Semiconductor encapsulating structure and method for manufacturing the same, and storage system

Abstract

This disclosure provides a semiconductor packaging structure and its fabrication method, as well as a memory system. The fabrication method of the semiconductor packaging structure includes: providing an initial semiconductor packaging structure, the initial semiconductor packaging structure including a die device, an initial substrate, and an initial encapsulation layer, the die device being located on one side of the initial substrate and electrically connected to the initial substrate, and the initial encapsulation layer being located on the initial substrate and covering the die device; removing the initial substrate to obtain the die packaging device; providing a packaging substrate, forming the die packaging device on one side of the packaging substrate, and electrically connecting the die packaging device to the packaging substrate; and forming a first encapsulation layer on the packaging substrate, such that the first encapsulation layer covers the die packaging device. The semiconductor packaging structure and its fabrication method disclosed herein enable the batch reusability of the semiconductor packaging structure.

Description

Semiconductor Packaging Structure, Its Preparation Method, and Storage System This disclosure relates to the field of semiconductor packaging technology, and particularly to a semiconductor packaging structure, its preparation method, and a storage system. After the product (semiconductor packaging structure) is officially mass-produced and shipped, due to reasons such as process drift of the product and defects in the packaging process, there is a certain probability that a certain batch or multiple batches of products will be returned in batches. If the quantity of the returned products is large, and the packaging type of the returned samples is unique and incompatible with the packaging types of other customers, which means that these samples cannot be used on the platforms of other customers either. In this case, these returned products may have to be scrapped, which will cause great losses to the company. In view of this, this disclosure provides a semiconductor packaging structure, its preparation method, and a storage system that can achieve the batch reuse of the returned semiconductor packaging structure. To solve the above problems, the technical solutions provided in this disclosure are as follows: In a first aspect, this disclosure provides a method for preparing a semiconductor packaging structure, including the steps of: providing an initial semiconductor packaging structure, where the initial semiconductor packaging structure includes a die device, an initial substrate, and an initial packaging layer, the die device is located on one side of the initial substrate and is electrically connected to the initial substrate, and the initial packaging layer is located on the initial substrate and covers the die device; removing the initial substrate to obtain a die packaging device; providing a substrate, forming the die packaging device on one side of the packaging substrate, and electrically connecting the die packaging device to the packaging substrate; and forming a first packaging layer on the packaging substrate and making the first packaging layer cover the die packaging device. In some embodiments of this disclosure, the die device is electrically connected to the initial substrate through a first connection wire, and the packaging substrate is located on the side of the initial packaging layer away from the initial substrate; The step of electrically connecting the die packaging device to the packaging substrate includes: providing a second connection wire and electrically connecting two ends of the second connection wire to the first connection wire exposed from one side of the die packaging device and the packaging substrate respectively; wherein, the first packaging layer also covers the second connection wire. In some embodiments of the present disclosure, the initial encapsulation layer includes a first side facing away from the initial substrate, and the die encapsulation device includes the first side and a second side facing away from the first side; the steps of forming the die encapsulation device on one side of the encapsulation substrate and electrically connecting the die encapsulation device to the encapsulation substrate include: inverting the die encapsulation device such that the second side of the die encapsulation device faces away from the encapsulation substrate; facing the first side of the die encapsulation device towards the encapsulation substrate and fixing it on the encapsulation substrate; and providing a second connection line and electrically connecting the two ends of the second connection line to the first connection line exposed from the second side and the encapsulation substrate respectively. In some embodiments of the present disclosure, the die device is electrically connected to the initial substrate through a first connection line, and the encapsulation substrate is located on a side of the initial encapsulation layer close to the initial substrate; the initial encapsulation layer includes a first side facing away from the initial substrate, and the die encapsulation device includes the first side and a second side facing away from the first side; the steps of forming the die encapsulation device on one side of the encapsulation substrate and electrically connecting the die encapsulation device to the encapsulation substrate include: facing the second side of the die encapsulation device towards the encapsulation substrate and fixing it on the encapsulation substrate; and providing a second connection line and electrically connecting the two ends of the second connection line to the first connection line exposed from the second side and the encapsulation substrate respectively. In some embodiments