. Referring to FIG. 1F, a fourth alternative configuration of the first embodiment structure can be derived from the first embodiment structure shown in FIGS. 1A and 1B by using a composite interposer 800 that includes a package-side metal interconnect wiring 860 as the interposer 800. In this embodiment, the interposer 800 may include at least one embedded local interconnect die 840 (e.g., a silicon interconnect die including a silicon substrate, a substrate via structure, and a metal interconnect structure embedded in a dielectric material layer), an interposer via structure 825 adjacent to and / or between at least one embedded local interconnect die 840, an interposer molding compound frame 847 embedding at least one embedded local interconnect die 840 and the interposer via structure 825, a die-side metal interconnect wiring 820 electrically connected to the at least one embedded local interconnect die 840 through a microbump structure 829 and electrically connected to the interposer via structure 825, and a package-side metal interconnect wiring 860 located on the opposite side of the die-side metal interconnect wiring 820. The composite die 780 and additional semiconductor dies (application specific integrated circuit die 781, memory die 782) can be attached to the interposer 800 through a corresponding array of first solder material portions 790. A first underfill material portion 792 can laterally surround the array of first solder material portions 790. A molding compound die frame 886 can laterally surround the composite die 780 and additional semiconductor dies (application specific integrated circuit die 781, memory die 782). The sidewalls of the molding compound die frame 886 can be vertically coincident with the sidewalls of the interposer 800. A wafer including a two-dimensional array of interposers 800 can be provided, and a set of composite die 780 and additional semiconductor dies (application specific integrated circuit die 781, memory die 782) can be attached to each interposer 800. The first underfill material portion 792 can be formed to surround each set of composite die 780 and additional semiconductor dies (application specific integrated circuit die 781, memory die 782) above the interposer 800 formed in the two-dimensional array of interposers 800. A first molding compound material can be formed above the wafer including the two-dimensional array of interposers 800, and the first molding compound material can be planarized to form a first molding compound matrix. The packaging substrate 900 can be attached to a corresponding interposer 800 through a corresponding array of the second solder material portions 890. Each packaging substrate 900 can have an area smaller than that of the interposer 800 to which the packaging substrate 900 is attached. Each packaging substrate 900 can include die-side interconnect traces 920 on the die side and substrate-side interconnect traces 950 on the substrate side. Furthermore, each packaging substrate 900 can include a substrate via structure 930 buried in the insulating substrate 940 and providing an electrical connection between the die-side interconnect traces 920 and the substrate-side interconnect traces 950. A second molding compound material can be formed under the wafer including the two-dimensional array of interposers 800, and the second molding compound material can be planarized to form a second molding compound matrix. The wafer, a two-dimensional array of groups of dies (composite dies 780, application-specific integrated circuit dies 781, memory dies 782), a two-dimensional array of packaging substrates 900, a combination of the first molding compound matrix and the second molding compound matrix can be cut along the dicing channels to form the photon components. Each photon component includes a composite die 780, additional semiconductor dies (application-specific integrated circuit dies 781, memory dies 782), a first underfill material portion 792, a molding compound die frame 886 (a cut portion of the first molding compound matrix), a packaging substrate 900, and a molding compound substrate frame 986 (a cut portion of the second molding compound matrix). The optical fiber 140 can be attached to the composite die 780 before or after attaching the solder joints 990 to the packaging substrate 900. Generally, a photonic integrated circuit (PIC) die 700 including a waveguide 740 and a photonic device 750 can be provided. An electronic integrated circuit (EIC) die 600 including a semiconductor device 620 can be bonded to the photonic integrated circuit die 700. An optical connector die 400 including an optical element (such as an optical deflector 460) can be attached to the photonic integrated circuit die 700. A dielectric matrix 630 can be formed directly on the sidewall of the electronic integrated circuit die 600 to surround the optical connector die 400. A carrier semiconductor substrate 510 can be attached to the assembly including the electronic integrated circuit die 600, the optical connector die 400, and the dielectric matrix 630. The carrier semiconductor substrate 510 is above the electronic integrated circuit die 600 and the optical connector die 400. In one embodiment, the optical connector die 400 contacts the bottom surface of the carrier semiconductor substrate 510. The composite die 780 can be formed. In some embodiments, the first substrate lens 612 may be embedded on a first side of the carrier semiconductor substrate 510 facing components (photonic integrated circuit die 700, electronic integrated circuit die 600, optical connector die 400, dielectric substrate 630). In some embodiments, the second substrate lens 614 may be embedded on a second side of the carrier semiconductor substrate 510 relative to the first side. In some embodiments, the optical element in the optical connector die 400 includes an optical deflector 460 configured to change the beam direction between the vertically extending beam path 99 in the composite die 780 and the horizontally extending beam path 97 in the waveguide 440 in the optical connector die 400. The vertically extending beam path 99 extends through the carrier semiconductor substrate 510. With reference to FIGS. 1A-1F together, a photonic component including a composite die 780 is provided. The composite die 780 includes: a photonic integrated circuit (PIC) die 700 including waveguides 740 and photonic devices 750, an electronic integrated circuit (EIC) die 600 including semiconductor devices 620, and an optical connector die 400 that contacts the top surface of the photonic integrated circuit die 700 and is laterally spaced apart from the electronic integrated circuit die 600. In one embodiment, the vertically extending beam path 99 is entirely outside or above the photonic integrated circuit die 700. The optical deflector 460 in the optical connector die 400 may be configured to change the beam direction between the vertically extending beam path 99 and the horizontally extending beam path 97 in the horizontally extending waveguide in the photonic integrated circuit die 700. According to an aspect of an embodiment of the present invention, the composite die 780 includes: a photonic integrated circuit (PIC) die 700 including waveguides 740 and photonic devices 750, an electronic integrated circuit (EIC) die 600 including semiconductor devices 620, a carrier semiconductor substrate 510 above the photonic integrated circuit die 700 and the electronic integrated circuit die 600, wherein the composite die 780 is configured to provide a vertically extending beam path 99 extending through the carrier semiconductor substrate 510 and an optical connector die 400 including an optical element located in or at one end of the vertically extending beam path 99. In one embodiment, the optical element includes an optical deflector 460 configured to change the beam direction between the vertically extending beam path 99 in the composite die 780 and the horizontally extending beam path 97 in the waveguide 440 in the optical connector die 400. In one embodiment, the top surface of the electronic integrated circuit die 600 contacts a first section of the bottom surface of the carrier semiconductor substrate 510, and the top surface of the