Measuring apparatus, photoetching apparatus, article manufacturing method and measuring method

Abstract

A measuring device for measuring the position of a marker includes: a camera unit that captures an image of the marker; a processing unit that detects the position of the marker based on an image of the marker provided by the camera unit; the image of the marker includes a periodic arrangement of a plurality of lines parallel to an inclined direction that is inclined relative to a first direction; the processing unit determines the position of the marker in the first direction based on signals of a plurality of regions of the image; the plurality of regions are determined based on the period of the plurality of lines in a second direction perpendicular to the first direction.

Description

Technical Field

[0001] The present invention relates to a measuring device, a photoetching device, an article manufacturing method and a measuring method. Prior Art

[0002] Photolithography devices such as exposure devices and imprinting devices can be used to manufacture items such as semiconductor devices. In photolithography devices, marks such as alignment marks can be used to measure the position of a substrate, the position of an original plate, the relative alignment of the substrate and the original plate, and the shape of a shot area on the substrate. One type of alignment mark is an oblique mark. An oblique mark is a mark with a certain line width and space width that is tilted at a certain angle relative to the coordinate axis of the measurement coordinate system. Among methods for detecting the position of an oblique mark, there is a method that uses the intensity of interference light when light diffracted by the mark passes through a diffraction grating (Patent Document 1). [Prior Art Literature] [Patent Document]

[0003] [Patent Document 1] Japanese Patent No. 4913169 Summary of the Invention

[0004] [Problems to be solved by the invention]

[0005] When measuring the position of a mark formed by lines and spaces extending parallel to the coordinate axes, the mark's position can be determined by integrating the light intensity of the mark's image perpendicular to the detection direction to generate a one-dimensional waveform. This waveform is then used to calculate the center of gravity of the waveform. However, when determining the position of an oblique mark using this method, even if a one-dimensional waveform is generated from the mark's image, the contrast between the mark and the blank area cannot be accurately expressed.

[0006] An object of the present invention is to provide a technique that is advantageous for detecting the position of an oblique mark. [Methods of solving the problem]

[0007] One aspect of the present invention is a measuring device for measuring the position of a mark, the measuring device comprising: an imaging unit for imaging the mark; a processing unit for detecting the position of the mark based on the image of the mark provided by the imaging unit; the image of the mark comprising a periodic arrangement of a plurality of lines parallel to an inclined direction inclined relative to a first direction; the processing unit determining the position of the mark in the first direction based on signals of a plurality of regions of the image; the plurality of regions being determined based on the period of the plurality of lines in a second direction perpendicular to the first direction. [Effects of the Invention]

[0008] According to the present invention, a technique is provided that is advantageous for detecting the position of an oblique mark. Simple diagram description

[0009] [FIG. 1] A diagram schematically showing the structure of an exposure apparatus as a first embodiment of a photolithography apparatus. [Figure 2] A diagram schematically shows an image of an alignment mark captured by an imaging element of an alignment detection system. FIG. 3 is a diagram schematically showing a two-dimensional model MD1 of an XY mark and an image IMG1 of an alignment mark MA1. [Figure 4] A diagram illustrating a general method of detecting the position of an alignment mark. [Figure 5] A diagram illustrating an example of the problem regarding position detection of oblique marks. [Figure 6] A diagram illustrating a position detection method in which a detection module determines the position of an oblique mark based on an image of the oblique mark provided from an alignment detection system. [Fig. 7] A diagram illustrating process S002. [Fig. 8] A diagram illustrating a method for determining a multiple measurement area (multiple area). [Fig. 9] A diagram illustrating a modified example. [Figure 10] A diagram illustrating process S003. FIG. 11 is a diagram illustrating a complex measurement area (complex area) determined to detect the Y-direction position of an image of an oblique mark, and a one-dimensional integrated waveform. [Figure 12] An example of an oblique mark composed of dotted lines. [Figure 13] A diagram illustrating a modified example. [Figure 14] A diagram illustrating the position detection method of the second embodiment. [Figure 15] A diagram illustrating the position detection method of the second embodiment. [Figure 16] A diagram illustrating a method for determining a multiple measurement area (multiple area). [Figure 17] A diagram illustrating the synthesis of two integrated waveforms. Implementation Method

[0010] The following embodiments are described in detail with reference to the drawings. The following embodiments do not limit the scope of the claimed invention. Although multiple features are described in the embodiments, not all of these features are required for the invention, and any combination of multiple features is acceptable. In the drawings, identical or similar components are assigned the same reference numerals, and repeated descriptions are omitted.