of the present disclosure, the initial semiconductor encapsulation structure further includes a wafer structure, the wafer structure is located between the initial substrate and the die device and is electrically connected to the initial substrate; after the step of removing the initial substrate, it further includes: removing the wafer structure. In some embodiments of the present disclosure, the wafer structure includes a wafer and a first initial bonding layer, the first initial bonding layer is formed on the initial substrate and covers the wafer, the wafer is electrically connected to the initial substrate, and the die device is bonded to the first initial bonding layer; wherein, the step of removing the wafer structure includes: removing the wafer and at least a part of the first initial bonding layer, and the first initial bonding layer remaining on the die device is the remaining bonding layer. In some embodiments of the present disclosure, while removing the wafer structure, it further includes: removing a part of the initial encapsulation layer, and the remaining initial encapsulation layer is the second encapsulation layer. In some embodiments of the present disclosure, while removing a part of the initial encapsulation layer, it further includes: removing a part of the first connection line; wherein, the surfaces of the second encapsulation layer, the remaining bonding layer and the first connection line facing away from the encapsulation substrate are flush. In some embodiments of the present disclosure, the die device includes dies stacked in sequence along the stacking direction of the die packaging device and the packaging substrate, and each die has connection pads; in the step of inverting the die packaging device such that the second side of the die packaging device faces away from the packaging substrate, the connection pads face the packaging substrate, one end of the first connection line is connected to the connection pad, and the other end of the first connection line is connected to the second connection line. In some embodiments of the present disclosure, both ends of the second connection line are respectively electrically connected to the first connection line and the packaging substrate exposed from the second side, so that the vertical distance from the highest point of the second connection line to the packaging substrate is greater than the thickness of the die packaging device in the stacking direction. In some embodiments of the present disclosure, the packaging substrate is connected to the die packaging device through a second adhesive layer. A second aspect of the present disclosure further provides a semiconductor packaging structure, including: a packaging substrate; a packaging layer formed on the packaging substrate; a die packaging device including a die device and embedded in the packaging layer; wherein, the packaging layer completely covers the die packaging device, there is a part of the packaging layer between the die packaging device and the packaging substrate, and the die device is electrically connected to the packaging substrate. In some embodiments of the present disclosure, the die packaging device further includes a first connection line, and one end of the first connection line is electrically connected to the die device; the semiconductor packaging structure further includes a second connection line, and both ends of the second connection line are respectively connected to the first connection line and the packaging substrate. In some embodiments of the present disclosure, the packaging layer includes a first packaging layer and a second packaging layer, the die device is embedded in the second packaging layer, and the die device and the second packaging layer are embedded in the first packaging layer. In some embodiments of the present disclosure, the die packaging device further includes a remaining adhesive layer, the remaining adhesive layer is located on the side of the die device away from the packaging substrate and covers the die device, and the packaging layer covers the remaining adhesive layer. In some embodiments of the present disclosure, the die device includes a die, and the die has connection pads; the surface of the die having the connection pads faces the packaging substrate, one end of the first connection line is connected to the connection pad, and the other end of the first connection line extends in a direction away from the surface of the die having the connection pads and is connected to the second connection line. In some embodiments of the present disclosure, the vertical distance from the highest point of the second connection line to the packaging substrate is greater than the thickness of the die packaging device in the stacking direction. In some embodiments of the present disclosure, the surfaces of the dies having the connection pads all face the packaging substrate. In some embodiments of the present disclosure, the die device further includes a first bonding layer, and two adjacent dies are connected through the first bonding layer; the encapsulation layer includes a first encapsulation layer and a second encapsulation layer, the die device is embedded in the second encapsulation layer, and the die device and the second encapsulation layer are embedded in the first encapsulation layer; the semiconductor packaging structure further includes a second bonding layer, and the packaging substrate is connected to the second encapsulation layer through the second bonding layer; there is a step difference between the surface of the first encapsulation layer facing the packaging substrate and the surface of the second encapsulation layer facing the packaging substrate, and the second bonding layer is embedded in the space formed by the step difference between the surface of the first encapsulation layer facing the packaging substrate and the surface of the second encapsulation layer facing the packaging