optical connector die 400 contacts a second section of the bottom surface of the carrier semiconductor substrate 510. In one embodiment, the bottom surface of the electronic integrated circuit die 600 contacts a first section of the top surface of the photonic integrated circuit die 700, the bottom surface of the optical connector die 400 contacts a second section of the top surface of the photonic integrated circuit die 700, and the electronic integrated circuit die 600 is laterally surrounded by a dielectric matrix that contacts the sidewalls of the electronic integrated circuit die 600. FIG. 2A is a vertical cross-sectional schematic view of a first embodiment of a mirror in the optical connector die 400 according to one aspect of the present disclosure. FIG. 2B is a vertical cross-sectional schematic view of a second embodiment of a mirror in the optical connector die 400 according to one aspect of the present disclosure. Referring to FIG. 2A, a first configuration for the die mirror 461 is shown. In one embodiment, the die mirror 461 may include a metal-coated mirror 461A, and the metal-coated mirror 461A includes a metal coating, such as a layer stack of Cu / Al / Ta, a metal coating of an Al-Cu compound, an Al-Cu-Si compound, etc. Referring to FIG. 2B, a second configuration for the die mirror 461 is shown. In one embodiment, the die mirror 461 may include a superlattice 461B of dielectric material layers, where the repeating unit includes at least two dielectric material layers that are periodically repeated to maximize the reflectivity at the beam wavelength. The total number of repetitions of the repeating unit may range from 2 to 20, but larger numbers may also be used. FIG. 3A is a vertical cross-sectional schematic view of a second embodiment structure of an embodiment of the present invention according to one aspect of the present disclosure. FIG. 3B is an enlarged view of a part of the second embodiment structure of FIG. 3A. FIGS. 3C, 3D, 3E, and 3F are vertical cross-sectional schematic views of various alternative configurations of the second embodiment structure. Referring to FIGS. 3A and 3B, the second embodiment structure can be derived from the first embodiment structure shown in FIGS. 1A and 1B by changing the optical connector die 400 embedded in the dielectric substrate 630. Specifically, the optical connector die 400 includes metal bonding pads, which are herein referred to as connector-to-die metal bonding pads 490 and / or first metal bonding pads. The connector-to-die metal bonding pads 490 are embedded in the dielectric material layer 430 of the optical connector die 400. The connector-to-die metal bonding pads 490 include a metal, such as copper, which can form a metal-to-metal bond. The pattern of the connector-to-die metal bonding pads 490 can be a mirror image of a subset of the photon integrated circuit metal bonding pads 710. In one embodiment, the connector-to-die metal bonding pads 490 and the photon integrated circuit metal bonding pads 710 can include and / or can essentially include metal barrier liners (comprising metal barrier materials such as TiN, TaN, WN, MoN, etc.) and metal bonding materials (such as copper). In the claims, the connector-to-die metal bonding pads 490 can be referred to as the first metal bonding pads, and the photon integrated circuit metal bonding pads 710 can be referred to as the second metal bonding pads. Generally, the connector-to-die metal bonding pads 490 can be arranged around the optical deflector 460 and the waveguide 440 in a manner that does not interfere with the functionality of the optical deflector 460 and the waveguide 440. Furthermore, the photon integrated circuit metal bonding pads 710 can be arranged around the waveguide 740 in the photon integrated circuit die 700 such that the photon integrated circuit metal bonding pads 710 do not interfere with the functionality of the waveguide 740 in the photon integrated circuit die 700. The optical connector die 400 can be bonded to the photon integrated circuit die 700 through a metal-to-metal bond between the connector-to-die metal bonding pads 490 and the photon integrated circuit metal bonding pads 710. Optical signals can be transmitted through the waveguide 440 in the optical connector die 400 and the waveguide 740 in the photon integrated circuit die 700 through evanescent coupling. Furthermore, the dielectric material layer in the photon integrated circuit die 700 can be bonded to the dielectric material layer 430 in the optical connector die 400 through a dielectric-to-dielectric bond (such as a silicon oxide-to-silicon oxide bond). In this embodiment, a hybrid bonding interface (HBI) of metal-to-metal bond and dielectric-to-dielectric bond can be formed between the photon integrated circuit die 700 and the optical connector die 400. Thereafter, the dielectric substrate 630 can be formed around the electronic integrated circuit die 600 and the optical connector die 400, and the optical connector die 400 becomes an embedded optical connector die. Thereafter, the carrier semiconductor substrate 510 can be formed over the components of the electronic integrated circuit die 600, the optical connector die 400, and the dielectric substrate 630. FIG. 3C to FIG. 3F are schematic vertical cross-sectional views of various alternative configurations of the second embodiment structure. Referring to FIG. 3C, the first alternative configuration of the second embodiment structure can be derived from the first alternative configuration of the first embodiment structure shown in FIGS. 1A to 1C, by using the optical connector die 400 described with reference to FIGS. 3A and 3B to replace the optical connector die 400 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 3D, the second alternative configuration of the second embodiment structure can be derived from the second alternative configuration of the first embodiment structure shown in FIG. 1D, by using the optical connector die 400 described with reference to FIGS. 3A and 3B to replace the optical connector die 400 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 3E, the third alternative configuration of the second embodiment structure can be derived from the third alternative configuration of the first embodiment structure shown in FIG. 1E, by using the optical connector die 400 described with reference to FIGS. 3A and 3B to replace the optical connector die 400 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 3F, the fourth alternative configuration of the second embodiment structure can be derived from the fourth alternative configuration of the first embodiment structure shown in FIG. 1F, by using the optical connector die 400 described with reference to FIGS. 3A and 3B to replace the optical connector die 400 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. FIG. 4A is a schematic vertical cross-sectional view of a third embodiment structure of an embodiment of the present invention according to an aspect of the present disclosure. FIG. 4B is an enlarged view of a part of the third embodiment structure of FIG. 4A. FIGS. 4C, 4D, 4E, and 4F are schematic vertical cross-sectional views of various alternative configurations of the third embodiment structure. Referring to FIGS. 4A and 4B, the structure of the third embodiment can be derived from the structure of the first embodiment shown in FIGS. 1A and 1B by forming at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die) in the optical connector die 400 such that at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die) is located in the vertically extending beam path 99 in the composite die 780. This at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die) can be formed in the die substrate 410, for example, by forming a first profiled cavity having a first convex end surface on a first side of the die substrate 410 (e.g., the proximal side contacting the dielectric material layer 430 of the optical connector die 400), forming a second profiled cavity having a second convex end surface on a second side of the die substrate 410 (e.g., the distal side contacting the carrier semiconductor substrate 510), and filling the first profiled cavity and the second profiled cavity with a dielectric material (such as silicon oxide or a polymer material). The optical lens 412 in the first die (also referred to as the proximal die optical lens) can be formed in the first profiled cavity, and the optical lens 414 in the second die (also referred to as the distal die optical lens) can be formed in the second profiled cavity. Generally, the optical connector die 400 includes optical elements located in the vertically extending beam path 99 or at one end of the vertically extending beam path 99. In the structure of the third embodiment, the optical elements include at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die) and an optical deflector 460, this at least one optical lens being configured to focus the beam in the vertically extending beam path 99, and the optical deflector 460 includes a die mirror 461. A fusion bonding interface (FBI) can be formed between the optical connector die 400 and the photonic integrated circuit die 700. FIGS. 4C to 4F are schematic vertical cross-sectional views of various alternative configurations of the third embodiment structure. Referring to FIG. 4C, the first alternative configuration of the third embodiment structure can be derived from the first alternative configuration of the first embodiment structure shown in FIG. 1C by using the optical connector die 400 described with reference to FIGS. 4A and 4B to replace the optical connector die 400 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 4D, the second alternative configuration of the third embodiment structure can be derived from the second alternative configuration of the first embodiment structure shown in FIG. 1D by using the optical connector die 400 described with reference to FIGS. 4A and 4B to replace the optical connector die 400 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 4E, a third alternative configuration of the third embodiment structure can be derived from the third alternative configuration of the first embodiment structure shown in FIG. 1E by using the optical connector die 400 described with reference to FIGS. 4A and 4B to replace the optical connector die 400 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 4F, a fourth alternative configuration of the third embodiment structure can be derived from the fourth alternative configuration of the first embodiment structure shown in FIG. 1F by using the optical connector die 400 described with reference to FIGS. 4A and 4B to replace the optical connector die 400 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. FIG. 5A is a schematic vertical cross-sectional view of a fourth embodiment structure of an embodiment of the present invention according to an aspect of the present disclosure. FIG. 5B is an enlarged view of a part of the fourth embodiment structure of FIG. 5A. FIGS. 5C, 5D, 5E, and 5F are schematic vertical cross-sectional views of various alternative configurations of the fourth embodiment structure. Referring to FIGS. 5A and 5B, the fourth embodiment structure can be derived from the third embodiment structure shown in FIGS. 4A and 4B by changing the optical connector die 400 buried in the dielectric substrate 630 to include connector-to-die metal bonding pads 490. The connector-to-die metal bonding pads 490 are buried in the dielectric material layer 430 of the optical connector die 400. The connector-to-die metal bonding pads 490 include a metal, such as copper that can form a metal-to-metal bond. The pattern of the connector-to-die metal bonding pads 490 can be a mirror image of a subset of the photonic integrated circuit metal bonding pads 710. Generally, the connector-to-die metal bonding pads 490 and the photonic integrated circuit metal bonding pads 710 can have the same configuration as the second embodiment structure described with reference to FIGS. 3A and 3B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by a metal-to-metal bond between the connector-to-die metal bonding pads 490 and the photonic integrated circuit metal bonding pads 710. Optical signals can be transmitted through the waveguide 440 in the optical connector die 400 and the waveguide 740 in the photonic integrated circuit die 700 by evanescent coupling. Furthermore, the dielectric material layer in the photonic integrated circuit die 700 can be joined to the dielectric material layer 430 in the optical connector die 400 by a dielectric-to-dielectric bond (such as a silicon oxide-to-silicon oxide bond). In this embodiment, a hybrid bonding interface (HBI) with both metal-to-metal and dielectric-to-dielectric bonds can be formed between the photonic integrated circuit die 700 and the optical connector die 400. Thereafter, a dielectric substrate 630 can be formed around the electronic integrated circuit die 600 and the optical connector die 400, and the optical connector die 400 becomes an embedded optical connector die. Thereafter, a carrier semiconductor substrate 510 can be formed over the components of the electronic integrated circuit die 600, the optical connector die 400, and the dielectric substrate 630. Figures 5C to 5F are schematic vertical cross-sectional views of various alternative configurations of the structure of the fourth embodiment. Referring to Figure 5C, a first alternative configuration of the structure of the fourth embodiment can be derived from the first alternative configuration of the structure of the third embodiment shown in Figure 4C by using the optical connector die 400 described with reference to Figures 5A and 5B to replace the optical connector die 400 described with reference to Figures 4A and 4B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by a hybrid bond to form a hybrid bonding interface. Referring to Figure 5D, a second alternative configuration of the structure of the fourth embodiment can be derived from the second alternative configuration of the structure of the third embodiment shown in Figure 4D by using the optical connector die 400 described with reference to Figures 5A and 5B to replace the optical connector die 400 described with reference to Figures 4A and 4B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by a hybrid bond to form a hybrid bonding interface. Referring to Figure 5E, a third alternative configuration of the structure of the fourth embodiment can be derived from the third alternative configuration of the structure of the third embodiment shown in Figure 4E by using the optical connector die 400 described with reference to Figures 5A and 5B to replace the optical connector die 400 described with reference to Figures 4A and 4B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by a hybrid bond to form a hybrid bonding interface. Referring to FIG. 5F, a fourth alternative configuration of the structure of the fourth embodiment can be derived from the fourth alternative configuration of the structure of the third embodiment shown in FIG. 4F by using the optical connector die 400 described with reference to FIGS. 5A and 5B to replace the optical connector die 400 described with reference to FIGS. 4A and 4B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 by hybrid bonding to form a hybrid bonding interface. FIG. 6A is a schematic vertical cross-sectional view of the structure of a fifth embodiment of an embodiment of the present invention according to an aspect of the present disclosure. FIG. 6B is an enlarged view of a part of the structure of the fifth embodiment of FIG. 6A. FIGS. 6C, 6D, 6E, and 6F are schematic vertical cross-sectional views of various alternative configurations of the structure of the fifth embodiment. Referring to FIGS. 6A and 6B, the structure of the fifth embodiment can be derived from the structure of the third embodiment shown in FIGS. 4A and 4B by forming an optical deflector 760 in the photonic integrated circuit die 700. The optical deflector 760 can include a grating coupler 762, and the grating coupler 762 can be an end of a waveguide 740 in the photonic integrated circuit die 700 or optically coupled to a waveguide 740 in the photonic integrated circuit die 700. In an alternative embodiment, a die mirror having the same configuration as the die mirror 461 in the above-described die can replace the grating coupler 762, but is buried in a dielectric material layer of the photonic