[0011] In this disclosure, directions are described for convenience using the XYZ coordinate system. Typically, the negative direction of the Z axis is vertically downward, but this is not limited to this. The direction parallel to the X axis is referred to as the X direction or the X-axis direction, the direction parallel to the Y axis is referred to as the Y direction or the Y-axis direction, and the direction parallel to the Z axis is referred to as the Z direction or the Z-axis direction. In this disclosure, the first direction and the second direction may be the X direction and the Y direction, respectively, or the Y direction and the X direction, respectively. The first direction and the second direction are different directions that are perpendicular to each other.

[0012] The measurement device of one aspect of the present disclosure is equipped with a photolithography device for transferring the pattern of the original plate to the substrate, and the other aspects of the present disclosure are related to such a photolithography device. The photolithography device can be, for example, an exposure device, an imprinting device, or an electron beam imaging device. In the present disclosure, the mark can be a structure including a pattern capable of detecting a position in the measurement device. In the present disclosure, the oblique mark is a mark having a structure with a periodic arrangement of multiple lines parallel to an inclined direction relative to a predetermined direction (for example, the X direction or the Y direction). The line can be a structure that is continuous in one direction like a solid line, or a structure that is discontinuous but can be identified as a structure that is continuous in one direction by information processing, such as a dotted line or a chain line.

[0013] <First embodiment> FIG1 schematically illustrates the structure of an exposure apparatus 100, which serves as a first embodiment of a photolithography apparatus. The exposure apparatus 100 incorporates an alignment detection system OA and a detection module PDM, which serve as a first embodiment of the measurement apparatus disclosed herein. After aligning a master plate (a photomask R) with a substrate (a wafer W), the exposure apparatus 100 irradiates the photomask R with exposure light using an irradiation system IL. The pattern on the photomask R is transferred to a photosensitive material on the wafer W via a projection optical system PO. Wafer W is mounted on a stage STG, movable in the X, Y, and Z directions, via a chuck CH that holds the wafer W. The position of the stage STG is measured by an interferometer IF. Based on the position measurement results of the stage STG, the control unit HP controls a drive mechanism (not shown) to drive or position the stage STG. Driving or positioning the stage STG can also be understood as driving or positioning the wafer W.

[0014] A plurality of alignment marks (also simply referred to as "marks") MA are arranged on the wafer W for purposes such as wafer W alignment. The alignment detection system OA optically detects the alignment marks MA. The alignment detection system OA functions as an imaging unit that captures images of the alignment marks MA. When the alignment detection system OA detects the alignment marks MA, the stage STG is driven so that the alignment marks MA enter the detection range of the alignment detection system OA.

[0015] The alignment detection system OA can include an optical system including an illumination light source LI and an objective lens OL. Illumination light emitted from the illumination optical system LI is reflected by a half-mirror M through the optical system, illuminating the alignment mark MA. Reflected and scattered light from the alignment mark MA forms an optical image of the alignment mark MA on the imaging surface of an imaging element S, such as a CCD image sensor or a CMOS image sensor, through the optical system. This image is captured by the imaging element S as an image IMG. Figure 2 schematically illustrates an image IMG of the alignment mark MA1 captured by the imaging element S of the alignment detection system OA. The imaging element S transmits the image IMG to the control unit HP. The control unit HP includes a detection module PDM, which detects the position of the alignment mark MA on the wafer W by processing the image IMG. The detection module PDM functions as a processing unit that detects the position of the alignment mark MA based on the image of the alignment mark MA provided by the alignment detection system OA, which functions as an imaging unit. Furthermore, the position of the alignment mark (mark) MA and the position of the image of the alignment mark (mark) MA detected by the alignment detection system OA are mutually convertible and are therefore considered equivalent information. In other words, the position of the alignment mark (mark) MA and the position of the image of the alignment mark (mark) MA detected by the alignment detection system OA are equivalent.