substrate. In some embodiments of the present disclosure, the die device includes dies stacked in sequence along the stacking direction of the die packaging device and the packaging substrate, and each die has a connection pad; the surface of the die having the connection pad faces away from the packaging substrate, one end of the first connection line is connected to the connection pad, and the other end of the first connection line extends in a direction away from the surface of the die having the connection pad and is connected to the second connection line. In a third aspect, the present disclosure further provides a storage system, including: the semiconductor packaging structure as described above; and a controller configured to control the semiconductor packaging structure. The semiconductor packaging structure, its manufacturing method, and the storage system provided by the present disclosure obtain a die packaging device by removing the initial substrate of the initial semiconductor packaging structure (the returned semiconductor packaging structure); by designing a new packaging substrate that can meet the needs of other customers, forming the die packaging device on one side of the packaging substrate, electrically connecting the die packaging device to the packaging substrate, and cooperating with the packaging process, a new semiconductor packaging structure that can be used on the platforms of other customers can be formed. In this way, batch reuse of the returned semiconductor packaging structure can be achieved. Next, some embodiments of the present disclosure will be described clearly and completely with reference to the accompanying drawings in some embodiments of the present disclosure. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present disclosure. In the description of the present disclosure, it should be understood that the orientation or positional relationship indicated by terms such as "upper" and "lower" is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present disclosure. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present disclosure, "a plurality of" means two or more, unless otherwise specifically defined. The present disclosure may repeat reference numerals and / or reference letters in different embodiments. Such repetition is for the purpose of simplification and clarity and does not in itself indicate the relationship between the various embodiments and / or devices discussed. In view of the technical problem that the initially returned semiconductor package structure cannot be used on the platforms of other home customers, a die package device is obtained by removing the initial substrate of the initially returned semiconductor package structure; then a new package substrate that can meet the requirements of other customers is designed, and the die package device is formed on one side of the package substrate and the die package device is electrically connected to the package substrate and cooperated with the packaging process to form a new semiconductor package structure that can be used on the platforms of other home customers. In this way, the batch reuse of the returned semiconductor package structure can be achieved. Please refer to FIGS. 1 to 7B. Some embodiments of the present disclosure provide a method for manufacturing a semiconductor package structure 100, including: Step S1: Please refer to FIGS. 1-2B, provide an initial semiconductor package structure 10, the initial semiconductor package structure 10 includes an initial substrate 11, a die device 12 and an initial encapsulation layer 13. The die device 12 is located on one side of the initial substrate 11 and is electrically connected to the initial substrate 11. The initial encapsulation layer 13 is located on the initial substrate 11 and encapsulates the die device 12. Wherein, an initial electrical connector 16 is further formed on the initial substrate 11. The initial electrical connector 16 is electrically connected to the initial substrate 11 and is located on the side of the initial substrate 11 away from the die device 12. The initial electrical connector 16 is used for electrically connecting an external electronic component device. In the present disclosure, the initial substrate 11 may be an ordinary carrier substrate or a substrate with a circuit structure. When the initial substrate 11 is an ordinary carrier substrate, a lead frame for an external device needs to be provided on the carrier substrate to be electrically connected to the die device 12. In some embodiments of the present disclosure, the die device 12 includes a plurality of dies 121 and a plurality of first bonding layers 122 located between two adjacent dies 121. Among them, the first bonding layer 122 is used to bond two adjacent dies 121. The dies 121 and the first bonding layers 122 are stacked alternately, and the stacking direction of the dies 121 and the first bonding layers 122 is the same as the stacking direction of the initial substrate 11 and the die device 12. Two adjacent dies 121 are arranged staggeredly, and one end of one die 121 among two adjacent dies 121 protrudes from one end of the other die 121. In some embodiments of the present disclosure, the die device 12 may also include only one die 121. Correspondingly, the die device 12 does not include the first bonding layer 122. In some embodiments of the present disclosure, each die 121 has connection pads (not labeled in the figure), and the surface of the die 121 having the connection pads faces away from the initial substrate 11. In other embodiments, the surface of the die 121 having the connection pads may also face the initial substrate 11; or, the surface of some dies 121 having the connection pads faces away from the initial substrate 11, and the surface of another part of the dies 121 having the connection pads faces the initial substrate 11. Among them, the die device 12 further includes a first connection line 14, and