integrated circuit die 700. The grating coupler 762 includes a grating having a periodicity in the horizontal direction. Generally, the grating coupler 762 can be used to effectively couple light between the waveguide 740 in the photonic integrated circuit die 700 and a vertically propagating light beam propagating through the upper portion of the photonic integrated circuit die 700. The grating coupler 762 can include a periodic pattern of alternating transparent and opaque portions. The periodicity of the periodic pattern is selected to maximize the coupling of light at the wavelength of the light used for photonic signal transmission. When light encounters the grating of the grating coupler 762 from the vertical direction, the light is scattered. The size of the grating can be selected such that the light constructively interferes only in the direction of the waveguide 740. The same principle applies to the light leaving the waveguide 740 and striking the grating coupler 762, and constructive interference occurs only in the vertical direction (i.e., the direction of light emission). The optical connector die 400 includes a die substrate 410 (which may include semiconductor material, such as silicon) and a dielectric material layer 430 located on a horizontal surface of the die substrate 410. The optical connector die 400 includes at least one optical element, such as at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die). In one embodiment, at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die) is located in a vertically extending beam path 99 in the composite die 780. This at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die) can be formed in the same manner as described with reference to FIGS. 4A and 4B. Generally, the optical connector die 400 includes an optical element located in or at one end of the vertically extending beam path 99. In the structure of the fifth embodiment, the optical element includes at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die), and this at least one optical lens is configured to focus the beam in the vertically extending beam path 99. A fusion bonding interface (FBI) can be formed between the optical connector die 400 and the photonic integrated circuit die 700. In the structure of the fifth embodiment, the photonic integrated circuit die 700 includes an optical deflector 460. The optical deflector 460 is located at one end of the vertically extending beam path 99 and is configured to change the beam direction between the vertically extending beam path 99 and a horizontally extending beam path 97 in a waveguide in the photonic integrated circuit die 700. The optical connector die 400 includes at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die) located in the vertically extending beam path 99 in the composite die 780. FIGS. 6C to 6F are schematic vertical cross-sectional views of various alternative configurations of the structure of the fifth embodiment. Referring to FIG. 6C, the first alternative configuration of the structure of the fifth embodiment can be derived from the first alternative configuration of the structure of the first embodiment shown in FIG. 1C by using the composite die 780 described with reference to FIGS. 6A and 6B to replace the composite die 780 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by fusion bonding to form a fusion bonding interface. Referring to FIG. 6D, the second alternative configuration of the structure of the fifth embodiment can be derived from the second alternative configuration of the structure of the first embodiment shown in FIG. 1D by using the composite die 780 described with reference to FIGS. 6A and 6B to replace the composite die 780 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by fusion bonding to form a fusion bonding interface. Referring to FIG. 6E, a third alternative configuration of the fifth embodiment structure can be derived from the third alternative configuration of the first embodiment structure shown in FIG. 1E by using the composite die 780 described with reference to FIGS. 6A and 6B to replace the composite die 780 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by fusion bonding to form a fusion interface. Referring to FIG. 6F, a fourth alternative configuration of the fifth embodiment structure can be derived from the fourth alternative configuration of the first embodiment structure shown in FIG. 1F by using the composite die 780 described with reference to FIGS. 6A and 6B to replace the composite die 780 described with reference to FIGS. 1A and 1B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by fusion bonding to form a fusion interface. FIG. 7A is a schematic vertical cross-sectional view of a sixth embodiment structure of an embodiment of the present invention according to one aspect of the present disclosure. FIG. 7B is an enlarged view of a part of the sixth embodiment structure of FIG. 7A. FIGS. 7C, 7D, 7E, and 7F are schematic vertical cross-sectional views of various alternative configurations of the sixth embodiment structure. Referring to FIGS. 7A and 7B, the sixth embodiment structure can be derived from the fifth embodiment structure shown in FIGS. 6A and 6B by changing the optical connector die 400 buried in the dielectric substrate 630 to include connector-to-die metal bonding pads 490. The connector-to-die metal bonding pads 490 are buried in the dielectric material layer 430 of the optical connector die 400. The connector-to-die metal bonding pads 490 include a metal, such as copper, which can form a metal-to-metal bond. The pattern of the connector-to-die metal bonding pads 490 can be a mirror image of a subset of the photonic integrated circuit metal bonding pads 710. Generally, the connector-to-die metal bonding pads 490 and the photonic integrated circuit metal bonding pads 710 can have the same configuration as the second embodiment structure described with reference to FIGS. 3A and 3B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by a metal-to-metal bond between the connector-to-die metal bonding pads 490 and the photonic integrated circuit metal bonding pads 710. Furthermore, the dielectric material layer in the photonic integrated circuit die 700 can be joined to the dielectric material layer 430 in the optical connector die 400 by a dielectric-to-dielectric bond (such as a silicon oxide-to-silicon oxide bond). In this embodiment, a hybrid bonding interface (HBI) of metal-to-metal bond and dielectric-to-dielectric bond can be formed between the photonic integrated circuit die 700 and the optical connector die 400. Thereafter, the dielectric substrate 630 can be formed around the electronic integrated circuit die 600 and the optical connector die 400, and the optical connector die 400 becomes an embedded optical connector die. Thereafter, the carrier semiconductor substrate 510 can be formed over the components of the electronic integrated circuit die 600, the optical connector die 400, and the dielectric substrate 630. FIG. 7C to FIG. 7F are schematic vertical cross-sectional views of various alternative configurations of the structure of the sixth embodiment. Referring to FIG. 7C, a first alternative configuration of the structure of the sixth embodiment can be derived from the first alternative configuration of the structure of the fifth embodiment shown in FIG. 6C, by using the optical connector die 400 described with reference to FIGS. 7A and 7B to replace the optical connector die 400 described with reference to FIGS. 6A and 6B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 7D, a second alternative configuration of the structure of the sixth embodiment can be derived from the second alternative configuration of the structure of the fifth embodiment shown in FIG. 6D, by using the optical connector die 400 described with reference to FIGS. 7A and 7B to replace the optical connector die 400 described with reference to FIGS. 6A and 6B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 7E, a third alternative configuration of the structure of the sixth embodiment can be derived from the third alternative configuration of the structure of the fifth embodiment shown in FIG. 6E, by using the optical connector die 400 described with reference to FIGS. 7A