[0016] The detection module PDM may be incorporated into the alignment detection system OA. Furthermore, the alignment detection system OA and the detection module PDM may be understood as a measurement device. The control unit HP controls the stage STG and simultaneously controls the exposure of the wafer W based on the previously input arrangement design information of the plurality of shot areas on the wafer W, the position detection results of the alignment marks MA, and the position information of the stage STG obtained from the interferometer IF. The control unit HP may be composed of, for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), a general-purpose or dedicated computer with an embedded program, or a combination of all or part of these. The detection module PDM may be a software module incorporated into the control unit HP. Alternatively, the detection module PDM may be composed of a PLD (Programmable Logic Device) such as an FPGA, an ASIC, a general-purpose or dedicated computer with an embedded program, or a combination of all or part of these.

[0017] Here, a method for detecting the position of a general alignment mark, namely the XY mark MA1, is described with reference to Figures 3 and 4. After the detection module PDM performs a rough detection process to roughly detect the position of the XY mark MA1, it performs a fine detection process to precisely detect the position of the XY mark MA1. During the rough detection process, the detection module PDM performs template matching using the two-dimensional model MD1 (template) of the XY mark on the image IMG1. The detection module PDM can determine the center of the two-dimensional model MD1 when the two-dimensional model MD1 and the image IMG1 of the XY mark MA1 are most closely aligned as the rough detection center (X0, Y0). During the fine detection process, the detection module PDM first sets the measurement areas WIN_X and WIN_Y in the image IMG1 of the XY mark MA1 based on the rough detection center (X0, Y0) obtained during the rough detection process, as shown in Figure 4. During fine inspection, the detection module PDM integrates the light intensity perpendicular to the direction of detection within the measurement areas WIN_X and WIN_Y, generating one-dimensional integrated waveforms WA_X and WA_Y. During fine inspection, the detection module PDM further calculates the center of gravity of the integrated waveforms WA_X and WA_Y to determine the center position (X1, Y1) of the XY marker MA1 in image IMG1.

[0018] On the other hand, as shown in the example of Figure 5, when the alignment mark is the oblique mark MA2, the measurement areas WIN_X and WIN_Y are set as described above to generate the integrated waveforms, resulting in waveforms WA_X' and WA_Y'. However, because the contrast between the mark portion and the blank portion (the portion other than the mark portion) is not accurately represented in the waveforms WA_X' and WA_Y', the position of the oblique mark MA2 cannot be determined. As described below, the detection module PDM can determine the measurement area based on the line width L and space width S extracted from the image of the oblique mark MA2, and the angle α between the line and space forming the measurement coordinate. The line width L and space width S are the line width and space width in the measurement coordinate (detection direction). The oblique mark MA2 includes a periodic arrangement of multiple lines parallel to an inclination direction that is tilted relative to the detection direction (first direction). Therefore, the image of the oblique mark MA2 also includes a periodic arrangement of multiple lines parallel to an inclination direction that is tilted relative to the detection direction (first direction). The periodicity of the multiple lines is also observed in the detection direction (first direction) and in a second direction perpendicular to the detection direction (first direction). From another perspective, the periodicity of the multiple lines is also observed in the X and Y directions. Alternatively, the detection module PDM may obtain the line width L, space width S, and angle α of the oblique mark MA2 from the design (design) information of the oblique mark MA2. Alternatively, the design (design) information of the oblique mark MA2 may be stored in a memory unit (not shown) of the control unit HP or obtained from an external information processing device (not shown).