the die device 12 is electrically connected to the initial substrate 11 through the first connection line 14. Specifically, one end of the first connection line 14 is electrically connected to the die 121, and the other end is electrically connected to the initial substrate 11. In some embodiments of the present disclosure, the number of the first connection lines 14 is multiple. Some dies 121 are connected in series through one first connection line 14, and then the dies connected in series are electrically connected to the initial substrate 11 through another first connection line 14. The dies 121 connected in series may be adjacent or non-adjacent. In this embodiment, the dies 121 connected in series are two adjacent dies. Of course, the number of the dies 121 connected in series is not limited to two. Defining the dies 121 connected in series as a die group, then in a die device 12, the number of die groups may be one or more. Among them, the initial encapsulation layer 13 encapsulates the dies 121 and the first connection lines 14. In this embodiment, the initial encapsulation layer 13 also encapsulates the first bonding layer 122. Among them, the initial encapsulation layer 13 includes a first side 132 away from the initial substrate 11. Please refer to FIG. 2A. In some embodiments of the present disclosure, the initial semiconductor package structure 10 further includes a wafer structure 15, which is located between the die device 12 and the initial substrate 11 and is electrically connected to the initial substrate 11. The initial encapsulation layer 13 also encapsulates the wafer structure 15. The wafer structure 15 includes a wafer 151, a first initial bonding layer 152, a third connection line 153, and a second initial bonding layer 154. The second initial bonding layer 154 is located on the initial substrate 11. The wafer 151 is located on the second initial bonding layer 154 and is electrically connected to the initial substrate 11 through the third connection line 153. The first initial bonding layer 152 bonds the die device 12 to the initial substrate 11 and encapsulates the wafer 151, the second initial bonding layer 154, and the third connection line 153. The first initial bonding layer 152 is also bonded to the initial encapsulation layer 13. In some embodiments of the present disclosure, the wafer 151 can be a control wafer or other wafers that do not have a control function and are directly connected to the initial substrate 11. Please refer to FIG. 2B. In some embodiments of the present disclosure, the initial semiconductor package structure 10 does not include the wafer structure 15, and the die device 12 is directly connected to the initial substrate 11 through a bonding layer 31. Step S2: Please refer to FIGS. 1, 3, and 4. Remove the initial substrate 11 to obtain a die package device 20. The die package device 20 includes a first side 132 and a second side 201 away from the first side 132. Please refer to FIGS. 2A, 3, and 4. In some embodiments of the present disclosure, since the initial semiconductor package structure 10 further includes the wafer structure 15, in step S2, after removing the initial substrate 11, the following steps are further included: removing the wafer structure 15. Among them, the step of removing the wafer structure 15 includes: removing the wafer 151, the second initial bonding layer 154, and at least part of the first initial bonding layer 152. In this embodiment, part of the first initial bonding layer 152 is retained on the die package device 20, and the first initial bonding layer 152 retained on the die package device 20 is the remaining bonding layer 17. In other embodiments, the first initial bonding layer 152 can also be completely removed. Among them, the function of the remaining bonding layer 17 is to protect the die 121 during the process of removing the wafer structure 15 or removing the wafer structure 15 and the initial substrate 11 to prevent the die 121 from being worn. While "removing the wafer structure 15", the following is also included: removing part of the initial encapsulation layer 13. Among them, the remaining initial encapsulation layer 13 is the second encapsulation layer 131. Among them, the second side 201 includes the surface of the second encapsulation layer 131 away from the first side 132 and the surface of the remaining bonding layer 17 away from the first side 132. In some embodiments of the present disclosure, the surface of the second encapsulation layer 131 facing away from the first side 132 of the remaining adhesive layer 17 is flush. That is, the second side 201 is a flat surface. Wherein, while "removing part of the initial encapsulation layer 13", the steps further include: removing part of the first connection line 14. Wherein, the surfaces of the second encapsulation layer 131, the remaining adhesive layer 17 and the first connection line 14 facing away from the first side 132 are flush. Please refer to FIG. 2B. In some other embodiments of the present disclosure, the structure of the initial semiconductor package structure 30 is similar to that of the initial semiconductor package structure 10, except that: the initial semiconductor package structure 30 does not include the chip structure 15. Then, after removing the initial substrate 11, it is not necessary to remove the chip structure 15 anymore, but part of the initial encapsulation layer 13 will also be removed. In some other embodiments of the present disclosure, the chip structure 15, the initial substrate 11 and part of the initial encapsulation layer 13 are removed by a mechanical grinding process or a mechanical grinding process combined with a wet or dry etching process. Step S3: Please refer to FIGS. 1, 4 to 6B. Provide a packaging substrate 19, form a die packaging device 20 on one side of the packaging substrate 19, and electrically connect the die packaging device 20 to the packaging substrate 19. Specifically, the die packaging