and 7B to replace the optical connector die 400 described with reference to FIGS. 6A and 6B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 7F, a fourth alternative configuration of the structure of the sixth embodiment can be derived from the fourth alternative configuration of the structure of the fifth embodiment shown in FIG. 6F, by using the optical connector die 400 described with reference to FIGS. 7A and 7B to replace the optical connector die 400 described with reference to FIGS. 6A and 6B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. FIG. 8A is a schematic vertical cross-sectional view of the structure of the seventh embodiment of an embodiment of the present invention according to an aspect of the present disclosure. FIG. 8B is an enlarged view of a part of the structure of the seventh embodiment of FIG. 8A. FIGS. 8C, 8D, 8E, and 8F are schematic vertical cross-sectional views of various alternative configurations of the structure of the seventh embodiment. Referring to FIGS. 8A and 8B, the structure of the seventh embodiment can be derived from the structure of the sixth embodiment shown in FIGS. 7A and 7B by using the in-grain mirror 761 as the optical deflector 760. The in-grain mirror 761 can be buried in the dielectric material layer 730 in the photonic integrated circuit die 700 and can be disposed adjacent to at least one waveguide 740 in the photonic integrated circuit die 700. This at least one waveguide 740 adjacent to the in-grain mirror 761 can have the configuration of a transition edge coupler to enhance the optical coupling between the at least one waveguide 740 and the in-grain mirror 761. This in-grain mirror 761 can have any configuration similar to or dissimilar to the in-grain mirror 461 described with reference to FIGS. 2A and 2B. FIGS. 8C to 8F are schematic vertical cross-sectional views of various alternative configurations of the structure of the seventh embodiment. Referring to FIG. 8C, the first alternative configuration of the structure of the seventh embodiment can be derived from the first alternative configuration of the structure of the sixth embodiment shown in FIG. 7C by using the composite die 780 described with reference to FIGS. 8A and 8B to replace the composite die 780 described with reference to FIGS. 7A and 7B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by fusion bonding to form a fusion interface. Referring to FIG. 8D, the second alternative configuration of the structure of the seventh embodiment can be derived from the second alternative configuration of the structure of the sixth embodiment shown in FIG. 7D by using the composite die 780 described with reference to FIGS. 8A and 8B to replace the composite die 780 described with reference to FIGS. 7A and 7B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by fusion bonding to form a fusion interface. Referring to FIG. 8E, the third alternative configuration of the structure of the seventh embodiment can be derived from the third alternative configuration of the structure of the sixth embodiment shown in FIG. 7E by using the composite die 780 described with reference to FIGS. 8A and 8B to replace the composite die 780 described with reference to FIGS. 7A and 7B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by fusion bonding to form a fusion interface. Referring to FIG. 8F, the fourth alternative configuration of the structure of the seventh embodiment can be derived from the fourth alternative configuration of the structure of the sixth embodiment shown in FIG. 7F by using the composite die 780 described with reference to FIGS. 8A and 8B to replace the composite die 780 described with reference to FIGS. 7A and 7B. The optical connector die 400 can be joined to the photonic integrated circuit die 700 by fusion bonding to form a fusion interface. FIG. 9A is a schematic vertical cross-sectional view of the structure of the eighth embodiment of the present invention according to an aspect of the present disclosure. FIG. 9B is an enlarged view of a part of the structure of the eighth embodiment in FIG. 9A. FIGS. 9C, 9D, 9E, 9F are schematic vertical cross-sectional views of various alternative configurations of the structure of the eighth embodiment. Referring to FIGS. 9A and 9B, the structure of the eighth embodiment can be derived from the structure of the seventh embodiment shown in FIGS. 8A and 8B by changing the optical connector die 400 embedded in the dielectric substrate 630 to include connector-to-die metal bonding pads 490. The connector-to-die metal bonding pads 490 are embedded in the dielectric material layer 430 of the optical connector die 400. The connector-to-die metal bonding pads 490 include a metal, such as copper that can form a metal-to-metal bond. The pattern of the connector-to-die metal bonding pads 490 can be a mirror image of a subset of the photon integrated circuit metal bonding pads 710. Generally, the connector-to-die metal bonding pads 490 and the photon integrated circuit metal bonding pads 710 can have the same configuration as the structure of the second embodiment described with reference to FIGS. 3A and 3B. The optical connector die 400 can be bonded to the photon integrated circuit die 700 through a metal-to-metal bond between the connector-to-die metal bonding pads 490 and the photon integrated circuit metal bonding pads 710. Furthermore, the dielectric material layer in the photon integrated circuit die 700 can be bonded to the dielectric material layer 430 in the optical connector die 400 through a dielectric-to-dielectric bond (such as a silicon oxide-to-silicon oxide bond). In this embodiment, a hybrid bonding interface (HBI) of metal-to-metal bond and dielectric-to-dielectric bond can be formed between the photon integrated circuit die 700 and the optical connector die 400. Thereafter, the dielectric substrate 630 can be formed around the electronic integrated circuit die 600 and the optical connector die 400, and the optical connector die 400 becomes an embedded optical connector die. Thereafter, the carrier semiconductor substrate 510 can be formed over the components of the electronic integrated circuit die 600, the optical connector die 400, and the dielectric substrate 630. FIGS. 9C to 9F are schematic vertical cross-sectional views of various alternative configurations of the structure of the eighth embodiment. Referring to FIG. 9C, the first alternative configuration of the structure of the eighth embodiment can be derived from the first alternative configuration of the structure of the seventh embodiment shown in FIG. 8C by using the optical connector die 400 described with reference to FIGS. 9A and 9B to replace the optical connector die 400 described with reference to FIGS. 8A and 8B. The optical connector die 400 can be bonded to the photon integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 9D, the second alternative configuration of the structure of the eighth embodiment can be derived from the second alternative configuration of the structure of the seventh embodiment shown in FIG. 8D by using the optical connector die 400 described with reference to FIGS. 9A and 9B to replace the optical connector die 400 described with reference to FIGS. 8A and 8B. The optical connector die 400 can be bonded to the photon integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 9E, a third alternative configuration of the eighth embodiment structure can be derived from the third alternative configuration of the seventh embodiment structure shown in FIG. 8E by using the optical connector die 400 described with reference to FIGS. 9A and 9B to replace the optical connector die 400 described with reference to FIGS. 8A and 8B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. Referring to FIG. 9F, a fourth alternative configuration of the eighth embodiment structure can be derived from the fourth alternative configuration of the seventh embodiment structure shown in FIG. 8F by using the optical connector die 400 described with reference to FIGS. 9A and 9B to replace the optical connector die 400 described with reference to FIGS. 8A and 8B. The optical connector die 400 can be bonded to the photonic integrated circuit die 700 through hybrid bonding to form a hybrid bonding