Epitaxial structures in image sensors and method of forming the same

TWI940897BActive Publication Date: 2026-10-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW113122815
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2024-04-25
Filing Date
2024-06-20
Publication Date
2026-10-01
Estimated Expiration
2044-06-19

AI Technical Summary

Technical Problem

The challenge in forming back-side illuminated (BSI) image sensors is controlling the top surface profile of the epitaxial structure during high temperature processes, which can lead to non-uniformity and air gaps, damaging the structure due to lateral expansion of materials, and introducing processing chemicals.

Method used

The formation of epitaxial structures in trenches with stepped or curved sidewalls prevents lateral expansion during high temperature processes, maintaining surface uniformity and improving the interface with the silicon-based capping layer and trench sidewalls.

Benefits of technology

This approach enhances the integrity of the epitaxial structures in BSI image sensors by minimizing material expansion, reducing damage from processing chemicals, and ensuring consistent performance.

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Abstract

A semiconductor device with an image sensor and a method for manufacturing the same are disclosed. The semiconductor device includes: a substrate, a pixel region having a pixel structure, an isolation region adjacent to the pixel region having an isolation structure, and a contact pad region adjacent to the isolation region having a pad structure. The pixel structure includes an epitaxial structure, comprising an embedded portion having a stepped structure disposed in the substrate and a protruding portion extending above a top surface of the substrate. The pixel structure further includes a capping layer disposed on the protruding portion.
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Citation Information

Patent Citations

  • Semiconductor device and method of manufacturing same

    CN113380843A

  • Image sensor with improved light conversion efficiency and method of forming the same

    TW202137526A

  • Metal deep trench isolation biasing solution

    TW202207448A

  • Semiconductor structure and method of forming photodetector

    TW202213754A

  • Pixel array

    TW202221913A