device 20 is connected to one side of the packaging substrate 19 facing the die packaging device 20 through a second adhesive layer 21. In some embodiments of the present disclosure, the packaging substrate 19 can be an ordinary carrier substrate or a substrate with a circuit structure. When the packaging substrate 19 is an ordinary carrier substrate, a lead frame for external devices needs to be provided on the carrier substrate to be electrically connected to the die device 12. Please refer to FIGS. 1, 5 and 6A. In some embodiments of the present disclosure, the steps of "forming the die packaging device 20 on one side of the packaging substrate 19 and electrically connecting the die packaging device 20 to the packaging substrate 19" include: First, please refer to FIG. 5. Invert the die packaging device 20 so that the second side 201 of the die packaging device 20 faces away from the packaging substrate 19; Second, please refer to FIG. 6A. Face the first side 132 of the die packaging device 20 towards the packaging substrate 19 and fix it on the packaging substrate 19; Third, please refer to FIG. 6A. Provide a second connection line 18 and electrically connect the two ends of the second connection line 18 to the first connection line 14 exposed from the second side 201 of the die packaging device 20 and the packaging substrate 19 respectively. Referring to FIG. 6A, in some embodiments of the present disclosure, the first side 132 of the die packaging device 20 faces the packaging substrate 19. The vertical distance from the highest point of the second connection line 18 to the packaging substrate 19 is greater than the thickness of the die packaging device 20 in the stacking direction. That is, the length of the second connection line 18 is greater than the vertical distance from the side of the die packaging device 20 away from the packaging substrate 19 to the packaging substrate 19, which can avoid the second connection line 18 being too tightly stretched and easily detaching from the first connection line 14, thereby ensuring the connection reliability between the second connection line 18 and the first connection line 14. Specifically, one end of the first connection line 14 is connected to the connection pad of the die packaging device 20, and the other end of the first connection line 14 is connected to the second connection line 18. Correspondingly, in this embodiment, the connection pad of the die packaging device 20 faces the packaging substrate 19. Referring to FIGS. 1, 4, and 6B, in some other embodiments of the present disclosure, when performing the step of "forming the die packaging device 20 on one side of the packaging substrate 19", the die packaging device 20 may not be inverted, but directly disposed on the packaging substrate 19 through the second adhesive layer 21. At this time, the remaining adhesive layer 17 is bonded to the second adhesive layer 21. Correspondingly, the second side 201 of the die packaging device 20 faces the packaging substrate 19, and the length of the second connection line 18 in FIG. 6B is shorter than the length of the second connection line 18 in FIG. 6A. Step S4: Referring to FIGS. 1, 7A, and 7B, form a first encapsulation layer 22 on the packaging substrate 19, and make the first encapsulation layer 22 cover the die packaging device 20. Wherein, the first encapsulation layer 22 also covers the second connection line 18 and the second adhesive layer 21 to protect the second connection line 18 and increase the connection reliability of the semiconductor packaging structure 100. Of course, after step S4, the steps further include: forming a plurality of packaging electrical connectors 23 electrically connected to the packaging substrate 19 on the side of the packaging substrate 19 away from the die packaging device 20. The packaging electrical connectors 23 may or may not be protected by a protective layer. Of course, after step S4, there may also be other steps for manufacturing the semiconductor packaging structure, and these steps can be set according to actual situations and will not be elaborated here one by one. The preparation method of the semiconductor packaging structure provided by the present disclosure obtains a die packaging device by removing the initial substrate of the initial semiconductor packaging structure (the returned semiconductor packaging structure); by designing a new packaging substrate that can meet the requirements of other customers, forming the die packaging device on one side of the packaging substrate, electrically connecting the die packaging device to the packaging substrate, and cooperating with the packaging process, a new semiconductor packaging structure that can be used on the platforms of other customers can be formed. In this way, the batch reuse of the returned semiconductor packaging structure can be achieved. Referring to FIG. 7A, some embodiments of the present disclosure further provide a semiconductor packaging structure 100. The semiconductor packaging structure 100 includes a packaging substrate 19, a packaging layer 101, and a die packaging device 20. The packaging layer 101 is formed on the packaging substrate 19, and the die packaging device 20 includes a die device 12 and is embedded in the packaging layer 101. The packaging layer 101 completely covers the die packaging device 20. There is a part of the packaging layer 101 between the die packaging device 20 and the packaging substrate 19, and the die packaging device 20 is electrically connected to the packaging substrate 19. Specifically, the packaging layer 101 includes a first packaging layer 22 and a second packaging layer 131. The die device 12 is embedded in the second packaging layer 131, and the die device 12 and the second packaging layer 131 are embedded in the first packaging layer 22. Specifically, the die device 12 includes a plurality of dies 121 and a plurality of first bonding layers 122 located between two adjacent