interface. FIG. 10 is a flowchart showing the general processing steps for forming a photonic component of an embodiment of the present invention. Referring to step 1010 and FIGS. 1A to 9F, a photonic integrated circuit die 700 including a waveguide 740 and a photonic device 750 can be provided. Referring to step 1020 and FIGS. 1A to 9F, an electronic integrated circuit die 600 including a semiconductor device 620 can be bonded to the photonic integrated circuit die 700. Referring to step 1030 and FIGS. 1A to 9F, an optical connector die 400 including an optical element can be attached to the photonic integrated circuit die 700. Referring to step 1040 and FIGS. 1A to 9F, a dielectric substrate 630 surrounding the optical connector die 400 can be directly formed on the sidewall of the electronic integrated circuit die 600. Referring to all the figures and according to various embodiments of the present invention, a photonic component including a composite die 780 is provided. The composite die 780 includes: a photonic integrated circuit (PIC) die including a waveguide 740 and a photonic device 750; an electronic integrated circuit (EIC) die 600 including a semiconductor device 620; and an optical connector die 400 contacting the top surface of the photonic integrated circuit die 700 and laterally spaced apart from the electronic integrated circuit die 600. In one embodiment, the optical connector die 400 includes an optical deflector 460 configured to change the beam direction between a vertically extending beam path 99 in the composite die 780 and a horizontally extending beam path 97 in a first waveguide in the optical connector die 400. In one embodiment, the vertically extending beam path 99 is entirely outside the photonic integrated circuit die 700. In one embodiment, the optical connector die 400 includes at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die) in the vertically extending beam path 99 in the composite die 780. In one embodiment, the photonic integrated circuit die 700 includes an optical deflector 460 configured to change the beam direction between the vertically extending beam path 99 and the horizontally extending beam path 97 in the horizontally extending waveguide in the photonic integrated circuit die 700. In one embodiment, the photonic component includes a dielectric substrate 630 that laterally surrounds the optical connector die 400 and contacts the sidewalls of the electronic integrated circuit die 600. In one embodiment, the composite die 780 includes a carrier semiconductor substrate 510 located above the electronic integrated circuit die 600 and the optical connector die 400. In one embodiment, the vertically extending beam path 99 extends through the carrier semiconductor substrate 510. In one embodiment, the optical connector die 400 contacts the bottom surface of the carrier semiconductor substrate 510. In accordance with one aspect of an embodiment of the present invention, a photonic component includes providing a composite die 780. The composite die 780 includes: a photonic integrated circuit (PIC) die 700 including waveguides 740 and photonic devices 750; an electronic integrated circuit (EIC) die 600 including semiconductor devices 620; a carrier semiconductor substrate 510 located above the photonic integrated circuit die 700 and the electronic integrated circuit die 600, wherein the composite die 780 is configured to provide a vertically extending beam path 99 extending through the carrier semiconductor substrate 510; and an optical connector die 400 including optical elements in or at one end of the vertically extending beam path 99. In one embodiment, the optical element includes an optical deflector 460 configured to change the beam direction between the vertically extending beam path 99 in the composite die 780 and the horizontally extending beam path 97 in the first waveguide in the optical connector die 400. In one embodiment, the optical element includes at least one optical lens (optical lens 412 in the first die, optical lens 414 in the second die) configured to focus the beam in the vertically extending beam path 99. In one embodiment, the optical connector die 400 includes a first metal bonding pad embedded in a dielectric material layer 430 of the optical connector die 400, and the photonic integrated circuit die 700 includes a second metal bonding pad bonded to the first metal bonding pad through a metal-to-metal bond. In one embodiment, the top surface of the electronic integrated circuit die 600 contacts a first section of the bottom surface of the carrier semiconductor substrate 510, and the top surface of the optical connector die 400 contacts a second section of the bottom surface of the carrier semiconductor substrate 510. In one embodiment, the bottom surface of the electronic integrated circuit die 600 contacts a first section of the top surface of the photonic integrated circuit die 700, the bottom surface of the optical connector die 400 contacts a second section of the top surface of the photonic integrated circuit die 700, and the dielectric matrix 630 contacting the sidewall of the electronic integrated circuit die 600 laterally surrounds the electronic integrated circuit die 600. According to one aspect of an embodiment of the present invention, a method for forming a photonic component is provided. The method includes providing a photonic integrated circuit die including waveguides and photonic devices; bonding an electronic integrated circuit die including semiconductor devices to the photonic integrated circuit die; attaching an optical connector die including optical elements to the photonic integrated circuit die; and forming a dielectric matrix surrounding the optical connector die on the sidewall of the electronic integrated circuit die. In one embodiment, the above method further includes attaching a carrier semiconductor substrate to the assembly including the electronic integrated circuit die, the optical connector die, and the dielectric matrix. In one embodiment, a first optical lens is embedded on a first side of the carrier semiconductor substrate facing the assembly, and a second optical lens is embedded on a second side of the carrier semiconductor substrate relative to the first side. In one embodiment, the optical element includes an optical deflector configured to change the beam direction between a vertically extending portion of the beam path in the composite die and a horizontally extending beam path in a first waveguide in the optical connector die. In one embodiment, the optical element includes at least one optical lens configured to focus the beam in the vertically extending portion of the beam path, and the photonic integrated circuit die includes an optical deflector located at one end of the vertically extending portion of the beam path and configured to change the beam direction between the vertically extending portion of the beam path and a horizontally extending beam path in a waveguide in the photonic integrated circuit die. Various embodiments of the present invention can be used to provide a photonic component including the optical connector die 400. The optical connector die 400 includes a section of the optical path. The optical connector die 400 includes at least one optical element, and the optical element can include an optical deflector and / or at least one optical lens. Various embodiments of the present invention can be used to provide a variety of compact and general photonic engine structures. The foregoing text outlines the features of many embodiments, enabling those with ordinary knowledge in the technical field to better understand the embodiments of the present invention from various aspects. Unless explicitly disclosed otherwise herein, each embodiment described using the term "comprising" also inherently discloses additional embodiments, where the term "comprising" is replaced with "consisting essentially of" or "consisting of". Whenever two or more elements are listed as alternatives in the same paragraph or different paragraphs, a Markush group encompassing the two or more elements is also implicitly disclosed. Whenever the auxiliary verb "can" is used in the embodiments of the present invention to describe the formation of an