[0019] Figure 6 illustrates a method for detecting a position of an oblique mark using the detection module PDM based on an image of the oblique mark provided by the alignment detection system OA. First, in step S001, a rough detection process is performed to detect the position of the oblique mark. Specifically, the detection module PDM determines the rough detection center (X0, Y0) of the oblique mark image by performing template matching using a two-dimensional model (template) of the oblique mark on the image provided by the alignment detection system OA.

[0020] Next, in steps S002-S004, a fine detection process is performed to precisely detect the position of the oblique mark. Specifically, in step S002, the detection module PDM determines a complex measurement area corresponding to the oblique mark's line width L, space width S, and angle α based on the coarse detection center (X0, Y0) obtained in the coarse detection process. As described later, this complex measurement area is, for example, a complex area within the same phase range. Next, in step S003, the detection module PDM generates an integrated waveform for this complex measurement area according to the sequence described below. In step S004, the detection module PDM detects (determines) the oblique mark's position based on this integrated waveform.

[0021] Referring to Figure 7, the method for determining the multiple measurement areas in step S002, that is, the multiple areas within the same phase range, is explained. The width of each measurement area WIN_O to be determined is T, and the interval between adjacent measurement areas WIN_O is I. In the example of Figure 7, the positions of the oblique marks are detected in the "detection direction." Alternatively, the detection direction can be defined as the first direction, and the direction perpendicular to the detection direction (the first direction) as the second direction. The width T of the measurement area WIN_O is the size of the measurement area WIN_O in the second direction perpendicular to the detection direction (the first direction). Furthermore, the interval I between adjacent measurement areas WIN_O is the distance in the second direction between adjacent measurement areas WIN_O in the second direction. The detection module PDM can calculate the width T and the interval I according to Equations 1 and 2, respectively.

[0022]

[0023] The detection module PDM can set a complex measurement area WIN_XO based on the width T, interval I, and the coarse detection center (X0, Y0). Figure 8 illustrates the complex measurement area WIN_XO when the detection direction (first direction) is the X direction. If the center coordinates of the nth measurement area WIN_XO, viewed from the coarse detection center (0th), are (X0, Y0n), then Y0n, based on the coarse detection center, can be determined using Equation 3.

[0024] In the oblique mark image, T+I represents the period of the complex lines in the second direction perpendicular to the detection direction (the first direction). Therefore, determining, calculating, or specifying T+I can be understood as determining the period of the complex lines in the second direction in the oblique mark image. Furthermore, determining the complex measurement area WIN_XO according to Equation 3 can be understood as extracting signals from the complex measurement area (complex area) within the same phase range from the oblique mark image. Alternatively, the complex measurement area (complex area) can be understood as a period determiner based on the complex lines in the second direction.

[0025] Furthermore, if the imaging element S is tilted at an angle θ (assuming -90° < θ < 90°) relative to the measurement coordinates as shown in Figure 9(a), considering this angle θ, Equations 1 and 2 can be rewritten as Equations 4 and 5. Equations 4 and 5 represent the width T' and interval I' corrected by the angle θ. Figure 9(b) shows an enlarged view of a portion 900 of Figure 9(a).

[0026]

[0027]

[0028] The generation of the integrated waveform in step S003 will be described with reference to Figure 10. As shown in Figure 10, step S002 determines a plurality of measurement areas WIN_XO arranged in a second direction perpendicular to the detection direction (first direction) (here, the X direction) of the image of the oblique mark MA2. In step S003, the detection module PDM integrates (integrates) the light intensity within the plurality of measurement areas WIN_XO in the second direction perpendicular to the detection direction (first direction) to generate a one-dimensional integrated waveform WA_XO. This one-dimensional integrated waveform WA_XO accurately represents the line width L and space width S of the oblique mark MA2.

[0029] The detection module PDM can also perform the aforementioned measurement area determination process (S002) and integration process (S003) for the Y direction of the image of the oblique mark MA2. Figure 11 illustrates the complex measurement area WIN_YO (the second complex area) determined to detect the Y-direction position of the image of the oblique mark MA2, and the one-dimensional integrated waveform WA_YO.