dies 121. The first bonding layer 122 is used to bond two adjacent dies 121. The dies 121 and the first bonding layers 122 are stacked alternately, and the stacking direction of the dies 121 and the first bonding layers 122 is the same as the stacking direction of the initial substrate 11 and the die device 12. Two adjacent dies 121 are arranged staggeredly, and one end of one of the two adjacent dies 121 protrudes from one end of the other die 121. The die device 12 further includes a remaining bonding layer 17. The remaining bonding layer 17 is located on the side of the die 121 farthest from the packaging substrate 19 away from the packaging substrate 19. The surface of the remaining bonding layer 17 away from the packaging substrate 19 is flush with the surface of the second packaging layer 131 away from the packaging substrate 19. The surface of the remaining bonding layer 17 away from the packaging substrate 19 and the surface of the second packaging layer 131 away from the packaging substrate 19 are in contact with the first packaging layer 22. The die device 12 further includes a first side 132 and a second side 201 remote from the first side 132. The first side 132 includes the surface of the second encapsulation layer 131 remote from the remaining adhesive layer 17, and the second side 201 includes the surface of the second encapsulation layer 131 remote from the first side 132 and the surface of the remaining adhesive layer 17 remote from the first side 132. The second side 201 of the die device 12 is in contact with the first encapsulation layer 22, and there is a step difference between the first side 132 of the die device 12 and the surface of the first encapsulation layer 22 in contact with the encapsulation substrate 19. Specifically, the die encapsulation device 20 is connected to one side of the encapsulation substrate 19 facing the die encapsulation device 20 through the second adhesive layer 21. The second adhesive layer 21 is located in the space formed by the step difference between the first side 132 of the die device 12 and the surface of the first encapsulation layer 22 in contact with the encapsulation substrate 19. In some embodiments of the present disclosure, the die device 12 may further include only one die 121. Correspondingly, the die device 12 does not include the first adhesive layer 122. Wherein, the die device 12 further includes a first connection line 14 and a second connection line 18, and the die device 12 is electrically connected to the encapsulation substrate 19 through the first connection line 14 and the second connection line 18. Specifically, one end of the first connection line 14 is electrically connected to the die 121, and the other end is electrically connected to one end of the second connection line 18, and the other end of the second connection line 18 is electrically connected to the encapsulation substrate 19. In some embodiments of the present disclosure, the number of the first connection lines 14 is multiple. Some dies 121 are connected in series through one first connection line 14, and then the dies connected in series are electrically connected to the second connection line 18 through another first connection line 14. The dies 121 connected in series may be adjacent or non - adjacent. In this embodiment, the dies 121 connected in series are two adjacent dies. Of course, the number of the dies 121 connected in series is not limited to two. Defining the dies 121 connected in series as a die group, then in a die device 12, the number of die groups can be one or more. In some embodiments of the present disclosure, the first side 132 of the die encapsulation device 20 faces the encapsulation substrate 19. The vertical distance from the highest point of the second connection line 18 to the encapsulation substrate 19 is greater than the thickness of the die encapsulation device 20 in the stacking direction. That is, the length of the second connection line 18 is greater than the vertical distance from the side of the die encapsulation device 20 remote from the encapsulation substrate 19 to the encapsulation substrate 19, which can avoid the second connection line 18 being too tight and easily detaching from the first connection line 14, thereby ensuring the connection reliability between the second connection line 18 and the first connection line 14. In some embodiments of the present disclosure, each die 121 has connection pads (not labeled in the figure). One end of the first connection line 14 is connected to the connection pad of the die packaging device 20, and the other end of the first connection line 14 is connected to the second connection line 18. Correspondingly, in this embodiment, the connection pad of the die packaging device 20 faces the packaging substrate 19. The first packaging layer 22 also covers the second connection line 18 and the second adhesive layer 21 to protect the second connection line 18 and increase the connection reliability of the semiconductor packaging structure 100. On the side of the packaging substrate 19 away from the die packaging device 20, there are also a plurality of packaging electrical connection components 23 electrically connected to the packaging substrate 19. The packaging electrical connection components 23 may or may not be protected by a protective layer. The packaging electrical connection components 23 are used to externally connect electronic components. Please refer to FIG. 7B. Some embodiments of the present disclosure also provide a semiconductor packaging structure 200. The structure of the semiconductor packaging structure 200 is similar to that of the semiconductor packaging structure 100, except that: the first side 132 of the die packaging device 20 is in contact with the first packaging layer 22, the second side 201 of the die packaging device 20 is bonded to the packaging substrate 19 through the second adhesive layer 21, the connection pad of the die packaging device 