element or the performance of a processing step, embodiments in which such an element is not formed or such a processing step is not performed are also explicitly contemplated, provided that the resulting device or equipment can provide equivalent results. Therefore, whenever the formation of such an element or such a processing step is omitted, the auxiliary verb "can" applied to the performance of the formation of the element or the processing step should also be interpreted as "can" or "can or may not". The processing steps can provide the same results or equivalent results, and equivalent results include slightly better results and slightly worse results. Those with ordinary knowledge in the technical field should understand and can easily design or modify other processes and structures based on the embodiments of the present invention to achieve the same purpose and / or achieve the same advantages as the embodiments introduced herein. Those with ordinary knowledge in the technical field should also understand that these equivalent structures do not depart from the inventive spirit and scope of the embodiments of the present invention. Various changes, substitutions, or modifications can be made to the embodiments of the present invention without departing from the inventive spirit and scope of the embodiments of the present invention. 96: Inter-granular light beam path 97: Horizontally extending light beam path 99: Vertically extending light beam path 140: Optical fiber 400: Optical connector die 410: Die substrate 412: Optical lens in the first die 414: Optical lens in the second die 430, 730: Dielectric material layer 440, 740: Waveguide 460, 760: Optical deflector 461, 761: Die mirror 461A: Metal-coated mirror 461B: Superlattice 490: Connector to die metal bonding pad 500: Substrate 510: Carrier semiconductor substrate 580: Optically transparent dielectric layer 600: Electronic integrated circuit die 612: First substrate lens 614: Second substrate lens 620: Semiconductor device 630: Dielectric matrix 690: Electronic integrated circuit metal bonding pad 700: Photonic integrated circuit die 710: Photonic integrated circuit metal bonding pad 750: Photonic device 762: Grating coupler 770: Metal interconnect structure 780: Composite die 781: Application-specific integrated circuit die 782: Memory die 788: Die bump structure 790: First solder material portion 792: First underfill material portion 800: Interposer 820: Die-side metal interconnect wiring 825: Interposer via structure 829: Micro-bump structure 840: Embedded local interconnect die 847: Interposer molding compound frame 850: Interposer via structure 857: Interposer matrix 860: Package-side metal interconnect wiring 886: Molding compound die frame 890: Second solder material portion 892: Second underfill material portion 900: Package substrate 920: Die-side interconnect traces 930: Substrate via structure 940: Insulating substrate 950: Substrate-side interconnect traces 990: Solder joint 1010, 1020, 1030, 1040: Steps FBI: Fusion interface Embodiments of the present invention can be better understood with reference to the following detailed description and the accompanying drawings. It should be noted that, in accordance with the standard practice in this industry, the various components (features) in the drawings are not necessarily drawn to scale. In fact, the dimensions of the various components may be arbitrarily enlarged or reduced for clear illustration. FIG. 1A is a vertical cross-sectional schematic view of the structure of a first embodiment of an embodiment of the present invention according to one aspect of the present disclosure. FIG. 1B is an enlarged view of a part of the structure of the first embodiment of FIG. 1A. FIGS. 1C, 1D, 1E, and 1F are vertical cross-sectional schematic views of various alternative configurations of the structure of the first embodiment. FIG. 2A is a vertical cross-sectional schematic view of a first embodiment of a reflector mirror according to one aspect of the present disclosure. FIG. 2B is a vertical cross-sectional schematic view of a second embodiment of a reflector mirror according to one aspect of the present disclosure. FIG. 3A is a vertical cross-sectional schematic view of the structure of a second embodiment of an embodiment of the present invention according to one aspect of the present disclosure. FIG. 3B is an enlarged view of a part of the structure of the second embodiment of FIG. 3A. FIGS. 3C, 3D, 3E, and 3F are vertical cross-sectional schematic views of various alternative configurations of the structure of the second embodiment. FIG. 4A is a vertical cross-sectional schematic view of the structure of a third embodiment of an embodiment of the present invention according to one aspect of the present disclosure. FIG. 4B is an enlarged view of a part of the structure of the third embodiment of FIG. 4A. FIGS. 4C, 4D, 4E, and 4F are vertical cross-sectional schematic views of various alternative configurations of the structure of the third embodiment. FIG. 5A is a vertical cross-sectional schematic view of the structure of a fourth embodiment of an embodiment of the present invention according to one aspect of the present disclosure. FIG. 5B is an enlarged view of a part of the structure of the fourth embodiment of FIG. 5A. FIGS. 5C, 5D, 5E, and 5F are vertical cross-sectional schematic views of various alternative configurations of the structure of the fourth embodiment. FIG. 6A is a vertical cross-sectional schematic view of the structure of a fifth embodiment of an embodiment of the present invention according to one aspect of the present disclosure. FIG. 6B is an enlarged view of a part of the structure of the fifth embodiment of FIG. 6A. FIGS. 6C, 6D, 6E, and 6F are vertical cross-sectional schematic views of various alternative configurations of the structure of the fifth embodiment. FIG. 7A is a vertical cross-sectional schematic view of the structure of a sixth embodiment of an embodiment of the present invention according to one aspect of the present disclosure. FIG. 7B is an enlarged view of a part of the structure of the sixth embodiment of FIG. 7A. FIGS. 7C, 7D, 7E, and 7F are vertical cross-sectional schematic views of various alternative configurations of the structure of the sixth embodiment. FIG. 8A is a vertical cross-sectional schematic view of the structure of a seventh embodiment of an embodiment of the present invention according to one aspect of the present disclosure. FIG. 8B is an enlarged view of a part of the structure of the seventh embodiment of FIG. 8A. FIGS. 8C, 8D, 8E, and 8F are vertical cross-sectional schematic views of various alternative configurations of the structure of the seventh embodiment. FIG. 9A is a vertical cross-sectional schematic view of the structure of an eighth embodiment of an embodiment of the present invention according to one aspect of the present disclosure. FIG. 9B is an enlarged view of a part of the structure of the eighth embodiment of FIG. 9A. FIGS. 9C, 9D, 9E, and 9F are vertical cross-sectional schematic views of various alternative configurations of the structure of the eighth embodiment.FIG. 10 is a flowchart showing the general processing steps for forming the photon component of an embodiment of the present invention. 99: Vertically extending beam path 140: Optical fiber 400: Optical connector die 410: Die substrate 440, 740: Waveguide 460: Optical deflector 461: Die mirror 500: Substrate 510: Carrier semiconductor substrate 580: Optically transparent dielectric layer 600: Electronic integrated circuit die 612: First substrate lens 614: Second substrate lens 620: Semiconductor device 630: Dielectric matrix 690: Electronic integrated circuit metal bonding pad 700: Photonic integrated circuit die 710: Photonic integrated circuit metal bonding pad 750: Photonic device 770: Metal interconnect structure 780: Composite die 788: Die bump structure 790: First solder material portion 792: First underfill material portion 800: Interposer 820: Die side metal interconnect wiring 850: Interposer via structure 857: Interposer matrix 886: Molding compound die frame 890: Second solder material portion 892: Second underfill material portion 900: Package substrate 990: Solder joint