[0030] In step S004, the detection module PDM determines the center position (X2, Y2) of the image of the oblique mark MA2 by performing centroid calculation processing on the one-dimensional integrated waveforms WA_XO and WA_YO obtained from the oblique mark. That is, in this embodiment, the detection module PDM determines the period of the complex lines in the second direction perpendicular to the first direction based on the image of the oblique mark. Furthermore, the detection module PDM determines the position of the oblique mark in the first direction based on signals from the complex second regions of the same phase range extracted from the complex periods in the second direction of the oblique mark image.

[0031] In the above embodiment, a one-dimensional integral waveform is generated from a two-dimensional image captured by the imaging element S. However, a one-dimensional integral waveform can also be obtained by scanning the mark with a light sensor. The scanning range in this case corresponds to the above-mentioned detection area.

[0032] The oblique markings illustrated in the above embodiments are composed of lines and spaces. While the line portion is continuous in one direction, like a solid line, they can also be discontinuous, like a dashed line or a chain line. In this case, information processing in the detection module PDM allows them to be identified as continuous in one direction. Figure 12 illustrates an oblique marking composed of dashed lines.

[0033] The integration width T or T' and the integration interval I or I' may be adjusted by subtracting or adding a certain amount so as to maximize the detection accuracy.

[0034] Using T' and I' calculated using Equations 4 and 5 as the initial values ​​T0 and I0 for the integration width and integration interval, and the accuracy of the position detected using T0 and I0 as R(T0, I0), we determine fixed correction values ​​η and ξ (η and ξ are real numbers) for the integration width and integration interval, respectively. Using these correction values ​​and the variables p and q (p and q are integers), the measurement accuracy can be expressed as R(T0 + pη, I0 + qξ). By determining the values ​​p' and q' that maximize R when -P ≤ p ≤ P and -Q ≤ q ≤ Q, respectively, we can determine T = T0 + p'η and I = I0 + q'ξ for measurement.

[0035] When generating integrated waveforms for multiple measurement areas, comparing the integrated waveforms for the measurement area near the coarse detection center with those for the measurement area farther from the center reveals differences in strength and phase due to noise, as shown in Figure 13. In this case, adjustments can be made by shrinking or expanding the other integrated waveforms in the measurement direction or by weighting the signal strength to align them with the integrated waveform near the coarse detection center.

[0036] <Second embodiment> The following describes the second embodiment of the present disclosure. Matters not mentioned in the second embodiment can be handled in accordance with the first embodiment. In the second embodiment, a plurality of first measurement regions are determined in accordance with the first embodiment, and a first integrated waveform is generated using the plurality of first measurement regions. Furthermore, in the second embodiment, a plurality of second measurement regions are determined so as to produce a second integrated waveform having a different phase (e.g., an opposite phase) than the first integrated waveform, and a second integrated waveform can be generated using the plurality of second measurement regions. Furthermore, in the second embodiment, after phase adjustment is performed so as to align the phases of the first and second integrated waveforms, a composite integrated waveform is generated by combining them, and the position of the mark can be detected based on this composite integrated waveform.

[0037] FIG14 illustrates a second embodiment of the process in which the detection module PDM determines the position of an oblique mark based on an image of the oblique mark provided by the alignment detection system OA. Steps S101 to S103 are the same as steps S001 to S003 in FIG6 . First, in step S101, a rough detection process is performed to roughly detect the position of the oblique mark. Specifically, the detection module PDM can determine the rough detection center (X0, Y0) of the oblique mark image by performing template matching on the oblique mark image provided by the alignment detection system OA using a two-dimensional model (template) of the oblique mark. Next, in step S102, the detection module PDM determines a plurality of first measurement areas based on the rough detection center (X0, Y0) obtained by the rough detection process, the line width L, the spatial width S, and the angle α extracted from the oblique mark image. Next, in step S103, the detection module PDM generates a first integrated waveform based on the plurality of first measurement areas.