20 is located on the side of the die 121 away from the packaging substrate 19, the second adhesive layer 21 covers the second connection line 18, and the length of the second connection line 18 in FIG. 7B is shorter than the length of the second connection line 18 in FIG. 7A. Please refer to FIG. 8. The present disclosure also provides a storage system 1000. The storage system 1000 includes one or more semiconductor packaging structures 100 or 200 as described above and a controller 300. The controller 300 is located inside or outside the packaging layer 101 of the semiconductor packaging structure 100 or 200, and the controller 300 is configured to control the semiconductor packaging structure 100 or 200. When the controller 300 is located inside the packaging layer 101 of the semiconductor packaging structure 100 or 200, it can be considered that the semiconductor packaging structure 100 or 200 also has the function of the controller 300. When the controller 300 is located outside the packaging layer 101 of the semiconductor packaging structure 100 or 200, it can be considered that the semiconductor packaging structure 100 or 200 does not have the function of the controller 300, and the semiconductor packaging structure 100 or 200 and the controller 300 are independent. The storage system 1000 can be a mobile phone, a personal computer, a laptop, a tablet computer, a vehicle computer, a game console, a printer, a positioning device, a wearable electronic device, a smart sensor, a virtual reality (VR) device, an augmented reality (AR) device, or any other suitable electronic device having a memory therein. The controller can be configured to control the operations of the semiconductor package structure, such as read, erase, and programming operations. In some embodiments, the controller is designed to operate in a low-duty-cycle environment, such as a Secure Digital (SD) card, a Compact Flash (CF) card, a Universal Serial Bus (USB) flash memory drive, or other media used in electronic devices such as personal calculators, digital cameras, mobile phones, etc. In some embodiments, the controller is designed to operate in a high-duty-cycle environment, a Solid State Disk (SSD) or an Embedded Multi Media Card (eMMC), where the SSD or eMMC serves as a data storage for mobile devices such as smart phones, tablet computers, laptop computers, etc., as well as enterprise storage arrays. The semiconductor package structure, its manufacturing method, and the storage system provided by the present disclosure obtain a die packaging device by removing the initial substrate of the initial semiconductor package structure (the returned semiconductor package structure); by designing a new packaging substrate that can meet the needs of other customers, forming the die packaging device on one side of the packaging substrate, electrically connecting the die packaging device to the packaging substrate, and cooperating with the packaging process, a new semiconductor package structure that can be used on the platforms of other customers can be formed. In this way, the batch reuse of the returned semiconductor package structure can be achieved. In summary, although the present disclosure has been disclosed above with preferred embodiments, the above preferred embodiments are not intended to limit the present disclosure. Those of ordinary skill in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the protection scope of the present disclosure is subject to the scope defined by the claims. S1, S2, S3, S4: Steps 10, 30: Initial semiconductor package structures 100, 200: Semiconductor package structures 101: Encapsulation layer 11: Initial substrate 12: Die device 121: Die 122: First bonding layer 13: Initial encapsulation layer 131: Second encapsulation layer 132: First side 14: First connection line 15: Chip structure 151: Chip 152: First initial bonding layer 153: Third connection line 154: Second initial bonding layer 16: Initial electrical connector 17: Remaining bonding layer 18: Second connection line 19: Package substrate 20: Die packaging device 201: Second side 21: Second bonding layer 22: First encapsulation layer 23: Package electrical connector 300: Controller 31: Bonding layer 1000: Storage system To more clearly illustrate the technical solutions in some embodiments of the present disclosure, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present disclosure. For those skilled in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings. FIG. 1 is a flowchart of a method for manufacturing a semiconductor package structure provided by an embodiment of the present disclosure. FIGS. 2A and 2B are cross-sectional views of two initial semiconductor package structures provided by some embodiments of the present disclosure. FIG. 3 is a cross-sectional view after removing the initial substrate of the initial semiconductor package structure shown in FIG. 2A. FIG. 4 is a cross-sectional view after removing the chip structure of the initial semiconductor package structure shown in FIG. 3 or removing the initial substrate shown in FIG. 2B to obtain a die packaging device. FIG. 5 is a cross-sectional view after flipping the die packaging device shown in FIG. 4 by 180°. FIG. 6A is a cross-sectional view after forming the flipped die packaging device shown in FIG. 5 on one side of a package substrate. FIG. 6B is a cross-sectional view after forming the die packaging device shown in FIG. 4 on one side of a package substrate. FIG. 7A is a cross-sectional view of a semiconductor package structure obtained by forming a first encapsulation layer covering the die packaging device on the substrate shown in FIG. 6A. FIG. 7B is a cross-sectional view of a semiconductor package structure obtained by forming a first encapsulation layer covering the die packaging device on the substrate shown in FIG. 6B. FIG. 8 is a schematic diagram of a module of a storage system provided by the present disclosure. S1, S2, S3, S4: Steps