Claims

1. A photonic component, comprising: a composite die, including: a photonic integrated circuit die, including a waveguide and a photonic device; an electronic integrated circuit die, including a semiconductor device; and an embedded optical connector die, contacting the top surface of the photonic integrated circuit die and laterally spaced from the electronic integrated circuit die, wherein the embedded optical connector die includes a first metal bonding pad embedded in a dielectric material layer of the embedded optical connector die, and the photonic integrated circuit die includes a second metal bonding pad bonded to the first metal bonding pad via metal-to-metal bonding.

2. The photonic component of claim 1, wherein the embedded optical connector die includes an optical deflector configured to change the beam direction between a vertical extension of a beam path in the composite die and a horizontally extended beam path in a first waveguide in the embedded optical connector die.

3. The photonic component of claim 2, wherein the vertical extension of the beam path is entirely outside the photonic integrated circuit die.

4. A photonic component as claimed in any one of claims 1 to 3, wherein the embedded optical connector die includes at least one optical lens in a vertically extended portion of a beam path located in the composite die.

5. The photonic component of claim 4, wherein the photonic integrated circuit die includes an optical deflector configured to change a beam direction between the vertical extension of the beam path and a horizontally extended beam path in a horizontally extended waveguide in the photonic integrated circuit die.

6. The photonic component of any one of claims 1 to 3 further includes: a dielectric matrix that laterally surrounds the embedded optical connector die and contacts the sidewall of the integrated circuit die.

7. The photonic component of claim 2, wherein the composite die includes a carrier semiconductor substrate located above the electronic integrated circuit die and the embedded optical connector die.

8. The photonic component of claim 7, wherein a vertical extension of a beam path extends through the carrier semiconductor substrate.

9. The photonic component of claim 7, wherein the embedded optical connector die contacts the bottom surface of the carrier semiconductor substrate.

10. A photonic component, comprising: a composite die including: a photonic integrated circuit die including a waveguide and a photonic device; an electronic integrated circuit die including a semiconductor device; a carrier semiconductor substrate located above the photonic integrated circuit die and the electronic integrated circuit die, wherein the composite die is configured to provide a beam path extending through the carrier semiconductor substrate; and an embedded optical connector die including an optical element located in or at one end of the beam path, wherein the embedded optical connector die includes a first metal bonding pad embedded in a dielectric material layer of the embedded optical connector die, and the photonic integrated circuit die includes a second metal bonding pad bonded to the first metal bonding pad via metal-to-metal bonding.

11. The photonic assembly of claim 10, wherein the optical element includes at least one optical lens configured to focus a beam in a vertical extension of the beam path.

12. A method of forming a photonic component, comprising: providing a photonic integrated circuit die including a waveguide and a photonic device; bonding an electronic integrated circuit die including a semiconductor device to the photonic integrated circuit die; attaching an optical connector die including an optical element to the photonic integrated circuit die, wherein the optical connector die includes a first metal bonding pad embedded in a dielectric material layer of the optical connector die, and the photonic integrated circuit die includes a second metal bonding pad bonded to the first metal bonding pad via metal-to-metal bonding; and forming a dielectric matrix surrounding the optical connector die on the sidewall of the electronic integrated circuit die.

13. The method of forming a photonic component as claimed in claim 12 further includes: attaching a carrier semiconductor substrate to a component comprising the electronic integrated circuit die, the optical connector die, and the dielectric matrix.

14. The method of forming a photonic component as claimed in claim 13, wherein a first optical lens is embedded on a first side of the carrier semiconductor substrate facing the component, and a second optical lens is embedded on a second side of the carrier semiconductor substrate opposite to the first side.

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