[0038] In step S104, the detection module PDM determines a plurality of second measurement areas, different from the plurality of first measurement areas, based on the coarse detection center (X0, Y0) and in accordance with the line width L, space width S, and angle α of the oblique mark. Next, in step S105, the detection module PDM generates a second integrated waveform based on the plurality of second measurement areas.

[0039] In step S106, the detection module PDM adjusts the first and second integrated waveforms so that their phases are aligned and then adds them together to generate a composite integrated waveform. In step S107, the detection module PDM detects (determines) the position of the oblique mark based on the composite integrated waveform.

[0040] As shown in Figure 15, a first integrated waveform WA_XO is generated using a plurality of first measurement regions WIN_XO, and a second integrated waveform WA_XO' is generated using a plurality of second measurement regions WIN_XO', which have a different phase (e.g., opposite phase) than the first measurement regions WIN_XO. The first integrated waveform WA_XO and the second integrated waveform WA_XO' are signals derived from the same mark. Therefore, by aligning the phases of the first and second integrated waveforms WA_XO', and then combining them, a single composite integrated waveform can be obtained. For example, if the first and second integrated waveforms WA_XO' have opposite phases, the phase of one can be inverted and added to the other. By determining the mark position based on this composite integrated waveform, the accuracy of mark position detection can be improved.

[0041] The processing performed in step S104 will be described in more detail. As in the first embodiment, the second measurement area WIN_XO' is determined from the coarse detection center (X0, Y0). As shown in FIG16 , if the center coordinates of the second measurement area WIN_XO' located at the mth position from the coarse detection center (the 0th position) are set to (X0, Y0m), Y0m based on the coarse detection center can be determined as shown in Equation 6. In step S104, as shown in FIG17 , the plurality of second measurement areas can be determined so that the second waveform WA_XO' has a phase opposite to the first waveform WA_XO shifted in the measurement direction by (L+S) / 2.

[0042] In step S105, the detection module PDM generates a second waveform WA_XO' based on the plurality of second measurement areas WIN_XO'. In step S106, the second waveform WA_XO' is inverted and added to the first waveform WA_XO to obtain a composite waveform WA_XO(X). The same process is performed in the Y direction. In step S107, the detection module PDM calculates the center of gravity using the composite waveform obtained in step S106 to obtain the precise inspection center of the marker. <Item Manufacturing Method> The following describes a method for manufacturing an article using the aforementioned photolithography apparatus. The method may include a transfer step in which a pattern from an original plate is transferred to a substrate using a photolithography apparatus such as the aforementioned exposure apparatus, and a processing step in which the article is obtained by processing the substrate after the transfer step.

[0043] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Next, in order to disclose the scope of the invention, the following claims are attached.

[0044] PDM: Detection Module (Processing Unit) MA1: Alignment mark MA2: Alignment mark (oblique mark) WIN_XO: Measurement area WA_XO: Integral waveform X2, Y2: Center position of the oblique mark OA: Alignment detection system (camera unit)

Claims

1. A measuring device for measuring the position of a mark, comprising: an imaging unit for imaging the mark; a processing unit for detecting the position of the mark based on an image of the mark provided by the imaging unit; the image comprising a periodic arrangement of a plurality of lines parallel to an inclined direction inclined relative to a first direction; the processing unit determining the position of the mark in the first direction based on signals of a plurality of regions of the image; the plurality of regions being determined based on the period of the plurality of lines in a second direction perpendicular to the first direction.

2. The measuring device as described in claim 1, wherein, The aforementioned complex region is the region with the same phase range within the period of the aforementioned complex line in the aforementioned second direction.

3. The measuring device as described in claim 1, wherein, The aforementioned processing unit determines the position of the aforementioned mark in the aforementioned second direction based on the signal of the aforementioned image in the aforementioned plurality of second regions; the aforementioned plurality of second regions are determined based on the period of the aforementioned plurality of lines in the aforementioned first direction.