Claims

1. A semiconductor package structure, comprising: A packaging substrate includes a first side and a second side disposed opposite to each other along a first direction; a wafer stack is located on the first side of the packaging substrate and includes a plurality of wafers stacked along the first direction, the wafers including a first surface and a second surface disposed opposite to each other along the first direction; a connector pad is located on the first surface of the wafers, the first surface being closer to the packaging substrate than the second surface. A first connecting line, the first end of which is connected to the connecting pad; And a second connecting line, the two ends of which are respectively connected to the second end of the first connecting line and the packaging substrate; wherein the first connecting line and the second connecting line are independently formed different connecting lines.

2. The semiconductor packaging structure as described in claim 1, wherein, The wafer stack includes a first adhesive layer located on the second surface and between two adjacent wafers.

3. The semiconductor packaging structure as described in claim 1 further includes: An encapsulation layer is located on the first side of the encapsulation substrate; wherein the wafer stack includes a third side and a fourth side disposed opposite to each other along the first direction, the third side being closer to the encapsulation substrate than the fourth side; a portion of the encapsulation layer is included between the first side and the third side along the first direction.

4. The semiconductor packaging structure as described in claim 3, wherein, The encapsulation layer covers the wafer stack.

5. The semiconductor packaging structure as described in claim 3, further comprising: The second adhesive layer is located between the first side and the third side and is in contact with the encapsulation substrate and the encapsulation layer.

6. The semiconductor package structure as described in claim 3, wherein, The encapsulation layer includes a first encapsulation layer and a second encapsulation layer; the first connecting line is located within the second encapsulation layer, and the second connecting line is located within the first encapsulation layer.

7. The semiconductor package structure as described in claim 6, wherein, The second encapsulation layer covers the wafer stack and is located within the space enclosed by the first encapsulation layer and the encapsulation substrate.

8. The semiconductor packaging structure as described in claim 3, further comprising: The third adhesive layer is located on the fourth side and is in contact with the wafer stack and the encapsulation layer.

9. The semiconductor package structure as described in claim 1, wherein, Along the first direction, the shortest distance from the first connecting line to the packaging substrate is less than the distance between the first end and the packaging substrate.

10. The semiconductor package structure as described in claim 1, wherein, Along the first direction, the maximum distance between the second connecting line and the packaging substrate is located on the side of the wafer stack away from the packaging substrate.

11. The semiconductor package structure as described in claim 1, wherein, The second end is located on the side of the first end away from the packaging substrate.

12. The semiconductor packaging structure as described in claim 1, further comprising: The encapsulation connector is located on the second side of the encapsulation substrate and is in contact with the encapsulation substrate.

13. The semiconductor packaging structure as described in claim 1, further comprising: An interconnect line, the two ends of which are respectively connected to the connection pads located on two adjacent wafers.

14. A method for fabricating a semiconductor package structure, comprising: An initial semiconductor package structure is provided, wherein the initial semiconductor package structure includes a wafer stack, an initial substrate, and a first interconnect, the wafer stack being located on one side of the initial substrate, and a first end of the first interconnect being connected to the wafer stack; the initial substrate is removed, exposing a second end of the first interconnect; a package substrate is provided, on which the wafer stack is formed, the second end being located on a side of the package substrate away from the first end; and a second interconnect is provided, connecting both ends of the second interconnect to the second end of the first interconnect and the package substrate, respectively; wherein the first interconnect and the second interconnect are independently formed different interconnects.

15. A method for fabricating a semiconductor package structure as described in claim 14, wherein, The step of providing a packaging substrate and forming the wafer stack on a first side of the packaging substrate, wherein the second end is located on the side of the first end away from the packaging substrate, includes: inverting the wafer stack such that the second end is located on the side of the first end away from the packaging substrate; and forming the wafer stack on the first side of the packaging substrate.

16. A method for fabricating a semiconductor package structure as described in claim 15, wherein, The wafer stack includes a plurality of wafers and a first adhesive layer located between adjacent wafers; the step of forming the wafer stack on a first side of the packaging substrate includes: forming a second adhesive layer on the first side of the packaging substrate; and forming the wafer stack on the second adhesive layer.

17. The method for fabricating the semiconductor package structure as described in claim 14 further includes: A first encapsulation layer is formed on a first side of the encapsulation substrate, wherein the second connection line is located in the first encapsulation layer.

18. A method for fabricating a semiconductor package structure as described in claim 17, wherein, The initial semiconductor package structure further includes an initial package layer; The step of removing the initial substrate and exposing the second end of the first interconnect includes: removing the initial substrate and a portion of the initial encapsulation layer to form a second encapsulation layer, wherein the first interconnect is located in the second encapsulation layer.

19. A method for fabricating a semiconductor package structure as described in claim 18, wherein, The step of forming a first encapsulation layer on a first side of the encapsulation substrate, wherein the second connecting line is located in the first encapsulation layer, includes: forming the first encapsulation layer around the periphery and on the upper surface of the second encapsulation layer, such that the second connecting line is located in the first encapsulation layer.

20. A method for fabricating a semiconductor package structure as described in claim 14, wherein, The step of removing the initial substrate and exposing the second end of the first connecting line further includes: removing a portion of the first connecting line.

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