4. The measuring device as described in claim 2, wherein, The aforementioned processing unit determines the position of the aforementioned mark in the aforementioned second direction based on the signal of the aforementioned multiple second regions of the aforementioned image; the aforementioned multiple second regions are determined based on the period of the aforementioned multiple lines in the aforementioned first direction, and are regions with the same phase range within the period of the aforementioned multiple lines in the aforementioned first direction.

5. The measuring device as described in claim 1, wherein, The aforementioned processing unit determines the aforementioned multiple regions based on the line width, spatial width, and angle of the aforementioned multiple lines extracted from the aforementioned image.

6. The measuring device as described in claim 2, wherein, The aforementioned processing unit performs a coarse detection process to roughly detect the position of the aforementioned mark, and then performs a fine detection process to finely detect the position of the aforementioned mark. In the fine detection process, the position of the aforementioned mark in the aforementioned first direction is determined based on the signals of the complex regions with the same phase range.

7. The measuring device as described in claim 6, wherein, The aforementioned processing unit performs the aforementioned coarse inspection process by template matching.

8. The measuring device as described in claim 2, wherein, The aforementioned processing unit integrates the signal of the complex region with the same phase range in the aforementioned second direction to obtain a one-dimensional integral waveform, and determines the position of the aforementioned mark in the aforementioned first direction based on the aforementioned one-dimensional integral waveform.

9. The measuring device as described in claim 8, wherein, The aforementioned processing unit determines the aforementioned multiple regions based on the line width, spatial width, and angle of the aforementioned multiple lines extracted from the aforementioned image.

10. The measuring device as described in claim 1, wherein, The aforementioned processing unit determines the position of the aforementioned mark in the aforementioned first direction based on the first signal obtained from the multiple regions of the same first phase range extracted from the period of the aforementioned multiple lines in the aforementioned second direction in the aforementioned image, and the second signal obtained from the multiple regions of the same second phase range extracted from the period of the aforementioned multiple lines in the aforementioned second direction in the aforementioned image; the phase of the aforementioned first signal and the phase of the aforementioned second signal are different from each other.

11. The measuring device as described in claim 10, wherein, The aforementioned processing unit determines the position of the aforementioned mark in the aforementioned first direction based on the signal synthesized after phase adjustment in a manner that makes the phase of the aforementioned first signal and the phase of the aforementioned second signal consistent.

12. The measuring device as described in claim 10, wherein, The phase of the first signal and the phase of the second signal are opposite to each other.

13. The measuring device as described in claim 12, wherein, The aforementioned processing unit determines the position of the aforementioned mark in the aforementioned first direction based on the signal obtained by inverting the phase of one of the aforementioned first signal and the aforementioned second signal and adding it to the other of the aforementioned first signal and the aforementioned second signal.

14. The measuring device as described in claim 10, wherein, The first signal is a one-dimensional integral waveform obtained by integrating the signals of the complex regions of the first phase range in the second direction; the second signal is a one-dimensional integral waveform obtained by integrating the signals of the complex regions of the second phase range in the second direction.

15. The measuring device as described in claim 13, wherein, The first signal is a one-dimensional integral waveform obtained by integrating the signals of the complex regions of the first phase range in the second direction; the second signal is a one-dimensional integral waveform obtained by integrating the signals of the complex regions of the second phase range in the second direction.

16. A photoetching apparatus for transferring a pattern from an original onto a substrate, comprising: a measuring device as described in any one of claims 1 to 15 for measuring the position of a mark on the substrate.

17. A method for manufacturing an article, comprising: a transfer process for transferring a pattern of an original onto a substrate using a photolithography apparatus as described in claim 16; and a processing process for obtaining an article by processing the substrate after the aforementioned transfer process.

18. A measurement method for measuring the position of markers comprising a periodic arrangement of complex lines parallel to an inclination direction relative to a first direction, wherein, The position of the aforementioned mark in the first direction is determined by the signal of the complex region of the image based on the aforementioned mark; the aforementioned complex region is determined based on the period of the aforementioned complex line in the second direction perpendicular to the aforementioned first direction.

Images